Gallium Phosphide as a Piezoelectric Platform for Quantum Optomechanics

High Q-Factor Diamond Optomechanical Resonators with Silicon Vacancy Centers at Millikelvin Temperatures

Phonons are envisioned as coherent intermediaries between different types of quantum systems. Engineered nanoscale devices, such as optomechanical crystals (OMCs), provide a platform to utilize phonons as quantum information carriers. Here we demonstrate OMCs in diamond designed for strong for interactions between phonons and a silicon vacancy (SiV) spin. Using optical measurements at millikelvin temperatures, we measure a line width of 13 kHz (Q-factor of ∼4.4 × 105) for a 6 GHz acoustic mode, a record for diamond in the GHz frequency range and within an order of magnitude of state-of-the-art line widths for OMCs in silicon. We investigate SiV optical and spin properties in these devices and outline a path toward a coherent spin-phonon interface.

Silicon-Lattice-Matched Boron-Doped Gallium Phosphide: A Scalable Acousto-Optic Platform

The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide bandgap, strong nonlinear properties, and large acousto-optic figure of merit. This study demonstrates that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths, respectively. It further demonstrates the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional mapping, combined with ab initio calculations, indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.

Optomechanical ring resonator for efficient microwave-optical frequency conversion

Phonons traveling in solid-state devices are emerging as a universal excitation for coupling different physical systems. Phonons at microwave frequencies have a similar wavelength to optical photons in solids, enabling optomechanical microwave-optical transduction of classical and quantum signals. It becomes conceivable to build optomechanical integrated circuits (OMIC) that guide both photons and phonons and interconnect photonic and phononic devices. Here, we demonstrate an OMIC including an optomechanical ring resonator (OMR), where  co-resonant infrared photons and GHz phonons induce significantly enhanced interconversion. The platform is hybrid, using wide bandgap semiconductor gallium phosphide (GaP) for waveguiding and piezoelectric zinc oxide (ZnO) for phonon generation. The OMR features photonic and phononic quality factors of >1 × 105 and 3.2 × 103, respectively. The optomechanical interconversion between photonic modes achieved an internal conversion efficiency [Formula: see text] and a total device efficiency [Formula: see text] at a low acoustic pump power of 1.6 mW. The efficient conversion in OMICs enables microwave-optical transduction for quantum information and microwave photonics applications.

Sub-Hz Closed-Loop Electro-Optomechanical Oscillator with Gallium Phosphide Photonic Crystal Integrated on SoI Circuitry

We report on a new approach of a low phase noise electro-optomechanical oscillator directly working in the GHz frequency range. The developed nanoscale oscillator is a one-dimensional photonic crystal made of gallium phosphide (GaP), heterogeneously integrated on silicon-on-insulator circuitry. Based on the strong interaction between the optical mode at the telecommunication wavelength and the mechanical mode in GHz, ultra-pure mechanical oscillations are enabled and directly imprinted on an optical carrier. Further stabilization is achieved with a delayed optoelectronic feedback loop using integrated electro-mechanical self-injection. We achieve a short-term stability of 0.7 Hz linewidth and a long-term stability with an Allan deviation below 10-7 Hz/Hz at 10 s averaging time, which represents an important step toward fully integrated optomechanical oscillators. Integrability and the low phase noise of this oscillator address some of the most important needs of optoelectronic oscillators and pave the way toward on-chip integrated microwave oscillators for microwave applications such as RADARs.

On-chip distribution of quantum information using traveling phonons

Distributing quantum entanglement on a chip is a crucial step toward realizing scalable quantum processors. Using traveling phonons-quantized guided mechanical wave packets-as a medium to transmit quantum states is now gaining substantial attention due to their small size and low propagation speed compared to other carriers, such as electrons or photons. Moreover, phonons are highly promising candidates to connect heterogeneous quantum systems on a chip, such as microwave and optical photons for long-distance transmission of quantum states via optical fibers. Here, we experimentally demonstrate the feasibility of distributing quantum information using phonons by realizing quantum entanglement between two traveling phonons and creating a time-bin-encoded traveling phononic qubit. The mechanical quantum state is generated in an optomechanical cavity and then launched into a phononic waveguide in which it propagates for around 200 micrometers. We further show how the phononic, together with a photonic qubit, can be used to violate a Bell-type inequality.

Ultra-low-noise microwave to optics conversion in gallium phosphide

Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference between the frequencies can add significant noise to the transduced signal. Here we exploit the remarkable properties of thin-film gallium phosphide to demonstrate bi-directional on-chip conversion between microwave and optical frequencies, realized by piezoelectric actuation of a Gigahertz-frequency optomechanical resonator. The large optomechanical coupling and the suppression of two-photon absorption in the material allows us to operate the device at optomechanical cooperativities greatly exceeding one. Alternatively, when using a pulsed upconversion pump, we demonstrate that we induce less than one thermal noise phonon. We include a high-impedance on-chip matching resonator to mediate the mechanical load with the 50-Ω source. Our results establish gallium phosphide as a versatile platform for ultra-low-noise conversion of photons between microwave and optical frequencies.

Microwave-to-optical conversion with a gallium phosphide photonic crystal cavity

Electrically actuated optomechanical resonators provide a route to quantum-coherent, bidirectional conversion of microwave and optical photons. Such devices could enable optical interconnection of quantum computers based on qubits operating at microwave frequencies. Here we present a platform for microwave-to-optical conversion comprising a photonic crystal cavity made of single-crystal, piezoelectric gallium phosphide integrated on pre-fabricated niobium circuits on an intrinsic silicon substrate. The devices exploit spatially extended, sideband-resolved mechanical breathing modes at ~3.2 GHz, with vacuum optomechanical coupling rates of up to g₀/2π ≈ 300 kHz. The mechanical modes are driven by integrated microwave electrodes via the inverse piezoelectric effect. We estimate that the system could achieve an electromechanical coupling rate to a superconducting transmon qubit of ~200 kHz. Our work represents a decisive step towards integration of piezoelectro-optomechanical interfaces with superconducting quantum processors.

A route to scalability for superconducting quantum computation is the modular approach, which however requires coherent microwave-to-optical conversion. Here the authors use gallium phosphide optomechanical crystal cavities for this task, exploiting their high refractive index and large OM coupling rate.

Room-Temperature Silicon Platform for GHz-Frequency Nanoelectro-Opto-Mechanical Systems

Nanoelectro-opto-mechanical systems enable the synergistic coexistence of electrical, mechanical, and optical signals on a chip to realize new functions. Most of the technology platforms proposed for the fabrication of these systems so far are not fully compatible with the mainstream CMOS technology, thus, hindering the mass-scale utilization. We have developed a CMOS technology platform for nanoelectro-opto-mechanical systems that includes piezoelectric interdigitated transducers for electronic driving of mechanical signals and nanocrystalline silicon nanobeams for an enhanced optomechanical interaction. Room-temperature operation of devices at 2 GHz and with peak sensitivity down to 2.6 cavity phonons is demonstrated. Our proof-of-principle technology platform can be integrated and interfaced with silicon photonics, electronics, and MEMS devices and may enable multiple functions for coherent signal processing in the classical and quantum domains.

Thin-Film Lithium Niobate Based Acousto-Optic Modulation Working at Higher-Order TE1 Mode

Acousto-optic modulation (AOM) is regarded as an effective way to link multi-physical fields on-chip. We propose an on-chip AOM scheme based on the thin-film lithium niobate (TFLN) platform working at the higher-order TE1 mode, rather than the commonly used fundamental TE0 mode. Multi-physical field coupling analyses were carried out to obtain the refractive index change of the optical waveguide (>6.5×10−10 for a single phonon) induced by the enhanced acousto-optic interaction between the acoustic resonator mode and the multimode optical waveguide. By using a Mach-Zehnder interferometer (MZI) structure, the refractive index change is utilized to modulate the output spectrum of the MZI, thus achieving the AOM function. In the proposed AOM scheme, efficient mode conversion between the TE0 and TE1 mode is required in order to ensure that the AOM works at the higher-order TE1 mode in the MZI structure. Our results show that the half-wave-voltage-length product (VπL) is <0.01 V·cm, which is lower than that in some previous reports on AOM and electro-optic modulation (EOM) working at the fundamental TE0 mode (e.g., VπL > 0.04 V·cm for AOM, VπL > 1 V·cm for EOM). Finally, the proposed AOM has lower loss when compared with EOM because the electrode of the AOM can be placed far from the optical waveguide.

Impact of the central frequency of environment on non-Markovian dynamics in piezoelectric optomechanical devices

The piezoelectric optomechanical devices supply a promising experimental platform to realize the coherent and effective control and measurement of optical circuits working in Terahertz (THz) frequencies via superconducting electron devices typically working in Radio (MHz) frequencies. However, quantum fluctuations are unavoidable when the size of mechanical oscillators enter into the nanoscale. The consequences of the noisy environment are still challenging due to the lack of analytical tools. In this paper, a semi-classical and full-quantum model of piezoelectric optomechanical systems coupled to a noisy bosonic quantum environment are introduced and solved in terms of quantum-state diffusion (QSD) trajectories in the non-Markovian regime. We show that the noisy environment, particularly the central frequency of the environment, can enhance the entanglement generation between optical cavities and LC circuits in some parameter regimes. Moreover, we observe the critical points in the coefficient functions, which can lead the different behaviors in the system. Besides, we also witness the entanglement transfers between macroscopic objects due to the memory effect of the environment. Our work can be applied in the fields of electric/ optical switches, and long-distance distribution in a large-scale quantum network.