Strain engineering in semiconducting two-dimensional crystals

Improved Strain Transfer Efficiency in Large-Area Two-Dimensional MoS2 Obtained by Gold-Assisted Exfoliation

Strain engineering represents a pivotal approach to tailoring the optoelectronic properties of two-dimensional (2D) materials. However, typical bending experiments often encounter challenges, such as layer slippage and inefficient transfer of strain from the substrate to the 2D material, hindering the realization of their full potential. In our study, using molybdenum disulfide (MoS2) as a model 2D material, we have demonstrated that layers obtained through gold-assisted exfoliation on flexible polycarbonate substrates can achieve high-efficient strain transfer while also mitigating slippage effects, owing to the strong interfacial interaction established between MoS2 and gold. We employ differential reflectance and Raman spectroscopy for monitoring strain changes. We successfully applied uniaxial strains of up to 3% to trilayer MoS2, resulting in a notable energy shift of 168 meV. These values are comparable only to those obtained in encapsulated samples with organic polymers.

Compact computer controlled biaxial tensile device for low-temperature transport measurements of layered materials

A biaxial tensile device for the transport study of layered materials is described. The device is mounted on the standard 24 pin zero force connector and can be moved between various setups. The compact design of the device makes it suitable for a wide range of studies. In our case, it is placed inside a 50 mm diameter chamber in the cryocooler and is used in the temperature range 9-310 K. A sample is glued in the center of a polyimide cruciform substrate, the ends of which are connected to a tension system driven by four computer-controlled stepper motors providing tensile force up to 30 N. Computer simulation results and their experimental verification show that tensile strain along one axis depends on the tensile load along the perpendicular direction, and this dependence turns out to be relatively strong and exceeds 40%. The operation of the device is demonstrated by studying the effect of deformation on the electrical conductivity of the layered compound 2H-NbS2.

Strain in Hybrid Organic-Inorganic Metal Halide Perovskites Microstructures by Numerical Simulations

Hybrid organic-inorganic metal halide perovskites (HOIPs) are promising materials for optoelectronics applications. Their optical and electrical properties can be controlled by strain engineering, that results from application of local elastic deformation or deposition on pre-patterned substrates acquiring a conformal 3D shape. Most interesting, their mechanical properties depend on their crystal structure, composition and dimensionality. We explore by numerical simulations the deformation of a selection of HOIPs comprising a broad range of elastic properties. We consider an axial symmetry with the formation of microdomes on flakes. Radial and vertical forces are considered, finding that the radial force is more effective to obtain large deformation. Large vertical displacement and strain is obtained for HOIPs with low stiffness. The layered nature of HOIPs, that are formed by inorganic layers of different thickness and organic spacers, is also investigated, revealing a non-monotonous trend with the proportion of inorganic to organic part.

Two-Dimensional Materials for Highly Efficient and Stable Perovskite Solar Cells

Perovskite solar cells (PSCs) offer low costs and high power conversion efficiency. However, the lack of long-term stability, primarily stemming from the interfacial defects and the susceptible metal electrodes, hinders their practical application. In the past few years, two-dimensional (2D) materials (e.g., graphene and its derivatives, transitional metal dichalcogenides, MXenes, and black phosphorus) have been identified as a promising solution to solving these problems because of their dangling bond-free surfaces, layer-dependent electronic band structures, tunable functional groups, and inherent compactness. Here, recent progress of 2D material toward efficient and stable PSCs is summarized, including its role as both interface materials and electrodes. We discuss their beneficial effects on perovskite growth, energy level alignment, defect passivation, as well as blocking external stimulus. In particular, the unique properties of 2D materials to form van der Waals heterojunction at the bottom interface are emphasized. Finally, perspectives on the further development of PSCs using 2D materials are provided, such as designing high-quality van der Waals heterojunction, enhancing the uniformity and coverage of 2D nanosheets, and developing new 2D materials-based electrodes.

Two-Step Conversion of Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides and Heterostructures

The widely studied class of two-dimensional (2D) materials known as transition metal dichalcogenides (TMDs) are now well-poised to be employed in real-world applications ranging from electronic logic and memory devices to gas and biological sensors. Several scalable thin film synthesis techniques have demonstrated nanoscale control of TMD material thickness, morphology, structure, and chemistry and correlated these properties with high-performing, application-specific device metrics. In this review, the particularly versatile two-step conversion (2SC) method of TMD film synthesis is highlighted. The 2SC technique relies on deposition of a solid metal or metal oxide precursor material, followed by a reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline TMD. Herein, the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high-quality 2D TMD synthesis are considered. The specific advantages of the 2SC approach including deposition on diverse substrates, low-temperature processing, orientation control, and heterostructure synthesis, among others, are featured. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next-generation electronics, sensing, and optoelectronic devices, as well as catalysis for energy-related applications.

Pump-Driven Opto-Magnetic Properties in Semiconducting Transition-Metal Dichalcogenides: An Analytical Model

Single-layer transition-metal dichalcogenides provide an unique intrinsic entanglement between the spin/valley/orbital degrees of freedom and the polarization of scattered photons. This scenario gives rise to the well-assessed optical dichroism observed by using both steady and time-resolved probes. In this paper, we provide compact analytical modeling of the onset of a finite Faraday/Kerr optical rotation upon shining with circularly polarized light. We identify different optical features displaying optical rotation at different characteristic energies, and we describe in an analytical framework the time-dependence of their intensities as a consequence of the main spin-conserving and spin-flip processes.

Mixed-Dimensional van der Waals Heterostructure (2D ReS2/0D MoS2 Quantum Dots)-Based Broad Spectral Range with Ultrahigh-Responsive Photodetector

The remarkable properties of two-dimensional (2D) materials have led to significant advancements in photodetection and optoelectronics research. Currently, there are many successful methods that are employed to improve the responsivity of photodetectors, but the limited spectral range of the device remains a limitation. This work demonstrates the development of a mixed-dimensional (2D/0D) hybrid photodetector device fabricated using chemical vapor deposition (CVD)-grown monolayer ReS2 and solution-processed MoS2 quantum dots (QDs). The mixed dimensionality of 2D (ReS2) and zero-dimensional (0D) MoS2 QDs assist in improving the spectral range of the device [ultraviolet (360 nm) to near-infrared (780 nm)]. Further, due to the work function difference between ReS2 and MoS2 QDs, the built-in electric field across the mixed-dimensional interface promotes effective charge separation and migration, resulting in improved responsivities of the device. The calculated responsivities of the fabricated photodetector are 5.4 × 102, 3.3 × 102, and 2.6 × 102 A/W when subjected to visible, UV, and NIR light illumination, which is remarkable when compared to the existing reports on broadband photodetection. The mixed-dimensionality heterostructure coupled with contact engineering paves the way for highly responsive broadband photodetectors for potential applications in security, healthcare, etc.

Lateral junctions of transition metal dichalcogenides as ballistic channels for straintronic applications

In the context of advanced nanoelectronics, two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are gaining considerable interest due to their ultimate thinness, clean surface and high carrier mobility. The engineering prospects offered by those materials are further enlarged by the recent realization of atomically sharp TMD-based lateral junctions, whose electronic properties are governed by strain effects arising from the constituents lattice mismatch. Although most theoretical studies considered only misfit strain, first-principles simulations are employed here to investigate the transport properties under external deformation of a three-terminal device constructed from a MoS2/WSe2/MoS2junction. Large modulation of the current is reported owing to the change in band offset, illustrating the importance of strain on the p-n junction characteristics. The device operation is demonstrated for both local and global deformations, even for ultra-short channels, suggesting potential applications for ultra-thin body straintronics.

Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy

We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain. Here, we take advantage of the RF excitation to distinguish the intrinsic quantum capacitance of the strained ML from that due to atomic scale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. In fact, at frequencies fRF larger than the inverse defect trapping time, the defect contribution to the total capacitance and to transport is negligible. Using RF-EFM at fRF = 300 MHz, we visualize simultaneously the bubble topography and its quantum capacitance. Our finite-frequency capacitance imaging technique is noninvasive and nanoscale and can contribute to the investigation of time- and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods.

Multipiezo Effect in Altermagnetic V2SeTeO Monolayer

Strain engineering has been used as an efficient method to modulate various properties of quantum materials and electronic devices. One may establish piezo effects based on a disciplined response to the strain in multifunctional nanosystems. Inspired by a recent theoretical proposal on the interesting piezomagnetism and C-paired valley polarization in the V2Se2O monolayer, we predict a stable altermagnetic Janus monolayer V2SeTeO using density functional theory calculations. It exhibits a novel "multipiezo" effect combining piezoelectricity, piezovalley, and piezomagnetism. Most interestingly, the valley polarization and the net magnetization under strain in V2SeTeO exceed these in V2Se2O, along with the additional large piezoelectric coefficient. The "multipiezo" effect makes Janus monolayer V2SeTeO as a tantalizing material for potential applications in nanoelectronics, optoelectronics, spintronics, and valleytronics.

Direct Imaging of Carrier Funneling in a Dielectric Engineered 2D Semiconductor

In atomically thin transition-metal dichalcogenides (TMDCs), the environmental sensitivity of the strong Coulomb interaction offers promising approaches to create spatially varying potential landscapes in the same continuous material by tuning its dielectric environment. Thus, allowing for control of transport. However, a scalable and CMOS-compatible method for achieving this is required to harness these effects in practical applications. In addition, because of their ultrashort lifetime, observing the spatiotemporal dynamics of carriers in monolayer TMDCs, on the relevant time scale, is challenging. Here, we pattern and deposit a thin film of hafnium oxide (HfO2) via atomic layer deposition (ALD) on top of a monolayer of WSe2. This allows for the engineering of the dielectric environment of the monolayer and design of heterostructures with nanoscale spatial resolution via a highly scalable postsynthesis methodology. We then directly image the transport of photoexcitations in the monolayer with 50 fs time resolution and few-nanometer spatial precision, using a pump probe microscopy technique. We observe the unidirectional funneling of charge carriers, from the unpatterned to the patterned areas, over more than 50 nm in the first 20 ps with velocities of over 2 × 103 m/s at room temperature. These results demonstrate the possibilities offered by dielectric engineering via ALD patterning, allowing for arbitrary spatial patterns that define the potential landscape and allow for control of the transport of excitations in atomically thin materials. This work also shows the power of the transient absorption methodology to image the motion of photoexcited states in complex potential landscapes on ultrafast time scales.

Optical transparency in 2D ferromagnetic WSe2/1T-VSe2/WSe2multilayer with strain induced large anomalous Nernst conductivity

Transparent two-dimensional (2D) magnetic materials may bring intriguing features and are indispensable for transparent electronics. However, it is rare to find both optical transparency and room-temperature ferromagnetism simultaneously in a single 2D material. Herein, we explore the possibility of both these features in 2D WSe2/1T-VSe2(1ML)/WSe2and WSe2/1T-VSe2(2ML)/WSe2heterostructures by taking one monolayer (1ML) and two monolayers (2ML) of 1T-VSe2using first-principles calculations. Further, we investigate anomalous Hall conductivity (AHC) and anomalous Nernst conductivity (ANC) using a maximally localized Wannier function. The WSe2/1T-VSe2(1ML)/WSe2and WSe2/1T-VSe2(2ML)/WSe2systems show Curie temperatures of 328 and 405 K. Under biaxial compressive strain, the magnetic anisotropy of both systems is switched from in-plane to out-of-plane. We find a large AHC of 1.51 e2/h and 3.10 e2/h in the electron-doped region for strained WSe2/1T-VSe2(1ML)/WSe2and WSe2/1T-VSe2(2ML)/WSe2systems. Furthermore, we obtain a giant ANC of 3.94 AK-1m-1in a hole-doped strained WSe2/1T-VSe2(2ML)/WSe2system at 100 K. Both WSe2/1T-VSe2(1ML)/WSe2and WSe2/1T-VSe2(2ML)/WSe2are optically transparent in the visible ranges with large refractive indices of 3.2-3.4. Our results may suggest that the WSe2/1T-VSe2/WSe2structure possesses multifunctional physical properties and these features can be utilized for spintronics and optoelectronics device applications such as magnetic sensors, memory devices, and transparent magneto-optic devices at room temperature.

Large Biaxial Compressive Strain Tuning of Neutral and Charged Excitons in Single-Layer Transition Metal Dichalcogenides

The absorption and emission of light in single-layer transition metal dichalcogenides are governed by the formation of excitonic quasiparticles. Strain provides a powerful technique to tune the optoelectronic properties of two-dimensional materials and thus to adjust their exciton energies. The effects of large compressive strain in the optical spectrum of two-dimensional (2D) semiconductors remain rather unexplored compared to those of tensile strain, mainly due to experimental constraints. Here, we induced large, uniform, biaxial compressive strain (∼1.2%) by cooling, down to 10 K, single-layer WS2, MoS2, WSe2, and MoSe2 deposited on polycarbonate substrates. We observed a significant strain-induced modulation of neutral exciton energies, with blue shifts up to 160 meV, larger than in any previous experiments. Our results indicate a remarkably efficient transfer of compressive strain, demonstrated by gauge factor values exceeding previous results and approaching theoretical expectations. At low temperatures, we investigated the effect of compressive strain on the resonances associated with the formation of charged excitons. In WS2, a notable reduction of gauge factors for charged compared to neutral excitons suggests an increase in their binding energy, which likely results from the effects of strain added to the influence of the polymeric substrate.

Tensile Strain-Dependent Ultrafast Electron Transfer and Relaxation Dynamics in Flexible WSe2/MoS2 Heterostructures

Understanding and controlling carrier dynamics in two-dimensional (2D) van der Waals heterostructures through strain are crucial for their flexible applications. Here, femtosecond transient absorption spectroscopy is employed to elucidate the interlayer electron transfer and relaxation dynamics under external tensile strains in a WSe2/MoS2 heterostructure. The results show that a modest ∼1% tensile strain can significantly alter the lifetimes of electron transfer and nonradiative electron-hole recombination by >30%. Ab initio non-adiabatic molecular dynamics simulations suggest that tensile strain weakens the electron-phonon coupling, thereby suppressing the transfer and recombination dynamics. Theoretical predictions indicate that strain-induced energy difference increases along the electron transfer path could contribute to the prolongation of the transfer lifetime. A subpicosecond decay process, related to hot-electron cooling, remains almost unaffected by strain. This study demonstrates the potential of tuning interlayer carrier dynamics through external strains, offering insights into flexible optoelectronic device design with 2D materials.

Exciton-Phonon Interactions in Strained Domes of Monolayer MoS2 Studied by Resonance Raman Spectroscopy

This work describes a resonance Raman study performed in the domes of monolayer MoS2 using 23 different laser excitation energies covering the visible and near-infrared (NIR) ranges. The multiple excitation results allowed us to investigate the exciton-phonon interactions of different phonons (A'1, E', and LA) with different excitonic optical transitions in biaxially strained monolayer MoS2. The analysis of the intensities of the two first-order peaks, A'1 and E', and the double-resonance 2LA Raman band as a function of the laser excitation furnished the values of the energies of the indirect exciton and the direct excitonic transitions in the strained MoS2 domes. It was noticed that the out-of-plane A'1 phonon mode is significantly enhanced only by the indirect exciton I and the C exciton, whereas the in-plane E' mode is only enhanced by the C exciton of the MoS2 dome, thus revealing the weak interaction of these phonons with the A and B excitons in the strained MoS2 domes. On the other hand, the 2LA Raman band is significantly enhanced at the indirect exciton I and by the A (or B) exciton but not enhanced by the C exciton, thus showing that the LA edge phonons that participate in the double-resonance process in MoS2 have a weak interaction with the C exciton.

Latest Innovations in 2D Flexible Nanoelectronics

2D materials with dangling-bond-free surfaces and atomically thin layers have been shown to be capable of being incorporated into flexible electronic devices. The electronic and optical properties of 2D materials can be tuned or controlled in other ways by using the intriguing strain engineering method. The latest and encouraging techniques in regard to creating flexible 2D nanoelectronics are condensed in this review. These techniques have the potential to be used in a wider range of applications in the near and long term. It is possible to use ultrathin 2D materials (graphene, BP, WTe2 , VSe2 etc.) and 2D transition metal dichalcogenides (2D TMDs) in order to enable the electrical behavior of the devices to be studied. A category of materials is produced on smaller scales by exfoliating bulk materials, whereas chemical vapor deposition (CVD) and epitaxial growth are employed on larger scales. This overview highlights two distinct requirements, which include from a single semiconductor or with van der Waals heterostructures of various nanomaterials. They include where strain must be avoided and where it is required, such as solutions to produce strain-insensitive devices, and such as pressure-sensitive outcomes, respectively. Finally, points-of-view about the current difficulties and possibilities in regard to using 2D materials in flexible electronics are provided.

Ultrafast Electronic Relaxation Dynamics of Atomically Thin MoS2 Is Accelerated by Wrinkling

Strain engineering is an attractive approach for tuning the local optoelectronic properties of transition metal dichalcogenides (TMDs). While strain has been shown to affect the nanosecond carrier recombination dynamics of TMDs, its influence on the sub-picosecond electronic relaxation dynamics is still unexplored. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and nonadiabatic ab initio molecular dynamics (NAMD) to investigate the ultrafast dynamics of wrinkled multilayer (ML) MoS2 comprising 17 layers. Following 2.41 eV photoexcitation, electronic relaxation at the Γ valley occurs with a time constant of 97 ± 2 fs for wrinkled ML-MoS2 and 120 ± 2 fs for flat ML-MoS2. NAMD shows that wrinkling permits larger amplitude motions of MoS2 layers, relaxes electron-phonon coupling selection rules, perturbs chemical bonding, and increases the electronic density of states. As a result, the nonadiabatic coupling grows and electronic relaxation becomes faster compared to flat ML-MoS2. Our study suggests that the sub-picosecond electronic relaxation dynamics of TMDs is amenable to strain engineering and that applications which require long-lived hot carriers, such as hot-electron-driven light harvesting and photocatalysis, should employ wrinkle-free TMDs.

Programming twist angle and strain profiles in 2D materials

Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions caused by random strain. We manipulated the moiré patterns in hetero- and homobilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moiré patterns with tunable wavelength and ultralow disorder. Our results may enable detailed studies of ultralow-disorder moiré systems and the realization of precise strain-engineered devices.

High optical spin-filtering in antiferromagnetic stanene nanoribbons induced by band bending and uniaxial strain

Non-equilibrium spin-polarized transport properties of antiferromagnetic stanene nanoribbons are theoretically studied under the combining effect of a normal electric field and linearly polarized irradiation based on the tight-binding model at room temperature. Due to the existence of spin-orbit coupling in stanene lattice, applying normal electric field leads to splitting of band degeneracy of spin-resolved energy levels in conduction and valence bands. Furthermore, unequivalent absorption of the polarized photons at two valleys which is attributed to an antiferromagnetic exchange field results in unequal spin-polarized photocurrent for spin-up and spin-down components. Interestingly, in the presence of band bending which has been induced by edge potentials, an allowable quantum efficiency occurs over a wider wavelength region of the incident light. It is especially important that the variation of an exchange magnetic field generates spin semi-conducting behavior in the bended band structure. Moreover, it is shown that optical spin-filtering effect is obtained under the simultaneous effect of uniaxial strain and narrow edge potential.

The Progress on Magnetic Material Thin Films Prepared Using Polymer-Assisted Deposition

Polymer-assisted deposition (PAD) has been widely used in the preparation of high-quality oxides and sulfides for basic research and applications. Specifically, diverse PAD-prepared magnetic material thin films such as ZnO, Ga₂O₃, SrRuO₃, LaCoO₃, LaMnO₃, Y₃Fe₅O₁₂, MoS₂, MoSe₂, and ReS₂ thin films have been grown, in which thickness-dependent, strain-modulated, doping-mediated, and/or morphology-dependent room-temperature ferromagnetism (RTFM) have been explored. Inspired by the discovery of intrinsic low-temperature FM in two-dimensional (2D) systems prepared using mechanical exfoliation, the search for more convenient methods to prepare 2D ferromagnetic materials with high-temperature FM has seen explosive growth, but with little success. Fortunately, the very recent synthesis of 2D NiO by PAD has shed light on this challenge. Based on these abovementioned developments, the difficulties of PAD when preparing a-few-nanometer single-crystalline materials and the opportunities in PAD for novel materials such as chiral magnetic soliton material Cr_1/3NbS₂ are discussed.

Electro-optical properties of strained monolayer boron phosphide

In this paper, we use tight-binding approximation and linear response theory to study the electronic and optical properties of strained monolayer boron-phosphide (h-BP). Compared with the previous DFT study and adding on-site energy variation to the Hamiltonian, we propose a theoretical approach to investigate the strain effects on the electronic and optical properties of the h-BP. Applying tensile strain increases the gap while compressive strain reduces it as the maximum and minimum of the gap are 1.45 eV and 1.14 eV respectively and are related to the biaxial strain. Also, we investigate the optical conductivity and electron energy loss spectrum (EELS) of the pristine and strained h-BP. The absorption peak of the [Formula: see text] appears in energy about 4 eV but applying strain shifts the peak's energy. Optical properties of pristine h-BP are isotopic and biaxial strain preserves this isotropy, but uniaxial strain exerts anisotropic behavior in the system.

Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties

Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.

A primer on twistronics: a massless Dirac fermion's journey to moiré patterns and flat bands in twisted bilayer graphene

The recent discovery of superconductivity in magic-angle twisted bilayer graphene (TBLG) has sparked a renewed interest in the strongly-correlated physics ofsp²carbons, in stark contrast to preliminary investigations which were dominated by the one-body physics of the massless Dirac fermions. We thus provide a self-contained, theoretical perspective of the journey of graphene from its single-particle physics-dominated regime to the strongly-correlated physics of the flat bands. Beginning from the origin of the Dirac points in condensed matter systems, we discuss the effect of the superlattice on the Fermi velocity and Van Hove singularities in graphene and how it leads naturally to investigations of the moiré pattern in van der Waals heterostructures exemplified by graphene-hexagonal boron-nitride and TBLG. Subsequently, we illuminate the origin of flat bands in TBLG at the magic angles by elaborating on a broad range of prominent theoretical works in a pedagogical way while linking them to available experimental support, where appropriate. We conclude by providing a list of topics in the study of the electronic properties of TBLG not covered by this review but may readily be approached with the help of this primer.

Strain engineering of hyperbolic plasmons in monolayer carbon phosphide: a first-principles study

Natural and tunable in-plane hyperbolic plasmons have so far been elusive, and hence few two-dimensional hyperbolic materials have been theoretically and experimentally discovered. Here, comprehensive first-principles calculations were conducted to study the electronic and plasmonic properties of biaxially strained monolayer carbon phosphide (β-CP). We found that (i) a compressed β-CP hosts strong anisotropic Dirac-shaped fermions with robust modulated Fermi velocity, (ii) for biaxial strain of -3% an unprecedented ultra-wide hyperbolic window is extended continuously from terahertz (9 THz) to mid-visible (blue light, 693 THz), (iii) the tunable optical Van Hove singularity as the origin of hyperbolic plasmons in deformed β-CP is disclosed, (iv) an elliptic to hyperbolic transition in the σ-near-zero regime is demonstrated in terahertz frequencies (9 THz), (v) the propagation angle of the concave wavefront can be actively tuned using biaxial strains, and (vi) hyperbolic dispersion reorientation from one principal axis to another orthogonal one under compressive strains larger than 8% is observed. This study sheds new light on the unique properties of hyperbolic two-dimensional (2D) materials having exotic optoelectronic characteristics which are promising candidates for anisotropic light control with ultimate dexterity in the flat optics.

Tunable biaxial strain device for low-dimensional materials

Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain, often with a trade-off between maximum strain and uniformity, reversibility, and device size. We present a compact device that allows for the controlled application of uniform in-plane biaxial strain, with maximum deformation and uniformity comparable to those found in much larger devices. Its performance and strain uniformity over the sample area are modeled using finite element analysis and demonstrated by measuring the response of exfoliated 2H-MoS₂ to strain by Raman spectroscopy.

Mechanical and gas adsorption properties of graphene and graphynes under biaxial strain

The exceptional properties of two-dimensional (2D) solids have motivated extensive research, which revealed the possibility of controlling many characteristics of these materials through strain. For instance, previous investigations demonstrated that compressive deformation could be used to direct the chemisorption of atomic hydrogen and oxygen. Still, to our knowledge, there is no work detailing how strain affects the adsorption isotherms of 2D materials and the adsorption properties of materials such as the graphynes, which are monolayers composed of sp and sp[Formula: see text] carbon atoms. In the present work, we analyze how biaxial tensile deformation changes the adsorption properties of four 2D materials (graphene, [Formula: see text]-graphyne, [Formula: see text]-graphyne, and [Formula: see text]-graphyne). To achieve this, we perform Monte Carlo Grand Canonical calculations to obtain the adsorption isotherms of H[Formula: see text], CO[Formula: see text], and CH[Formula: see text] on the monolayers with and without strain. And, to apply the deformation, we carry out Molecular Dynamics simulations. We find a substantial reduction in the amount of gas adsorbed on the monolayers for nearly all gas-solid combinations. This is particularly true for graphene, where 14.5% strain reduces the quantity of H[Formula: see text]/CO[Formula: see text]/CH[Formula: see text] by 44.7/64.1/41.7% at P [Formula: see text] 1 atm. To understand the results, we calculate adsorption enthalpies and analyze the gas distribution above the monolayers. We also characterize the mechanical properties of the considered solids under biaxial deformation. Finally, a comparison of pore sizes with the kinetic diameters of various gases suggests applications for the graphynes, with and without strain, in gas separation.

Strain tunable quantum emission from atomic defects in hexagonal boron nitride for telecom-bands

This study presents extending the tunability of 2D hBN Quantum emitters towards telecom (C-band - 1530 to 1560 nm) and UV-C (solar blind - 100 to 280 nm) optical bands using external strain inducements, for long- and short-range quantum communication (Quantum key distribution (QKD)) applications, respectively. Quantum emitters are the basic building blocks of this QKD (quantum communication or information) technologies, which need to emit single photons over room temperature and capable of tuning the emission wavelength to the above necessary range. Recent literature revealed that quantum emitters in 2D hBN only has the ability to withstand at elevated temperatures and aggressive annealing treatments, but density functional theory (DFT) predictions stated that hBN can only emit the single photons from around 290 to 900 nm (UV to near-IR regions) range. So, there is a need to engineer and further tune the emission wavelength of hBN quantum emitters to the above said bands (necessary for efficient QKD implementation). One of the solutions to tune the emission wavelength is by inducing external strain. In this work, we examine the tunability of quantum emission in hBN with point defects by inducing three different normal strains using DFT computations. We obtained the tunability range up to 255 nm and 1589.5 nm, for the point defects viz boron mono vacancies (V_B) and boron mono vacancies with oxygen atoms (V_BO₂) respectively, which can enhance the successful implementation of the efficient QKD. We also examine the tunability of the other defects viz. nitrogen mono vacancies, nitrogen mono vacancy with self-interstitials, nitrogen mono vacancy with carbon interstitials, carbon dimers and boron dangling bonds, which revealed the tunable quantum emission in the visible, other UV and IR spectrum ranges and such customized quantum emission can enhance the birth of other quantum photonic devices.

Paper-based broadband flexible photodetectors with van der Waals materials

Layered metal chalcogenide materials are exceptionally appealing in optoelectronic devices thanks to their extraordinary optical properties. Recently, their application as flexible and wearable photodetectors have received a lot of attention. Herein, broadband and high-performance paper-based PDs were established in a very facile and inexpensive method by rubbing molybdenum disulfide and titanium trisulfide crystals on papers. Transferred layers were characterized by SEM, EDX mapping, and Raman analyses, and their optoelectronic properties were evaluated in a wavelength range of 405–810 nm. Although the highest and lowest photoresponsivities were respectively measured for TiS₃ (1.50 mA/W) and MoS₂ (1.13 μA/W) PDs, the TiS₃–MoS₂ heterostructure not only had a significant photoresponsivity but also showed the highest on/off ratio (1.82) and fast response time (0.96 s) compared with two other PDs. This advantage is due to the band offset formation at the heterojunction, which efficiently separates the photogenerated electron–hole pairs within the heterostructure. Numerical simulation of the introduced PDs also confirmed the superiority of TiS₃–MoS₂ heterostructure over the other two PDs and exhibited a good agreement with the experimental results. Finally, MoS₂ PD demonstrated very high flexibility under applied strain, but TiS₃ based PDs suffered from its fragility and experience a remarkable drain current reduction at strain larger than ± 0.33%. However, at lower strains, all PDs displayed acceptable performances.

A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers

Two-dimensional (2D) materials have enabled promising applications in modern miniaturized devices. However, device operation may lead to substantial temperature rise and thermal stress, resulting in device failure. To address such thermal challenges, the thermal expansion coefficient (TEC) needs to be well understood. Here, we characterize the in-plane TECs of transition metal dichalcogenide (TMD) monolayers and demonstrate superior accuracy using a three-substrate approach. Our measurements confirm the physical range of 2D monolayer TECs and, hence, address the more than two orders of magnitude discrepancy in literature. Moreover, we identify the thermochemical electronegativity difference of compositional elements as a descriptor, enabling the fast estimation of TECs for various TMD monolayers. Our work presents a unified approach and descriptor for the thermal expansion of TMD monolayers, which can serve as a guideline toward the rational design of reliable 2D devices.

Magnon Straintronics in the 2D van der Waals Ferromagnet CrSBr from First-Principles

The recent isolation of two-dimensional (2D) magnets offers tantalizing opportunities for spintronics and magnonics at the limit of miniaturization. One of the key advantages of atomically thin materials is their outstanding deformation capacity, which provides an exciting avenue to control their properties by strain engineering. Herein, we investigate the magnetic properties, magnon dispersion, and spin dynamics of the air-stable 2D magnetic semiconductor CrSBr (T_C = 146 K) under mechanical strain using first-principles calculations. Our results provide a deep microscopic analysis of the competing interactions that stabilize the long-range ferromagnetic order in the monolayer. We showcase that the magnon dynamics of CrSBr can be modified selectively along the two main crystallographic directions as a function of applied strain, probing the potential of this quasi-1D electronic system for magnon straintronics applications. Moreover, we predict a strain-driven enhancement of T_C by ∼30%, allowing the propagation of spin waves at higher temperatures.

Interfacial Coupling and Modulation of van der Waals Heterostructures for Nanodevices

In recent years, van der Waals heterostructures (vdWHs) of two-dimensional (2D) materials have attracted extensive research interest. By stacking various 2D materials together to form vdWHs, it is interesting to see that new and fascinating properties are formed beyond single 2D materials; thus, 2D heterostructures-based nanodevices, especially for potential optoelectronic applications, were successfully constructed in the past few decades. With the dramatically increased demand for well-controlled heterostructures for nanodevices with desired performance in recent years, various interfacial modulation methods have been carried out to regulate the interfacial coupling of such heterostructures. Here, the research progress in the study of interfacial coupling of vdWHs (investigated by Photoluminescence, Raman, and Pump-probe spectroscopies as well as other techniques), the modulation of interfacial coupling by applying various external fields (including electrical, optical, mechanical fields), as well as the related applications for future electrics and optoelectronics, have been briefly reviewed. By summarizing the recent progress, discussing the recent advances, and looking forward to future trends and existing challenges, this review is aimed at providing an overall picture of the importance of interfacial modulation in vdWHs for possible strategies to optimize the device's performance.

Hexagonal Network of Photocurrent Enhancement in Few-Layer Graphene/InGaN Quantum Dot Junctions

Strain in two-dimensional (2D) materials has attracted particular attention because of the remarkable modification of electronic and optical properties. However, emergent electromechanical phenomena and hidden mechanisms, such as strain-superlattice-induced topological states or flexoelectricity under strain gradient, remain under debate. Here, using scanning photocurrent microscopy, we observe significant photocurrent enhancement in hybrid vertical junction devices made of strained few-layer graphene and InGaN quantum dots. Optoelectronic response and photoluminescence measurements demonstrate a possible mechanism closely tied to the flexoelectric effect in few-layer graphene, where the strain can induce a lateral built-in electric field and assist the separation of electron-hole pairs. Photocurrent mapping reveals an unprecedentedly ordered hexagonal network, suggesting the potential to create a superlattice by strain engineering. Our work provides insights into optoelectronic phenomena in the presence of strain and paves the way for practical applications associated with strained 2D materials.

Freestanding complex-oxide membranes

Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.

Tailoring Photoluminescence by Strain-Engineering in Layered Perovskite Flakes

Strain is an effective strategy to modulate the optoelectronic properties of 2D materials, but it has been almost unexplored in layered hybrid organic-inorganic metal halide perovskites (HOIPs) due to their complex band structure and mechanical properties. Here, we investigate the temperature-dependent microphotoluminescence (PL) of 2D (C₆H₅CH₂CH₂NH₃)₂Cs₃Pb₄Br₁₃ HOIP subject to biaxial strain induced by a SiO₂ ring platform on which flakes are placed by viscoelastic stamping. At 80 K, we found that a strain of <1% can change the PL emission from a single peak (unstrained) to three well-resolved peaks. Supported by micro-Raman spectroscopy, we show that the thermomechanically generated strain modulates the bandgap due to changes in the octahedral tilting and lattice expansion. Mechanical simulations demonstrate the coexistence of tensile and compressive strain along the flake. The observed PL peaks add an interesting feature to the rich phenomenology of photoluminescence in 2D HOIPs, which can be exploited in tailored sensing and optoelectronic devices.

Enhancing the Photoelectrochemical Hydrogen Evolution Reaction through Nanoscrolling of Two-Dimensional Material Heterojunctions

The clean production of hydrogen from water using sunlight has emerged as a sustainable alternative toward large-scale energy generation and storage. However, designing photoactive semiconductors that are suitable for both light harvesting and water splitting is a pivotal challenge. Atomically thin transition metal dichalcogenides (TMD) are considered as promising photocatalysts because of their wide range of available electronic properties and compositional variability. However, trade-offs between carrier transport efficiency, light absorption, and electrochemical reactivity have limited their prospects. We here combine two approaches that synergistically enhance the efficiency of photocarrier generation and electrocatalytic efficiency of two-dimensional (2D) TMDs. The arrangement of monolayer WS₂ and MoS₂ into a heterojunction and subsequent nanostructuring into a nanoscroll (NS) yields significant modifications of fundamental properties from its constituents. Spectroscopic characterization and ab initio simulation demonstrate the beneficial effects of straining and wall interactions on the band structure of such a heterojunction-NS that enhance the electrochemical reaction rate by an order of magnitude compared to planar heterojunctions. Phototrapping in this NS further increases the light-matter interaction and yields superior photocatalytic performance compared to previously reported 2D material catalysts and is comparable to noble-metal catalyst systems in the photoelectrochemical hydrogen evolution reaction (PEC-HER) process. Our approach highlights the potential of morphologically varied TMD-based catalysts for PEC-HER.

Dark-Exciton Driven Energy Funneling into Dielectric Inhomogeneities in Two-Dimensional Semiconductors

The optoelectronic and transport properties of two-dimensional transition metal dichalcogenide semiconductors (2D TMDs) are highly susceptible to external perturbation, enabling precise tailoring of material function through postsynthetic modifications. Here, we show that nanoscale inhomogeneities known as nanobubbles can be used for both strain and, less invasively, dielectric tuning of exciton transport in bilayer tungsten diselenide (WSe₂). We use ultrasensitive spatiotemporally resolved optical scattering microscopy to directly image exciton transport, revealing that dielectric nanobubbles are surprisingly efficient at funneling and trapping excitons at room temperature, even though the energies of the bright excitons are negligibly affected. Our observations suggest that exciton funneling in dielectric inhomogeneities is driven by momentum-indirect (dark) excitons whose energies are more sensitive to dielectric perturbations than bright excitons. These results reveal a new pathway to control exciton transport in 2D semiconductors with exceptional spatial and energetic precision using dielectric engineering of dark state energetic landscapes.

Tuning the Electronic and Optical Properties of the Novel Monolayer Noble-Transition-Metal Dichalcogenides Semiconductor β-AuSe via Strain: A Computational Investigation

The strain-controlled structural, electronic, and optical characteristics of monolayer β-AuSe are systematically studied using first-principles calculations in this paper. For the strain-free monolayer β-AuSe, the structure is dynamically stable and maintains good stability at room temperature. It belongs to the indirect band gap semiconductor, and its valence band maximum (VBM) and conduction band minimum (CBM) consist of hybrid Au-d and Se-p electrons. Au–Se is a partial ionic bond and a partial polarized covalent bond. Meanwhile, lone-pair electrons exist around Se and are located between different layers. Moreover, its optical properties are anisotropic. As for the strained monolayer β-AuSe, it is susceptible to deformation by uniaxial tensile strain. It remains the semiconductor when applying different strains within an extensive range; however, only the biaxial compressive strain is beyond −12%, leading to a semiconductor–semimetal transition. Furthermore, it can maintain relatively stable optical properties under a high strain rate, whereas the change in optical properties is unpredictable when applying different strains. Finally, we suggest that the excellent carrier transport properties of the strain-free monolayer β-AuSe and the stable electronic properties of the strained monolayer β-AuSe originate from the p–d hybridization effect. Therefore, we predict that monolayer β-AuSe is a promising flexible semiconductive photoelectric material in the high-efficiency nano-electronic and nano-optoelectronic fields.

Understanding Heterogeneities in Quantum Materials

Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.

Mechanical Stress Modulation of Resistance in MoS2 Junctions

Strain engineering is a powerful strategy to control the physical properties of material-enabling devices with enhanced functionality and improved performance. Here, we investigate a modulation of the transport behavior of the two-dimensional MoS₂ junctions under the mechanical stress induced by a tip of an atomic force microscope (AFM). We show that the junction resistance can be reversibly tuned by up to 4 orders of magnitude by altering a tip-induced force. Analysis of the stress-induced evolution of the I-V characteristics indicates a combined effect of the tip-induced strain and strain gradient on the energy barrier height and profile. In addition, we show that the tip-generated flexoelectric effect leads to significant enhancement of the photovoltaic effect in the MoS₂ junctions. A combination of the optical and mechanical stimuli facilitates reversible photomechanical tuning of resistance of the narrow-band 2D semiconductors and development of devices with an enhanced photovoltaic response.

Strongly Anisotropic Strain-Tunability of Excitons in Exfoliated ZrSe3

The effect of uniaxial strain on the band structure of ZrSe₃ , a semiconducting material with a marked in-plane structural anisotropy, is studied. By using a modified three-point bending test apparatus, thin ZrSe₃ flakes are subjected to uniaxial strain along different crystalline orientations monitoring the effect of strain on their optical properties through micro-reflectance spectroscopy. The obtained spectra show excitonic features that blueshift upon uniaxial tension. This shift is strongly dependent on the direction along which the strain is being applied. When the flakes are strained along the b-axis, the exciton peak shifts at ≈60-95 meV %^-1 , while along the a-axis, the shift only reaches ≈0-15 meV %^-1 . Ab initio calculations are conducted to study the influence of uniaxial strain, applied along different crystal directions, on the band structure and reflectance spectra of ZrSe₃ , exhibiting a remarkable agreement with the experimental results.

Uniaxially Strained Graphene: Structural Characteristics and G-Mode Splitting

The potential use of graphene in various strain engineering applications requires an accurate characterization of its properties when the material is under different mechanical loads. In this work, we present the strain dependence of the geometrical characteristics at the atomic level and the Raman active G-band evolution in a uniaxially strained graphene monolayer, using density functional theory methods as well as molecular dynamics atomistic simulations for strains that extend up to the structural failure. The bond length and bond angle variations with strain, applied either along the zigzag or along the armchair direction, are discussed and analytical relations describing this dependence are provided. The G-mode splitting with strain, as obtained by first principles' methods, is also presented. While for small strains, up to around 1%, the G-band splitting is symmetrical in the two perpendicular directions of tension considered here, this is no longer the case for larger values of strains where the splitting appears to be larger for strains along the zigzag direction. Further, a crossing is observed between the lower frequency split G-mode component and the out-of-plane optical mode at the Γ point for large uniaxial strains (>20%) along the zigzag direction.

Monitoring Strain-Controlled Exciton-Phonon Coupling in Layered MoS2 by Circularly Polarized Light

The modulation of exciton-phonon coupling by strain greatly affects the optical and optoelectronic properties of two-dimensional (2D) materials. Although photoluminescence and optical absorption spectra have been used to characterize the overall change of exciton-phonon coupling under strain, there has been no effective method to distinguish the evolution of the major contributions of exciton-phonon coupling, that is, deformation potential (DP) and Fröhlich interaction (FI). Here we report the direct monitoring of the evolution of DP and FI under strain in layered MoS₂ using circularly polarized Raman spectroscopy. We found that the relative proportions of DP and FI can be well evaluated by the circular polarization ratio of the E_2g¹ mode for strained MoS₂. Further, we demonstrated that the strain control of DP and FI in MoS₂ is dominated by the excitonic effect. Our method can be extended to other 2D semiconductors and would be helpful for manipulating exciton-phonon couplings by strain.

Correlation analysis of vibration modes in physical vapour deposited Bi2Se3 thin films probed by the Raman mapping technique

In this work, the Raman spectroscopy mapping technique is used for the analysis of mechanical strain in Bi₂Se₃ thin films of various (3-400 nm) thicknesses synthesized by physical vapour deposition on amorphous quartz and single-layer graphene substrates. The evaluation of strain effects is based on the correlation analysis of in-plane (E² _g) and out-of-plane (A² _1g) Raman mode positions. For Bi₂Se₃ films deposited on quartz, experimental datapoints are scattered along the line with a slope of ∼0.85, related to the distribution of hydrostatic strain. In contrast to quartz/Bi₂Se₃ samples, for graphene/Bi₂Se₃ heterostructures with the same thicknesses, an additional negative slope of ∼-0.85, which can be associated with the distribution of the in-plane (a-b) biaxial tensile strain due to the film-substrate lattice mismatch, is observed. The algorithm of phonon deformation potential (PDP) calculation based on the proposed strain analysis for the 3 nm thick Bi₂Se₃ film deposited on the graphene substrate, where the strain is considered to be coherent across the thickness, is demonstrated. The PDPs for biaxial in-plane strain of the Bi₂Se₃ 3 nm film in in-plane and out-of-plane modes are equal to -7.64 cm^-1/% and -6.97 cm^-1/%, respectively.

Mechanomaterials: A Rational Deployment of Forces and Geometries in Programming Functional Materials

The knowledge of mechanics of materials has been extensively implemented in developing functional materials, giving rise to recent advances in soft actuators, flexible electronics, mechanical metamaterials, tunable mechanochromics, regenerative mechanomedicine, etc. While conventional mechanics of materials offers passive access to mechanical properties of materials in existing forms, a paradigm shift is emerging toward proactive programming of materials' functionality by leveraging the force-geometry-property relationships. Here, such a rising field is coined as "mechanomaterials". To profile the concept, the design principles in this field at four scales is first outlined, namely the atomic scale, the molecular scale, the manipulation of nanoscale materials, and the microscale design of structural materials. A variety of techniques have been recruited to deliver the multiscale programming of functional mechanomaterials, such as strain engineering, capillary assembly, topological interlocking, kirigami, origami, to name a few. Engineering optical and biological functionalities have also been achieved by implementing the fundamentals of mechanochemistry and mechanobiology. Nonetheless, the field of mechanomaterials is still in its infancy, with many open challenges and opportunities that need to be addressed. The authors hope this review can serve as a modest spur to attract more researchers to further advance this field.

Intercalated water mediated electromechanical response of graphene oxide films on flexible substrates

The confinement of water between sub-nanometer bounding walls of layered two-dimensional materials has generated tremendous interest. Here, we examined the influence of confined water on the mechanical and electromechanical response of graphene oxide films, prepared with variable oxidative states, casted on polydimethylsiloxane substrates. These films were subjected to uniaxial strain under controlled humid environments (5 to 90% RH), while dc transport studies were performed in tandem. Straining resulted in the formation of quasi-periodic linear crack arrays. The extent of water intercalation determined the density of cracks formed in the system thereby, governing the electrical conductance of the films under strain. The crack density at 5% strain, varied from 0 to 3.5 cracks mm^-1for hydrated films and 8 to 22 cracks mm^-1for dry films, across films with different high oxidative states. Correspondingly, the overall change in the electrical conductance at 5% strain was observed to be ∼5 to 20 folds for hydrated films and ∼20 to 35 folds for the dry films. The results were modeled with a decrease in the in-plane elastic modulus of the film upon water intercalation, which was attributed to the variation in the nature of hydrogen bonding network in graphene oxide lamellae.

Exceptional Elasticity of Microscale Constrained MoS2 Domes

The outstanding mechanical performances of two-dimensional (2D) materials make them appealing for the emerging fields of flextronics and straintronics. However, their manufacturing and integration in 2D crystal-based devices rely on a thorough knowledge of their hardness, elasticity, and interface mechanics. Here, we investigate the elasticity of highly strained monolayer-thick MoS₂ membranes, in the shape of micrometer-sized domes, by atomic force microscopy (AFM)-based nanoindentation experiments. A dome's crushing procedure is performed to induce a local re-adhesion of the dome's membrane to the bulk substrate under the AFM tip's load. It is worth noting that no breakage, damage, or variation in size and shape are recorded in 95% of the crushed domes upon unloading. Furthermore, such a procedure paves the way to address quantitatively the extent of the van der Waals interlayer interaction and adhesion of MoS₂ by studying pull-in instabilities and hysteresis of the loading-unloading cycles. The fundamental role and advantage of using a superimposed dome's constraint are also discussed.