1
|
Varghese A, Pandey AH, Sharma P, Yin Y, Medhekar NV, Lodha S. Electrically Controlled High Sensitivity Strain Modulation in MoS 2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates. NANO LETTERS 2024; 24:8472-8480. [PMID: 38950892 DOI: 10.1021/acs.nanolett.4c00357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
Strain can modulate bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional strain-application methodologies relying on flexible/patterned/nanoindented substrates are limited by low thermal tolerance, poor tunability, and/or scalability. Here, we leverage the converse piezoelectric effect to electrically generate and control strain transfer from a piezoelectric thin film to electromechanically coupled 2D MoS2. Electrical bias polarity change across the piezo film tunes the nature of strain transferred to MoS2 from compressive (∼0.23%) to tensile (∼0.14%) as verified through Raman and photoluminescence spectroscopies and substantiated by density functional theory calculations. The device architecture, on silicon substrate, integrates an MoS2 field-effect transistor on a metal-piezoelectric-metal stack enabling strain modulation of transistor drain current (130×), on/off ratio (150×), and mobility (1.19×) with high precision, reversibility, and resolution. Large, tunable tensile (1056) and compressive (-1498) strain gauge factors, electrical strain modulation, and high thermal tolerance promise facile integration with silicon-based CMOS and micro-electromechanical systems.
Collapse
Affiliation(s)
- Abin Varghese
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- IITB-Monash Research Academy, IIT Bombay, Mumbai 400076, India
| | - Adityanarayan H Pandey
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Pooja Sharma
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Yuefeng Yin
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Nikhil V Medhekar
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Saurabh Lodha
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| |
Collapse
|
2
|
Zhang D, Ge C, Wang Y, Xia Y, Zhao H, Yao C, Chen Y, Ma C, Tong Q, Pan A, Wang X. Enhancing Layer-Engineered Interlayer Exciton Emission and Valley Polarization in van der Waals Heterostructures via Strain. ACS NANO 2024; 18:17672-17680. [PMID: 38920321 DOI: 10.1021/acsnano.4c02377] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Layer-engineered interlayer excitons from heterostructures of transition-metal dichalcogenides (TMDCs) exhibit a rich variety of emissive states and intriguing valley spin-selection rules, the effective modulation of which is crucial for excitonic physics and related device applications. Strain or high pressure provides the possibility to tune the energy of the interlayer excitons; however, the reported emission intensity is substantially quenched, which greatly limits their practical application in optoelectronic devices. Here, via applying uniaxial strain based on polyvinyl alcohol (PVA) encapsulation technique, we report enhanced layer-engineered interlayer exciton emission intensity with largely modulated emission energy in WSe2/WS2 heterobilayer and heterotrilayer. Both momentum-direct and momentum-indirect interlayer excitons were observed, and their emission energies show an opposite shift tendency upon applied strain, which agrees with our DFT calculations. We further demonstrate that intralayer and interlayer exciton states with low phonon interactions can be modulated through the mechanical strain applied to the PVA substrate at low temperatures. Due to strain-induced breaking of the 3-fold rotational symmetry, we observe the enhanced valley polarization of interlayer excitons. Our study contributes to the understanding and modulation of the optical properties of interlayer excitons, which could be exploited for optoelectronic device applications.
Collapse
Affiliation(s)
- Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Cuihuang Ge
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Youwen Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Yang Xia
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Haipeng Zhao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Qingjun Tong
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| |
Collapse
|
3
|
Ganski CM, De Palma AC, Yu ET. Enhanced Electromechanical Response Due to Inhomogeneous Strain in Monolayer MoS 2. NANO LETTERS 2024; 24:7903-7910. [PMID: 38899791 DOI: 10.1021/acs.nanolett.4c01126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
2D transition metal dichalcogenides (TMDs) exhibit exceptional resilience to mechanical deformation. Applied strain can have pronounced effects on properties such as the bandgaps and exciton dynamics of TMDs, via deformation potentials and electromechanical coupling. In this work, we use piezoresponse force microscopy to show that the inhomogeneous strain from nanobubbles produces dramatic, localized enhancements of the electromechanical response of monolayer MoS2. Nanobubbles with diameters under 100 nm consistently produce an increased piezoresponse that follows the features' topography, while larger bubbles exhibit a halo-like profile, with maximum piezoresponse near the periphery. We show that spatial filtering enables these effects to be eliminated in the quantitative determination of effective piezoelectric or flexoelectric coefficients. Numerical strain modeling reveals a correlation between the hydrostatic strain gradient and the effective piezoelectric coefficient in large MoS2 nanobubbles, suggesting a localized variation in electromechanical coupling due to symmetry reduction induced by inhomogeneous strain.
Collapse
Affiliation(s)
- Claire M Ganski
- Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Alex C De Palma
- Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Edward T Yu
- Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
- Microelectronics Research Center, Chandra Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| |
Collapse
|
4
|
Kourmoulakis G, Psilodimitrakopoulos S, Maragkakis GM, Mouchliadis L, Michail A, Christodoulides JA, Tripathi M, Dalton AB, Parthenios J, Papagelis K, Stratakis E, Kioseoglou G. Strain distribution in WS 2 monolayers detected through polarization-resolved second harmonic generation. Sci Rep 2024; 14:15159. [PMID: 38956262 PMCID: PMC11219737 DOI: 10.1038/s41598-024-66065-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2023] [Accepted: 06/26/2024] [Indexed: 07/04/2024] Open
Abstract
Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. GRMs exhibit distinct properties under the influence of the substrate that serves as support through uneven compression/ elongation of GRMs surface atoms. Strain in GRM monolayers is the most common feature that alters the interatomic distances and band structure, providing a new degree of freedom that allows regulation of their electronic properties and introducing the field of straintronics. Having an all-optical and minimally invasive detection tool that rapidly probes strain in large areas of GRM monolayers, would be of great importance in the research and development of novel 2D devices. Here, we use Polarization-resolved Second Harmonic Generation (P-SHG) optical imaging to identify strain distribution, induced in a single layer of WS2 placed on a pre-patterned Si/SiO2 substrate with cylindrical wells. By fitting the P-SHG data pixel-by-pixel, we produce spatially resolved images of the crystal armchair direction. In regions where the WS2 monolayer conforms to the pattern topography, a distinct cross-shaped pattern is evident in the armchair image owing to strain. The presence of strain in these regions is independently confirmed using a combination of atomic force microscopy and Raman mapping.
Collapse
Affiliation(s)
- George Kourmoulakis
- Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, 71110, Heraklion, Crete, Greece
- Department of Materials Science and Technology, University of Crete, 70013, Heraklion, Crete, Greece
| | - Sotiris Psilodimitrakopoulos
- Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, 71110, Heraklion, Crete, Greece.
| | - George Miltos Maragkakis
- Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, 71110, Heraklion, Crete, Greece
- Department of Physics, University of Crete, 70013, Heraklion, Crete, Greece
| | - Leonidas Mouchliadis
- Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, 71110, Heraklion, Crete, Greece
| | - Antonios Michail
- Department of Physics, University of Patras, 26504, Patras, Greece
- FORTH/ICE-HT, Stadiou Str Platani, 26504, Patras, Greece
| | | | - Manoj Tripathi
- Department of Physics and Astronomy, University of Sussex, Brighton, BN1 9RH, UK
| | - Alan B Dalton
- Department of Physics and Astronomy, University of Sussex, Brighton, BN1 9RH, UK
| | | | - Konstantinos Papagelis
- FORTH/ICE-HT, Stadiou Str Platani, 26504, Patras, Greece
- Department of Solid-State Physics, School of Physics, Aristotle University of Thessaloniki, 54124, Thessaloniki, Greece
| | - Emmanuel Stratakis
- Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, 71110, Heraklion, Crete, Greece.
- Department of Physics, University of Crete, 70013, Heraklion, Crete, Greece.
| | - George Kioseoglou
- Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, 71110, Heraklion, Crete, Greece.
- Department of Materials Science and Technology, University of Crete, 70013, Heraklion, Crete, Greece.
| |
Collapse
|
5
|
Rodríguez Á, Çakıroğlu O, Li H, Carrascoso F, Mompean F, Garcia-Hernandez M, Munuera C, Castellanos-Gomez A. Improved Strain Transfer Efficiency in Large-Area Two-Dimensional MoS 2 Obtained by Gold-Assisted Exfoliation. J Phys Chem Lett 2024; 15:6355-6362. [PMID: 38857301 PMCID: PMC11194808 DOI: 10.1021/acs.jpclett.4c00855] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Revised: 05/31/2024] [Accepted: 06/05/2024] [Indexed: 06/12/2024]
Abstract
Strain engineering represents a pivotal approach to tailoring the optoelectronic properties of two-dimensional (2D) materials. However, typical bending experiments often encounter challenges, such as layer slippage and inefficient transfer of strain from the substrate to the 2D material, hindering the realization of their full potential. In our study, using molybdenum disulfide (MoS2) as a model 2D material, we have demonstrated that layers obtained through gold-assisted exfoliation on flexible polycarbonate substrates can achieve high-efficient strain transfer while also mitigating slippage effects, owing to the strong interfacial interaction established between MoS2 and gold. We employ differential reflectance and Raman spectroscopy for monitoring strain changes. We successfully applied uniaxial strains of up to 3% to trilayer MoS2, resulting in a notable energy shift of 168 meV. These values are comparable only to those obtained in encapsulated samples with organic polymers.
Collapse
Affiliation(s)
- Álvaro Rodríguez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM)−Consejo
Superior de Investigaciones Científicas (CSIC), C. Sor Juana Inés de la Cruz,
3, 28049 Madrid, Spain
| | - Onur Çakıroğlu
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM)−Consejo
Superior de Investigaciones Científicas (CSIC), C. Sor Juana Inés de la Cruz,
3, 28049 Madrid, Spain
| | - Hao Li
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM)−Consejo
Superior de Investigaciones Científicas (CSIC), C. Sor Juana Inés de la Cruz,
3, 28049 Madrid, Spain
| | - Felix Carrascoso
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM)−Consejo
Superior de Investigaciones Científicas (CSIC), C. Sor Juana Inés de la Cruz,
3, 28049 Madrid, Spain
| | - Federico Mompean
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM)−Consejo
Superior de Investigaciones Científicas (CSIC), C. Sor Juana Inés de la Cruz,
3, 28049 Madrid, Spain
| | - Mar Garcia-Hernandez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM)−Consejo
Superior de Investigaciones Científicas (CSIC), C. Sor Juana Inés de la Cruz,
3, 28049 Madrid, Spain
| | - Carmen Munuera
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM)−Consejo
Superior de Investigaciones Científicas (CSIC), C. Sor Juana Inés de la Cruz,
3, 28049 Madrid, Spain
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM)−Consejo
Superior de Investigaciones Científicas (CSIC), C. Sor Juana Inés de la Cruz,
3, 28049 Madrid, Spain
| |
Collapse
|
6
|
Sun Y, Ellis A, Diaz S, Li W, Miao M. Constructing Tunable Electrides on Monolayer Transition Metal Dichalcogenides. J Phys Chem Lett 2024; 15:6174-6182. [PMID: 38836596 DOI: 10.1021/acs.jpclett.4c01263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
Electrides have emerged as promising materials with exotic properties due to the presence of localized electrons detached from all atoms. Despite the continuous discovery of many new electrides, most of them are based on atypical compositions, and their applications require an inert surface structure to passivate reactive excess electrons. Here, we demonstrate a different route to attain tunable electrides. We first report that monolayer transition metal dichalcogenides (TMDCs) exhibit weak electride characteristics, which is the remainder of the electride feature of the transition metal sublattice. By introducing chalcogen vacancies, the enhanced electride characteristics are comparable to those of known electrides. Since the precise tailoring of the chalcogen vacancy concentration has been achieved experimentally, we proposed that TMDCs can be used to build electrides with controllable intensities. Furthermore, we demonstrate that the electride states at the chalcogen vacancy of monolayer TMDCs will play an important role in catalyzing hydrogen evolution reactions.
Collapse
Affiliation(s)
- Yuanhui Sun
- Suzhou Laboratory, Suzhou, Jiangsu 215123, P. R. China
- Department of Chemistry and Biochemistry, California State University Northridge, Northridge, California 91330, United States
| | - Austin Ellis
- Department of Chemistry and Biochemistry, California State University Northridge, Northridge, California 91330, United States
| | - Saul Diaz
- Department of Chemistry and Biochemistry, California State University Northridge, Northridge, California 91330, United States
| | - Wei Li
- Suzhou Laboratory, Suzhou, Jiangsu 215123, P. R. China
- Gusu Laboratory of Materials, Suzhou, Jiangsu 215123, P. R. China
| | - Maosheng Miao
- Department of Chemistry and Biochemistry, California State University Northridge, Northridge, California 91330, United States
| |
Collapse
|
7
|
Su W, Kuklin A, Jin LH, Engelgardt D, Zhang H, Ågren H, Zhang Y. Liquid Phase Exfoliation of Few-Layer Non-Van der Waals Chromium Sulfide. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2402875. [PMID: 38828875 DOI: 10.1002/advs.202402875] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Revised: 05/21/2024] [Indexed: 06/05/2024]
Abstract
Exfoliation of 2D non-Van der Waals (non-vdW) semiconductor nanoplates (NPs) from inorganic analogs presents many challenges ahead for further exploring of their advanced applications on account of the strong bonding energies. In this study, the exfoliation of ultrathin 2D non-vdW chromium sulfide (2D Cr2S3) by means of a combined facile liquid-phase exfoliation (LPE) method is successfully demonstrated. The morphology and structure of the 2D Cr2S3 material are systematically examined. Magnetic studies show an obvious temperature-dependent uncompensated antiferromagnetic behavior of 2D Cr2S3. The material is further loaded on TiO2 nanorod arrays to form an S-scheme heterojunction. Experimental measurements and density functional theory (DFT) calculations confirm that the formed TiO2@Cr2S3 S-scheme heterojunction facilitates the separation and transmission of photo-induced electron/hole pairs, resulting in a significantly enhanced photocatalytic activity in the visible region.
Collapse
Affiliation(s)
- Wenjie Su
- School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
| | - Artem Kuklin
- Department of Physics and Astronomy Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Ling Hua Jin
- School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
| | - Dana Engelgardt
- Department of Chemistry, College of Natural Sciences, Kyungpook National University, 80 Daehakro, Bukgu, Daegu, 41556, South Korea
- International Research Center of Spectroscopy and Quantum Chemistry - IRC SQC, Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russia
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| | - Hans Ågren
- Department of Physics and Astronomy Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Ye Zhang
- School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
| |
Collapse
|
8
|
Zaitsev-Zotov SV. Compact computer controlled biaxial tensile device for low-temperature transport measurements of layered materials. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2024; 95:063905. [PMID: 38912912 DOI: 10.1063/5.0187818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Accepted: 06/03/2024] [Indexed: 06/25/2024]
Abstract
A biaxial tensile device for the transport study of layered materials is described. The device is mounted on the standard 24 pin zero force connector and can be moved between various setups. The compact design of the device makes it suitable for a wide range of studies. In our case, it is placed inside a 50 mm diameter chamber in the cryocooler and is used in the temperature range 9-310 K. A sample is glued in the center of a polyimide cruciform substrate, the ends of which are connected to a tension system driven by four computer-controlled stepper motors providing tensile force up to 30 N. Computer simulation results and their experimental verification show that tensile strain along one axis depends on the tensile load along the perpendicular direction, and this dependence turns out to be relatively strong and exceeds 40%. The operation of the device is demonstrated by studying the effect of deformation on the electrical conductivity of the layered compound 2H-NbS2.
Collapse
Affiliation(s)
- S V Zaitsev-Zotov
- Kotelnikov Institute of Radioengineering and Electronics of RAS, Mokhovaya 11, bld. 7, Moscow 125009, Russia and Physics Department, HSE University, 20 Myasnitskaya Ulitsa, Moscow 101000, Russia
| |
Collapse
|
9
|
Yu X, Peng Z, Xu L, Shi W, Li Z, Meng X, He X, Wang Z, Duan S, Tong L, Huang X, Miao X, Hu W, Ye L. Manipulating 2D Materials through Strain Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402561. [PMID: 38818684 DOI: 10.1002/smll.202402561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2024] [Revised: 05/15/2024] [Indexed: 06/01/2024]
Abstract
This review explores the growing interest in 2D layered materials, such as graphene, h-BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.
Collapse
Affiliation(s)
- Xiangxiang Yu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- School of Physic and Optoelectronic Engineering, Yangtze University, Jingzhou, Hubei, 434023, China
| | - Zhuiri Peng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Langlang Xu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Wenhao Shi
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zheng Li
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiaohan Meng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiao He
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Shikun Duan
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Tong
- Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, 999077, China
| | - Xinyu Huang
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Ye
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| |
Collapse
|
10
|
Tang Y, Wang Y, Cheng X, Zhang H. Strain and Electric Field Engineering of G-ZnO/SnXY (X, Y = S, Se) S-Scheme Heterostructures for Photocatalyst and Electronic Device Applications: A Hybrid DFT Calculation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27381-27393. [PMID: 38752270 DOI: 10.1021/acsami.4c03666] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Using hybrid density functional theory calculations, we systematically study the biaxial strain and electric field modulated electronic properties of g-ZnO/SnS2, g-ZnO/SnSe2, and g-ZnO/SnSSe S-scheme van der Waals heterostructures (vdWHs). g-ZnO/SnS2 and g-ZnO/SnSSe are found to be promising photocatalysts for water splitting with high solar-to-hydrogen efficiencies, even under acidic, alkaline, and high-stress conditions. The strain effect on the bandgaps of g-ZnO/SnXY is explained in detail according to the correlation between geometry structure and orbital hybridization of SnXY, which could help understand the strain-induced band structure evolutions in other SnXY (X, Y = S, Se)-based vdWHs. It is surprising that under an external electric field, g-ZnO/SnS2, g-ZnO/SnSe2, and g-ZnO/SnSSe can offer the occupied nearly free-electron (NFE) states. In many materials, NFE states are usually unoccupied and is not conducive to the charge transport. The NFE state in g-ZnO/SnSe2 is the most sensitive to the electric field and might be promising electron transport channel in nanoelectronic devices. g-ZnO/SnSe2 might also have application potential in gas sensors and high-temperature superconductors.
Collapse
Affiliation(s)
- Yue Tang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - YiPeng Wang
- College of Applied Technology, Shenzhen University, Shenzhen 518061, China
| | - Xinlu Cheng
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - Hong Zhang
- College of Physics, Sichuan University, Chengdu 610064, China
| |
Collapse
|
11
|
Li J, Hou Y, He Z, Wu H, Zhu Y. Strain Engineering of Ion-Coordinated Nanochannels in Nanocellulose. NANO LETTERS 2024; 24:6262-6268. [PMID: 38743501 DOI: 10.1021/acs.nanolett.4c00867] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
Expanding the interlayer spacing plays a significant role in improving the conductivity of a cellulose-based conductor. However, it remains a challenge to regulate the cellulose nanochannel expanded by ion coordination. Herein, starting from multiscale mechanics, we proposed a strain engineering method to regulate the interlayer spacing of the cellulose nanochannels. First-principles calculations were conducted to select the most suitable ions for coordination. Large-scale molecular dynamics simulations were performed to reveal the mechanism of interlayer spacing expansion by the ion cross-linking. Combining the shear-lag model, we established the relationship between interfacial cross-link density and interlayer spacing of an ion-coordinated cellulose nanochannel. Consequently, fast ion transport and current regulation were realized via the strain engineering of nanochannels, which provides a promising strategy for the current regulation of a cellulose-based conductor.
Collapse
Affiliation(s)
- JiaHao Li
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, People's Republic of China
| | - YuanZhen Hou
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, People's Republic of China
| | - ZeZhou He
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, People's Republic of China
| | - HengAn Wu
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, People's Republic of China
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Science, 15 Beisihuan West Road, Beijing 100190, People's Republic of China
| | - YinBo Zhu
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, People's Republic of China
| |
Collapse
|
12
|
Hou Y, Zhou J, He Z, Chen J, Zhu M, Wu H, Lu Y. Tuning instability in suspended monolayer 2D materials. Nat Commun 2024; 15:4033. [PMID: 38740743 DOI: 10.1038/s41467-024-48345-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 04/23/2024] [Indexed: 05/16/2024] Open
Abstract
Monolayer two-dimensional (2D) materials possess excellent in-plane mechanical strength yet extremely low bending stiffness, making them particularly susceptible to instability, which is anticipated to have a substantial impact on their physical functionalities such as 2D-based Micro/Nanoelectromechanical systems (M/NEMS), nanochannels, and proton transport membrane. In this work, we achieve quantitatively tuning instability in suspended 2D materials including monolayer graphene and MoS2 by employing a push-to-shear strategy. We comprehensively examine the dynamic wrinkling-splitting-smoothing process and find that monolayer 2D materials experience stepwise instabilities along with different recovery processes. These stepwise instabilities are governed by the materials' geometry, pretension, and the elastic nonlinearity. We attribute the different instability and recovery paths to the local stress redistribution in monolayer 2D materials. The tunable instability behavior of suspended monolayer 2D materials not only allows measuring their bending stiffness but also opens up new opportunities for programming the nanoscale instability pattern and even physical properties of atomically thin films.
Collapse
Affiliation(s)
- Yuan Hou
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, 999077, Hong Kong SAR, China
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR, China
| | - Zezhou He
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, 230027, China
| | - Juzheng Chen
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR, China
| | - Mengya Zhu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR, China
| | - HengAn Wu
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, 230027, China
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, 999077, Hong Kong SAR, China.
| |
Collapse
|
13
|
Guo L, Hu S, Gu X, Zhang R, Wang K, Yan W, Sun X. Emerging Spintronic Materials and Functionalities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301854. [PMID: 37309258 DOI: 10.1002/adma.202301854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 06/01/2023] [Indexed: 06/14/2023]
Abstract
The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.
Collapse
Affiliation(s)
- Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Shunhua Hu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xianrong Gu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Rui Zhang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Kai Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Wenjing Yan
- School of Physics and Astronomy, University of Nottingham, University Park, Nottingham, NG9 2RD, UK
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Material Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| |
Collapse
|
14
|
Wang H, Liu S, Liu Z, Sun Y, Xie D, Ren T. Probing the Strain Direction-Dependent Nonmonotonic Optical Bandgap Modulation of Layered Violet Phosphorus. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305770. [PMID: 38108598 DOI: 10.1002/adma.202305770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 12/08/2023] [Indexed: 12/19/2023]
Abstract
Recent theoretical investigations have well-predicted strain-induced nonmonotonic optical band gap variations in low-dimensional materials. However, few two-dimensional (2D) materials are experimentally confirmed to exhibit nonmonotonic optical band gap variation under varying strain. Here, a strain-induced nonmonotonic optical bandgap variation in violet phosphorus (VP) nanosheets is observed, as evidenced by photoluminescence spectroscopy, which is reported in a few other 2D materials in knowledge. The optical bandgap variations are characterized to show the modulation rates of 41 and -24 meV/% with compression and tensile strains, respectively. Remarkably, first-principle calculations predict and clarify the nonmonotonic modulation accurately, highlighting its relationship with the strain direction-dependent asymmetric distribution of conduction band minimum wavefunctions, demonstrating that this unique nonmonotonic optical bandgap modulation is determined by the distinctive crystal structure of VP. This work provides a deep insight into the design of 2D materials toward optoelectronic and photoelectrochemical applications via strain engineering.
Collapse
Affiliation(s)
- Huaipeng Wang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Sicheng Liu
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zhifang Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yilin Sun
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Dan Xie
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tianling Ren
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| |
Collapse
|
15
|
Hou Y, Zhou J, Xue M, Yu M, Han Y, Zhang Z, Lu Y. Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311185. [PMID: 38616775 DOI: 10.1002/smll.202311185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Revised: 03/24/2024] [Indexed: 04/16/2024]
Abstract
The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".
Collapse
Affiliation(s)
- Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Minmin Xue
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Maolin Yu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Ying Han
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, Hong Kong SAR, 999077, China
| |
Collapse
|
16
|
Seiler AM, Jacobsen N, Statz M, Fernandez N, Falorsi F, Watanabe K, Taniguchi T, Dong Z, Levitov LS, Weitz RT. Probing the tunable multi-cone band structure in Bernal bilayer graphene. Nat Commun 2024; 15:3133. [PMID: 38605052 PMCID: PMC11009389 DOI: 10.1038/s41467-024-47342-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Accepted: 03/27/2024] [Indexed: 04/13/2024] Open
Abstract
Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the band structure, featuring two distinct regimes. One is a tunable band gap induced by large displacement fields. Another is a gapless metallic band occurring at low fields, featuring rich fine structure consisting of four linearly dispersing Dirac cones and van Hove singularities. Even though BLG has been extensively studied experimentally, the evidence of this band structure is still elusive, likely due to insufficient energy resolution. Here, we use Landau levels as markers of the energy dispersion and analyze the Landau level spectrum in a regime where the cyclotron orbits of electrons or holes in momentum space are small enough to resolve the distinct mini Dirac cones. We identify the presence of four Dirac cones and map out topological transitions induced by displacement field. By clarifying the low-energy properties of BLG bands, these findings provide a valuable addition to the toolkit for graphene electronics.
Collapse
Affiliation(s)
- Anna M Seiler
- 1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen, Germany
| | - Nils Jacobsen
- 1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen, Germany
| | - Martin Statz
- 1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen, Germany
| | - Noelia Fernandez
- 1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen, Germany
| | - Francesca Falorsi
- 1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen, Germany
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan
| | - Zhiyu Dong
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA
| | - Leonid S Levitov
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA
| | - R Thomas Weitz
- 1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen, Germany.
- International Center for Advanced Studies of Energy Conversion (ICASEC), University of Göttingen, Göttingen, Germany.
| |
Collapse
|
17
|
Jo K, Stevens CE, Choi B, El-Khoury PZ, Hendrickson JR, Jariwala D. Core/Shell-Like Localized Emission at Atomically Thin Semiconductor-Au Interface. NANO LETTERS 2024. [PMID: 38593418 DOI: 10.1021/acs.nanolett.3c03790] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Localized emission in atomically thin semiconductors has sparked significant interest as single-photon sources. Despite comprehensive studies into the correlation between localized strain and exciton emission, the impacts of charge transfer on nanobubble emission remains elusive. Here, we report the observation of core/shell-like localized emission from monolayer WSe2 nanobubbles at room temperature through near-field studies. By altering the electronic junction between monolayer WSe2 and the Au substrate, one can effectively adjust the semiconductor to metal junction from a Schottky to an Ohmic junction. Through concurrent analysis of topography, potential, tip-enhanced photoluminescence, and a piezo response force microscope, we attribute the core/shell-like emissions to strong piezoelectric potential aided by induced polarity at the WSe2-Au Schottky interface which results in spatial confinement of the excitons. Our findings present a new approach for manipulating charge confinement and engineering localized emission within atomically thin semiconductor nanobubbles. These insights hold implications for advancing the nano and quantum photonics with low-dimensional semiconductors.
Collapse
Affiliation(s)
- Kiyoung Jo
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
| | - Christopher E Stevens
- KBR Inc., Beavercreek, Ohio 45431, United States
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB Ohio 45433, United States
| | - Bongjun Choi
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Patrick Z El-Khoury
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB Ohio 45433, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| |
Collapse
|
18
|
Sun C, Zhong J, Gan Z, Chen L, Liang C, Feng H, Sun Z, Jiang Z, Li WD. Nanoimprint-induced strain engineering of two-dimensional materials. MICROSYSTEMS & NANOENGINEERING 2024; 10:49. [PMID: 38595945 PMCID: PMC11001999 DOI: 10.1038/s41378-024-00669-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Revised: 12/27/2023] [Accepted: 01/18/2024] [Indexed: 04/11/2024]
Abstract
The high stretchability of two-dimensional (2D) materials has facilitated the possibility of using external strain to manipulate their properties. Hence, strain engineering has emerged as a promising technique for tailoring the performance of 2D materials by controlling the applied elastic strain field. Although various types of strain engineering methods have been proposed, deterministic and controllable generation of the strain in 2D materials remains a challenging task. Here, we report a nanoimprint-induced strain engineering (NISE) strategy for introducing controllable periodic strain profiles on 2D materials. A three-dimensional (3D) tunable strain is generated in a molybdenum disulfide (MoS2) sheet by pressing and conforming to the topography of an imprint mold. Different strain profiles generated in MoS2 are demonstrated and verified by Raman and photoluminescence (PL) spectroscopy. The strain modulation capability of NISE is investigated by changing the imprint pressure and the patterns of the imprint molds, which enables precise control of the strain magnitudes and distributions in MoS2. Furthermore, a finite element model is developed to simulate the NISE process and reveal the straining behavior of MoS2. This deterministic and effective strain engineering technique can be easily extended to other materials and is also compatible with common semiconductor fabrication processes; therefore, it provides prospects for advances in broad nanoelectronic and optoelectronic devices.
Collapse
Affiliation(s)
- Chuying Sun
- The University of Hong Kong, Hong Kong, China
| | | | - Zhuofei Gan
- The University of Hong Kong, Hong Kong, China
| | - Liyang Chen
- The University of Hong Kong, Hong Kong, China
| | | | | | - Zhao Sun
- The University of Hong Kong, Hong Kong, China
| | - Zijie Jiang
- The University of Hong Kong, Hong Kong, China
| | - Wen-Di Li
- The University of Hong Kong, Hong Kong, China
| |
Collapse
|
19
|
Karmakar S, Datta S, Saha-Dasgupta T. First principles predictions of structural, electronic and topological properties of two-dimensional Janus Ti 2N 2XI (X = Br, Cl) structures. Phys Chem Chem Phys 2024; 26:10557-10567. [PMID: 38530661 DOI: 10.1039/d4cp00176a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Motivated by the report of the giant Rashba effect in ternary layered compounds BiTeX, we consider two Janus structured compounds Ti2N2XI (X = Br, Cl) of the same ternary family exhibiting a 1 : 1 : 1 stoichiometric ratio. Broken inversion symmetry in the Janus structure, together with its unique electronic structure exhibiting anti-crossing states formed between Ti-d states and strong spin-orbit coupled I-p states, generates large Rashba cofficients of 2-3 eV Å for these compounds, classifying them as strong Rashba compounds. The anti-crossing features of the first-principles calculated electronic structure also result in non-trivial topology, combining two quantum phenomena - Rashba effect and non-trivial topology - in the same materials. This makes Janus TiNI compounds candidate materials for two-dimensional composite quantum materials. The situation becomes further promising by the fact that the properties are found to exhibit extreme sensitivity and tunability upon application of uniaxial strain.
Collapse
Affiliation(s)
- Shiladitya Karmakar
- S.N. Bose National Centre for Basic Sciences. JD Block, Sector III, Salt Lake, Kolkata 700106, India.
| | - Soumendu Datta
- S.N. Bose National Centre for Basic Sciences. JD Block, Sector III, Salt Lake, Kolkata 700106, India.
| | - Tanusri Saha-Dasgupta
- S.N. Bose National Centre for Basic Sciences. JD Block, Sector III, Salt Lake, Kolkata 700106, India.
| |
Collapse
|
20
|
Zhang Y, Gao B, Lepage D, Tong Y, Wang P, Xia W, Niu J, Feng Y, Chen H, Qian H. Large second-order susceptibility from a quantized indium tin oxide monolayer. NATURE NANOTECHNOLOGY 2024; 19:463-470. [PMID: 38168927 DOI: 10.1038/s41565-023-01574-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Accepted: 11/13/2023] [Indexed: 01/05/2024]
Abstract
Due to their high optical transparency and electrical conductivity, indium tin oxide thin films are a promising material for photonic circuit design and applications. However, their weak optical nonlinearity has been a substantial barrier to nonlinear signal processing applications. In this study, we show that an atomically thin (~1.5 nm) indium tin oxide film in the form of an air/indium tin oxide/SiO2 quantum well exhibits a second-order susceptibility χ2 of ~1,800 pm V-1. First-principles calculations and quantum electrostatic modelling point to an electronic interband transition resonance in the asymmetric potential energy of the quantum well as the reason for this large χ2 value. As the χ2 value is more than 20 times higher than that of the traditional nonlinear LiNbO3 crystal, our indium tin oxide quantum well design can be an important step towards nonlinear photonic circuit applications.
Collapse
Affiliation(s)
- Yiyun Zhang
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China
- International Joint Innovation Center, Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang, Electromagnetics Academy at Zhejiang University, Zhejiang University, Haining, China
- Jinhua Institute of Zhejiang University, Zhejiang University, Jinhua, China
| | - Bingtao Gao
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China
- International Joint Innovation Center, Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang, Electromagnetics Academy at Zhejiang University, Zhejiang University, Haining, China
- Jinhua Institute of Zhejiang University, Zhejiang University, Jinhua, China
| | - Dominic Lepage
- Institut Quantique, Université de Sherbrooke, Sherbrooke, Quebec, Canada
| | - Yuanbiao Tong
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China
| | - Pan Wang
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China
| | - Wendi Xia
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China
- International Joint Innovation Center, Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang, Electromagnetics Academy at Zhejiang University, Zhejiang University, Haining, China
- Jinhua Institute of Zhejiang University, Zhejiang University, Jinhua, China
| | - Junru Niu
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China
- International Joint Innovation Center, Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang, Electromagnetics Academy at Zhejiang University, Zhejiang University, Haining, China
- Jinhua Institute of Zhejiang University, Zhejiang University, Jinhua, China
| | - Yiming Feng
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China
- International Joint Innovation Center, Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang, Electromagnetics Academy at Zhejiang University, Zhejiang University, Haining, China
- Jinhua Institute of Zhejiang University, Zhejiang University, Jinhua, China
| | - Hongsheng Chen
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China.
- International Joint Innovation Center, Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang, Electromagnetics Academy at Zhejiang University, Zhejiang University, Haining, China.
- Jinhua Institute of Zhejiang University, Zhejiang University, Jinhua, China.
| | - Haoliang Qian
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China.
- International Joint Innovation Center, Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang, Electromagnetics Academy at Zhejiang University, Zhejiang University, Haining, China.
- Jinhua Institute of Zhejiang University, Zhejiang University, Jinhua, China.
| |
Collapse
|
21
|
Celis J, Cao W. Systematic DFT Modeling van der Waals Heterostructures from a Complete Configurational Basis Applied to γ-PC/WS 2. J Chem Theory Comput 2024; 20:2377-2389. [PMID: 38446034 DOI: 10.1021/acs.jctc.3c00932] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Periodic boundary conditions in density functional theory (DFT)-based modeling of bilayer van der Waals heterostructures introduce an artificial lock to a metastable configuration. Depending on the initial supercell, geometric optimization may reach local energy minima at a fixed twist-angle in a restricted strain-space. In this work, an algorithm was introduced for generating a complete scope of ways to combine two monolayer unit cells into a common supercell. In its application to γ-PC/WS2, 18,123 bilayer supercells were derived, for which the constituting monolayers possessed isotropic strains, anisotropic strains, or intralayer shear strains. Based on analysis, 45 isotropically strained configurations were carefully chosen for optimization by DFT. Geometric and energetic features and band structures were revealed and compared, following the variations at different strains and twist-angles. As such, this case study brought to resolution the impacts of supercell construction on DFT's outcomes and the merits of in-depth screening of the different options. Repetitions and extensions to the demonstrated approach may be applied to characterize van der Waals heterostructures and derivatives in the future.
Collapse
Affiliation(s)
- Joran Celis
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, FIN-90014 Oulu, Finland
| | - Wei Cao
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, FIN-90014 Oulu, Finland
| |
Collapse
|
22
|
Santos EAJ, Lima KAL, Ribeiro Junior LA. Proposing TODD-graphene as a novel porous 2D carbon allotrope designed for superior lithium-ion battery efficiency. Sci Rep 2024; 14:6202. [PMID: 38485984 PMCID: PMC10940596 DOI: 10.1038/s41598-024-56312-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 03/05/2024] [Indexed: 03/18/2024] Open
Abstract
The category of 2D carbon allotropes has gained considerable interest due to its outstanding optoelectronic and mechanical characteristics, which are crucial for various device applications, including energy storage. This study uses density functional theory calculations, ab initio molecular dynamics (AIMD), and classical reactive molecular dynamics (MD) simulations to introduce TODD-Graphene, an innovative 2D planar carbon allotrope with a distinctive porous arrangement comprising 3-8-10-12 carbon rings. TODD-G exhibits intrinsic metallic properties with a low formation energy and stability in thermal and mechanical behavior. Calculations indicate a substantial theoretical capacity for adsorbing Li atoms, revealing a low average diffusion barrier of 0.83 eV. The metallic framework boasts excellent conductivity and positioning TODD-G as an active layer for superior lithium-ion battery efficiency. Charge carrier mobility calculations for electrons and holes in TODD-G surpass those of graphene. Classical reactive MD simulation results affirm its structural integrity, maintaining stability without bond reconstructions at 2200 K.
Collapse
Affiliation(s)
- E A J Santos
- Institute of Physics, University of Brasília, Brasília, 70910-900, Brazil
- Computational Materials Laboratory, LCCMat, Institute of Physics, University of Brasília, Brasília, 70910-900, Brazil
| | - K A L Lima
- Institute of Physics, University of Brasília, Brasília, 70910-900, Brazil
- Computational Materials Laboratory, LCCMat, Institute of Physics, University of Brasília, Brasília, 70910-900, Brazil
| | - L A Ribeiro Junior
- Institute of Physics, University of Brasília, Brasília, 70910-900, Brazil.
- Computational Materials Laboratory, LCCMat, Institute of Physics, University of Brasília, Brasília, 70910-900, Brazil.
| |
Collapse
|
23
|
Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
Collapse
Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
| |
Collapse
|
24
|
Belyaeva L, Ludwig C, Lai YC, Chou CC, Shih CJ. Uniform, Strain-Free, Large-Scale Graphene and h-BN Monolayers Enabled by Hydrogel Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307054. [PMID: 37867241 DOI: 10.1002/smll.202307054] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Revised: 10/05/2023] [Indexed: 10/24/2023]
Abstract
Translation of the unique properties of 2D monolayers from non-scalable micron-sized samples to macroscopic scale is a longstanding challenge obstructed by the substrate-induced strains, interface nonuniformities, and sample-to-sample variations inherent to the scalable fabrication methods. So far, the most successful strategies to reduce strain in graphene are the reduction of the interface roughness and lattice mismatch by using hexagonal boron nitride (h-BN), with the drawback of limited uniformity and applicability to other 2D monolayers, and liquid water, which is not compatible with electronic devices. This work demonstrates a new class of substrates based on hydrogels that overcome these limitations and excel h-BN and water substrates at strain relaxation enabling superiorly uniform and reproducible centimeter-sized sheets of unstrained monolayers. The ultimate strain relaxation and uniformity are rationalized by the extreme structural adaptability of the hydrogel surface owing to its high liquid content and low Young's modulus, and are universal to all 2D materials irrespective of their crystalline structure. Such platforms can be integrated into field effect transistors and demonstrate enhanced charge carrier mobilities in graphene. These results present a universal strategy for attaining uniform and strain-free sheets of 2D materials and underline the opportunities enabled by interfacing them with soft matter.
Collapse
Affiliation(s)
- Liubov Belyaeva
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, CH-8093, Switzerland
| | - Cyril Ludwig
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, CH-8093, Switzerland
| | - Yu-Cheng Lai
- Institute of Applied Mechanics, College of Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan
| | - Chia-Ching Chou
- Institute of Applied Mechanics, College of Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan
| | - Chih-Jen Shih
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, CH-8093, Switzerland
| |
Collapse
|
25
|
Paliwal U, Tanwar P, Joshi KB. Structural, electronic and thermoelectric properties of monolayer TiSe 2. J Mol Model 2024; 30:80. [PMID: 38386089 DOI: 10.1007/s00894-024-05865-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2024] [Accepted: 02/03/2024] [Indexed: 02/23/2024]
Abstract
CONTEXT AND RESULTS In this work the first-principles calculations of the structural, electronic and thermoelectric properties of monolayer TiSe2 are presented. The optimized lattice parameter of monolayer TiSe2 shows excellent agreement with the experimental value. The computed band structure and density of states calculations predict metallic nature of monolayer TiSe2 with overlapping of 0.44 eV between the lowest conduction band and top valance band at high symmetry point M. The position of pseudogap formed by Ti-3d orbitals near the Fermi level confirms the mechanical stability of monolayer TiSe2. Due to the influence of positive strain (tensile strain), the Ti-Se bond length increases and the layer height decreases. The applied tensile strain changes the metallic nature of TiSe2 into a semiconductor with opening of bandgap. It has also been observed that the positions of conduction band minima and valance band maxima change with strain. The charge analysis shows that charge transfer from Ti to Se atom increases when tensile strain is applied, while an opposite trend is observed with compression. The computed thermoelectric coefficients i.e. Seeback coefficient, power factor and figure of merit are in good agreement with the experimental data. The temperature dependence of these coefficients is also reported. COMPUTATIONAL METHOD The density functional theory based calculations are reported employing the PBE-GGA ansatz using the plane wave-pseudopotential method embodied in the Quantum ESPRESSO package. The self-consistent field calculations are performed over a dense Monkhorst-Pack net of 12 × 12 × 1 k-points. The energy convergence criteria for the self-consistent field calculation were set to 10-6 Ry/atom with a cutoff energy of 90 Ry. The thermoelectric properties are computed by combining the band structure calculations with the Boltzmann transport equation using Boltztrap2 peckage.
Collapse
Affiliation(s)
- Uttam Paliwal
- Department of Physics, Jai Narain Vyas University, Jodhpur, 342011, India.
| | - Pradeep Tanwar
- Department of Physics, Jai Narain Vyas University, Jodhpur, 342011, India
| | - K B Joshi
- Department of Physics, ML Sukhadia University, Udaipur, 313001, India
| |
Collapse
|
26
|
Ahmed S, Gan Y, Saleque AM, Wu H, Qiao J, Ivan MNAS, Hani SU, Alam TI, Wen Q, Tsang YH. 2D Semi-Metallic Hafnium Ditelluride: A Novel Nonlinear Optical Material for Ultrafast and Ultranarrow Photonics Applications. SMALL METHODS 2024; 8:e2300239. [PMID: 37356086 DOI: 10.1002/smtd.202300239] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Revised: 05/23/2023] [Indexed: 06/27/2023]
Abstract
2D semi-metallic hafnium ditelluride material is used in several applications such as solar steam generation, gas sensing, and catalysis owing to its strong near-infrared absorbance, high sensitivity, and distinctive electronic structure. The zero-bandgap characteristics, along with the thermal and dynamic stability of 2D-HfTe2, make it a desirable choice for developing long-wavelength-range photonics devices. Herein, the HfTe2 -nanosheets are prepared using the liquid-phase exfoliation method, and their superior nonlinear optical properties are demonstrated by the obtained modulation depth of 11.9% (800 nm) and 6.35% (1560 nm), respectively. In addition, the observed transition from saturable to reverse saturable absorption indicates adaptability of the prepared material in nonlinear optics. By utilizing a side polished fiber-based HfTe2 -saturable absorber (SA) inside an Er-doped fiber laser cavity, a mode-locked laser with 724 fs pulse width and 56.63 dB signal-to-noise ratio (SNR) is realized for the first time. The generated laser with this SA has the second lowest mode-locking pump threshold (18.35 mW), among the other 2D material based-SAs, thus paving the way for future laser development with improved efficiency and reduced thermal impact. Finally, employing this HfTe2 -SA, a highly stable single-frequency fiber laser (SNR ≈ 74.56 dB; linewidth ≈ 1.268 kHz) is generated for the first time, indicating its promising ultranarrow photonic application.
Collapse
Affiliation(s)
- Safayet Ahmed
- Department of Applied Physics, Materials Research Center, Photonics Research Institute, and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, 518057, China
| | - Yiyu Gan
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Ahmed Mortuza Saleque
- Department of Applied Physics, Materials Research Center, Photonics Research Institute, and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, 518057, China
| | - Honglei Wu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Junpeng Qiao
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, 273165, China
| | - Md Nahian Al Subri Ivan
- Department of Applied Physics, Materials Research Center, Photonics Research Institute, and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, 518057, China
| | - Sumaiya Umme Hani
- Department of Applied Physics, Materials Research Center, Photonics Research Institute, and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, 518057, China
| | - Tawsif Ibne Alam
- Department of Applied Physics, Materials Research Center, Photonics Research Institute, and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, 518057, China
| | - Qiao Wen
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yuen Hong Tsang
- Department of Applied Physics, Materials Research Center, Photonics Research Institute, and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, 518057, China
| |
Collapse
|
27
|
Koo Y, Moon T, Kang M, Joo H, Lee C, Lee H, Kravtsov V, Park KD. Dynamical control of nanoscale light-matter interactions in low-dimensional quantum materials. LIGHT, SCIENCE & APPLICATIONS 2024; 13:30. [PMID: 38272869 PMCID: PMC10810844 DOI: 10.1038/s41377-024-01380-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 11/26/2023] [Accepted: 01/10/2024] [Indexed: 01/27/2024]
Abstract
Tip-enhanced nano-spectroscopy and -imaging have significantly advanced our understanding of low-dimensional quantum materials and their interactions with light, providing a rich insight into the underlying physics at their natural length scale. Recently, various functionalities of the plasmonic tip expand the capabilities of the nanoscopy, enabling dynamic manipulation of light-matter interactions at the nanoscale. In this review, we focus on a new paradigm of the nanoscopy, shifting from the conventional role of imaging and spectroscopy to the dynamical control approach of the tip-induced light-matter interactions. We present three different approaches of tip-induced control of light-matter interactions, such as cavity-gap control, pressure control, and near-field polarization control. Specifically, we discuss the nanoscale modifications of radiative emissions for various emitters from weak to strong coupling regime, achieved by the precise engineering of the cavity-gap. Furthermore, we introduce recent works on light-matter interactions controlled by tip-pressure and near-field polarization, especially tunability of the bandgap, crystal structure, photoluminescence quantum yield, exciton density, and energy transfer in a wide range of quantum materials. We envision that this comprehensive review not only contributes to a deeper understanding of the physics of nanoscale light-matter interactions but also offers a valuable resource to nanophotonics, plasmonics, and materials science for future technological advancements.
Collapse
Affiliation(s)
- Yeonjeong Koo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Taeyoung Moon
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Mingu Kang
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Huitae Joo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Changjoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Hyeongwoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Vasily Kravtsov
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
| | - Kyoung-Duck Park
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
| |
Collapse
|
28
|
Dai B, Su Y, Guo Y, Wu C, Xie Y. Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets. Chem Rev 2024; 124:420-454. [PMID: 38146851 DOI: 10.1021/acs.chemrev.3c00422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.
Collapse
Affiliation(s)
- Baohu Dai
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yueqi Su
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yuqiao Guo
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Changzheng Wu
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yi Xie
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| |
Collapse
|
29
|
Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
Collapse
Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| |
Collapse
|
30
|
Lee H, Kim YB, Ryu JW, Kim S, Bae J, Koo Y, Jang D, Park KD. Recent progress of exciton transport in two-dimensional semiconductors. NANO CONVERGENCE 2023; 10:57. [PMID: 38102309 PMCID: PMC10724105 DOI: 10.1186/s40580-023-00404-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 11/20/2023] [Indexed: 12/17/2023]
Abstract
Spatial manipulation of excitonic quasiparticles, such as neutral excitons, charged excitons, and interlayer excitons, in two-dimensional semiconductors offers unique capabilities for a broad range of optoelectronic applications, encompassing photovoltaics, exciton-integrated circuits, and quantum light-emitting systems. Nonetheless, their practical implementation is significantly restricted by the absence of electrical controllability for neutral excitons, short lifetime of charged excitons, and low exciton funneling efficiency at room temperature, which remain a challenge in exciton transport. In this comprehensive review, we present the latest advancements in controlling exciton currents by harnessing the advanced techniques and the unique properties of various excitonic quasiparticles. We primarily focus on four distinct control parameters inducing the exciton current: electric fields, strain gradients, surface plasmon polaritons, and photonic cavities. For each approach, the underlying principles are introduced in conjunction with its progression through recent studies, gradually expanding their accessibility, efficiency, and functionality. Finally, we outline the prevailing challenges to fully harness the potential of excitonic quasiparticles and implement practical exciton-based optoelectronic devices.
Collapse
Affiliation(s)
- Hyeongwoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Yong Bin Kim
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Jae Won Ryu
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Sujeong Kim
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Jinhyuk Bae
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Yeonjeong Koo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Donghoon Jang
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Kyoung-Duck Park
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
| |
Collapse
|
31
|
Duan Y, Rahmanudin A, Chen S, Kim N, Mohammadi M, Tybrandt K, Jonsson MP. Tuneable Anisotropic Plasmonics with Shape-Symmetric Conducting Polymer Nanoantennas. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303949. [PMID: 37528506 DOI: 10.1002/adma.202303949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Revised: 07/18/2023] [Indexed: 08/03/2023]
Abstract
A wide range of nanophotonic applications rely on polarization-dependent plasmonic resonances, which usually requires metallic nanostructures that have anisotropic shape. This work demonstrates polarization-dependent plasmonic resonances instead by breaking symmetry via material permittivity. The study shows that molecular alignment of a conducting polymer can lead to a material with polarization-dependent plasma frequency and corresponding in-plane hyperbolic permittivity region. This result is not expected based only on anisotropic charge mobility but implies that also the effective mass of the charge carriers becomes anisotropic upon polymer alignment. This unique feature is used to demonstrate circularly symmetric nanoantennas that provide different plasmonic resonances parallel and perpendicular to the alignment direction. The nanoantennas are further tuneable via the redox state of the polymer. Importantly, polymer alignment could blueshift the plasma wavelength and resonances by several hundreds of nanometers, forming a novel approach toward reaching the ultimate goal of redox-tunable conducting polymer nanoantennas for visible light.
Collapse
Affiliation(s)
- Yulong Duan
- Laboratory of Organic Electronics, Department of Science and Technology (ITN), Linköping University, Norrköping, SE-601 74, Sweden
| | - Aiman Rahmanudin
- Laboratory of Organic Electronics, Department of Science and Technology (ITN), Linköping University, Norrköping, SE-601 74, Sweden
| | - Shangzhi Chen
- Laboratory of Organic Electronics, Department of Science and Technology (ITN), Linköping University, Norrköping, SE-601 74, Sweden
| | - Nara Kim
- Laboratory of Organic Electronics, Department of Science and Technology (ITN), Linköping University, Norrköping, SE-601 74, Sweden
| | - Mohsen Mohammadi
- Laboratory of Organic Electronics, Department of Science and Technology (ITN), Linköping University, Norrköping, SE-601 74, Sweden
| | - Klas Tybrandt
- Laboratory of Organic Electronics, Department of Science and Technology (ITN), Linköping University, Norrköping, SE-601 74, Sweden
| | - Magnus P Jonsson
- Laboratory of Organic Electronics, Department of Science and Technology (ITN), Linköping University, Norrköping, SE-601 74, Sweden
| |
Collapse
|
32
|
Naumis GG, Herrera SA, Poudel SP, Nakamura H, Barraza-Lopez S. Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:016502. [PMID: 37879327 DOI: 10.1088/1361-6633/ad06db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
This is an update of a previous review (Naumiset al2017Rep. Prog. Phys.80096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation (P) in graphene, (ii) time-dependent strain and its impact on graphene's electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisationPon hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic (σ), electric (P) and magnetic (M) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI2. The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.
Collapse
Affiliation(s)
- Gerardo G Naumis
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Saúl A Herrera
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Shiva P Poudel
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Hiro Nakamura
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Salvador Barraza-Lopez
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| |
Collapse
|
33
|
Wang F, Xie L, Sun N, Zhi T, Zhang M, Liu Y, Luo Z, Yi L, Zhao Q, Wang L. Deformable Catalytic Material Derived from Mechanical Flexibility for Hydrogen Evolution Reaction. NANO-MICRO LETTERS 2023; 16:32. [PMID: 37999792 PMCID: PMC10673806 DOI: 10.1007/s40820-023-01251-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/21/2023] [Indexed: 11/25/2023]
Abstract
Deformable catalytic material with excellent flexible structure is a new type of catalyst that has been applied in various chemical reactions, especially electrocatalytic hydrogen evolution reaction (HER). In recent years, deformable catalysts for HER have made great progress and would become a research hotspot. The catalytic activities of deformable catalysts could be adjustable by the strain engineering and surface reconfiguration. The surface curvature of flexible catalytic materials is closely related to the electrocatalytic HER properties. Here, firstly, we systematically summarized self-adaptive catalytic performance of deformable catalysts and various micro-nanostructures evolution in catalytic HER process. Secondly, a series of strategies to design highly active catalysts based on the mechanical flexibility of low-dimensional nanomaterials were summarized. Last but not least, we presented the challenges and prospects of the study of flexible and deformable micro-nanostructures of electrocatalysts, which would further deepen the understanding of catalytic mechanisms of deformable HER catalyst.
Collapse
Affiliation(s)
- Fengshun Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Lingbin Xie
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Ning Sun
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Ting Zhi
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
| | - Mengyang Zhang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Yang Liu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Zhongzhong Luo
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Lanhua Yi
- Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, School of Chemistry, Xiangtan University, Xiangtan, 411105, People's Republic of China
| | - Qiang Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM) & Institute of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications, 9 Wenyuan, Nanjing, 210023, People's Republic of China.
| | - Longlu Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
| |
Collapse
|
34
|
Biglarbeigi P, Morelli A, Pauly S, Yu Z, Jiang W, Sharma S, Finlay D, Kumar A, Soin N, Payam AF. Unraveling Spatiotemporal Transient Dynamics at the Nanoscale via Wavelet Transform-Based Kelvin Probe Force Microscopy. ACS NANO 2023; 17:21506-21517. [PMID: 37877266 PMCID: PMC10655243 DOI: 10.1021/acsnano.3c06488] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 10/11/2023] [Indexed: 10/26/2023]
Abstract
Mechanistic probing of surface potential changes arising from dynamic charge transport is the key to understanding and engineering increasingly complex nanoscale materials and devices. Spatiotemporal averaging in conventional heterodyne detection-based Kelvin probe force microscopy (KPFM) inherently limits its time resolution, causing an irretrievable loss of transient response and higher-order harmonics. Addressing this, we report a wavelet transform (WT)-based methodology capable of quantifying the sub-ms charge dynamics and probing the elusive transient response. The feedback-free, open-loop wavelet transform KPFM (OL-WT-KPFM) technique harnesses the WT's ability to simultaneously extract spatial and temporal information from the photodetector signal to provide a dynamic mapping of surface potential, capacitance gradient, and dielectric constant at a temporal resolution 3 orders of magnitude higher than the lock-in time constant. We further demonstrate the method's applicability to explore the surface-photovoltage-induced sub-ms hole-diffusion transient in bismuth oxyiodide semiconductor. The OL-WT-KPFM concept is readily applicable to commercial systems and can provide the underlying basis for the real-time analysis of transient electronic and electrochemical properties.
Collapse
Affiliation(s)
- Pardis Biglarbeigi
- Nanotechnology
and Integrated Bio-Engineering Centre (NIBEC), School of Engineering, Ulster University, York Street, Belfast BT15 1AP, Co. Antrim, Northern
Ireland, United Kingdom
- School
of Science and Engineering, University of
Dundee, Nethergate, Dundee, DD1 4NH, Scotland, United Kingdom
| | - Alessio Morelli
- Nanotechnology
and Integrated Bio-Engineering Centre (NIBEC), School of Engineering, Ulster University, York Street, Belfast BT15 1AP, Co. Antrim, Northern
Ireland, United Kingdom
| | - Serene Pauly
- School
of Mathematics and Physics, Queen’s
University Belfast, University Road, Belfast BT7 1NN, Northern Ireland, United Kingdom
| | - Zidong Yu
- Institute
for Materials Research and Innovation (IMRI), University of Bolton, Deane Road, Bolton BL3
5AB, United Kingdom
| | - Wenjun Jiang
- College
of Transportation Engineering, Dalian Maritime
University, Dalian 116026, China
| | - Surbhi Sharma
- Centre
for New Energy Transition Research Technologies (CfNETR), Federation University Australia, Gippsland Campus, Churchill, Victoria 3810, Australia
| | - Dewar Finlay
- Nanotechnology
and Integrated Bio-Engineering Centre (NIBEC), School of Engineering, Ulster University, York Street, Belfast BT15 1AP, Co. Antrim, Northern
Ireland, United Kingdom
| | - Amit Kumar
- School
of Mathematics and Physics, Queen’s
University Belfast, University Road, Belfast BT7 1NN, Northern Ireland, United Kingdom
| | - Navneet Soin
- Nanotechnology
and Integrated Bio-Engineering Centre (NIBEC), School of Engineering, Ulster University, York Street, Belfast BT15 1AP, Co. Antrim, Northern
Ireland, United Kingdom
- School of
Science, Computing and Engineering Technologies, Swinburne University of Technology,
P.O. Box 218, Hawthorn Victoria 3122, Australia
| | - Amir Farokh Payam
- Nanotechnology
and Integrated Bio-Engineering Centre (NIBEC), School of Engineering, Ulster University, York Street, Belfast BT15 1AP, Co. Antrim, Northern
Ireland, United Kingdom
| |
Collapse
|
35
|
Cho C, Zhang Z, Kim JM, Ma PJ, Haque MF, Snapp P, Nam S. Spatial Tuning of Light-Matter Interaction via Strain-Gradient-Induced Polarization in Freestanding Wrinkled 2D Materials. NANO LETTERS 2023; 23:9340-9346. [PMID: 37796972 PMCID: PMC10603806 DOI: 10.1021/acs.nanolett.3c02550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2023] [Revised: 09/28/2023] [Indexed: 10/07/2023]
Abstract
To date, controlled deformation of two-dimensional (2D) materials has been extensively demonstrated with substrate-supported structures. However, interfacial effects arising from these supporting materials may suppress or alter the unique behavior of the deformed 2D materials. To address interfacial effects, we report, for the first time, the formation of a micrometer-scale freestanding wrinkled structure of 2D material without any encapsulation layers where we observed the enhanced light-matter interactions with a spatial modulation. Freestanding wrinkled monolayer WSe2 exhibited about a 330% enhancement relative to supported wrinkled WSe2 quantified through photoinduced force microscopy. Spatial modulation and enhancement of light interaction in the freestanding wrinkled structures are attributed to the enhanced strain-gradient effect (i.e., out-of-plane polarization) enabled by removing the constraining support and proximate dielectrics. Our findings offer an additional degree of freedom to modulate the out-of-plane polarization and enhance the out-of-plane light-matter interaction in 2D materials.
Collapse
Affiliation(s)
- Chullhee Cho
- Department
of Mechanical Science and Engineering, University
of Illinois Urbana−Champaign, Urbana, Illinois 61801, United States
- Cryogenics
and Fluids Branch, NASA Goddard Space Flight
Center, Greenbelt, Maryland 20771, United States
| | - Zhichao Zhang
- Department
of Mechanical Science and Engineering, University
of Illinois Urbana−Champaign, Urbana, Illinois 61801, United States
| | - Jin Myung Kim
- Department
of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, California 92697, United States
| | - Peiwen J. Ma
- Department
of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, California 92697, United States
| | - Md Farhadul Haque
- Department
of Mechanical Science and Engineering, University
of Illinois Urbana−Champaign, Urbana, Illinois 61801, United States
| | - Peter Snapp
- Department
of Mechanical Science and Engineering, University
of Illinois Urbana−Champaign, Urbana, Illinois 61801, United States
- Detectors
Systems Branch, NASA Goddard Space Flight
Center, Greenbelt, Maryland 20771, United States
| | - SungWoo Nam
- Department
of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, California 92697, United States
- Department
of Materials Science Engineering, University
of California, Irvine, Irvine, California 92697, United States
| |
Collapse
|
36
|
Liu J, Yang X, Fang H, Yan W, Ouyang W, Liu Z. In Situ Twistronics: A New Platform Based on Superlubricity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305072. [PMID: 37867201 DOI: 10.1002/adma.202305072] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 07/19/2023] [Indexed: 10/24/2023]
Abstract
Twistronics, an emerging field focused on exploring the unique electrical properties induced by twist interface in graphene multilayers, has garnered significant attention in recent years. The general manipulation of twist angle depends on the assembly of van der Waals (vdW) layered materials, which has led to the discovery of unconventional superconductivity, ferroelectricity, and nonlinear optics, thereby expanding the realm of twistronics. Recently, in situ tuning of interlayer conductivity in vdW layered materials has been achieved based on scanning probe microscope. In this Perspective, the advancements in in situ twistronics are focused on by reviewing the state-of-the-art in situ manipulating technology, discussing the underlying mechanism based on the concept of structural superlubricity, and exploiting the real-time twistronic tests under scanning electron microscope (SEM). It is shown that the real-time manipulation under SEM allows for visualizing and monitoring the interface status during in situ twistronic testing. By harnessing the unique tribological properties of vdW layered materials, this novel platform not only enhances the fabrication of twistronic devices but also facilitates the fundamental understanding of interface phenomena in vdW layered materials. Moreover, this platform holds great promise for the application of twistronic-mechanical systems, providing avenues for the integration of twistronics into various mechanical frameworks.
Collapse
Affiliation(s)
- Jianxin Liu
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
| | - Xiaoqi Yang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
| | - Hui Fang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
| | - Weidong Yan
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
| | - Wengen Ouyang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
- State Key Laboratory of Water Resources Engineering and Management, Wuhan University, Wuhan, Hubei, 430072, P. R. China
| | - Ze Liu
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
- State Key Laboratory of Water Resources Engineering and Management, Wuhan University, Wuhan, Hubei, 430072, P. R. China
| |
Collapse
|
37
|
Wang H, Li T, Chen Z, Zhu W, Lin W, Wang H, Liu X, Li Z. High out-of-plane negative Poisson's ratios and strong light harvesting in two-dimensional SiS 2 and its derivatives. NANOSCALE 2023; 15:16155-16162. [PMID: 37771318 DOI: 10.1039/d3nr04483a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/30/2023]
Abstract
Two-dimensional (2D) materials with negative Poisson's ratios (NPRs) hold tremendous potential in diverse electronic devices. However, most 2D auxetic materials exhibit small out-of-plane NPRs and materials with bi-directional NPRs are rare. In this work, the SiS2 monolayer and its derivatives MX2 (M = Si, Ge, Sn and X = S, Se, Te) are systematically studied via first-principles simulation. We demonstrate that a SiS2 monolayer possesses a remarkable out-of-plane NPR with a value of -1.09 and an in-plane NPR (-0.13). Furthermore, a higher out-of-plane NPR (-1.79) can be achieved in a SnS2 monolayer by element substitution. Remarkably, SiS2 and its derivative MX2 monolayers exhibit excellent light harvesting over the ultraviolet and visible range, and the corresponding electronic properties show robustness against strains. Our results confirm that MX2 monolayers provide an ideal platform to explore auxeticity in two-dimensional limits.
Collapse
Affiliation(s)
- Haidi Wang
- School of Physics, Hefei University of Technology, Hefei, Anhui 230601, China.
| | - Tao Li
- School of Physics, Hefei University of Technology, Hefei, Anhui 230601, China.
| | - Zhao Chen
- School of Physics, Hefei University of Technology, Hefei, Anhui 230601, China.
| | - Weiduo Zhu
- School of Physics, Hefei University of Technology, Hefei, Anhui 230601, China.
| | - Wei Lin
- School of Physics, Hefei University of Technology, Hefei, Anhui 230601, China.
| | - Huimiao Wang
- School of Civil and Hydraulic Engineering, Hefei University of Technology, Hefei, Anhui 230601, China
| | - Xiaofeng Liu
- School of Physics, Hefei University of Technology, Hefei, Anhui 230601, China.
| | - Zhongjun Li
- School of Physics, Hefei University of Technology, Hefei, Anhui 230601, China.
| |
Collapse
|
38
|
Meng Y, Zhong H, Xu Z, He T, Kim JS, Han S, Kim S, Park S, Shen Y, Gong M, Xiao Q, Bae SH. Functionalizing nanophotonic structures with 2D van der Waals materials. NANOSCALE HORIZONS 2023; 8:1345-1365. [PMID: 37608742 DOI: 10.1039/d3nh00246b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.
Collapse
Affiliation(s)
- Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Hongkun Zhong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Zhihao Xu
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Tiantian He
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Justin S Kim
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Sunok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Seoungwoong Park
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Yijie Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Optoelectronics Research Centre, University of Southampton, Southampton, UK
| | - Mali Gong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Qirong Xiao
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| |
Collapse
|
39
|
Seravalli L, Esposito F, Bosi M, Aversa L, Trevisi G, Verucchi R, Lazzarini L, Rossi F, Fabbri F. Built-in tensile strain dependence on the lateral size of monolayer MoS 2 synthesized by liquid precursor chemical vapor deposition. NANOSCALE 2023; 15:14669-14678. [PMID: 37624579 DOI: 10.1039/d3nr01687k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/26/2023]
Abstract
Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two-dimensional semiconductor, such as molybdenum disulfide, by employing different growth substrates with peculiar thermal properties. In this work, we demonstrate that the built-in strain of MoS2 monolayers, grown on a SiO2/Si substrate by liquid precursor chemical vapor deposition, is mainly dependent on the size of the monolayer. In fact, we identify a critical size equal to 20 μm, from which the built-in strain increases drastically. The built-in strain is the maximum for a 60 μm sized monolayer, leading to 1.2% tensile strain with a partial release of strain close to the monolayer triangular vertexes due to the formation of nanocracks. These findings also imply that the standard method for evaluation of the number of layers based on the Raman mode separation can become unreliable for highly strained monolayers with a lateral size above 20 μm.
Collapse
Affiliation(s)
- L Seravalli
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - F Esposito
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
- Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma, Italy
| | - M Bosi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - L Aversa
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), FBK Trento unit, Via alla Cascata 56/C, 38123 Povo, Trento, Italy
| | - G Trevisi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - R Verucchi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), FBK Trento unit, Via alla Cascata 56/C, 38123 Povo, Trento, Italy
| | - L Lazzarini
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - F Rossi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - F Fabbri
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy.
| |
Collapse
|
40
|
Du K, Huang FT, Gamage K, Yang J, Mostovoy M, Cheong SW. Strain-Control of Cycloidal Spin Order in a Metallic Van der Waals Magnet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303750. [PMID: 37358066 DOI: 10.1002/adma.202303750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 06/06/2023] [Indexed: 06/27/2023]
Abstract
The manipulation of magnetism through strain control is a captivating area of research with potential applications for low-power devices that do not require dissipative currents. Recent investigations of insulating multiferroics have unveiled tunable relationships among polar lattice distortions, Dzyaloshinskii-Moriya interactions (DMI), and cycloidal spin orders that break inversion symmetry. These findings have raised the possibility of utilizing strain or strain gradient to manipulate intricate magnetic states by changing polarization. However, the effectiveness of manipulating cycloidal spin orders in "metallic" materials with screened magnetism-relevant electric polarization remains uncertain. In this study, the reversible strain control of cycloidal spin textures in a metallic van der Waals magnet, Cr1/3 TaS2 , through the modulation of polarization and DMI induced by strain is demonstrated. With thermally-induced biaxial strains and isothermally-applied uniaxial strains, systematic manipulation of the sign and wavelength of the cycloidal spin textures is realized, respectively. Additionally, unprecedented reflectivity reduction under strain and domain modification at a record-low current density are also discovered. These findings establish a connection between polarization and cycloidal spins in metallic materials and present a new avenue for utilizing the remarkable tunability of cycloidal magnetic textures and optical functionality in van der Waals metals with strain.
Collapse
Affiliation(s)
- Kai Du
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA
| | - Fei-Ting Huang
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA
| | - Kasun Gamage
- Department of Physics, New Jersey Institute of Technology, Newark, New Jersey, 07102, USA
| | - Junjie Yang
- Department of Physics, New Jersey Institute of Technology, Newark, New Jersey, 07102, USA
| | - Maxim Mostovoy
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Sang-Wook Cheong
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA
| |
Collapse
|
41
|
Ren H, Xiang G. Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2378. [PMID: 37630963 PMCID: PMC10459406 DOI: 10.3390/nano13162378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2023] [Revised: 08/09/2023] [Accepted: 08/17/2023] [Indexed: 08/27/2023]
Abstract
Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (TC) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.
Collapse
Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Wangjiang Road No. 29, Chengdu 610064, China
| |
Collapse
|
42
|
Wu X, Luo X, Cheng H, Yang R, Chen X. Recent progresses on ion beam irradiation induced structure and performance modulation of two-dimensional materials. NANOSCALE 2023; 15:8925-8947. [PMID: 37102719 DOI: 10.1039/d3nr01366a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Two-dimensional (2D) materials are receiving significant attention for both fundamental research and industrial applications due to their unparalleled properties and wide application potential. In this case, the controllable modulation of their structures and properties is essential for the realization and further expansion of their applications. Accordingly, ion beam irradiation techniques, with large scope to adjust parameters, high manufacturing resolution, and a series of advanced equipment being developed, have been demonstrated to have obvious advantages in manipulating the structure and performance of 2D materials. In recent years, many research efforts have been devoted to uncovering the underlying mechanism and control rules regarding ion irradiation induced phenomena in 2D materials, aiming at fulfilling their application potential as soon as possible. Herein, we review the research progress in the interaction between energetic ions and 2D materials based on the energy transfer model, type of ion source, structural modulation, performance modification of 2D materials, and then their application status, aiming to provide useful information for researchers in this field and stimulating more research advances.
Collapse
Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Xinchun Luo
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Hailong Cheng
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Ruxue Yang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Xiyue Chen
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| |
Collapse
|
43
|
Lee S, Choi WH, Cho H, Lee SH, Choi W, Joo J, Lee D, Gong SH. Electric-Field-Driven Trion Drift and Funneling in MoSe 2 Monolayer. NANO LETTERS 2023; 23:4282-4289. [PMID: 37167152 PMCID: PMC10215787 DOI: 10.1021/acs.nanolett.3c00460] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2023] [Revised: 05/08/2023] [Indexed: 05/13/2023]
Abstract
Excitons, electron-hole pairs in semiconductors, can be utilized as information carriers with a spin or valley degree of freedom. However, manipulation of excitons' motion is challenging because of their charge-neutral characteristic and short recombination lifetimes. Here we demonstrate electric-field-driven drift and funneling of charged excitons (i.e., trions) toward the center of a MoSe2 monolayer. Using a simple bottom-gate device, we control the electric fields in the vicinity of the suspended monolayer, which increases the trion density and pulls down the layer. We observe that locally excited trions are subjected to electric force and, consequently, drift toward the center of the stretched layer. The exerting electric force on the trion is estimated to be 102-104 times stronger than the strain-induced force in the stretched monolayer, leading to the successful observation of trion drift under continuous-wave excitation. Our findings provide a new route for manipulating trions and achieving new types of optoelectronic devices.
Collapse
Affiliation(s)
- Seong
Won Lee
- Department
of Physics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
- KU
Photonics Center, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Woo Hun Choi
- Department
of Physics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
- KU
Photonics Center, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - HyunHee Cho
- Department
of Physics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Sang-hun Lee
- Department
of Physics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Wookyoung Choi
- Department
of Physics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jinsoo Joo
- Department
of Physics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Donghun Lee
- Department
of Physics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Su-Hyun Gong
- Department
of Physics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
- KU
Photonics Center, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| |
Collapse
|
44
|
Gao X, Fu S, Fang T, Yu X, Wang H, Ji Q, Kong J, Wang X, Liu J. Synergistic Photon Management and Strain-Induced Band Gap Engineering of Two-Dimensional MoS 2 Using Semimetal Composite Nanostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:23564-23572. [PMID: 37130097 DOI: 10.1021/acsami.2c23163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
2D MoS2 attracts increasing attention for its application in flexible electronics and photonic devices. For 2D material optoelectronic devices, the light absorption of the molecularly thin 2D absorber would be one of the key limiting factors in device efficiency, and conventional photon management techniques are not necessarily compatible with them. In this study, we show two semimetal composite nanostructures deposited on 2D MoS2 for synergistic photon management and strain-induced band gap engineering: (1) the pseudo-periodic Sn nanodots, (2) the conductive SnOx (x < 1) core-shell nanoneedle structures. Without sophisticated nanolithography, both nanostructures are self-assembled from physical vapor deposition. Optical absorption enhancement spans from the visible to the near-infrared regime. 2D MoS2 achieves >8× optical absorption enhancement at λ = 700-940 nm and 3-4× at λ = 500-660 nm under Sn nanodots, and 20-30× at λ = 700-900 nm under SnOx (x < 1) nanoneedles. The enhanced absorption in MoS2 results from strong near-field enhancement and reduced MoS2 band gap due to the tensile strain induced by the Sn nanostructures, as confirmed by Raman and photoluminescence spectroscopy. Especially, we demonstrate that up to 3.5% biaxial tensile strain is introduced to 2D MoS2 using conductive nanoneedle-structured SnOx (x < 1), which reduces the band gap by ∼0.35 eV to further enhance light absorption at longer wavelengths. To the best of our knowledge, this is the first demonstration of a synergistic triple-functional photon management, stressor, and conductive electrode layer on 2D MoS2. Such synergistic photon management and band gap engineering approach for extended spectral response can be further applied to other 2D materials for future 2D photonic devices.
Collapse
Affiliation(s)
- Xiaoxue Gao
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| | - Sidan Fu
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| | - Tao Fang
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| | - Xiaobai Yu
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Qingqing Ji
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Xiaoxin Wang
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| | - Jifeng Liu
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| |
Collapse
|
45
|
Cao C, Melegari M, Philippi M, Domaretskiy D, Ubrig N, Gutiérrez-Lezama I, Morpurgo AF. Full Control of Solid-State Electrolytes for Electrostatic Gating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211993. [PMID: 36812653 DOI: 10.1002/adma.202211993] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Revised: 02/10/2023] [Indexed: 05/05/2023]
Abstract
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here, a class of solid-state electrolytes for gating (Lithium-ion conducting glass-ceramics, LICGCs) is explored, the processes responsible for the spurious phenomena and irreproducible behavior are identified, and properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ≈ 20 - 50 µ F c m - 2 \[20{\bm{ - }}50\;\mu F c{m^{{\bm{ - }}2}}\] (depending on the polarity of the accumulated charges) are demonstrated. Using 2D semiconducting transition-metal dichalcogenides, the ability to implement ionic-gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 1014 cm-2 are demostrated, resulting in gate-induced superconductivity in MoS2 multilayers. As LICGCs are implemented in a back-gate configuration, they leave the surface of the material exposed, enabling the use of surface-sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic-gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field.
Collapse
Affiliation(s)
- Chuanwu Cao
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Margherita Melegari
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Marc Philippi
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Daniil Domaretskiy
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Nicolas Ubrig
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| |
Collapse
|
46
|
Calis M, Lloyd D, Boddeti N, Bunch JS. Adhesion of 2D MoS 2 to Graphite and Metal Substrates Measured by a Blister Test. NANO LETTERS 2023; 23:2607-2614. [PMID: 37011413 DOI: 10.1021/acs.nanolett.2c04886] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Using a blister test, we measured the work of separation between MoS2 membranes from metal, semiconductor, and graphite substrates. We found a work of separation ranging from 0.11 ± 0.05 J/m2 for chromium to 0.39 ± 0.1 J/m2 for graphite substrates. In addition, we measured the work of adhesion of MoS2 membranes over these substrates and observed a dramatic difference between the work of separation and adhesion, which we attribute to adhesion hysteresis. Due to the prominent role that adhesive forces play in the fabrication and functionality of devices made from 2D materials, an experimental determination of the work of separation and adhesion as provided here will help guide their development.
Collapse
Affiliation(s)
- Metehan Calis
- Boston University, Department of Mechanical Engineering, Boston, Massachusetts 02215, United States
| | - David Lloyd
- Analog Garage, Analog Devices Inc., Boston, Massachusetts 02110, United States
| | - Narasimha Boddeti
- Washington State University, School of Mechanical and Materials Engineering, Pullman, Washington 99163, United States
| | - J Scott Bunch
- Boston University, Department of Mechanical Engineering, Boston, Massachusetts 02215, United States
- Boston University, Division of Materials Science and Engineering, Brookline, Massachusetts 02446, United States
| |
Collapse
|
47
|
Rhee D, Lee YAL, Odom TW. Area-Specific, Hierarchical Nanowrinkling of Two-Dimensional Materials. ACS NANO 2023; 17:6781-6788. [PMID: 36989457 DOI: 10.1021/acsnano.3c00033] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
This paper describes an approach to generate hierarchical wrinkles in two-dimensional (2D) electronic materials with spatial control over adjacent wavelengths. A rigid fluoropolymer mold was used to pattern a sacrificial polymer skin layer on monolayer graphene, molybdenum disulfide, and hexagonal boron nitride on prestrained thermoplastic sheets. Strain relief and removal of the polymer layer resulted in 2D-material wrinkles whose wavelengths scaled linearly with the local skin thickness. A second generation of wrinkles could be created on top of the first generation by applying a subsequent cycle of polymer skin coating, strain relief, and polymer removal. This area-specific hierarchical wrinkling is general and will facilitate the engineering of the local properties of various 2D materials and their heterostructures.
Collapse
|
48
|
Park MU, Kim M, Kim SH, Lee C, Lee KS, Jeong J, Cho MH, Kim DY, Yoo KH. Funnel Devices Based on Asymmetrically Strained Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209788. [PMID: 36750416 DOI: 10.1002/adma.202209788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 01/17/2023] [Indexed: 06/18/2023]
Abstract
The strain applied to transition metal dichalcogenides (TMDs) reduces their energy bandgap, and local strains result in a funnel-like band structure in which funneled excitons move toward the most strained region. Herein, a funnel device based on asymmetrically strained WS2 and MoS2 is reported. Asymmetric strains are induced by transferring the TMD flakes onto a fork-shaped SU-8 microstructure. Raman and photoluminescence spectra peaks are shifted according to the morphology of the SU-8 microstructure, indicating the application of asymmetric strains to the TMDs. To investigate whether funneled excitons can be converted to electrical currents, various devices are constructed by depositing symmetric and asymmetric electrodes onto the strained TMDs. The scanning photocurrent mapping images follow a fork-shaped pattern, indicating probable conversion of the funneled excitons into electrical currents. In the case of the funnel devices with asymmetric Au and Al electrodes, short-circuit current (ISC ) of WS2 is enhanced by the strains, whereas ISC of MoS2 is suppressed because the Schottky barrier lowers with increasing strain for the MoS2 . These results demonstrate that the funnel devices can be implemented using asymmetrically strained TMDs and the effect of strains on the Schottky barrier is dependent on the TMD used.
Collapse
Affiliation(s)
- Myung Uk Park
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Myeongjin Kim
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Sung Hyun Kim
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - ChangJun Lee
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Kyo-Seok Lee
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Jaehun Jeong
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Mann-Ho Cho
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Dug Young Kim
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| | - Kyung-Hwa Yoo
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea
| |
Collapse
|
49
|
Ghosh R, Papnai B, Chen YS, Yadav K, Sankar R, Hsieh YP, Hofmann M, Chen YF. Exciton Manipulation for Enhancing Photoelectrochemical Hydrogen Evolution Reaction in Wrinkled 2D Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210746. [PMID: 36756807 DOI: 10.1002/adma.202210746] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Revised: 01/16/2023] [Indexed: 06/18/2023]
Abstract
2D materials' junctions have demonstrated capabilities as metal-free alternatives for the hydrogen evolution reaction (HER). To date, the HER has been limited to heterojunctions of different compositions or band structures. Here, the potential of local strain modulation based on wrinkled 2D heterostructures is demonstrated, which helps to realize photoelectrocatalytically active junctions. By forming regions of high and low tensile strain in wrinkled WS2 monolayers, local modification of their band structure and internal electric field due to piezoelectricity is realized in the lateral direction. This structure produces efficient electron-hole pair generation due to light trapping and exciton funneling toward the crest of the WS2 wrinkles and enhances exciton separation. Additionally, the formation of wrinkles induces an air gap in-between the 2D layer and substrate, which reduces the interfacial scattering effect and consequently improves the charge-carrier mobility. A detailed study of the strain-dependence of the photocatalytic HER process demonstrates a 2-fold decrease in the Tafel slope and a 30-fold enhancement in exchange current density. Finally, optimization of the light absorption through functionalization with quantum dots produces unprecedented photoelectrocatalytic performance and provides a route toward the scalable formation of strain-modulated WS2 nanojunctions for future green energy generation.
Collapse
Affiliation(s)
- Rapti Ghosh
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 106, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 115, Taiwan
- Department of Physics, National Central University, Chung-Li, 320, Taiwan
- Department of Physics, National Taiwan University, Taipei, 106, Taiwan
| | - Bhartendu Papnai
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu City, 300044, Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 106, Taiwan
- Institute of Physics, Academia Sinica, Taipei, 106, Taiwan
| | - Yu-Siang Chen
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 106, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 115, Taiwan
- Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi, 62102, Taiwan
| | - Kanchan Yadav
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 106, Taiwan
| | - Raman Sankar
- Institute of Physics, Academia Sinica, Taipei, 106, Taiwan
| | - Ya-Ping Hsieh
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 106, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 115, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei, 106, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, Taipei, 106, Taiwan
- Advanced Research Centre for Green Materials Science and Technology, National Taiwan, University, Taipei, 106, Taiwan
| |
Collapse
|
50
|
Thoutam LR, Mathew R, Ajayan J, Tayal S, Nair SV. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS 2field-effect transistors. NANOTECHNOLOGY 2023; 34:232001. [PMID: 36731113 DOI: 10.1088/1361-6528/acb826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Accepted: 02/02/2023] [Indexed: 06/18/2023]
Abstract
The voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices. Molybdenum disulfide (MoS2) is a two-dimensional layered material with novel semiconducting properties at atomic level seems like a promising candidate that can possibly meet the expectation of Moore's law. This review discusses the various 'fabrication challenges' in making MoS2based electronic devices from start to finish. The review outlines the intricate challenges of substrate selection and various synthesis methods of mono layer and few-layer MoS2. The review focuses on the various techniques and methods to minimize interface defect density at substrate/MoS2interface for optimum MoS2-based device performance. The tunable band-gap of MoS2with varying thickness presents a unique opportunity for contact engineering to mitigate the contact resistance issue using different elemental metals. In this work, we present a comprehensive overview of different types of contact materials with myriad geometries that show a profound impact on device performance. The choice of different insulating/dielectric gate oxides on MoS2in co-planar and vertical geometry is critically reviewed and the physical feasibility of the same is discussed. The experimental constraints of different encapsulation techniques on MoS2and its effect on structural and electronic properties are extensively discussed.
Collapse
Affiliation(s)
- Laxman Raju Thoutam
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
| | - Ribu Mathew
- School of Electrical & Electronics Engineering, VIT Bhopal University, Bhopal, 466114, India
| | - J Ajayan
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shubham Tayal
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shantikumar V Nair
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
| |
Collapse
|