Enhanced thermoelectric performance of copper iodide particles/nanowires composite in the low-temperature range

Thermoelectric (TE) energy harvesting presents a viable method for reducing energy waste by transforming waste thermal energy into electricity. In this study, we fabricated copper iodide (CuI) composites using synthesized CuI nanowires (NWs) and particles to enhance TE performance in the low-temperature range. The Seebeck coefficient (S) was notably higher when a combination of CuI particles and NWs was used, reaching a maximum S of 1614.24 μV K-1 with a 60% NWs content at RT. Electrical conductivity (σ) exhibited an inverse correlation with S, with higher values detected when either particles or NWs were used only. The highest power factor (PF) of 128.44 μW m-1K-2 was recorded at RT with 60% NWs content, demonstrating improved TE performance. Thermal conductivity (κ) diminished when different material structures were employed, enhancing phonon scattering. The maximum figure of merit (ZT) achieved was ∼0.14 with 60% NWs content at 425 K, indicating the potential of this method for improving TE performance. This study offers valuable insights into optimizing TE performance using CuI composites, proposing a promising strategy for energy harvesting from low-temperature sources.

Band Engineering Through Pb-Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4

Developing cost-effective and high-performance thermoelectric (TE) materials to assemble efficient TE devices presents a multitude of challenges and opportunities. Cu3SbSe4 is a promising p-type TE material based on relatively earth abundant elements. However, the challenge lies in its poor electrical conductivity. Herein, an efficient and scalable solution-based approach is developed to synthesize high-quality Cu3SbSe4 nanocrystals doped with Pb at the Sb site. After ligand displacement and annealing treatments, the dried powders are consolidated into dense pellets, and their TE properties are investigated. Pb doping effectively increases the charge carrier concentration, resulting in a significant increase in electrical conductivity, while the Seebeck coefficients remain consistently high. The calculated band structure shows that Pb doping induces band convergence, thereby increasing the effective mass. Furthermore, the large ionic radius of Pb2+ results in the generation of additional point and plane defects and interphases, dramatically enhancing phonon scattering, which significantly decreases the lattice thermal conductivity at high temperatures. Overall, a maximum figure of merit (zTmax) ≈ 0.85 at 653 K is obtained in Cu3Sb0.97Pb0.03Se4. This represents a 1.6-fold increase compared to the undoped sample and exceeds most doped Cu3SbSe4-based materials produced by solid-state, demonstrating advantages of versatility and cost-effectiveness using a solution-based technology.

Unveiling Crucial Chemical Processing Parameters Influencing the Performance of Solution-Processed Inorganic Thermoelectric Materials

Production of thermoelectric materials from solution-processed particles involves the synthesis of particles, their purification and densification into pelletized material. Chemical changes that occur during each one of these steps render them performance determining. Particularly the purification steps, bypassed in conventional solid-state synthesis, are the cause for large discrepancies among similar solution-processed materials. In present work, the investigation focuses on a water-based surfactant free solution synthesis of SnSe, a highly relevant thermoelectric material. We show and rationalize that the number of leaching steps, purification solvent, annealing, and annealing atmosphere have significant influence on the Sn : Se ratio and impurity content in the powder. Such compositional changes that are undetectable by conventional characterization techniques lead to distinct consolidated materials with different types and concentration of defects. Additionally, the profound effect on their transport properties is demonstrated. We emphasize that understanding the chemistry and identifying key chemical species and their role throughout the process is paramount for optimizing material performance. Furthermore, we aim to demonstrate the necessity of comprehensive reporting of these steps as a standard practice to ensure material reproducibility.

High Thermoelectric Performance in 2D Sb2Te3 and Bi2Te3 Nanoplate Composites Enabled by Energy Carrier Filtering and Low Thermal Conductivity

Thermoelectrics are an important class of materials with great potential in alternative energy applications. In this study, two-dimensional (2D) nanoplates of the layered chalcogenides, Sb2Te3 and Bi2Te3, are synthesized and composites of the two are investigated for their thermoelectric properties. The two materials, Sb2Te3 and Bi2Te3, were synthesized as hexagonal, 2D nanoplates via a colloidal polyol route. The as-synthesized Sb2Te3 and Bi2Te3 vary drastically from one another in their lateral and vertical dimensions as revealed by scanning electron microscopy and atomic force microscopy. The single crystalline nanoplate nature is deduced by high-resolution transmission electron microscopy and selected area electron diffraction. Nanoplates have well-defined hexagonal facets as seen in the scanning and transmission electron microscopy images. The nanoplates were consolidated as an anisotropic nanostructured pellet via spark plasma sintering. Preferred orientation observed in the powder X-ray diffraction pattern and scanning electron microscopy images of the fractured pellets confirm the anisotropic structure of the nanoplates. Thermoelectric properties in the parallel and perpendicular directions were measured, revealing strong anisotropy with a significant reduction to thermal conductivity in the perpendicular direction due to increased phonon scattering at nanoplate interfaces. All compositions, except that of the 25% Bi2Te3 nanoplate composite, behave as degenerate semiconductors with increasing electrical resistivity as the temperature increases. The Seebeck coefficient is also increased dramatically in the nanocomposites, the highest reaching 210 μV/K for 15% Bi2Te3. The increase in Seebeck is attributed to energy carrier filtering at the nanoplate interfaces. Overall, these enhanced thermoelectric properties lead to a drastic increase in the thermoelectric performance in the perpendicular direction, with zT ∼ 1.26, for the 15% Bi2Te3 nanoplate composite at 450 K.

Ab-initiotransport model to study the thermoelectric performance of MoS2, MoSe2, and WS2monolayers by using Boltzmann transport equation

The potential for thermoelectric applications of two-dimensional materials is quite promising. Usingab-initiocalculations, we have investigated the electronic band structure, phonon band structure, electronic density of states, and phonon density of states of monolayers MoS2, MoSe2, and WS2. In order to compute the thermoelectric properties of monolayers MoS2, MoSe2, and WS2, we used theab-initiomodel suggested by Faghaniniaet al(2015Phys. Rev.B91235123). Within this model, by using inputs from density functional theory and considering all relevant elastic and inelastic scattering mechanisms, we have calculated the thermoelectric properties of monolayers MoS2, MoSe2, and WS2over various ranges of temperature (T) and carrier concentration (n). The obtained results of Seebeck coefficients (S) and figure of merit (ZT) atT= 300 K for bothn/p-types of monolayers MoS2, MoSe2, and WS2are in good agreement with the findings obtained by other models using the Boltzmann transport equation within a constant relaxation time framework.

Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides

Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.

Simultaneously Enhanced Thermoelectric and Mechanical Performance in SnSe-Based Nanocomposites Produced via Sintering SnSe and KCu7S4 Nanomaterials

Both thermoelectric and mechanical properties are important to the practical applications of thermoelectric materials. Herein, we develop a strategy for alloying KCu7S4 to improve the dimensionless figure of merit (zT), compressive strength, and Vickers hardness of polycrystalline SnSe. Through chemical synthesis and particle mixing in solutions, powders with SnSe nanoparticles and KCu7S4 nanowires are produced, and the subsequent spark plasma sintering triggers the reaction between the two chalcogenides, resulting in the formation of Cu2SnSe3 nanoparticles and substitution of Cu and S in the SnSe matrix. The composition tuning and secondary phase formation effectively enhance the power factor and diminish the lattice thermal conductivity, leading to a maximum zT of 1.13 at 823 K for the optimal sample, which is improved by 135% over that of SnSe. Simultaneously, the compressive strength and hardness are also enhanced, as exemplified by a high compressive strength of 135 MPa that is enhanced by ∼81% compared to that of SnSe. The current study demonstrates effective composite and composition design toward enhanced thermoelectric and mechanical performance in polycrystalline SnSe.

Optical and thermoelectric properties of new Janus ZnMN2 (M = Ge, Sn, Si and N = S, Se, Te) monolayers: a first-principles study

Thermoelectric materials have received great interest because they directly tap into the vast reserves of currently underused thermal energy, in an environmentally friendly manner. In this work, we investigated the electronic, optical and thermoelectric properties of novel ZnMN2 (M = Ge, Sn, Si and N = S, Se, Te) monolayers by performing density functional theory calculations. The dynamic and thermal stabilities of ZnMN2 (M = Ge, Sn, Si and N = S, Se, Te) monolayers were confirmed by their phonon band structures and ab initio molecular dynamics (AIMD) simulations, which showed that all the studied monolayers are stable. Calculated electronic band structures showed that ZnSiTe2, ZnGeSe2, and ZnSnTe2 have a direct band gap, while the remaining monolayers have an indirect band gap. Optical properties in terms of the imaginary part of the dielectric function have also been investigated, which showed that all the first excitonic peaks lie in the visible region. Transport coefficients, such as the Seebeck coefficient (S), electrical conductivity (σ) and power factor (PF) were calculated using the Boltzmann theory and plotted against chemical potential. The results demonstrated that the peak values of the p-type region for the PF are greater than those of the n-type region. Notably, ZnSiTe2 exhibits a large PF due to its smaller Seebeck coefficient and higher electrical conductivity compared to ZnSnS2, indicating that it is a promising candidate for thermoelectric applications. Our findings reveal that ZnMN2 (M = Ge, Sn, Si and N = S, Se, Te) monolayers open up new possibilities for optoelectronics and thermoelectric device applications.

Recent Progress on Phase Engineering of Nanomaterials

As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.

Computational assessment of the potential of cross-catalytic coprecipitating systems for the bottom-up design of nanocomposites

The production of nanocomposites is often economically and environmentally costly. Silica-witherite biomorphs, known for producing a wealth of life-like shapes, are nanocomposites entirely formed through self-organization processes. Behind these precipitates are two precipitation reactions that catalyze each other. Using a simple computational approach, we show here that this type of chemical system - defined here as Cross-Catalytic Coprecipitating Systems (CCCSs) - is of great interest to material design. Provided that cross-catalytic effects are sufficient to overcome the precipitation thresholds for each phase, all CCCSs can be expected to self-organize into nanocomposite materials through a one-pot, one-step synthesis protocol. Symmetry-breaking events generating various complex, ordered textures are predicted in CCCSs involving crystalline phases. While high levels of stochasticity lead to a loss of ordering, coprecipitation is found to be robust to diffusion or advection in the solution. This model shows that a couple of chemical reactions can generate a range of complex textures - with possibly distinct physical/chemical properties. Cross-catalytic coprecipitating systems consequently represent a promising avenue for producing nanocomposites with complex textures at reduced economic and environmental costs.

Cation-Disorder Engineering Promotes Efficient Charge-Carrier Transport in AgBiS2 Nanocrystal Films

Efficient charge-carrier transport is critical to the success of emergent semiconductors in photovoltaic applications. So far, disorder has been considered detrimental for charge-carrier transport, lowering mobilities, and causing fast recombination. This work demonstrates that, when properly engineered, cation disorder in a multinary chalcogenide semiconductor can considerably enhance the charge-carrier mobility and extend the charge-carrier lifetime. Here, the properties of AgBiS2 nanocrystals (NCs) are explored as a function of Ag and Bi cation-ordering, which can be modified via thermal-annealing. Local Ag-rich and Bi-rich domains formed during hot-injection synthesis are transformed to induce homogeneous disorder (random Ag-Bi distribution). Such cation-disorder engineering results in a sixfold increase in the charge-carrier mobility, reaching ≈2.7 cm2 V-1 s-1 in AgBiS2 NC thin films. It is further demonstrated that homogeneous cation disorder reduces charge-carrier localization, a hallmark of charge-carrier transport recently observed in silver-bismuth semiconductors. This work proposes that cation-disorder engineering flattens the disordered electronic landscape, removing tail states that would otherwise exacerbate Anderson localization of small polaronic states. Together, these findings unravel how cation-disorder engineering in multinary semiconductors can enhance the efficiency of renewable energy applications.

Open-Microcolumn Array: A Novel Approach for Enhanced Electrocatalytic Bubble Desorption in Microreactors

High-efficiency electrocatalytic water splitting requires high intrinsic activity of catalysts and even more importantly favorable mass transfer. However, gas bubbles adhering to the surface of catalysts limit the re-expose of catalytic active sites to the electrolyte and reduce the catalytic activities. The efficient desorption of bubbles can be facilitated by a hierarchical multiscale structure of the electrode surface. Herein, we report an opened periodic three-dimensional electrode composed of iron (Fe)-cobalt (Co)-nickel (Ni) (oxy)hydroxide nanorods (NRs) grown in situ on a high aspect ratio nickel microcolumn array (NCA) for electrocatalytic water splitting. Compared with the flat nickel plate, the NCA not only increases the surface area for catalyst loading but also improves the wettability of the electrolyte on the electrode surface, exhibiting superhydrophilicity/superaerophobicity (the electrolyte and the bubble contact angles were about ∼0 and 163°, respectively), which accelerates the bubble evolution and desorption process. The X-ray photoelectron spectroscopy indicates that the synergy of Fe-Co-Ni could enhance the ratio of Co3+/Co2+ and Ni3+/Ni2+ and promote the electrocatalytic activity. Benefiting from the microstructure design and synergistic effects, the Co4Fe0.5Ni0.5OOH-NR@NCA electrode achieves a superior OER performance with an overpotential of 199 mV at 10 mA·cm-2.

Mechanistic Study of Amphiphilic-Assisted Self-Assembled Cadmium Sulfide Quantum Dots into 3D Superstructures

Self-assembling of nanoparticles into complex superstructures is very challenging, which usually depends on postorganizing techniques or pre-existing templates such as polypeptide chains or DNA or external stimulus. Such self-assembled processes typically lead to close-packed structures. Here, it has been demonstrated that under carefully template-free reaction conditions CdS quantum dots (QDs) could be synthesized and simultaneously self-assembled into complex superstructures without compromising individual QD properties. The superstructures of CdS QDs attained by the chemical-based method demonstrate Stokes-shifted photoluminescence (PL) from trap states. Remarkably, the PL decay of superstructures exhibits a single-exponential feature. This behavior is unusual for the synthesized superstructures, indicating that the trap states are restricted to a narrow range. The growth mechanism of these superstructures is explained through the formation of liquid crystal phases (LCPs) with the help of a small-angle X-ray scattering (SAXS) analysis.

Recent Progress in Colloidal Quantum Dot Thermoelectrics

Semiconducting colloidal quantum dots (CQDs) represent an emerging class of thermoelectric materials for use in a wide range of future applications. CQDs combine solution processability at low temperatures with the potential for upscalable manufacturing via printing techniques. Moreover, due to their low dimensionality, CQDs exhibit quantum confinement and a high density of grain boundaries, which can be independently exploited to tune the Seebeck coefficient and thermal conductivity, respectively. This unique combination of attractive attributes makes CQDs very promising for application in emerging thermoelectric generator (TEG) technologies operating near room temperature. Herein, recent progress in CQDs for application in emerging thin-film thermoelectrics is reviewed. First, the fundamental concepts of thermoelectricity in nanostructured materials are outlined, followed by an overview of the popular synthetic methods used to produce CQDs with controllable sizes and shapes. Recent strides in CQD-based thermoelectrics are then discussed with emphasis on their application in thin-film TEGs. Finally, the current challenges and future perspectives for further enhancing the performance of CQD-based thermoelectric materials for future applications are discussed.

Chemical and Physical Properties of Photonic Noble-Metal Nanomaterials

Colloidal noble metal nanoparticles (NPs) are composed of metal cores and organic or inorganic ligand shells. These NPs support size- and shape-dependent plasmonic resonances. They can be assembled from dispersions into artificial metamolecules which have collective plasmonic resonances originating from coupled bright and dark optical electric and magnetic modes that form depending on the size and shape of the constituent NPs and their number, arrangement, and interparticle distance. NPs can also be assembled into extended 2D and 3D metamaterials that are glassy thin films or ordered thin films or crystals, also known as superlattices and supercrystals. The metamaterials have tunable optical properties that depend on the size, shape, and composition of the NPs, and on the number of NP layers and their interparticle distance. Interestingly, strong light-matter interactions in superlattices form plasmon polaritons. Tunable interparticle distances allow designer materials with dielectric functions tailorable from that characteristic of an insulator to that of a metal, and serve as strong optical absorbers or scatterers, respectively. In combination with lithography techniques, these extended assemblies can be patterned to create subwavelength NP superstructures and form large-area 2D and 3D metamaterials that manipulate the amplitude, phase, and polarization of transmitted or reflected light.

Exploring Material Properties and Device Output Performance of a Miniaturized Flexible Thermoelectric Generator Using Scalable Synthesis of Bi2Se3 Nanoflakes

Environmental heat-to-electric energy conversion presents a promising solution for powering sensors in wearable and portable devices. However, the availability of near-room temperature thermoelectric (TE) materials is highly limited, posing a significant challenge in this field. Bi₂Se₃, as a room-temperature TE material, has attracted much attention. Here, we demonstrate a large-scale synthesis of Bi₂Se₃ nanoflakes used for the microflexible TE generator. A high-performance micro-TE generator module, utilizing a flexible printed circuit, has been designed and fabricated through the process of screen printing. The TE generator configuration comprises five pairs of PN TE legs. The p-type TE leg utilizes commercially available Sb₂Te₃ powder, while the n-type TE leg employs Bi₂Se₃ nanoflakes synthesized in this study. For comparative purposes, we also incorporate commercially available Bi₂Se₃ powder as an alternative n-type TE leg. The optimal performance of the single-layer microflexible TE generator, employing Bi₂Se₃ nanoflakes as the active material, is achieved when operating at a temperature differential of 109.5 K, the open-circuit voltage (V_OC) is 0.11 V, the short circuit current (I_SC) is 0.34 mA, and the maximum output power (P_MAX) is 9.5 μW, much higher than the generator consisting of commercial Bi₂Se₃ powder, which is expected to provide an energy supply for flexible electronic devices.

General Syntheses of High-Performance Thermoelectric Nanostructured Solids without Post-Synthetic Ligand Stripping

Ligand-assisted wet chemical synthesis is a versatile methodology to produce controllable nanocrystals (NCs). The post-treatment of ligands is significant for the performance of functional devices. Herein, a method that retains ligands of colloidal-synthesized nanomaterials to produce thermoelectric nanomaterials is proposed, which differs from the conventional methods that strip ligands using multistep cumbersome processes. The ligand-retention method can control the size and dispersity of nanocrystals during the consolidation of the NCs into dense pellets, in which retained ligands are transformed into organic carbon within the inorganic matrices, establishing clear organic-inorganic interfaces. Characterizations of the nonstripped and stripped samples confirm that this strategy can affect electric transport slightly but reduce the thermal conductivity largely. As a result, the materials (e.g., SnSe, Cu2-xS, AgBiSe2, and Cu2ZnSnSe4) with ligands retained achieve higher peak zT and better mechanical properties. This method can be applied to other colloidal thermoelectric NCs and functional materials.

Promoting solution-phase superlattices of CsPbBr3 nanocrystals

We present a size-selective method for purifying and isolating perovskite CsPbBr₃ nanocrystals (NCs) that preserves their as-synthesized surface chemistry and extremely high photoluminescence quantum yields (PLQYs). The isolation procedure is based on the stepwise evaporation of nonpolar co-solvents with high vapor pressure to promote precipitation of a size-selected product. As the sample fractions become more uniform in size, we observe that the NCs self-assemble into colloidally stable, solution-phase superlattices (SLs). Small angle X-ray scattering (SAXS) and dynamic light scattering (DLS) studies show that the solution-phase SLs contain 1000s of NCs per supercrystal in a simple cubic, face-to-face packing arrangement. The SLs also display systematically faster radiative decay dynamics and improved PLQYs, as well as unique spectral absorption features likely resulting from inter-particle electronic coupling effects. This study is the first demonstration of solution-phase CsPbBr₃ SLs and highlights their potential for achieving collective optoelectronic phenomena previously observed from solid-state assemblies.

Thermoelectric Performance of Surface-Engineered Cu1.5-xTe-Cu2Se Nanocomposites

Cu_2-xS and Cu_2-xSe have recently been reported as promising thermoelectric (TE) materials for medium-temperature applications. In contrast, Cu_2-xTe, another member of the copper chalcogenide family, typically exhibits low Seebeck coefficients that limit its potential to achieve a superior thermoelectric figure of merit, zT, particularly in the low-temperature range where this material could be effective. To address this, we investigated the TE performance of Cu_1.5-xTe-Cu₂Se nanocomposites by consolidating surface-engineered Cu_1.5Te nanocrystals. This surface engineering strategy allows for precise adjustment of Cu/Te ratios and results in a reversible phase transition at around 600 K in Cu_1.5-xTe-Cu₂Se nanocomposites, as systematically confirmed by in situ high-temperature X-ray diffraction combined with differential scanning calorimetry analysis. The phase transition leads to a conversion from metallic-like to semiconducting-like TE properties. Additionally, a layer of Cu₂Se generated around Cu_1.5-xTe nanoparticles effectively inhibits Cu_1.5-xTe grain growth, minimizing thermal conductivity and decreasing hole concentration. These properties indicate that copper telluride based compounds have a promising thermoelectric potential, translated into a high dimensionless zT of 1.3 at 560 K.

Bottom-Up Synthesis of SnTe-Based Thermoelectric Composites

There is a need for the development of lead-free thermoelectric materials for medium-/high-temperature applications. Here, we report a thiol-free tin telluride (SnTe) precursor that can be thermally decomposed to produce SnTe crystals with sizes ranging from tens to several hundreds of nanometers. We further engineer SnTe-Cu₂SnTe₃ nanocomposites with a homogeneous phase distribution by decomposing the liquid SnTe precursor containing a dispersion of Cu_1.5Te colloidal nanoparticles. The presence of Cu within the SnTe and the segregated semimetallic Cu₂SnTe₃ phase effectively improves the electrical conductivity of SnTe while simultaneously reducing the lattice thermal conductivity without compromising the Seebeck coefficient. Overall, power factors up to 3.63 mW m^-1 K^-2 and thermoelectric figures of merit up to 1.04 are obtained at 823 K, which represent a 167% enhancement compared with pristine SnTe.

Development of Nanostructured Bi2Te3 with High Thermoelectric Performance by Scalable Synthesis and Microstructure Manipulations

Nanostructuring of thermoelectric (TE) materials leads to improved energy conversion performance; however, it requires a perfect fit between the nanoprecipitates' chemistry and crystal structure and those of the matrix. We synthesize bulk Bi₂Te₃ from molecular precursors and characterize their structure and chemistry using electron microscopy and analyze their TE transport properties in the range of 300-500 K. We find that synthesis from Bi₂O₃ + Na₂TeO₃ precursors results in n-type Bi₂Te₃ containing a high number density (N_v ∼ 2.45 × 10²³ m^-3) of Te-nanoprecipitates decorating the Bi₂Te₃ grain boundaries (GBs), which yield enhanced TE performance with a power factor (PF) of ∼19 μW cm^-1 K^-2 at 300 K. First-principles calculations validate the role of Te/Bi₂Te₃ interfaces in increasing the charge carrier concentration, density of states, and electrical conductivity. These optimized TE coefficients yield a promising TE figure of merit (zT) peak value of 1.30 at 450 K and an average zT of 1.14 from 300 to 500 K. This is one of the cutting-edge zT values recorded for n-type Bi₂Te₃ produced by chemical routes. We believe that this chemical synthesis strategy will be beneficial for future development of scalable n-type Bi₂Te₃ based devices.

High Seebeck Coefficient from Screen-Printed Colloidal PbSe Nanocrystals Thin Film

Thin-film thermoelectrics (TEs) with a thickness of a few microns present an attractive opportunity to power the internet of things (IoT). Here, we propose screen printing as an industry-relevant technology to fabricate TE thin films from colloidal PbSe quantum dots (QDs). Monodisperse 13 nm-sized PbSe QDs with spherical morphology were synthesized through a straightforward heating-up method. The cubic-phase PbSe QDs with homogeneous chemical composition allowed the formulation of a novel ink to fabricate 2 μm-thick thin films through robust screen printing followed by rapid annealing. A maximum Seebeck coefficient of 561 μV K-1 was obtained at 143 °C and the highest electrical conductivity of 123 S m-1 was reached at 197 °C. Power factor calculations resulted in a maximum value of 2.47 × 10-5 W m-1 K-2 at 143 °C. To the best of our knowledge, the observed Seebeck coefficient value is the highest reported for TE thin films fabricated by screen printing. Thus, this study highlights that increased Seebeck coefficients can be obtained by using QD building blocks owing to quantum confinement.

Tailoring the phase transition of silver selenide at the atomistic scale

Thermoelectric materials provide promising solutions for energy harvesting from the environment. Silver selenide (Ag₂Se) material attracts much attention due to its excellent thermoelectric properties under superionic phase transition. However, the optimal thermoelectric figure of merit occurs during the phase transition at high temperatures, making low-temperature devices unable to benefit from their best thermoelectric performance. Here, we tailored the phase transition process of Ag₂Se materials with various sizes, and probed the phase transition temperature by in situ transmission electron microscopy. By tuning the motion of the atoms near the surface using size-dependent surface energy, the phase transition-induced process is tailored towards low temperatures. This work paves the way for future phase transition engineering to enhance thermoelectric performance.

Solution-Processed Inorganic Thermoelectric Materials: Opportunities and Challenges

Thermoelectric technology requires synthesizing complex materials where not only the crystal structure but also other structural features such as defects, grain size and orientation, and interfaces must be controlled. To date, conventional solid-state techniques are unable to provide this level of control. Herein, we present a synthetic approach in which dense inorganic thermoelectric materials are produced by the consolidation of well-defined nanoparticle powders. The idea is that controlling the characteristics of the powder allows the chemical transformations that take place during consolidation to be guided, ultimately yielding inorganic solids with targeted features. Different from conventional methods, syntheses in solution can produce particles with unprecedented control over their size, shape, crystal structure, composition, and surface chemistry. However, to date, most works have focused only on the low-cost benefits of this strategy. In this perspective, we first cover the opportunities that solution processing of the powder offers, emphasizing the potential structural features that can be controlled by precisely engineering the inorganic core of the particle, the surface, and the organization of the particles before consolidation. We then discuss the challenges of this synthetic approach and more practical matters related to solution processing. Finally, we suggest some good practices for adequate knowledge transfer and improving reproducibility among different laboratories.

Surface Functionalization of Surfactant-Free Particles: A Strategy to Tailor the Properties of Nanocomposites for Enhanced Thermoelectric Performance

The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing "naked" particles' surface by inorganic molecules to control the nanostructure and, consequently, thermoelectric performance. In particular, we use bismuth thiolates to functionalize surfactant-free SnTe particles' surfaces. Upon thermal processing, bismuth thiolates decomposition renders SnTe-Bi2 S3 nanocomposites with synergistic functions: 1) carrier concentration optimization by Bi doping; 2) Seebeck coefficient enhancement and bipolar effect suppression by energy filtering; and 3) lattice thermal conductivity reduction by small grain domains, grain boundaries and nanostructuration. Overall, the SnTe-Bi2 S3 nanocomposites exhibit peak z T up to 1.3 at 873 K and an average z T of ≈0.6 at 300-873 K, which is among the highest reported for solution-processed SnTe.

Surface Functionalization of Surfactant-Free Particles: A Strategy to Tailor the Properties of Nanocomposites for Enhanced Thermoelectric Performance

The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing "naked" particles' surface by inorganic molecules to control the nanostructure and, consequently, thermoelectric performance. In particular, we use bismuth thiolates to functionalize surfactant-free SnTe particles' surfaces. Upon thermal processing, bismuth thiolates decomposition renders SnTe-Bi2S3 nanocomposites with synergistic functions: 1) carrier concentration optimization by Bi doping; 2) Seebeck coefficient enhancement and bipolar effect suppression by energy filtering; and 3) lattice thermal conductivity reduction by small grain domains, grain boundaries and nanostructuration. Overall, the SnTe-Bi2S3 nanocomposites exhibit peak z  T up to 1.3 at 873 K and an average z  T of ≈0.6 at 300-873 K, which is among the highest reported for solution-processed SnTe.

Enhancement of the Thermoelectric Performance of Cu2GeSe3 via Isoelectronic (Ag, S)-co-substitution

Recently, ternary Cu-based Cu-IV-Se (IV = Sb, Ge, and Sn) compounds have received extensive attention in the thermoelectric field. Compared with Cu-Sb-Se and Cu-Sn-Se, Cu-Ge-Se compounds have been less studied due to its poor Seebeck coefficient and high thermal conductivity. Here, the Cu₂GeSe₃ material with high electrical conductivity was first prepared, and then, its effective mass was increased by doping with S, which led to the Seebeck coefficient of the doped sample being 1.93 times higher than that of pristine Cu₂GeSe₃ at room temperature. Moreover, alloying Ag at the Cu site in the Cu₂GeSe_2.96S_0.04 sample could further cause a 5.16 times increase in the Seebeck coefficient at room temperature, and the lattice thermal conductivity was remarkably decreased because of the introduction of the dislocations in the Cu₂GeSe₃ sample. Finally, benefitted from the high Seebeck coefficient and low thermal conductivity, a record high ZT = 0.9 at 723 K was obtained for the Cu_1.85Ag_0.15GeSe_2.96S_0.04 sample, which increased 345% in comparison with the pristine Cu₂GeSe₃, and it is among the highest reported values for Cu₂GeSe₃-based thermoelectric.

Recent Advances in the Preparation of Barium Sulfate Nanoparticles: A Mini-Review

The potential for barium sulphate nanoparticles to be used in a variety of important fields has sparked a lot of attention. Methods for obtaining this material by milling (top-down approach) are not very popular due to the difficulty of controlling the size and shape of particles, as well as changes in their physicochemical properties during milling. More promising is the bottom-up approach, which is the interaction of Ba2+ and SO42− ions in a liquid environment. Direct precipitation is the simplest method; however, it does not allow control of the particle size. Microemulsions, microreactors membrane dispersion, as well as spinning disc reactors are used to overcome drawbacks of direct precipitation and allow control of particle size and shape. This is ensured mainly by intensive controlled micromixing of the precursors with concentrations close to saturated ones. The present review focuses on recent advances in the production of barium sulfate nanoparticles using various approaches, as well as their advantages and limitations. The issues of scaling up the techniques are also considered, and promising methods for obtaining BaSO4 nanoparticles are also discussed.

Two-dimensional copper based colloidal nanocrystals: synthesis and applications

Two-dimensional (2D) semiconductor nanocrystals display unconventional physical and opto-electronic properties due to their ultrathin and unique electronic structures. Since the success of Cd-based photoemissive nanocrystals, the development of sustainable and low-cost nanocrystals with enhanced electronic and physical properties has become a central research theme. In this context, copper-based semiconductor 2D nanocrystals, the cost-effective and eco-friendly alternative, exhibit unique plasmonic resonance, transport properties, and high ionic conductivity beneficial for sensing, energy storage, conversion, and catalytic applications. This review summarizes recent progress in the colloidal synthesis, growth mechanisms, properties, and applications of 2D copper-based nanostructures with tunable compositions, dimensions, and crystal phases. We highlight the growth mechanisms concerning their shape evolution in two dimensions. We analyse the effectiveness of cation exchange as a tool to synthesize multinary nanocrystals. Based on the preparation of Cu-based chalcogenide and non-chalcogenide compositions, we discuss synthesis control achieved via colloidal approaches to allow dimension tunability, phase engineering, and plasmonic and thermoelectric property optimization. Furthermore, their potential in various applications of catalysis, energy storage, and sensing is reviewed. Finally, we address the current challenges associated with 2D Cu-based nanocrystal development and provide an outlook pertaining to unexplored research areas.

Off-Centered Pb Interstitials in PbTe

Previous calculations have demonstrated that Te vacancies are energetically the major defects in PbTe. However, the Pb interstitials are also important because experiments have shown that the volume of Pb-rich PbTe increases at a higher Pb content. In this study, density functional theory calculations were used to investigate the defect properties of low-symmetry Pb interstitials in PbTe. By breaking the higher symmetry imposed on the on-centered interstitial defects, the lowest ground state of Pb interstitial defects is off-centered along the [1¯1¯1¯] direction. Because of the four multi-stable structures with low defect-formation energies, the defect density of Pb interstitials is expected to be approximately six times higher than previous predictions for PbTe synthesized at 900 K. In contrast to the on-centered Pb interstitials, the off-centered Pb interstitials in PbTe can exhibit long-range lattice relaxation in the [111] direction beyond a distance of 1 nm, indicating the potential formation of weak local dipoles. This result provides an alternative explanation for the emphanitic anharmonicity of PbTe in the high-temperature regime.

Defect Engineering in Solution-Processed Polycrystalline SnSe Leads to High Thermoelectric Performance

SnSe has emerged as one of the most promising materials for thermoelectric energy conversion due to its extraordinary performance in its single-crystal form and its low-cost constituent elements. However, to achieve an economic impact, the polycrystalline counterpart needs to replicate the performance of the single crystal. Herein, we optimize the thermoelectric performance of polycrystalline SnSe produced by consolidating solution-processed and surface-engineered SnSe particles. In particular, the SnSe particles are coated with CdSe molecular complexes that crystallize during the sintering process, forming CdSe nanoparticles. The presence of CdSe nanoparticles inhibits SnSe grain growth during the consolidation step due to Zener pinning, yielding a material with a high density of grain boundaries. Moreover, the resulting SnSe-CdSe nanocomposites present a large number of defects at different length scales, which significantly reduce the thermal conductivity. The produced SnSe-CdSe nanocomposites exhibit thermoelectric figures of merit up to 2.2 at 786 K, which is among the highest reported for solution-processed SnSe.

Removing the Oxygen-Induced Donor-like Effect for High Thermoelectric Performance in n-Type Bi2Te3-Based Compounds

Bismuth telluride-based alloys are the best performing thermoelectric materials near room temperature. Grain size refinement and nanostructuring are the core stratagems for improving thermoelectric and mechanical properties. However, the donor-like effect induced by grain size refinement strongly restricts the thermoelectric properties especially in the vicinity of room temperature. In this study, the formation mechanism for the donor-like effect in Bi₂Te₃-based compounds was revealed by synthesizing five batches of polycrystalline samples. We demonstrate that the donor-like effect in Bi₂Te₃-based compounds is strongly related to the vacancy defects (V_Bi^‴ and V_Te^···) induced by the fracturing process and oxygen in air for the first time. The oxygen-induced donor-like effect dramatically increases the carrier concentration from 2.5 × 10¹⁹ cm^-3 for the zone melting ingot and bulks sintered with powders ground under an inert atmosphere to 7.5 × 10¹⁹ cm^-3, which is largely beyond the optimum carrier concentration and seriously deteriorates the thermoelectric performance. Moreover, it is found that both avoiding exposure to air and eliminating the thermal vacancy defects (V_Bi^‴ and V_Te^···) via heat treatment before exposure to air can effectively remove the donor-like effect, producing almost the same carrier concentration and Seebeck coefficient as those of the zone melting ingot for these samples. Therefore, a defect equation of oxygen-induced donor-like effect was proposed and was further explicitly corroborated by positron annihilation measurement. With the removal of donor-like effect and improved texturing via multiple hot deformation (HD) processes, a maximum power factor of 3.5 mW m^-1 K^-2 and a reproducible maximum ZT value of 1.01 near room temperature are achieved. This newly proposed defect equation of the oxygen-induced donor-like effect will provide a guideline for developing higher-performance V₂VI₃ polycrystalline materials for near-room-temperature applications.

The Importance of Surface Adsorbates in Solution-Processed Thermoelectric Materials: The Case of SnSe

Solution synthesis of particles emerges as an alternative to prepare thermoelectric materials with less demanding processing conditions than conventional solid-state synthetic methods. However, solution synthesis generally involves the presence of additional molecules or ions belonging to the precursors or added to enable solubility and/or regulate nucleation and growth. These molecules or ions can end up in the particles as surface adsorbates and interfere in the material properties. This work demonstrates that ionic adsorbates, in particular Na+ ions, are electrostatically adsorbed in SnSe particles synthesized in water and play a crucial role not only in directing the material nano/microstructure but also in determining the transport properties of the consolidated material. In dense pellets prepared by sintering SnSe particles, Na remains within the crystal lattice as dopant, in dislocations, precipitates, and forming grain boundary complexions. These results highlight the importance of considering all the possible unintentional impurities to establish proper structure-property relationships and control material properties in solution-processed thermoelectric materials.

Printing thermoelectric inks toward next-generation energy and thermal devices

The ability of thermoelectric (TE) materials to convert thermal energy to electricity and vice versa highlights them as a promising candidate for sustainable energy applications. Despite considerable increases in the figure of merit zT of thermoelectric materials in the past two decades, there is still a prominent need to develop scalable synthesis and flexible manufacturing processes to convert high-efficiency materials into high-performance devices. Scalable printing techniques provide a versatile solution to not only fabricate both inorganic and organic TE materials with fine control over the compositions and microstructures, but also manufacture thermoelectric devices with optimized geometric and structural designs that lead to improved efficiency and system-level performances. In this review, we aim to provide a comprehensive framework of printing thermoelectric materials and devices by including recent breakthroughs and relevant discussions on TE materials chemistry, ink formulation, flexible or conformable device design, and processing strategies, with an emphasis on additive manufacturing techniques. In addition, we review recent innovations in the flexible, conformal, and stretchable device architectures and highlight state-of-the-art applications of these TE devices in energy harvesting and thermal management. Perspectives of emerging research opportunities and future directions are also discussed. While this review centers on thermoelectrics, the fundamental ink chemistry and printing processes possess the potential for applications to a broad range of energy, thermal and electronic devices.

Enhanced Thermoelectric Performance by Surface Engineering in SnTe-PbS Nanocomposites

Thermoelectric materials enable the direct conversion between heat and electricity. SnTe is a promising candidate due to its high charge transport performance. Here, we prepared SnTe nanocomposites by employing an aqueous method to synthetize SnTe nanoparticles (NP), followed by a unique surface treatment prior NP consolidation. This synthetic approach allowed optimizing the charge and phonon transport synergistically. The novelty of this strategy was the use of a soluble PbS molecular complex prepared using a thiol-amine solvent mixture that upon blending is adsorbed on the SnTe NP surface. Upon consolidation with spark plasma sintering, SnTe-PbS nanocomposite is formed. The presence of PbS complexes significantly compensates for the Sn vacancy and increases the average grain size of the nanocomposite, thus improving the carrier mobility. Moreover, lattice thermal conductivity is also reduced by the Pb and S-induced mass and strain fluctuation. As a result, an enhanced ZT of ca. 0.8 is reached at 873 K. Our finding provides a novel strategy to conduct rational surface treatment on NP-based thermoelectrics.

Zn-Induced Defect Complexity for the High Thermoelectric Performance of n-Type PbTe Compounds

Although defect engineering is the core strategy to improve thermoelectric properties, there are limited methods to effectively modulate the designed defects. Herein, we demonstrate that a high ZT value of 1.36 at 775 K and a high average ZT value of 0.99 in the temperature range from 300 to 825 K are realized in Zn-containing PbTe by designing complex defects. By combining first-principles calculations and experiments, we show that Zn atoms occupy both Pb sites and interstitial sites in PbTe and couple with each other. The contraction stress induced via substitutional Zn on Pb sites alleviates the swelling stress by Zn atoms occupying the interstitial sites and promotes the solubility of interstitial Zn atoms in the structure of PbTe. The stabilization of Zn impurity as a complex defect extends the region of PbTe phase stability toward Pb_0.995Zn_0.02Te, while the solid solution region in the other direction of the ternary phase diagram is much smaller. The evolution of defects in PbTe was further explicitly corroborated by aberration-corrected scanning transmission electron microscopy (Cs-corrected STEM) and positron annihilation measurement. The Zn atoms compensate the Pb vacancies (V_Pb) and Zn interstitials (Zn_i) significantly improve the electron concentration, producing a high carrier mobility of 1467.7 cm² V^-1 s^-1 for the Pb_0.995Zn_0.02Te sample. A high power factor of 4.11 mW m^-1 K^-2 is achieved for the Pb_0.995Zn_0.02Te sample at 306 K. This work provides new insights into understanding the nature and evolution of the defects in n-type PbTe as well as improving the electronic and thermal transport properties toward higher thermoelectric performance.

Solution Phase Growth and Ion Exchange in Microassemblies of Lead Chalcogenide Nanoparticles

We demonstrate the synthesis of micron-sized assemblies of lead chalcogenide nanoparticles with controlled morphology, crystallinity, and composition through a facile room-temperature solution phase reaction. The amine-thiol solvent system enables this synthesis with a unique oriented attachment growth mechanism of nanoparticles occurring on the time scale of the reaction itself, forming single-crystalline microcubes of PbS, PbSe, and PbTe materials. Increasing the rate of reaction by changing reaction parameters further allows disturbing the oriented attachment mechanism, which results in polycrystalline microassemblies with uniform spherical morphologies. Along with polycrystallinity, due to the differences in reactivities of each chalcogen in the solution, a different extent of hollow-core nature is observed in these microparticles. Similar to morphologies, the composition of such microparticles can be altered through very simplistic room-temperature solution phase coprecipitation, as well as ion-exchange reactions. While coprecipitation reactions are successful in synthesizing core-shell microstructures of PbSe-PbTe materials, the use of solution phase ion-exchange reaction allows for the exchange of not only Te with Se but also Ag with Pb inside the core of the PbTe microparticles. Despite exchanging one Pb with two Ag cations, the hollow-core nature of particles aids in the retention of the original uniform microparticle morphology.

Defect engineering in thermoelectric materials: what have we learned?

Thermoelectric energy conversion is an all solid-state technology that relies on exceptional semiconductor materials that are generally optimized through sophisticated strategies involving the engineering of defects in their structure. In this review, we summarize the recent advances of defect engineering to improve the thermoelectric (TE) performance and mechanical properties of inorganic materials. First, we introduce the various types of defects categorized by dimensionality, i.e. point defects (vacancies, interstitials, and antisites), dislocations, planar defects (twin boundaries, stacking faults and grain boundaries), and volume defects (precipitation and voids). Next, we discuss the advanced methods for characterizing defects in TE materials. Subsequently, we elaborate on the influences of defect engineering on the electrical and thermal transport properties as well as mechanical performance of TE materials. In the end, we discuss the outlook for the future development of defect engineering to further advance the TE field.

Enhanced Thermoelectric Performance of n-Type Bi2Se3 Nanosheets through Sn Doping

The cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on rare or toxic elements such as tellurium or lead need to be produced using high-throughput technologies not involving high temperatures and long processes. Bi₂Se₃ is an obvious possible Te-free alternative to Bi₂Te₃ for ambient temperature thermoelectric applications, but its performance is still low for practical applications, and additional efforts toward finding proper dopants are required. Here, we report a scalable method to produce Bi₂Se₃ nanosheets at low synthesis temperatures. We studied the influence of different dopants on the thermoelectric properties of this material. Among the elements tested, we demonstrated that Sn doping resulted in the best performance. Sn incorporation resulted in a significant improvement to the Bi₂Se₃ Seebeck coefficient and a reduction in the thermal conductivity in the direction of the hot-press axis, resulting in an overall 60% improvement in the thermoelectric figure of merit of Bi₂Se₃.

Effects of the Interface between Inorganic and Organic Components in a Bi2Te3-Polypyrrole Bulk Composite on Its Thermoelectric Performance

We provided a method to hybridize Bi₂Te₃ with polypyrrole, thus forming an inorganic/organic bulk composite (Bi₂Te₃–polypyrrole), in which the effects of energy band junction and phonon scattering were expected to occur at the interface of the two components. Bi₂Te₃–polypyrrole exhibited a considerably high Seebeck coefficient compared to pristine Bi₂Te₃, and thus it recorded a somewhat increased power factor despite the loss in electrical conductivity caused by the organic component, polypyrrole. Bi₂Te₃–polypyrrole also exhibited much lower thermal conductivity than pristine Bi₂Te₃ because of the phonon scattering effect at the interface. We successfully brought about the decoupling phenomenon of electrical and thermal properties by devising an inorganic/organic composite and adjusting its fabrication condition, thereby optimizing its thermoelectric performance, which is considered the predominant property for n-type binary Bi₂Te₃ reported so far.

Selective Enhancement in Phonon Scattering Leads to a High Thermoelectric Figure-of-Merit in Graphene Oxide-Encapsulated ZnO Nanocomposites

ZnO is a promising candidate for use as an environmentally friendly thermoelectric (TE) material. However, high thermal conductivity leading to a poor TE figure-of-merit (zT) needs to be addressed to achieve a significant TE efficiency for commercial applications. Here, we demonstrate that selective enhancement in phonon scattering leads to an increase in the zT of ZnO because of Al doping and reduced graphene oxide (RGO) encapsulation. These nanocomposites are synthesized via a facile and scalable method. The incorporation of 1 at% Al with 1.5 wt % RGO into ZnO has been found to show significant improvement in zT (0.52 at 1100 K), which is an order of magnitude larger compared to that of bare undoped ZnO. Photoluminescence and X-ray photoelectron spectroscopy measurements confirm that RGO encapsulation significantly quenches surface oxygen vacancies in ZnO along with nucleation of new interstitial Zn donor states. Tunneling spectroscopy performed on bare as well as composite particles reveals that the band gap of ∼3.4 eV for bare ZnO reduces effectively to ∼0.5 eV upon RGO encapsulation, facilitating charge transport. The electrical conductivity also benefits from high densification (>95%) achieved using the spark plasma sintering method, which also aids in reduction of graphene oxide into RGO. The same Al doping and RGO capping synergistically bring about drastic reduction of thermal conductivity, through enhanced interfacial and point-defect-phonon scatterings. These opposing effects on electrical and thermal conductivities lead to enhancement in the power factors as well as the zT value. Overall, a practically viable route has been demonstrated for the synthesis of oxide-RGO TE materials, which could find their potential applications in high-temperature TE power generation.

Bottom-Up Engineering Strategies for High-Performance Thermoelectric Materials

The recent advancements in thermoelectric materials are largely credited to two factors, namely established physical theories and advanced materials engineering methods. The developments in the physical theories have come a long way from the "phonon glass electron crystal" paradigm to the more recent band convergence and nanostructuring, which consequently results in drastic improvement in the thermoelectric figure of merit value. On the other hand, the progresses in materials fabrication methods and processing technologies have enabled the discovery of new physical mechanisms, hence further facilitating the emergence of high-performance thermoelectric materials. In recent years, many comprehensive review articles are focused on various aspects of thermoelectrics ranging from thermoelectric materials, physical mechanisms and materials process techniques in particular with emphasis on solid state reactions. While bottom-up approaches to obtain thermoelectric materials have widely been employed in thermoelectrics, comprehensive reviews on summarizing such methods are still rare. In this review, we will outline a variety of bottom-up strategies for preparing high-performance thermoelectric materials. In addition, state-of-art, challenges and future opportunities in this domain will be commented.

Dopant-Assisted Matrix Stabilization Enables Thermoelectric Performance Enhancement in n-Type Quantum Dot Films

Efficient thermoelectric generators require further progress in developing n-type semiconductors that combine low thermal conductivity with high electrical conductivity. By embedding colloidal quantum dots (CQDs) in a metal halide matrix (QDMH), the metal halide matrix can enhance phonon scattering, thus suppressing thermal transport; however, simultaneously achieving high electrical conductivity in such systems has previously been limited by the deleterious impact of a large density of interfaces on charge transport. Therefore, new strategies are needed to improve charge carrier transport without sacrificing matrix-enabled low thermal transport. Here, we report the use of chemical doping in the solution state to improve electron transport while maintaining low thermal transport in QDMH films. By incorporating cesium carbonate (Cs₂CO₃) salts as a dopant prior to matrix formation, we find that the dopant stabilizes the matrix in colloidal inks and enables efficient n-type doping in QDMH films. As a result, this strategy leads to an enhanced n-type thermoelectric behavior in solution-processed QDMH films near room temperature, with a thermal conductivity of 0.25 W m^-1 K^-1-significantly lower than in prior films based on organic-ligand-cross-linked CQD films (>0.6 W m^-1 K^-1) and spark-plasma-sintered CQD systems (>1 W m^-1 K^-1). This study provides a pathway to developing efficient n-type thermoelectric materials with low thermal conductivity using single-step deposition and low-temperature processing.

Room Temperature Syntheses of ZnO and Their Structures

ZnO has many technological applications which largely depend on its properties, which can be tuned by controlled synthesis. Ideally, the most convenient ZnO synthesis is carried out at room temperature in an aqueous solvent. However, the correct temperature values are often loosely defined. In the current paper, we performed the synthesis of ZnO in an aqueous solvent by varying the reaction and drying temperatures by 10 °C steps, and we monitored the synthesis products primarily by XRD). We found out that a simple direct synthesis of ZnO, without additional surfactant, pumping, or freezing, required both a reaction (TP) and a drying (TD) temperature of 40 °C. Higher temperatures also afforded ZnO, but lowering any of the TP or TD below the threshold value resulted either in the achievement of Zn(OH)2 or a mixture of Zn(OH)2/ZnO. A more detailed Rietveld analysis of the ZnO samples revealed a density variation of about 4% (5.44 to 5.68 gcm−3) with the synthesis temperature, and an increase of the nanoparticles’ average size, which was also verified by SEM images. The average size of the ZnO synthesized at TP = TD = 40 °C was 42 nm, as estimated by XRD, and 53 ± 10 nm, as estimated by SEM. For higher synthesis temperatures, they vary between 76 nm and 71 nm (XRD estimate) or 65 ± 12 nm and 69 ± 11 nm (SEM estimate) for TP = 50 °C, TD = 40 °C, or TP = TD = 60 °C, respectively. At TP = TD = 30 °C, micrometric structures aggregated in foils are obtained, which segregate nanoparticles of ZnO if TD is raised to 40 °C. The optical properties of ZnO obtained by UV-Vis reflectance spectroscopy indicate a red shift of the band gap by ~0.1 eV.

Effect of the Annealing Atmosphere on Crystal Phase and Thermoelectric Properties of Copper Sulfide

Cu_2-xS has become one of the most promising thermoelectric materials for application in the middle-high temperature range. Its advantages include the abundance, low cost, and safety of its elements and a high performance at relatively elevated temperatures. However, stability issues limit its operation current and temperature, thus calling for the optimization of the material performance in the middle temperature range. Here, we present a synthetic protocol for large scale production of covellite CuS nanoparticles at ambient temperature and atmosphere, and using water as a solvent. The crystal phase and stoichiometry of the particles are afterward tuned through an annealing process at a moderate temperature under inert or reducing atmosphere. While annealing under argon results in Cu_1.8S nanopowder with a rhombohedral crystal phase, annealing in an atmosphere containing hydrogen leads to tetragonal Cu_1.96S. High temperature X-ray diffraction analysis shows the material annealed in argon to transform to the cubic phase at ca. 400 K, while the material annealed in the presence of hydrogen undergoes two phase transitions, first to hexagonal and then to the cubic structure. The annealing atmosphere, temperature, and time allow adjustment of the density of copper vacancies and thus tuning of the charge carrier concentration and material transport properties. In this direction, the material annealed under Ar is characterized by higher electrical conductivities but lower Seebeck coefficients than the material annealed in the presence of hydrogen. By optimizing the charge carrier concentration through the annealing time, Cu_2-xS with record figures of merit in the middle temperature range, up to 1.41 at 710 K, is obtained. We finally demonstrate that this strategy, based on a low-cost and scalable solution synthesis process, is also suitable for the production of high performance Cu_2-xS layers using high throughput and cost-effective printing technologies.

Quantitative SEM characterisation of ceramic target prior and after magnetron sputtering: a case study of aluminium zinc oxide

Till now electron microscopy techniques have not been used to evaluate the plasma-target interactions undergone during the magnetron sputtering process. The destructive nature of this interaction severely alters the target microstructure. Utilising quantitative microscopy techniques can shed light on the complex plasma and solid-state processes involved which can ultimately lead to improved functional thin film deposition. As a representative functional material, aluminium-doped-zinc oxide (AZO) is an upcoming alternative to conventional transparent electrode wherein the process optimisation is of great importance. In this paper, we evaluate the pre- and post-sputter field emission scanning electron microscopy (FESEM) data for ceramic AZO target fabricated at three final sintering temperatures (1100°C, 1200°C and 1300°C). In all cases, grain boundaries are merged in addition to a visible reduction in the secondary phases which makes segmentation-based image analysis challenging. Through surface statistics (i.e. fractal dimension, autocorrelation length, texture aspect ratio and entropy) as a function of magnification we can quantify the electron microscopy image of the microstructure. We show that the plasma-microstructure interaction leads to an increase in autocorrelation length, texture aspect ratio and entropy for the optimum AZO ceramic sputtering target sintered at 1200°C. Furthermore, a maximum reduction in fractal dimension span (as determined by exponential regression) is also observed for 1200°C. In addition to the evaluation of plasma effects on sintering, our approach can provide a window towards understanding the underlying thin film growth mechanisms. We believe that this technique can be applied to the defect characterisation of a wide range of polycrystalline ceramic sputtering targets (e.g. ITO, CZTS, GAZO and so on) with the ultimate goal of improving the magnetron sputtering process and the resulting functional thin film. LAY DESCRIPTION: Magnetron sputtering allows scientists to make functional thin films on the order of the nanoscale. In this technique, atoms are plucked from a 'target' then placed onto a substrate forming a thin nanometric film: all thanks to magnets, a special power supply and the fourth state of matter (plasma). Understanding what is going on and how to make a 'good' thin film is important for making better light emitting diodes, solar cells and light sensors. Scientists use electron microscopy to see what is going on in the microstructure of the sputtered thin films to fine tune the sputtering recipe. Here, for the first time, we have applied electron microscopy to see the surface of the microstructure before and after magnetron sputtering. This will help us understanding the plasma-microstructure interaction allowing us to make more informed decisions when fine-tuning the sputtering process to get improved thin films. This is a case study of aluminium-doped zinc oxide (AZO) target that could potentially replace indium tin oxide (ITO), which is widely used as a transparent electrode in devices involving light and electricity. In this case, improved characteristics would be lower electrical resistivity and higher transmission of light. We show that it is possible to use a mathematical description (e.g. the fractal dimension) of the scanning electron microscopy picture to show a link between the target surface and the functional properties. Simple explanation of fractal dimensions by Sixty Symbols ○ https://www.youtube.com/watch?v=cmBljeC79Ls Experimental demonstration of magnetron sputtering by The Thought Emporium ○ https://www.youtube.com/watch?v=Cyu7etM-0Ko Introductory video on magnetron sputtering by Applied Science ○ https://www.youtube.com/watch?v=9OEz_e9C4KM Demonstration of AZO target fabrication and sputtering by Pradhyut Rajjkumar ○ https://www.youtube.com/watch?v=kTLaTJfNX3c Simple explanation of a DIY SEM by Applied Science ○ https://www.youtube.com/watch?v=VdjYVF4a6iU.