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Guo J, Gu S, Lin L, Liu Y, Cai J, Cai H, Tian Y, Zhang Y, Zhang Q, Liu Z, Zhang Y, Zhang X, Lin Y, Huang W, Gu L, Zhang J. Type-printable photodetector arrays for multichannel meta-infrared imaging. Nat Commun 2024; 15:5193. [PMID: 38890366 DOI: 10.1038/s41467-024-49592-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Accepted: 06/12/2024] [Indexed: 06/20/2024] Open
Abstract
Multichannel meta-imaging, inspired by the parallel-processing capability of neuromorphic computing, offers considerable advancements in resolution enhancement and edge discrimination in imaging systems, extending even into the mid- to far-infrared spectrum. Currently typical multichannel infrared imaging systems consist of separating optical gratings or merging multi-cameras, which require complex circuit design and heavy power consumption, hindering the implementation of advanced human-eye-like imagers. Here, we present printable graphene plasmonic photodetector arrays driven by a ferroelectric superdomain for multichannel meta-infrared imaging with enhanced edge discrimination. The fabricated photodetectors exhibited multiple spectral responses with zero-bias operation by directly rescaling the ferroelectric superdomain instead of reconstructing the separated gratings. We also demonstrated enhanced and faster shape classification (98.1%) and edge detection (98.2%) using our multichannel infrared images compared with single-channel detectors. Our proof-of-concept photodetector arrays simplify multichannel infrared imaging systems and offer potential solutions in efficient edge detection in human-brain-type machine vision.
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Affiliation(s)
- Junxiong Guo
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China.
- School of Integrated Circuit Science and Engineering, National Exemplary School of Microelectronics, University of Electronic Science and Technology of China, Chengdu, 610054, China.
| | - Shuyi Gu
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China
| | - Lin Lin
- School of Integrated Circuit Science and Engineering, National Exemplary School of Microelectronics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yu Liu
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.
- College of Integrated Circuit Science and Engineering, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
| | - Ji Cai
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China
| | - Hongyi Cai
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China
| | - Yu Tian
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Yuelin Zhang
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Qinghua Zhang
- Institute of Physics, Chinese Academy of Science, Beijing National Laboratory of Condensed Matter Physics, Beijing, 100190, China
| | - Ze Liu
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China
| | - Yafei Zhang
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China
| | - Xiaosheng Zhang
- School of Integrated Circuit Science and Engineering, National Exemplary School of Microelectronics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yuan Lin
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Wen Huang
- School of Integrated Circuit Science and Engineering, National Exemplary School of Microelectronics, University of Electronic Science and Technology of China, Chengdu, 610054, China.
| | - Lin Gu
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing, 100875, China.
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2
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Castro M, Saéz G, Vergara Apaz P, Allende S, Nunez AS. Toward Fully Multiferroic van der Waals SpinFETs: Basic Design and Quantum Calculations. NANO LETTERS 2024. [PMID: 38889449 DOI: 10.1021/acs.nanolett.4c01146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Manipulating spin transport enhances the functionality of electronic devices, allowing them to surpass physical constraints related to speed and power. For this reason, the use of van der Waals multiferroics at the interface of heterostructures offers promising prospects for developing high-performance devices, enabling the electrical control of spin information. Our work focuses primarily on a mechanism for multiferroicity in two-dimensional van der Waals materials that stems from an interplay between antiferromagnetism and the breaking of inversion symmetry in certain bilayers. We provide evidence for spin-electrical couplings that include manipulating van der Waals multiferroic edges via external voltages and the subsequent control of spin transport including for fully multiferroic spin field-effect transistors.
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Affiliation(s)
- Mario Castro
- Departamento de Física, FCFM, Universidad de Chile, Santiago, 8370448, Chile
- Centro de Nanociencia y Nanotecnología CEDENNA, Santiago, 9170124, Chile
| | - Guidobeth Saéz
- Departamento de Física, FCFM, Universidad de Chile, Santiago, 8370448, Chile
- Centro de Nanociencia y Nanotecnología CEDENNA, Santiago, 9170124, Chile
| | | | - Sebastián Allende
- Centro de Nanociencia y Nanotecnología CEDENNA, Santiago, 9170124, Chile
- Departamento de Física, Universidad de Santiago de Chile, Santiago, 9170124, Chile
| | - Alvaro S Nunez
- Departamento de Física, FCFM, Universidad de Chile, Santiago, 8370448, Chile
- Centro de Nanociencia y Nanotecnología CEDENNA, Santiago, 9170124, Chile
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3
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Clune AJ, Harms NC, Smith KA, Tian W, Liu Z, Musfeldt JL. Pressure-Temperature-Magnetic Field Phase Diagram of Multiferroic (NH 4) 2FeCl 5·H 2O. Inorg Chem 2024; 63:11021-11029. [PMID: 38819699 DOI: 10.1021/acs.inorgchem.4c00403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
Abstract
We combined synchrotron-based infrared absorbance and Raman scattering spectroscopies with diamond anvil cell techniques and a symmetry analysis to explore the properties of multiferroic (NH4)2FeCl5·H2O under extreme pressure-temperature conditions. Compression-induced splitting of the Fe-Cl stretching, Cl-Fe-Cl and Cl-Fe-O bending, and NH4+ librational modes defines two structural phase transitions, and a group-subgroup analysis reveals space group sequences that vary depending upon proximity to the unexpectedly wide order-disorder transition. We bring these findings together with prior high-field work to develop the pressure-temperature-magnetic field phase diagram uncovering competing polar, chiral, and magnetic phases in this system.
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Affiliation(s)
- Amanda J Clune
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Nathan C Harms
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Kevin A Smith
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Wei Tian
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Zhenxian Liu
- Department of Physics, University of Illinois Chicago, Chicago, Illinois 60607-7059, United States
| | - Janice L Musfeldt
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
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4
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Torres Ramírez RG, Trzop E, Collet E. Magnetoelectric and MIESST effects in spin crossover materials exhibiting symmetry-breaking. Dalton Trans 2024; 53:10159-10167. [PMID: 38819197 DOI: 10.1039/d4dt00672k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
Abstract
Giant magnetoelectric coupling and magnetic-field-induced spin state trapping (MIESST) were recently reported in spin crossover materials with polar phases. We discuss these phenomena considering the distinct contributions of the change of the molecular spin state, driven by the magnetic field, and the coupled structural symmetry-breaking during the stepwise change of electric polarisation or MIESST.
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Affiliation(s)
- Ricardo G Torres Ramírez
- Univ Rennes, CNRS, IPR (Institut de Physique de Rennes) - UMR 6251, 35000 Rennes, France.
- CNRS, Univ Rennes, DYNACOM (Dynamical Control of Materials Laboratory) - IRL 2015, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-0033, Japan
| | - Elzbieta Trzop
- Univ Rennes, CNRS, IPR (Institut de Physique de Rennes) - UMR 6251, 35000 Rennes, France.
- CNRS, Univ Rennes, DYNACOM (Dynamical Control of Materials Laboratory) - IRL 2015, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-0033, Japan
| | - Eric Collet
- Univ Rennes, CNRS, IPR (Institut de Physique de Rennes) - UMR 6251, 35000 Rennes, France.
- CNRS, Univ Rennes, DYNACOM (Dynamical Control of Materials Laboratory) - IRL 2015, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-0033, Japan
- Institut universitaire de France (IUF), France
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5
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Colfer L, Bagués N, Noor-A-Alam M, Schmidt M, Nolan M, McComb DW, Keeney L. Tilting and Distortion in the Multiferroic Aurivillius Phase Bi 6Ti 3Fe 1.5Mn 0.5O 18. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:5474-5486. [PMID: 38883432 PMCID: PMC11170937 DOI: 10.1021/acs.chemmater.4c00413] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/14/2024] [Revised: 05/20/2024] [Accepted: 05/23/2024] [Indexed: 06/18/2024]
Abstract
Aurivillius structured Bi6Ti3Fe1.5Mn0.5O18 (B6TFMO) has emerged as a rare room temperature multiferroic, exhibiting reversible magnetoelectric switching of ferroelectric domains under cycled magnetic fields. This layered oxide presents exceptional avenues for advancing data storage technologies owing to its distinctive ferroelectric and ferrimagnetic characteristics. Despite its immense potential, a comprehensive understanding of the underlying mechanisms driving multiferroic behavior remains elusive. Herein, we employ atomic resolution electron microscopy to elucidate the interplay of octahedral tilting and atomic-level structural distortions within B6TFMO, associating these phenomena with functional properties. Fundamental electronic features at varying bonding environments within this complex system are scrutinized using electron energy loss spectroscopy (EELS), revealing that the electronic nature of the Ti4+ cations within perovskite BO6 octahedra is influenced by position within the Aurivillius structure. Layer-by-layer EELS analysis shows an ascending crystal field splitting (Δ) trend from outer to center perovskite layers, with an average increase in Δ of 0.13 ± 0.06 eV. Density functional theory calculations, supported by atomic resolution polarization vector mapping of B-site cations, underscore the correlation between the evolving nature of Ti4+ cations, the extent of tetragonal distortion and ferroelectric behavior. Integrated differential phase contrast imaging unveils the position of light oxygen atoms in B6TFMO for the first time, exposing an escalating degree of octahedral tilting toward the center layers, which competes with the magnitude of BO6 tetragonal distortion. The observed octahedral tilting, influenced by B-site cation arrangement, is deemed crucial for juxtaposing magnetic cations and establishing long-range ferrimagnetic order in multiferroic B6TFMO.
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Affiliation(s)
- Louise Colfer
- Tyndall National Institute, University College Cork, Lee Maltings Complex, Dyke Parade, Cork T12 R5CP, Ireland
| | - Núria Bagués
- Center for Electron Microscopy and Analysis, The Ohio State University, Columbus, Ohio 43212, United States
- Department of Materials Sciences and Engineering, The Ohio State University, Columbus, Ohio 43210, United States
| | - Mohammad Noor-A-Alam
- Tyndall National Institute, University College Cork, Lee Maltings Complex, Dyke Parade, Cork T12 R5CP, Ireland
| | - Michael Schmidt
- Tyndall National Institute, University College Cork, Lee Maltings Complex, Dyke Parade, Cork T12 R5CP, Ireland
| | - Michael Nolan
- Tyndall National Institute, University College Cork, Lee Maltings Complex, Dyke Parade, Cork T12 R5CP, Ireland
| | - David W McComb
- Center for Electron Microscopy and Analysis, The Ohio State University, Columbus, Ohio 43212, United States
- Department of Materials Sciences and Engineering, The Ohio State University, Columbus, Ohio 43210, United States
| | - Lynette Keeney
- Tyndall National Institute, University College Cork, Lee Maltings Complex, Dyke Parade, Cork T12 R5CP, Ireland
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6
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Ogino M, Okamura Y, Fujiwara K, Morimoto T, Nagaosa N, Kaneko Y, Tokura Y, Takahashi Y. Terahertz photon to dc current conversion via magnetic excitations of multiferroics. Nat Commun 2024; 15:4699. [PMID: 38844471 PMCID: PMC11156647 DOI: 10.1038/s41467-024-49056-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2024] [Accepted: 05/23/2024] [Indexed: 06/09/2024] Open
Abstract
Direct conversion from terahertz photon to charge current is a key phenomenon for terahertz photonics. Quantum geometrical description of optical processes in crystalline solids predicts existence of field-unbiased dc photocurrent arising from terahertz-light generation of magnetic excitations in multiferroics, potentially leading to fast and energy-efficient terahertz devices. Here, we demonstrate the dc charge current generation from terahertz magnetic excitations in multiferroic perovskite manganites with spin-driven ferroelectricity, while keeping an insulating state with no free carrier. It is also revealed that electromagnon, which ranges sub-terahertz to 2 THz, as well as antiferromagnetic resonance shows the giant conversion efficiency. Polar asymmetry induced by the cycloidal spin order gives rise to this terahertz-photon-induced dc photocurrent, and no external magnetic and electric bias field are required for this conversion process. The observed phenomena are beyond the conventional photovoltaics in semi-classical regime and demonstrate the essential role of quantum geometrical aspect in low-energy optical processes. Our finding establishes a paradigm of terahertz photovoltaic phenomena, paving a way for terahertz photonic devices and energy harvesting.
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Affiliation(s)
- Makiko Ogino
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan
| | - Yoshihiro Okamura
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan
| | - Kosuke Fujiwara
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan
| | - Takahiro Morimoto
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan
| | - Naoto Nagaosa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Yoshio Kaneko
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Yoshinori Tokura
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Tokyo College, University of Tokyo, Tokyo, Japan
| | - Youtarou Takahashi
- Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, Japan.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
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7
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Davies CS, Kirilyuk A. Epsilon-near-zero regime for ultrafast opto-spintronics. NPJ SPINTRONICS 2024; 2:20. [PMID: 38883427 PMCID: PMC11177794 DOI: 10.1038/s44306-024-00025-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Accepted: 04/11/2024] [Indexed: 06/18/2024]
Abstract
Over the last two decades, breakthrough works in the field of non-linear phononics have revealed that high-frequency lattice vibrations, when driven to high amplitude by mid- to far-infrared optical pulses, can bolster the light-matter interaction and thereby lend control over a variety of spontaneous orderings. This approach fundamentally relies on the resonant excitation of infrared-active transverse optical phonon modes, which are characterized by a maximum in the imaginary part of the medium's permittivity. Here, in this Perspective article, we discuss an alternative strategy where the light pulses are instead tailored to match the frequency at which the real part of the medium's permittivity goes to zero. This so-called epsilon-near-zero regime, popularly studied in the context of metamaterials, naturally emerges to some extent in all dielectric crystals in the infrared spectral range. We find that the light-matter interaction in the phononic epsilon-near-zero regime becomes strongly enhanced, yielding even the possibility of permanently switching both spin and polarization order parameters. We provide our perspective on how this hitherto-neglected yet fertile research area can be explored in future, with the aim to outline and highlight the exciting challenges and opportunities ahead.
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Affiliation(s)
- C S Davies
- FELIX Laboratory, Radboud University, Nijmegen, The Netherlands
- Radboud University, Institute for Molecules and Materials, Nijmegen, The Netherlands
| | - A Kirilyuk
- FELIX Laboratory, Radboud University, Nijmegen, The Netherlands
- Radboud University, Institute for Molecules and Materials, Nijmegen, The Netherlands
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8
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Hu ZB, Yang X, Zhang J, Gui LA, Zhang YF, Liu XD, Zhou ZH, Jiang Y, Zhang Y, Dong S, Song Y. Molecular ferroelectric with low-magnetic-field magnetoelectricity at room temperature. Nat Commun 2024; 15:4702. [PMID: 38830878 PMCID: PMC11148071 DOI: 10.1038/s41467-024-49053-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 05/23/2024] [Indexed: 06/05/2024] Open
Abstract
Magnetoelectric materials, which encompass coupled magnetic and electric polarizabilities within a single phase, hold great promises for magnetic controlled electronic components or electric-field controlled spintronics. However, the realization of ideal magnetoelectric materials remains tough due to the inborn competion between ferroelectricity and magnetism in both levels of symmetry and electronic structure. Herein, we introduce a methodology for constructing single phase paramagnetic ferroelectric molecule [TMCM][FeCl4], which shows low-magnetic-field magnetoelectricity at room temperature. By applying a low magnetic field (≤1 kOe), the halogen Cl‧‧‧Cl distance and the volume of [FeCl4]- anions could be manipulated. This structural change causes a characteristic magnetostriction hysteresis, resulting in a substantial deformation of ~10-4 along the a-axis under an in-plane magnetic field of 2 kOe. The magnetostrictive effect is further qualitatively simulated by density functional theory calculations. Furthermore, this mechanical deformation significantly dampens the ferroelectric polarization by directly influencing the overall dipole configuration. As a result, it induces a remarkable α31 component (~89 mV Oe-1 cm-1) of the magnetoelectric tensor. And the magnetoelectric coupling, characterized by the change of polarization, reaches ~12% under 40 kOe magnetic field. Our results exemplify a design methodology that enables the creation of room-temperature magnetoelectrics by leveraging the potent effects of magnetostriction.
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Affiliation(s)
- Zhao-Bo Hu
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
- Chaotic Matter Science Research Center, Department of Materials, Metallurgy and Chemistry & Jiangxi Provincial Key Laboratory of Functional Molecular Materials Chemistry, Jiangxi University of Science and Technology, Ganzhou, 341000, China
| | - Xinyu Yang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Jinlei Zhang
- Advanced Technology Research Institute of Taihu Photon Center, Suzhou University of Science and Technology, Suzhou, 215009, China.
| | - Ling-Ao Gui
- Chaotic Matter Science Research Center, Department of Materials, Metallurgy and Chemistry & Jiangxi Provincial Key Laboratory of Functional Molecular Materials Chemistry, Jiangxi University of Science and Technology, Ganzhou, 341000, China
| | - Yi-Fan Zhang
- Chaotic Matter Science Research Center, Department of Materials, Metallurgy and Chemistry & Jiangxi Provincial Key Laboratory of Functional Molecular Materials Chemistry, Jiangxi University of Science and Technology, Ganzhou, 341000, China
| | - Xiao-Dong Liu
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
| | - Zi-Han Zhou
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
| | - Yucheng Jiang
- Advanced Technology Research Institute of Taihu Photon Center, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Yi Zhang
- Institute for Science and Applications of Molecular Ferroelectrics, Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, Jinhua, 321004, China.
| | - Shuai Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China.
| | - You Song
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China.
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9
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Huai X, Acheampong E, Delles E, Winiarski MJ, Sorolla M, Nassar L, Liang M, Ramette C, Ji H, Scheie A, Calder S, Mourigal M, Tran TT. Noncentrosymmetric Triangular Magnet CaMnTeO 6: Strong Quantum Fluctuations and Role of s 0 versus s 2 Electronic States in Competing Exchange Interactions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313763. [PMID: 38506567 DOI: 10.1002/adma.202313763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2023] [Revised: 03/12/2024] [Indexed: 03/21/2024]
Abstract
Noncentrosymmetric triangular magnets offer a unique platform for realizing strong quantum fluctuations. However, designing these quantum materials remains an open challenge attributable to a knowledge gap in the tunability of competing exchange interactions at the atomic level. Here, a new noncentrosymmetric triangular S = 3/2 magnet CaMnTeO6 is created based on careful chemical and physical considerations. The model material displays competing magnetic interactions and features nonlinear optical responses with the capability of generating coherent photons. The incommensurate magnetic ground state of CaMnTeO6 with an unusually large spin rotation angle of 127°(1) indicates that the anisotropic interlayer exchange is strong and competing with the isotropic interlayer Heisenberg interaction. The moment of 1.39(1) µB, extracted from low-temperature heat capacity and neutron diffraction measurements, is only 46% of the expected value of the static moment 3 µB. This reduction indicates the presence of strong quantum fluctuations in the half-integer spin S = 3/2 CaMnTeO6 magnet, which is rare. By comparing the spin-polarized band structure, chemical bonding, and physical properties of AMnTeO6 (A = Ca, Sr, Pb), how quantum-chemical interpretation can illuminate insights into the fundamentals of magnetic exchange interactions, providing a powerful tool for modulating spin dynamics with atomically precise control is demonstrated.
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Affiliation(s)
- Xudong Huai
- Department of Chemistry, Clemson University, Clemson, SC, 29634, USA
| | | | - Erich Delles
- Department of Chemistry, Clemson University, Clemson, SC, 29634, USA
| | - Michał J Winiarski
- Applied Physics and Mathematics and Advanced Materials Center, Gdansk University of Technology, Gdansk, 80-233, Poland
| | - Maurice Sorolla
- Institute of Chemistry, University of the Philippines Diliman, Quezon City, 1101, Philippines
| | - Lila Nassar
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Mingli Liang
- Department of Chemistry, University of Houston, Houston, TX, 77204, USA
| | - Caleb Ramette
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Huiwen Ji
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Allen Scheie
- MPA-Q, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Stuart Calder
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Martin Mourigal
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Thao T Tran
- Department of Chemistry, Clemson University, Clemson, SC, 29634, USA
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10
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Zakusylo T, Quintana A, Lenzi V, Silva JPB, Marques L, Yano JLO, Lyu J, Sort J, Sánchez F, Fina I. Robust multiferroicity and magnetic modulation of the ferroelectric imprint field in heterostructures comprising epitaxial Hf 0.5Zr 0.5O 2 and Co. MATERIALS HORIZONS 2024; 11:2388-2396. [PMID: 38441222 PMCID: PMC11104484 DOI: 10.1039/d3mh01966g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Accepted: 02/27/2024] [Indexed: 05/21/2024]
Abstract
Magnetoelectric multiferroics, either single-phase or composites comprising ferroelectric/ferromagnetic coupled films, are promising candidates for energy efficient memory computing. However, most of the multiferroic magnetoelectric systems studied so far are based on materials that are not compatible with industrial processes. Doped hafnia is emerging as one of the few CMOS-compatible ferroelectric materials. Thus, it is highly relevant to study the integration of ferroelectric hafnia into multiferroic systems. In particular, ferroelectricity in hafnia, and the eventual magnetoelectric coupling when ferromagnetic layers are grown atop of it, are very much dependent on quality of interfaces. Since magnetic metals frequently exhibit noticeable reactivity when grown onto oxides, it is expected that ferroelectricity and magnetoelectricity might be reduced in multiferroic hafnia-based structures. In this article, we present excellent ferroelectric endurance and retention in epitaxial Hf0.5Zr0.5O2 films grown on buffered silicon using Co as the top electrode. The crucial influence of a thin Pt capping layer grown on top of Co on the ferroelectric functional characteristics is revealed by contrasting the utilization of Pt-capped Co, non-capped Co and Pt. Magnetic control of the imprint electric field (up to 40% modulation) is achieved in Pt-capped Co/Hf0.5Zr0.5O2 structures, although this does not lead to appreciable tuning of the ferroelectric polarization, as a result of its high stability. Computation of piezoelectric and flexoelectric strain-mediated mechanisms of the observed magnetoelectric coupling reveal that flexoelectric contributions are likely to be at the origin of the large imprint electric field variation.
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Affiliation(s)
- Tetiana Zakusylo
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Alberto Quintana
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Veniero Lenzi
- CICECO - Aveiro Institute of Materials, Department of Chemistry, University of Aveiro, Aveiro 3810-193, Portugal
| | - José P B Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga 4710-057, Portugal
| | - Luís Marques
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga 4710-057, Portugal
| | - José Luís Ortolá Yano
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Jike Lyu
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Jordi Sort
- Departament de Física, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain
- ICREA, Pg. Lluís Companys 23, Barcelona 08010, Spain
| | - Florencio Sánchez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Ignasi Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
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11
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Sun Z, Su Y, Zhi A, Gao Z, Han X, Wu K, Bao L, Huang Y, Shi Y, Bai X, Cheng P, Chen L, Wu K, Tian X, Wu C, Feng B. Evidence for multiferroicity in single-layer CuCrSe 2. Nat Commun 2024; 15:4252. [PMID: 38762594 PMCID: PMC11102510 DOI: 10.1038/s41467-024-48636-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Accepted: 05/09/2024] [Indexed: 05/20/2024] Open
Abstract
Multiferroic materials, which simultaneously exhibit ferroelectricity and magnetism, have attracted substantial attention due to their fascinating physical properties and potential technological applications. With the trends towards device miniaturization, there is an increasing demand for the persistence of multiferroicity in single-layer materials at elevated temperatures. Here, we report high-temperature multiferroicity in single-layer CuCrSe2, which hosts room-temperature ferroelectricity and 120 K ferromagnetism. Notably, the ferromagnetic coupling in single-layer CuCrSe2 is enhanced by the ferroelectricity-induced orbital shift of Cr atoms, which is distinct from both types I and II multiferroicity. These findings are supported by a combination of second-harmonic generation, piezo-response force microscopy, scanning transmission electron microscopy, magnetic, and Hall measurements. Our research provides not only an exemplary platform for delving into intrinsic magnetoelectric interactions at the single-layer limit but also sheds light on potential development of electronic and spintronic devices utilizing two-dimensional multiferroics.
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Affiliation(s)
- Zhenyu Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Chemistry, Brown University, Providence, RI, 02912, USA
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yueqi Su
- School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, 230026, China
- CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Hefei, 230026, China
- Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Hefei, 230026, China
| | - Aomiao Zhi
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhicheng Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Kang Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lihong Bao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Youguo Shi
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xuedong Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Peng Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Xuezeng Tian
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Changzheng Wu
- School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, 230026, China.
- CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Hefei, 230026, China.
- Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Hefei, 230026, China.
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China.
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12
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Tao X, Zhou X, Li R. Advances in the structural engineering of layered bismuth-based semiconductors for visible light-driven photocatalytic water splitting. Chem Commun (Camb) 2024; 60:5136-5148. [PMID: 38656314 DOI: 10.1039/d4cc00455h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Hydrogen production via the photocatalytic water splitting reaction on semiconductors presents a promising avenue to directly achieve solar energy conversion and storage. Bismuth-based semiconductors with layered structures, a hierarchical arrangement of components stacked in the form of two-dimensional extended layers where the atoms within each layer are typically strongly bonded, while the interactions between the layers are relatively weak, have emerged as an important series of photocatalyst candidates. In this review, we focus on the new emerging layered bismuth-based semiconductors with structures in Sillén, Aurivillius, Sillén-Aurivillius and bismuth chromate systems primarily employed in the photocatalytic water splitting reaction. From a crystal structure-oriented view, we delve into discussions on how the component and unit of a crystal structure influence the intrinsic properties, including light absorption and photogenerated charge transfer and separation, of materials as well as the corresponding photocatalytic performance of the water splitting reaction. The strategies for modulating the ferroelectricity and surface modification of these layered bismuth-based semiconductors are also involved. We also discuss the limitations of these materials accompanied by a forward-looking perspective, and we hope to provide some insights from the view of rational material design and engineering for the fabrication of high-efficiency photocatalytic water splitting systems.
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Affiliation(s)
- Xiaoping Tao
- College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing 401331, P. R. China
| | - Xiaoyuan Zhou
- College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing 401331, P. R. China
| | - Rengui Li
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, P. R. China.
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13
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Saini D, Sengupta D, Mondal B, Mishra HK, Ghosh R, Vishwakarma PN, Ram S, Mandal D. A Spin-Charge-Regulated Self-Powered Nanogenerator for Simultaneous Pyro-Magneto-Electric Energy Harvesting. ACS NANO 2024; 18:11964-11977. [PMID: 38656962 DOI: 10.1021/acsnano.4c02406] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
In view of the depletion of natural energy resources, harvesting energy from waste is a revolution to simultaneously capture, unite, and recycle various types of waste energies in flexible devices. Thus, in this work, a spin-charge-regulated pyro-magneto-electric nanogenerator is devised at a well-known ferroelectric P(VDF-TrFE) copolymer. It promptly stores thermal-magnetic energies in a "capacitor" that generates electricity at room temperature. The ferroelectric domains are regulated to slip at the interfaces (also twins) of duly promoting polarization and other properties. An excellent pyroelectric coefficient p ∼ 615 nC·m-2·K-1 is obtained, with duly enhanced stimuli of a thermal sensitivity ∼1.05 V·K-1, a magnetoelectric coefficient αme ∼8.8 mV·cm-1·Oe-1 at 180 Hz (resonance frequency), and a magnetosensitivity ∼473 V/T. It is noteworthy that a strategy of further improving p (up to 41.2 μC·m-2·K-1) and αme (up to 23.6 mV·cm-1·Oe-1) is realized in the electrically poled dipoles. In a model hybrid structure, the spins lead to switch up the electric dipoles parallel at the polymer chains in a cohesive charged layer. It is an innovative approach for efficiently scavenging waste energies from electric vehicles, homes, and industries, where abundant thermal and magnetic energies are accessible. This sustainable strategy could be useful in next-generation self-powered electronics.
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Affiliation(s)
- Dalip Saini
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India
| | - Dipanjan Sengupta
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India
| | - Bidya Mondal
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India
| | - Hari Krishna Mishra
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India
| | - Rubina Ghosh
- Department of Physics and Astronomy, National Institute of Technology, Rourkela 769008, India
| | | | - Shanker Ram
- Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India
| | - Dipankar Mandal
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India
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14
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Amini M, Fumega AO, González-Herrero H, Vaňo V, Kezilebieke S, Lado JL, Liljeroth P. Atomic-Scale Visualization of Multiferroicity in Monolayer NiI 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311342. [PMID: 38241258 DOI: 10.1002/adma.202311342] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2023] [Revised: 01/09/2024] [Indexed: 01/21/2024]
Abstract
Progress in layered van der Waals materials has resulted in the discovery of ferromagnetic and ferroelectric materials down to the monolayer limit. Recently, evidence of the first purely 2D multiferroic material was reported in monolayer NiI2. However, probing multiferroicity with scattering-based and optical bulk techniques is challenging on 2D materials, and experiments on the atomic scale are needed to fully characterize the multiferroic order at the monolayer limit. Here, scanning tunneling microscopy (STM) supported by density functional theory (DFT) calculations is used to probe and characterize the multiferroic order in monolayer NiI2. It is demonstrated that the type-II multiferroic order displayed by NiI2, arising from the combination of a magnetic spin spiral order and a strong spin-orbit coupling, allows probing the multiferroic order in the STM experiments. Moreover, the magnetoelectric coupling of NiI2 is directly probed by external electric field manipulation of the multiferroic domains. The findings establish a novel point of view to analyze magnetoelectric effects at the microscopic level, paving the way toward engineering new multiferroic orders in van der Waals materials and their heterostructures.
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Affiliation(s)
- Mohammad Amini
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
| | - Adolfo O Fumega
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
| | - Héctor González-Herrero
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, E-28049, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid, E-28049, Spain
| | - Viliam Vaňo
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
- Joseph Henry Laboratories and Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Shawulienu Kezilebieke
- Department of Physics, Department of Chemistry and Nanoscience Center, University of Jyväskylä, Jyväskylä, FI-40014, Finland
| | - Jose L Lado
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
| | - Peter Liljeroth
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
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15
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Wang Z, Wang Q, Gong W, Chen A, Islam A, Quan L, Woehl TJ, Yan Q, Ren S. Magnet-in-ferroelectric crystals exhibiting photomultiferroicity. Proc Natl Acad Sci U S A 2024; 121:e2322361121. [PMID: 38625947 PMCID: PMC11046584 DOI: 10.1073/pnas.2322361121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Accepted: 03/18/2024] [Indexed: 04/18/2024] Open
Abstract
Growing crystallographically incommensurate and dissimilar organic materials is fundamentally intriguing but challenging for the prominent cross-correlation phenomenon enabling unique magnetic, electronic, and optical functionalities. Here, we report the growth of molecular layered magnet-in-ferroelectric crystals, demonstrating photomanipulation of interfacial ferroic coupling. The heterocrystals exhibit striking photomagnetization and magnetoelectricity, resulting in photomultiferroic coupling and complete change of their color while inheriting ferroelectricity and magnetism from the parent phases. Under a light illumination, ferromagnetic resonance shifts of 910 Oe are observed in heterocrystals while showing a magnetization change of 0.015 emu/g. In addition, a noticeable magnetization change (8% of magnetization at a 1,000 Oe external field) in the vicinity of ferro-to-paraelectric transition is observed. The mechanistic electric-field-dependent studies suggest the photoinduced ferroelectric field effect responsible for the tailoring of photo-piezo-magnetism. The crystallographic analyses further evidence the lattice coupling of a magnet-in-ferroelectric heterocrystal system.
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Affiliation(s)
- Zhongxuan Wang
- Department of Materials Science and Engineering, University of Maryland, College Park, MD20742
| | - Qian Wang
- Department of Chemistry, Virginia Tech, Blacksburg, VA24060
| | - Weiyi Gong
- Department of Physics, Northeastern University, Boston, MA02115
| | - Amy Chen
- Department of Materials Science and Engineering, University of Maryland, College Park, MD20742
| | - Abdullah Islam
- Department of Materials Science and Engineering, University of Maryland, College Park, MD20742
| | - Lina Quan
- Department of Chemistry, Virginia Tech, Blacksburg, VA24060
- Department of Materials and Science Engineering, Virginia Tech, Blacksburg, VA24060
| | - Taylor J. Woehl
- Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD20742
| | - Qimin Yan
- Department of Physics, Northeastern University, Boston, MA02115
| | - Shenqiang Ren
- Department of Materials Science and Engineering, University of Maryland, College Park, MD20742
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16
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Hu G, Hu J, Wang S, Li R, Yan Y, Luo J. Spin-resolved counting statistics as a sensitive probe of spin correlation in transport through a quantum dot spin valve. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:295301. [PMID: 38604158 DOI: 10.1088/1361-648x/ad3da6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Accepted: 04/11/2024] [Indexed: 04/13/2024]
Abstract
We investigate the noise in spin transport through a single quantum dot (QD) tunnel coupled to ferromagnetic (FM) electrodes with noncollinear magnetizations. Based on a spin-resolved quantum master equation, auto- and cross-correlations of spin-resolved currents are analyzed to reveal the underlying spin transport dynamics and characteristics for various polarizations. We find the currents of majority and minority spins could be strongly autocorrelated despite uncorrelated charge transfer. The interplay between tunnel coupling and the Coulomb interaction gives rise to an exchange magnetic field, leading to the precession of the accumulated spin in the QD. It strongly suppresses the bunching of spin tunneling events and results in a unique double-peak structure in the noise of the net spin current. The spin autocorrelation is found to be susceptible to magnetization alignments, which may serve as a sensitive tool to measure the magnetization directions between the FM electrodes.
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Affiliation(s)
- Guanjian Hu
- Department of Physics, Zhejiang University of Science and Technology, Hangzhou 310023, People's Republic of China
| | - Jing Hu
- Department of Physics, Zhejiang University of Science and Technology, Hangzhou 310023, People's Republic of China
| | - Shikuan Wang
- Department of Physics, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China
| | - RuiQiang Li
- Department of Physics, Zhejiang University of Science and Technology, Hangzhou 310023, People's Republic of China
| | - Yiying Yan
- Department of Physics, Zhejiang University of Science and Technology, Hangzhou 310023, People's Republic of China
| | - JunYan Luo
- Department of Physics, Zhejiang University of Science and Technology, Hangzhou 310023, People's Republic of China
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17
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Zhang J, Shen S, Puggioni D, Wang M, Sha H, Xu X, Lyu Y, Peng H, Xing W, Walters LN, Liu L, Wang Y, Hou D, Xi C, Pi L, Ishizuka H, Kotani Y, Kimata M, Nojiri H, Nakamura T, Liang T, Yi D, Nan T, Zang J, Sheng Z, He Q, Zhou S, Nagaosa N, Nan CW, Tokura Y, Yu R, Rondinelli JM, Yu P. A correlated ferromagnetic polar metal by design. NATURE MATERIALS 2024:10.1038/s41563-024-01856-6. [PMID: 38605196 DOI: 10.1038/s41563-024-01856-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Accepted: 03/11/2024] [Indexed: 04/13/2024]
Abstract
Polar metals have recently garnered increasing interest because of their promising functionalities. Here we report the experimental realization of an intrinsic coexisting ferromagnetism, polar distortion and metallicity in quasi-two-dimensional Ca3Co3O8. This material crystallizes with alternating stacking of oxygen tetrahedral CoO4 monolayers and octahedral CoO6 bilayers. The ferromagnetic metallic state is confined within the quasi-two-dimensional CoO6 layers, and the broken inversion symmetry arises simultaneously from the Co displacements. The breaking of both spatial-inversion and time-reversal symmetries, along with their strong coupling, gives rise to an intrinsic magnetochiral anisotropy with exotic magnetic field-free non-reciprocal electrical resistivity. An extraordinarily robust topological Hall effect persists over a broad temperature-magnetic field phase space, arising from dipole-induced Rashba spin-orbit coupling. Our work not only provides a rich platform to explore the coupling between polarity and magnetism in a metallic system, with extensive potential applications, but also defines a novel design strategy to access exotic correlated electronic states.
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Affiliation(s)
- Jianbing Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Shengchun Shen
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Danilo Puggioni
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Meng Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Haozhi Sha
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China
| | - Xueli Xu
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Yingjie Lyu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Huining Peng
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Wandong Xing
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China
| | - Lauren N Walters
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Linhan Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China
| | - Yujia Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - De Hou
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Chuanying Xi
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Li Pi
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Hiroaki Ishizuka
- Department of Physics, Tokyo Institute of Technology, Tokyo, Japan
| | - Yoshinori Kotani
- Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute, Hyogo, Japan
| | - Motoi Kimata
- Institute of Materials Research, Tohoku University, Sendai, Japan
| | - Hiroyuki Nojiri
- Institute of Materials Research, Tohoku University, Sendai, Japan
| | - Tetsuya Nakamura
- International Center for Synchrotron Radiation Innovation Smart, Tohoku University, Sendai, Japan
| | - Tian Liang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Frontier Science Center for Quantum Information, Beijing, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Tianxiang Nan
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China
| | - Jiadong Zang
- Department of Physics and Astronomy, University of New Hampshire, Durham, NH, USA
| | - Zhigao Sheng
- High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei, China
| | - Qing He
- Department of Physics, Durham University, Durham, UK
| | - Shuyun Zhou
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
- Frontier Science Center for Quantum Information, Beijing, China
| | - Naoto Nagaosa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Applied Physics, University of Tokyo, Tokyo, Japan
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Yoshinori Tokura
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Applied Physics, University of Tokyo, Tokyo, Japan
| | - Rong Yu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China.
- MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing, China.
| | - James M Rondinelli
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
- Frontier Science Center for Quantum Information, Beijing, China.
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18
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Zhang TX, Coughlin AL, Lu CK, Heremans JJ, Zhang SX. Recent progress on topological semimetal IrO 2: electronic structures, synthesis, and transport properties. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:273001. [PMID: 38597335 DOI: 10.1088/1361-648x/ad3603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Accepted: 03/20/2024] [Indexed: 04/11/2024]
Abstract
5dtransition metal oxides, such as iridates, have attracted significant interest in condensed matter physics throughout the past decade owing to their fascinating physical properties that arise from intrinsically strong spin-orbit coupling (SOC) and its interplay with other interactions of comparable energy scales. Among the rich family of iridates, iridium dioxide (IrO2), a simple binary compound long known as a promising catalyst for water splitting, has recently been demonstrated to possess novel topological states and exotic transport properties. The strong SOC and the nonsymmorphic symmetry that IrO2possesses introduce symmetry-protected Dirac nodal lines (DNLs) within its band structure as well as a large spin Hall effect in the transport. Here, we review recent advances pertaining to the study of this unique SOC oxide, with an emphasis on the understanding of the topological electronic structures, syntheses of high crystalline quality nanostructures, and experimental measurements of its fundamental transport properties. In particular, the theoretical origin of the presence of the fourfold degenerate DNLs in band structure and its implications in the angle-resolved photoemission spectroscopy measurement and in the spin Hall effect are discussed. We further introduce a variety of synthesis techniques to achieve IrO2nanostructures, such as epitaxial thin films and single crystalline nanowires, with the goal of understanding the roles that each key parameter plays in the growth process. Finally, we review the electrical, spin, and thermal transport studies. The transport properties under variable temperatures and magnetic fields reveal themselves to be uniquely sensitive and modifiable by strain, dimensionality (bulk, thin film, nanowire), quantum confinement, film texture, and disorder. The sensitivity, stemming from the competing energy scales of SOC, disorder, and other interactions, enables the creation of a variety of intriguing quantum states of matter.
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Affiliation(s)
- T X Zhang
- Department of Physics, Indiana University, Bloomington, IN 47405, United States of America
| | - A L Coughlin
- Department of Physics, Indiana University, Bloomington, IN 47405, United States of America
| | - Chi-Ken Lu
- Department of Mathematics and Computer Science, Rutgers University, Newark, NJ 07102, United States of America
| | - J J Heremans
- Department of Physics, Virginia Tech, Blacksburg, VA 24061, United States of America
| | - S X Zhang
- Department of Physics, Indiana University, Bloomington, IN 47405, United States of America
- Quantum Science and Engineering Center, Indiana University, Bloomington, IN 47405, United States of America
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19
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Ozawa K, Nagase Y, Katsumata M, Shigematsu K, Azuma M. Single or Vortex Ferroelectric and Ferromagnetic Domain Nanodot Array of Magnetoelectric BiFe 0.9Co 0.1O 3. ACS APPLIED MATERIALS & INTERFACES 2024; 16. [PMID: 38592731 PMCID: PMC11056924 DOI: 10.1021/acsami.4c01232] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Revised: 03/18/2024] [Accepted: 03/28/2024] [Indexed: 04/10/2024]
Abstract
Nanodots composed of multiferroic cobalt-substituted BiFeO3, a ferroelectric ferromagnet at room temperature, are fabricated by pulsed laser deposition using anodized porous alumina as masks. The obtained nanodots are approximately 60 nm in diameter, more than 10 nm in thickness, and approximately 70 Gbit/in.2 in density. Piezoresponse and magnetic force microscopies show both ferroelectricity and ferromagnetism with a single-domain nature. It is also found that the dot with 190 nm diameter had multidomain vortex ferroelectric and magnetic structures indicating the strong magnetoelectric coupling. The single-domain cobalt-substituted BiFeO3 nanodots are suitable for verifying magnetization reversal by the electric field, which is the first step in the development of low-power-consumption nonvolatile magnetic memory devices.
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Affiliation(s)
- Keita Ozawa
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8501, Japan
| | - Yasuhito Nagase
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8501, Japan
| | - Marin Katsumata
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8501, Japan
| | - Kei Shigematsu
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8501, Japan
- Kanagawa
Institute of Industrial Science and Technology (KISTEC), Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
- Sumitomo
Chemical Next-Generation Eco-Friendly Devices Collaborative Research
Cluster, Tokyo Institute of Technology, Yokohama 226-8501, Japan
| | - Masaki Azuma
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8501, Japan
- Kanagawa
Institute of Industrial Science and Technology (KISTEC), Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
- Sumitomo
Chemical Next-Generation Eco-Friendly Devices Collaborative Research
Cluster, Tokyo Institute of Technology, Yokohama 226-8501, Japan
- Living
Systems Materialogy (LiSM) Research Group, International Research
Frontiers Initiative (IRFI), Tokyo Institute
of Technology, Yokohama 226-8501, Japan
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20
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Tzschaschel C, Qiu JX, Gao XJ, Li HC, Guo C, Yang HY, Zhang CP, Xie YM, Liu YF, Gao A, Bérubé D, Dinh T, Ho SC, Fang Y, Huang F, Nordlander J, Ma Q, Tafti F, Moll PJW, Law KT, Xu SY. Nonlinear optical diode effect in a magnetic Weyl semimetal. Nat Commun 2024; 15:3017. [PMID: 38589414 DOI: 10.1038/s41467-024-47291-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Accepted: 03/27/2024] [Indexed: 04/10/2024] Open
Abstract
Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light.
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Affiliation(s)
- Christian Tzschaschel
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA.
- Max-Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin, Germany.
| | - Jian-Xiang Qiu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Xue-Jian Gao
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Hou-Chen Li
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Chunyu Guo
- Max Planck Institute for the Structure and Dynamics of Matter, Hamburg, Germany
- Laboratory of Quantum Materials (QMAT), Institute of Materials (IMX), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland
| | - Hung-Yu Yang
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Cheng-Ping Zhang
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Ying-Ming Xie
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Yu-Fei Liu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Anyuan Gao
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Damien Bérubé
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Thao Dinh
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Sheng-Chin Ho
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Yuqiang Fang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering Peking University, Beijing, China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering Peking University, Beijing, China
| | | | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill, MA, USA
- CIFAR Azrieli Global Scholars program, CIFAR, Toronto, Ontario, Canada
| | - Fazel Tafti
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Philip J W Moll
- Max Planck Institute for the Structure and Dynamics of Matter, Hamburg, Germany
- Laboratory of Quantum Materials (QMAT), Institute of Materials (IMX), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland
| | - Kam Tuen Law
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Su-Yang Xu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA.
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21
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Salas OA, Getahun YW, Mandujano HC, Manciu F, Castellanos M, Lopez J, Garza Hernández R, Buturlim VB, Gofryk K, Bairwa D, Elizabeth S, Nair HS. Resilience of the Aurivillius structure upon La and Cr doping in a Bi 5Ti 3FeO 15 multiferroic. Dalton Trans 2024; 53:6423-6435. [PMID: 38506269 DOI: 10.1039/d4dt00159a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/21/2024]
Abstract
Combining the experimental techniques of high-resolution X-ray diffraction, magnetometry, specific heat measurement, and X-ray photoelectron, Raman and dielectric spectroscopy techniques, we have studied the influence of La and Cr doping on the crystal structure and magnetism of the room temperature Aurivillius multiferroic Bi5Ti3FeO15 by investigating the physical properties of (Bi4La)Ti3FeO15 and Bi5Ti3 (Fe0.5Cr0.5)O15. The parent (Bi5Ti3FeO15) and the doped ((Bi4La)Ti3FeO15 and Bi5Ti3(Fe0.5Cr0.5)O15) compounds crystallize in the A21am space group, which is confirmed through our analysis of high-resolution synchrotron X-ray diffraction data obtained on phase-pure polycrystalline powders. We determined the oxidation states of the metal atoms in the studied compounds as Fe3+, Ti4+, Cr3+, and La3+ through the analysis of X-ray photoelectron spectroscopy data. The magnetic susceptibilities of the three compounds are marked by the absence of a long-range ordered ground state, but dominated by superparamagnetic clusters with dominant antiferromagnetic interactions. This signature of short-range magnetism is also seen in specific heat as a low temperature enhancement which is suppressed upon the application of external magnetic fields up to 8 T. Our dielectric spectroscopy experiments showed that the three studied compounds display similar features in the dielectric constant measured as a function of frequency. However, upon doping La at the Bi site, the width of the ferroelectric hysteresis loop increases for (Bi4La)Ti3FeO15 compared to that of the parent compound Bi5Ti3FeO15, and with Cr doping, Bi5Ti3(Fe0.5Cr0.5)O15 becomes a leaky dielectric. The resilience of the Aurivillius crystal structure towards doping of La at the Bi site and Cr at the Fe site is clearly seen in the bulk properties of magnetic susceptibility, specific heat and the average crystal structure. The relevance of changes in the local structure is evident from our Raman spectroscopy and X-ray pair distribution function studies.
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Affiliation(s)
- Omar Alejandro Salas
- Department of Physics, 500 W University Ave, The University of Texas at El Paso, El Paso, TX 79968, USA.
| | - Yohannes W Getahun
- Department of Physics, 500 W University Ave, The University of Texas at El Paso, El Paso, TX 79968, USA.
| | - H Cein Mandujano
- Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland, MD 20742, USA
| | - Felicia Manciu
- Department of Physics, 500 W University Ave, The University of Texas at El Paso, El Paso, TX 79968, USA.
| | - Mariana Castellanos
- Department of Physics, 500 W University Ave, The University of Texas at El Paso, El Paso, TX 79968, USA.
| | - Jorge Lopez
- Department of Physics, 500 W University Ave, The University of Texas at El Paso, El Paso, TX 79968, USA.
| | | | - Volodymir B Buturlim
- Glenn T. Seaborg Institute, Idaho National Laboratory, Idaho Falls, ID 83415, USA
| | - Krzysztof Gofryk
- Center for Quantum Actinide Science and Technology, Idaho National Laboratory, Idaho National Laboratory, Idaho Falls, ID 83415, USA
| | - Dhanpal Bairwa
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Suja Elizabeth
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Harikrishnan S Nair
- Department of Physics, 500 W University Ave, The University of Texas at El Paso, El Paso, TX 79968, USA.
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22
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Zheng H, Loh KP. Ferroics in Hybrid Organic-Inorganic Perovskites: Fundamentals, Design Strategies, and Implementation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308051. [PMID: 37774113 DOI: 10.1002/adma.202308051] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 09/13/2023] [Indexed: 10/01/2023]
Abstract
Hybrid organic-inorganic perovskites (HOIPs) afford highly versatile structure design and lattice dimensionalities; thus, they are actively researched as material platforms for the tailoring of ferroic behaviors. Unlike single-phase organic or inorganic materials, the interlayer coupling between organic and inorganic components in HOIPs allows the modification of strain and symmetry by chirality transfer or lattice distortion, thereby enabling the coexistence of ferroic orders. This review focuses on the principles for engineering one or multiple ferroic orders in HOIPs, and the conditions for achieving multiferroicity and magnetoelectric properties. The prospects of multilevel ferroic modulation, chiral spin textures, and spin orbitronics in HOIPs are also presented.
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Affiliation(s)
- Haining Zheng
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
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23
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Feng Q, Li X, Li X. A Route to Two-Dimensional Room-Temperature Organometallic Multiferroics: The Marriage of d-p Spin Coupling and Structural Inversion Symmetry Breaking. NANO LETTERS 2024; 24:3462-3469. [PMID: 38451166 DOI: 10.1021/acs.nanolett.4c00210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Two-dimensional (2D) room-temperature multiferroic materials are highly desirable but still very limited. Herein, we propose a potential strategy to obtain such materials in 2D metal-organic frameworks (MOFs) by utilizing the d-p direct spin coupling in conjunction with center-symmetry-breaking six-membered heterocyclic rings. Based on this strategy, a screening of 128 2D MOFs results in the identification of three multiferroics, that is, Cr(1,2-oxazine)2, Cr(1,2,4-triazine)2, and Cr(1,2,3,4-trazine)2, simultaneously exhibiting room-temperature ferrimagnetism and ferroelectricity/antiferroelectricity. The room-temperature ferrimagnetic order (306-495 K) in these MOFs originates from the strong d-p direct magnetic exchange interaction between Cr cations and ligand anions. Specifically, Cr(1,2-oxazine)2 exhibits ferroelectric behavior with an out-of-plane polarization of 4.24 pC/m, whereas the other two manifest antiferroelectric characteristics. Notably, all three materials present suitable polarization switching barriers (0.18-0.31 eV). Furthermore, these MOFs are all bipolar magnetic semiconductors with moderate band gaps, in which the spin direction of carriers can be manipulated by electrical gating.
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Affiliation(s)
- Qingqing Feng
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei Institute for Public Safety Research, Tsinghua University, Hefei, Anhui 320601, China
| | - Xiangyang Li
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science (HFIPS), Chinese Academy of Sciences, Hefei, Anhui 230031, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xingxing Li
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
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24
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Wang F, Shen W, Shui Y, Chen J, Wang H, Wang R, Qin Y, Wang X, Wan J, Zhang M, Lu X, Yang T, Song F. Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C 84 single-molecule transistor. Nat Commun 2024; 15:2450. [PMID: 38503743 PMCID: PMC10951203 DOI: 10.1038/s41467-024-46854-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Accepted: 03/12/2024] [Indexed: 03/21/2024] Open
Abstract
Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8μ B to 5.1μ B for the ground-state GN at an electric field strength of 3 - 10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage.
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Affiliation(s)
- Feng Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
- Institute of Atom Manufacturing, Nanjing University, Suzhou, 215163, China
| | - Wangqiang Shen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, China
| | - Yuan Shui
- MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jun Chen
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
- Institute of Atom Manufacturing, Nanjing University, Suzhou, 215163, China
| | - Huaiqiang Wang
- Center for Quantum Transport and Thermal Energy Science, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Rui Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Yuyuan Qin
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Xuefeng Wang
- State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Jianguo Wan
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Minhao Zhang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
- Institute of Atom Manufacturing, Nanjing University, Suzhou, 215163, China.
| | - Xing Lu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Tao Yang
- MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China.
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
- Institute of Atom Manufacturing, Nanjing University, Suzhou, 215163, China.
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25
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Arndt ND, Hershkovitz E, Shah L, Kjærnes K, Yang CY, Balakrishnan PP, Shariff MS, Tauro S, Gopman DB, Kirby BJ, Grutter AJ, Tybell T, Kim H, Need RF. Reduction-Induced Magnetic Behavior in LaFeO 3-δ Thin Films. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1188. [PMID: 38473659 DOI: 10.3390/ma17051188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 02/25/2024] [Accepted: 02/28/2024] [Indexed: 03/14/2024]
Abstract
The effect of oxygen reduction on the magnetic properties of LaFeO3-δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior were observed in nominally identical LFO films grown on substrates prepared using different common methods. In an LFO film grown on as-received SrTiO3 (STO) substrate, the original perovskite film structure was preserved following reduction, and remnant magnetization was only seen at low temperatures. In a LFO film grown on annealed STO, the LFO lost significantly more oxygen and the microstructure decomposed into La- and Fe-rich regions with remnant magnetization that persisted up to room temperature. These results demonstrate an ability to access multiple, distinct magnetic states via oxygen reduction in the same starting material and suggest LFO may be a suitable materials platform for nonvolatile multistate memory.
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Affiliation(s)
- Nathan D Arndt
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Eitan Hershkovitz
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Labdhi Shah
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Kristoffer Kjærnes
- Department of Electronic Systems, NTNU-Norwegian University of Science and Technology, 7491 Trondheim, Norway
| | - Chao-Yao Yang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
| | - Purnima P Balakrishnan
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA
| | - Mohammed S Shariff
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Shaun Tauro
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Daniel B Gopman
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA
| | - Brian J Kirby
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA
| | - Alexander J Grutter
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA
| | - Thomas Tybell
- Department of Electronic Systems, NTNU-Norwegian University of Science and Technology, 7491 Trondheim, Norway
| | - Honggyu Kim
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Ryan F Need
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
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26
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Vaz DC, Lin CC, Plombon JJ, Choi WY, Groen I, Arango IC, Chuvilin A, Hueso LE, Nikonov DE, Li H, Debashis P, Clendenning SB, Gosavi TA, Huang YL, Prasad B, Ramesh R, Vecchiola A, Bibes M, Bouzehouane K, Fusil S, Garcia V, Young IA, Casanova F. Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices. Nat Commun 2024; 15:1902. [PMID: 38429273 PMCID: PMC10907725 DOI: 10.1038/s41467-024-45868-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2023] [Accepted: 02/06/2024] [Indexed: 03/03/2024] Open
Abstract
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO3 and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that, upon the electrical switching of the BiFeO3, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO3. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies.
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Affiliation(s)
- Diogo C Vaz
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain.
| | - Chia-Ching Lin
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - John J Plombon
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Won Young Choi
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain
- VanaM Inc., 21-1 Doshin-ro 4-gil, Yeongdeungpo-gu, Seoul, Republic of Korea
| | - Inge Groen
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain
| | - Isabel C Arango
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Basque Country, Spain
| | | | - Hai Li
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | | | | | - Tanay A Gosavi
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Yen-Lin Huang
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Bhagwati Prasad
- Materials Engineering Department, Indian Institute of Science, Bengaluru, 560012, Karnataka, India
| | - Ramamoorthy Ramesh
- Department of Physics, University of California, Berkeley, CA, 94720, USA
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
| | - Aymeric Vecchiola
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Manuel Bibes
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Karim Bouzehouane
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Stephane Fusil
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Vincent Garcia
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Ian A Young
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain.
- IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Basque Country, Spain.
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27
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Kisiček V, Dominko D, Čulo M, Rapljenović Ž, Kuveždić M, Dragičević M, Berger H, Rocquefelte X, Herak M, Ivek T. Spin-Reorientation-Driven Linear Magnetoelectric Effect in Topological Antiferromagnet Cu_{3}TeO_{6}. PHYSICAL REVIEW LETTERS 2024; 132:096701. [PMID: 38489626 DOI: 10.1103/physrevlett.132.096701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2022] [Revised: 12/11/2023] [Accepted: 01/05/2024] [Indexed: 03/17/2024]
Abstract
The search for new materials for energy-efficient electronic devices has gained unprecedented importance. Among the various classes of magnetic materials driving this search are antiferromagnets, magnetoelectrics, and systems with topological spin excitations. Cu_{3}TeO_{6} is a material that belongs to all three of these classes. Combining static electric polarization and magnetic torque measurements with phenomenological simulations we demonstrate that magnetic-field-induced spin reorientation needs to be taken into account to understand the linear magnetoelectric effect in Cu_{3}TeO_{6}. Our calculations reveal that the magnetic field pushes the system from the nonpolar ground state to the polar magnetic structures. However, nonpolar structures only weakly differing from the obtained polar ones exist due to the weak effect that the field-induced breaking of some symmetries has on the calculated structures. Among those symmetries is the PT (1[over ¯]^{'}) symmetry, preserved for Dirac points found in Cu_{3}TeO_{6}. Our findings establish Cu_{3}TeO_{6} as a promising playground to study the interplay of spintronics-related phenomena.
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Affiliation(s)
- Virna Kisiček
- Institute of Physics, Bijenička cesta 46, 10 000 Zagreb, Croatia
- Faculty of Physics, University of Rijeka, Radmile Matejčić 2, 51 000 Rijeka, Croatia
| | - Damir Dominko
- Institute of Physics, Bijenička cesta 46, 10 000 Zagreb, Croatia
| | - Matija Čulo
- Institute of Physics, Bijenička cesta 46, 10 000 Zagreb, Croatia
| | | | - Marko Kuveždić
- Department of Physics, Faculty of Science, University of Zagreb, Bijenička cesta 32, 10 000 Zagreb, Croatia
| | | | - Helmuth Berger
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Xavier Rocquefelte
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, F-35000 Rennes, France
| | - Mirta Herak
- Institute of Physics, Bijenička cesta 46, 10 000 Zagreb, Croatia
| | - Tomislav Ivek
- Institute of Physics, Bijenička cesta 46, 10 000 Zagreb, Croatia
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28
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Ochoa DA, Menéndez E, López-Sánchez J, Del Campo A, Ma Z, Spasojević I, Fina I, Fernández JF, Rubio-Marcos F, Sort J, García JE. Reversible optical control of magnetism in engineered artificial multiferroics. NANOSCALE 2024; 16:4900-4908. [PMID: 38323494 PMCID: PMC10903401 DOI: 10.1039/d3nr05520e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
Optical means instead of electric fields may offer a new pathway for low-power and wireless control of magnetism, holding great potential to design next-generation memory and spintronic devices. Artificial multiferroic materials have shown remarkable suitability as platforms towards the optical control of magnetic properties. However, the practical use of magnetic modulation should be both stable and reversible and, particularly, it should occur at room temperature. Here we show an unprecedented reversible modulation of magnetism using low-intensity visible-light in Fe75Al25/BaTiO3 heterostructures, at room temperature. This is enabled by the existence of highly oriented charged domain walls arranged in arrays of alternating in-plane and out-of-plane ferroelectric domains with stripe morphology. Light actuation yields a net anisotropic stress caused by ferroelectric domain switching, which leads to a 90-degree reorientation of the magnetic easy axis. Significant changes in the coercivity and squareness ratio of the hysteresis loops can be light-modulated, encouraging the development of novel low energy-consumption wireless magneto-optical devices.
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Affiliation(s)
- Diego A Ochoa
- Departament de Física, Universitat Politècnica de Catalunya, 08034 Barcelona, Spain.
| | - Enric Menéndez
- Departament de Física, Universitat Autónoma de Barcelona, 08193 Bellaterra, Spain.
| | - Jesús López-Sánchez
- Department of Electroceramics, Instituto de Cerámica y Vidrio - CSIC, 28049 Madrid, Spain.
| | - Adolfo Del Campo
- Department of Electroceramics, Instituto de Cerámica y Vidrio - CSIC, 28049 Madrid, Spain.
| | - Zheng Ma
- Departament de Física, Universitat Autónoma de Barcelona, 08193 Bellaterra, Spain.
| | - Irena Spasojević
- Departament de Física, Universitat Autónoma de Barcelona, 08193 Bellaterra, Spain.
| | - Ignasi Fina
- Institut de Ciència de Materials de Barcelona - CSIC, 08193 Bellaterra, Spain
| | - José F Fernández
- Department of Electroceramics, Instituto de Cerámica y Vidrio - CSIC, 28049 Madrid, Spain.
| | - Fernando Rubio-Marcos
- Department of Electroceramics, Instituto de Cerámica y Vidrio - CSIC, 28049 Madrid, Spain.
| | - Jordi Sort
- Departament de Física, Universitat Autónoma de Barcelona, 08193 Bellaterra, Spain.
- Institució Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, Spain
| | - José E García
- Departament de Física, Universitat Politècnica de Catalunya, 08034 Barcelona, Spain.
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29
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Zhan LY, Zhou Y, Li N, Zhang LJ, Xi XJ, Yao ZQ, Zhao JP, Bu XH. A High Working Temperature Multiferroic Induced by Inverse Temperature Symmetry Breaking. J Am Chem Soc 2024; 146:5414-5422. [PMID: 38353405 DOI: 10.1021/jacs.3c12842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/29/2024]
Abstract
Molecular-based multiferroic materials that possess ferroelectric and ferroelastic orders simultaneously have attracted tremendous attention for their potential applications in multiple-state memory devices, molecular switches, and information storage systems. However, it is still a great challenge to effectively construct novel molecular-based multiferroic materials with multifunctionalities. Generally, the structure of these materials possess high symmetry at high temperatures, while processing an obvious order-disorder or displacement-type ferroelastic or ferroelectric phase transition triggered by symmetry breaking during the cooling processes. Therefore, these materials can only function below the Curie temperature (Tc), the low of which is a severe impediment to their practical application. Despite great efforts to elevate Tc, designing single-phase crystalline materials that exhibit multiferroic orders above room temperature remains a challenge. Here, an inverse temperature symmetry-breaking phenomenon was achieved in [FPM][Fe3(μ3-O)(μ-O2CH)8] (FPM stands for 3-(3-formylamino-propyl)-3,4,5,6-tetrahydropyrimidin-1-ium, which acts as the counterions and the rotor component in the network), enabling a ferroelastoelectric phase at a temperature higher than Tc (365 K). Upon heating from room temperature, two-step distinct symmetry breaking with the mm2Fm species leads to the coexistence of ferroelasticity and ferroelectricity in the temperature interval of 365-426 K. In the first step, the FPM cations undergo a conformational flip-induced inverse temperature symmetry breaking; in the second step, a typical ordered-disordered motion-induced symmetry breaking phase transition can be observed, and the abnormal inverse temperature symmetry breaking is unprecedented. Except for the multistep ferroelectric and ferroelastic switching, this complex also exhibits fascinating nonlinear optical switching properties. These discoveries not only signify an important step in designing novel molecular-based multiferroic materials with high working temperatures, but also inspire their multifunctional applications such as multistep switches.
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Affiliation(s)
- Lei-Yu Zhan
- State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China
- School of Materials Science and Engineering, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Nankai University, Tianjin 300350, China
| | - Yu Zhou
- School of Chemistry and Chemical Engineering, Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, Tianjin University of Technology, Tianjin 300384, China
| | - Na Li
- State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China
| | - Lin-Jie Zhang
- School of Chemistry and Chemical Engineering, Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, Tianjin University of Technology, Tianjin 300384, China
| | - Xiao-Juan Xi
- State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China
| | - Zhao-Quan Yao
- School of Chemistry and Chemical Engineering, Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, Tianjin University of Technology, Tianjin 300384, China
| | - Jiong-Peng Zhao
- School of Chemistry and Chemical Engineering, Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, Tianjin University of Technology, Tianjin 300384, China
| | - Xian-He Bu
- State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China
- School of Materials Science and Engineering, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Nankai University, Tianjin 300350, China
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30
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Liu C, Ren W, Picozzi S. Spin-Chirality-Driven Multiferroicity in van der Waals Monolayers. PHYSICAL REVIEW LETTERS 2024; 132:086802. [PMID: 38457717 DOI: 10.1103/physrevlett.132.086802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Accepted: 01/17/2024] [Indexed: 03/10/2024]
Abstract
Driven by the expected contribution of two-dimensional multiferroic systems with strong magnetoelectric coupling to the development of multifunctional nanodevices, here we propose, by means of first-principles calculations, vanadium-halide monolayers as a new class of spin-chirality-driven van der Waals multiferroics. The frustrated 120-deg magnetic structure in the triangular lattice induces a ferroelectric polarization perpendicular to the spin-spiral plane, whose sign is switched by a spin-chirality change. It follows that, in the presence of an applied electric field perpendicular to the monolayers, one magnetic chirality can be stabilized over the other, thereby allowing the long-sought electrical control of spin textures. Moreover, we demonstrate the remarkable role of spin-lattice coupling on magnetoelectricity, which adds to the expected contribution of spin-orbit interaction determined by an anion. Indeed, such compounds exhibit sizeable spin-driven structural distortions, thereby promoting the investigation of multifunctional spin-electric-lattice couplings.
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Affiliation(s)
- Chao Liu
- Institute for Quantum Science and Technology, International Centre of Quantum and Molecular Structures, State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University, Shanghai 200444, China
- Consiglio Nazionale delle Ricerche (CNR-SPIN), Unità di Ricerca presso Terzo di Chieti, c/o Università G. D'Annunzio, I-66100 Chieti, Italy
- Zhejiang Laboratory, Hangzhou 311100, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Wei Ren
- Institute for Quantum Science and Technology, International Centre of Quantum and Molecular Structures, State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University, Shanghai 200444, China
- Zhejiang Laboratory, Hangzhou 311100, China
| | - Silvia Picozzi
- Consiglio Nazionale delle Ricerche (CNR-SPIN), Unità di Ricerca presso Terzo di Chieti, c/o Università G. D'Annunzio, I-66100 Chieti, Italy
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31
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Song L, Zhao Y, Du R, Li H, Li X, Feng W, Yang J, Wen X, Huang L, Peng Y, Sun H, Jiang Y, He J, Shi J. Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr 2S 3/WS 2 Vertical Heterostructures. NANO LETTERS 2024; 24:2408-2414. [PMID: 38329291 DOI: 10.1021/acs.nanolett.3c05105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
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32
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Vakhitov RM, Nizyamova AR, Solonetsky RV. Influence of the magnetic field on the nucleation and properties of 0-degree domain walls in uniaxial films with inhomogeneous magnetoelectric interaction. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:195804. [PMID: 38316061 DOI: 10.1088/1361-648x/ad2672] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Accepted: 02/05/2024] [Indexed: 02/07/2024]
Abstract
This study investigates the behavior of 0°-domain walls arising in uniaxial magnetic films with a flexomagnetoelectric (FME) effect in a magnetic field. It is shown that at certain magnetic field orientations, it is possible to significantly enhance (or weaken) the degree of manifestation of the FME effect in the studied films. In addition, by varying the magnitude and direction of the magnetic field, it is possible to significantly lower (up to zero) the value of the critical electric field at the origin of this inhomogeneity. It is also established that the 0°-domain wall of the non-Neel type, in which induced bound charges do not create a resultant field (field shielding); when a magnetic field is directed perpendicular to the plane of rotation of magnetic moments, a FME effect occurs, which increases with increasing magnitude of the magnetic field.
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Affiliation(s)
- R M Vakhitov
- Ufa University of Science and Technology, 450076 Ufa, Russia
| | - A R Nizyamova
- Ufa University of Science and Technology, 450076 Ufa, Russia
| | - R V Solonetsky
- Ufa University of Science and Technology, 450076 Ufa, Russia
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33
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Safaei Jazi S, Faniayeu I, Cichelero R, Tzarouchis DC, Asgari MM, Dmitriev A, Fan S, Asadchy V. Optical Tellegen metamaterial with spontaneous magnetization. Nat Commun 2024; 15:1293. [PMID: 38346950 PMCID: PMC10861567 DOI: 10.1038/s41467-024-45225-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 01/16/2024] [Indexed: 02/15/2024] Open
Abstract
The nonreciprocal magnetoelectric effect, also known as the Tellegen effect, promises a number of groundbreaking phenomena connected to fundamental (e.g., electrodynamics of axion and relativistic matter) and applied physics (e.g., magnetless isolators). We propose a three-dimensional metamaterial with an isotropic and resonant Tellegen response in the visible frequency range. The metamaterial is formed by randomly oriented bi-material nanocylinders in a host medium. Each nanocylinder consists of a ferromagnet in a single-domain magnetic state and a high-permittivity dielectric operating near the magnetic Mie-type resonance. The proposed metamaterial requires no external magnetic bias and operates on the spontaneous magnetization of the nanocylinders. By leveraging the emerging magnetic Weyl semimetals, we further show how a giant bulk effective magnetoelectric effect can be achieved in a proposed metamaterial, exceeding that of natural materials by almost four orders of magnitude.
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Affiliation(s)
- Shadi Safaei Jazi
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 15500, FI-00076, Aalto, Finland
| | - Ihar Faniayeu
- Department of Physics, University of Gothenburg, Gothenburg, 41296, Sweden
| | - Rafael Cichelero
- Department of Physics, University of Gothenburg, Gothenburg, 41296, Sweden
| | - Dimitrios C Tzarouchis
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
- Meta Materials Europe, Marousi, 15123, Athens, Greece
| | - Mohammad Mahdi Asgari
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 15500, FI-00076, Aalto, Finland
| | - Alexandre Dmitriev
- Department of Physics, University of Gothenburg, Gothenburg, 41296, Sweden
| | - Shanhui Fan
- Ginzton Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Viktar Asadchy
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 15500, FI-00076, Aalto, Finland.
- Ginzton Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
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34
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Yang Y, Zhao L, Yi D, Xu T, Chai Y, Zhang C, Jiang D, Ji Y, Hou D, Jiang W, Tang J, Yu P, Wu H, Nan T. Acoustic-driven magnetic skyrmion motion. Nat Commun 2024; 15:1018. [PMID: 38310112 PMCID: PMC10838300 DOI: 10.1038/s41467-024-45316-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Accepted: 01/19/2024] [Indexed: 02/05/2024] Open
Abstract
Magnetic skyrmions have great potential for developing novel spintronic devices. The electrical manipulation of skyrmions has mainly relied on current-induced spin-orbit torques. Recently, it was suggested that the skyrmions could be more efficiently manipulated by surface acoustic waves (SAWs), an elastic wave that can couple with magnetic moment via the magnetoelastic effect. Here, by designing on-chip piezoelectric transducers that produce propagating SAW pulses, we experimentally demonstrate the directional motion of Néel-type skyrmions in Ta/CoFeB/MgO/Ta multilayers. We find that the shear horizontal wave effectively drives the motion of skyrmions, whereas the elastic wave with longitudinal and shear vertical displacements (Rayleigh wave) cannot produce the motion of skyrmions. A longitudinal motion along the SAW propagation direction and a transverse motion due to topological charge are simultaneously observed and further confirmed by our micromagnetic simulations. This work demonstrates that acoustic waves could be another promising approach for manipulating skyrmions, which could offer new opportunities for ultra-low power skyrmionics.
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Affiliation(s)
- Yang Yang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Le Zhao
- Department of Physics, Tsinghua University, Beijing, China
| | - Di Yi
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Teng Xu
- Department of Physics, Tsinghua University, Beijing, China
| | - Yahong Chai
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Chenye Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Dingsong Jiang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Yahui Ji
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Dazhi Hou
- ICQD, Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui, China
- Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
| | - Wanjun Jiang
- Department of Physics, Tsinghua University, Beijing, China.
| | - Jianshi Tang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Pu Yu
- Department of Physics, Tsinghua University, Beijing, China
| | - Huaqiang Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Tianxiang Nan
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.
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35
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Gao B, Xu S, Xu Q. CO 2 -Induced Spin-Lattice Coupling for Strong Magnetoelectric Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2303692. [PMID: 37975158 PMCID: PMC10837372 DOI: 10.1002/advs.202303692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2023] [Revised: 10/12/2023] [Indexed: 11/19/2023]
Abstract
The preparation of 2D magnetoelectric (ME) nanomaterials with strong ME coupling is crucial for the fast reading and writing processes in the next generation of storage devices. Herein, 2D BaTiO3 (BTO)-CoFe2 O4 (CFO) ME nanocomposites are prepared through a substrate-free coupling strategy using supercritical CO2 . Such 2D BTO-CFO with strong coupling is built through alternating in-plane and out-of-plane epitaxy stacking, leading to remarkable mutual biaxial strain effects for spin-lattice coupling. As a results, such strain effect significantly enhances the ferroelectricity of BTO and the ferrimagnetism of CFO, where an unexceptionally high ME coupling coefficient of (325.8 mV cm-1 Oe-1 ) is obtained for the BTO-CFO nanocomposites.
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Affiliation(s)
- Bo Gao
- College of Materials Science & Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Song Xu
- Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Qun Xu
- College of Materials Science & Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
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36
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Song L, Zhao Y, Xu B, Du R, Li H, Feng W, Yang J, Li X, Liu Z, Wen X, Peng Y, Wang Y, Sun H, Huang L, Jiang Y, Cai Y, Jiang X, Shi J, He J. Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide. Nat Commun 2024; 15:721. [PMID: 38267426 PMCID: PMC10808545 DOI: 10.1038/s41467-024-44929-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 01/11/2024] [Indexed: 01/26/2024] Open
Abstract
Multiferroic materials offer a promising avenue for manipulating digital information by leveraging the cross-coupling between ferroelectric and ferromagnetic orders. Despite the ferroelectricity has been uncovered by ion displacement or interlayer-sliding, one-unit-cell of multiferroic materials design and wafer-scale synthesis have yet to be realized. Here we develope an interface modulated strategy to grow 1-inch one-unit-cell of non-layered chromium sulfide with unidirectional orientation on industry-compatible c-plane sapphire. The interfacial interaction between chromium sulfide and substrate induces the intralayer-sliding of self-intercalated chromium atoms and breaks the space reversal symmetry. As a result, robust room-temperature ferroelectricity (retaining more than one month) emerges in one-unit-cell of chromium sulfide with ultrahigh remanent polarization. Besides, long-range ferromagnetic order is discovered with the Curie temperature approaching 200 K, almost two times higher than that of bulk counterpart. In parallel, the magnetoelectric coupling is certified and which makes 1-inch one-unit-cell of chromium sulfide the largest and thinnest multiferroics.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian, 116024, China
| | - Bingqian Xu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Zijia Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yao Cai
- The Institute of Technological Sciences, Wuhan University, 430072, Wuhan, China
| | - Xue Jiang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian, 116024, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China.
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
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37
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Tang A, Li C, Xu T, Dong Y, Ma J, Yu P, Nan CW, Lin YH, Nan T, Jiang W, Yi D. Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures. NANO LETTERS 2024; 24:632-639. [PMID: 38175932 DOI: 10.1021/acs.nanolett.3c03704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
Electrical control of magnetism is highly desirable for energy-efficient spintronic applications. Realizing electric-field-driven perpendicular magnetization switching has been a long-standing goal, which, however, remains a major challenge. Here, electric-field control of perpendicularly magnetized ferrimagnetic order via strain-mediated magnetoelectric coupling is reported. We show that the gate voltages isothermally toggle the dominant magnetic sublattice of the compensated ferrimagnet FeTb at room temperature, showing high reversibility and good endurance under ambient conditions. By implementing this strategy in FeTb/Pt/Co spin valves with giant magnetoresistance (GMR), we demonstrate that the distinct high and low resistance states can be selectively controlled by the gate voltages with assisting magnetic fields. Our results provide a promising route to use ferrimagnets for developing electric-field-controlled, low-power memory and logic devices.
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Affiliation(s)
- Aihua Tang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Chao Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Teng Xu
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Yiqing Dong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Jing Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Pu Yu
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yuan-Hua Lin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Tianxiang Nan
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Wanjun Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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38
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Yanagisawa J, Aoyama T, Fujii K, Yashima M, Inaguma Y, Kuwabara A, Shitara K, Le Ouay B, Hayami S, Ohba M, Ohtani R. Strongly Enhanced Polarization in a Ferroelectric Crystal by Conduction-Proton Flow. J Am Chem Soc 2024; 146:1476-1483. [PMID: 38166110 DOI: 10.1021/jacs.3c10841] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Ion conductors comprising noncentrosymmetric frameworks have emerged as new functional materials. However, strongly correlated polarity functionality and ion transport have not been achieved. Herein, we report a ferroelectric proton conductor, K2MnN(CN)4·H2O (1·H2O), exhibiting the strong correlation between its polar skeleton and conductive ions that generate anomalous ferroelectricity via the proton-bias phenomenon. The application of an electric field of ±1 kV/cm (0.1 Hz) on 1·H2O at 298 K produced the ferroelectricity (polarization = 1.5 × 104 μC/cm2), which was enhanced by the ferroelectric-skeleton-trapped conductive protons. Furthermore, the strong polarity-proton transport coupling of 1·H2O induced a proton-rectification-like directional ion-conductive behavior that could be adjusted by the magnitude and direction of DC electric fields. Moreover, 1·H2O exhibited reversible polarity switching between the polar 1·H2O and its dehydrated form, 1, with a centrosymmetric structure comprising an order-disorder-type transition of the nitrido-bridged chains.
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Affiliation(s)
- Junichi Yanagisawa
- Department of Chemistry, Faculty of Science, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Takuya Aoyama
- Department of Physics, Graduate School of Science, Tohoku University, Sendai, Miyagi 980-8578, Japan
| | - Kotaro Fujii
- Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1 W4-17 O-okayama, Meguro-ku, Tokyo 152-8551, Japan
| | - Masatomo Yashima
- Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1 W4-17 O-okayama, Meguro-ku, Tokyo 152-8551, Japan
| | - Yoshiyuki Inaguma
- Department of Chemistry, Faculty of Science, Gakushuin University, 1-5-1 Mejiro, Toshima-ku, Tokyo 171-8588, Japan
| | - Akihide Kuwabara
- Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
| | - Kazuki Shitara
- Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
| | - Benjamin Le Ouay
- Department of Chemistry, Faculty of Science, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Shinya Hayami
- Department of Chemistry, Graduate School of Science and Technology, Kumamoto University, 2-39-1, Kurokami, Chuo-ku, Kumamoto 860-8555, Japan
| | - Masaaki Ohba
- Department of Chemistry, Faculty of Science, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Ryo Ohtani
- Department of Chemistry, Faculty of Science, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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39
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Xu T, Mori M, Hirakata H, Kitamura T, Shimada T. Emergent ultrasmall multiferroics in paraelectric perovskite oxide by hole polarons. Phys Chem Chem Phys 2024; 26:842-847. [PMID: 38108227 DOI: 10.1039/d3cp05364d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2023]
Abstract
Ultimately small multiferroics with coupled ferroelectric and ferromagnetic order parameters have drawn considerable attention for their tremendous technological potential. Nevertheless, these ferroic orders inevitably disappear below the critical size of several nanometers in conventional ferroelectrics or multiferroics. Here, based on first-principles calculations, we propose a new strategy to overcome this limitation and create ultrasmall multiferroic elements in otherwise nonferroelectric CaTiO3 by engineering the interplay of oxygen octahedral rotations and hole polarons, though both of them are generally believed to be detrimental to ferroelectricity. It is found that the hole doped in CaTiO3 spontaneously forms a localized polaronic state. The lattice distortions associated with a hole polaron interacting with the intrinsic oxygen octahedral rotations in CaTiO3 effectively break the inversion symmetry and create atomic-scale ferroelectricity beyond the critical size limitation. The hole polaron also causes highly localized magnetism attributed to the associated spin-polarized electric state and thus manifests as a multiferroic polaron. Moreover, the hole polaron exhibits high hopping mobility accompanied by rich switching of polarization and magnetic directions, indicating strong magnetoelectric coupling with a mechanism dissimilar from that of conventional multiferroics. The present work provides a new mechanism to engineer inversion symmetry and opens avenues for designing unusual multifunctional materials.
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Affiliation(s)
- Tao Xu
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan.
| | - Masataka Mori
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan.
| | - Hiroyuki Hirakata
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan.
| | - Takayuki Kitamura
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan.
| | - Takahiro Shimada
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan.
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40
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Bichurin M, Sokolov O, Ivanov S, Leontiev V, Lobekin V, Semenov G, Wang Y. Modeling the Converse Magnetoelectric Effect in the Low-Frequency Range. SENSORS (BASEL, SWITZERLAND) 2023; 24:151. [PMID: 38203014 PMCID: PMC10781216 DOI: 10.3390/s24010151] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Revised: 12/18/2023] [Accepted: 12/25/2023] [Indexed: 01/12/2024]
Abstract
This article is devoted to the theory of the converse magnetoelectric (CME) effect for the longitudinal, bending, longitudinal-shear, and torsional resonance modes and its quasi-static regime. In contrast to the direct ME effect (DME), these issues have not been studied in sufficient detail in the literature. However, in a number of cases, in particular in the study of low-frequency ME antennas, the results obtained are of interest. Detailed calculations with examples were carried out for the longitudinal mode on the symmetric and asymmetric structures based on Metglas/PZT (LN); the bending mode was considered for the asymmetric free structure and structure with rigidly fixed left-end Metglas/PZT (LN); the longitudinal-shear and torsional modes were investigated for the symmetric and asymmetric free structures based on Metglas/GaAs. For the identification of the torsion mode, it was suggested to perform an experiment on the ME structure based on Metglas/bimorphic LN. All calculation results are presented in the form of graphs for the CME coefficients.
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Affiliation(s)
- Mirza Bichurin
- Yaroslav-the-Wise Novgorod State University, 173003 Velikiy Novgorod, Russia; (O.S.); (S.I.); (V.L.); (V.L.); (G.S.)
| | - Oleg Sokolov
- Yaroslav-the-Wise Novgorod State University, 173003 Velikiy Novgorod, Russia; (O.S.); (S.I.); (V.L.); (V.L.); (G.S.)
| | - Sergey Ivanov
- Yaroslav-the-Wise Novgorod State University, 173003 Velikiy Novgorod, Russia; (O.S.); (S.I.); (V.L.); (V.L.); (G.S.)
| | - Viktor Leontiev
- Yaroslav-the-Wise Novgorod State University, 173003 Velikiy Novgorod, Russia; (O.S.); (S.I.); (V.L.); (V.L.); (G.S.)
| | - Vyacheslav Lobekin
- Yaroslav-the-Wise Novgorod State University, 173003 Velikiy Novgorod, Russia; (O.S.); (S.I.); (V.L.); (V.L.); (G.S.)
| | - Gennady Semenov
- Yaroslav-the-Wise Novgorod State University, 173003 Velikiy Novgorod, Russia; (O.S.); (S.I.); (V.L.); (V.L.); (G.S.)
| | - Yaojin Wang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
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41
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Li T, Deng S, Qi H, Zhu T, Chen Y, Wang H, Zhu F, Liu H, Wang J, Guo EJ, Diéguez O, Chen J. High-Temperature Ferroic Glassy States in SrTiO_{3}-Based Thin Films. PHYSICAL REVIEW LETTERS 2023; 131:246801. [PMID: 38181148 DOI: 10.1103/physrevlett.131.246801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Revised: 08/19/2023] [Accepted: 10/24/2023] [Indexed: 01/07/2024]
Abstract
Disordered ferroics hold great promise for next-generation magnetoelectric devices because their lack of symmetry constraints implies negligible hysteresis with low energy costs. However, the transition temperature and the magnitude of polarization and magnetization are still too low to meet application requirements. Here, taking the prototype perovskite of SrTiO_{3} as an instance, we realize a coexisting spin and dipole reentrant glass states in SrTiO_{3} homoepitaxial films via manipulation of local symmetry. Room-temperature saturation magnetization and spontaneous polarization reach ∼ 10 emu/cm^{3} and ∼ 25 μC/cm^{2}, respectively, with high transition temperatures (101 K and 236 K for spin and dipole glass temperatures and 556 K and 1100 K for Curie temperatures, respectively). Our atomic-scale investigation points out an underlying mechanism, where the Ti/O-defective unit cells break the local translational and orbital symmetry to drive the formation of unusual slush states. This study advances our understanding of the nature of the intricate couplings of ferroic glasses. Our approach could be applied to numerous perovskite oxides for the simultaneous control of the local magnetic and polar orderings and for the exploration of the underlying physics.
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Affiliation(s)
- Tianyu Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - He Qi
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Tao Zhu
- Spallation Neutron Source Science Center, Dongguan 523803, China
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Chen
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Huanhua Wang
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Fangyuan Zhu
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jiaou Wang
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Er-Jia Guo
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Oswaldo Diéguez
- Department of Materials Science and Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Jun Chen
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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42
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Saha S, Acharya S, Popov M, Sauyet T, Pfund J, Bidthanapally R, Jain M, Page MR, Srinivasan G. A Novel Spinel Ferrite-Hexagonal Ferrite Composite for Enhanced Magneto-Electric Coupling in a Bilayer with PZT. SENSORS (BASEL, SWITZERLAND) 2023; 23:9815. [PMID: 38139661 PMCID: PMC10748018 DOI: 10.3390/s23249815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Revised: 12/06/2023] [Accepted: 12/11/2023] [Indexed: 12/24/2023]
Abstract
The magnetoelectric effect (ME) is an important strain mediated-phenomenon in a ferromagnetic-piezoelectric composite for a variety of sensors and signal processing devices. A bias magnetic field, in general, is essential to realize a strong ME coupling in most composites. Magnetic phases with (i) high magnetostriction for strong piezomagnetic coupling and (ii) large anisotropy field that acts as a built-in bias field are preferred so that miniature, ME composite-based devices can operate without the need for an external magnetic field. We are able to realize such a magnetic phase with a composite of (i) barium hexaferrite (BaM) with high magnetocrystalline anisotropy field and (ii) nickel ferrite (NFO) with high magnetostriction. The BNx composites, with (100 - x) wt.% of BaM and x wt.% NFO, for x = 0-100, were prepared. X-ray diffraction analysis shows that the composites did not contain any impurity phases. Scanning electron microscopy images revealed that, with an increase in NFO content, hexagonal BaM grains become prominent, leading to a large anisotropy field. The room temperature saturation magnetization showed a general increase with increasing BaM content in the composites. NFO rich composites with x ≥ 60 were found to have a large magnetostriction value of around -23 ppm, comparable to pure NFO. The anisotropy field HA of the composites, determined from magnetization and ferromagnetic resonance (FMR) measurements, increased with increasing NFO content and reached a maximum of 7.77 kOe for x = 75. The BNx composite was cut into rectangular platelets and bonded with PZT to form the bilayers. ME voltage coefficient (MEVC) measurements at low frequencies and at mechanical resonance showed strong coupling at zero bias for samples with x ≥ 33. This large in-plane HA acted as a built-in field for strong ME effects under zero external bias in the bilayers. The highest zero-bias MEVC of ~22 mV/cm Oe was obtained for BN75-PZT bilayers wherein BN75 also has the highest HA. The Bilayer of BN95-PZT showed a maximum MEVC ~992 mV/cm Oe at electromechanical resonance at 59 kHz. The use of hexaferrite-spinel ferrite composite to achieve strong zero-bias ME coupling in bilayers with PZT is significant for applications related to energy harvesting, sensors, and high frequency devices.
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Affiliation(s)
- Sujoy Saha
- Department of Physics, Oakland University, Rochester, MI 48309, USA; (S.S.); (S.A.); (M.P.); (R.B.)
| | - Sabita Acharya
- Department of Physics, Oakland University, Rochester, MI 48309, USA; (S.S.); (S.A.); (M.P.); (R.B.)
| | - Maksym Popov
- Department of Physics, Oakland University, Rochester, MI 48309, USA; (S.S.); (S.A.); (M.P.); (R.B.)
- Institute of High Technologies, Taras Shevchenko National University of Kyiv, 01601 Kyiv, Ukraine
| | - Theodore Sauyet
- Department of Physics, University of Connecticut, Storrs, CT 06269, USA; (T.S.); (J.P.); (M.J.)
| | - Jacob Pfund
- Department of Physics, University of Connecticut, Storrs, CT 06269, USA; (T.S.); (J.P.); (M.J.)
| | - Rao Bidthanapally
- Department of Physics, Oakland University, Rochester, MI 48309, USA; (S.S.); (S.A.); (M.P.); (R.B.)
| | - Menka Jain
- Department of Physics, University of Connecticut, Storrs, CT 06269, USA; (T.S.); (J.P.); (M.J.)
| | - Michael R. Page
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH 45433, USA;
| | - Gopalan Srinivasan
- Department of Physics, Oakland University, Rochester, MI 48309, USA; (S.S.); (S.A.); (M.P.); (R.B.)
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43
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Wang Z, Dong S. Alterferroicity with seesaw-type magnetoelectricity. Proc Natl Acad Sci U S A 2023; 120:e2305197120. [PMID: 38015837 PMCID: PMC10710059 DOI: 10.1073/pnas.2305197120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Accepted: 10/10/2023] [Indexed: 11/30/2023] Open
Abstract
Primary ferroicities like ferroelectricity and ferromagnetism are essential physical properties of matter. Multiferroics, with coexisting multiple ferroic orders in a single phase, provide a convenient route to magnetoelectricity. Even so, the general trade-off between magnetism and polarity remains inevitable, which prevents practicable magnetoelectric cross-control in the multiferroic framework. Here, an alternative strategy, i.e., the so-called alterferroicity, is proposed to circumvent the magnetoelectric exclusiveness, which exhibits multiple but noncoexisting ferroic orders. The natural exclusion between magnetism and polarity, as an insurmountable weakness of multiferroicity, becomes a distinct advantage in alterferroicity, making it an inborn rich ore for intrinsic strong magnetoelectricity. The general design rules for alterferroic materials rely on the competition between the instabilities of phononic and electronic structures in covalent systems. Based on primary density functional theory calculations, Ti-based trichalcogenides are predicted to be alterferroic candidates, which exhibit unique seesaw-type magnetoelectricity. This alterferroicity, as an emerging branch of the ferroic family, reshapes the framework of magnetoelectricity, going beyond the established scenario based on multiferroicity.
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Affiliation(s)
- Ziwen Wang
- School of Physics, Southeast University, Nanjing211189, China
| | - Shuai Dong
- School of Physics, Southeast University, Nanjing211189, China
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44
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Xu X, Hao Y, Peng S, Zhang Q, Ni D, Yang C, Dai X, Cao H, Cava RJ. Large off-diagonal magnetoelectricity in a triangular Co 2+-based collinear antiferromagnet. Nat Commun 2023; 14:8034. [PMID: 38052828 DOI: 10.1038/s41467-023-43858-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 11/22/2023] [Indexed: 12/07/2023] Open
Abstract
Magnetic toroidicity is an uncommon type of magnetic structure in solid-state materials. Here, we experimentally demonstrate that collinear spins in a material with R-3 lattice symmetry can host a significant magnetic toroidicity, even parallel to the ordered spins. Taking advantage of a single crystal sample of CoTe6O13 with an R-3 space group and a Co2+ triangular sublattice, temperature-dependent magnetic, thermodynamic, and neutron diffraction results reveal A-type antiferromagnetic order below 19.5 K, with magnetic point group -3' and k = (0,0,0). Our symmetry analysis suggests that the missing mirror symmetry in the lattice could lead to the local spin canting for a toroidal moment along the c axis. Experimentally, we observe a large off-diagonal magnetoelectric coefficient of 41.2 ps/m that evidences the magnetic toroidicity. In addition, the paramagnetic state exhibits a large effective moment per Co2+, indicating that the magnetic moment in CoTe6O13 has a significant orbital contribution. CoTe6O13 embodies an excellent opportunity for the study of next-generation functional magnetoelectric materials.
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Affiliation(s)
- Xianghan Xu
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA.
| | - Yiqing Hao
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Shiyu Peng
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Qiang Zhang
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Danrui Ni
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA
| | - Chen Yang
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA
| | - Xi Dai
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Huibo Cao
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - R J Cava
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA.
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45
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Saez G, Castro MA, Allende S, Nunez AS. Model for Nonrelativistic Topological Multiferroic Matter. PHYSICAL REVIEW LETTERS 2023; 131:226801. [PMID: 38101376 DOI: 10.1103/physrevlett.131.226801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 08/23/2023] [Accepted: 10/24/2023] [Indexed: 12/17/2023]
Abstract
We provide a model capable of accounting for the multiferroicity in certain materials. The model's base is on free electrons and spin moments coupled within nonrelativistic quantum mechanics. The synergistic interplay between the magnetic and electric degrees of freedom that turns into the multiferroic phenomena occurs at a profound quantum mechanical level, conjured by Berry's phases and the quantum theory of polarization. Our results highlight the geometrical nature of the multiferroic order parameter that naturally leads to magnetoelectric domain walls, with promising technological potential.
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Affiliation(s)
- Guidobeth Saez
- Departamento de Física, Facultad de ciencias físicas y matemáticas, Universidad de Chile, Santiago 8370449, Chile
- Centro de Nanociencia y Nanotecnología CEDENNA, Avda. Ecuador 3493, Santiago, Chile
| | - Mario A Castro
- Centro de Nanociencia y Nanotecnología CEDENNA, Avda. Ecuador 3493, Santiago, Chile
- Departamento de Física, Universidad de Santiago de Chile, 9170124, Santiago, Chile
| | - Sebastian Allende
- Centro de Nanociencia y Nanotecnología CEDENNA, Avda. Ecuador 3493, Santiago, Chile
- Departamento de Física, Universidad de Santiago de Chile, 9170124, Santiago, Chile
| | - Alvaro S Nunez
- Departamento de Física, Facultad de ciencias físicas y matemáticas, Universidad de Chile, Santiago 8370449, Chile
- Centro de Nanociencia y Nanotecnología CEDENNA, Avda. Ecuador 3493, Santiago, Chile
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46
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Wang YX, Su D, Ma Y, Sun Y, Cheng P. Electrical detection and modulation of magnetism in a Dy-based ferroelectric single-molecule magnet. Nat Commun 2023; 14:7901. [PMID: 38036549 PMCID: PMC10689763 DOI: 10.1038/s41467-023-43815-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Accepted: 11/21/2023] [Indexed: 12/02/2023] Open
Abstract
Electrical control of magnetism in single-molecule magnets with peculiar quantum magnetic behaviours has promise for applications in molecular electronics and quantum computing. Nevertheless, such kind of magnetoelectric effects have not been achieved in such materials. Herein, we report the successful realization of significant magnetoelectric effects by introducing ferroelectricity into a dysprosium-based single-molecule magnet through spatial cooperation between flexible organic ligands and halide ions. The stair-shaped magnetization hysteresis loop, alternating current susceptibility, and magnetic relaxation can be directly modulated by applying a moderate electric field. Conversely, the electric polarization can be modulated by applying a small magnetic field. In addition, a resonant magnetodielectric effect is clearly observed, which enables detection of quantum tunnelling of magnetization by a simple electrical measurement. The integration of ferroelectricity into single-molecule magnets not only broadens the family of single-molecule magnets but also makes electrical detection and modulation of the quantum tunnelling of magnetization a reality.
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Affiliation(s)
- Yu-Xia Wang
- Key Laboratory of Advanced Energy Material Chemistry, Frontiers Science Center for New Organic Matter, Renewable Energy Conversion and Storage Center, and Haihe Laboratory of Sustainable Chemical Transformations (Tianjin), College of Chemistry, Nankai University, Tianjin, 300071, China
| | - Dan Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Yinina Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Young Sun
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- Department of Applied Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, 401331, China.
| | - Peng Cheng
- Key Laboratory of Advanced Energy Material Chemistry, Frontiers Science Center for New Organic Matter, Renewable Energy Conversion and Storage Center, and Haihe Laboratory of Sustainable Chemical Transformations (Tianjin), College of Chemistry, Nankai University, Tianjin, 300071, China.
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47
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Lu XZ, Zhang HM, Zhou Y, Zhu T, Xiang H, Dong S, Kageyama H, Rondinelli JM. Out-of-plane ferroelectricity and robust magnetoelectricity in quasi-two-dimensional materials. SCIENCE ADVANCES 2023; 9:eadi0138. [PMID: 37992171 PMCID: PMC10665001 DOI: 10.1126/sciadv.adi0138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 10/23/2023] [Indexed: 11/24/2023]
Abstract
Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization field, however, formed by surface charges can suppress the out-of-plane polarization in ultrathin ferroelectric films that could otherwise exhibit lower coercive fields and operate with lower power. Here, we unveil stabilization of a polar longitudinal optical (LO) mode in the n = 2 Ruddlesden-Popper family that produces out-of-plane ferroelectricity, persists under open-circuit boundary conditions, and is distinct from hyperferroelectricity. Our first-principles calculations show the stabilization of the LO mode is ubiquitous in chalcogenides and halides and relies on anharmonic trilinear mode coupling. We further show that the out-of-plane ferroelectricity can be predicted with a crystallographic tolerance factor, and we use these insights to design a room-temperature multiferroic with strong magnetoelectric coupling suitable for magneto-electric spin-orbit transistors.
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Affiliation(s)
- Xue-Zeng Lu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Hui-Min Zhang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Ying Zhou
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Tong Zhu
- Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
| | - Hongjun Xiang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), Institute of Computational Physical Sciences, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200030, People's Republic of China
| | - Shuai Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Hiroshi Kageyama
- Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
| | - James M Rondinelli
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
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48
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Li H, Zhu W. Spin-Driven Ferroelectricity in Two-Dimensional Magnetic Heterostructures. NANO LETTERS 2023; 23:10651-10656. [PMID: 37955300 DOI: 10.1021/acs.nanolett.3c04030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
Achieving magnetic control of ferroelectricity or electric control of magnetism is usually challenging in material systems as their magnetism and ferroelectricity have distinct fundamental origins and are subject to different symmetry constraints. However, such control has significant promise for a wide range of device applications. In this work, we employ first-principles density functional theory calculations to demonstrate the emergence of spin-driven ferroelectricity in a vertically stacked two-dimensional (2D) van der Waals magnetic heterostructure, formed by two ferromagnetic (FM) CrBr3 layers separated by an antiferromagnetic (AFM) MnPSe3 layer, delicately designed to be structurally inversion symmetric but magnetically asymmetric. The spin-induced out-of-plane electric polarization of the entire heterostructure can be reversibly controlled by an external magnetic field. We further validate the effectiveness of this design strategy in several other lattice-matched FM/AFM/FM heterostructures, thereby providing a novel family of multiferroic systems based on 2D materials.
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Affiliation(s)
- Huiping Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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49
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Gu R, Juvé V, Laulhé C, Bouyanfif H, Vaudel G, Poirier A, Dkhil B, Hollander P, Paillard C, Weber MC, Sando D, Fusil S, Garcia V, Ruello P. Temporal and spatial tracking of ultrafast light-induced strain and polarization modulation in a ferroelectric thin film. SCIENCE ADVANCES 2023; 9:eadi1160. [PMID: 37967179 PMCID: PMC10651133 DOI: 10.1126/sciadv.adi1160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Accepted: 10/16/2023] [Indexed: 11/17/2023]
Abstract
Ultrashort light pulses induce rapid deformations of crystalline lattices. In ferroelectrics, lattice deformations couple directly to the polarization, which opens the perspective to modulate the electric polarization on an ultrafast time scale. Here, we report on the temporal and spatial tracking of strain and polar modulation in a single-domain BiFeO3 thin film by ultrashort light pulses. To map the light-induced deformation of the BiFeO3 unit cell, we perform time-resolved optical reflectivity and time-resolved x-ray diffraction. We show that an optical femtosecond laser pulse generates not only longitudinal but also shear strains. The longitudinal strain peaks at a large amplitude of 0.6%. The access of both the longitudinal and shear strains enables to quantitatively reconstruct the ultrafast deformation of the unit cell and to infer the corresponding reorientation of the ferroelectric polarization direction in space and time. Our findings open new perspectives for ultrafast manipulation of strain-coupled ferroic orders.
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Affiliation(s)
- Ruizhe Gu
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
| | - Vincent Juvé
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
| | - Claire Laulhé
- Synchrotron SOLEIL, L’Orme des Merisiers, Université Paris Saclay, 91190 Saint-Aubin, France
- Université Paris-Saclay, CNRS UMR8502, Laboratoire de Physique des Solides, 91405, Orsay, France
| | - Houssny Bouyanfif
- Laboratoire de Physique de la Matière Condensée, UR2081, Université Jules Vernes Picardie, 80000 Amiens, France
| | - Gwenaëlle Vaudel
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
| | - Aurélie Poirier
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
| | - Brahim Dkhil
- Université Paris-Saclay, CentraleSupélec, CNRS-UMR8580, Laboratoire Structures, Propriétés et Modélisation des Solides, Gif-sur-Yvette, France
| | - Philippe Hollander
- Synchrotron SOLEIL, L’Orme des Merisiers, Université Paris Saclay, 91190 Saint-Aubin, France
| | - Charles Paillard
- Université Paris-Saclay, CentraleSupélec, CNRS-UMR8580, Laboratoire Structures, Propriétés et Modélisation des Solides, Gif-sur-Yvette, France
- University of Arkansas, Physics Department, 825 W Dickson St., Fayetteville, AR 72701, USA
| | - Mads C. Weber
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
| | - Daniel Sando
- School of Materials Science and Engineering, UNSW Sydney, Kensington 2052, Australia
- School of Physical and Chemical Sciences, University of Canterbury, Christchurch 8410 New Zealand
| | - Stéphane Fusil
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, Palaiseau 91767, France
| | - Vincent Garcia
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, Palaiseau 91767, France
| | - Pascal Ruello
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
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50
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Bae IT, Lingley ZR, Foran BJ, Adams PM, Paik H. Large bi-axial tensile strain effect in epitaxial BiFeO 3 film grown on single crystal PrScO 3. Sci Rep 2023; 13:19018. [PMID: 37923812 PMCID: PMC10624869 DOI: 10.1038/s41598-023-45980-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Accepted: 10/26/2023] [Indexed: 11/06/2023] Open
Abstract
A BiFeO3 film is grown epitaxially on a PrScO3 single crystal substrate which imparts ~ 1.45% of biaxial tensile strain to BiFeO3 resulting from lattice misfit. The biaxial tensile strain effect on BiFeO3 is investigated in terms of crystal structure, Poisson ratio, and ferroelectric domain structure. Lattice resolution scanning transmission electron microscopy, precession electron diffraction, and X-ray diffraction results clearly show that in-plane interplanar distance of BiFeO3 is the same as that of PrScO3 with no sign of misfit dislocations, indicating that the biaxial tensile strain caused by lattice mismatch between BiFeO3 and PrScO3 are stored as elastic energy within BiFeO3 film. Nano-beam electron diffraction patterns compared with structure factor calculation found that the BiFeO3 maintains rhombohedral symmetry, i.e., space group of R3c. The pattern analysis also revealed two crystallographically distinguishable domains. Their relations with ferroelectric domain structures in terms of size and spontaneous polarization orientations within the domains are further understood using four-dimensional scanning transmission electron microscopy technique.
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Affiliation(s)
- In-Tae Bae
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90009, USA.
| | - Zachary R Lingley
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90009, USA
| | - Brendan J Foran
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90009, USA
| | - Paul M Adams
- Materials Processing Department, The Aerospace Corporation, El Segundo, CA, 90009, USA
| | - Hanjong Paik
- School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, 73019, USA
- Center for Quantum Research and Technology, University of Oklahoma, Norman, OK, 73019, USA
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