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Vazquez R, Motovilova E, Winkler SA. Stretchable Sensor Materials Applicable to Radiofrequency Coil Design in Magnetic Resonance Imaging: A Review. SENSORS (BASEL, SWITZERLAND) 2024; 24:3390. [PMID: 38894182 PMCID: PMC11174967 DOI: 10.3390/s24113390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2024] [Revised: 05/19/2024] [Accepted: 05/21/2024] [Indexed: 06/21/2024]
Abstract
Wearable sensors are rapidly gaining influence in the diagnostics, monitoring, and treatment of disease, thereby improving patient outcomes. In this review, we aim to explore how these advances can be applied to magnetic resonance imaging (MRI). We begin by (i) introducing limitations in current flexible/stretchable RF coils and then move to the broader field of flexible sensor technology to identify translatable technologies. To this goal, we discuss (ii) emerging materials currently used for sensor substrates, (iii) stretchable conductive materials, (iv) pairing and matching of conductors with substrates, and (v) implementation of lumped elements such as capacitors. Applicable (vi) fabrication methods are presented, and the review concludes with a brief commentary on (vii) the implementation of the discussed sensor technologies in MRI coil applications. The main takeaway of our research is that a large body of work has led to exciting new sensor innovations allowing for stretchable wearables, but further exploration of materials and manufacturing techniques remains necessary, especially when applied to MRI diagnostics.
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Affiliation(s)
- Rigoberto Vazquez
- Department of Biomedical Engineering, Cornell University, Ithaca, NY 10065, USA
- Department of Radiology, Weill Cornell Medicine, New York, NY 10065, USA
| | | | - Simone Angela Winkler
- Department of Biomedical Engineering, Cornell University, Ithaca, NY 10065, USA
- Department of Radiology, Weill Cornell Medicine, New York, NY 10065, USA
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2
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Mishra B, Chen YM. All-Aerosol-Jet-Printed Carbon Nanotube Transistor with Cross-Linked Polymer Dielectrics. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4487. [PMID: 36558340 PMCID: PMC9785390 DOI: 10.3390/nano12244487] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Revised: 11/30/2022] [Accepted: 12/02/2022] [Indexed: 06/17/2023]
Abstract
The printability of reliable gate dielectrics and their influence on the stability of the device are some of the primary concerns regarding the practical application of printed transistors. Major ongoing research is focusing on the structural properties of dielectric materials and deposition parameters to reduce interface charge traps and hysteresis caused by the dielectric-semiconductor interface and dielectric bulk. This research focuses on improving the dielectric properties of a printed polymer material, cross-linked polyvinyl phenol (crPVP), by optimizing the cross-linking parameters as well as the aerosol jet printability. These improvements were then applied to the fabrication of completely printed carbon nanotube (CNT)-based thin-film transistors (TFT) to reduce the gate threshold voltage (Vth) and hysteresis in Vth during device operation. Finally, a fully aerosol-jet-printed CNT device was demonstrated using a 2:1 weight ratio of PVP with the cross-linker poly(melamine-co-formaldehyde) methylated (PMF) in crPVP as the dielectric material. This device shows significantly less hysteresis and can be operated at a gate threshold voltage as low as -4.8 V with an on/off ratio of more than 104.
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Affiliation(s)
- Bhagyashree Mishra
- Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, USA
| | - Yihong Maggie Chen
- Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, USA
- Ingram School of Engineering, Texas State University, San Marcos, TX 78666, USA
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3
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Divya M, Pradhan JR, Priyadarsini SS, Dasgupta S. High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202891. [PMID: 35843892 DOI: 10.1002/smll.202202891] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Revised: 06/25/2022] [Indexed: 06/15/2023]
Abstract
The major limitations of solution-processed oxide electronics include high process temperatures and the absence of necessary strain tolerance that would be essential for flexible electronic applications. Here, a combination of low temperature (<100 °C) curable indium oxide nanoparticle ink and a conductive silver nanoink, which are used to fabricate fully-printed narrow-channel thin film transistors (TFTs) on polyethylene terephthalate (PET) substrates, is proposed. The metal ink is printed onto the In2 O3 nanoparticulate channel to narrow the effective channel lengths down to the thickness of the In2 O3 layer and thereby obtain near-vertical transport across the semiconductor layer. The TFTs thus prepared show On/Off ratio ≈106 and simultaneous maximum current density of 172 µA µm-1 . Next, the depletion-load inverters fabricated on PET substrates demonstrate signal gain >200 and operation frequency >300 kHz at low operation voltage of VDD = 2 V. In addition, the near-vertical transport across the semiconductor layer is found to be largely strain tolerant with insignificant change in the TFT and inverter performance observed under bending fatigue tests performed down to a bending radius of 1.5 mm, which translates to a strain value of 5%. The devices are also found to be robust against atmospheric exposure when remeasured after a month.
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Affiliation(s)
- Mitta Divya
- Department of Materials Engineering, Indian Institute of Science (IISc), Bangalore, 560012, India
| | - Jyoti Ranjan Pradhan
- Department of Materials Engineering, Indian Institute of Science (IISc), Bangalore, 560012, India
| | | | - Subho Dasgupta
- Department of Materials Engineering, Indian Institute of Science (IISc), Bangalore, 560012, India
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4
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Portilla L, Zhao J, Wang Y, Sun L, Li F, Robin M, Wei M, Cui Z, Occhipinti LG, Anthopoulos TD, Pecunia V. Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics. ACS NANO 2020; 14:14036-14046. [PMID: 32924510 DOI: 10.1021/acsnano.0c06619] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The development of ultralow-power and easy-to-fabricate electronics with potential for large-scale circuit integration (i.e., complementary or complementary-like) is an outstanding challenge for emerging off-the-grid applications, e.g., remote sensing, "place-and-forget", and the Internet of Things. Herein we address this challenge through the development of ambipolar transistors relying on solution-processed polymer-sorted semiconducting carbon nanotube networks (sc-SWCNTNs) operating in the deep-subthreshold regime. Application of self-assembled monolayers at the active channel interface enables the fine-tuning of sc-SWCNTN transistors toward well-balanced ambipolar deep-subthreshold characteristics. The significance of these features is assessed by exploring the applicability of such transistors to complementary-like integrated circuits, with respect to which the impact of the subthreshold slope and flatband voltage on voltage and power requirements is studied experimentally and theoretically. As demonstrated with inverter and NAND gates, the ambipolar deep-subthreshold sc-SWCNTN approach enables digital circuits with complementary-like operation and characteristics including wide noise margins and ultralow operational voltages (≤0.5 V), while exhibiting record-low power consumption (≤1 pW/μm). Among thin-film transistor technologies with minimal material complexity, our approach achieves the lowest energy and power dissipation figures reported to date, which are compatible with and highly attractive for emerging off-the-grid applications.
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Affiliation(s)
- Luis Portilla
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Yan Wang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Liping Sun
- iHuman institute, ShanghaiTech University, No. 393 Middle Huaxia Road, Shanghai 201210, China
| | - Fengzhu Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
| | - Malo Robin
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Miaomiao Wei
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu 215123, China
| | - Luigi G Occhipinti
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955-6900, Saudi Arabia
| | - Vincenzo Pecunia
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu 215123, China
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5
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Sun Y, Dong T, Yu L, Xu J, Chen K. Planar Growth, Integration, and Applications of Semiconducting Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903945. [PMID: 31746050 DOI: 10.1002/adma.201903945] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2019] [Revised: 10/05/2019] [Indexed: 06/10/2023]
Abstract
Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.
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Affiliation(s)
- Ying Sun
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Taige Dong
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
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Devabharathi N, Mondal SK, Dasgupta S. Inkjet-printed co-continuous mesoporous oxides for high-current power transistors. NANOSCALE 2019; 11:13731-13740. [PMID: 31310254 DOI: 10.1039/c9nr04876f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Limited printing resolution has always been a major hindrance for printed electronics; irrespective of the high mobility demonstrated by solution-processed semiconductors, long-channel printed field-effect transistors (FETs) have demonstrated low On-state conductance and switching speeds. Although various concepts have been proposed to obtain narrow-channel printed FETs, the actual demonstration of high On-currents/channel conductance has been rare. In this context, herein, we report a general recipe to print co-continuous mesoporous structures with high surface-to-volume ratios for the first time for a large range of metallic and semiconducting oxides, both n- and p-type; next, by exploiting an innovative transistor architecture by printing an additional silver layer on top of the printed porous channel, we reduced the necessary length of electronic transport through the semiconductor material to a short vertical distance of the order of a few tens of nanometres. Basically, when a composite solid polymer electrolyte was used as a gate insulator, we essentially obtained channel length-independent transport with the unprecedented On-current of 67 μA μm-1 and transconductance of 143 μS μm-1 at the supply voltage of only 0.5 V. Among others, one may foresee the usage of these devices in high power switches and for drawing power from batteries in all-printed electronic circuits.
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Affiliation(s)
- Nehru Devabharathi
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bangalore 560012, Karnataka, India.
| | - Sandeep Kumar Mondal
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bangalore 560012, Karnataka, India.
| | - Subho Dasgupta
- Department of Materials Engineering, Indian Institute of Science (IISc), C V Raman Avenue, Bangalore 560012, Karnataka, India.
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7
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Abstract
It is well known that organic thin film transistor (OTFT) parameters can be shifted depending on the geometry of the device. In this work, we present two different transistor geometries, interdigitated and Corbino, which provide differences in the key parameters of devices such as threshold voltage (VT), although they share the same materials and fabrication procedure. Furthermore, it is proven that Corbino geometries are good candidates for saturation-mode current driven devices, as they provide higher ION/IOFF ratios. By taking advantage of these differences, circuit design can be improved and the proposed geometries are, therefore, particularly suited for the implementation of logic gates. The results demonstrate a high gain and low hysteresis organic monotype inverter circuit with full swing voltage at the output.
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8
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Mo L, Guo Z, Yang L, Zhang Q, Fang Y, Xin Z, Chen Z, Hu K, Han L, Li L. Silver Nanoparticles Based Ink with Moderate Sintering in Flexible and Printed Electronics. Int J Mol Sci 2019; 20:E2124. [PMID: 31036787 PMCID: PMC6539082 DOI: 10.3390/ijms20092124] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2019] [Revised: 03/27/2019] [Accepted: 04/07/2019] [Indexed: 12/28/2022] Open
Abstract
Printed electronics on flexible substrates has attracted tremendous research interest research thanks its low cost, large area production capability and environmentally friendly advantages. Optimal characteristics of silver nanoparticles (Ag NPs) based inks are crucial for ink rheology, printing, post-print treatment, and performance of the printed electronics devices. In this review, the methods and mechanisms for obtaining Ag NPs based inks that are highly conductive under moderate sintering conditions are summarized. These characteristics are particularly important when printed on temperature sensitive substrates that cannot withstand sintering of high temperature. Strategies to tailor the protective agents capping on the surface of Ag NPs, in order to optimize the sizes and shapes of Ag NPs as well as to modify the substrate surface, are presented. Different (emerging) sintering technologies are also discussed, including photonic sintering, electrical sintering, plasma sintering, microwave sintering, etc. Finally, applications of the Ag NPs based ink in transparent conductive film (TCF), thin film transistor (TFT), biosensor, radio frequency identification (RFID) antenna, stretchable electronics and their perspectives on flexible and printed electronics are presented.
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Affiliation(s)
- Lixin Mo
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Zhenxin Guo
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Li Yang
- Research Institutes of Sweden (RISE), RISE Bioeconomy, Drottning Kristinas väg 61, 11428 Stockholm, Sweden.
| | - Qingqing Zhang
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Yi Fang
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Zhiqing Xin
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Zheng Chen
- Shine Optoelectronics (Kunshan) Co., Ltd., Shenzhou Industrial Park, No. 33 Yuanfeng Rd, Kunshan 215300, China.
| | - Kun Hu
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Lu Han
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Luhai Li
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
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Chung S, Cho K, Lee T. Recent Progress in Inkjet-Printed Thin-Film Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1801445. [PMID: 30937255 PMCID: PMC6425446 DOI: 10.1002/advs.201801445] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2018] [Revised: 11/25/2018] [Indexed: 05/19/2023]
Abstract
Drop-on-demand inkjet printing is one of the most attractive techniques from a manufacturing perspective due to the possibility of fabrication from a digital layout at ambient conditions, thus leading to great opportunities for the realization of low-cost and flexible thin-film devices. Over the past decades, a variety of inkjet-printed applications including thin-film transistors (TFTs), radio-frequency identification devices, sensors, and displays have been explored. In particular, many research groups have made great efforts to realize high-performance TFTs, for application as potential driving components of ubiquitous wearable electronics. Although there are still challenges to enable the commercialization of printed TFTs beyond laboratory-scale applications, the field of printed TFTs still attracts significant attention, with remarkable developments in soluble materials and printing methodology. Here, recent progress in printing-based TFTs is presented from materials to applications. Significant efforts to improve the electrical performance and device-yield of printed TFTs to match those of counterparts fabricated using conventional deposition or photolithography methods are highlighted. Moreover, emerging low-dimension printable semiconductors, including carbon nanotubes and transition metal dichalcogenides as well as mature semiconductors, and new-concept printed switching devices, are also discussed.
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Affiliation(s)
- Seungjun Chung
- Photo‐Electronic Hybrids Research CenterKorea Institute of Science and TechnologyHwarang‐ro 14‐gil 5Seongbuk‐guSeoul02792South Korea
| | - Kyungjune Cho
- Department of Physics and Astronomy, and Institute of Applied PhysicsSeoul National UniversitySeoul08826South Korea
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied PhysicsSeoul National UniversitySeoul08826South Korea
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Gu W, Yuan W, Zhong T, Wu X, Zhou C, Lin J, Cui Z. Fast near infrared sintering of silver nanoparticle ink and applications for flexible hybrid circuits. RSC Adv 2018; 8:30215-30222. [PMID: 35546861 PMCID: PMC9085410 DOI: 10.1039/c8ra04468f] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2018] [Accepted: 08/12/2018] [Indexed: 12/03/2022] Open
Abstract
Near infrared(NIR) sintering technology is a photonic sintering approach for metal nanoparticle inks, which can selectively sinter metal nanoparticle inks more quickly and efficiently, and it is also compatible with high-throughput manufacturing processes. In this paper, silver nanoparticle (AgNP) ink sintered by near infrared light at a peak wavelength of 1100 nm was investigated. After only 8 seconds of exposure to NIR irradiation, resistivity of 2.78 μΩ cm was achieved for thin films printed with AgNP ink, which was only 1.7-fold higher than that of bulk silver (1.59 μΩ cm). The structure of the sintered silver film was examined by sintering printed silver nanoparticle ink samples having different thicknesses, and the results showed that AgNPs were homogeneously coalesced throughout the cross-sections of films, indicating the formation of dense silver layers. Furthermore, the morphology and electrical resistivity of the sintered AgNP film dried by NIR were compared with those of the film dried on a hot plate. It was found that drying conditions with a relatively long drying time rather than the drying temperature contributed to the reduction of voids in the film and to the improvement in its density and electrical performance. Finally, a flexible hybrid circuit integrated with a microcontroller chip on a poly(ethylene terephthalate)(PET) substrate was fabricated by screen printing with AgNP ink for interconnects, and its surface roughness and flexibility were investigated.
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Affiliation(s)
- Weibing Gu
- University of Chinese Academy of Sciences China
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences(SINANO) Suzhou China 215123
| | - Wei Yuan
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences(SINANO) Suzhou China 215123
| | - Tao Zhong
- College of Information Engineering. China Jiliang University (CJLU) Hangzhou 310018 China
| | - Xinzhou Wu
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences(SINANO) Suzhou China 215123
| | - Chunshan Zhou
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences(SINANO) Suzhou China 215123
| | - Jian Lin
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences(SINANO) Suzhou China 215123
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences(SINANO) Suzhou China 215123
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11
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Tong S, Sun J, Yang J. Printed Thin-Film Transistors: Research from China. ACS APPLIED MATERIALS & INTERFACES 2018; 10:25902-25924. [PMID: 29494132 DOI: 10.1021/acsami.7b16413] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Thin-film transistors (TFTs) have experienced tremendous development during the past decades and show great promising applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFT components including semiconductors, dielectrics and electrodes, as well as fully printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed.
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Affiliation(s)
- Sichao Tong
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics , Central South University , Changsha 410083 , Hunan , China
| | - Jia Sun
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics , Central South University , Changsha 410083 , Hunan , China
| | - Junliang Yang
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics , Central South University , Changsha 410083 , Hunan , China
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Garlapati SK, Divya M, Breitung B, Kruk R, Hahn H, Dasgupta S. Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707600. [PMID: 29952112 DOI: 10.1002/adma.201707600] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2017] [Revised: 03/20/2018] [Indexed: 06/08/2023]
Abstract
Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.
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Affiliation(s)
- Suresh Kumar Garlapati
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Mitta Divya
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Ben Breitung
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Robert Kruk
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, ,64287, Darmstadt, Germany
| | - Subho Dasgupta
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
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13
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Rullyani C, Sung CF, Lin HC, Chu CW. Flexible Organic Thin Film Transistors Incorporating a Biodegradable CO 2-Based Polymer as the Substrate and Dielectric Material. Sci Rep 2018; 8:8146. [PMID: 29802298 PMCID: PMC5970150 DOI: 10.1038/s41598-018-26585-0] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2018] [Accepted: 05/15/2018] [Indexed: 01/19/2023] Open
Abstract
Employing CO2-based polymer in electronic applications should boost the consumption of CO2 feedstocks and provide the potential for non-permanent CO2 storage. In this study, polypropylene carbonate (PPC) is utilized as a dielectric and substrate material for organic thin film transistors (OTFTs) and organic inverter. The PPC dielectric film exhibits a surface energy of 47 mN m−1, a dielectric constant of 3, a leakage current density of less than 10−6 A cm−2, and excellent compatibility with pentacene and PTCDI-C8 organic semiconductors. Bottom-gate top-contact OTFTs are fabricated using PPC as a dielectric; they exhibits good electrical performance at an operating voltage of 60 V, with electron and hole mobilities of 0.14 and 0.026 cm2 V−1 s−1, and on-to-off ratios of 105 and 103, respectively. The fabricated p- and n-type transistors were connected to form a complementary inverter that operated at supply voltages of 20 V with high and low noise margins of 85 and 69%, respectively. The suitability of PPC as a substrate is demonstrated through the preparation of PPC sheets by casting method. The fabricated PPC sheets has a transparency of 92% and acceptable mechanical properties, yet they biodegraded rapidly through enzymatic degradation when using the lipase from Rhizhopus oryzae.
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Affiliation(s)
- Cut Rullyani
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan (ROC)
| | - Chao-Feng Sung
- Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu, 300, Taiwan (ROC)
| | - Hong-Cheu Lin
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan (ROC).
| | - Chih-Wei Chu
- Research Center for Applied Science Academia Sinica, Taipei, 115, Taiwan (ROC). .,College of Engineering, Chang Gung University, Taoyuan, 333, Taiwan (ROC).
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14
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Liu T, Zhao J, Xu W, Dou J, Zhao X, Deng W, Wei C, Xu W, Guo W, Su W, Jie J, Cui Z. Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage. NANOSCALE 2018; 10:614-622. [PMID: 29235605 DOI: 10.1039/c7nr07334h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Fabrication and application of hybrid functional circuits have become a hot research topic in the field of printed electronics. In this study, a novel flexible diode-transistor logic (DTL) driving circuit is proposed, which was fabricated based on a light emitting diode (LED) integrated with printed high-performance single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs). The LED, which is made of AlGaInP on GaAs, is commercial off-the-shelf, which could generate free electrical charges upon white light illumination. Printed top-gate TFTs were made on a PET substrate by inkjet printing high purity semiconducting SWCNTs (sc-SWCNTs) ink as the semiconductor channel materials, together with printed silver ink as the top-gate electrode and printed poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA/ODA) as gate dielectric layer. The LED, which is connected to the gate electrode of the TFT, generated electrical charge when illuminated, resulting in biased gate voltage to control the TFT from "ON" status to "OFF" status. The TFTs with a PMDA/ODA gate dielectric exhibited low operating voltages of ±1 V, a small subthreshold swing of 62-105 mV dec-1 and ON/OFF ratio of 106, which enabled DTL driving circuits to have high ON currents, high dark-to-bright current ratios (up to 105) and good stability under repeated white light illumination. As an application, the flexible DTL driving circuit was connected to external quantum dot LEDs (QLEDs), demonstrating its ability to drive and to control the QLED.
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Affiliation(s)
- Tingting Liu
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
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15
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Abstract
Owing to their capability of bypassing conventional high-priced and inflexible silicon based electronics to manufacture a variety of devices on flexible substrates by using large-scale and high-volume printing techniques, printed electronics (PE) have attracted increasing attention in the field of manufacturing industry for electronic devices. This simple and cost-effective approach could enhance current methods of constructing a patterned surface for nanomaterials and offer opportunities for developing fully-printed functional devices, especially offering the possibility of ubiquitous low-cost and flexible devices. This review presents a summary of work to date on the inorganic nanomaterials involved in PE applications, focused on the utilization of inorganic nanomaterials-based inks in the successful preparation of printed conductive patterns, electrodes, sensors, thin film transistors (TFTs) and other micro-/nanoscale devices. The printing techniques, sintering methods and printability of functional inks with their associated challenges are discussed, and we look forward so you can glimpse the future of PE applications.
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Affiliation(s)
- Wei Wu
- Laboratory of Printable Functional Nanomaterials and Printed Electronics, School of Printing and Packaging, Wuhan University, Wuhan 430072, P. R. China.
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16
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Xu Q, Zhao J, Pecunia V, Xu W, Zhou C, Dou J, Gu W, Lin J, Mo L, Zhao Y, Cui Z. Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters. ACS APPLIED MATERIALS & INTERFACES 2017; 9:12750-12758. [PMID: 28337913 DOI: 10.1021/acsami.7b01666] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The fabrication of printed high-performance and environmentally stable n-type single-walled carbon nanotube (SWCNT) transistors and their integration into complementary (i.e., complementary metal-oxide-semiconductor, CMOS) circuits are widely recognized as key to achieving the full potential of carbon nanotube electronics. Here, we report a simple, efficient, and robust method to convert the polarity of SWCNT thin-film transistors (TFTs) using cheap and readily available ethanolamine as an electron doping agent. Printed p-type bottom-gate SWCNT TFTs can be selectively converted into n-type by deposition of ethanolamine inks on the transistor active region via aerosol jet printing. Resulted n-type TFTs show excellent electrical properties with an on/off ratio of 106, effective mobility up to 30 cm2 V-1 s-1, small hysteresis, and small subthreshold swing (90-140 mV dec-1), which are superior compared to the original p-type SWCNT devices. The n-type SWCNT TFTs also show good stability in air, and any deterioration of performance due to shelf storage can be fully recovered by a short low-temperature annealing. The easy polarity conversion process allows construction of CMOS circuitry. As an example, CMOS inverters were fabricated using printed p-type and n-type TFTs and exhibited a large noise margin (50 and 103% of 1/2 Vdd = 1 V) and a voltage gain as high as 30 (at Vdd = 1 V). Additionally, the CMOS inverters show full rail-to-rail output voltage swing and low power dissipation (0.1 μW at Vdd = 1 V). The new method paves the way to construct fully functional complex CMOS circuitry by printed TFTs.
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Affiliation(s)
- Qiqi Xu
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
- Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences , Shanghai 200032, P.R. China
- School of Physical Science and Technology, ShanghaiTech University , Shanghai 201210, P.R. China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Vincenzo Pecunia
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, P.R. China
| | - Wenya Xu
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Chunshan Zhou
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Junyan Dou
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Weibing Gu
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Jian Lin
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Lixin Mo
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication , No.1 Xinghua Street, Daxing District, Beijing 102600, P.R. China
| | - Yanfei Zhao
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
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17
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Abstract
Wearable technology has attracted significant public attention and has generated huge societal and economic impact, leading to changes of both personal lifestyles and formats of healthcare. An important type of devices in wearable technology is flexible and stretchable skin sensors used primarily for biophysiological signal sensing and biomolecule analysis on skin. These sensors offer mechanical compatibility to human skin and maximum compliance to skin morphology and motion, demonstrating great potential as promising alternatives to current wearable electronic devices based on rigid substrates and packages. The mechanisms behind the design and applications of these sensors are numerous, involving profound knowledge about the physical and chemical properties of the sensors and the skin. The corresponding materials are diverse, featuring thin elastic films and unique stretchable structures based on traditional hard or ductile materials. In addition, the fabrication techniques that range from complementary metal-oxide semiconductor (CMOS) fabrication to innovative additive manufacturing have led to various sensor formats. This paper reviews mechanisms, materials, fabrication techniques, and representative applications of flexible and stretchable skin sensors, and provides perspective of future trends of the sensors in improving biomedical sensing, human machine interfacing, and quality of life.
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18
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Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors. Sci Rep 2017; 7:39627. [PMID: 28145438 PMCID: PMC5286420 DOI: 10.1038/srep39627] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2016] [Accepted: 11/24/2016] [Indexed: 01/20/2023] Open
Abstract
Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.
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19
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Cui Z. Nanoscale Pattern Transfer by Deposition. NANOFABRICATION 2017. [DOI: 10.1007/978-3-319-39361-2_8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022] Open
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20
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Cao X, Lau C, Liu Y, Wu F, Gui H, Liu Q, Ma Y, Wan H, Amer MR, Zhou C. Fully Screen-Printed, Large-Area, and Flexible Active-Matrix Electrochromic Displays Using Carbon Nanotube Thin-Film Transistors. ACS NANO 2016; 10:9816-9822. [PMID: 27749046 DOI: 10.1021/acsnano.6b05368] [Citation(s) in RCA: 78] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed electronics due to their advantageous electrical and mechanical properties, intrinsic printability in solution, and desirable stability in air. However, fully printed, large-area, high-performance, and flexible carbon nanotube active-matrix backplanes are still difficult to realize for future displays and sensing applications. Here, we report fully screen-printed active-matrix electrochromic displays employing carbon nanotube thin-film transistors. Our fully printed backplane shows high electrical performance with mobility of 3.92 ± 1.08 cm2 V-1 s-1, on-off current ratio Ion/Ioff ∼ 104, and good uniformity. The printed backplane was then monolithically integrated with an array of printed electrochromic pixels, resulting in an entirely screen-printed active-matrix electrochromic display (AMECD) with good switching characteristics, facile manufacturing, and long-term stability. Overall, our fully screen-printed AMECD is promising for the mass production of large-area and low-cost flexible displays for applications such as disposable tags, medical electronics, and smart home appliances.
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Affiliation(s)
| | | | | | | | | | | | | | | | - Moh R Amer
- Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States
- Center of Excellence for Green Nanotechnologies, King Abdulaziz City for Science and Technology , Riyadh 12371, Saudi Arabia
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21
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Zhang X, Zhao J, Dou J, Tange M, Xu W, Mo L, Xie J, Xu W, Ma C, Okazaki T, Cui Z. Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:5066-5073. [PMID: 27152874 DOI: 10.1002/smll.201600452] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2016] [Revised: 03/18/2016] [Indexed: 06/05/2023]
Abstract
P-type and n-type top-gate carbon nanotube thin-film transistors (TFTs) can be selectively and simultaneously fabricated on the same polyethylene terephthalate (PET) substrate by tuning the types of polymer-sorted semiconducting single-walled carbon nanotube (sc-SWCNT) inks, along with low temperature growth of HfO2 thin films as shared dielectric layers. Both the p-type and n-type TFTs show good electrical properties with on/off ratio of ≈105 , mobility of ≈15 cm2 V-1 s-1 , and small hysteresis. Complementary metal oxide semiconductor (CMOS)-like logic gates and circuits based on as-prepared p-type and n-type TFTs have been achieved. Flexible CMOS-like inverters exhibit large noise margin of 84% at low voltage (1/2 Vdd = 1.5 V) and maximum voltage gain of 30 at Vdd of 1.5 V and low power consumption of 0.1 μW. Both of the noise margin and voltage gain are one of the best values reported for flexible CMOS-like inverters at Vdd less than 2 V. The printed CMOS-like inverters work well at 10 kHz with 2% voltage loss and delay time of ≈15 μs. A 3-stage ring oscillator has also been demonstrated on PET substrates and the oscillation frequency of 3.3 kHz at Vdd of 1 V is achieved.
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Affiliation(s)
- Xiang Zhang
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, P. R. China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China.
| | - Junyan Dou
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Masayoshi Tange
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 3058565, Japan
| | - Weiwei Xu
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, P. R. China
| | - Lixin Mo
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing, 102600, P. R. China
| | - Jianjun Xie
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, P. R. China
| | - Wenya Xu
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Changqi Ma
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Toshiya Okazaki
- CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 3058565, Japan
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China.
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22
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Chen B, Zhang P, Ding L, Han J, Qiu S, Li Q, Zhang Z, Peng LM. Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits. NANO LETTERS 2016; 16:5120-8. [PMID: 27459084 DOI: 10.1021/acs.nanolett.6b02046] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.
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Affiliation(s)
- Bingyan Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of electronics, Peking University , Beijing 100871, China
| | - Panpan Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of electronics, Peking University , Beijing 100871, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of electronics, Peking University , Beijing 100871, China
| | - Jie Han
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Suzhou, 215123, China
| | - Song Qiu
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Suzhou, 215123, China
| | - Qingwen Li
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Suzhou, 215123, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of electronics, Peking University , Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of electronics, Peking University , Beijing 100871, China
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23
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Lee D, Yoon J, Lee J, Lee BH, Seol ML, Bae H, Jeon SB, Seong H, Im SG, Choi SJ, Choi YK. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric. Sci Rep 2016; 6:26121. [PMID: 27184121 PMCID: PMC4869014 DOI: 10.1038/srep26121] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2016] [Accepted: 04/27/2016] [Indexed: 11/09/2022] Open
Abstract
Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm(2) V(-1) sec(-)1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 10(4)), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.
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Affiliation(s)
- Dongil Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Jinsu Yoon
- School of Electrical Engineering, Kookmin University, Jeongneung-dong, Seongbuk-gu, Seoul, 02707, Republic of Korea
| | - Juhee Lee
- School of Electrical Engineering, Kookmin University, Jeongneung-dong, Seongbuk-gu, Seoul, 02707, Republic of Korea
| | - Byung-Hyun Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Myeong-Lok Seol
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Hagyoul Bae
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Seung-Bae Jeon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Hyejeong Seong
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.,Graphene Research Center, KI for Nanocentury, KAIST, Daejeon, 34141, South Korea
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.,Graphene Research Center, KI for Nanocentury, KAIST, Daejeon, 34141, South Korea
| | - Sung-Jin Choi
- School of Electrical Engineering, Kookmin University, Jeongneung-dong, Seongbuk-gu, Seoul, 02707, Republic of Korea
| | - Yang-Kyu Choi
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
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24
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Rother M, Schießl SP, Zakharko Y, Gannott F, Zaumseil J. Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes. ACS APPLIED MATERIALS & INTERFACES 2016; 8:5571-9. [PMID: 26867006 PMCID: PMC4778158 DOI: 10.1021/acsami.6b00074] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2016] [Accepted: 02/11/2016] [Indexed: 05/02/2023]
Abstract
The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification.
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Affiliation(s)
- Marcel Rother
- Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, D-91058 Erlangen, Germany
- Institute for Physical Chemistry, Universität Heidelberg, D-69120 Heidelberg, Germany
| | - Stefan P. Schießl
- Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, D-91058 Erlangen, Germany
- Institute for Physical Chemistry, Universität Heidelberg, D-69120 Heidelberg, Germany
| | - Yuriy Zakharko
- Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, D-91058 Erlangen, Germany
- Institute for Physical Chemistry, Universität Heidelberg, D-69120 Heidelberg, Germany
| | - Florentina Gannott
- Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, D-91058 Erlangen, Germany
- Institute for Physical Chemistry, Universität Heidelberg, D-69120 Heidelberg, Germany
| | - Jana Zaumseil
- Institute for Physical Chemistry, Universität Heidelberg, D-69120 Heidelberg, Germany
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25
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Xu W, Dou J, Zhao J, Tan H, Ye J, Tange M, Gao W, Xu W, Zhang X, Guo W, Ma C, Okazaki T, Zhang K, Cui Z. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer. NANOSCALE 2016; 8:4588-4598. [PMID: 26847814 DOI: 10.1039/c6nr00015k] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.
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Affiliation(s)
- Wenya Xu
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Junyan Dou
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Hongwei Tan
- College of Chemistry, Beijing Normal University, Beijing, 100875, PR China
| | - Jun Ye
- Institute of High Performance Computing, Agency for Science, Technology and Research, 138632, Singapore
| | - Masayoshi Tange
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
| | - Wei Gao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Weiwei Xu
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. and School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, PR China
| | - Xiang Zhang
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. and School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, PR China
| | - Wenrui Guo
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Changqi Ma
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Toshiya Okazaki
- CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
| | - Kai Zhang
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
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Xu W, Dou J, Zhao J, Tan H, Ye J, Tange M, Gao W, Xu W, Zhang X, Guo W, Ma C, Okazaki T, Zhang K, Cui Z. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer. NANOSCALE 2016; 8:4588-4598. [PMID: 26847814 DOI: 10.1016/j.carbon.2016.07.035] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.
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Affiliation(s)
- Wenya Xu
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Junyan Dou
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Hongwei Tan
- College of Chemistry, Beijing Normal University, Beijing, 100875, PR China
| | - Jun Ye
- Institute of High Performance Computing, Agency for Science, Technology and Research, 138632, Singapore
| | - Masayoshi Tange
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
| | - Wei Gao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Weiwei Xu
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. and School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, PR China
| | - Xiang Zhang
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. and School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, PR China
| | - Wenrui Guo
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Changqi Ma
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Toshiya Okazaki
- CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
| | - Kai Zhang
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
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Zhao Y, Li Q, Xiao X, Li G, Jin Y, Jiang K, Wang J, Fan S. Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks. ACS NANO 2016; 10:2193-2202. [PMID: 26768020 DOI: 10.1021/acsnano.5b06726] [Citation(s) in RCA: 30] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices.
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Affiliation(s)
- Yudan Zhao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Qunqing Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Xiaoyang Xiao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Guanhong Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Yuanhao Jin
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Kaili Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Jiaping Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
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Kim B, Geier ML, Hersam MC, Dodabalapur A. Inkjet Printed Circuits on Flexible and Rigid Substrates Based on Ambipolar Carbon Nanotubes with High Operational Stability. ACS APPLIED MATERIALS & INTERFACES 2015; 7:27654-27660. [PMID: 26619154 DOI: 10.1021/acsami.5b07727] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Inkjet printed ambipolar transistors and circuits with high operational stability are demonstrated on flexible and rigid substrates employing semiconducting single-walled carbon nanotubes (SWCNTs). All patterns, which include electrodes, semiconductors, and vias, are realized by inkjet printing without the use of rigid physical masks and photolithography. An Al2O3 layer deposited on devices by atomic layer deposition (ALD) transforms p-type SWCNT thin-film transistors (TFTs) into ambipolar SWCNT TFTs and encapsulates them effectively. The ambipolar SWCNT TFTs have balanced electron and hole mobilities, which facilitates their use in multicomponent circuits. For example, a variety of logic gates and ring oscillators are demonstrated based on the ambipolar TFTs. The three-stage ring oscillator operates continuously for longer than 80 h under ambient conditions with only slight deviations in oscillation frequency. The successful demonstration of ambipolar devices by inkjet printing will enable a new class of circuits that utilize n-channel, p-channel, and ambipolar circuit components.
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Affiliation(s)
- Bongjun Kim
- Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States
| | - Michael L Geier
- Department of Materials Science and Engineering and Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering and Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Ananth Dodabalapur
- Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States
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Cai L, Wang C. Carbon Nanotube Flexible and Stretchable Electronics. NANOSCALE RESEARCH LETTERS 2015; 10:1013. [PMID: 26264684 PMCID: PMC4531887 DOI: 10.1186/s11671-015-1013-1] [Citation(s) in RCA: 26] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2015] [Accepted: 07/13/2015] [Indexed: 05/27/2023]
Abstract
The low-cost and large-area manufacturing of flexible and stretchable electronics using printing processes could radically change people's perspectives on electronics and substantially expand the spectrum of potential applications. Examples range from personalized wearable electronics to large-area smart wallpapers and from interactive bio-inspired robots to implantable health/medical apparatus. Owing to its one-dimensional structure and superior electrical property, carbon nanotube is one of the most promising material platforms for flexible and stretchable electronics. Here in this paper, we review the recent progress in this field. Applications of single-wall carbon nanotube networks as channel semiconductor in flexible thin-film transistors and integrated circuits, as stretchable conductors in various sensors, and as channel material in stretchable transistors will be discussed. Lastly, state-of-the-art advancement on printing process, which is ideal for large-scale fabrication of flexible and stretchable electronics, will also be reviewed in detail.
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Affiliation(s)
- Le Cai
- Department of Electrical and Computing Engineering, Michigan State University, East Lansing, MI 48824 USA
| | - Chuan Wang
- Department of Electrical and Computing Engineering, Michigan State University, East Lansing, MI 48824 USA
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