1
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Su C, Yan H, Li H, Yan J, Tong L, Wang X, Fan W, Wang Q, Yin S. Controlled growth of 3R phase niobium diselenide and its properties. J Colloid Interface Sci 2024; 670:28-40. [PMID: 38754329 DOI: 10.1016/j.jcis.2024.05.036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 03/31/2024] [Accepted: 05/07/2024] [Indexed: 05/18/2024]
Abstract
Inversion symmetry broken 3R phase transition metal dichalcogenides (TMDs) show fascinating prospects in spintronics, valleytronics, and nonlinear optics. However, the controlled synthesis of 3R phase TMDs is still a great challenge. In this work, two-dimensional 3R-NbSe2 single crystals up to 0.2 mm were synthesized for the first time through chemical vapor deposition method by designing a space-confined system. The crystal size and morphology can be controlled by the location of the stacked substrates and the amount of the Nb2O5 precursor. Scanning transmission electron microscopy and Raman measurements reveal the NbSe2 exhibits a pure 3R stacking mode with relatively weak interlayer van der Waals interactions. Importantly, 3R-NbSe2 shows obvious second harmonic generation signal which intensity intensified as thickness increases. Density functional theory calculations and optical absorption demonstrate the coexistence of metallic and semiconducting optical properties of 3R-NbSe2. We designed a NbSe2/WS2/NbSe2 photodetector utilizing the metallicity of 3R-NbSe2, which shows good performance especially an ultrafast response (6-7 μs, 0.5 ms - 7.9 s for Au electrodes in literature). The proposed strategy and findings are of great significance for the growth of many other 3R-TMDs and applications of nonlinear optical and ultrafast devices.
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Affiliation(s)
- Can Su
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Hui Yan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Heng Li
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China; Jiujiang Research Institute of Xiamen University, Jiujiang 332000, China
| | - Jinjian Yan
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
| | - Lei Tong
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Xinyu Wang
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Wenhao Fan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Qingguo Wang
- GuoAng Zhuotai (Tianjin) Smart IOT Technology Co., Ltd, Tianjin 301700, China
| | - Shougen Yin
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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2
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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3
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Li L, Zhang G, Younis M, Luo T, Yang L, Jin W, Wu H, Xiao B, Zhang W, Chang H. 2D Tellurium Films Based Self-Drive Near Infrared Photodetector. Chemphyschem 2024; 25:e202400383. [PMID: 38661567 DOI: 10.1002/cphc.202400383] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2024] [Revised: 04/23/2024] [Accepted: 04/23/2024] [Indexed: 04/26/2024]
Abstract
To reduce the amount of energy consumed in integrated circuits, high efficiency with the lowest energy is always expected. Self-drive device is one of the options in the pursuit of low power nanodevices. It is a typical strategy to form an internal electric field by constructing a heterojunction in self-drive semiconductor system. Here, a two-step method is proposed to prepare high quality centimeter-sized 2D tellurium (Te) thin film with hall mobility as high as 37.3 cm2 V-1 s-1, and the 2D Te film is further assembled with silicon to form a heterojunction for self-drive photodetector, which can realize effective detection from visible to near infrared bands. The photodetectivity of the heterojunctions can reach 1.58×1011 Jones under the illumination of 400 nm@ 1.615 mW/cm2 and 2.08×108 Jones under the illumination of 1550 nm@ 1.511 mW/cm2 without bias. Our experiments demonstrate the potential of 2D tellurium thin films for wide band and near infrared integrated device applications.
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Affiliation(s)
- Luji Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Micro and Nano Devices Fabrication Center, Yongjiang Laboratory, Ningbo, 315202, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Gaojie Zhang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Muhammad Younis
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Tianyuan Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Li Yang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wen Jin
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wu
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Bichen Xiao
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wenfeng Zhang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Haixin Chang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
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4
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Mahatha SK, Phillips J, Corral-Sertal J, Subires D, Korshunov A, Kar A, Buck J, Diekmann F, Garbarino G, Ivanov YP, Chuvilin A, Mondal D, Vobornik I, Bosak A, Rossnagel K, Pardo V, Fumega AO, Blanco-Canosa S. Self-Stacked 1T-1H Layers in 6R-NbSeTe and the Emergence of Charge and Magnetic Correlations Due to Ligand Disorder. ACS NANO 2024. [PMID: 39086092 DOI: 10.1021/acsnano.4c02005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
The emergence of correlated phenomena arising from the combination of 1T and 1H van der Waals layers is the focus of intense research. Here, we synthesize a self-stacked 6R phase in NbSeTe, showing perfect alternating 1T and 1H layers that grow coherently along the c-direction, as revealed by scanning transmission electron microscopy. Angle-resolved photoemission spectroscopy shows a mixed contribution of the trigonal and octahedral Nb bands to the Fermi level. Diffuse scattering reveals temperature-independent short-range charge fluctuations with propagation vector qCO = (0.25 0), derived from the condensation of a longitudinal mode in the 1T layer, while the long-range charge density wave is quenched by ligand disorder. Magnetization measurements suggest the presence of an inhomogeneous, short-range magnetic order, further supported by the absence of a clear phase transition in the specific heat. These experimental analyses in combination with ab initio calculations indicate that the ground state of 6R-NbSeTe is described by a statistical distribution of short-range charge-modulated and spin-correlated regions driven by ligand disorder. Our results demonstrate how natural 1T-1H self-stacked bulk heterostructures can be used to engineer emergent phases of matter.
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Affiliation(s)
- Sanjoy K Mahatha
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
- Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany
| | - Jan Phillips
- Departamento de Física Aplicada, Universidade de Santiago de Compostela, Campus Sur s/n, E-15782 Santiago de Compostela, Spain
- Instituto de Materiais iMATUS, Universidade de Santiago de Compostela, Campus Sur s/n, E-15782 Santiago de Compostela, Spain
| | - Javier Corral-Sertal
- Departamento de Física Aplicada, Universidade de Santiago de Compostela, Campus Sur s/n, E-15782 Santiago de Compostela, Spain
- CiQUS, Centro Singular de Investigacion en Quimica Biolóxica e Materiais Moleculares, Departamento de Quimica-Fisica, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Spain
| | - David Subires
- Donostia International Physics Center (DIPC), E-20018 San Sebastián, Spain
- University of the Basque Country (UPV/EHU), Basque Country, Bilbao 48080 Spain
| | - Artem Korshunov
- European Synchrotron Radiation Facility (ESRF), BP 220, F-38043 Grenoble Cedex, France
| | - Arunava Kar
- Donostia International Physics Center (DIPC), E-20018 San Sebastián, Spain
| | - Jens Buck
- Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany
| | - Florian Diekmann
- Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany
| | - Gaston Garbarino
- European Synchrotron Radiation Facility (ESRF), BP 220, F-38043 Grenoble Cedex 9, France
| | - Yurii P Ivanov
- Electron Spectroscopy and Nanoscopy, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Andrey Chuvilin
- CIC Nanogune, E-20018 San Sebastián, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Spain
| | - Debashis Mondal
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, 34149 Trieste, Italy
- Sovarani Memorial College, Jagatballavpur, Howrah 711408, India
| | - Ivana Vobornik
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, 34149 Trieste, Italy
| | - Alexei Bosak
- European Synchrotron Radiation Facility (ESRF), BP 220, F-38043 Grenoble Cedex, France
| | - Kai Rossnagel
- Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany
| | - Victor Pardo
- Departamento de Física Aplicada, Universidade de Santiago de Compostela, Campus Sur s/n, E-15782 Santiago de Compostela, Spain
- Instituto de Materiais iMATUS, Universidade de Santiago de Compostela, Campus Sur s/n, E-15782 Santiago de Compostela, Spain
| | - Adolfo O Fumega
- Department of Applied Physics, Aalto University, 02150 Espoo, Finland
| | - Santiago Blanco-Canosa
- Donostia International Physics Center (DIPC), E-20018 San Sebastián, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Spain
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5
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Pham T, Reidy K, Thomsen JD, Wang B, Deshmukh N, Filler MA, Ross FM. Salt-Assisted Vapor-Liquid-Solid Growth of 1D van der Waals Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309360. [PMID: 38479025 DOI: 10.1002/adma.202309360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 11/27/2023] [Indexed: 03/20/2024]
Abstract
The method of salt-assisted vapor-liquid-solid (VLS) growth is introduced to synthesize 1D nanostructures of trichalcogenide van der Waals (vdW) materials, exemplified by niobium trisulfide (NbS3). The method uses a unique catalyst consisting of an alloy of Au and an alkali metal halide (NaCl) to enable rapid and directional growth. High yields of two types of NbS3 1D nanostructures, nanowires and nanoribbons, each with sub-ten nanometer diameter, tens of micrometers length, and distinct 1D morphology and growth orientation are demonstrated. Strategies to control the location, size, and morphology of growth, and extend the growth method to synthesize other transition metal trichalcogenides, NbSe3 and TiS3, as nanowires are demonstrated. Finally, the role of the Au-NaCl alloy catalyst in guiding VLS synthesis is described and the growth mechanism based on the relationships measured between structure (growth orientation, morphology, and dimensions) and growth conditions (catalyst volume and growth time) is discussed. These results introduce opportunities to expand the library of emerging 1D vdW materials to make use of their unique properties through controlled growth at nanoscale dimensions.
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Affiliation(s)
- Thang Pham
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Kate Reidy
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Joachim D Thomsen
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Baoming Wang
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Nishant Deshmukh
- School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Michael A Filler
- School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
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6
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Christudas Beena N, Magnard NPL, Puggioni D, Dos Reis R, Chatterjee K, Zhan X, Dravid VP, Rondinelli JM, Jensen KMØ, Skrabalak SE. Influence of Composition and Structure on the Optoelectronic Properties of Photocatalytic Bi 4NbO 8Cl-Bi 2GdO 4Cl Intergrowths. Inorg Chem 2024; 63:8131-8141. [PMID: 38639743 DOI: 10.1021/acs.inorgchem.4c00306] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Mixed metal oxyhalides are an exciting class of photocatalysts, capable of the sustainable generation of fuels and remediation of pollutants with solar energy. Bismuth oxyhalides of the types Bi4MO8X (M = Nb and Ta; X = Cl and Br) and Bi2AO4X (A = most lanthanides; X = Cl, Br, and I) have an electronic structure that imparts photostability, as their valence band maxima (VBM) are composed of O 2p orbitals rather than X np orbitals that typify many other bismuth oxyhalides. Here, flux-based synthesis of intergrowth Bi4NbO8Cl-Bi2GdO4Cl is reported, testing the hypothesis that both intergrowth stoichiometry and M identity serve as levers toward tunable optoelectronic properties. X-ray scattering and atomically resolved electron microscopy verify intergrowth formation. Facile manipulation of the Bi4NbO8Cl-to-Bi2GdO4Cl ratio is achieved with the specific ratio influencing both the crystal and electronic structures of the intergrowths. This compositional flexibility and crystal structure engineering can be leveraged for photocatalytic applications, with comparisons to the previously reported Bi4TaO8Cl-Bi2GdO4Cl intergrowth revealing how subtle structural and compositional features can impact photocatalytic materials.
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Affiliation(s)
- Nayana Christudas Beena
- Department of Chemistry, Indiana University-Bloomington, 800 E. Kirkwood Ave, Bloomington, Indiana 47405, United States
| | - Nicolas P L Magnard
- Department of Chemistry, University of Copenhagen, Copenhagen DK-2100, Denmark
| | - Danilo Puggioni
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Roberto Dos Reis
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Kaustav Chatterjee
- Department of Chemistry, Indiana University-Bloomington, 800 E. Kirkwood Ave, Bloomington, Indiana 47405, United States
| | - Xun Zhan
- Department of Chemistry, Indiana University-Bloomington, 800 E. Kirkwood Ave, Bloomington, Indiana 47405, United States
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, Northwestern University, Evanston, Illinois 60208, United States
- International Institute of Nanotechnology, Northwestern University, Evanston, Illinois 60208, United States
| | - James M Rondinelli
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Kirsten M Ø Jensen
- Department of Chemistry, University of Copenhagen, Copenhagen DK-2100, Denmark
| | - Sara E Skrabalak
- Department of Chemistry, Indiana University-Bloomington, 800 E. Kirkwood Ave, Bloomington, Indiana 47405, United States
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7
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Wang H, Zhang J, Shen C, Yang C, Küster K, Deuschle J, Starke U, Zhang H, Isobe M, Huang D, van Aken PA, Takagi H. Direct visualization of stacking-selective self-intercalation in epitaxial Nb 1+xSe 2 films. Nat Commun 2024; 15:2541. [PMID: 38514672 PMCID: PMC10957900 DOI: 10.1038/s41467-024-46934-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Accepted: 03/14/2024] [Indexed: 03/23/2024] Open
Abstract
Two-dimensional (2D) van der Waals (vdW) materials offer rich tuning opportunities generated by different stacking configurations or by introducing intercalants into the vdW gaps. Current knowledge of the interplay between stacking polytypes and intercalation often relies on macroscopically averaged probes, which fail to pinpoint the exact atomic position and chemical state of the intercalants in real space. Here, by using atomic-resolution electron energy-loss spectroscopy in a scanning transmission electron microscope, we visualize a stacking-selective self-intercalation phenomenon in thin films of the transition-metal dichalcogenide (TMDC) Nb1+xSe2. We observe robust contrasts between 180°-stacked layers with large amounts of Nb intercalants inside their vdW gaps and 0°-stacked layers with little detectable intercalants inside their vdW gaps, coexisting on the atomic scale. First-principles calculations suggest that the films lie at the boundary of a phase transition from 0° to 180° stacking when the intercalant concentration x exceeds ~0.25, which we could attain in our films due to specific kinetic pathways. Our results offer not only renewed mechanistic insights into stacking and intercalation, but also open up prospects for engineering the functionality of TMDCs via stacking-selective self-intercalation.
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Affiliation(s)
- Hongguang Wang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany.
| | - Jiawei Zhang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Chen Shen
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany.
| | - Chao Yang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Kathrin Küster
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Julia Deuschle
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Ulrich Starke
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Hongbin Zhang
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany
| | - Masahiko Isobe
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Dennis Huang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany.
| | - Peter A van Aken
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Hidenori Takagi
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
- Institute for Functional Matter and Quantum Technologies, University of Stuttgart, 70569, Stuttgart, Germany
- Department of Physics, University of Tokyo, 113-0033, Tokyo, Japan
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8
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Shein K, Zharkova E, Kashchenko M, Kolbatova A, Lyubchak A, Elesin L, Nguyen E, Semenov A, Charaev I, Schilling A, Goltsman G, Novoselov KS, Gayduchenko I, Bandurin DA. Fundamental Limits of Few-Layer NbSe 2 Microbolometers at Terahertz Frequencies. NANO LETTERS 2024; 24:2282-2288. [PMID: 38345381 DOI: 10.1021/acs.nanolett.3c04493] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Superconducting hot-electron bolometers (HEBs), known for their exceptional signal-to-noise ratio and fast photoresponse, play a crucial role in these applications. While superconducting HEBs are traditionally crafted from sputtered thin films such as NbN, the potential of layered van der Waals (vdW) superconductors is untapped at THz frequencies. Here, we introduce superconducting HEBs made from few-layer NbSe2 microwires. By improving the interface between NbSe2 and metal leads, we overcome impedance mismatch with RF readout, enabling large responsivity THz detection (0.13 to 2.5 THz) with a minimal noise equivalent power of 7 pW/ H z and nanosecond-range response time. Our work highlights NbSe2 as a promising platform for HEB technology and presents a reliable vdW assembly protocol for custom bolometer production.
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Affiliation(s)
- Kirill Shein
- Moscow Pedagogical State University, Moscow, Russia 119991
- National Research University Higher School of Economics, Moscow, Russia 101000
| | - Ekaterina Zharkova
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia 127495
| | - Mikhail Kashchenko
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia 127495
| | - Anna Kolbatova
- Moscow Pedagogical State University, Moscow, Russia 119991
| | - Anastasia Lyubchak
- Moscow Pedagogical State University, Moscow, Russia 119991
- National Research University Higher School of Economics, Moscow, Russia 101000
| | - Leonid Elesin
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia 127495
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575
| | - Ekaterina Nguyen
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia 127495
| | | | | | | | - Gregory Goltsman
- Moscow Pedagogical State University, Moscow, Russia 119991
- National Research University Higher School of Economics, Moscow, Russia 101000
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575
| | - Igor Gayduchenko
- Moscow Pedagogical State University, Moscow, Russia 119991
- National Research University Higher School of Economics, Moscow, Russia 101000
| | - Denis A Bandurin
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575
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9
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Hoat DM, Van On V, Van Huan P, Guerrero-Sanchez J. Realizing new 2D spintronic materials from the non-magnetic 1T-PdO 2 monolayer through vacancy defects and doping. RSC Adv 2024; 14:7241-7250. [PMID: 38419674 PMCID: PMC10901215 DOI: 10.1039/d3ra08866a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 02/12/2024] [Indexed: 03/02/2024] Open
Abstract
In this work, vacancy- and doping-based magnetism engineering in a non-magnetic 1T-PdO2 monolayer is explored in order to realize new two-dimensional (2D) spintronic materials. The pristine monolayer is an indirect gap semiconductor with a band gap of 1.45 (3.20) eV obtained using the PBE (HSE06) functional. Half-metallicity with a total magnetic moment of 3.95 μB is induced by creating a single Pd vacancy, where the magnetic properties are produced mainly by O atoms around the vacancy site. In contrast, the non-magnetic nature is preserved under the effects of a single O vacancy, however a band gap reduction in the order of 37.93% is achieved. Further doping with transition metals (TMs = V, Cr, Mn, and Fe) in the Pd sublattice and with non-metals (B, C, N, and F) in the O sublattice is investigated. TM impurities lead to the emergence of a diluted magnetic semiconductor nature, where total magnetic moments of 1.00, 2.00, and 3.00 μB are obtained in the V-, Cr(Fe)-, and Mn-doped systems, respectively. In these cases, the TMs' 3d electrons mainly originate the system's magnetism. Significant magnetization of the PdO2 monolayer is also achieved by doping with B, N, and F atoms, where either half-metallic or diluted magnetic semiconductor natures are induced. Herein, electronic and magnetic properties are regulated mainly by the interactions between the 2p orbital of the dopant, 4d orbital of the first neighbor Pd atoms, and 2p orbital of the second neighbor O atoms. Meanwhile, C impurity induces no magnetism in the PdO2 monolayer because of the strong electronic hybridization with their neighbor atoms. Results presented herein may introduce efficient approaches to engineer magnetism in a non-magnetic PdO2 monolayer, such that the functionalized systems are further recommended for prospective spintronic applications.
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Affiliation(s)
- D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Vo Van On
- Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University Binh Duong Province Vietnam
| | - Phan Van Huan
- Faculty of Basic Science, Binh Duong University, Binh Duong Province Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico
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10
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Coelho PM. Magnetic doping in transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:203001. [PMID: 38324890 DOI: 10.1088/1361-648x/ad271b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Accepted: 02/07/2024] [Indexed: 02/09/2024]
Abstract
Transition metal dichalcogenides (TMDCs) are materials with unique electronic properties due to their two-dimensional nature. Recently, there is a large and growing interest in synthesizing ferromagnetic TMDCs for applications in electronic devices and spintronics. Apart from intrinsically magnetic examples, modification via either intrinsic defects or external dopants may induce ferromagnetism in non-magnetic TMDCs and, hence expand the application of these materials. Here, we review recent experimental work on intrinsically non-magnetic TMDCs that present ferromagnetism as a consequence of either intrinsic defects or doping via self-flux approach, ion implantation or e-beam evaporation. The experimental work discussed here is organized by modification/doping mechanism. We also review current work on density functional theory calculations that predict ferromagnetism in doped systems, which also serve as preliminary data for the choice of new doped TMDCs to be explored experimentally. Implementing a controlled process to induce magnetism in two-dimensional materials is key for technological development and this topical review discusses the fundamental procedures while presenting promising materials to be investigated in order to achieve this goal.
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Affiliation(s)
- Paula Mariel Coelho
- Department of Physics, University of North Florida, Jacksonville, FL, United States of America
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11
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Li Y, Cao J, Chen G, He L, Du X, Xie J, Wang Y, Hu W. Scalable Production of Highly Conductive 2D NbSe 2 Monolayers with Superior Electromagnetic Interference Shielding Performance. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6250-6260. [PMID: 38284410 DOI: 10.1021/acsami.3c15817] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
Thin, flexible, and electrically conductive films are in demand for electromagnetic interference (EMI) shielding. Two-dimensional NbSe2 monolayers have an electrical conductivity comparable to those of metals (106-107 S m-1) but are challenging for high-quality and scalable production. Here, we show that electrochemical exfoliation of flake NbSe2 powder produces monolayers on a large scale (tens of grams), at a high yield (>75%, monolayer), and with a large average lateral size (>20 μm). The as-exfoliated NbSe2 monolayer flakes are easily dispersed in diverse organic solvents and solution-processed into various macroscopic structures (e.g., free-standing films, coatings, patterns, etc.). Thermal annealing of the free-standing NbSe2 films reduces the interlayer distance of restacked NbSe2 from 1.18 to 0.65 nm and consequently enhances the electrical conductivity to 1.16 × 106 S m-1, which is superior to those of MXenes and reduced graphene oxide. The optimized NbSe2 film shows an EMI shielding effectiveness (SE) of 65 dB at a thickness of 5 μm (>110 dB for a 48-μm-thick film), among the highest in materials of similar thicknesses. Moreover, a laminate of two layers of the NbSe2 film (2 μm thick) with an insulating interlayer shows a high SE of 85 dB, surpassing that of the 20-μm-thick NbSe2 film (83 dB). A two-layer theoretical model is proposed, and it agrees with the experimental EMI SE of the laminated NbSe2 films. The ability to produce NbSe2 monolayers on a tens of grams scale will enable their diverse applications beyond EMI shielding.
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Affiliation(s)
- Yong Li
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, School of Materials and Energy, Yunnan University, Kunming 650500, P. R. China
| | - Jianyun Cao
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, School of Materials and Energy, Yunnan University, Kunming 650500, P. R. China
| | - Guoliang Chen
- Institute for Advanced Ceramics, Key Laboratory of Advanced Structure-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information Technology, Harbin Institute of Technology, Harbin 150001, P. R. China
- School of Energy Science and Engineering, Key Laboratory of Aerospace Thermophysics, Ministry of Industry and Information Technology, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Lijun He
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, School of Materials and Energy, Yunnan University, Kunming 650500, P. R. China
| | - Xincheng Du
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, School of Materials and Energy, Yunnan University, Kunming 650500, P. R. China
| | - Jiyang Xie
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, School of Materials and Energy, Yunnan University, Kunming 650500, P. R. China
- Electron Microscopy Center, Yunnan University, Kunming 650500, P. R. China
| | - Yaming Wang
- Institute for Advanced Ceramics, Key Laboratory of Advanced Structure-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information Technology, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Wanbiao Hu
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, School of Materials and Energy, Yunnan University, Kunming 650500, P. R. China
- Electron Microscopy Center, Yunnan University, Kunming 650500, P. R. China
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12
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Zheng B, Feng X, Liu B, Liu Z, Wang S, Zhang Y, Ma X, Luo Y, Wang C, Li R, Zhang Z, Cui S, Lu Y, Sun Z, He J, Yang SA, Xiang B. The Coexistence of Superconductivity and Topological Order in Van der Waals InNbS 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305909. [PMID: 37759426 DOI: 10.1002/smll.202305909] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Revised: 09/06/2023] [Indexed: 09/29/2023]
Abstract
The research on systems with coexistence of superconductivity and nontrivial band topology has attracted widespread attention. However, the limited availability of material platforms severely hinders the research progress. Here, it reports the first experimental synthesis and measurement of high-quality single crystal van der Waals transition-metal dichalcogenide InNbS2 , revealing it as a topological nodal line semimetal with coexisting superconductivity. The temperature-dependent measurements of magnetization susceptibility and electrical transport show that InNbS2 is a type-II superconductor with a transition temperature Tc of 6 K. First-principles calculations predict multiple topological nodal ring states close to the Fermi level in the presence of spin-orbit coupling. Similar features are also observed in the as-synthesized BiNbS2 and PbNbS2 samples. This work provides new material platforms ANbS2 (A = In, Bi, and Pb) and uncovers their intriguing potential for exploring the interplay between superconductivity and band topology.
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Affiliation(s)
- Bo Zheng
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, 230026, China
| | - Xukun Feng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Bo Liu
- Department of Physics and CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zhanfeng Liu
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui, 230029, China
| | - Shasha Wang
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, 230026, China
| | - Ying Zhang
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, 230026, China
| | - Xiang Ma
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, 230026, China
| | - Yang Luo
- Department of Physics and CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Changlong Wang
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, 230026, China
| | - Ruimin Li
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, 230026, China
| | - Zeying Zhang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Shengtao Cui
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui, 230029, China
| | - Yalin Lu
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, 230026, China
| | - Zhe Sun
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui, 230029, China
| | - Junfeng He
- Department of Physics and CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Bin Xiang
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, 230026, China
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13
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Han W, Feng J, Dong H, Cheng M, Yang L, Yu Y, Du G, Li J, Du Y, Zhang T, Wang Z, Chen B, Shi J, Chen Y. Pressure-Modulated Structural and Magnetic Phase Transitions in Two-Dimensional FeTe: Tetragonal and Hexagonal Polymorphs. NANO LETTERS 2024; 24:966-974. [PMID: 38206580 DOI: 10.1021/acs.nanolett.3c04384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Two-dimensional (2D) Fe chalcogenides with their rich structures and properties are highly desirable for revealing the torturous transition mechanism of Fe chalcogenides and exploring their potential applications in spintronics and nanoelectronics. Hydrostatic pressure can effectively stimulate phase transitions between various ordered states, allowing one to successfully plot a phase diagram for a given material. Herein, the structural evolution and transport characteristics of 2D FeTe were systematically investigated under extreme conditions by comparing two distinct symmetries, i.e., tetragonal (t) and hexagonal (h) FeTe. We found that t-FeTe presented a pressure-induced transition from an antiferromagnetic state to a ferromagnetic state at ∼3 GPa, corresponding to the tetragonal collapse of the layered structure. Contrarily, the ferromagnetic order of h-FeTe was retained up to 15 GPa, which was evidently confirmed by electrical transport and Raman measurements. Furthermore, T-P phase diagrams for t-FeTe and h-FeTe were mapped under delicate critical conditions. Our results can provide a unique platform to elaborate the extraordinary properties of Fe chalcogenides and further develop their applications.
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Affiliation(s)
- Wuxiao Han
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jiajia Feng
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Liu Yang
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yunfei Yu
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Guoshuai Du
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jiayin Li
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yubing Du
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Tiansong Zhang
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Zhiwei Wang
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Yabin Chen
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 400030, China
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14
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Van On V, Guerrero-Sanchez J, Hoat DM. Modifying the electronic and magnetic properties of the scandium nitride semiconductor monolayer via vacancies and doping. Phys Chem Chem Phys 2024; 26:3587-3596. [PMID: 38214549 DOI: 10.1039/d3cp04977a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
In this work, the effects of vacancies and doping on the electronic and magnetic properties of the stable scandium nitride (ScN) monolayer are investigated using first-principles calculations. The pristine monolayer is a two-dimensional (2D) indirect-gap semiconductor material with an energy gap of 1.59(2.84) eV as calculated using the GGA-PBE (HSE06) functional. The projected density of states, charge distribution, and electron localization function assert its ionic character generated by the charge transfer from the Sc atoms to the N atoms. The monolayer is magnetized by a single Sc vacancy with a total magnetic moment of 3.00μB, while a single N vacancy causes a weaker magnetization with a total magnetic moment of 0.52μB. In both cases, the magnetism originates mainly from the atoms closest to the defect site. Significant magnetization is also reached by doping with acceptor impurities. Specifically, a total magnetic moment of 2.00μB is obtained by doping with alkali metals (Li and Na) in the Sc sublattice and with B in the N sublattice. Doping with alkaline earth metals (Be and Mg) in the Sc sublattice and with C in the N sublattice induces a value of 1.00μB. In these cases, either magnetic semiconducting or half-metallicity characteristics arise in the ScN monolayer, making it a prospective 2D spintronic material. In contrast, no magnetism is induced by doping with donor impurities (O and F atoms) in the N sublattice. An O impurity metallizes the monolayer; meanwhile, F doping leads to a large band-gap reduction of the order of 82%, widening the working regime of the monolayer in optoelectronic devices. The results presented herein may introduce efficient methods to functionalize the ScN monolayer for optoelectronic and spintronic applications.
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Affiliation(s)
- Vo Van On
- Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University, Binh Duong Province, Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Código Postal 22800, Baja California, Mexico
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam.
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
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15
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Xu X, Zhang C, Yin J, Smajic J, Bahabri M, Lei Y, Hedhili MN, Hota MK, Shi L, Guo T, Zheng D, El-Demellawi JK, Lanza M, Costa PMFJ, Bakr OM, Mohammed OF, Zhang X, Alshareef HN. Anisotropic Superconducting Nb 2 CT x MXene Processed by Atomic Exchange at the Wafer Scale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305326. [PMID: 37907810 DOI: 10.1002/adma.202305326] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/04/2023] [Revised: 10/17/2023] [Indexed: 11/02/2023]
Abstract
Superconductivty has recently been induced in MXenes through surface modification. However, the previous reports have mostly been based on powders or cold-pressed pellets, with no known reports on the intrinsic superconsucting properties of MXenes at the nanoale. Here, it is developed a high-temperature atomic exchange process in NH3 atmosphere which induces superconductivity in either singleflakes or thin films of Nb2 CTx MXene. The exchange process between nitrogen atoms and fluorine, carbon, and oxygen atoms in the MXene lattice and related structural adjustments are studied using both experiments and density functional theory. Using either single-flake or thin-film devices, an anisotropic magnetic response of the 2D superconducting transformation has been successfully revealed. The anisotropic superconductivity is further demonstrated using superconducting thin films uniformly deposited over a 4 in. wafers, which opens up the possibility of scalable MXene-based superconducting devices.
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Affiliation(s)
- Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Chenghui Zhang
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jun Yin
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077, Hong Kong
| | - Jasmin Smajic
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mohammed Bahabri
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yongjiu Lei
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mohamed Nejib Hedhili
- Core Laboratories, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mrinal K Hota
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Lin Shi
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tianchao Guo
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jehad K El-Demellawi
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- KAUST Upstream Research Center (KURC), EXPEC-ARC, Saudi Aramco, Thuwal, 23955, Saudi Arabia
| | - Mario Lanza
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Pedro M F J Costa
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Osman M Bakr
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Omar F Mohammed
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Advanced Membranes and Porous Materials (AMPM) Center and KAUST Catalysis Center, PSE Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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16
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Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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17
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Li Y, Wang K, Wang Y, Qian Z, Huang W, Wang J, Yang Q, Wang H, Liao J, Hussain S, Xie L, Qi J. Synthesis of component-controllable monolayer Mo xW (1-x)S 2ySe 2(1-y) alloys with continuously tunable band gap and carrier type. RSC Adv 2023; 13:34464-34474. [PMID: 38024984 PMCID: PMC10667966 DOI: 10.1039/d3ra07065d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 11/17/2023] [Indexed: 12/01/2023] Open
Abstract
Alloying can effectively modify electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). However, efficient and simple methods to synthesize atomically thin TMD alloys need to be further developed. In this study, we synthesized 25 monolayer MoxW(1-x)S2ySe2(1-y) alloys by using a new liquid phase edge epitaxy (LPEE) growth method with high controllability. This straightforward approach can be used to obtain monolayer materials and operates on a self-limiting growth mechanism. The process allows the liquid solution to come into contact with the two-dimensional grains only at their edges, resulting in epitaxy confined only along the in-plane direction, which produces exclusively monolayer epitaxy. By controlling the weight ratio of MoS2/WSe2 (MoSe2/WS2), 25 monolayer MoxW(1-x)S2ySe2(1-y) alloys with different atomic ratios can be obtained on sapphire substrates, with band gap ranging from WS2 (1.55 eV) to MoSe2 (1.99 eV) and a continuously broad spectrum ranging from 623 nm to 800 nm. By adjusting the alloy composition, the carrier type and carrier mobility of alloy-based field-effect transistors can be modulated. In particular, the adjustable conductivity of MoxW(1-x)S2ySe2(1-y) alloys from n-type to bipolar type is achieved for the first time. This general synthetic strategy provides a foundation for the development of monolayer TMD alloys with multiple components and various 2D materials.
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Affiliation(s)
- You Li
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Kangkang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Yiwen Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Wenbin Huang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Junqi Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Qichao Yang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Honggang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Junyi Liao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Sabir Hussain
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
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18
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Zou X, Xie M, Wang R, Liang H, Li Y, Tian F, Sun Y, Wang C. Two-Dimensional Superconductivity in Air-Stable Single-Crystal Few-Layer Bi 3O 2S 3. J Am Chem Soc 2023; 145:20975-20984. [PMID: 37703097 DOI: 10.1021/jacs.3c06854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/14/2023]
Abstract
The progress of unconventional superconductors at the two-dimensional (2D) limit has inspired much interest. Recently, a new superconducting system was discovered in the semimetallic ternary Bi-O-S family. However, pure-phase crystals are difficult to synthesize because of the complicated stacking sequence of multiple charged layers and similar formation kinetics among ternary polytypes, leaving several fundamental issues regarding the structure-superconductivity correlation unresolved. Herein, 2D single-crystal ultrathin Bi3O2S3 nanosheets are prepared by using low-pressure chemical vapor deposition, and their atomic arrangement is clarified. Magnetotransport measurements indicate a superconducting transition at ∼6.1 K that is thickness-independent. The transport results demonstrate 2D superconducting characteristics, such as the Berezinskii-Kosterlitz-Thouless transition, and strong anisotropy with magnetic field orientations following the 2D Tinkham formula. The difference from superconductivity of powder is demonstrated from the perspective of their corresponding microstructures. These results corroborate the superconducting behavior of Bi3O2S3, providing fresh insights into the search for other bismuth oxychalcogenides and derivative BiS2-based analogues at the 2D limit.
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Affiliation(s)
- Xiaobin Zou
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Mingyuan Xie
- School of Physics, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Ruize Wang
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Haikuan Liang
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Yan Li
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Fei Tian
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Yong Sun
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Chengxin Wang
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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19
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Zhang Z, Dong X, Chen J, Liu Z, Gao Z, Chang X, Du Y, Jia C, Fu H, Luo F, Wu J. Transferred Polymer-Encapsulated Metal Electrodes for Electrical Transport Measurements on Ultrathin Air-Sensitive Crystals. SMALL METHODS 2023; 7:e2300177. [PMID: 37287373 DOI: 10.1002/smtd.202300177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Revised: 05/29/2023] [Indexed: 06/09/2023]
Abstract
Owing to rapid property degradation after ambient exposure and incompatibility with conventional device fabrication process, electrical transport measurements on air-sensitive 2D materials have always been a big issue. Here, for the first time, a facile one-step polymer-encapsulated electrode transfer (PEET) method applicable for fragile 2D materials is developed, which showed great advantages of damage-free electrodes patterning and in situ polymer encapsulation preventing from H2 O/O2 exposure during the whole electrical measurements process. The ultrathin SmTe2 metals grown by chemical vapor deposition (CVD) are chosen as the prototypical air-sensitive 2D crystals for their poor air-stability, which will become highly insulating when fabricated by conventional lithographic techniques. Nevertheless, the intrinsic electrical properties of CVD-grown SmTe2 nanosheets can be readily investigated by the PEET method instead, showing ultralow contact resistance and high signal/noise ratio. The PEET method can be applicable to other fragile ultrathin magnetic materials, such as (Mn,Cr)Te, to investigate their intrinsic electrical/magnetic properties.
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Affiliation(s)
- Zheshan Zhang
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Xinyue Dong
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Jiabiao Chen
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Zhaochao Liu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Zhansheng Gao
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Xinyue Chang
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Yaping Du
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Chuancheng Jia
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Huixia Fu
- Center of Quantum Materials and Devices & College of Physics, Chongqing University, Chongqing, 401331, China
| | - Feng Luo
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Jinxiong Wu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
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20
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Zhou Z, Hou F, Huang X, Wang G, Fu Z, Liu W, Yuan G, Xi X, Xu J, Lin J, Gao L. Stack growth of wafer-scale van der Waals superconductor heterostructures. Nature 2023; 621:499-505. [PMID: 37674075 DOI: 10.1038/s41586-023-06404-x] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Accepted: 07/05/2023] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted considerable attention in recent years1-5. The most widely used method of fabrication is to stack mechanically exfoliated micrometre-sized flakes6-18, but this process is not scalable for practical applications. Despite thousands of 2D materials being created, using various stacking combinations1-3,19-21, hardly any large 2D superconductors can be stacked intact into vdW heterostructures, greatly restricting the applications for such devices. Here we report a high-to-low temperature strategy for controllably growing stacks of multiple-layered vdW superconductor heterostructure (vdWSH) films at a wafer scale. The number of layers of 2D superconductors in the vdWSHs can be precisely controlled, and we have successfully grown 27 double-block, 15 triple-block, 5 four-block and 3 five-block vdWSH films (where one block represents one 2D material). Morphological, spectroscopic and atomic-scale structural analyses reveal the presence of parallel, clean and atomically sharp vdW interfaces on a large scale, with very little contamination between neighbouring layers. The intact vdW interfaces allow us to achieve proximity-induced superconductivity and superconducting Josephson junctions on a centimetre scale. Our process for making multiple-layered vdWSHs can easily be generalized to other situations involving 2D materials, potentially accelerating the design of next-generation functional devices and applications22-24.
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Affiliation(s)
- Zhenjia Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fuchen Hou
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Gang Wang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, China
| | - Zihao Fu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Weilin Liu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Guowen Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Junhao Lin
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China.
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, China.
| | - Libo Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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21
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Wang H, Yin XZ, Liu Y, Li YP, Ni MY, Jiao N, Lu HY, Zhang P. Hydrogenation induced high-temperature superconductivity in two-dimensional W 2C 3. Phys Chem Chem Phys 2023; 25:22171-22178. [PMID: 37565262 DOI: 10.1039/d3cp02316h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/12/2023]
Abstract
The discovery of highly crystalline two-dimensional (2D) superconductors provides a new alluring branch for exploring the fundamental significances. Based on first-principles calculations, we predict a new kind of 2D stable material W2C3, which is a semimetal but not a superconductor because of the weak electron-phonon coupling (EPC) strength. After hydrogenation, W2C3H2 possesses the intrinsic metallic properties with a large density of states (DOS) at the Fermi energy (EF). More interestingly, the EPC strength is greatly enhanced after hydrogenation and the calculated critical temperature (Tc) is 40.5 K. Furthermore, the compressive strain can obviously soften the low-frequency phonons and enhance the EPC strength. Then, the Tc of W2C3H2 can be increased from 40.5 K to 49.1 K with -4% compressive strain. This work paves the way for providing a new platform for 2D superconductivity.
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Affiliation(s)
- Hao Wang
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Xin-Zhu Yin
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Yang Liu
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Ya-Ping Li
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Mei-Yan Ni
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Na Jiao
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Hong-Yan Lu
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Ping Zhang
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
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22
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Ma L, Wang X, Wang H, Wang X, Zou G, Guan Y, Guo S, Li H, Chen Q, Kang L, Zhang L, Wu P. van der Waals Self-Epitaxial Growth of Inch-Sized Superconducting Niobium Diselenide Films. NANO LETTERS 2023; 23:6892-6899. [PMID: 37470724 DOI: 10.1021/acs.nanolett.3c01283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
Ultrathin superconducting films are the basis of superconductor devices. van der Waals (vdW) NbSe2 with noncentrosymmetry exhibits exotic superconductivity and shows promise in superconductor electronic devices. However, the growth of inch-scale NbSe2 films with layer regulation remains a challenge because vdW structural material growth is strongly dependent on the epitaxial guidance of the substrate. Herein, a vdW self-epitaxy strategy is developed to eliminate the substrate driving force in film growth and realize inch-sized NbSe2 film growth with thicknesses from 2.1 to 12.1 nm on arbitrary substrates. The superconducting transition temperature of 5.1 K and superconducting transition width of 0.30 K prove the top homogeneity and quality of superconductivity among all of the synthetic NbSe2 films. Coupled with a large area and substrate compatibility, this work paves the way for developing NbSe2 superconductor electronics.
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Affiliation(s)
- Liang Ma
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Xiaohan Wang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Hao Wang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
| | - Xiangyi Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Yanqiu Guan
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Shuya Guo
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Haochen Li
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Qi Chen
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Lin Kang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Labao Zhang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Peiheng Wu
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
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23
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Wang X, Wang H, Ma L, Zhang L, Yang Z, Dong D, Chen X, Li H, Guan Y, Zhang B, Chen Q, Shi L, Li H, Qin Z, Tu X, Zhang L, Jia X, Chen J, Kang L, Wu P. Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits. Nat Commun 2023; 14:4282. [PMID: 37463894 DOI: 10.1038/s41467-023-39997-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Accepted: 07/07/2023] [Indexed: 07/20/2023] Open
Abstract
Superconducting nanocircuits, which are usually fabricated from superconductor films, are the core of superconducting electronic devices. While emerging transition-metal dichalcogenide superconductors (TMDSCs) with exotic properties show promise for exploiting new superconducting mechanisms and applications, their environmental instability leads to a substantial challenge for the nondestructive preparation of TMDSC nanocircuits. Here, we report a universal strategy to fabricate TMDSC nanopatterns via a topotactic conversion method using prepatterned metals as precursors. Typically, robust NbSe2 meandering nanowires can be controllably manufactured on a wafer scale, by which a superconducting nanowire circuit is principally demonstrated toward potential single photon detection. Moreover, versatile superconducting nanocircuits, e.g., periodical circle/triangle hole arrays and spiral nanowires, can be prepared with selected TMD materials (NbS2, TiSe2, or MoTe2). This work provides a generic approach for fabricating nondestructive TMDSC nanocircuits with precise control, which paves the way for the application of TMDSCs in future electronics.
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Affiliation(s)
- Xiaohan Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Hao Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
| | - Liang Ma
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Labao Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
| | - Zhuolin Yang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Daxing Dong
- Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Xi Chen
- Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Haochen Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Yanqiu Guan
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Biao Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Qi Chen
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lili Shi
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Hui Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Zhi Qin
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Xuecou Tu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lijian Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Xiaoqing Jia
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
- Hefei National Laboratory, Hefei, 230088, China
| | - Jian Chen
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lin Kang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
- Hefei National Laboratory, Hefei, 230088, China
| | - Peiheng Wu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
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24
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Li L, Yao J, Zhu J, Chen Y, Wang C, Zhou Z, Zhao G, Zhang S, Wang R, Li J, Wang X, Lu Z, Xiao L, Zhang Q, Zou G. Colloid driven low supersaturation crystallization for atomically thin Bismuth halide perovskite. Nat Commun 2023; 14:3764. [PMID: 37353502 DOI: 10.1038/s41467-023-39445-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Accepted: 06/13/2023] [Indexed: 06/25/2023] Open
Abstract
It is challenging to grow atomically thin non-van der Waals perovskite due to the strong electronic coupling between adjacent layers. Here, we present a colloid-driven low supersaturation crystallization strategy to grow atomically thin Cs3Bi2Br9. The colloid solution drives low-concentration solute in a supersaturation state, contributing to initial heterogeneous nucleation. Simultaneously, the colloids provide a stable precursor source in the low-concentration solute. The surfactant is absorbed in specific crystal nucleation facet resulting in the anisotropic growth of planar dominance. Ionic perovskite Cs3Bi2Br9 is readily grown from monolayered to six-layered Cs3Bi2Br9 corresponding to thicknesses of 0.7, 1.6, 2.7, 3.6, 4.6 and 5.7 nm. The atomically thin Cs3Bi2Br9 presents layer-dependent nonlinear optical performance and stacking-induced second harmonic generation. This work provides a concept for growing atomically thin halide perovskite with non-van der Waal structures and demonstrates potential application for atomically thin single crystals' growth with strong electronic coupling between adjacent layers.
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Affiliation(s)
- Lutao Li
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Junjie Yao
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Juntong Zhu
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Yuan Chen
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, China
| | - Chen Wang
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, China
| | - Zhicheng Zhou
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Guoxiang Zhao
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Sihan Zhang
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Ruonan Wang
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Jiating Li
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Xiangyi Wang
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Zheng Lu
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Lingbo Xiao
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
| | - Qiang Zhang
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, China
| | - Guifu Zou
- College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China.
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25
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Xu X, Lu C, Wang Y, Bai X, Liu Z, Zhang Y, Hua D. Two dimensional NbSe 2/Nb 2O 5 metal-semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility. NANOSCALE HORIZONS 2023. [PMID: 37326422 DOI: 10.1039/d3nh00172e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two dimensional (2D) metal-semiconductor heterostructures are promising for high-performance optoelectronic devices due to fast carrier separation and transportation. Considering the superior metallic characteristics accompanied by high electrical conductivity in NbSe2, surface oxidation provides a facile way to form NbSe2/Nb2O5 metal-semiconductor heterostructures. Herein, size-dependent NbSe2/Nb2O5 nanosheets were achieved by a liquid phase exfoliation method and a gradient centrifugation strategy. These NbSe2/Nb2O5 heterostructure-based photodetectors show high responsivity with 23.21 μA W-1, fast response time of millisecond magnitude, and wide band detection ability in the UV-Vis region. It is noticeable that the photocurrent density is sensitive to the surface oxygen layer due to the oxygen-sensitized photoconduction mechanism. The flexible testing of the NbSe2/Nb2O5 heterostructure-based PEC-type photodetectors exhibits high photodetection performance even after bending and twisting. Beyond that, the solid-state PEC-type NbSe2/Nb2O5 photodetector also achieves relatively stable photodetection and high stability. This work promotes the application of 2D NbSe2/Nb2O5 metal-semiconductor heterostructures in flexible optoelectronic devices.
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Affiliation(s)
- Xiang Xu
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
| | - Chunhui Lu
- Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Ying Wang
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
| | - Xing Bai
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
| | - Zenghui Liu
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
| | - Ying Zhang
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
| | - Dengxin Hua
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China.
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26
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Kim M, Son M, Seo DB, Kim J, Jang M, Kim DI, Lee S, Yim S, Song W, Myung S, Yoo JW, Lee SS, An KS. Dual Catalytic and Self-Assembled Growth of Two-Dimensional Transition Metal Dichalcogenides Through Simultaneous Predeposition Process. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206350. [PMID: 36866498 DOI: 10.1002/smll.202206350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2022] [Revised: 02/10/2023] [Indexed: 06/02/2023]
Abstract
The recent introduction of alkali metal halide catalysts for chemical vapor deposition (CVD) of transition metal dichalcogenides (TMDs) has enabled remarkable two-dimensional (2D) growth. However, the process development and growth mechanism require further exploration to enhance the effects of salts and understand the principles. Herein, simultaneous predeposition of a metal source (MoO3 ) and salt (NaCl) by thermal evaporation is adopted. As a result, remarkable growth behaviors such as promoted 2D growth, easy patterning, and potential diversity of target materials can be achieved. Step-by-step spectroscopy combined with morphological analyses reveals a reaction path for MoS2 growth in which NaCl reacts separately with S and MoO3 to form Na2 SO4 and Na2 Mo2 O7 intermediates, respectively. These intermediates provide a favorable environment for 2D growth, including an enhanced source supply and liquid medium. Consequently, large grains of monolayer MoS2 are formed by self-assembly, indicating the merging of small equilateral triangular grains on the liquid intermediates. This study is expected to serve as an ideal reference for understanding the principles of salt catalysis and evolution of CVD in the preparation of 2D TMDs.
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Affiliation(s)
- Minsu Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Minkyun Son
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulju-gun, Ulsan, 44919, Republic of Korea
| | - Dong-Bum Seo
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jin Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Moonjeong Jang
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Dong In Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Seunghun Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jung-Woo Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulju-gun, Ulsan, 44919, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Ki-Seok An
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
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27
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Song X, Singha R, Cheng G, Yeh YW, Kamm F, Khoury JF, Hoff BL, Stiles JW, Pielnhofer F, Batson PE, Yao N, Schoop LM. Synthesis of an aqueous, air-stable, superconducting 1T'-WS 2 monolayer ink. SCIENCE ADVANCES 2023; 9:eadd6167. [PMID: 36947621 PMCID: PMC10032609 DOI: 10.1126/sciadv.add6167] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Accepted: 02/22/2023] [Indexed: 06/18/2023]
Abstract
Liquid-phase chemical exfoliation can achieve industry-scale production of two-dimensional (2D) materials for a wide range of applications. However, many 2D materials with potential applications in quantum technologies often fail to leave the laboratory setting because of their air sensitivity and depreciation of physical performance after chemical processing. We report a simple chemical exfoliation method to create a stable, aqueous, surfactant-free, superconducting ink containing phase-pure 1T'-WS2 monolayers that are isostructural to the air-sensitive topological insulator 1T'-WTe2. The printed film is metallic at room temperature and superconducting below 7.3 kelvin, shows strong anisotropic unconventional superconducting behavior with an in-plane and out-of-plane upper critical magnetic field of 30.1 and 5.3 tesla, and is stable at ambient conditions for at least 30 days. Our results show that chemical processing can make nontrivial 2D materials that were formerly only studied in laboratories commercially accessible.
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Affiliation(s)
- Xiaoyu Song
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Ratnadwip Singha
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Guangming Cheng
- Princeton Institute for Science and Technology of Materials, Princeton, NJ 08544, USA
| | - Yao-Wen Yeh
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
| | - Franziska Kamm
- Institute of Inorganic Chemistry, University of Regensburg, D-93040 Regensburg, Germany
| | - Jason F. Khoury
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Brianna L. Hoff
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Joseph W. Stiles
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Florian Pielnhofer
- Institute of Inorganic Chemistry, University of Regensburg, D-93040 Regensburg, Germany
| | - Philip E. Batson
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
| | - Nan Yao
- Princeton Institute for Science and Technology of Materials, Princeton, NJ 08544, USA
| | - Leslie M. Schoop
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
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28
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Yu T, Shen R, Wu Z, Du C, Shen X, Jia N, Deng H, Zhao Y, Zhang L, Feng Y, Zhang Z, Luo Y, Zhou F, Wang D. Monolayer NbSe 2 Favors Ultralow Friction and Super Wear Resistance. NANO LETTERS 2023; 23:1865-1871. [PMID: 36790333 DOI: 10.1021/acs.nanolett.2c04811] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The urgent demand for atomically thin, superlubricating, and super wear-resistant materials in micro/nanoelectromechanical systems has stimulated the research of friction-reducing and antiwear materials. However, the fabrication of subnanometer-thick films with superlubricating and super wear-resistant properties under ambient conditions remains a huge challenge. Herein, high-quality monolayer (ML) NbSe2 (∼0.8 nm) with ultralow friction and super wear resistance in an atmospheric environment was successfully grown by chemical vapor deposition (CVD) for the first time. Moreover, compared with few-layered (FL) NbSe2, ML NbSe2 has a lower friction coefficient and better wear resistance. On the basis of density function theory (DFT) calculations, the adhesion and the degree of charge transfer between ML NbSe2 and the substrate is larger than that of the topmost layer to the underlying layers of NbSe2 with two or more layers, which can be used to explain that the ML NbSe2 favors ultralow friction and super wear resistance.
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Affiliation(s)
- Tongtong Yu
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Qingdao Center of Resource Chemistry and New Materials, Qingdao 266100, China
| | - Ruilin Shen
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China
| | - Zishuai Wu
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Changhe Du
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaojun Shen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Ning Jia
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Haoyu Deng
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongkang Zhao
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Qingdao Center of Resource Chemistry and New Materials, Qingdao 266100, China
| | - Liqiang Zhang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Qingdao Center of Resource Chemistry and New Materials, Qingdao 266100, China
| | - Yange Feng
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Qingdao Center of Resource Chemistry and New Materials, Qingdao 266100, China
| | - Zhinan Zhang
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yong Luo
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China
| | - Feng Zhou
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Daoai Wang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Qingdao Center of Resource Chemistry and New Materials, Qingdao 266100, China
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29
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Khan U, Nairan A, Khan K, Li S, Liu B, Gao J. Salt-Assisted Low-Temperature Growth of 2D Bi 2 O 2 Se with Controlled Thickness for Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206648. [PMID: 36538737 DOI: 10.1002/smll.202206648] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Bi2 O2 Se is the most promising 2D material due to its semiconducting feature and high mobility, making it propitious channel material for high-performance electronics that demands highly crystalline Bi2 O2 Se at low-growth temperature. Here, a low-temperature salt-assisted chemical vapor deposition approach for growing single-domain Bi2 O2 Se on a millimeter scale with thicknesses of multilayer to monolayer is presented. Because of the advantage of thickness-dependent growth, systematical scrutiny of layer-dependent Raman spectroscopy of Bi2 O2 Se from monolayer to bulk is investigated, revealing a redshift of the A1g mode at 162.4 cm-1 . Moreover, the long-term environmental stability of ≈2.4 nm thick Bi2 O2 Se is confirmed after exposing the sample for 1.5 years to air. The backgated field effect transistor (FET) based on a few-layered Bi2 O2 Se flake represents decent carrier mobility (≈287 cm2 V-1 s-1 ) and an ON/OFF ratio of up to 107 . This report indicates a technique to grow large-domain thickness controlled Bi2 O2 Se single crystals for electronics.
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Affiliation(s)
- Usman Khan
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, P. R. China
| | - Adeela Nairan
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, P. R. China
| | - Karim Khan
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan, 523808, P. R. China
| | - Sean Li
- School of Materials Science and Engineering, The University of New South Wales, Sydney, 2052, Australia
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junkuo Gao
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, P. R. China
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30
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 22] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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31
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Tunability of the Superconductivity of NbSe 2 Films Grown by Two-Step Vapor Deposition. Molecules 2023; 28:molecules28031059. [PMID: 36770735 PMCID: PMC9921890 DOI: 10.3390/molecules28031059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Revised: 01/19/2023] [Accepted: 01/19/2023] [Indexed: 01/24/2023] Open
Abstract
Layered metallic transition-metal dichalcogenides (TMDCs) are ideal platforms for exploring their fascinating electronic properties at two-dimensional limits, such as their charge density wave (CDW) and superconductivity. Therefore, developing ways to improve the crystallization quality of TMDCs is urgently needed. Here we report superconductively tunable NbSe2 grown by a two-step vapor deposition method. By optimizing the sputtering conditions, superconducting NbSe2 films were prepared from highly crystalline Nb films. The bilayer NbSe2 films showed a superconducting transition temperature that was up to 3.1 K. Similar to the salt-assisted chemical vapor deposition (CVD) method, superconducting monolayer NbSe2 crystals were also grown from a selenide precursor, and the growth strategy is suitable for many other TMDCs. Our growth method not only provides a way to improve the crystalline quality of TMDC films, but also gives new insight into the growth of monolayer TMDCs. It holds promise for exploring two-dimensional TMDCs in fundamental research and device applications.
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32
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Ye Z, Tan C, Huang X, Ouyang Y, Yang L, Wang Z, Dong M. Emerging MoS 2 Wafer-Scale Technique for Integrated Circuits. NANO-MICRO LETTERS 2023; 15:38. [PMID: 36652150 PMCID: PMC9849648 DOI: 10.1007/s40820-022-01010-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.
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Affiliation(s)
- Zimeng Ye
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Xiaolei Huang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China
| | - Yi Ouyang
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China.
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark.
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33
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Contreras R, Celentano D, Luo T, Liu Z, Morales-Ferreiro JO. Phonon Dominated Thermal Transport in Metallic Niobium Diselenide from First Principles Calculations. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:315. [PMID: 36678068 PMCID: PMC9865647 DOI: 10.3390/nano13020315] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2022] [Revised: 01/03/2023] [Accepted: 01/03/2023] [Indexed: 06/17/2023]
Abstract
Niobium diselenide (NbSe2) is a layered transition metal dichalcogenide material which possesses unique electrical and superconducting properties for future nanodevices. While the superconducting, electrical, and bulk thermal transport properties of NbSe2 have been widely studied, the in-plane thermal transport property of NbSe2, which is important for potential thermoelectric applications, has not been thoroughly investigated. In this report, we study the lattice in-plane thermal transport of 2D NbSe2 by solving the phonon Boltzmann transport equation with the help of the first principles calculation. The thermal conductivity obtained at room temperature is 12.3 W/mK. A detailed analysis shows that the transverse acoustic phonon dominates the lattice thermal transport, and an anomalously small portion of electron contribution to the total thermal conductivity is observed for this metallic phase. The results agree well with experimental measurements and provide detailed mode-by-mode thermal conductivity contribution from different phonon modes. This study can provide useful information for integrating NbSe2 in nanodevices where both electrical and thermal properties are critical, showing great potential for integrating monolayer NbSe2 to thermoelectric devices.
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Affiliation(s)
- René Contreras
- Facultad de Ingeniería, Departamento de Tecnologías Industriales, Universidad de Talca, Camino Los Niches Km 1, Curicó 3340000, Chile
| | - Diego Celentano
- Departamento de Ingeniería Mecánica y Metalúrgica, Centro de Investigación en Nanotecnología y Materiales Avanzados (CIEN-UC), Millennium Institute on Green Ammonia as Energy Vector (MIGA), Pontificia Universidad Católica de Chile, Av. Vicuña Mackenna 4860, Macúl, Santiago 8331150, Chile
| | - Tengfei Luo
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
- Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Zeyu Liu
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - J. O. Morales-Ferreiro
- Facultad de Ingeniería, Departamento de Tecnologías Industriales, Universidad de Talca, Camino Los Niches Km 1, Curicó 3340000, Chile
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Yao J, Zhou Z, Li L, Chen Y, Wang C, Wang X, Lu Z, Bai Z, Zhang Q, Huangfu X, Sun Y, Xu H, Zou G. Zero-Dimensional Cs 3BiX 6 (X = Br, Cl) Single Crystal Films with Second Harmonic Generation. NANOSCALE RESEARCH LETTERS 2022; 17:115. [PMID: 36478063 PMCID: PMC9729671 DOI: 10.1186/s11671-022-03759-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/29/2022] [Accepted: 11/27/2022] [Indexed: 06/17/2023]
Abstract
The development of atomically thin single crystal films is necessary to potential applications in the 2D semiconductor field, and it is significant to explore new physical properties in low-dimensional semiconductors. Since, zero-dimensional (0D) materials without natural layering are connected by strong chemical bonds, it is challengeable to break symmetry and grow 0D Cs3BiX6 (X = Br, Cl) single crystal thin films. Here, we report the successful growth of 0D Cs3BiX6 (X = Br, Cl) single crystal films using a solvent evaporation crystallization strategy. Their phases and structures are both well evaluated to confirm 0D Cs3BiX6 (X = Br, Cl) single crystal films. Remarkably, the chemical potential dependent morphology evolution phenomenon is observed. It gives rise to morphology changes of Cs3BiBr6 films from rhombus to hexagon as BiBr3 concentration increased. Additionally, the robust second harmonic generation signal is detected in the Cs3BiBr6 single crystal film, demonstrating the broken symmetry originated from decreased dimension or shape change.
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Affiliation(s)
- Junjie Yao
- School of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, People's Republic of China
| | - Zhicheng Zhou
- School of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Lutao Li
- School of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Yuan Chen
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, People's Republic of China.
| | - Chen Wang
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, People's Republic of China
| | - Xiangyi Wang
- School of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Zheng Lu
- School of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Zhongchao Bai
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, People's Republic of China
| | - Qiang Zhang
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, People's Republic of China
| | - Xuefeng Huangfu
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Yinghui Sun
- School of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Hao Xu
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, People's Republic of China
| | - Guifu Zou
- School of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China.
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Xie H, Geng S, Shao J, Luo G, Liu Q, Wang J, Chen Y, Chu PK, Li Z, Yu XF. Niobium Diselenide Nanosheets: An Emerging Biodegradable Nanoplatform for Efficient Cancer Phototheranostics in the NIR-II Window. Adv Healthc Mater 2022; 11:e2202126. [PMID: 36165220 DOI: 10.1002/adhm.202202126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/23/2022] [Revised: 09/13/2022] [Indexed: 01/28/2023]
Abstract
As a prominent class of 2D transition metal dichalcogenides (TMDCs), niobium diselenide nanosheets (NbSe2 NSs) have garnered tremendous interest on account of promising applications pertaining to optoelectronics and energy storage. Although NbSe2 NSs have many unique advantages such as inherent biocompatibility and broad absorption in the NIR region, their biomedical applications have rarely been reported, especially as therapeutic agents for the second near-infrared (NIR-II) range. Herein, a biodegradable nanotherapeutic platform consisting of NbSe2 NSs is designed and demonstrated for NIR-II light-triggered photothermal therapy. NbSe2 NSs synthesized by grinding and liquid exfoliation exhibit superior photothermal conversion efficiency (48.3%) and remarkable photothermal stability in the NIR-II region. In vitro assessment demonstrates that NbSe2 NSs have favorable photothermal cell ablation efficiency and biocompatibility. After intravenous injection in vivo, the NbSe2 NSs accumulate passively in tumor sites to facilitate fluorescence imaging and tumor ablation by NIR-II illumination. Furthermore, as a result of gradual degradation in the physiological environment, NbSe2 NSs can be excreted from the body to avoid potential toxicity caused by long-term retention in vivo. The results reveal a promising NIR-II light-triggered PTT strategy with the aid of NbSe2 NSs and the platform is expected to have large potential in cancer theranostics.
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Affiliation(s)
- Hanhan Xie
- Shenzhen Key Laboratory of Biomimetic Robotics and Intelligent Systems, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Shengyong Geng
- Materials and Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Jundong Shao
- Materials and Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- School of Biomedical Engineering, Guangzhou Medical University, Guangzhou, 510182, P. R. China
| | - Guanghong Luo
- Department of Medical Laboratory, Shenzhen People's Hospital (The Second Clinical Medical College, Jinan University, The First Affiliated Hospital, Southern University of Science and Technology), Shenzhen, 518020, P. R. China
| | - Qian Liu
- Materials and Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Jiahong Wang
- Materials and Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Yue Chen
- Department of Medical Laboratory, Shenzhen People's Hospital (The Second Clinical Medical College, Jinan University, The First Affiliated Hospital, Southern University of Science and Technology), Shenzhen, 518020, P. R. China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, P. R. China
| | - Zhibin Li
- Department of Burn and Plastic Surgery, Shenzhen Institute of Translational Medicine, The First Affiliated Hospital of Shenzhen University, Shenzhen Second People's Hospital, Shenzhen, 518035, P. R. China
| | - Xue-Feng Yu
- Materials and Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
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36
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Liu X, Liu J, Fang M, Wei Y, Su Y, Chen Y, Peng G, Cai W, Luo W, Deng C, Zhang X. Energy Dissipation and Electrical Breakdown in Multilayer PtSe 2 Electronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51122-51129. [PMID: 36331247 DOI: 10.1021/acsami.2c15252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Investigating the energy dissipation in micro- and nanoscale is fundamental to improve the performance and reliability of two-dimensional (2D) electronics. Recently, 2D platinum selenide (PtSe2) has drawn extensive attention in developing next-generation functional devices due to its distinctive fusion of versatile properties. Toward practical applications of PtSe2 devices, it is essential to understand the interfacial thermal properties between PtSe2 and its substrate. Among them, the thermal boundary conductance (TBC) has played a critical role for out-of-plane heat dissipation of PtSe2 devices. Here, we identify the energy dissipation behavior of multilayer PtSe2 devices and extract the actual TBC value of the PtSe2/SiO2 interface by Raman thermometry with electrical bias. The obtained TBC value is about 8.6 MW m-2 K-1, and it belongs to the low end of as-known solid-solid interfaces, suggesting possible applications regarding thermoelectric devices or others reliant on a large temperature gradient. Furthermore, the maximum current density of the PtSe2 device determines its threshold power, which is crucial for improving device design and guiding future applications. Therefore, we explore the electrical breakdown profile of the multilayer PtSe2 device, revealing the breakdown current density of 17.7 MA cm-2 and threshold power density of 0.2 MW cm-2, which are larger than typical values for commonly used aluminum and copper. These results provide key insights into the energy dissipation of PtSe2 devices and make PtSe2 an excellent candidate for thermal confinement applications and nanometer-thin interconnects, which will benefit the development of energy-efficient functional 2D devices.
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Affiliation(s)
- Xiao Liu
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Jinxin Liu
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Mengke Fang
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Yuehua Wei
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha410073, China
| | - Yue Su
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Yangbo Chen
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
| | - Gang Peng
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Weiwei Cai
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang332105, China
| | - Wei Luo
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Chuyun Deng
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Xueao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang332105, China
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37
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Sim Y, Chae Y, Kwon SY. Recent advances in metallic transition metal dichalcogenides as electrocatalysts for hydrogen evolution reaction. iScience 2022; 25:105098. [PMID: 36157572 PMCID: PMC9490594 DOI: 10.1016/j.isci.2022.105098] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Abstract
Layered metallic transition metal dichalcogenides (MTMDs) exhibit distinctive electrical and catalytic properties to drive basal plane activity, and, therefore, they have emerged as promising alternative electrocatalysts for sustainable hydrogen evolution reactions (HERs). A key challenge for realizing MTMDs-based electrocatalysts is the controllable and scalable synthesis of high-quality MTMDs and the development of engineering strategies that allow tuning their electronic structures. However, the lack of a method for the direct synthesis of MTMDs retaining the structural stability limits optimizing the structural design for the next generation of robust electrocatalysts. In this review, we highlight recent advances in the synthesis of MTMDs comprising groups VB and VIB and various routes for structural engineering to enhance the HER catalytic performance. Furthermore, we provide insight into the potential future directions and the development of MTMDs with high durability as electrocatalysts to generate green hydrogen through water-splitting technology.
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Affiliation(s)
- Yeoseon Sim
- Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Yujin Chae
- Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Soon-Yong Kwon
- Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
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Zhou C, Yuan S, Zhao W, Guo W, Ren H. Improved nitrogen reduction activity of NbSe 2 tuned by edge chirality. RSC Adv 2022; 12:22131-22138. [PMID: 36043109 PMCID: PMC9364079 DOI: 10.1039/d2ra03464f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/04/2022] [Accepted: 08/01/2022] [Indexed: 11/21/2022] Open
Abstract
Efficient catalysts for the electroreduction of N2 to NH3 are of paramount importance for sustainable ammonia production. Recently, it was reported that NbSe2 nanosheets exhibit an excellent catalytic activity for nitrogen reduction under ambient conditions. However, existing theoretical calculations suggested an overpotential over 3.0 V, which is too high to interpret the experimental observations. To reveal the underlying mechanism of the high catalytic activity, in this work, we assessed NbSe2 edges with different chirality and Se vacancies by using first principles calculations. Our results show that N2 can be efficiently reduced to NH3 on a pristine zigzag edge via the enzymatic pathway with an overpotential of 0.45 V. Electronic structure analysis demonstrates that the N2 molecule is activated by the back-donation mechanism. The efficient tuning of the local chemical environments by edge chirality provides a promising approach for catalyst design.
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Affiliation(s)
- Chen Zhou
- School of Materials Science and Engineering, China University of Petroleum (East China) Qingdao 266580 Shandong China
| | - Saifei Yuan
- School of Materials Science and Engineering, China University of Petroleum (East China) Qingdao 266580 Shandong China
| | - Wen Zhao
- School of Materials Science and Engineering, China University of Petroleum (East China) Qingdao 266580 Shandong China
| | - Wenyue Guo
- School of Materials Science and Engineering, China University of Petroleum (East China) Qingdao 266580 Shandong China
| | - Hao Ren
- School of Materials Science and Engineering, China University of Petroleum (East China) Qingdao 266580 Shandong China
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Zou X, Sun Y, Wang C. Horizontally Self-Standing Growth of Bi 2 O 2 Se Achieving Optimal Optoelectric Properties. SMALL METHODS 2022; 6:e2200347. [PMID: 35676223 DOI: 10.1002/smtd.202200347] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2022] [Revised: 05/10/2022] [Indexed: 06/15/2023]
Abstract
Air-stable 2D Bi2 O2 Se material with high carrier mobility appears as a promising semiconductor platform for future micro/nanoelectronics and optoelectronics. Like most 2D materials, Bi2 O2 Se 2D nanostructures normally form on atomically flat mica substrates, in which undesirable defects and structural damage from the subsequent transfer process will largely degrade their photoelectronic performance. Here, a new synthesis route involving successive kinetic and thermodynamic processes is proposed to achieve horizontally self-standing Bi2 O2 Se nanostructures on SiO2 /Si substrates. Fewer defects and avoidance of transfer procedure involving corrosive solvents ensure the integrity of the intrinsic lattice and band structures in Bi2 O2 Se nanostructures. In contrast to flat structures grown on mica, it displays reduced dark current and improved photoresponse performance (on-off ratio, photoresponsivity, response time, and detectivity). These results indicate a new potential in high-quality 2D electronic nanostructures with optimal optoelectronic functionality.
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Affiliation(s)
- Xiaobin Zou
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| | - Yong Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| | - Chengxin Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
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40
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Ren Y, Zhang L, Zhu X, Li H, Dong Q, Liu S. Synthesis of transition metal dichalcogenide van der Waals heterostructures through chemical vapor deposition. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:254002. [PMID: 35358958 DOI: 10.1088/1361-648x/ac6309] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2021] [Accepted: 03/31/2022] [Indexed: 06/14/2023]
Abstract
Transition metal dichalcogenide (TMD) van der Waals (vdW) heterostructures show great potential in the exploration of novel physical phenomena and practical applications. Compared to the traditional mechanical stacking techniques, chemical vapor deposition (CVD) method exhibits more advantages in preparing TMD vdW heterostructures. CVD enables the large-scale production of high-quality materials with clean interfaces in the future. Herein, CVD methods for the synthesis of TMD vdW heterostructures are summarized. These methods are categorized in two major strategies, multi-step process and one-step process. The effects of various factors are demonstrated, including the temperature, nucleation, and precursors. Finally, the remaining challenges are discussed.
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Affiliation(s)
- Yizhang Ren
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ling Zhang
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Xukun Zhu
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Huimin Li
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Qizhi Dong
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
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41
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Wang P, Yang Y, Pan E, Liu F, Ajayan PM, Zhou J, Liu Z. Emerging Phases of Layered Metal Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105215. [PMID: 34923740 DOI: 10.1002/smll.202105215] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2021] [Revised: 11/10/2021] [Indexed: 06/14/2023]
Abstract
Layered metal chalcogenides, as a "rich" family of 2D materials, have attracted increasing research interest due to the abundant choices of materials with diverse structures and rich electronic characteristics. Although the common metal chalcogenide phases such as 2H and 1T have been intensively studied, many other unusual phases are rarely explored, and some of these show fascinating behaviors including superconductivity, ferroelectrics, ferromagnetism, etc. From this perspective, the unusual phases of metal chalcogenides and their characteristics, as well as potential applications are introduced. First, the unusual phases of metal chalcogenides from different classes, including transition metal dichalcogenides, magnetic element-based chalcogenides, and metal phosphorus chalcogenides, are discussed, respectively. Meanwhile, their excellent properties of different unusual phases are introduced. Then, the methods for producing the unusual phases are discussed, specifically, the stabilization strategies during the chemical vapor deposition process for the unusual phase growth are discussed, followed by an outlook and discussions on how to prepare the unusual phase metal dichalcogenides in terms of synthetic methodology and potential applications.
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Affiliation(s)
- Ping Wang
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics, and Ultrafine Optoelectronic Systems, and School of Physics, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Yang Yang
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics, and Ultrafine Optoelectronic Systems, and School of Physics, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313099, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313099, China
| | - Pulickel M Ajayan
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Jiadong Zhou
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics, and Ultrafine Optoelectronic Systems, and School of Physics, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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42
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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43
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Yang R, Mei L, Zhang Q, Fan Y, Shin HS, Voiry D, Zeng Z. High-yield production of mono- or few-layer transition metal dichalcogenide nanosheets by an electrochemical lithium ion intercalation-based exfoliation method. Nat Protoc 2022; 17:358-377. [PMID: 35022618 DOI: 10.1038/s41596-021-00643-w] [Citation(s) in RCA: 60] [Impact Index Per Article: 30.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Accepted: 10/04/2021] [Indexed: 11/09/2022]
Abstract
Transition metal dichalcogenide (TMD) nanomaterials, especially the mono- or few-layer ones, have received extensive research interest owing to their versatile properties, ranging from true metals (e.g., NbS2 and VSe2) and semimetals (e.g., WTe2 and TiSe2) to semiconductors (e.g., MoS2 and We2) and insulators (e.g., HfS2). Therefore, the reliable production of these nanomaterials with atomically thin thickness and laterally uniform dimension is essential for their promising applications in transistors, photodetectors, electroluminescent devices, catalysis, energy conversion, environment remediation, biosensing, bioimaging, and so on. Recently, the electrochemical lithium ion intercalation-based exfoliation method has emerged as a mature, efficient and promising strategy for the high-yield production of mono- or few-layer TMD nanosheets; monolayer MoS2 (yield of 92%), monolayer TaS2 (yield of 93%) and bilayer TiS2 (yield of 93%) with lateral dimensions of ~1 µm (refs. 1-3). This Protocol describes the details of experimental procedures for the high-yield synthesis of mono- or few-layer TMDs and other inorganic nanosheets such as MoS2, WS2, TiS2, TaS2, ZrS2, graphene, h-BN, NbSe2, WSe2, Sb2Se3 and Bi2Te3 by using the electrochemical lithium ion intercalation-based exfoliation method, which involves the electrochemical intercalation of lithium ions into layered inorganic crystals and a mild sonication process. The whole protocol takes 26-38 h for the successful production of ultrathin inorganic nanosheets.
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Affiliation(s)
- Ruijie Yang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Liang Mei
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Qingyong Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Yingying Fan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Hyeon Suk Shin
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, South Korea.
| | - Damien Voiry
- Institut Européen des Membranes, IEM, UMR 5635, Université Montpellier, ENSCM, CNRS, Montpellier, France.
| | - Zhiyuan Zeng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, P. R. China.
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44
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Karmodak N, Bursi L, Andreussi O. Oxygen Evolution and Reduction on Two-Dimensional Transition Metal Dichalcogenides. J Phys Chem Lett 2022; 13:58-65. [PMID: 34958230 DOI: 10.1021/acs.jpclett.1c03431] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Motivated by the need to find good electrocatalysts for water oxidation and O2 reduction, composed of nontoxic and earth-abundant elements, a systematic screening of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is performed. To identify compounds that are intrinsically active and can fully take advantage of the high surface area of 2D catalysts, this study focuses on the properties of the ideal basal planes of 2D TMDCs, in the 2H, 1T, and 1T' phases. Over two hundred materials proposed in computational databases are studied by means of first-principles-based simulations coupled with continuum embedding models to account for the presence of electrochemical environments. The best candidates with overpotentials for the oxygen evolution and reduction reactions (OER and ORR) lower than 0.5 V under acidic conditions and higher stability against degradation in electrochemical environments are selected. For OER, the designed workflow identifies one active and thermodynamically stable material, and seven materials that are metastable at the oxidative potentials and acidic pH. On the other hand, for ORR, we identify 20 materials with overpotentials less than 0.5 V. Among these compounds, six bifunctional materials have been experimentally reported, with 1T-NbTe2 and 1T'-MoTe2 being the best performing catalysts for OER and ORR, respectively.
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Affiliation(s)
- Naiwrit Karmodak
- Department of Physics, University of North Texas, Denton, Texas 76 203, United States
| | - Luca Bursi
- Department of Physics, University of North Texas, Denton, Texas 76 203, United States
| | - Oliviero Andreussi
- Department of Physics, University of North Texas, Denton, Texas 76 203, United States
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45
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Ma H, Qian Q, Qin B, Wan Z, Wu R, Zhao B, Zhang H, Zhang Z, Li J, Zhang Z, Li B, Wang L, Duan X. Controlled Synthesis of Ultrathin PtSe 2 Nanosheets with Thickness-Tunable Electrical and Magnetoelectrical Properties. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103507. [PMID: 34713628 PMCID: PMC8728827 DOI: 10.1002/advs.202103507] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/14/2021] [Revised: 09/23/2021] [Indexed: 06/13/2023]
Abstract
Thickness-dependent chemical and physical properties have gained tremendous interest since the emergence of two-dimensional (2D) materials. Despite attractive prospects, the thickness-controlled synthesis of ultrathin nanosheets remains an outstanding challenge. Here, a chemical vapor deposition (CVD) route is reported to controllably synthesize high-quality PtSe2 nanosheets with tunable thickness and explore their thickness-dependent electronic and magnetotransport properties. Raman spectroscopic studies demonstrate all Eg , A1 g , A2 u , and Eu modes are red shift in thicker nanosheets. Electrical measurements demonstrate the 1.7 nm thick nanosheet is a semiconductor with room temperature field-effect mobility of 66 cm2 V-1 s-1 and on/off ratio of 106 . The 2.3-3.8 nm thick nanosheets show slightly gated modulation with high field-effect mobility up to 324 cm2 V-1 s-1 at room-temperature. When the thickness is over 3.8 nm, the nanosheets show metallic behavior with conductivity and breakdown current density up to 6.8 × 105 S m-1 and 6.9 × 107 A cm-2 , respectively. Interestingly, magnetoresistance (MR) studies reveal magnetic orders exist in this intrinsically non-magnetic material system, as manifested by the thickness-dependent Kondo effect, where both metal to insulator transition and negative MR appear upon cooling. Together, these studies suggest that PtSe2 is an intriguing system for both developing novel functional electronics and conducting fundamental 2D magnetism study.
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Affiliation(s)
- Huifang Ma
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211800, China
| | - Qi Qian
- Department of Chemistry and Biochemistry, University of California, Los Angeles, California, 90095, United States
| | - Biao Qin
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhong Wan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, California, 90095, United States
| | - Ruixia Wu
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Hongmei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Zucheng Zhang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Bo Li
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Lin Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211800, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
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Ago H, Okada S, Miyata Y, Matsuda K, Koshino M, Ueno K, Nagashio K. Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2022; 23:275-299. [PMID: 35557511 PMCID: PMC9090349 DOI: 10.1080/14686996.2022.2062576] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2022] [Revised: 03/29/2022] [Accepted: 03/30/2022] [Indexed: 05/22/2023]
Abstract
The past decades of materials science discoveries are the basis of our present society - from the foundation of semiconductor devices to the recent development of internet of things (IoT) technologies. These materials science developments have depended mainly on control of rigid chemical bonds, such as covalent and ionic bonds, in organic molecules and polymers, inorganic crystals and thin films. The recent discovery of graphene and other two-dimensional (2D) materials offers a novel approach to synthesizing materials by controlling their weak out-of-plane van der Waals (vdW) interactions. Artificial stacks of different types of 2D materials are a novel concept in materials synthesis, with the stacks not limited by rigid chemical bonds nor by lattice constants. This offers plenty of opportunities to explore new physics, chemistry, and engineering. An often-overlooked characteristic of vdW stacks is the well-defined 2D nanospace between the layers, which provides unique physical phenomena and a rich field for synthesis of novel materials. Applying the science of intercalation compounds to 2D materials provides new insights and expectations about the use of the vdW nanospace. We call this nascent field of science '2.5 dimensional (2.5D) materials,' to acknowledge the important extra degree of freedom beyond 2D materials. 2.5D materials not only offer a new field of scientific research, but also contribute to the development of practical applications, and will lead to future social innovation. In this paper, we introduce the new scientific concept of this science of '2.5D materials' and review recent research developments based on this new scientific concept.
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Affiliation(s)
- Hiroki Ago
- Global Innovation Center, Kyushu University, Fukuoka, Japan
- CONTACT Hiroki Ago Global Innovation Center, Kyushu University, Fukuoka816-8580, Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Japan
| | | | | | - Kosei Ueno
- Department of Chemistry, Faculty of Science, Hokkaido University, Hokkaido, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, University of Tokyo, Tokyo, Japan
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47
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Abstract
Due to unprecedented application prospects such as high-density and low-power multistate storage, spintronics and nanoelectronics, two-dimensional (2D) multiferroics, coupled with at least two ferroic orders, have gotten a lot of interest in recent years. Multiple functions can be achieved in 2D multiferroics via coupling phenomena such as magnetoelectricity, piezoelectricity, and magnetoelasticity, which offers technical support for the creation of multifunctional devices. The research progress of 2D ferromagnetic-ferroelectric multiferroic materials, ferroelectric-ferroelastic multiferroic materials, and ferromagnetic-ferroelastic materials in recent years is reviewed in this paper. The categorization of 2D multiferroics is explored in terms of the multiple sources of ferroelectricity. The top-down approaches and the bottom-up methods used to fabricate 2D multiferroics materials are introduced. Finally, the authors outline potential research prospects and application scenarios for 2D multiferroic materials.
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Affiliation(s)
- Yunye Gao
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, Australian Capital Territory 2601, Australia.
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, Australian Capital Territory 2601, Australia.
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, Australian Capital Territory 2601, Australia.
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48
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Raychaudhuri P, Dutta S. Phase fluctuations in conventional superconductors. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:083001. [PMID: 34731851 DOI: 10.1088/1361-648x/ac360b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2021] [Accepted: 11/03/2021] [Indexed: 06/13/2023]
Abstract
Within the Bardeen-Cooper-Schrieffer (BCS) theory, superconductivity is entirely governed by the pairing energy scale, which gives rise to the superconducting energy gap, Δ. However, another important energy scale, the superfluid phase stiffness,J, which determines the resilience of the superconductor to phase-fluctuations is normally ignored. The spectacular success of BCS theory owes to the fact that in conventional superconductorsJis normally several orders of magnitude larger than Δ and thus an irrelevant energy scale. However, in certain situations such as in the presence of low carrier density, strong disorder, at low-dimensions or in granular superconductors,Jcan drastically come down and even become smaller than Δ. In such situations, the temperature and magnetic field evolution of superconducting properties is governed by phase fluctuations, which gives rise to novel electronic states where signatures of electronic pairing continue to exist even when the zero resistance state is destroyed. In this article, we will review the recent experimental developments on the study of phase fluctuations in conventional superconductors.
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Affiliation(s)
- Pratap Raychaudhuri
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005, India
| | - Surajit Dutta
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005, India
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49
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Wang Z, Cheon CY, Tripathi M, Marega GM, Zhao Y, Ji HG, Macha M, Radenovic A, Kis A. Superconducting 2D NbS 2 Grown Epitaxially by Chemical Vapor Deposition. ACS NANO 2021; 15:18403-18410. [PMID: 34756018 PMCID: PMC8614232 DOI: 10.1021/acsnano.1c07956] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/10/2021] [Accepted: 11/03/2021] [Indexed: 06/13/2023]
Abstract
Metallic two-dimensional (2D) transition metal dichalcogenides (TMDCs) are attracting great attention because of their interesting low-temperature properties such as superconductivity, magnetism, and charge density waves (CDW). However, further studies and practical applications are being slowed down by difficulties in synthesizing high-quality materials with a large grain size and well-determined thickness. In this work, we demonstrate epitaxial chemical vapor deposition (CVD) growth of 2D NbS2 crystals on a sapphire substrate, with a thickness-dependent structural phase transition. NbS2 crystals are epitaxially aligned by the underlying c-plane sapphire resulting in high-quality growth. The thickness of NbS2 is well controlled by growth parameters to be between 1.5 and 10 nm with a large grain size of up to 500 μm. As the thickness increases, we observe in our NbS2 a transition from a metallic 3R-polytype to a superconducting 2H-polytype, confirmed by Raman spectroscopy, aberration-corrected scanning transmission electron microscopy (STEM) and electrical transport measurements. A Berezinskii-Kosterlitz-Thouless (BKT) superconducting transition occurs in the CVD-grown 2H-phase NbS2 below the transition temperature (Tc) of 3 K. Our work demonstrates thickness and phase-controllable synthesis of high-quality superconducting 2D NbS2, which is imperative for its practical applications in next-generation TMDC-based electrical devices.
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Affiliation(s)
- Zhenyu Wang
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Cheol-Yeon Cheon
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Mukesh Tripathi
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Guilherme Migliato Marega
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Yanfei Zhao
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Hyun Goo Ji
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Michal Macha
- Institute
of Bioengineering, École Polytechnique
Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Aleksandra Radenovic
- Institute
of Bioengineering, École Polytechnique
Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Andras Kis
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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50
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Abstract
Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.
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Affiliation(s)
- Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
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