1
|
Ren B, Zhang D, Qiu X, Ding Y, Zhang Q, Fu Y, Liao JF, Poddar S, Chan CLJ, Cao B, Wang C, Zhou Y, Kuang DB, Zeng H, Fan Z. Full-color fiber light-emitting diodes based on perovskite quantum wires. SCIENCE ADVANCES 2024; 10:eadn1095. [PMID: 38748790 PMCID: PMC11095450 DOI: 10.1126/sciadv.adn1095] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 04/11/2024] [Indexed: 05/19/2024]
Abstract
Fiber light-emitting diodes (Fi-LEDs), which can be used for wearable lighting and display devices, are one of the key components for fiber/textile electronics. However, there exist a number of impediments to overcome on device fabrication with fiber-like substrates, as well as on device encapsulations. Here, we uniformly grew all-inorganic perovskite quantum wire arrays by filling high-density alumina nanopores on the surface of Al fibers with a dip-coating process. With a two-step evaporation method to coat a surrounding transporting layer and semitransparent electrode, we successfully fabricated full-color Fi-LEDs with emission peaks at 625 nanometers (red), 512 nanometers (green), and 490 nanometers (sky-blue), respectively. Intriguingly, additional polydimethylsiloxane packaging helps instill the mechanical bendability, stretchability, and waterproof feature of Fi-LEDs. The plasticity of Al fiber also allows the one-dimensional architecture Fi-LED to be shaped and constructed for two-dimensional or even three-dimensional architectures, opening up a new vista for advanced lighting with unconventional formfactors.
Collapse
Affiliation(s)
- Beitao Ren
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Daquan Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Xiao Qiu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yucheng Ding
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Qianpeng Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yu Fu
- School of Advanced Energy, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, P. R. China
| | - Jin-Feng Liao
- MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Swapnadeep Poddar
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Chak Lam Jonathan Chan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Bryan Cao
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Chen Wang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yu Zhou
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Dai-Bin Kuang
- MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| |
Collapse
|
2
|
Rahimi S, Eskandari M, Fathi D. New nanostructure perovskite-based light-emitting diode with superior light extraction efficiency enhancement. Sci Rep 2024; 14:5500. [PMID: 38448629 PMCID: PMC10918065 DOI: 10.1038/s41598-024-55951-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Accepted: 02/29/2024] [Indexed: 03/08/2024] Open
Abstract
The external quantum efficiency (EQE) of a perovskite-based light-emitting diode (PELED) is a key indicator, comprising the internal quantum efficiency (IQE) and light extraction efficiency (LEE). Currently, enhancing EQE faces a major challenge in optimizing LEE. This study introduces an innovative structure to boost LEE, exploring various influencing parameters. The transition from a planar to a domical architecture leverages factors like the waveguiding effect, resulting in a remarkable tenfold increase in LEE, from 6 to 59%. Additionally, investigations into factors affecting LEE, such as altering dipole orientation, material-substrate contact angle, and layer thickness, reveal the potential for further improvement. The optimized structure attains an impressive LEE value of 74%.
Collapse
Affiliation(s)
- Saeed Rahimi
- Department of Electrical and Computer Engineering, Tarbiat Modares University (TMU), Tehran, Iran
| | - Mehdi Eskandari
- Nanomaterial Research Group, Academic Center for Education, Culture & Research (ACECR) on TMU, Tehran, Iran
| | - Davood Fathi
- Department of Electrical and Computer Engineering, Tarbiat Modares University (TMU), Tehran, Iran.
| |
Collapse
|
3
|
Zhang J, Qian D, Hu H, Wang K, Cao Y, Song Q, Yao J, Su X, Zhou L, Zhang S, Wang T, Rong Y, Liu C, Mao L, Ding T, Yi J, Zhang YJ, Li JF, Wang N, Wang J, Liu X. Enhancing Light Out-coupling in Perovskite Light-Emitting Diodes through Plasmonic Nanostructures. NANO LETTERS 2024; 24:2681-2688. [PMID: 38408023 DOI: 10.1021/acs.nanolett.3c03483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
Perovskite light-emitting diodes (PeLEDs) have emerged as promising candidates for lighting and display technologies owing to their high photoluminescence quantum efficiency and high carrier mobility. However, the performance of planar PeLEDs is limited by the out-coupling efficiency, predominantly governed by photonic losses at device interfaces. Most notably, the plasmonic loss at the metal electrode interfaces can account for up to 60% of the total loss. Here, we investigate the use of plasmonic nanostructures to improve the light out-coupling in PeLEDs. By integrating these nanostructures with PeLEDs, we have demonstrated an effectively reduced plasmonic loss and enhanced light out-coupling. As a result, the nanostructured PeLEDs exhibit an average 1.5-fold increase in external quantum efficiency and an ∼20-fold improvement in device lifetime. This finding offers a generic approach for enhancing light out-coupling, promising great potential to go beyond existing performance limitations.
Collapse
Affiliation(s)
- Jing Zhang
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Dongmin Qian
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Huatian Hu
- Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, China
- Istituto Italiano di Tecnologia, Center for Biomolecular Nanotechnologies, Via Barsanti 14, 73010 Arnesano, Italy
| | - Kun Wang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM College of Chemistry and Chemical Engineering, College of Energy, Xiamen University, Xiamen 361005, China
| | - Yu Cao
- Strait Laboratory of Flexible Electronics (SLoFE), Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou 350117, China
| | - Qianshan Song
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jiacheng Yao
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Xi Su
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Li Zhou
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Shunping Zhang
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, P. R. China
| | - Ti Wang
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Yaoguang Rong
- School of Chemistry, Chemical Engineering and life Sciences, Wuhan University of Technology, Wuhan 430070, Hubei, P. R. China
| | - Chang Liu
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Li Mao
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Tao Ding
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jun Yi
- School of Electronic Science and Engineering, Fujian Key Laboratory of Ultrafast Laser Technology and Applications, Xiamen University, Xiamen 361005, China
| | - Yue-Jiao Zhang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM College of Chemistry and Chemical Engineering, College of Energy, Xiamen University, Xiamen 361005, China
| | - Jian-Feng Li
- State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM College of Chemistry and Chemical Engineering, College of Energy, Xiamen University, Xiamen 361005, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Xiaoze Liu
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, P. R. China
- Wuhan University Shenzhen Research Institute, Shenzhen 518057, China
| |
Collapse
|
4
|
Cheng M, Jiang J, Yan C, Lin Y, Mortazavi M, Kaul AB, Jiang Q. Progress and Application of Halide Perovskite Materials for Solar Cells and Light Emitting Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:391. [PMID: 38470722 PMCID: PMC10933891 DOI: 10.3390/nano14050391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 02/14/2024] [Accepted: 02/16/2024] [Indexed: 03/14/2024]
Abstract
Halide perovskite materials have attracted worldwide attention in the photovoltaic area due to the rapid improvement in efficiency, from less than 4% in 2009 to 26.1% in 2023 with only a nanometer lever photo-active layer. Meanwhile, this nova star found applications in many other areas, such as light emitting, sensor, etc. This review started with the fundamentals of physics and chemistry behind the excellent performance of halide perovskite materials for photovoltaic/light emitting and the methods for preparing them. Then, it described the basic principles for solar cells and light emitting devices. It summarized the strategies including nanotechnology to improve the performance and the application of halide perovskite materials in these two areas: from structure-property relation to how each component in the devices affects the overall performance. Moreover, this review listed the challenges for the future applications of halide perovskite materials.
Collapse
Affiliation(s)
- Maoding Cheng
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| | - Jingtian Jiang
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Chao Yan
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Yuankun Lin
- Department of Physics, University of North Texas, Denton, TX 76203, USA
| | - Mansour Mortazavi
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| | - Anupama B Kaul
- Department of Electrical Engineering, University of North Texas, Denton, TX 76207, USA
| | - Qinglong Jiang
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| |
Collapse
|
5
|
Liu H, Shi G, Khan R, Chu S, Huang Z, Shi T, Sun H, Li Y, Zhou H, Xiao P, Chen T, Xiao Z. Large-Area Flexible Perovskite Light-Emitting Diodes Enabled by Inkjet Printing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309921. [PMID: 38016083 DOI: 10.1002/adma.202309921] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 11/14/2023] [Indexed: 11/30/2023]
Abstract
Metal halide perovskite light-emitting diodes (PeLEDs) are attracting increasing attention due to their potential applications in flat panel lighting and displays. The solution process, large-area fabrication, and flexibility are attractive properties of PeLEDs over traditional inorganic LEDs. However, it is still very challenging to deposit uniform perovskite films on flexible substrates using a blade or slot-die coating, as the flexible substrate is not perfectly flat. Here, the inkjet printing technique is adopted, and the key challenges are overcome step-by-step in preparing large-area films on flexible substrates. Double-hole transporting layers are first used and a wetting interfacial layer to improve the surface wettability so that the printed perovskite droplets can form a continuous wet film. The fluidic and evaporation dynamics of the perovskite wet layer is manipulated to suppress the coffee ring effect by solvent engineering. Uniform perovskite films are obtained finally on flexible substrates with different perovskite compositions. The peak external quantum efficiency of the inkjet-printed PeLEDs reaches 14.3%. Large-area flexible PeLEDs (4 × 7 cm2 ) also show very uniform emission. This work represents a significant step toward real applications of large-area PeLEDs in flexible flat-panel lighting.
Collapse
Affiliation(s)
- Hui Liu
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Guangyi Shi
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Rashid Khan
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Shenglong Chu
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zongming Huang
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Tongfei Shi
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui, 230031, China
| | - Haiding Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Yaping Li
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Hongmin Zhou
- Instruments Center for Physical Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Peng Xiao
- Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Tao Chen
- Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zhengguo Xiao
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| |
Collapse
|
6
|
Song Z, Chen D, Yu B, Liu G, Li H, Wei Y, Wang S, Meng L, Dang Y. Thermal/Water-Induced Phase Transformation and Photoluminescence of Hybrid Manganese(II)-Based Chloride Single Crystals. Inorg Chem 2023; 62:17931-17939. [PMID: 37831425 DOI: 10.1021/acs.inorgchem.3c02823] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Mn(II)-based hybrid halides have attracted great attention from the optoelectronic fields due to their nontoxicity, special luminescent properties, and structural diversity. Here, two novel organic-inorganic hybrid Mn(II)-based halide single crystals (1-mpip)MnCl4·3H2O and (1-mpip)2MnCl6 (1-mpip = 1-methylpiperazinium, C5H14N2+) were grown by a slow evaporation method in ambient atmosphere. Interestingly, (1-mpip)2MnCl6 single crystals exhibit the green emission with a PL peak at 522 nm and photoluminescence quantum yields (PLQYs) of ≈5.4%, whereas (1-mpip)MnCl4·3H2O single crystals exhibit no emission characteristics. More importantly, there exists a thermal-induced phase transformation from (1-mpip)MnCl4·3H2O to emissive (1-mpip)2MnCl6 at 372 K. Moreover, a reversible luminescent conversion between (1-mpip)MnCl4·3H2O and (1-mpip)2MnCl6 was simply achieved when heated to 383 K and placed in a humid environment or sprayed with water. This work not only deepens the understanding of the thermal-induced phase transformation and humidity-sensitive luminescent conversion of hybrid Mn(II)-based halides, but also provides a guidance for thermal and humidity sensing and anticounterfeiting applications of these hybrid materials.
Collapse
Affiliation(s)
- Zhexin Song
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, P. R. China
| | - Danping Chen
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, P. R. China
| | - Binyin Yu
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, P. R. China
| | - Guokui Liu
- School of Chemistry and Chemical Engineering, Linyi University, Linyi 276000, P. R. China
| | - Hongyu Li
- Materials Genome Institute, Shanghai University, Shanghai 200444, P. R. China
| | - Yaoyao Wei
- School of Chemistry and Chemical Engineering, Linyi University, Linyi 276000, P. R. China
| | - Shenghao Wang
- Materials Genome Institute, Shanghai University, Shanghai 200444, P. R. China
| | - Lingqiang Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
| | - Yangyang Dang
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, P. R. China
- State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| |
Collapse
|
7
|
Qin F, Lu M, Lu P, Sun S, Bai X, Zhang Y. Luminescence and Degeneration Mechanism of Perovskite Light-Emitting Diodes and Strategies for Improving Device Performance. SMALL METHODS 2023; 7:e2300434. [PMID: 37434048 DOI: 10.1002/smtd.202300434] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 06/17/2023] [Indexed: 07/13/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) can be a promising technology for next-generation display and lighting applications due to their excellent optoelectronic properties. However, a systematical overview of luminescence and degradation mechanism of perovskite materials and PeLEDs is lacking. Therefore, it is crucial to fully understand these mechanisms and further improve device performances. In this work, the fundamental photophysical processes of perovskite materials, electroluminescence mechanism of PeLEDs including carrier kinetics and efficiency roll-off as well as device degradation mechanism are discussed in detail. In addition, the strategies to improve device performances are summarized, including optimization of photoluminescence quantum yield, charge injection and recombination, and light outcoupling efficiency. It is hoped that this work can provide guidance for future development of PeLEDs and ultimately realize industrial applications.
Collapse
Affiliation(s)
- Feisong Qin
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| |
Collapse
|
8
|
Ghaithan HM, Qaid SMH, Alahmed ZA, Bawazir HS, Aldwayyan AS. Electronic Structure and Optical Properties of Inorganic Pm3m and Pnma CsPbX 3 (X = Cl, Br, I) Perovskite: A Theoretical Understanding from Density Functional Theory Calculations. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6232. [PMID: 37763509 PMCID: PMC10532767 DOI: 10.3390/ma16186232] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Revised: 08/19/2023] [Accepted: 08/29/2023] [Indexed: 09/29/2023]
Abstract
In this study, we investigated the optoelectronic properties of cubic (Pm3m) and orthorhombic (Pnma) CsPbX3 (X = I, Br, and Cl). We utilized the full potential linear augmented plane wave method, which is implemented in the WIEN2k code, to facilitate the investigation. Different exchange potentials were used to analyze the optoelectronic behavior using the available density functional theory methods. Our findings revealed that CsPbX3 perovskites display direct band gaps at the R and Г points for cubic (Pm3m) and orthorhombic (Pnma) structures, respectively. Among the exchange potentials, the mBJ-GGA method provided the most accurate results. These outcomes concurred with the experimental results. In both Pm3m and Pnma structures, interesting changes were observed when iodide (I) was replaced with bromine (Br) and then chlorine (Cl). The direct band gap at the R and Г points shifted to higher energy levels. Similarly, when I was replaced with Br and Cl, there was a noticeable decrease in the absorption coefficient, dielectric constants, refractive index, and reflectivity, in addition to a band gap shift to higher energy levels.
Collapse
Affiliation(s)
- Hamid M. Ghaithan
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia; (S.M.H.Q.); (Z.A.A.); (H.S.B.)
| | - Saif M. H. Qaid
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia; (S.M.H.Q.); (Z.A.A.); (H.S.B.)
| | - Zeyad A. Alahmed
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia; (S.M.H.Q.); (Z.A.A.); (H.S.B.)
| | - Huda S. Bawazir
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia; (S.M.H.Q.); (Z.A.A.); (H.S.B.)
| | - Abdullah S. Aldwayyan
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia; (S.M.H.Q.); (Z.A.A.); (H.S.B.)
- King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451, Saudi Arabia
| |
Collapse
|
9
|
Zhao B, Vasilopoulou M, Fakharuddin A, Gao F, Mohd Yusoff ARB, Friend RH, Di D. Light management for perovskite light-emitting diodes. NATURE NANOTECHNOLOGY 2023; 18:981-992. [PMID: 37653050 DOI: 10.1038/s41565-023-01482-4] [Citation(s) in RCA: 19] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Accepted: 07/07/2023] [Indexed: 09/02/2023]
Abstract
Perovskite light-emitting diodes (LEDs) have reached external quantum efficiencies of over 20% for various colours, showing great potential for display and lighting applications. Despite the internal quantum efficiencies of the best-performing devices already approaching unity, around 80% of the internally generated photons are trapped in the devices and lose energy through a variety of lossy channels. Significant opportunities for improving efficiency and maximizing photon extraction lie in the effective management of light. In this Review we analyse light management strategies based on the intrinsic optical properties of the perovskite materials and the extrinsic properties related to device structures. These approaches should allow the external quantum efficiencies of perovskite LEDs to substantially exceed the conventional limits of planar organic LED devices. By revisiting lessons learned from organic LEDs and perovskite solar cells, we highlight possible directions of future research towards perovskite LEDs with ultrahigh efficiencies.
Collapse
Affiliation(s)
- Baodan Zhao
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China
| | - Maria Vasilopoulou
- Institute of Nanoscience and Nanotechnology, National Center for Scientific Research 'Demokritos', Attica, Greece
| | | | - Feng Gao
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
| | - Abd Rashid Bin Mohd Yusoff
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea.
| | | | - Dawei Di
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China.
| |
Collapse
|
10
|
Cao YB, Zhang D, Zhang Q, Qiu X, Zhou Y, Poddar S, Fu Y, Zhu Y, Liao JF, Shu L, Ren B, Ding Y, Han B, He Z, Kuang DB, Wang K, Zeng H, Fan Z. High-efficiency, flexible and large-area red/green/blue all-inorganic metal halide perovskite quantum wires-based light-emitting diodes. Nat Commun 2023; 14:4611. [PMID: 37528109 PMCID: PMC10393990 DOI: 10.1038/s41467-023-40150-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Accepted: 07/13/2023] [Indexed: 08/03/2023] Open
Abstract
Metal halide perovskites have shown great promise as a potential candidate for next-generation solid state lighting and display technologies. However, a generic organic ligand-free and antisolvent-free solution method to fabricate highly efficient full-color perovskite light-emitting diodes has not been realized. Herein, by utilizing porous alumina membranes with ultra-small pore size as templates, we have successfully fabricated crystalline all-inorganic perovskite quantum wire arrays with ultrahigh density and excellent uniformity, using a generic organic ligand-free and anti-solvent-free solution method. The quantum confinement effect, in conjunction with the high light out-coupling efficiency, results in high photoluminescence quantum yield for blue, sky-blue, green and pure-red perovskite quantum wires arrays. Consequently, blue, sky-blue, green and pure-red LED devices with spectrally stable electroluminescence have been successfully fabricated, demonstrating external quantum efficiencies of 12.41%, 16.49%, 26.09% and 9.97%, respectively, after introducing a dual-functional small molecule, which serves as surface passivation and hole transporting layer, and a halide vacancy healing agent.
Collapse
Affiliation(s)
- Yang Bryan Cao
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Qianpeng Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Xiao Qiu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yu Zhou
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Swapnadeep Poddar
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yu Fu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yudong Zhu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China
| | - Jin-Feng Liao
- MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510275, China
| | - Lei Shu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Beitao Ren
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yucheng Ding
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Bing Han
- Department of Materials Science and Engineering, Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China
| | - Zhubing He
- Department of Materials Science and Engineering, Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China
| | - Dai-Bin Kuang
- MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510275, China
| | - Kefan Wang
- Henan Provinces Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, 475004, Henan, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
- State Key Laboratory of Advanced Display and Optoelectronics Technologies HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China.
- Guangdong-Hong Kong-Macau Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| |
Collapse
|
11
|
Li J, Duan C, Zhang Q, Chen C, Wen Q, Qin M, Chan CCS, Zou S, Wei J, Xiao Z, Zuo C, Lu X, Wong KS, Fan Z, Yan K. Self-Generated Buried Submicrocavities for High-Performance Near-Infrared Perovskite Light-Emitting Diode. NANO-MICRO LETTERS 2023; 15:125. [PMID: 37188867 PMCID: PMC10185725 DOI: 10.1007/s40820-023-01097-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2023] [Accepted: 04/19/2023] [Indexed: 05/17/2023]
Abstract
Embedding submicrocavities is an effective approach to improve the light out-coupling efficiency (LOCE) for planar perovskite light-emitting diodes (PeLEDs). In this work, we employ phenethylammonium iodide (PEAI) to trigger the Ostwald ripening for the downward recrystallization of perovskite, resulting in spontaneous formation of buried submicrocavities as light output coupler. The simulation suggests the buried submicrocavities can improve the LOCE from 26.8 to 36.2% for near-infrared light. Therefore, PeLED yields peak external quantum efficiency (EQE) increasing from 17.3% at current density of 114 mA cm-2 to 25.5% at current density of 109 mA cm-2 and a radiance increasing from 109 to 487 W sr-1 m-2 with low rolling-off. The turn-on voltage decreased from 1.25 to 1.15 V at 0.1 W sr-1 m-2. Besides, downward recrystallization process slightly reduces the trap density from 8.90 × 1015 to 7.27 × 1015 cm-3. This work provides a self-assembly method to integrate buried output coupler for boosting the performance of PeLEDs.
Collapse
Affiliation(s)
- Jiong Li
- School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Chenghao Duan
- School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, People's Republic of China
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China
| | - Qianpeng Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China
| | - Chang Chen
- School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Qiaoyun Wen
- School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Minchao Qin
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China
| | - Christopher C S Chan
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077, Hong Kong, People's Republic of China
| | - Shibing Zou
- School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Jianwu Wei
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning, 530004, People's Republic of China
| | - Zuo Xiao
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
| | - Chuantian Zuo
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
| | - Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China
| | - Kam Sing Wong
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, 999077, Hong Kong, People's Republic of China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China.
| | - Keyou Yan
- School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, People's Republic of China.
| |
Collapse
|
12
|
Patil P, Sangale SS, Kwon SN, Na SI. Innovative Approaches to Semi-Transparent Perovskite Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1084. [PMID: 36985978 PMCID: PMC10057987 DOI: 10.3390/nano13061084] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Revised: 03/12/2023] [Accepted: 03/13/2023] [Indexed: 06/18/2023]
Abstract
Perovskite solar cells (PSCs) are advancing rapidly and have reached a performance comparable to that of silicon solar cells. Recently, they have been expanding into a variety of applications based on the excellent photoelectric properties of perovskite. Semi-transparent PSCs (ST-PSCs) are one promising application that utilizes the tunable transmittance of perovskite photoactive layers, which can be used in tandem solar cells (TSC) and building-integrated photovoltaics (BIPV). However, the inverse relationship between light transmittance and efficiency is a challenge in the development of ST-PSCs. To overcome these challenges, numerous studies are underway, including those on band-gap tuning, high-performance charge transport layers and electrodes, and creating island-shaped microstructures. This review provides a general and concise summary of the innovative approaches in ST-PSCs, including advances in the perovskite photoactive layer, transparent electrodes, device structures and their applications in TSC and BIPV. Furthermore, the essential requirements and challenges to be addressed to realize ST-PSCs are discussed, and the prospects of ST-PSCs are presented.
Collapse
Affiliation(s)
| | | | - Sung-Nam Kwon
- Correspondence: (S.-N.K.); (S.-I.N.); Tel.: +82-63-270-4465 (S.-I.N.); Fax: +82-63-270-2341 (S.-I.N.)
| | - Seok-In Na
- Correspondence: (S.-N.K.); (S.-I.N.); Tel.: +82-63-270-4465 (S.-I.N.); Fax: +82-63-270-2341 (S.-I.N.)
| |
Collapse
|
13
|
Zhang M, Sun Y, Wang X, Gao J, Wang HY, Lin J, Wang Y, Fu LM, Ai XC, Zhang JP. Influence of Two- and Three-Dimensional Engineering on the Trap State Distribution and Photophysical Properties of Lead Halide Perovskite Polycrystals. J Phys Chem Lett 2023; 14:1934-1940. [PMID: 36786710 DOI: 10.1021/acs.jpclett.3c00125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Constructing a two- and three-dimensional (2D/3D) heterojunction structure on the surface of a 3D perovskite film, termed 2D/3D engineering, is effective in elevating the stability of perovskite polycrystal-based photovoltaic and photoelectronic devices; however, it remains controversial whether this protocol is favorable or detrimental to the device performance. Here, we prepare a series of 2D/3D perovskite films by post-treating the perovskite polycrystalline film with different concentrations of phenethylammonium iodide (PEAI). Systematic spectroscopy and electrochemical studies illustrate that PEAI can penetrate the 3D perovskite network and eliminate the intrinsic trap states of perovskite polycrystals, while the 2D perovskite nanosheets enriched on the top of the polycrystalline film may introduce additional trap states, which manipulate the photoluminescence performance and dynamics of the as-prepared perovskite films in an opposite manner. Based on this finding, the strategy of optimizing the photophysical properties of the host 3D perovskite through 2D/3D engineering is elaborated, paving the way for fabricating high-performance and high-stability perovskite polycrystalline films.
Collapse
Affiliation(s)
- Mengjin Zhang
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Yang Sun
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Xinli Wang
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Jie Gao
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Hao-Yi Wang
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Jun Lin
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Yi Wang
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Li-Min Fu
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Xi-Cheng Ai
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Jian-Ping Zhang
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China
| |
Collapse
|
14
|
Mertens S, Siegmund B, Vandewal K. Ultra-precise photothermal measurements reveal near unity photoluminescence quantum yields of molecular emitters in solution. MATERIALS HORIZONS 2023; 10:594-600. [PMID: 36504131 DOI: 10.1039/d2mh00936f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Molecules with a photoluminescence quantum yield (PLQY) approaching unity enable new applications such as efficient luminescent solar concentrators and spectral redistributors. Moreover, they have the potential for thermally assisted photon upconversion and optical refrigeration, for which the slightest amount of non-radiative loss is detrimental. However, when the PLQY is within a few percent of 100%, it cannot be precisely determined using standard techniques. Here, we combine spectroscopic measurements with photothermal techniques to determine the photothermal threshold energy, i.e. the minimum photon energy at which the chromophores produce heat upon excitation. The PLQY is directly related to this energy and is determined for six fluorescent molecules in low concentration solutions with an unprecedented precision down to ±0.003 within 95% confidence intervals. Independent measurements based on photothermal-deflection spectroscopy and thermal lensing spectroscopy generally provide values within the margin of error, demonstrating the reliability of this measurement concept. Solutions of perylene red in carbon tetrachloride are found to have the highest PLQY of the measured series, being 0.994 ± 0.003. In addition, we observe phonon-assisted, optical upconversion when exciting perylene red within its optical gap at photon energies below its photothermal threshold. Similar measurements on perylene orange in chloroform reveal the presence of low energy sub-gap impurities, preventing upconversion when exciting at the photothermal threshold.
Collapse
Affiliation(s)
- Sigurd Mertens
- UHasselt, Institute for Materials Research (IMO-IMOMEC), Agoralaan, 3590 Diepenbeek, Belgium.
| | - Bernhard Siegmund
- UHasselt, Institute for Materials Research (IMO-IMOMEC), Agoralaan, 3590 Diepenbeek, Belgium.
| | - Koen Vandewal
- UHasselt, Institute for Materials Research (IMO-IMOMEC), Agoralaan, 3590 Diepenbeek, Belgium.
| |
Collapse
|
15
|
Zhu Y, Shu L, Poddar S, Zhang Q, Chen Z, Ding Y, Long Z, Ma S, Ren B, Qiu X, Fan Z. Three-Dimensional Nanopillar Arrays-Based Efficient and Flexible Perovskite Solar Cells with Enhanced Stability. NANO LETTERS 2022; 22:9586-9595. [PMID: 36394382 DOI: 10.1021/acs.nanolett.2c03694] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Perovskite nanopillars (PNPs) are propitious candidates for solar irradiation harvesting and are potential alternatives to thin films in flexible photovoltaics. To realize efficient daily energy output, photovoltaics must absorb sunlight over a broad range of incident angles and wavelengths congruent with the solar spectrum. Herein, we report highly periodic three-dimensional (3D) PNP-based flexible photovoltaics possessing a core-shell structure. The vertically aligned PNP arrays demonstrate up to 95.70% and 75.10% absorption at peak and under an incident angle of 60°. The efficient absorption and the orthogonal carrier collection facilitate an external quantum efficiency of 84.0%-89.18% for broadband wavelength. PNPs have been successfully implemented in flexible solar cells. The porous alumina membrane protects PNPs against water and oxygen intrusion and thereby imparts robustness to photovoltaic devices. Meanwhile, the excellent tolerance to mechanical stress/strain enables our unique PNP-based device to provide efficient solar-to-electricity conversion while undergoing mechanical bending.
Collapse
Affiliation(s)
- Yiyi Zhu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong University of Science and Technology, No. 9 Yuexing first RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
| | - Lei Shu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong University of Science and Technology, No. 9 Yuexing first RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
| | - Swapnadeep Poddar
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong University of Science and Technology, No. 9 Yuexing first RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
| | - Qianpeng Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong University of Science and Technology, No. 9 Yuexing first RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
| | - Zhesi Chen
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong University of Science and Technology, No. 9 Yuexing first RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
| | - Yucheng Ding
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong University of Science and Technology, No. 9 Yuexing first RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
| | - Zhenghao Long
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong University of Science and Technology, No. 9 Yuexing first RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
| | - Suman Ma
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Department of Materials Science and Engineering, Shenzhen, Southern University of Science and Technology, Shenzhen 518055, China
| | - Beitao Ren
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong University of Science and Technology, No. 9 Yuexing first RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
| | - Xiao Qiu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong University of Science and Technology, No. 9 Yuexing first RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong University of Science and Technology, No. 9 Yuexing first RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
| |
Collapse
|
16
|
Nagaya Wong N, Ha SK, Williams K, Shcherbakov-Wu W, Swan JW, Tisdale WA. Robust estimation of charge carrier diffusivity using transient photoluminescence microscopy. J Chem Phys 2022; 157:104201. [DOI: 10.1063/5.0100075] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Transient microscopy has emerged as a powerful tool for imaging the diffusion of excitons and free charge carriers in optoelectronic materials. In many excitonic materials, extraction of diffusion coefficients can be simplified because of the linear relationship between signal intensity and local excited state population. However, in materials where transport is dominated by free charge carriers, extracting diffusivities accurately from multidimensional data is complicated by the nonlinear dependence of the measured signal on the local charge carrier density. To obtain accurate estimates of charge carrier diffusivity from transient microscopy data, statistically robust fitting algorithms coupled to efficient 3D numerical solvers that faithfully relate local carrier dynamics to raw experimental measurables are sometimes needed. Here, we provide a detailed numerical framework for modeling the spatiotemporal dynamics of free charge carriers in bulk semiconductors with significant solving speed reduction and for simulating the corresponding transient photoluminescence microscopy data. To demonstrate the utility of this approach, we apply a fitting algorithm using a Markov chain Monte Carlo sampler to experimental data on bulk CdS and methylammonium lead bromide (MAPbBr3) crystals. Parameter analyses reveal that transient photoluminescence microscopy can be used to obtain robust estimates of charge carrier diffusivities in optoelectronic materials of interest, but that other experimental approaches should be used for obtaining carrier recombination constants. Additionally, simplifications can be made to the fitting model depending on the experimental conditions and material systems studied. Our open-source simulation code and fitting algorithm are made freely available to the scientific community.
Collapse
Affiliation(s)
- Narumi Nagaya Wong
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Seung Kyun Ha
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Kristopher Williams
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Wenbi Shcherbakov-Wu
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - James W. Swan
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - William A. Tisdale
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| |
Collapse
|
17
|
Ding Y, Liu G, Long Z, Zhou Y, Qiu X, Ren B, Zhang Q, Chi C, Wan Z, Huang B, Fan Z. Uncooled self-powered hemispherical biomimetic pit organ for mid- to long-infrared imaging. SCIENCE ADVANCES 2022; 8:eabq8432. [PMID: 36044578 PMCID: PMC9432836 DOI: 10.1126/sciadv.abq8432] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 07/15/2022] [Indexed: 06/15/2023]
Abstract
Infrared vision is highly desirable for applications in multifarious fields. Of the few species with this visual capability, snakes have exceptional infrared perception with the assistance of pit organs. Inspired by the pit organ design we present here a hemispherical biomimetic infrared imaging device. The devices use high-density ionic thermoelectric polymer nanowire arrays that serve as the sensing nerve cells. The individual nanowires exhibit notable voltage response to temperature variation in test objects. An infrared sensor array with 625 pixels on the hemispherical substrate is successfully demonstrated with an ultrawide field of view up to 135°. The device can image body temperature objects without a cooling system and external power supply. This work opens up opportunities for the design and fabrication of bioinspired infrared imaging devices based on emerging ionic thermoelectric materials.
Collapse
Affiliation(s)
- Yucheng Ding
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Microelectronics Thrust, The Hong Kong University of Science and Technology (Guangzhou), Nansha, Guangzhou, Guangdong, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, , HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Gongze Liu
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Zhenghao Long
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, , HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yu Zhou
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, , HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Xiao Qiu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, , HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Beitao Ren
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, , HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Qianpeng Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, , HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Cheng Chi
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Zhu’an Wan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, , HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Baoling Huang
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, , HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| |
Collapse
|
18
|
Chen L, Gan Z, Zhang Y, Cai W, Wei GD, Cui D, Cai J, Li WD. Hybrid modeling of perovskite light-emitting diodes with nanostructured emissive layers. OPTICS EXPRESS 2022; 30:33145-33155. [PMID: 36242361 DOI: 10.1364/oe.465374] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Accepted: 07/25/2022] [Indexed: 06/16/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) have attracted much attention due to their superior performance. When a bottleneck of energy conversion efficiency is achieved with materials engineering, nanostructure incorporation proves to be a feasible approach to further improve device efficiencies via light extraction enhancement. The finite-difference time-domain simulation is widely used for optical analysis of nanostructured optoelectronic devices, but reliable modeling of PeLEDs with nanostructured emissive layers remains unmet due to the difficulty of locating dipole light sources. Herein we established a hybrid process for modeling light emission behaviors of such nanostructured PeLEDs by calibrating light source distribution through electrical simulations. This hybrid modeling method serves as a universal tool for structure optimization of light-emitting diodes with nanostructured emissive layers.
Collapse
|
19
|
Ghaithan HM, Qaid SMH, AlHarbi KK, Bin Ajaj AF, Al-Asbahi BA, Aldwayyan AS. Amplified Spontaneous Emission from Thermally Evaporated High-Quality Thin Films of CsPb(Br 1-xY x) 3 (Y = I, Cl) Perovskites. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:8607-8613. [PMID: 35777070 DOI: 10.1021/acs.langmuir.2c00861] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
As a wavelength-tunable lasing material, perovskites are now generating a lot of scientific attention. Conventional solution-processed CsPbX3 perovskite films sometimes suffer unavoidable pinhole defects and poor surface morphology, severely limiting their performance on amplified spontaneous emission (ASE) and lasing application. Herein, a thermal evaporation approach is explored in our work to achieve a uniform and high-coverage CsPb(Br1-xYx)3 (Y = I, Cl) perovskites polycrystalline thin film. The ASE of these films was studied using a picosecond laser system. The ASE profile increases rapidly over the narrow peak in relation to the laser pump intensity, confirming the development of stimulated emission. ASE began when the energy density threshold was reached and ranged between 25 and 170 μJ/cm2 per pulse for perovskite materials when replacing I with Br and then Cl. This work emphasizes the notable optical properties of high-quality perovskite thin films, leading to possible accessible uses in optoelectronic applications.
Collapse
Affiliation(s)
- Hamid M Ghaithan
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Saif M H Qaid
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
- Department of Physics, Faculty of Science, Ibb University, Ibb 70270, Yemen
| | - Khulod K AlHarbi
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Abrar F Bin Ajaj
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Bandar Ali Al-Asbahi
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
- Department of Physics, Faculty of Science, Sana'a University, Sana'a 12544, Yemen
| | - Abdullah S Aldwayyan
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
- K. A. CARE Energy Research and Innovation Center, King Saud University, Riyadh 11451, Saudi Arabia
| |
Collapse
|
20
|
Zhou C, Huang Y, Zhang Y, Lu B, Xu Y, Ye Q, Yang X, Zhong J, Tang JX, Mao H. CsPbBr 3 microarrays with tunable periodicity, optoelectronic and field emission properties using self-assembled polystyrene template and co-evaporation method. Phys Chem Chem Phys 2022; 24:13210-13216. [PMID: 35593393 DOI: 10.1039/d2cp00955b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The booming growth of all inorganic cesium lead halide perovskites in optoelectronic applications has prompted extensive research interest in the fabrication of ordered nanostructures or microarrays for enhanced device performances. However, the high cost and complexity of commercial lithographic approaches impede the facile fabrication of perovskite microarrays. Herein, CsPbBr3 microarrays with tunable periodicities have been fabricated using a self-assembled polystyrene nanosphere template and a co-evaporation method. The periodicity of CsPbBr3 microarrays is precisely manipulated by simply modifying the size of polystyrene nanospheres. These microarrays are beneficial for light harvesting, leading to better light absorption ability and prolonged photoinduced carrier lifetime. The longest average carrier lifetime of 58.3 ns is obtained for CsPbBr3 microarrays with a periodicity of 1.0 μm. More importantly, the periodic structures of CsPbBr3 microarrays result in a tunable density of emitter tips in field emission devices. Compared to compact CsPbBr3 films, a 68.2% decrease of the turn-on field is observed for CsPbBr3 microarrays when the periodicity is 150 nm. The higher density of emitter tips leads to larger local field enhancement, and hence the largest field enhancement factor of 3346.6. Finally, a good emission current stability for CsPbBr3 microarray-based field emission devices has been demonstrated.
Collapse
Affiliation(s)
- ChunWei Zhou
- School of Physics, Hangzhou Normal University, Hangzhou 311121, P. R. China.
| | - Yu Huang
- School of Physics, Hangzhou Normal University, Hangzhou 311121, P. R. China.
| | - YinLong Zhang
- School of Physics, Hangzhou Normal University, Hangzhou 311121, P. R. China.
| | - Bin Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - YiFeng Xu
- School of Physics, Hangzhou Normal University, Hangzhou 311121, P. R. China.
| | - QuanLin Ye
- School of Physics, Hangzhou Normal University, Hangzhou 311121, P. R. China.
| | - XuXin Yang
- School of Physics, Hangzhou Normal University, Hangzhou 311121, P. R. China.
| | - JianQiang Zhong
- School of Physics, Hangzhou Normal University, Hangzhou 311121, P. R. China.
| | - Jian-Xin Tang
- School of Physics, Hangzhou Normal University, Hangzhou 311121, P. R. China. .,Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Centre of Suzhou Nano Science & Technology, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - HongYing Mao
- School of Physics, Hangzhou Normal University, Hangzhou 311121, P. R. China.
| |
Collapse
|
21
|
Zhang Z, Lamers N, Sun C, Hetherington C, Scheblykin IG, Wallentin J. Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures. NANO LETTERS 2022; 22:2941-2947. [PMID: 35325539 PMCID: PMC9011394 DOI: 10.1021/acs.nanolett.2c00137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/12/2022] [Revised: 03/18/2022] [Indexed: 06/14/2023]
Abstract
Vertically aligned metal halide perovskite (MHP) nanowires are promising for various optoelectronic applications, which can be further enhanced by heterostructures. However, present methods to obtain free-standing vertically aligned MHP nanowire arrays and heterostructures lack the scalability needed for applications. We use a low-temperature solution process to prepare free-standing vertically aligned green-emitting CsPbBr3 nanowires from anodized aluminum oxide templates. The length is controlled from 1 to 20 μm by the precursor amount. The nanowires are single-crystalline and exhibit excellent photoluminescence, clear light guiding and high photoconductivity with a responsivity of 1.9 A/W. We demonstrate blue-green heterostructured nanowire arrays by converting the free-standing part of the nanowires to CsPbCl1.1Br1.9 in an anion exchange process. Our results demonstrate a scalable, self-aligned, and lithography-free approach to achieve high quality free-standing MHP nanowires arrays and heterostructures, offering new possibilities for optoelectronic applications.
Collapse
Affiliation(s)
- Zhaojun Zhang
- Synchrotron
Radiation Research and NanoLund, Department of Physics, Lund University, Box 124, Lund 22100, Sweden
| | - Nils Lamers
- Synchrotron
Radiation Research and NanoLund, Department of Physics, Lund University, Box 124, Lund 22100, Sweden
| | - Chen Sun
- Chemical
Physics and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Crispin Hetherington
- Centre
for Analysis and Synthesis and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Ivan G. Scheblykin
- Chemical
Physics and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Jesper Wallentin
- Synchrotron
Radiation Research and NanoLund, Department of Physics, Lund University, Box 124, Lund 22100, Sweden
| |
Collapse
|
22
|
Pan Z, Wu L, Jiang J, Shen L, Yao K. Searching for High-Quality Halide Perovskite Single Crystals toward X-ray Detection. J Phys Chem Lett 2022; 13:2851-2861. [PMID: 35324216 DOI: 10.1021/acs.jpclett.2c00450] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Metal halide perovskite materials, which combine outstanding physical properties, large absorption coefficient, tailored composition, and low-cost solution-processing, have aroused wide attention for use in various optoelectronic devices. Recently, perovskite single crystals have been rapidly outpacing traditional semiconductor materials in the field of radiation detection. As a prerequisite, achieving high-quality single crystals under controllable solution-phase growth must be tackled to fulfill their full potential as a new paradigm in this stagnated field. This Perspective summarizes the advances in X-ray detectors based on lead halide perovskite single crystals, presenting a comprehensive picture of the relationship among composition engineering, synthesis, and device properties. Additionally, we share our thoughts on several outstanding challenges of perovskite single crystals as promising X-ray detectors and propose possible approaches to the unresolved issues. We anticipate that this Perspective can open up new opportunities to improve their optoelectronic properties, which confers fascinating photonics applications with above and beyond state-of-the-art performance.
Collapse
Affiliation(s)
- Zhengwei Pan
- Institute of Photovoltaics/Department of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
| | - Long Wu
- Institute of Photovoltaics/Department of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
| | - Jizhong Jiang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Kai Yao
- Institute of Photovoltaics/Department of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
| |
Collapse
|
23
|
Lamers N, Zhang Z, Wallentin J. Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices. ACS APPLIED NANO MATERIALS 2022; 5:3177-3182. [PMID: 35372798 PMCID: PMC8961732 DOI: 10.1021/acsanm.2c00188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2022] [Accepted: 02/18/2022] [Indexed: 05/06/2023]
Abstract
Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr3 nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr3 nanowires, which show a strong photoresponsivity of 0.29 A W-1. The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.
Collapse
|
24
|
Zhang J, Liu J. In situ construction of a Te/CsPbBr 3 heterojunction for self-powered photodetector. RSC Adv 2022; 12:2729-2735. [PMID: 35425291 PMCID: PMC8979205 DOI: 10.1039/d1ra08236a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 01/03/2022] [Indexed: 12/16/2022] Open
Abstract
In this study, CsPbBr3 particles were prepared by a simple solvent evaporation method in ambient environment; the p-n heterojunction formed by CsPbBr3 particles on the surface of a single long Te wire was used to construct a high-performance Te/CsPbBr3 photodetector. Compared with CsPbBr3 PDs, the Te/CsPbBr3 photodetector showed improved photocurrent, and exhibited characteristics of excellent self-powered performance, broad-spectrum response (UV-visible), and ultra-fast response speed (t rise = 0.09 ms). In addition, under zero bias and upon 540 nm light irradiation, the device had good responsivity (0.35 mA W-1), high photosensitivity (up to 100 on/off ratio), and a detectivity of 1.42 × 1010 Jones. This study provides insight into the possibility of manufacturing high-performance self-powered photodetectors through a simple in situ construction of heterojunctions.
Collapse
Affiliation(s)
- Jie Zhang
- College of Electronic and Information Engineering, Changshu Institute of Technology Changshu 215500 China
- Suzhou Key Laboratory of Advanced Lighting and Display Technologies China
| | - Jiaojiao Liu
- College of Electronic and Information Engineering, Changshu Institute of Technology Changshu 215500 China
- Suzhou Key Laboratory of Advanced Lighting and Display Technologies China
| |
Collapse
|
25
|
Li CT, Lee KL, Wang SF, Chen LC. Effect of a Rubidium Chloride Carrier Confinement Layer on the Characteristics of CsPbBr 3 Perovskite Light-Emitting Diodes. NANOSCALE RESEARCH LETTERS 2022; 17:2. [PMID: 34978612 PMCID: PMC8724480 DOI: 10.1186/s11671-021-03641-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2021] [Accepted: 12/16/2021] [Indexed: 06/14/2023]
Abstract
This work describes the effect of a rubidium chloride (RbCl) interlayer in CsPbBr3 perovskite light-emitting diode (LED) structures. RbCl crystallites exhibited polyhedral structures and lattice parameters similar to those of CsPbBr3 perovskite crystallites. The lattice mismatch between the RbCl interlayer and CsPbBr3 active layer was only approximately 2%. The devices exhibited the best quality and performance when RbCl was used as the nucleation and carrier confinement layer. The crystallite sizes of CsPbBr3 with 0.2-, 0.5-, and 1-nm-thick RbCl bottom layers were 55.1, 65.4, and 55.1 nm, respectively. The full width at half maximum (FWHM) of the photoluminescence (PL) emission peak for CsPbBr3 with the RbCl bottom layer was 0.096 eV.
Collapse
Affiliation(s)
- Chi-Ta Li
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei, 106 Taiwan
| | - Kuan-Lin Lee
- Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei, 106 Taiwan
| | - Sea-Fue Wang
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei, 106 Taiwan
| | - Lung-Chien Chen
- Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei, 106 Taiwan
| |
Collapse
|
26
|
Chen J, Xiang H, Wang J, Wang R, Li Y, Shan Q, Xu X, Dong Y, Wei C, Zeng H. Perovskite White Light Emitting Diodes: Progress, Challenges, and Opportunities. ACS NANO 2021; 15:17150-17174. [PMID: 34758267 DOI: 10.1021/acsnano.1c06849] [Citation(s) in RCA: 35] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
As global warming, energy shortages, and environment pollution have intensified, low-carbon and energy-saving lighting technology has attracted great attention worldwide. Light emitting diodes (LEDs) have been around for decades and are considered to be the most ideal lighting technology currently due to their high luminescence efficiency (LE) and long lifespan. Besides, along with the development of modern technology, lighting technologies with higher performance and more functions are desired. Perovskite based LEDs (PeLEDs) have recently emerged as ideal candidates for lighting technology owing to the extraordinary photoelectric properties of perovskite, such as high photoluminescence quantum yields (PLQYs), easy wavelength tuning, and low-cost synthesis. Herein, we open this review by introducing the background of white LEDs (WLEDs), including their light-emitting mechanism, typical characteristics, and key indicators in applications. Then, four main approaches to fabricate WLEDs are discussed and compared. After that, in accordance with the four categories, we focus on the recent progress of white PeLEDs (Pe-WLEDs), followed by the challenges and opportunities for Pe-WLEDs in practical application. Meanwhile, some pertinent countermeasures to their challenges are put forward. Finally, the development promise of Pe-WLEDs is explored.
Collapse
Affiliation(s)
- Jiawei Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Hengyang Xiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jian Wang
- Department of Chemistry, University of Washington, Seattle, Washington 98195-2120, United States
| | - Run Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yan Li
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Qingsong Shan
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xiaobao Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yuhui Dong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Changting Wei
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| |
Collapse
|
27
|
Zhang Y, Poddar S, Huang H, Gu L, Zhang Q, Zhou Y, Yan S, Zhang S, Song Z, Huang B, Shen G, Fan Z. Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention. SCIENCE ADVANCES 2021; 7:eabg3788. [PMID: 34516897 PMCID: PMC8442916 DOI: 10.1126/sciadv.abg3788] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2021] [Accepted: 07/14/2021] [Indexed: 05/27/2023]
Abstract
Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX3; X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI3 and ~7 × 109 s ultralong extrapolated retention time for polycrystalline MAPbCl3 NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI3 to MAPbCl3, culminating in the trade-off between the device switching speed and retention time.
Collapse
Affiliation(s)
- Yuting Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangzhou HKUST Fok Ying Tung Research Institute, Nansha, Guangzhou 511458, China
| | - Swapnadeep Poddar
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangzhou HKUST Fok Ying Tung Research Institute, Nansha, Guangzhou 511458, China
| | - He Huang
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China
| | - Leilei Gu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Qianpeng Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangzhou HKUST Fok Ying Tung Research Institute, Nansha, Guangzhou 511458, China
| | - Yu Zhou
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Shuai Yan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Sifan Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Baoling Huang
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangzhou HKUST Fok Ying Tung Research Institute, Nansha, Guangzhou 511458, China
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- HKUST-Shenzhen Research Institute, No. 9 Yuexing First RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
| |
Collapse
|
28
|
Ren M, Cao S, Zhao J, Zou B, Zeng R. Advances and Challenges in Two-Dimensional Organic-Inorganic Hybrid Perovskites Toward High-Performance Light-Emitting Diodes. NANO-MICRO LETTERS 2021; 13:163. [PMID: 34341878 PMCID: PMC8329153 DOI: 10.1007/s40820-021-00685-5] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2021] [Accepted: 06/18/2021] [Indexed: 05/19/2023]
Abstract
Two-dimensional (2D) perovskites are known as one of the most promising luminescent materials due to their structural diversity and outstanding optoelectronic properties. Compared with 3D perovskites, 2D perovskites have natural quantum well structures, large exciton binding energy (Eb) and outstanding thermal stability, which shows great potential in the next-generation displays and solid-state lighting. In this review, the fundamental structure, photophysical and electrical properties of 2D perovskite films were illustrated systematically. Based on the advantages of 2D perovskites, such as special energy funnel process, ultra-fast energy transfer, dense film and low efficiency roll-off, the remarkable achievements of 2D perovskite light-emitting diodes (PeLEDs) are summarized, and exciting challenges of 2D perovskite are also discussed. An outlook on further improving the efficiency of pure-blue PeLEDs, enhancing the operational stability of PeLEDs and reducing the toxicity to push this field forward was also provided. This review provides an overview of the recent developments of 2D perovskite materials and LED applications, and outlining challenges for achieving the high-performance devices.
Collapse
Affiliation(s)
- Miao Ren
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, 530004, People's Republic of China
| | - Sheng Cao
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, 530004, People's Republic of China
| | - Jialong Zhao
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, 530004, People's Republic of China
| | - Bingsuo Zou
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, 530004, People's Republic of China
| | - Ruosheng Zeng
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning, 530004, People's Republic of China.
| |
Collapse
|
29
|
Guo H, Wang H, Fan H, Ye Q, Zhang J, Cao F, Li L, Tong Y, Wang H. Embedding of Ti 3 C 2 T x Nanocrystals in MAPbI 3 Microwires for Improved Responsivity and Detectivity of Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2101954. [PMID: 34272827 DOI: 10.1002/smll.202101954] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2021] [Revised: 05/08/2021] [Indexed: 06/13/2023]
Abstract
Organic-inorganic hybrid MAPbI3 microwires show unique optoelectronic properties for high performances of photodetectors (PDs). However, the defects-assisted nonradiative recombination is harmful for carrier transport, which limits the performances improvement of MAPbI3 microwires PDs. Traditional organic passivation agents effectively combine the surface defects of microwires and also reduce the mobility of overall film based on the perovskite microwires. Therefore, the improvement of internal carrier transport of microwires and the mobility of integrated film simultaneously is a particular challenge for fabrication of performances enhanced perovskite microwires PDs. Here, the Ti3 C2 Tx NCs are fabricated by nonfocus laser irradiation in liquid environment, and hybrids the high conductive NCs in the MAPbI3 microwires. The presence of Ti3 C2 Tx NCs renders defects passivation, enhancement of crystalline orientation, charge transport, and carrier extraction for MAPbI3 microwires, and boots the mobility of microwires based film, leading to about tenfolds enhancement of performances of PDs than that of the control. The maximum responsivity and the detectivity of the Ti3 C2 Tx NCs embedded MAPbI3 microwires PDs reach to 1.70 A W-1 and 7.0 × 1011 Jones in visible window, respectively. The findings suggest that the laser generated high conductive Ti3 C2 Tx NCs is an effective additive for perovskite microwires to fabricate performances enhanced optoelectronics.
Collapse
Affiliation(s)
- Hang Guo
- Instrumental Analysis Center, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Hongyue Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Haibo Fan
- School of Physics, Northwest University, Xi'an, 710127, P. R. China
| | - Qian Ye
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Jin Zhang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Fengren Cao
- School of Physical Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- School of Physical Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Yu Tong
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| | - Hongqiang Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi'an, 710072, P. R. China
| |
Collapse
|
30
|
Jia Y, Yu H, Zhou Y, Li N, Guo Y, Xie F, Qin Z, Lu X, Zhao N. Excess Ion-Induced Efficiency Roll-Off in High-Efficiency Perovskite Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:28546-28554. [PMID: 34110767 DOI: 10.1021/acsami.1c05458] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Applying extensively excess ammonium halides in forming perovskites is a widely used approach to achieve high-performance perovskite light-emitting diodes (PeLEDs). However, most of these PeLEDs suffer from severe external quantum efficiency (EQE) roll-off at high current densities, thereby restricting the realization of high-brightness PeLEDs and laser diodes. In this work, we explore the underlying mechanism of the EQE roll-off in high-efficiency formamidinium lead iodide (FAPbI3)-based PeLEDs. By combining voltage-dependent electrical stress measurements and ex situ ion distribution analysis of PeLEDs, we found that the electric field-driven migration and local segregation of excess iodide ions, originated from nonstoichiometric precursors, trigger the EQE roll-off via promoting imbalanced charge injection. Based on this discovery, we introduced a simple wash-off treatment with chloroform to remove the excess iodides from the perovskite surface and demonstrated that the treatment is highly effective in suppressing the roll-off behavior. By combining the treatment and the use of an ultrathin poly(methyl methacrylate) (PMMA) interlayer, we achieved a high-brightness PeLED with an EQEmax of 19.6%, a critical current density of 1550 mA cm-2, and a radiancemax of 875 W sr-1 m-2. The study reveals the double-edge sword effect of precursor nonstoichiometry and highlights the importance of managing excess ions in perovskite films.
Collapse
Affiliation(s)
- Yongheng Jia
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Hui Yu
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Yang Zhou
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Nan Li
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Yuwei Guo
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Fangyan Xie
- Instrumental Analysis and Research Center Sun Yat-sen University, Guangzhou 510275, China
| | - Zhaotong Qin
- Department of Physics, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Ni Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| |
Collapse
|
31
|
Yang X, Yang H, Hu X, Li F, Yang Z. Photonic crystals for perovskite‐based optoelectronic applications. NANO SELECT 2021. [DOI: 10.1002/nano.202100163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022] Open
Affiliation(s)
- Xia Yang
- Department of Materials Science and Engineering University of Science and Technology Beijing Beijing P. R. China
| | - Hanjun Yang
- Key Laboratory of Luminescence and Optical Information Ministry of Education School of Science Beijing Jiaotong University Beijing P. R. China
| | - Xiaotian Hu
- Institute of Polymers and Energy Chemistry Nanchang University Nanchang P. R. China
| | - Fangfang Li
- Department of Materials Science and Engineering University of Science and Technology Beijing Beijing P. R. China
| | - Zhou Yang
- Department of Materials Science and Engineering University of Science and Technology Beijing Beijing P. R. China
| |
Collapse
|
32
|
Sadhukhan P, Ghosh D, Sengupta P, Bhattacharyya S, Das S. Unraveling the Charge Transport Mechanism in Mechanochemically Processed Hybrid Perovskite Solar Cell. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021; 37:5513-5521. [PMID: 33909421 DOI: 10.1021/acs.langmuir.1c00200] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The long-term operation of organic-inorganic hybrid perovskite solar cells is hampered by the microscopic strain introduced by the multiple thermal cycles during the synthesis of the material via a solution process route. This setback can be eliminated by a room temperature synthesis scheme. In this work, a mechanochemical synthesis technique at room temperature is employed to process CH3NH3PbI2Br films for fabricating perovskite solar cell devices. The solar cell device has produced a 957 mV Voc, a 16.92 mA/cm2 short circuit current density, and a 10.5% efficiency. These values are higher than the published values on mechanochemically synthesized CH3NH3PbI3. The charge transport properties of the devices are studied using DC conductivity and AC impedance spectroscopy, which show a multichannel transport mechanism having both ionic and electronic contributions. A much smaller defect density in the mechanochemically synthesized hybrid perovskite material is confirmed. A polarization assisted recombination mechanism is observed to have a dominant effect on the overall charge transport mechanism. However, no obvious grain boundary and intralayer lattice defect related responses are found in the perovskite layer. Interfacial charge transport and recombination are found to show major effects on both the temperature dependent and illumination dependent impedance spectra.
Collapse
Affiliation(s)
- Priyabrata Sadhukhan
- Department of Instrumentation Science, Jadavpur University, Kolkata 700032, India
| | - Dibyendu Ghosh
- Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research, Kolkata 741246, India
| | - Payal Sengupta
- Department of Physics, Jadavpur University, Kolkata 700032, India
| | - Sayan Bhattacharyya
- Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research, Kolkata 741246, India
| | - Sachindranath Das
- Department of Instrumentation Science, Jadavpur University, Kolkata 700032, India
| |
Collapse
|
33
|
Worku M, Ben-Akacha A, Blessed Shonde T, Liu H, Ma B. The Past, Present, and Future of Metal Halide Perovskite Light‐Emitting Diodes. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202000072] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022] Open
Affiliation(s)
- Michael Worku
- Materials Science and Engineering Program Florida State University Tallahassee FL 32306 USA
| | - Azza Ben-Akacha
- Department of Chemistry and Biochemistry Florida State University Tallahassee FL 32306 USA
| | - Tunde Blessed Shonde
- Department of Chemistry and Biochemistry Florida State University Tallahassee FL 32306 USA
| | - He Liu
- Department of Chemistry and Biochemistry Florida State University Tallahassee FL 32306 USA
| | - Biwu Ma
- Materials Science and Engineering Program Florida State University Tallahassee FL 32306 USA
- Department of Chemistry and Biochemistry Florida State University Tallahassee FL 32306 USA
| |
Collapse
|
34
|
Chen Z, Li Z, Hopper TR, Bakulin AA, Yip HL. Materials, photophysics and device engineering of perovskite light-emitting diodes. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:046401. [PMID: 33730709 DOI: 10.1088/1361-6633/abefba] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2020] [Accepted: 03/17/2021] [Indexed: 06/12/2023]
Abstract
Here we provide a comprehensive review of a newly developed lighting technology based on metal halide perovskites (i.e. perovskite light-emitting diodes) encompassing the research endeavours into materials, photophysics and device engineering. At the outset we survey the basic perovskite structures and their various dimensions (namely three-, two- and zero-dimensional perovskites), and demonstrate how the compositional engineering of these structures affects the perovskite light-emitting properties. Next, we turn to the physics underpinning photo- and electroluminescence in these materials through their connection to the fundamental excited states, energy/charge transport processes and radiative and non-radiative decay mechanisms. In the remainder of the review, we focus on the engineering of perovskite light-emitting diodes, including the history of their development as well as an extensive analysis of contemporary strategies for boosting device performance. Key concepts include balancing the electron/hole injection, suppression of parasitic carrier losses, improvement of the photoluminescence quantum yield and enhancement of the light extraction. Overall, this review reflects the current paradigm for perovskite lighting, and is intended to serve as a foundation to materials and device scientists newly working in this field.
Collapse
Affiliation(s)
- Ziming Chen
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou 510640, People's Republic of China
- School of Environment and Energy, South China University of Technology, Guangzhou University City, Panyu District, Guangzhou 510006, People's Republic of China
| | - Zhenchao Li
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou 510640, People's Republic of China
| | - Thomas R Hopper
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
| | - Artem A Bakulin
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
| | - Hin-Lap Yip
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou 510640, People's Republic of China
- Innovation Center of Printed Photovoltaics, South China Institute of Collaborative Innovation, Dongguan 523808, People's Republic of China
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong Special Administrative Region of China
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong Special Administrative Region of China
| |
Collapse
|
35
|
Zhang L, Sun C, He T, Jiang Y, Wei J, Huang Y, Yuan M. High-performance quasi-2D perovskite light-emitting diodes: from materials to devices. LIGHT, SCIENCE & APPLICATIONS 2021; 10:61. [PMID: 33741895 PMCID: PMC7979804 DOI: 10.1038/s41377-021-00501-0] [Citation(s) in RCA: 90] [Impact Index Per Article: 30.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2020] [Revised: 01/28/2021] [Accepted: 02/24/2021] [Indexed: 05/05/2023]
Abstract
Quasi-two-dimensional (quasi-2D) perovskites have attracted extraordinary attention due to their superior semiconducting properties and have emerged as one of the most promising materials for next-generation light-emitting diodes (LEDs). The outstanding optical properties originate from their structural characteristics. In particular, the inherent quantum-well structure endows them with a large exciton binding energy due to the strong dielectric- and quantum-confinement effects; the corresponding energy transfer among different n-value species thus results in high photoluminescence quantum yields (PLQYs), particularly at low excitation intensities. The review herein presents an overview of the inherent properties of quasi-2D perovskite materials, the corresponding energy transfer and spectral tunability methodologies for thin films, as well as their application in high-performance LEDs. We then summarize the challenges and potential research directions towards developing high-performance and stable quasi-2D PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of quasi-2D perovskite materials and resulting LED devices.
Collapse
Affiliation(s)
- Li Zhang
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, 300071, Tianjin, People's Republic of China
| | - Changjiu Sun
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, 300071, Tianjin, People's Republic of China
| | - Tingwei He
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, 300071, Tianjin, People's Republic of China
| | - Yuanzhi Jiang
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, 300071, Tianjin, People's Republic of China
| | - Junli Wei
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, 300071, Tianjin, People's Republic of China
| | - Yanmin Huang
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, 300071, Tianjin, People's Republic of China
| | - Mingjian Yuan
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, 300071, Tianjin, People's Republic of China.
| |
Collapse
|
36
|
Zhang Z, Suchan K, Li J, Hetherington C, Kiligaridis A, Unger E, Scheblykin IG, Wallentin J. Vertically Aligned CsPbBr 3 Nanowire Arrays with Template-Induced Crystal Phase Transition and Stability. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2021; 125:4860-4868. [PMID: 33763163 PMCID: PMC7976601 DOI: 10.1021/acs.jpcc.0c11217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2020] [Revised: 01/29/2021] [Indexed: 05/06/2023]
Abstract
Metal halide perovskites show great promise for a wide range of optoelectronic applications but are plagued by instability when exposed to air and light. This work presents low-temperature solution growth of vertically aligned CsPbBr3 nanowire arrays in AAO (anodized aluminum oxide) templates with excellent stability, with samples exposed to air for 4 months still exhibiting comparable photoluminescence and UV stability to fresh samples. The single-crystal nanowire length is adjusted from ∼100 nm to 5 μm by adjusting the precursor solution amount and concentration, and we observe length-to-diameter ratios as high as 100. Structural characterization results indicate that large-diameter CsPbBr3 nanowires have an orthorhombic structure, while the 10 nm- and 20 nm-diameter nanowires adopt a cubic structure. Photoluminescence shows a gradual blue-shift in emission with decreasing nanowire diameter and marginal changes under varying illumination power intensity. The CsPbBr3-nanowires/AAO composite exhibits excellent resistance to X-ray radiation and long-term air storage, which makes it promising for future optoelectronic applications such as X-ray scintillators. These results show how physical confinement in AAO can be used to realize CsPbBr3 nanowire arrays and control their morphology and crystal structure.
Collapse
Affiliation(s)
- Zhaojun Zhang
- Synchrotron
Radiation Research and NanoLund, Department of Physics, Lund University, Box 124, Lund 22100, Sweden
| | - Klara Suchan
- Chemical
Physics and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Jun Li
- Chemical
Physics and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Crispin Hetherington
- Centre
for Analysis and Synthesis and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Alexander Kiligaridis
- Chemical
Physics and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Eva Unger
- Chemical
Physics and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Ivan G. Scheblykin
- Chemical
Physics and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Jesper Wallentin
- Synchrotron
Radiation Research and NanoLund, Department of Physics, Lund University, Box 124, Lund 22100, Sweden
| |
Collapse
|
37
|
Zou Y, Cai L, Song T, Sun B. Recent Progress on Patterning Strategies for Perovskite Light‐Emitting Diodes toward a Full‐Color Display Prototype. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202000050] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022] Open
Affiliation(s)
- Yatao Zou
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Institute of Functional Nano and Soft Materials (FUNSOM) Joint International Research Laboratory of Carbon-Based Functional Materials and Devices Soochow University 199 Ren'ai Road Suzhou Jiangsu 215123 P. R. China
| | - Lei Cai
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Institute of Functional Nano and Soft Materials (FUNSOM) Joint International Research Laboratory of Carbon-Based Functional Materials and Devices Soochow University 199 Ren'ai Road Suzhou Jiangsu 215123 P. R. China
| | - Tao Song
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Institute of Functional Nano and Soft Materials (FUNSOM) Joint International Research Laboratory of Carbon-Based Functional Materials and Devices Soochow University 199 Ren'ai Road Suzhou Jiangsu 215123 P. R. China
| | - Baoquan Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Institute of Functional Nano and Soft Materials (FUNSOM) Joint International Research Laboratory of Carbon-Based Functional Materials and Devices Soochow University 199 Ren'ai Road Suzhou Jiangsu 215123 P. R. China
| |
Collapse
|
38
|
Wang K, Xing G, Song Q, Xiao S. Micro- and Nanostructured Lead Halide Perovskites: From Materials to Integrations and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000306. [PMID: 32578267 DOI: 10.1002/adma.202000306] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2020] [Revised: 03/09/2020] [Indexed: 05/25/2023]
Abstract
In the past decade, lead halide perovskites have been intensively explored due to their promising future in photovoltaics. Owing to their remarkable material properties such as solution processability, nice defect tolerance, broad bandgap tunability, high quantum yields, large refractive index, and strong nonlinear effects, this family of materials has also shown advantages in many other optoelectronic devices including microlasers, photodetectors, waveguides, and metasurfaces. Very recently, the stability of perovskite devices has been improved with the optimization of synthesis methods and device architectures. It is widely accepted that it is the time to integrate all the perovskite devices into a real system. However, for integrated photonic circuits, the shapes and distributions of chemically synthesized perovskites are quite random and not suitable for integration. Consequently, controlled synthesis and the top-down fabrication process are highly desirable to break the barriers. Herein, the developments of patterning and integration techniques for halide perovskites, as well as the structure/function relationships, are systematically reviewed. The recent progress in the study of optical responses originating from nanostructured perovskites is also presented. Lastly, the challenges and perspective for nanostructured-perovskite devices are discussed.
Collapse
Affiliation(s)
- Kaiyang Wang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR, 999078, P. R. China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR, 999078, P. R. China
| | - Qinghai Song
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, P. R. China
| | - Shumin Xiao
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, P. R. China
| |
Collapse
|
39
|
Reducing the impact of Auger recombination in quasi-2D perovskite light-emitting diodes. Nat Commun 2021; 12:336. [PMID: 33436618 PMCID: PMC7804015 DOI: 10.1038/s41467-020-20555-9] [Citation(s) in RCA: 105] [Impact Index Per Article: 35.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2020] [Accepted: 12/03/2020] [Indexed: 01/08/2023] Open
Abstract
Rapid Auger recombination represents an important challenge faced by quasi-2D perovskites, which induces resulting perovskite light-emitting diodes' (PeLEDs) efficiency roll-off. In principle, Auger recombination rate is proportional to materials' exciton binding energy (Eb). Thus, Auger recombination can be suppressed by reducing the corresponding materials' Eb. Here, a polar molecule, p-fluorophenethylammonium, is employed to generate quasi-2D perovskites with reduced Eb. Recombination kinetics reveal the Auger recombination rate does decrease to one-order-of magnitude lower compared to its PEA+ analogues. After effective passivation, nonradiative recombination is greatly suppressed, which enables resulting films to exhibit outstanding photoluminescence quantum yields in a broad range of excitation density. We herein demonstrate the very efficient PeLEDs with a peak external quantum efficiency of 20.36%. More importantly, devices exhibit a record luminance of 82,480 cd m-2 due to the suppressed efficiency roll-off, which represent one of the brightest visible PeLEDs yet.
Collapse
|
40
|
Liu DS, Wu J, Xu H, Wang Z. Emerging Light-Emitting Materials for Photonic Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2003733. [PMID: 33306201 DOI: 10.1002/adma.202003733] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2020] [Revised: 07/26/2020] [Indexed: 06/12/2023]
Abstract
The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.
Collapse
Affiliation(s)
- De-Sheng Liu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Hongxing Xu
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| |
Collapse
|
41
|
Jeong JE, Park JH, Jang CH, Song MH, Woo HY. Multifunctional Charge Transporting Materials for Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002176. [PMID: 32886378 DOI: 10.1002/adma.202002176] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2020] [Revised: 05/03/2020] [Indexed: 06/11/2023]
Abstract
Despite their low exciton-binding energies, metal halide perovskites are extensively studied as light-emitting materials owing to narrow emission with high color purity, easy/wide color tunability, and high photoluminescence quantum yields. To improve the efficiency of perovskite light-emitting diodes (PeLEDs), much effort has been devoted to controlling the emitting layer morphologies to induce charge confinement and decrease the nonradiative recombination. The interfaces between the emitting layer and charge transporting layer (CTL) are vulnerable to various defects that deteriorate the efficiency and stability of the PeLEDs. Therefore, the establishment of multifunctional CTLs that can improve not only charge transport but also critical factors that influence device performance, such as defect passivation, morphology/phase control, ion migration suppression, and light outcoupling efficiency, are highly required. Herein, the fundamental limitations of perovskites as emitters (i.e., defects, morphological and phase instability, high refractive index with poor outcoupling) and the recent developments with regard to multifunctional CTLs to compensate such limitations are summarized, and their device applications are also reviewed. Finally, based on the importance of multifunctional CTLs, the outlook and research prospects of multifunctional CTLs for the further improvement of PeLEDs are discussed.
Collapse
Affiliation(s)
- Ji-Eun Jeong
- Department of Chemistry, Korea University, Anam-ro 145, Seoul, 02841, Republic of Korea
| | - Jong Hyun Park
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Chung Hyeon Jang
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Myoung Hoon Song
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Anam-ro 145, Seoul, 02841, Republic of Korea
| |
Collapse
|
42
|
Ghaithan HM, Alahmed ZA, Qaid SMH, Aldwayyan AS. Structural, Electronic, and Optical Properties of CsPb(Br 1-xCl x) 3 Perovskite: First-Principles Study with PBE-GGA and mBJ-GGA Methods. MATERIALS (BASEL, SWITZERLAND) 2020; 13:E4944. [PMID: 33153239 PMCID: PMC7662594 DOI: 10.3390/ma13214944] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/14/2020] [Revised: 10/27/2020] [Accepted: 10/29/2020] [Indexed: 11/16/2022]
Abstract
The effect of halide composition on the structural, electronic, and optical properties of CsPb(Br1-xClx)3 perovskite was investigated in this study. When the chloride (Cl) content of x was increased, the unit cell volume decreased with a linear function. Theoretical X-ray diffraction analyses showed that the peak (at 2θ = 30.4°) shifts to a larger angle (at 2θ = 31.9°) when the average fraction of the incorporated Cl increased. The energy bandgap (Eg) was observed to increase with the increase in Cl concentration. For x = 0.00, 0.25, 0.33, 0.50, 0.66, 0.75, and 1.00, the Eg values calculated using the Perdew-Burke-Ernzerhof potential were between 1.53 and 1.93 eV, while those calculated using the modified Becke-Johnson generalized gradient approximation (mBJ-GGA) potential were between 2.23 and 2.90 eV. The Eg calculated using the mBJ-GGA method best matched the experimental values reported. The effective masses decreased with a concentration increase of Cl to 0.33 and then increased with a further increase in the concentration of Cl. Calculated photoabsorption coefficients show a blue shift of absorption at higher Cl content. The calculations indicate that CsPb(Br1-xClx)3 perovskite could be used in optical and optoelectronic devices by partly replacing bromide with chloride.
Collapse
Affiliation(s)
- Hamid M. Ghaithan
- Physics and Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;
| | - Zeyad. A. Alahmed
- Physics and Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;
| | - Saif M. H. Qaid
- Physics and Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;
| | - Abdullah S. Aldwayyan
- Physics and Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;
- King Abdullah Institute for Nanotechnology, King Saud University, P.O. Box 2454, Riyadh 11451, Saudi Arabia
- K.A.CARE Energy Research and Innovation Center at Riyadh, P.O. Box 2022, Riyadh 11454, Saudi Arabia
| |
Collapse
|
43
|
Li S, Ding H, Cai H, Zhao H, Zhao Y, Yang J, Jin Y, Pan N, Wang X. Realizing CsPbBr 3 Light-Emitting Diode Arrays Based on PDMS Template Confined Solution Growth of Single-Crystalline Perovskite. J Phys Chem Lett 2020; 11:8275-8282. [PMID: 32941051 DOI: 10.1021/acs.jpclett.0c02560] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Metal-halide perovskites have shown excellent optoelectronic properties, among which the array-type architecture is highly desirable. However, both the susceptibility of perovskites to polar solvents and the complex 3D geometry of array structure have led to great challenges for device fabrication and performance, which hinders their further applications. Here, we report a simple but efficient approach highly compatible with the state-of-the-art microelectronics processes to construct single-crystalline array light-emitting diodes (LEDs) of perovskite. The well-aligned single-crystalline array was sandwiched as the emission layer, among the carefully designed multilayer ITO/NiO/CsPbBr3/PMMA/ZnO/Ag structure. Through systematically altering the size of CsPbBr3 single crystal and the thickness of insulation layer, the device performance has been optimized and eventually achieved a 99% working ratio in a 62 × 47 array. Moreover, a prototype device of LED display was also fabricated. These results clearly demonstrate that our strategy is efficient, reliable, and versatile, which can be easily extended to other perovskites.
Collapse
Affiliation(s)
- Sijia Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Huaiyi Ding
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Hongbing Cai
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Hui Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yilong Zhao
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Jinlong Yang
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yan Jin
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Nan Pan
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Xiaoping Wang
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| |
Collapse
|
44
|
Guo S, Liu YS, Zhang XL, Liu YF, Bi YG, Wen XM, Feng J, Sun HB. Improved light extraction in all-inorganic perovskite light-emitting devices with periodic nanostructures by nanoimprinting lithography. OPTICS LETTERS 2020; 45:5156-5159. [PMID: 32932476 DOI: 10.1364/ol.404873] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Accepted: 08/27/2020] [Indexed: 06/11/2023]
Abstract
We report an improved light extraction in all-inorganic perovskite light-emitting devices (PeLEDs) by integrating a periodic corrugated nanostructure at the metallic cathode/organic interface. Nanoimprinting lithography was used to introduce the nanostructures onto the surface of the electron transport layer directly to avoid influencing the morphology and crystallinity of the perovskite film underneath. The trapped energy at the metallic electrode has been successfully outcoupled by the excitation of the surface plasma polariton (SPP) modes induced by the periodic corrugations. The luminance and current efficiency of the periodically corrugated PeLED exhibit enhancements of 42% and 28%, respectively, compared to those of the planar PeLED. The finite-difference time-domain simulation was used to confirm the efficient outcoupling of the SPP modes.
Collapse
|
45
|
Zou C, Lin LY. Effect of emitter orientation on the outcoupling efficiency of perovskite light-emitting diodes. OPTICS LETTERS 2020; 45:4786-4789. [PMID: 32870857 DOI: 10.1364/ol.400814] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2020] [Accepted: 07/28/2020] [Indexed: 06/11/2023]
Abstract
Metal halide perovskite light-emitting diodes (PeLEDs) have experienced a rapid advancement in the last several years with the external quantum efficiencies (EQEs) reaching over 20%, comparable to the state-of-the-art organic LEDs and quantum dot LEDs. The photoluminescence quantum yields of perovskite films have also been approaching 100%. Therefore, the next step to improving the EQE of PeLEDs should be focused on boosting light extraction. In this Letter, we demonstrate the emitter dipole orientation as a key parameter in determining the outcoupling efficiency of PeLEDs. We find that the CsPbBr3 emitter has a slightly preferred orientation with the horizontal-to-vertical dipole ratio of 0.41:0.59, as compared to 0.33:0.67 in the isotropic case. A theoretical analysis predicts that a purely anisotropic perovskite emitter may result in a maximum EQE of 36%.
Collapse
|
46
|
Jeong B, Han H, Park C. Micro- and Nanopatterning of Halide Perovskites Where Crystal Engineering for Emerging Photoelectronics Meets Integrated Device Array Technology. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000597. [PMID: 32530144 DOI: 10.1002/adma.202000597] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2020] [Revised: 03/04/2020] [Accepted: 03/11/2020] [Indexed: 05/25/2023]
Abstract
Tremendous efforts have been devoted to developing thin film halide perovskites (HPs) for use in high-performance photoelectronic devices, including solar cells, displays, and photodetectors. Furthermore, structured HPs with periodic micro- or nanopatterns have recently attracted significant interest due to their potential to not only improve the efficiency of an individual device via the controlled arrangement of HP crystals into a confined geometry, but also to technologically pixelate the device into arrays suitable for future commercialization. However, micro- or nanopatterning of HPs is not usually compatible with conventional photolithography, which is detrimental to ionic HPs and requires special techniques. Herein, a comprehensive overview of the state-of-the-art technologies used to develop micro- and nanometer-scale HP patterns, with an emphasis on their controlled microstructures based on top-down and bottom-up approaches, and their potential for future applications, is provided. Top-down approaches include modified conventional lithographic techniques and soft-lithographic methods, while bottom-up approaches include template-assisted patterning of HPs based on lithographically defined prepatterns and self-assembly. HP patterning is shown here to not only improve device performance, but also to reveal the unprecedented functionality of HPs, leading to new research areas that utilize their novel photophysical properties.
Collapse
Affiliation(s)
- Beomjin Jeong
- Department of Materials Science and Engineering, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hyowon Han
- Department of Materials Science and Engineering, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Cheolmin Park
- Department of Materials Science and Engineering, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, 03722, Republic of Korea
| |
Collapse
|
47
|
Shen Y, Li MN, Li Y, Xie FM, Wu HY, Zhang GH, Chen L, Lee ST, Tang JX. Rational Interface Engineering for Efficient Flexible Perovskite Light-Emitting Diodes. ACS NANO 2020; 14:6107-6116. [PMID: 32223190 DOI: 10.1021/acsnano.0c01908] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Although perovskite light-emitting diodes (PeLEDs) are promising for next-generation displays and lighting, their efficiency is still considerably below that of conventional inorganic and organic counterparts. Significant efforts in various aspects of the electroluminescence process are required to achieve high-performance PeLEDs. Here, we present an improved flexible PeLED structure based on the rational interface engineering for energy-efficient photon generation and enhanced light outcoupling. The interface-stimulated crystallization and defect passivation of the perovskite emitter are synergistically realized by tuning the underlying interlayer, leading to the suppression of trap-mediated nonradiative recombination losses. Besides approaching highly emissive perovskite layers, the outcoupling of trapped light is also enhanced by combining the silver nanowires-based electrode with quasi-random nanopatterns on flexible plastic substrate. Upon the collective optimization of the device structure, a record external quantum efficiency of 24.5% is achieved for flexible PeLEDs based on green-emitting CsPbBr3 perovskite.
Collapse
Affiliation(s)
- Yang Shen
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Meng-Ni Li
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Yanqing Li
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
- School of Physics and Electronics Science, Ministry of Education Nanophotonics and Advanced Instrument Engineering Research Center, East China Normal University, Shanghai 200062, China
| | - Feng-Ming Xie
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Hai-Yan Wu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Guang-Hui Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Li Chen
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
| | - Shuit-Tong Lee
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
- Institute of Organic Optoelectronics (IOO), Jiangsu Industrial Technology Research Institute (JITRI), Wujiang, Suzhou 215215, Jiangsu, China
| | - Jian-Xin Tang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
- Institute of Organic Optoelectronics (IOO), Jiangsu Industrial Technology Research Institute (JITRI), Wujiang, Suzhou 215215, Jiangsu, China
| |
Collapse
|
48
|
Wang S, Li C, Xiang Y, Qi H, Fang Y, Wang A, Shen H, Du Z. Light extraction from quantum dot light emitting diodes by multiscale nanostructures. NANOSCALE ADVANCES 2020; 2:1967-1972. [PMID: 36132497 PMCID: PMC9417338 DOI: 10.1039/d0na00150c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2020] [Accepted: 03/19/2020] [Indexed: 05/15/2023]
Abstract
Improving the light extraction efficiency by introducing optical-functional structures outside of quantum dot light emitting diodes (QLEDs) for further enhancing the external quantum efficiency (EQE) is essential for their application in display and lighting industries. Although the efficiency of QLEDs has been optimized by controlling the synthesis of the quantum dots, the low outcoupling efficiency is indeed unresolved because of total internal reflections, waveguides and metal surface absorptions within the device. Here, we utilize multiscale nanostructures attached to the outer surface of the glass substrate to extract the trapped light from the emitting layers of QLEDs. The result indicates that both the EQE and luminance are improved from 12.29% to 17.94% and 122 400 cd m-2 to 178 700 cd m-2, respectively. The maximum EQE and current efficiency improve to 21.3% and 88.3 cd A-1, respectively, which are the best performances among reported green QLEDs with light outcoupling nanostructures. The improved performance is ascribed to the elimination of total internal reflection by multiscale nanostructures attached to the outer surface of the QLEDs. Additionally, the simulation results of the finite-difference time domain (FDTD) also demonstrate that the light trapping effect is reduced by the multiscale nanostructures. The design of novel light outcoupling nanostructures for further improving the efficiency of QLEDs can promote their application in display and lighting industries.
Collapse
Affiliation(s)
- Shujie Wang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University Kaifeng 475004 China
| | - Chenran Li
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University Kaifeng 475004 China
| | - Yang Xiang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University Kaifeng 475004 China
| | - Hui Qi
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University Kaifeng 475004 China
| | - Yan Fang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University Kaifeng 475004 China
| | - Aqiang Wang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University Kaifeng 475004 China
| | - Huaibin Shen
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University Kaifeng 475004 China
| | - Zuliang Du
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University Kaifeng 475004 China
| |
Collapse
|
49
|
Walters G, Haeberlé L, Quintero-Bermudez R, Brodeur J, Kéna-Cohen S, Sargent EH. Directional Light Emission from Layered Metal Halide Perovskite Crystals. J Phys Chem Lett 2020; 11:3458-3465. [PMID: 32293898 DOI: 10.1021/acs.jpclett.0c00901] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Metal halide perovskites are being increasingly explored for use in light-emitting diodes (LEDs), with achievements in efficiency and brightness charted across the spectrum. One path to further boosting the fraction of useful photons generated by injected electrical charges will be to tailor the emission patterns of devices. Here we investigate directional emission from layered metal halide perovskites. We quantify the proportion of in-plane versus out-of-plane transition dipole components for a suite of layered perovskites. We find that certain perovskite single crystals have highly anisotropic emissions and up to 90% of their transition dipole in-plane. For thin films, emission anisotropy increases as the nominal layer thickness decreases and is generally greater with butylammonium cations than with phenethylammonium cations. Numerical simulations reveal that anisotropic emission from layered perovskites in thin-film LEDs may lead to external quantum efficiencies of 45%, an absolute gain of 13% over equivalent films with isotropic emitters.
Collapse
Affiliation(s)
- Grant Walters
- Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, Ontario M5S 1A4, Canada
| | - Louis Haeberlé
- Department of Engineering Physics, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Rafael Quintero-Bermudez
- Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, Ontario M5S 1A4, Canada
| | - Julien Brodeur
- Department of Engineering Physics, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Stéphane Kéna-Cohen
- Department of Engineering Physics, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, Ontario M5S 1A4, Canada
| |
Collapse
|
50
|
Lin JT, Hu YK, Hou CH, Liao CC, Chuang WT, Chiu CW, Tsai MK, Shyue JJ, Chou PT. Superior Stability and Emission Quantum Yield (23% ± 3%) of Single-Layer 2D Tin Perovskite TEA 2 SnI 4 via Thiocyanate Passivation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2000903. [PMID: 32309909 DOI: 10.1002/smll.202000903] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2020] [Revised: 03/13/2020] [Accepted: 03/16/2020] [Indexed: 05/08/2023]
Abstract
Tin-based perovskite, which exhibits narrower bandgap and comparable photophysical properties to its lead analogs, is one of the most forward-looking lead-free semiconductor materials. However, the poor oxidative stability of tin perovskite hinders the development toward practical application. In this work, the effect of pseudohalide anions on the stability and emission properties of single-layer 2D tin perovskite nanoplates with chemical formula TEA2 SnI4 (TEA = 2-thiophene-ethylammonium) is reported. The results reveal that ammonium thiocyanate (NH4 SCN) is the most effective additive in enhancing the stability and photoluminescence quantum yield of 2D TEA2 SnI4 (23 ± 3%). X-Ray photoelectron spectroscopic investigations on the thiocyanate passivated TEA2 SnI4 nanoplate show less than a 1% increase of Sn4+ signal upon 30 min exposure to air under ambient conditions (298 K, humidity ≈70%). Furthermore, no noticeable decrease in emission intensity of the nanoplate is observed after 20 h in air. The SCN- passivation during the growth stage of TEA2 SnI4 is proposed to play a crucial role in preventing the oxidation of Sn2+ and hence boosts both stability and photoluminescence yield of tin perovskite nanoplates.
Collapse
Affiliation(s)
- Jin-Tai Lin
- Department of Chemistry, National Taiwan University, Taipei, 10617, Taiwan
| | - Yu-Kai Hu
- Department of Chemistry, National Taiwan University, Taipei, 10617, Taiwan
| | - Cheng-Hung Hou
- Research Center for Applied Science, Academia Sinica, Taipei, 11529, Taiwan
| | - Chen-Cheng Liao
- Department of Chemistry, Nation Taiwan Normal University, Taipei, 11677, Taiwan
| | - Wei-Tsung Chuang
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Ching-Wen Chiu
- Department of Chemistry, National Taiwan University, Taipei, 10617, Taiwan
| | - Ming-Kang Tsai
- Department of Chemistry, Nation Taiwan Normal University, Taipei, 11677, Taiwan
| | - Jing-Jong Shyue
- Research Center for Applied Science, Academia Sinica, Taipei, 11529, Taiwan
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Pi-Tai Chou
- Department of Chemistry, National Taiwan University, Taipei, 10617, Taiwan
- Center for Emerging Materials and Advanced Devices, National Taiwan University, Taipei, 10617, Taiwan
| |
Collapse
|