1
|
Jeong J, Park H, Kim J, Moon H, Choi H, Kim E, Jeon S, Kim Y, Woo J. Hf 0.4Zr 0.6O 2 Thickness-Dependent Transfer Characteristics of In xZn 1-xO y Channel Ferroelectric FETs. J Phys Chem Lett 2024; 15:10258-10264. [PMID: 39360934 DOI: 10.1021/acs.jpclett.4c02201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/11/2024]
Abstract
We investigate how the threshold voltage (VT) is adjusted to create a memory window (MW) in ferroelectric field-effect transistors (FeFETs) composed of ferroelectric Hf0.4Zr0.6O2 and InZnO (In2O3:ZnO = 9:1 wt %). Temperature-dependent polarization measurements reveal a dipole switching in Hf0.4Zr0.6O2. The properties of the n-type InZnO channel are examined by fabricating an oxide transistor with an HfO2 gate dielectric. Upon replacement of HfO2 with Hf0.4Zr0.6O2 in the oxide transistor, a counterclockwise MW is observed. Specifically, as the Hf0.4Zr0.6O2 thickness increases from 16 to 24 nm, the VT of the FeFET after a + gate voltage (VG) sweep remains nearly constant, while the VT after a -VG sweep shifts significantly from -0.9 to 0.5 V. The enlarged MW of approximately 2 V, which is proportional to the Hf0.4Zr0.6O2 thickness in the FeFET, can be explained by considering the balance between VG controllability across the gate stack and the ferroelectric switching of Hf0.4Zr0.6O2.
Collapse
Affiliation(s)
- Jiae Jeong
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, South Korea
| | - Hyoungjin Park
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, South Korea
| | - Jihyun Kim
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
| | - Hojin Moon
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
| | - Hyeonsik Choi
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, South Korea
| | - Eunjin Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, South Korea
| | - Seonuk Jeon
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, South Korea
| | - Yunsur Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, South Korea
| | - Jiyong Woo
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, South Korea
| |
Collapse
|
2
|
Guo J, Tao L, Xu X, Hou L, Nan CW, Du S, Chen C, Ma J. Rhombohedral R3 Phase of Mn-Doped Hf 0.5Zr 0.5O 2 Epitaxial Films with Robust Ferroelectricity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406038. [PMID: 39380399 DOI: 10.1002/adma.202406038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2024] [Revised: 09/02/2024] [Indexed: 10/10/2024]
Abstract
HfO2-based ferroelectric materials are emerging as key components for next-generation nanoscale devices, owing to their exceptional nanoscale properties and compatibility with established silicon-based electronics infrastructure. Despite the considerable attention garnered by the ferroelectric orthorhombic phase, the polar rhombohedral phase has remained relatively unexplored due to the inherent challenges in its stabilization. In this study, the successful synthesis of a distinct ferroelectric rhombohedral phase is reported, i.e., the R3 phase, in Mn-doped Hf0.5Zr0.5O2 (HZM) epitaxial thin films, which stands different from the conventional Pca21 and R3m polar phases. These findings reveal that this R3 phase HZM film exhibits a remnant polarization of up to 47 µC cm- 2 at room temperature, along with an exceptional retention capability projected to exceed a decade and an endurance surpassing 109 cycles. Moreover, it is demonstrated that by modulating the concentration of Mn dopant and the film's thickness, it is possible to selectively control the phase transition between the R3, R3m, and Pca21 polar phases. This research not only sheds new light on the ferroelectricity of the HfO2 system but also paves the way for innovative strategies to manipulate ferroelectric properties for enhanced device performance.
Collapse
Affiliation(s)
- Jiasheng Guo
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Lei Tao
- University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xing Xu
- Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX, 78249, USA
| | - Lingxuan Hou
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ce-Wen Nan
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Shixuan Du
- University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Chonglin Chen
- Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX, 78249, USA
| | - Jing Ma
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| |
Collapse
|
3
|
Athle R, Hill MO, Irish A, Chen H, Timm R, Kristensson E, Wallentin J, Borg M. Ferroelectricity in Ultrathin HfO 2-Based Films by Nanosecond Laser Annealing. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39359120 DOI: 10.1021/acsami.4c10002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/04/2024]
Abstract
Nonvolatile memory devices based on ferroelectric HfxZr1-xO2 (HZO) show great promise for back-end integrable storage and for neuromorphic accelerators, but their adoption is held back by the inability to scale down the HZO thickness without violating the strict thermal restrictions of the Si CMOS back end of line. In this work, we overcome this challenge and demonstrate the use of nanosecond pulsed laser annealing (NLA) to locally crystallize areas of an ultrathin (3.6 nm) HZO film into the ferroelectric orthorhombic phase. Meanwhile, the heat induced by the pulsed laser is confined to the layers above the Si, allowing for back-end compatible integration. We use a combination of electrical characterization, nanofocused scanning X-ray diffraction (nano-XRD), and synchrotron X-ray photoelectron spectroscopy (SXPS) to gain a comprehensive view of the change in material and interface properties by systematically varying both laser energy and the number of laser pulses on the same sample. We find that NLA can provide remanent polarization up to 2Pr= 11.6 μC/cm2 in 3.6 nm HZO, albeit with a significant wake-up effect. The improved TiN/HZO interface observed by XPS explains why device endurance goes beyond 107 cycles, whereas an identical film processed by rapid thermal processing (RTP) breaks already after 106 cycles. All in all, NLA provides a promising approach to scale down the ferroelectric oxide thickness for emerging HZO ferroelectric devices, which is key for their integration in scaled process nodes.
Collapse
Affiliation(s)
- Robin Athle
- Electrical and Information Technology, Lund University, Box 118, Lund 22 100, Sweden
- NanoLund, Lund University, Box 118, Lund 22 100, Sweden
| | - Megan O Hill
- NanoLund, Lund University, Box 118, Lund 22 100, Sweden
- Division of Synchrotron Radiation Research, Lund University, Box 118, Lund 22 100, Sweden
- MAX IV Laboratory, Lund University, Box 118, Lund 22 100, Sweden
| | - Austin Irish
- NanoLund, Lund University, Box 118, Lund 22 100, Sweden
- Division of Synchrotron Radiation Research, Lund University, Box 118, Lund 22 100, Sweden
| | - Huaiyu Chen
- NanoLund, Lund University, Box 118, Lund 22 100, Sweden
- Division of Synchrotron Radiation Research, Lund University, Box 118, Lund 22 100, Sweden
| | - Rainer Timm
- NanoLund, Lund University, Box 118, Lund 22 100, Sweden
- Division of Synchrotron Radiation Research, Lund University, Box 118, Lund 22 100, Sweden
| | - Elias Kristensson
- Division of Combustion Physics, Lund University, Box 118, Lund 22 100, Sweden
- Lund Laser Center, Lund University, Box 118, Lund 22 100, Sweden
| | - Jesper Wallentin
- NanoLund, Lund University, Box 118, Lund 22 100, Sweden
- Division of Synchrotron Radiation Research, Lund University, Box 118, Lund 22 100, Sweden
| | - Mattias Borg
- Electrical and Information Technology, Lund University, Box 118, Lund 22 100, Sweden
- NanoLund, Lund University, Box 118, Lund 22 100, Sweden
| |
Collapse
|
4
|
Vasiljevic M, Chiabrera F, Alikin D, Motti F, Bergne A, Zamudio-García J, Qin X, Dagur D, Yun S, Marrero-López D, Vinai G, Castelli I, Kholkin A, Esposito V. Tunable Ferroionic Properties in CeO 2/BaTiO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:50679-50689. [PMID: 39268861 DOI: 10.1021/acsami.4c09477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/15/2024]
Abstract
Ferroionic materials combine ferroelectric properties and spontaneous polarization with ionic phenomena of fast charge recombination and electrodic functionalities. In this paper, we propose the concept of tunable polarization in CeO2-δ (ceria) thin (5 nm) films induced by built-in remnant polarization of a BaTiO3 (BTO) ferroelectric thin film interface, which is buried under the ceria layer. Upward and downward fixed polarizations at the BTO thin film (10 nm) are achieved by the lattice termination engineering of the SrO or TiO2 terminated Nb:SrTiO3 (NSTO or STN) substrate. We find that the ceria layer punctually replicates the polarization of the BTO interface via a dynamic reconfiguration of its intrinsic defects, i.e., oxygen vacancies and small polarons. Tunable oxidative or reducing properties (redox) also arise at the surface from the built-in polarization. Opposite polarities at the ceria termination tune the chemo-physical dynamics toward water molecule adsorbates. The inversion of the surface potential leads to a modulation of the water adsorption-desorption equilibrium and water ionization (splitting) redox overpotentials within ±400 mV at room temperature, depending on the ceria termination's charges. Such tunability opens up the perspectives of using ferroionics for wireless electrochemically enhanced catalysis.
Collapse
Affiliation(s)
- Milica Vasiljevic
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800, Kongens Lyngby, Denmark
| | - Francesco Chiabrera
- Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 2a Pl., Sant Adrià del Besòs, Barcelona 08930, Spain
| | - Denis Alikin
- Department of Physics & CICECO - Aveiro Institute of Materials, Universty of Aveiro, Aveiro 3810-193, Portugal
| | - Federico Motti
- CNR - Istituto Officina dei Materiali (IOM), Area Science Park, S.S.14, km 163.5, I-34149 Trieste, Italy
| | - Achilles Bergne
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800, Kongens Lyngby, Denmark
| | - Javier Zamudio-García
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800, Kongens Lyngby, Denmark
| | - Xueping Qin
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800, Kongens Lyngby, Denmark
| | - Deepak Dagur
- CNR - Istituto Officina dei Materiali (IOM), Area Science Park, S.S.14, km 163.5, I-34149 Trieste, Italy
| | - Shinhee Yun
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800, Kongens Lyngby, Denmark
| | | | - Giovanni Vinai
- CNR - Istituto Officina dei Materiali (IOM), Area Science Park, S.S.14, km 163.5, I-34149 Trieste, Italy
| | - Ivano Castelli
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800, Kongens Lyngby, Denmark
| | - Andrei Kholkin
- Department of Physics & CICECO - Aveiro Institute of Materials, Universty of Aveiro, Aveiro 3810-193, Portugal
| | - Vincenzo Esposito
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800, Kongens Lyngby, Denmark
| |
Collapse
|
5
|
Park K, Kim D, Lee K, Lee HJ, Kim J, Kang S, Lin A, Pattison AJ, Theis W, Kim CH, Choi H, Cho JW, Ercius P, Lee JH, Chae SC, Park J. Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO 2 Thin Film. ACS NANO 2024. [PMID: 39265148 DOI: 10.1021/acsnano.4c08721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/14/2024]
Abstract
Ferroelectric HfO2-based thin films have attracted much interest in the utilization of ferroelectricity at the nanoscale for next-generation electronic devices. However, the structural origin and stabilization mechanism of the ferroelectric phase are not understood because the film is typically nanocrystalline with active yet stochastic ferroelectric domains. Here, electron microscopy is used to map the in-plane domain network structures of epitaxially grown ferroelectric Y:HfO2 films in atomic resolution. The ferroelectricity is confirmed in free-standing Y:HfO2 films, allowing for investigating the structural origin for their ferroelectricity by 4D-STEM, high-resolution STEM, and iDPC-STEM. At the grain boundaries of <111>-oriented Pca21 orthorhombic grains, a high-symmetry mixed-(R3m, Pnm21) phase is induced, exhibiting enhanced polarization due to in-plane compressive strain. Nanoscale Pca21 orthorhombic grains and their grain boundaries with mixed-(R3m, Pnm21) phases of higher symmetry cooperatively determine the ferroelectricity of the Y:HfO2 film. It is also found that such ferroelectric domain networks emerge when the film thickness is beyond a finite value. Furthermore, in-plane mapping of oxygen positions overlaid on ferroelectric domains discloses that polarization is suppressed at vertical domain walls, while it is active when domains are aligned horizontally with subangstrom domain walls. In addition, randomly distributed 180° charged domain walls are confined by spacer layers.
Collapse
Affiliation(s)
- Kunwoo Park
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Dongmin Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, Gyeonggi-do 16678, Republic of Korea
| | - Kyoungjun Lee
- Department of Physics Education, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyun-Jae Lee
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jihoon Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Sungsu Kang
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Alex Lin
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Alexander J Pattison
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Wolfgang Theis
- Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT, U.K
| | - Chang Hoon Kim
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyesung Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Jung Woo Cho
- Department of Physics Education, Seoul National University, Seoul 08826, Republic of Korea
| | - Peter Ercius
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Jun Hee Lee
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Seung Chul Chae
- Department of Physics Education, Seoul National University, Seoul 08826, Republic of Korea
| | - Jungwon Park
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Institute of Engineering Research, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon-si, Gyeonggi-do 16229, Republic of Korea
| |
Collapse
|
6
|
Zheng C, Li X, Li W, Chen T, Lv F, Huang Y, Li Q, Wu Y, Hong Z. A molecular ferroelectric thin film of imidazolium perchlorate on silicon. Nat Commun 2024; 15:7767. [PMID: 39237566 PMCID: PMC11377775 DOI: 10.1038/s41467-024-52207-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Accepted: 08/29/2024] [Indexed: 09/07/2024] Open
Abstract
Molecular ferroelectrics have garnered significant attention due to their structural tunability, low synthesis temperature, and high flexibility. Herein, we successfully synthesized imidazole perchlorate (ImClO4) single crystals and high-quality, highly-oriented thin films on Si substrates. These films demonstrated a high inverse piezoelectric coefficient of 55.7 pm/V. Two types of domain bands were observed: type-I bands tilted ~60° relative to the horizontal axis, and type-II bands positioned perpendicular to the horizontal axis. Under a + 20 V bias, type-I bands showed a reduction and detachment of 180° domain walls to form a needle-like domain. It extended toward the band boundary after applying -20 V bias, which grew along the boundary upon contact. In contrast, type-II bands showed straight domain wall motion and displayed a higher piezoresponse than type-I bands. The growth of high quality molecular ferroelectric thin films on Si substrates paves the way for the development of on-chip devices.
Collapse
Affiliation(s)
- Congqin Zheng
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Xin Li
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Wei Li
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Tiantian Chen
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Fu Lv
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Yuhui Huang
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
| | - Qian Li
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Yongjun Wu
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
| | - Zijian Hong
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, Zhejiang, China.
- Zhejiang Key Laboratory of Advanced Solid State Energy Storage Technology and Applications, Taizhou Institute of Zhejiang University, Taizhou, Zhejiang, China.
| |
Collapse
|
7
|
Chen RS, Lu Y. Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304445. [PMID: 37899295 DOI: 10.1002/smll.202304445] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2023] [Revised: 09/20/2023] [Indexed: 10/31/2023]
Abstract
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices. However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann Tyranny, which limits the scaling of SS to sub-60 mV dec-1 at room temperature. Ferroelectric gate stack with negative capacitance (NC) is proved to reduce the SS effectively by the amplification of the gate voltage. With the application of 2D ferroelectric materials, the NC FETs can be further improved in performance and downscaled to a smaller dimension as well. This review introduces some related concepts for in-depth understanding of NC FETs, including the NC, internal gate voltage, SS, negative drain-induced barrier lowering, negative differential resistance, single-domain state, and multi-domain state. Meanwhile, this work summarizes the recent advances of the 2D NC FETs. Moreover, the electrical characteristics of some high-performance NC FETs are expressed as well. The factors which affect the performance of the 2D NC FETs are also presented in this paper. Finally, this work gives a brief summary and outlook for the 2D NC FETs.
Collapse
Affiliation(s)
- Ruo-Si Chen
- School of Engineering, College of Engineering, Computing & Cybernetics, Australian National University, Canberra, ACT, 2602, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering, Computing & Cybernetics, Australian National University, Canberra, ACT, 2602, Australia
| |
Collapse
|
8
|
Bu K, Feng X, Wang D, Fu T, Ma Y, Guo S, Luo H, Ding Y, Zhai T, Lü X. Quantifying Structural Polarization by Continuous Regulation of Lone-Pair Electron Expression in Molecular Crystals. J Am Chem Soc 2024; 146:22469-22475. [PMID: 39090075 DOI: 10.1021/jacs.4c05927] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/04/2024]
Abstract
Rational design of structural polarization is vital for modern technologies, as it allows the physical properties of functional materials to be tailored. An effective approach for governing polarization involves the utilization of stereochemical lone-pair electrons (LPEs). However, despite the recognized significance of LPEs in controlling structural polarization, there remains a lack of understanding regarding the quantitative relationship between their expression and the extent of structural polarization. Here, by using pressure to continuously tune the LPE expression, we achieve the precise control and quantification of structural polarization, which brings enhanced second harmonic generation (SHG) of the molecular crystal SbI3·3S8. We introduce the I-Sb-I angle (α̅) that describes the degree of LPE expression and establishes a quantitative relationship between α̅ and structural polarization. That is, decreasing α̅ shapes LPE expression from delocalization to localization, which repels the bonding pairs of electrons and thus enhances the structural polarization. In addition, we extend this quantified relationship to a series of molecular crystals and demonstrate its applicability to the design of structural polarization by tailoring LPE expression.
Collapse
Affiliation(s)
- Kejun Bu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Xin Feng
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Dong Wang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Tonghuan Fu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Yiran Ma
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Songhao Guo
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Hui Luo
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Yang Ding
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Xujie Lü
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
| |
Collapse
|
9
|
Li X, Liu Z, Gao A, Zhang Q, Zhong H, Meng F, Lin T, Wang S, Su D, Jin K, Ge C, Gu L. Ferroelastically protected reversible orthorhombic to monoclinic-like phase transition in ZrO 2 nanocrystals. NATURE MATERIALS 2024; 23:1077-1084. [PMID: 38589541 DOI: 10.1038/s41563-024-01853-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Accepted: 03/07/2024] [Indexed: 04/10/2024]
Abstract
Robust ferroelectricity in nanoscale fluorite oxide-based thin films enables promising applications in silicon-compatible non-volatile memories and logic devices. However, the polar orthorhombic (O) phase of fluorite oxides is a metastable phase that is prone to transforming into the ground-state non-polar monoclinic (M) phase, leading to macroscopic ferroelectric degradation. Here we investigate the reversibility of the O-M phase transition in ZrO2 nanocrystals via in situ visualization of the martensitic transformation at the atomic scale. We reveal that the reversible shear deformation pathway from the O phase to the monoclinic-like (M') state, a compressive-strained M phase, is protected by 90° ferroelectric-ferroelastic switching. Nevertheless, as the M' state gradually accumulates localized strain, a critical tensile strain can pin the ferroelastic domain, resulting in an irreversible M'-M strain relaxation and the loss of ferroelectricity. These findings demonstrate the key role of ferroelastic switching in the reversibility of phase transition and also provide a tensile-strain threshold for stabilizing the metastable ferroelectric phase in fluorite oxide thin films.
Collapse
Affiliation(s)
- Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Ang Gao
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Fanqi Meng
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Shiyu Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Dong Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, China.
| |
Collapse
|
10
|
Sha T, Zhang X, Zhou R, Du G, Xiong Y, Pan Q, Yao J, Feng Z, Gao X, You Y. Organic-Inorganic Hybrid Perovskite Ferroelectric Nanosheets Synthesized by a Room-Temperature Antisolvent Method. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400636. [PMID: 38778554 PMCID: PMC11304249 DOI: 10.1002/advs.202400636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2024] [Revised: 04/17/2024] [Indexed: 05/25/2024]
Abstract
Over the past years, the application potential of ferroelectric nanomaterials with unique physical properties for modern electronics is highlighted to a large extent. However, it is relatively challenging to fabricate inorganic ferroelectric nanomaterials, which is a process depending on a vacuum atmosphere at high temperatures. As significant complements to inorganic ferroelectric nanomaterials, the nanomaterials of molecular ferroelectrics are rarely reported. Here a low-cost room-temperature antisolvent method is used to synthesize free-standing 2D organic-inorganic hybrid perovskite (OIHP) ferroelectric nanosheets (NSs), that is, (CHA)2PbBr4 NSs (CHA = cyclohexylammonium), with an average lateral size of 357.59 nm and a thickness ranging from 10 to 70 nm. This method shows high repeatability and produces NSs with excellent crystallinity. Moreover, ferroelectric domains in single NSs can be clearly visualized and manipulated using piezoresponse force microscopy (PFM). The domain switching and PFM-switching spectroscopy indicate the robust in-plane ferroelectricity of the NSs. This work not only introduces a feasible, low-cost, and scalable method for preparing molecular ferroelectric NSs but also promotes the research on molecular ferroelectric nanomaterials.
Collapse
Affiliation(s)
- Tai‐Ting Sha
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189P. R. China
| | - Xing‐Chen Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced MaterialsSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006P. R. China
| | - Ru‐Jie Zhou
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189P. R. China
| | - Guo‐Wei Du
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189P. R. China
| | - Yu‐An Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189P. R. China
| | - Qiang Pan
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189P. R. China
| | - Jie Yao
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189P. R. China
| | - Zi‐Jie Feng
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189P. R. China
| | - Xing‐Sen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced MaterialsSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006P. R. China
| | - Yu‐Meng You
- Jiangsu Key Laboratory for Science and Applications of Molecular FerroelectricsSoutheast UniversityNanjing211189P. R. China
| |
Collapse
|
11
|
Du S, Yang W, Gao H, Dong W, Xu B, Watanabe K, Taniguchi T, Zhao J, Zheng F, Zhou J, Zheng S. Sliding Memristor in Parallel-Stacked Hexagonal Boron Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404177. [PMID: 38973224 DOI: 10.1002/adma.202404177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 06/04/2024] [Indexed: 07/09/2024]
Abstract
Sliding ferroelectricity in 2D materials, arising from interlayer sliding-induced interlayer hybridization and charge redistribution at the van der Waals interface, offers a means to manipulate spontaneous polarization at the atomic scale through various methods such as stacking order, interfacial contact, and electric field. However, the practical application of extending 2D sliding ferroelectricity remains challenging due to the contentious mechanisms and the complex device structures required for ferroelectric switching. Here, a sliding memristor based on a graphene/parallel-stacked hexagonal boron nitride/graphene tunneling device, featuring a stable memristive hysteresis induced by interfacial polarizations and barrier height modulations, is presented. As the tunneling current density increases, the memristive window broadens, achieving an on/off ratio of ≈103 and 2 order decrease of the trigger current density, attributed to the interlayer migration of positively charged boron ions and the formation of conductive filaments, as supported by the theoretical calculations. The findings open a path for exploring the sliding memristor via a tunneling device and bridge the gap between sliding ferroelectricity and memory applications.
Collapse
Affiliation(s)
- Shuang Du
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Wenqi Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Huiying Gao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Weikang Dong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Boyu Xu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Jing Zhao
- School of Mechatronical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Fawei Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| |
Collapse
|
12
|
Coffineau D, Gariépy N, Manchon B, Dawant R, Jaouad A, Grondin E, Ecoffey S, Alibart F, Beilliard Y, Ruediger A, Drouin D. CMOS-compatible Hf 0.5Zr 0.5O 2-based ferroelectric memory crosspoints fabricated with damascene process. NANOTECHNOLOGY 2024; 35:425701. [PMID: 39019047 DOI: 10.1088/1361-6528/ad644f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 07/17/2024] [Indexed: 07/19/2024]
Abstract
We report the fabrication of Hf0.5Zr0.5O2(HZO) based ferroelectric memory crosspoints using a complementary metal-oxide-semiconductor-compatible damascene process. In this work, we compared 12 and 56µm2crosspoint devices with the 0.02 mm2round devices commonly used as a benchmark. For all devices, a 9 nm thick ferroelectric thin film was deposited by plasma-enhanced atomic layer deposition on planarized bottom electrodes. The wake-up appeared to be longer for the crosspoint memories compared to 0.02 mm2benchmark, while all the devices reached a 2Prvalue of ∼50µC cm-2after 105cycles with 3 V/10µs squared pulses. The crosspoints stand out for their superior endurance, which was increased by an order of magnitude. Nucleation limited switching experiments were performed, revealing a switching time <170 ns for our 12 and 56µm2devices, while it remained in theµs range for the larger round devices. The downscaled devices demonstrate notable advantages with a rise in endurance and switching speed.
Collapse
Affiliation(s)
- Dorian Coffineau
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Nicolas Gariépy
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Benoit Manchon
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
- Univ Lyon, INSA Lyon, ECL, CNRS, UCBL, CPE Lyon, INL, UMR5270, 69621 Villeurbanne, France
| | - Raphaël Dawant
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Abdelatif Jaouad
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Etienne Grondin
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Serge Ecoffey
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Fabien Alibart
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Yann Beilliard
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| | - Andreas Ruediger
- Institut National de la Recherche Scientifique (INRS), centre Énergie, Matériaux, Télécommunications, Varennes, Québec J3X 1S2, Canada
| | - Dominique Drouin
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, J1K 0A5 Sherbrooke, Québec, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, J1K 0A5 Sherbrooke, Québec, Canada
| |
Collapse
|
13
|
Shi S, Cao T, Xi H, Niu J, Jing X, Su H, Yu X, Yang P, Wu Y, Yan X, Tian H, Tsymbal EY, Chen J. Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer. PHYSICAL REVIEW LETTERS 2024; 133:036202. [PMID: 39094151 DOI: 10.1103/physrevlett.133.036202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Revised: 04/08/2024] [Accepted: 06/06/2024] [Indexed: 08/04/2024]
Abstract
Ferroelectric hafnia-based thin films have attracted significant interest due to their compatibility with complementary metal-oxide-semiconductor technology (CMOS). Achieving and stabilizing the metastable ferroelectric phase in these films is crucial for their application in ferroelectric devices. Recent research efforts have concentrated on the stabilization of the ferroelectric phase in hafnia-based films and delving into the mechanisms responsible for this stability. In this study, we experimentally demonstrate that stabilization of the ferroelectric phase in Hf_{0.5}Zr_{0.5}O_{2} (HZO) can be controlled by the interfacial charge transfer and the associated hole doping of HZO. Using the meticulously engineered charge transfer between an La_{1-x}Sr_{x}MnO_{3} buffer layer with variable Sr concentration x and an HZO film, we find the optimal x=0.33 that provides the required hole doping of HZO to most efficiently stabilize its ferroelectric phase. Our theoretical modeling reveals that the competition of the hole distribution between the threefold and fourfold coordinated oxygen sites in HZO controls the enhancement or reduction of the ferroelectric phase. Our findings offer a novel strategy to stabilize the ferroelectric phase of hafnia-based films and provide new insights into the development of ferroelectric devices compatible with CMOS.
Collapse
Affiliation(s)
| | | | - Haolong Xi
- School of Materials and Energy, Electron Microscopy Centre of Lanzhou University and Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | | | | | | | | | | | | | | | - He Tian
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | | | | |
Collapse
|
14
|
Zhang C, Zhang S, Cui P, Zhang Z. Tunable Multistate Ferroelectricity of Unit-Cell-Thick BaTiO 3 Revived by a Ferroelectric SnS Monolayer via Interfacial Sliding. NANO LETTERS 2024; 24:8664-8670. [PMID: 38967611 DOI: 10.1021/acs.nanolett.4c02041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2024]
Abstract
Stabilization of multiple polarization states at the atomic scale is pivotal for realizing high-density memory devices beyond prevailing bistable ferroelectric architectures. Here, we show that two-dimensional ferroelectric SnS or GeSe is able to revive and stabilize the ferroelectric order of three-dimensional ferroelectric BaTiO3, even when the latter is thinned to one unit cell in thickness. The underlying mechanism for overcoming the conventional detrimental critical thickness effect is attributed to facile interfacial inversion symmetry breaking by robust in-plane polarization of SnS or GeSe. Furthermore, when invoking interlayer sliding, we can stabilize multiple polarization states and achieve efficient interstate switching in the heterostructures, accompanied by dynamical ferroelectric skyrmionic excitations. When invoking sliding and twisting, the moiré domains exhibit nontrivial polar vortexes, which can be laterally displaced via different sliding schemes. These findings provide an intuitive avenue for simultaneously overcoming the standing critical thickness issue in bulk ferroelectrics and weak polarization issue in sliding ferroelectricity.
Collapse
Affiliation(s)
- Chuanbao Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Shunhong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| |
Collapse
|
15
|
Chan HL, Fields SS, Chen Y, O’Neill TP, Lenox MK, Hubbard WA, Ihlefeld JF, Regan BC. Mapping Ferroelectric Fields Reveals the Origins of the Coercivity Distribution. ACS NANO 2024; 18:20380-20388. [PMID: 39017620 PMCID: PMC11308779 DOI: 10.1021/acsnano.4c04526] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2024] [Revised: 06/28/2024] [Accepted: 07/01/2024] [Indexed: 07/18/2024]
Abstract
Better techniques for imaging ferroelectric polarization would aid the development of new ferroelectrics and the refinement of old ones. Here we show how scanning transmission electron microscope (STEM) electron beam-induced current (EBIC) imaging reveals ferroelectric polarization with obvious, simply interpretable contrast. Planar imaging of an entire ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) capacitor shows an EBIC response that is linearly related to the polarization determined in situ with the positive-up, negative-down (PUND) method. The contrast is easily calibrated in MV/cm. The underlying mechanism is magnification-independent, operating equally well on micrometer-sized devices and individual nanoscale domains. Coercive-field mapping reveals that individual domains are biased "positive" and "negative", as opposed to being "easy" and "hard" to switch. The remanent background E-fields generating this bias can be isolated and mapped. Coupled with STEM's native capabilities for structural identification, STEM EBIC imaging provides a revolutionary tool for characterizing ferroelectric materials and devices.
Collapse
Affiliation(s)
- Ho Leung Chan
- Department
of Physics and Astronomy, University of
California, Los Angeles, California 90095, United States
- California
NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Shelby S. Fields
- Department
of Materials Science and Engineering, University
of Virginia, Charlottesville, Virginia 22904, United States
| | - Yueyun Chen
- Department
of Physics and Astronomy, University of
California, Los Angeles, California 90095, United States
- California
NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Tristan P. O’Neill
- Department
of Physics and Astronomy, University of
California, Los Angeles, California 90095, United States
- California
NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Megan K. Lenox
- Department
of Materials Science and Engineering, University
of Virginia, Charlottesville, Virginia 22904, United States
| | - William A. Hubbard
- NanoElectronic
Imaging, Inc., Los Angeles, California 90095, United States
| | - Jon F. Ihlefeld
- Department
of Materials Science and Engineering, University
of Virginia, Charlottesville, Virginia 22904, United States
- Charles
L. Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Brian C. Regan
- Department
of Physics and Astronomy, University of
California, Los Angeles, California 90095, United States
- California
NanoSystems Institute, University of California, Los Angeles, California 90095, United States
- NanoElectronic
Imaging, Inc., Los Angeles, California 90095, United States
| |
Collapse
|
16
|
Huang F, Saini B, Wan L, Lu H, He X, Qin S, Tsai W, Gruverman A, Meng AC, Wong HSP, McIntyre PC, Wong S. Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects. ACS NANO 2024; 18:17600-17610. [PMID: 38916257 DOI: 10.1021/acsnano.4c01992] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/26/2024]
Abstract
Hafnia-based ferroelectric (FE) thin films are promising candidates for semiconductor memories. However, a fundamental challenge that persists is the lack of understanding regarding dimensional scaling, including thickness scaling and area scaling, of the functional properties and their heterogeneity in these films. In this work, excellent ferroelectricity and switching endurance are demonstrated in 4 nm-thick Hf0.5Zr0.5O2 (HZO) capacitors with molybdenum electrodes in capacitors as small as 65 nm × 45 nm in size. The HZO layer in these capacitors can be crystallized into the ferroelectric orthorhombic phase at the low temperature of 400 °C, making them compatible for back-end-of-line (BEOL) FE memories. With the benefits of thickness scaling, low operation voltage (1.2 V) is achieved with high endurance (>1010 cycles); however, a significant fatigue regime is noted. We observed that the bottom electrode, rather than the top electrode, plays a dominant role in the thickness scaling of HZO ferroelectric behavior. Furthermore, ultrahigh switched polarization (remanent polarization 2Pr ∼ 108 μC cm-2) is observed in some nanoscale devices. This study advances the understanding of dimensional scaling effects in HZO capacitors for high-performance FE memories.
Collapse
Affiliation(s)
- Fei Huang
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Balreen Saini
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Lei Wan
- Western Digital, San Jose, California 94305, United States
| | - Haidong Lu
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Xiaoqing He
- Electron Microscopy Core Facility and Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211, United States
| | - Shengjun Qin
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Wilman Tsai
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Andrew C Meng
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - H-S Philip Wong
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Paul C McIntyre
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Simon Wong
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| |
Collapse
|
17
|
Kim IJ, Choi J, Lee JS. Exploring Disturb Characteristics in 2D and 3D Ferroelectric NAND Memory Arrays for Next-Generation Memory Technology. ACS APPLIED MATERIALS & INTERFACES 2024; 16:33763-33770. [PMID: 38899561 DOI: 10.1021/acsami.4c03785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
Ferroelectric transistors are considered promising for next-generation 3D NAND technology due to their lower power consumption and faster operation compared to conventional charge-trap flash memories. However, ensuring their suitability for such applications requires a thorough investigation of array-scale reliability. This study specifically examines the suitability of hafnia-based ferroelectric transistors for advanced 3D NAND applications, with a specific focus on establishing a disturb-free voltage scheme to ensure the reliability of ferroelectric transistors within the array. Our key finding highlights the crucial role of optimal pass voltage in achieving disturb-free operation in both 2D and 3D ferroelectric NAND arrays. Additionally, the study indicates that read disturb remains negligible when an appropriate read voltage is applied. These insights provide a practical strategy for achieving reliable operation in 2D and 3D ferroelectric NAND, highlighting the potential of hafnia-based ferroelectric materials to meet the evolving requirements of high-density and reliable NAND flash memory applications.
Collapse
Affiliation(s)
- Ik-Jyae Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Jiwoung Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| |
Collapse
|
18
|
Ghasemian MB, Zavabeti A, Allioux FM, Sharma P, Mousavi M, Rahim MA, Khayyam Nekouei R, Tang J, Christofferson AJ, Meftahi N, Rafiezadeh S, Cheong S, Koshy P, Tilley RD, McConville CF, Russo SP, Ton-That C, Seidel J, Kalantar-Zadeh K. Liquid Metal Doping Induced Asymmetry in Two-Dimensional Metal Oxides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309924. [PMID: 38263808 DOI: 10.1002/smll.202309924] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 01/09/2024] [Indexed: 01/25/2024]
Abstract
The emergence of ferroelectricity in two-dimensional (2D) metal oxides is a topic of significant technological interest; however, many 2D metal oxides lack intrinsic ferroelectric properties. Therefore, introducing asymmetry provides access to a broader range of 2D materials within the ferroelectric family. Here, the generation of asymmetry in 2D SnO by doping the material with Hf0.5Zr0.5O2 (HZO) is demonstrated. A liquid metal process as a doping strategy for the preparation of 2D HZO-doped SnO with robust ferroelectric characteristics is implemented. This technology takes advantage of the selective interface enrichment of molten Sn with HZO crystallites. Molecular dynamics simulations indicate a strong tendency of Hf and Zr atoms to migrate toward the surface of liquid metal and embed themselves within the growing oxide layer in the form of HZO. Thus, the liquid metal-based harvesting/doping technique is a feasible approach devised for producing novel 2D metal oxides with induced ferroelectric properties, represents a significant development for the prospects of random-access memories.
Collapse
Affiliation(s)
- Mohammad B Ghasemian
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Ali Zavabeti
- Department of Chemical Engineering, The University of Melbourne, Parkville, VIC, 3010, Australia
- School of Science, RMIT University, Melbourne, VIC, 3000, Australia
| | - Francois-Marie Allioux
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Pankaj Sharma
- ARC Center of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
- College of Science and Engineering, Flinders University, Bedford Park, Adelaide, SA, 5042, Australia
- Flinders Institute for Nanoscale Science and Technology, Flinders University, Adelaide, SA, 5042, Australia
| | - Maedehsadat Mousavi
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Md Arifur Rahim
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Rasoul Khayyam Nekouei
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Jianbo Tang
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Andrew J Christofferson
- School of Science, RMIT University, Melbourne, VIC, 3000, Australia
- ARC Center of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Nastaran Meftahi
- ARC Center of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Somayeh Rafiezadeh
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Soshan Cheong
- Mark Wainwright Analytical Centre, Electron Microscope Unit, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Pramod Koshy
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Richard D Tilley
- Mark Wainwright Analytical Centre, Electron Microscope Unit, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
- School of Chemistry and Australian Centre for NanoMedicine, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Chris F McConville
- School of Science, RMIT University, Melbourne, VIC, 3000, Australia
- Institute for Frontier Materials, Deakin University, Geelong, Victoria, 3216, Australia
| | - Salvy P Russo
- ARC Center of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Cuong Ton-That
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Jan Seidel
- ARC Center of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Kourosh Kalantar-Zadeh
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| |
Collapse
|
19
|
Shen Y, Ooe K, Yuan X, Yamada T, Kobayashi S, Haruta M, Kan D, Shimakawa Y. Ferroelectric freestanding hafnia membranes with metastable rhombohedral structure down to 1-nm-thick. Nat Commun 2024; 15:4789. [PMID: 38918364 PMCID: PMC11199652 DOI: 10.1038/s41467-024-49055-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2024] [Accepted: 05/23/2024] [Indexed: 06/27/2024] Open
Abstract
Two-dimensional freestanding membranes of materials, which can be transferred onto and make interfaces with any material, have attracted attention in the search for functional properties that can be utilized for next-generation nanoscale devices. We fabricated stable 1-nm-thick hafnia membranes exhibiting the metastable rhombohedral structure and out-of-plane ferroelectric polarizations as large as 13 μC/cm2. We also found that the rhombohedral phase transforms into another metastable orthorhombic phase without the ferroelectricity deteriorating as the thickness increases. Our results reveal the key role of the rhombohedral phase in the scale-free ferroelectricity in hafnia and also provide critical insights into the formation mechanism and phase stability of the metastable hafnia. Moreover, ultrathin hafnia membranes enable heterointerfaces and devices to be fabricated from structurally dissimilar materials beyond structural constrictions in conventional film-growth techniques.
Collapse
Affiliation(s)
- Yufan Shen
- Institute for Chemical Research, Kyoto University, Uji, Kyoto, Japan
| | - Kousuke Ooe
- Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya, Japan
| | - Xueyou Yuan
- Department of Energy Engineering, Nagoya University, Nagoya, Japan
| | - Tomoaki Yamada
- Department of Energy Engineering, Nagoya University, Nagoya, Japan
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama, Japan
| | - Shunsuke Kobayashi
- Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya, Japan
| | - Mitsutaka Haruta
- Institute for Chemical Research, Kyoto University, Uji, Kyoto, Japan
| | - Daisuke Kan
- Institute for Chemical Research, Kyoto University, Uji, Kyoto, Japan.
| | - Yuichi Shimakawa
- Institute for Chemical Research, Kyoto University, Uji, Kyoto, Japan
| |
Collapse
|
20
|
Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
Collapse
Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
| |
Collapse
|
21
|
Kim IJ, Lee JS. Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors. SCIENCE ADVANCES 2024; 10:eadn1345. [PMID: 38848373 PMCID: PMC11160465 DOI: 10.1126/sciadv.adn1345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 05/06/2024] [Indexed: 06/09/2024]
Abstract
Ferroelectric transistors based on hafnia-based ferroelectrics exhibit tremendous potential as next-generation memories owing to their high-speed operation and low power consumption. Nevertheless, these transistors face limitations in terms of memory window, which directly affects their ability to support multilevel characteristics in memory devices. Furthermore, the absence of an efficient operational technique capable of achieving multilevel characteristics has hindered their development. To address these challenges, we present a gate stack engineering method and an efficient operational approach for ferroelectric transistors to achieve 16-level data per cell operation. By using the suggested engineering method, we demonstrate the attainment of a substantial memory window of 10 V without increasing the device area. Additionally, we propose a displacement current control method, facilitating one-shot programming to the desired state. Remarkably, we suggest the compatibility of these proposed methods with three-dimensional (3D) structures. This study underscores the potential of ferroelectric transistors for next-generation 3D memory applications.
Collapse
Affiliation(s)
- Ik-Jyae Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | | |
Collapse
|
22
|
Zhang X, Cheng M, Dai J, Yang Q, Zhang Y, Dong B, Tao X, Zou J, Jin Z, Liu F, Wu Z, Hu X, Zheng Z, Shi Z, Jiang S, Zhang L, Yang T, Zhang X, Zhou L. Scalable Synthesis of High-Quality Ultrathin Ferroelectric Magnesium Molybdenum Oxide. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308550. [PMID: 38478729 DOI: 10.1002/adma.202308550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2023] [Revised: 02/15/2024] [Indexed: 03/20/2024]
Abstract
The development of ultrathin, stable ferroelectric materials is crucial for advancing high-density, low-power electronic devices. Nonetheless, ultrathin ferroelectric materials are rare due to the critical size effect. Here, a novel ferroelectric material, magnesium molybdenum oxide (Mg2Mo3O8) is presented. High-quality ultrathin Mg2Mo3O8 crystals are synthesized using chemical vapor deposition (CVD). Ultrathin Mg2Mo3O8 has a wide bandgap (≈4.4 eV) and nonlinear optical response. Mg2Mo3O8 crystals of varying thicknesses exhibit out-of-plane ferroelectric properties at room temperature, with ferroelectricity retained even at a 2 nm thickness. The Mg2Mo3O8 exhibits a relatively large remanent polarization ranging from 33 to 52 µC cm- 2, which is tunable by changing its thickness. Notably, Mg2Mo3O8 possesses a high Curie temperature (>980 °C) across various thicknesses. Moreover, the as-grown Mg2Mo3O8 crystals display remarkable stability under harsh environments. This work introduces nolanites-type crystal into ultrathin ferroelectrics. The scalable synthesis of stable ultrathin ferroelectric Mg2Mo3O8 expands the scope of ferroelectric materials and may prosper applications of ferroelectrics.
Collapse
Affiliation(s)
- Xingxing Zhang
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Mo Cheng
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jiuxiang Dai
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Qianqian Yang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, China
| | - Ye Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, China and School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Baojuan Dong
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
| | - Xinwei Tao
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jingyi Zou
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Zhitong Jin
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Feng Liu
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhenghan Wu
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xianyu Hu
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zemin Zheng
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhiwen Shi
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Shengwei Jiang
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Linxing Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, China
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, China and School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Xu Zhang
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Lin Zhou
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| |
Collapse
|
23
|
Lee K, Park K, Choi IH, Cho JW, Song MS, Kim CH, Lee JH, Lee JS, Park J, Chae SC. Deterministic Orientation Control of Ferroelectric HfO 2 Thin Film Growth by a Topotactic Phase Transition of an Oxide Electrode. ACS NANO 2024; 18:12707-12715. [PMID: 38733336 DOI: 10.1021/acsnano.3c07410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2024]
Abstract
The scale-free ferroelectricity with superior Si compatibility of HfO2 has reawakened the feasibility of scaled-down nonvolatile devices and beyond the complementary metal-oxide-semiconductor (CMOS) architecture based on ferroelectric materials. However, despite the rapid development, fundamental understanding, and control of the metastable ferroelectric phase in terms of oxygen ion movement of HfO2 remain ambiguous. In this study, we have deterministically controlled the orientation of a single-crystalline ferroelectric phase HfO2 thin film via oxygen ion movement. We induced a topotactic phase transition of the metal electrode accompanied by the stabilization of the differently oriented ferroelectric phase HfO2 through the migration of oxygen ions between the oxygen-reactive metal electrode and the HfO2 layer. By stabilizing different polarization directions of HfO2 through oxygen ion migration, we can gain a profound understanding of the oxygen ion-relevant unclear phenomena of ferroelectric HfO2.
Collapse
Affiliation(s)
- Kyoungjun Lee
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| | - Kunwoo Park
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Korea
| | - In Hyeok Choi
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
| | - Jung Woo Cho
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| | - Myeong Seop Song
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| | - Chang Hoon Kim
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Jun Hee Lee
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Jong Seok Lee
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
| | - Jungwon Park
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Korea
| | - Seung Chul Chae
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| |
Collapse
|
24
|
Jayakrishnan AR, Kim JS, Hellenbrand M, Marques LS, MacManus-Driscoll JL, Silva JPB. Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices. MATERIALS HORIZONS 2024; 11:2355-2371. [PMID: 38477152 PMCID: PMC11104485 DOI: 10.1039/d4mh00153b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 02/27/2024] [Indexed: 03/14/2024]
Abstract
Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumption and high power efficiency, and important properties being aimed for are reliable switching at high speed, excellent endurance, retention, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Binary or doped binary materials have emerged over conventional complex-composition ferroelectrics as an optimum solution, particularly in terms of CMOS compatibility. The current state-of-the-art route to achieving superlative ferroelectric performance of binary oxides is to induce ferroelectricity at the nanoscale, e.g., in ultra-thin films of doped HfO2, ZrO2, Zn1-xMgxO, Al-xScxN, and Bi1-xSmxO3. This short review article focuses on the materials science of emerging new ferroelectric materials, including their different properties such as remanent polarization, coercive field, endurance, etc. The potential of these materials is discussed for neuromorphic applications.
Collapse
Affiliation(s)
- Ampattu R Jayakrishnan
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Ji S Kim
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - Markus Hellenbrand
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - Luís S Marques
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Judith L MacManus-Driscoll
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - José P B Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| |
Collapse
|
25
|
Baucom G, Hershkovitz E, Chojecki P, Nishida T, Tabrizian R, Kim H. Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D-STEM and Automated Diffraction Indexing. SMALL METHODS 2024:e2400395. [PMID: 38754074 DOI: 10.1002/smtd.202400395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Revised: 05/01/2024] [Indexed: 05/18/2024]
Abstract
Ferroelectric hafnium zirconium oxide (HZO) holds promise for nextgeneration memory and transistors due to its superior scalability and seamless integration with complementary metal-oxide-semiconductor processing. A major challenge in developing this emerging ferroelectric material is the metastable nature of the non-centrosymmetric polar phase responsible for ferroelectricity, resulting in a coexistence of both polar and non-polar phases with uneven grain sizes and random orientations. Due to the structural similarity between the multiple phases and the nanoscale dimensions of the thin film devices, accurate measurement of phase-specific information remains challenging. Here, the application of 4D scanning transmission electron microscopy is demonstrated with automated electron diffraction pattern indexing to analyze multiphase polycrystalline HZO thin films, enabling the characterization of crystallographic phase and orientation across large working areas on the order of hundreds of nanometers. This approach offers a powerful characterization framework to produce a quantitative and statistically robust analysis of the intricate structure of HZO films by uncovering phase composition, polarization axis alignment, and unique phase distribution within the HZO film. This study introduces a novel approach for analyzing ferroelectric HZO, facilitating reliable characterization of process-structure-property relationships imperative to accelerating the growth optimization, performance, and successful implementation of ferroelectric HZO in devices.
Collapse
Affiliation(s)
- Garrett Baucom
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Eitan Hershkovitz
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Paul Chojecki
- Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Toshikazu Nishida
- Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Roozbeh Tabrizian
- Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Honggyu Kim
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
| |
Collapse
|
26
|
Cheema SS, Shanker N, Hsu SL, Schaadt J, Ellis NM, Cook M, Rastogi R, Pilawa-Podgurski RCN, Ciston J, Mohamed M, Salahuddin S. Giant energy storage and power density negative capacitance superlattices. Nature 2024; 629:803-809. [PMID: 38593860 DOI: 10.1038/s41586-024-07365-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Accepted: 03/29/2024] [Indexed: 04/11/2024]
Abstract
Dielectric electrostatic capacitors1, because of their ultrafast charge-discharge, are desirable for high-power energy storage applications. Along with ultrafast operation, on-chip integration can enable miniaturized energy storage devices for emerging autonomous microelectronics and microsystems2-5. Moreover, state-of-the-art miniaturized electrochemical energy storage systems-microsupercapacitors and microbatteries-currently face safety, packaging, materials and microfabrication challenges preventing on-chip technological readiness2,3,6, leaving an opportunity for electrostatic microcapacitors. Here we report record-high electrostatic energy storage density (ESD) and power density, to our knowledge, in HfO2-ZrO2-based thin film microcapacitors integrated into silicon, through a three-pronged approach. First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HfO2-ZrO2 films are engineered near a field-driven ferroelectric phase transition to exhibit amplified charge storage by the negative capacitance effect7-12, which enhances volumetric ESD beyond the best-known back-end-of-the-line-compatible dielectrics (115 J cm-3) (ref. 13). Second, to increase total energy storage, antiferroelectric superlattice engineering14 scales the energy storage performance beyond the conventional thickness limitations of HfO2-ZrO2-based (anti)ferroelectricity15 (100-nm regime). Third, to increase the storage per footprint, the superlattices are conformally integrated into three-dimensional capacitors, which boosts the areal ESD nine times and the areal power density 170 times that of the best-known electrostatic capacitors: 80 mJ cm-2 and 300 kW cm-2, respectively. This simultaneous demonstration of ultrahigh energy density and power density overcomes the traditional capacity-speed trade-off across the electrostatic-electrochemical energy storage hierarchy1,16. Furthermore, the integration of ultrahigh-density and ultrafast-charging thin films within a back-end-of-the-line-compatible process enables monolithic integration of on-chip microcapacitors5, which can unlock substantial energy storage and power delivery performance for electronic microsystems17-19.
Collapse
Affiliation(s)
- Suraj S Cheema
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Nirmaan Shanker
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Shang-Lin Hsu
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Joseph Schaadt
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
- Department of Mechanical Engineering, University of California, Berkeley, CA, USA
| | - Nathan M Ellis
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Matthew Cook
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Ravi Rastogi
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | | | - Jim Ciston
- National Center for Electron Microscopy Facility, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Mohamed Mohamed
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Sayeef Salahuddin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| |
Collapse
|
27
|
Li L, Xiang H, Zheng H, Chien YC, Duong NT, Gao J, Ang KW. Physical reservoirs based on MoS 2-HZO integrated ferroelectric field-effect transistors for reservoir computing systems. NANOSCALE HORIZONS 2024; 9:752-763. [PMID: 38465422 DOI: 10.1039/d3nh00524k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/12/2024]
Abstract
Reservoir computing (RC), a variant of recurrent neural networks (RNNs), is well-known for its reduced energy consumption through exclusive focus on training the output weight and its superior performance in handling spatiotemporal information. Implementing these networks in hardware requires devices with superior fading memory behavior. Unlike filament-based two-terminal devices, those relying on ferroelectric switching demonstrate improved voltage reliability, while three-terminal transistors provide additional active control. HfO2-based ferroelectric materials such as Hf0.5Zr0.5O2 (HZO), have garnered attention for their scalability and seamless integration with CMOS technology. This study implements a RC hardware based on MoS2-HZO integrated device structure with enhanced spontaneous polarization field. By adjusting the oxygen vacancy concentration, the devices exhibit consistent responses to both identical and nonidentical voltages, making them suitable for diverse RC applications. The high accuracy of MNIST handwritten digits recognition highlights the rich reservoir states of the traditional RC architecture. Additionally, the impact of masks on RC implementation is assessed, showcasing the device's capability for spatiotemporal signal analysis. This development paves the way for implementing energy-efficient and high-performance computing solutions.
Collapse
Affiliation(s)
- Lingqi Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583.
| | - Heng Xiang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583.
| | - Haofei Zheng
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583.
| | - Yu-Chieh Chien
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583.
| | - Ngoc Thanh Duong
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583.
| | - Jing Gao
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583.
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583.
| |
Collapse
|
28
|
Zhou C, Ma L, Feng Y, Kuo CY, Ku YC, Liu CE, Cheng X, Li J, Si Y, Huang H, Huang Y, Zhao H, Chang CF, Das S, Liu S, Chen Z. Enhanced polarization switching characteristics of HfO 2 ultrathin films via acceptor-donor co-doping. Nat Commun 2024; 15:2893. [PMID: 38570498 PMCID: PMC10991407 DOI: 10.1038/s41467-024-47194-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Accepted: 03/22/2024] [Indexed: 04/05/2024] Open
Abstract
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.
Collapse
Affiliation(s)
- Chao Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Liyang Ma
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China
| | - Yanpeng Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Chang-Yang Kuo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Yu-Chieh Ku
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Cheng-En Liu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Xianlong Cheng
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Jingxuan Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Yangyang Si
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Haoliang Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yan Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Hongjian Zhao
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Chun-Fu Chang
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany
| | - Sujit Das
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China.
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China.
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China.
| |
Collapse
|
29
|
Wang H, Guan Z, Li J, Luo Z, Du X, Wang Z, Zhao H, Shen S, Yin Y, Li X. Silicon-Compatible Ferroelectric Tunnel Junctions with a SiO 2/Hf 0.5Zr 0.5O 2 Composite Barrier as Low-Voltage and Ultra-High-Speed Memristors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2211305. [PMID: 38291852 DOI: 10.1002/adma.202211305] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Revised: 12/19/2023] [Indexed: 02/01/2024]
Abstract
The big data era requires ultrafast, low-power, and silicon-compatible materials and devices for information storage and processing. Here, ferroelectric tunnel junctions (FTJs) based on SiO2/Hf0.5Zr0.5O2 composite barrier and both conducting electrodes are designed and fabricated on Si substrates. The FTJ achieves the fastest write speed of 500 ps under 5 V (2 orders of magnitude faster than reported silicon-compatible FTJs) or 10 ns speed at a low voltage of 1.5 V (the lowest voltage among FTJs at similar speeds), low write current density of 1.3 × 104 A cm-2, 8 discrete states, good retention > 105 s at 85 °C, and endurance > 107. In addition, it provides a large read current (88 A cm-2) at 0.1 V, 2 orders of magnitude larger than reported FTJs. Interestingly, in FTJ-based synapses, gradually tunable conductance states (128 states) with high linearity (<1) are obtained by 10 ns pulses of <1.2 V, and a high accuracy of 91.8% in recognizing fashion product images is achieved by online neural network simulations. These results highlight that silicon-compatible HfO2-based FTJs are promising for high-performance nonvolatile memories and electrical synapses.
Collapse
Affiliation(s)
- He Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zeyu Guan
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Jiachen Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zhen Luo
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Xinzhe Du
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zijian Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Haoyu Zhao
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Shengchun Shen
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yuewei Yin
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Xiaoguang Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| |
Collapse
|
30
|
Han G, Li XF, Berbille A, Zhang Y, Luo X, Liu L, Li L, Wang ZL, Zhu L. Enhanced Piezoelectricity of MAPbI 3 by the Introduction of MXene and Its Utilization in Boosting High-Performance Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313288. [PMID: 38537247 DOI: 10.1002/adma.202313288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Revised: 03/01/2024] [Indexed: 04/04/2024]
Abstract
Recently, perovskite photodetectors (PDs) are risen to prominence due to substantial research interest. Beyond merely tweaking the composition of materials, a cutting-edge advancement lies in leveraging the innate piezoelectric polarization properties of perovskites themselves. Here, the investigation shows utilizing Ti3C2Tx, a typical MXene, as an intermediate layer for significantly boosting the piezoelectric property of MAPbI3 thin films. This improvement is primarily attributed to the enhanced polarization of the methylammonium (MA+) groups within MAPbI3, induced by the OH groups present in Ti3C2Tx. A flexible PD based on the MAPbI3/MXene heterostructure is then fabricated. The new device is sensitive to a wide range of wavelengths, displays greatly enhanced performance owing to the piezo-phototronic coupling. Moreover, the device is endowed with a greatly reduced response time, down to millisecond level, through the pyro-phototronic effect. The characterization shows applying a -1.2% compressive strain on the PD leads to a remarkable 102% increase in the common photocurrent, and a 76% increase in the pyro-phototronic current. The present work reveals how the emerging piezo-phototronic and pyro-phototronic effects can be employed to design high-performance flexible perovskite PDs.
Collapse
Affiliation(s)
- Gaosi Han
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xiao-Fen Li
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Andy Berbille
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yueming Zhang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xiongxin Luo
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Lindong Liu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
| | - Longyi Li
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Yonsei Frontier Lab, Yonsei University, Seoul, 03722, Republic of Korea
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Laipan Zhu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| |
Collapse
|
31
|
Yang J, Xie Y, Zhu C, Chen S, Wei J, Liu Y, Chen M, Cao D. Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping. NANOTECHNOLOGY 2024; 35:235704. [PMID: 38430571 DOI: 10.1088/1361-6528/ad2f74] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Accepted: 03/01/2024] [Indexed: 03/04/2024]
Abstract
In recent times, there has been a notable surge of interests in hafnia (HfO2)-based ferroelectrics, primarily due to their remarkable ferroelectric properties employed in ultra-thin configurations, alongside their compatibility with the conventional CMOS manufacturing process. In order to harness the full potential of HfO2-based films for high-performance non-volatile memory applications, it is imperative to enhance their ferroelectric characteristics and durability. This study introduces a straightforward approach aimed at augmenting the ferroelectric performance of HfxZr1-xO2(HZO) films deposited on silicon (Si) substrates through the engineering of oxygen vacancies (VO). The results of this endeavor demonstrate a significant enhancement in ferroelectric performance, characterized by a 2Pr value of 47μC cm-2and impressive endurance, enduring up to 108cycles under an 8 MV cm-1electric field without the need of a wake-up process. This marked improvement can be attributed to a dual-pronged approach, involving the incorporation of an Al2O3interlayer and the introduction of Al atoms into the HZO film. The Al2O3interlayer primarily serves to mitigate the presence of oxygen vacancies at the interface, while the introduction of Al dopants elevates the concentration of oxygen vacancies within the bulk material. This modulation of oxygen vacancy concentration proves instrumental in facilitating the formation of a ferroelectric o-III phase within the HZO-based films, thereby further augmenting their ferroelectric performance. This innovative and effective strategy offers an alternative avenue for enhancing the ferroelectric properties of materials characterized by a fluorite crystal structure.
Collapse
Affiliation(s)
- Jianxing Yang
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 2015, 27, 18112013, People's Republic of China
| | - Yufang Xie
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 2015, 27, 18112013, People's Republic of China
| | - Chengyan Zhu
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 2015, 27, 18112013, People's Republic of China
| | - Sixue Chen
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 2015, 27, 18112013, People's Republic of China
| | - Jiajing Wei
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 2015, 27, 18112013, People's Republic of China
| | - Yuan Liu
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 2015, 27, 18112013, People's Republic of China
| | - Mingming Chen
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 2015, 27, 18112013, People's Republic of China
| | - Dawei Cao
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 2015, 27, 18112013, People's Republic of China
| |
Collapse
|
32
|
Shang H, Dong H, Wu Y, Deng F, Liang X, Hu S, Shen S. Mechanical Control of Polar Patterns in Wrinkled Thin Films via Flexoelectricity. PHYSICAL REVIEW LETTERS 2024; 132:116201. [PMID: 38563913 DOI: 10.1103/physrevlett.132.116201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Revised: 11/17/2023] [Accepted: 02/09/2024] [Indexed: 04/04/2024]
Abstract
Intriguing topological polar structures in oxide nanofilms have drawn growing attention owing to their immense potential applications in nanoscale electronic devices. Here, we report a novel route to mechanically manipulate polar structures via flexoelectricity in wrinkled thin films. Our results present a flexoelectric polar transition from a nonpolar state to uniaxial polar stripes, biaxial meronlike or antimeronlike polar structures, and polar labyrinths by varying wrinkle morphologies. The evolution mechanisms and the outstanding mechanical tunability of these flexoelectric polar patterns were investigated theoretically and numerically. This strategy based on flexoelectricity for generating nontrivial polar structures will no longer rely on the superlattice structure and can be widely applicable to all centrosymmetric or noncentrosymmetric materials, providing a broader range of material and structure candidates for polar topologies.
Collapse
Affiliation(s)
- Hongxing Shang
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Huiting Dong
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yihan Wu
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Feng Deng
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xu Liang
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shuling Hu
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shengping Shen
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| |
Collapse
|
33
|
Hwang J, Goh Y, Jeon S. Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel Junctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305271. [PMID: 37863823 DOI: 10.1002/smll.202305271] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2023] [Revised: 09/11/2023] [Indexed: 10/22/2023]
Abstract
The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of ferroelectricity in fluorite-structured oxides such as HfO2 and ZrO2 . In terms of thickness scaling, CMOS compatibility, and 3D integration, these fluorite-structured FTJs provide a number of benefits over conventional perovskite-based FTJs. Here, recent developments involving all FTJ devices with fluorite structures are examined. The transport mechanism of fluorite-structured FTJs is explored and contrasted with perovskite-based FTJs and other 2-terminal resistive switching devices starting with the operation principle and essential parameters of the tunneling electroresistance effect. The applications of FTJs, such as neuromorphic devices, logic-in-memory, and physically unclonable function, are then discussed, along with several structural approaches to fluorite-structure FTJs. Finally, the materials and device integration difficulties related to fluorite-structure FTJ devices are reviewed. The purpose of this review is to outline the theories, physics, fabrication processes, applications, and current difficulties associated with fluorite-structure FTJs while also describing potential future possibilities for optimization.
Collapse
Affiliation(s)
- Junghyeon Hwang
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Youngin Goh
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Sanghun Jeon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| |
Collapse
|
34
|
Yan F, Wu Y, Liu Y, Ai P, Liu S, Deng S, Xue KH, Fu Q, Dong W. Recent progress on defect-engineering in ferroelectric HfO 2: The next step forward via multiscale structural optimization. MATERIALS HORIZONS 2024; 11:626-645. [PMID: 38078479 DOI: 10.1039/d3mh01273e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
The discovery of unconventional scale-free ferroelectricity in HfO2-based fluorite thin films has attracted great attention in recent years for their promising applications in low-power logic and nonvolatile memories. The ferroelectricity of HfO2 is intrinsically originated from the widely accepted ferroelectric metastable orthorhombic Pca21 phase. In the last decade, defect-doping/solid solution has shown excellent prospects in enhancing and stabilizing the ferroelectricity via isovalent or aliovalent defect-engineering. Here, the recent advances in defect-engineered HfO2-based ferroelectrics are first reviewed, including progress in mono-ionic doping and mixed ion-doping. Then, the defect-lattice correlation, the point-defect promoted phase transition kinetics, and the interface-engineered dynamic behaviour of oxygen vacancy are summarized. In addition, thin film preparation and ion bombardment doping are summarized. Finally, the outlook and challenges are discussed. A multiscale structural optimization approach is suggested for further property optimization. This article not only covers an overview of the state-of-art advances of defects in fluorite ferroelectrics, but also future prospects that may inspire their further property-optimization via defect-engineering.
Collapse
Affiliation(s)
- Fengjun Yan
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yao Wu
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yilong Liu
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Pu Ai
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province & Department of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Kan-Hao Xue
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Qiuyun Fu
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518000, P. R. China
| | - Wen Dong
- School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China.
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518000, P. R. China
| |
Collapse
|
35
|
Liu J, Su L, Zhang X, Shtansky DV, Fang X. Ferroelectric-Optoelectronic Hybrid System for Photodetection. SMALL METHODS 2024; 8:e2300319. [PMID: 37312397 DOI: 10.1002/smtd.202300319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2023] [Revised: 04/28/2023] [Indexed: 06/15/2023]
Abstract
Photodetectors (PDs), as functional devices based on photon-to-electron conversion, are an indispensable component for the next-generation Internet of Things system. The research of advanced and efficient PDs that meet the diverse demands is becoming a major task. Ferroelectric materials can develop a unique spontaneous polarization due to the symmetry-breaking of the unit cell, which is switchable under an external electric field. Ferroelectric polarization field has the intrinsic characteristics of non-volatilization and rewritability. Introducing ferroelectrics to effectively manipulate the band bending and carrier transport can be non-destructive and controllable in the ferroelectric-optoelectronic hybrid systems. Hence, ferroelectric integration offers a promising strategy for high-performance photoelectric detection. This paper reviews the fundamentals of optoelectronic and ferroelectric materials, and their interactions in hybrid photodetection systems. The first section introduces the characteristics and applications of typical optoelectronic and ferroelectric materials. Then, the interplay mechanisms, modulation effects, and typical device structures of ferroelectric-optoelectronic hybrid systems are discussed. Finally, in summary and perspective section, the progress of ferroelectrics integrated PDs is summed up and the challenges of ferroelectrics in the field of optoelectronics are considered.
Collapse
Affiliation(s)
- Jie Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Xinglong Zhang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Dmitry V Shtansky
- National University of Science and Technology "MISIS", Moscow, 119049, Russia
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| |
Collapse
|
36
|
Shao M, Liu H, He R, Li X, Wu L, Ma J, Ye C, Hu X, Zhao R, Zhong Z, Yu Y, Wan C, Yang Y, Nan CW, Bai X, Ren TL, Renshaw Wang X. Programmable Ferroelectricity in Hf 0.5Zr 0.5O 2 Enabled by Oxygen Defect Engineering. NANO LETTERS 2024; 24:1231-1237. [PMID: 38251914 DOI: 10.1021/acs.nanolett.3c04104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
Ferroelectricity, especially the Si-compatible type recently observed in hafnia-based materials, is technologically useful for modern memory and logic applications, but it is challenging to differentiate intrinsic ferroelectric polarization from the polar phase and oxygen vacancy. Here, we report electrically controllable ferroelectricity in a Hf0.5Zr0.5O2-based heterostructure with Sr-doped LaMnO3, a mixed ionic-electronic conductor, as an electrode. Electrically reversible extraction and insertion of an oxygen vacancy into Hf0.5Zr0.5O2 are macroscopically characterized and atomically imaged in situ. Utilizing this reversible process, we achieved multilevel polarization states modulated by the electric field. Our study demonstrates the usefulness of the mixed conductor to repair, create, manipulate, and utilize advanced ferroelectric functionality. Furthermore, the programmed ferroelectric heterostructures with Si-compatible doped hafnia are desirable for the development of future ferroelectric electronics.
Collapse
Affiliation(s)
- Minghao Shao
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Houfang Liu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Ri He
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xiaomei Li
- School of Integrated Circuits, East China Normal University, Shanghai 200241, China
| | - Liang Wu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
| | - Ji Ma
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
| | - Chen Ye
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
| | - Xiangchen Hu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Ruiting Zhao
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Yi Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yi Yang
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Ce-Wen Nan
- School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - X Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
| |
Collapse
|
37
|
Song L, Zhao Y, Xu B, Du R, Li H, Feng W, Yang J, Li X, Liu Z, Wen X, Peng Y, Wang Y, Sun H, Huang L, Jiang Y, Cai Y, Jiang X, Shi J, He J. Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide. Nat Commun 2024; 15:721. [PMID: 38267426 PMCID: PMC10808545 DOI: 10.1038/s41467-024-44929-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 01/11/2024] [Indexed: 01/26/2024] Open
Abstract
Multiferroic materials offer a promising avenue for manipulating digital information by leveraging the cross-coupling between ferroelectric and ferromagnetic orders. Despite the ferroelectricity has been uncovered by ion displacement or interlayer-sliding, one-unit-cell of multiferroic materials design and wafer-scale synthesis have yet to be realized. Here we develope an interface modulated strategy to grow 1-inch one-unit-cell of non-layered chromium sulfide with unidirectional orientation on industry-compatible c-plane sapphire. The interfacial interaction between chromium sulfide and substrate induces the intralayer-sliding of self-intercalated chromium atoms and breaks the space reversal symmetry. As a result, robust room-temperature ferroelectricity (retaining more than one month) emerges in one-unit-cell of chromium sulfide with ultrahigh remanent polarization. Besides, long-range ferromagnetic order is discovered with the Curie temperature approaching 200 K, almost two times higher than that of bulk counterpart. In parallel, the magnetoelectric coupling is certified and which makes 1-inch one-unit-cell of chromium sulfide the largest and thinnest multiferroics.
Collapse
Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian, 116024, China
| | - Bingqian Xu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Zijia Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yao Cai
- The Institute of Technological Sciences, Wuhan University, 430072, Wuhan, China
| | - Xue Jiang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian, 116024, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China.
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
| |
Collapse
|
38
|
Cervasio R, Amzallag E, Verseils M, Hemme P, Brubach JB, Infante IC, Segantini G, Rojo Romeo P, Coati A, Vlad A, Garreau Y, Resta A, Vilquin B, Creuze J, Roy P. Quantification of Crystalline Phases in Hf 0.5Zr 0.5O 2 Thin Films through Complementary Infrared Spectroscopy and Ab Initio Supercell Simulations. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3829-3840. [PMID: 38214484 DOI: 10.1021/acsami.3c13848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
In the quest for thinner and more efficient ferroelectric devices, Hf0.5Zr0.5O2 (HZO) has emerged as a potential ultrathin and lead-free ferroelectric material. Indeed, when deposited on a TiN electrode, 1-25 nm thick HZO exhibits excellent ferroelectricity capability, allowing the prospective miniaturization of capacitors and transistor devices. To investigate the origin of ferroelectricity in HZO thin films, we conducted a far-infrared (FIR) spectroscopic study on 5 HZO films with thicknesses ranging from 10 to 52 nm, both within and out of the ferroelectric thickness range where ferroelectric properties are observed. Based on X-ray diffraction, these HZO films are estimated to contain various proportions of monoclinic (m-), tetragonal (t-), and polar orthorhombic (polar o-) phases, while only the 11, 17, and 21 nm thick are expected to include a higher amount of polar o-phase. We coupled the HZO infrared measurements with DFT simulations for these m-, t-, and polar o-crystallographic structures. The approach used was based on the supercell method, which combines all possible Hf/Zr mixed atomic sites in the solid solution. The excellent agreement between measured and simulated spectra allows assigning most bands and provides infrared signatures for the various HZO structures, including the polar orthorhombic form. Beyond pure assignment of bands, the DFT IR spectra averaging using a mix of different compositions (e.g., 70% polar o-phase +30% m-phase) of HZO DFT crystal phases allows quantification of the percentage of different structures inside the different HZO film thicknesses. Regarding the experimental data analysis, we used the spectroscopic data to perform a Kramers-Kronig constrained variational fit to extract the optical functions of the films using a Drude-Lorentz-based model. We found that the ferroelectric films could be described using a set of about 7 oscillators, which results in static dielectric constants in good agreement with theoretical values and previously reported ones for HfO2-doped ferroelectric films.
Collapse
Affiliation(s)
- Rebecca Cervasio
- L'Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France
| | - Emilie Amzallag
- ICMMO/SP2M, UMR 8182, Université Paris-Saclay, Bat. 670 Avenue des Sciences, 91400 Orsay-F, France
| | - Marine Verseils
- L'Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France
| | - Pierre Hemme
- L'Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France
| | - Jean-Blaise Brubach
- L'Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France
| | - Ingrid Cañero Infante
- Institut des Nanotechnologies de Lyon, CNRS UMR5270 ECL INSA UCBL CPE, 69621 Villeurbanne Cedex, France
| | - Greta Segantini
- Université de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - Pedro Rojo Romeo
- Université de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - Alessandro Coati
- L'Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France
| | - Alina Vlad
- L'Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France
| | - Yves Garreau
- L'Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France
| | - Andrea Resta
- L'Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France
| | - Bertrand Vilquin
- Université de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully Cedex, France
| | - Jérôme Creuze
- ICMMO/SP2M, UMR 8182, Université Paris-Saclay, Bat. 670 Avenue des Sciences, 91400 Orsay-F, France
| | - Pascale Roy
- L'Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France
| |
Collapse
|
39
|
Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
Collapse
Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| |
Collapse
|
40
|
Feng G, Zhu Q, Liu X, Chen L, Zhao X, Liu J, Xiong S, Shan K, Yang Z, Bao Q, Yue F, Peng H, Huang R, Tang X, Jiang J, Tang W, Guo X, Wang J, Jiang A, Dkhil B, Tian B, Chu J, Duan C. A ferroelectric fin diode for robust non-volatile memory. Nat Commun 2024; 15:513. [PMID: 38218871 PMCID: PMC10787831 DOI: 10.1038/s41467-024-44759-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Accepted: 12/29/2023] [Indexed: 01/15/2024] Open
Abstract
Among today's nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms. Here, a two-terminal ferroelectric fin diode (FFD) in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes is designed. Such a device not only shows both digital and analog memory functionalities but is also robust and universal as it works using two very different ferroelectric materials. When compared to all current nonvolatile memories, it cumulatively demonstrates an endurance up to 1010 cycles, an ON/OFF ratio of ~102, a feature size of 30 nm, an operating energy of ~20 fJ and an operation speed of 100 ns. Beyond these superior performances, the simple two-terminal structure and their self-rectifying ratio of ~ 104 permit to consider them as new electronic building blocks for designing passive crossbar arrays which are crucial for the future in-memory computing.
Collapse
Affiliation(s)
- Guangdi Feng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Zhejiang Lab, Hangzhou, 310000, China
| | - Qiuxiang Zhu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Zhejiang Lab, Hangzhou, 310000, China
| | - Xuefeng Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Luqiu Chen
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Xiaoming Zhao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Jianquan Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Shaobing Xiong
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Kexiang Shan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Zhenzhong Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Qinye Bao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Hui Peng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Jie Jiang
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Wei Tang
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200030, China
| | - Xiaojun Guo
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200030, China
| | - Jianlu Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Anquan Jiang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Brahim Dkhil
- Université Paris-Saclay, CentraleSupélec, CNRS-UMR8580, Laboratoire SPMS, 91190, Gif-sur-Yvette, France
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Zhejiang Lab, Hangzhou, 310000, China.
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
| |
Collapse
|
41
|
Das B, Padhan P. Reformation of La 0.7Sr 0.3MnO 3 properties by using ZnO in La 0.7Sr 0.3MnO 3-ZnO heterostructures grown on (001) oriented Si. NANOSCALE 2024; 16:795-805. [PMID: 38088797 DOI: 10.1039/d3nr04292h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Study of the available density of states (DOS) close-to-zero bias for conduction in strongly correlated electron systems, such as half-metallic La0.7Sr0.3MnO3 (LSMO) and its heterostructures, is important for fundamental and application reasons. As the DOS is proportional to the differential conductance (dI/dV), the dI/dV of a 120 Å LSMO film and its reformation in LSMO/ZnO heterostructures was investigated for different ZnO thicknesses. Unlike in conventional metals, the dI/dV of LSMO exhibits a power-law dependent zero-bias anomaly, i.e., dI/dV ∝ Vm (m ∼ 1) near zero bias in the ferromagnetic metallic state at 10 K. The growth of ZnO on LSMO reforms the linear dI/dVvs. V of LSMO near zero bias to non-linear. The exponent 'm' becomes ∼0.5 for a higher ZnO thickness, revealing increased electron-electron interactions and suppression of Kondo-like, double and superexchange interactions, which are responsible for the depression of the DOS of LSMO near zero bias. In a magnetically disordered state, i.e., around the Curie temperature, ZnO reforms the linear V-shaped dI/dV vs. V of LSMO to parabolic U-shaped dI/dVvs.V and controls the electron concentrations in the t2g-orbitals of Mn realized from the DOS simulations. Additionally, ZnO introduces a peak in the dI/dV vs. V due to Fowler-Nordheim tunnelling, and the peak voltage can be tuned by varying the ZnO thickness or temperature from 300 K to 360 K. Such functions of ZnO yield major perspectives for novel applications in thin-film-based devices.
Collapse
Affiliation(s)
- Bibekananda Das
- Nanoscale Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
| | - Prahallad Padhan
- Nanoscale Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
- Functional Oxides Research Group, Indian Institute of Technology Madras, Chennai 600036, India
| |
Collapse
|
42
|
Ma L, Wu J, Zhu T, Huang Y, Lu Q, Liu S. Ultrahigh Oxygen Ion Mobility in Ferroelectric Hafnia. PHYSICAL REVIEW LETTERS 2023; 131:256801. [PMID: 38181338 DOI: 10.1103/physrevlett.131.256801] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Accepted: 11/21/2023] [Indexed: 01/07/2024]
Abstract
Ferroelectrics and ionic conductors are important functional materials, each supporting a plethora of applications in information and energy technology. The underlying physics governing their functional properties is ionic motion, and yet studies of ferroelectrics and ionic conductors are often considered separate fields. Based on first-principles calculations and deep-learning-assisted large-scale molecular dynamics simulations, we report ferroelectric-switching-promoted oxygen ion transport in HfO_{2}, a wide-band-gap insulator with both ferroelectricity and ionic conductivity. Applying a unidirectional bias can activate multiple switching pathways in ferroelectric HfO_{2}, leading to polar-antipolar phase cycling that appears to contradict classical electrodynamics. This apparent conflict is resolved by the geometric-quantum-phase nature of electric polarization that carries no definite direction. Our molecular dynamics simulations demonstrate bias-driven successive ferroelectric transitions facilitate ultrahigh oxygen ion mobility at moderate temperatures, highlighting the potential of combining ferroelectricity and ionic conductivity for the development of advanced materials and technologies.
Collapse
Affiliation(s)
- Liyang Ma
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Jing Wu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Tianyuan Zhu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
| | - Yiwei Huang
- School of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China
| | - Qiyang Lu
- School of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, Zhejiang 310030, China
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
| |
Collapse
|
43
|
Hu Y, Rogée L, Wang W, Zhuang L, Shi F, Dong H, Cai S, Tay BK, Lau SP. Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides. Nat Commun 2023; 14:8470. [PMID: 38123543 PMCID: PMC10733392 DOI: 10.1038/s41467-023-44298-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2023] [Accepted: 12/07/2023] [Indexed: 12/23/2023] Open
Abstract
Engineering piezo/ferroelectricity in two-dimensional materials holds significant implications for advancing the manufacture of state-of-the-art multifunctional materials. The inborn nonstoichiometric propensity of two-dimensional transition metal dichalcogenides provides a spiffy ready-available solution for breaking inversion centrosymmetry, thereby conducing to circumvent size effect challenges in conventional perovskite oxide ferroelectrics. Here, we show the extendable and ubiquitous piezo/ferroelectricity within nonstoichiometric two-dimensional transition metal dichalcogenides that are predominantly centrosymmetric during standard stoichiometric cases. The emerged piezo/ferroelectric traits are aroused from the sliding of van der Waals layers and displacement of interlayer metal atoms triggered by the Frankel defects of heterogeneous interlayer native metal atom intercalation. We demonstrate two-dimensional chromium selenides nanogenerator and iron tellurides ferroelectric multilevel memristors as two representative applications. This innovative approach to engineering piezo/ferroelectricity in ultrathin transition metal dichalcogenides may provide a potential avenue to consolidate piezo/ferroelectricity with featured two-dimensional materials to fabricate multifunctional materials and distinguished multiferroic.
Collapse
Affiliation(s)
- Yi Hu
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 638798, Singapore
| | - Lukas Rogée
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Weizhen Wang
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Lyuchao Zhuang
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Fangyi Shi
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Hui Dong
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Songhua Cai
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Beng Kang Tay
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 638798, Singapore
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
| | - Shu Ping Lau
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China.
| |
Collapse
|
44
|
Yu L, Zhao HJ, Chen P, Bellaiche L, Ma Y. The anti-symmetric and anisotropic symmetric exchange interactions between electric dipoles in hafnia. Nat Commun 2023; 14:8127. [PMID: 38065960 PMCID: PMC10709352 DOI: 10.1038/s41467-023-43593-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 11/14/2023] [Indexed: 10/16/2024] Open
Abstract
The anti-symmetric and anisotropic symmetric exchange interactions between two magnetic dipole moments - responsible for intriguing magnetic textures (e.g., magnetic skyrmions) - have been discovered since last century, while their electric analogues were either hidden for a long time or still not known. It is only recently that the anti-symmetric exchange interactions between electric dipoles was proved to exist (with materials hosting such an interaction being still rare) and the existence of anisotropic symmetric exchange interaction between electric dipoles remains ambiguous. Here, by symmetry analysis and first-principles calculations, we identify hafnia as a candidate material hosting the non-collinear dipole alignments, the analysis of which reveals the anti-symmetric and anisotropic symmetric exchange interactions between electric dipoles in this material. Our findings can hopefully deepen the current knowledge of electromagnetism in condensed matter, and imply the possibility of discovering novel states of matter (e.g., electric skyrmions) in hafnia-related materials.
Collapse
Affiliation(s)
- Longju Yu
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Hong Jian Zhao
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China.
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, China.
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
- International Center of Future Science, Jilin University, Changchun, 130012, China.
| | - Peng Chen
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Yanming Ma
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China.
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
- International Center of Future Science, Jilin University, Changchun, 130012, China.
| |
Collapse
|
45
|
Feng ZJ, Xiong YA, Sun WC, Sha TT, Yao J, Pan Q, Hu H, Dong S, Xiong RG, You YM. First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2307518. [PMID: 38041802 DOI: 10.1002/adma.202307518] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Revised: 11/22/2023] [Indexed: 12/03/2023]
Abstract
On the path of persisting Moore's Law, one of the biggest obstacles is the "Boltzmann tyranny," which defines the lower limit of power consumption of individual transistors. Negative capacitance (NC) in ferroelectrics could provide a solution and has garnered significant attention in the fields of nanoelectronics, materials science, and solid-state physics. Molecular ferroelectrics, as an integral part of ferroelectrics, have developed rapidly in terms of both performance and functionality, with their inherent advantages such as easy fabrication, mechanical flexibility, low processing temperature, and structural tunability. However, studies on the NC in molecular ferroelectrics are limited. In this study, the focus is centered on the fabricated high-quality thin films of trimethylchloromethyl ammonium trichlorocadmium(II), and a pioneering investigation on their NC responses is conducted. The findings demonstrate that the NC exhibited by molecular ferroelectrics is comparable to that of conventional HfO2 -based ferroelectrics. This underscores the potential of molecular material systems for next-generation electronic devices.
Collapse
Affiliation(s)
- Zi-Jie Feng
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Yu-An Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Wen-Cong Sun
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Tai-Ting Sha
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Jie Yao
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Qiang Pan
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Huihui Hu
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Shuai Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Ren-Gen Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| | - Yu-Meng You
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, China
| |
Collapse
|
46
|
Jaszewski ST, Calderon S, Shrestha B, Fields SS, Samanta A, Vega FJ, Minyard JD, Casamento JA, Maria JP, Podraza NJ, Dickey EC, Rappe AM, Beechem TE, Ihlefeld JF. Infrared Signatures for Phase Identification in Hafnium Oxide Thin Films. ACS NANO 2023. [PMID: 38015799 DOI: 10.1021/acsnano.3c08371] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Phase identification in HfO2-based thin films is a prerequisite to understanding the mechanisms stabilizing the ferroelectric phase in these materials, which hold great promise in next-generation nonvolatile memory and computing technology. While grazing-incidence X-ray diffraction is commonly employed for this purpose, it has difficulty unambiguously differentiating between the ferroelectric phase and other metastable phases that may exist due to similarities in the d-spacings, their low intensities, and the overlapping of reflections. Infrared signatures provide an alternative route. However, their use in phase identification remains limited because phase control has overwhelmingly been accomplished via substituents, thereby convoluting infrared signatures between the substituents and the phase changes that they induce. Herein, we report the infrared optical responses of three undoped hafnium oxide films where annealing conditions have been used to create films consisting primarily of the ferroelectric polar orthorhombic Pca21, antipolar orthorhombic Pbca, and monoclinic P21/c phases, as was confirmed via transmission electron microscopy (TEM), UV-visible optical properties, and electrical property measurements. Vibrational signatures acquired from synchrotron nano-Fourier transform infrared spectroscopy (nano-FTIR) are shown to be capable of differentiating between the phases in a nondestructive, rapid, and nanoscale manner. The utility of nano-FTIR is illustrated for a film exhibiting an antiferroelectric polarization response. In this sample, it is proven that this behavior results from the Pbca phase rather than the often-cited tetragonal phase. By demonstrating that IR spectroscopy can unambiguously distinguish phases in this material, this work establishes a tool needed to isolate the factors dictating the ferroelectric phase stability in HfO2-based materials.
Collapse
Affiliation(s)
- Samantha T Jaszewski
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Sebastian Calderon
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Bishal Shrestha
- Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United States
- Wright Center for Photovoltaic Innovation & Commercialization, University of Toledo, Toledo, Ohio 43606, United States
| | - Shelby S Fields
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Atanu Samanta
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Fernando J Vega
- School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jacob D Minyard
- School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Joseph A Casamento
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jon-Paul Maria
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nikolas J Podraza
- Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United States
- Wright Center for Photovoltaic Innovation & Commercialization, University of Toledo, Toledo, Ohio 43606, United States
| | - Elizabeth C Dickey
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Thomas E Beechem
- School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jon F Ihlefeld
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Charles L. Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| |
Collapse
|
47
|
Liu Z, Zhang Q, Xie D, Zhang M, Li X, Zhong H, Li G, He M, Shang D, Wang C, Gu L, Yang G, Jin K, Ge C. Interface-type tunable oxygen ion dynamics for physical reservoir computing. Nat Commun 2023; 14:7176. [PMID: 37935751 PMCID: PMC10630289 DOI: 10.1038/s41467-023-42993-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Accepted: 10/26/2023] [Indexed: 11/09/2023] Open
Abstract
Reservoir computing can more efficiently be used to solve time-dependent tasks than conventional feedforward network owing to various advantages, such as easy training and low hardware overhead. Physical reservoirs that contain intrinsic nonlinear dynamic processes could serve as next-generation dynamic computing systems. High-efficiency reservoir systems require nonlinear and dynamic responses to distinguish time-series input data. Herein, an interface-type dynamic transistor gated by an Hf0.5Zr0.5O2 (HZO) film was introduced to perform reservoir computing. The channel conductance of Mott material La0.67Sr0.33MnO3 (LSMO) can effectively be modulated by taking advantage of the unique coupled property of the polarization process and oxygen migration in hafnium-based ferroelectrics. The large positive value of the oxygen vacancy formation energy and negative value of the oxygen affinity energy resulted in the spontaneous migration of accumulated oxygen ions in the HZO films to the channel, leading to the dynamic relaxation process. The modulation of the channel conductance was found to be closely related to the current state, identified as the origin of the nonlinear response. In the time series recognition and prediction tasks, the proposed reservoir system showed an extremely low decision-making error. This work provides a promising pathway for exploiting dynamic ion systems for high-performance neural network devices.
Collapse
Affiliation(s)
- Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- Yangtze River Delta Physics Research Center Co. Ltd., 213300, Liyang, China
| | - Donggang Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Mingzhen Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physics and Optoelectronics Engineering, Ludong University, 264025, Yantai, Shandong, China
| | - Ge Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Dashan Shang
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China.
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China.
| |
Collapse
|
48
|
Huang F, Saini B, Yu Z, Yoo C, Thampy V, He X, Baniecki JD, Tsai W, Meng AC, McIntyre PC, Wong S. Enhanced Switching Reliability of Hf 0.5Zr 0.5O 2 Ferroelectric Films Induced by Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:50246-50253. [PMID: 37856882 DOI: 10.1021/acsami.3c08895] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal-oxide-semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors that are nearly free of polarization "wake-up"─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T-O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. These results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.
Collapse
Affiliation(s)
- Fei Huang
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Balreen Saini
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Zhouchangwan Yu
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Chanyoung Yoo
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Vivek Thampy
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Xiaoqing He
- Electron Microscopy Core Facility and Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211, United States
| | - John D Baniecki
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Wilman Tsai
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Andrew C Meng
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Paul C McIntyre
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Simon Wong
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| |
Collapse
|
49
|
Niu Y, Li L, Qi Z, Aung HH, Han X, Tenne R, Yao Y, Zak A, Guo Y. 0D van der Waals interfacial ferroelectricity. Nat Commun 2023; 14:5578. [PMID: 37907466 PMCID: PMC10618478 DOI: 10.1038/s41467-023-41045-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 08/21/2023] [Indexed: 11/02/2023] Open
Abstract
The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.
Collapse
Affiliation(s)
- Yue Niu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Lei Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Zhiying Qi
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Hein Htet Aung
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Xinyi Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Reshef Tenne
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, 7610001, Rehovot, Israel
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Alla Zak
- Faculty of Sciences, Holon Institute of Technology, 52 Golomb Street, 5810201, Holon, Israel
| | - Yao Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
| |
Collapse
|
50
|
Pujar P, Cho H, Kim YH, Zagni N, Oh J, Lee E, Gandla S, Nukala P, Kim YM, Alam MA, Kim S. An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO 2 Ferroelectrics for Negative Capacitance Field Effect Transistors. ACS NANO 2023; 17:19076-19086. [PMID: 37772990 DOI: 10.1021/acsnano.3c04983] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/30/2023]
Abstract
The crucial role of nanocrystalline morphology in stabilizing the ferroelectric orthorhombic (o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by intentionally retaining carbonaceous impurities to inhibit grain growth. However, in the present study, large-grained (>100 nm) La-doped HfO2 (HLO) films are grown directly on silicon by adopting engineered water-diluted precursors with a minimum carbonaceous load and excellent shelf life. The o-phase stabilization is accomplished through a well-distributed La dopant, which generates uniformly populated oxygen vacancies, eliminating the need for oxygen-scavenging electrodes. These oxygen-deficient HLOs show a maximum remnant polarization of 37.6 μC/cm2 (2Pr) without wake-up and withstand large fields (>6.2 MV/cm). Furthermore, CSD-HLO in series with Al2O3 improves switching of MOSFETs (with an amorphous oxide channel) based on the negative capacitance effect. Thus, uniformly distributed oxygen vacancies serve as a standalone factor in stabilizing the o-phase, enabling efficient wake-up-free ferroelectricity without the need for nanostructuring, capping stresses, or oxygen-reactive electrodes.
Collapse
Affiliation(s)
- Pavan Pujar
- Department of Ceramic Engineering, Indian Institute of Technology (IIT-BHU), Varanasi, Uttar Pradesh 221005, India
| | - Haewon Cho
- Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Gyeonggi-do, Republic of Korea
| | - Young-Hoon Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Nicolò Zagni
- Department of Engineering "Enzo Ferrari" (DIEF), University of Modena and Reggio Emilia, Modena 41125, Italy
| | - Jeonghyeon Oh
- Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Gyeonggi-do, Republic of Korea
| | - Eunha Lee
- Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon 16678 Republic of Korea
| | - Srinivas Gandla
- Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Gyeonggi-do, Republic of Korea
| | - Pavan Nukala
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Muhammad Ashraful Alam
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Sunkook Kim
- Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Gyeonggi-do, Republic of Korea
| |
Collapse
|