Efficient metal halide perovskite light-emitting diodes with significantly improved light extraction on nanophotonic substrates

Full-color fiber light-emitting diodes based on perovskite quantum wires

Fiber light-emitting diodes (Fi-LEDs), which can be used for wearable lighting and display devices, are one of the key components for fiber/textile electronics. However, there exist a number of impediments to overcome on device fabrication with fiber-like substrates, as well as on device encapsulations. Here, we uniformly grew all-inorganic perovskite quantum wire arrays by filling high-density alumina nanopores on the surface of Al fibers with a dip-coating process. With a two-step evaporation method to coat a surrounding transporting layer and semitransparent electrode, we successfully fabricated full-color Fi-LEDs with emission peaks at 625 nanometers (red), 512 nanometers (green), and 490 nanometers (sky-blue), respectively. Intriguingly, additional polydimethylsiloxane packaging helps instill the mechanical bendability, stretchability, and waterproof feature of Fi-LEDs. The plasticity of Al fiber also allows the one-dimensional architecture Fi-LED to be shaped and constructed for two-dimensional or even three-dimensional architectures, opening up a new vista for advanced lighting with unconventional formfactors.

New nanostructure perovskite-based light-emitting diode with superior light extraction efficiency enhancement

The external quantum efficiency (EQE) of a perovskite-based light-emitting diode (PELED) is a key indicator, comprising the internal quantum efficiency (IQE) and light extraction efficiency (LEE). Currently, enhancing EQE faces a major challenge in optimizing LEE. This study introduces an innovative structure to boost LEE, exploring various influencing parameters. The transition from a planar to a domical architecture leverages factors like the waveguiding effect, resulting in a remarkable tenfold increase in LEE, from 6 to 59%. Additionally, investigations into factors affecting LEE, such as altering dipole orientation, material-substrate contact angle, and layer thickness, reveal the potential for further improvement. The optimized structure attains an impressive LEE value of 74%.

Enhancing Light Out-coupling in Perovskite Light-Emitting Diodes through Plasmonic Nanostructures

Perovskite light-emitting diodes (PeLEDs) have emerged as promising candidates for lighting and display technologies owing to their high photoluminescence quantum efficiency and high carrier mobility. However, the performance of planar PeLEDs is limited by the out-coupling efficiency, predominantly governed by photonic losses at device interfaces. Most notably, the plasmonic loss at the metal electrode interfaces can account for up to 60% of the total loss. Here, we investigate the use of plasmonic nanostructures to improve the light out-coupling in PeLEDs. By integrating these nanostructures with PeLEDs, we have demonstrated an effectively reduced plasmonic loss and enhanced light out-coupling. As a result, the nanostructured PeLEDs exhibit an average 1.5-fold increase in external quantum efficiency and an ∼20-fold improvement in device lifetime. This finding offers a generic approach for enhancing light out-coupling, promising great potential to go beyond existing performance limitations.

Progress and Application of Halide Perovskite Materials for Solar Cells and Light Emitting Devices

Halide perovskite materials have attracted worldwide attention in the photovoltaic area due to the rapid improvement in efficiency, from less than 4% in 2009 to 26.1% in 2023 with only a nanometer lever photo-active layer. Meanwhile, this nova star found applications in many other areas, such as light emitting, sensor, etc. This review started with the fundamentals of physics and chemistry behind the excellent performance of halide perovskite materials for photovoltaic/light emitting and the methods for preparing them. Then, it described the basic principles for solar cells and light emitting devices. It summarized the strategies including nanotechnology to improve the performance and the application of halide perovskite materials in these two areas: from structure-property relation to how each component in the devices affects the overall performance. Moreover, this review listed the challenges for the future applications of halide perovskite materials.

Large-Area Flexible Perovskite Light-Emitting Diodes Enabled by Inkjet Printing

Metal halide perovskite light-emitting diodes (PeLEDs) are attracting increasing attention due to their potential applications in flat panel lighting and displays. The solution process, large-area fabrication, and flexibility are attractive properties of PeLEDs over traditional inorganic LEDs. However, it is still very challenging to deposit uniform perovskite films on flexible substrates using a blade or slot-die coating, as the flexible substrate is not perfectly flat. Here, the inkjet printing technique is adopted, and the key challenges are overcome step-by-step in preparing large-area films on flexible substrates. Double-hole transporting layers are first used and a wetting interfacial layer to improve the surface wettability so that the printed perovskite droplets can form a continuous wet film. The fluidic and evaporation dynamics of the perovskite wet layer is manipulated to suppress the coffee ring effect by solvent engineering. Uniform perovskite films are obtained finally on flexible substrates with different perovskite compositions. The peak external quantum efficiency of the inkjet-printed PeLEDs reaches 14.3%. Large-area flexible PeLEDs (4 × 7 cm2 ) also show very uniform emission. This work represents a significant step toward real applications of large-area PeLEDs in flexible flat-panel lighting.

Thermal/Water-Induced Phase Transformation and Photoluminescence of Hybrid Manganese(II)-Based Chloride Single Crystals

Mn(II)-based hybrid halides have attracted great attention from the optoelectronic fields due to their nontoxicity, special luminescent properties, and structural diversity. Here, two novel organic-inorganic hybrid Mn(II)-based halide single crystals (1-mpip)MnCl4·3H2O and (1-mpip)2MnCl6 (1-mpip = 1-methylpiperazinium, C5H14N2+) were grown by a slow evaporation method in ambient atmosphere. Interestingly, (1-mpip)2MnCl6 single crystals exhibit the green emission with a PL peak at 522 nm and photoluminescence quantum yields (PLQYs) of ≈5.4%, whereas (1-mpip)MnCl4·3H2O single crystals exhibit no emission characteristics. More importantly, there exists a thermal-induced phase transformation from (1-mpip)MnCl4·3H2O to emissive (1-mpip)2MnCl6 at 372 K. Moreover, a reversible luminescent conversion between (1-mpip)MnCl4·3H2O and (1-mpip)2MnCl6 was simply achieved when heated to 383 K and placed in a humid environment or sprayed with water. This work not only deepens the understanding of the thermal-induced phase transformation and humidity-sensitive luminescent conversion of hybrid Mn(II)-based halides, but also provides a guidance for thermal and humidity sensing and anticounterfeiting applications of these hybrid materials.

Luminescence and Degeneration Mechanism of Perovskite Light-Emitting Diodes and Strategies for Improving Device Performance

Perovskite light-emitting diodes (PeLEDs) can be a promising technology for next-generation display and lighting applications due to their excellent optoelectronic properties. However, a systematical overview of luminescence and degradation mechanism of perovskite materials and PeLEDs is lacking. Therefore, it is crucial to fully understand these mechanisms and further improve device performances. In this work, the fundamental photophysical processes of perovskite materials, electroluminescence mechanism of PeLEDs including carrier kinetics and efficiency roll-off as well as device degradation mechanism are discussed in detail. In addition, the strategies to improve device performances are summarized, including optimization of photoluminescence quantum yield, charge injection and recombination, and light outcoupling efficiency. It is hoped that this work can provide guidance for future development of PeLEDs and ultimately realize industrial applications.

Electronic Structure and Optical Properties of Inorganic Pm3m and Pnma CsPbX3 (X = Cl, Br, I) Perovskite: A Theoretical Understanding from Density Functional Theory Calculations

In this study, we investigated the optoelectronic properties of cubic (Pm3m) and orthorhombic (Pnma) CsPbX3 (X = I, Br, and Cl). We utilized the full potential linear augmented plane wave method, which is implemented in the WIEN2k code, to facilitate the investigation. Different exchange potentials were used to analyze the optoelectronic behavior using the available density functional theory methods. Our findings revealed that CsPbX3 perovskites display direct band gaps at the R and Г points for cubic (Pm3m) and orthorhombic (Pnma) structures, respectively. Among the exchange potentials, the mBJ-GGA method provided the most accurate results. These outcomes concurred with the experimental results. In both Pm3m and Pnma structures, interesting changes were observed when iodide (I) was replaced with bromine (Br) and then chlorine (Cl). The direct band gap at the R and Г points shifted to higher energy levels. Similarly, when I was replaced with Br and Cl, there was a noticeable decrease in the absorption coefficient, dielectric constants, refractive index, and reflectivity, in addition to a band gap shift to higher energy levels.

Light management for perovskite light-emitting diodes

Perovskite light-emitting diodes (LEDs) have reached external quantum efficiencies of over 20% for various colours, showing great potential for display and lighting applications. Despite the internal quantum efficiencies of the best-performing devices already approaching unity, around 80% of the internally generated photons are trapped in the devices and lose energy through a variety of lossy channels. Significant opportunities for improving efficiency and maximizing photon extraction lie in the effective management of light. In this Review we analyse light management strategies based on the intrinsic optical properties of the perovskite materials and the extrinsic properties related to device structures. These approaches should allow the external quantum efficiencies of perovskite LEDs to substantially exceed the conventional limits of planar organic LED devices. By revisiting lessons learned from organic LEDs and perovskite solar cells, we highlight possible directions of future research towards perovskite LEDs with ultrahigh efficiencies.

High-efficiency, flexible and large-area red/green/blue all-inorganic metal halide perovskite quantum wires-based light-emitting diodes

Metal halide perovskites have shown great promise as a potential candidate for next-generation solid state lighting and display technologies. However, a generic organic ligand-free and antisolvent-free solution method to fabricate highly efficient full-color perovskite light-emitting diodes has not been realized. Herein, by utilizing porous alumina membranes with ultra-small pore size as templates, we have successfully fabricated crystalline all-inorganic perovskite quantum wire arrays with ultrahigh density and excellent uniformity, using a generic organic ligand-free and anti-solvent-free solution method. The quantum confinement effect, in conjunction with the high light out-coupling efficiency, results in high photoluminescence quantum yield for blue, sky-blue, green and pure-red perovskite quantum wires arrays. Consequently, blue, sky-blue, green and pure-red LED devices with spectrally stable electroluminescence have been successfully fabricated, demonstrating external quantum efficiencies of 12.41%, 16.49%, 26.09% and 9.97%, respectively, after introducing a dual-functional small molecule, which serves as surface passivation and hole transporting layer, and a halide vacancy healing agent.

Self-Generated Buried Submicrocavities for High-Performance Near-Infrared Perovskite Light-Emitting Diode

Embedding submicrocavities is an effective approach to improve the light out-coupling efficiency (LOCE) for planar perovskite light-emitting diodes (PeLEDs). In this work, we employ phenethylammonium iodide (PEAI) to trigger the Ostwald ripening for the downward recrystallization of perovskite, resulting in spontaneous formation of buried submicrocavities as light output coupler. The simulation suggests the buried submicrocavities can improve the LOCE from 26.8 to 36.2% for near-infrared light. Therefore, PeLED yields peak external quantum efficiency (EQE) increasing from 17.3% at current density of 114 mA cm-2 to 25.5% at current density of 109 mA cm-2 and a radiance increasing from 109 to 487 W sr-1 m-2 with low rolling-off. The turn-on voltage decreased from 1.25 to 1.15 V at 0.1 W sr-1 m-2. Besides, downward recrystallization process slightly reduces the trap density from 8.90 × 1015 to 7.27 × 1015 cm-3. This work provides a self-assembly method to integrate buried output coupler for boosting the performance of PeLEDs.

Innovative Approaches to Semi-Transparent Perovskite Solar Cells

Perovskite solar cells (PSCs) are advancing rapidly and have reached a performance comparable to that of silicon solar cells. Recently, they have been expanding into a variety of applications based on the excellent photoelectric properties of perovskite. Semi-transparent PSCs (ST-PSCs) are one promising application that utilizes the tunable transmittance of perovskite photoactive layers, which can be used in tandem solar cells (TSC) and building-integrated photovoltaics (BIPV). However, the inverse relationship between light transmittance and efficiency is a challenge in the development of ST-PSCs. To overcome these challenges, numerous studies are underway, including those on band-gap tuning, high-performance charge transport layers and electrodes, and creating island-shaped microstructures. This review provides a general and concise summary of the innovative approaches in ST-PSCs, including advances in the perovskite photoactive layer, transparent electrodes, device structures and their applications in TSC and BIPV. Furthermore, the essential requirements and challenges to be addressed to realize ST-PSCs are discussed, and the prospects of ST-PSCs are presented.

Influence of Two- and Three-Dimensional Engineering on the Trap State Distribution and Photophysical Properties of Lead Halide Perovskite Polycrystals

Constructing a two- and three-dimensional (2D/3D) heterojunction structure on the surface of a 3D perovskite film, termed 2D/3D engineering, is effective in elevating the stability of perovskite polycrystal-based photovoltaic and photoelectronic devices; however, it remains controversial whether this protocol is favorable or detrimental to the device performance. Here, we prepare a series of 2D/3D perovskite films by post-treating the perovskite polycrystalline film with different concentrations of phenethylammonium iodide (PEAI). Systematic spectroscopy and electrochemical studies illustrate that PEAI can penetrate the 3D perovskite network and eliminate the intrinsic trap states of perovskite polycrystals, while the 2D perovskite nanosheets enriched on the top of the polycrystalline film may introduce additional trap states, which manipulate the photoluminescence performance and dynamics of the as-prepared perovskite films in an opposite manner. Based on this finding, the strategy of optimizing the photophysical properties of the host 3D perovskite through 2D/3D engineering is elaborated, paving the way for fabricating high-performance and high-stability perovskite polycrystalline films.

Ultra-precise photothermal measurements reveal near unity photoluminescence quantum yields of molecular emitters in solution

Molecules with a photoluminescence quantum yield (PLQY) approaching unity enable new applications such as efficient luminescent solar concentrators and spectral redistributors. Moreover, they have the potential for thermally assisted photon upconversion and optical refrigeration, for which the slightest amount of non-radiative loss is detrimental. However, when the PLQY is within a few percent of 100%, it cannot be precisely determined using standard techniques. Here, we combine spectroscopic measurements with photothermal techniques to determine the photothermal threshold energy, i.e. the minimum photon energy at which the chromophores produce heat upon excitation. The PLQY is directly related to this energy and is determined for six fluorescent molecules in low concentration solutions with an unprecedented precision down to ±0.003 within 95% confidence intervals. Independent measurements based on photothermal-deflection spectroscopy and thermal lensing spectroscopy generally provide values within the margin of error, demonstrating the reliability of this measurement concept. Solutions of perylene red in carbon tetrachloride are found to have the highest PLQY of the measured series, being 0.994 ± 0.003. In addition, we observe phonon-assisted, optical upconversion when exciting perylene red within its optical gap at photon energies below its photothermal threshold. Similar measurements on perylene orange in chloroform reveal the presence of low energy sub-gap impurities, preventing upconversion when exciting at the photothermal threshold.

Three-Dimensional Nanopillar Arrays-Based Efficient and Flexible Perovskite Solar Cells with Enhanced Stability

Perovskite nanopillars (PNPs) are propitious candidates for solar irradiation harvesting and are potential alternatives to thin films in flexible photovoltaics. To realize efficient daily energy output, photovoltaics must absorb sunlight over a broad range of incident angles and wavelengths congruent with the solar spectrum. Herein, we report highly periodic three-dimensional (3D) PNP-based flexible photovoltaics possessing a core-shell structure. The vertically aligned PNP arrays demonstrate up to 95.70% and 75.10% absorption at peak and under an incident angle of 60°. The efficient absorption and the orthogonal carrier collection facilitate an external quantum efficiency of 84.0%-89.18% for broadband wavelength. PNPs have been successfully implemented in flexible solar cells. The porous alumina membrane protects PNPs against water and oxygen intrusion and thereby imparts robustness to photovoltaic devices. Meanwhile, the excellent tolerance to mechanical stress/strain enables our unique PNP-based device to provide efficient solar-to-electricity conversion while undergoing mechanical bending.

Robust estimation of charge carrier diffusivity using transient photoluminescence microscopy

Transient microscopy has emerged as a powerful tool for imaging the diffusion of excitons and free charge carriers in optoelectronic materials. In many excitonic materials, extraction of diffusion coefficients can be simplified because of the linear relationship between signal intensity and local excited state population. However, in materials where transport is dominated by free charge carriers, extracting diffusivities accurately from multidimensional data is complicated by the nonlinear dependence of the measured signal on the local charge carrier density. To obtain accurate estimates of charge carrier diffusivity from transient microscopy data, statistically robust fitting algorithms coupled to efficient 3D numerical solvers that faithfully relate local carrier dynamics to raw experimental measurables are sometimes needed. Here, we provide a detailed numerical framework for modeling the spatiotemporal dynamics of free charge carriers in bulk semiconductors with significant solving speed reduction and for simulating the corresponding transient photoluminescence microscopy data. To demonstrate the utility of this approach, we apply a fitting algorithm using a Markov chain Monte Carlo sampler to experimental data on bulk CdS and methylammonium lead bromide (MAPbBr3) crystals. Parameter analyses reveal that transient photoluminescence microscopy can be used to obtain robust estimates of charge carrier diffusivities in optoelectronic materials of interest, but that other experimental approaches should be used for obtaining carrier recombination constants. Additionally, simplifications can be made to the fitting model depending on the experimental conditions and material systems studied. Our open-source simulation code and fitting algorithm are made freely available to the scientific community.

Uncooled self-powered hemispherical biomimetic pit organ for mid- to long-infrared imaging

Infrared vision is highly desirable for applications in multifarious fields. Of the few species with this visual capability, snakes have exceptional infrared perception with the assistance of pit organs. Inspired by the pit organ design we present here a hemispherical biomimetic infrared imaging device. The devices use high-density ionic thermoelectric polymer nanowire arrays that serve as the sensing nerve cells. The individual nanowires exhibit notable voltage response to temperature variation in test objects. An infrared sensor array with 625 pixels on the hemispherical substrate is successfully demonstrated with an ultrawide field of view up to 135°. The device can image body temperature objects without a cooling system and external power supply. This work opens up opportunities for the design and fabrication of bioinspired infrared imaging devices based on emerging ionic thermoelectric materials.

Hybrid modeling of perovskite light-emitting diodes with nanostructured emissive layers

Perovskite light-emitting diodes (PeLEDs) have attracted much attention due to their superior performance. When a bottleneck of energy conversion efficiency is achieved with materials engineering, nanostructure incorporation proves to be a feasible approach to further improve device efficiencies via light extraction enhancement. The finite-difference time-domain simulation is widely used for optical analysis of nanostructured optoelectronic devices, but reliable modeling of PeLEDs with nanostructured emissive layers remains unmet due to the difficulty of locating dipole light sources. Herein we established a hybrid process for modeling light emission behaviors of such nanostructured PeLEDs by calibrating light source distribution through electrical simulations. This hybrid modeling method serves as a universal tool for structure optimization of light-emitting diodes with nanostructured emissive layers.

Amplified Spontaneous Emission from Thermally Evaporated High-Quality Thin Films of CsPb(Br1-xYx)3 (Y = I, Cl) Perovskites

As a wavelength-tunable lasing material, perovskites are now generating a lot of scientific attention. Conventional solution-processed CsPbX₃ perovskite films sometimes suffer unavoidable pinhole defects and poor surface morphology, severely limiting their performance on amplified spontaneous emission (ASE) and lasing application. Herein, a thermal evaporation approach is explored in our work to achieve a uniform and high-coverage CsPb(Br_1-xY_x)₃ (Y = I, Cl) perovskites polycrystalline thin film. The ASE of these films was studied using a picosecond laser system. The ASE profile increases rapidly over the narrow peak in relation to the laser pump intensity, confirming the development of stimulated emission. ASE began when the energy density threshold was reached and ranged between 25 and 170 μJ/cm² per pulse for perovskite materials when replacing I with Br and then Cl. This work emphasizes the notable optical properties of high-quality perovskite thin films, leading to possible accessible uses in optoelectronic applications.

CsPbBr3 microarrays with tunable periodicity, optoelectronic and field emission properties using self-assembled polystyrene template and co-evaporation method

The booming growth of all inorganic cesium lead halide perovskites in optoelectronic applications has prompted extensive research interest in the fabrication of ordered nanostructures or microarrays for enhanced device performances. However, the high cost and complexity of commercial lithographic approaches impede the facile fabrication of perovskite microarrays. Herein, CsPbBr₃ microarrays with tunable periodicities have been fabricated using a self-assembled polystyrene nanosphere template and a co-evaporation method. The periodicity of CsPbBr₃ microarrays is precisely manipulated by simply modifying the size of polystyrene nanospheres. These microarrays are beneficial for light harvesting, leading to better light absorption ability and prolonged photoinduced carrier lifetime. The longest average carrier lifetime of 58.3 ns is obtained for CsPbBr₃ microarrays with a periodicity of 1.0 μm. More importantly, the periodic structures of CsPbBr₃ microarrays result in a tunable density of emitter tips in field emission devices. Compared to compact CsPbBr₃ films, a 68.2% decrease of the turn-on field is observed for CsPbBr₃ microarrays when the periodicity is 150 nm. The higher density of emitter tips leads to larger local field enhancement, and hence the largest field enhancement factor of 3346.6. Finally, a good emission current stability for CsPbBr₃ microarray-based field emission devices has been demonstrated.

Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures

Vertically aligned metal halide perovskite (MHP) nanowires are promising for various optoelectronic applications, which can be further enhanced by heterostructures. However, present methods to obtain free-standing vertically aligned MHP nanowire arrays and heterostructures lack the scalability needed for applications. We use a low-temperature solution process to prepare free-standing vertically aligned green-emitting CsPbBr₃ nanowires from anodized aluminum oxide templates. The length is controlled from 1 to 20 μm by the precursor amount. The nanowires are single-crystalline and exhibit excellent photoluminescence, clear light guiding and high photoconductivity with a responsivity of 1.9 A/W. We demonstrate blue-green heterostructured nanowire arrays by converting the free-standing part of the nanowires to CsPbCl_1.1Br_1.9 in an anion exchange process. Our results demonstrate a scalable, self-aligned, and lithography-free approach to achieve high quality free-standing MHP nanowires arrays and heterostructures, offering new possibilities for optoelectronic applications.

Searching for High-Quality Halide Perovskite Single Crystals toward X-ray Detection

Metal halide perovskite materials, which combine outstanding physical properties, large absorption coefficient, tailored composition, and low-cost solution-processing, have aroused wide attention for use in various optoelectronic devices. Recently, perovskite single crystals have been rapidly outpacing traditional semiconductor materials in the field of radiation detection. As a prerequisite, achieving high-quality single crystals under controllable solution-phase growth must be tackled to fulfill their full potential as a new paradigm in this stagnated field. This Perspective summarizes the advances in X-ray detectors based on lead halide perovskite single crystals, presenting a comprehensive picture of the relationship among composition engineering, synthesis, and device properties. Additionally, we share our thoughts on several outstanding challenges of perovskite single crystals as promising X-ray detectors and propose possible approaches to the unresolved issues. We anticipate that this Perspective can open up new opportunities to improve their optoelectronic properties, which confers fascinating photonics applications with above and beyond state-of-the-art performance.

Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices

Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr₃ nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr₃ nanowires, which show a strong photoresponsivity of 0.29 A W^-1. The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.

In situ construction of a Te/CsPbBr3 heterojunction for self-powered photodetector

In this study, CsPbBr3 particles were prepared by a simple solvent evaporation method in ambient environment; the p-n heterojunction formed by CsPbBr3 particles on the surface of a single long Te wire was used to construct a high-performance Te/CsPbBr3 photodetector. Compared with CsPbBr3 PDs, the Te/CsPbBr3 photodetector showed improved photocurrent, and exhibited characteristics of excellent self-powered performance, broad-spectrum response (UV-visible), and ultra-fast response speed (t rise = 0.09 ms). In addition, under zero bias and upon 540 nm light irradiation, the device had good responsivity (0.35 mA W-1), high photosensitivity (up to 100 on/off ratio), and a detectivity of 1.42 × 1010 Jones. This study provides insight into the possibility of manufacturing high-performance self-powered photodetectors through a simple in situ construction of heterojunctions.

Effect of a Rubidium Chloride Carrier Confinement Layer on the Characteristics of CsPbBr3 Perovskite Light-Emitting Diodes

This work describes the effect of a rubidium chloride (RbCl) interlayer in CsPbBr3 perovskite light-emitting diode (LED) structures. RbCl crystallites exhibited polyhedral structures and lattice parameters similar to those of CsPbBr3 perovskite crystallites. The lattice mismatch between the RbCl interlayer and CsPbBr3 active layer was only approximately 2%. The devices exhibited the best quality and performance when RbCl was used as the nucleation and carrier confinement layer. The crystallite sizes of CsPbBr3 with 0.2-, 0.5-, and 1-nm-thick RbCl bottom layers were 55.1, 65.4, and 55.1 nm, respectively. The full width at half maximum (FWHM) of the photoluminescence (PL) emission peak for CsPbBr3 with the RbCl bottom layer was 0.096 eV.

Perovskite White Light Emitting Diodes: Progress, Challenges, and Opportunities

As global warming, energy shortages, and environment pollution have intensified, low-carbon and energy-saving lighting technology has attracted great attention worldwide. Light emitting diodes (LEDs) have been around for decades and are considered to be the most ideal lighting technology currently due to their high luminescence efficiency (LE) and long lifespan. Besides, along with the development of modern technology, lighting technologies with higher performance and more functions are desired. Perovskite based LEDs (PeLEDs) have recently emerged as ideal candidates for lighting technology owing to the extraordinary photoelectric properties of perovskite, such as high photoluminescence quantum yields (PLQYs), easy wavelength tuning, and low-cost synthesis. Herein, we open this review by introducing the background of white LEDs (WLEDs), including their light-emitting mechanism, typical characteristics, and key indicators in applications. Then, four main approaches to fabricate WLEDs are discussed and compared. After that, in accordance with the four categories, we focus on the recent progress of white PeLEDs (Pe-WLEDs), followed by the challenges and opportunities for Pe-WLEDs in practical application. Meanwhile, some pertinent countermeasures to their challenges are put forward. Finally, the development promise of Pe-WLEDs is explored.

Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention

Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX₃; X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI₃ and ~7 × 10⁹ s ultralong extrapolated retention time for polycrystalline MAPbCl₃ NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI₃ to MAPbCl₃, culminating in the trade-off between the device switching speed and retention time.

Advances and Challenges in Two-Dimensional Organic-Inorganic Hybrid Perovskites Toward High-Performance Light-Emitting Diodes

Two-dimensional (2D) perovskites are known as one of the most promising luminescent materials due to their structural diversity and outstanding optoelectronic properties. Compared with 3D perovskites, 2D perovskites have natural quantum well structures, large exciton binding energy (Eb) and outstanding thermal stability, which shows great potential in the next-generation displays and solid-state lighting. In this review, the fundamental structure, photophysical and electrical properties of 2D perovskite films were illustrated systematically. Based on the advantages of 2D perovskites, such as special energy funnel process, ultra-fast energy transfer, dense film and low efficiency roll-off, the remarkable achievements of 2D perovskite light-emitting diodes (PeLEDs) are summarized, and exciting challenges of 2D perovskite are also discussed. An outlook on further improving the efficiency of pure-blue PeLEDs, enhancing the operational stability of PeLEDs and reducing the toxicity to push this field forward was also provided. This review provides an overview of the recent developments of 2D perovskite materials and LED applications, and outlining challenges for achieving the high-performance devices.

Embedding of Ti3 C2 Tx Nanocrystals in MAPbI3 Microwires for Improved Responsivity and Detectivity of Photodetector

Organic-inorganic hybrid MAPbI₃ microwires show unique optoelectronic properties for high performances of photodetectors (PDs). However, the defects-assisted nonradiative recombination is harmful for carrier transport, which limits the performances improvement of MAPbI₃ microwires PDs. Traditional organic passivation agents effectively combine the surface defects of microwires and also reduce the mobility of overall film based on the perovskite microwires. Therefore, the improvement of internal carrier transport of microwires and the mobility of integrated film simultaneously is a particular challenge for fabrication of performances enhanced perovskite microwires PDs. Here, the Ti₃ C₂ T_x NCs are fabricated by nonfocus laser irradiation in liquid environment, and hybrids the high conductive NCs in the MAPbI₃ microwires. The presence of Ti₃ C₂ T_x NCs renders defects passivation, enhancement of crystalline orientation, charge transport, and carrier extraction for MAPbI₃ microwires, and boots the mobility of microwires based film, leading to about tenfolds enhancement of performances of PDs than that of the control. The maximum responsivity and the detectivity of the Ti₃ C₂ T_x NCs embedded MAPbI₃ microwires PDs reach to 1.70 A W^-1 and 7.0 × 10¹¹ Jones in visible window, respectively. The findings suggest that the laser generated high conductive Ti₃ C₂ T_x NCs is an effective additive for perovskite microwires to fabricate performances enhanced optoelectronics.

Excess Ion-Induced Efficiency Roll-Off in High-Efficiency Perovskite Light-Emitting Diodes

Applying extensively excess ammonium halides in forming perovskites is a widely used approach to achieve high-performance perovskite light-emitting diodes (PeLEDs). However, most of these PeLEDs suffer from severe external quantum efficiency (EQE) roll-off at high current densities, thereby restricting the realization of high-brightness PeLEDs and laser diodes. In this work, we explore the underlying mechanism of the EQE roll-off in high-efficiency formamidinium lead iodide (FAPbI₃)-based PeLEDs. By combining voltage-dependent electrical stress measurements and ex situ ion distribution analysis of PeLEDs, we found that the electric field-driven migration and local segregation of excess iodide ions, originated from nonstoichiometric precursors, trigger the EQE roll-off via promoting imbalanced charge injection. Based on this discovery, we introduced a simple wash-off treatment with chloroform to remove the excess iodides from the perovskite surface and demonstrated that the treatment is highly effective in suppressing the roll-off behavior. By combining the treatment and the use of an ultrathin poly(methyl methacrylate) (PMMA) interlayer, we achieved a high-brightness PeLED with an EQE_max of 19.6%, a critical current density of 1550 mA cm^-2, and a radiance_max of 875 W sr^-1 m^-2. The study reveals the double-edge sword effect of precursor nonstoichiometry and highlights the importance of managing excess ions in perovskite films.

Unraveling the Charge Transport Mechanism in Mechanochemically Processed Hybrid Perovskite Solar Cell

The long-term operation of organic-inorganic hybrid perovskite solar cells is hampered by the microscopic strain introduced by the multiple thermal cycles during the synthesis of the material via a solution process route. This setback can be eliminated by a room temperature synthesis scheme. In this work, a mechanochemical synthesis technique at room temperature is employed to process CH₃NH₃PbI₂Br films for fabricating perovskite solar cell devices. The solar cell device has produced a 957 mV V_oc, a 16.92 mA/cm² short circuit current density, and a 10.5% efficiency. These values are higher than the published values on mechanochemically synthesized CH₃NH₃PbI₃. The charge transport properties of the devices are studied using DC conductivity and AC impedance spectroscopy, which show a multichannel transport mechanism having both ionic and electronic contributions. A much smaller defect density in the mechanochemically synthesized hybrid perovskite material is confirmed. A polarization assisted recombination mechanism is observed to have a dominant effect on the overall charge transport mechanism. However, no obvious grain boundary and intralayer lattice defect related responses are found in the perovskite layer. Interfacial charge transport and recombination are found to show major effects on both the temperature dependent and illumination dependent impedance spectra.

Materials, photophysics and device engineering of perovskite light-emitting diodes

Here we provide a comprehensive review of a newly developed lighting technology based on metal halide perovskites (i.e. perovskite light-emitting diodes) encompassing the research endeavours into materials, photophysics and device engineering. At the outset we survey the basic perovskite structures and their various dimensions (namely three-, two- and zero-dimensional perovskites), and demonstrate how the compositional engineering of these structures affects the perovskite light-emitting properties. Next, we turn to the physics underpinning photo- and electroluminescence in these materials through their connection to the fundamental excited states, energy/charge transport processes and radiative and non-radiative decay mechanisms. In the remainder of the review, we focus on the engineering of perovskite light-emitting diodes, including the history of their development as well as an extensive analysis of contemporary strategies for boosting device performance. Key concepts include balancing the electron/hole injection, suppression of parasitic carrier losses, improvement of the photoluminescence quantum yield and enhancement of the light extraction. Overall, this review reflects the current paradigm for perovskite lighting, and is intended to serve as a foundation to materials and device scientists newly working in this field.

High-performance quasi-2D perovskite light-emitting diodes: from materials to devices

Quasi-two-dimensional (quasi-2D) perovskites have attracted extraordinary attention due to their superior semiconducting properties and have emerged as one of the most promising materials for next-generation light-emitting diodes (LEDs). The outstanding optical properties originate from their structural characteristics. In particular, the inherent quantum-well structure endows them with a large exciton binding energy due to the strong dielectric- and quantum-confinement effects; the corresponding energy transfer among different n-value species thus results in high photoluminescence quantum yields (PLQYs), particularly at low excitation intensities. The review herein presents an overview of the inherent properties of quasi-2D perovskite materials, the corresponding energy transfer and spectral tunability methodologies for thin films, as well as their application in high-performance LEDs. We then summarize the challenges and potential research directions towards developing high-performance and stable quasi-2D PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of quasi-2D perovskite materials and resulting LED devices.

Vertically Aligned CsPbBr3 Nanowire Arrays with Template-Induced Crystal Phase Transition and Stability

Metal halide perovskites show great promise for a wide range of optoelectronic applications but are plagued by instability when exposed to air and light. This work presents low-temperature solution growth of vertically aligned CsPbBr₃ nanowire arrays in AAO (anodized aluminum oxide) templates with excellent stability, with samples exposed to air for 4 months still exhibiting comparable photoluminescence and UV stability to fresh samples. The single-crystal nanowire length is adjusted from ∼100 nm to 5 μm by adjusting the precursor solution amount and concentration, and we observe length-to-diameter ratios as high as 100. Structural characterization results indicate that large-diameter CsPbBr₃ nanowires have an orthorhombic structure, while the 10 nm- and 20 nm-diameter nanowires adopt a cubic structure. Photoluminescence shows a gradual blue-shift in emission with decreasing nanowire diameter and marginal changes under varying illumination power intensity. The CsPbBr₃-nanowires/AAO composite exhibits excellent resistance to X-ray radiation and long-term air storage, which makes it promising for future optoelectronic applications such as X-ray scintillators. These results show how physical confinement in AAO can be used to realize CsPbBr₃ nanowire arrays and control their morphology and crystal structure.

Micro- and Nanostructured Lead Halide Perovskites: From Materials to Integrations and Devices

In the past decade, lead halide perovskites have been intensively explored due to their promising future in photovoltaics. Owing to their remarkable material properties such as solution processability, nice defect tolerance, broad bandgap tunability, high quantum yields, large refractive index, and strong nonlinear effects, this family of materials has also shown advantages in many other optoelectronic devices including microlasers, photodetectors, waveguides, and metasurfaces. Very recently, the stability of perovskite devices has been improved with the optimization of synthesis methods and device architectures. It is widely accepted that it is the time to integrate all the perovskite devices into a real system. However, for integrated photonic circuits, the shapes and distributions of chemically synthesized perovskites are quite random and not suitable for integration. Consequently, controlled synthesis and the top-down fabrication process are highly desirable to break the barriers. Herein, the developments of patterning and integration techniques for halide perovskites, as well as the structure/function relationships, are systematically reviewed. The recent progress in the study of optical responses originating from nanostructured perovskites is also presented. Lastly, the challenges and perspective for nanostructured-perovskite devices are discussed.

Reducing the impact of Auger recombination in quasi-2D perovskite light-emitting diodes

Rapid Auger recombination represents an important challenge faced by quasi-2D perovskites, which induces resulting perovskite light-emitting diodes' (PeLEDs) efficiency roll-off. In principle, Auger recombination rate is proportional to materials' exciton binding energy (E_b). Thus, Auger recombination can be suppressed by reducing the corresponding materials' E_b. Here, a polar molecule, p-fluorophenethylammonium, is employed to generate quasi-2D perovskites with reduced E_b. Recombination kinetics reveal the Auger recombination rate does decrease to one-order-of magnitude lower compared to its PEA⁺ analogues. After effective passivation, nonradiative recombination is greatly suppressed, which enables resulting films to exhibit outstanding photoluminescence quantum yields in a broad range of excitation density. We herein demonstrate the very efficient PeLEDs with a peak external quantum efficiency of 20.36%. More importantly, devices exhibit a record luminance of 82,480 cd m^-2 due to the suppressed efficiency roll-off, which represent one of the brightest visible PeLEDs yet.

Emerging Light-Emitting Materials for Photonic Integration

The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.

Multifunctional Charge Transporting Materials for Perovskite Light-Emitting Diodes

Despite their low exciton-binding energies, metal halide perovskites are extensively studied as light-emitting materials owing to narrow emission with high color purity, easy/wide color tunability, and high photoluminescence quantum yields. To improve the efficiency of perovskite light-emitting diodes (PeLEDs), much effort has been devoted to controlling the emitting layer morphologies to induce charge confinement and decrease the nonradiative recombination. The interfaces between the emitting layer and charge transporting layer (CTL) are vulnerable to various defects that deteriorate the efficiency and stability of the PeLEDs. Therefore, the establishment of multifunctional CTLs that can improve not only charge transport but also critical factors that influence device performance, such as defect passivation, morphology/phase control, ion migration suppression, and light outcoupling efficiency, are highly required. Herein, the fundamental limitations of perovskites as emitters (i.e., defects, morphological and phase instability, high refractive index with poor outcoupling) and the recent developments with regard to multifunctional CTLs to compensate such limitations are summarized, and their device applications are also reviewed. Finally, based on the importance of multifunctional CTLs, the outlook and research prospects of multifunctional CTLs for the further improvement of PeLEDs are discussed.

Structural, Electronic, and Optical Properties of CsPb(Br1-xClx)3 Perovskite: First-Principles Study with PBE-GGA and mBJ-GGA Methods

The effect of halide composition on the structural, electronic, and optical properties of CsPb(Br1-xClx)3 perovskite was investigated in this study. When the chloride (Cl) content of x was increased, the unit cell volume decreased with a linear function. Theoretical X-ray diffraction analyses showed that the peak (at 2θ = 30.4°) shifts to a larger angle (at 2θ = 31.9°) when the average fraction of the incorporated Cl increased. The energy bandgap (Eg) was observed to increase with the increase in Cl concentration. For x = 0.00, 0.25, 0.33, 0.50, 0.66, 0.75, and 1.00, the Eg values calculated using the Perdew-Burke-Ernzerhof potential were between 1.53 and 1.93 eV, while those calculated using the modified Becke-Johnson generalized gradient approximation (mBJ-GGA) potential were between 2.23 and 2.90 eV. The Eg calculated using the mBJ-GGA method best matched the experimental values reported. The effective masses decreased with a concentration increase of Cl to 0.33 and then increased with a further increase in the concentration of Cl. Calculated photoabsorption coefficients show a blue shift of absorption at higher Cl content. The calculations indicate that CsPb(Br1-xClx)3 perovskite could be used in optical and optoelectronic devices by partly replacing bromide with chloride.

Realizing CsPbBr3 Light-Emitting Diode Arrays Based on PDMS Template Confined Solution Growth of Single-Crystalline Perovskite

Metal-halide perovskites have shown excellent optoelectronic properties, among which the array-type architecture is highly desirable. However, both the susceptibility of perovskites to polar solvents and the complex 3D geometry of array structure have led to great challenges for device fabrication and performance, which hinders their further applications. Here, we report a simple but efficient approach highly compatible with the state-of-the-art microelectronics processes to construct single-crystalline array light-emitting diodes (LEDs) of perovskite. The well-aligned single-crystalline array was sandwiched as the emission layer, among the carefully designed multilayer ITO/NiO/CsPbBr₃/PMMA/ZnO/Ag structure. Through systematically altering the size of CsPbBr₃ single crystal and the thickness of insulation layer, the device performance has been optimized and eventually achieved a 99% working ratio in a 62 × 47 array. Moreover, a prototype device of LED display was also fabricated. These results clearly demonstrate that our strategy is efficient, reliable, and versatile, which can be easily extended to other perovskites.

Improved light extraction in all-inorganic perovskite light-emitting devices with periodic nanostructures by nanoimprinting lithography

We report an improved light extraction in all-inorganic perovskite light-emitting devices (PeLEDs) by integrating a periodic corrugated nanostructure at the metallic cathode/organic interface. Nanoimprinting lithography was used to introduce the nanostructures onto the surface of the electron transport layer directly to avoid influencing the morphology and crystallinity of the perovskite film underneath. The trapped energy at the metallic electrode has been successfully outcoupled by the excitation of the surface plasma polariton (SPP) modes induced by the periodic corrugations. The luminance and current efficiency of the periodically corrugated PeLED exhibit enhancements of 42% and 28%, respectively, compared to those of the planar PeLED. The finite-difference time-domain simulation was used to confirm the efficient outcoupling of the SPP modes.

Effect of emitter orientation on the outcoupling efficiency of perovskite light-emitting diodes

Metal halide perovskite light-emitting diodes (PeLEDs) have experienced a rapid advancement in the last several years with the external quantum efficiencies (EQEs) reaching over 20%, comparable to the state-of-the-art organic LEDs and quantum dot LEDs. The photoluminescence quantum yields of perovskite films have also been approaching 100%. Therefore, the next step to improving the EQE of PeLEDs should be focused on boosting light extraction. In this Letter, we demonstrate the emitter dipole orientation as a key parameter in determining the outcoupling efficiency of PeLEDs. We find that the CsPbBr₃ emitter has a slightly preferred orientation with the horizontal-to-vertical dipole ratio of 0.41:0.59, as compared to 0.33:0.67 in the isotropic case. A theoretical analysis predicts that a purely anisotropic perovskite emitter may result in a maximum EQE of 36%.

Micro- and Nanopatterning of Halide Perovskites Where Crystal Engineering for Emerging Photoelectronics Meets Integrated Device Array Technology

Tremendous efforts have been devoted to developing thin film halide perovskites (HPs) for use in high-performance photoelectronic devices, including solar cells, displays, and photodetectors. Furthermore, structured HPs with periodic micro- or nanopatterns have recently attracted significant interest due to their potential to not only improve the efficiency of an individual device via the controlled arrangement of HP crystals into a confined geometry, but also to technologically pixelate the device into arrays suitable for future commercialization. However, micro- or nanopatterning of HPs is not usually compatible with conventional photolithography, which is detrimental to ionic HPs and requires special techniques. Herein, a comprehensive overview of the state-of-the-art technologies used to develop micro- and nanometer-scale HP patterns, with an emphasis on their controlled microstructures based on top-down and bottom-up approaches, and their potential for future applications, is provided. Top-down approaches include modified conventional lithographic techniques and soft-lithographic methods, while bottom-up approaches include template-assisted patterning of HPs based on lithographically defined prepatterns and self-assembly. HP patterning is shown here to not only improve device performance, but also to reveal the unprecedented functionality of HPs, leading to new research areas that utilize their novel photophysical properties.

Rational Interface Engineering for Efficient Flexible Perovskite Light-Emitting Diodes

Although perovskite light-emitting diodes (PeLEDs) are promising for next-generation displays and lighting, their efficiency is still considerably below that of conventional inorganic and organic counterparts. Significant efforts in various aspects of the electroluminescence process are required to achieve high-performance PeLEDs. Here, we present an improved flexible PeLED structure based on the rational interface engineering for energy-efficient photon generation and enhanced light outcoupling. The interface-stimulated crystallization and defect passivation of the perovskite emitter are synergistically realized by tuning the underlying interlayer, leading to the suppression of trap-mediated nonradiative recombination losses. Besides approaching highly emissive perovskite layers, the outcoupling of trapped light is also enhanced by combining the silver nanowires-based electrode with quasi-random nanopatterns on flexible plastic substrate. Upon the collective optimization of the device structure, a record external quantum efficiency of 24.5% is achieved for flexible PeLEDs based on green-emitting CsPbBr₃ perovskite.

Light extraction from quantum dot light emitting diodes by multiscale nanostructures

Improving the light extraction efficiency by introducing optical-functional structures outside of quantum dot light emitting diodes (QLEDs) for further enhancing the external quantum efficiency (EQE) is essential for their application in display and lighting industries. Although the efficiency of QLEDs has been optimized by controlling the synthesis of the quantum dots, the low outcoupling efficiency is indeed unresolved because of total internal reflections, waveguides and metal surface absorptions within the device. Here, we utilize multiscale nanostructures attached to the outer surface of the glass substrate to extract the trapped light from the emitting layers of QLEDs. The result indicates that both the EQE and luminance are improved from 12.29% to 17.94% and 122 400 cd m^-2 to 178 700 cd m^-2, respectively. The maximum EQE and current efficiency improve to 21.3% and 88.3 cd A^-1, respectively, which are the best performances among reported green QLEDs with light outcoupling nanostructures. The improved performance is ascribed to the elimination of total internal reflection by multiscale nanostructures attached to the outer surface of the QLEDs. Additionally, the simulation results of the finite-difference time domain (FDTD) also demonstrate that the light trapping effect is reduced by the multiscale nanostructures. The design of novel light outcoupling nanostructures for further improving the efficiency of QLEDs can promote their application in display and lighting industries.

Directional Light Emission from Layered Metal Halide Perovskite Crystals

Metal halide perovskites are being increasingly explored for use in light-emitting diodes (LEDs), with achievements in efficiency and brightness charted across the spectrum. One path to further boosting the fraction of useful photons generated by injected electrical charges will be to tailor the emission patterns of devices. Here we investigate directional emission from layered metal halide perovskites. We quantify the proportion of in-plane versus out-of-plane transition dipole components for a suite of layered perovskites. We find that certain perovskite single crystals have highly anisotropic emissions and up to 90% of their transition dipole in-plane. For thin films, emission anisotropy increases as the nominal layer thickness decreases and is generally greater with butylammonium cations than with phenethylammonium cations. Numerical simulations reveal that anisotropic emission from layered perovskites in thin-film LEDs may lead to external quantum efficiencies of 45%, an absolute gain of 13% over equivalent films with isotropic emitters.

Superior Stability and Emission Quantum Yield (23% ± 3%) of Single-Layer 2D Tin Perovskite TEA2 SnI4 via Thiocyanate Passivation

Tin-based perovskite, which exhibits narrower bandgap and comparable photophysical properties to its lead analogs, is one of the most forward-looking lead-free semiconductor materials. However, the poor oxidative stability of tin perovskite hinders the development toward practical application. In this work, the effect of pseudohalide anions on the stability and emission properties of single-layer 2D tin perovskite nanoplates with chemical formula TEA₂ SnI₄ (TEA = 2-thiophene-ethylammonium) is reported. The results reveal that ammonium thiocyanate (NH₄ SCN) is the most effective additive in enhancing the stability and photoluminescence quantum yield of 2D TEA₂ SnI₄ (23 ± 3%). X-Ray photoelectron spectroscopic investigations on the thiocyanate passivated TEA₂ SnI₄ nanoplate show less than a 1% increase of Sn⁴⁺ signal upon 30 min exposure to air under ambient conditions (298 K, humidity ≈70%). Furthermore, no noticeable decrease in emission intensity of the nanoplate is observed after 20 h in air. The SCN^- passivation during the growth stage of TEA₂ SnI₄ is proposed to play a crucial role in preventing the oxidation of Sn²⁺ and hence boosts both stability and photoluminescence yield of tin perovskite nanoplates.