QuantumATK: an integrated platform of electronic and atomic-scale modelling tools

Electrical Contacts in Monolayer MoSi2N4 Transistors

The latest synthesized monolayer (ML) MoSi2N4 material exhibits stability in ambient conditions, suitable bandgap, and high mobilities. Its potential as a next-generation transistor channel material has been demonstrated through quantum transport simulations. However, in practical two-dimensional (2D) material transistors, the electrical contacts formed by the channel and the electrode must be optimized, as they are crucial for determining the efficiency of carrier injection. We employed the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method to systematically explore the vertical and horizontal interfaces between the typical metal electrodes and the ML MoSi2N4. The DFT+NEGF method incorporates the coupling between the electrode and the channel, which is crucial for quantum transport. Among these metals, Sc and Ti form n-type Ohmic contacts with zero tunneling barriers at both vertical and horizontal interfaces with ML MoSi2N4, making them optimal for contact metals. In-ML MoSi2N4 contacts display zero Schottky barriers but a 3.11 eV tunneling barrier. Cu and Au establish n-type Schottky contacts, while Pt forms a p-type contact. The Fermi pinning factors of the metal-ML MoSi2N4 contacts for both electrons and holes are above 0.51, much higher than the typical 2D semiconductors. Moreover, there is a strong positive correlation between the Fermi pinning factor and the band gap, with a Spearman rank correlation coefficient of 0.897 and a p-value below 0.001. Our work provides insight into the contact optimization for the ML MoSi2N4 transistors and highlights the promising potential of ML MoSi2N4 as the channel material for the next-generation FETs.

Quantum-to-classical modeling of monolayer Ge2Se2 and its application in photovoltaic devices

Since the discovery of graphene in 2004, the unique properties of two-dimensional materials have sparked intense research interest regarding their use as alternative materials in various photonic applications. Transition metal dichalcogenide monolayers have been proposed as transport layers in photovoltaic cells, but the promising characteristics of group IV-VI dichalcogenides are yet to be thoroughly investigated. This manuscript reports on monolayer Ge2Se2 (a group IV-VI dichalcogenide), its optoelectronic behavior, and its potential application in photovoltaics. When employed as a hole transport layer, the material fosters an astonishing device performance. We use ab initio modeling for the material prediction, while classical drift-diffusion drives the device simulations. Hybrid functionals calculate electronic and optical properties to maintain high accuracy. The structural stability has been verified using phonon spectra. The E-k dispersion reveals the investigated material's key electronic properties. The calculations reveal a direct bandgap of 1.12 eV for monolayer Ge2Se2. We further extract critical optical parameters using the Kubo-Greenwood formalism and Kramers-Kronig relations. A significantly large absorption coefficient and a high dielectric constant inspired the design of a monolayer Ge2Se2-based solar cell, exhibiting a high open circuit voltage of V oc = 1.11 V, a fill factor of 87.66%, and more than 28% power conversion efficiency at room temperature. Our findings advocate monolayer Ge2Se2 for various optoelectronic devices, including next-generation solar cells. The hybrid quantum-to-macroscopic methodology presented here applies to broader classes of 2D and 3D materials and structures, showing a path to the computational design of future photovoltaic materials.

Symmetry-controlled SrRuO3/SrTiO3/SrRuO3magnetic tunnel junctions: spin polarization and its relevance to tunneling magnetoresistance

Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully crystalline MTJs where spin-dependent tunneling is controlled by the symmetry group of wave vector. In this work, using first-principles quantum-transport calculations, we explore spin-dependent tunneling in fully crystalline SrRuO3/SrTiO3/SrRuO3(001) MTJs and predict tunneling magnetoresistance (TMR) of nearly 3000%. We demonstrate that this giant TMR effect is driven by symmetry matching (mismatching) of the incoming and outcoming Bloch states in the SrRuO3(001) electrodes and evanescent states in the SrTiO3(001) barrier. We argue that under the conditions of symmetry-controlled transport, spin polarization, whatever definition is used, is not a relevant measure of spin-dependent tunneling. In the presence of diffuse scattering, however, e.g. due to localized states in the band gap of the tunnel barrier, symmetry matching is no longer valid and TMR in SrRuO3/SrTiO3/SrRuO3(001) MTJs is strongly reduced. Under these conditions, the spin polarization of the interface transmission function becomes a valid measure of TMR. These results provide an important insight into understanding and optimizing TMR in all-oxide MTJs.

Elucidating charge transfer process and enhancing electrochemical performance of laser-induced graphene via surface engineering with sustainable hydrogel membranes: An electrochemist's perspective

Laser-induced graphene (LIG) has emerged as a promising solvent-free strategy for producing highly porous, 3D graphene structures, particularly for electrochemical applications. However, the unique character of LIG and hydrogel membrane (HM) coated LIG requires accounting for the specific conditions of its charge transfer process. This study investigates electron transfer kinetics and the electroactive surface area of LIG electrodes, finding efficient kinetics for the [Fe(CN)6]3-/4- redox process, with a high rate constant of 4.89 x 10-3 cm/s. The impact of polysaccharide HM coatings (cationic chitosan, neutral agarose and anionic sodium alginate) on LIG's charge transfer behavior is elucidated, considering factors like ohmic drop across porous LIG and Coulombic interactions/permeability affecting diffusion coefficient (D), estimated from amperometry.It was found that D of redox species is lower for HM-coated LIGs, and is the lowest for chitosan HM. Chitosan coating results in increased capacitive share in the total current while does not apparently reduce Faradaic current. Experimental findings are supported by ab-initio calculations showing an electrostatic potential map's negative charge distribution upon chitosan chain protonation, having an effect in over a two-fold redox current increase upon switching the pH from 7.48 to 1.73. This feature is absent for other studied HMs. It was also revealed that the chitosan's band gap was reduced to 3.07 eV upon acetylation, due to the introduction of a new LUMO state. This study summarizes the operating conditions enhanced by HM presence, impacting redox process kinetics and presenting unique challenges for prospective LIG/HM systems' electrochemical applications.

Investigation of Electric Field Tunable Optical and Electrical Characteristics of Zigzag and Armchair Graphene Nanoribbons: An Ab Initio Approach

Graphene nanoribbons (GNRs), categorized into zigzag and armchair types, hold significant promise in electronics due to their unique properties. In this study, optical properties of zigzag and armchair GNRs are investigated using density functional theory (DFT) in conjunction with Kubo-Greenwood formalism. Our findings reveal that optical characteristics of both GNR types can be extensively modulated through the application of a transverse electric field, e.g., the refractive index of the a zigzag GNR is shown to vary in the range of n = 0.3 and n = 9.9 for the transverse electric field values between 0 V/Å and 10 V/Å. Additionally, electrical transmission spectra and the electrical conductivities of the GNRs are studied using DFT combined with non-equilibrium Green's function formalism, again uncovering a strong dependence on the transverse electric field. For example, the conductance of the armchair GNR is shown to vary in the range of G = 6 μA/V and G = 201 μA/V by the transverse electric field. These results demonstrate the potential of GNRs for use in electronically controlled optoelectronic devices, promising a broad range of applications in advanced electronic systems.

Enabling Ab Initio Molecular Dynamics under Bias: The CP2K+SMEAGOL Interface for Integrating Density Functional Theory and Non-Equilibrium Green Functions

Density functional theory (DFT) combined with non-equilibrium Green's functions (NEGF) is a powerful approach to model quantum transport under external bias potentials at reasonable computational cost. In this work, we present a new interface between the popular mixed Gaussian/plane waves electronic structure package, CP2K, and the NEGF, code SMEAGOL, the most feature-rich implementation of DFT-NEGF available for CP2K to date. The CP2K+SMEAGOL interface includes the implementation of current induced forces. We verify this implementation for a variety of systems: an infinite 1D Au wire, a parallel-plate capacitor, and a Au-H2-Au junction. We find good agreement with SMEAGOL calculations performed with SIESTA for the same systems and with the example of a solvated Au wire demonstrating for the first time that DFT-NEGF can be used to perform molecular dynamics simulations under bias of large-scale condensed phase systems under realistic operating conditions.

First-Principles Simulation and Materials Screening for Spin-Orbit Torque in 2D van der Waals Heterostructures

Recent advancements in spin-orbit torque (SOT) technology in two-dimensional van der Waals (2D vdW) materials have not only pushed spintronic devices to their atomic limits but have also unveiled unconventional torques and novel spin-switching mechanisms. The vast diversity of SOT observed in numerous 2D vdW materials necessitates a screening strategy to identify optimal materials for torque device performance. However, such a strategy has yet to be established. To address this critical issue, a combination of density functional theory and non-equilibrium Green's function is employed to calculate the SOT in various 2D vdW bilayer heterostructures. This leads to the discovery of three high SOT systems: WTe2/CrSe2, MoTe2/VS2, and NbSe2/CrSe2. Furthermore, a figure of merit that allows for rapid and efficient estimation of SOT is proposed, enabling high-throughput screening of optimal materials and devices for SOT applications in the future.

Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit

Antiferromagnetic spintronics1,2 shows great potential for high-density and ultrafast information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component that are typically formed from ferromagnetic materials, have seen rapid developments very recently using antiferromagnetic materials3,4. Here we demonstrate a twisting strategy for constructing all-antiferromagnetic tunnel junctions down to the atomic limit. By twisting two bilayers of CrSBr, a 2D antiferromagnet (AFM), a more than 700% nonvolatile tunnelling magnetoresistance (TMR) ratio is shown at zero field (ZF) with the entire twisted stack acting as the tunnel barrier. This is determined by twisting two CrSBr monolayers for which the TMR is shown to be derived from accumulative coherent tunnelling across the individual CrSBr monolayers. The dependence of the TMR on the twist angle is calculated from the electron-parallel momentum-dependent decay across the twisted monolayers. This is in excellent agreement with our experiments that consider twist angles that vary from 0° to 90°. Moreover, we also find that the temperature dependence of the TMR is, surprisingly, much weaker for the twisted as compared with the untwisted junctions, making the twisted junctions even more attractive for applications. Our work shows that it is possible to push nonvolatile magnetic information storage to the atomically thin limit.

Simulations of Anisotropic Monolayer GaSCl for p-Type Sub-10 nm High-Performance and Low-Power FETs

Two-dimensional materials have been extensively studied in field-effect transistors (FETs). However, the performance of p-type FETs has lagged behind that of n-type, which limits the development of complementary logical circuits. Here, we investigate the electronic properties and transport performance of anisotropic monolayer GaSCl for p-type FETs through first-principles calculations. The anisotropic electronic properties of monolayer GaSCl result in excellent device performance. The p-type GaSCl FETs with 10 nm channel length have an on-state current of 2351 μA/μm for high-performance (HP) devices along the y direction and an on-state current of 992 μA/μm with an on/off ratio exceeding 107 for low-power (LP) applications along the x direction. In addition, the delay-time (τ) and power dissipation product of GaSCl FETs can fully meet the International Technology Roadmap for Semiconductors standards for HP and LP applications. Our work illustrates that monolayer GaSCl is a competitive p-type channel for next-generation devices.

Geometric Amplitude Accompanying Local Responses: Spinor Phase Information from the Amplitudes of Spin-Polarized STM Measurements

Solving the Hamiltonian of a system yields the energy dispersion and eigenstates. The geometric phase of the eigenstates generates many novel effects and potential applications. However, the geometric properties of the energy dispersion go unheeded. Here, we provide geometric insight into energy dispersion and introduce a geometric amplitude, namely, the geometric density of states (GDOS) determined by the Riemann curvature of the constant-energy contour. The geometric amplitude should accompany various local responses, which are generally formulated by the real-space Green's function. Under the stationary phase approximation, the GDOS simplifies the Green's function into its ultimate form. In particular, the amplitude factor embodies the spinor phase information of the eigenstates, favoring the extraction of the spin texture for topological surface states under an in-plane magnetic field through spin-polarized STM measurements. This work opens a new avenue for exploring the geometric properties of electronic structures and excavates the unexplored potential of spin-polarized STM measurements to probe the spinor phase information of eigenstates from their amplitudes.

Enhancing the Electrochemical Activity of 2D Materials Edges through Oriented Electric Fields

The edges of 2D materials have emerged as promising electrochemical catalyst systems, yet their performance still lags behind that of noble metals. Here, we demonstrate the potential of oriented electric fields (OEFs) to enhance the electrochemical activity of 2D materials edges. By atomically engineering the edge of a fluorographene/graphene/MoS2 heterojunction nanoribbon, strong and localized OEFs were realized as confirmed by simulations and spatially resolved spectroscopy. The observed fringing OEF results in an enhancement of the heterogeneous charge transfer rate between the edge and the electrolyte by 2 orders of magnitude according to impedance spectroscopy. Ab initio calculations indicate a field-induced decrease in the reactant adsorption energy as the origin of this improvement. We apply the OEF-enhanced edge reactivity to hydrogen evolution reactions (HER) and observe a significantly enhanced electrochemical performance, as evidenced by a 30% decrease in Tafel slope and a 3-fold enhanced turnover frequency. Our findings demonstrate the potential of OEFs for tailoring the catalytic properties of 2D material edges toward future complex reactions.

Thermoelectric Properties Regulated by Quantum Size Effects in Quasi-One-Dimensional γ-Graphdiyne Nanoribbons

Using density functional theory combined with the first principles calculation method of non-equilibrium Green's function (NEGF-DFT), we studied the thermoelectric (TE) characteristics of one-dimensional γ-graphdiyne nanoribbons (γ-GDYNRs). The study found that the thermal conductivity of γ-GDYNRs has obvious anisotropy. At the same temperature and geometrical size, the lattice thermal conductivity of zigzag-edged γ-graphdiyne nanoribbons (γ-ZGDYNRs) is much lower than that of armchair-edged γ-graphdiyne nanoribbons (γ-AGDYNRs). We disclose the underlying mechanism for this intrinsic orientation. That is, γ-AGDYNRs have more phonon dispersion over the entire frequency range. Furthermore, the orientation dependence increases when the width of the γ-GDYNRs decreases. These excellent TE properties allow armchair-edged γ-graphdiyne nanoribbons with a planar width of 1.639 nm (γ-Z(2)GDYNRs) to have a higher power factor and lower thermal conductivity, ultimately resulting in a significantly higher TE conversion rate than other γ-GDYNR structures.

Role of Interfacial Morphology in Cu2O/TiO2 and Band Bending: Insights from Density Functional Theory

Photocatalysis, a promising solution to environmental challenges, relies on the generation and utilization of photogenerated charge carriers within photocatalysts. However, the recombination of these carriers often limits efficiency. Heterostructures, especially Cu2O/TiO2, have emerged as effective solutions to enhance charge separation. This study systematically explores the effect of interfacial morphologies on the band bending within Cu2O/TiO2 anatase heterostructures by employing density functional theory. Through this study, eight distinct interfaces are identified and analyzed, revealing a consistent staggered-type band alignment. Despite variations in band edge positions, systematic charge transfer from Cu2O to TiO2 is observed across all interfaces. The proposed band bending configurations would suggest enhanced charge separation and photocatalytic activity under ultraviolet illumination due to a Z-scheme configuration. This theoretical investigation provides valuable insights into the interplay between interfacial morphology, band bending, and charge transfer for advancing the understanding of fundamental electronic mechanisms in heterostructures.

Chirality-Induced Spin Selectivity: Analysis of Density Functional Theory Calculations

Chirality-induced spin selectivity (CISS), which was demonstrated in several molecular and material systems, has drawn much interest recently. The phenomenon, described in electron transport by the difference in the transport rate of electrons of opposite spins through a chiral system, is however not fully understood. Herein, we employed density functional theory in conjunction with spin-orbit coupling to evaluate the percent spin-polarization in a device setup with finite electrodes at zero bias, using an electron transport program developed in-house. To study the interface effects and the level of theory considered, we investigated a helical oligopeptide chain, an intrinsically chiral gold cluster, and a helicene model system that was previously studied (Zöllner et al. J. Chem. Theory Comput. 2020, 16, 7357-7371). We find that the magnitude of the spin-polarization depends on the chiral system-electrode interface that is modeled by varying the interface boundary between the system's regions, on the method of calculating spin-orbit coupling, and on the exchange-correlation functional, e.g., the amount of exact exchange in the hybrid functionals. In addition, to assess the effects of bias, we employ the nonequilibrium Green's function formalism in the Quantum Atomistix Toolkit program, showing that the spin-flip terms could be important in calculating the CISS effect. Although understanding CISS in comparison to experiment is still not resolved, our study provides intrinsic responses from first-principles calculations.

Highly Efficient Spin Injection and Readout Across Van Der Waals Interface

Spin injection, transport, and detection across the interface between a ferromagnet and a spin-carrying channel are crucial for energy-efficient spin logic devices. However, interfacial conductance mismatch, spin dephasing, and inefficient spin-to-charge conversion significantly reduce the efficiency of these processes. In this study, it is demonstrated that an all van der Waals heterostructure consisting of a ferromagnet (Fe3GeTe2) and Weyl semimetal enables a large spin readout efficiency. Specifically, a nonlocal spin readout signal of 150 mΩ and a local spin readout signal of 7.8 Ω is achieved, which reach the signal level useful for practical spintronic devices. The remarkable spin readout signal is attributed to suppressed spin dephasing channels at the vdW interfaces, long spin diffusion, and efficient charge-spin interconversion in Td-MoTe2. These findings highlight the potential of vdW heterostructures for spin Hall effect-enabled spin detection with high efficiency, opening up new possibilities for spin-orbit logic devices using vdW interfaces.

High-Performance One-Dimensional Sub-5 nm Transistors Based on Poly(p-phenylene ethynylene) Molecular Wires

Poly(p-phenylene ethynylene) (PPE) molecular wires are one-dimensional materials with distinctive properties and can be applied in electronic devices. Here, the approach called first-principles quantum transport is utilized to investigate the PPE molecular wire field-effect transistor (FET) efficiency limit through the geometry of the gate-all-around (GAA) instrument. It is observed that the n-type GAA PPE molecular wire FETs with a suitable gate length (Lg = 5 nm) and underlap (UL = 1, 2, 3 nm) can gratify the on-state current (Ion), power dissipation (PDP), and delay period (τ) concerning the conditions in 2028 to achieve the higher performance (HP) request of the International Roadmap for Device and Systems (IRDS, 2022 version). In contrast, the p-type GAA PPE molecular wire FETs with Lg = 5, 3 nm, and UL of 1, 2, 3 nm could gratify the Ion, PDP, and τ concerning the 2028 needs to achieve the HP request of the IRDS in 2022, while Lg = 5 and UL = 3 nm could meet the Ion and τ concerning the 2028 needs to achieve the LP request of the IRDS in 2022. More importantly, this is the first one-dimensional carbon-based ambipolar FET. Therefore, the GAA PPE molecular wire FETs could be a latent choice to downscale Moore's law to 3 nm.

Quantum interference enhances the performance of single-molecule transistors

Quantum effects in nanoscale electronic devices promise to lead to new types of functionality not achievable using classical electronic components. However, quantum behaviour also presents an unresolved challenge facing electronics at the few-nanometre scale: resistive channels start leaking owing to quantum tunnelling. This affects the performance of nanoscale transistors, with direct source-drain tunnelling degrading switching ratios and subthreshold swings, and ultimately limiting operating frequency due to increased static power dissipation. The usual strategy to mitigate quantum effects has been to increase device complexity, but theory shows that if quantum effects can be exploited in molecular-scale electronics, this could provide a route to lower energy consumption and boost device performance. Here we demonstrate these effects experimentally, showing how the performance of molecular transistors is improved when the resistive channel contains two destructively interfering waves. We use a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor to demonstrate a >104 conductance-switching ratio, a subthreshold swing at the thermionic limit, a >7 kHz operating frequency and stability over >105 cycles. We fully map the anti-resonance interference features in conductance, reproduce the behaviour by density functional theory calculations and trace back the high performance to the coupling between molecular orbitals and graphene edge states. These results demonstrate how the quantum nature of electron transmission at the nanoscale can enhance, rather than degrade, device performance, and highlight directions for future development of miniaturized electronics.

Simulation of electrical rectification effect in two-dimensional MoSe2/WSe2lateral heterostructures

Two-dimensional (2D) transition metal dichalcogenides lateral heterostructures exhibit excellent performance in electrics and optics. The electron transport of the heterostructures can be effectively regulated by ingenious design. In this study, we construct a monolayer MoSe2/WSe2lateral heterostructure, covalently connecting monolayer MoSe2and monolayer WSe2. Using the Extended Huckel Theory method, we explored current-voltage characteristics under varied conditions, including altering carrier density, atomic replacement and interface angles. Calculations demonstrate a significant electrical rectification ratio (ERR) ranging from 200 to 800. Additionally, Employing Density Functional Theory with non-equilibrium Green's function method, we investigated electronic properties, attributing the rectification effect to electronic state distribution differences, asymmetric transmission coefficients and band bending of projected local density of states. The expandability of the interfacial energy barrier enhances the rectification effect through adjustments in carrier concentration, atomic replacements and interface size. However, these enhancements introduce challenges such as increased electron-boundary scattering and reduced ambipolarity, resulting in a lower ERR. This study provides valuable theoretical insights for optimizing 2D electronic diode devices, offering avenues for precise control of the rectification effect.

Coherent spin transport in a copper protein

CONTEXT

The coherent electron/spin transport in azurin, a species of copper protein, was calculated based on the Landauer model. The research is motivated by the fast electron transport and spin selectivity/polarization in azurin, which have been reported in relation to the chiral-induced spin selectivity of the peptide structure. The calculated spin polarization of copper proteins was large. This phenomenon was strongly influenced by the spin density of the atoms in the ligand group, whereas the contribution of copper was negligible. The results suggest that spin polarization in copper proteins is enhanced by that of the ligand groups. The predicted spin polarization aligns primarily with the scanning tunneling microscope-based break-junction technique to study the electronic properties of single-molecule junctions.

METHODS

Computational techniques employed in this study are nonequilibrium Green's functions (NEGF) and density functional theory (DFT) based on the Landauer model, implemented using the QuantumATK software (Synopsys Inc.). The Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional was adopted for spin-polarized generalized gradient approximation (SGGA). The valence atomic orbitals were constructed using the wavefunctions of the SIESTA package, which was based on the norm-conserving Troullier-Martins relativistic pseudopotentials for describing core electrons. The mesh used for real-space integration was 150 Ha.

Diethylbenzene and ethyltoluene adsorption studies on novel beta antimonide phosphorus nanosheets-a first-principle study

CONTEXT

In the present work, we examined the sensing behavior of monolayer beta antimonide phosphorus (β-SbP) sheets towards toxic volatile organic compounds (VOCs) namely, 1,2-diethylbenzene and 2-ethyltoluene using density functional theory (DFT) method. At first, using cohesive energy structural stability of the monolayer β-SbP is confirmed. The calculated energy band gap value of monolayer β-SbP is 2.168 eV, which is a semiconductor. Furthermore, the adsorption properties of 1,2-diethylbenzene and 2-ethyltoluene on β-SbP are studied through key factors, such as adsorption energy, Mulliken charge transfer, and relative band gap variation. The adsorption energy clearly shows (- 0.335 to - 0.903 eV) that both 1,2-diethylbenzene and 2-ethyltoluene are physisorbed on β-SbP monolayer. Besides, Mulliken charge transfer falls in the range of - 0.465 to 0.933 e; this information clearly shows that the β-SbP monolayer is a potential candidate for sensing 1,2-diethylbenzene and 2-ethyltoluene molecules.

METHODS

The structural firmness including electronic and adsorption properties of 1,2-diethylbenzene and 2-ethyltoluene on β-SbP monolayer are investigated with the support of the DFT method. Particularly, the hybrid generalized gradient approximation (hybrid GGA) along with Beck's three-parameter + Lee-Yang-Parr (B3LYP) exchange-correlation functional is utilized for relaxing the β-SbP monolayer. In the present work, all calculations are performed using the Quantum Atomistic Tool Kit (ATK) simulation package. In the present work, we utilized β-SbP monolayer as a chief sensing element to detect 1,2-diethylbenzene and 2-ethyltoluene to safeguard humans from toxic environments.

High-Entropy Oxides: A New Frontier in Photocatalytic CO2 Hydrogenation

Herein, we investigate the potential of nanostructured high-entropy oxides (HEOs) for photocatalytic CO2 hydrogenation, a process with significant implications for environmental sustainability and energy production. Several cerium-oxide-based rare-earth HEOs with fluorite structures were prepared for UV-light driven photocatalytic CO2 hydrogenation toward valuable fuels and petrochemical precursors. The cationic composition profoundly influences the selectivity and activity of the HEOs, where the Ce0.2Zr0.2La0.2Nd0.2Sm0.2O2-δ catalyst showed outstanding CO2 activation (14.4 molCO kgcat-1 h-1 and 1.27 mol CH 3 OH kgcat-1 h-1) and high methanol and CO selectivity (7.84% CH3OH and 89.26% CO) under ambient conditions with 4 times better performance in comparison to pristine CeO2. Systematic tests showed the effect of a high-entropy system compared to midentropy oxides. XPS, in situ DRIFTS, as well as DFT calculation elucidate the synergistic impact of Ce, Zr, La, Nd, and Sm, resulting in an optimal Ce3+/Ce4+ ratio. The observed formate-routed mechanism and a surface with high affinity to CO2 reduction offer insights into the photocatalytic enhancement. While our findings lay a solid foundation, further research is needed to optimize these catalysts and expand their applications.

Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses

An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and subsequently transferred onto GaN substrate using polymethylmethacrylate (PMMA). The morphological and optical properties of the as-prepared graphene and GaN were presented. The fabricated PD based on the graphene/GaN heterostructure exhibited excellent rectify behavior by measuring the current-voltage (I-V) characteristics under dark conditions, and the spectral response demonstrated that the device revealed an UV-IR dual-wavelength photoresponse. In addition, the energy band structure and absorption properties of the ML graphene/GaN heterostructure were theoretically investigated based on density functional theory (DFT) to explore the underlying physical mechanism of the two-dimensional (2D)/three-dimensional (3D) hybrid heterostructure PD device. This work paves the way for the development of innovative GaN-based dual-wavelength optoelectronic devices, offering a potential strategy for future applications in the field of advanced photodetection technology.

Bilayer C60 Polymer/h-BN Heterostructures: A DFT Study of Electronic and Optic Properties

Interest in fullerene-based polymer structures has renewed due to the development of synthesis technologies using thin C60 polymers. Fullerene networks are good semiconductors. In this paper, heterostructure complexes composed of C60 polymer networks on atomically thin dielectric substrates are modeled. Small tensile and compressive deformations make it possible to ensure appropriate placement of monolayer boron nitride with fullerene networks. The choice of a piezoelectric boron nitride substrate was dictated by interest in their applicability in mechanoelectric, photoelectronic, and electro-optical devices with the ability to control their properties. The results we obtained show that C60 polymer/h-BN heterostructures are stable compounds. The van der Waals interaction that arises between them affects their electronic and optical properties.

Experimental and computational approach of zirconium and chitosan doped NiCo2O4 nanorods served as dye degrader and bactericidal action

Different concentrations of zirconium with a fixed quantity (4 wt%) of chitosan (CS) doped nickel cobaltite (NiCo2O4) nanorods were synthesized using a co-precipitation approach. This cutting-edge research explores the cooperative effect of Zr-doped CS-NiCo2O4 to degrade the Eriochrome black T (EBT) and investigates potent antibacterial activity against Staphylococcus aureus (S. aureus). Advanced characterization techniques were conducted to analyze structural textures, morphological analysis, and optical characteristics of synthesized materials. XRD pattern unveiled the spinal cubic structure of NiCo2O4, incorporating Zr and CS peak shifted to a lower 2θ value. UV-Vis spectroscopy revealed the absorption range increased with CS and the same trend was observed upon Zr, showing a decrease in bandgap energy (Eg) from 2.55 to 2.4 eV. The optimal photocatalytic efficacy of doped NiCo2O4 within the basic medium was around 96.26 %, and bactericidal efficacy was examined against S. aureus, revealing a remarkable inhibition zone (5.95 mm).

The Stability of Hydrogen-Bonded Ion-Pair Complex Unexpectedly Increases with Increasing Solvent Polarity

The generally observed decrease of the electrostatic energy in the complex with increasing solvent polarity has led to the assumption that the stability of the complexes with ion-pair hydrogen bonds decreases with increasing solvent polarity. Besides, the smaller solvent-accessible surface area (SASA) of the complex in comparison with the isolated subsystems results in a smaller solvation energy of the latter, leading to a destabilization of the complex in the solvent compared to the gas phase. In our study, which combines Nuclear Magnetic Resonance, Infrared Spectroscopy experiments, quantum chemical calculations, and molecular dynamics (MD) simulations, we question the general validity of this statement. We demonstrate that the binding free energy of the ion-pair hydrogen-bonded complex between 2-fluoropropionic acid and n-butylamine (CH3CHFCOO-…NH3But+) increases with increased solvent polarity. This phenomenon is rationalized by a substantial charge transfer between the subsystems that constitute the ion-pair hydrogen-bonded complex. This unexpected finding introduces a new perspective to our understanding of solvation dynamics, emphasizing the interplay between solvent polarity and molecular stability within hydrogen-bonded systems.

Effects of Connectivity Isomerization on Electron Transport Through Thiophene Heterocyclic Molecular Junction

Connectivity isomerization of the same aromatic molecular core with different substitution positions profoundly affects electron transport pathways and single-molecule conductance. Herein, we designed and synthesized all connectivity isomers of a thiophene (TP) aromatic ring substituted by two dihydrobenzo[b]thiophene (BT) groups with ethynyl spacers (m,n-TP-BT, (m,n = 2,3; 2,4; 2,5; 3,4)), to systematically probe how connectivity contributes to single-molecule conductance. Single-molecule conductance measurements using a scanning tunneling microscopy break junction (STM-BJ) technique show ∼12-fold change in conductance values, which follow an order of 10-4.83 G0 (2,4-TP-BT) < 10-4.78 G0 (3,4-TP-BT) < 10-4.06 G0 (2,3-TP-BT) < 10-3.75 G0 (2,5-TP-BT). Electronic structure analysis and theoretical simulations show that the connectivity isomerization significantly changes electron delocalization and HOMO-LUMO energy gaps. Moreover, the connectivity-dependent molecular structures lead to different quantum interference (QI) effects in electron transport, e.g., a strong destructive QI near E = EF leads the smallest conductance value for 2,4-TP-BT. This work proves a clear relationship between the connectivity isomerization and single-molecule conductance of thiophene heterocyclic molecular junctions for the future design of molecular devices.

Theoretical Insight into the Band Alignment at High-κ Oxide XO2/Diamond (X = Hf and Zr) Interfaces with a SiO2 Interlayer for MOS Devices

Diamond has become a promising candidate for high-power devices based on its ultrawide bandgap and excellent thermoelectric properties, where an appropriate gate dielectric has been a bottleneck hindering the development of diamond devices. Herein, we have systematically investigated the structural arrangement and electronic properties of diamond/high-κ oxide (HfO2, ZrO2) heterojunctions by first-principles calculations with a SiO2 interlayer. Charge analysis reveals that the C-Si bonding interface attracts a large amount of charge concentrated at the diamond interface, indicating the potential for the formation of a 2D hole gas (2DHG). The diamond/HfO2 and diamond/ZrO2 heterostructures exhibit similar "Type II" band alignments with VBOs of 2.47 and 2.21 eV, respectively, which is consistent with experimental predictions. The introduction of a SiO2 dielectric layer into the diamond/SiO2/high-κ stacks exhibits the typical "Type I″ straddling band offsets (BOs). In addition, the wide bandgap SiO2 interlayer keeps the valence band maximum (VBM) and conduction band minimum (CBM) in the stacks away from those of diamond, effectively confining the electrons and holes in MOS devices. This work exhibits the potential of SiO2/high-κ oxide gate dielectrics for diamond devices and provides theoretical insights into the rational design of high-quality gate dielectrics for diamond-based MOS device applications.

2D Lateral Heterojunction Arrays with Tailored Interface Band Bending

Two-dimensional (2D) lateral heterojunction arrays, characterized by well-defined electronic interfaces, hold significant promise for advancing next-generation electronic devices. Despite this potential, the efficient synthesis of high-density lateral heterojunctions with tunable interfacial band alignment remains a challenging. Here, a novel strategy is reported for the fabrication of lateral heterojunction arrays between monolayer Si2Te2 grown on Sb2Te3 (ML-Si2Te2@Sb2Te3) and one-quintuple-layer Sb2Te3 grown on monolayer Si2Te2 (1QL-Sb2Te3@ML-Si2Te2) on a p-doped Sb2Te3 substrate. The site-specific formation of numerous periodically arranged 2D ML-Si2Te2@Sb2Te3/1QL-Sb2Te3@ML-Si2Te2 lateral heterojunctions is realized solely through three epitaxial growth steps of thick-Sb2Te3, ML-Si2Te2, and 1QL-Sb2Te3 films, sequentially. More importantly, the precisely engineering of the interfacial band alignment is realized, by manipulating the substrate's p-doping effect with lateral spatial dependency, on each ML-Si2Te2@Sb2Te3/1QL-Sb2Te3@ML-Si2Te2 junction. Atomically sharp interfaces of the junctions with continuous lattices are observed by scanning tunneling microscopy. Scanning tunneling spectroscopy measurements directly reveal the tailored type-II band bending at the interface. This reported strategy opens avenues for advancing lateral epitaxy technology, facilitating practical applications of 2D in-plane heterojunctions.

Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications

Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium oxide (In2O3) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain current (104 μA/μm) and transconductance (4000 μS/μm). Here, we employ ab initio quantum transport simulation to investigate the performance limit of sub-5 nm gate length (Lg) ultrathin In2O3 FETs. Based on the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, the scaling limit of ultrathin In2O3 FETs can reach 2 nm in terms of on-state current, delay time, and power dissipation. The wide bandgap nature of ultrathin In2O3 (3.0 eV) renders it a suitable candidate for ITRS low-power (LP) electronics with Lg down to 3 nm. Notably, both the HP and LP ultrathin In2O3 FETs exhibit superior energy-delay products as compared to those of other common 2D semiconductors such as monolayer MoS2 and MoTe2. These findings unveil the potential of ultrathin In2O3 in HP and LP nanoelectronic device applications.

Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS2/WSe2 van der Waals Heterostructures

Achieving low-resistance Ohmic contacts with a vanishing Schottky barrier is crucial for enhancing the performance of two-dimensional (2D) field-effect transistors (FETs). In this paper, we present a theoretical investigation of VS2/WSe2-vdWHs-FETs with a gate length (Lg) in the range of 1-5 nm, using ab initio quantum transport simulations. The results show that a very low hole Schottky barrier height (-0.01 eV) can be achieved with perfect band offsets and reduced metal-induced gap states (MIGS), indicating the formation of p-type Ohmic contacts. Additionally, these FETs also exhibit an impressive low subthreshold swing (SS) (69 mV/dec) and high Ion/Ioff (>107) with an appropriate underlap (UL) structure consisting of pristine WSe2. Furthermore, even when the Lg is scaled down to 3 nm, the device can still meet the low-power (LP) requirements of the International Technology Roadmap for Semiconductors (ITRS) by controlling the UL. Consequently, this study provides valuable insights for the future development of LP 2D FETs.

Adsorption of Polylactic-co-Glycolic Acid on Zinc Oxide Systems: A Computational Approach to Describe Surface Phenomena

Zinc oxide and polylactic-co-glycolic acid (ZnO-PLGA) nanocomposites are known to exhibit different biomedical applications and antibacterial activity, which could be beneficial for adding to wound dressings after different surgeries. However, possible cytotoxic effects along with various unexpected activities could reduce the use of these prominent systems. This is correlated to the property of ZnO, which exhibits different polymeric forms, in particular, wurtzite, zinc-blende, and rocksalt. In this study, we propose a computational approach based on the density functional theory to investigate the properties of ZnO-PLGA systems in detail. First, three different stable polymorphs of ZnO were considered. Subsequently, the abilities of each system to absorb the PLGA copolymer were thoroughly investigated, taking into account the modulation of electrical, optical, and mechanical properties. Significant differences between ZnO and PLGA systems have been found; in this study, we remark on the potential use of these models and the necessity to describe crucial surface aspects that might be challenging to observe with experimental approaches but which can modulate the performance of nanocomposites.

First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor

Two-dimensional (2D) materials have received significant attention for their potential use in next-generation electronics, particularly in nonvolatile memory and neuromorphic computing. This is due to their simple metal-insulator-metal (MIM) sandwiched structure, excellent switching performance, high-density capability, and low power consumption. In this work, using comprehensive material simulations and device modeling, the thinnest monolayer hexagonal boron nitride (h-BN) atomristor is studied by using a MIM configuration with Ta electrodes. Our first-principles calculations predicted both a high resistance state (HRS) and a low resistance state (LRS) in this device. We observed that the presence of van der Waals (vdW) gaps between the Ta electrodes and monolayer h-BN with a boron vacancy (VB) contributes to the HRS. The combination of metal electrode contact and the adsorption of Ta atoms onto a single VB defect (TaB) can alter the interface barrier between the electrode and dielectric layer, as well as create band gap states within the band gap of monolayer h-BN. These band gap states can shorten the effective tunneling path for electron transport from the left electrode to the right electrode, resulting in an increase in the current transmission coefficient of the LRS. This resistive switching mechanism in monolayer h-BN atomristors can serve as a theoretical reference for device design and optimization, making them promising for the development of atomristor technology with ultra-high integration density and ultra-low power consumption.

Multilayer WS2 for low-power visible and near-infrared phototransistors

Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.

Group III (In/Ga)-V (P/As)-VI (S/Se) Monolayers: A New Class of Auxetic Semiconductors with Highly Anisotropic Electronic/Optical/Mechanical/Thermal Properties

We present a theoretical design of a class of 2D semiconducting materials, namely, group III (In/Ga)-V (P/As)-VI (S/Se) monolayers, whose global-minimum structures are predicted based on the particle swarm optimization method. Electronic structure calculations suggest that all group III-V-VI monolayers exhibit quasi-direct semiconducting characteristics with desirable band gaps ranging from 1.76 to 2.86 eV (HSE06 functional). Moreover, most group III-V-VI monolayers possess highly anisotropic carrier mobilities with large anisotropic ratios (3.4-6 for electrons, 2.2-25 for holes). G0W0+BSE calculations suggest that these monolayers show high optical anisotropy and relatively large exciton binding energies (0.33-0.75 eV), comparable to that (0.5 eV) of MoS2 monolayer. In particular, the GaPS monolayer manifests strikingly anisotropic I-V curves with a large ON/OFF ratio of ∼105 (106 for the GaPS bilayer) and anisotropic lattice thermal conductivity. Furthermore, the GaPS monolayer is predicted to exhibit both in-plane and out-of-plane negative Poisson ratios (NPRs) and prominent anisotropic Young moduli.

Suppressing the Conductance of Single-Molecule Junctions Fabricated by sp2 C-H Bond Metalation

High-conducting single-molecule junctions have attracted a great deal of attention, but insulating single-molecule junctions, which are critical in molecular circuits, have been less investigated due to the long-standing challenges. Herein, the in situ formation of a Au-C linker via electrical-potential-mediated sp2 C-H bond metalation of polyfluoroarenes with the assistance of scanning tunneling microscope-based break junction technique is reported. This metalation process is bias-dependent and occurs with an electropositive electrode, and the formed junction is highly oriented. Surprisingly, these polyfluoroarenes exhibit unexpected low conductance even under short molecular lengths and are superior molecular insulators. Flicker noise analysis and DFT calculations confirm that the insulating properties of polyfluoroarenes are ascribed to their multiple fluorine substituents. Our results pave a way for constructing oriented asymmetric molecular junctions and provide an efficient strategy to suppress the single-molecule conductance, which will aid in the design of molecular insulators and advance the development of self-integrating functional molecular circuits.

Tuning charge transport by manipulating concentration dependent single-molecule absorption configurations

Understanding and tuning charge transport in molecular junctions is pivotal for crafting molecular devices with tailored functionalities. Here, we report a novel approach to manipulate the absorption configuration within a 4,4'-bipyridine (4,4'-BPY) molecular junction, utilizing the scanning tunneling microscope break junction technique in a concentration-dependent manner. Single-molecule conductance measurements demonstrate that the molecular junctions exhibit a significant concentration dependence, with a transition from high conductance (HC) to low conductance (LC) states as the concentration decreases. Moreover, we identified an additional conductance state in the molecular junctions besides already known HC and LC states. Flicker noise analysis and theoretical calculations provided valuable insights into the underlying charge transport mechanisms and single-molecule absorption configurations concerning varying concentrations. These findings contribute to a fundamental comprehension of charge transport in concentration-dependent molecular junctions. Furthermore, they offer promising prospects for controlling single-molecule adsorption configurations, thereby paving the way for future molecular devices.

Excitonic cuprophilic interactions in one-dimensional hybrid organic-inorganic crystals

The everlasting pursuit of hybrid organic-inorganic lead-free semiconductors has directed the focus towards eco-friendly copper-based systems, perhaps because of the diversity in chemistry, controlling the structure-property relationship. In this work, we report single crystals of a Cu(i) halide-based perovskite-like organic-inorganic hybrid, (TMA)Cu2Br3, (TMA = tetramethylammonium), consisting of unusual one-dimensional inorganic anionic chains of -(Cu2Br3)-, electrostatically stabilized by organic cations, and the Cu(i)-Cu(i) distance of 2.775 Å indicates the possibility of cuprophilic interactions. X-ray photoelectron spectroscopy measurements further confirmed the presence of exclusive Cu(i) in (TMA)Cu2Br3 and electronic structure calculations based on density functional theory suggested a direct bandgap value of 2.50 eV. The crystal device demonstrated an impressive bulk photovoltaic effect due to the emergence of excitonic Cu(i)-Cu(i) interactions, as was clearly visualized in the charge-density plot as well as in the Raman spectroscopic analysis. The single crystals of a silver analogue, (TMA)Ag2Br3, have also been synthesized revealing a Ag(i)-Ag(i) distance of 3.048 Å (signature of an argentophilic interaction). Unlike (TMA)Cu2Br3, where more density of states from Cu compared to Br near the Fermi level was observed, (TMA)Ag2Br3 exhibited the opposite trend, possibly due to variation in the ionic potential influencing the overall bonding scenario.

Exploring the impact of stress on the electronic structure and optical properties of graphdiyne nanoribbons for advanced optoelectronic applications

Graphdiyne (GDY), a two-dimensional carbon material with sp- and sp2-hybridization, is recognized for its unique electronic properties and well-dispersed porosity. Its versatility has led to its use in a variety of applications. The precise control of this material's properties is paramount for its effective utilization in nano-optical devices. One effective method of regulation, which circumvents the need for additional disturbances, involves the application of external stress. This technique provides a direct means of eliciting changes in the electronic characteristics of the material. For instance, when subjected to uniaxial stress, electron transfer occurs at the triple bond. This results in an armchair-edged graphdiyne nanoribbon (A(3)-GDYNR) with a planar width of 2.07 nm, which exhibits a subtle plasmon effect at 500 nm. Conversely, a zigzag-edged graphdiyne nanoribbon (Z(3)-GDYNR) with a planar width of 2.86 nm demonstrates a pronounced plasmon effect within the 250-1200 nm range. This finding suggests that the zigzag nanoribbon surpasses the armchair nanoribbon in terms of its plasmon effect. First principles calculations and ab initio molecular dynamics further confirmed that under applied stress Z(3)-GDYNR exhibits less deformation than A(3)-GDYNR, indicating superior stability. This work provides the necessary theoretical basis for understanding graphene nanoribbons (GDYNRs).

Switchable Chemical-Bond Reorganization for the Stable Charge Trapping in Amorphous Silicon Nitride

Despite the widespread use of charge-trap flash (CTF) memory, the atomistic mechanism behind the exceptionally stable charge storage at the localized trap sites is still controversial. Herein, by combining first-principles calculations and orbital interaction analysis, a charge-dependent switchable chemical-bond reorganization is elucidated as the underpinning chemistry in the working mechanism of CTF. Especially, positively charged fourfold-coordinated nitrogen (dubbed N+ center), unappreciated until now, is the decisive component of the entire process; once an electron occupies this site, the N+ center disappears by breaking one N─Si bond, simultaneously forming a new Si─Si bond with a nearby Si atom which, in turn, creates fivefold coordinated Si. As a result, the electron is stored in a multi-center orbital belonging to multiple atoms including the newly formed Si─Si bond. It is also observed that hole trapping accompanies the creation of an N+ center by forming a new N─Si bond, which represents the reverse process. To further support and validate this model by means of core-level calculations, it is also shown that an N+ center's 1s core level is 1.0-2.5 eV deeper in energy than those of the threefold coordinated N atoms, in harmony with experimental X-ray photoelectron spectroscopy data.

Proposal for All-Electrical Skyrmion Detection in van der Waals Tunnel Junctions

A major challenge for magnetic skyrmions in atomically thin van der Waals (vdW) materials is reliable skyrmion detection. Here, based on rigorous first-principles calculations, we show that all-electrical skyrmion detection is feasible in two-dimensional vdW magnets via scanning tunneling microscopy (STM) and in planar tunnel junctions. We use the nonequilibrium Green's function method for quantum transport in planar junctions, including self-energy due to electrodes and working conditions, going beyond the standard Tersoff-Hamann approximation. We obtain a very large tunneling anisotropic magnetoresistance (TAMR) around the Fermi energy for a graphite/Fe3GeTe2/germanene/graphite vdW tunnel junction. For atomic-scale skyrmions, the noncollinear magnetoresistance (NCMR) reaches giant values. We trace the origin of the NCMR to spin mixing between spin-up and -down states of pz and dz2 character at the surface atoms. Both TAMR and NCMR are drastically enhanced in tunnel junctions with respect to STM geometry due to orbital symmetry matching at the interface.

Towards graphene-based asymmetric diodes: a density functional tight-binding study

Self-consistent charge density functional tight-binding (DFTB) calculations have been performed to investigate the electrical properties and transport behavior of asymmetric graphene devices (AGDs). Three different nanodevices constructed of different necks of 8 nm, 6 nm and 4 nm, named Graphene-N8, Graphene-N6 and Graphene-N4, respectively, have been proposed. All devices have been tested under two conditions of zero gate voltage and an applied gate voltage of +20 V using a dielectric medium of 3.9 epsilon interposed between the graphene and the metallic gate. As expected, the results of AGD diodes exhibited strong asymmetric I(V) characteristic curves in good agreement with the available experimental data. Our predictions implied that Graphene-N4 would achieve great asymmetry (A) of 1.40 at |VDS| = 0.2 V with maximum transmittance (T) of 6.72 in the energy range 1.30 eV. More importantly, while the A of Graphene-N4 was slightly changed by applying the gate voltage, Graphene-N6/Graphene-N8 showed a significant effect with their A increased from 1.20/1.03 under no gate voltage (NGV) to 1.30/1.16 under gate voltage (WGV) conditions. Our results open up unprecedented numerical prospects for designing tailored geometric diodes.

MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation

MoS2-based field-effect transistors (FETs) and, in general, transition metal dichalcogenide channels are fundamentally limited by high contact resistance (RC) and intrinsic defects, which results in low drive current and lower carrier mobilities, respectively. This work addresses these issues using a technique based on CF4 plasma treatment in the contacts and further cyclic field-assisted drift and activation of the fluorine ions (F-), which get introduced into the contact region during the CF4 plasma treatment. The F- ions are activated using cyclic pulses applied across the source-drain (S/D) contacts, which leads to their migration to the contact edges via the channel. Further, using ab initio molecular dynamics and density functional theory simulations, these F- ions are found to bond at sulfur (S) vacancies, resulting in their passivation and n-type doping in the channel and near the S/D contacts. An increase in doping results in the narrowing of the Schottky barrier width and a reduction in RC by ∼90%. Additionally, the passivation of S vacancies in the channel enhances the mobility of the FET by ∼150%. The CF4 plasma treatment in contacts and further cyclic field-assisted activation of F- ions resulted in an ON-current (ION) improvement by ∼90% and ∼480% for exfoliated and CVD-grown MoS2, respectively. Moreover, this improvement in ION has been achieved without any deterioration in the ION/IOFF, which was found to be >7-8 orders.

Influence of temperature on bandgap shifts, optical properties and photovoltaic parameters of GaAs/AlAs and GaAs/AlSbp-nheterojunctions: insights fromab-initioDFT + NEGF studies

The III-V group semiconductors are highly promising absorbers for heterojunctions based solar cell devices due to their high conversion efficiency. In this work, we explore the solar cell properties and the role of electron-phonon coupling (EPC) on the solar cell parameters of GaAs/AlSb and GaAs/AlAsp-nheterojunctions using non-equilibrium Green function method (NEGF) in combination ofab-initiodensity functional theory (DFT). In addition, the band offsets at the heterointerfaces, optical absorption and bandgap shifts (BGSs) due to temperature are estimated using DFT + NEGF approach. The interface band gaps in heterostructures are found to be lower than bulk band gaps leading to a shift in optical absorption coefficient towards lower energy side that results in stronger photocurrent. The temperature dependent electronic BGS is significantly influenced by the phonon density and phonon energy via EPC. The phonon influenced BGS is found to change the optical absorption, photocurrent density and open-circuit voltage. In case of GaAs/AlSb junction, the interface phonons are found to have significantly higher energies as compared to the bulk phonons and thereby may have important implications for photovoltaic (PV) properties. Overall, the present study reveals the influence of EPC on the optical absorption and PV properties of GaAs/AlSb and GaAs/AlSbp-nheterojunctions. Furthermore, the study shows that the DFT + NEGF method can be successfully used to obtain the reasonable quantitative estimates of temperature dependent BGSs, optical absorption and PV properties ofp-nheterojunctions.

Design and Simulation of Tunneling Diodes with 2D Insulators for Rectenna Switches

Rectenna is the key component in radio-frequency circuits for receiving and converting electromagnetic waves into direct current. However, it is very challenging for the conventional semiconductor diode switches to rectify high-frequency signals for 6G telecommunication (>100 GHz), medical detection (>THz), and rectenna solar cells (optical frequencies). Such a major challenge can be resolved by replacing the conventional semiconductor diodes with tunneling diodes as the rectenna switches. In this work, metal-insulator-metal (MIM) tunneling diodes based on 2D insulating materials were designed, and their performance was evaluated using a comprehensive simulation approach which includes a density-function theory simulation of 2D insulator materials, the modeling of the electrical characteristics of tunneling diodes, and circuit simulation for rectifiers. It is found that novel 2D insulators such as monolayer TiO2 can be obtained by oxidizing sulfur-metal layered materials. The MIM diodes based on such insulators exhibit fast tunneling and excellent current rectifying properties. Such tunneling diodes effectively convert the received high-frequency electromagnetic waves into direct current.

Uniaxial Strain-Induced Stacking Order Change in Trilayer Graphene

The layer stacking order in two-dimensional heterostructures, like graphene, affects their physical properties and potential applications. Trilayer graphene, specifically ABC-trilayer graphene, has captured significant interest due to its potential for correlated electronic states. However, achieving a stable ABC arrangement is challenging due to its lower thermodynamic stability compared to the more stable ABA stacking. Despite recent advancements in obtaining ABC graphene through external perturbations, such as strain, the stacking transition mechanism remains insufficiently explored. In this study, we unveil a universal mechanism to achieve ABC stacking, applicable for understanding ABA to ABC stacking changes induced by any mechanical perturbations. Our approach is based on a novel strain engineering technique that induces interlayer slippage and results in the formation of stable ABC domains. We investigate the underlying interfacial mechanisms of this stacking change through computational simulations and experiments. Our findings demonstrate a highly anisotropic and significant transformation of ABA stacking to large and stable ABC domains facilitated by interlayer slippage. Through atomistic simulations and local energy analysis, we systematically demonstrate the mechanism for this stacking transition, that is dependent on specific loading orientation. Understanding such a mechanism allows this material system to be engineered by design compatible with industrial techniques on a device-by-device level. We conduct Raman studies to validate and characterize the formed ABC stacking, highlighting its distinct features compared to the ABA region. Our results contribute to a clearer understanding of the stacking change mechanism and provide a robust and controllable method for achieving stable ABC domains, facilitating their use in developing advanced optoelectronic devices.

Strong In-Plane Magnetization and Spin Polarization in (Co0.15Fe0.85)5GeTe2/Graphene van der Waals Heterostructure Spin-Valve at Room Temperature

Van der Waals (vdW) magnets are promising, because of their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, so far, most of the vdW magnet-based spintronic devices have been limited to cryogenic temperatures with magnetic anisotropies favoring out-of-plane or canted orientation of the magnetization. Here, we report beyond room-temperature lateral spin-valve devices with strong in-plane magnetization and spin polarization of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Density functional theory (DFT) calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Magnetization measurements reveal the above room-temperature ferromagnetism in CFGT and clear remanence at room temperature. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices, such as efficient spin injection and detection. Further analysis of spin transport and Hanle spin precession measurements reveals a strong in-plane magnetization with negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus revealing its potential application in spintronic technologies.

Surface-enhanced Raman database of 24 metabolites: Stable measurement of spectra, extraction and analysis of the main features

Surface-enhanced Raman spectroscopy (SERS) has been used in Raman-based metabolomics to provide abundant molecular fingerprint information in situ with extremely high sensitivity, without damaging the sample. However, poor reproducibility, caused by the randomness of the adsorption sites, and the short-range effect of SERS have hindered the development of SERS in metabolomics, resulting in very few SERS reference databases for small-molecule metabolites. In this work, our previously proposed large laser spot-swift mapping SERS method was adopted for the measurement of 24 commercially available metabolite standards, to provide reproducible and reliable references for Raman-based metabolomics study. Among these 24 metabolites, 22 contained no Raman data in PubChem. Other than the SERS spectra data, we extracted and explained the molecular vibration information of these metabolites, and combined with the density functional theory (DFT) calculations, we provided a new possibility for the fast Raman recognition of small-molecule metabolites. Accordingly, a large laser spot-swift mapping SERS database of metabolites in human serum was initially established, which contained not only the original spectral data but also other detailed feature information regarding the Raman peaks. With continuous accumulation, this database could play a promising role in Raman-based metabolomics and other Raman-related research.

Metal (Ni, Pd, and Pt)-Doped BS Monolayers as a Gas Sensor upon Vented Gases in Lithium-Ion Batteries: A First-Principles Study

Real-time monitoring of the vented gases emitted by the thermal runaway of lithium-ion batteries (LIBs) is of great significance to the normal use of LIBs. We study systematically the adsorption and sensing performances of pristine and metal-doped BS monolayers to five typical gases (CO, CO2, CH4, C2H2, and C2H4) emitted from LIBs employing the first-principles method. The adsorption structure and energetics, charge transfer, band structure, density of states, sensitivity, and recovery time are simulated and analyzed. Outstanding sensing properties are predicted for the Ni-, Pd-, and Pt-doped BS monolayers, although their recently synthesized pristine counterpart shows little sensing potential for those gases. The magnitude of the adsorption energy increases from 0.249 eV to 2.32 eV (Ni-BS), 1.954 eV(Pd-BS), and 2.994 eV (Pt-BS) for the CO gas after doping. Besides, significant variation of band gap is observed after gas adsorption in doped BS nanosheets, which leads to huge theoretical values of the sensitivity. The sensitivity for CO, CO2, CH4, C2H2, and C2H4 on Pt-BS may reach up to 5.87 × 105, 1.57 × 106, 1.81 × 105, 8.33 × 104, and 8.18 × 103, respectively. In addition, the calculated recovery times indicate that the doped BS monolayers have strong selectivity for the adsorption and detection of these five gases. The three metal-doped BS monolayers should have great potential for application in sensors monitoring the gases emitted from LIBs.

Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics

Precise control of the conductivity of layered ferroelectric semiconductors is required to make these materials suitable for advanced transistor, memory and logic circuits. Although proof-of-principle devices based on layered ferroelectrics have been demonstrated, it remains unclear how the polarization inversion induces conductivity changes. Therefore, function design and performance optimization remain cumbersome. Here we combine ab initio calculations with transport experiments to unveil the mechanism underlying the polarization-dependent conductivity in ferroelectric channel field-effect transistors. We find that the built-in electric field gives rise to an asymmetric conducting route formed by the hidden Stark effect and competes with the potential redistribution caused by the external field of the gate. Furthermore, leveraging our mechanistic findings, we control the conductivity threshold in α-In2Se3 ferroelectric channel field-effect transistors. We demonstrate logic-in-memory functionality through the implementation of electrically self-switchable primary (AND, OR) and composite (XOR, NOR, NAND) logic gates. Our work provides mechanistic insights into conductivity modulation in a broad class of layered ferroelectrics, providing foundations for their application in logic and memory electronics.

Interfacial Properties of Anisotropic Monolayer SiAs Transistors

The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiAs field-effect transistors are comprehensively studied with electrodes (graphene, V2CO2, Au, Ag, and Cu) by using ab initio electronic structure calculations and quantum transport simulation. It is found that ML SiAs forms a weak van der Waals interaction with graphene and V2CO2, while it forms a strong interaction with bulk metals (Au, Ag, and Cu). Although ML SiAs has strong anisotropy, it is not reflected in the contact property. Based on the quantum transport simulation, ML SiAs forms n-type lateral Schottky contact with Au, Ag, and Cu electrodes with the Schottky barrier height (SBH) of 0.28 (0.27), 0.40 (0.47), and 0.45 (0.33) eV along the a (b) direction, respectively, while it forms p-type lateral Schottky contact with a graphene electrode with a SBH of 0.34 (0.28) eV. Fortunately, ML SiAs forms an ideal Ohmic contact with the V2CO2 electrode. This study not only gives a deep understanding of the interfacial properties of ML SiAs with electrodes but also provides a guide for the design of ML SiAs devices.