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Li Y, Du X, Wang J, Xu R, Zhao W, Zhai K, Liu J, Chen H, Yang Y, Plumb NC, Ju S, Shi M, Liu Z, Guo JG, Chen X, Chen Y, Yang L. Quantum-Confined Tunable Ferromagnetism on the Surface of a Van der Waals Antiferromagnet NaCrTe 2. NANO LETTERS 2024; 24:9832-9838. [PMID: 39101565 DOI: 10.1021/acs.nanolett.4c01542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
Abstract
The surface of three-dimensional materials provides an ideal and versatile platform to explore quantum-confined physics. Here, we systematically investigate the electronic structure of Na-intercalated CrTe2, a van der Waals antiferromagnet, using angle-resolved photoemission spectroscopy and ab initio calculations. The measured band structure deviates from the calculation of bulk NaCrTe2 but agrees with that of ferromagnetic monolayer CrTe2. Consistently, we observe unexpected exchange splitting of the band dispersions, persisting well above the Néel temperature of bulk NaCrTe2. We argue that NaCrTe2 features a quantum-confined 2D ferromagnetic state in the topmost surface layer due to strong ferromagnetic correlation in the CrTe2 layer. Moreover, the exchange splitting and the critical temperature can be controlled by surface doping of alkali-metal atoms, suggesting the feasibility of tuning the surface ferromagnetism. Our work not only presents a simple platform for exploring tunable 2D ferromagnetism but also provides important insights into the quantum-confined low-dimensional magnetic states.
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Affiliation(s)
- Yidian Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Xian Du
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Junjie Wang
- Lab for Advanced Materials and Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, Beijing 100083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Runzhe Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wenxuan Zhao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Kaiyi Zhai
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Jieyi Liu
- Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, U.K
| | - Houke Chen
- Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, U.K
| | - Yiheng Yang
- Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, U.K
| | - Nicholas C Plumb
- Photon Science Division, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - Sailong Ju
- Photon Science Division, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - Ming Shi
- Photon Science Division, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou, Zhejiang 31008, China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Jian-Gang Guo
- Lab for Advanced Materials and Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, Beijing 100083, China
| | - Xiaolong Chen
- Lab for Advanced Materials and Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, Beijing 100083, China
| | - Yulin Chen
- Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, U.K
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Lexian Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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2
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Yao R, Liu Z, Ma Y, Xu L, He Y, Ai W, Li Y, Lu F, Dong H, Gao Z, Wang WH, Luo F. Controlled Synthesis of 2D Ferromagnetic/Antiferromagnetic Cr 7Te 8/MnTe Vertical Heterostructures for High-Tunable Coercivity. ACS NANO 2024. [PMID: 39137306 DOI: 10.1021/acsnano.4c07128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
Two-dimensional ferromagnetic/antiferromagnetic (2D-FM/AFM) heterostructures are of great significance to realize the application of spintronic devices such as miniaturization, low power consumption, and high-density information storage. However, traditional mechanical stacking can easily damage the crystal quality or cause chemical contamination residues for 2D materials, which can result in weak interface coupling and difficulty in device regulation. Chemical vapor deposition (CVD) is an effective way to achieve a high-quality heterostructure interface. Herein, high-quality interface 2D-FM/AFM Cr7Te8/MnTe vertical heterostructures were successfully synthesized via a one-pot CVD method. Moreover, the atomic-scale structural scanning transmission electron microscope (STEM) characterization shows that the interface of the vertical heterostructure is clear and flat without an excess interface layer. Compared to the parent Cr7Te8, the coercivity (HC) of the high-quality interface Cr7Te8/MnTe heterostructure is significantly reduced as the thickness of MnTe increases, with a maximum decrease of 74.5% when the thickness of the MnTe nanosheet is around 30 nm. Additionally, the HC of the Cr7Te8/MnTe heterostructure can also be regulated by applying a gate voltage, and the HC increases or decreases with increasing positive or negative gate voltages. Thus, the effective regulation of HC is essential to improving the performance of advanced spintronic devices (e.g., MRAM and magnetic sensors). Our work will provide ideas for spin controlling and device application of 2D-FM/AFM heterostructures.
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Affiliation(s)
- Rui Yao
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin 300350, China
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Zhaochao Liu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Yifei Ma
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Lingyun Xu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Yuyu He
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Wei Ai
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - You Li
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin 300350, China
| | - Feng Lu
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin 300350, China
| | - Hong Dong
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin 300350, China
| | - Zhansheng Gao
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, Henan Key Laboratory for High Efficiency Energy Conversion Science and Technology, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Wei-Hua Wang
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin 300350, China
| | - Feng Luo
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin 300350, China
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
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3
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Sun C, Ye H, Zhu Y, Chen L, Bai D, Wang J. Ferroelectrically controlled electromagnetic and transport properties of VN 2H 2/Al 2O 3 van der Waals multiferroic heterostructures. NANOSCALE 2024. [PMID: 39105441 DOI: 10.1039/d4nr01441c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/07/2024]
Abstract
The vertical integration of a ferromagnetic monolayer and a ferroelectric monolayer into van der Waals heterostructures offers a promising route to achieve two-dimensional multiferroic semiconductors owing to the lack of intrinsic single-phase multiferroic materials in nature. In this study, we propose a VN2H2/Al2O3 van der Waals magnetoelectric multiferroic heterostructure and investigate its electronic, magnetic, and transport properties using density functional theory combined with the Boltzmann transport theory. The VN2H2 monolayer is a room-temperature ferromagnetic semiconductor with a band gap of 0.24 eV and a Curie temperature of 411 K, while the Al2O3 monolayer is a ferroelectric semiconductor with a polarization value of 0.11 C m-2. In the VN2H2/Al2O3 van der Waals heterostructures, the conversion between the metal and the semiconductor can be controlled by altering the polarization of the Al2O3 layer. The VN2H2/Al2O3 van der Waals heterostructure retains room-temperature ferromagnetism, and the reverse of polarization is accompanied with a change in the direction of the easy magnetization axis. In addition, electrostatic doping can significantly improve the conductivity of the downward polarization state and transform the upward polarization state from a metal to a half-metal, achieving 100% spin polarization. Our results thus pave the way for achieving highly tunable electromagnetic and transport properties in van der Waals magnetoelectric heterostructures, which have potential applications in next-generation low-power logic and memory devices.
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Affiliation(s)
- Caijia Sun
- School of Materials and Physics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Haoshen Ye
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Yijie Zhu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 210093, Nanjing, China
| | - Leiming Chen
- School of Materials and Physics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Dongmei Bai
- School of Mathematics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Jianli Wang
- School of Materials and Physics, China University of Mining and Technology, Xuzhou 221116, China.
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4
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Swanson J, El Jamal SE, Hartman T, Stewart OC, Glaser P, Biacchi AJ, Henry D, Liu A, Stoll SL. Solution Synthesis of NdTe 3 Magnetic Nanosheets. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:7056-7068. [PMID: 39070667 PMCID: PMC11270740 DOI: 10.1021/acs.chemmater.4c01362] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/10/2024] [Revised: 06/18/2024] [Accepted: 06/20/2024] [Indexed: 07/30/2024]
Abstract
Neodymium tritelluride is a layered van der Waals material, with correlated electronic properties including high electronic mobility, charge density waves, and antiferromagnetism. We developed a solution synthesis method to form free-standing nanosheets of NdTe3, with nanosheet lateral dimensions of 200-400 nm. The morphology of the nanosheet was influenced by the neodymium precursor. When Nd[(N(SiMe3)2]3 was used as the metal source the nanosheet thickness average was 12 ± 2.5 nm, alternatively the combination of NdCl3 and Li(N(SiMe3)2) led to thicker nanosheets, approximately 19 ± 2.4 nm. We believe that the difference in thickness and changes in surface chemistry point to the role of chloride in accelerating nanocrystal growth for the synthesis with NdCl3 (and Li(N(SiMe3)2). Both types of nanosheets exhibit charge density wave (CDW) distortions as measured using electron diffraction and investigated using variable temperature Raman scattering. Interestingly, the magnetic studies suggest a distinct change in properties between 12 and 19 nm thickness in antiferromagnetic NdTe3.
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Affiliation(s)
- Joel Swanson
- Department
of Chemistry, Georgetown University, 37th and O Sts. NW, Washington,
D.C. 20057, United States
| | - Salah Eddin El Jamal
- Department
of Chemistry, Georgetown University, 37th and O Sts. NW, Washington,
D.C. 20057, United States
| | - Tyler Hartman
- Department
of Chemistry, Georgetown University, 37th and O Sts. NW, Washington,
D.C. 20057, United States
| | - Orlando C. Stewart
- Department
of Chemistry, Georgetown University, 37th and O Sts. NW, Washington,
D.C. 20057, United States
| | - Priscilla Glaser
- Department
of Chemistry, Georgetown University, 37th and O Sts. NW, Washington,
D.C. 20057, United States
| | - Adam J. Biacchi
- Nanoscale
Device Characterization Division, National
Institute of Standards and Technology (NIST), 100 Bureau Dr., Gaithersburg, Maryland 20899, United States
| | - DaVonne Henry
- Department
of Physics, Georgetown University, 37th and O Sts. NW, Washington,
D.C. 20057, United States
| | - Amy Liu
- Department
of Physics, Georgetown University, 37th and O Sts. NW, Washington,
D.C. 20057, United States
| | - Sarah L. Stoll
- Department
of Chemistry, Georgetown University, 37th and O Sts. NW, Washington,
D.C. 20057, United States
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5
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He Z, Poudel SP, Stolz S, Wang T, Rossi A, Wang F, Mo SK, Weber-Bargioni A, Qiu ZQ, Barraza-Lopez S, Zhu T, Crommie MF. Synthesis and Polymorph Manipulation of FeSe 2 Monolayers. NANO LETTERS 2024; 24:8535-8541. [PMID: 38968422 DOI: 10.1021/acs.nanolett.4c01286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2024]
Abstract
Polymorph engineering involves the manipulation of material properties through controlled structural modification and is a candidate technique for creating unique two-dimensional transition metal dichalcogenide (TMDC) nanodevices. Despite its promise, polymorph engineering of magnetic TMDC monolayers has not yet been demonstrated. Here we grow FeSe2 monolayers via molecular beam epitaxy and find that they have great promise for magnetic polymorph engineering. Using scanning tunneling microscopy (STM) and spectroscopy (STS), we find that FeSe2 monolayers predominantly display a 1T' structural polymorph at 5 K. Application of voltage pulses from an STM tip causes a local, reversible transition from the 1T' phase to the 1T phase. Density functional theory calculations suggest that this single-layer structural phase transition is accompanied by a magnetic transition from an antiferromagnetic to a ferromagnetic configuration. These results open new possibilities for creating functional magnetic devices with TMDC monolayers via polymorph engineering.
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Affiliation(s)
- Zehao He
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Material Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Shiva Prasad Poudel
- Department of Physics and MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, Arkansas 72701, United States
| | - Samuel Stolz
- Department of Physics, University of California, Berkeley, California 94720, United States
| | - Tianye Wang
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Antonio Rossi
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Feng Wang
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute at the University of California, Berkeley, and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Alexander Weber-Bargioni
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Zi Qiang Qiu
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Salvador Barraza-Lopez
- Department of Physics and MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, Arkansas 72701, United States
| | - Tiancong Zhu
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana, 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, 47907, United States
| | - Michael F Crommie
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute at the University of California, Berkeley, and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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6
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Chen H, Tian W, Zhang L, Song P, Jia L, Chen J, Zhu Z, Feng YP, Loh KP. Highly Efficient Spin Injection and Readout Across Van Der Waals Interface. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403073. [PMID: 38966892 DOI: 10.1002/smll.202403073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2024] [Revised: 06/25/2024] [Indexed: 07/06/2024]
Abstract
Spin injection, transport, and detection across the interface between a ferromagnet and a spin-carrying channel are crucial for energy-efficient spin logic devices. However, interfacial conductance mismatch, spin dephasing, and inefficient spin-to-charge conversion significantly reduce the efficiency of these processes. In this study, it is demonstrated that an all van der Waals heterostructure consisting of a ferromagnet (Fe3GeTe2) and Weyl semimetal enables a large spin readout efficiency. Specifically, a nonlocal spin readout signal of 150 mΩ and a local spin readout signal of 7.8 Ω is achieved, which reach the signal level useful for practical spintronic devices. The remarkable spin readout signal is attributed to suppressed spin dephasing channels at the vdW interfaces, long spin diffusion, and efficient charge-spin interconversion in Td-MoTe2. These findings highlight the potential of vdW heterostructures for spin Hall effect-enabled spin detection with high efficiency, opening up new possibilities for spin-orbit logic devices using vdW interfaces.
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Affiliation(s)
- Hao Chen
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Wanghao Tian
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lishu Zhang
- Department of Physics, National University of Singapore, Singapore, 117551, Singapore
| | - Peng Song
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore, 637553, Singapore
| | - Lanxin Jia
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Zhifeng Zhu
- School of Information Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, Singapore, 117551, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
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7
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Jia Z, Chen Q, Wang W, Sun R, Li Z, Hübner R, Zhou S, Cai M, Lv W, Yu Z, Zhang F, Zhao M, Tian S, Liu L, Zeng Z, Jiang Y, Wang Z. Multi-Level Switching of Spin-Torque Ferromagnetic Resonance in 2D Magnetite. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401944. [PMID: 38704733 PMCID: PMC11234467 DOI: 10.1002/advs.202401944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Revised: 04/08/2024] [Indexed: 05/07/2024]
Abstract
2D magnetic materials hold substantial promise in information storage and neuromorphic device applications. However, achieving a 2D material with high Curie temperature (TC), environmental stability, and multi-level magnetic states remains a challenge. This is particularly relevant for spintronic devices, which require multi-level resistance states to enhance memory density and fulfil low power consumption and multi-functionality. Here, the synthesis of 2D non-layered triangular and hexagonal magnetite (Fe3O4) nanosheets are proposed with high TC and environmental stability, and demonstrate that the ultrathin triangular nanosheets show broad antiphase boundaries (bAPBs) and sharp antiphase boundaries (sAPBs), which induce multiple spin precession modes and multi-level resistance. Conversely, the hexagonal nanosheets display slip bands with sAPBs associated with pinning effects, resulting in magnetic-field-driven spin texture reversal reminiscent of "0" and "1" switching signals. In support of the micromagnetic simulation, direct explanation is offer to the variation in multi-level resistance under a microwave field, which is ascribed to the multi-spin texture magnetization structure and the randomly distributed APBs within the material. These novel 2D magnetite nanosheets with unique spin textures and spin dynamics provide an exciting platform for constructing real multi-level storage devices catering to emerging information storage and neuromorphic computing requirements.
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Affiliation(s)
- Zhiyan Jia
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
- International Iberian Nanotechnology Laboratory (INL)Braga4715‐330Portugal
| | - Qian Chen
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano‐Tech and Nano‐Bionics CASSuzhou215123China
| | - Wenjie Wang
- International Iberian Nanotechnology Laboratory (INL)Braga4715‐330Portugal
- College of ScienceChina Agricultural UniversityBeijing100083China
| | - Rong Sun
- International Iberian Nanotechnology Laboratory (INL)Braga4715‐330Portugal
| | - Zichao Li
- Institute of Ion Beam Physics and Materials ResearchHelmholtz‐Zentrum Dresden‐RossendorfBautzner Landstrasse 400D‐01328DresdenGermany
| | - René Hübner
- Institute of Ion Beam Physics and Materials ResearchHelmholtz‐Zentrum Dresden‐RossendorfBautzner Landstrasse 400D‐01328DresdenGermany
| | - Shengqiang Zhou
- Institute of Ion Beam Physics and Materials ResearchHelmholtz‐Zentrum Dresden‐RossendorfBautzner Landstrasse 400D‐01328DresdenGermany
| | - Miming Cai
- Department of PhysicsBeijing Normal UniversityBeijing100875China
| | - Weiming Lv
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano‐Tech and Nano‐Bionics CASSuzhou215123China
| | - Zhipeng Yu
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano‐Tech and Nano‐Bionics CASSuzhou215123China
| | - Fang Zhang
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Mengfan Zhao
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Sen Tian
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Lixuan Liu
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Zhongming Zeng
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano‐Tech and Nano‐Bionics CASSuzhou215123China
| | - Yong Jiang
- Institute of Quantum Materials and DevicesSchool of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Zhongchang Wang
- International Iberian Nanotechnology Laboratory (INL)Braga4715‐330Portugal
- School of ChemistryBeihang UniversityBeijing100191China
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8
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Chaluvadi SK, Chalil SP, Jana A, Dagur D, Vinai G, Motti F, Fujii J, Mezhoud M, Lüders U, Polewczyk V, Vobornik I, Rossi G, Bigi C, Hwang Y, Olsen T, Orgiani P, Mazzola F. Uncovering the Lowest Thickness Limit for Room-Temperature Ferromagnetism of Cr 1.6Te 2. NANO LETTERS 2024; 24:7601-7608. [PMID: 38870328 DOI: 10.1021/acs.nanolett.4c01005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
Metallic ferromagnetic transition metal dichalcogenides have emerged as important building blocks for scalable magnetic and memory applications. Downscaling such systems to the ultrathin limit is critical to integrate them into technology. Here, we achieved layer-by-layer control over the transition metal dichalcogenide Cr1.6Te2 by using pulsed laser deposition, and we uncovered the minimum critical thickness above which room-temperature magnetic order is maintained. The electronic and magnetic structures are explored experimentally and theoretically, and it is shown that the films exhibit strong in-plane magnetic anisotropy as a consequence of large spin-orbit effects. Our study elucidates both magnetic and electronic properties of Cr1.6Te2 and corroborates the importance of intercalation to tune the magnetic properties of nanoscale materials' architectures.
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Affiliation(s)
| | - Shyni Punathum Chalil
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- International Centre for Theoretical Physics (ICTP), Str. Costiera 11, I-34151 Trieste, Italy
| | - Anupam Jana
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- International Centre for Theoretical Physics (ICTP), Str. Costiera 11, I-34151 Trieste, Italy
| | - Deepak Dagur
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- Department of Physics, University of Trieste, Via Alfonso Valerio 2, 34127 Trieste, Italy
| | - Giovanni Vinai
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
| | - Federico Motti
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
| | - Jun Fujii
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
| | - Moussa Mezhoud
- CRISMAT Normandie Univ ENSICAEN UNICAEN CNRS CRISMAT, 14000 Caen, France
| | - Ulrike Lüders
- CRISMAT Normandie Univ ENSICAEN UNICAEN CNRS CRISMAT, 14000 Caen, France
| | - Vincent Polewczyk
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- Groupe d'Etude de la Matière Condensée (UMR 8635), Université deVersailles Saint-Quentin en Yvelines & CNRS, 78035 Versailles, France
| | - Ivana Vobornik
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
| | - Giorgio Rossi
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- Dipartimento di Fisica, Università degli studi di Milano, IT-20133 Milano, Italy
| | - Chiara Bigi
- Synchrotron SOLEIL, F-91190 Saint-Aubin, France
| | - Younghun Hwang
- Electricity and Electronics and Semiconductor Applications, Ulsan College, Ulsan 44610, Republic of Korea
| | - Thomas Olsen
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Pasquale Orgiani
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
| | - Federico Mazzola
- CNR-IOM Istituto Officina dei Materiali, Area Science Park, I-34149 Trieste, Italy
- Department of Molecular Sciences and Nanosystems, Ca' Foscari University of Venice, I-30172 Venice, Italy
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9
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Liu C, Li Z, Chen Z, Hu J, Duan H, Wang C, Feng S, Liu R, Zhang G, Cao J, Niu Y, Li Q, Li P, Yan W. Realizing Room-Temperature Ferromagnetism in Molecular-Intercalated Antiferromagnet VOCl. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405284. [PMID: 38925592 DOI: 10.1002/adma.202405284] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2024] [Revised: 06/20/2024] [Indexed: 06/28/2024]
Abstract
2D van der Waals (vdW) magnets are gaining attention in fundamental physics and advanced spintronics, due to their unique dimension-dependent magnetism and potential for ultra-compact integration. However, achieving intrinsic ferromagnetism with high Curie temperature (TC) remains a technical challenge, including preparation and stability issues. Herein, an applicable electrochemical intercalation strategy to decouple interlayer interaction and guide charge doping in antiferromagnet VOCl, thereby inducing robust room-temperature ferromagnetism, is developed. The expanded vdW gap isolates the neighboring layers and shrinks the distance between the V-V bond, favoring the generation of ferromagnetic (FM) coupling with perpendicular magnetic anisotropy. Element-specific X-ray magnetic circular dichroism (XMCD) directly proves the source of the ferromagnetism. Detailed experimental results and density functional theory (DFT) calculations indicate that the charge doping enhances the FM interaction by promoting the orbital hybridization between t2 g and eg. This work sheds new light on a promising way to achieve room-temperature ferromagnetism in antiferromagnets, thus addressing the critical materials demand for designing spintronic devices.
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Affiliation(s)
- Chaocheng Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
| | - Zhi Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
| | - Zheng Chen
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, China
| | - Jiyu Hu
- School of Physics and Materials Engineering, Hefei Normal University, Hefei, 230601, China
| | - Hengli Duan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
| | - Chao Wang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
| | - Sihua Feng
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
| | - Ruiqi Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
| | - Guobin Zhang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
| | - Jiefeng Cao
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China
| | - Yuran Niu
- MAX IV Laboratory, Lund University, Lund, 22100, Sweden
| | - Qian Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
| | - Pai Li
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
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10
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Goswami A, Ng N, Yakubu E, Bassen G, Guchhait S. Quasi-2D-Ising-type magnetic critical behavior in trigonal Cr1.27Te2. J Chem Phys 2024; 160:214704. [PMID: 38828825 DOI: 10.1063/5.0208764] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Accepted: 05/09/2024] [Indexed: 06/05/2024] Open
Abstract
Single crystal Cr1.27Te2 samples were synthesized by using the chemical vapor transport method. Single crystal x-ray diffraction studies show a trigonal crystal structure with a P3̄m1 symmetry space group. We then systematically investigate magnetic properties and critical behaviors of single crystal Cr1.27Te2 around its paramagnetic-to-ferromagnetic phase transition. The Arrott plot indicates a second-order magnetic phase transition. We estimate critical exponents β = 0.2631 ± 0.002, γ = 1.2314 ± 0.007, and TC = 168.48 ± 0.031 K by using the Kouvel-Fisher method. We also estimate other critical exponents δ = 5.31 ± 0.004 by analyzing the critical isotherm at TC = 168.5 K. We further verify the accuracy of our estimated critical exponents by the scaling analysis. Further analysis suggests that Cr1.27Te2 can be best described as a quasi-2D Ising magnetic system.
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Affiliation(s)
- Anirban Goswami
- Department of Physics and Astronomy, Howard University, Washington, District of Columbia 20059, USA
| | - Nicholas Ng
- Department of Chemistry, The Johns Hopkins University, Baltimore, Maryland 21218, USA
- Institute for Quantum Matter, The William H. Miller III Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - Emmanuel Yakubu
- Department of Physics and Astronomy, Howard University, Washington, District of Columbia 20059, USA
| | - Gregory Bassen
- Department of Chemistry, The Johns Hopkins University, Baltimore, Maryland 21218, USA
- Institute for Quantum Matter, The William H. Miller III Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - Samaresh Guchhait
- Department of Physics and Astronomy, Howard University, Washington, District of Columbia 20059, USA
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11
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Zhu M, Li Q, Guo K, Chen B, He K, Yi C, Lu P, Li X, Lu J, Li J, Wu R, Liu X, Liu Y, Liao L, Li B, Duan X. Two-Dimensional Ultrathin Fe 3Sn 2 Kagome Metal with Defect-Dependent Magnetic Property. NANO LETTERS 2024. [PMID: 38842926 DOI: 10.1021/acs.nanolett.4c01765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Two-dimensional (2D) Fe3Sn2, which is a room-temperature ferromagnetic kagome metal, has potential applications in spintronic devices. However, the systematic synthesis and magnetic study of 2D Fe3Sn2 single crystals have rarely been reported. Here we have synthesized 2D hexagonal and triangular Fe3Sn2 nanosheets by controlling the amount of FeCl2 precursors in the chemical vapor deposition (CVD) method. It is found that the hexagonal Fe3Sn2 nanosheets exist with Fe vacancy defects and show no obvious coercivity. While the triangular Fe3Sn2 nanosheet has obvious hysteresis loops at room temperature, its coercivity first increases and then remains stable with an increase in temperature, which should result from the competition of the thermal activation mechanism and spin direction rotation mechanism. A first-principles calculation study shows that the Fe vacancy defects in Fe3Sn2 can increase the distances between Fe atoms and weaken the ferromagnetism of Fe3Sn2. The resulting 2D Fe3Sn2 nanosheets provide a new choice for spintronic devices.
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Affiliation(s)
- Manli Zhu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Qiuqiu Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Kaiwen Guo
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Bailian Chen
- School of Design, Hunan University, Changsha 410082, People's Republic of China
| | - Kun He
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Chen Yi
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Ping Lu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Xingyun Li
- DongGuan Institute of GuangDong Institute of Metrology, Dongguan 523343, People's Republic of China
| | - Jiwu Lu
- School of Design, Hunan University, Changsha 410082, People's Republic of China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ruixia Wu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Xingqiang Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Lei Liao
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Bo Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, People's Republic of China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
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12
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Wang D, Wang X, Hu B, Wang J, Zou Y, Guo J, Li Z, Wang S, Li Y, Song G, Wang H, Liu Y. Strain- and Electron Doping-Induced In-Plane Spin Orientation at Room Temperature in Single-Layer CrTe 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:28791-28797. [PMID: 38783664 DOI: 10.1021/acsami.4c01034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Ferromagnets with a Curie temperature surpassing room temperature (RT) are highly sought after for advancing planar spintronics. The ultrathin CrTe2 is proposed as a promising two-dimensional (2D) ferromagnet with a Curie temperature above 300 K. However, its single-layer film is highly susceptible to specific external perturbations, leading to variable magnetic features depending on the environment. The magnetic ordering of single-layer CrTe2 remains a topic of debate, and experimental confirmation of ferromagnetic order at RT is still pending. In our study, we utilized molecular beam epitaxy to create a single-layer 1T-CrTe2 on bilayer graphene, demonstrating ferromagnetism above 300 K with in-plane magnetization through superconducting quantum interference devices (SQUID) measurements. Our density functional theory (DFT) calculations suggest that the ferromagnetic properties stem from epitaxial strain, which increases the distance between adjacent Cr atoms within the layer by about 1.6% and enhances the Cr-Te-Cr angle by approximately 1.6°. Due to its interaction with the graphene substrate, the magnetic moment transitions from an out-of-plane to an in-plane orientation, while electronic doping exceeds 1.5 e/u.c. Combining DFT calculations with in situ scanning tunneling microscopy (STM) characterizations allowed us to determine the configuration of the CrTe2 single layer on graphene. This discovery presents the first experimental proof of ferromagnetic order in single-layer CrTe2 with a Curie temperature above RT, laying the groundwork for future applications of CrTe2 single-layer-based spintronic devices.
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Affiliation(s)
- Donghui Wang
- College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Xin Wang
- College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Bingxi Hu
- College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Jiaxuan Wang
- Department of Physics, Capital Normal University, Beijing 100048, P. R. China
| | - Yuxiao Zou
- Kunming Institute of Physics, Kunming 650223, P. R. China
| | - Jin Guo
- Department of Physics, Capital Normal University, Beijing 100048, P. R. China
| | - Zezhong Li
- College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Shuting Wang
- College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Yunliang Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Guofeng Song
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Hai Wang
- Department of Physics, Capital Normal University, Beijing 100048, P. R. China
| | - Ying Liu
- College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
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13
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Canetta A, Volosheniuk S, Satheesh S, Alvarinhas Batista JP, Castellano A, Conte R, Chica DG, Watanabe K, Taniguchi T, Roy X, van der Zant HSJ, Burghard M, Verstraete MJ, Gehring P. Impact of Spin-Entropy on the Thermoelectric Properties of a 2D Magnet. NANO LETTERS 2024; 24:6513-6520. [PMID: 38652810 DOI: 10.1021/acs.nanolett.4c00809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
Heat-to-charge conversion efficiency of thermoelectric materials is closely linked to the entropy per charge carrier. Thus, magnetic materials are promising building blocks for highly efficient energy harvesters as their carrier entropy is boosted by a spin degree of freedom. In this work, we investigate how this spin-entropy impacts heat-to-charge conversion in the A-type antiferromagnet CrSBr. We perform simultaneous measurements of electrical conductance and thermocurrent while changing magnetic order using the temperature and magnetic field as tuning parameters. We find a strong enhancement of the thermoelectric power factor at around the Néel temperature. We further reveal that the power factor at low temperatures can be increased by up to 600% upon applying a magnetic field. Our results demonstrate that the thermoelectric properties of 2D magnets can be optimized by exploiting the sizable impact of spin-entropy and confirm thermoelectric measurements as a sensitive tool to investigate subtle magnetic phase transitions in low-dimensional magnets.
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Affiliation(s)
- Alessandra Canetta
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium
| | - Serhii Volosheniuk
- Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands
| | - Sayooj Satheesh
- Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany
| | | | - Aloïs Castellano
- Nanomat/Q-MAT/ and European Theoretical Spectroscopy Facility, Université de Liège, B-4000, Liège, Belgium
| | - Riccardo Conte
- Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands
| | - Daniel George Chica
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Herre S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands
| | - Marko Burghard
- Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany
| | - Matthieu Jean Verstraete
- Nanomat/Q-MAT/ and European Theoretical Spectroscopy Facility, Université de Liège, B-4000, Liège, Belgium
- ITP, Physics Department, Utrecht University, 3508 TA Utrecht, The Netherlands
| | - Pascal Gehring
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium
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14
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Zhang X, Li Y, Lu Q, Xiang X, Sun X, Tang C, Mahdi M, Conner C, Cook J, Xiong Y, Inman J, Jin W, Liu C, Cai P, Santos EJG, Phatak C, Zhang W, Gao N, Niu W, Bian G, Li P, Yu D, Long S. Epitaxial Growth of Large-Scale 2D CrTe 2 Films on Amorphous Silicon Wafers With Low Thermal Budget. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311591. [PMID: 38426690 DOI: 10.1002/adma.202311591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Revised: 01/27/2024] [Indexed: 03/02/2024]
Abstract
2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO2) and silicon nitride (SiNx). Here, a seeded growth technique for crystallizing CrTe2 films on amorphous SiNx/Si and SiO2/Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin-orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 × 107 ℏ/2e Ω⁻¹ m⁻¹), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.
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Affiliation(s)
- Xiaoqian Zhang
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Yue Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Qiangsheng Lu
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
- Material Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Xueqiang Xiang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Xiaozhen Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Chunli Tang
- Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, 36849, USA
| | - Muntasir Mahdi
- Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, 36849, USA
| | - Clayton Conner
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Jacob Cook
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Yuzan Xiong
- Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC, 27599, USA
| | - Jerad Inman
- Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC, 27599, USA
- Department of Physics, Oakland University, Rochester, MI, 48309, USA
| | - Wencan Jin
- Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, 36849, USA
- Department of Physics, Auburn University, Auburn, AL, 36849, USA
| | - Chang Liu
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - PeiYu Cai
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
| | - Elton J G Santos
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Higgs Centre for Theoretical Physics, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, 20018, Basque Country, Spain
| | - Charudatta Phatak
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Wei Zhang
- Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC, 27599, USA
- Department of Physics, Oakland University, Rochester, MI, 48309, USA
| | - Nan Gao
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Wei Niu
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Guang Bian
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Peng Li
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Shibing Long
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
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15
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Zhou X, Jiang T, Tao Y, Ji Y, Wang J, Lai T, Zhong D. Evidence of Ferromagnetism and Ultrafast Dynamics of Demagnetization in an Epitaxial FeCl 2 Monolayer. ACS NANO 2024; 18:10912-10920. [PMID: 38613502 DOI: 10.1021/acsnano.4c01436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/15/2024]
Abstract
The development of two-dimensional (2D) magnetism is driven not only by the interest of low-dimensional physics but also by potential applications in high-density miniaturized spintronic devices. However, 2D materials possessing a ferromagnetic order with a relatively high Curie temperature (Tc) are rare. In this paper, the evidence of ferromagnetism in monolayer FeCl2 on Au(111) surfaces, as well as the interlayer antiferromagnetic coupling of bilayer FeCl2, is characterized by using spin-polarized scanning tunneling microscopy. A Curie temperature (Tc) of ∼147 K is revealed for monolayer FeCl2, based on our static magneto-optical Kerr effect measurements. Furthermore, temperature-dependent magnetization dynamics is investigated by the time-resolved magneto-optical Kerr effect. A transition from one- to two-step demagnetization occurs as the lattice temperature approaches Tc, which supports the Elliott-Yafet spin relaxation mechanism. The findings contribute to a deeper understanding of the underlying mechanisms governing ultrafast magnetization in 2D ferromagnetic materials.
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Affiliation(s)
- Xuhan Zhou
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Guangzhou No. 89 Secondary School, Guangzhou 510520, China
| | - Tianran Jiang
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Ye Tao
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Yi Ji
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Jingying Wang
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Tianshu Lai
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Dingyong Zhong
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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16
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Matsuoka H, Kajihara S, Nomoto T, Wang Y, Hirayama M, Arita R, Iwasa Y, Nakano M. Band-driven switching of magnetism in a van der Waals magnetic semimetal. SCIENCE ADVANCES 2024; 10:eadk1415. [PMID: 38608018 PMCID: PMC11014443 DOI: 10.1126/sciadv.adk1415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 03/13/2024] [Indexed: 04/14/2024]
Abstract
Magnetic semimetals form an attractive class of materials because of the nontrivial contributions of itinerant electrons to magnetism. Because of their relatively low-carrier-density nature, a doping level of those materials could be largely tuned by a gating technique. Here, we demonstrate gate-tunable ferromagnetism in an emergent van der Waals magnetic semimetal Cr3Te4 based on an ion-gating technique. Upon doping electrons into the system, the Curie temperature (TC) sharply increases, approaching near to room temperature, and then decreases to some extent. This non-monotonous variation of TC accompanies the switching of the magnetic anisotropy, synchronously followed by the sign changes of the ordinary and anomalous Hall effects. Those results clearly elucidate that the magnetism in Cr3Te4 should be governed by its semimetallic band nature.
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Affiliation(s)
- Hideki Matsuoka
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Shun Kajihara
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Takuya Nomoto
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo 153-8904, Japan
| | - Yue Wang
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Motoaki Hirayama
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Ryotaro Arita
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo 153-8904, Japan
| | - Yoshihiro Iwasa
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Masaki Nakano
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
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17
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Zhai W, Li Z, Wang Y, Zhai L, Yao Y, Li S, Wang L, Yang H, Chi B, Liang J, Shi Z, Ge Y, Lai Z, Yun Q, Zhang A, Wu Z, He Q, Chen B, Huang Z, Zhang H. Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides. Chem Rev 2024; 124:4479-4539. [PMID: 38552165 DOI: 10.1021/acs.chemrev.3c00931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.
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Affiliation(s)
- Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Lixin Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yiyao Ge
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhiying Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Bo Chen
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhiqi Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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18
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Cui F, He K, Wu S, Zhang H, Lu Y, Li Z, Hu J, Pan S, Zhu L, Huan Y, Li B, Duan X, Ji Q, Zhao X, Zhang Y. Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides. ACS NANO 2024; 18:6276-6285. [PMID: 38354364 DOI: 10.1021/acsnano.3c10609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Emerging 2D chromium-based dichalcogenides (CrXn (X = S, Se, Te; 0 < n ≤ 2)) have provoked enormous interests due to their abundant structures, intriguing electronic and magnetic properties, excellent environmental stability, and great application potentials in next generation electronics and spintronics devices. Achieving stoichiometry-controlled synthesis of 2D CrXn is of paramount significance for such envisioned investigations. Herein, we report the stoichiometry-controlled syntheses of 2D chromium selenide (CrxSey) materials (rhombohedral Cr2Se3 and monoclinic Cr3Se4) via a Cr-self-intercalation route by designing two typical chemical vapor deposition (CVD) strategies. We have also clarified the different growth mechanisms, distinct chemical compositions, and crystal structures of the two type materials. Intriguingly, we reveal that the ultrathin Cr2Se3 nanosheets exhibit a metallic feature, while the Cr3Se4 nanosheets present a transition from p-type semiconductor to metal upon increasing the flake thickness. Moreover, we have also uncovered the ferromagnetic properties of 2D Cr2Se3 and Cr3Se4 below ∼70 K and ∼270 K, respectively. Briefly, this research should promote the stoichiometric-ratio controllable syntheses of 2D magnetic materials, and the property explorations toward next generation spintronics and magneto-optoelectronics related applications.
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Affiliation(s)
- Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Kun He
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Shengqiang Wu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Hongmei Zhang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Zhenzhu Li
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies and School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Bo Li
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
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19
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Song L, Zhao Y, Du R, Li H, Li X, Feng W, Yang J, Wen X, Huang L, Peng Y, Sun H, Jiang Y, He J, Shi J. Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr 2S 3/WS 2 Vertical Heterostructures. NANO LETTERS 2024; 24:2408-2414. [PMID: 38329291 DOI: 10.1021/acs.nanolett.3c05105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
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20
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Jiang Q, Yang H, Xue W, Yang R, Shen J, Zhang X, Li RW, Xu X. Controlled Growth of Submillimeter-Scale Cr 5Te 8 Nanosheets and the Domain Wall Nucleation Governed Magnetization Reversal Process. NANO LETTERS 2024; 24:1246-1253. [PMID: 38198620 DOI: 10.1021/acs.nanolett.3c04200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Two-dimensional (2D) ferromagnets have attracted widespread attention for promising applications in compact spintronic devices. However, the controlled synthesis of high-quality, large-sized, and ultrathin 2D magnets via facile, economical method remains challenging. Herein, we develop a hydrogen-tailored chemical vapor deposition approach to fabricating 2D Cr5Te8 ferromagnetic nanosheets. Interestingly, the time period of introducing hydrogen was found to be crucial for controlling the lateral size, and a Cr5Te8 single-crystalline nanosheet of lateral size up to ∼360 μm with single-unit-cell thickness has been obtained. These samples exhibit a leading role of domain wall nucleation in governing the magnetization reversal process, providing important references for optimizing the performances of associated devices. The nanosheets also show notable magnetotransport response, including nonmonotonous magnetic-field-dependent magnetoresistance and sizable anomalous Hall resistivity, demonstrating Cr5Te8 as a promising material for constructing high-performance magnetoelectronic devices. This study presents a breakthrough of large-sized CVD-grown 2D magnetic materials, which is indispensable for constructing 2D spintronic devices.
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Affiliation(s)
- Qitao Jiang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Huali Yang
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Wuhong Xue
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Ruilong Yang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Jianlei Shen
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Xueying Zhang
- Zhongfa Aviation Institute, Beihang University, Hangzhou 311115, China
| | - Run-Wei Li
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
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21
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Yan S, He HH, Fu Y, Zhao NN, Tian S, Yin Q, Meng F, Cao X, Wang L, Chen S, Son KH, Choi JW, Ryu H, Wang S, Lei H, Liu K, Zhang X. Near-room temperature ferromagnetism and a tunable anomalous Hall effect in atomically thin Fe 4CoGeTe 2. NANOSCALE 2024; 16:1406-1414. [PMID: 38165953 DOI: 10.1039/d3nr03594h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Itinerant ferromagnetism at room temperature is a key factor for spin transport and manipulation. Here, we report the realization of near-room temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (∼323 K-337 K) is almost unchanged when the thickness is as low as 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical calculations further indicate that the ferromagnetism persists in monolayer Fe4CoGeTe2. In addition to the robust ferromagnetism down to the ultrathin limit, Fe4CoGeTe2 exhibits an unusual temperature- and thickness-dependent intrinsic anomalous Hall effect. We propose that it could be ascribed to the dependence of the band structure on thickness that changes the Berry curvature near the Fermi energy level subtly. The near-room temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 provide opportunities to understand the exotic transport properties of two-dimensional van der Waals magnetic materials and explore their potential applications in spintronics.
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Affiliation(s)
- Shaohua Yan
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Hui-Hui He
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Yang Fu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Ning-Ning Zhao
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Shangjie Tian
- Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Qiangwei Yin
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Fanyu Meng
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Xinyu Cao
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Le Wang
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Shanshan Chen
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Ki-Hoon Son
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Jun Woo Choi
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Shouguo Wang
- Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Hechang Lei
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Kai Liu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Xiao Zhang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
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22
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Lee JE, Yan S, Oh S, Hwang J, Denlinger JD, Hwang C, Lei H, Mo SK, Park SY, Ryu H. Electronic Structure of Above-Room-Temperature van der Waals Ferromagnet Fe 3GaTe 2. NANO LETTERS 2023; 23:11526-11532. [PMID: 38079244 DOI: 10.1021/acs.nanolett.3c03203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Fe3GaTe2, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature (TC). In this study, we reveal the electronic structure of Fe3GaTe2 in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction (Jex) and magnetic anisotropy energy to the development of the high-TC ferromagnetic ordering in Fe3GaTe2. Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. These findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-TC ferromagnetic ordering in Fe3GaTe2.
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Affiliation(s)
- Ji-Eun Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Shaohua Yan
- Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Sehoon Oh
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul 06978, Korea
| | - Jinwoong Hwang
- Department of Physics, Kangwon National University, Chuncheon 24341, Korea
| | - Jonathan D Denlinger
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan 46241, Korea
- Quantum Matter Core Facility, Pusan National University, Busan 46241, Korea
| | - Hechang Lei
- Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Se Young Park
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul 06978, Korea
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
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23
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Tian S, Wang W, Zhao M, Han Y, Tian Y, Ji S, Yao L, Liu L, Ling F, Jia Z, Zhang F. Room-temperature ferromagnetic CoSe 2nanoplates synthesized by chemical vapor deposition. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:135802. [PMID: 38064749 DOI: 10.1088/1361-648x/ad13d5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Accepted: 12/08/2023] [Indexed: 12/23/2023]
Abstract
Among novel two-dimensional materials, transition metal dichalcogenides (TMDs) with 3dmagnetic elements have been extensively researched owing to their unique magnetic, electric, and photoelectric properties. As an important member of TMDs, CoSe2is an interesting material with controversial magnetic properties, hitherto there are few reports related to the magnetism of CoSe2materials. Here, we report the synthesis of CoSe2nanoplates on Al2O3substrates by chemical vapor deposition (CVD). The CVD-grown CoSe2nanoplates exhibit three typical morphologies (regular hexagonal, hexagonal, and pentagonal shapes) and their lateral sizes and thickness of CoSe2nanoplates can reach up to hundreds of microns and several hundred nanometers, respectively. The electric-transport measurement shows a metallic feature of CoSe2nanoplates. Furthermore, the slanted hysteresis loop and nonzero remnant magnetization of the CoSe2nanoplates confirm the ferromagnetism in the temperature range of 5-400 K. This work provides a novel platform for designing CoSe2-based spintronic devices and studying related magnetic mechanisms.
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Affiliation(s)
- Sen Tian
- Institute of Quantum Materials and Devices, Tiangong University, Tianjin 300387, People's Republic of China
| | - Wenjie Wang
- College of Science, China Agricultural University, Beijing 100083, People's Republic of China
| | - Mengfan Zhao
- Institute of Quantum Materials and Devices, Tiangong University, Tianjin 300387, People's Republic of China
| | - Yilin Han
- Institute of Quantum Materials and Devices, Tiangong University, Tianjin 300387, People's Republic of China
| | - Yuxin Tian
- Institute of Quantum Materials and Devices, Tiangong University, Tianjin 300387, People's Republic of China
| | - Shengxiang Ji
- Institute of Quantum Materials and Devices, Tiangong University, Tianjin 300387, People's Republic of China
| | - Liang Yao
- Institute of Quantum Materials and Devices, Tiangong University, Tianjin 300387, People's Republic of China
| | - Lixuan Liu
- Institute of Quantum Materials and Devices, Tiangong University, Tianjin 300387, People's Republic of China
| | - Feifei Ling
- Hebei Technology Innovation Center of Phase Change Thermal Management of Data Center, Hebei University of Water Resources and Electric Engineering, Cangzhou 061001, People's Republic of China
| | - Zhiyan Jia
- Institute of Quantum Materials and Devices, Tiangong University, Tianjin 300387, People's Republic of China
| | - Fang Zhang
- Institute of Quantum Materials and Devices, Tiangong University, Tianjin 300387, People's Republic of China
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24
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Xie J, Wu D, Liao Y, Cao X, Zhou S. Charge doping and electric field tunable ferromagnetism and Curie temperature of the MnS 2 monolayer. Phys Chem Chem Phys 2023; 26:267-277. [PMID: 38059372 DOI: 10.1039/d3cp04382g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
Two-dimensional ferromagnets with a long-range ferromagnetic ordering at finite temperature present a bright prospect for their potential applications in nanoscale spintronic devices. The tuning of their intrinsic ferromagnetism and Curie temperature is essential for the development of next-generation data storage and spintronic devices. In this work, the electronic structures, ferromagnetism and Curie temperature of two-dimensional MnS2 monolayer are controlled by charge doping and electric field using first principles calculations. The results show that the dynamic and thermal stability of monolayer MnS2 for all of the cases can be still maintained. Moreover, there is no existence of phase transition and all MnS2 monolayers at any charge doping concentrations and electric field intensities favor ferromagnetic coupling. For the manipulation of electron doping, the calculated total magnetic moment Mtot of the MnS2 monolayer exhibits an increase from 3.112 to 3.491μB per unit cell. Further analysis indicates that a transition from half-metal to metal occurs by introducing the charge doping and vertical electric field, and the Mn 3d electronic states are the major determinants of ferromagnetism. Additionally, the charge doping enables the magnetic anisotropy energy to transform from an in-plane easy axis to the magnetization direction out of the plane. The Curie temperature Tc of the MnS2 monolayer can be moderately enhanced above room temperature by hole doping and application of a vertical electric field. Remarkably, Tc reaches its peak at 767 K at a hole doping concentration of -0.8e. This work enriches the microscopic understanding of the tuning mechanism of ferromagnetism and supplies a sound theoretical basis for subsequent experimental studies.
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Affiliation(s)
- Jing Xie
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Dongni Wu
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Yangfang Liao
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Xiaolong Cao
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Shiyou Zhou
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
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25
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Li W, Zhu W, Zhang G, Wu H, Zhu S, Li R, Zhang E, Zhang X, Deng Y, Zhang J, Zhao L, Chang H, Wang K. Room-Temperature van der Waals Ferromagnet Switching by Spin-Orbit Torques. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303688. [PMID: 37890473 DOI: 10.1002/adma.202303688] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 10/12/2023] [Indexed: 10/29/2023]
Abstract
The emerging wide varieties of the van der Waals (vdW) magnets with atomically thin and smooth interfaces hold great promise for next-generation spintronic devices. However, due to the lower Curie temperature of the vdW ferromagnets than room temperature, electrically manipulating its magnetization at room temperature has not been realized. In this work, it is demonstrated that the perpendicular magnetization of the vdW ferromagnet Fe3 GaTe2 can be effectively switched at room temperature in the Fe3 GaTe2 /Pt bilayer by spin-orbit torques (SOTs) with a relatively low current density of 1.3 × 107 A cm-2 . Moreover, the high SOT efficiency of ξDL ≈ 0.28 is quantitatively determined by harmonic measurements, which is higher than those in Pt-based heavy metal/conventional ferromagnet devices. The findings of room-temperature vdW ferromagnet switching by SOTs provide a significant basis for the development of vdW-ferromagnet-based spintronic applications.
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Affiliation(s)
- Weihao Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wenkai Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Gaojie Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wu
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Shouguo Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runze Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Enze Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaomin Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongcheng Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jing Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Lixia Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- School of Electrical and Electronic Engineering, Tiangong University, Tianjin, 300387, China
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Kaiyou Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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26
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Zhang L, Zhao Y, Liu Y, Gao G. High spin polarization, large perpendicular magnetic anisotropy and room-temperature ferromagnetism by biaxial strain and carrier doping in Janus MnSeTe and MnSTe. NANOSCALE 2023; 15:18910-18919. [PMID: 37975757 DOI: 10.1039/d3nr04627c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
The emerging two-dimensional (2D) Janus systems with broken symmetry provide a new platform for designing ultrathin multifunctional spintronic materials. Recently, based on experimental monolayer MnSe2, ferromagnetism was predicted in Janus MnXY (X ≠ Y = S, Se, Te) monolayers; however, they exhibit low Curie temperatures and small magnetic anisotropic energies. To improve the Curie temperature and magnetic anisotropy, herein, we systemically explore the stability and electronic and magnetic properties of Janus MnSeTe and MnSTe monolayers under strain and carrier-doping using first-principles calculations and Monte Carlo simulations. It is found that both MnSeTe and MnSTe monolayers possess robustly high spin polarization with rational strain and carrier-doping. Both tensile strain and hole doping strengthen the ferromagnetic super-exchange interactions of the two nearest Mn atoms mediated by chalcogen atoms and exceedingly improve the perpendicular magnetic anisotropic energies (by up to 3.1 meV per f.u. for MnSeTe and 2.0 meV per f.u. for MnSTe). The Te-5p intraorbital hybridizations contributed to the main magnetic anisotropy. More remarkably, the tensile strain and hole doping collectively increase the Curie temperatures of MnSeTe and MnSTe to above and near room temperature (345 and 290 K, respectively). The present study reveals that Janus MnSeTe and MnSTe monolayers with robustly high spin polarization, room-temperature ferromagnetism and large perpendicular magnetic anisotropy are promising candidates for ultrathin multifunctional spintronic materials. This study will be of great interest for further experimental and theoretical explorations of 2D Janus manganese dichalcogenides.
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Affiliation(s)
- Long Zhang
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yan Zhao
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yuqi Liu
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Guoying Gao
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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27
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Yang J, Wang X, Li S, Wang X, Pan M, Ai M, Yuan H, Peng X, Wang R, Li Q, Zheng F, Zhang P. Robust Two-Dimensional Ferromagnetism in Cr 5Te 8/CrTe 2 Heterostructure with Curie Temperature above 400 K. ACS NANO 2023; 17:23160-23168. [PMID: 37926969 DOI: 10.1021/acsnano.3c09654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2023]
Abstract
The discovery of ferromagnetism in two-dimensional (2D) van der Waals crystals has generated widespread interest. The seeking of robust 2D ferromagnets with high Curie temperature (Tc) is vitally important for next-generation spintronic devices. However, owing to the enhanced spin fluctuation and weak exchange interaction upon the reduced dimensionalities, the exploring of robust 2D ferromagnets with Tc > 300 K is highly demanded but remains challenging. In this work, we fabricated air-stable 2D Cr5Te8/CrTe2 vertical heterojunctions with Tc above 400 K by the chemical vapor deposition method. Transmission electron microscopy demonstrates a high-quality-crystalline epitaxial structure between tri-Cr5Te8 and 1T-CrTe2 with striped moiré patterns and a superior ambient stability over six months. A built-in dual-axis strain together with strong interfacial coupling cooperatively leads to a record-high Tc for the CrxTey family. A temperature-dependent spin-flip process induces the easy axis of magnetization to rotate from the out-of-plane to the in-plane direction, indicating a phase-dependent proximity coupling effect, rationally interpreted by first-principles calculations of the magnetic anisotropy of a tri-Cr5Te8 and 1T-CrTe2 monolayer. Our results provide a material realization of effectively enhancing the transition temperature of 2D ferromagnetism and manipulating the spin-flip of the easy axis, which will facilitate future spintronic applications.
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Affiliation(s)
- Jielin Yang
- School of Physics, Hubei University, Wuhan 430062, China
| | - Xinyu Wang
- School of Physics, Hubei University, Wuhan 430062, China
| | - Shujing Li
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
| | - Xina Wang
- School of Physics, Hubei University, Wuhan 430062, China
| | - Minghu Pan
- School of Physics & Information Technology, Shaanxi Normal University, Xi'an 710119, China
| | - Mingzhong Ai
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Hui Yuan
- School of Physics, Hubei University, Wuhan 430062, China
| | - Xiaoniu Peng
- School of Physics, Hubei University, Wuhan 430062, China
| | - Ruilong Wang
- School of Physics, Hubei University, Wuhan 430062, China
| | - Quan Li
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Fawei Zheng
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
| | - Ping Zhang
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
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28
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Wang Y, Xu W, Yang D, Zhang Y, Xu Y, Cheng Z, Mi X, Wu Y, Liu Y, Hao Y, Han GQ. Above-Room-Temperature Strong Ferromagnetism in 2D MnB Nanosheet. ACS NANO 2023. [PMID: 38010743 DOI: 10.1021/acsnano.3c10218] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Two-dimensional (2D) room-temperature (RT) ferromagnetic materials have amassed considerable interest in the field of fundamental physics for applications in next-generation spintronic devices owing to their physical properties. However, realizing strong RT ferromagnetism and a high Curie temperature (TC) in these 2D magnetic materials remains challenging. Herein, we develop a 2D MnB nanosheet for known 2D ferromagnets that demonstrates strong RT ferromagnetism and a record-high above-RT TC of ∼585.9 K. Through magnetic force microscopy, clear evidence of ferromagnetic behavior is observed at room temperature. Structural characterization and density functional theory calculations further reveal that (i) after exfoliation of bulk, -OH functional groups were introduced in addition to Mn-B bonds being formed, which increases MnB nanosheet TC to 585.9 K and (ii) the d3↑ spin configuration of Mn mainly contributed to the magnetic moment of MnB, and the hybridization between the dxz (dyz) and dz2 orbitals of the Mn atom provides a large contribution to magnetic anisotropy, which stabilizes the magnetic property of MnB. Our findings establish a strong experimental foundation for 2D MnB nanosheets as ideal materials for the construction of spintronic devices.
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Affiliation(s)
- Yong Wang
- School of Microelectronics, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, People's Republic of China
- Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, People's Republic of China
| | - Wei Xu
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, People's Republic of China
| | - Dingyi Yang
- School of Microelectronics, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, People's Republic of China
- INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel Boulet, Varennes, Québec J3X 1P7, Canada
| | - Yu Zhang
- Department of Physics, Shaanxi University of Science and Technology, Xi'an 710021, People's Republic of China
| | - Yongjie Xu
- School of Education, Jiangsu Open University, Nanjing 210036, People's Republic of China
| | - Zixuan Cheng
- School of Microelectronics, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, People's Republic of China
- Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, People's Republic of China
| | - Xuke Mi
- School of Microelectronics, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, People's Republic of China
| | - Yizhang Wu
- Department of Applied Physical Sciences, The University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27514, United States
| | - Yan Liu
- School of Microelectronics, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, People's Republic of China
- Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, People's Republic of China
| | - Yue Hao
- School of Microelectronics, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, People's Republic of China
- Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, People's Republic of China
| | - Gen-Quan Han
- School of Microelectronics, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, People's Republic of China
- Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, People's Republic of China
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29
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Strasdas J, Pestka B, Rybak M, Budniak AK, Leuth N, Boban H, Feyer V, Cojocariu I, Baranowski D, Avila J, Dudin P, Bostwick A, Jozwiak C, Rotenberg E, Autieri C, Amouyal Y, Plucinski L, Lifshitz E, Birowska M, Morgenstern M. Electronic Band Structure Changes across the Antiferromagnetic Phase Transition of Exfoliated MnPS 3 Flakes Probed by μ-ARPES. NANO LETTERS 2023; 23:10342-10349. [PMID: 37922394 DOI: 10.1021/acs.nanolett.3c02906] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2023]
Abstract
Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, presumably due to their photochemical sensitivity. Here, we provide micrometer-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS3 above and below the Néel temperature down to one monolayer. Favorable comparison with density functional theory calculations enables identifying the orbital character of the observed bands. Consistently, we find pronounced changes across the Néel temperature for bands consisting of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films, demonstrating the predominant 2D character of MnPS3. The novel access is transferable to other MPX3 materials (M: transition metal, P: phosphorus, X: chalcogenide), providing several antiferromagnetic arrangements.
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Affiliation(s)
- Jeff Strasdas
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
| | - Benjamin Pestka
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
| | - Miłosz Rybak
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, WybrzeŻe Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Adam K Budniak
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Niklas Leuth
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
| | - Honey Boban
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Vitaliy Feyer
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Iulia Cojocariu
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Daniel Baranowski
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - José Avila
- Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, Gif sur Yvette, Paris F91192, France
| | - Pavel Dudin
- Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, Gif sur Yvette, Paris F91192, France
| | - Aaron Bostwick
- Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States
| | - Chris Jozwiak
- Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States
| | - Carmine Autieri
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Yaron Amouyal
- Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Lukasz Plucinski
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Efrat Lifshitz
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Magdalena Birowska
- Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Pasteura St. 5, 02-093 Warsaw, Poland
| | - Markus Morgenstern
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
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30
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Xiao G, Xiao WZ, Feng YX, Rong QY, Chen Q. Two-dimensional ferroelastic and ferromagnetic NiOX (X = Cl and Br) with half-metallicity and a high Curie temperature. NANOSCALE 2023; 15:17963-17971. [PMID: 37905430 DOI: 10.1039/d3nr03119e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
Two-dimensional (2D) multiferroic materials with distinctive properties, such as half-metallicity, high Curie temperature (TC), and magnetoelastic coupling, hold potential applications in novel nanoscale spintronic devices, but they are rare. Using density functional theory (DFT) calculations and evolutionary algorithms, we identify new types of 2D NiOX (X = F, Cl and Br) monolayers that are stable in energy, dynamics, thermodynamics, and mechanics. Among them, NiOF is an indirect-gap antiferromagnetic (AFM) semiconductor, while NiOCl and NiOBr are half-metallic materials with ferromagnetic (FM) ordering with a TC of 671 and 692 K and in-plane magnetic anisotropy energies (MAEs) of 541 and 609 μeV per Ni along the x-axis and y-axis, respectively. Notably, ferroelasticity is another important feature of NiOCl and NiOBr monolayers with energy barriers of 234.0 and 151.5 meV per atom, respectively. Moreover, the in-plane magnetic easy axis is strongly coupled to the lattice direction. The coexistence of high ferromagnetism, ferroelasticity, half-metallicity, and magnetoelastic coupling renders NiOCl and NiOBr monolayers great potential for future nanodevices.
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Affiliation(s)
- Gang Xiao
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, China.
| | - Wen-Zhi Xiao
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, China.
| | - Ying-Xue Feng
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, China.
| | - Qing-Yan Rong
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, China.
| | - Qiao Chen
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, China.
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31
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Tan C, Liao JH, Zheng G, Algarni M, Lin JY, Ma X, Mayes ELH, Field MR, Albarakati S, Panahandeh-Fard M, Alzahrani S, Wang G, Yang Y, Culcer D, Partridge J, Tian M, Xiang B, Zhao YJ, Wang L. Room-Temperature Magnetic Phase Transition in an Electrically Tuned van der Waals Ferromagnet. PHYSICAL REVIEW LETTERS 2023; 131:166703. [PMID: 37925723 DOI: 10.1103/physrevlett.131.166703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Revised: 04/10/2023] [Accepted: 09/06/2023] [Indexed: 11/07/2023]
Abstract
Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr_{1.2}Te_{2} observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron doping concentration up to 3.8×10^{21} cm^{-3}. We observed nonmonotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron doping, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a doping-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron doping in the Cr_{1.2}Te_{2}. The tunability of the magnetic properties and phase in room temperature magnetic vdW Cr_{1.2}Te_{2} is a significant step towards practical spintronic devices.
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Affiliation(s)
- Cheng Tan
- Lab of Low Dimensional Magnetism and Spintronic Devices, School of Physics, Hefei University of Technology, Hefei, Anhui 230009, China
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Ji-Hai Liao
- Department of Physics, South China University of Technology, Guangzhou 510640, China
| | - Guolin Zheng
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui 230031, China
| | - Meri Algarni
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria 3001, Australia
- Physics Department, Faculty of Science, Al-Baha University, Alaqiq 65779, Saudi Arabia
| | - Jia-Yi Lin
- Department of Physics, South China University of Technology, Guangzhou 510640, China
| | - Xiang Ma
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Edwin L H Mayes
- RMIT Microscopy & Microanalysis Facility, RMIT University, Melbourne, Victoria 3000, Australia
| | - Matthew R Field
- RMIT Microscopy & Microanalysis Facility, RMIT University, Melbourne, Victoria 3000, Australia
| | - Sultan Albarakati
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria 3001, Australia
- Physics Department, Faculty of Science and Arts, University of Jeddah, P.O. Box 80200, 21589 Khulais, Saudi Arabia
| | - Majid Panahandeh-Fard
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Saleh Alzahrani
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Guopeng Wang
- Department of Physics, School of Physics and Materials Science, Anhui University, Hefei, Anhui 230601, China
| | - Yuanjun Yang
- Lab of Low Dimensional Magnetism and Spintronic Devices, School of Physics, Hefei University of Technology, Hefei, Anhui 230009, China
| | - Dimitrie Culcer
- School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - James Partridge
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Mingliang Tian
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui 230031, China
- Department of Physics, School of Physics and Materials Science, Anhui University, Hefei, Anhui 230601, China
| | - Bin Xiang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou 510640, China
| | - Lan Wang
- Lab of Low Dimensional Magnetism and Spintronic Devices, School of Physics, Hefei University of Technology, Hefei, Anhui 230009, China
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria 3001, Australia
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32
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Feng X, Zhai B, Cheng R, Yin L, Wen Y, Jiang J, Wang H, Li Z, Zhu Y, He J. Phase Engineering of 2D Spinel-Type Manganese Oxides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304118. [PMID: 37437137 DOI: 10.1002/adma.202304118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Revised: 07/10/2023] [Accepted: 07/10/2023] [Indexed: 07/14/2023]
Abstract
2D magnetic materials have been of interest due to their unique long-range magnetic ordering in the low-dimensional regime and potential applications in spintronics. Currently, most studies are focused on strippable van der Waals magnetic materials with layered structures, which typically suffer from a poor stability and scarce species. Spinel oxides have a good environmental stability and rich magnetic properties. However, the isotropic bonding and close-packed nonlayered crystal structure make their 2D growth challenging, let alone the phase engineering. Herein, a phase-controllable synthesis of 2D single-crystalline spinel-type oxides is reported. Using the van der Waals epitaxy strategy, the thicknesses of the obtained tetragonal and hexagonal manganese oxide (Mn3 O4 ) nanosheets can be tuned down to 7.1 nm and one unit cell (0.7 nm), respectively. The magnetic properties of these two phases are evaluated using vibrating-sample magnetometry and first-principle calculations. Both structures exhibit a Curie temperature of 48 K. Owing to its ultrathin geometry, the Mn3 O4 nanosheet exhibits a superior ultraviolet detection performance with an ultralow noise power density of 0.126 pA Hz-1/2 . This study broadens the range of 2D magnetic semiconductors and highlights their potential applications in future information devices.
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Affiliation(s)
- Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhongwei Li
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yushan Zhu
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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Man P, Huang L, Zhao J, Ly TH. Ferroic Phases in Two-Dimensional Materials. Chem Rev 2023; 123:10990-11046. [PMID: 37672768 DOI: 10.1021/acs.chemrev.3c00170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.
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Affiliation(s)
- Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
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Guan Z, Shen Z, Xue Y, Zhong T, Wu X, Song C. Electronic properties, skyrmions and bimerons in Janus CrXY (X, Y = S, Se, Te, Cl, Br, I, and X ≠ Y) monolayers. Phys Chem Chem Phys 2023; 25:24968-24975. [PMID: 37697805 DOI: 10.1039/d3cp02470a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
Using first-principles calculations, we systematically investigate the electronic properties, chiral skyrmions and bimerons in two-dimensional (2D) Janus CrXY (X, Y = S, Se, Te, Cl, Br, I, and X ≠ Y) monolayers. We found that the categories of nonmagnetic atoms (X and Y in CrXY) determine whether CrXY is a ferromagnetic metal or a semiconductor. Unexpectedly, the CrBrS monolayer of these CrXY materials is a room temperature ferromagnetic semiconductor with a Curie temperature of 303 K, and it possesses an off-plane magnetic anisotropy energy of 0.06 meV. Besides, a strong Dzyaloshinskii-Moriya interaction (DMI) of 3.10 meV is found in CrTeI and is mainly induced by the strong spin-orbit coupling of the nonmagnetic atoms Te(I) rather than that of the magnetic Cr atoms. Furthermore, using micromagnetic simulations, skyrmions can be stabilized in CrSeBr without external magnetic fields. More importantly, the bimerons in CrSeCl with in-plane magnetic anisotropy can be transformed into skyrmions or a ferromagnetic state by controlling the direction of external magnetic fields. Our work investigates fourteen kinds of Janus monolayers, serving as guidelines for materials research on DMI, skyrmions and bimerons.
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Affiliation(s)
- Zhihao Guan
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018, China.
| | - Zhong Shen
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018, China.
| | - Yufei Xue
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018, China.
| | - Tingting Zhong
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018, China.
| | - Xiaoping Wu
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018, China.
| | - Changsheng Song
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018, China.
- Longgang Institute of Zhejiang Sci-Tech University, Wenzhou, 325802, China
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35
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Liu P, Zhang Y, Li K, Li Y, Pu Y. Recent advances in 2D van der Waals magnets: Detection, modulation, and applications. iScience 2023; 26:107584. [PMID: 37664598 PMCID: PMC10470320 DOI: 10.1016/j.isci.2023.107584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/05/2023] Open
Abstract
The emergence of two-dimensional (2D) van der Waals magnets provides an exciting platform for exploring magnetism in the monolayer limit. Exotic quantum phenomena and significant potential for spintronic applications are demonstrated in 2D magnetic crystals and heterostructures, which offer unprecedented possibilities in advanced formation technology with low power and high efficiency. In this review, we summarize recent advances in 2D van der Waals magnetic crystals. We focus mainly on van der Waals materials of truly 2D nature with intrinsic magnetism. The detection methods of 2D magnetic materials are first introduced in detail. Subsequently, the effective strategies to modulate the magnetic behavior of 2D magnets (e.g., Curie temperature, magnetic anisotropy, magnetic exchange interaction) are presented. Then, we list the applications of 2D magnets in the spintronic devices. We also highlight current challenges and broad space for the development of 2D magnets in further studies.
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Affiliation(s)
- Ping Liu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Ying Zhang
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
| | - Kehan Li
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yongde Li
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yong Pu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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36
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Tang S, Wan D, Bai S, Fu S, Wang X, Li X, Zhang J. Enhancing phonon thermal transport in 2H-CrX 2 (X = S and Se) monolayers through robust bonding interactions. Phys Chem Chem Phys 2023; 25:22401-22414. [PMID: 37581216 DOI: 10.1039/d3cp03420h] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Inspired by the groundbreaking discovery of the 2H-MoS2 monolayer with outstanding physical properties, the electronic structure, structural stability, and thermal transport of 2H-CrX2 (X = S and Se) monolayers are theoretically evaluated using density functional theory (DFT) calculations and semiempirical Boltzmann transport theory. The 2H-CrX2 (X = S and Se) monolayers are direct semiconductors with the bandgaps of 0.91 and 0.69 eV. The elastic modulus and phonon dispersion curve analysis show that the 2H-CrX2 (X = S and Se) monolayers possess excellent mechanical and dynamic stabilities on account of elastic constants satisfying the Born-Huang criterion and the absence of negative frequencies. The thermal stabilities of the 2H-CrX2 (X = S and Se) monolayers at 300 K are proved by ab initio molecular dynamics (AIMD) simulations, as evidenced by the slight changes in the structural evolution and small fluctuation in total energy. High thermal conductivities of 131.7 and 88.6 W m-1 K-1 are discovered for 2H-CrS2 and 2H-CrSe2 monolayers at 300 K. Further analysis of the phonon group velocity, phonon relaxation time, and Grüneisen parameter shows that the high lattice thermal conductivities of 2H-CrX2 (X = S and Se) monolayers could be attributed to the great bond strength, large Young's modulus, relatively small atomic mass, high phonon group velocity, and long phonon relaxation time. In addition, the various scattering mechanisms are further considered in the calculations of phonon thermal transport to evaluate the effect of the scattering rates of the 2H-CrS2 and 2H-CrSe2 monolayers on the lattice thermal conductivity, and the determinative role is found for the phonon boundary scattering. Our present study would not only offer a fundamental understanding of the thermal transport properties of the 2H-CrX2 (X = S and Se) monolayers, but also provide theoretical guidelines for the experimental investigation of thermal management materials with 2H-phase.
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Affiliation(s)
- Shuwei Tang
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
- Faculty of Chemistry, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Da Wan
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Shulin Bai
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Shengkai Fu
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Xinyu Wang
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Xiaodong Li
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Jingyi Zhang
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
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Wang X, Sun S, Wang J, Li S, Zhou J, Aktas O, Xu M, Deringer VL, Mazzarello R, Ma E, Zhang W. Spin Glass Behavior in Amorphous Cr 2 Ge 2 Te 6 Phase-Change Alloy. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302444. [PMID: 37279377 PMCID: PMC10427411 DOI: 10.1002/advs.202302444] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Indexed: 06/08/2023]
Abstract
The layered crystal structure of Cr2 Ge2 Te6 shows ferromagnetic ordering at the two-dimensional limit, which holds promise for spintronic applications. However, external voltage pulses can trigger amorphization of the material in nanoscale electronic devices, and it is unclear whether the loss of structural ordering leads to a change in magnetic properties. Here, it is demonstrated that Cr2 Ge2 Te6 preserves the spin-polarized nature in the amorphous phase, but undergoes a magnetic transition to a spin glass state below 20 K. Quantum-mechanical computations reveal the microscopic origin of this transition in spin configuration: it is due to strong distortions of the CrTeCr bonds, connecting chromium-centered octahedra, and to the overall increase in disorder upon amorphization. The tunable magnetic properties of Cr2 Ge2 Te6 can be exploited for multifunctional, magnetic phase-change devices that switch between crystalline and amorphous states.
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Affiliation(s)
- Xiaozhe Wang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Suyang Sun
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Jiang‐Jing Wang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Shuang Li
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Jian Zhou
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Oktay Aktas
- State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Ming Xu
- Wuhan National Laboratory for OptoelectronicsSchool of Integrated CircuitsHuazhong University of Science and TechnologyWuhan430074China
| | - Volker L. Deringer
- Department of ChemistryInorganic Chemistry LaboratoryUniversity of OxfordOxfordOX1 3QRUK
| | | | - En Ma
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Wei Zhang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
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38
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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39
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Chi H, Ou Y, Eldred TB, Gao W, Kwon S, Murray J, Dreyer M, Butera RE, Foucher AC, Ambaye H, Keum J, Greenberg AT, Liu Y, Neupane MR, de Coster GJ, Vail OA, Taylor PJ, Folkes PA, Rong C, Yin G, Lake RK, Ross FM, Lauter V, Heiman D, Moodera JS. Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride. Nat Commun 2023; 14:3222. [PMID: 37270579 DOI: 10.1038/s41467-023-38995-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 05/24/2023] [Indexed: 06/05/2023] Open
Abstract
Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic layers/domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics.
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Affiliation(s)
- Hang Chi
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
- DEVCOM Army Research Laboratory, Adelphi, MD, 20783, USA.
| | - Yunbo Ou
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
| | - Tim B Eldred
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Wenpei Gao
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Sohee Kwon
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | - Joseph Murray
- Department of Physics, University of Maryland, College Park, MD, 20742, USA
| | - Michael Dreyer
- Department of Physics, University of Maryland, College Park, MD, 20742, USA
| | - Robert E Butera
- Laboratory for Physical Sciences, College Park, MD, 20740, USA
| | - Alexandre C Foucher
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Haile Ambaye
- Neutron Scattering Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Jong Keum
- Neutron Scattering Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Center for Nanophase Materials Sciences, Physical Science Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | | | - Yuhang Liu
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | - Mahesh R Neupane
- DEVCOM Army Research Laboratory, Adelphi, MD, 20783, USA
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | | | - Owen A Vail
- DEVCOM Army Research Laboratory, Adelphi, MD, 20783, USA
| | | | | | - Charles Rong
- DEVCOM Army Research Laboratory, Adelphi, MD, 20783, USA
| | - Gen Yin
- Department of Physics, Georgetown University, Washington, DC, 20057, USA
| | - Roger K Lake
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Valeria Lauter
- Neutron Scattering Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Don Heiman
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Physics, Northeastern University, Boston, MA, 02115, USA
| | - Jagadeesh S Moodera
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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40
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Li L, Gao B, Xu S, Xu Q. Strong Ferromagnetic Manipulation of SrTiO 3 from CO 2 -Straining Effect on Electronic Structure Modulation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300765. [PMID: 36919262 DOI: 10.1002/smll.202300765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Revised: 02/21/2023] [Indexed: 06/15/2023]
Abstract
2D magnetic materials are ideal to fabricate magneto-optical, magneto-electric, and data storage devices, which are proposed to be critical to the next generation of information technologies. Benefited from their labile structures, 2D perovskites are amenable for magnetic manipulation through structural optimization. In this work, 2D room-temperature ferromagnetic SrTiO3 is achieved through straining effect induced by supercritical carbon dioxide (SC CO2 ). According to experimental results, the cubic phase of SrTiO3 is converted to tetragonal with exposure of (110), (200), (111), and (211) planes over the SC CO2 treatment, leading to significant ferromagnetic enhancement. Theoretical calculations illustrate that over the conversion from cubic to tetragonal, the electronic structure of SrTiO3 is significantly modulated. Specifically, the spin density of planes of (200), (111), and (211) is enhanced, presumably due to the stabilization of the highest occupied molecular orbital over straining by SC CO2 , leading to magnetic optimizations. This work suggests that magnetic optimization can be achieved from SC CO2 -induced electronic structure modulation.
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Affiliation(s)
- Lianyu Li
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Bo Gao
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Song Xu
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450003, P. R. China
| | - Qun Xu
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450003, P. R. China
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41
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Wei N, He L, Wu C, Lu D, Li R, Shi H, Lan H, Wen Y, He J, Long Y, Wang X, Zeng M, Fu L. Room-Temperature Magnetism in 2D MnGa 4 -H Induced by Hydrogen Insertion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210828. [PMID: 36896838 DOI: 10.1002/adma.202210828] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Revised: 03/01/2023] [Indexed: 05/19/2023]
Abstract
2D room-temperature magnetic materials are of great importance in future spintronic devices while only very few are reported. Herein, a plasma-enhanced chemical vapor deposition approach is exploited to construct the 2D room-temperature magnetic MnGa4 -H single crystal with a thickness down to 2.2 nm. The employment of H2 plasma makes hydrogen atoms can be easily inserted into the MnGa4 lattice to modulate the atomic distance and charge state, thereby ferrimagnetism can be achieved without destroying the structural configuration. The as-obtained 2D MnGa4 -H crystal is high-quality, air-stable, and thermo-stable, demonstrating robust and stable room-temperature magnetism with a high Curie temperature above 620 K. This work enriches the 2D room-temperature magnetic family and opens up the possibility for the development of spintronic devices based on 2D magnetic alloys.
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Affiliation(s)
- Nan Wei
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Liangcheng He
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Changwei Wu
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou, 516001, P. R. China
| | - Dabiao Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Ruohan Li
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Haiwen Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Haihui Lan
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Youwen Long
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Mengqi Zeng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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42
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Yang Y, Jia L, Wang D, Zhou J. Advanced Strategies in Synthesis of Two-Dimensional Materials with Different Compositions and Phases. SMALL METHODS 2023; 7:e2201585. [PMID: 36739597 DOI: 10.1002/smtd.202201585] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/28/2022] [Indexed: 06/18/2023]
Abstract
In recent years, 2D materials-Ma Xb with different compositions and phases have attracted tremendous attention due to their diverse structures and electronic features. The common thermodynamically stable 2H and metastable 1T phases have been extensively studied, however, there are many unusual compositions and phases with novel physical properties that have yet to be explored. Therefore, summarization of the synthesis strategies, atomic structures, and the unique physical properties of 2D materials with different compositions and phases is very important for their development. In this review, the strategies including chemical vapor deposition, intercalation, atomic layer deposition, chemical vapor transport, and electrostatic gating for synthesizing various 2D materials with different phases and compositions are first summarized. Specially, the intercalation strategies including heterogeneous- and self-intercalation for controllable phases and compositions fabrication are mainly discussed. Then, the novel atomic structures of 2D materials are analyzed, followed by the fascinating physical properties including ferroelectricity, ferromagnetism, superconductivity, and so on. Finally, the conclusion and outlook are offered including the challenges and future prospects of 2D materials with different compositions and phases.
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Affiliation(s)
- Yang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Lin Jia
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dainan Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- MIIT Key Laboratory of Complex-field Intelligent Exploration, Beijing Institute of Technology, Beijing, 100081, China
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43
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Fujisawa Y, Pardo-Almanza M, Hsu CH, Mohamed A, Yamagami K, Krishnadas A, Chang G, Chuang FC, Khoo KH, Zang J, Soumyanarayanan A, Okada Y. Widely Tunable Berry Curvature in the Magnetic Semimetal Cr 1+ δ Te 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207121. [PMID: 36642840 DOI: 10.1002/adma.202207121] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Revised: 11/17/2022] [Indexed: 06/17/2023]
Abstract
Magnetic semimetals have increasingly emerged as lucrative platforms hosting spin-based topological phenomena in real and momentum spaces. Cr1+ δ Te2 is a self-intercalated magnetic transition metal dichalcogenide (TMD), which exhibits topological magnetism and tunable electron filling. While recent studies have explored real-space Berry curvature effects, similar considerations of momentum-space Berry curvature are lacking. Here, the electronic structure and transport properties of epitaxial Cr1+ δ Te2 thin films are systematically investigated over a range of doping, δ (0.33 - 0.71). Spectroscopic experiments reveal the presence of a characteristic semi-metallic band region, which shows a rigid like energy shift with δ. Transport experiments show that the intrinsic component of the anomalous Hall effect (AHE) is sizable and undergoes a sign flip across δ. Finally, density functional theory calculations establish a link between the doping evolution of the band structure and AHE: the AHE sign flip is shown to emerge from the sign change of the Berry curvature, as the semi-metallic band region crosses the Fermi energy. These findings underscore the increasing relevance of momentum-space Berry curvature in magnetic TMDs and provide a unique platform for intertwining topological physics in real and momentum spaces.
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Affiliation(s)
- Yuita Fujisawa
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Markel Pardo-Almanza
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Chia-Hsiu Hsu
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
- Department of Physics, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei, 10617, Taiwan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Atwa Mohamed
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Kohei Yamagami
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Anjana Krishnadas
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Guoqing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei, 10617, Taiwan
- Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan
| | - Khoong Hong Khoo
- Institute of High Performance Computing, Agency for Science Technology and Research, Singapore, 138632, Singapore
| | - Jiadong Zang
- Department of Physics and Astronomy, University of New Hampshire, Durham, NH 03824, USA
- Materials Science Program, University of New Hampshire, Durham, NH 03824, USA
| | - Anjan Soumyanarayanan
- Department of Physics, National University of Singapore, Singapore, 117551, Singapore
- Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore, 138634, Singapore
| | - Yoshinori Okada
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
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44
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Dang N, Kozlenko DP, Lis ON, Kichanov SE, Lukin YV, Golosova NO, Savenko BN, Duong D, Phan T, Tran T, Phan M. High Pressure-Driven Magnetic Disorder and Structural Transformation in Fe 3 GeTe 2 : Emergence of a Magnetic Quantum Critical Point. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206842. [PMID: 36698300 PMCID: PMC10037988 DOI: 10.1002/advs.202206842] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Revised: 01/06/2023] [Indexed: 06/17/2023]
Abstract
Among the recently discovered 2D intrinsic van der Waals (vdW) magnets, Fe3 GeTe2 (FGT) has emerged as a strong candidate for spintronics applications, due to its high Curie temperature (130 - 220 K) and magnetic tunability in response to external stimuli (electrical field, light, strain). Theory predicts that the magnetism of FGT can be significantly modulated by an external strain. However, experimental evidence is needed to validate this prediction and understand the underlying mechanism of strain-mediated vdW magnetism in this system. Here, the effects of pressure (0 - 20 GPa) are elucidated on the magnetic and structural properties of Fe3 GeTe2 by means of synchrotron Mössbauer source spectroscopy, X-ray powder diffraction and Raman spectroscopy over a wide temperature range of 10 - 290 K. A strong suppression of ferromagnetic ordering is observed with increasing pressure, and a paramagnetic ground state emerges when pressure exceeds a critical value, PPM ≈ 15 GPa. The anomalous pressure dependence of structural parameters and vibrational modes is observed at PC ≈ 7 GPa and attributed to an isostructural phase transformation. Density functional theory calculations complement these experimental findings. This study highlights pressure as a driving force for magnetic quantum criticality in layered vdW magnetic systems.
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Affiliation(s)
- Ngoc‐Toan Dang
- Institute of Research and DevelopmentDuy Tan UniversityDa Nang550000Vietnam
- Faculty of Environmental and Natural SciencesDuy Tan UniversityDa Nang550000Vietnam
| | | | - Olga N. Lis
- Frank Laboratory of Neutron PhysicsJINRMoscow Reg.Dubna141980Russia
- Kazan Federal UniversityKazan420008Russia
| | | | | | | | - Boris N. Savenko
- Frank Laboratory of Neutron PhysicsJINRMoscow Reg.Dubna141980Russia
| | - Dinh‐Loc Duong
- Center for Integrated Nanostructure PhysicsInstitute for Basic ScienceSuwon16419Republic of Korea
| | - The‐Long Phan
- Faculty of Engineering Physics and NanotechnologyVNU‐University of Engineering and Technology144 Xuan Thuy, Cau GiayHa Noi100000Vietnam
| | - Tuan‐Anh Tran
- Ho Chi Minh City University of Technology and EducationHo Chi Minh700000Vietnam
| | - Manh‐Huong Phan
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
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45
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Zhao Z, Fang Z, Han X, Yang S, Zhou C, Zeng Y, Zhang B, Li W, Wang Z, Zhang Y, Zhou J, Zhou J, Ye Y, Hou X, Zhao X, Gao S, Hou Y. A general thermodynamics-triggered competitive growth model to guide the synthesis of two-dimensional nonlayered materials. Nat Commun 2023; 14:958. [PMID: 36810290 PMCID: PMC9944324 DOI: 10.1038/s41467-023-36619-5] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/29/2022] [Accepted: 02/08/2023] [Indexed: 02/23/2023] Open
Abstract
Two-dimensional (2D) nonlayered materials have recently provoked a surge of interest due to their abundant species and attractive properties with promising applications in catalysis, nanoelectronics, and spintronics. However, their 2D anisotropic growth still faces considerable challenges and lacks systematic theoretical guidance. Here, we propose a general thermodynamics-triggered competitive growth (TTCG) model providing a multivariate quantitative criterion to predict and guide 2D nonlayered materials growth. Based on this model, we design a universal hydrate-assisted chemical vapor deposition strategy for the controllable synthesis of various 2D nonlayered transition metal oxides. Four unique phases of iron oxides with distinct topological structures have also been selectively grown. More importantly, ultra-thin oxides display high-temperature magnetic ordering and large coercivity. MnxFeyCo3-x-yO4 alloy is also demonstrated to be a promising room-temperature magnetic semiconductor. Our work sheds light on the synthesis of 2D nonlayered materials and promotes their application for room-temperature spintronic devices.
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Affiliation(s)
- Zijing Zhao
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China ,grid.11135.370000 0001 2256 9319Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871 China
| | - Zhi Fang
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Xiaocang Han
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Shiqi Yang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Cong Zhou
- grid.43169.390000 0001 0599 1243Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Yi Zeng
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Biao Zhang
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Wei Li
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Zhan Wang
- grid.9227.e0000000119573309Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
| | - Ying Zhang
- grid.9227.e0000000119573309Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
| | - Jian Zhou
- grid.43169.390000 0001 0599 1243Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Jiadong Zhou
- grid.43555.320000 0000 8841 6246Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing, 100081 China
| | - Yu Ye
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Xinmei Hou
- grid.69775.3a0000 0004 0369 0705Innovation Research Institute for Carbon Neutrality, University of Science and Technology Beijing, Beijing, 100083 China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China.
| | - Song Gao
- grid.79703.3a0000 0004 1764 3838Institute of Spin-X Science and Technology, South China University of Technology, Guangzhou, 510641 China
| | - Yanglong Hou
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China. .,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China.
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46
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Guzman R, Ning S, Zhang R, Liu H, Ma Y, Zhang YY, Bao L, Yang H, Du S, Bosman M, Pennycook SJ, Gao HJ, Zhou W. Collective Magnetic Behavior in Vanadium Telluride Induced by Self-Intercalation. ACS NANO 2023; 17:2450-2459. [PMID: 36716185 DOI: 10.1021/acsnano.2c09762] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Self-intercalation of native magnetic atoms within the van der Waals (vdW) gap of layered two-dimensional (2D) materials provides a degree of freedom to manipulate magnetism in low-dimensional systems. Among various vdW magnets, the vanadium telluride is an interesting system to explore the interlayer order-disorder transition of magnetic impurities due to its flexibility in taking nonstoichiometric compositions. In this work, we combine high-resolution scanning transmission electron microscopy (STEM) analysis with density functional theory (DFT) calculations and magnetometry measurements, to unveil the local atomic structure and magnetic behavior of V-rich V1+xTe2 nanoplates with embedded V3Te4 nanoclusters grown by chemical vapor deposition (CVD). The segregation of V intercalations locally stabilizes the self-intercalated V3Te4 magnetic phase, which possesses a distorted 1T'-like monoclinic structure. This phase transition is controlled by the electron doping from the intercalant V ions. The magnetic hysteresis loops show that the nanoplates exhibit superparamagnetism, while the temperature-dependent magnetization curves evidence a collective superspin-glass magnetic behavior of the nanoclusters at low temperature. Using four-dimensional (4D) STEM diffraction imaging, we reveal the formation of collective diffuse magnetic domain structures within the sample under the high magnetic fields inside the electron microscope. Our results shed light on the studies of dilute magnetism at the 2D limit and on strategies for the manipulation of magnetism for spintronic applications.
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Affiliation(s)
- Roger Guzman
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Shoucong Ning
- Department of Materials Science and Engineering, National University of Singapore, 117575Singapore, Singapore
| | - Ruizi Zhang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Hongtao Liu
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Yinhang Ma
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Yu-Yang Zhang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Haitao Yang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Shixuan Du
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Michel Bosman
- Department of Materials Science and Engineering, National University of Singapore, 117575Singapore, Singapore
| | - Stephen J Pennycook
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Hong-Jun Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
- CAS Centre for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
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47
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Yang H, Wu A, Yi H, Cao W, Yao J, Yang G, Zou YC. Atomic scale insights into the epitaxial growth mechanism of 2D Cr 3Te 4 on mica. NANOSCALE ADVANCES 2023; 5:693-700. [PMID: 36756523 PMCID: PMC9890546 DOI: 10.1039/d2na00835a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Accepted: 12/08/2022] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) magnetic materials are of wide research interest owing to their promising applications in spintronic devices. Among them, chromium chalcogenide compounds are some of the limited available systems that present both high stability in air and high Curie temperatures. Epitaxial growth techniques based on chemical vapour deposition (CVD) have been demonstrated to be a robust method for growing 2D non-layered chromium chalcogenides. However, the growth mechanism is not well-understood. Here, we demonstrate the epitaxial growth of Cr3Te4 nanoplates with high quality on mica. Atomic-resolution scanning transmission electron microscopy (STEM) imaging reveals that the epitaxial growth is based on nanosized chromium oxide seed particles at the interface of Cr3Te4 and mica. The chromium oxide nanoparticle exhibits a coherent interface with both mica and Cr3Te4 with a lattice mismatch within 3%, suggesting that, as a buffer layer, chromium oxide can release the interfacial strain, and induce the growth of Cr3Te4 although there is a distinct oxygen-content difference between mica and Cr3Te4. This work provides an experimental understanding behind the epitaxial growth of 2D magnetic materials at the atomic scale and facilitates the improvement of their growth procedures for devices with high crystalline quality.
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Affiliation(s)
- Hailin Yang
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - An Wu
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Huaxin Yi
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Weiwei Cao
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Jiandong Yao
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Guowei Yang
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Yi-Chao Zou
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
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48
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Pedersen PD, Vegge T, Bligaard T, Hansen HA. Trends in CO 2 Reduction on Transition Metal Dichalcogenide Edges. ACS Catal 2023. [DOI: 10.1021/acscatal.2c04825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Affiliation(s)
- Pernille D. Pedersen
- Department of Energy Conversion and Storage, Technical University of Denmark, Lyngby, 2800, Denmark
| | - Tejs Vegge
- Department of Energy Conversion and Storage, Technical University of Denmark, Lyngby, 2800, Denmark
| | - Thomas Bligaard
- Department of Energy Conversion and Storage, Technical University of Denmark, Lyngby, 2800, Denmark
| | - Heine A. Hansen
- Department of Energy Conversion and Storage, Technical University of Denmark, Lyngby, 2800, Denmark
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49
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Ma C, Chen X, Jin K, Ren W, Zhong Z, Ge C, Guo E, Xu X, Zhang Q, Wang C. The Evolution of Band Topology in Two-Dimensional Weyl Half-Metals. J Phys Chem Lett 2023; 14:825-831. [PMID: 36655858 DOI: 10.1021/acs.jpclett.2c03548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional ferromagnetic Weyl half-metals that are robust against spin-orbital coupling were theoretically proposed recently, in which the nodal points and the nodal loops are protected by specific symmetries. As the symmetry of a ferromagnetic material is highly dependent on the magnetization orientation, here we predict a family of two-dimensional ferromagnetic Weyl half-metals, Mn2X3 (X = S, Se, Te) monolayers, to investigate the band topology under different magnetization orientations in the presence of spin-orbital coupling. The Curie temperatures (∼1000 K) were estimated to be much higher than room temperature due to the strong double exchange interaction and the suppression of spin fluctuation for the two-sublayer structure. Taking a Mn2Te3 monolayer as an example, we demonstrated the evolution of the nodal points and the nodal loops in the presence of spin-orbital coupling via manipulating magnetization orientation. Our work provides a family of high temperature two-dimensional ferromagnetic Weyl half-metals for investigating the nontrivial band topology.
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Affiliation(s)
- Cheng Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
| | - Xuejiao Chen
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
- Songshan Lake Materials Laboratory, Dongguan523808, China
| | - Wenning Ren
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu610225, China
| | - Zhicheng Zhong
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
| | - Erjia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
| | - Xiulai Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing100871, China
| | - Qiulin Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
- Songshan Lake Materials Laboratory, Dongguan523808, China
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50
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Kosaka W, Nemoto H, Nagano K, Kawaguchi S, Sugimoto K, Miyasaka H. Inter-layer magnetic tuning by gas adsorption in π-stacked pillared-layer framework magnets. Chem Sci 2023; 14:791-800. [PMID: 36755721 PMCID: PMC9890543 DOI: 10.1039/d2sc06337a] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Accepted: 12/24/2022] [Indexed: 12/28/2022] Open
Abstract
Magnetism of layered magnets depends on the inter-layer through-space magnetic interactions (J NNNI). Using guest sorption to address inter-layer pores in bulk-layered magnets is an efficient approach to magnetism control because the guest-delicate inter-layer distance (l trans) is a variable parameter for modulating J NNNI. Herein, we demonstrated magnetic changes induced by the adsorption of CO2, N2, and O2 gases in various isostructural layered magnets with a π-stacked pillared-layer framework, , (M = Co, 1, Fe, 2, Cr, 3; Cp* = η5-C5Me5; 2,3,5,6-F4PhCO2 - = 2,3,5,6-tetrafluorobenzoate; TCNQ = 7,7,8,8-tetracyano-p-quinodimethane). Each compound had almost identical adsorption capability for the three types of gases; only CO2 adsorption was found to have a gated profile. A breathing-like structural modulation involving the extension of l trans occurred after the insertion of gases into the isolated pores between the [Ru2]2-TCNQ ferrimagnetic layers, which is more significant for CO2 than for O2 and N2, due to the CO2-gated transition. While adsorbent 1 with M = Co (S = 0) was an antiferromagnet with T N = 75 K, 1⊃CO2 was a ferrimagnet with T C = 76 K, whereas 1⊃N2 and 1⊃O2 were antiferromagnets with T N = 68 K. The guest-insertion effect was similarly confirmed in 2 and 3, and was characteristically dependent on the type of sandwiched spin in as M = Fe (S = 1/2) and Cr (S = 3/2), respectively. This study reveals that common gases such as CO2, O2, and N2 can serve as crucial triggers for the change in magnetism as a function of variable parameter l trans.
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Affiliation(s)
- Wataru Kosaka
- Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku Sendai 980-8577 Japan
- Department of Chemistry, Graduate School of Science, Tohoku University 6-3 Aramaki-Aza-Aoba, Aoba-ku Sendai 980-8578 Japan
| | - Honoka Nemoto
- Department of Chemistry, Graduate School of Science, Tohoku University 6-3 Aramaki-Aza-Aoba, Aoba-ku Sendai 980-8578 Japan
| | - Kohei Nagano
- Department of Chemistry, Graduate School of Science, Tohoku University 6-3 Aramaki-Aza-Aoba, Aoba-ku Sendai 980-8578 Japan
| | - Shogo Kawaguchi
- Diffraction & Scattering Division, Japan Synchrotron Radiation Research Institute 1-1-1 Kouto, Sayo-cho Sayo-gun Hyogo 679-5198 Japan
| | - Kunihisa Sugimoto
- Diffraction & Scattering Division, Japan Synchrotron Radiation Research Institute 1-1-1 Kouto, Sayo-cho Sayo-gun Hyogo 679-5198 Japan
- Department of Chemistry, Kindai University 3-4-1 Kowakae Higashi-Osaka Osaka 577-8502 Japan
| | - Hitoshi Miyasaka
- Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku Sendai 980-8577 Japan
- Department of Chemistry, Graduate School of Science, Tohoku University 6-3 Aramaki-Aza-Aoba, Aoba-ku Sendai 980-8578 Japan
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