One-dimensional inorganic nanostructures: synthesis, field-emission and photodetection

Introducing Ag Dopants into CdSe Nanoplatelets (NPLs) Leads to Effective Charge Separation for Better Photodetector Performance

Solution-processed colloidal cadmium chalcogenide nanoplatelets (NPLs)-based photodetectors (PD) are promising materials for next-generation optoelectronic devices due to their excellent optical properties. Here, we report on ultrafast carrier relaxation dynamics of four monolayer (4 ML) Ag-doped CdSe (Ag: CdSe) NPLs using ultrafast transient absorption spectroscopy and their photodetectors applications. A broad dopant emission is observed at around 650 nm with a large FWHM of ~431 meV and band edge emission at 515 nm. The intragap dopant state acts as a hole acceptor, which leads to better charge separation. The ultrafast transient absorption spectroscopy study shows faster carrier recombination dynamics with a hole transfer time scale of ~10 ps in Ag-doped CdSe NPLs. This supports the excited hole capture phenomenon at the dopant state. Ag-doped CdSe NPLs-based PD performed better than undoped CdSe NPLs with detectivity and responsivity values of 1.3×1010 Jones and 2.4 mA/W, respectively.

Synthesis of InAl-alloyed Ga2O3 nanowires for self-powered ultraviolet detectors by a CVD method

Ga2O3 is a kind of wide-band gap semiconductor, which has great potential in deep ultraviolet detection because of its high efficiency and fast response. Doping can improve the photoelectric properties of Ga2O3 materials. In this paper, In and Al elements alloyed Ga2O3 nanowires (InAl-Ga2O3 NWs) were successfully grown on p-GaN using a cost-effective chemical vapor deposition method and a vertical structure. The GaN/InAl-Ga2O3 NWs p-n self-powered wide-gap UV photodetector (PD) was constructed based on sputtered gold film as the bottom and top electrodes, and spin coated with polymethyl methacrylate as the insulating layer in the vertical direction. The GaN/InAl-Ga2O3 UV PD exhibits excellent performances, including an extremely low dark current of 0.015 nA, a maximum photocurrent of about 16 nA at zero-bias voltage under 265 nm illumination, and a light-to-dark current ratio greater than 103. The responsivity is 0.94 mA W-1, the specific detectivity is 9.63 × 109 jones, and the good fast response/attenuation time is 31.2/69.6 ms. The self-powered characteristics are derived from the internal electric field formed between p-type GaN and n-type InAl-Ga2O3 NWs, which is conducive to the rapid separation and transfer of photogenerated carriers. This work provides an innovative mechanism of high-performance metal oxide nanowires for the application of p-n junction photodetectors, which can operate without any external bias.

High-Performance Planar Field-Emission Photodetector of Monolayer Tungsten Disulfide with Microtips

Monolayer tungsten disulfide (ML WS2 ) is believed as an ideal photosensitive material due to its small direct bandgap, large exciton/trion binding energy, high carrier mobility, and considerable quantum conversion efficiency. Compared with other photosensitive devices, planar field emission (FE)-type photodetectors with a full-plane structure should simultaneously have rapider switching speed and lower power consumption. In this work, ML WS2 microtips are fabricated by electron beam lithography (EBL) way and used to construct a planar FE-type photodetector. By optimization design, ML WS2 with three microtips can exhibit the maximum current density as high as  52 A cm-2 (@300 V µm-1 ), and the largest photoresponsivity is up to 6.8 × 105 A W-1 under green light irradiation, superior to that of many other ML transition metal dichalcogenide (TMDC) detectors. More interestingly, ML WS2 devices with microtips can effectively solve the contradictory problem between large photoresponsivity and rapid switching speed. The excellent photoresponse performances of ML WS2 with microtips should be attributed to their high carrier mobility, sharp emission edge, ultrahigh quantum yield, and unique planar FE device structure. Our research may shed new light on exploring the fabrication technology and photosensitive mechanism of two dimensional (2D) material-based planar FE photodetectors.

Investigation of conduction mechanism and UV light response of vertically grown ZnO nanorods on an interdigitated electrode substrate

Vertically aligned zinc oxide nanorod (ZnO-NR) growth was achieved through a wet chemical route over a comb-shaped working area of an interdigitated Ag-Pd alloy signal electrode. Field-emission scanning electron microscopy images confirmed the formation of homogeneous ZnO-NRs grown uniformly over the working area. X-ray diffraction revealed single-phase formation of ZnO-NRs, further confirmed by energy-dispersive X-ray spectroscopy analysis. Temperature-dependent impedance and modulus formalisms showed semiconductor-type behavior of ZnO-NRs. Two electro-active regions i.e., grain and grain boundary, were investigated which have activation energy ∼0.11 eV and ∼0.17 eV, respectively. The conduction mechanism was investigated in both regions using temperature-dependent AC conductivity analysis. In the low-frequency dispersion region, the dominant conduction is due to small polarons, which is attributed to the grain boundary response. At the same time, the correlated barrier hopping mechanism is a possible conduction mechanism in the high dispersion region attributed to the bulk/grain response. Moreover, substantial photoconductivity under UV light illumination was achieved which can be attributed to the high surface-to-volume ratio of zinc oxide nanorods as they provide high density of trap states which causes an increase in the carrier injection and movement leading to persistent photoconductivity. This photoconductivity was also facilitated by the frequency sweep applied to the sample which suggests the investigated ZnO nanorods based IDE devices can be useful for the application of efficient UV detectors. Experimental values of field lowering coefficient (β_exp) matched well with the theoretical value of β_S which suggests that the possible operating conduction mechanism in ZnO nanorods is Schottky type. I-V characteristics showed that the significantly high photoconductivity of ZnO-NRs as a result of UV light illumination is owing to the increase in number of free charge carriers as a result of generation of electron-hole pairs by absorption of UV light photons.

Generalized fractional Wentzel–Kramers–Brillouin approximation for electron tunnelling across rough metal interface

The conductive rough surfaces act as an integral part of several electron devices and systems. Electron tunnelling through the potential barrier imposed by the rough metal-vacuum interface is an important mechanism of charge transport in vacuum electron devices. Here, we analytically derive a generalized current–voltage relationship with a fractional image potential barrier that considers the reduced space-dimensionality encountered by the tunnelling electrons at a rough interface, in an effective manner. The traditional Schottky–Nordhiem equation based on the Schottky image potential barrier is shown to be a limiting case of our model for a perfectly flat surface. The fractional-dimension parameter used in this model accounts for the barrier reduction due to the geometrical roughness and it can be determined by fitting our model to a given current–voltage measurement. It is shown that the application of this model could reduce the error between measured current–voltage response and theoretical estimates based on the conventional model. This work provides an analytical framework for efficient design and engineering of quantum tunnelling in practical electron devices.

Two-dimensional heterostructures for photocatalytic CO2 reduction

The photocatalysis conversion of CO₂ into fuels has become an encouraging method to address climate and energy issues as a long-term solution. Single material suffers poor yield due to low light energy utilization and high recombination rate of photoinduced electron-hole pairs. It is an efficient approach to construct heterojunction through two or three materials to improve the photocatalytic performance. Recently, 2D-based heterojunction is getting popular for outstanding properties, such as special light collecting structure to enhance light harvest, intimate interface to facilitate charge transfer and separation, and large specific surface area to provide abundant reactive sites. Recently, some new 2D-based heterostructures materials (both structure and composition) have been developed with excellent performance. 2D materials exert structural and functional advantages in these fine composite photocatalysts. In this review, the literatures about the photocatalytic conversion of CO₂ are mainly summarized based on overall structure, interface type and material type of 2D-based heterojunction, with special attention given to the preparation, characterization, structural advantages and reaction mechanism of novel 2D-based heterojunction. This work is in hope of offering a basis for designing improved composite photocatalyst for CO₂ photoreduction.

Field emitter electrostatics: a review with special emphasis on modern high-precision finite-element modelling

This review of the quantitative electrostatics of field emitters, covering analytical, numerical and 'fitted formula' approaches, is thought the first of its kind in the 100 years of the subject. The review relates chiefly to situations where emitters operate in an electronically ideal manner, and zero-current electrostatics is applicable. Terminology is carefully described and is 'polarity independent', so that the review applies to both field electron and field ion emitters. It also applies more generally to charged, pointed electron-conductors-which exhibit the 'electrostatic lightning-rod effect', but are poorly discussed in general electricity and magnetism literature. Modern electron-conductor electrostatics is an application of the chemical thermodynamics and statistical mechanics of electrons. In related theory, the primary role of classical electrostatic potentials (rather than fields) becomes apparent. Space and time limitations have meant that the review cannot be comprehensive in both detail and scope. Rather, it focuses chiefly on the electrostatics of two common basic emitter forms: the needle-shaped emitters used in traditional projection technologies; and the post-shaped emitters often used in modelling large-area multi-emitter electron sources. In the post-on-plane context, we consider in detail both the electrostatics of the single post and the interaction between two identical posts that occurs as a result of electrostatic depolarization (often called 'screening' or 'shielding'). Core to the review are discussions of the 'minimum domain dimensions' method for implementing effective finite-element-method electrostatic simulations, and of the variant of this that leads to very precise estimates of dimensionless field enhancement factors (error typically less than 0.001% in simple situations where analytical comparisons exist). Brief outline discussions, and some core references, are given for each of many 'related considerations' that are relevant to the electrostatic situations, methods and results described. Many areas of field emitter electrostatics are suggested where further research and/or separate mini-reviews would probably be useful.

Necklace-Like Nanostructures: From Fabrication, Properties to Applications

The shape-controlled synthesis of nanocrystals remains a hot research topic in nanotechnology. Particularly, the fabrication of 1D structures such as wires, rods, belts, and tubes has been an interesting and important subject within nanoscience in the last few decades. 1D necklace-like micro/nanostructures are a sophisticated geometry that has attracted increasing attention due to their anisotropic and periodic structure, intrinsic high surface area, abundant transport channels, exposure of each component to the surface, and multiscale roughness of the surface. These characteristics enable their unique electrical, optical, and catalytic properties. This review provides a comprehensive summary of the advanced research progress on the fabrication strategies, novel properties, and various applications of necklace-like structures. It begins with the main fabrication methods of necklace-like structures and subsequently details a variety of their properties and applications. It concludes with the authors' perspectives on future research and development of the necklace-like structures.

CsPbBr3 microarrays with tunable periodicity, optoelectronic and field emission properties using self-assembled polystyrene template and co-evaporation method

The booming growth of all inorganic cesium lead halide perovskites in optoelectronic applications has prompted extensive research interest in the fabrication of ordered nanostructures or microarrays for enhanced device performances. However, the high cost and complexity of commercial lithographic approaches impede the facile fabrication of perovskite microarrays. Herein, CsPbBr₃ microarrays with tunable periodicities have been fabricated using a self-assembled polystyrene nanosphere template and a co-evaporation method. The periodicity of CsPbBr₃ microarrays is precisely manipulated by simply modifying the size of polystyrene nanospheres. These microarrays are beneficial for light harvesting, leading to better light absorption ability and prolonged photoinduced carrier lifetime. The longest average carrier lifetime of 58.3 ns is obtained for CsPbBr₃ microarrays with a periodicity of 1.0 μm. More importantly, the periodic structures of CsPbBr₃ microarrays result in a tunable density of emitter tips in field emission devices. Compared to compact CsPbBr₃ films, a 68.2% decrease of the turn-on field is observed for CsPbBr₃ microarrays when the periodicity is 150 nm. The higher density of emitter tips leads to larger local field enhancement, and hence the largest field enhancement factor of 3346.6. Finally, a good emission current stability for CsPbBr₃ microarray-based field emission devices has been demonstrated.

Optical, electrochemical and photocatalytic properties of cobalt doped CsPbCl3 nanostructures: a one-pot synthesis approach

The present manuscript aims at the synthesis of cesium based halide perovskite nanostructures and the effect of cobalt doping on the structural, optical, lumnisent, charge storage and photocatalytic properties. In a very first attempt, we report the solvothermal synthesis of Co doped CsPbCl₃ nanostructures under subcritical conditions. The structural features were demonstrated by X-ray diffraction (XRD) Surface morphology determined cubic shape of the synthesized particles. Doping is an excellent way to modify the properties of host material in particular to the electronic structure or optical properties. Incorporation of Co²⁺ ions in the perovskite structure tunes the optical properties of the nanostructures making this perovskite a visible light active material (Eg = 1.6 eV). This modification in the optical behaviour is the result of size effect, the crystallite size of the doped nanostructures increases with cobalt doping concentration. Photolumniscance (PL) study indicated that CsPbCl₃ exhibited Blue emission. Thermogravametric analysis (TGA) revealed that the nanostructures are quite stable at elavated temperatures. The electrochemical performance depicts the pseudocapacative nature of the synthesized nanostructures and can used for charge storage devices. The charge storage capability showed direct proportionality with cobalt ion concentration. And Finally the photocatalytic performance of synthesized material shows superior catalytic ability degrading 90% of methylene blue (MB) dye in 180 min under visible light conditions.

Transition metal sulfides meet electrospinning: versatile synthesis, distinct properties and prospective applications

One-dimensional (1D) electrospun nanomaterials have attracted significant attention due to their unique structures and outstanding chemical and physical properties such as large specific surface area, distinct electronic and mass transport, and mechanical flexibility. Over the past years, the integration of metal sulfides with electrospun nanomaterials has emerged as an exciting research topic owing to the synergistic effects between the two components, leading to novel and interesting properties in energy, optics and catalysis research fields for example. In this review, we focus on the recent development of the preparation of electrospun nanomaterials integrated with functional metal sulfides with distinct nanostructures. These functional materials have been prepared via two efficient strategies, namely direct electrospinning and post-synthesis modification of electrospun nanomaterials. In this review, we systematically present the chemical and physical properties of the electrospun nanomaterials integrated with metal sulfides and their application in electronic and optoelectronic devices, sensing, catalysis, energy conversion and storage, thermal shielding, adsorption and separation, and biomedical technology. Additionally, challenges and further research opportunities in the preparation and application of these novel functional materials are also discussed.

In search of nano-materials with enhanced secondary electron emission for radiation detectors

There has been limited research devoted to secondary electron emission (SEE) from nano-materials using rapid and heavy ion bombardment. Here we report a comparison of SEE properties between novel nano-materials with a three-dimensional nano-structure composed of a mostly regular pattern of rods and gold used as a standard material for SEE under bombardment of heavy ions at energies of a few MeV/nucleon. The nano-structured materials show enhanced SEE properties when compared with gold. Results from this work will enable the development of new radiation detectors for science and industry.

Recent Advances in Perovskite Photodetectors for Image Sensing

In recent years, metal halide perovskites have been widely investigated to fabricate photodetectors for image sensing due to the excellent photoelectric performance, tunable bandgap, and low-cost solution preparation process. In this review, a comprehensive overview of the recent advances in perovskite photodetectors for image sensing is provided. First, the key performance parameters and the basic device types of photodetectors are briefly introduced. Then, the recent developments of image sensors on the basis of different dimensional perovskite materials, including 0D, 1D, 2D, and 3D perovskite materials, are highlighted. Besides the device structures and photoelectric properties of perovskite image sensors, the preparation methods of perovskite photodetector arrays are also analyzed. Subsequently, the single-pixel imaging of perovskite photodetectors and the strategies to fabricate narrowband perovskite photodetectors for color discrimination are discussed. Finally, the potential challenges and possible solutions for the future development of perovskite image sensors are presented.

Dithiocarbamate Complexes as Single Source Precursors to Nanoscale Binary, Ternary and Quaternary Metal Sulfides

Nanodimensional metal sulfides are a developing class of low-cost materials with potential applications in areas as wide-ranging as energy storage, electrocatalysis, and imaging. An attractive synthetic strategy, which allows careful control over stoichiometry, is the single source precursor (SSP) approach in which well-defined molecular species containing preformed metal-sulfur bonds are heated to decomposition, either in the vapor or solution phase, resulting in facile loss of organics and formation of nanodimensional metal sulfides. By careful control of the precursor, the decomposition environment and addition of surfactants, this approach affords a range of nanocrystalline materials from a library of precursors. Dithiocarbamates (DTCs) are monoanionic chelating ligands that have been known for over a century and find applications in agriculture, medicine, and materials science. They are easily prepared from nontoxic secondary and primary amines and form stable complexes with all elements. Since pioneering work in the late 1980s, the use of DTC complexes as SSPs to a wide range of binary, ternary, and multinary sulfides has been extensively documented. This review maps these developments, from the formation of thin films, often comprised of embedded nanocrystals, to quantum dots coated with organic ligands or shelled by other metal sulfides that show high photoluminescence quantum yields, and a range of other nanomaterials in which both the phase and morphology of the nanocrystals can be engineered, allowing fine-tuning of technologically important physical properties, thus opening up a myriad of potential applications.

High efficiency organic-Si hybrid solar cells with a one-dimensional CdS interlayer

A carrier-selective passivating contact is one of the main factors for the preparation of high-efficiency solar cells. In this work, a one-dimensional nanostructured CdS material combined with quasi-metallic TiN exhibits excellent contact performance with n-Si. In addition, the introduction of the CdS nanowire interlayer is more conducive to the extraction and transmission of electrons, which is attributed to a more suitable energy level alignment between the rear contact and the n-Si absorption layer. As a result, the power conversion efficiency of organic/Si solar cells based on the CdS NW/TiN/Al electron selective passivating contact exceeds 14.0%. This shows a promising technique to achieve high-performance and low-cost photovoltaic devices.

Space-confined CVD growth of 2D-MoS2 crystals with tunable dimensionality via adjusting growth conditions

2D MoS₂ crystals with tunable dimensionality can be realized by the reaction of S and Mo foil under adjusted growth conditions via a space-confined chemical vapor deposition method.

Nanofabrication within unimolecular nanoreactors

Nanoparticles (NPs) have been a research focus over the last three decades owing to their unique properties and extensive applications. It is crucial to precisely control the features of NPs including topology, architecture, composition, size, surface and assembly because these features will affect their properties and then applications. Ingenious nanofabrication strategies have been developed to precisely control these features of NPs, especially for templated nanofabrication within predesigned nanoreactors. Compared with conventional nanoreactors (hard templates and supramolecular nanoreactors), unimolecular nanoreactors exhibit (1) covalently stable nanostructures uninfluenced by environmental variations, (2) extensively regulated features of the structure including topology, composition, size, surface and valence due to the rapid development of polymer chemistry, and (3) effective encapsulation of abundant guests with or without strong interaction to achieve the function of loading, delivery and conversion of guests. Thus, unimolecular nanoreactors have shown fascinating prospects as templates for nanofabrication. Various NPs with expected topologies (sphere, rod, tube, branch, and ring), architectures (compact, hollow, core-shell, and necklace-like), compositions (metal, metal oxide, semiconductor, doping, alloy, silica, and composite), sizes (generally 1-100 nm), surface properties (hydrophilic, hydrophobic, reactivity, valence and responsivity) and assemblies (oligomer, chain, and aggregate) can be fabricated easily within reasonably designed unimolecular nanoreactors in a programmable way. In this review, we provide a brief introduction of the properties and types of unimolecular nanoreactors, a condensed summary of representative methodologies of nanofabrication within various unimolecular nanoreactors and a predicted outlook of the potential further developments of this charming nanofabrication approach.

Radial Nanowire Assemblies under Rotating Magnetic Field Enabled Efficient Charge Separation

Developing efficient charge separation strategies is essential to achieve high-power conversion efficiency in the fields of chemistry, biology, and material science. Herein, we develop a facile strategy for fabrication of unique wafer-scale radial nanowire assemblies by exploiting shear force in rotary solution. The assembly mechanism can be well revealed by the large-scale stochastic dynamics simulation. Free electrons can be rapidly generated to produce quantitatively tunable current output when the radial nanowire assemblies rotate under the magnetic field. Moreover, the photoconductive performance of the radial semiconductor nanowire assemblies can be remarkably enhanced as the electron-hole recombination was retrained by the efficient charge separation under the rotating magnetic field. Such large-scale unique nanowire assemblies will facilitate the design of an efficient charge separation process in biosystem, sensors, and photocatalysis.

A Novel Top-Down Fabrication Process for Vertically-Stacked Silicon-Nanowire Array

Silicon nanowires are widely used for sensing applications due to their outstanding mechanical, electrical, and optical properties. However, one of the major challenges involves introducing silicon-nanowire arrays to a specific layout location with reproducible and controllable dimensions. Indeed, for integration with microscale structures and circuits, a monolithic wafer-level process based on a top-down silicon-nanowire array fabrication method is essential. For sensors in various electromechanical and photoelectric applications, the need for silicon nanowires (as a functional building block) is increasing, and thus monolithic integration is highly required. In this paper, a novel top-down method for fabricating vertically-stacked silicon-nanowire arrays is presented. This method enables the fabrication of lateral silicon-nanowire arrays in a vertical direction, as well as the fabrication of an increased number of silicon nanowires on a finite dimension. The proposed fabrication method uses a number of processes: photolithography, deep reactive-ion etching, and wet oxidation. In applying the proposed method, a vertically-aligned silicon-nanowire array, in which a single layer consists of three vertical layers with 20 silicon nanowires, is fabricated and analyzed. The diamond-shaped cross-sectional dimension of a single silicon nanowire is approximately 300 nm in width and 20 μm in length. The developed method is expected to result in highly-sensitive, reproducible, and low-cost silicon-nanowire sensors for various biomedical applications.

Synthesis, structure and optimized field emission properties of highly oriented ZnO/Pt core–shell nanorods on a Zn substrate

The current density of as-fabricated Pt15/ZnO NR emitters was about 1900 times that of the bare ZnO emitters.

Synthesis of a finger-like MoS2@VS2 micro–nanocomposite with enhanced field emission performance

A MoS₂@VS₂ micro–nanocomposite showed enhanced field emission properties benefiting from the synergy of the two materials.

Micro Flowers of SrS/Bi2S3 Nanocomposite and Its Field Emission Properties

The three-dimensional hierarchical SrS/Bi2S3 heterostructures were synthesized by a template-free single-step hydrothermal method. The structural and morphological studies revealed the formation of a single crystalline orthorhombic heterostructure with rod-like morphologies possessing a high aspect ratio. The field emission properties of SrS/Bi2S3 nanorods were investigated. J–E and the Fowler–Nordheim (F–N) plot, as well as long-term field emission (FE) stability, were studied. SrS/Bi2S3 nanoflowers have enhanced the FE properties more than the virgin Bi2S3. The observed values of the re-producible turn-on field for SrS/Bi2S3 defined to draw an emission current density of ca. 1 µA/cm2 were found to be ca. 2.50 V/µm, and of the threshold field to draw a current density of ca. 10 µA/cm2 were found to be ca. 3.00 V/µm (without visible light illumination). A maximum emission current density of ca. 527 μA/cm2 was drawn without light and a current density of ca. 1078 μA/cm2 with light, which is higher than that of pristine Bi2S3.

Ultrafast Field-Emission Electron Sources Based on Nanomaterials

The search for electron sources with simultaneous optimal spatial and temporal resolution has become an area of intense activity for a wide variety of applications in the emerging fields of lightwave electronics and attosecond science. Most recently, increasing efforts are focused on the investigation of ultrafast field-emission phenomena of nanomaterials, which not only are fascinating from a fundamental scientific point of view, but also are of interest for a range of potential applications. Here, the current state-of-the-art in ultrafast field-emission, particularly sub-optical-cycle field emission, based on various nanostructures (e.g., metallic nanotips, carbon nanotubes) is reviewed. A number of promising nanomaterials and possible future research directions are also established.

Ferroelectricity-Enhanced Piezo-Phototronic Effect in 2D V-Doped ZnO Nanosheets

Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo-phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p-Si/V-doped-ferroelectric-ZnO 2D nanosheets (FESZ-PD) is fabricated, and the ferroelectricity-enhanced piezo-phototronic effect on the photoresponse behavior of the FESZ-PD is carefully investigated. By introducing the ferroelectricity and the piezo-phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo-phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without ferroelectricity under strain-free conditions, the photoresponsivity R of the FESZ-PD increases by 2.4 times when applying a -0.20‰ compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the ferroelectricity with the piezo-phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high-performance electronic and optoelectronic devices.

Robust Photodetectable Paper from Chemically Exfoliated MoS2-MoO3 Multilayers

Photodetectors, which are capable of detecting light with varied wavelength, have nowadays been widely applied onto emerging fields such as security, entertainment, healthcare, environment, and so on. As the one with a two-dimensional layered structure, molybdenum disulfide (MoS₂) possesses striking optical and electrical properties that can be used in photodetecting, yet the challenges remain in terms of material processing, device fabrication simplicity, and enhancement of overall photodetection performance. In this work, a photodetectable paper based on a mixture of double-phased MoS₂ (1T and 2H) and MoO₃ was successfully fabricated through a straightforward route, that is, chemical exfoliation and deposition of MoS₂ powder on a flexible cellulose ester membrane, followed by inkjet-printed PEDOT:PSS as electrodes. The obtained device shows varied sensitivity to the light with different wavelengths. Compared with that under green and red lights, the prepared photodetector has the highest internal quantum efficiency (0.063%) and responsivity (0.134 mA W^-1), while having longest response/recovery time (17.5/15.3 s) when illuminated with purple light (405 nm). The achieved responsivity is much higher than other reported liquid exfoliation- and solution-derived MoS₂ photodetectors. This is ascribed to (1) the enhanced photoelectron generation caused by both MoS₂ and MoO₃ and (2) the good electric conductivity and efficient charge transport caused by the metallic 1T MoS₂. This work demonstrates the feasibility of fabricating the MoS₂-based photodetector with excellent performance through a simple exfoliation/filtration and inject printing route, and the detailed study on the response to light with different wavelengths unveils the interaction between the device and the incident light, further broadening the potential applications of such design.

Optimal Sr-Doped Free TiO2@SrTiO3 Heterostructured Nanowire Arrays for High-Efficiency Self-Powered Photoelectrochemical UV Photodetector Applications

Due to their high performance, photoelectrochemical ultraviolet (UV) photodetectors have attracted much attention, but the recombination of photogenerated electrons at the interface of photoanode/electrolyte limited further improvement of photoelectrochemical UV photodetectors (PEC UVPDs). Modification of TiO2 photoanode by SrTiO3 could improve the performance of UVPD, because the energy barrier that is established at the TiO2–SrTiO3 interface could accelerate the separation of the photogenerated electrons-holes pair. However, the recombination center that is caused by the preparation of TiO2@SrTiO3 core-shell heterostructured nanostructure decreases the performance of PEC UVPDs, which is still an important problem that hindered its application in PEC UVPDs. In this paper, we presented a Sr-doped free TiO2@SrTiO3 core-shell heterostructured nanowire arrays as a photoanode for the self-powered PEC UVPD. This will not only accelerate the separation of the photogenerated electrons-holes pair, but it will also reduce the recombination of photogenerated electron-hole pairs in the photoanode. The intrinsic effect of SrTiO3 reaction time on the J variations of UVPDs is investigated in detail. An impressive responsivity of 0.358 A W−1 was achieved at 360 nm for the UVPD based on TiO2@SrTiO3 core-shell heterostructured nanowire arrays, which heretofore is a considerably high photoresponsivity for self-powered photoelectrochemical UVPDs. Additionally, this UVPD also exhibits a high on/off ratio, fast response time, excellent visible-blind characteristic, and linear optical signal response.

Chemical Vapor Deposition Growth of High Crystallinity Sb2 Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors

Low-dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb₂ Se₃ nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb₂ Se₃ NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle-resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb₂ Se₃ NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb₂ Se₃ NW exhibit a wide spectral photoresponse range from visible to NIR (400-900 nm). Owing to the high crystallinity of Sb₂ Se₃ NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W^-1 , and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb₂ Se₃ NW, the device exhibits polarization-dependent photoresponse. The high crystallinity and superior anisotropy of Sb₂ Se₃ NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.

Solvothermal synthesis of cesium lead halide perovskite nanowires with ultra-high aspect ratios for high-performance photodetectors

One-dimensional (1D) inorganic perovskite nanowires (NWs) have attracted promising attention for application in the fields of photodetection, lasers and lighting due to their outstanding optoelectronic properties. However the direct synthesis of highly pure all-inorganic perovskite NWs with well-defined morphologies and compositions still remains challenging. Here we report the controllable synthesis of brightly emitting cesium lead halide CsPbX₃ (X = Cl, Br) NWs and their assembly into high-performance photodetector nanodevices. High quality CsPbX₃ NWs have been directly synthesized via a solvothermal method without using post-synthetic anion-exchange reactions. The NWs are single-crystalline, with uniform diameters of ∼10 nm and lengths of up to tens of microns, showing ultra-high aspect ratios. Both CsPbCl₃ and CsPbBr₃ NWs show excellent photoluminescence (PL) characteristics with narrow emission spectra and high PL quantum yields (PLQYs). The photodetectors constructed on the CsPbX₃ NWs and interdigital electrodes (with interdigitation widths up to 100 μm) exhibit promising photoelectric properties, achieving high switching ratios (5.8 × 10³ for CsPbCl₃ NW devices and 1.1 × 10³ for CsPbBr₃ NW devices) and fast response time. The present solvothermal approach is controllable, convenient, and is easily realized for quantifiable preparation, and can further promote the application of the all-inorganic perovskite NWs in the optoelectronic field.

Competition of Carrier Separation and Recombination for an Optimized Electrode Configuration for Flexible Thin-Film Solar Cells

The inhibition of the rapid recombination of photochemical charges at heterointerfaces and the promotion of transfer and extraction are central to photoelectric conversion in solar cells. With the use of Cu₄Bi₄S₉ nanoribbons-graphene sheets (CBS-GSs) as a hybrid photosensitive layer and the growth of ZnO nanowires on Zn₂SnO₄ nanowires (ZTO-ZnO) for the electron transfer layer, a flexible solar cell ZTO-ZnO/CBS-GSs was prepared on a stainless steel mesh. In this study, time-resolved fluorescence spectroscopy (TFS) and transient surface photovoltage (TPV) were used to describe the transition and transport process for the photogenerated carriers. With a high fill factor (0.76) and improved electron mobility for the ZTO-ZnO nanostructure, a high photoelectric conversion efficiency of 11.6% was obtained, which was evidently higher than that of a ZTO/CBS-GSs cell (9.2%) and a ZnO nanoparticles/CBS-GSs cell (3.9%). The efficient dissociation of photogenerated carriers at CBS-GSs interfaces, rapid transfer of free electrons in the ZTO-ZnO system, and fast extraction of holes from the selective NiO layer with an optimized architecture led to a superior performance. The charge recombination at the interface can be determined by electrochemical impedance spectroscopy (EIS). Active exploration via inevitable competition between charge separation and recombination (TFS, TPV, EIS, etc.) can provide insights into the entire dynamic process and a separation mechanism for photoinduced carriers, which can also promote the application of flexible thin-film solar cells.

Template-Free Synthesis of High-Yield Fe-Doped Cesium Lead Halide Perovskite Ultralong Microwires with Enhanced Two-Photon Absorption

Doping in perovskite is challenging and competitive due to the inherently fast growth mechanism of perovskite structure. Here, we demonstrate successful synthesis of high-yield Fe-doped cesium lead halide perovskite ultralong microwires (MWs) that have diameters up to ∼5 μm and lengths up to millimeters via an antisolvent vapor-assisted template-free method. Microstructure characterization confirms the uniformly doped Fe in the high-quality crystal perovskite MWs. Significantly, doping the Fe(III) concentration can affect both the MW morphology and photoluminescence (PL). The band edge emission of the MW at variable excitation has been accounted for by the superposition and combination of optical transitions of nearby singlet, triplet, and magnetic polaronic excitons. High-quality two-photon PL emission and the enhanced nonlinear absorption coefficient of Fe-doped MWs have been experimentally demonstrated. This superhigh nonlinear absorption coefficient and high-quality optical properties endow it with promising applications in spin-related optical switching and optical limiting devices.

Synthesis of zinc oxide nanorods or nanotubes on one side of a microcantilever

Cantilevers are really promising sensitive sensors despite their small surface. In order to increase this surface and consequently their sensitivity, we nanostructured them with zinc oxide (ZnO) nanorods or nanotubes having a diameter of approximately 100 nm and a length of 1 µm. The nanostructure growth was first optimized on a silicon wafer and then transferred to the cantilevers. The ZnO nanorods were grown in an autoclave. The centre of the nanorods was dissolved in order to obtain nanotubes. The dissolution conditions were optimized in order to have the longest etching depth. After 1.25 h in a dissolution solution containing 0.75 wt% of NH_3(aq) and 0.75 wt% of cetyltrimethyl ammonium bromide, the longest etching depth was obtained. After the transfer of the syntheses to the cantilevers, nanorods/nanotubes grew on both sides of the cantilever, which prevents the reflection of the laser allowing the resonance frequency measurement. A masking procedure was developed in order to avoid the growth on one face of the cantilever of zinc oxide nanostructures. As far as the authors are concerned, for the first time, zinc oxide nanotubes were synthesized on only one face of cantilevers with optical readout.

Toward the use of CVD-grown MoS2 nanosheets as field-emission source

Densely populated edge-terminated vertically aligned two-dimensional MoS₂ nanosheets (NSs) with thicknesses ranging from 5 to 20 nm were directly synthesized on Mo films deposited on SiO₂ by sulfurization. The quality of the obtained NSs was analyzed by scanning electron and transmission electron microscopy, and Raman and X-ray photoelectron spectroscopy. The as-grown NSs were then successfully transferred to the substrates using a wet chemical etching method. The transferred NSs sample showed excellent field-emission properties. A low turn-on field of 3.1 V/μm at a current density of 10 µA/cm² was measured. The low turn-on field is attributed to the morphology of the NSs exhibiting vertically aligned sheets of MoS₂ with sharp and exposed edges. Our findings show that the fabricated MoS₂ NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips.

High-Performance Organic Photodetectors from a High-Bandgap Indacenodithiophene-Based π-Conjugated Donor-Acceptor Polymer

A conjugated donor-acceptor polymer, poly[4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydro- s-indaceno[1,2- b:5,6- b']dithiophene-2,7-diyl- alt-5-(2-ethylhexyl)-4 H-thieno[3,4- c]pyrrole-4,6(5 H)-dione-1,3-diyl] (PIDT-TPD), is blended with the fullerene derivative [6,6]phenyl-C61-butyric acid methyl ester (PC₆₁BM) for the fabrication of thin and solution-processed organic photodetectors (OPDs). Systematic screening of the concentration ratio of the blend and the molecular weight of the polymer is performed to optimize the active layer morphology and the OPD performance. The device comprising a medium molecular weight polymer (27.0 kg/mol) in a PIDT-TPD:PC₆₁BM 1:1 ratio exhibits an external quantum efficiency of 52% at 610 nm, a dark current density of 1 nA/cm², a detectivity of 1.44 × 10¹³ Jones, and a maximum 3 dB cutoff frequency of 100 kHz at -5 V bias. These results are remarkable among the state-of-the-art red photodetectors based on conjugated polymers. As such, this work presents a functional organic active material for high-speed OPDs with a linear photoresponse at different light intensities.

Ionic liquid bifunctionally modulated aggregation-coalescence mechanism to synthesize SnSe single-crystal nanorod/nanoparticle core shell nanostructures and single-crystal nanorods for optoelectronics

Ionic liquid-bifunctional modulated synthesis of SnSe nanorafts and nanorods for optoelectronics.

High-Sensitive Ultraviolet Photodetectors Based on ZnO Nanorods/CdS Heterostructures

The ultraviolet (UV) photodetectors with ZnO nanorods (NRs)/CdS thin film heterostructures on glass substrates have been fabricated and characterized. It can be seen that the UV photoresponsivity of such a device became higher as the ZnO NR length was increased in the investigation. With an incident wavelength of 350 nm and 5 V applied bias, the responsivity of photodetectors based on ZnO NR/CdS heterostructures with the ZnO NR length at 500, 350, and 200 nm and traditional CdS film were at 12.86, 3.83, 0.91, and 0.75 A/W, respectively. The measurement results of the fabricated photodetectors based on ZnO nanorods (NRs)/CdS heterostructures have shown a significant high sensitivity in the range of UV light, which can be useful for the application of UV detection.

Self-Powered Nanoscale Photodetectors

Novel self-powered nanoscale photodetectors that can work without an external power source, which have great application potential in next-generation nanodevices that operate wirelessly and independently, are being widely studied. This review aims to give a comprehensive summary of the state-of-the-art research results on self-powered nanoscale photodetectors. An introduction of recent progress on Schottky junction photodetectors is provided. Two types of Schottky junctions are discussed in detail: metal-semiconductor and semiconductor-graphene junctions. Next, recent developments of p-n junction photodetectors are highlighted, including homojunction and heterojunction photodetectors. Then, piezo-phototronic effect enhanced photodetection performances of Schottky junctions and p-n junctions are discussed. Then, significant results on the photoelectrochemical-cell-based photodetector and integrated self-powered nanosystem are presented, followed by a systematic comparison of different types of photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. The hope is that this review can provide valuable insights into the current status of self-powered photodetectors and spur new structure and device designs to further enhance photodetection performance.

Flexible Photodetectors Based on Novel Functional Materials

Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.

Hybrid Organic-Inorganic Perovskite Photodetectors

Hybrid organic-inorganic perovskite materials garner enormous attention for a wide range of optoelectronic devices. Due to their attractive optical and electrical properties including high optical absorption coefficient, high carrier mobility, and long carrier diffusion length, perovskites have opened up a great opportunity for high performance photodetectors. This review aims to give a comprehensive summary of the significant results on perovskite-based photodetectors, focusing on the relationship among the perovskite structures, device configurations, and photodetecting performances. An introduction of recent progress in various perovskite structure-based photodetectors is provided. The emphasis is placed on the correlation between the perovskite structure and the device performance. Next, recent developments of bandgap-tunable perovskite and hybrid photodetectors built from perovskite heterostructures are highlighted. Then, effective approaches to enhance the stability of perovskite photodetector are presented, followed by the introduction of flexible and self-powered perovskite photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. A comprehensive summary of the research status on perovskite photodetectors is hoped to push forward the development of this field.

Terminating DNA Tile Assembly with Nanostructured Caps

Precise control over the nucleation, growth, and termination of self-assembly processes is a fundamental tool for controlling product yield and assembly dynamics. Mechanisms for altering these processes programmatically could allow the use of simple components to self-assemble complex final products or to design processes allowing for dynamic assembly or reconfiguration. Here we use DNA tile self-assembly to develop general design principles for building complexes that can bind to a growing biomolecular assembly and terminate its growth by systematically characterizing how different DNA origami nanostructures interact with the growing ends of DNA tile nanotubes. We find that nanostructures that present binding interfaces for all of the binding sites on a growing facet can bind selectively to growing ends and stop growth when these interfaces are presented on either a rigid or floppy scaffold. In contrast, nucleation of nanotubes requires the presentation of binding sites in an arrangement that matches the shape of the structure's facet. As a result, it is possible to build nanostructures that can terminate the growth of existing nanotubes but cannot nucleate a new structure. The resulting design principles for constructing structures that direct nucleation and termination of the growth of one-dimensional nanostructures can also serve as a starting point for programmatically directing two- and three-dimensional crystallization processes using nanostructure design.

Data Mining for New Two- and One-Dimensional Weakly Bonded Solids and Lattice-Commensurate Heterostructures

Layered materials held together by weak interactions including van der Waals forces, such as graphite, have attracted interest for both technological applications and fundamental physics in their layered form and as an isolated single-layer. Only a few dozen single-layer van der Waals solids have been subject to considerable research focus, although there are likely to be many more that could have superior properties. To identify a broad spectrum of layered materials, we present a novel data mining algorithm that determines the dimensionality of weakly bonded subcomponents based on the atomic positions of bulk, three-dimensional crystal structures. By applying this algorithm to the Materials Project database of over 50,000 inorganic crystals, we identify 1173 two-dimensional layered materials and 487 materials that consist of weakly bonded one-dimensional molecular chains. This is an order of magnitude increase in the number of identified materials with most materials not known as two- or one-dimensional materials. Moreover, we discover 98 weakly bonded heterostructures of two-dimensional and one-dimensional subcomponents that are found within bulk materials, opening new possibilities for much-studied assembly of van der Waals heterostructures. Chemical families of materials, band gaps, and point groups for the materials identified in this work are presented. Point group and piezoelectricity in layered materials are also evaluated in single-layer forms. Three hundred and twenty-five of these materials are expected to have piezoelectric monolayers with a variety of forms of the piezoelectric tensor. This work significantly extends the scope of potential low-dimensional weakly bonded solids to be investigated.

Highly Wavelength-Selective Enhancement of Responsivity in Ag Nanoparticle-Modified ZnO UV Photodetector

We proposed and demonstrated Ag nanoparticles (NPs)-decorated ZnO photodetectors for UV light sensing. After decoration of their surface with random Ag NPs, the dark current density of ZnO UV photodetectors decreases obviously. Moreover, the device exhibits an obvious increase in peak responsivity at around 380 nm, which can be attributed to the narrow-band quadrupole plasmon resonance of Ag NPs in the UV range. Meanwhile, the responsivity at the other wavelengths decreases a lot. As a result, the response peak becomes more significant, and the response of the devices presents an excellent wavelength selectivity after covering with Ag NPs. The detailed mechanism for this phenomenon was explained. We believe that our findings would open a way to harness the high-order plasmon modes in the field of UV optoelectronic devices.

Fabrication of a silica/titania hollow nanorod and its electroresponsive activity

In this study, a 1D oriented hollow SiO₂/TiO₂ (HST) rod-like material was successfully fabricated via a sequential combination of sol–gel use, TiO₂ incorporation, and a sonication-mediated etching and redeposition method.

Scalable-Production, Self-Powered TiO2 Nanowell-Organic Hybrid UV Photodetectors with Tunable Performances

Hybrid inorganic-organic photoelectric devices draw considerable attention because of their unique features by combining the tunable functionality of organic molecules and the superior intrinsic carrier mobilities of inorganic semiconductors. An ordered thin layer of TiO₂ nanowells is formed in situ with shallow nanoconcave patterns without cracking with scalable production by a facile and economic strategy, and these layers are used as building blocks to construct hybrid UV photodetectors (PDs). Organic conducting polymers (polyaniline (PANI) with various morphologies) have been exploited as p-type materials, enabling tunable photodetection performances at zero bias. The thin layer of n-type TiO₂ nanowells is favorable for electron transport and light absorption with respect to their conventional nanotubular counterparts, while PANI acts as a hopping state or bridge to largely enhance the transition probability of the valence electrons in TiO₂ to its conduction band, resulting in an increase in photocurrent in a self-powered mode. In particular, the lowest polyaniline loading sample (TP1) exhibits the highest responsivity (3.6 mA·W^-1), largest on-off switching ratio (∼10³), excellent wavelength selectivity, fast response speed (3.8/30.7 ms), and good stability under 320 nm light illumination (0.56 mW·cm^-2) without an external energy supply. This work might be of great value in developing tunable UV photoresponse materials with respect to low cost and a large area for future energy-efficient optoelectronic devices.

Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices

Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, the conventional doping method by introducing impurities into the nanostructures suffers from the low efficiency, poor reliability, and damage to the host lattices. Alternatively, surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference. SCTD is particularly useful for low-dimensional nanostructures that possess high surface area and single-crystalline structure. The high reproducibility, as well as the high spatial selectivity, makes SCTD a promising technique to construct high-performance nanodevices based on low-dimensional nanostructures. Here, recent advances of SCTD are summarized systematically and critically, focusing on its potential applications in one- and two-dimensional nanostructures. Mechanisms as well as characterization techniques for the surface charge transfer are analyzed. We also highlight the progress in the construction of novel nanoelectronic and nano-optoelectronic devices via SCTD. Finally, the challenges and future research opportunities of the SCTD method are prospected.