High-speed III-V nanowire photodetector monolithically integrated on Si

Highly Efficient Photon Energy Conversion and Ultrasensitive Self-Powered Photodetection via a Monolithic p-3C-SiC Nanothin Film on p-Si/n-Si Double Junction

The pursuit of increased efficiency of photoelectric energy conversion through optimized semiconductor structures remains highly competitive, with current results yet to align with broad expectations. In this study, we discover a significant enhancement in photocurrent performance of a p-3C-SiC nanothin film on p-Si/n-Si double junction (DJ) heterostructure that integrates p-3C-SiC/p-Si heterojunction and p-Si/n-Si homojunction. The vertical photocurrent (VPC) and vertical photoresponsivity exhibit a substantial enhancement in the DJ heterostructure, surpassing by a maximum of 43-fold compared to the p-3C-SiC/n-Si single junction (SJ) counterpart. The p-3C-SiC layer and n-Si substrate of the two heterostructures have similar material and geometrical properties. More importantly, the fabrication costs for the DJ and SJ heterostructure devices are comparable. Our results demonstrate a significant potential for using DJ devices in energy harvesters, micro/nano electromechanical systems, and sensing applications. This research may also lead to the creation of advanced optoelectronic devices using DJ structures, where employing various semiconductor materials to achieve exceptional performance through the application of the concept and theoretical model described in this work.

Recent progress of group III-V materials-based nanostructures for photodetection

Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III-V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III-V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III-V materials. However, the detection ranges from Ultraviolet to Terahertz including broadband photodetectors of III-V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III-V semiconductors. Therefore, the recent development of III-V photodetectors in a broad detection range from Ultraviolet to Terahertz, and future requirements are highly desired. In this review, the recent development of photodetectors based on III-V semiconductor with different detection range is discussed. First, the bandgap of III-V materials and synthesis methods of III-V nanostructures are explored, subsequently, the detection mechanism and key figures-of-merit for the photodetectors are introduced, and then the device performance and emerging applications of photodetectors are provided. Lastly, the challenges and future research directions of III-V materials for photodetectors are presented.

Ultra-wide range non-contact surface profilometry based on reconfigurable fiber interferometry

Surface characterization is essential for a technical evaluation of device performance and to assess surface dynamics in fabrication units. In this regard, a number of surface profiling techniques have been developed that accurately map sample topography but have significantly limited detection range. Here, we demonstrate a cascaded non-contact fiber interferometer-based approach for real-time high-precision surface profiling with ultrawide detection range (nm to mm). This compact interferometers' system operates by wavelength interrogation that provides a scope to study several types of surfaces and has a tunable cavity configuration for varying the sensitivity and range of the detectable features' size. The proposed system enables nanoscale profiling over 10-1000 nm with resolution of 10 nm and microscale mapping over 1-1000 µm with resolution of 0.2 µm. The technique is utilized to map the features of nanostructured surfaces and estimate the surface roughness of standardized industrial samples.

The dopant (n- and p-type)-, band gap-, size- and stress-dependent field electron emission of silicon nanowires

This study investigates the electron field emission (EFE) of vertical silicon nanowires (Si NWs) fabricated on n-type Si (100) and p-type Si (100) substrates using catalyst-induced etching (CIE). The impact of dopant types (n- and p-types), optical energy gap, crystallite size and stress on EFE parameters has been explored in detail. The surface morphology of grown SiNWs has been characterized by field emission scanning electron microscopy (FESEM), showing vertical, well aligned SiNWs. Optical absorption and Raman spectroscopy confirmed the presence of the quantum confinement (QC) effect. The EFE performance of the grown nanowire arrays has been examined through recorded J-E measurements under the Fowler-Nordheim framework. The Si NWs grown on p-type Si showed a minimum turn-on field and also a higher field enhancement factor. The band-bending diagram also suggests a lower barrier height of p-type Si NWs compared to n-type Si NWs, which plays a key role in enhancing the EFE performance. These investigations suggest that dopant types (n- and p-types), band gap, crystallite size and stress influence the EFE parameters and Si NWs grown on p-type Si (100) substrates are much more favorable for the investigation of EFE properties.

Progress in Advanced Infrared Optoelectronic Sensors

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.

Mid-infrared Imaging Using Strain-Relaxed Ge1-xSnx Alloys Grown on 20 nm Ge Nanowires

Germanium-tin (Ge1-xSnx) semiconductors are a front-runner platform for compact mid-infrared devices due to their tunable narrow bandgap and compatibility with silicon processing. However, their large lattice parameter has been a major hurdle, limiting the quality of epitaxial layers grown on silicon or germanium substrates. Herein, we demonstrate that 20 nm Ge nanowires (NWs) act as effective compliant substrates to grow extended defect-free Ge1-xSnx alloys with a composition uniformity over several micrometers along the NW growth axis without significant buildup of the compressive strain. Ge/Ge1-xSnx core/shell NWs with Sn content spanning the 6-18 at. % range are achieved and processed into photoconductors exhibiting a high signal-to-noise ratio at room temperature with a cutoff wavelength in the 2.0-3.9 μm range. The processed NW devices are integrated in an uncooled imaging setup enabling the acquisition of high-quality images under both broadband and laser illuminations at 1550 and 2330 nm without the lock-in amplifier technique.

Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those photonic chips to their full potential. Recently, novel concepts involving topological designs introduced a variety of options for tuning device properties, such as the desired single-mode emission. Here, we introduce a novel cavity design that allows amplification of the topological interface mode by deterministic placement of gain material within a topological lattice. The proposed design is experimentally implemented by a selective epitaxy process to achieve closely spaced Si and InGaAs nanorods embedded within the same layer. This results in the first demonstration of a single-mode laser in the telecom band using the concept of amplified topological modes without introducing artificial losses.

Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts

Here we report on an experimental and theoretical investigation of the long-wavelength infrared (LWIR) photoresponse of photodetectors based on arrays of three million InP nanowires with axially embedded InAsP quantum discs. An ultra-thin top indium tin oxide contact combined with a novel photogating mechanism facilitates an improved LWIR normal incidence sensitivity in contrast to traditional planar quantum well photodetectors. The electronic structure of the quantum discs, including strain and defect-induced photogating effects, and optical transition matrix elements were calculated by an 8-bandk·psimulation along with solving drift-diffusion equations to unravel the physics behind the generation of narrow linewidth intersubband signals observed from the quantum discs.

High-Performance Multiwavelength GaNAs Single Nanowire Lasers

In this study, we report a significant enhancement in the performance of GaNAs-based single nanowire lasers through optimization of growth conditions, leading to a lower lasing threshold and higher operation temperatures. Our analysis reveals that these improvements in the laser performance can be attributed to a decrease in the density of localized states within the material. Furthermore, we demonstrate that owing to their excellent nonlinear optical properties, these nanowires support self-frequency conversion of the stimulated emission through second harmonic generation (SHG) and sum-frequency generation (SFG), providing coherent light emission in the cyan-green range. Mode-specific differences in the self-conversion efficiency are revealed and explained by differences in the light extraction efficiency of the converted light caused by the electric field distribution of the fundamental modes. Our work, therefore, facilitates the design and development of multiwavelength coherent light generation and higher-temperature operation of GaNAs nanowire lasers, which will be useful in the fields of optical communications, sensing, and nanophotonics.

Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires

Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics.

WO3-NP-activated WS2 layered heterostructures for efficient broadband (254 nm-940 nm) photodetection

Broadband photodetection including deep UV using Si is technically challenging due to its negligible optical absorption at 254 nm and the requirement of heterogeneous integration with very high bandgap photoactive materials. However, monolithic integration of high-bandgap semiconductors on Si is not possible due to CMOS fabrication incompatibility. Comprehensive experimental studies to achieve broadband photodetection including deep UV on Si are lacking in the literature. Here for the first time we have investigated 2D/0D heterojunctions of WS2/WO3 on a Si platform both experimentally and theoretically and established the charge transfer mechanism between them. Transient photocarrier decay experiments demonstrate effective quenching of excited photocarriers generated in WO3/WS2, signifying its utility in facilitating carrier transport, which is further evidenced by charge density calculation from DFT simulation. Our designed vertically aligned p-Si/WS2/WO3 heterojunction-based photodetector exhibits an excellent photosensitivity performance with a broad spectral response ranging from deep ultraviolet (254 nm) to near infrared (940 nm) wavelengths, and it not only provides a peak responsivity of 251 A W-1 and a specific detectivity of 1.89 × 014 Jones, but also possesses a rapid response speed with a rise/fall time of 0.64/0.48 s at 365 nm with a bias of 2 volt.

15.26Gb/s Si-substrate GaN high-speed visible light photodetector with super-lattice structure

In this paper, we studied a series of high-speed photodetectors (PD) with different super-lattice interlayer periods and the scale of the effective area to examine their communication performance. The mini-PDs are designed with a single 1 mm × 1 mm effective area. The mini-PDs have three different super-lattice (SL) periods in the interlayer: 8, 15, and 32. The micro-PD sample has multiple 50um by 50um photosensitive areas that form a 4 × 4 receiver array, which shares a common N electrode. Its SL period is 26. The experiment shows that mini-PDs have the advantages such as better tolerance to beam spot deviation, larger field of view (FoV), higher responsibility, and wider peak width in spectral response. But micro-LED samples outperform the others in communication capacity and wavelength selectivity. The 8, 15, and 32 SL mini-PD samples achieve 6.6, 7.3, and 8.8 Gb/s data rates, respectively. The micro-PD gains the maximum data rate of 14.38Gb/s without applying waveform level post-equalization, and 15.26Gb/s after using an NN-based post-equalizer. This experiment shows that with proper DSP, GaN-based PD would be suitable for high-speed VLC systems, especially for the short wavelength spectrum in visible light.

Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts

Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition on-chip but remains a significant challenge. Here, we propose to use lithographically defined metal stacks for regulating the surface concentrations of freely diffusing synthesis elements on compound semiconductors. This is demonstrated by geometric control of Indium droplet formation on Indium Arsenide surfaces, an important consequence of incongruent evaporation. Lithographic defined Aluminium/Palladium metal patterns induce well-defined droplet-free zones during annealing up to 600 °C, while the metal patterns retain their lateral geometry. Compositional and structural analysis is performed, as well as theoretical modelling. The Pd acts as a sink for free In atoms, lowering their surface concentration locally and inhibiting droplet formation. Al acts as a diffusion barrier altering Pd's efficiency. The behaviour depends only on a few basic assumptions and should be applicable to lithography-epitaxial manufacturing processes of compound semiconductors in general.

A high responsivity, high detectivity, and high response speed MSM UVB photodetector based on SnO2 microwires

We report a high performance UVB photodetector with a metal-semiconductor-metal device structure based on high crystal quality SnO₂ microwires prepared by chemical vapor deposition. Under 10 V bias, a low dark current of 3.69 × 10^-9 A and a high light-to-dark current ratio of 1630 were achieved. The device showed a high responsivity of about 1353.0 A·W^-1 under 322 nm light illumination. The detectivity of the device is as high as 5.4 × 10¹⁴ Jones, which ensures the detection of weak signals in the UVB spectral region. Due to the small amount of deep-level defect-induced carrier recombination, the light response rise time and fall time are shorter than 0.08 s.

Heterostructure axial GaAsSb ensemble near-infrared p-i-n based axial configured nanowire photodetectors

In this work, we present a systematic design of growth experiments and subsequent characterization of self-catalyzed molecular beam epitaxially grown GaAsSb heterostructure axial p-i-n nanowires (NWs) on p-Si <111> for the ensemble photodetector (PD) application in the near-infrared region. Diverse growth methods have been explored to gain a better insight into mitigating several growth challenges by systematically studying their impact on the NW electrical and optical properties to realize a high-quality p-i-n heterostructure. The successful growth approaches are Te-dopant compensation to suppress the p-type nature of intrinsic GaAsSb segment, growth interruption for strain relaxation at the interface, decreased substrate temperature to enhance supersaturation and minimize the reservoir effect, higher bandgap compositions of the n-segment of the heterostructure relative to the intrinsic region for boosting the absorption, and the high-temperature ultra-high vacuumin situannealing to reduce the parasitic radial overgrowth. The efficacy of these methods is supported by enhanced photoluminescence (PL) emission, suppressed dark current in the heterostructure p-i-n NWs accompanied by increased rectification ratio, photosensitivity, and a reduced low-frequency noise level. The PD fabricated utilizing the optimized GaAsSb axial p-i-n NWs exhibited the longer wavelength cutoff at ∼1.1μm with a significantly higher responsivity of ∼120 A W^-1(@-3 V bias) and a detectivity of 1.1 × 10¹³Jones operating at room temperature. Frequency and the bias independent capacitance in the pico-Farad (pF) range and substantially lower noise level at the reverse biased condition, show the prospects of p-i-n GaAsSb NWs PD for high-speed optoelectronic applications.

Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches

Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of NW ensembles requires advanced growth modeling, which is much less developed for catalyst-free NWs compared to vapor-liquid-solid (VLS) NWs of the same materials. Herein, we present an empirical approach for modeling simultaneous axial and radial growths of untapered catalyst-free III-V NWs and compare it to the rigorous approach based on the stationary diffusion equations for different populations of group III adatoms. We study in detail the step flow occurring simultaneously on the NW sidewalls and top and derive the general laws governing the evolution of NW length and radius versus the growth parameters. The rigorous approach is reduced to the empirical equations in particular cases. A good correlation of the model with the data on the growth kinetics of SAG GaAs NWs and self-induced GaN NWs obtained by different epitaxy techniques is demonstrated. Overall, the developed theory provides a basis for the growth modeling of catalyst-free NWs and can be further extended to more complex NW morphologies.

Highly Sensitive Tin-Lead Perovskite Photodetectors with Over 450 Days Stability Enabled by Synergistic Engineering for Pulse Oximetry System

Low-bandgap tin (Sn)-lead (Pb) halide perovskites can achieve near-infrared response for photodetectors. However, the Sn-based devices suffer from notorious instability and high defect densities due to the oxidation propensity of Sn²⁺ . Herein, a multifunctional additive 4-amino-2,3,5,6-tetrafluorobenzoic acid (ATFBA) is presented, which can passivate surface defects and inhibit the oxidation of Sn²⁺ through hydrogen bonds and chelation coordination from the terminal amino and carboxyl groups. The perfluorinated benzene ring structure of ATFBA affords the passivator assembled at the grain boundaries to enhance the water resistance. With the synergistical passivation of these functional groups, the Sn-Pb perovskite photodetector exhibits a remarkable responsivity of 0.52 A W^-1 and an excellent specific detectivity of 5.34 × 10¹² Jones at 850 nm, along with remaining 97% of its initial responsivity over 450 days. Benefitting from high sensitivity, the photodetector is integrated into a pulse oximetry sensor visualization system, yielding accurate blood oxygen saturation and heart rate with less than 2% error. This work paves the avenue toward constructing high-performance and stable Sn-Pb perovskite photodetectors for practical applications.

GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification

A high-performance GaAs nanowire photodetector was fabricated based on the modification of Au nanoparticles (NPs). Au nanoparticles prepared by thermal evaporation were used to modify the defects on the surface of GaAs nanowires. Plasmons and Schottky barriers were also introduced on the surface of the GaAs nanowires, to enhance their light absorption and promote the separation of carriers inside the GaAs nanowires. The research results show that under the appropriate modification time, the dark current of GaAs nanowire photodetectors was reduced. In addition, photocurrent photodetectors increased from 2.39 × 10^-10 A to 1.26 × 10^-9 A. The responsivity of GaAs nanowire photodetectors correspondingly increased from 0.569 A∙W^-1 to 3.047 A∙W^-1. The reasons for the improvement of the photodetectors' performance after modification were analyzed through the energy band theory model. This work proposes a new method to improve the performance of GaAs nanowire photodetectors.

Criterion for Selective Area Growth of III-V Nanowires

A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets on the mask, is established, taking into account the minimum chemical potential of the III-V pairs required for nucleation on different surfaces, and the surface diffusion of the group III adatoms. The SAG maps are plotted in terms of the material fluxes versus the temperature. The non-trivial behavior of the SAG window, with the opening size and pitch, is analyzed, depending on the direction of the diffusion flux of the group III adatoms into or from the openings. A good correlation of the model with the data on the SAG of vertical GaN NWs and planar GaAs and InAs NWs by molecular beam epitaxy (MBE) is demonstrated.

Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering

Energy upconversion via optical processes in semiconductor nanowires (NWs) is attractive for a variety of applications in nano-optoelectronics and nanophotonics. One of the main challenges is to achieve a high upconversion efficiency and, thus, a wide dynamic range of device performance, allowing efficient upconversion even under low excitation power. Here, we demonstrate that the efficiency of energy upconversion via two-photon absorption (TPA) can be drastically enhanced in core/shell NW heterostructures designed to provide a real intermediate TPA step via the band states of the narrow-bandgap region with a long carrier lifetime, fulfilling all the necessary requirements for high-efficiency two-step TPA. We show that, in radial GaAs(P)/GaNAs(P) core/shell NW heterostructures, the upconversion efficiency increases by 500 times as compared with that of the constituent materials, even under an excitation power as low as 100 mW/cm² that is comparable to the 1 sun illumination. The upconversion efficiency can be further improved by 8 times through engineering the electric-field distribution of the excitation light inside the NWs so that light absorption is maximized within the desired region of the heterostructure. This work demonstrates the effectiveness of our approach in providing efficient photon upconversion by exploring core/shell NW heterostructures, yielding an upconversion efficiency being among the highest reported in semiconductor nanostructures. Furthermore, our work provides design guidelines for enhancing efficiency of energy upconversion in NW heterostructures.

Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates

An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered. It is shown that MOCVD growth is influenced by an additional current into the nanowires originating from group III atoms reflected from an inert substrate and the upper limit for the group III current per nanowire given by the total group III flow and the array pitch. The model fits the data on the growth kinetics of Au-catalyzed and catalyst-free III-V nanowires quite well and should be useful for understanding and controlling the MOCVD nanowire growth in general.

Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires

III-V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires, new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials. Herein, we combine high-crystal-quality III-nitride nanowires with amorphous molybdenum sulfides (a-MoS_x) to construct III-nitride/a-MoS_x core-shell nanostructures. Upon light illumination, such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment, demonstrating a negative photoresponsivity of -100.42 mA W^-1 under 254 nm illumination, and a positive photoresponsivity of 29.5 mA W^-1 under 365 nm illumination. Density functional theory calculations reveal that the successful surface modification of the nanowires via a-MoS_x decoration accelerates the reaction process at the electrolyte/nanowire interface, leading to the generation of opposite photocurrent signals under different photon illumination. Most importantly, such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition, showing great promise to build light-wavelength controllable sensing devices in the future.

Polarization Control in Integrated Silicon Waveguides Using Semiconductor Nanowires

In this work, we show the design of a silicon photonic-based polarization converting device based on the integration of semiconduction InP nanowires on the silicon photonic platform. We present a comprehensive numerical analysis showing that full polarization conversion (from quasi-TE modes to quasi-TM modes, and vice versa) can be achieved in devices exhibiting small footprints (total device lengths below 20 µm) with minimal power loss (<2 dB). The approach described in this work can pave the way to the realization of complex and re-configurable photonic processors based on the manipulation of the state of polarization of guided light beams.

Assessing the insulating properties of an ultrathin SrTiO3shell grown around GaAs nanowires with molecular beam epitaxy

We have studied electronic transport in undoped GaAs/SrTiO₃core-shell nanowires standing on their Si substrate with two-tip scanning tunneling microscopy in ultrahigh vacuum. The resistance profile along the nanowires is proportional to the tip separation with resistances per unit length of a few GΩ/μm. Examination of the different transport pathways parallel to the nanowire growth axis reveals that the measured resistance is consistent with a conduction along the interfacial states at the GaAs{110} sidewalls, the 2 nm thick SrTiO₃shell being as much as resistive, despite oxygen deficient growth conditions. The origin of the shell resistivity is discussed in light of the nanowire analysis with transmission electron microscopy and Raman spectroscopy, providing good grounds for the use of SrTiO₃shells as gate insulators.

Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

Quantum well intermixing (QWI) on a III-V-on-insulator (III-V-OI) substrate is presented for active-passive integration. Shallow implantation at a high temperature, which is essential for QWI on a III-V-OI substrate, is accomplished by phosphorus molecule ion implantation. As a result, the bandgap wavelength of multi-quantum wells (MQWs) on a III-V-OI substrate is successfully tuned by approximately 80 nm, enabling the monolithic integration of electro-absorption modulators and waveguide photodetectors using a lateral p-i-n junction formed along the InP/MQW/InP rib waveguide. Owing to the III-V-OI structure and the rib waveguide structure, the parasitic capacitance per unit length can be reduced to 0.11 fF/µm, which is suitable for high-speed and low-power modulators and photodetectors. The presented QWI can extend the possibility of a III-V complementary metal-oxide-semiconductor (CMOS) photonics platform for large-scale photonic integrated circuits.

Modeling the Radial Growth of Self-Catalyzed III-V Nanowires

A new model for the radial growth of self-catalyzed III-V nanowires on different substrates is presented, which describes the nanowire morphological evolution without any free parameters. The model takes into account the re-emission of group III atoms from a mask surface and the shadowing effect in directional deposition techniques such as molecular beam epitaxy. It is shown that radial growth is faster for larger pitches of regular nanowire arrays or lower surface density, and can be suppressed by increasing the V/III flux ratio or decreasing re-emission. The model describes quite well the data on the morphological evolution of Ga-catalyzed GaP and GaAs nanowires on different substrates, where the nanowire length increases linearly and the radius enlarges sub-linearly with time. The obtained analytical expressions and numerical data should be useful for morphological control over different III-V nanowires in a wide range of growth conditions.

Single-Mode Emission in InP Microdisks on Si Using Au Antenna

An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III-Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stability over a wider range of temperature can be challenging. Here, we explore the use of Au nanorod antennae on InP whispering gallery mode lasers on Si for single-mode emission. We show that by proper choice of the antenna size and positioning, we can suppress the side modes of a cavity and achieve single-mode emission over a wide excitation range. We establish emission trends by varying the size of the antenna and show that the far-field radiation pattern differs significantly for devices with and without antenna. Furthermore, the antenna-induced single-mode emission is dominant from room temperature (300 K) down to 200 K, whereas the cavity without an antenna is multimodal and its dominant emission wavelength is highly temperature-dependent.

Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport

A new model for nanowire growth by molecular beam epitaxy is proposed which extends the earlier approaches treating an isolated nanowire to the case of ensembles of nanowires. I consider an adsorbing substrate on which the arriving growth species (group III adatoms for III-V nanowires) may diffuse to the nanowire base and subsequently to the top without desorption. Analytical solution for the nanowire length evolution at a constant radius shows that the shadowing of the substrate surface is efficient and affects the growth kinetics from the very beginning of growth in dense enough ensembles of nanowires. The model fits quite well the kinetic data on different Au-catalyzed and self-catalyzed III-V nanowires. This approach should work equally well for vapor-liquid-solid and catalyst-free nanowires grown by molecular beam epitaxy and related deposition techniques on unpatterned or masked substrates.

Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays

Quasi one-dimensional semiconductor nanowires (NWs) in either arrays or single free-standing forms have shown unique optical properties (i.e., light absorption and emission) differently from their thin film or bulk counterparts, presenting new opportunities for achieving enhanced performance and/or functionalities for optoelectronic device applications. However, there is still a lack of understanding of the absorption properties of vertically standing single NWs within an array environment with light coupling from neighboring NWs within certain distances, due to the challenges in fabrication of such devices. In this article, we present a new approach to fabricate single vertically standing NW photodetectors from ordered InP NW arrays using the focused ion beam technique, to allow direct measurements of optical and electrical properties of single NWs standing in an array. The light-matter interaction and photodetector performance are investigated using both experimental and theoretical methods. The consistent photocurrent and simulated absorption mapping results reveal that the light absorption and thus photoresponse of single NWs are strongly affected by the NW array geometry and related light coupling from their surrounding dielectric environment, due to the large absorption cross section and/or strong light interaction. While the highest light concentration factor (∼19.64) was obtained from the NW in an array with a pitch of 1.5 μm, the higher responsivity per unit cell (equivalent to NW array responsivity) of a single vertical NW photodetector was achieved in an array with a pitch of 0.8 μm, highlighting the importance of array design for practical applications. The insight from our study can provide important guidance to evaluate and optimize the device design of NW arrays for a wide range of optoelectronic device applications.

Photoelectric Logic and In Situ Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots

Electronic-Photonic integrated systems have attracted intensive attention in addressing the explosively increasing data-processing issue in the post-Moore era. However, the tremendous size difference between basic electronic and photonic units poses challenges for the further deep convergence of optoelectronic microprocessors. Here, we report a floating-gate transistor fabricated with complementary metal-oxide-semiconductor compatible technologies, which can realize multilevel photoelectric logic computing and in situ memory simultaneously. The transistor presents stepped floating gates of perovskite quantum dots with different bandgaps and exhibits nonvolatile multilevel memory states written/erased by electrical and high-bandwidth optical signals. Meanwhile, the device can also realize logic functions such as an optoelectronic AND gate by separably programming the states of the stepped floating gates with bias and optical wavelength. A convergence of multilevel logic computing and storage is further achieved on the transistor. By demonstrating such multifunctionality in a single device, the photoelectric transistors, even with a rather large size to match photonic cells, can provide the optoelectronic microprocessors with substantially improved performances.

Waveguide coupled III-V photodiodes monolithically integrated on Si

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In_0.5Ga_0.5As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm² at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f_3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.

Wafer-scale, highly uniform, and well-arrayed suspended nanostructures for enhancing the performance of electronic devices

Suspended nanostructures play an important role in enhancing the performance of a diverse group of nanodevices. However, realizing a good arrangement and suspension for nanostructures of various shapes remains a significant challenge. Herein, a rapid and simple method for fabricating wafer-scale, highly uniform, well-arrayed suspended nanostructures via nanowelding lithography is reported. Suspended nanostructures with various shapes (nanowires, nanoholes, nanomesh, and nanofilms) and materials (gold, silver, and palladium metals) were employed to demonstrate the applicability of our method. Moreover, gas sensors and thermoacoustic speakers with suspended nanowires outperformed those with unsuspended nanostructures. The proposed method is expected to help advance the development of future nanodevices based on suspended nanostructures.

Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition

The epitaxial growth of III-V nanowires with excellent optoelectronic properties on low-cost, light-weight, and flexible substrates is a key step for the design and engineering of future optoelectronic devices. In our study, GaAs nanowires were grown on synthetic mica, a two-dimensional layered material, via vapor-liquid-solid growth using metal-organic chemical vapor deposition. The effect of basic epitaxial growth parameters such as temperature and V/III ratio on the vertical yield of the nanowires is investigated. A vertical yield of over 60% is achieved at an optimum growth temperature of 400 °C and a V/III ratio 18. The structural properties of the nanowires are investigated using various techniques including scanning electron microscopy, high-resolution transmission electron microscopy, and high-angle annular dark-field imaging. The vertical nanowires grown at a low temperature and a high V/III ratio are found to have a zincblende phase with a [111] B polarity. The optical properties are investigated by photoluminescence (PL) and time-resolved PL measurements. First-principles electronic structure calculations within the framework of density functional theory elucidate the van der Waals nature of the nanowire/mica interface. Our results also show that these nanowires can be easily lifted off the bulk 2D mica template, providing a pathway for flexible nanowire devices.

Theory of MBE Growth of Nanowires on Reflecting Substrates

Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group III atoms impinging NWs is presented, which accounts for specular re-emission from the mask surface and the shadowing effect in the absence of surface diffusion from the substrate. An expression is given for the shadowing length of NWs corresponding to the full shadowing of the mask. Axial and radial NW growths are considered in different stages, including the stage of purely axial growth, intermediate stage with radial growth, and asymptotic stage, where the NWs receive the maximum flux determined by the array pitch. The model provides good fits with the data obtained for different vapor-liquid-solid and catalyst-free III-V NWs.

Small-diameter p-type SnS nanowire photodetectors and phototransistors with low-noise and high-performance

P-type nanostructured photodetectors and phototransistors have been widely used in the field of photodetection due to their excellent electrical and optoelectronic characteristics. However, the large dark current of p-type photodetectors will limit the detectivity. Herein, we synthesized small-diameter single-crystalline p-type SnS nanowires (NWs) and then fabricated single SnS NW photodetectors and phototransistors. The device exhibits low noise and low dark current, and its noise current power is as low as 2.4 × 10^-28A². Under 830 nm illumination and low power density of 0.12 mW cm^-2, the photoconductive gain, responsivity and detectivity of the photodetector are as high as 3.9 × 10², 2.6 × 10²A W^-1and 1.8 × 10¹³Jones, respectively, at zero gate voltage. The rise and fall time of response are about 9.6 and 14 ms. The experimental results show that the small-diameter p-type SnS NWs have broad application prospects in high-performance and low-power photodetectors with high sensitivity, fast response speed and wide spectrum detection in the future.

Graphene on Silicon Photonics: Light Modulation and Detection for Cutting-Edge Communication Technologies

Graphene—a two-dimensional allotrope of carbon in a single-layer honeycomb lattice nanostructure—has several distinctive optoelectronic properties that are highly desirable in advanced optical communication systems. Meanwhile, silicon photonics is a promising solution for the next-generation integrated photonics, owing to its low cost, low propagation loss and compatibility with CMOS fabrication processes. Unfortunately, silicon’s photodetection responsivity and operation bandwidth are intrinsically limited by its material characteristics. Graphene, with its extraordinary optoelectronic properties has been widely applied in silicon photonics to break this performance bottleneck, with significant progress reported. In this review, we focus on the application of graphene in high-performance silicon photonic devices, including modulators and photodetectors. Moreover, we explore the trend of development and discuss the future challenges of silicon-graphene hybrid photonic devices.

Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature

Highly sensitive photodetectors with single-photon level detection are one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias are demonstrated. Top-down etched, heavily doped p-type InP nanowires and n-type aluminium-doped zinc oxide (AZO)/zinc oxide (ZnO) carrier-selective contact are used to form a radial p-n junction with a built-in electric field exceeding 3 × 10⁵  V cm^-1  at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway toward low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.

Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring

Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying on the vapor-liquid-solid method using molecular beam epitaxy. By interrupting the rotation of the sample during the radial growth sequence of the InP shell, hexagonal asymmetric (HA) NWs with long/short cross-section axes were obtained instead of the usual symmetrical shape. Polarization-resolved photoluminescence measurements have revealed a significant influence of the asymmetric shaped NWs on the InAs QD emission polarization with the photons being mainly polarized parallel to the NW long cross-section axis. A degree of linear polarization (DLP) up to 91% is obtained, being at the state of the art for the reported DLP values from QD-NWs. More importantly, the growth protocol herein is fully compatible with the current applications of HA NWs covering a wide range of devices such as polarized light emitting diodes and photodetectors.

Quantum Tunneling Induced Optical Rectification and Plasmon-Enhanced Photocurrent in Nanocavity Molecular Junctions

Molecular junctions offer the opportunity for downscaling optoelectronic devices. Separating two electrodes with a single layer of molecules accesses the quantum-tunneling regime at low voltages (<1 V), where tunneling currents become highly sensitive to local nanometer-scale geometric features of the electrodes. These features generate asymmetries in the electrical response of the junction which combine with the incident oscillating optical fields to produce optical rectification and photocurrents. Maximizing photocurrents requires accurate control of the overall junction geometry and a large confined optical field in the optimal location. Plasmonic nanostructures such as metallic nanoparticles are prime candidates for this application, because their size and shape dictate a consistent junction geometry while strongly enhancing the optical field from incident light. Here we demonstrate a robust lithography-free molecular optoelectronic device geometry, where a metallic nanoparticle on a self-assembled molecular monolayer is sandwiched between planar bottom and semitransparent top electrodes, to create molecular junctions with reproducible morphology and electrical response. The well-defined geometry enables predictable and intense plasmonic localization, which we show creates optical-frequency voltages ∼ 30 mV in the molecular junction from 100 μW incident light, generating photocurrent by optical rectification (>10 μA/W) from only a few hundred molecules. Quantitative agreement is thus obtained between DC- and optical-frequency quantum-tunneling currents, predicted by a simple analytic equation. By measuring the degree of junction asymmetry for different molecular monolayers, we find that molecules with a large DC rectification ratio also boost zero-bias electrical asymmetry, making them good candidates for sensing and energy harvesting applications in combination with plasmonic nanomaterials.

A monolithic InP/SOI platform for integrated photonics

The deployment of photonic integrated circuits (PICs) necessitates an integration platform that is scalable, high-throughput, cost-effective, and power-efficient. Here we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms: Si photonics and InP photonics. This monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard (001)-oriented silicon-on-insulator (SOI) wafers. The epitaxial InP is in-plane, dislocation-free, site-controlled, intimately positioned with the Si device layer, and placed right on top of the buried oxide layer to form "InP-on-insulator". These attributes allow for the realization of various photonic functionalities using the epitaxial InP, with efficient light interfacing between the III-V devices and the Si-based waveguides. We exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires, square cavities, and micro-disks. Our results here mark a critical step forward towards fully-integrated Si-based PICs.

Red-emitting InP quantum dot micro-disk lasers epitaxially grown on (001) silicon

Direct epitaxy of InP quantum dot (QD) lasers on silicon (Si) provides an on-chip red laser source for integrated Si photonics with different applications. Here, we demonstrate the first, to the best of our knowledge, InP QD lasers directly grown on (001) Si. Combining highly emissive InP QDs and a GaAs/Si template with low defect density, continuous-wave (CW) lasing of micro-disk lasers (MDLs) on Si is achieved at room temperature. The lowest threshold of MDLs on Si is ∼500nW, without considering the micro-disk surface absorption efficiency of the pump power. The MDLs grown on the native GaAs substrate with the same growth and fabrication process are compared using statistical data analysis. Similar material characterization results and device performances on these two substrates further confirm the performance of QD lasers on Si. This demonstration paves the way for future realization of integrated photonic circuits with red and near-infrared (NIR) lasers on Si.

Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays

Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.

High-performance MoOx/n-Si heterojunction NIR photodetector with aluminum oxide as a tunneling passivation interlayer

The most effective and potential approach to improve the performance of heterojunction photodetectors is to obtain favorable interfacial passivation by adding an insertion layer. In this paper, MoO_x/Al₂O₃/n-Si heterojunction photodetectors with excellent photocurrents, responsivity and detectivity were fabricated, in which alumina acts as a tunneling passivation layer. By optimizing the post-annealing treatment temperature of the MoO_xand the thickness of the ultra-thin Al₂O₃, the photodetector achieved a ratio of photocurrent to dark current of 3.1 × 10⁵, a photoresponsivity of 7.11 A W^-1(@980 nm) and a detective of 9.85 × 10¹²Jones at -5 V bias. Besides, a self-driven response of 0.17 A W^-1and a high photocurrent/dark current ratio of 2.07 × 10⁴were obtained. The result demonstrated that optimizing the interface of heterojunctions is a promising way to obtain a heterojunction photodetector with high-performance.

In Situ Growth of GeS Nanowires with Sulfur-Rich Shell for Featured Negative Photoconductivity

The negative photoconductivity (NPC) effect originating from the surface shell layer has been considered as an efficient approach to improve the performance of optoelectronic nanodevices. However, a scientific design and precise growth of NPC-effect-caused shell during nanowire (NW) growth process for achieving high-performance photodetectors are still lacking. In this work, GeS NWs with a controlled sulfur-rich shell, diameter, and length are successfully prepared by a simple chemical vapor deposition method. As checked by transmission electron microscopy, the thickness of the sulfur-rich shell ranges from 10.5 ± 1.5 to 13.4 ± 2.5 nm by controlling the NW growth time. The composition of the sulfur-rich shell is studied by X-ray photoelectron spectroscopy, showing the decrease of S in the GeS_x shell from the surface to core. When configured into the well-known phototransistor, a featured NPC effect is observed, benefiting the high-performance photodetector with high responsivity of 10⁵ A·W^-1 and detectivity of 10¹² Jones for λ = 405 nm with ultralow intensity of 0.04 mW·cm^-2. However, the thicker-shell NW phototransistor shows an unstable photodetector behavior with smaller negative photocurrent because of more hole-trapping states in the thicker shell. All results suggest a careful design and controlled growth of an NPC-effect-caused shell for future optoelectronic applications.

In-Plane Monolithic Integration of Scaled III-V Photonic Devices

It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material. The monolithic integration of the III-V material is ultimately desirable for scalable integrated circuits but inherently challenging due to the large lattice and thermal mismatch with Si. Here, we briefly review different approaches to monolithic III-V integration while focusing on discussing the results achieved using an integration technique called template-assisted selective epitaxy (TASE), which provides some unique opportunities compared to existing state-of-the-art approaches. This method relies on the selective replacement of a prepatterned silicon structure with III-V material and thereby achieves the self-aligned in-plane monolithic integration of III-Vs on silicon. In our group, we have realized several embodiments of TASE for different applications; here, we will focus specifically on in-plane integrated photonic structures due to the ease with which these can be coupled to SOI waveguides and the inherent in-plane doping orientation, which is beneficial to waveguide-coupled architectures. In particular, we will discuss light emitters based on hybrid III-V/Si photonic crystal structures and high-speed InGaAs detectors, both covering the entire telecom wavelength spectral range. This opens a new path towards the realization of fully integrated, densely packed, and scalable photonic integrated circuits.

Hybrid III-V Silicon Photonic Crystal Cavity Emitting at Telecom Wavelengths

Photonic crystal (PhC) cavities are promising candidates for Si photonics integrated circuits due to their ultrahigh quality (Q)-factors and small mode volumes. Here, we demonstrate a novel concept of a one-dimensional hybrid III-V/Si PhC cavity which exploits a combination of standard silicon-on-insulator technology and active III-V materials. Using template-assisted selective epitaxy, the central part of a Si PhC lattice is locally replaced with III-V gain material. The III-V material is placed to overlap with the maximum of the cavity mode field profile, while keeping the major part of the PhC in Si. The selective epitaxy process enables growth parallel to the substrate, and hence in-plane integration with Si, and in-situ in-plane homo- and heterojunctions. The fabricated hybrid III-V/Si PhCs show emission over the entire telecommunication band from 1.2 to 1.6 μm at room temperature validating the device concept and its potential towards fully integrated light sources on silicon.