1
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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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2
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Hannachi HE, Jaziri S. Stark effect and orbital hybridization of moiré interlayer excitons in the MoSe 2/WSe 2 heterobilayer. Phys Chem Chem Phys 2024; 26:21753-21766. [PMID: 39099559 DOI: 10.1039/d4cp02161d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
Abstract
In this paper, we undertake a theoretical investigation into the effects of both in-plane and out-of-plane static electric fields on moiré interlayer excitons (IXs) within a WSe2/MoSe2 heterobilayer. We thoroughly analyze a wide range of properties pertaining to the IXs, including the binding energy, Stark shift, orbital hybridization, photoluminescence (PL) spectra, and radiative lifetime. Various factors influencing IX behavior, such as the dielectric environment, spacing separation, and moiré trap effects, are examined in detail. Our results demonstrate that the in-plane electric field leads to energy splitting between states with non-zero angular momentum, such as the 2p± dark states. Consequently, we analyze IX orbital hybridization, including hybrid Rydberg states like 1s, 2p±, and 2s. In contrast, we show that an out-of-plane electric field induced by a double-gate setup causes a quadratic Stark effect on the center of mass (COM) eigenenergies, leading to energy splitting of degenerate states and resulting in orbital hybridization of COM eigenvectors. Additionally, we demonstrate that a parallel electric field brightens the 2p± dark state through a one-photon PL process, due to the hybridization phenomena between s- and p-type Rydberg states. In short, our investigation is in great agreement with previous research and can assist experimenters in designing novel optoelectronic applications, such as on-chip electro-optic modulators and TeraHertz devices.
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Affiliation(s)
- Houssem Eddine Hannachi
- Laboratoire de Physique des Matériaux, Faculté des Sciences de Bizerte, Université de Carthage, 7021 Zarzouna, Tunisia.
| | - Sihem Jaziri
- Laboratoire de Physique des Matériaux, Faculté des Sciences de Bizerte, Université de Carthage, 7021 Zarzouna, Tunisia.
- Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Univerversité de Tunis El Manar, 2092 El Manar, Tunisia.
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3
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Poudyal S, Deka M, Adhikary P, D R, Barman PK, Yadav R, Biswal B, Rajarapu R, Mukherjee S, Nanda BRK, Singh A, Misra A. Room Temperature, Twist Angle Independent, Momentum Direct Interlayer Excitons in van der Waals Heterostructures with Wide Spectral Tunability. NANO LETTERS 2024; 24:9575-9582. [PMID: 39051155 DOI: 10.1021/acs.nanolett.4c02180] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Interlayer excitons (IXs) in van der Waals heterostructures with static out of plane dipole moment and long lifetime show promise in the development of exciton based optoelectronic devices and the exploration of many body physics. However, these IXs are not always observed, as the emission is very sensitive to lattice mismatch and twist angle between the constituent materials. Moreover, their emission intensity is very weak compared to that of corresponding intralayer excitons at room temperature. Here we report the room-temperature realization of twist angle independent momentum direct IX in the heterostructures of bulk PbI2 and bilayer WS2. Momentum conserving transitions combined with the large band offsets between the constituent materials enable intense IX emission at room temperature. A long lifetime (∼100 ns), noticeable Stark shift, and tunability of IX emission from 1.70 to 1.45 eV by varying the number of WS2 layers make these heterostructures promising to develop room temperature exciton based optoelectronic devices.
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Affiliation(s)
- Saroj Poudyal
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for 2D Materials Research and Innovation, IIT Madras, Chennai 600036, India
| | - Mrinal Deka
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for 2D Materials Research and Innovation, IIT Madras, Chennai 600036, India
| | - Priyo Adhikary
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Ranju D
- Department of Physics, Indian Institute of Science, Bengaluru, Karnataka 560012, India
| | - Prahalad Kanti Barman
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for 2D Materials Research and Innovation, IIT Madras, Chennai 600036, India
| | - Renu Yadav
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for 2D Materials Research and Innovation, IIT Madras, Chennai 600036, India
| | - Bubunu Biswal
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for 2D Materials Research and Innovation, IIT Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, IIT Madras, Chennai 600036, India
| | - Ramesh Rajarapu
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for 2D Materials Research and Innovation, IIT Madras, Chennai 600036, India
| | - Shantanu Mukherjee
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Birabar Ranjit Kumar Nanda
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, IIT Madras, Chennai 600036, India
| | - Akshay Singh
- Department of Physics, Indian Institute of Science, Bengaluru, Karnataka 560012, India
| | - Abhishek Misra
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for 2D Materials Research and Innovation, IIT Madras, Chennai 600036, India
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4
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Chen S, Sun Z, Liu H, Xu H, Wang C, Han R, Wang Z, Huang S, Zhao X, Chen Z, Li W, Liu D. Twist angle-dependent interlayer hybridized exciton lifetimes in van der Waals heterostructures. NANOSCALE 2024; 16:14089-14095. [PMID: 39005077 DOI: 10.1039/d4nr00661e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/16/2024]
Abstract
The interlayer twist angle has a direct effect on exciton lifetimes in van der Waals heterostructures. At small angles, the interlayer and intralayer excitons in MoSe2/WS2 heterostructures are hybridized, resulting in hybridized excitons with long lifetimes and strong resonance. However, the study of twist-angle modulation of hybridized exciton lifetimes is still insufficient, leading to an unclear understanding of the mechanism through which the twist angle between layers influences the lifetime of hybridized excitons. Here, we observed the formation of hybridized excitons by constructing MoSe2/WS2 heterostructures with different twist angles. The exciton lifetime is found to increase from 0.5 ns to 3.3 ns when the twist angle is reduced from 12° to 1°. This work provides a new perspective on the modulation of the exciton lifetime, enabling further exploration in improving the efficiency of optoelectronic devices.
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Affiliation(s)
- Shihong Chen
- School of Resources, Environment and Materials, Guangxi University, Guangxi, Nanning 530004, P.R. China
| | - Zejun Sun
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Huan Liu
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Haowen Xu
- Institue for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, China.
| | - Chong Wang
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Rui Han
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Zihao Wang
- School of Resources, Environment and Materials, Guangxi University, Guangxi, Nanning 530004, P.R. China
| | - Shuchun Huang
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
| | - Xiaoliang Zhao
- School of Resources, Environment and Materials, Guangxi University, Guangxi, Nanning 530004, P.R. China
| | - Zekai Chen
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA
| | - Weizhou Li
- School of Materials Science and Engineering, Xiamen University of Technology, Xiamen 361024, P.R. China.
| | - Dameng Liu
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
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5
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Zhang D, Ge C, Wang Y, Xia Y, Zhao H, Yao C, Chen Y, Ma C, Tong Q, Pan A, Wang X. Enhancing Layer-Engineered Interlayer Exciton Emission and Valley Polarization in van der Waals Heterostructures via Strain. ACS NANO 2024; 18:17672-17680. [PMID: 38920321 DOI: 10.1021/acsnano.4c02377] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Layer-engineered interlayer excitons from heterostructures of transition-metal dichalcogenides (TMDCs) exhibit a rich variety of emissive states and intriguing valley spin-selection rules, the effective modulation of which is crucial for excitonic physics and related device applications. Strain or high pressure provides the possibility to tune the energy of the interlayer excitons; however, the reported emission intensity is substantially quenched, which greatly limits their practical application in optoelectronic devices. Here, via applying uniaxial strain based on polyvinyl alcohol (PVA) encapsulation technique, we report enhanced layer-engineered interlayer exciton emission intensity with largely modulated emission energy in WSe2/WS2 heterobilayer and heterotrilayer. Both momentum-direct and momentum-indirect interlayer excitons were observed, and their emission energies show an opposite shift tendency upon applied strain, which agrees with our DFT calculations. We further demonstrate that intralayer and interlayer exciton states with low phonon interactions can be modulated through the mechanical strain applied to the PVA substrate at low temperatures. Due to strain-induced breaking of the 3-fold rotational symmetry, we observe the enhanced valley polarization of interlayer excitons. Our study contributes to the understanding and modulation of the optical properties of interlayer excitons, which could be exploited for optoelectronic device applications.
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Affiliation(s)
- Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Cuihuang Ge
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Youwen Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Yang Xia
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Haipeng Zhao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Qingjun Tong
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
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6
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Xu H, Wang J, Liu H, Chen S, Sun Z, Wang C, Han R, Wang Y, Wang Y, Wang Z, Huang S, Ma L, Liu D. Control of Hybrid Exciton Lifetime in MoSe 2/WS 2 Moiré Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2403127. [PMID: 38970212 DOI: 10.1002/advs.202403127] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Revised: 06/12/2024] [Indexed: 07/08/2024]
Abstract
Hybrid excitons, characterized by their strong oscillation strength and long lifetimes, hold great potential as information carriers in semiconductors. They offer promising applications in exciton-based devices and circuits. MoSe2/WS2 heterostructures represent an ideal platform for studying hybrid excitons, but how to regulate the exciton lifetime has not yet been explored. In this study, layer hybridization is modulated by applying electric fields parallel or antiparallel to the dipole moment, enabling us to regulate the exciton lifetime from 1.36 to 4.60 ns. Furthermore, the time-resolved photoluminescence decay traces are measured at different excitation power. A hybrid exciton annihilation rate of 8.9 × 10-4 cm2 s-1 is obtained by fitting. This work reveals the effects of electric fields and excitation power on the lifetime of hybrid excitons in MoSe2/WS2 1.5° moiré heterostructures, which play important roles in high photoluminescence quantum yield optoelectronic devices based on transition-metal dichalcogenides heterostructures.
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Affiliation(s)
- Haowen Xu
- Institue for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, China
| | - Jiangcai Wang
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing, 100084, China
| | - Huan Liu
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing, 100084, China
| | - Shihong Chen
- School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China
| | - Zejun Sun
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing, 100084, China
| | - Chong Wang
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing, 100084, China
| | - Rui Han
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing, 100084, China
| | - Yong Wang
- Laboratory of Optical Detection and Imaging, School of Science, Qingdao University of Technology, Qingdao, 266033, China
| | - Yutang Wang
- School of Mechanical Engineering and Automation, Northeastern University, Shenyang, 110819, China
| | - Zihao Wang
- School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China
| | - Shuchun Huang
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing, 100084, China
| | - Lingwei Ma
- Institue for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, China
| | - Dameng Liu
- State Key Laboratory of Tribology in Advanced Equipment, Department of Mechanical Engineering, Tsinghua University, Beijing, 100084, China
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7
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Huang Z, Bai Y, Zhao Y, Liu L, Zhao X, Wu J, Watanabe K, Taniguchi T, Yang W, Shi D, Xu Y, Zhang T, Zhang Q, Tan PH, Sun Z, Meng S, Wang Y, Du L, Zhang G. Observation of phonon Stark effect. Nat Commun 2024; 15:4586. [PMID: 38811589 PMCID: PMC11137145 DOI: 10.1038/s41467-024-48992-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Accepted: 05/15/2024] [Indexed: 05/31/2024] Open
Abstract
Stark effect, the electric-field analogue of magnetic Zeeman effect, is one of the celebrated phenomena in modern physics and appealing for emergent applications in electronics, optoelectronics, as well as quantum technologies. While in condensed matter it has prospered only for excitons, whether other collective excitations can display Stark effect remains elusive. Here, we report the observation of phonon Stark effect in a two-dimensional quantum system of bilayer 2H-MoS2. The longitudinal acoustic phonon red-shifts linearly with applied electric fields and can be tuned over ~1 THz, evidencing giant Stark effect of phonons. Together with many-body ab initio calculations, we uncover that the observed phonon Stark effect originates fundamentally from the strong coupling between phonons and interlayer excitons (IXs). In addition, IX-mediated electro-phonon intensity modulation up to ~1200% is discovered for infrared-active phonon A2u. Our results unveil the exotic phonon Stark effect and effective phonon engineering by IX-mediated mechanism, promising for a plethora of exciting many-body physics and potential technological innovations.
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Affiliation(s)
- Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yunfei Bai
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yanchong Zhao
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Le Liu
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xuan Zhao
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jiangbin Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Tiantian Zhang
- CAS Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Qingming Zhang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhipei Sun
- QTF Centre of Excellence, Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Espoo, Finland
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong Province, 523808, China
| | - Yaxian Wang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong Province, 523808, China.
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8
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Feng S, Campbell AJ, Brotons-Gisbert M, Andres-Penares D, Baek H, Taniguchi T, Watanabe K, Urbaszek B, Gerber IC, Gerardot BD. Highly tunable ground and excited state excitonic dipoles in multilayer 2H-MoSe 2. Nat Commun 2024; 15:4377. [PMID: 38782967 DOI: 10.1038/s41467-024-48476-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Accepted: 04/29/2024] [Indexed: 05/25/2024] Open
Abstract
The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb-bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacking configuration to create highly tunable interlayer excitons with static out-of-plane electric dipoles, at the expense of the strength of the oscillating in-plane dipole responsible for light-matter coupling. Here we show that interlayer excitons in bi- and tri-layer 2H-MoSe2 crystals exhibit electric-field-driven coupling with the ground (1s) and excited states (2s) of the intralayer A excitons. We demonstrate that the hybrid states of these distinct exciton species provide strong oscillator strength, large permanent dipoles (up to 0.73 ± 0.01 enm), high energy tunability (up to ~200 meV), and full control of the spin and valley characteristics such that the exciton g-factor can be manipulated over a large range (from -4 to +14). Further, we observe the bi- and tri-layer excited state (2s) interlayer excitons and their coupling with the intralayer excitons states (1s and 2s). Our results, in good agreement with a coupled oscillator model with spin (layer)-selectivity and beyond standard density functional theory calculations, promote multilayer 2H-MoSe2 as a highly tunable platform to explore exciton-exciton interactions with strong light-matter interactions.
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Affiliation(s)
- Shun Feng
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Aidan J Campbell
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Mauro Brotons-Gisbert
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK.
| | - Daniel Andres-Penares
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Hyeonjun Baek
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Bernhard Urbaszek
- Institute of Condensed Matter Physics, Technische Universität Darmstadt, Darmstadt, Germany
| | - Iann C Gerber
- INSA-CNRS-UPS LPCNO, Université de Toulouse, Toulouse, France
| | - Brian D Gerardot
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK.
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9
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Catanzaro A, Genco A, Louca C, Ruiz-Tijerina DA, Gillard DJ, Sortino L, Kozikov A, Alexeev EM, Pisoni R, Hague L, Watanabe K, Taniguchi T, Ensslin K, Novoselov KS, Fal'ko V, Tartakovskii AI. Resonant Band Hybridization in Alloyed Transition Metal Dichalcogenide Heterobilayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309644. [PMID: 38279553 DOI: 10.1002/adma.202309644] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 12/20/2023] [Indexed: 01/28/2024]
Abstract
Bandstructure engineering using alloying is widely utilized for achieving optimized performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, heterobilayers made from monolayers of WSe2 (or MoSe2) and MoxW1 - xSe2 alloy are fabricated and nontrivial tuning of the resultant bandstructure is observed as a function of concentration x. This evolution is monitored by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In MoxW1 - xSe2/WSe2, a strong IX energy shift of ≈100 meV is observed for x varied from 1 to 0.6. However, for x < 0.6 this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe2. This observation is theoretically interpreted as the strong variation of the conduction band K valley for x > 0.6, with IX PL arising from the K - K transition, while for x < 0.6, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K - Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. This work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties.
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Affiliation(s)
- Alessandro Catanzaro
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
| | - Armando Genco
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
- Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci, 32, Milano, 20133, Italy
| | - Charalambos Louca
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
- Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci, 32, Milano, 20133, Italy
| | - David A Ruiz-Tijerina
- Departamento de Física Química, Instituto de Física, Universidad Nacional Autónoma de México, Ciudad de México, C.P., 04510, Mexico, México
| | - Daniel J Gillard
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
| | - Luca Sortino
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Aleksey Kozikov
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
- School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne, NE1 7RU, UK
| | - Evgeny M Alexeev
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, UK
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, UK
| | - Riccardo Pisoni
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, Switzerland
| | - Lee Hague
- National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Klaus Ensslin
- Solid State Physics Laboratory, ETH Zurich, Zurich, CH-8093, Switzerland
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117546, Singapore
| | - Vladimir Fal'ko
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
- Henry Royce Institute for Advanced Materials, University of Manchester, Manchester, M13 9PL, United Kingdom
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10
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Kim J, Park J, Choi H, Kim T, Cha S, Lee Y, Watanabe K, Taniguchi T, Kim J, Jo MH, Choi H. Correlation-driven nonequilibrium exciton site transition in a WSe 2/WS 2 moiré supercell. Nat Commun 2024; 15:3312. [PMID: 38632336 PMCID: PMC11024152 DOI: 10.1038/s41467-024-47768-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Accepted: 04/10/2024] [Indexed: 04/19/2024] Open
Abstract
Moiré superlattices of transition metal dichalcogenides offer a unique platform to explore correlated exciton physics with optical spectroscopy. Whereas the spatially modulated potentials evoke that the exciton resonances are distinct depending on a site in a moiré supercell, there have been no clear demonstration how the moiré excitons trapped in different sites dynamically interact with the doped carriers; so far the exciton-electron dynamic interactions were presumed to be site-dependent. Thus, the transient emergence of nonequilibrium correlations are open questions, but existing studies are limited to steady-state optical measurements. Here we report experimental fingerprints of site-dependent exciton correlations under continuous-wave as well as ultrashort optical excitations. In near-zero angle-aligned WSe2/WS2 heterobilayers, we observe intriguing polarization switching and strongly enhanced Pauli blocking near the Mott insulating state, dictating the dominant correlation-driven effects. When the twist angle is near 60°, no such correlations are observed, suggesting the strong dependence of atomic registry in moiré supercell configuration. Our studies open the door to largely unexplored nonequilibrium correlations of excitons in moiré superlattices.
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Affiliation(s)
- Jinjae Kim
- Department of Physics, Seoul National University, Seoul, 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jiwon Park
- Department of Physics, Seoul National University, Seoul, 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Hyojin Choi
- Department of Physics, Seoul National University, Seoul, 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Taeho Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 37673, Korea
- Center for van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Korea
| | - Soonyoung Cha
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Yewon Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 37673, Korea
- Center for van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Korea
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Jonghwan Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 37673, Korea
- Center for van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Korea
| | - Moon-Ho Jo
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 37673, Korea
- Center for van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Korea
| | - Hyunyong Choi
- Department of Physics, Seoul National University, Seoul, 08826, Korea.
- Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea.
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11
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Zhao S, Huang X, Gillen R, Li Z, Liu S, Watanabe K, Taniguchi T, Maultzsch J, Hone J, Högele A, Baimuratov AS. Hybrid Moiré Excitons and Trions in Twisted MoTe 2-MoSe 2 Heterobilayers. NANO LETTERS 2024. [PMID: 38597670 DOI: 10.1021/acs.nanolett.4c00541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
We report experimental and theoretical studies of MoTe2-MoSe2 heterobilayers with rigid moiré superlattices controlled by the twist angle. Using an effective continuum model that combines resonant interlayer electron tunneling with stacking-dependent moiré potentials, we identify the nature of moiré excitons and the dependence of their energies, oscillator strengths, and Landé g-factors on the twist angle. Within the same framework, we interpret distinct signatures of bound complexes among electrons and moiré excitons in nearly collinear heterostacks. Our work provides a fundamental understanding of hybrid moiré excitons and trions in MoTe2-MoSe2 heterobilayers and establishes the material system as a prime candidate for optical studies of correlated phenomena in moiré lattices.
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Affiliation(s)
- Shen Zhao
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
| | - Xin Huang
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences and School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Roland Gillen
- Department of Physics, Friedrich-Alexander Universität Erlangen-Nürnberg, Staudtstraße 7, 91058 Erlangen, Germany
| | - Zhijie Li
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan and
| | - Janina Maultzsch
- Department of Physics, Friedrich-Alexander Universität Erlangen-Nürnberg, Staudtstraße 7, 91058 Erlangen, Germany
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Alexander Högele
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstraße 4, 80799 München, Germany
| | - Anvar S Baimuratov
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
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12
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Graml M, Zollner K, Hernangómez-Pérez D, Faria Junior PE, Wilhelm J. Low-Scaling GW Algorithm Applied to Twisted Transition-Metal Dichalcogenide Heterobilayers. J Chem Theory Comput 2024; 20:2202-2208. [PMID: 38353944 PMCID: PMC10938508 DOI: 10.1021/acs.jctc.3c01230] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Revised: 12/30/2023] [Accepted: 01/08/2024] [Indexed: 03/13/2024]
Abstract
The GW method is widely used for calculating the electronic band structure of materials. The high computational cost of GW algorithms prohibits their application to many systems of interest. We present a periodic, low-scaling, and highly efficient GW algorithm that benefits from the locality of the Gaussian basis and the polarizability. The algorithm enables G0W0 calculations on a MoSe2/WS2 bilayer with 984 atoms per unit cell, in 42 h using 1536 cores. This is 4 orders of magnitude faster than a plane-wave G0W0 algorithm, allowing for unprecedented computational studies of electronic excitations at the nanoscale.
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Affiliation(s)
- Maximilian Graml
- Institute
of Theoretical Physics, University of Regensburg, 93053 Regensburg, Germany
- Regensburg
Center for Ultrafast Nanoscopy (RUN), University
of Regensburg, 93053 Regensburg, Germany
| | - Klaus Zollner
- Institute
of Theoretical Physics, University of Regensburg, 93053 Regensburg, Germany
| | - Daniel Hernangómez-Pérez
- Department
of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Paulo E. Faria Junior
- Institute
of Theoretical Physics, University of Regensburg, 93053 Regensburg, Germany
| | - Jan Wilhelm
- Institute
of Theoretical Physics, University of Regensburg, 93053 Regensburg, Germany
- Regensburg
Center for Ultrafast Nanoscopy (RUN), University
of Regensburg, 93053 Regensburg, Germany
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13
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You Q, Zhang C, Wang Y, Bi X, Li Z, Zhang L, Zhang D, Fang Y, Wang P. Biexcitons-plasmon coupling of Ag@Au hollow nanocube/MoS 2 heterostructures based on scattering spectra. OPTICS EXPRESS 2024; 32:9105-9115. [PMID: 38571151 DOI: 10.1364/oe.515667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Accepted: 01/26/2024] [Indexed: 04/05/2024]
Abstract
The strong interaction between light and matter is one of the current research hotspots in the field of nanophotonics, and provides a suitable platform for fundamental physics research such as on nanolasers, high-precision sensing in biology, quantum communication and quantum computing. In this study, double Rabi splitting was achieved in a composite structure monolayer MoS2 and a single Ag@Au hollow nanocube (HNC) in room temperature mainly due to the two excitons in monolayer MoS2. Moreover, the tuning of the plasmon resonance peak was realized in the scattering spectrum by adjusting the thickness of the shell to ensure it matches the energy of the two excitons. Two distinct anticrossings are observed at both excitons resonances, and large double Rabi splittings (90 meV and 120 meV) are obtained successfully. The finite-difference time domain (FDTD) method was also used to simulate the scattering spectra of the nanostructures, and the simulation results were in good agreement with the experimental results. Additionally, the local electromagnetic field ability of the Ag@Au hollow HNC was proved to be stronger by calculating and comparing the mode volume of different nanoparticles. Our findings provides a good platform for the realization of strong multi-mode coupling and open up a new way to construct nanoscale photonic devices.
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14
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Altman AR, Kundu S, da Jornada FH. Mixed Stochastic-Deterministic Approach for Many-Body Perturbation Theory Calculations. PHYSICAL REVIEW LETTERS 2024; 132:086401. [PMID: 38457735 DOI: 10.1103/physrevlett.132.086401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Revised: 08/24/2023] [Accepted: 12/05/2023] [Indexed: 03/10/2024]
Abstract
We present an approach for GW calculations of quasiparticle energies with quasiquadratic scaling by approximating high-energy contributions to the Green's function in its Lehmann representation with effective stochastic vectors. The method is easy to implement without altering the GW code, converges rapidly with stochastic parameters, and treats systems of various dimensionality and screening response. Our calculations on a 5.75° twisted MoS_{2} bilayer show how large-scale GW methods include geometry relaxations and electronic correlations on an equal basis in structurally nontrivial materials.
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Affiliation(s)
- Aaron R Altman
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
| | - Sudipta Kundu
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
| | - Felipe H da Jornada
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
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15
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Polovnikov B, Scherzer J, Misra S, Huang X, Mohl C, Li Z, Göser J, Förste J, Bilgin I, Watanabe K, Taniguchi T, Högele A, Baimuratov AS. Field-Induced Hybridization of Moiré Excitons in MoSe_{2}/WS_{2} Heterobilayers. PHYSICAL REVIEW LETTERS 2024; 132:076902. [PMID: 38427888 DOI: 10.1103/physrevlett.132.076902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Accepted: 01/19/2024] [Indexed: 03/03/2024]
Abstract
We study experimentally and theoretically the hybridization among intralayer and interlayer moiré excitons in a MoSe_{2}/WS_{2} heterostructure with antiparallel alignment. Using a dual-gate device and cryogenic white light reflectance and narrow-band laser modulation spectroscopy, we subject the moiré excitons in the MoSe_{2}/WS_{2} heterostack to a perpendicular electric field, monitor the field-induced dispersion and hybridization of intralayer and interlayer moiré exciton states, and induce a crossover from type I to type II band alignment. Moreover, we employ perpendicular magnetic fields to map out the dependence of the corresponding exciton Landé g factors on the electric field. Finally, we develop an effective theoretical model combining resonant and nonresonant contributions to moiré potentials to explain the observed phenomenology, and highlight the relevance of interlayer coupling for structures with close energetic band alignment as in MoSe_{2}/WS_{2}.
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Affiliation(s)
- Borislav Polovnikov
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
- Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Straße 1, 85748 Garching bei München, Germany
| | - Johannes Scherzer
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
| | - Subhradeep Misra
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
| | - Xin Huang
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Christian Mohl
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
| | - Zhijie Li
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
| | - Jonas Göser
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
| | - Jonathan Förste
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
| | - Ismail Bilgin
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Alexander Högele
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstraße 4, 80799 München, Germany
| | - Anvar S Baimuratov
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
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16
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Kang H, Ma J, Li J, Zhang X, Liu X. Exciton Polaritons in Emergent Two-Dimensional Semiconductors. ACS NANO 2023; 17:24449-24467. [PMID: 38051774 DOI: 10.1021/acsnano.3c07993] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
The "marriage" of light (i.e., photon) and matter (i.e., exciton) in semiconductors leads to the formation of hybrid quasiparticles called exciton polaritons with fascinating quantum phenomena such as Bose-Einstein condensation (BEC) and photon blockade. The research of exciton polaritons has been evolving into an era with emergent two-dimensional (2D) semiconductors and photonic structures for their tremendous potential to break the current limitations of quantum fundamental study and photonic applications. In this Perspective, the basic concepts of 2D excitons, optical resonators, and the strong coupling regime are introduced. The research progress of exciton polaritons is reviewed, and important discoveries (especially the recent ones of 2D exciton polaritons) are highlighted. Subsequently, the emergent 2D exciton polaritons are discussed in detail, ranging from the realization of the strong coupling regime in various photonic systems to the discoveries of attractive phenomena with interesting physics and extensive applications. Moreover, emerging 2D semiconductors, such as 2D perovskites (2DPK) and 2D antiferromagnetic (AFM) semiconductors, are surveyed for the manipulation of exciton polaritons with distinct control degrees of freedom (DOFs). Finally, the outlook on the 2D exciton polaritons and their nonlinear interactions is presented with our initial numerical simulations. This Perspective not only aims to provide an in-depth overview of the latest fundamental findings in 2D exciton polaritons but also attempts to serve as a valuable resource to prospect explorations of quantum optics and topological photonic applications.
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Affiliation(s)
- Haifeng Kang
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jingwen Ma
- Faculty of Science and Engineering, The University of Hong Kong, Hong Kong, SAR, P. R. China
| | - Junyu Li
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Xiang Zhang
- Faculty of Science and Engineering, The University of Hong Kong, Hong Kong, SAR, P. R. China
- Department of Physics, The University of Hong Kong, Hong Kong, SAR, P. R. China
| | - Xiaoze Liu
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, P. R. China
- Wuhan University Shenzhen Research Institute, Shenzhen, 518057, P. R. China
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17
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Xie Y, Gao Y, Chen F, Wang Y, Mao J, Liu Q, Chu S, Yang H, Ye Y, Gong Q, Feng J, Gao Y. Bright and Dark Quadrupolar Excitons in the WSe_{2}/MoSe_{2}/WSe_{2} Heterotrilayer. PHYSICAL REVIEW LETTERS 2023; 131:186901. [PMID: 37977607 DOI: 10.1103/physrevlett.131.186901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2023] [Accepted: 09/25/2023] [Indexed: 11/19/2023]
Abstract
Transition metal dichalcogenide heterostructures have been extensively studied as a platform for investigating exciton physics. While heterobilayers such as WSe_{2}/MoSe_{2} have received significant attention, there has been comparatively less research on heterotrilayers, which may offer new excitonic species and phases, as well as unique physical properties. In this Letter, we present theoretical and experimental investigations on the emission properties of quadrupolar excitons (QXs), a newly predicted type of exciton, in a WSe_{2}/MoSe_{2}/WSe_{2} heterotrilayer device. Our findings reveal that the optical brightness or darkness of QXs is determined by horizontal mirror symmetry and valley and spin selection rules. Additionally, the emission intensity and energy of both bright and dark QXs can be adjusted by applying an out-of-plane electric field, due to changes in hole distribution and the Stark effect. These results not only provide experimental evidence for the existence of QXs in heterotrilayers but also uncover their novel properties, which have the potential to drive the development of new exciton-based applications.
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Affiliation(s)
- Yongzhi Xie
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Yuchen Gao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Fengyu Chen
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yunkun Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Jun Mao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Qinyun Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Saisai Chu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Hong Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Ji Feng
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Hefei National Laboratory, Hefei 230088, China
| | - Yunan Gao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
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18
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Jiao C, Pei S, Wu S, Wang Z, Xia J. Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:114503. [PMID: 37774692 DOI: 10.1088/1361-6633/acfe89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Accepted: 09/29/2023] [Indexed: 10/01/2023]
Abstract
Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.
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Affiliation(s)
- Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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19
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Baek JH, Kim HG, Lim SY, Hong SC, Chang Y, Ryu H, Jung Y, Jang H, Kim J, Zhang Y, Watanabe K, Taniguchi T, Huang PY, Cheong H, Kim M, Lee GH. Thermally induced atomic reconstruction into fully commensurate structures of transition metal dichalcogenide layers. NATURE MATERIALS 2023:10.1038/s41563-023-01690-2. [PMID: 37828101 DOI: 10.1038/s41563-023-01690-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 09/13/2023] [Indexed: 10/14/2023]
Abstract
Twist angle between two-dimensional layers is a critical parameter that determines their interfacial properties, such as moiré excitons and interfacial ferro-electricity. To achieve better control over these properties for fundamental studies and various applications, considerable efforts have been made to manipulate twist angle. However, due to mechanical limitations and the inevitable formation of incommensurate regions, there remains a challenge in attaining perfect alignment of crystalline orientation. Here we report a thermally induced atomic reconstruction of randomly stacked transition metal dichalcogenide multilayers into fully commensurate heterostructures with zero twist angle by encapsulation annealing, regardless of twist angles of as-stacked samples and lattice mismatches. We also demonstrate the selective formation of R- and H-type fully commensurate phases with a seamless lateral junction using chemical vapour-deposited transition metal dichalcogenides. The resulting fully commensurate phases exhibit strong photoluminescence enhancement of the interlayer excitons, even at room temperature, due to their commensurate structure with aligned momentum coordinates. Our work not only demonstrates a way to fabricate zero-twisted, two-dimensional bilayers with R- and H-type configurations, but also provides a platform for studying their unexplored properties.
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Affiliation(s)
- Ji-Hwan Baek
- Department of Material Science and Engineering, Seoul National University, Seoul, Korea
| | - Hyoung Gyun Kim
- Department of Material Science and Engineering, Seoul National University, Seoul, Korea
| | - Soo Yeon Lim
- Department of Physics, Sogang University, Seoul, Korea
| | - Seong Chul Hong
- Department of Material Science and Engineering, Seoul National University, Seoul, Korea
| | - Yunyeong Chang
- Department of Material Science and Engineering, Seoul National University, Seoul, Korea
| | - Huije Ryu
- Department of Material Science and Engineering, Seoul National University, Seoul, Korea
| | - Yeonjoon Jung
- Department of Material Science and Engineering, Seoul National University, Seoul, Korea
| | - Hajung Jang
- Department of Physics, Sogang University, Seoul, Korea
| | - Jungcheol Kim
- Department of Physics, Sogang University, Seoul, Korea
| | - Yichao Zhang
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana-Champaign, IL, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Pinshane Y Huang
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana-Champaign, IL, USA
| | | | - Miyoung Kim
- Department of Material Science and Engineering, Seoul National University, Seoul, Korea
| | - Gwan-Hyoung Lee
- Department of Material Science and Engineering, Seoul National University, Seoul, Korea.
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20
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Xie X, Ding J, Wu B, Zheng H, Li S, Wang CT, He J, Liu Z, Wang JT, Liu Y. Pressure-Induced Dynamic Tuning of Interlayer Coupling in Twisted WSe 2/WSe 2 Homobilayers. NANO LETTERS 2023; 23:8833-8841. [PMID: 37726204 DOI: 10.1021/acs.nanolett.3c01640] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
Moiré superlattices induced by twisted van der Waals (vdW) heterostructures or homostructures have recently gained significant attention due to their potential to generate exotic strong-correlation electronic and phonon phenomena. However, the lack of dynamic tuning for interlayer coupling of moiré superlattices hinders a thorough understanding and development of the moiré correlation state. Here, we present a dynamic tuning method for twisted WSe2/WSe2 homobilayers using a diamond anvil cell (DAC). We demonstrate the powerful tuning of interlayer coupling and observe an enhanced response to pressure for interlayer breathing modes and the rapid descent of indirect excitons in twisted WSe2/WSe2 homobilayers. Our findings indicate that the introduction of a moiré superlattice for WSe2 bilayers gives rise to hybridized excitons, which lead to the different pressure-evolution exciton behaviors compared to natural WSe2 bilayers. Our results provide a novel understanding of moiré physics and offer an effective method to tune interlayer coupling of moiré superlattices.
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Affiliation(s)
- Xing Xie
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Junnan Ding
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Biao Wu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Haihong Zheng
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Shaofei Li
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Chang-Tian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jun He
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Camperdown, New South Wales 2006, Australia
- The University of Sydney Nano Institute, The University of Sydney, Camperdown, New South Wales 2006 Australia
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- Shenzhen Research Institute of Central South University, Shenzhen 518000, People's Republic of China
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21
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Yu R, Cao X, Chen Q, Li W, Huang A, Wei X, Mao J. D-Band Center Optimization of Edge-Rich Ultrathin RuZn Nanosheets With Moiré Superlattices for pH-Universal Hydrogen Evolution Reaction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303440. [PMID: 37282780 DOI: 10.1002/smll.202303440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Revised: 05/27/2023] [Indexed: 06/08/2023]
Abstract
Electrocatalytic hydrogen evolution reaction (HER) is a promising way to produce pure and clean hydrogen. However, the preparation of efficient and economical catalysts for pH-universal HER remains a challenging but rewarding task. Herein, ultrathin RuZn nanosheets (NSs) with moiré superlattices and abundant edges are synthesized. The RuZn NSs with unique structure exhibit superb HER performance with overpotentials of 11, 13, and 29 mV to achieve 10 mA cm-2 in 1 M KOH, 1 M PBS, and 0.5 M H2 SO4 , respectively, which is substantially lower than those of Ru NSs and RuZn NSs without moiré superlattices. Density functional theory investigations reveal that the charge transfer from Zn to Ru will lead the appropriate downshift of the d-band center of surface Ru atoms, thus accelerating hydrogen desorption from the Ru sites, lowering the dissociation energy barrier of water and greatly improving the HER performance. This work provides an effective design scheme for high-performance HER electrocatalysts over a wide pH range, and propose a general route to prepare Ru-based bimetallic nanosheets with moiré superlattices.
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Affiliation(s)
- Rui Yu
- Key Laboratory of Functional Molecular Solids, Ministry of Education, Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, 241002, China
| | - Xi Cao
- Key Laboratory of Functional Molecular Solids, Ministry of Education, Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, 241002, China
| | - Qingqing Chen
- Key Laboratory of Functional Molecular Solids, Ministry of Education, Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, 241002, China
| | - Wenjiang Li
- Key Laboratory of Functional Molecular Solids, Ministry of Education, Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, 241002, China
| | - Aijian Huang
- School of Electronics Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Xianwen Wei
- Key Laboratory of Functional Molecular Solids, Ministry of Education, Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, 241002, China
- School of Chemistry and Chemical Engineering, Institute of Materials Sciences and Engineering, Anhui University of Technology, Maanshan, 243 002, China
| | - Junjie Mao
- Key Laboratory of Functional Molecular Solids, Ministry of Education, Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, 241002, China
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22
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Ripin A, Peng R, Zhang X, Chakravarthi S, He M, Xu X, Fu KM, Cao T, Li M. Tunable phononic coupling in excitonic quantum emitters. NATURE NANOTECHNOLOGY 2023; 18:1020-1026. [PMID: 37264087 DOI: 10.1038/s41565-023-01410-6] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Accepted: 04/28/2023] [Indexed: 06/03/2023]
Abstract
Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. An outstanding case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here we report the deterministic creation of quantum emitters featuring highly tunable coupling between excitons and phonons. The quantum emitters are formed in strain-induced quantum dots created in homobilayer WSe2. The colocalization of quantum-confined interlayer excitons and terahertz interlayer breathing-mode phonons, which directly modulates the exciton energy, leads to a uniquely strong phonon coupling to single-photon emission, with a Huang-Rhys factor reaching up to 6.3. The single-photon spectrum of interlayer exciton emission features a single-photon purity >83% and multiple phonon replicas, each heralding the creation of a phonon Fock state in the quantum emitter. Due to the vertical dipole moment of the interlayer exciton, the phonon-photon interaction is electrically tunable to be higher than the exciton and phonon decoherence rate, and hence promises to reach the strong-coupling regime. Our result demonstrates a solid-state quantum excitonic-optomechanical system at the atomic interface of the WSe2 bilayer that emits flying photonic qubits coupled with stationary phonons, which could be exploited for quantum transduction and interconnection.
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Affiliation(s)
- Adina Ripin
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Ruoming Peng
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA.
| | - Xiaowei Zhang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | | | - Minhao He
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Kai-Mei Fu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, WA, USA
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Mo Li
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA.
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23
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Lian Z, Chen D, Meng Y, Chen X, Su Y, Banerjee R, Taniguchi T, Watanabe K, Tongay S, Zhang C, Cui YT, Shi SF. Exciton Superposition across Moiré States in a Semiconducting Moiré Superlattice. Nat Commun 2023; 14:5042. [PMID: 37598211 PMCID: PMC10439888 DOI: 10.1038/s41467-023-40783-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Accepted: 08/10/2023] [Indexed: 08/21/2023] Open
Abstract
Moiré superlattices of semiconducting transition metal dichalcogenides enable unprecedented spatial control of electron wavefunctions, leading to emerging quantum states. The breaking of translational symmetry further introduces a new degree of freedom: high symmetry moiré sites of energy minima behaving as spatially separated quantum dots. We demonstrate the superposition between two moiré sites by constructing a trilayer WSe2/monolayer WS2 moiré heterojunction. The two moiré sites in the first layer WSe2 interfacing WS2 allow the formation of two different interlayer excitons, with the hole residing in either moiré site of the first layer WSe2 and the electron in the third layer WSe2. An electric field can drive the hybridization of either of the interlayer excitons with the intralayer excitons in the third WSe2 layer, realizing the continuous tuning of interlayer exciton hopping between two moiré sites and a superposition of the two interlayer excitons, distinctively different from the natural trilayer WSe2.
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Affiliation(s)
- Zhen Lian
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Dongxue Chen
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Yuze Meng
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Xiaotong Chen
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Ying Su
- Department of Physics, University of Texas, Dallas, TX, 75083, USA
| | - Rounak Banerjee
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Chuanwei Zhang
- Department of Physics, University of Texas, Dallas, TX, 75083, USA
| | - Yong-Tao Cui
- Department of Physics and Astronomy, University of California, Riverside, California, 92521, USA.
| | - Su-Fei Shi
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
- Department of Electrical, Computer & Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
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24
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Lian Z, Chen D, Ma L, Meng Y, Su Y, Yan L, Huang X, Wu Q, Chen X, Blei M, Taniguchi T, Watanabe K, Tongay S, Zhang C, Cui YT, Shi SF. Quadrupolar excitons and hybridized interlayer Mott insulator in a trilayer moiré superlattice. Nat Commun 2023; 14:4604. [PMID: 37528094 PMCID: PMC10393975 DOI: 10.1038/s41467-023-40288-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/10/2023] [Accepted: 07/21/2023] [Indexed: 08/03/2023] Open
Abstract
Transition metal dichalcogenide (TMDC) moiré superlattices, owing to the moiré flatbands and strong correlation, can host periodic electron crystals and fascinating correlated physics. The TMDC heterojunctions in the type-II alignment also enable long-lived interlayer excitons that are promising for correlated bosonic states, while the interaction is dictated by the asymmetry of the heterojunction. Here we demonstrate a new excitonic state, quadrupolar exciton, in a symmetric WSe2-WS2-WSe2 trilayer moiré superlattice. The quadrupolar excitons exhibit a quadratic dependence on the electric field, distinctively different from the linear Stark shift of the dipolar excitons in heterobilayers. This quadrupolar exciton stems from the hybridization of WSe2 valence moiré flatbands. The same mechanism also gives rise to an interlayer Mott insulator state, in which the two WSe2 layers share one hole laterally confined in one moiré unit cell. In contrast, the hole occupation probability in each layer can be continuously tuned via an out-of-plane electric field, reaching 100% in the top or bottom WSe2 under a large electric field, accompanying the transition from quadrupolar excitons to dipolar excitons. Our work demonstrates a trilayer moiré system as a new exciting playground for realizing novel correlated states and engineering quantum phase transitions.
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Affiliation(s)
- Zhen Lian
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Dongxue Chen
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Lei Ma
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Yuze Meng
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Ying Su
- Department of Physics, University of Texas at Dallas, Dallas, TX, 75083, USA
| | - Li Yan
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Xiong Huang
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
- Department of Materials Science and Engineering, University of California, Riverside, CA, 92521, USA
| | - Qiran Wu
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Xinyue Chen
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Mark Blei
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Chuanwei Zhang
- Department of Physics, University of Texas at Dallas, Dallas, TX, 75083, USA
| | - Yong-Tao Cui
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA.
| | - Su-Fei Shi
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
- Department of Electrical, Computer & Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
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25
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Tagarelli F, Lopriore E, Erkensten D, Perea-Causín R, Brem S, Hagel J, Sun Z, Pasquale G, Watanabe K, Taniguchi T, Malic E, Kis A. Electrical control of hybrid exciton transport in a van der Waals heterostructure. NATURE PHOTONICS 2023; 17:615-621. [PMID: 37426431 PMCID: PMC10322698 DOI: 10.1038/s41566-023-01198-w] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Accepted: 03/10/2023] [Indexed: 07/11/2023]
Abstract
Interactions between out-of-plane dipoles in bosonic gases enable the long-range propagation of excitons. The lack of direct control over collective dipolar properties has so far limited the degrees of tunability and the microscopic understanding of exciton transport. In this work we modulate the layer hybridization and interplay between many-body interactions of excitons in a van der Waals heterostructure with an applied vertical electric field. By performing spatiotemporally resolved measurements supported by microscopic theory, we uncover the dipole-dependent properties and transport of excitons with different degrees of hybridization. Moreover, we find constant emission quantum yields of the transporting species as a function of excitation power with radiative decay mechanisms dominating over nonradiative ones, a fundamental requirement for efficient excitonic devices. Our findings provide a complete picture of the many-body effects in the transport of dilute exciton gases, and have crucial implications for studying emerging states of matter such as Bose-Einstein condensation and optoelectronic applications based on exciton propagation.
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Affiliation(s)
- Fedele Tagarelli
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Edoardo Lopriore
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Daniel Erkensten
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Raül Perea-Causín
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Samuel Brem
- Department of Physics, Philipps-Universität Marburg, Marburg, Germany
| | - Joakim Hagel
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Zhe Sun
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Gabriele Pasquale
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Ermin Malic
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
- Department of Physics, Philipps-Universität Marburg, Marburg, Germany
| | - Andras Kis
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
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26
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Faria Junior PE, Fabian J. Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe 2/WSe 2 Heterobilayers: From Energy Bands to Dipolar Excitons. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1187. [PMID: 37049281 PMCID: PMC10096971 DOI: 10.3390/nano13071187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 03/22/2023] [Accepted: 03/24/2023] [Indexed: 06/19/2023]
Abstract
Multilayered van der Waals heterostructures based on transition metal dichalcogenides are suitable platforms on which to study interlayer (dipolar) excitons, in which electrons and holes are localized in different layers. Interestingly, these excitonic complexes exhibit pronounced valley Zeeman signatures, but how their spin-valley physics can be further altered due to external parameters-such as electric field and interlayer separation-remains largely unexplored. Here, we perform a systematic analysis of the spin-valley physics in MoSe2/WSe2 heterobilayers under the influence of an external electric field and changes of the interlayer separation. In particular, we analyze the spin (Sz) and orbital (Lz) degrees of freedom, and the symmetry properties of the relevant band edges (at K, Q, and Γ points) of high-symmetry stackings at 0° (R-type) and 60° (H-type) angles-the important building blocks present in moiré or atomically reconstructed structures. We reveal distinct hybridization signatures on the spin and the orbital degrees of freedom of low-energy bands, due to the wave function mixing between the layers, which are stacking-dependent, and can be further modified by electric field and interlayer distance variation. We find that H-type stackings favor large changes in the g-factors as a function of the electric field, e.g., from -5 to 3 in the valence bands of the Hhh stacking, because of the opposite orientation of Sz and Lz of the individual monolayers. For the low-energy dipolar excitons (direct and indirect in k-space), we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. Furthermore, our results show that direct dipolar excitons carry a robust valley Zeeman effect nearly independent of the electric field, but tunable by the interlayer distance, which can be rendered experimentally accessible via applied external pressure. For the momentum-indirect dipolar excitons, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. In particular, for the indirect excitons with conduction bands at the Q point for H-type stackings, we find marked variations of the valley Zeeman (∼4) as a function of the electric field, which notably stands out from the other dipolar exciton species. Our analysis suggests that stronger signatures of the coupled spin-valley physics are favored in H-type stackings, which can be experimentally investigated in samples with twist angle close to 60°. In summary, our study provides fundamental microscopic insights into the spin-valley physics of van der Waals heterostructures, which are relevant to understanding the valley Zeeman splitting of dipolar excitonic complexes, and also intralayer excitons.
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Zheng W, Xiang L, de Quesada FA, Augustin M, Lu Z, Wilson M, Sood A, Wu F, Shcherbakov D, Memaran S, Baumbach RE, McCandless GT, Chan JY, Liu S, Edgar JH, Lau CN, Lui CH, Santos EJG, Lindenberg A, Smirnov D, Balicas L. Thickness- and Twist-Angle-Dependent Interlayer Excitons in Metal Monochalcogenide Heterostructures. ACS NANO 2022; 16:18695-18707. [PMID: 36257051 DOI: 10.1021/acsnano.2c07394] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two-dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely, γ-InSe on ε-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct band gaps. Time-dependent photoluminescense spectroscopy unveils considerably longer interlayer exciton lifetimes with respect to intralayer ones, thus confirming their nature. The linear Stark effect yields a bound electron-hole pair whose separation d is just (3.6 ± 0.1) Å with d being very close to dSe = 3.4 Å which is the calculated interfacial Se separation. The envelope of IX is twist-angle-dependent and describable by superimposed emissions that are nearly equally spaced in energy, as if quantized due to localization induced by the small moiré periodicity. These heterostacks are characterized by extremely flat interfacial valence bands making them prime candidates for the observation of magnetism or other correlated electronic phases upon carrier doping.
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Affiliation(s)
- Wenkai Zheng
- National High Magnetic Field Laboratory, Tallahassee, Florida32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida32306, United States
| | - Li Xiang
- National High Magnetic Field Laboratory, Tallahassee, Florida32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida32306, United States
| | - Felipe A de Quesada
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California94025, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California94305, United States
| | - Mathias Augustin
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, EdinburghEH9 3FD, United Kingdom
- Higgs Centre for Theoretical Physics, The University of Edinburgh, EdinburghEH9 3FD, United Kingdom
| | - Zhengguang Lu
- National High Magnetic Field Laboratory, Tallahassee, Florida32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida32306, United States
| | - Matthew Wilson
- Department of Physics and Astronomy, University of California, Riverside, California92521, United States
| | - Aditya Sood
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California94025, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California94305, United States
| | - Fengcheng Wu
- School of Physics and Technology, Wuhan University, Wuhan, 430072China
| | - Dmitry Shcherbakov
- Department of Physics, The Ohio State University, Columbus, Ohio43210, United States
| | - Shahriar Memaran
- National High Magnetic Field Laboratory, Tallahassee, Florida32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida32306, United States
| | - Ryan E Baumbach
- National High Magnetic Field Laboratory, Tallahassee, Florida32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida32306, United States
| | - Gregory T McCandless
- Department of Chemistry and Biochemistry, Baylor University, Waco, Texas76798, United States
| | - Julia Y Chan
- Department of Chemistry and Biochemistry, Baylor University, Waco, Texas76798, United States
| | - Song Liu
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas66506, United States
| | - James H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas66506, United States
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, Ohio43210, United States
| | - Chun Hung Lui
- Department of Physics and Astronomy, University of California, Riverside, California92521, United States
| | - Elton J G Santos
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, EdinburghEH9 3FD, United Kingdom
- Higgs Centre for Theoretical Physics, The University of Edinburgh, EdinburghEH9 3FD, United Kingdom
- Donostia International Physics Centre, 20018Donostia-San Sebastian, Spain
| | - Aaron Lindenberg
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California94025, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California94305, United States
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, Florida32310, United States
| | - Luis Balicas
- National High Magnetic Field Laboratory, Tallahassee, Florida32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida32306, United States
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Gobato YG, de Brito CS, Chaves A, Prosnikov MA, Woźniak T, Guo S, Barcelos ID, Milošević MV, Withers F, Christianen PCM. Distinctive g-Factor of Moiré-Confined Excitons in van der Waals Heterostructures. NANO LETTERS 2022; 22:8641-8646. [PMID: 36279205 DOI: 10.1021/acs.nanolett.2c03008] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
We investigated the valley Zeeman splitting of excitonic peaks in the microphotoluminescence (μPL) spectra of high-quality hBN/WS2/MoSe2/hBN heterostructures under perpendicular magnetic fields up to 20 T. We identify two neutral exciton peaks in the μPL spectra; the lower-energy peak exhibits a reduced g-factor relative to that of the higher energy peak and much lower than the recently reported values for interlayer excitons in other van der Waals (vdW) heterostructures. We provide evidence that such a discernible g-factor stems from the spatial confinement of the exciton in the potential landscape created by the moiré pattern due to lattice mismatch or interlayer twist in heterobilayers. This renders magneto-μPL an important tool to reach a deeper understanding of the effect of moiré patterns on excitonic confinement in vdW heterostructures.
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Affiliation(s)
- Y Galvão Gobato
- Physics Department, Federal University of São Carlos, São Carlos, São Paulo13565-905, Brazil
| | - C Serati de Brito
- Physics Department, Federal University of São Carlos, São Carlos, São Paulo13565-905, Brazil
| | - A Chaves
- Departamento de Física, Universidade Federal do Ceará, Fortaleza, Ceará60455-760, Brazil
- Department of Physics and NANOlab Center of Excellence, University of Antwerp, 2020Antwerp, Belgium
| | - M A Prosnikov
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 EDNijmegen, The Netherlands
| | - T Woźniak
- Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, 50-370Wrocław, Poland
| | - Shi Guo
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, U.K
| | - Ingrid D Barcelos
- Brazilian Synchrotron Light Laboratory (LNLS), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo13083-970, Brazil
| | - M V Milošević
- Department of Physics and NANOlab Center of Excellence, University of Antwerp, 2020Antwerp, Belgium
- Instituto de Física, Universidade Federal de Mato Grosso, Cuiabá, Mato Grosso78060-900, Brazil
| | - F Withers
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, U.K
| | - P C M Christianen
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 EDNijmegen, The Netherlands
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29
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Datta B, Khatoniar M, Deshmukh P, Thouin F, Bushati R, De Liberato S, Cohen SK, Menon VM. Highly nonlinear dipolar exciton-polaritons in bilayer MoS 2. Nat Commun 2022; 13:6341. [PMID: 36284098 PMCID: PMC9596727 DOI: 10.1038/s41467-022-33940-3] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Accepted: 10/07/2022] [Indexed: 11/24/2022] Open
Abstract
Realizing nonlinear optical response in the low photon density limit in solid-state systems has been a long-standing challenge. Semiconductor microcavities in the strong coupling regime hosting exciton-polaritons have emerged as attractive candidates in this context. However, the weak interaction between these quasiparticles has been a hurdle in this quest. Dipolar excitons provide an attractive strategy to overcome this limitation but are often hindered by their weak oscillator strength. The interlayer dipolar excitons in naturally occurring homobilayer MoS2 alleviates this issue owing to their formation via hybridization of interlayer charge transfer exciton with intralayer B exciton. Here we demonstrate the formation of dipolar exciton polaritons in bilayer MoS2 resulting in unprecedented nonlinear interaction strengths. A ten-fold increase in nonlinearity is observed for the interlayer dipolar excitons compared to the conventional A excitons. These highly nonlinear dipolar polaritons will likely be a frontrunner in the quest for solid-state quantum nonlinear devices. Dipolar excitons enable large nonlinear interaction but are usually hampered by their weak oscillator strength. Here, the authors demonstrate the strong light-matter coupling of interlayer dipolar excitons having unusually large oscillator strength in bilayer MoS2 resulting in highly nonlinear dipolar polaritons.
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Affiliation(s)
- Biswajit Datta
- grid.254250.40000 0001 2264 7145Department of Physics, City College of New York, New York, NY USA
| | - Mandeep Khatoniar
- grid.254250.40000 0001 2264 7145Department of Physics, City College of New York, New York, NY USA ,grid.253482.a0000 0001 0170 7903Department of Physics, Graduate Center of the City University of New York (CUNY), New York, NY USA
| | - Prathmesh Deshmukh
- grid.254250.40000 0001 2264 7145Department of Physics, City College of New York, New York, NY USA ,grid.253482.a0000 0001 0170 7903Department of Physics, Graduate Center of the City University of New York (CUNY), New York, NY USA
| | - Félix Thouin
- grid.183158.60000 0004 0435 3292Department of Engineering Physics, École Polytechnique de Montréal, Montréal, QC Canada
| | - Rezlind Bushati
- grid.254250.40000 0001 2264 7145Department of Physics, City College of New York, New York, NY USA ,grid.253482.a0000 0001 0170 7903Department of Physics, Graduate Center of the City University of New York (CUNY), New York, NY USA
| | - Simone De Liberato
- grid.5491.90000 0004 1936 9297School of Physics and Astronomy, University of Southampton, Southampton, UK
| | - Stephane Kena Cohen
- grid.183158.60000 0004 0435 3292Department of Engineering Physics, École Polytechnique de Montréal, Montréal, QC Canada
| | - Vinod M. Menon
- grid.254250.40000 0001 2264 7145Department of Physics, City College of New York, New York, NY USA ,grid.253482.a0000 0001 0170 7903Department of Physics, Graduate Center of the City University of New York (CUNY), New York, NY USA
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30
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Sponfeldner L, Leisgang N, Shree S, Paradisanos I, Watanabe K, Taniguchi T, Robert C, Lagarde D, Balocchi A, Marie X, Gerber IC, Urbaszek B, Warburton RJ. Capacitively and Inductively Coupled Excitons in Bilayer MoS_{2}. PHYSICAL REVIEW LETTERS 2022; 129:107401. [PMID: 36112433 DOI: 10.1103/physrevlett.129.107401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 01/21/2022] [Accepted: 06/30/2022] [Indexed: 06/15/2023]
Abstract
The coupling of intralayer A and B excitons and interlayer excitons (IE) is studied in a two-dimensional semiconductor, homobilayer MoS_{2}. It is shown that the measured optical susceptibility reveals both the magnitude and the phase of the coupling constants. The IE and B excitons couple via a 0-phase (capacitive) coupling; the IE and A excitons couple via a π-phase (inductive) coupling. The IE-B and IE-A coupling mechanisms are interpreted as hole tunneling and electron-hole exchange, respectively. The couplings imply that even in a monolayer, the A and B excitons have mixed spin states. Using the IE as a sensor, the A-B intravalley exchange coupling is determined. Finally, we realize a bright and highly tunable lowest-energy momentum-direct exciton at high electric fields.
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Affiliation(s)
- Lukas Sponfeldner
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Nadine Leisgang
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Shivangi Shree
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Ioannis Paradisanos
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Cedric Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Delphine Lagarde
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Andrea Balocchi
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Xavier Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Iann C Gerber
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Bernhard Urbaszek
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Richard J Warburton
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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31
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Xu Y, Kang K, Watanabe K, Taniguchi T, Mak KF, Shan J. A tunable bilayer Hubbard model in twisted WSe 2. NATURE NANOTECHNOLOGY 2022; 17:934-939. [PMID: 35915334 DOI: 10.1038/s41565-022-01180-7] [Citation(s) in RCA: 32] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Accepted: 06/22/2022] [Indexed: 06/15/2023]
Abstract
Moiré materials with flat electronic bands provide a highly controllable quantum system for studies of strong-correlation physics and topology. In particular, angle-aligned heterobilayers of semiconducting transition metal dichalcogenides with large band offset realize the single-band Hubbard model. Introduction of a new layer degree of freedom is expected to foster richer interactions, enabling Hund's physics, interlayer exciton condensation and new superconducting pairing mechanisms to name a few. Here we report competing electronic states in twisted AB-homobilayer WSe2, which realizes a bilayer Hubbard model in the weak interlayer hopping limit for holes. By layer-polarizing holes via a perpendicular electric field, we observe a crossover from an excitonic insulator to a charge-transfer insulator at a hole density of ν = 1 (in units of moiré density), a transition from a paramagnetic to an antiferromagnetic charge-transfer insulator at ν = 2 and evidence for a layer-selective Mott insulator at 1 < ν < 2. The unique coupling of charge and spin to external electric and magnetic fields also manifests a giant magnetoelectric response. Our results establish a new solid-state simulator for the bilayer Hubbard model Hamiltonian.
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Affiliation(s)
- Yang Xu
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
| | - Kaifei Kang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Department of Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
| | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Department of Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
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32
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Tang Y, Gu J, Liu S, Watanabe K, Taniguchi T, Hone JC, Mak KF, Shan J. Dielectric catastrophe at the Wigner-Mott transition in a moiré superlattice. Nat Commun 2022; 13:4271. [PMID: 35879303 PMCID: PMC9314335 DOI: 10.1038/s41467-022-32037-1] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Accepted: 07/12/2022] [Indexed: 11/08/2022] Open
Abstract
The bandwidth-tuned Wigner-Mott transition is an interaction-driven phase transition from a generalized Wigner crystal to a Fermi liquid. Because the transition is generally accompanied by both magnetic and charge-order instabilities, it remains unclear if a continuous Wigner-Mott transition exists. Here, we demonstrate bandwidth-tuned metal-insulator transitions at fixed fractional fillings of a MoSe2/WS2 moiré superlattice. The bandwidth is controlled by an out-of-plane electric field. The dielectric response is probed optically with the 2s exciton in a remote WSe2 sensor layer. The exciton spectral weight is negligible for the metallic state with a large negative dielectric constant. It continuously vanishes when the transition is approached from the insulating side, corresponding to a diverging dielectric constant or a 'dielectric catastrophe' driven by the critical charge dynamics near the transition. Our results support the scenario of continuous Wigner-Mott transitions in two-dimensional triangular lattices and stimulate future explorations of exotic quantum phases in their vicinities.
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Affiliation(s)
- Yanhao Tang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Interdisciplinary Center for Quantum Information, Zhejiang Province Key Laboratory of Quantum Technology, and Department of Physics, Zhejiang University, Hangzhou, 310027, China.
| | - Jie Gu
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, 305-0044, Tsukuba, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, 305-0044, Tsukuba, Japan
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
| | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
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33
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Zheng H, Zhai D, Yao W. Anomalous Magneto-Optical Response and Chiral Interface of Dipolar Excitons at Twisted Valleys. NANO LETTERS 2022; 22:5466-5472. [PMID: 35713477 DOI: 10.1021/acs.nanolett.2c01508] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
An anomalous magneto-optical spectrum is discovered for dipolar valley excitons in twisted double-layer transition metal dichalcogenides, where the in-plane magnetic field induces a sizable multiplet splitting of exciton states inside the light cone. Chiral dispersions of the split branches make possible an efficient optical injection of the unidirectional exciton current. We also find an analog effect with a modest heterostrain replacing the magnetic field for introducing large splitting and chiral dispersions in the light cone. Angular orientation of the photoinjected exciton flow can be controlled by strain, with left-right unidirectionality selected by circular polarization.
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Affiliation(s)
- Huiyuan Zheng
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Dawei Zhai
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Wang Yao
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
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34
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Mak KF, Shan J. Semiconductor moiré materials. NATURE NANOTECHNOLOGY 2022; 17:686-695. [PMID: 35836003 DOI: 10.1038/s41565-022-01165-6] [Citation(s) in RCA: 74] [Impact Index Per Article: 37.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2022] [Accepted: 05/26/2022] [Indexed: 06/15/2023]
Abstract
Moiré materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moiré materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane-Mele-Hubbard physics and equilibrium moiré excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moiré materials.
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Affiliation(s)
- Kin Fai Mak
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
| | - Jie Shan
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
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35
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Camacho-Guardian A, Cooper NR. Moiré-Induced Optical Nonlinearities: Single- and Multiphoton Resonances. PHYSICAL REVIEW LETTERS 2022; 128:207401. [PMID: 35657862 DOI: 10.1103/physrevlett.128.207401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2021] [Revised: 10/14/2021] [Accepted: 04/11/2022] [Indexed: 06/15/2023]
Abstract
Moiré excitons promise a new platform with which to generate and manipulate hybrid quantum phases of light and matter in unprecedented regimes of interaction strength. We explore the properties in this regime, through studies of a Bose-Hubbard model of excitons coupled to cavity photons. We show that the steady states exhibit a rich phase diagram with pronounced bistabilities governed by multiphoton resonances reflecting the strong interexciton interactions. In the presence of an incoherent pumping of excitons we find that the system can realize single- and multiphoton lasers.
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Affiliation(s)
- A Camacho-Guardian
- T.C.M. Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - N R Cooper
- T.C.M. Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
- Department of Physics and Astronomy, University of Florence, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy
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36
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Chuang MH, Chen CA, Liu PY, Zhang XQ, Yeh NY, Shih HJ, Lee YH. Scalable Moiré Lattice with Oriented TMD Monolayers. NANOSCALE RESEARCH LETTERS 2022; 17:34. [PMID: 35286495 PMCID: PMC8921411 DOI: 10.1186/s11671-022-03670-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Accepted: 01/30/2022] [Indexed: 06/14/2023]
Abstract
Moiré lattice in artificially stacked monolayers of two-dimensional (2D) materials effectively modulates the electronic structures of materials, which is widely highlighted. Formation of the electronic Moiré superlattice promises the prospect of uniformity among different moiré cells across the lattice, enabling a new platform for novel properties, such as unconventional superconductivity, and scalable quantum emitters. Recently, epitaxial growth of the monolayer transition metal dichalcogenide (TMD) is achieved on the sapphire substrate by chemical vapor deposition (CVD) to realize scalable growth of highly-oriented monolayers. However, fabrication of the scalable Moiré lattice remains challenging due to the lack of essential manipulation of the well-aligned monolayers for clean interface quality and precise twisting angle control. Here, scalable and highly-oriented monolayers of TMD are realized on the sapphire substrates by using the customized CVD process. Controlled growth of the epitaxial monolayers is achieved by promoting the rotation of the nuclei-like domains in the initial growth stage, enabling aligned domains for further grain growth in the steady-state stage. A full coverage and distribution of the highly-oriented domains are verified by second-harmonic generation (SHG) microscopy. By developing the method for clean monolayer manipulation, hetero-stacked bilayer (epi-WS2/epi-MoS2) is fabricated with the specific angular alignment of the two major oriented monolayers at the edge direction of 0°/ ± 60°. On account of the optimization for scalable Moiré lattice with a high-quality interface, the observation of interlayer exciton at low temperature illustrates the feasibility of scalable Moiré superlattice based on the oriented monolayers.
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Affiliation(s)
- Meng-Hsi Chuang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Chun-An Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Po-Yen Liu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Xin-Quan Zhang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Nai-Yu Yeh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Hao-Jen Shih
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Yi-Hsien Lee
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan.
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37
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Huang D, Choi J, Shih CK, Li X. Excitons in semiconductor moiré superlattices. NATURE NANOTECHNOLOGY 2022; 17:227-238. [PMID: 35288673 DOI: 10.1038/s41565-021-01068-y] [Citation(s) in RCA: 62] [Impact Index Per Article: 31.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2021] [Accepted: 12/06/2021] [Indexed: 06/14/2023]
Abstract
Semiconductor moiré superlattices represent a rapidly developing area of engineered photonic materials and a new platform to explore correlated electron states and quantum simulation. In this Review, we briefly introduce early experiments that identified new exciton resonances in transition metal dichalcogenide heterobilayers and discuss several topics including two types of transition metal dichalcogenide moiré superlattice, new optical selection rules, early evidence of moiré excitons, and how the resonant energy, dynamics and diffusion properties of moiré excitons can be controlled via the twist angle. To interpret optical spectra, it is important to measure the energy modulation within a moiré supercell. In this context, we describe a few scanning tunnelling microscopy experiments that measure the moiré potential landscape directly. Finally, we review a few recent experiments that applied excitonic optical spectroscopy to probe correlated electron phenomena in transition metal dichalcogenide moiré superlattices.
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Affiliation(s)
- Di Huang
- Physics Department and Center for Complex Quantum Systems, The University of Texas-Austin, Austin, TX, USA.
| | - Junho Choi
- Physics Department and Center for Complex Quantum Systems, The University of Texas-Austin, Austin, TX, USA
- Texas Materials Institute and Center for Dynamics and Control of Materials, The University of Texas-Austin, Austin, TX, USA
| | - Chih-Kang Shih
- Physics Department and Center for Complex Quantum Systems, The University of Texas-Austin, Austin, TX, USA
- Texas Materials Institute and Center for Dynamics and Control of Materials, The University of Texas-Austin, Austin, TX, USA
| | - Xiaoqin Li
- Physics Department and Center for Complex Quantum Systems, The University of Texas-Austin, Austin, TX, USA.
- Texas Materials Institute and Center for Dynamics and Control of Materials, The University of Texas-Austin, Austin, TX, USA.
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38
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Wilson NP, Lee K, Cenker J, Xie K, Dismukes AH, Telford EJ, Fonseca J, Sivakumar S, Dean C, Cao T, Roy X, Xu X, Zhu X. Interlayer electronic coupling on demand in a 2D magnetic semiconductor. NATURE MATERIALS 2021; 20:1657-1662. [PMID: 34312534 DOI: 10.1038/s41563-021-01070-8] [Citation(s) in RCA: 46] [Impact Index Per Article: 15.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2021] [Accepted: 06/30/2021] [Indexed: 06/13/2023]
Abstract
When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moiré bands that host highly correlated electronic states and quantum dot-like interlayer exciton lattices. Here we show the magnetic control of interlayer electronic coupling, as manifested in tunable excitonic transitions, in an A-type antiferromagnetic 2D semiconductor CrSBr. Excitonic transitions in bilayers and above can be drastically changed when the magnetic order is switched from the layered antiferromagnetic ground state to a field-induced ferromagnetic state, an effect attributed to the spin-allowed interlayer hybridization of electron and hole orbitals in the latter, as revealed by Green's function-Bethe-Salpeter equation (GW-BSE) calculations. Our work uncovers a magnetic approach to engineer electronic and excitonic effects in layered magnetic semiconductors.
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Affiliation(s)
- Nathan P Wilson
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Kihong Lee
- Department of Chemistry, Columbia University, New York, NY, USA
| | - John Cenker
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Kaichen Xie
- Department of Material Science & Engineering, University of Washington, Seattle, WA, USA
| | | | - Evan J Telford
- Department of Chemistry, Columbia University, New York, NY, USA
- Department of Physics and Astronomy, Columbia University, New York, NY, USA
| | - Jordan Fonseca
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Shivesh Sivakumar
- Department of Material Science & Engineering, University of Washington, Seattle, WA, USA
| | - Cory Dean
- Department of Physics and Astronomy, Columbia University, New York, NY, USA
| | - Ting Cao
- Department of Material Science & Engineering, University of Washington, Seattle, WA, USA.
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, USA.
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Material Science & Engineering, University of Washington, Seattle, WA, USA.
| | - Xiaoyang Zhu
- Department of Chemistry, Columbia University, New York, NY, USA.
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39
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Shree S, Lagarde D, Lombez L, Robert C, Balocchi A, Watanabe K, Taniguchi T, Marie X, Gerber IC, Glazov MM, Golub LE, Urbaszek B, Paradisanos I. Interlayer exciton mediated second harmonic generation in bilayer MoS 2. Nat Commun 2021; 12:6894. [PMID: 34824259 PMCID: PMC8617052 DOI: 10.1038/s41467-021-27213-8] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Accepted: 11/04/2021] [Indexed: 11/09/2022] Open
Abstract
Second-harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also interlayer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations. Since interlayer exciton transitions are highly tunable also by choosing twist angle and material combination our results open up new approaches for designing the SHG response of layered materials.
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Affiliation(s)
- Shivangi Shree
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Delphine Lagarde
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Laurent Lombez
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Cedric Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Andrea Balocchi
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Xavier Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Iann C Gerber
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | | | | | - Bernhard Urbaszek
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France.
| | - Ioannis Paradisanos
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France.
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40
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Zhang W, You JB, Liu J, Xiong X, Li Z, Png CE, Wu L, Qiu CW, Zhou ZK. Steering Room-Temperature Plexcitonic Strong Coupling: A Diexcitonic Perspective. NANO LETTERS 2021; 21:8979-8986. [PMID: 34644095 DOI: 10.1021/acs.nanolett.1c02248] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Plexcitonic strong coupling between a plasmon-polariton and a quantum emitter empowers ultrafast quantum manipulations in the nanoscale under ambient conditions. The main body of previous studies deals with homogeneous quantum emitters. To enable multiqubit states for future quantum computing and network, the strong coupling involving two excitons of the same material but different resonant energies has been investigated and observed primarily at very low temperature. Here, we report a room-temperature diexcitonic strong coupling (DiSC) nanosystem in which the excitons of a transition metal dichalcogenide monolayer and dye molecules are both strongly coupled to a single Au nanocube. Coherent information exchange in this DiSC nanosystem could be observed even when exciton energy detuning is about five times larger than the respective line widths. The strong coupling behaviors in such a DiSC nanosystem can be manipulated by tuning the plasmon resonant energies and the coupling strengths, opening up a paradigm of controlling plasmon-assisted coherent energy transfer.
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Affiliation(s)
- Wenbo Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Jia-Bin You
- Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis, Singapore 138632
| | - Jingfeng Liu
- College of Electronic Engineering, South China Agricultural University, Guangzhou 510642, China
| | - Xiao Xiong
- Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis, Singapore 138632
| | - Zixian Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Ching Eng Png
- Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis, Singapore 138632
| | - Lin Wu
- Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis, Singapore 138632
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583
| | - Zhang-Kai Zhou
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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41
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Wang X, Zhu J, Seyler KL, Rivera P, Zheng H, Wang Y, He M, Taniguchi T, Watanabe K, Yan J, Mandrus DG, Gamelin DR, Yao W, Xu X. Moiré trions in MoSe 2/WSe 2 heterobilayers. NATURE NANOTECHNOLOGY 2021; 16:1208-1213. [PMID: 34531556 DOI: 10.1038/s41565-021-00969-2] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2021] [Accepted: 07/26/2021] [Indexed: 05/25/2023]
Abstract
Transition metal dichalcogenide moiré bilayers with spatially periodic potentials have emerged as a highly tunable platform for studying both electronic1-6 and excitonic4,7-13 phenomena. The power of these systems lies in the combination of strong Coulomb interactions with the capability of controlling the charge number in a moiré potential trap. Electronically, exotic charge orders at both integer and fractional fillings have been discovered2,5. However, the impact of charging effects on excitons trapped in moiré potentials is poorly understood. Here, we report the observation of moiré trions and their doping-dependent photoluminescence polarization in H-stacked MoSe2/WSe2 heterobilayers. We find that as moiré traps are filled with either electrons or holes, new sets of interlayer exciton photoluminescence peaks with narrow linewidths emerge about 7 meV below the energy of the neutral moiré excitons. Circularly polarized photoluminescence reveals switching from co-circular to cross-circular polarizations as moiré excitons go from being negatively charged and neutral to positively charged. This switching results from the competition between valley-flip and spin-flip energy relaxation pathways of photo-excited electrons during interlayer trion formation. Our results offer a starting point for engineering both bosonic and fermionic many-body effects based on moiré excitons14.
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Affiliation(s)
- Xi Wang
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Chemistry, University of Washington, Seattle, WA, USA
| | - Jiayi Zhu
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Kyle L Seyler
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Pasqual Rivera
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Huiyuan Zheng
- Department of Physics, University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Yingqi Wang
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Minhao He
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Jiaqiang Yan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA
| | - David G Mandrus
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, USA
| | - Daniel R Gamelin
- Department of Chemistry, University of Washington, Seattle, WA, USA
| | - Wang Yao
- Department of Physics, University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
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42
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WS 2 moiré superlattices derived from mechanical flexibility for hydrogen evolution reaction. Nat Commun 2021; 12:5070. [PMID: 34417457 PMCID: PMC8379161 DOI: 10.1038/s41467-021-25381-1] [Citation(s) in RCA: 70] [Impact Index Per Article: 23.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2021] [Accepted: 06/25/2021] [Indexed: 11/12/2022] Open
Abstract
The discovery of moiré superlattices (MSLs) opened an era in the research of ‘twistronics’. Engineering MSLs and realizing unique emergent properties are key challenges. Herein, we demonstrate an effective synthetic strategy to fabricate MSLs based on mechanical flexibility of WS2 nanobelts by a facile one-step hydrothermal method. Unlike previous MSLs typically created through stacking monolayers together with complicated method, WS2 MSLs reported here could be obtained directly during synthesis of nanobelts driven by the mechanical instability. Emergent properties are found including superior conductivity, special superaerophobicity and superhydrophilicity, and strongly enhanced electro-catalytic activity when we apply ‘twistronics’ to the field of catalytic hydrogen production. Theoretical calculations show that such excellent catalytic performance could be attributed to a closer to thermoneutral hydrogen adsorption free energy value of twisted bilayers active sites. Our findings provide an exciting opportunity to design advanced WS2 catalysts through moiré superlattice engineering based on mechanical flexibility. Expanding the available materials with moiré superlattices is interesting but also challenging. Here the authors use a one-step hydrothermal approach to synthesis WS2 moiré superlattices with high catalytic activity for hydrogen evolution reaction
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43
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Liu E, Taniguchi T, Watanabe K, Gabor NM, Cui YT, Lui CH. Excitonic and Valley-Polarization Signatures of Fractional Correlated Electronic Phases in a WSe_{2}/WS_{2} Moiré Superlattice. PHYSICAL REVIEW LETTERS 2021; 127:037402. [PMID: 34328773 DOI: 10.1103/physrevlett.127.037402] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2021] [Accepted: 05/27/2021] [Indexed: 06/13/2023]
Abstract
We have measured the reflectance contrast, photoluminescence, and valley polarization of a WSe_{2}/WS_{2} heterobilayer moiré superlattice at gate-tunable charge density. We observe absorption modulation of three intralayer moiré excitons at filling factors ν=1/3 and 2/3. We also observe luminescence modulation of interlayer trions at around a dozen fractional filling factors, including ν=-3/2, 1/4, 1/3, 2/5, 2/3, 6/7, 5/3. Remarkably, the valley polarization of interlayer trions is suppressed at some fractional fillings. These results demonstrate that electron crystallization can modulate the absorption, emission, and valley dynamics of the excitonic states in a moiré superlattice.
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Affiliation(s)
- Erfu Liu
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science (NIMS), 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
| | - Nathaniel M Gabor
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
- Canadian Institute for Advanced Research, MaRS Centre West Tower, 661 University Avenue, Toronto, Ontario ON M5G 1M1, Canada
| | - Yong-Tao Cui
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
| | - Chun Hung Lui
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
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44
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Zhu Y, Wang B, Li Z, Zhang J, Tang Y, Torres JF, Lipiński W, Fu L, Lu Y. A High-Efficiency Wavelength-Tunable Monolayer LED with Hybrid Continuous-Pulsed Injection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101375. [PMID: 34096112 DOI: 10.1002/adma.202101375] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2021] [Revised: 04/08/2021] [Indexed: 06/12/2023]
Abstract
High-efficiency and wavelength-tunable light-emitting diode (LED) devices will play an important role in future advanced optoelectronic systems. Traditional semiconductor LED devices typically have a fixed emission wavelength that is determined by the energy of the emission states. Here, a novel high-efficiency and wavelength-tunable monolayer WS2 LED device, which operates in the hybrid mode of continuous-pulsed injection, is developed. This hybrid injection enables highly enhanced emission efficiency (>20 times) and effective size of emission area (>5 times) at room temperature. The emission wavelength of the WS2 monolayer LED device can be tuned over more than 40 nm by driving AC voltages, from exciton emission to trion emission, and further to defect emission. The quantum efficiency of defect electroluminescence (EL) emission is measured to be more than 24.5 times larger than that from free exciton and trion EL emission. The separate carrier injection in the LED also demonstrates advantages in allowing defect species to be visualized and distinguished in real space. Those defects are assigned to be negatively charged defects. The results open a new route to develop high-performance and wavelength-tunable LED devices for future advanced optoelectronic applications.
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Affiliation(s)
- Yi Zhu
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, the Australian National University, Canberra, ACT, 2601, Australia
| | - Bowen Wang
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, the Australian National University, Canberra, ACT, 2601, Australia
| | - Jian Zhang
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
| | - Yilin Tang
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
| | - Juan F Torres
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
| | - Wojciech Lipiński
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, the Australian National University, Canberra, ACT, 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, the Australian National University, Canberra, ACT, 2601, Australia
| | - Yuerui Lu
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, the Australian National University, Canberra, ACT, 2601, Australia
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45
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Zhang L, Wu F, Hou S, Zhang Z, Chou YH, Watanabe K, Taniguchi T, Forrest SR, Deng H. Van der Waals heterostructure polaritons with moiré-induced nonlinearity. Nature 2021; 591:61-65. [PMID: 33658695 DOI: 10.1038/s41586-021-03228-5] [Citation(s) in RCA: 56] [Impact Index Per Article: 18.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2020] [Accepted: 01/12/2021] [Indexed: 11/09/2022]
Abstract
Controlling matter-light interactions with cavities is of fundamental importance in modern science and technology1. This is exemplified in the strong-coupling regime, where matter-light hybrid modes form, with properties that are controllable by optical-wavelength photons2,3. By contrast, matter excitations on the nanometre scale are harder to access. In two-dimensional van der Waals heterostructures, a tunable moiré lattice potential for electronic excitations may form4, enabling the generation of correlated electron gases in the lattice potentials5-9. Excitons confined in moiré lattices have also been reported10,11, but no cooperative effects have been observed and interactions with light have remained perturbative12-15. Here, by integrating MoSe2-WS2 heterobilayers in a microcavity, we establish cooperative coupling between moiré-lattice excitons and microcavity photons up to the temperature of liquid nitrogen, thereby integrating versatile control of both matter and light into one platform. The density dependence of the moiré polaritons reveals strong nonlinearity due to exciton blockade, suppressed exciton energy shift and suppressed excitation-induced dephasing, all of which are consistent with the quantum confined nature of the moiré excitons. Such a moiré polariton system combines strong nonlinearity and microscopic-scale tuning of matter excitations using cavity engineering and long-range light coherence, providing a platform with which to study collective phenomena from tunable arrays of quantum emitters.
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Affiliation(s)
- Long Zhang
- Physics Department, University of Michigan, Ann Arbor, MI, USA.,Department of Physics, Xiamen University, Xiamen, China
| | - Fengcheng Wu
- Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, MD, USA
| | - Shaocong Hou
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA
| | - Zhe Zhang
- Physics Department, University of Michigan, Ann Arbor, MI, USA
| | - Yu-Hsun Chou
- Department of Photonics, National Cheng Kung University, Tainan, Taiwan, ROC
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Stephen R Forrest
- Physics Department, University of Michigan, Ann Arbor, MI, USA.,Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA
| | - Hui Deng
- Physics Department, University of Michigan, Ann Arbor, MI, USA.
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