1
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Kumar AM, Yagodkin D, Rosati R, Bock DJ, Schattauer C, Tobisch S, Hagel J, Höfer B, Kirchhof JN, Hernández López P, Burfeindt K, Heeg S, Gahl C, Libisch F, Malic E, Bolotin KI. Strain fingerprinting of exciton valley character in 2D semiconductors. Nat Commun 2024; 15:7546. [PMID: 39214968 PMCID: PMC11364664 DOI: 10.1038/s41467-024-51195-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Accepted: 07/30/2024] [Indexed: 09/04/2024] Open
Abstract
Intervalley excitons with electron and hole wavefunctions residing in different valleys determine the long-range transport and dynamics observed in many semiconductors. However, these excitons with vanishing oscillator strength do not directly couple to light and, hence, remain largely unstudied. Here, we develop a simple nanomechanical technique to control the energy hierarchy of valleys via their contrasting response to mechanical strain. We use our technique to discover previously inaccessible intervalley excitons associated with K, Γ, or Q valleys in prototypical 2D semiconductors WSe2 and WS2. We also demonstrate a new brightening mechanism, rendering an otherwise "dark" intervalley exciton visible via strain-controlled hybridization with an intravalley exciton. Moreover, we classify various localized excitons from their distinct strain response and achieve large tuning of their energy. Overall, our valley engineering approach establishes a new way to identify intervalley excitons and control their interactions in a diverse class of 2D systems.
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Affiliation(s)
- Abhijeet M Kumar
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Denis Yagodkin
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Roberto Rosati
- Philipps-Universität Marburg, Mainzer Gasse 33, Marburg, Germany
| | - Douglas J Bock
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Christoph Schattauer
- Institute for Theoretical Physics, TU Wien, Wiedner Hauptstraße 8-10, Vienna, Austria
| | - Sarah Tobisch
- Institute for Theoretical Physics, TU Wien, Wiedner Hauptstraße 8-10, Vienna, Austria
| | - Joakim Hagel
- Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Gothenburg, Sweden
| | - Bianca Höfer
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Jan N Kirchhof
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Delft, The Netherlands
| | - Pablo Hernández López
- Institute for Physics and IRIS Adlershof, Humboldt-Universität Berlin, Newtonstraße 15, Berlin, Germany
| | - Kenneth Burfeindt
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Sebastian Heeg
- Institute for Physics and IRIS Adlershof, Humboldt-Universität Berlin, Newtonstraße 15, Berlin, Germany
| | - Cornelius Gahl
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Florian Libisch
- Institute for Theoretical Physics, TU Wien, Wiedner Hauptstraße 8-10, Vienna, Austria
| | - Ermin Malic
- Philipps-Universität Marburg, Mainzer Gasse 33, Marburg, Germany
| | - Kirill I Bolotin
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany.
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2
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Blundo E, Polimeni A. Alice (and Bob) in Flatland. NANO LETTERS 2024; 24:9777-9783. [PMID: 39088739 DOI: 10.1021/acs.nanolett.4c02702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2024]
Abstract
2D quantum materials have opened infinite doors, hosting intriguing phenomena and featuring incredible engineering potential. Whether these qualities can boost the use of 2D crystals for quantum applications remains an open field with yet unexplored paths.
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Affiliation(s)
- Elena Blundo
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Antonio Polimeni
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
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3
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Adinehloo D, Hendrickson JR, Perebeinos V. Wetting and strain engineering of 2D materials on nanopatterned substrates. NANOSCALE ADVANCES 2024; 6:2823-2829. [PMID: 38817431 PMCID: PMC11134232 DOI: 10.1039/d3na01079a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Accepted: 03/31/2024] [Indexed: 06/01/2024]
Abstract
The fascinating realm of strain engineering and wetting transitions in two-dimensional (2D) materials takes place when placed on a two-dimensional array of nanopillars or one-dimensional rectangular grated substrates. Our investigation encompasses a diverse set of atomically thin 2D materials, including transition metal dichalcogenides, hexagonal boron nitride, and graphene, with a keen focus on the impact of van der Waals adhesion energies to the substrate on the wetting/dewetting behavior on nanopatterned substrates. We find a critical aspect ratio of the nanopillar or grating heights to the period of the pattern when the wetting/dewetting transition occurs. Furthermore, energy hysteresis analysis reveals dynamic detachment and re-engagement events during height adjustments, shedding light on energy barriers of 2D monolayer transferred on patterned substrates. Our findings offer avenues for strain engineering in 2D materials, leading to promising prospects for future technological applications.
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Affiliation(s)
- Davoud Adinehloo
- Department of Electrical Engineering, University at Buffalo Buffalo NY 14228 USA
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory Wright-Patterson AFB Ohio 45433 USA
| | - Vasili Perebeinos
- Department of Electrical Engineering, University at Buffalo Buffalo NY 14228 USA
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4
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Lee SJ, So JP, Kim RM, Kim KH, Rha HH, Na G, Han JH, Jeong KY, Nam KT, Park HG. Spin angular momentum-encoded single-photon emitters in a chiral nanoparticle-coupled WSe 2 monolayer. SCIENCE ADVANCES 2024; 10:eadn7210. [PMID: 38787944 PMCID: PMC11122662 DOI: 10.1126/sciadv.adn7210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2023] [Accepted: 04/23/2024] [Indexed: 05/26/2024]
Abstract
Spin angular momentum (SAM)-encoded single-photon emitters, also known as circularly polarized single photons, are basic building blocks for the advancement of chiral quantum optics and cryptography. Despite substantial efforts such as coupling quantum emitters to grating-like optical metasurfaces and applying intense magnetic fields, it remains challenging to generate circularly polarized single photons from a subwavelength-scale nanostructure in the absence of a magnetic field. Here, we demonstrate single-photon emitters encoded with SAM in a strained WSe2 monolayer coupled with chiral plasmonic gold nanoparticles. Single-photon emissions were observed at the nanoparticle position, exhibiting photon antibunching behavior with a g(2)(0) value of ~0.3 and circular polarization properties with a slight preference for left-circular polarization. Specifically, the measured Stokes parameters confirmed strong circular polarization characteristics, in contrast to emitters coupled with achiral gold nanocubes. Therefore, this work provides potential insights to make SAM-encoded single-photon emitters and understand the interaction of plasmonic dipoles and single photons, facilitating the development of chiral quantum optics.
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Affiliation(s)
- Soon-Jae Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Jae-Pil So
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Ryeong Myeong Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Kyoung-Ho Kim
- Department of Physics, Chungbuk National University, Cheongju 28644, Republic of Korea
| | - Hyun-Ho Rha
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Gunwoo Na
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Jeong Hyun Han
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Kwang-Yong Jeong
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Ki Tae Nam
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
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5
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Zhang C, Gong Z, He D, Yan Y, Li S, Zhao K, Wang J, Wang Y, Zhang X. Research Progress of Single-Photon Emitters Based on Two-Dimensional Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:918. [PMID: 38869543 PMCID: PMC11173489 DOI: 10.3390/nano14110918] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2024] [Revised: 05/21/2024] [Accepted: 05/21/2024] [Indexed: 06/14/2024]
Abstract
From quantum communications to quantum computing, single-photon emitters (SPEs) are essential components of numerous quantum technologies. Two-dimensional (2D) materials have especially been found to be highly attractive for the research into nanoscale light-matter interactions. In particular, localized photonic states at their surfaces have attracted great attention due to their enormous potential applications in quantum optics. Recently, SPEs have been achieved in various 2D materials, while the challenges still remain. This paper reviews the recent research progress on these SPEs based on various 2D materials, such as transition metal dichalcogenides (TMDs), hexagonal boron nitride (hBN), and twisted-angle 2D materials. Additionally, we summarized the strategies to create, position, enhance, and tune the emission wavelength of these emitters by introducing external fields into these 2D system. For example, pronounced enhancement of the SPEs' properties can be achieved by coupling with external fields, such as the plasmonic field, and by locating in optical microcavities. Finally, this paper also discusses current challenges and offers perspectives that could further stimulate scientific research in this field. These emitters, due to their unique physical properties and integration potential, are highly appealing for applications in quantum information and communication, as well as other physical and technological fields.
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Affiliation(s)
| | | | | | | | | | | | | | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China; (C.Z.); (Z.G.); (D.H.); (Y.Y.); (S.L.); (K.Z.); (J.W.)
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China; (C.Z.); (Z.G.); (D.H.); (Y.Y.); (S.L.); (K.Z.); (J.W.)
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6
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Fang N, Chang YR, Fujii S, Yamashita D, Maruyama M, Gao Y, Fong CF, Kozawa D, Otsuka K, Nagashio K, Okada S, Kato YK. Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures. Nat Commun 2024; 15:2871. [PMID: 38605019 PMCID: PMC11009238 DOI: 10.1038/s41467-024-47099-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 03/19/2024] [Indexed: 04/13/2024] Open
Abstract
The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical properties at low temperatures. Here we report on room-temperature observation of interface excitons in mixed-dimensional heterostructures consisting of two-dimensional tungsten diselenide and one-dimensional carbon nanotubes. Bright emission peaks originating from the interface are identified, spanning a broad energy range within the telecommunication wavelengths. The effect of band alignment is investigated by systematically varying the nanotube bandgap, and we assign the new peaks to interface excitons as they only appear in type-II heterostructures. Room-temperature localization of low-energy interface excitons is indicated by extended lifetimes as well as small excitation saturation powers, and photon correlation measurements confirm antibunching. With mixed-dimensional van der Waals heterostructures where band alignment can be engineered, new opportunities for quantum photonics are envisioned.
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Affiliation(s)
- N Fang
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan.
| | - Y R Chang
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan
| | - S Fujii
- Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama, Japan
- Department of Physics, Keio University, Yokohama, Japan
| | - D Yamashita
- Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama, Japan
- Platform Photonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan
| | - M Maruyama
- Department of Physics, University of Tsukuba, Ibaraki, Japan
| | - Y Gao
- Department of Physics, University of Tsukuba, Ibaraki, Japan
| | - C F Fong
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan
| | - D Kozawa
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan
- Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama, Japan
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki, Japan
| | - K Otsuka
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan
- Department of Mechanical Engineering, The University of Tokyo, Tokyo, Japan
| | - K Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo, Japan
| | - S Okada
- Department of Physics, University of Tsukuba, Ibaraki, Japan
| | - Y K Kato
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan.
- Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama, Japan.
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7
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Krumland J, Velja S, Cocchi C. Quantum Dots in Transition Metal Dichalcogenides Induced by Atomic-Scale Deformations. ACS PHOTONICS 2024; 11:586-595. [PMID: 38405397 PMCID: PMC10885200 DOI: 10.1021/acsphotonics.3c01470] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Revised: 12/20/2023] [Accepted: 12/20/2023] [Indexed: 02/27/2024]
Abstract
Single-photon emission from monolayer transition metal dichalcogenides requires the existence of localized, atom-like states within the extended material. Here, we predict from first-principles the existence of quantum dots around atomic-scale protrusions, which result from substrate roughness or particles trapped between layers. Using density functional theory, we find such deformations to give rise to local membrane stretching and curvature, which lead to the emergence of gap states. Having enhanced outer-surface localization, they are prone to mixing with states pertaining to chalcogen vacancies and adsorbates. If the deformation is sharp, the conduction band minimum furthermore assumes atomic and valley-mixed character, potentially enabling quantum light emission. When such structural defects are arranged in an array, the new states couple to form energetically separated sub-bands, holding promise for intriguing superlattice dynamics. All of the observed features are shown to be closely linked to elastic, deformation-induced intra- and intervalley scattering processes.
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Affiliation(s)
- Jannis Krumland
- Institute
of Physics, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
- Physics
Department and IRIS Adlershof, Humboldt-Universität
zu Berlin, 12489 Berlin, Germany
| | - Stefan Velja
- Institute
of Physics, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
| | - Caterina Cocchi
- Institute
of Physics, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
- Physics
Department and IRIS Adlershof, Humboldt-Universität
zu Berlin, 12489 Berlin, Germany
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8
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Naumis GG, Herrera SA, Poudel SP, Nakamura H, Barraza-Lopez S. Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:016502. [PMID: 37879327 DOI: 10.1088/1361-6633/ad06db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
This is an update of a previous review (Naumiset al2017Rep. Prog. Phys.80096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation (P) in graphene, (ii) time-dependent strain and its impact on graphene's electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisationPon hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic (σ), electric (P) and magnetic (M) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI2. The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.
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Affiliation(s)
- Gerardo G Naumis
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Saúl A Herrera
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Shiva P Poudel
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Hiro Nakamura
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Salvador Barraza-Lopez
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
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9
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Zhao H, Ma Y, Gao Z, Liu N, Wu T, Wu S, Feng X, Hone J, Strauf S, Feng L. High-Purity Generation and Switching of Twisted Single Photons. PHYSICAL REVIEW LETTERS 2023; 131:183801. [PMID: 37977645 DOI: 10.1103/physrevlett.131.183801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Accepted: 10/05/2023] [Indexed: 11/19/2023]
Abstract
Quantum technologies, if scaled into a high-dimensional Hilbert space, can dramatically enhance connection capabilities with supporting higher bit rates and ultrasecure information transfer. Twisted single photons, carrying orbital angular momentum (OAM) as an unbounded dimension, could address the growing demand for high-dimensional quantum information encoding and transmission. By hybrid integration of two-dimensional semiconductor WSe_{2} with a spin-orbit-coupled microring resonator, we demonstrate an integrated tunable twisted single photon source with the ability to precisely define and switch between highly pure spin-OAM states. Our results feature a single photon purity of g^{(2)}(0)∼0.13 with a cavity-enhanced quantum yield of 76% and a high OAM mode purity up to 96.9%. Moreover, the demonstrated quantum-chiral control can also enable new quantum functionality such as single photon routing for efficient quantum information processing on chip.
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Affiliation(s)
- Haoqi Zhao
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Yichen Ma
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
| | - Zihe Gao
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Na Liu
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
| | - Tianwei Wu
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Shuang Wu
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Xilin Feng
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | - Stefan Strauf
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
| | - Liang Feng
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
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10
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Aftab S, Hussain S, Al-Kahtani AA. Latest Innovations in 2D Flexible Nanoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301280. [PMID: 37104492 DOI: 10.1002/adma.202301280] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Revised: 03/30/2023] [Indexed: 06/19/2023]
Abstract
2D materials with dangling-bond-free surfaces and atomically thin layers have been shown to be capable of being incorporated into flexible electronic devices. The electronic and optical properties of 2D materials can be tuned or controlled in other ways by using the intriguing strain engineering method. The latest and encouraging techniques in regard to creating flexible 2D nanoelectronics are condensed in this review. These techniques have the potential to be used in a wider range of applications in the near and long term. It is possible to use ultrathin 2D materials (graphene, BP, WTe2 , VSe2 etc.) and 2D transition metal dichalcogenides (2D TMDs) in order to enable the electrical behavior of the devices to be studied. A category of materials is produced on smaller scales by exfoliating bulk materials, whereas chemical vapor deposition (CVD) and epitaxial growth are employed on larger scales. This overview highlights two distinct requirements, which include from a single semiconductor or with van der Waals heterostructures of various nanomaterials. They include where strain must be avoided and where it is required, such as solutions to produce strain-insensitive devices, and such as pressure-sensitive outcomes, respectively. Finally, points-of-view about the current difficulties and possibilities in regard to using 2D materials in flexible electronics are provided.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South Korea
| | - Abdullah A Al-Kahtani
- Chemistry Department, Collage of Science, King Saud University, P. O. Box 2455, Riyadh, 11451, Saudi Arabia
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11
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Cai H, Rasmita A, Tan Q, Lai JM, He R, Cai X, Zhao Y, Chen D, Wang N, Mu Z, Huang Z, Zhang Z, Eng JJH, Liu Y, She Y, Pan N, Miao Y, Wang X, Liu X, Zhang J, Gao W. Interlayer donor-acceptor pair excitons in MoSe 2/WSe 2 moiré heterobilayer. Nat Commun 2023; 14:5766. [PMID: 37723156 PMCID: PMC10507070 DOI: 10.1038/s41467-023-41330-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Accepted: 08/31/2023] [Indexed: 09/20/2023] Open
Abstract
Localized interlayer excitons (LIXs) in two-dimensional moiré superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. However, the fundamental nature of these LIXs is still elusive. Here, we show the donor-acceptor pair (DAP) mechanism as one of the origins of these excitonic peaks. Numerical simulation results of the DAP model agree with the experimental photoluminescence spectra of LIX in the moiré MoSe2/WSe2 heterobilayer. In particular, we find that the emission energy-lifetime correlation and the nonmonotonic power dependence of the lifetime agree well with the DAP IX model. Our results provide insight into the physical mechanism of LIX formation in moiré heterostructures and pave new directions for engineering interlayer exciton properties in moiré superlattices.
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Affiliation(s)
- Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore
| | - Abdullah Rasmita
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Qinghai Tan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jia-Min Lai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruihua He
- School of Biological Sciences, Nanyang Technological University, Singapore, 637551, Singapore
| | - Xiangbin Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Yan Zhao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Disheng Chen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zhao Mu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zumeng Huang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - John J H Eng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, Singapore
| | - Yuanda Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore
| | - Yongzhi She
- Department of Physics, University of Science and Technology of China, Hefei Anhui, 230026, China
| | - Nan Pan
- Department of Physics, University of Science and Technology of China, Hefei Anhui, 230026, China
| | - Yansong Miao
- School of Biological Sciences, Nanyang Technological University, Singapore, 637551, Singapore
| | - Xiaoping Wang
- Department of Physics, University of Science and Technology of China, Hefei Anhui, 230026, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore.
- Centre for Quantum Technologies, National University of Singapore, Singapore, Singapore.
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12
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Abramov AN, Chestnov IY, Alimova ES, Ivanova T, Mukhin IS, Krizhanovskii DN, Shelykh IA, Iorsh IV, Kravtsov V. Photoluminescence imaging of single photon emitters within nanoscale strain profiles in monolayer WSe 2. Nat Commun 2023; 14:5737. [PMID: 37714836 PMCID: PMC10504242 DOI: 10.1038/s41467-023-41292-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Accepted: 08/29/2023] [Indexed: 09/17/2023] Open
Abstract
Local deformation of atomically thin van der Waals materials provides a powerful approach to create site-controlled chip-compatible single-photon emitters (SPEs). However, the microscopic mechanisms underlying the formation of such strain-induced SPEs are still not fully clear, which hinders further efforts in their deterministic integration with nanophotonic structures for developing practical on-chip sources of quantum light. Here we investigate SPEs with single-photon purity up to 98% created in monolayer WSe2 via nanoindentation. Using photoluminescence imaging in combination with atomic force microscopy, we locate single-photon emitting sites on a deep sub-wavelength spatial scale and reconstruct the details of the surrounding local strain potential. The obtained results suggest that the origin of the observed single-photon emission is likely related to strain-induced spectral shift of dark excitonic states and their hybridization with localized states of individual defects.
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Affiliation(s)
- Artem N Abramov
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
| | - Igor Y Chestnov
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
| | - Ekaterina S Alimova
- Peter The Great St. Petersburg Polytechnic University, Saint Petersburg, 195251, Russia
| | - Tatiana Ivanova
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
| | - Ivan S Mukhin
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
- St. Petersburg Academic University, Saint Petersburg, 194021, Russia
| | | | - Ivan A Shelykh
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
- Science Institute, University of Iceland, Dunhagi-3, IS-107, Reykjavik, Iceland
- Abrikosov Center for Theoretical Physics, MIPT, Dolgoprudnyi, Moscow Region, 141701, Russia
- Russian Quantum Center, Skolkovo, Moscow, 143025, Russia
| | - Ivan V Iorsh
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia
- Abrikosov Center for Theoretical Physics, MIPT, Dolgoprudnyi, Moscow Region, 141701, Russia
- Russian Quantum Center, Skolkovo, Moscow, 143025, Russia
| | - Vasily Kravtsov
- School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia.
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13
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Ripin A, Peng R, Zhang X, Chakravarthi S, He M, Xu X, Fu KM, Cao T, Li M. Tunable phononic coupling in excitonic quantum emitters. NATURE NANOTECHNOLOGY 2023; 18:1020-1026. [PMID: 37264087 DOI: 10.1038/s41565-023-01410-6] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Accepted: 04/28/2023] [Indexed: 06/03/2023]
Abstract
Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. An outstanding case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here we report the deterministic creation of quantum emitters featuring highly tunable coupling between excitons and phonons. The quantum emitters are formed in strain-induced quantum dots created in homobilayer WSe2. The colocalization of quantum-confined interlayer excitons and terahertz interlayer breathing-mode phonons, which directly modulates the exciton energy, leads to a uniquely strong phonon coupling to single-photon emission, with a Huang-Rhys factor reaching up to 6.3. The single-photon spectrum of interlayer exciton emission features a single-photon purity >83% and multiple phonon replicas, each heralding the creation of a phonon Fock state in the quantum emitter. Due to the vertical dipole moment of the interlayer exciton, the phonon-photon interaction is electrically tunable to be higher than the exciton and phonon decoherence rate, and hence promises to reach the strong-coupling regime. Our result demonstrates a solid-state quantum excitonic-optomechanical system at the atomic interface of the WSe2 bilayer that emits flying photonic qubits coupled with stationary phonons, which could be exploited for quantum transduction and interconnection.
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Affiliation(s)
- Adina Ripin
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Ruoming Peng
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA.
| | - Xiaowei Zhang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | | | - Minhao He
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Kai-Mei Fu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, WA, USA
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Mo Li
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA.
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14
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Guo S, Germanis S, Taniguchi T, Watanabe K, Withers F, Luxmoore IJ. Electrically Driven Site-Controlled Single Photon Source. ACS PHOTONICS 2023; 10:2549-2555. [PMID: 37602287 PMCID: PMC10436352 DOI: 10.1021/acsphotonics.3c00097] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Indexed: 08/22/2023]
Abstract
Single photon sources are fundamental building blocks for quantum communication and computing technologies. In this work, we present a device geometry consisting of gold pillars embedded in a van der Waals heterostructure of graphene, hexagonal boron nitride, and tungsten diselenide. The gold pillars serve to both generate strain and inject charge carriers, allowing us to simultaneously demonstrate the positional control and electrical pumping of a single photon emitter. Moreover, increasing the thickness of the hexagonal boron nitride tunnel barriers restricts electroluminescence but enables electrical control of the emission energy of the site-controlled single photon emitters, with measured energy shifts reaching 40 meV.
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Affiliation(s)
- Shi Guo
- Department
of Physics and Astronomy, University of
Exeter, Exeter EX4 4QL, United
Kingdom
| | - Savvas Germanis
- Department
of Engineering, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Freddie Withers
- Department
of Physics and Astronomy, University of
Exeter, Exeter EX4 4QL, United
Kingdom
| | - Isaac J. Luxmoore
- Department
of Engineering, University of Exeter, Exeter EX4 4QF, United Kingdom
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15
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Yang L, Yuan Y, Fu B, Yang J, Dai D, Shi S, Yan S, Zhu R, Han X, Li H, Zuo Z, Wang C, Huang Y, Jin K, Gong Q, Xu X. Revealing broken valley symmetry of quantum emitters in WSe 2 with chiral nanocavities. Nat Commun 2023; 14:4265. [PMID: 37460549 DOI: 10.1038/s41467-023-39972-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2023] [Accepted: 07/05/2023] [Indexed: 07/20/2023] Open
Abstract
Single photon emission of quantum emitters (QEs) carrying internal degrees of freedom such as spin and angular momentum plays an important role in quantum optics. Recently, QEs in two-dimensional semiconductors have attracted great interest as promising quantum light sources. However, whether those QEs are characterized by the same valley physics as delocalized valley excitons is still under debate. Moreover, the potential applications of such QEs still need to be explored. Here we show experimental evidence of valley symmetry breaking for neutral QEs in WSe2 monolayer by interacting with chiral plasmonic nanocavities. The anomalous magneto-optical behaviour of the coupled QEs suggests that the polarization state of emitted photon is modulated by the chiral nanocavity instead of the valley-dependent optical selection rules. Calculations of cavity quantum electrodynamics further show the absence of intrinsic valley polarization. The cavity-dependent circularly polarized single-photon output also offers a strategy for future applications in chiral quantum optics.
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Affiliation(s)
- Longlong Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yu Yuan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bowen Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Jingnan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Danjie Dai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shushu Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sai Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Rui Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Hancong Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Zhanchun Zuo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China.
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
| | - Xiulai Xu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China.
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16
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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17
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Zhang D, Zhai D, Deng S, Yao W, Zhu Q. Single Photon Emitters with Polarization and Orbital Angular Momentum Locking in Monolayer Semiconductors. NANO LETTERS 2023; 23:3851-3857. [PMID: 37104699 DOI: 10.1021/acs.nanolett.3c00459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Excitons in monolayer transition metal dichalcogenide are endowed with intrinsic valley-orbit coupling between their center-of-mass motion and valley pseudospin. When trapped in a confinement potential, e.g., generated by strain field, we find that intralayer excitons are valley and orbital angular momentum (OAM) entangled. By tuning the trap profile and external magnetic field, one can engineer the exciton states at the ground state and realize a series of valley-OAM entangled states. We further show that the OAM of excitons can be transferred to emitted photons, and these novel exciton states can naturally serve as polarization-OAM locked single photon emitters, which under certain circumstance become polarization-OAM entangled, highly tunable by strain trap and magnetic field. Our proposal demonstrates a novel scheme to generate polarization-OAM locked/entangled photons at the nanoscale with a high degree of integrability and tunability, pointing to exciting opportunities for quantum information applications.
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Affiliation(s)
- Di Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China
| | - Dawei Zhai
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Sha Deng
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China
| | - Wang Yao
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Qizhong Zhu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China
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18
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Utama MIB, Zeng H, Sadhukhan T, Dasgupta A, Gavin SC, Ananth R, Lebedev D, Wang W, Chen JS, Watanabe K, Taniguchi T, Marks TJ, Ma X, Weiss EA, Schatz GC, Stern NP, Hersam MC. Chemomechanical modification of quantum emission in monolayer WSe 2. Nat Commun 2023; 14:2193. [PMID: 37069140 PMCID: PMC10110606 DOI: 10.1038/s41467-023-37892-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2023] [Accepted: 04/04/2023] [Indexed: 04/19/2023] Open
Abstract
Two-dimensional (2D) materials have attracted attention for quantum information science due to their ability to host single-photon emitters (SPEs). Although the properties of atomically thin materials are highly sensitive to surface modification, chemical functionalization remains unexplored in the design and control of 2D material SPEs. Here, we report a chemomechanical approach to modify SPEs in monolayer WSe2 through the synergistic combination of localized mechanical strain and noncovalent surface functionalization with aryl diazonium chemistry. Following the deposition of an aryl oligomer adlayer, the spectrally complex defect-related emission of strained monolayer WSe2 is simplified into spectrally isolated SPEs with high single-photon purity. Density functional theory calculations reveal energetic alignment between WSe2 defect states and adsorbed aryl oligomer energy levels, thus providing insight into the observed chemomechanically modified quantum emission. By revealing conditions under which chemical functionalization tunes SPEs, this work broadens the parameter space for controlling quantum emission in 2D materials.
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Affiliation(s)
- M Iqbal Bakti Utama
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Hongfei Zeng
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA
| | - Tumpa Sadhukhan
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - Anushka Dasgupta
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - S Carin Gavin
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA
| | - Riddhi Ananth
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Dmitry Lebedev
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Wei Wang
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Jia-Shiang Chen
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60439, USA
- Northwestern-Argonne Institute of Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Tobin J Marks
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Xuedan Ma
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60439, USA
- Northwestern-Argonne Institute of Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Emily A Weiss
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - George C Schatz
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA.
| | - Nathaniel P Stern
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA.
| | - Mark C Hersam
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA.
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA.
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA.
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19
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Xu DD, Vong AF, Lebedev D, Ananth R, Wong AM, Brown PT, Hersam MC, Mirkin CA, Weiss EA. Conversion of Classical Light Emission from a Nanoparticle-Strained WSe 2 Monolayer into Quantum Light Emission via Electron Beam Irradiation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208066. [PMID: 36373540 DOI: 10.1002/adma.202208066] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Revised: 10/19/2022] [Indexed: 06/16/2023]
Abstract
Solid-state single photon emitters (SPEs) within atomically thin transition metal dichalcogenides (TMDs) have recently attracted interest as scalable quantum light sources for quantum photonic technologies. Among TMDs, WSe2 monolayers (MLs) are promising for the deterministic fabrication and engineering of SPEs using local strain fields. The ability to reliably produce isolatable SPEs in WSe2 is currently impeded by the presence of numerous spectrally overlapping states that occur at strained locations. Here nanoparticle (NP) arrays with precisely defined positions and sizes are employed to deterministically create strain fields in WSe2 MLs, thus enabling the systematic investigation and control of SPE formation. Using this platform, electron beam irradiation at NP-strained locations transforms spectrally overlapped sub-bandgap emission states into isolatable, anti-bunched quantum emitters. The dependence of the emission spectra of WSe2 MLs as a function of strain magnitude and exposure time to electron beam irradiation is quantified and provides insight into the mechanism for SPE production. Excitons selectively funnel through strongly coupled sub-bandgap states introduced by electron beam irradiation, which suppresses spectrally overlapping emission pathways and leads to measurable anti-bunched behavior. The findings provide a strategy to generate isolatable SPEs in 2D materials with a well-defined energy range.
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Affiliation(s)
- David D Xu
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Albert F Vong
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Dmitry Lebedev
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Riddhi Ananth
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Alexa M Wong
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Paul T Brown
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Mark C Hersam
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Chad A Mirkin
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Emily A Weiss
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
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20
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Strain control of hybridization between dark and localized excitons in a 2D semiconductor. Nat Commun 2022; 13:7691. [PMID: 36509779 PMCID: PMC9744834 DOI: 10.1038/s41467-022-35352-9] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Accepted: 11/30/2022] [Indexed: 12/14/2022] Open
Abstract
Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behaviour of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related to defects remains mostly unexplored. Here, we study the strain behaviour of these fragile many-body states on pristine suspended WSe2 kept at cryogenic temperatures. We find that under the application of strain, dark and localized excitons in monolayer WSe2-a prototypical 2D semiconductor-are brought into energetic resonance, forming a new hybrid state that inherits the properties of the constituent species. The characteristics of the hybridized state, including an order-of-magnitude enhanced light/matter coupling, avoided-crossing energy shifts, and strain tunability of many-body interactions, are all supported by first-principles calculations. The hybridized excitons reported here may play a critical role in the operation of single quantum emitters based on WSe2. Furthermore, the techniques we developed may be used to fingerprint unidentified excitonic states.
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21
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Hussain N, Ahmed S, Tepe HU, Huang K, Avishan N, He S, Rafique M, Farooq U, Kasirga TS, Bek A, Turan R, Shehzad K, Wu H, Wang Z. Ultra-Narrow Linewidth Photo-Emitters in Polymorphic Selenium Nanoflakes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204302. [PMID: 36251779 DOI: 10.1002/smll.202204302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Revised: 09/02/2022] [Indexed: 06/16/2023]
Abstract
Photoluminescence (PL) in state-of-the-art 2D materials suffers from narrow spectral coverage, relatively broad linewidths, and poor room-temperature (RT) functionality. The authors report ultra-narrow linewidth photo-emitters (ULPs) across the visible to near-infrared wavelength at RT in polymorphic selenium nanoflakes (SeNFs), synthesized via a hot-pressing strategy. Photo-emitters in NIR exhibit full width at half maximum (Γ) of 330 ± 90 µeV, an order of magnitude narrower than the reported ULPs in 2D materials at 300 K, and decrease to 82 ± 70 µeV at 100 K, with coherence time (τc ) of 21.3 ps. The capping substrate enforced spatial confinement during thermal expansion at 250 °C is believed to trigger a localized crystal symmetry breaking in SeNFs, causing a polymorphic transition from the semiconducting trigonal (t) to quasi-metallic orthorhombic (orth) phase. Fine structure splitting in orth-Se causes degeneracy in defect-associated bright excitons, resulting in ultra-sharp emission. Combined theoretical and experimental findings, an optimal biaxial compressive strain of -0.45% cm-1 in t-Se is uncovered, induced by the coefficient of thermal expansion mismatch at the selenium/sapphire interface, resulting in bandgap widening from 1.74 to 2.23 ± 0.1 eV. This report underpins the underlying correlation between crystal symmetry breaking induced polymorphism and RT ULPs in SeNFs, and their phase change characteristics.
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Affiliation(s)
- Naveed Hussain
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- Department of Electrical Engineering and Computer Science, University of California Irvine, Irvine, CA, 92697, USA
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Shehzad Ahmed
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Hüseyin U Tepe
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - Kai Huang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Nardin Avishan
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - ShiJie He
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Mohsin Rafique
- Division of Quantum State of Matter, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Umar Farooq
- Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Talip Serkan Kasirga
- Institute of Materials Science and Nanotechnology, Bilkent University UNAM, Ankara, 06800, Turkey
| | - Alpan Bek
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- The Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, 06800, Turkey
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - Rasit Turan
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- The Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, 06800, Turkey
| | - Khurram Shehzad
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- Colleges of ISEE and Microelectronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Institute, State Key Labs of Silicon Materials and Modern Optical Instruments, Zhejiang University, Hangzhou, 310058, China
| | - Hui Wu
- Department of Electrical Engineering and Computer Science, University of California Irvine, Irvine, CA, 92697, USA
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
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22
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Fu Q, Dai J, Huang X, Dai Y, Pan Y, Yang L, Sun Z, Miao T, Zhou M, Zhao L, Zhao W, Han X, Lu J, Gao H, Zhou X, Wang Y, Ni Z, Ji W, Huang Y. One-Step Exfoliation Method for Plasmonic Activation of Large-Area 2D Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204247. [PMID: 36104244 PMCID: PMC9661865 DOI: 10.1002/advs.202204247] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Indexed: 06/01/2023]
Abstract
Advanced exfoliation techniques are crucial for exploring the intrinsic properties and applications of 2D materials. Though the recently discovered Au-enhanced exfoliation technique provides an effective strategy for the preparation of large-scale 2D crystals, the high cost of gold hinders this method from being widely adopted in industrial applications. In addition, direct Au contact could significantly quench photoluminescence (PL) emission in 2D semiconductors. It is therefore crucial to find alternative metals that can replace gold to achieve efficient exfoliation of 2D materials. Here, the authors present a one-step Ag-assisted method that can efficiently exfoliate many large-area 2D monolayers, where the yield ratio is comparable to Au-enhanced exfoliation method. Differing from Au film, however, the surface roughness of as-prepared Ag films on SiO2 /Si substrate is much higher, which facilitates the generation of surface plasmons resulting from the nanostructures formed on the rough Ag surface. More interestingly, the strong coupling between 2D semiconductor crystals (e.g., MoS2 , MoSe2 ) and Ag film leads to a unique PL enhancement that has not been observed in other mechanical exfoliation techniques, which can be mainly attributed to enhanced light-matter interaction as a result of extended propagation of surface plasmonic polariton (SPP). This work provides a lower-cost and universal Ag-assisted exfoliation method, while at the same time offering enhanced SPP-matter interactions.
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Affiliation(s)
- Qiang Fu
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Jia‐Qi Dai
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐Nano DevicesRenmin University of ChinaBeijing100872P. R. China
| | - Xin‐Yu Huang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Yun‐Yun Dai
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Yu‐Hao Pan
- China North Vehicle Research InstituteBeijing100072P. R. China
| | - Long‐Long Yang
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Zhen‐Yu Sun
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Tai‐Min Miao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Meng‐Fan Zhou
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Lin Zhao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- Songshan Lake Materials LaboratoryDongguan523808P. R. China
| | - Wei‐Jie Zhao
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Jun‐Peng Lu
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Hong‐Jun Gao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Xing‐Jiang Zhou
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- Songshan Lake Materials LaboratoryDongguan523808P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Ye‐Liang Wang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Zhen‐Hua Ni
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐Nano DevicesRenmin University of ChinaBeijing100872P. R. China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
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23
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Dai D, Wang X, Yang J, Dang J, Yuan Y, Fu B, Xie X, Yang L, Xiao S, Shi S, Yan S, Zhu R, Zuo Z, Wang C, Jin K, Gong Q, Xu X. Single charge control of localized excitons in heterostructures with ferroelectric thin films and two-dimensional transition metal dichalcogenides. NANOSCALE 2022; 14:14537-14543. [PMID: 36185039 DOI: 10.1039/d2nr04119g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic doping method by applying metallic gates onto TMDCs may cause inhomogeneous charge distribution, optical quenching, and energy loss. Herein, by locally controlling the ferroelectric polarization of the ferroelectric thin film BiFeO3 (BFO) with a scanning probe, we can deterministically manipulate the doping type of monolayer WSe2 to achieve p-type and n-type doping. This nonvolatile approach can maintain the doping type and hold the localized excitonic charges for a long time without applied voltage. Our work demonstrated that the ferroelectric polarization of BFO can control the charges of LXs effectively. Neutral and charged LXs have been observed in different ferroelectric polarization regions, confirmed by magnetic optical measurement. Highly circular polarization degree with 90% photon emission from these quantum emitters was achieved in high magnetic fields. Controlling the single charge of LXs in a non-volatile way shows a great potential for deterministic photon emission with desired charge states for photonic long-term memory.
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Affiliation(s)
- Danjie Dai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinyan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jingnan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
| | - Jianchen Dang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Yuan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bowen Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
| | - Xin Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Longlong Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Xiao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shushu Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Sai Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Rui Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhanchun Zuo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
| | - Xiulai Xu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
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24
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Jiang J, Pachter R. Analysis of localized excitons in strained monolayer WSe 2 by first principles calculations. NANOSCALE 2022; 14:11378-11387. [PMID: 35899773 DOI: 10.1039/d2nr02746a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although there is growing interest in enhancement of single-photon emission (SPE) in two-dimensional transition metal dichalcogenides, particularly when introducing strain by the generation of wrinkles in monolayer WSe2, understanding the effects of the wrinkle type on the response has been lacking. In this work, by investigating the electronic and optical properties of monolayer WSe2 with wrinkles by first principles calculations, we gain insight into the tunability of the response, where the band gap is found to be modulated by the wrinkle type. Our detailed analyses of the local electronic structures show that the strain distribution from regions with different local strain magnitudes and types affect the band alignments. We demonstrate that introducing a wrinkle in the monolayer results in a red-shift, including the bright A exciton and the lowest energy dark exciton, and the dependence on strain is consistent with available measurements. The energy difference between the A exciton and the lowest mid-gap energy for a single Se vacancy in the wrinkled WSe2 monolayer as a function of strain is consistent with a suggestion on the origin of SPE in monolayer WSe2. Our results will encourage engineering of wrinkle types for enhanced SPE at specific wavelengths, which could potentially originate from hybridization of the localized strained dark exciton and a mid-gap point-defect exciton.
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Affiliation(s)
- Jie Jiang
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433, USA.
| | - Ruth Pachter
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433, USA.
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25
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Ghosh Dastidar M, Thekkooden I, Nayak PK, Praveen Bhallamudi V. Quantum emitters and detectors based on 2D van der Waals materials. NANOSCALE 2022; 14:5289-5313. [PMID: 35322836 DOI: 10.1039/d1nr08193d] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.
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Affiliation(s)
- Madhura Ghosh Dastidar
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Immanuel Thekkooden
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pramoda K Nayak
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
| | - Vidya Praveen Bhallamudi
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Departments of Physics and Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India.
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26
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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27
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Gelly RJ, Renaud D, Liao X, Pingault B, Bogdanovic S, Scuri G, Watanabe K, Taniguchi T, Urbaszek B, Park H, Lončar M. Probing dark exciton navigation through a local strain landscape in a WSe 2 monolayer. Nat Commun 2022; 13:232. [PMID: 35017506 PMCID: PMC8752834 DOI: 10.1038/s41467-021-27877-2] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/08/2021] [Accepted: 12/10/2021] [Indexed: 11/16/2022] Open
Abstract
In WSe2 monolayers, strain has been used to control the energy of excitons, induce funneling, and realize single-photon sources. Here, we developed a technique for probing the dynamics of free excitons in nanoscale strain landscapes in such monolayers. A nanosculpted tapered optical fiber is used to simultaneously generate strain and probe the near-field optical response of WSe2 monolayers at 5 K. When the monolayer is pushed by the fiber, its lowest energy states shift by as much as 390 meV (>20% of the bandgap of a WSe2 monolayer). Polarization and lifetime measurements of these red-shifting peaks indicate they originate from dark excitons. We conclude free dark excitons are funneled to high-strain regions during their long lifetime and are the principal participants in drift and diffusion at cryogenic temperatures. This insight supports proposals on the origin of single-photon sources in WSe2 and demonstrates a route towards exciton traps for exciton condensation. Here, the authors use a tapered optical fibre to create a dynamic, reversible strain in a suspended WSe2 monolayer, and observe that dark excitons are funnelled to high-strain regions and are the principal participants in drift and diffusion at cryogenic temperatures.
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Affiliation(s)
- Ryan J Gelly
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Dylan Renaud
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Xing Liao
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA
| | - Benjamin Pingault
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Stefan Bogdanovic
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Giovanni Scuri
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Bernhard Urbaszek
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Hongkun Park
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA. .,Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA.
| | - Marko Lončar
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA.
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28
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Kim JM, Haque MF, Hsieh EY, Nahid SM, Zarin I, Jeong KY, So JP, Park HG, Nam S. Strain Engineering of Low-Dimensional Materials for Emerging Quantum Phenomena and Functionalities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021:e2107362. [PMID: 34866241 DOI: 10.1002/adma.202107362] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Revised: 11/11/2021] [Indexed: 06/13/2023]
Abstract
Recent discoveries of exotic physical phenomena, such as unconventional superconductivity in magic-angle twisted bilayer graphene, dissipationless Dirac fermions in topological insulators, and quantum spin liquids, have triggered tremendous interest in quantum materials. The macroscopic revelation of quantum mechanical effects in quantum materials is associated with strong electron-electron correlations in the lattice, particularly where materials have reduced dimensionality. Owing to the strong correlations and confined geometry, altering atomic spacing and crystal symmetry via strain has emerged as an effective and versatile pathway for perturbing the subtle equilibrium of quantum states. This review highlights recent advances in strain-tunable quantum phenomena and functionalities, with particular focus on low-dimensional quantum materials. Experimental strategies for strain engineering are first discussed in terms of heterogeneity and elastic reconfigurability of strain distribution. The nontrivial quantum properties of several strain-quantum coupled platforms, including 2D van der Waals materials and heterostructures, topological insulators, superconducting oxides, and metal halide perovskites, are next outlined, with current challenges and future opportunities in quantum straintronics followed. Overall, strain engineering of quantum phenomena and functionalities is a rich field for fundamental research of many-body interactions and holds substantial promise for next-generation electronics capable of ultrafast, dissipationless, and secure information processing and communications.
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Affiliation(s)
- Jin Myung Kim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Md Farhadul Haque
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Ezekiel Y Hsieh
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Shahriar Muhammad Nahid
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Ishrat Zarin
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
- Department of Physics, Jeju National University, Jeju, 63243, Republic of Korea
| | - Jae-Pil So
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science, Seoul, 02841, Republic of Korea
| | - SungWoo Nam
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Mechanical and Aerospace Engineering, University of California Irvine, Irvine, CA, 92697, USA
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29
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Zhao H, Pettes MT, Zheng Y, Htoon H. Site-controlled telecom-wavelength single-photon emitters in atomically-thin MoTe 2. Nat Commun 2021; 12:6753. [PMID: 34799576 PMCID: PMC8604946 DOI: 10.1038/s41467-021-27033-w] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2021] [Accepted: 10/29/2021] [Indexed: 11/09/2022] Open
Abstract
Quantum emitters (QEs) in two-dimensional transition metal dichalcogenides (2D TMDCs) have advanced to the forefront of quantum communication and transduction research. To date, QEs capable of operating in O-C telecommunication bands have not been demonstrated in TMDCs. Here we report site-controlled creation of telecom QEs emitting over the 1080 to 1550 nm telecommunication wavelength range via coupling of 2D molybdenum ditelluride (MoTe2) to strain inducing nano-pillar arrays. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching with 90% single-photon purity. The photon antibunching can be observed up to liquid nitrogen temperature (77 K). Polarization analysis further reveals that while some QEs display cross-linearly polarized doublets with ~1 meV splitting resulting from the strain induced anisotropic exchange interaction, valley degeneracy is preserved in other QEs. Valley Zeeman splitting as well as restoring of valley symmetry in cross-polarized doublets are observed under 8 T magnetic field. Single-photon emitters in 2D semiconductors hold promise for quantum applications, but usually operate in the 500-800 nm wavelength range. Here, the authors report site-controlled creation of quantum emitters in the telecommunication wavelength window by coupling 2D MoTe2 to strain inducing nano-pillar arrays.
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Affiliation(s)
- Huan Zhao
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA.
| | - Michael T Pettes
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA
| | - Yu Zheng
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA
| | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA.
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30
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Salomone M, Re Fiorentin M, Cicero G, Risplendi F. Point Defects in Two-Dimensional Indium Selenide as Tunable Single-Photon Sources. J Phys Chem Lett 2021; 12:10947-10952. [PMID: 34735143 PMCID: PMC8607502 DOI: 10.1021/acs.jpclett.1c02912] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2021] [Revised: 10/18/2021] [Accepted: 10/27/2021] [Indexed: 06/13/2023]
Abstract
In the past few years remarkable interest has been kindled by the development of nonclassical light sources and, in particular, of single-photon emitters (SPE), which represent fundamental building blocks for optical quantum technology. In this Letter, we analyze the stability and electronic properties of an InSe monolayer with point defects with the aim of demonstrating its applicability as an SPE. The presence of deep defect states within the InSe band gap is verified when considering substitutional defects with atoms belonging to group IV, V, and VI. In particular, the optical properties of Ge as substitution impurity of Se predicted by solving the Bethe-Salpeter equation on top of the GW corrected electronic states show that transitions between the valence band maximum and the defect state are responsible for the absorption and spontaneous emission processes, so that the latter results in a strongly peaked spectrum in the near-infrared. These properties, together with a high localization of the involved electronic states, appear encouraging in the quest for novel SPE materials.
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Affiliation(s)
- Mattia Salomone
- Dipartimento
di Scienza Applicata e Tecnologia, Politecnico
di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy
| | - Michele Re Fiorentin
- Center
for Sustainable Future Technologies, Istituto
Italiano di Tecnologia, via Livorno 60, 10144 Torino, Italy
| | - Giancarlo Cicero
- Dipartimento
di Scienza Applicata e Tecnologia, Politecnico
di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy
| | - Francesca Risplendi
- Dipartimento
di Scienza Applicata e Tecnologia, Politecnico
di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy
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31
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So JP, Kim HR, Baek H, Jeong KY, Lee HC, Huh W, Kim YS, Watanabe K, Taniguchi T, Kim J, Lee CH, Park HG. Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure. SCIENCE ADVANCES 2021; 7:eabj3176. [PMID: 34669464 PMCID: PMC8528413 DOI: 10.1126/sciadv.abj3176] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Quantum confinement in transition metal dichalcogenides (TMDCs) enables the realization of deterministic single-photon emitters. The position and polarization control of single photons have been achieved via local strain engineering using nanostructures. However, most existing TMDC-based emitters are operated by optical pumping, while the emission sites in electrically pumped emitters are uncontrolled. Here, we demonstrate electrically driven single-photon emitters located at the positions where strains are induced by atomic force microscope indentation on a van der Waals heterostructure consisting of graphene, hexagonal boron nitride, and tungsten diselenide. The optical, electrical, and mechanical properties induced by the local strain gradient were systematically analyzed. The emission at the indentation sites exhibits photon antibunching behavior with a g(2)(0) value of ~0.3, intensity saturation, and a linearly cross-polarized doublet, at 4 kelvin. This robust spatial control of electrically driven single-photon emitters will pave the way for the practical implementation of integrated quantum light sources.
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Affiliation(s)
- Jae-Pil So
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Ha-Reem Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hyeonjun Baek
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- Center for Quantum Information, Korea Institute of Science and Technology, Seoul 02841, Republic of Korea
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hoo-Cheol Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Woong Huh
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Yoon Seok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Jungkil Kim
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
- Corresponding author.
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32
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Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas. Nat Commun 2021; 12:6063. [PMID: 34663795 PMCID: PMC8523570 DOI: 10.1038/s41467-021-26262-3] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2021] [Accepted: 09/27/2021] [Indexed: 11/08/2022] Open
Abstract
Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe2 to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) saturation pulse energies and up to 104 times brighter photoluminescence than in WSe2 placed on low-refractive-index SiO2 pillars. We show that the key to these observations is the increase on average by a factor of 5 of the quantum efficiency of the emitters coupled to the nano-antennas. This further allows us to gain new insights into their photoluminescence dynamics, revealing the roles of the dark exciton reservoir and Auger processes. We also find that the coherence time of such emitters is limited by intrinsic dephasing processes. Our work establishes dielectric nano-antennas as a platform for high-efficiency quantum light generation in monolayer semiconductors. Single photon emitters (SPEs) in 2D semiconductors can be deterministically positioned using localized strain induced by underlying nanostructures. Here, the authors show SPE coupling in WSe2 to GaP dielectric nanoantennas, substantially increasing quantum efficiency and photoluminescence brightness.
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33
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Wang Q, Maisch J, Tang F, Zhao D, Yang S, Joos R, Portalupi SL, Michler P, Smet JH. Highly Polarized Single Photons from Strain-Induced Quasi-1D Localized Excitons in WSe 2. NANO LETTERS 2021; 21:7175-7182. [PMID: 34424710 PMCID: PMC8431731 DOI: 10.1021/acs.nanolett.1c01927] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 08/13/2021] [Indexed: 05/31/2023]
Abstract
Single photon emission from localized excitons in two-dimensional (2D) materials has been extensively investigated because of its relevance for quantum information applications. Prerequisites are the availability of photons with high purity polarization and controllable polarization orientation that can be integrated with optical cavities. Here, deformation strain along edges of prepatterned square-shaped substrate protrusions is exploited to induce quasi-one-dimensional (1D) localized excitons in WSe2 monolayers as an elegant way to get photons that fulfill these requirements. At zero magnetic field, the emission is linearly polarized with 95% purity because exciton states are valley hybridized with equal shares of both valleys and predominant emission from excitons with a dipole moment along the elongated direction. In a strong field, one valley is favored and the linear polarization is converted to high-purity circular polarization. This deterministic control over polarization purity and orientation is a valuable asset in the context of integrated quantum photonics.
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Affiliation(s)
- Qixing Wang
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Julian Maisch
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Fangdong Tang
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Dong Zhao
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Sheng Yang
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Raphael Joos
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Simone Luca Portalupi
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Peter Michler
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Jurgen H. Smet
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
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34
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Choi M, Jun S, Woo KY, Song HG, Yeo HS, Choi S, Park D, Park CH, Cho YH. Nanoscale Focus Pinspot for High-Purity Quantum Emitters via Focused-Ion-Beam-Induced Luminescence Quenching. ACS NANO 2021; 15:11317-11325. [PMID: 34165277 DOI: 10.1021/acsnano.1c00587] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Epitaxially grown quantum dots (QDs), especially embedded in photonic structures, play an essential role in various quantum photonic systems as on-demand single-photon sources. However, these QDs often suffer from adjacent unwanted emitters, which contribute to the background noise of the QD emission and fundamentally limit the single-photon purity. In this paper, a nanoscale focus pinspot (NFP) technique using focused-ion-beam-induced luminescence quenching enables us to improve single-photon purity from site-controlled QD as a proof-of-concept experiment. The optical quality of the QD emission is not degraded while the signal-to-noise ratio of the QD is improved. Moreover, the QD after the NFP technique reveals the single-photon nature at further elevated temperatures owing to the reduced background noise. As the NFP technique is nondestructive, it retains the apparent physical structures and photonic functions, thereby indicating its promising potential for applying diverse high-purity quantum emitters, particularly integrated in photonic devices and circuits.
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Affiliation(s)
- Minho Choi
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Seongmoon Jun
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Kie Young Woo
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyun Gyu Song
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hwan-Seop Yeo
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sunghan Choi
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Doyoun Park
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Chung-Hyun Park
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Yong-Hoon Cho
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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35
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Defect and strain engineering of monolayer WSe 2 enables site-controlled single-photon emission up to 150 K. Nat Commun 2021; 12:3585. [PMID: 34117243 PMCID: PMC8196156 DOI: 10.1038/s41467-021-23709-5] [Citation(s) in RCA: 63] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/17/2020] [Accepted: 05/11/2021] [Indexed: 11/25/2022] Open
Abstract
In recent years, quantum-dot-like single-photon emitters in atomically thin van der Waals materials have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the required cryogenic temperatures for the functionality of these sources has been an inhibitor of their full potential. Existing methods to create emitters in 2D materials face fundamental challenges in extending the working temperature while maintaining the emitter’s fabrication yield and purity. In this work, we demonstrate a method of creating site-controlled single-photon emitters in atomically thin WSe2 with high yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. Many of the emitters exhibit biexciton cascaded emission, single-photon purities above 95%, and working temperatures up to 150 K. This methodology, coupled with possible plasmonic or optical micro-cavity integration, furthers the realization of scalable, room-temperature, and high-quality 2D single- and entangled-photon sources. Quantum defects in 2D semiconductors are promising quantum light sources, but the required cryogenic temperatures limit their applicability. Here, the authors report a method to create single-photon emitters in monolayer WSe2 operating at temperatures up to 150 K without plasmonic or optical cavities.
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36
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Shaik ABDAJWI, Palla P. Optical quantum technologies with hexagonal boron nitride single photon sources. Sci Rep 2021; 11:12285. [PMID: 34112837 PMCID: PMC8192930 DOI: 10.1038/s41598-021-90804-4] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Accepted: 05/11/2021] [Indexed: 02/05/2023] Open
Abstract
Single photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter's fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.
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Affiliation(s)
- Akbar Basha Dhu-Al-Jalali-Wal-Ikram Shaik
- Center for Nanotechnology Research & Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, 632014, India
| | - Penchalaiah Palla
- Center for Nanotechnology Research & Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, 632014, India.
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37
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Liu H, Fu D, Li X, Han J, Chen X, Wu X, Sun B, Tang W, Ke C, Wu Y, Wu Z, Kang J. Enhanced Valley Splitting in Monolayer WSe 2 by Phase Engineering. ACS NANO 2021; 15:8244-8251. [PMID: 33982558 DOI: 10.1021/acsnano.0c08305] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Lifting the valley degeneracy in two-dimensional transition metal dichalcogenides could promote their applications in information processing. Various external regulations, including magnetic substrate, magnetic doping, electric field, and carrier doping, have been implemented to enhance the valley splitting under the magnetic field. Here, a phase engineering strategy, through modifying the intrinsic lattice structure, is proposed to enhance the valley splitting in monolayer WSe2. The valley splitting in hybrid H and T phase WSe2 is tunable by the concentration of the T phase. An obvious valley splitting of ∼4.1 meV is obtained with the T phase concentration of 31% under ±5 T magnetic fields, which corresponds to an effective Landé geff factor of -14, about 3.5-fold of that in pure H-WSe2. Comparing the temperature and magnetic field dependent polarized photoluminescence and also combining the theoretical simulations reveal the enhanced valley splitting is dominantly attributed to exchange interaction of H phase WSe2 with the local magnetic moments induced by the T phase. This finding provides a convenient solution for lifting the valley degeneracy of two-dimensional materials.
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Affiliation(s)
- Haiyang Liu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Deyi Fu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Xu Li
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Junbo Han
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xiaodie Chen
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xuefeng Wu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Baofan Sun
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Weiqing Tang
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Congming Ke
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yaping Wu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zhiming Wu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Junyong Kang
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
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38
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Bretscher H, Li Z, Xiao J, Qiu DY, Refaely-Abramson S, Alexander-Webber JA, Tanoh A, Fan Y, Delport G, Williams CA, Stranks SD, Hofmann S, Neaton JB, Louie SG, Rao A. Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides. ACS NANO 2021; 15:8780-8789. [PMID: 33983711 PMCID: PMC8158852 DOI: 10.1021/acsnano.1c01220] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2021] [Accepted: 05/07/2021] [Indexed: 06/01/2023]
Abstract
Structural defects vary the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to control defect type and density via materials growth or postgrowth passivation. Here, we explore a simple chemical treatment that allows on-off switching of low-lying, defect-localized exciton states, leading to tunable emission properties. Using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we show that passivation of sulfur vacancy defects, which act as exciton traps in monolayer MoS2 and WS2, allows for controllable and improved mobilities and an increase in photoluminescence up to 275-fold, more than twice the value achieved by other chemical treatments. Our findings suggest a route for simple and rational defect engineering strategies for tunable and switchable electronic and excitonic properties through passivation.
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Affiliation(s)
| | - Zhaojun Li
- University
of Cambridge, Cambridge, CB2 1TN, U.K.
- Uppsala
University, Uppsala, 751 20, Sweden
| | - James Xiao
- University
of Cambridge, Cambridge, CB2 1TN, U.K.
| | - Diana Yuan Qiu
- Yale
University, New Haven, Connecticut 06520, United States
| | | | | | - Arelo Tanoh
- University
of Cambridge, Cambridge, CB2 1TN, U.K.
| | - Ye Fan
- University
of Cambridge, Cambridge, CB2 1TN, U.K.
| | | | | | | | | | - Jeffrey B. Neaton
- University
of California Berkeley, Berkeley, California 94720, United States
- Lawrence
Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Steven G. Louie
- University
of California Berkeley, Berkeley, California 94720, United States
- Lawrence
Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Akshay Rao
- University
of Cambridge, Cambridge, CB2 1TN, U.K.
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39
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Li C, Mendelson N, Ritika R, Chen Y, Xu ZQ, Toth M, Aharonovich I. Scalable and Deterministic Fabrication of Quantum Emitter Arrays from Hexagonal Boron Nitride. NANO LETTERS 2021; 21:3626-3632. [PMID: 33870699 DOI: 10.1021/acs.nanolett.1c00685] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
We demonstrate the fabrication of large-scale arrays of single-photon emitters (SPEs) in hexagonal boron nitride (hBN). Bottom-up growth of hBN onto nanoscale arrays of dielectric pillars yields corresponding arrays of hBN emitters at the pillar sites. Statistical analysis shows that the pillar diameter is critical for isolating single defects, and diameters of ∼250 nm produce a near-unity yield of a single emitter at each pillar site. Our results constitute a promising route toward spatially controlled generation of hBN SPEs and provide an effective and efficient method to create large-scale SPE arrays. The results pave the way to scalability and high throughput fabrication of SPEs for advanced quantum photonic applications.
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Affiliation(s)
- Chi Li
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Ritika Ritika
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - YongLiang Chen
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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40
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Errando-Herranz C, Schöll E, Picard R, Laini M, Gyger S, Elshaari AW, Branny A, Wennberg U, Barbat S, Renaud T, Sartison M, Brotons-Gisbert M, Bonato C, Gerardot BD, Zwiller V, Jöns KD. Resonance Fluorescence from Waveguide-Coupled, Strain-Localized, Two-Dimensional Quantum Emitters. ACS PHOTONICS 2021; 8:1069-1076. [PMID: 34056034 PMCID: PMC8155555 DOI: 10.1021/acsphotonics.0c01653] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2020] [Indexed: 05/03/2023]
Abstract
Efficient on-chip integration of single-photon emitters imposes a major bottleneck for applications of photonic integrated circuits in quantum technologies. Resonantly excited solid-state emitters are emerging as near-optimal quantum light sources, if not for the lack of scalability of current devices. Current integration approaches rely on cost-inefficient individual emitter placement in photonic integrated circuits, rendering applications impossible. A promising scalable platform is based on two-dimensional (2D) semiconductors. However, resonant excitation and single-photon emission of waveguide-coupled 2D emitters have proven to be elusive. Here, we show a scalable approach using a silicon nitride photonic waveguide to simultaneously strain-localize single-photon emitters from a tungsten diselenide (WSe2) monolayer and to couple them into a waveguide mode. We demonstrate the guiding of single photons in the photonic circuit by measuring second-order autocorrelation of g(2)(0) = 0.150 ± 0.093 and perform on-chip resonant excitation, yielding a g(2)(0) = 0.377 ± 0.081. Our results are an important step to enable coherent control of quantum states and multiplexing of high-quality single photons in a scalable photonic quantum circuit.
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Affiliation(s)
- Carlos Errando-Herranz
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
- E-mail:
| | - Eva Schöll
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
- Department
of Physics, Paderborn University, 33098 Paderborn, Germany
- E-mail:
| | - Raphaël Picard
- Institute
for Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
| | - Micaela Laini
- Institute
for Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
| | - Samuel Gyger
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Ali W. Elshaari
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Art Branny
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Ulrika Wennberg
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Sebastien Barbat
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Thibaut Renaud
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Marc Sartison
- Department
of Physics, Paderborn University, 33098 Paderborn, Germany
| | - Mauro Brotons-Gisbert
- Institute
for Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
| | - Cristian Bonato
- Institute
for Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
| | - Brian D. Gerardot
- Institute
for Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
| | - Val Zwiller
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Klaus D. Jöns
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
- Department
of Physics, Paderborn University, 33098 Paderborn, Germany
- E-mail:
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41
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Ding S, Lin F, Jin C. Quantify point defects in monolayer tungsten diselenide. NANOTECHNOLOGY 2021; 32:255701. [PMID: 33721843 DOI: 10.1088/1361-6528/abeeb2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2020] [Accepted: 03/15/2021] [Indexed: 06/12/2023]
Abstract
Point defects may significantly influence the electrical and optoelectronic properties of two-dimensional (2D) tungsten diselenide (WSe2), while precise information about point defects distribution (e.g. species and concentration) in monolayer (ML-) WSe2are hard to obtain. In this letter, we tried to partly fill this knowledge gap via performing quantitative and statistical analysis of intrinsic point defects in WSe2monolayers prepared by three so-called main-stream approaches i.e. mechanical exfoliation (ME), chemical vapor deposition (CVD), and molecular beam epitaxy (MBE), which are promising for providing high-quality samples. Via a conjunction of statistic atomic-resolution annular dark-field scanning transmission electron microscopy imaging, software-based automated defect identification and counting, together with image simulations, defect species and concentrations were quantitatively determined. Seven types of intrinsic point defects were identified in ML-WSe2and the most dominant one is selenium mono-vacancy (VSe) (corresponding to one Se atom missing), irrespective of the synthetic route and growth conditions. Exact contents and diversity of point defects depend on the specific preparation method: CVD grown ML-WSe2is the most defective (for example, the density of VSereaches 1.48% in atomic ratio), followed by ME (∼0.85 at% for VSe) and MBE grown samples (∼0.49 at% for VSe). Our results, though still with limited sampling, provide preliminary quantitative information of point defects in ML-WSe2, which can serve as a reference to achieve the precisely controlled large-scale sample growth and establish the structure-property relationship of 2D transition-metal dichalcogenides materials.
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Affiliation(s)
- Sujuan Ding
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, People's Republic of China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Fang Lin
- College of Electronic Engineering, South China Agricultural University, Guangzhou, Guangdong 510642, People's Republic of China
| | - Chuanhong Jin
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, People's Republic of China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
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42
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Yu L, Deng M, Zhang JL, Borghardt S, Kardynal B, Vučković J, Heinz TF. Site-Controlled Quantum Emitters in Monolayer MoSe 2. NANO LETTERS 2021; 21:2376-2381. [PMID: 33689386 DOI: 10.1021/acs.nanolett.0c04282] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Atomically thin semiconductors provide a highly attractive platform for quantum emitters (QEs): They can be combined with arbitrary substrates, can be spatially aligned with photonic structures, and can be electrically driven. All QEs reported to date in these materials have, however, relied on nominally spin-forbidden transitions, with radiative rates falling substantially below those of other solid-state QE systems. Here we employ strain confinement in monolayer MoSe2 to produce engineered QEs, as confirmed in photon antibunching measurements. We discuss spin-allowed versus spin-forbidden transitions based on magneto- and time-resolved photoluminescence measurements. We calculate a radiative rate for spin-allowed quantum emission greater than 1 ns-1, which exceeds reported radiative rates of WSe2 QEs by 2 orders of magnitude.
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Affiliation(s)
- Leo Yu
- E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States
| | - Minda Deng
- E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States
| | - Jingyuan Linda Zhang
- E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States
| | - Sven Borghardt
- Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Beata Kardynal
- Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Jelena Vučković
- E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States
| | - Tony F Heinz
- E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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43
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So JP, Jeong KY, Lee JM, Kim KH, Lee SJ, Huh W, Kim HR, Choi JH, Kim JM, Kim YS, Lee CH, Nam S, Park HG. Polarization Control of Deterministic Single-Photon Emitters in Monolayer WSe 2. NANO LETTERS 2021; 21:1546-1554. [PMID: 33502866 DOI: 10.1021/acs.nanolett.1c00078] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Single-photon emitters, the basic building blocks of quantum communication and information, have been developed using atomically thin transition metal dichalcogenides (TMDCs). Although the bandgap of TMDCs was spatially engineered in artificially created defects for single-photon emitters, it remains a challenge to precisely align the emitter's dipole moment to optical cavities for the Purcell enhancement. Here, we demonstrate position- and polarization-controlled single-photon emitters in monolayer WSe2. A tensile strain of ∼0.2% was applied to monolayer WSe2 by placing it onto a dielectric rod structure with a nanosized gap. Excitons were localized in the nanogap sites, resulting in the generation of linearly polarized single-photon emission with a g(2) of ∼0.1 at 4 K. Additionally, we measured the abrupt change in polarization of single photons with respect to the nanogap size. Our robust spatial and polarization control of emission provides an efficient way to demonstrate deterministic and scalable single-photon sources by integrating with nanocavities.
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Affiliation(s)
- Jae-Pil So
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Jung Min Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Kyoung-Ho Kim
- Department of Physics, Chungbuk National University, Cheongju 28644, Republic of Korea
| | - Soon-Jae Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Woong Huh
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Ha-Reem Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Jae-Hyuck Choi
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Jin Myung Kim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Champaign, Illinois 61801, United States
| | - Yoon Seok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
- Department of Integrative Energy Engineering, Korea University, Seoul 02841, Republic of Korea
| | - SungWoo Nam
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Champaign, Illinois 61801, United States
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Champaign, Illinois 61801, United States
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science, Seoul 02841, Republic of Korea
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44
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Liu N, Gallaro CM, Shayan K, Mukherjee A, Kim B, Hone J, Vamivakas N, Strauf S. Antiferromagnetic proximity coupling between semiconductor quantum emitters in WSe 2 and van der Waals ferromagnets. NANOSCALE 2021; 13:832-841. [PMID: 33351877 DOI: 10.1039/d0nr06632j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
van der Waals ferromagnets have gained significant interest due to their unique ability to provide magnetic response even at the level of a few monolayers. Particularly in combination with 2D semiconductors, such as the transition metal dichalcogenide WSe2, one can create heterostructures that feature unique magneto-optical response in the exciton emission through the magnetic proximity effect. Here we use 0D quantum emitters in WSe2 to probe for the ferromagnetic response in heterostructures with Fe3GT and Fe5GT ferromagnets through an all-optical read-out technique that does not require electrodes. The spectrally narrow spin-doublet of the WSe2 quantum emitters allowed to fully resolve the hysteretic magneto-response in the exciton emission, revealing the characteristic signature of both ferro- and antiferromagnetic proximity coupling that originates from the interplay among Fe3GT or Fe5GT, a thin surface oxide, and the spin doublets of the quantum emitters. Our work highlights the utility of 0D quantum emitters for probing interface magnetic dipoles in vdW heterostructures with high precision. The observed hysteretic magneto response in the exciton emission of quantum emitters adds further new degrees of freedom for spin and g-factor manipulation of quantum states.
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Affiliation(s)
- Na Liu
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA. and Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
| | - Cosmo M Gallaro
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA. and Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
| | - Kamran Shayan
- The Institute of Optics, University of Rochester, Rochester, New York 14627, USA and Center for Coherence and Quantum Optics, University of Rochester, Rochester, New York 14627, USA
| | - Arunabh Mukherjee
- The Institute of Optics, University of Rochester, Rochester, New York 14627, USA and Center for Coherence and Quantum Optics, University of Rochester, Rochester, New York 14627, USA
| | - Bumho Kim
- Department of Mechanical Engineering, Columbia University, New York 10027, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York 10027, USA
| | - Nick Vamivakas
- The Institute of Optics, University of Rochester, Rochester, New York 14627, USA and Center for Coherence and Quantum Optics, University of Rochester, Rochester, New York 14627, USA and Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA
| | - Stefan Strauf
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA. and Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
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45
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Pietrow M, Zaleski R, Wagner A, Słomski P, Hirschmann E, Krause-Rehberg R, Liedke MO, Butterling M, Weinberger D. An experimental investigation of light emission produced in the process of positronium formation in matter. Phys Chem Chem Phys 2021; 23:11264-11271. [PMID: 33950060 DOI: 10.1039/d1cp00755f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The excess energy emitted during the positronium (Ps) formation in condensed matter may be released as light. Spectroscopic analysis of this light can be a new method of studying the electronic properties of materials. We report the first experimental attempt, according to our knowledge, to verify the existence of this emission process. As a result, the possibility of the emission of photons during Ps formation is within the experimental uncertainty in two different solids: an n-alkane and porous silica. However, it seems that the Ps formation on the alkane surface is not accompanied by the emission of photons with energy in the detection range of 1.6-3.8 eV. Various processes that can influence the energy of the photon emitted during the Ps formation are discussed to elucidate this issue. To aid future experiments, equations were developed to estimate the expected ratio of light emission events to annihilation events with the presence or absence of a photon during the Ps formation.
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Affiliation(s)
- M Pietrow
- Institute of Physics, M. Curie-Skłodowska University, ul. Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland.
| | - R Zaleski
- Institute of Physics, M. Curie-Skłodowska University, ul. Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland.
| | - A Wagner
- Institut für Strahlenphysik/Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | - P Słomski
- IT Company Martinex, ul. Mełgiewska 95, 21-040 Swidnik, Poland
| | - E Hirschmann
- Institut für Strahlenphysik/Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | - R Krause-Rehberg
- Institut für Physik, Universität Halle, von-Danckelmann-Platz 3, 06120 Halle, Germany
| | - M O Liedke
- Institut für Strahlenphysik/Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | - M Butterling
- Institut für Strahlenphysik/Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | - D Weinberger
- Institut für Strahlenphysik/Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
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46
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Werner WSM, Astašauskas V, Ziegler P, Bellissimo A, Stefani G, Linhart L, Libisch F. Secondary Electron Emission by Plasmon-Induced Symmetry Breaking in Highly Oriented Pyrolytic Graphite. PHYSICAL REVIEW LETTERS 2020; 125:196603. [PMID: 33216568 DOI: 10.1103/physrevlett.125.196603] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 09/15/2020] [Indexed: 06/11/2023]
Abstract
Two-particle spectroscopy with correlated electron pairs is used to establish the causal link between the secondary electron spectrum, the (π+σ) plasmon peak, and the unoccupied band structure of highly oriented pyrolytic graphite. The plasmon spectrum is resolved with respect to the involved interband transitions and clearly exhibits final state effects, in particular due to the energy gap between the interlayer resonances along the ΓA direction. The corresponding final state effects can also be identified in the secondary electron spectrum. Interpretation of the results is performed on the basis of density-functional theory and tight-binding calculations. Excitation of the plasmon perturbs the symmetry of the system and leads to hybridization of the interlayer resonances with atomlike σ^{*} bands along the ΓA direction. These hybrid states have a high density of states as well as sufficient mobility along the graphite c axis leading to the sharp ∼3 eV resonance in the spectrum of emitted secondary electrons reported throughout the literature.
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Affiliation(s)
- Wolfgang S M Werner
- Institut für Angewandte Physik, Technische Universität Wien, Wiedner Hauptstraße 8-10/134, A-1040 Vienna, Austria
| | - Vytautas Astašauskas
- Institut für Angewandte Physik, Technische Universität Wien, Wiedner Hauptstraße 8-10/134, A-1040 Vienna, Austria
| | - Philipp Ziegler
- Institut für Angewandte Physik, Technische Universität Wien, Wiedner Hauptstraße 8-10/134, A-1040 Vienna, Austria
| | - Alessandra Bellissimo
- Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, I-00146 Rome, Italy
| | - Giovanni Stefani
- Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, I-00146 Rome, Italy
| | - Lukas Linhart
- Institut für Theoretische Physik, Technische Universität Wien, Wiedner Hauptstraße 8-10/136, A-1040 Vienna, Austria
| | - Florian Libisch
- Institut für Theoretische Physik, Technische Universität Wien, Wiedner Hauptstraße 8-10/136, A-1040 Vienna, Austria
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47
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Cao L, Zhong J, Yu J, Zeng C, Ding J, Cong C, Yue X, Liu Z, Liu Y. Valley-polarized local excitons in WSe 2/WS 2 vertical heterostructures. OPTICS EXPRESS 2020; 28:22135-22143. [PMID: 32752480 DOI: 10.1364/oe.399142] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2020] [Accepted: 06/30/2020] [Indexed: 05/23/2023]
Abstract
Two-dimensional van der Waals heterostructures (vdWHs) are drawing growing interest in the investigation of their valley polarization properties of localized excitons. However, most of the reported vdWHs were made by micro-mechanical peeling, limiting their large-scale production and practical applications. Furthermore, the circular polarization characters of localized excitons in WSe2/WS2 heterostructures remain elusive. Here, a bidirectional-flow physical vapor deposition technique was employed for the synthesis of the WSe2/WS2 type-II vertical heterostructures. The interfaces of such heterojunctions are sharp and clean, making the neutral excitons of the constituent layers quenched, which significantly highlights the luminescence of the local excitons. The circular polarization of localized excitons in this WSe2/WS2 heterostructure was demonstrated by circularly-polarized PL spectroscopy. The degree of the circular polarization of the localized excitons was determined as 7.17% for σ- detection and 4.78% for σ+ detection. Such local excitons play a critical role in a quantum emitter with enhanced spontaneous emission rate that could lead to the evolution of LEDs. Our observations provide valuable information for the exploration of intriguing excitonic physics and the applications of innovative local exciton devices.
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48
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Luo Y, Liu N, Kim B, Hone J, Strauf S. Exciton Dipole Orientation of Strain-Induced Quantum Emitters in WSe 2. NANO LETTERS 2020; 20:5119-5126. [PMID: 32551697 DOI: 10.1021/acs.nanolett.0c01358] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Transition metal dichalcogenides are promising semiconductors to enable advances in photonics and electronics and have also been considered as a host for quantum emitters. Particularly, recent advances demonstrate site-controlled quantum emitters in WSe2 through strain deformation. Albeit essential for device integration, the dipole orientation of these strain-induced quantum emitters remains unknown. Here we employ angular-resolved spectroscopy to experimentally determine the dipole orientation of strain-induced quantum emitters. It is found that with increasing local strain the quantum emitters in WSe2 undergo a transition from in-plane to out-of-plane dipole orientation if their emission wavelength is longer than 750 nm. In addition, the exciton g-factor remains with average values of g = 8.52 ± 1.2 unchanged in the entire emission wavelength. These findings provide experimental support of the interlayer defect exciton model and highlight the importance of an underlying three-dimensional strain profile of deformed monolayer semiconductors, which is essential to optimize emitter-mode coupling in nanoplasmonics.
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Affiliation(s)
- Yue Luo
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
- Center for Nanoscale Systems, Harvard University, Cambridge, Massachusetts 02138, United States
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Na Liu
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
| | - Bumho Kim
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Stefan Strauf
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, United States
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49
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Zhou X, Zhang Z, Guo W. Dislocations as Single Photon Sources in Two-Dimensional Semiconductors. NANO LETTERS 2020; 20:4136-4143. [PMID: 32453959 DOI: 10.1021/acs.nanolett.9b05305] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Single photon sources hold great promise in quantum information technologies and are often materialized by single atoms, quantum dots, and point defects in dielectric materials. Yet, these entities are vulnerable to annealing and chemical passivation, ultimately influencing the stability of photonic devices. Here, we show that topologically stable dislocations in transition metal dichalcogenide monolayers can act as single photon sources, as supported by calculated defect levels, diploe matrix elements for transition, and excitation lifetimes with first-principles. The emission from dislocations can range from 0.48 to 1.29 eV by varying their structure, charge state, and chemical makeup in contrast to the visible range provided by previously reported sources. Since recent experiments have controllably created dislocations in monolayer materials, these results open the door to utilizing robustly stable defects for quantum computing.
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Affiliation(s)
- Xiaocheng Zhou
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Zhuhua Zhang
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
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50
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Mennel L, Smejkal V, Linhart L, Burgdörfer J, Libisch F, Mueller T. Band Nesting in Two-Dimensional Crystals: An Exceptionally Sensitive Probe of Strain. NANO LETTERS 2020; 20:4242-4248. [PMID: 32436711 PMCID: PMC7291349 DOI: 10.1021/acs.nanolett.0c00694] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Band nesting occurs when conduction and valence bands are approximately equispaced over regions in the Brillouin zone. In two-dimensional materials, band nesting results in singularities of the joint density of states and thus in a strongly enhanced optical response at resonant frequencies. We exploit the high sensitivity of such resonances to small changes in the band structure to sensitively probe strain in semiconducting transition metal dichalcogenides (TMDs). We measure and calculate the polarization-resolved optical second harmonic generation (SHG) at the band nesting energies and present the first measurements of the energy-dependent nonlinear photoelastic effect in atomically thin TMDs (MoS2, MoSe2, WS2, and WSe2) combined with a theoretical analysis of the underlying processes. Experiment and theory are found to be in good qualitative agreement displaying a strong energy dependence of the SHG, which can be exploited to achieve exceptionally strong modulation of the SHG under strain. We attribute this sensitivity to a redistribution of the joint density of states for the optical response in the band nesting region. We predict that this exceptional strain sensitivity is a general property of all 2D materials with band nesting.
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Affiliation(s)
- Lukas Mennel
- Vienna
University of Technology, Institute of Photonics, Gußhausstraße 27-29, 1040 Vienna, Austria,
EU
- E-mail:
| | - Valerie Smejkal
- Vienna
University of Technology, Institute of Theoretical
Physics, Wiedner Hauptstraße
8-10, 1040 Vienna, Austria, EU
- E-mail:
| | - Lukas Linhart
- Vienna
University of Technology, Institute of Theoretical
Physics, Wiedner Hauptstraße
8-10, 1040 Vienna, Austria, EU
| | - Joachim Burgdörfer
- Vienna
University of Technology, Institute of Theoretical
Physics, Wiedner Hauptstraße
8-10, 1040 Vienna, Austria, EU
| | - Florian Libisch
- Vienna
University of Technology, Institute of Theoretical
Physics, Wiedner Hauptstraße
8-10, 1040 Vienna, Austria, EU
| | - Thomas Mueller
- Vienna
University of Technology, Institute of Photonics, Gußhausstraße 27-29, 1040 Vienna, Austria,
EU
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