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Zhang W, Pan X, Yan J, Liu L, Nie A, Cheng Y, Wen F, Mu C, Zhai K, Xiang J, Wang B, Xue T, Liu Z. High-Active Surface of Centimeter-Scale β-In 2S 3 for Attomolar-Level Hg 2+ Sensing. NANO LETTERS 2024. [PMID: 39321144 DOI: 10.1021/acs.nanolett.4c04047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/27/2024]
Abstract
Recognition layer materials play a crucial role in the functionality of chemical sensors. Although advancements in two-dimensional (2D) materials have promoted sensor development, the controlled fabrication of large-scale recognition layers with highly active sites remains crucial for enhancing sensor sensitivity, especially for trace detection applications. Herein, we propose a strategy for the controlled preparation of centimeter-scale non-layered ultrathin β-In2S3 materials with tailored high-active sites to design ultrasensitive Hg2+ sensors. Our results reveal that the highly active sites of non-layered β-In2S3 materials are pivotal for achieving superior sensing performance. Selective detection of Hg2+ at the 1 aM level is achieved via selective Hg-S bonding. Additionally, we evaluate that this sensor exhibits excellent performance in detecting Hg2+ in the tap water matrix. This work provides a proof-of-concept for utilizing non-layered 2D films in high-performance sensors and highlights their potential for diverse analyte sensing applications.
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Affiliation(s)
- Weixuan Zhang
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Xuanlin Pan
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Junxin Yan
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Lixuan Liu
- Institute of Quantum Materials and Devices, School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China
| | - Anmin Nie
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Yingchun Cheng
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Fusheng Wen
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Congpu Mu
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Kun Zhai
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Jianyong Xiang
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Bochong Wang
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Tianyu Xue
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Zhongyuan Liu
- Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
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2
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Han W, Zhang T, Zhao P, Yang L, Cheng M, Yang L, Shi J, Chen Y. Anomalous Raman Response in 2D Magnetic FeTe Under Uniaxial Strain: Tetragonal and Hexagonal Polymorphs. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400987. [PMID: 39295489 DOI: 10.1002/smll.202400987] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 09/09/2024] [Indexed: 09/21/2024]
Abstract
2D Fe-chalcogenides emerge with rich structures, magnetisms, and superconductivities, which spark the growing research interests in the torturous transition mechanism and tunable properties for their potential applications in nanoelectronics. Uniaxial strain can produce a lattice distortion to study symmetry breaking induced exotic properties in 2D magnets. Herein, the anomalous Raman spectrum of 2D tetragonal (t-) and hexagonal (h-) FeTe is systematically investigated via uniaxial strain engineering strategy. It is found that both t- and h-FeTe keep the structural stability under different uniaxial tensile or compressive strain up to ± 0.4%. Intriguingly, the lattice vibrations along both in-plane and out-of-plane directions exceptionally harden (softened) under tensile (compressive) strain, distinguished from the behaviors of many conventional 2D systems. Further, the difference in thickness-dependent strain effect can be well explained by their structural discrepancy between two polymorphs of FeTe. These results can supply a unique platform to explore the vibrational properties of many novel 2D materials.
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Affiliation(s)
- Wuxiao Han
- Beijing Institute of Technology, Zhuhai Beijing Institute of Technology (BIT), Zhuhai, 519088, P. R. China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Tiansong Zhang
- Beijing Institute of Technology, Zhuhai Beijing Institute of Technology (BIT), Zhuhai, 519088, P. R. China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Pengcheng Zhao
- Beijing Institute of Technology, Zhuhai Beijing Institute of Technology (BIT), Zhuhai, 519088, P. R. China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Longfei Yang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Lina Yang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yabin Chen
- Beijing Institute of Technology, Zhuhai Beijing Institute of Technology (BIT), Zhuhai, 519088, P. R. China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing, 400030, China
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3
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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4
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Davoudi Tanha S, Modarresi M, Roknabadi MR, Hu T, Mogulkoc A. The antiferromagnetic phase of a wurtzite nickel sulfide monolayer. Phys Chem Chem Phys 2024; 26:22403-22412. [PMID: 39140172 DOI: 10.1039/d4cp01823k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
Two-dimensional intrinsic long-range magnetic monolayers with high transition temperatures have attracted great interest in both fundamental studies and practical applications. In this study, we use a combination of first-principles calculations based on density functional theory (DFT), and unitary transformation of the effective Heisenberg model to investigate the electronic structure and magnetic properties of a [NiS]2 monolayer. The phonon calculations reveal that the [NiS]2 monolayer is dynamically stable in the wurtzite phase. This material is an out-of-plane easy-axis antiferromagnetically ordered monolayer with the Néel temperature close to room temperature. The intrinsic AFM ground state arises from the presence of top and bottom FM sublattices coupled together via AFM coupling, in which the net magnetic moment of each Ni atom is evaluated as 0.5μB. The spectrum of the spin-wave of [NiS]2 is investigated within the spin-wave theory of antiferromagnets in terms of the first-order Holstein-Primakoff approximation of the anisotropic Heisenberg model combined with the Bogoliubov diagonalization transformation. For the long wavelength limit, the magnon dispersion shows linear behavior with the wave vector, which is expected for conventional antiferromagnetism. The magnon velocity of approximately ∼600 m s-1 is predicted for the [NiS]2 monolayer by calculating the slope of the magnon spectrum. Due to strong spin-orbit coupling, the [NiS]2 monolayer has relatively large magnetic anisotropy energy, causing the existence of the 12 meV gap at the Γ point in the magnon spectrum. The magnon energy gap limits the number of thermally excited states, which is essential for maintaining intrinsic long-range antiferromagnetic order in two dimensions.
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Affiliation(s)
- S Davoudi Tanha
- Department of Physics, Faculty of Science, Ferdowsi University of Mashhad, Mashhad, Iran.
| | - M Modarresi
- Department of Physics, Faculty of Science, Ferdowsi University of Mashhad, Mashhad, Iran.
| | - M R Roknabadi
- Department of Physics, Faculty of Science, Ferdowsi University of Mashhad, Mashhad, Iran.
| | - T Hu
- School of Materials Science and Engineering, State Key Laboratory of Advanced Special Steels, Shanghai University, Shanghai 200444, China.
| | - A Mogulkoc
- Department of Physics, Faculty of Sciences, Ankara University, 06100 Tandogan, Ankara, Turkey
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5
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Chen AH, Lu Q, Hershkovitz E, Crespillo ML, Mazza AR, Smith T, Ward TZ, Eres G, Gandhi S, Mahfuz MM, Starchenko V, Hattar K, Lee JS, Kim H, Moore RG, Brahlek M. Interfacially Enhanced Superconductivity in Fe(Te,Se)/Bi 4Te 3 Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401809. [PMID: 38717569 DOI: 10.1002/adma.202401809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 04/19/2024] [Indexed: 06/06/2024]
Abstract
Realizing topological superconductivity by integrating high-transition-temperature (TC) superconductors with topological insulators can open new paths for quantum computing applications. Here, a new approach is reported for increasing the superconducting transition temperature( T C onset ) $( {T_{\mathrm{C}}^{{\mathrm{onset}}}} )$ by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system in the low-Se doping regime, near where superconductivity vanishes in the bulk. The critical finding is that theT C onset $T_{\mathrm{C}}^{{\mathrm{onset}}}$ of Fe(Te,Se) increases from nominally non-superconducting to as high as 12.5 K when Bi2Te3 is replaced with the topological phase Bi4Te3. Interfacing Fe(Te,Se) with Bi4Te3 is also found to be critical for stabilizing superconductivity in monolayer films whereT C onset $T_{\mathrm{C}}^{{\mathrm{onset}}}$ can be as high as 6 K. Measurements of the electronic and crystalline structure of the Bi4Te3 layer reveal that a large electron transfer, epitaxial strain, and novel chemical reduction processes are critical factors for the enhancement of superconductivity. This novel route for enhancing TC in an important epitaxial system provides new insight on the nature of interfacial superconductivity and a platform to identify and utilize new electronic phases.
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Affiliation(s)
- An-Hsi Chen
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Qiangsheng Lu
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Eitan Hershkovitz
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Miguel L Crespillo
- Department Nuclear Engineering, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Alessandro R Mazza
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Tyler Smith
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - T Zac Ward
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Gyula Eres
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Shornam Gandhi
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Meer Muhtasim Mahfuz
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Vitalii Starchenko
- Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Khalid Hattar
- Department Nuclear Engineering, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Joon Sue Lee
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Honggyu Kim
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Robert G Moore
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Matthew Brahlek
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
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6
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Jia Z, Chen Q, Wang W, Sun R, Li Z, Hübner R, Zhou S, Cai M, Lv W, Yu Z, Zhang F, Zhao M, Tian S, Liu L, Zeng Z, Jiang Y, Wang Z. Multi-Level Switching of Spin-Torque Ferromagnetic Resonance in 2D Magnetite. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401944. [PMID: 38704733 PMCID: PMC11234467 DOI: 10.1002/advs.202401944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Revised: 04/08/2024] [Indexed: 05/07/2024]
Abstract
2D magnetic materials hold substantial promise in information storage and neuromorphic device applications. However, achieving a 2D material with high Curie temperature (TC), environmental stability, and multi-level magnetic states remains a challenge. This is particularly relevant for spintronic devices, which require multi-level resistance states to enhance memory density and fulfil low power consumption and multi-functionality. Here, the synthesis of 2D non-layered triangular and hexagonal magnetite (Fe3O4) nanosheets are proposed with high TC and environmental stability, and demonstrate that the ultrathin triangular nanosheets show broad antiphase boundaries (bAPBs) and sharp antiphase boundaries (sAPBs), which induce multiple spin precession modes and multi-level resistance. Conversely, the hexagonal nanosheets display slip bands with sAPBs associated with pinning effects, resulting in magnetic-field-driven spin texture reversal reminiscent of "0" and "1" switching signals. In support of the micromagnetic simulation, direct explanation is offer to the variation in multi-level resistance under a microwave field, which is ascribed to the multi-spin texture magnetization structure and the randomly distributed APBs within the material. These novel 2D magnetite nanosheets with unique spin textures and spin dynamics provide an exciting platform for constructing real multi-level storage devices catering to emerging information storage and neuromorphic computing requirements.
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Affiliation(s)
- Zhiyan Jia
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
- International Iberian Nanotechnology Laboratory (INL)Braga4715‐330Portugal
| | - Qian Chen
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano‐Tech and Nano‐Bionics CASSuzhou215123China
| | - Wenjie Wang
- International Iberian Nanotechnology Laboratory (INL)Braga4715‐330Portugal
- College of ScienceChina Agricultural UniversityBeijing100083China
| | - Rong Sun
- International Iberian Nanotechnology Laboratory (INL)Braga4715‐330Portugal
| | - Zichao Li
- Institute of Ion Beam Physics and Materials ResearchHelmholtz‐Zentrum Dresden‐RossendorfBautzner Landstrasse 400D‐01328DresdenGermany
| | - René Hübner
- Institute of Ion Beam Physics and Materials ResearchHelmholtz‐Zentrum Dresden‐RossendorfBautzner Landstrasse 400D‐01328DresdenGermany
| | - Shengqiang Zhou
- Institute of Ion Beam Physics and Materials ResearchHelmholtz‐Zentrum Dresden‐RossendorfBautzner Landstrasse 400D‐01328DresdenGermany
| | - Miming Cai
- Department of PhysicsBeijing Normal UniversityBeijing100875China
| | - Weiming Lv
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano‐Tech and Nano‐Bionics CASSuzhou215123China
| | - Zhipeng Yu
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano‐Tech and Nano‐Bionics CASSuzhou215123China
| | - Fang Zhang
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Mengfan Zhao
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Sen Tian
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Lixuan Liu
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Zhongming Zeng
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano‐Tech and Nano‐Bionics CASSuzhou215123China
| | - Yong Jiang
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Zhongchang Wang
- International Iberian Nanotechnology Laboratory (INL)Braga4715‐330Portugal
- School of ChemistryBeihang UniversityBeijing100191China
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7
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Sun M, Yang B, Yan J, Zhou Y, Huang Z, Zhang N, Mo R, Ma R. Perovskite CoSn(OH) 6 nanocubes with tuned d-band states towards enhanced oxygen evolution reactions. NANOSCALE 2024; 16:10618-10627. [PMID: 38764380 DOI: 10.1039/d4nr00975d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2024]
Abstract
The CoSn(OH)6 perovskite hydroxide is a structure stable and inexpensive electrocatalyst for the oxygen evolution reaction (OER). However, the OER activity of CoSn(OH)6 is still unfavorable due to its limited active sites. In this work, an Fe3+ doping strategy is used to optimize the d-band state of the CoSn(OH)6 perovskite hydroxide. The CoSn(OH)6 catalyst with slightly Fe3+ doped nanocubes is synthesized by a facile hydrothermal method. Structure characterization shows that Fe3+ ions are incorporated into the crystal structure of CoSn(OH)6. Owing to the regulation of the electronic structure, CoSn(OH)6-Fe1.8% exhibits an OER overpotential of 289 mV at a current density of 10 mA cm-2 in OER electrochemical tests. In situ Raman spectroscopy shows that no obvious re-construction occurred during the OER for both CoSn(OH)6 and CoSn(OH)6-Fe1.8%. DFT calculations show that the introduction of Fe3+ into CoSn(OH)6 can shift the d-band center to a relatively high position, thus promoting the OER intermediates' adsorption ability. Further DFT calculations suggest that incorporation of an appropriate amount of Fe3+ into CoSn(OH)6 significantly reduces the rate-determining Gibbs free energy during the OER. This work offers valuable insights into tuning the d-band center of perovskite hydroxide materials for efficient OER applications.
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Affiliation(s)
- Mingwei Sun
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, P. R. China.
- School of Materials Science and Engineering, Central South University, Changsha 410083, China.
| | - Baopeng Yang
- School of Physics and Electronics, Central South University, Changsha 410083, China
| | - Jiaxing Yan
- School of Materials Science and Engineering, Central South University, Changsha 410083, China.
| | - Yulong Zhou
- School of Materials Science and Engineering, Central South University, Changsha 410083, China.
| | - Zhencong Huang
- School of Materials Science and Engineering, Central South University, Changsha 410083, China.
| | - Ning Zhang
- School of Materials Science and Engineering, Central South University, Changsha 410083, China.
| | - Rong Mo
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, P. R. China.
| | - Renzhi Ma
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
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8
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Liu L, Yu Q, Xia J, Shi W, Wang D, Wu J, Xie L, Chen Y, Jiao L. 2D Air-Stable Nonlayered Ferrimagnetic FeCr 2S 4 Crystals Synthesized via Chemical Vapor Deposition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401338. [PMID: 38506613 DOI: 10.1002/adma.202401338] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2024] [Revised: 03/11/2024] [Indexed: 03/21/2024]
Abstract
The discovery of intrinsic 2D magnetic materials has opened up new opportunities for exploring magnetic properties at atomic layer thicknesses, presenting potential applications in spintronic devices. Here a new 2D ferrimagnetic crystal of nonlayered FeCr2S4 is synthesized with high phase purity using chemical vapor deposition. The obtained 2D FeCr2S4 exhibits perpendicular magnetic anisotropy, as evidenced by the out-of-plane/in-plane Hall effect and anisotropic magnetoresistance. Theoretical calculations further elucidate that the observed magnetic anisotropy can be attributed to its surface termination structure. By combining temperature-dependent magneto-transport and polarized Raman spectroscopy characterizations, it is discovered that both the measured Curie temperature and the critical temperature at which a low energy magnon peak disappeared remains constant, regardless of its thickness. Magnetic force microscopy measurements show the flipping process of magnetic domains. The exceptional air-stability of the 2D FeCr2S4 is also confirmed via Raman spectroscopy and Hall hysteresis loops. The robust anisotropic ferrimagnetism, the thickness-independent of Curie temperature, coupled with excellent air-stability, make 2D FeCr2S4 crystals highly attractive for future spintronic devices.
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Affiliation(s)
- Lei Liu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Qin Yu
- Research Institute of Petroleum Processing, SINOPEC, Beijing, 100083, China
| | - Jing Xia
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Wenxiao Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Dong Wang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
- Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
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9
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Cheng D, Liu J, Wei B. Growth of Quasi-Two-Dimensional CrTe Nanoflakes and CrTe/Transition Metal Dichalcogenide Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:868. [PMID: 38786824 PMCID: PMC11123775 DOI: 10.3390/nano14100868] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 05/09/2024] [Accepted: 05/13/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional (2D) van der Waals layered materials have been explored in depth. They can be vertically stacked into a 2D heterostructure and represent a fundamental way to explore new physical properties and fabricate high-performance nanodevices. However, the controllable and scaled growth of non-layered quasi-2D materials and their heterostructures is still a great challenge. Here, we report a selective two-step growth method for high-quality single crystalline CrTe/WSe2 and CrTe/MoS2 heterostructures by adopting a universal CVD strategy with the assistance of molten salt and mass control. Quasi-2D metallic CrTe was grown on pre-deposited 2D transition metal dichalcogenides (TMDC) under relatively low temperatures. A 2D CrTe/TMDC heterostructure was established to explore the interface's structure using scanning transmission electron microscopy (STEM), and also demonstrate ferromagnetism in a metal-semiconductor CrTe/TMDC heterostructure.
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Affiliation(s)
| | | | - Bin Wei
- School of Materials, Sun Yat-sen University, Shenzhen 518107, China; (D.C.); (J.L.)
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10
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Yang CK, Jiao L. Superconducting Two-Dimensional FeSe Grown on the Fe-Enriched Interface. ACS NANO 2024; 18:12276-12283. [PMID: 38700494 DOI: 10.1021/acsnano.4c00984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
Two-dimensional (2D) tetragonal FeSe has sparked extensive research interest owing to its tunable superconductivity, providing valuable insights into the design of high-temperature superconductors. Currently, the intricate Fe-Se phase diagram poses a challenge to the controlled synthesis of superconducting 2D FeSe in a pure tetragonal phase. Here, we exploit the ion-exchange property of fluorophlogopite mica to devise a straightforward approach for the phase-controlled synthesis of tetragonal FeSe on an Fe-enriched mica surface within a molten salt environment. This method successfully produces highly crystalline FeSe in a pure tetragonal phase with adjustable thickness. We investigated the surface composition of the postgrowth mica substrate using various microscopic and spectroscopic characterizations to highlight the importance of the Fe-enriched growth interface in the phase-selective synthesis of 2D tetragonal FeSe. The obtained 2D FeSe exhibited 2D superconductivity, comparable to that of FeSe mechanically exfoliated from bulk crystals, confirming the high quality of our samples. Beyond tetragonal FeSe, 2D antiferromagnetic FeTe and superconducting FeSxSeyTe1-x-y have been phase-selectively synthesized via this approach. Our study elucidates the significance of the growth interface on the phase-selective synthesis of 2D materials and presents potential opportunities for the phase-controlled synthesis of 2D multiphase materials via the rational design of the growth interface.
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Affiliation(s)
- Chen-Kai Yang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
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11
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Yu Y, Cheng M, Tao Z, Han W, Du G, Guo Y, Shi J, Chen Y. Phase-Modulated Elastic Properties of 2D Magnetic FeTe: Hexagonal and Tetragonal Polymorphs. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308357. [PMID: 38050942 DOI: 10.1002/smll.202308357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Revised: 11/01/2023] [Indexed: 12/07/2023]
Abstract
2D layered magnets, such as iron chalcogenides, have emerged these years as a new family of unconventional superconductors and provided the key insights to understand the phonon-electron interaction and pairing mechanism. Their mechanical properties are of strategic importance for the potential applications in spintronics and optoelectronics. However, there is still a lack of efficient approach to tune the elastic modulus despite the extensive studies. Herein, the modulated elastic modulus of 2D magnetic FeTe and its thickness-dependence is reported via phase engineering. The grown 2D FeTe by chemical vapor deposition can present various polymorphs, that is tetragonal FeTe (t-FeTe, antiferromagnetic) and hexagonal FeTe (h-FeTe, ferromagnetic). The measured Young's modulus of t-FeTe by nanoindentation method shows an obvious thickness-dependence, from 290.9 ± 9.2 to 113.0 ± 8.7 GPa when the thicknesses increased from 13.2 to 42.5 nm, respectively. In comparison, the elastic modulus of h-FeTe remains unchanged. These results can shed light on the efficient modulation of mechanical properties of 2D magnetic materials and pave the avenues for their practical applications in nanodevices.
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Affiliation(s)
- Yunfei Yu
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Zicheng Tao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 200031, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Wuxiao Han
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Guoshuai Du
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 200031, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Yabin Chen
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, P. R. China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing, 400030, P. R. China
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12
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Zhang K, Zhang T, You J, Zheng X, Zhao M, Zhang L, Kong J, Luo Z, Huang S. Low-Temperature Vapor-Phase Growth of 2D Metal Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307587. [PMID: 38084456 DOI: 10.1002/smll.202307587] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 11/07/2023] [Indexed: 05/12/2024]
Abstract
2D metal chalcogenides (MCs) have garnered significant attention from both scientific and industrial communities due to their potential in developing next-generation functional devices. Vapor-phase deposition methods have proven highly effective in fabricating high-quality 2D MCs. Nevertheless, the conventionally high thermal budgets required for synthesizing 2D MCs pose limitations, particularly in the integration of multiple components and in specialized applications (such as flexible electronics). To overcome these challenges, it is desirable to reduce the thermal energy requirements, thus facilitating the growth of various 2D MCs at lower temperatures. Numerous endeavors have been undertaken to develop low-temperature vapor-phase growth techniques for 2D MCs, and this review aims to provide an overview of the latest advances in low-temperature vapor-phase growth of 2D MCs. Initially, the review highlights the latest progress in achieving high-quality 2D MCs through various low-temperature vapor-phase techniques, including chemical vapor deposition (CVD), metal-organic CVD, plasma-enhanced CVD, atomic layer deposition (ALD), etc. The strengths and current limitations of these methods are also evaluated. Subsequently, the review consolidates the diverse applications of 2D MCs grown at low temperatures, covering fields such as electronics, optoelectronics, flexible devices, and catalysis. Finally, current challenges and future research directions are briefly discussed, considering the most recent progress in the field.
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Affiliation(s)
- Kenan Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
| | - Xudong Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Mei Zhao
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
- Hong Kong University of Science and Technology-Shenzhen Research Institute, Nanshan, Shenzhen, 518057, China
| | - Shaoming Huang
- Guangzhou Key Laboratory of Low-Dimensional Materials and Energy Storage Devices, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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13
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Liu C, Zhang S, Hao H, Algaidi H, Ma Y, Zhang XX. Magnetic Skyrmions above Room Temperature in a van der Waals Ferromagnet Fe 3GaTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311022. [PMID: 38290153 DOI: 10.1002/adma.202311022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2023] [Revised: 01/11/2024] [Indexed: 02/01/2024]
Abstract
2D van der Waals (vdW) ferromagnetic crystals are a promising platform for innovative spintronic devices based on magnetic skyrmions, thanks to their high flexibility and atomic thickness stability. However, room-temperature skyrmion-hosting vdW materials are scarce, which poses a challenge for practical applications. In this study, a chemical vapor transport (CVT) approach is employed to synthesize Fe3GaTe2 crystals and room-temperature Néel skyrmions are observed in Fe3GaTe2 nanoflakes above 58 nm in thickness through in situ Lorentz transmission electron microscopy (L-TEM). Upon an optimized field cooling procedure, zero-field hexagonal skyrmion lattices are successfully generated in nanoflakes with an extended thickness range (30-180 nm). Significantly, these skyrmion lattices remain stable up to 355 K, setting a new record for the highest temperature at which skyrmions can be hosted. The research establishes Fe3GaTe2 as an emerging above-room-temperature skyrmion-hosting vdW material, holding great promise for future spintronics.
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Affiliation(s)
- Chen Liu
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Senfu Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - Hongyuan Hao
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - Hanin Algaidi
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xi-Xiang Zhang
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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14
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Jin C, Tang X, Sun Q, Mu C, Krasheninnikov AV, Kou L. Robust Magnetoelectric Coupling in FeTiO 3/Ga 2O 3 Non-van der Waals Heterostructures. J Phys Chem Lett 2024:2650-2657. [PMID: 38422484 DOI: 10.1021/acs.jpclett.4c00029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.
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Affiliation(s)
- Cui Jin
- School of Science, Shandong Jianzhu University, Jinan 250101, China
| | - Xiao Tang
- College of Science, Nanjing Forestry University, Nanjing 210037, China
| | - Qilong Sun
- School of Science, Shandong Jianzhu University, Jinan 250101, China
| | - Chenxi Mu
- School of Science, Shandong Jianzhu University, Jinan 250101, China
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- Department of Applied Physics, Aalto University, P.O. Box 11100, 00076 Aalto, Finland
| | - Liangzhi Kou
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4001, Australia
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15
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Cui F, He K, Wu S, Zhang H, Lu Y, Li Z, Hu J, Pan S, Zhu L, Huan Y, Li B, Duan X, Ji Q, Zhao X, Zhang Y. Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides. ACS NANO 2024; 18:6276-6285. [PMID: 38354364 DOI: 10.1021/acsnano.3c10609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Emerging 2D chromium-based dichalcogenides (CrXn (X = S, Se, Te; 0 < n ≤ 2)) have provoked enormous interests due to their abundant structures, intriguing electronic and magnetic properties, excellent environmental stability, and great application potentials in next generation electronics and spintronics devices. Achieving stoichiometry-controlled synthesis of 2D CrXn is of paramount significance for such envisioned investigations. Herein, we report the stoichiometry-controlled syntheses of 2D chromium selenide (CrxSey) materials (rhombohedral Cr2Se3 and monoclinic Cr3Se4) via a Cr-self-intercalation route by designing two typical chemical vapor deposition (CVD) strategies. We have also clarified the different growth mechanisms, distinct chemical compositions, and crystal structures of the two type materials. Intriguingly, we reveal that the ultrathin Cr2Se3 nanosheets exhibit a metallic feature, while the Cr3Se4 nanosheets present a transition from p-type semiconductor to metal upon increasing the flake thickness. Moreover, we have also uncovered the ferromagnetic properties of 2D Cr2Se3 and Cr3Se4 below ∼70 K and ∼270 K, respectively. Briefly, this research should promote the stoichiometric-ratio controllable syntheses of 2D magnetic materials, and the property explorations toward next generation spintronics and magneto-optoelectronics related applications.
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Affiliation(s)
- Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Kun He
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Shengqiang Wu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Hongmei Zhang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Zhenzhu Li
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies and School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Bo Li
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
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16
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Liu M, Gou J, Liu Z, Chen Z, Ye Y, Xu J, Xu X, Zhong D, Eda G, Wee ATS. Phase-selective in-plane heteroepitaxial growth of H-phase CrSe 2. Nat Commun 2024; 15:1765. [PMID: 38409207 PMCID: PMC10897461 DOI: 10.1038/s41467-024-46087-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Accepted: 02/14/2024] [Indexed: 02/28/2024] Open
Abstract
Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe2. The lattice-matched MoSe2 nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe2 with the formation of MoSe2-CrSe2 heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe2 monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe2 exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.
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Affiliation(s)
- Meizhuang Liu
- School of Physics, Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China.
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore.
| | - Jian Gou
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore
- School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - Zizhao Liu
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zuxin Chen
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
| | - Yuliang Ye
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
| | - Jing Xu
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
| | - Xiaozhi Xu
- School of Physics, Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China
| | - Dingyong Zhong
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Goki Eda
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore.
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17
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Han W, Feng J, Dong H, Cheng M, Yang L, Yu Y, Du G, Li J, Du Y, Zhang T, Wang Z, Chen B, Shi J, Chen Y. Pressure-Modulated Structural and Magnetic Phase Transitions in Two-Dimensional FeTe: Tetragonal and Hexagonal Polymorphs. NANO LETTERS 2024; 24:966-974. [PMID: 38206580 DOI: 10.1021/acs.nanolett.3c04384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Two-dimensional (2D) Fe chalcogenides with their rich structures and properties are highly desirable for revealing the torturous transition mechanism of Fe chalcogenides and exploring their potential applications in spintronics and nanoelectronics. Hydrostatic pressure can effectively stimulate phase transitions between various ordered states, allowing one to successfully plot a phase diagram for a given material. Herein, the structural evolution and transport characteristics of 2D FeTe were systematically investigated under extreme conditions by comparing two distinct symmetries, i.e., tetragonal (t) and hexagonal (h) FeTe. We found that t-FeTe presented a pressure-induced transition from an antiferromagnetic state to a ferromagnetic state at ∼3 GPa, corresponding to the tetragonal collapse of the layered structure. Contrarily, the ferromagnetic order of h-FeTe was retained up to 15 GPa, which was evidently confirmed by electrical transport and Raman measurements. Furthermore, T-P phase diagrams for t-FeTe and h-FeTe were mapped under delicate critical conditions. Our results can provide a unique platform to elaborate the extraordinary properties of Fe chalcogenides and further develop their applications.
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Affiliation(s)
- Wuxiao Han
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jiajia Feng
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Liu Yang
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yunfei Yu
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Guoshuai Du
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jiayin Li
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yubing Du
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Tiansong Zhang
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Zhiwei Wang
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Yabin Chen
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology (ARIMS), Beijing 100081, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 400030, China
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18
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Zhang H, Liu Q, Deng L, Ma Y, Daneshmandi S, Cen C, Zhang C, Voyles PM, Jiang X, Zhao J, Chu CW, Gai Z, Li L. Room-Temperature Ferromagnetism in Epitaxial Bilayer FeSb/SrTiO 3(001) Terminated with a Kagome Lattice. NANO LETTERS 2024; 24:122-129. [PMID: 37913524 PMCID: PMC10786153 DOI: 10.1021/acs.nanolett.3c03415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 10/17/2023] [Accepted: 10/18/2023] [Indexed: 11/03/2023]
Abstract
Two-dimensional (2D) magnets exhibit unique physical properties for potential applications in spintronics. To date, most 2D ferromagnets are obtained by mechanical exfoliation of bulk materials with van der Waals interlayer interactions, and the synthesis of single- or few-layer 2D ferromagnets with strong interlayer coupling remains experimentally challenging. Here, we report the epitaxial growth of 2D non-van der Waals ferromagnetic bilayer FeSb on SrTiO3(001) substrates stabilized by strong coupling to the substrate, which exhibits in-plane magnetic anisotropy and a Curie temperature above 390 K. In situ low-temperature scanning tunneling microscopy/spectroscopy and density-functional theory calculations further reveal that an Fe Kagome layer terminates the bilayer FeSb. Our results open a new avenue for further exploring emergent quantum phenomena from the interplay of ferromagnetism and topology for application in spintronics.
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Affiliation(s)
- Huimin Zhang
- Department
of Physics and Astronomy, West Virginia
University, Morgantown, West Virginia 26506, United States
- State
Key Laboratory of Structural Analysis, Optimization and CAE Software
for Industrial Equipment, Dalian University
of Technology, Dalian, 116024, China
| | - Qinxi Liu
- Key
Laboratory of Materials Modification by Laser, Ion and Electron Beams
(Dalian University of Technology), Ministry
of Education, Dalian 116024, China
| | - Liangzi Deng
- Department
of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas, 77204, United States
| | - Yanjun Ma
- Department
of Physics and Astronomy, West Virginia
University, Morgantown, West Virginia 26506, United States
| | - Samira Daneshmandi
- Department
of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas, 77204, United States
| | - Cheng Cen
- Department
of Physics and Astronomy, West Virginia
University, Morgantown, West Virginia 26506, United States
- Beijing National
Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Chenyu Zhang
- Department
of Materials Science and Engineering, University
of Wisconsin−Madison, Madison, Wisconsin 53706, United States
| | - Paul M. Voyles
- Department
of Materials Science and Engineering, University
of Wisconsin−Madison, Madison, Wisconsin 53706, United States
| | - Xue Jiang
- State
Key Laboratory of Structural Analysis, Optimization and CAE Software
for Industrial Equipment, Dalian University
of Technology, Dalian, 116024, China
- Key
Laboratory of Materials Modification by Laser, Ion and Electron Beams
(Dalian University of Technology), Ministry
of Education, Dalian 116024, China
| | - Jijun Zhao
- State
Key Laboratory of Structural Analysis, Optimization and CAE Software
for Industrial Equipment, Dalian University
of Technology, Dalian, 116024, China
- Key
Laboratory of Materials Modification by Laser, Ion and Electron Beams
(Dalian University of Technology), Ministry
of Education, Dalian 116024, China
| | - Ching-Wu Chu
- Department
of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas, 77204, United States
| | - Zheng Gai
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee, 37831 United States
| | - Lian Li
- Department
of Physics and Astronomy, West Virginia
University, Morgantown, West Virginia 26506, United States
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19
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Yun Q, Ge Y, Shi Z, Liu J, Wang X, Zhang A, Huang B, Yao Y, Luo Q, Zhai L, Ge J, Peng Y, Gong C, Zhao M, Qin Y, Ma C, Wang G, Wa Q, Zhou X, Li Z, Li S, Zhai W, Yang H, Ren Y, Wang Y, Li L, Ruan X, Wu Y, Chen B, Lu Q, Lai Z, He Q, Huang X, Chen Y, Zhang H. Recent Progress on Phase Engineering of Nanomaterials. Chem Rev 2023. [PMID: 37962496 DOI: 10.1021/acs.chemrev.3c00459] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2023]
Abstract
As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.
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Affiliation(s)
- Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Department of Chemical and Biological Engineering & Energy Institute, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yiyao Ge
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Jiawei Liu
- Institute of Sustainability for Chemicals, Energy and Environment, Agency for Science, Technology and Research (A*STAR), Singapore, 627833, Singapore
| | - Xixi Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Biao Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Qinxin Luo
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
| | - Jingjie Ge
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR
| | - Yongwu Peng
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Chengtao Gong
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Meiting Zhao
- Institute of Molecular Aggregation Science, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin 300072, China
| | - Yutian Qin
- Institute of Molecular Aggregation Science, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin 300072, China
| | - Chen Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Gang Wang
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Qingbo Wa
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xichen Zhou
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yi Ren
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Lujing Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xinyang Ruan
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yuxuan Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Bo Chen
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qipeng Lu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Xiao Huang
- Institute of Advanced Materials (IAM), School of Flexible Electronics (SoFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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20
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Li Y, Li A, Li J, Tian H, Zhang Z, Zhu S, Zhang R, Liu S, Cao K, Kang L, Li Q. Efficient Synthesis of Highly Crystalline One-Dimensional CrCl 3 Atomic Chains with a Spin Glass State. ACS NANO 2023; 17:20112-20119. [PMID: 37791779 DOI: 10.1021/acsnano.3c05819] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/05/2023]
Abstract
One-dimensional (1D) magnetic material systems have attracted widespread interest from researchers because of their peculiar physical properties and potential applications in spintronics devices. However, the synthesis of 1D magnetic atomic chains has seldom been investigated. Here, we developed an iodine-assisted vacuum chemical vapor-phase transport (I-VCVT) method, utilizing single-walled carbon nanotubes (SWCNTs) with 1D cavities as templates, and high-quality and high-efficiency fabrication of 1D atomic chains of CrCl3 was achieved. Furthermore, the structure of CrCl3 atomic chains in the confined space of SWCNTs was analyzed in detail, and the charge transfer between the 1D atomic chains and SWCNTs was investigated through spectroscopic characterization. A comprehensive study of the dynamic magnetic properties revealed the existence of spin glass states and freezing of the 1D CrCl3 atomic chains at around 3 K, which has never been seen in bulk CrCl3. Our work established an effective strategy for the control synthesis of 1D magnetic atomic chains with promising potential applications in further magnetic-based spintronics devices.
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Affiliation(s)
- Yunfei Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Alei Li
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Jing Li
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Haiquan Tian
- Shandong Provincial Key Laboratory of Chemical Energy Storage and Novel Cell Technology, School of Chemistry and Chemical Engineering, Liaocheng University, Liaocheng 252059, China
| | - Zhen Zhang
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Siqi Zhu
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Rong Zhang
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Shuai Liu
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Kecheng Cao
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China
| | - Lixing Kang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Qingwen Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Jiang J, Xiong F, Sun L, Chen H, Zhu M, Xu W, Zhang J, Zhu Z. Reversible Amorphous-Crystalline Phase Transformation in an Ultrathin van der Waals FeTe System. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47661-47668. [PMID: 37783452 DOI: 10.1021/acsami.3c07765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/04/2023]
Abstract
Searching for new phase-change materials for memory and neuromorphic device applications and further understanding the phase transformation mechanism are attracting wide attention. Phase transformation from the amorphous phase to the crystal phase has been unraveled in iron telluride (FeTe) bulk film deposited by pulsed laser deposition, recently. However, the van der Waals-layered feature of FeTe in the crystal form was not noted, which will benefit the scaling of the memory devices and shine light on phase-change heterostructures or interfacial phase-change materials. Moreover, the demonstration of advanced memory or neuromorphic device applications is lacking. Here, we investigate the phase transformation of FeTe starting from mechanically exfoliated van der Waals layers from a bulk single crystal. Surficial amorphization is revealed at the surface layers of FeTe flakes after exfoliation under ambient conditions, which could be transformed back to the crystalline phase with laser irradiation or heating. The conductance drop of the flake devices near 400 K verifies the phase transformation electrically. Memristor behavior of the amorphous surface in FeTe has been further demonstrated, proving the reversibility of the phase transformation and shining light on the possible applications of neuromorphic devices.
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Affiliation(s)
- Jinbao Jiang
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Feng Xiong
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Linfeng Sun
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Haitao Chen
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Wei Xu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Jianfa Zhang
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Zhihong Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
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22
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Feng X, Zhai B, Cheng R, Yin L, Wen Y, Jiang J, Wang H, Li Z, Zhu Y, He J. Phase Engineering of 2D Spinel-Type Manganese Oxides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304118. [PMID: 37437137 DOI: 10.1002/adma.202304118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Revised: 07/10/2023] [Accepted: 07/10/2023] [Indexed: 07/14/2023]
Abstract
2D magnetic materials have been of interest due to their unique long-range magnetic ordering in the low-dimensional regime and potential applications in spintronics. Currently, most studies are focused on strippable van der Waals magnetic materials with layered structures, which typically suffer from a poor stability and scarce species. Spinel oxides have a good environmental stability and rich magnetic properties. However, the isotropic bonding and close-packed nonlayered crystal structure make their 2D growth challenging, let alone the phase engineering. Herein, a phase-controllable synthesis of 2D single-crystalline spinel-type oxides is reported. Using the van der Waals epitaxy strategy, the thicknesses of the obtained tetragonal and hexagonal manganese oxide (Mn3 O4 ) nanosheets can be tuned down to 7.1 nm and one unit cell (0.7 nm), respectively. The magnetic properties of these two phases are evaluated using vibrating-sample magnetometry and first-principle calculations. Both structures exhibit a Curie temperature of 48 K. Owing to its ultrathin geometry, the Mn3 O4 nanosheet exhibits a superior ultraviolet detection performance with an ultralow noise power density of 0.126 pA Hz-1/2 . This study broadens the range of 2D magnetic semiconductors and highlights their potential applications in future information devices.
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Affiliation(s)
- Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhongwei Li
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yushan Zhu
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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23
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Lv H, da Silva A, Figueroa AI, Guillemard C, Aguirre IF, Camosi L, Aballe L, Valvidares M, Valenzuela SO, Schubert J, Schmidbauer M, Herfort J, Hanke M, Trampert A, Engel-Herbert R, Ramsteiner M, Lopes JMJ. Large-Area Synthesis of Ferromagnetic Fe 5- x GeTe 2 /Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302387. [PMID: 37231567 DOI: 10.1002/smll.202302387] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Revised: 05/10/2023] [Indexed: 05/27/2023]
Abstract
Van der Waals (vdW) heterostructures combining layered ferromagnets and other 2D crystals are promising building blocks for the realization of ultracompact devices with integrated magnetic, electronic, and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing for realizing highly uniform heterostructures with well-defined interfaces between different 2D-layered materials. It is also required that each material component of the heterostructure remains functional, which ideally includes ferromagnetic order above room temperature for 2D ferromagnets. Here, it is demonstrated that the large-area growth of Fe5- x GeTe2 /graphene heterostructures is achieved by vdW epitaxy of Fe5- x GeTe2 on epitaxial graphene. Structural characterization confirms the realization of a continuous vdW heterostructure film with a sharp interface between Fe5- x GeTe2 and graphene. Magnetic and transport studies reveal that the ferromagnetic order persists well above 300 K with a perpendicular magnetic anisotropy. In addition, epitaxial graphene on SiC(0001) continues to exhibit a high electronic quality. These results represent an important advance beyond nonscalable flake exfoliation and stacking methods, thus marking a crucial step toward the implementation of ferromagnetic 2D materials in practical applications.
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Affiliation(s)
- Hua Lv
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, 10117, Berlin, Germany
| | - Alessandra da Silva
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, 10117, Berlin, Germany
| | - Adriana I Figueroa
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Charles Guillemard
- ALBA Synchrotron Light Source, Cerdanyola del Valles, Barcelona, 08290, Spain
| | - Iván Fernández Aguirre
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Spain
- Universitat Autònoma de Barcelona, Bellaterra, Barcelona, 08193, Spain
| | - Lorenzo Camosi
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Lucia Aballe
- ALBA Synchrotron Light Source, Cerdanyola del Valles, Barcelona, 08290, Spain
| | - Manuel Valvidares
- ALBA Synchrotron Light Source, Cerdanyola del Valles, Barcelona, 08290, Spain
| | - Sergio O Valenzuela
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Spain
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, 08010, Spain
| | - Jürgen Schubert
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich, 52425, Jülich, Germany
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, 52425, Jülich, Germany
| | | | - Jens Herfort
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, 10117, Berlin, Germany
| | - Michael Hanke
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, 10117, Berlin, Germany
| | - Achim Trampert
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, 10117, Berlin, Germany
| | - Roman Engel-Herbert
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, 10117, Berlin, Germany
| | - Manfred Ramsteiner
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, 10117, Berlin, Germany
| | - Joao Marcelo J Lopes
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, 10117, Berlin, Germany
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24
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Zhang Z, Dong X, Chen J, Liu Z, Gao Z, Chang X, Du Y, Jia C, Fu H, Luo F, Wu J. Transferred Polymer-Encapsulated Metal Electrodes for Electrical Transport Measurements on Ultrathin Air-Sensitive Crystals. SMALL METHODS 2023; 7:e2300177. [PMID: 37287373 DOI: 10.1002/smtd.202300177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Revised: 05/29/2023] [Indexed: 06/09/2023]
Abstract
Owing to rapid property degradation after ambient exposure and incompatibility with conventional device fabrication process, electrical transport measurements on air-sensitive 2D materials have always been a big issue. Here, for the first time, a facile one-step polymer-encapsulated electrode transfer (PEET) method applicable for fragile 2D materials is developed, which showed great advantages of damage-free electrodes patterning and in situ polymer encapsulation preventing from H2 O/O2 exposure during the whole electrical measurements process. The ultrathin SmTe2 metals grown by chemical vapor deposition (CVD) are chosen as the prototypical air-sensitive 2D crystals for their poor air-stability, which will become highly insulating when fabricated by conventional lithographic techniques. Nevertheless, the intrinsic electrical properties of CVD-grown SmTe2 nanosheets can be readily investigated by the PEET method instead, showing ultralow contact resistance and high signal/noise ratio. The PEET method can be applicable to other fragile ultrathin magnetic materials, such as (Mn,Cr)Te, to investigate their intrinsic electrical/magnetic properties.
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Affiliation(s)
- Zheshan Zhang
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Xinyue Dong
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Jiabiao Chen
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Zhaochao Liu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Zhansheng Gao
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Xinyue Chang
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Yaping Du
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Chuancheng Jia
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Huixia Fu
- Center of Quantum Materials and Devices & College of Physics, Chongqing University, Chongqing, 401331, China
| | - Feng Luo
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Jinxiong Wu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
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25
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Pang K, Xu X, Wei Y, Ying T, Gao B, Li W, Jiang Y. Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers. NANOSCALE 2023; 15:13420-13427. [PMID: 37547928 DOI: 10.1039/d3nr02188b] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/08/2023]
Abstract
The lack of macroscopic magnetic moments makes antiferromagnetic materials promising candidates for high-speed spintronic devices. The 2D ternary V-based chalcogenides (VXYSe4; X, Y = Al, Ga) monolayers are investigated based on the density-functional theory and Monte Carlo simulations. The results reveal that the Néel temperature of the VGa2Se4 monolayer is 18 K with zigzag2-antiferromagnetic (AFM) spin ordering. Also, the magnetic ordering of V ions in VAl2Se4 and VAlGaSe4 monolayers prefer zigzag1-AFM coupling with Néel temperature of 47 K and 33 K, respectively. The magnetic anisotropy calculations demonstrate that the easy magnetization axis of the VXYSe4 monolayers is parallel to the y axis. In addition, the VXYSe4 monolayers can be adjusted from the AFM state to the ferromagnetic (FM) state under biaxial stretching, which can be attributed to the competition between d-p-d superexchange and d-d direct exchange caused by the variation of bond length. The transition temperature of VXYSe4 monolayers can be elevated above room temperature with the help of compression strain. In particular, the in-plane magnetic anisotropy is a robust characteristic regardless of the magnitude of the applied biaxial strain. These explorations not only enrich the family of AFM monolayers with excellent stability but also provide distinctive ideas for the performance control of AFM materials and their applications in nanodevices.
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Affiliation(s)
- Kaijuan Pang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China.
| | - Xiaodong Xu
- School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Yadong Wei
- School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Tao Ying
- School of Physics, Harbin Institute of Technology, Harbin 150001, China.
| | - Bo Gao
- School of Physics, Harbin Institute of Technology, Harbin 150001, China.
| | - Weiqi Li
- School of Physics, Harbin Institute of Technology, Harbin 150001, China.
| | - Yongyuan Jiang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
- Key Lab of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin 150001, China
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26
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Wang G, Hu T, Xiong Y, Liu X, Shen S, Wang J, Che M, Cui Z, Zhang Y, Yang L, Li Z, Lu Y, Tian M. Electric-field control of reversible electronic and magnetic transitions in two-dimensional oxide monolayer magnets. Sci Bull (Beijing) 2023; 68:1632-1639. [PMID: 37429776 DOI: 10.1016/j.scib.2023.06.038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Revised: 05/27/2023] [Accepted: 06/25/2023] [Indexed: 07/12/2023]
Abstract
Atomically thin oxide magnetic materials are highly desirable due to the promising potential to integrate two-dimensional (2D) magnets into next-generation spintronics. Therefore, 2D oxide magnetism is expected to be effectively tuned by the magnetic and electrical fields, holding prospective for future low-dissipation electronic devices. However, the electric-field control of 2D oxide monolayer magnetism has rarely been reported. Here, we present the realization of 2D monolayer magnetism in oxide (SrRuO3)1/(SrTiO3)N (N = 1, 3) superlattices that shows an efficient and reversible phase transition through electric-field controlled proton (H+) evolution. By using ionic liquid gating to modulate the proton concentration in (SrRuO3)1/(SrTiO3)1 superlattice, an electric-field induced metal-insulator transition was observed, along with gradually suppressed magnetic ordering and modulated magnetic anisotropy. Theoretical analysis reveals that proton intercalation plays a crucial role in both electronic and magnetic phase transitions. Strikingly, SrTiO3 layers can act as a proton sieve, which have a significant influence on proton evolution. Our work stimulates the tuning functionality of 2D oxide monolayer magnetism by voltage control, providing potential for future energy-efficient electronics.
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Affiliation(s)
- Guopeng Wang
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China.
| | - Tao Hu
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Yimin Xiong
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China; Hefei National Laboratory, Hefei 230028, China
| | - Xue Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Shengchun Shen
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jianlin Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China; Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Mengqian Che
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zhangzhang Cui
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China; Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China.
| | - Yingying Zhang
- State Key Laboratory for New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
| | - Luyi Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zhengcao Li
- State Key Laboratory for New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yalin Lu
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China; Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Mingliang Tian
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China.
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27
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Wang B, Yao Y, Hong W, Hong Z, He X, Wang T, Jian C, Ju Q, Cai Q, Sun Z, Liu W. The Controllable Synthesis of High-Quality Two-Dimensional Iron Sulfide with Specific Phases. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207325. [PMID: 36919484 DOI: 10.1002/smll.202207325] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2022] [Revised: 02/20/2023] [Indexed: 06/08/2023]
Abstract
2D Fe-chalcogenides have drawn significant attention due to their unique structural phases and distinct properties in exploring magnetism and superconductivity. However, it remains a significant challenge to synthesize 2D Fe-chalcogenides with specific phases in a controllable manner since Fe-chalcogenides have multiple phases. Herein, a molecular sieve-assisted strategy is reported for synthesizing ultrathin 2D iron sulfide on substrates via the chemical vapor deposition method. Using a molecular sieve and tuning growth temperatures to control the partial pressures of precursor concentrations, hexagonal FeS, tetragonal FeS, and non-stoichiometric Fe7 S8 nanoflakes can be precisely synthesized. The 2D h-FeS, t-FeS, and Fe7 S8 have high conductivities of 5.4 × 105 S m-1 , 5.8 × 105 S m-1 , and 1.9 × 106 S m-1 . 2D tetragonal FeS shows a superconducting transition at 4 K. The spin reorientation at ≈30 K on the non-stoichiometric Fe7 S8 nanoflakes with ferrimagnetism up to room temperature has also been observed. The controllable synthesis of various phases of 2D iron sulfide may provide a route for synthesizing other 2D compounds with various phases.
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Affiliation(s)
- Bicheng Wang
- College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Yu Yao
- College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Wenting Hong
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Zhaoan Hong
- College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Xu He
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Taiku Wang
- College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Chuanyong Jian
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Qiankun Ju
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Qian Cai
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Zhihua Sun
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Wei Liu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
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28
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Wang H, Wen Y, Zhao X, Cheng R, Yin L, Zhai B, Jiang J, Li Z, Liu C, Wu F, He J. Heteroepitaxy of 2D CuCr 2 Te 4 with Robust Room-temperature Ferromagnetism. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211388. [PMID: 36780341 DOI: 10.1002/adma.202211388] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 01/21/2023] [Indexed: 05/05/2023]
Abstract
Magnetic materials in 2D have attracted widespread attention for their intriguing magnetic properties. 2D magnetic heterostructures can provide unprecedented opportunities for exploring fundamental physics and novel spintronic devices. Here, the heteroepitaxial growth of ferromagnetic CuCr2 Te4 nanosheets is reported on Cr2 Te3 and mica by chemical vapor deposition. Magneto-optical Kerr effect measurements reveal the thickness-dependent ferromagnetism of CuCr2 Te4 nanosheets on mica, where a decrease of Curie temperature (TC ) from 320 to 260 K and an enhancement of perpendicular magnetic anisotropy with reducing thickness are observed. Moreover, lattice-matched heteroepitaxial ultrathin CuCr2 Te4 on Cr2 Te3 exhibits an enhanced robust ferromagnetism with TC up to 340 K due to the interfacial charge transfer. Stripe-type magnetic domains and single magnetic domain are discovered in this heterostructure with different thicknesses. The work provides a way to construct robust room-temperature 2D magnetic heterostructures for functional spintronic devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhongwei Li
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Fengcheng Wu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, P. R. China
- International College, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Hubei Luojia Laboratory, Wuhan, 430072, P. R. China
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29
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department
of Chemistry, Faculty of Science, University
of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
- Functional
Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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30
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Zhou J, Zhu C, Zhou Y, Dong J, Li P, Zhang Z, Wang Z, Lin YC, Shi J, Zhang R, Zheng Y, Yu H, Tang B, Liu F, Wang L, Liu L, Liu GB, Hu W, Gao Y, Yang H, Gao W, Lu L, Wang Y, Suenaga K, Liu G, Ding F, Yao Y, Liu Z. Composition and phase engineering of metal chalcogenides and phosphorous chalcogenides. NATURE MATERIALS 2023; 22:450-458. [PMID: 35739274 DOI: 10.1038/s41563-022-01291-5] [Citation(s) in RCA: 34] [Impact Index Per Article: 34.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2021] [Accepted: 05/17/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) materials with multiphase, multielement crystals such as transition metal chalcogenides (TMCs) (based on V, Cr, Mn, Fe, Cd, Pt and Pd) and transition metal phosphorous chalcogenides (TMPCs) offer a unique platform to explore novel physical phenomena. However, the synthesis of a single-phase/single-composition crystal of these 2D materials via chemical vapour deposition is still challenging. Here we unravel a competitive-chemical-reaction-based growth mechanism to manipulate the nucleation and growth rate. Based on the growth mechanism, 67 types of TMCs and TMPCs with a defined phase, controllable structure and tunable component can be realized. The ferromagnetism and superconductivity in FeXy can be tuned by the y value, such as superconductivity observed in FeX and ferromagnetism in FeS2 monolayers, demonstrating the high quality of as-grown 2D materials. This work paves the way for the multidisciplinary exploration of 2D TMPCs and TMCs with unique properties.
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Affiliation(s)
- Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.
- Chongqing Center for Microelectronics and Microsystems, Beijing Institute of Technology, Chongqing, People's Republic of China.
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, People's Republic of China
| | - Yao Zhou
- Advanced Research Institute of Multidisciplinary Science, and School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Jichen Dong
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, Republic of Korea
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Peiling Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Zhaowei Zhang
- School of Physical and Mathematical Science, Nanyang Technological University, Singapore, Singapore
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, People's Republic of China
| | - Yung-Chang Lin
- The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
| | - Jia Shi
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Runwu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China
| | - Yanzhen Zheng
- Beijing Key Laboratory of Green Recovery and Extraction of Rare and Precious Metals, University of Science and Technology Beijing, Beijing, People's Republic of China
| | - Huimei Yu
- School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, People's Republic of China
| | - Bijun Tang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, People's Republic of China
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, People's Republic of China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Gui-Bin Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, People's Republic of China
| | - Yanfeng Gao
- School of Materials Science and Engineering, Shanghai University, Shanghai, People's Republic of China
| | - Haitao Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Weibo Gao
- School of Physical and Mathematical Science, Nanyang Technological University, Singapore, Singapore
| | - Li Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- Songshan Lake Materials Laboratory, Guangdong, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, People's Republic of China.
| | - Kazu Suenaga
- The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
| | - Guangtong Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- Songshan Lake Materials Laboratory, Guangdong, China
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Korea
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
- CINTRA CNRS/NTU/THALES, Research Techno Plaza, Singapore, Singapore.
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
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31
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Yang W, Yang J, Shin HS. Phase- and composition-controlled synthesis. NATURE MATERIALS 2023; 22:421-422. [PMID: 35739275 DOI: 10.1038/s41563-022-01301-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Affiliation(s)
- Weiguang Yang
- Department of Chemistry and Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
| | - Jieun Yang
- Department of Chemistry and Research Institute of Basic Sciences, Kyung Hee University, Seoul, Republic of Korea.
| | - Hyeon Suk Shin
- Department of Chemistry and Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.
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32
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Yang Y, Jia L, Wang D, Zhou J. Advanced Strategies in Synthesis of Two-Dimensional Materials with Different Compositions and Phases. SMALL METHODS 2023; 7:e2201585. [PMID: 36739597 DOI: 10.1002/smtd.202201585] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/28/2022] [Indexed: 06/18/2023]
Abstract
In recent years, 2D materials-Ma Xb with different compositions and phases have attracted tremendous attention due to their diverse structures and electronic features. The common thermodynamically stable 2H and metastable 1T phases have been extensively studied, however, there are many unusual compositions and phases with novel physical properties that have yet to be explored. Therefore, summarization of the synthesis strategies, atomic structures, and the unique physical properties of 2D materials with different compositions and phases is very important for their development. In this review, the strategies including chemical vapor deposition, intercalation, atomic layer deposition, chemical vapor transport, and electrostatic gating for synthesizing various 2D materials with different phases and compositions are first summarized. Specially, the intercalation strategies including heterogeneous- and self-intercalation for controllable phases and compositions fabrication are mainly discussed. Then, the novel atomic structures of 2D materials are analyzed, followed by the fascinating physical properties including ferroelectricity, ferromagnetism, superconductivity, and so on. Finally, the conclusion and outlook are offered including the challenges and future prospects of 2D materials with different compositions and phases.
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Affiliation(s)
- Yang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Lin Jia
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dainan Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- MIIT Key Laboratory of Complex-field Intelligent Exploration, Beijing Institute of Technology, Beijing, 100081, China
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33
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Niu Y, Zhang K, Cui X, Wu X, Yang J. Two-Dimensional Iron Silicide (FeSi x) Alloys with Above-Room-Temperature Ferromagnetism. NANO LETTERS 2023; 23:2332-2338. [PMID: 36897107 DOI: 10.1021/acs.nanolett.3c00113] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials with intrinsic room-temperature ferromagnetism have gathered tremendous interest as promising candidates for next-generation spintronics. Here, on the basis of first-principles calculations, we report a family of stable 2D iron silicide (FeSix) alloys via dimensional reduction of their bulk counterparts. Our results demonstrate that 2D Fe4Si2-hex, Fe4Si2-orth, Fe3Si2, and FeSi2 nanosheets are lattice-dynamically and thermally stable, confirmed by the calculated phonon spectra and Born-Oppenheimer dynamic simulation up to 1000 K. 2D FeSix nanosheets are ferromagnetic metals with estimated Curie temperatures ranging from 547 to 971 K due to strong direct exchange interaction between Fe sites. In addition, the electronic properties of 2D FeSix alloys can be maintained on silicon substrates, providing an ideal platform for spintronics applications in the nanoscale.
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Affiliation(s)
- Yijie Niu
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Kai Zhang
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xuefeng Cui
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Xiaojun Wu
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jinlong Yang
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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34
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Wang P, Ge J, Luo J, Wang H, Song L, Li Z, Yang J, Wang Y, Du R, Feng W, Wang J, He J, Shi J. Interisland-Distance-Mediated Growth of Centimeter-Scale Two-Dimensional Magnetic Fe 3O 4 Arrays with Unidirectional Domain Orientations. NANO LETTERS 2023; 23:1758-1766. [PMID: 36790274 DOI: 10.1021/acs.nanolett.2c04535] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) nanosheet arrays with unidirectional orientations are of great significance for synthesizing wafer-scale single crystals. Although great efforts have been devoted, the growth of atomically thin magnetic nanosheet arrays and single crystals is still unaddressed. Here we design an interisland-distance-mediated chemical vapor deposition strategy to synthesize centimeter-scale atomically thin Fe3O4 arrays with unidirectional orientations on mica. The unidirectional alignment of nearly all the Fe3O4 nanosheets is driven by a dual-coupling-guided growth mechanism. The Fe3O4/mica interlayer interaction induces two preferred antiparallel orientations, whereas the interisland interaction of Fe3O4 breaks the energy degeneracy of antiparallel orientations. The room-temperature long-range ferrimagnetic order and thickness-tunable magnetic domain evolution are uncovered in atomically thin Fe3O4. This strategy to tune the orientations of nanosheets through the an interisland interaction can guide the synthesis of other 2D transition-metal oxides, thereby laying a solid foundation for future spintronic device applications at the integration level.
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Affiliation(s)
- Peng Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun Ge
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Jiawei Luo
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Zhongwei Li
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
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35
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Choudhary K, Gurunathan R, DeCost B, Biacchi A. AtomVision: A Machine Vision Library for Atomistic Images. J Chem Inf Model 2023; 63:1708-1722. [PMID: 36857727 DOI: 10.1021/acs.jcim.2c01533] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/03/2023]
Abstract
Computer vision techniques have immense potential for materials design applications. In this work, we introduce an integrated and general-purpose AtomVision library that can be used to generate and curate microscopy image (such as scanning tunneling microscopy and scanning transmission electron microscopy) data sets and apply a variety of machine learning techniques. To demonstrate the applicability of this library, we (1) establish an atomistic image data set of about 10 000 materials with large structural and chemical diversity, (2) develop and compare convolutional and atomistic line graph neural network models to classify the Bravais lattices, (3) demonstrate the application of fully convolutional neural networks using U-Net architecture to pixelwise classify atom versus background, (4) use a generative adversarial network for super resolution, (5) curate an image data set on the basis of natural language processing using an open-access arXiv data set, and (6) integrate the computational framework with experimental microscopy images for Rh, Fe3O4, and SnS systems. The AtomVision library is available at https://github.com/usnistgov/atomvision.
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Affiliation(s)
- Kamal Choudhary
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Ramya Gurunathan
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Brian DeCost
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Adam Biacchi
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
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36
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Pant D, Pokharel S, Mandal S, KC DB, Pati R. DFT-aided machine learning-based discovery of magnetism in Fe-based bimetallic chalcogenides. Sci Rep 2023; 13:3277. [PMID: 36841922 PMCID: PMC9968303 DOI: 10.1038/s41598-023-30438-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2022] [Accepted: 02/23/2023] [Indexed: 02/27/2023] Open
Abstract
With the technological advancement in recent years and the widespread use of magnetism in every sector of the current technology, a search for a low-cost magnetic material has been more important than ever. The discovery of magnetism in alternate materials such as metal chalcogenides with abundant atomic constituents would be a milestone in such a scenario. However, considering the multitude of possible chalcogenide configurations, predictive computational modeling or experimental synthesis is an open challenge. Here, we recourse to a stacked generalization machine learning model to predict magnetic moment (µB) in hexagonal Fe-based bimetallic chalcogenides, FexAyB; A represents Ni, Co, Cr, or Mn, and B represents S, Se, or Te, and x and y represent the concentration of respective atoms. The stacked generalization model is trained on the dataset obtained using first-principles density functional theory. The model achieves MSE, MAE, and R2 values of 1.655 (µB)2, 0.546 (µB), and 0.922 respectively on an independent test set, indicating that our model predicts the compositional dependent magnetism in bimetallic chalcogenides with a high degree of accuracy. A generalized algorithm is also developed to test the universality of our proposed model for any concentration of Ni, Co, Cr, or Mn up to 62.5% in bimetallic chalcogenides.
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Affiliation(s)
- Dharmendra Pant
- grid.259979.90000 0001 0663 5937Department of Physics, Michigan Technological University, Houghton, MI 49931 USA
| | - Suresh Pokharel
- grid.259979.90000 0001 0663 5937Department of Computer Science, Michigan Technological University, Houghton, MI 49931 USA
| | - Subhasish Mandal
- grid.268154.c0000 0001 2156 6140Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506 USA
| | - Dukka B. KC
- grid.259979.90000 0001 0663 5937Department of Computer Science, Michigan Technological University, Houghton, MI 49931 USA
| | - Ranjit Pati
- Department of Physics, Michigan Technological University, Houghton, MI, 49931, USA. .,Henes Center for Quantum Phenomena, Michigan Technological University, Houghton, MI, 49931, USA.
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37
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Zhao Z, Fang Z, Han X, Yang S, Zhou C, Zeng Y, Zhang B, Li W, Wang Z, Zhang Y, Zhou J, Zhou J, Ye Y, Hou X, Zhao X, Gao S, Hou Y. A general thermodynamics-triggered competitive growth model to guide the synthesis of two-dimensional nonlayered materials. Nat Commun 2023; 14:958. [PMID: 36810290 PMCID: PMC9944324 DOI: 10.1038/s41467-023-36619-5] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/29/2022] [Accepted: 02/08/2023] [Indexed: 02/23/2023] Open
Abstract
Two-dimensional (2D) nonlayered materials have recently provoked a surge of interest due to their abundant species and attractive properties with promising applications in catalysis, nanoelectronics, and spintronics. However, their 2D anisotropic growth still faces considerable challenges and lacks systematic theoretical guidance. Here, we propose a general thermodynamics-triggered competitive growth (TTCG) model providing a multivariate quantitative criterion to predict and guide 2D nonlayered materials growth. Based on this model, we design a universal hydrate-assisted chemical vapor deposition strategy for the controllable synthesis of various 2D nonlayered transition metal oxides. Four unique phases of iron oxides with distinct topological structures have also been selectively grown. More importantly, ultra-thin oxides display high-temperature magnetic ordering and large coercivity. MnxFeyCo3-x-yO4 alloy is also demonstrated to be a promising room-temperature magnetic semiconductor. Our work sheds light on the synthesis of 2D nonlayered materials and promotes their application for room-temperature spintronic devices.
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Affiliation(s)
- Zijing Zhao
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China ,grid.11135.370000 0001 2256 9319Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871 China
| | - Zhi Fang
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Xiaocang Han
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Shiqi Yang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Cong Zhou
- grid.43169.390000 0001 0599 1243Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Yi Zeng
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Biao Zhang
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Wei Li
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Zhan Wang
- grid.9227.e0000000119573309Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
| | - Ying Zhang
- grid.9227.e0000000119573309Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
| | - Jian Zhou
- grid.43169.390000 0001 0599 1243Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Jiadong Zhou
- grid.43555.320000 0000 8841 6246Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing, 100081 China
| | - Yu Ye
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Xinmei Hou
- grid.69775.3a0000 0004 0369 0705Innovation Research Institute for Carbon Neutrality, University of Science and Technology Beijing, Beijing, 100083 China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China.
| | - Song Gao
- grid.79703.3a0000 0004 1764 3838Institute of Spin-X Science and Technology, South China University of Technology, Guangzhou, 510641 China
| | - Yanglong Hou
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China. .,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China.
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38
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Zhang ZM, Gong BC, Nie JH, Meng F, Zhang Q, Gu L, Liu K, Lu ZY, Fu YS, Zhang W. Self-Intercalated 1T-FeSe 2 as an Effective Kagome Lattice. NANO LETTERS 2023; 23:954-961. [PMID: 36706049 DOI: 10.1021/acs.nanolett.2c04362] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In kagome lattice, with the emergence of Dirac cones and flat band in electronic structure, it provides a versatile ground for exploring intriguing interplay among frustrated geometry, topology and correlation. However, such engaging interest is strongly limited by available kagome materials in nature. Here we report on a synthetic strategy of constructing kagome systems via self-intercalation of Fe atoms into the van der Waals gap of FeSe2 via molecular beam epitaxy. Using low-temperature scanning tunneling microscopy, we unveil a kagome-like morphology upon intercalating a 2 × 2 ordered Fe atoms, resulting in a stoichiometry of Fe5Se8. Both the bias-dependent STM imaging and theoretical modeling calculations suggest that the kagome pattern mainly originates from slight but important reconstruction of topmost Se atoms, incurred by the nonequivalent subsurface Fe sites due to the intercalation. Our study demonstrates an alternative approach of constructing artificial kagome structures, which envisions to be tuned for exploring correlated quantum states.
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Affiliation(s)
- Zhi-Mo Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan430074, China
| | - Ben-Chao Gong
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing100872, China
| | - Jin-Hua Nie
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan430074, China
| | - Fanqi Meng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P.R. China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P.R. China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, P.R. China
| | - Kai Liu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing100872, China
| | - Zhong-Yi Lu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing100872, China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan430074, China
| | - Wenhao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan430074, China
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39
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Yu M, Hu Z, Zhou J, Lu Y, Guo W, Zhang Z. Retrieving Grain Boundaries in 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205593. [PMID: 36461686 DOI: 10.1002/smll.202205593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Revised: 11/13/2022] [Indexed: 06/17/2023]
Abstract
The coalescence of randomly distributed grains with different crystallographic orientations can result in pervasive grain boundaries (GBs) in 2D materials during their chemical synthesis. GBs not only are the inherent structural imperfection that causes influential impacts on structures and properties of 2D materials, but also have emerged as a platform for exploring unusual physics and functionalities stemming from dramatic changes in local atomic organization and even chemical makeup. Here, recent advances in studying the formation mechanism, atomic structures, and functional properties of GBs in a range of 2D materials are reviewed. By analyzing the growth mechanism and the competition between far-field strain and local chemical energies of dislocation cores, a complete understanding of the rich GB morphologies as well as their dependence on lattice misorientations and chemical compositions is presented. Mechanical, electronic, and chemical properties tied to GBs in different materials are then discussed, towards raising the concept of using GBs as a robust atomic-scale scaffold for realizing tailored functionalities, such as magnetism, luminescence, and catalysis. Finally, the future opportunities in retrieving GBs for making functional devices and the major challenges in the controlled formation of GB structures for designed applications are commented.
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Affiliation(s)
- Maolin Yu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Zhili Hu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
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40
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Jiang S, Wang G, Deng H, Liu K, Yang Q, Zhao E, Zhu L, Guo W, Yang J, Zhang C, Wang H, Zhang X, Dai JF, Luo G, Zhao Y, Lin J. General Synthesis of 2D Magnetic Transition Metal Dihalides via Trihalide Reduction. ACS NANO 2023; 17:363-371. [PMID: 36576433 DOI: 10.1021/acsnano.2c08693] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) transition metal dihalides (TMDHs) have been receiving extensive attention due to their diversified magnetic properties and promising applications in spintronics. However, controlled growth of 2D TMDHs remains challenging owing to their extreme sensitivity to atmospheric moisture. Herein, using a home-built nitrogen-filled interconnected glovebox system, a universal chemical vapor deposition synthesis route of high-quality 2D TMDH flakes (1T-FeCl2, FeBr2, VCl2, and VBr2) by reduction of their trihalide counterparts is developed. Representatively, ultrathin (∼8.6 nm) FeCl2 flakes are synthesized on SiO2/Si, while on graphene/Cu foil the thickness can be down to monolayer (1L). Reflective magnetic circular dichroism spectroscopy shows an interlayer antiferromagnetic ordering of FeCl2 with a Neel temperature at ∼17 K. Scanning tunneling microscopy and spectroscopy further identify the atomic-scale structures and band features of 1L and bilayer FeCl2 on graphene/Cu foil.
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Affiliation(s)
- Shaolong Jiang
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Gang Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Hanbing Deng
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
| | - Kai Liu
- Department of Materials Science and Engineering and Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen518055, China
| | - Qishuo Yang
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Erding Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Liang Zhu
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Weiteng Guo
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Jing Yang
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Cheng Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen518055, China
| | - Heshen Wang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen518055, China
| | - Xi Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen518055, China
| | - Jun-Feng Dai
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen518055, China
| | - Guangfu Luo
- Department of Materials Science and Engineering and Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen518055, China
| | - Yue Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
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41
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Huan Y, Luo T, Han X, Ge J, Cui F, Zhu L, Hu J, Zheng F, Zhao X, Wang L, Wang J, Zhang Y. Composition-Controllable Syntheses and Property Modulations from 2D Ferromagnetic Fe 5 Se 8 to Metallic Fe 3 Se 4 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207276. [PMID: 36263871 DOI: 10.1002/adma.202207276] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
Exploring new-type 2D magnetic materials with high magnetic transition temperature and robust air stability has attracted wide attention for developing innovative spintronic devices. Recently, intercalation of native metal atoms into the van der Waals gaps of 2D layered transition metal dichalcogenides (TMDs) has been developed to form 2D non-layered magnetic TMDs, while only succeeded in limited systems (e.g., Cr2 S3 , Cr5 Te8 ). Herein, composition-controllable syntheses of 2D non-layered iron selenide nanosheets (25% Fe-intercalated triclinic Fe5 Se8 and 50% Fe-intercalated monoclinic Fe3 Se4 ) are firstly reported, via a robust chemical vapor deposition strategy. Specifically, the 2D Fe5 Se8 exhibits intrinsic room-temperature ferromagnetic property, which is explained by the change of electron spin states from layered 1T'-FeSe2 to non-layered Fe-intercalated Fe5 Se8 based on density functional theory calculations. In contrast, the ultrathin Fe3 Se4 presents novel metallic features comparable with that of metallic TMDs. This work hereby sheds light on the composition-controllable synthesis and fundamental property exploration of 2D self-intercalation induced novel TMDs compounds, by propelling their application explorations in nanoelectronics and spintronics-related fields.
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Affiliation(s)
- Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Tiantian Luo
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Xiaocang Han
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jun Ge
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Feipeng Zheng
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lili Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
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42
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Two-dimensional multiferroic material of metallic p-doped SnSe. Nat Commun 2022; 13:6130. [PMID: 36253483 PMCID: PMC9576753 DOI: 10.1038/s41467-022-33917-2] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 10/07/2022] [Indexed: 11/08/2022] Open
Abstract
Two-dimensional multiferroic materials have garnered broad interests attributed to their magnetoelectric properties and multifunctional applications. Multiferroic heterostructures have been realized, nevertheless, the direct coupling between ferroelectric and ferromagnetic order in a single material still remains challenging, especially for two-dimensional materials. Here, we develop a physical vapor deposition approach to synthesize two-dimensional p-doped SnSe. The local phase segregation of SnSe2 microdomains and accompanying interfacial charge transfer results in the emergence of degenerate semiconductor and metallic feature in SnSe. Intriguingly, the room-temperature ferrimagnetism has been demonstrated in two-dimensional p-doped SnSe with the Curie temperature approaching to ~337 K. Meanwhile, the ferroelectricity is maintained even under the depolarizing field introduced by SnSe2. The coexistence of ferrimagnetism and ferroelectricity in two-dimensional p-doped SnSe verifies its multiferroic feature. This work presents a significant advance for exploring the magnetoelectric coupling in two-dimensional limit and constructing high-performance logic devices to extend Moore’s law. 2D multiferroic materials have garnered broad interests due to their magnetoelectric properties and multifunctional applications. Here, the authors discover a multiferroic feature in physical vapor deposition synthesized 2D metallic p-doped SnSe.
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43
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Cheng R, Yin L, Wen Y, Zhai B, Guo Y, Zhang Z, Liao W, Xiong W, Wang H, Yuan S, Jiang J, Liu C, He J. Ultrathin ferrite nanosheets for room-temperature two-dimensional magnetic semiconductors. Nat Commun 2022; 13:5241. [PMID: 36068242 PMCID: PMC9448765 DOI: 10.1038/s41467-022-33017-1] [Citation(s) in RCA: 28] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Accepted: 08/26/2022] [Indexed: 11/23/2022] Open
Abstract
The discovery of magnetism in ultrathin crystals opens up opportunities to explore new physics and to develop next-generation spintronic devices. Nevertheless, two-dimensional magnetic semiconductors with Curie temperatures higher than room temperature have rarely been reported. Ferrites with strongly correlated d-orbital electrons may be alternative candidates offering two-dimensional high-temperature magnetic ordering. This prospect is, however, hindered by their inherent three-dimensional bonded nature. Here, we develop a confined-van der Waals epitaxial approach to synthesizing air-stable semiconducting cobalt ferrite nanosheets with thickness down to one unit cell using a facile chemical vapor deposition process. The hard magnetic behavior and magnetic domain evolution are demonstrated by means of vibrating sample magnetometry, magnetic force microscopy and magneto-optical Kerr effect measurements, which shows high Curie temperature above 390 K and strong dimensionality effect. The addition of room-temperature magnetic semiconductors to two-dimensional material family provides possibilities for numerous novel applications in computing, sensing and information storage.
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Affiliation(s)
- Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yuzheng Guo
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, 430072, China
| | - Zhaofu Zhang
- The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, China
| | - Weitu Liao
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Wenqi Xiong
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Shengjun Yuan
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China.
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44
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Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Tokmachev AM, Storchak VG. 2D magnetic phases of Eu on Ge(110). NANOSCALE 2022; 14:12377-12385. [PMID: 35972030 DOI: 10.1039/d2nr02777a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
2D magnetic materials are at the forefront of research on fundamentals of magnetism; they exhibit unconventional phases and properties controlled by external stimuli. 2D magnets offer a solution to the problem of miniaturization of spintronic devices. A technological target of materials science is to find suitable magnetic materials and scale their thickness down as much as possible, a single monolayer being a natural limit. However, magnetism does not halt at one monolayer - it may persist beyond this boundary, to sparse but regular lattices of magnetic atoms. Here, we report 2D magnetic phases of Eu on the Ge(110) surface. We synthesized two submonolayer structures Eu/Ge(110) employing molecular beam epitaxy. The phases, identified by electron diffraction, differ in the surface density of Eu atoms. At low temperature, they exhibit magnetic ordering with magnetic moments lying in-plane. Strong dependence of the effective magnetic transition temperature on weak magnetic fields points at the 2D nature of the observed magnetism. The results are set against those on the Eu/Si system. The study of Eu/Ge(110) magnets demonstrates that a variety of substrates of different structure and symmetry can host submonolayer 2D magnetic phases, suggesting the phenomenon to be rather general.
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Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
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45
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Xuan X, Guo W, Zhang Z. Ferroelasticity in Two-Dimensional Tetragonal Materials. PHYSICAL REVIEW LETTERS 2022; 129:047602. [PMID: 35939029 DOI: 10.1103/physrevlett.129.047602] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2020] [Revised: 09/30/2021] [Accepted: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Ferroelasticity is a prominent material property analogous to ferroelectricity and ferromagnetism, but its characteristic spontaneous structural polarization has remained less studied and poorly understood. Here, we use a high-throughput computation approach in conjunction with first-principles calculations to identify 65 (M=transition metal, X=nonmetal) monolayers exhibiting in-plane ferroelasticity out of 166 stable tetragonal monolayers. Molecular orbital theory analysis reveals that ferroelastic distortion arises when M-d/X-p and M-d/M-d couplings are both sufficiently weak. We have developed a physically interpretable one-dimensional descriptor that correctly predicts 89% of ferroelastics or nonferroelastics among the examined MX monolayers. Moreover, we find eleven MX compounds that exhibit strongly coupled ferroelasticity and magnetism driven by strain-controlled magnetocrystalline anisotropy, raising the prospects of developing 2D ferroelasticity-based multiferroics.
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Affiliation(s)
- Xiaoyu Xuan
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Zhuhua Zhang
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
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46
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Xuan X, Zhang Z, Chen C, Guo W. Robust Quantum Anomalous Hall States in Monolayer and Few-Layer TiTe. NANO LETTERS 2022; 22:5379-5384. [PMID: 35776156 DOI: 10.1021/acs.nanolett.2c01421] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Quantum anomalous Hall (QAH) insulators possess exotic properties driven by novel topological physics, but related studies and potential applications have been hindered by the ultralow temperatures required to sustain the operating mechanisms dictated by key material parameters. Here, using first-principles calculations, we predict a robust QAH state in monolayer TiTe that exhibits a high ferromagnetic Curie temperature of 650 K and a sizable band gap of 261 meV. These outstanding benchmark properties stem from the Te atom's large size that favors ferromagnetic kinetic exchange with the neighboring Ti atoms and strong spin-orbit coupling that creates a QAH state by adding a mass term to the Dirac half-semimetal state. Remarkably, the ferromagnetic order remains robust against interlayer stacking via the d-pz/py-pz-d super-super exchange, generating unprecedented QAH states in few-layer configurations with enhanced Curie temperatures and higher Chern numbers. These results signify layered TiTe to be a prime template for exploring novel QAH physics at ambient and higher temperatures.
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Affiliation(s)
- Xiaoyu Xuan
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
| | - Zhuhua Zhang
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
| | - Changfeng Chen
- Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
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47
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Tan J, Zhang Z, Zeng S, Li S, Wang J, Zheng R, Hou F, Wei Y, Sun Y, Zhang R, Zhao S, Nong H, Chen W, Gan L, Zou X, Zhao Y, Lin J, Liu B, Cheng HM. Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies. Sci Bull (Beijing) 2022; 67:1649-1658. [DOI: 10.1016/j.scib.2022.06.022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Revised: 05/14/2022] [Accepted: 06/20/2022] [Indexed: 10/17/2022]
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48
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Jin Z, Ji Z, Zhong Y, Jin Y, Hu X, Zhang X, Zhu L, Huang X, Li T, Cai X, Zhou L. Controlled Synthesis of a Two-Dimensional Non-van der Waals Ferromagnet toward a Magnetic Moiré Superlattice. ACS NANO 2022; 16:7572-7579. [PMID: 35443128 DOI: 10.1021/acsnano.1c11018] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) magnetic materials provide an ideal platform for spintronics, magnetoelectrics, and numerous intriguing physical phenomena in 2D limits. Moiré superlattices based on 2D magnets offer an avenue for controlling the spin degree of freedom and engineering magnetic properties. However, the synthesis of high-quality, large-grain, and stable 2D magnets, much less obtaining a magnetic moiré superlattice, is still challenging. We synthesize 2D ferromagnets (trigonal Cr5Te8) with controlled thickness and robust stability through chemical vapor deposition. Single-unit-cell-thick flakes with lateral sizes of tens of micrometers are obtained. We observe the layer-by-layer growth mode for the crystal formation in non-van der Waals Cr5Te8. The robust anomalous Hall signal confirms that Cr5Te8 of varying thickness have a long-range ferromagnetic order with an out-of-plane easy axis. There is no obvious change of the Curie temperature when the thickness of Cr5Te8 decreases from 52.1 to 7.2 nm. Here, we construct diverse 2D non-van der Waals/van der Waals vertical heterostructures (Cr5Te8/graphene, Cr5Te8/h-BN, Cr5Te8/MoS2). A uniform moiré superlattice is formed in the heterostructure through a lattice mismatch. The successful growth of 2D Cr5Te8 and a related moiré superlattice introduces 2D non-van der Waals ferromagnets into moiré superlattice research, thus highlighting prospects for property investigation of a non-van der Waals magnetic moiré superlattice and massive applications which require a scalable approach to magnetic moiré superlattices.
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Affiliation(s)
- Zhitong Jin
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zijie Ji
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yunlei Zhong
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yunmin Jin
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xianyu Hu
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xingxing Zhang
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Lijing Zhu
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xianhui Huang
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Key Laboratory of Electrical Insulation and Thermal Aging, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Tao Li
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Key Laboratory of Electrical Insulation and Thermal Aging, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xinghan Cai
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Lin Zhou
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
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49
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Wang P, Wen Y, Zhao X, Zhai B, Du R, Cheng M, Liu Z, He J, Shi J. Controllable Synthesis Quadratic-Dependent Unsaturated Magnetoresistance of Two-Dimensional Nonlayered Fe 7S 8 with Robust Environmental Stability. ACS NANO 2022; 16:8301-8308. [PMID: 35467830 DOI: 10.1021/acsnano.2c02267] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) iron chalcogenides (FeX, X = S, Se, Te) are emerging as an appealing class of materials for a wide range of research topics, including electronics, spintronics, and catalysis. However, the controlled syntheses and intrinsic property explorations of such fascinating materials still remain daunting challenges, especially for 2D nonlayered Fe7S8 with mixed-valence states and high conductivity. Herein, we design a general and temperature-mediated chemical vapor deposition (CVD) approach to synthesize ultrathin and large-domain Fe7S8 nanosheets on mica substrates, with the thickness down to ∼4.4 nm (2 unit-cell). Significantly, we uncover a quadratic-dependent unsaturated magnetoresistance (MR) with out-of-plane anisotropy in 2D Fe7S8, thanks to its ultrahigh crystalline quality and high conductivity (∼2.7 × 105 S m-1 at room temperature and ∼1.7 × 106 S m-1 at 2 K). More interestingly, the CVD-synthesized 2D Fe7S8 nanosheets maintain robust environmental stability for more than 8 months. These results hereby lay solid foundations for synthesizing 2D nonlayered iron chalcogenides with mixed-valence states and exploring fascinating quantum phenomena.
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Affiliation(s)
- Peng Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
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50
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Guo Y, Zhang Y, Lu S, Zhang X, Zhou Q, Yuan S, Wang J. Coexistence of Semiconducting Ferromagnetics and Piezoelectrics down 2D Limit from Non van der Waals Antiferromagnetic LiNbO 3-Type FeTiO 3. J Phys Chem Lett 2022; 13:1991-1999. [PMID: 35188784 DOI: 10.1021/acs.jpclett.2c00091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Stable two-dimensional (2D) ferromagnetic semiconductors (FMSs) with multifunctional properties have attracted extensive attention in device applications. Non van der Waals (vdW) transition-metal oxides with excellent environmental stability, if ferromagnetic (FM), may open up an unconventional and promising avenue for this subject, but they are usually antiferromagnetic or ferrimagnetic. Herein, we predict an FMS, monolayer Fe2Ti2O9, which can be obtained from LiNbO3-type FeTiO3 antiferromagnetic bulk, has a moderate band gap of 0.87 eV, large perpendicular magnetization (6 μB/fu) and a Curie temperature up to 110 K. The intriguing magnetic properties are derived from the double exchange and negative charge transfer between O_p orbitals and Fe_d orbitals. In addition, a large in-plane piezoelectric (PE) coefficient d11 of 5.0 pm/V is observed. This work offers a competitive candidate for multifunctional spintronics and may stimulate further experimental exploration of 2D non-vdW magnets.
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Affiliation(s)
- Yilv Guo
- School of Physics, Southeast University, Nanjing 211189, China
| | - Yehui Zhang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Shuaihua Lu
- School of Physics, Southeast University, Nanjing 211189, China
| | - Xiwen Zhang
- School of Mechanism Engineering & School of Physics, Southeast University, Nanjing 211189, China
| | - Qionghua Zhou
- School of Physics, Southeast University, Nanjing 211189, China
| | - Shijun Yuan
- School of Physics, Southeast University, Nanjing 211189, China
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing 211189, China
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