1
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Yu J, Mu H, Wang P, Li H, Yang Z, Ren J, Li Y, Mei L, Zhang J, Yu W, Cui N, Yuan J, Wu J, Lan S, Zhang G, Lin S. Anisotropic van der Waals Tellurene-Based Multifunctional, Polarization-Sensitive, In-Line Optical Device. ACS NANO 2024; 18:19099-19109. [PMID: 39001858 DOI: 10.1021/acsnano.4c03973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
Abstract
Polarization plays a paramount role in scaling the optical network capacity. Anisotropic two-dimensional (2D) materials offer opportunities to exploit optical polarization-sensitive responses in various photonic and optoelectronic applications. However, the exploration of optical anisotropy in fiber in-line devices, critical for ultrafast pulse generation and modulation, remains limited. In this study, we present a fiber-integrated device based on a single-crystalline tellurene nanosheet. Benefiting from the chiral-chain crystal lattice and distinct optical dichroism of tellurene, multifunctional optical devices possessing diverse excellent properties can be achieved. By inserting the in-line device into a 1.5 μm fiber laser cavity, we generated both linearly polarized and dual-wavelength mode-locking pulses with a degree of polarization of 98% and exceptional long-term stability. Through a twisted configuration of two tellurene nanosheets, we realized an all-optical switching operation with a fast response. The multifunctional device also serves as a broadband photodetector. Notably, bipolar polarization encoding communication at 1550 nm can be achieved without any external voltage. The device's multifunctionality and stability in ambient environments established a promising prototype for integrating polarization as an additional physical dimension in fiber optical networks, encompassing diverse applications in light generation, modulation, and detection.
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Affiliation(s)
- Jing Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, China
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Pu Wang
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Haozhe Li
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Zixin Yang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Jing Ren
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Yang Li
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Luyao Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Jian Yuan
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Sheng Lan
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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3
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Xu Y, Qi J, Ma C, He Q. Wet-Chemical Synthesis of Elemental 2D Materials. Chem Asian J 2024; 19:e202301152. [PMID: 38469659 DOI: 10.1002/asia.202301152] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 03/06/2024] [Accepted: 03/07/2024] [Indexed: 03/13/2024]
Abstract
Wet-chemical synthesis refers to the bottom-up chemical synthesis in solution, which is among the most popular synthetic approaches towards functional two-dimensional (2D) materials. It offers several advantages, including cost-effectiveness, high yields,, precious control over the production process. As an emerging family of 2D materials, elemental 2D materials (Xenes) have shown great potential in various applications such as electronics, catalysts, biochemistry,, sensing technologies due to their exceptional/exotic properties such as large surface area, tunable band gap,, high carrier mobility. In this review, we provide a comprehensive overview of the current state-of-the-art in wet-chemical synthesis of Xenes including tellurene, bismuthene, antimonene, phosphorene,, arsenene. The current solvent compositions, process parameters utilized in wet-chemical synthesis, their effects on the thickness, stability of the resulting Xenes are also presented. Key factors considered involves ligands, precursors, surfactants, reaction time, temperature. Finally, we highlight recent advances, existing challenges in the current application of wet-chemical synthesis for Xenes production, provide perspectives on future improvement.
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Affiliation(s)
- Yue Xu
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Junlei Qi
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Cong Ma
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Qiyuan He
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
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4
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Bi C, Wu T, Shao J, Jing P, Xu H, Xu J, Guo W, Liu Y, Zhan D. Evolution of the Electronic Properties of Tellurium Crystals with Plasma Irradiation Treatment. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:750. [PMID: 38727344 PMCID: PMC11085414 DOI: 10.3390/nano14090750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Revised: 04/19/2024] [Accepted: 04/23/2024] [Indexed: 05/12/2024]
Abstract
Tellurium exhibits exceptional intrinsic electronic properties. However, investigations into the modulation of tellurium's electronic properties through physical modification are notably scarce. Here, we present a comprehensive study focused on the evolution of the electronic properties of tellurium crystal flakes under plasma irradiation treatment by employing conductive atomic force microscopy and Raman spectroscopy. The plasma-treated tellurium experienced a process of defect generation through lattice breaking. Prior to the degradation of electronic transport performance due to plasma irradiation treatment, we made a remarkable observation: in the low-energy region of hydrogen plasma-treated tellurium, a notable enhancement in conductivity was unexpectedly detected. The mechanism underlying this enhancement in electronic transport performance was thoroughly elucidated by comparing it with the electronic structure induced by argon plasma irradiation. This study not only fundamentally uncovers the effects of plasma irradiation on tellurium crystal flakes but also unearths an unprecedented trend of enhanced electronic transport performance at low irradiation energies when utilizing hydrogen plasma. This abnormal trend bears significant implications for guiding the prospective application of tellurium-based 2D materials in the realm of electronic devices.
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Affiliation(s)
- Congzhi Bi
- Department of Physics, College of Physical Science and Technology, Research Institution for Biomimetics and Soft Matter, Xiamen University, Xiamen 361005, China;
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
| | - Tianyu Wu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
- College of Science, Beihua University, Jilin 132000, China
| | - Jingjing Shao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
| | - Pengtao Jing
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
| | - Hai Xu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
| | - Jilian Xu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
| | - Wenxi Guo
- Department of Physics, College of Physical Science and Technology, Research Institution for Biomimetics and Soft Matter, Xiamen University, Xiamen 361005, China;
| | - Yufei Liu
- Key Laboratory of Optoelectronic Technology & Systems, Chongqing University, Chongqing 400044, China
| | - Da Zhan
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (T.W.); (J.S.); (P.J.); (H.X.); (J.X.)
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An D, Zhang S, Zhai X, Yang W, Wu R, Zhang H, Fan W, Wang W, Chen S, Cojocaru-Mirédin O, Zhang XM, Wuttig M, Yu Y. Metavalently bonded tellurides: the essence of improved thermoelectric performance in elemental Te. Nat Commun 2024; 15:3177. [PMID: 38609361 PMCID: PMC11014947 DOI: 10.1038/s41467-024-47578-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Accepted: 04/03/2024] [Indexed: 04/14/2024] Open
Abstract
Elemental Te is important for semiconductor applications including thermoelectric energy conversion. Introducing dopants such as As, Sb, and Bi has been proven critical for improving its thermoelectric performance. However, the remarkably low solubility of these elements in Te raises questions about the mechanism with which these dopants can improve the thermoelectric properties. Indeed, these dopants overwhelmingly form precipitates rather than dissolve in the Te lattice. To distinguish the role of doping and precipitation on the properties, we have developed a correlative method to locally determine the structure-property relationship for an individual matrix or precipitate. We reveal that the conspicuous enhancement of electrical conductivity and power factor of bulk Te stems from the dopant-induced metavalently bonded telluride precipitates. These precipitates form electrically beneficial interfaces with the Te matrix. A quantum-mechanical-derived map uncovers more candidates for advancing Te thermoelectrics. This unconventional doping scenario adds another recipe to the design options for thermoelectrics and opens interesting pathways for microstructure design.
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Affiliation(s)
- Decheng An
- College of Chemistry, Taiyuan University of Technology, 030024, Taiyuan, China
| | - Senhao Zhang
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Xin Zhai
- School of Electronic Science & Engineering, Southeast University, 210096, Nanjing, China
| | - Wutao Yang
- College of Chemistry, Taiyuan University of Technology, 030024, Taiyuan, China
| | - Riga Wu
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Huaide Zhang
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Wenhao Fan
- Key Laboratory of Interface Science and Engineering in Advanced Materials, College of Materials Science and Engineering, Instrumental Analysis Center, Taiyuan University of Technology, 030024, Taiyuan, China
| | - Wenxian Wang
- Key Laboratory of Interface Science and Engineering in Advanced Materials, College of Materials Science and Engineering, Instrumental Analysis Center, Taiyuan University of Technology, 030024, Taiyuan, China
| | - Shaoping Chen
- Key Laboratory of Interface Science and Engineering in Advanced Materials, College of Materials Science and Engineering, Instrumental Analysis Center, Taiyuan University of Technology, 030024, Taiyuan, China
| | - Oana Cojocaru-Mirédin
- Department of Sustainable Systems Engineering (INATECH), Albert-Ludwigs-Universität Freiburg, 79110, Freiburg, Germany
| | - Xian-Ming Zhang
- College of Chemistry, Taiyuan University of Technology, 030024, Taiyuan, China.
- Key Laboratory of Interface Science and Engineering in Advanced Materials, College of Materials Science and Engineering, Instrumental Analysis Center, Taiyuan University of Technology, 030024, Taiyuan, China.
| | - Matthias Wuttig
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany.
- Peter Grünberg Institute (PGI 10), Forschungszentrum Jülich, 52428, Jülich, Germany.
| | - Yuan Yu
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany.
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6
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Sachdeva PK, Gupta S, Bera C. Engineering piezoelectricity at vdW interfaces of quasi-1D chains in 2D Tellurene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:215701. [PMID: 38335545 DOI: 10.1088/1361-648x/ad2805] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2023] [Accepted: 02/09/2024] [Indexed: 02/12/2024]
Abstract
Low-dimensional piezoelectrics have drawn attention to the realization in nano-scale devices with high integration density. A unique branch of 2D Tellurene bilayers formed of weakly interacting quasi-1D chains via van der Waals forces is found to exhibit piezoelectricity due to the semiconducting band gap and spatial inversion asymmetry. Various bilayer stackings are systematically examined using density functional theory, revealing optimal piezoelectricity when dipole arrangements are identical in each layer. Negative piezoelectricity has been observed in two of the stackings AA' and AA″ while other two stackings exhibit the usual positive piezoelectric effect. The layer-dependent 2D piezoelectricity (∣e222D ∣) increases with an increasing number of layers in contrast to the odd-even effect observed in h-BN and MoS2. Notably, the piezoelectric effect is observed in even-layered structures due to the homogeneous stacking in multilayers. Strain is found to enhance in-plane piezoelectricity by 4.5 times (-66.25 × 10-10C m-1at -5.1% strain) due to the increasing difference in Born effective charges of positively and negatively charged Te-atoms under compressive biaxial strains. Moreover, out-of-plane piezoelectricity is induced by applying an external electric field, thus implying Tellurene is a promising candidate for piezoelectric sensors.
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Affiliation(s)
- Parrydeep Kaur Sachdeva
- Institute of Nano Science and Technology, Sector-81, Knowledge City, Sahibzada Ajit Singh Nagar, Mohali, Punjab 140306, India
- University Institute of Engineering and Technology, Panjab University, Sector-25, Chandigarh 160014, India
- Department of Physics, Panjab University, Sector-14, Chandigarh 160014, India
| | - Shuchi Gupta
- University Institute of Engineering and Technology, Panjab University, Sector-25, Chandigarh 160014, India
| | - Chandan Bera
- Institute of Nano Science and Technology, Sector-81, Knowledge City, Sahibzada Ajit Singh Nagar, Mohali, Punjab 140306, India
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7
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Zhang W, Ma Z, Wang J, Shao B, Zuo X. Tunability of electronic properties in the 2D MoS 2/α-tellurene/WS 2 heterotrilayer via biaxial strain and electric field. Phys Chem Chem Phys 2024; 26:6362-6371. [PMID: 38315005 DOI: 10.1039/d3cp06002k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Alpha-tellurene (α-Te), a two-dimensional (2D) material that has been theoretically predicted and experimentally verified, has garnered significant attention due to its unique properties. In this study, we investigated the 2D trilayer MoS2/α-Te/WS2 van der Waals heterostructure with different stacking orders using first-principles calculations. Our results indicate that this heterotrilayer exhibits an intrinsic type-I band alignment and an indirect band gap similar to that of monolayer α-Te. Notably, the band edges of the heterostructure can be modulated by biaxial strain and an external electric field, enabling these edges to arise from different monolayers. This controlled manipulation facilitates the effective separation of photogenerated electron-hole pairs and prolongs the carrier lifetime. Moreover, the heterostructure can undergo a transition from an indirect to a direct band gap under biaxial compressive strain or a moderate negative electric field, and semiconductor-to-metal transition can also be achieved by intensifying the biaxial strain and external electric field. Overall, our research provides valuable theoretical insights into the potential applications of α-Te-based heterostructures, rendering them promising candidates for the next generation of nanodevices.
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Affiliation(s)
- Wenli Zhang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
| | - Zhuang Ma
- School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, China
| | - Jing Wang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
| | - Bin Shao
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Nankai University, Tianjin 300350, China
| | - Xu Zuo
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Tianjin 300350, China
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8
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Huang X, Xiong R, Hao C, Li W, Sa B, Wiebe J, Wiesendanger R. Experimental Realization of Monolayer α-Tellurene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309023. [PMID: 38010233 DOI: 10.1002/adma.202309023] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Revised: 11/23/2023] [Indexed: 11/29/2023]
Abstract
2D materials emerge as a versatile platform for developing next-generation devices. The experimental realization of novel artificial 2D atomic crystals, which does not have bulk counterparts in nature, is still challenging and always requires new physical or chemical processes. Monolayer α-tellurene is predicted to be a stable 2D allotrope of tellurium (Te), which has great potential for applications in high-performance field-effect transistors. However, the synthesis of monolayer α-tellurene remains elusive because of its complex lattice configuration, in which the Te atoms are stacked in tri-layers in an octahedral fashion. Here, a self-assemble approach, using three atom-long Te chains derived from the dynamic non-equilibrium growth of an a-Si:Te alloy as building blocks, is reported for the epitaxial growth of monolayer α-tellurene on a Sb2 Te3 substrate. By combining scanning tunneling microscopy/spectroscopy with density functional theory calculations, the surface morphology and electronic structure of monolayer α-tellurene are revealed and the underlying growth mechanism is determined. The successful synthesis of monolayer α-tellurene opens up the possibility for the application of this new single-element 2D material in advanced electronic devices.
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Affiliation(s)
- Xiaochun Huang
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Rui Xiong
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Chunxue Hao
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
- Institute of Nanostructures and Solid State Physics, Centre for Hybrid Nanostructures (CHyN), University of Hamburg, 22761, Hamburg, Germany
| | - Wenbin Li
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Baisheng Sa
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Jens Wiebe
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
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9
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Wang M, Hu Y, Pu J, Zi Y, Huang W. Emerging Xene-Based Single-Atom Catalysts: Theory, Synthesis, and Catalytic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2303492. [PMID: 37328779 DOI: 10.1002/adma.202303492] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Revised: 06/07/2023] [Indexed: 06/18/2023]
Abstract
In recent years, the emergence of novel 2D monoelemental materials (Xenes), e.g., graphdiyne, borophene, phosphorene, antimonene, bismuthene, and stanene, has exhibited unprecedented potentials for their versatile applications as well as addressing new discoveries in fundamental science. Owing to their unique physicochemical, optical, and electronic properties, emerging Xenes have been regarded as promising candidates in the community of single-atom catalysts (SACs) as single-atom active sites or support matrixes for significant improvement in intrinsic activity and selectivity. In order to comprehensively understand the relationships between the structure and property of Xene-based SACs, this review represents a comprehensive summary from theoretical predictions to experimental investigations. Firstly, theoretical calculations regarding both the anchoring of Xene-based single-atom active sites on versatile support matrixes and doping/substituting heteroatoms at Xene-based support matrixes are briefly summarized. Secondly, controlled synthesis and precise characterization are presented for Xene-based SACs. Finally, current challenges and future opportunities for the development of Xene-based SACs are highlighted.
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Affiliation(s)
- Mengke Wang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Yi Hu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Junmei Pu
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - You Zi
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu, 226019, P. R. China
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10
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Zha J, Xia Y, Shi S, Huang H, Li S, Qian C, Wang H, Yang P, Zhang Z, Meng Y, Wang W, Yang Z, Yu H, Ho JC, Wang Z, Tan C. A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308502. [PMID: 37862005 DOI: 10.1002/adma.202308502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Indexed: 10/21/2023]
Abstract
The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈108 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated.
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Affiliation(s)
- Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Chen Qian
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Huide Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, Guangdong, 518118, China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Hongyu Yu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
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11
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Wang H, Zou H, Wang C, Lv S, Jin Y, Hu H, Wang X, Chi Y, Yang X. Controllable Synthesis, Formation Mechanism, and Photocatalytic Activity of Tellurium with Various Nanostructures. MICROMACHINES 2023; 15:1. [PMID: 38276829 PMCID: PMC10818636 DOI: 10.3390/mi15010001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Revised: 12/10/2023] [Accepted: 12/14/2023] [Indexed: 01/27/2024]
Abstract
Telluriums (Te) with various nanostructures, including particles, wires, and sheets, are controllably synthesized by adjusting the content of polyvinylpyrrolidone (PVP) in a facile solvothermal reaction. Te nanostructures all have complete grain sizes with excellent crystallinity and mesopore structures. Further, the formation mechanisms of Te nanostructures are proposed to be that the primary nuclei of Te are released from the reduction of TeO32- using N2H4·H2O, and then grow into various nanostructures depending on the different content of PVP. These nanostructures of Te all exhibit the photocatalytic activities for the degradation of MB and H2 production under visible light irradiation, especially Te nanosheets, which have the highest efficiencies of degradation (99.8%) and mineralization (65.5%) at 120 min. In addition, compared with pure Te nanosheets, the rate of H2 production increases from 412 to 795 μmol∙h-1∙g-1 after the introduction of Pt, which increases the output by nearly two times. The above investigations indicate that Te with various nanostructures is a potential photocatalyst in the field of degradation of organic pollutants and H2 fuel cells.
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Affiliation(s)
- Huan Wang
- Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, China; (H.W.); (C.W.); (S.L.); (Y.C.)
- Department of Materials Science, Jilin Jianzhu University, Changchun 130118, China; (H.Z.); (Y.J.); (H.H.)
| | - Hanlin Zou
- Department of Materials Science, Jilin Jianzhu University, Changchun 130118, China; (H.Z.); (Y.J.); (H.H.)
| | - Chao Wang
- Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, China; (H.W.); (C.W.); (S.L.); (Y.C.)
| | - Sa Lv
- Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, China; (H.W.); (C.W.); (S.L.); (Y.C.)
| | - Yujie Jin
- Department of Materials Science, Jilin Jianzhu University, Changchun 130118, China; (H.Z.); (Y.J.); (H.H.)
| | - Hongliang Hu
- Department of Materials Science, Jilin Jianzhu University, Changchun 130118, China; (H.Z.); (Y.J.); (H.H.)
| | - Xinwei Wang
- Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Yaodan Chi
- Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, China; (H.W.); (C.W.); (S.L.); (Y.C.)
| | - Xiaotian Yang
- Department of Chemistry, Jilin Normal University, Siping 136000, China
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12
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Yuan Y, Peng X, Weng X, He J, Liao C, Wang Y, Liu L, Zeng S, Song J, Qu J. Two-dimensional nanomaterials as enhanced surface plasmon resonance sensing platforms: Design perspectives and illustrative applications. Biosens Bioelectron 2023; 241:115672. [PMID: 37716156 DOI: 10.1016/j.bios.2023.115672] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 08/16/2023] [Accepted: 09/04/2023] [Indexed: 09/18/2023]
Abstract
Both increasing demand for ultrasensitive detection in the scientific community and significant new breakthroughs in materials science field have inspired and promoted the development of new-generation multifunctional plasmonic sensing platforms by adopting promising plasmonic nanomaterials. Recently, high-quality surface plasmon resonance (SPR) sensors, assisted by two dimensional (2D) nanomaterials including 2D van der Waals (vdWs) materials (such as graphene/graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, antimonene, tellurene, MXenes, and metal oxides), 2D metal-organic frameworks (MOFs), 2D hyperbolic metamaterials (HMMs), and 2D optical metasurfaces, have emerged as a class of novel plasmonic sensing platforms that show unprecedented detection sensitivity and impressive performance. This review of recent progress in 2D nanomaterials-enhanced SPR platforms will highlight their compelling plasmonic enhancement features, working mechanisms, and design methodologies, as well as discuss illustrative practical applications. Hence, it is of great importance to describe the latest research progress in 2D nanomaterials-enhanced SPR sensing cases. In this review, we present some concepts of SPR enhanced by 2D nanomaterials, including the basic principles of SPR, signal modulation approaches, and working enhancement mechanisms for various 2D materials-enhanced SPR systems. In addition, we also demonstrate a detailed categorization of 2D nanomaterials-enhanced SPR sensing platforms and comment on their ability to realize ultrasensitive SPR detection. Finally, we conclude with future perspectives for exploring a new generation of 2D nanomaterials-based sensors.
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Affiliation(s)
- Yufeng Yuan
- School of Electronic Engineering and Intelligentization, Dongguan University of Technology, Dongguan, Guangdong, 523808, China; State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Xiao Peng
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Xiaoyu Weng
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Jun He
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Changrui Liao
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Yiping Wang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Liwei Liu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Shuwen Zeng
- Light, Nanomaterials & Nanotechnologies (L2n), CNRS-EMR 7004, Université de Technologie de Troyes, 10000, Troyes, France.
| | - Jun Song
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Junle Qu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
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13
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Sari B, Zeltmann SE, Zhao C, Pelz PM, Javey A, Minor AM, Ophus C, Scott MC. Analysis of Strain and Defects in Tellurium-WSe 2 Moiré Heterostructures Using Scanning Nanodiffraction. ACS NANO 2023; 17:22326-22333. [PMID: 37956410 PMCID: PMC10690779 DOI: 10.1021/acsnano.3c04283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2023] [Revised: 11/02/2023] [Accepted: 11/03/2023] [Indexed: 11/15/2023]
Abstract
In recent years, there has been an increasing focus on 2D nongraphene materials that range from insulators to semiconductors to metals. As a single-elemental van der Waals semiconductor, tellurium (Te) has captivating anisotropic physical properties. Recent work demonstrated growth of ultrathin Te on WSe2 with the atomic chains of Te aligned with the armchair directions of the substrate using physical vapor deposition (PVD). In this system, a moiré superlattice is formed where micrometer-scale Te flakes sit on top of the continuous WSe2 film. Here, we determined the precise orientation of the Te flakes with respect to the substrate and detailed structure of the resulting moiré lattice by combining electron microscopy with image simulations. We directly visualized the moiré lattice using center of mass-differential phase contrast (CoM-DPC). We also investigated the local strain within the Te/WSe2 layered materials using scanning nanodiffraction techniques. There is a significant tensile strain at the edges of flakes along the direction perpendicular to the Te chain direction, which is an indication of the preferred orientation for the growth of Te on WSe2. In addition, we observed local strain relaxation regions within the Te film, specifically attributed to misfit dislocations, which we characterize as having a screw-like nature. The detailed structural analysis gives insight into the growth mechanisms and strain relaxation in this moiré heterostructure.
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Affiliation(s)
- Bengisu Sari
- Department
of Materials Science and Engineering, University
of California Berkeley, Berkeley, California 94720, United States
- The
National Center for Electron Microscopy, Molecular Foundry, Berkeley, California 94720, United States
- Materials
Science Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720-8099, United States
| | - Steven E. Zeltmann
- Department
of Materials Science and Engineering, University
of California Berkeley, Berkeley, California 94720, United States
| | - Chunsong Zhao
- Department
of Materials Science and Engineering, University
of California Berkeley, Berkeley, California 94720, United States
- Materials
Science Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720-8099, United States
- Department
of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, California 94720, United States
| | - Philipp M. Pelz
- Institute
of Micro- and Nanostructure Research, Center for Nanoanalysis and
Electron Microscopy, Interdisciplinary Center for Nanostructured Films, Friedrich-Alexander-Universitat Erlangen-Nurnberg, Erlangen 91058, Germany
| | - Ali Javey
- Materials
Science Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720-8099, United States
- Department
of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, California 94720, United States
| | - Andrew M. Minor
- Department
of Materials Science and Engineering, University
of California Berkeley, Berkeley, California 94720, United States
- The
National Center for Electron Microscopy, Molecular Foundry, Berkeley, California 94720, United States
| | - Colin Ophus
- The
National Center for Electron Microscopy, Molecular Foundry, Berkeley, California 94720, United States
| | - Mary C. Scott
- Department
of Materials Science and Engineering, University
of California Berkeley, Berkeley, California 94720, United States
- The
National Center for Electron Microscopy, Molecular Foundry, Berkeley, California 94720, United States
- Materials
Science Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720-8099, United States
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14
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Kim C, Hur N, Yang J, Oh S, Yeo J, Jeong HY, Shong B, Suh J. Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films. ACS NANO 2023; 17:15776-15786. [PMID: 37432767 DOI: 10.1021/acsnano.3c03559] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2023]
Abstract
Scalable production and integration techniques for van der Waals (vdW) layered materials are vital for their implementation in next-generation nanoelectronics. Among available approaches, perhaps the most well-received is atomic layer deposition (ALD) due to its self-limiting layer-by-layer growth mode. However, ALD-grown vdW materials generally require high processing temperatures and/or additional postdeposition annealing steps for crystallization. Also, the collection of ALD-producible vdW materials is rather limited by the lack of a material-specific tailored process design. Here, we report the annealing-free wafer-scale growth of monoelemental vdW tellurium (Te) thin films using a rationally designed ALD process at temperatures as low as 50 °C. They exhibit exceptional homogeneity/crystallinity, precise layer controllability, and 100% step coverage, all of which are enabled by introducing a dual-function co-reactant and adopting a so-called repeating dosing technique. Electronically, vdW-coupled and mixed-dimensional vertical p-n heterojunctions with MoS2 and n-Si, respectively, are demonstrated with well-defined current rectification as well as spatial uniformity. Additionally, we showcase an ALD-Te-based threshold switching selector with fast switching time (∼40 ns), selectivity (∼104), and low Vth (∼1.3 V). This synthetic strategy allows the low-thermal-budget production of vdW semiconducting materials in a scalable fashion, thereby providing a promising approach for monolithic integration into arbitrary 3D device architectures.
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Affiliation(s)
- Changhwan Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Namwook Hur
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Jiho Yang
- Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Saeyoung Oh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Jeongin Yeo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Bonggeun Shong
- Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
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15
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Shangguan L, He LB, Ran YT, Hong H, Zhu JH, Gao YT, Sun LT. Hydrothermal Synthesis of Te Nanosheets: Growth Mechanism and Electrical Property. ACS APPLIED MATERIALS & INTERFACES 2023; 15:38707-38715. [PMID: 37527542 DOI: 10.1021/acsami.3c08118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Hydrothermal synthesis is a highly efficient way to yield multiform Te nanosheets. However, the growth mechanisms and property discrepancies between different types of Te nanosheets are still unclear. In this paper, we perform an investigation on this issue by monitoring the hydrothermally synthesized Te nanosheets at different growth stages with transmission electron microscopy and electrical tests. Three main types of Te nanosheets and their variants are revealed including trapezoidal and "V"-shaped configurations. It is found that the different types of Te nanosheets dominate at different reaction stages, indicating a sequential growth scenario. Surfactants and surface energy co-determine the growth kinetics, while the crystallographic attachments lead to specifically included angles of 74° and 41° in the "V"-shaped Te nanosheets. The fractions of the three main types of Te nanosheets as a function of reaction time are statistically tracked, and their crystalline structures, interfaces, and preferential growth orientations are uncovered. Moreover, the electrical properties of the Te nanosheets are tested, and the results show an interface-related feature. These findings provide some new insights into the synthesis and property of low-dimensional Te functional materials.
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Affiliation(s)
- Lei Shangguan
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Long-Bing He
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
- Centre for Advanced Materials and Manufacture, Joint Research Institute of Southeast University and Monash University, Suzhou 215123, P. R. China
| | - Ya-Ting Ran
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Hua Hong
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Jiong-Hao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Yu-Tian Gao
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Li-Tao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
- Centre for Advanced Materials and Manufacture, Joint Research Institute of Southeast University and Monash University, Suzhou 215123, P. R. China
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16
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Zhu H, Fan L, Wang K, Liu H, Zhang J, Yan S. Progress in the Synthesis and Application of Tellurium Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2057. [PMID: 37513066 PMCID: PMC10384241 DOI: 10.3390/nano13142057] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Revised: 07/04/2023] [Accepted: 07/04/2023] [Indexed: 07/30/2023]
Abstract
In recent decades, low-dimensional nanodevices have shown great potential to extend Moore's Law. The n-type semiconductors already have several candidate materials for semiconductors with high carrier transport and device performance, but the development of their p-type counterparts remains a challenge. As a p-type narrow bandgap semiconductor, tellurium nanostructure has outstanding electrical properties, controllable bandgap, and good environmental stability. With the addition of methods for synthesizing various emerging tellurium nanostructures with controllable size, shape, and structure, tellurium nanomaterials show great application prospects in next-generation electronics and optoelectronic devices. For tellurium-based nanomaterials, scanning electron microscopy and transmission electron microscopy are the main characterization methods for their morphology. In this paper, the controllable synthesis methods of different tellurium nanostructures are reviewed, and the latest progress in the application of tellurium nanostructures is summarized. The applications of tellurium nanostructures in electronics and optoelectronics, including field-effect transistors, photodetectors, and sensors, are highlighted. Finally, the future challenges, opportunities, and development directions of tellurium nanomaterials are prospected.
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Affiliation(s)
- Hongliang Zhu
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Fan
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Kaili Wang
- School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Hao Liu
- School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jiawei Zhang
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Shancheng Yan
- School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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17
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Chen H, Wang M, Huang W. Lead Monoxide Nanostructures for Nanophotonics: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1842. [PMID: 37368272 DOI: 10.3390/nano13121842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Revised: 06/05/2023] [Accepted: 06/07/2023] [Indexed: 06/28/2023]
Abstract
Black-phosphorus-analog lead monoxide (PbO), as a new emerging 2D material, has rapidly gained popularity in recent years due to its unique optical and electronic properties. Recently, both theoretical prediction and experimental confirmation have revealed that PbO exhibits excellent semiconductor properties, including a tunable bandgap, high carrier mobility, and excellent photoresponse performance, which is undoubtedly of great interest to explore its practical application in a variety of fields, especially in nanophotonics. In this minireview, we firstly summarize the synthesis of PbO nanostructures with different dimensionalities, then highlight the recent progress in the optoelectronics/photonics applications based on PbO nanostructures, and present some personal insights on the current challenges and future opportunities in this research area. It is anticipated that this minireview can pave the way to fundamental research on functional black-phosphorus-analog PbO-nanostructure-based devices to meet the growing demands for next-generation systems.
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Affiliation(s)
- Hongyan Chen
- Engineering Training Center, Nantong University, Nantong 226019, China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, China
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18
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Xing C, Li Z, Bang J, Wei S, Peng Z. One-dimensional TeSe nano-heterojunction: formation, calculations, carrier dynamics, and application in broad-spectrum photodetectors. NANOSCALE 2023; 15:8800-8813. [PMID: 37102599 DOI: 10.1039/d3nr00593c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
Seawater contains many electrolytes, is abundant in nature, environmentally friendly, and chemically stable, and exhibits substantial potential for replacement of traditional inorganic electrolytes in photoelectrochemical-type photodetectors (PDs). Herein, one-dimensional semiconductor TeSe nanorods (NRs) with core-shell nanostructures were reported, and their morphology, optical behavior, electronic structure, and photoinduced carrier dynamics were systematically investigated. As photosensitizers, the as-resultant TeSe NRs were assembled into PDs, and the influence of the bias potential, light wavelength and intensity, and the concentration of seawater on the photo-response of TeSe NR-based PDs was evaluated. These PDs exhibited favorable photo-response performance upon illumination with light in the ultraviolet-visible-near-infrared (UV-Vis-NIR) range and even simulated sunlight. Moreover, the TeSe NR-based PDs also exhibited a long duration and cycling stability of its on-off switching and might be useful in marine monitoring.
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Affiliation(s)
- Chenyang Xing
- Center for Stretchable Electronics and NanoSensors, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Zihao Li
- Center for Stretchable Electronics and NanoSensors, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Jian Bang
- Center for Stretchable Electronics and NanoSensors, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Songrui Wei
- Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Zhengchun Peng
- Center for Stretchable Electronics and NanoSensors, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
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19
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Yan Y, Li M, Xia K, Yang K, Wu D, Li L, Fei G, Gan W. A two-dimensional Te/ReS 2 van der Waals heterostructure photodetector with high photoresponsivity and fast photoresponse. NANOSCALE 2023; 15:7730-7736. [PMID: 37060126 DOI: 10.1039/d2nr07185a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) semiconductors are the building blocks for high-performance optoelectronic devices. However, the performance of photoconductive photodetectors based on 2D semiconductors is hampered by low photoresponsivity and large dark current. Herein, a van der Waals heterostructure (vdWH) composed of rhenium disulfide (ReS2) and tellurium (Te) is fabricated. The Te/ReS2 vdWH photodetector exhibits a sensitive and broadband photoresponse and has high photoresponse on/off ratios under ultraviolet and visible light illumination, especially over 102 in visible light. The Te/ReS2 vdWH photodetector achieves the responsivity of 7.9 A W-1 at 365 nm, 3.02 A W-1 at 450 nm, 2.37 A W-1 at 532 nm, and 2.45 A W-1 at 660 nm. In addition, the device achieves a high specific detectivity of 1011 Jones and a fast photoresponse speed of 11.9 μs. Such high responsivity could be attributed to the efficient absorption of phonons by the Te/ReS2 vdWH and the high-quality heterostructure interfaces with a small amount of trap states. The highly crystalline structure of Te/ReS2 with a low density of defects reduces the grain boundary scattering, leading to the rapid diffusion of charge carriers. Moreover, the Te/ReS2 vdWH device exhibits a photovoltaic effect and can be employed as a self-powered photodetector (SPPD), which is sensitive to visible light of 450 nm, 532 nm, and 660 nm. Our findings demonstrate that the Te/ReS2 vdWH photodetector is an ideal building block for the next-generation electronic and optoelectronic devices in practical applications.
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Affiliation(s)
- Yafei Yan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Minxin Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Kai Xia
- University of Science and Technology of China, Hefei 230026, P. R. China
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Kemeng Yang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Dun Wu
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Liang Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Guangtao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Wei Gan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
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20
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Chen A, Ye S, Wang Z, Han Y, Cai J, Li J. Machine-learning-assisted rational design of 2D doped tellurene for fin field-effect transistor devices. PATTERNS 2023; 4:100722. [PMID: 37123447 PMCID: PMC10140614 DOI: 10.1016/j.patter.2023.100722] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 10/18/2022] [Accepted: 03/08/2023] [Indexed: 04/09/2023]
Abstract
Fin field-effect transistors (FinFETs) have been widely used in electronic devices on account of their excellent performance, but this new type of device is facing many challenges because of size constraints. Two-dimensional (2D) materials with a layer structure can meet the required thickness of FinFETs and provide ideal carrier transport performance. In this work, we used 2D tellurene as the parent material and modified it with doping techniques to improve electronic device performance. High-performance FinFET devices were prepared with 23 systems screened from 385 doping systems by a combination of first-principle calculations and a machine-learning (ML) model. Moreover, theoretical calculations demonstrated that 1S1@Te and 2S2@Te have high carrier mobility and stability with an electron mobility and a hole mobility of 6.211 × 104 cm2 V-1 S-1 and 1.349 × 104 cm2 V-1 S-1, respectively. This work can provide a reference for subsequent experiments and advance the development of functional materials by using an ML-assisted design paradigm.
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Affiliation(s)
- An Chen
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Simin Ye
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhilong Wang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yanqiang Han
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Junfei Cai
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jinjin Li
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
- Corresponding author
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21
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Alsulami A, Alharbi M, Alsaffar F, Alolaiyan O, Aljalham G, Albawardi S, Alsaggaf S, Alamri F, Tabbakh TA, Amer MR. Lattice Transformation from 2D to Quasi 1D and Phonon Properties of Exfoliated ZrS 2 and ZrSe 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205763. [PMID: 36585385 DOI: 10.1002/smll.202205763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Recent reports on thermal and thermoelectric properties of emerging 2D materials have shown promising results. Among these materials are Zirconium-based chalcogenides such as zirconium disulfide (ZrS2 ), zirconium diselenide (ZrSe2 ), zirconium trisulfide (ZrS3 ), and zirconium triselenide (ZrSe3 ). Here, the thermal properties of these materials are investigated using confocal Raman spectroscopy. Two different and distinctive Raman signatures of exfoliated ZrX2 (where X = S or Se) are observed. For 2D-ZrX2 , Raman modes are in alignment with those reported in literature. However, for quasi 1D-ZrX2 , Raman modes are identical to exfoliated ZrX3 nanosheets, indicating a major lattice transformation from 2D to quasi-1D. Raman temperature dependence for ZrX2 are also measured. Most Raman modes exhibit a linear downshift dependence with increasing temperature. However, for 2D-ZrS2 , a blueshift for A1g mode is detected with increasing temperature. Finally, phonon dynamics under optical heating for ZrX2 are measured. Based on these measurements, the calculated thermal conductivity and the interfacial thermal conductance indicate lower interfacial thermal conductance for quasi 1D-ZrX2 compared to 2D-ZrX2 , which can be attributed to the phonon confinement in 1D. The results demonstrate exceptional thermal properties for Zirconium-based materials, making them ideal for thermoelectric device applications and future thermal management strategies.
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Affiliation(s)
- Awsaf Alsulami
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Majed Alharbi
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Fadhel Alsaffar
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Olaiyan Alolaiyan
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Ghadeer Aljalham
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Shahad Albawardi
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Sarah Alsaggaf
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Faisal Alamri
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Thamer A Tabbakh
- National Center for Nanotechnology, Materials Science Institute, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Moh R Amer
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA
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22
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Li X, Chen P, Xia Y, Weng J, Chen M, He T, Li Y, Cheng J, Zhang L. Synthesis of Ligand-Induced Chiral Tellurium Nanocrystals. J Phys Chem Lett 2022; 13:11669-11677. [PMID: 36511504 DOI: 10.1021/acs.jpclett.2c03215] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Chiral tellurium nanoparticles have recently garnered tremendous attention as emerging inorganic nanomaterials with intrinsically chiral space groups owing to their potential in next-generation stereosynthesis, spintronics, and optoelectronics. Inspired by the chiral ligand-mediated synthetic strategy, we herein present hydrothermal-assisted synthesis of chiral polyhedral tellurium nanoparticles that provides differed chirogenesis than that of particles fabricated by wet chemistry in recent studies; the thiolated cysteine molecules change the morphology of tellurium nanoparticles from fundamental two-dimensional shapes to chiral three-dimensional polyhedra owing to the screw dislocation effects observed only during nanoparticle growth. However, the nanoparticles do not exhibit chiral behaviors at the nucleation stage. Further investigation indicates that the growth of chiral polyhedral tellurium nanoparticles is overwhelmingly affected by parameters such as the hydrothermal reaction time, amount of polyvinylpyrrolidone, and species of chiral molecules. We believe that these findings can provide new insights into the fundamental relationships among structural chirality, chiral ligands, screw dislocations, and chiral space groups in principle.
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Affiliation(s)
- Xudong Li
- Ministry-of-Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan430062, P. R. China
| | - Peixian Chen
- Ministry-of-Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan430062, P. R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, P. R. China
| | - Yong Xia
- Ministry-of-Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan430062, P. R. China
| | - Ji Weng
- Ministry-of-Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan430062, P. R. China
| | - Meijuan Chen
- Ministry-of-Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan430062, P. R. China
| | - Tingchao He
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, P. R. China
| | - Yiwen Li
- Ministry-of-Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan430062, P. R. China
| | - Jiaji Cheng
- Ministry-of-Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan430062, P. R. China
| | - Lei Zhang
- Ministry-of-Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan430062, P. R. China
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23
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Li J, Cao D, Chen F, Wu D, Yan Y, Du J, Yang J, Tian Y, Li X, Lin P. Polarity-Reversible Te/WSe 2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53202-53212. [PMID: 36395442 DOI: 10.1021/acsami.2c17331] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
As a p-type elemental material with high carrier mobility, superior ambient stability, and anisotropic crystal structure, emerging two-dimensional (2D) tellurium (Te) has been considered a successor to black phosphorus for developing infrared-related optoelectronics. Nevertheless, the lack of a scalable thickness engineering strategy remains an obstacle to unleashing its full potential. Te-based electronics with logic functions are also less explored. Herein, we propose a novel wet-chemical thinning method for 2D Te, with the merits of scalability and site-specific thickness patterning capability. A polarity-switchable van der Waals (vdW) heterodiode with a high rectification ratio of 2.4 × 103 is realized on the basis of Te/WSe2. The electronic application of this unique characteristic is demonstrated by fabricating a logic half-wave rectifier, in which the rectifying states are switchable via electrostatic gating control. Besides, the narrow band gap of Te endows the device with a broad spectral response from visible to short-wave infrared. The room-temperature responsivity reaches 5.2 A W-1 at the telecom wavelength of 1.55 μm, with an external quantum efficiency of 420% and detectivity of 6.8 × 109 Jones. In particular, owing to the intrinsic in-plane anisotropy of Te, the device exhibits a favorable photocurrent anisotropic ratio of ∼3. Our study demonstrates the enormous potential of Te for novel electronics, promoting the development of elemental 2D materials.
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Affiliation(s)
- Juanjuan Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Dingwen Cao
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Fangfang Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Yong Yan
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Junli Du
- State Grid Henan Electric Power Research Institute, Zhengzhou, Henan 450052, People's Republic of China
| | - Jinke Yang
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Yongtao Tian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
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24
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Xie Z, Duo Y, Fan T, Zhu Y, Feng S, Li C, Guo H, Ge Y, Ahmed S, Huang W, Liu H, Qi L, Guo R, Li D, Prasad PN, Zhang H. Light-induced tumor theranostics based on chemical-exfoliated borophene. LIGHT, SCIENCE & APPLICATIONS 2022; 11:324. [PMID: 36369148 PMCID: PMC9652458 DOI: 10.1038/s41377-022-00980-9] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2022] [Revised: 08/23/2022] [Accepted: 09/09/2022] [Indexed: 06/03/2023]
Abstract
Among 2D materials (Xenes) which are at the forefront of research activities, borophene, is an exciting new entry due to its uniquely varied optical, electronic, and chemical properties in many polymorphic forms with widely varying band gaps including the lightest 2D metallic phase. In this paper, we used a simple selective chemical etching to prepare borophene with a strong near IR light-induced photothermal effect. The photothermal efficiency is similar to plasmonic Au nanoparticles, with the added benefit of borophene being degradable due to electron deficiency of boron. We introduce this selective chemical etching process to obtain ultrathin and large borophene nanosheets (thickness of ~4 nm and lateral size up to ~600 nm) from the precursor of AlB2. We also report first-time observation of a selective Acid etching behavior showing HCl etching of Al to form a residual B lattice, while HF selectively etches B to yield an Al lattice. We demonstrate that through surface modification with polydopamine (PDA), a biocompatible smart delivery nanoplatform of B@PDA can respond to a tumor environment, exhibiting an enhanced cellular uptake efficiency. We demonstrate that borophene can be more suitable for safe photothermal theranostic of thick tumor using deep penetrating near IR light compared to gold nanoparticles which are not degradable, thus posing long-term toxicity concerns. With about 40 kinds of borides, we hope that our work will open door to more discoveries of this top-down selective etching approach for generating borophene structures with rich unexplored thermal, electronic, and optical properties for many other technological applications.
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Affiliation(s)
- Zhongjian Xie
- Institute of Pediatrics, Shenzhen Children's Hospital, Shenzhen, Guangdong, China
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics; International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen Institute of Translational Medicine, Department of Otolaryngology, Shenzhen Second People's Hospital, the First Affiliated Hospital, Institute of Microscale Optoelectronics, Shenzhen University, 518060, Shenzhen, China
| | - Yanhong Duo
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics; International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen Institute of Translational Medicine, Department of Otolaryngology, Shenzhen Second People's Hospital, the First Affiliated Hospital, Institute of Microscale Optoelectronics, Shenzhen University, 518060, Shenzhen, China
- Department of Microbiology, Tumor and Cell Biology (MTC), Karolinska Institute, Stockholm, Sweden
| | - Taojian Fan
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics; International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen Institute of Translational Medicine, Department of Otolaryngology, Shenzhen Second People's Hospital, the First Affiliated Hospital, Institute of Microscale Optoelectronics, Shenzhen University, 518060, Shenzhen, China
| | - Yao Zhu
- Shenzhen Medical Ultrasound Engineering Center, Department of Ultrasonography, Shenzhen People's Hospital, Second Clinical Medical College of Jinan University, First Clinical Medical College of Southern University of Science and Technology, 518020, Shenzhen, China
| | - Shuai Feng
- Optoelectronics Research Center, School of Science, Minzu University of China, 100081, Beijing, PR China
| | - Chuanbo Li
- Optoelectronics Research Center, School of Science, Minzu University of China, 100081, Beijing, PR China
| | - Honglian Guo
- Optoelectronics Research Center, School of Science, Minzu University of China, 100081, Beijing, PR China
| | - Yanqi Ge
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics; International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen Institute of Translational Medicine, Department of Otolaryngology, Shenzhen Second People's Hospital, the First Affiliated Hospital, Institute of Microscale Optoelectronics, Shenzhen University, 518060, Shenzhen, China
| | - Shakeel Ahmed
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics; International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen Institute of Translational Medicine, Department of Otolaryngology, Shenzhen Second People's Hospital, the First Affiliated Hospital, Institute of Microscale Optoelectronics, Shenzhen University, 518060, Shenzhen, China
| | - Weichun Huang
- Nantong Key Lab of Intelligent and New Energy Materials, College of Chemistry and Chemical Engineering, Nantong University, 226019, Nantong, Jiangsu, China
| | - Huiling Liu
- Key Laboratory of Biomaterials of Guangdong Higher Education Institutes, Guangdong Provincial Engineering and Technological Research Centre for Drug Carrier Development, Department of Biomedical Engineering, Jinan University, 510632, Guangzhou, China
| | - Ling Qi
- Department of Core Medical Laboratory, the Sixth Affiliated Hospital of Guangzhou Medical University, Qingyuan People's Hospital, Qingyuan, Guang Dong Province, China
| | - Rui Guo
- Key Laboratory of Biomaterials of Guangdong Higher Education Institutes, Guangdong Provincial Engineering and Technological Research Centre for Drug Carrier Development, Department of Biomedical Engineering, Jinan University, 510632, Guangzhou, China
| | - Defa Li
- Department of Laboratory Medicine, Shenzhen Children's Hospital, Shenzhen, Guangdong, China.
| | - Paras N Prasad
- Institute for Lasers, Photonics, and Biophotonics and Department of Chemistry, University at Buffalo, State University of New York, Buffalo, NY, USA.
| | - Han Zhang
- Shenzhen Engineering Laboratory of phosphorene and Optoelectronics; International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen Institute of Translational Medicine, Department of Otolaryngology, Shenzhen Second People's Hospital, the First Affiliated Hospital, Institute of Microscale Optoelectronics, Shenzhen University, 518060, Shenzhen, China.
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25
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Zhu J, Jia Z, Tan X, Li Q, Ren D. Tunable electronic structures of covalent triazine frameworks/GaS van der Waals heterostructures via a perpendicular electric field and parallel strain. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.140069] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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26
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Dual sensing signal decoupling based on tellurium anisotropy for VR interaction and neuro-reflex system application. Nat Commun 2022; 13:5975. [PMID: 36216925 PMCID: PMC9550802 DOI: 10.1038/s41467-022-33716-9] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2022] [Accepted: 09/29/2022] [Indexed: 11/13/2022] Open
Abstract
Anisotropy control of the electronic structure in inorganic semiconductors is an important step in developing devices endowed with multi-function. Here, we demonstrate that the intrinsic anisotropy of tellurium nanowires can be used to modulate the electronic structure and piezoelectric polarization and decouple pressure and temperature difference signals, and realize VR interaction and neuro-reflex applications. The architecture design of the device combined with self-locking effect can eliminate dependence on displacement, enabling a single device to determine the hardness and thermal conductivity of materials through a simple touch. We used a bimodal Te-based sensor to develop a wearable glove for endowing real objects to the virtual world, which greatly improves VR somatosensory feedback. In addition, we successfully achieved stimulus recognition and neural-reflex in a rabbit sciatic nerve model by integrating the sensor signals using a deep learning technique. In view of in-/ex-vivo feasibility, the bimodal Te-based sensor would be considered a novel sensing platform for a wide range application of metaverse, AI robot, and electronic medicine. The accumulation of single-function sensors can increase the complexity of virtual reality systems. Here, Shen et al. exploit the intrinsic anisotropy of tellurium nanowires to design a multi-function pressure and temperature sensor, which can be used as tactile experience in the virtual world.
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27
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Yan Y, Xia K, Gan W, Yang K, Li G, Tang X, Li L, Zhang C, Fei GT, Li H. A tellurium short-wave infrared photodetector with fast response and high specific detectivity. NANOSCALE 2022; 14:13187-13191. [PMID: 36047440 DOI: 10.1039/d2nr02822k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) elementary tellurium (Te) has attracted intensive attention due to its potential applications in short-wave infrared photodetector devices. Here, we report hydrothermally synthesized 2D Te nanoflakes for short-wave infrared photodetectors with high performance. A Te-based photodetector exhibits a peak responsivity of 51.85 A W-1 at a 1550 nm wavelength, attributed to the efficient absorption of the phonons of 2D Te nanoflakes. Besides, the rising and decay time of the Te photodetector is calculated to be ∼19 μs and ∼21 μs, respectively, due to the rapid diffusion of charge carriers. In addition, Te-photodetectors exhibit a high specific detectivity (D*) of 1.88 × 1010 Jones and a superior external quantum efficiency (EQE) of 4148%. Our findings have demonstrated the development of high-performance short-wave infrared photodetectors with fast responses based on 2D Te nanoflakes.
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Affiliation(s)
- Yafei Yan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Kai Xia
- University of Science and Technology of China, Hefei 230026, P. R. China
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China.
| | - Wei Gan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Kemeng Yang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Gang Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Xi Tang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Liang Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China.
| | - Changjin Zhang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
- High Magnetic Field Laboratory of Anhui Province, Chinese Academy of Sciences, Hefei 230031, China
| | - Guang Tao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China.
| | - Hui Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
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28
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Unveiling Weyl-related optical responses in semiconducting tellurium by mid-infrared circular photogalvanic effect. Nat Commun 2022; 13:5425. [PMID: 36109522 PMCID: PMC9477843 DOI: 10.1038/s41467-022-33190-3] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/08/2022] [Accepted: 09/08/2022] [Indexed: 11/08/2022] Open
Abstract
AbstractElemental tellurium, conventionally recognized as a narrow bandgap semiconductor, has recently aroused research interests for exploiting Weyl physics. Chirality is a unique feature of Weyl cones and can support helicity-dependent photocurrent generation, known as circular photogalvanic effect. Here, we report circular photogalvanic effect with opposite signs at two different mid-infrared wavelengths which provides evidence of Weyl-related optical responses. These two different wavelengths correspond to two critical transitions relating to the bands of different Weyl cones and the sign of circular photogalvanic effect is determined by the chirality selection rules within certain Weyl cone and between two different Weyl cones. Further experimental evidences confirm the observed response is an intrinsic second-order process. With flexibly tunable bandgap and Fermi level, tellurium is established as an ideal semiconducting material to manipulate and explore chirality-related Weyl physics in both conduction and valence bands. These results are also directly applicable to helicity-sensitive optoelectronics devices.
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29
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Li T, Deng Y, Rong X, He C, Zhou M, Tang Y, Zhou H, Cheng C, Zhao C. Nanostructures and catalytic atoms engineering of tellurium‐based materials and their roles in electrochemical energy conversion. SMARTMAT 2022. [DOI: 10.1002/smm2.1142] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Affiliation(s)
- Tiantian Li
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
| | - Yuting Deng
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
| | - Xiao Rong
- Department of Nephrology, Department of Ultrasound, West China Hospital Sichuan University Chengdu China
| | - Chao He
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
- Department of Physics, Chemistry and Pharmacy, Danish Institute for Advanced Study (DIAS) University of Southern Denmark Odense Denmark
| | - Mi Zhou
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
| | - Yuanjiao Tang
- Department of Nephrology, Department of Ultrasound, West China Hospital Sichuan University Chengdu China
| | - Hongju Zhou
- Department of Nephrology, Department of Ultrasound, West China Hospital Sichuan University Chengdu China
| | - Chong Cheng
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
- Med‐X Center for Materials Sichuan University Chengdu China
| | - Changsheng Zhao
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering Sichuan University Chengdu China
- Med‐X Center for Materials Sichuan University Chengdu China
- College of Chemical Engineering Sichuan University Chengdu China
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30
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Evolution of the Electronic and Optical Properties of Meta-Stable Allotropic Forms of 2D Tellurium for Increasing Number of Layers. NANOMATERIALS 2022; 12:nano12142503. [PMID: 35889726 PMCID: PMC9324411 DOI: 10.3390/nano12142503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/24/2022] [Revised: 07/15/2022] [Accepted: 07/17/2022] [Indexed: 02/05/2023]
Abstract
In this work, ab initio Density Functional Theory calculations are performed to investigate the evolution of the electronic and optical properties of 2D Tellurium—called Tellurene—for three different allotropic forms (α-, β- and γ-phase), as a function of the number of layers. We estimate the exciton binding energies and radii of the studied systems, using a 2D analytical model. Our results point out that these quantities are strongly dependent on the allotropic form, as well as on the number of layers. Remarkably, we show that the adopted method is suitable for reliably predicting, also in the case of Tellurene, the exciton binding energy, without the need of computationally demanding calculations, possibly suggesting interesting insights into the features of the system. Finally, we inspect the nature of the mechanisms ruling the interaction of neighbouring Tellurium atoms helical chains (characteristic of the bulk and α-phase crystal structures). We show that the interaction between helical chains is strong and cannot be explained by solely considering the van der Waals interaction.
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31
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Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis. NANOMATERIALS 2022; 12:nano12132221. [PMID: 35808055 PMCID: PMC9268513 DOI: 10.3390/nano12132221] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 06/23/2022] [Accepted: 06/24/2022] [Indexed: 02/01/2023]
Abstract
Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of graphene-like 2D materials give them the potential to create completely new types of devices for functional electronics, nanophotonics, and quantum technologies. This paper considers epitaxially grown two-dimensional allotropic modifications of single elements: graphene (C) and its analogs (transgraphenes) borophene (B), aluminene (Al), gallenene (Ga), indiene (In), thallene (Tl), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosphorene (P), arsenene (As), antimonene (Sb), bismuthene (Bi), selenene (Se), and tellurene (Te). The emphasis is put on their structural parameters and technological modes in the method of molecular beam epitaxy, which ensure the production of high-quality defect-free single-element two-dimensional structures of a large area for promising device applications.
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Shi Z, Zhang H, Khan K, Cao R, Zhang Y, Ma C, Tareen AK, Jiang Y, Jin M, Zhang H. Two-dimensional materials toward Terahertz optoelectronic device applications. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C: PHOTOCHEMISTRY REVIEWS 2022. [DOI: 10.1016/j.jphotochemrev.2021.100473] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2023]
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Bhui A, Roychowdhury S, Sen A, Waghmare UV, Biswas K. Free‐Standing Few‐Layer Tellurene Nanosheets: Simple Solution‐Phase Synthesis and Electronic Structure. Z Anorg Allg Chem 2022. [DOI: 10.1002/zaac.202200097] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Animesh Bhui
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research INDIA
| | | | - Arpita Sen
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research INDIA
| | - Umesh V Waghmare
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research INDIA
| | - Kanishka Biswas
- Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) New Chemistry Unit INDIA
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 102] [Impact Index Per Article: 51.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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35
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Utilization of Solution Grown Manganese Oxide Nanocrystallite to Microstructure Against Bacteria’s Inhibition. J Inorg Organomet Polym Mater 2022. [DOI: 10.1007/s10904-021-02206-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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36
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Xie Z, Zhang B, Ge Y, Zhu Y, Nie G, Song Y, Lim CK, Zhang H, Prasad PN. Chemistry, Functionalization, and Applications of Recent Monoelemental Two-Dimensional Materials and Their Heterostructures. Chem Rev 2021; 122:1127-1207. [PMID: 34780169 DOI: 10.1021/acs.chemrev.1c00165] [Citation(s) in RCA: 43] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
The past decades have witnessed a rapid expansion in investigations of two-dimensional (2D) monoelemental materials (Xenes), which are promising materials in various fields, including applications in optoelectronic devices, biomedicine, catalysis, and energy storage. Apart from graphene and phosphorene, recently emerging 2D Xenes, specifically graphdiyne, borophene, arsenene, antimonene, bismuthene, and tellurene, have attracted considerable interest due to their unique optical, electrical, and catalytic properties, endowing them a broader range of intriguing applications. In this review, the structures and properties of these emerging Xenes are summarized based on theoretical and experimental results. The synthetic approaches for their fabrication, mainly bottom-up and top-down, are presented. Surface modification strategies are also shown. The wide applications of these emerging Xenes in nonlinear optical devices, optoelectronics, catalysis, biomedicine, and energy application are further discussed. Finally, this review concludes with an assessment of the current status, a description of existing scientific and application challenges, and a discussion of possible directions to advance this fertile field.
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Affiliation(s)
- Zhongjian Xie
- Institute of Pediatrics, Shenzhen Children's Hospital, Shenzhen 518038, Guangdong, P.R. China.,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - Bin Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - Yanqi Ge
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - Yao Zhu
- Shenzhen Medical Ultrasound Engineering Center, Department of Ultrasonography, Shenzhen People's Hospital, Second Clinical Medical College of Jinan University, First Clinical Medical College of Southern University of Science and Technology, Shenzhen 518020, China
| | - Guohui Nie
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - YuFeng Song
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - Chang-Keun Lim
- Department of Chemical and Materials Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Nur-Sultan City 010000, Kazakhstan
| | - Han Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - Paras N Prasad
- Institute for Lasers, Photonics, and Biophotonics and Department of Chemistry, University at Buffalo, State University of New York, Buffalo 14260-3000, United States
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37
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Hess P. Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table. NANOSCALE HORIZONS 2021; 6:856-892. [PMID: 34494064 DOI: 10.1039/d1nh00113b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This tutorial review describes the ongoing effort to convert main-group elements of the periodic table and their combinations into stable 2D materials, which is sometimes called modern 'alchemy'. Theory is successfully approaching this goal, whereas experimental verification is lagging far behind in the synergistic interplay between theory and experiment. The data collected here gives a clear picture of the bonding, structure, and mechanical performance of the main-group elements and their binary compounds. This ranges from group II elements, with two valence electrons, to group VI elements with six valence electrons, which form not only 1D structures but also, owing to their variable oxidation states, low-symmetry 2D networks. Outside of these main groups reviewed here, predominantly ionic bonding may be observed, for example in group II-VII compounds. Besides high-symmetry graphene with its shortest and strongest bonds and outstanding mechanical properties, low-symmetry 2D structures such as various borophene and tellurene phases with intriguing properties are receiving increasing attention. The comprehensive discussion of data also includes bonding and structure of few-layer assemblies, because the electronic properties, e.g., the band gap, of these heterostructures vary with interlayer layer separation and interaction energy. The available data allows the identification of general relationships between bonding, structure, and mechanical stability. This enables the extraction of periodic trends and fundamental rules governing the 2D world, which help to clear up deviating results and to estimate unknown properties. For example, the observed change of the bond length by a factor of two alters the cohesive energy by a factor of four and the extremely sensitive Young's modulus and ultimate strength by more than a factor of 60. Since the stiffness and strength decrease with increasing atom size on going down the columns of the periodic table, it is important to look for suitable allotropes of elements and binaries in the upper rows of the periodic table when mechanical stability and robustness are issues. On the other hand, the heavy compounds are of particular interest because of their low-symmetry structures with exotic electronic properties.
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Affiliation(s)
- Peter Hess
- Institute of Physical Chemistry, INF 253, University of Heidelberg, 69120 Heidelberg, Germany.
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38
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Huang H, Feng W, Chen Y. Two-dimensional biomaterials: material science, biological effect and biomedical engineering applications. Chem Soc Rev 2021; 50:11381-11485. [PMID: 34661206 DOI: 10.1039/d0cs01138j] [Citation(s) in RCA: 70] [Impact Index Per Article: 23.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
To date, nanotechnology has increasingly been identified as a promising and efficient means to address a number of challenges associated with public health. In the past decade, two-dimensional (2D) biomaterials, as a unique nanoplatform with planar topology, have attracted explosive interest in various fields such as biomedicine due to their unique morphology, physicochemical properties and biological effect. Motivated by the progress of graphene in biomedicine, dozens of types of ultrathin 2D biomaterials have found versatile bio-applications, including biosensing, biomedical imaging, delivery of therapeutic agents, cancer theranostics, tissue engineering, as well as others. The effective utilization of 2D biomaterials stems from the in-depth knowledge of structure-property-bioactivity-biosafety-application-performance relationships. A comprehensive summary of 2D biomaterials for biomedicine is still lacking. In this comprehensive review, we aim to concentrate on the state-of-the-art 2D biomaterials with a particular focus on their versatile biomedical applications. In particular, we discuss the design, fabrication and functionalization of 2D biomaterials used for diverse biomedical applications based on the up-to-date progress. Furthermore, the interactions between 2D biomaterials and biological systems on the spatial-temporal scale are highlighted, which will deepen the understanding of the underlying action mechanism of 2D biomaterials aiding their design with improved functionalities. Finally, taking the bench-to-bedside as a focus, we conclude this review by proposing the current crucial issues/challenges and presenting the future development directions to advance the clinical translation of these emerging 2D biomaterials.
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Affiliation(s)
- Hui Huang
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China. .,School of Environmental and Chemical Engineering, Shanghai University, Shanghai, 200444, P. R. China
| | - Wei Feng
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China.
| | - Yu Chen
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China. .,School of Environmental and Chemical Engineering, Shanghai University, Shanghai, 200444, P. R. China.,Wenzhou Institute of Shanghai University, Wenzhou, 325000, P. R. China.,School of Medicine, Shanghai University, Shanghai, 200444, P. R. China
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39
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Fan FR, Wang R, Zhang H, Wu W. Emerging beyond-graphene elemental 2D materials for energy and catalysis applications. Chem Soc Rev 2021; 50:10983-11031. [PMID: 34617521 DOI: 10.1039/c9cs00821g] [Citation(s) in RCA: 71] [Impact Index Per Article: 23.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Elemental two-dimensional (2D) materials have emerged as promising candidates for energy and catalysis applications due to their unique physical, chemical, and electronic properties. These materials are advantageous in offering massive surface-to-volume ratios, favorable transport properties, intriguing physicochemical properties, and confinement effects resulting from the 2D ultrathin structure. In this review, we focus on the recent advances in emerging energy and catalysis applications based on beyond-graphene elemental 2D materials. First, we briefly introduce the general classification, structure, and properties of elemental 2D materials and the new advances in material preparation. We then discuss various applications in energy harvesting and storage, including solar cells, piezoelectric and triboelectric nanogenerators, thermoelectric devices, batteries, and supercapacitors. We further discuss the explorations of beyond-graphene elemental 2D materials for electrocatalysis, photocatalysis, and heterogeneous catalysis. Finally, the challenges and perspectives for the future development of elemental 2D materials in energy and catalysis are discussed.
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Affiliation(s)
- Feng Ru Fan
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA. .,Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
| | - Ruoxing Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA. .,Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China. .,Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China.,Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA. .,Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA.,Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
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40
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Wang Y, Wang Y, Dong Y, Zhou L, Wei H, Long M, Xiao S, He J. The nonlinear optical transition bleaching in tellurene. NANOSCALE 2021; 13:15882-15890. [PMID: 34519753 DOI: 10.1039/d1nr03639d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
To date, outstanding linear and nonlinear optical properties of tellurene, caused by multiple two-dimensional (2D) phases and optical anisotropy, have attracted considerable interest for potential nanophotonics applications. In this work, the ultrafast nonlinear optical (NLO) properties of α-tellurene have been studied via Z-scan and pump-probe techniques at a broadband spectral region. Typical saturable absorption and band filling effects are observed in tellurene due to the Pauli exclusion principle. Analysis using density functional theory (DFT) computation shows the enhancements in NLO response within the ultraviolet-visible absorption spectral region are owing to the increased optical intraband transition in tellurene. Moreover, the effects of varying the photon energy of the probe pulse were explored. Our results indicated that probe pulses with higher photon energies can make smaller differential transmission signal, this effect is found to be negatively correlated with calculated joint density of states (JDOS). These results offer insights into the intrinsic photophysics of 2D tellurene, driving its applications in photonic and optoelectronic fields.
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Affiliation(s)
- Yiduo Wang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Yingwei Wang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Yulan Dong
- Key Laboratory of Hunan Province for Statistical Learning and Intelligent Computation, Mathematics and Statistics, Hunan University of Technology and Business, Changsha, Hunan 410205, China.
| | - Li Zhou
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Hao Wei
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Mengqiu Long
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Si Xiao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Jun He
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
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Khan K, Tareen AK, Iqbal M, Wang L, Ma C, Shi Z, Ye Z, Ahmad W, Rehman Sagar RU, Shams SS, Sophia PJ, Ullah Z, Xie Z, Guo Z, Zhang H. Navigating recent advances in monoelemental materials (Xenes)-fundamental to biomedical applications. PROG SOLID STATE CH 2021. [DOI: 10.1016/j.progsolidstchem.2021.100326] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
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42
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Zhao C, Batiz H, Yasar B, Kim H, Ji W, Scott MC, Chrzan DC, Javey A. Tellurium Single-Crystal Arrays by Low-Temperature Evaporation and Crystallization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100860. [PMID: 34331332 DOI: 10.1002/adma.202100860] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2021] [Revised: 06/02/2021] [Indexed: 06/13/2023]
Abstract
Thermally evaporated tellurium possesses an intriguing crystallization behavior, where an amorphous to crystalline phase transition happens at near-ambient temperature. However, a comprehensive understanding and delicate control of the crystallization process for the evaporated Te films is lacking. Here, the kinetics and dynamics of the crystallization of thermally evaporated Te films is visualized and modeled. Low-temperature processing of highly crystalline tellurium films with large grain size and preferred out-of-plane orientation ((100) plane parallel to the surface) is demonstrated by controlling the crystallization process. Tellurium single crystals with a lateral dimension of up to 6 µm are realized on various substrates including glass and plastic. Field-effect transistors based on 5 °C crystallized Te single grains (6-nm-thick) exhibit an average effective hole mobility of ≈100 cm2 V-1 s-1 , and on/off current ratio of ≈3 × 104 .
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Affiliation(s)
- Chunsong Zhao
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Humberto Batiz
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Bengisu Yasar
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Hyungjin Kim
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Wenbo Ji
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Mary C Scott
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Daryl C Chrzan
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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Selamneni V, Akshaya T, Adepu V, Sahatiya P. Laser-assisted micropyramid patterned PDMS encapsulation of 1D tellurium nanowires on cellulose paper for highly sensitive strain sensor and its photodetection studies. NANOTECHNOLOGY 2021; 32:455201. [PMID: 34340228 DOI: 10.1088/1361-6528/ac19d8] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2021] [Accepted: 08/02/2021] [Indexed: 06/13/2023]
Abstract
This work demonstrates the fabrication of tellurium-nanowires (Te-NWs)/paper based device encapsulated using laser assisted mircopyramid patterned polydimethylsiloxane (PDMS) films. Although there are multiple reports published on 1D Te, most of them are limited to establishing its properties and studying its behavior as a sensor and research on the utilization of Te-NWs for physical sensors remain unexplored. Further, reports on p-type photodetectors also remain scarce. The fabricated Te-NWs/paper with micropyramid structured PDMS films encapsulation was used as a strain sensor, and it exhibited considerable improvement (∼60%) in sensitivity compared to smooth PDMS films. The gauge factor of the developed strain sensor was found to be ∼15.3. In addition, fabricated Te-NWs/paper device with contacts was used as a photodetector and it showed photoresponsivity of ∼22.5 mA W-1and ∼14.5 mA W-1in visible and NIR regions, respectively. Furthermore, the device exhibited long-term mechanical stability under harsh deformations. Fabricated 1D Te-NWs/paper device was utilized as a strain sensor to monitor the angular movements in the human body and successfully monitored various human motions, including wrist bending, finger knuckle, elbow joint, and knee joint. The successful demonstration of Te-NWs based physical sensors and utilization in broadband photodetectors opens avenues of research for tellurium based flexible and wearable devices.
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Affiliation(s)
- Venkatarao Selamneni
- Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani, Hyderabad Campus, Hyderabad, 500078, India
| | - T Akshaya
- Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani, Hyderabad Campus, Hyderabad, 500078, India
| | - Vivek Adepu
- Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani, Hyderabad Campus, Hyderabad, 500078, India
| | - Parikshit Sahatiya
- Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani, Hyderabad Campus, Hyderabad, 500078, India
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Yao J, Chen F, Li J, Du J, Wu D, Tian Y, Zhang C, Li X, Lin P. Mixed-dimensional Te/CdS van der Waals heterojunction for self-powered broadband photodetector. NANOTECHNOLOGY 2021; 32:415201. [PMID: 34214994 DOI: 10.1088/1361-6528/ac10e6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2021] [Accepted: 07/02/2021] [Indexed: 06/13/2023]
Abstract
The 2D layered crystals can physically integrate with other non-2D components through van der Waals (vdW) interaction, forming mixed-dimensional heterostructures. As a new elemental 2D material, tellurium (Te) has attracted intense recent interest for high room-temperature mobility, excellent air-stability, and the easiness of scalable synthesis. To date, the Te is still in its research infancy, and optoelectronics with low-power consumption are less reported. Motivated by this, we report the fabrication of a mixed-dimensional vdW photodiode using 2D Te and 1D CdS nanobelt in this study. The heterojunction exhibits excellent self-powered photosensing performance and a broad response spectrum up to short-wave infrared. Under 520 nm wavelength, a high responsivity of 98 mA W-1is obtained at zero bias with an external quantum efficiency of 23%. Accordingly, the photo-to-dark current ratio and specific detectivity reach 9.2 × 103and 1.9 × 1011Jones due to the suppressed dark current. This study demonstrates the promising applications of Te/CdS vdW heterostructure in high-performance photodetectors. Besides, such a mixed-dimensional integration strategy paves a new way for device design, thus expanding the research scope for 2D Te-based optoelectronics.
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Affiliation(s)
- Jinrong Yao
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Fangfang Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Juanjuan Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Junli Du
- State Grid Henan Electric Power Research Institute, Zhengzhou 450052, People's Republic of China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Yongtao Tian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Cheng Zhang
- National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, People's Republic of China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
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Nagarajan V, Chandiramouli R. Interaction studies of glycine, acetate and methylamine on β-tellurene nanoribbon – A first-principles analysis. J Mol Graph Model 2021; 105:107895. [DOI: 10.1016/j.jmgm.2021.107895] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2021] [Revised: 03/01/2021] [Accepted: 03/02/2021] [Indexed: 02/02/2023]
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Ling X, Jin Z, Jiang Q, Wang X, Wei B, Wang Z, Xu Y, Cao T, Engle JW, Cai W, Su C, He Q. Engineering biocompatible TeSe x nano-alloys as a versatile theranostic nanoplatform. Natl Sci Rev 2021; 8:nwaa156. [PMID: 34262791 PMCID: PMC8274553 DOI: 10.1093/nsr/nwaa156] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2020] [Revised: 06/09/2020] [Accepted: 06/20/2020] [Indexed: 12/17/2022] Open
Abstract
Photothermal nanotheranostics, especially in the near infrared II (NIR-II) region, exhibits a great potential in precision and personalized medicine, owing to high tissue penetration of NIR-II light. The NIR-II-photothermal nanoplatforms with high biocompatibility as well as high photothermal effect are urgently needed but rarely reported so far. Te nanomaterials possess high absorbance to NIR-II light but also exhibit high cytotoxicity, impeding their biomedical applications. In this work, the controllable incorporation of biocompatible Se into the lattice of Te nanostructures is proposed to intrinsically tune their inherent cytotoxicity and enhance their biocompatibility, developing TeSex nano-alloys as a new kind of theranostic nanoplatforms. We have uncovered that the cytotoxicity of Te nanomaterials primarily derives from irreversible oxidation stress and intracellular imbalance of organization and energy, and can be eliminated by incorporating a moderate proportion of Se (x=0.43). We have also discovered that the as-prepared TeSex nano-alloys have extraordinarily high NIR-II-photothermal conversion efficiency (77.2%), 64Cu coordination and computed tomography (CT) contrast capabilities, enabling high-efficacy multimodal photothermal/photoacoustic/positron emission tomography (PET)/CT imaging-guided NIR-II-photothermal therapy of cancer. The proposed nano-alloying strategy provides a new route to improve the biocompatibility of biomedical nanoplatforms and endow them with versatile theranostic functions.
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Affiliation(s)
- Xiang Ling
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Zhaokui Jin
- Guangdong Provincial Key Laboratory of Biomedical Measurements and Ultrasound Imaging, National-Regional Key Technology Engineering Laboratory for Medical Ultrasound, School of Biomedical Engineering, Health Science Center, Shenzhen University, Shenzhen 518060, China
| | - Qi Jiang
- Guangdong Provincial Key Laboratory of Biomedical Measurements and Ultrasound Imaging, National-Regional Key Technology Engineering Laboratory for Medical Ultrasound, School of Biomedical Engineering, Health Science Center, Shenzhen University, Shenzhen 518060, China
| | - Xiaotao Wang
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Bin Wei
- Department of Quantum and Energy Materials, International Iberian Nanotechnology Laboratory (INL), Braga 4715-330, Portugal
| | - Zhongchang Wang
- Department of Quantum and Energy Materials, International Iberian Nanotechnology Laboratory (INL), Braga 4715-330, Portugal
| | - Yangsen Xu
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Tianye Cao
- Guangdong Provincial Key Laboratory of Biomedical Measurements and Ultrasound Imaging, National-Regional Key Technology Engineering Laboratory for Medical Ultrasound, School of Biomedical Engineering, Health Science Center, Shenzhen University, Shenzhen 518060, China
- Departments of Radiology and Medical Physics, University of Wisconsin-Madison, Madison, WI 53705, USA
| | - Jonathan W Engle
- Departments of Radiology and Medical Physics, University of Wisconsin-Madison, Madison, WI 53705, USA
| | - Weibo Cai
- Departments of Radiology and Medical Physics, University of Wisconsin-Madison, Madison, WI 53705, USA
| | - Chenliang Su
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Qianjun He
- Guangdong Provincial Key Laboratory of Biomedical Measurements and Ultrasound Imaging, National-Regional Key Technology Engineering Laboratory for Medical Ultrasound, School of Biomedical Engineering, Health Science Center, Shenzhen University, Shenzhen 518060, China
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Sachdeva PK, Gupta S, Bera C. Large piezoelectric and thermal expansion coefficients with negative Poisson's ratio in strain-modulated tellurene. NANOSCALE ADVANCES 2021; 3:3279-3287. [PMID: 36133659 PMCID: PMC9418014 DOI: 10.1039/d0na00930j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2020] [Accepted: 04/06/2021] [Indexed: 05/17/2023]
Abstract
Two dimensional (2D) chalcogenide monolayers have diversified applications in optoelectronics, piezotronics, sensors and energy harvesting. The group-IV tellurene monolayer is one such emerging material in the 2D family owing to its piezoelectric, thermoelectric and optoelectronic properties. In this paper, the mechanical and piezoelectric properties of 2D tellurene in centrosymmetric β and non-centrosymmetric β' phases are investigated using density functional theory. β'-Te has shown a negative Poisson's ratio of -0.024 along the zigzag direction. Giant in-plane piezoelectric coefficients of -83.89 × 10-10 C m-1 and -42.58 × 10-10 C m-1 are observed for β'-Te under biaxial and uniaxial strains, respectively. The predicted values are remarkably higher, that is 23 and 12 times the piezoelectric coefficient of a MoS2 monolayer with biaxial and uniaxial strain in the zigzag direction, respectively. A large thermal expansion coefficient of tellurene is also estimated using quasi harmonic approximation. High piezoelectricity combined with exotic mechanical and thermal properties makes tellurene a very promising candidate in nanoelectronics.
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Affiliation(s)
- Parrydeep Kaur Sachdeva
- Institute of Nano Science and Technology Knowledge City, Sector-81, S. A. S Nagar Mohali Punjab 140306 India
- University Institute of Engineering and Technology, Panjab University Sector-25 Chandigarh 160014 India
- Department of Physics, Panjab University Sector-14 Chandigarh 160014 India
| | - Shuchi Gupta
- University Institute of Engineering and Technology, Panjab University Sector-25 Chandigarh 160014 India
| | - Chandan Bera
- Institute of Nano Science and Technology Knowledge City, Sector-81, S. A. S Nagar Mohali Punjab 140306 India
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Han L, Yang M, Wen P, Gao W, Huo N, Li J. A high performance self-powered photodetector based on a 1D Te-2D WS 2 mixed-dimensional heterostructure. NANOSCALE ADVANCES 2021; 3:2657-2665. [PMID: 36134149 PMCID: PMC9419060 DOI: 10.1039/d1na00073j] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Accepted: 03/14/2021] [Indexed: 05/21/2023]
Abstract
One-dimensional (1D)-two-dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of an atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. Herein, a mixed-dimensional vertical heterostructure is constructed by transferring mechanically exfoliated 2D WS2 nanosheets on epitaxially grown 1D tellurium (Te) microwires. According to the theoretical type-II band alignment, the device exhibits a photovoltaic effect and serves as an excellent self-powered photodetector with a maximum open-circuit voltage (V oc) up to ∼0.2 V. Upon 635 nm light illumination, the photoresponsivity, external quantum efficiency and detectivity of the self-powered photodetector (SPPD) are calculated to be 471 mA W-1, 91% and 1.24 × 1012 Jones, respectively. Moreover, the dark current of the SPPD is highly suppressed to the sub-pA level due to the large lateral built-in electric field, which leads to a high I light/I dark ratio of 104 with a rise time of 25 ms and decay time of 14.7 ms. The abovementioned properties can be further enhanced under a negative bias of -2 V. In brief, the 1D Te-2D WS2 mixed-dimensional heterostructures have great application potential in high performance photodetectors and photovoltaics.
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Affiliation(s)
- Lixiang Han
- School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Mengmeng Yang
- School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Peiting Wen
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Nengjie Huo
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
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Zheng W, Li Y, Liu M, Lee LYS. Few-Layer Tellurium: Cathodic Exfoliation and Doping for Collaborative Hydrogen Evolution. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2007768. [PMID: 33738956 DOI: 10.1002/smll.202007768] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2020] [Revised: 02/05/2021] [Indexed: 06/12/2023]
Abstract
2D tellurium is a suitable electrocatalyst support that can assist electron transport while hosting active sites, yet its production remains challenging. Herein, a cathodic exfoliation method that can exfoliate Te crystal directly to Te nanosheets at low potential, also enabling simultaneous transition metal doping on Te nanosheet surface is presented. In situ Raman spectra and ex situ characterizations reveal that the cathodic exfoliation relies on the electrostatic repulsion between Te flakes covered with in situ generated ditelluride (Te2 2- ) anions. The Te2 2- anions can anchor metal ions to the surface, and the doping concentration can be tuned by adjusting the concentration of metal ion in the electrolyte. The metal-doped Te nanosheets exhibit highly improved hydrogen evolution activities. In particular, Pt-doped Te outperforms polycrystalline Pt at high overpotential. A collaborative hydrogen production mechanism via Volmer-Heyrovsky pathway is suggested: Te2 2- adsorbs protons and assists the mass transfer to adjacent Pt atoms where the protons are reduced and released as hydrogen.
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Affiliation(s)
- Weiran Zheng
- Department of Applied Biology and Chemical Technology and the State Key Laboratory of Chemical Biology and Drug Discovery, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
| | - Yong Li
- Department of Applied Biology and Chemical Technology and the State Key Laboratory of Chemical Biology and Drug Discovery, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
| | - Mengjie Liu
- Department of Applied Biology and Chemical Technology and the State Key Laboratory of Chemical Biology and Drug Discovery, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
| | - Lawrence Yoon Suk Lee
- Department of Applied Biology and Chemical Technology and the State Key Laboratory of Chemical Biology and Drug Discovery, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
- Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
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Wang Y, Liu S, Li Q, Quhe R, Yang C, Guo Y, Zhang X, Pan Y, Li J, Zhang H, Xu L, Shi B, Tang H, Li Y, Yang J, Zhang Z, Xiao L, Pan F, Lu J. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:056501. [PMID: 33761489 DOI: 10.1088/1361-6633/abf1d4] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Accepted: 03/24/2021] [Indexed: 06/12/2023]
Abstract
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal properties, which hold potential in electronic, optoelectronic, thermoelectric applications, and so forth. The field-effect transistor (FET), a semiconductor gated with at least three terminals, is pervasively exploited as the device geometry for these applications. For lack of effective and stable substitutional doping techniques, direct metal contact is often used in 2DSC FETs to inject carriers. A Schottky barrier (SB) generally exists in the metal-2DSC junction, which significantly affects and even dominates the performance of most 2DSC FETs. Therefore, low SB or Ohmic contact is highly preferred for approaching the intrinsic characteristics of the 2DSC channel. In this review, we systematically introduce the recent progress made in theoretical prediction of the SB height (SBH) in the 2DSC FETs and the efforts made both in theory and experiments to achieve low SB contacts. From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET. Finally, we conclude this review from the viewpoints of state-of-the-art electrode designs for 2DSC FETs.
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Affiliation(s)
- Yangyang Wang
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Shiqi Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Qiuhui Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Chen Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Guo
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, People's Republic of China
| | - Xiuying Zhang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yuanyuan Pan
- State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemical Engineering, China University of Petroleum (East China), Qingdao, 266580, People's Republic of China
| | - Jingzhen Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Han Zhang
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Bowen Shi
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Hao Tang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Lin Xiao
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Feng Pan
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, People's Republic of China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
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