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Zhang B, Ao Z, Zhang F, Zhong J, Zhang S, Liu H, Chen Y, Xie J, Wen W, Wang G, Chen P, Yang X, Cao J, Zhong M, Li H, Zhang Z. Controlled growth of asymmetric chiral TeOx for broad-spectrum, high-responsivity and polarization-sensitive photodetection. J Chem Phys 2024; 161:084705. [PMID: 39171714 DOI: 10.1063/5.0222227] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Accepted: 08/08/2024] [Indexed: 08/23/2024] Open
Abstract
Low-dimensional nanostructures, especially one-dimensional materials, exhibit remarkable anisotropic characteristics due to their low symmetry, making them promising candidates for polarization-sensitive photodetection. Here, we present a chemical vapor deposition synthesis method for tellurium suboxide (TeOx), confirming the practicality of photodetectors constructed from TeOx nanowires (NWs) in high-responsivity, broadband, and polarization-sensitive detection. By precisely controlling the thermodynamics and kinetics of TeOx NWs growth, we achieve large-scale growth of TeOx NWs with highly controllable dimensions and propose a method to induce intrinsic built-in strain in TeOx NWs. Photodetectors based on quasi-one-dimensional TeOx NWs with ohmic contact demonstrate broadband spectral response (638-1550 nm), high responsivity (13 700 mA·W-1), and superior air stability. Particularly, owing to the inherent structural anisotropy of the photodetectors, they exhibit polarization-sensitive photodetection, with anisotropy ratios of 1.70 and 1.71 at 638 and 808 nm, respectively.
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Affiliation(s)
- Baihui Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
| | - Zhikang Ao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
| | - Fen Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
| | - Jiang Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
| | - Shunhui Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
| | - Hang Liu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Yinghao Chen
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
| | - Jianing Xie
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
| | - Wenkui Wen
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
| | - Guang Wang
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, People's Republic of China
| | - Peng Chen
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo 315211, People's Republic of China
| | - Jinhui Cao
- College of Energy and Power Engineering, Changsha University of Science and Technology, Changsha 410114, People's Republic of China
| | - Mianzeng Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
| | - Hongjian Li
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, People's Republic of China
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Xu T, Zhong F, Wang P, Wang Z, Ge X, Wang J, Wang H, Zhang K, Zhang Z, Zhao T, Yu Y, Luo M, Wang Y, Jiang R, Wang F, Chen F, Liu Q, Hu W. Van der Waals mid-wavelength infrared detector linear array for room temperature passive imaging. SCIENCE ADVANCES 2024; 10:eadn0560. [PMID: 39093971 PMCID: PMC11296343 DOI: 10.1126/sciadv.adn0560] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Accepted: 06/27/2024] [Indexed: 08/04/2024]
Abstract
Passive imaging for mid-wave infrared (MWIR) is resistant to atmospheric pollutants, guaranteeing image clarity and accuracy. Arrayed photodetectors can simultaneously perform radiation sensing to improve efficiency. Room temperature van der Waals (vdWs) photodetectors without lattice matching have evolved rapidly with optimized stacking methods, primarily for single-pixel devices. The urgent need to implement arrayed devices aligns with practical demands. Here, we present an 8 by 1 black phosphorus/molybdenum sulfide (BP/MoS2) vdWs photodetector linear array with a fill-factor of ~77%, fabricated using a temperature-assisted sloping transfer method. The flat interface and uniform thickness facilitate carrier transport and minimize pixel nonuniformities, showing an average peak detectivity (D*) of 2.34 × 109 cm·Hz1/2·W-1 in the mid-wave infrared region. Compared to a single pixel, push-broom scanning passive imaging is eight times more efficient and further enhanced through mean filtering and fast Fourier transform filtering for strip noise correction. Our study offers guidance on vdWs arrayed devices for engineering applications.
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Affiliation(s)
- Tengfei Xu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Fang Zhong
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Jinjin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Kun Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Zhenhan Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Tiange Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China
| | - Min Luo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Ruiqi Jiang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Fansheng Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Qi Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- University of Chinese Academy of Sciences, Beijing, China
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3
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Park J, Wu Y, Suk Kim J, Byun J, Lee J, Oh YK. Cytoskeleton-modulating nanomaterials and their therapeutic potentials. Adv Drug Deliv Rev 2024; 211:115362. [PMID: 38906478 DOI: 10.1016/j.addr.2024.115362] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2024] [Revised: 05/25/2024] [Accepted: 06/16/2024] [Indexed: 06/23/2024]
Abstract
The cytoskeleton, an intricate network of protein fibers within cells, plays a pivotal role in maintaining cell shape, enabling movement, and facilitating intracellular transport. Its involvement in various pathological states, ranging from cancer proliferation and metastasis to the progression of neurodegenerative disorders, underscores its potential as a target for therapeutic intervention. The exploration of nanotechnology in this realm, particularly the use of nanomaterials for cytoskeletal modulation, represents a cutting-edge approach with the promise of novel treatments. Inorganic nanomaterials, including those derived from gold, metal oxides, carbon, and black phosphorus, alongside organic variants such as peptides and proteins, are at the forefront of this research. These materials offer diverse mechanisms of action, either by directly interacting with cytoskeletal components or by influencing cellular signaling pathways that, in turn, modulate the cytoskeleton. Recent advancements have introduced magnetic field-responsive and light-responsive nanomaterials, which allow for targeted and controlled manipulation of the cytoskeleton. Such precision is crucial in minimizing off-target effects and enhancing therapeutic efficacy. This review explores the importance of research into cytoskeleton-targeting nanomaterials for developing therapeutic interventions for a range of diseases. It also addresses the progress made in this field, the challenges encountered, and future directions for using nanomaterials to modulate the cytoskeleton. The continued exploration of nanomaterials for cytoskeleton modulation holds great promise for advancing therapeutic strategies against a broad spectrum of diseases, marking a significant step forward in the intersection of nanotechnology and medicine.
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Affiliation(s)
- Jinwon Park
- College of Pharmacy and Research Institute of Pharmaceutical Sciences, Seoul National University, Seoul 08826, Republic of Korea
| | - Yina Wu
- College of Pharmacy and Research Institute of Pharmaceutical Sciences, Seoul National University, Seoul 08826, Republic of Korea
| | - Jung Suk Kim
- College of Pharmacy and Research Institute of Pharmaceutical Sciences, Seoul National University, Seoul 08826, Republic of Korea
| | - Junho Byun
- College of Pharmacy and Research Institute of Pharmaceutical Sciences, Seoul National University, Seoul 08826, Republic of Korea.
| | - Jaiwoo Lee
- College of Pharmacy and Research Institute of Pharmaceutical Sciences, Seoul National University, Seoul 08826, Republic of Korea.
| | - Yu-Kyoung Oh
- College of Pharmacy and Research Institute of Pharmaceutical Sciences, Seoul National University, Seoul 08826, Republic of Korea.
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Wang P, Li Z, Xia X, Zhang J, Lan Y, Zhu L, Ke Q, Mu H, Lin S. Anisotropic Te/PdSe 2 Van Der Waals Heterojunction for Self-Powered Broadband and Polarization-Sensitive Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2401216. [PMID: 38593322 DOI: 10.1002/smll.202401216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Revised: 03/16/2024] [Indexed: 04/11/2024]
Abstract
Polarization-sensitive broadband optoelectronic detection is crucial for future sensing, imaging, and communication technologies. Narrow bandgap 2D materials, such as Te and PdSe2, show promise for these applications, yet their polarization performance is limited by inherent structural anisotropies. In this work, a self-powered, broadband photodetector utilizing a Te/PdSe2 van der Waals (vdWs) heterojunction, with orientations meticulously tailored is introduced through polarized Raman optical spectra and tensor calculations to enhance linear polarization sensitivity. The device exhibits anisotropy ratios of 1.48 at 405 nm, 3.56 at 1550 nm, and 1.62 at 4 µm, surpassing previously-reported photodetectors based on pristine Te and PdSe2. Additionally, it exhibits high responsivity (617 mA W-1 at 1550 nm), specific detectivity (5.27 × 1010 Jones), fast response (≈4.5 µs), and an extended spectral range beyond 4 µm. The findings highlight the significance of orientation-engineered heterostructures in enhancing polarization-sensitive photodetectors and advancing optoelectronic technology.
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Affiliation(s)
- Pu Wang
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Zhao Li
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- School of Automation and Information Engineering, Xi'an University of Technology, Xi'an, 710048, P. R. China
| | - Yingying Lan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Lu Zhu
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Qingqing Ke
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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Cheng T, Meng Y, Luo M, Xian J, Luo W, Wang W, Yue F, Ho JC, Yu C, Chu J. Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403129. [PMID: 39030967 DOI: 10.1002/smll.202403129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 06/17/2024] [Indexed: 07/22/2024]
Abstract
The strategic integration of low-dimensional InAs-based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs-based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single-atomic-layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs-based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs-based materials and the working principles of InAs-based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs-based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi-functional applications, and incorporating deep learning into first-principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.
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Affiliation(s)
- Tiantian Cheng
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Yuxin Meng
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Man Luo
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Jiachi Xian
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Wenjin Luo
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Weijun Wang
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Fangyu Yue
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Chenhui Yu
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Junhao Chu
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
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Cao Z, Ju L, Wei B, Wang S, Wu Y, Han T, Wei X, Wang W, Li F, Shan L, Long M. High-Sensitive Uncooled Mid-Wave Infrared Detector Based on TiS 3 Nanoribbon. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401194. [PMID: 38984765 DOI: 10.1002/smll.202401194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2024] [Revised: 04/26/2024] [Indexed: 07/11/2024]
Abstract
High-sensitive uncooled mid-wave infrared (MWIR) photodetection with fast speed is highly desired for biomedical imaging, optical communication, and night vision technology. Low-dimensional materials with low dark current and broadband photoresponse hold great promise for use in MWIR detection. Here, this study reports a high-performance MWIR photodetector based on a titanium trisulfide (TiS3) nanoribbon. This device demonstrates an ultra-broadband photoresponse ranging from the visible spectrum to the MWIR spectrum (405-4275 nm). In the MWIR spectral range, the photodetector achieves competitive high photoresponsivity (R) of 21.1 A W-1, and an impressive specific detectivity (D*) of 5.9 × 1010 cmHz1/2 W-1 in ambient air. Remarkably, the photoresponse speed in the MWIR with τr = 1.3 ms and τd = 1.5 ms is realized which is much faster than the thermal time constant of 15 ms. These findings pave the way for highly sensitive, room-temperature MWIR photodetectors with exceptionally fast response speed.
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Affiliation(s)
- Zhangyu Cao
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Le Ju
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Binbin Wei
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Suofu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Yanwei Wu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Xiangfei Wei
- Department of Electronics and Information Engineering, BoZhou University, 2266 Tangwang Road, Bozhou, 236800, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing, 211189, China
| | - Feng Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
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7
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Yu Y, Xiong T, Zhou Z, Liu D, Liu YY, Yang J, Wei Z. Spectrum-Dependent Image Convolutional Processing via a Two-Dimensional Polarization-Sensitive Photodetector. NANO LETTERS 2024; 24:6788-6796. [PMID: 38781093 DOI: 10.1021/acs.nanolett.4c01543] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Currently, the improvement in the processing capacity of traditional processors considerably lags behind the demands of real-time image processing caused by the advancement of photodetectors and the widespread deployment of high-definition image sensors. Therefore, achieving real-time image processing at the sensor level has become a prominent research domain in the field of photodetector technology. This goal underscores the need for photodetectors with enhanced multifunctional integration capabilities than can perform real-time computations using optical or electrical signals. In this study, we employ an innovative p-type semiconductor GaTe0.5Se0.5 to construct a polarization-sensitive wide-spectral photodetector. Leveraging the wide-spectral photoresponse, we realize three-band imaging within a wavelength range of 390-810 nm. Furthermore, real-time image convolutional processing is enabled by configuring appropriate convolution kernels based on the polarization-sensitive photocurrents. The innovative design of the polarization-sensitive wide-spectral GaTe0.5Se0.5-based photodetector represents a notable contribution to the domain of real-time image perception and processing.
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Affiliation(s)
- Yali Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tao Xiong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ziqi Zhou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Duanyang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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8
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Cao H, Hu T, Zhang J, Zhao D, Chen Y, Wang X, Yang J, Zhang Y, Tang X, Bai W, Shen H, Wang J, Chu J. Electrically Tunable Multiple-Effects Synergistic and Boosted Photoelectric Performance in Te/WSe 2 Mixed-Dimensional Heterojunction Phototransistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400018. [PMID: 38502873 PMCID: PMC11165519 DOI: 10.1002/advs.202400018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2024] [Revised: 02/19/2024] [Indexed: 03/21/2024]
Abstract
Mix-dimensional heterojunctions (MDHJs) photodetectors (PDs) built from bulk and 2D materials are the research focus to develop hetero-integrated and multifunctional optoelectronic sensor systems. However, it is still an open issue for achieving multiple effects synergistic characteristics to boost sensitivity and enrich the prospect in artificial bionic systems. Herein, electrically tunable Te/WSe2 MDHJs phototransistors are constructed, and an ultralow dark current below 0.1 pA and a large on/off rectification ratio of 106 is achieved. Photoconductive, photovoltaic, and photo-thermoelectric conversions are simultaneously demonstrated by tuning the gate and bias. By these synergistic effects, responsivity and detectivity respectively reach 13.9 A W-1 and 1.37 × 1012 Jones with 400 times increment. The Te/WSe2 MDHJs PDs can function as artificial bionic visual systems due to the comparable response time to those of the human visual system and the presence of transient positive and negative response signals. This work offers an available strategy for intelligent optoelectronic devices with hetero-integration and multifunctions.
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Affiliation(s)
- Hechun Cao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Tao Hu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jiyue Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Dongyang Zhao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Yan Chen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
| | - Xudong Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuanShanxi030006P. R. China
| | - Wei Bai
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Hong Shen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jianlu Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
- Frontier Institute of Chip and SystemFudan UniversityShanghai200433P. R. China
| | - Junhao Chu
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
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9
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Yu X, Ji Y, Shen X, Le X. Progress in Advanced Infrared Optoelectronic Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:845. [PMID: 38786801 PMCID: PMC11123936 DOI: 10.3390/nano14100845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/09/2024] [Accepted: 05/10/2024] [Indexed: 05/25/2024]
Abstract
Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.
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Affiliation(s)
- Xiang Yu
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Xinyi Shen
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Xiaoyun Le
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
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10
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Xia K, Gao XD, Fei GT, Xu SH, Liang YF, Qu XX. High-Performance Visible to Mid-Infrared Photodetectors Based on HgTe Colloidal Quantum Dots under Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38669621 DOI: 10.1021/acsami.4c00641] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/28/2024]
Abstract
HgTe colloidal quantum dots (CQDs) are one of few materials that can realize near-to-midwave infrared photodetection. And the quality of HgTe CQD directly affects the performance of photodetection. In this work, we optimize the method of synthesizing HgTe CQDs to reduce the defect concentration, therefore improving the photoelectric properties. The photodetector based on HeTe CQD can respond to the light from the visible to mid-infrared band. Notably, a photoresponse to 4000 nm light at room temperature is realized. The responsivity and detectivity are 90.6 mA W-1 and 6.9 × 107 Jones under 1550 nm light illumination, which are better than these of most reported HgTe CQD photodetectors. The response speed reaches a magnitude of microseconds with a rising time of τr = 1.9 μs and a falling time of τf = 1.5 μs at 10 kHz under 1550 nm light illumination.
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Affiliation(s)
- Kai Xia
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
- University of Science and Technology of China, Hefei, Anhui 230026, PR China
| | - Xu Dong Gao
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
| | - Guang Tao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
| | - Shao Hui Xu
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
| | - Yi Fei Liang
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
- University of Science and Technology of China, Hefei, Anhui 230026, PR China
| | - Xiao Xuan Qu
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
- University of Science and Technology of China, Hefei, Anhui 230026, PR China
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11
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Qi J, Dai Y, Ma C, Ke C, Wang W, Wu Z, Wang X, Bao K, Xu Y, Huang H, Wang L, Wu J, Luo G, Chen Y, Lin Z, He Q. Surfactant-Free Ultrasonication-Assisted Synthesis of 2d Tellurium Based on Metastable 1T'-MoTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306962. [PMID: 37652747 DOI: 10.1002/adma.202306962] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/21/2023] [Indexed: 09/02/2023]
Abstract
Elemental 2D materials (E2DMs) have been attracting considerable attention owing to their chemical simplicity and excellent/exotic properties. However, the lack of robust chemical synthetic methods seriously limits their potential. Here, a surfactant-free liquid-phase synthesis of high-quality 2D tellurium is reported based on ultrasonication-assisted exfoliation of metastable 1T'-MoTe2. The as-grown 2D tellurium nanosheets exhibit excellent single crystallinity, ideal 2D morphology, surfactant-free surface, and negligible 1D by-products. Furthermore, a unique growth mechanism based on the atomic escape of Te atoms from metastable transition metal dichalcogenides and guided 2D growth in the liquid phase is proposed and verified. 2D tellurium-based field-effect transistors show ultrahigh hole mobility exceeding 1000 cm2 V-1 s-1 at room temperature attributing to the high crystallinity and surfactant-free surface, and exceptional chemical and operational stability using both solid-state dielectric and liquid-state electrical double layer. The facile ultrasonication-assisted synthesis of high-quality 2D tellurium paves the way for further exploration of E2DMs and expands the scope of liquid-phase exfoliation (LPE) methodology toward the controlled wet-chemical synthesis of functional nanomaterials.
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Affiliation(s)
- Junlei Qi
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China
| | - Chen Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, 999077, China
| | - Chengxuan Ke
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Wenbin Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Zongxiao Wu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Xiang Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Kai Bao
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yue Xu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Lingzhi Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Jingkun Wu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Guangfu Luo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, 999077, China
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
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12
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Si W, Zhou W, Liu X, Wang K, Liao Y, Yan F, Ji X. Recent Advances in Broadband Photodetectors from Infrared to Terahertz. MICROMACHINES 2024; 15:427. [PMID: 38675239 PMCID: PMC11051910 DOI: 10.3390/mi15040427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Revised: 03/15/2024] [Accepted: 03/19/2024] [Indexed: 04/28/2024]
Abstract
The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.
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Affiliation(s)
- Wei Si
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Wenbin Zhou
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiangze Liu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Ke Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Yiming Liao
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Feng Yan
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoli Ji
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
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13
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Guo X, Lu X, Jiang P, Bao X. Touchless Thermosensation Enabled by Flexible Infrared Photothermoelectric Detector for Temperature Prewarning Function of Electronic Skin. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313911. [PMID: 38424290 DOI: 10.1002/adma.202313911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 02/12/2024] [Indexed: 03/02/2024]
Abstract
Artificial skin, endowed with the capability to perceive thermal stimuli without physical contact, will bring innovative interactive experiences into smart robotics and augmented reality. The implementation of touchless thermosensation, responding to both hot and cold stimuli, relies on the construction of a flexible infrared detector operating in the long-wavelength infrared range to capture the spontaneous thermal radiation. This imposes rigorous requirements on the photodetection performance and mechanical flexibility of the detector. Herein, a flexible and wearable infrared detector is presented, on basis of the photothermoelectric coupling of the tellurium-based thermoelectric multilayer film and the infrared-absorbing polyimide substrate. By suppressing the optical reflection loss and aligning the destructive interference position with the absorption peak of polyimide, the fabricated thermopile detector exhibits high sensitivity to the thermal radiation over a broad source temperature range from -50 to 110 °C, even capable of resolving 0.05 °C temperature change. Spatially resolved radiation distribution sensing is also achieved by constructing an integrated thermopile array. Furthermore, an established temperature prewarning system is demonstrated for soft robotic gripper, enabling the identification of noxious thermal stimuli in a contactless manner. A feasible strategy is offered here to integrate the infrared detection technique into the sensory modality of electronic skin.
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Affiliation(s)
- Xiaohan Guo
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaowei Lu
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
- School of Biomedical Engineering, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, 215123, China
| | - Peng Jiang
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
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14
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Jiang H, Fu J, Wei J, Li S, Nie C, Sun F, Wu QYS, Liu M, Dong Z, Wei X, Gao W, Qiu CW. Synergistic-potential engineering enables high-efficiency graphene photodetectors for near- to mid-infrared light. Nat Commun 2024; 15:1225. [PMID: 38336952 PMCID: PMC10858052 DOI: 10.1038/s41467-024-45498-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Accepted: 01/26/2024] [Indexed: 02/12/2024] Open
Abstract
High quantum efficiency and wide-band detection capability are the major thrusts of infrared sensing technology. However, bulk materials with high efficiency have consistently encountered challenges in integration and operational complexity. Meanwhile, two-dimensional (2D) semimetal materials with unique zero-bandgap structures are constrained by the bottleneck of intrinsic quantum efficiency. Here, we report a near-mid infrared ultra-miniaturized graphene photodetector with configurable 2D potential well. The 2D potential well constructed by dielectric structures can spatially (laterally and vertically) produce a strong trapping force on the photogenerated carriers in graphene and inhibit their recombination, thereby improving the external quantum efficiency (EQE) and photogain of the device with wavelength-immunity, which enable a high responsivity of 0.2 A/W-38 A/W across a broad infrared detection band from 1.55 to 11 µm. Thereafter, a room-temperature detectivity approaching 1 × 109 cm Hz1/2 W-1 is obtained under blackbody radiation. Furthermore, a synergistic effect of electric and light field in the 2D potential well enables high-efficiency polarization-sensitive detection at tunable wavelengths. Our strategy opens up alternative possibilities for easy fabrication, high-performance and multifunctional infrared photodetectors.
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Affiliation(s)
- Hao Jiang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Jintao Fu
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China
| | - Jingxuan Wei
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Shaojuan Li
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
| | - Changbin Nie
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China
| | - Feiying Sun
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China
| | - Qing Yang Steve Wu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore
| | - Mingxiu Liu
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
| | - Zhaogang Dong
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
| | - Xingzhan Wei
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China.
| | - Weibo Gao
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
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15
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Ansari S, Bianconi S, Kang CM, Mohseni H. From Material to Cameras: Low-Dimensional Photodetector Arrays on CMOS. SMALL METHODS 2024; 8:e2300595. [PMID: 37501320 DOI: 10.1002/smtd.202300595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 06/25/2023] [Indexed: 07/29/2023]
Abstract
The last two decades have witnessed a dramatic increase in research on low-dimensional material with exceptional optoelectronic properties. While low-dimensional materials offer exciting new opportunities for imaging, their integration in practical applications has been slow. In fact, most existing reports are based on single-pixel devices that cannot rival the quantity and quality of information provided by massively parallelized mega-pixel imagers based on complementary metal-oxide semiconductor (CMOS) readout electronics. The first goal of this review is to present new opportunities in producing high-resolution cameras using these new materials. New photodetection methods and materials in the field are presented, and the challenges involved in their integration on CMOS chips for making high-resolution cameras are discussed. Practical approaches are then presented to address these challenges and methods to integrate low-dimensional material on CMOS. It is also shown that such integrations could be used for ultra-low noise and massively parallel testing of new material and devices. The second goal of this review is to present the colossal untapped potential of low-dimensional material in enabling the next-generation of low-cost and high-performance cameras. It is proposed that low-dimensional materials have the natural ability to create excellent bio-inspired artificial imaging systems with unique features such as in-pixel computing, multi-band imaging, and curved retinas.
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Affiliation(s)
- Samaneh Ansari
- Electrical and Computer Engneering Department, Northwestern University, Evanston, IL, 60208, USA
| | - Simone Bianconi
- Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, 91109, USA
| | - Chang-Mo Kang
- Photonic Semiconductor Research Center, Korea Photonics Technology Institute, Gwangju, 61007, Republic of Korea
| | - Hooman Mohseni
- Electrical and Computer Engneering Department, Northwestern University, Evanston, IL, 60208, USA
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16
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Wang G, Liu F, Chen R, Wang M, Yin Y, Zhang J, Sa Z, Li P, Wan J, Sun L, Lv Z, Tan Y, Chen F, Yang ZX. Tunable Contacts of Bi 2 O 2 Se Nanosheets MSM Photodetectors by Metal-Assisted Transfer Approach for Self-Powered Near-Infrared Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306363. [PMID: 37817352 DOI: 10.1002/smll.202306363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Revised: 09/08/2023] [Indexed: 10/12/2023]
Abstract
Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal-semiconductor contact is always independent on the work function, which challenges the next-generation optoelectronic devices. In this work, a metal-assisted transfer approach is developed to transfer Bi2 O2 Se nanosheets onto the pre-deposited metal electrodes, benefiting to the tunable metal-semiconductor contact. The success in Bi2 O2 Se nanosheets transfer is contributed to the stronger van der Waals adhesion of metal electrodes than that of growth substrates. With the pre-deposited asymmetric electrodes, the self-powered near-infrared photodetectors are realized, demonstrating low dark current of 0.04 pA, high Ilight /Idark ratio of 380, fast rise and decay times of 4 and 6 ms, respectively, under the illumination of 1310 nm laser. By pre-depositing the metal electrodes on polyimide and glass, high-performance flexible and omnidirectional self-powered near-infrared photodetectors are achieved successfully. This study opens up new opportunities for low-dimensional semiconductors in next-generation high-performance optoelectronic devices.
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Affiliation(s)
- Guangcan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Ruichang Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Mingxu Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Jie Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zixu Sa
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Pengsheng Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Junchen Wan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Li Sun
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zengtao Lv
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng, 252059, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
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17
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Li J, Li Q, Mi J, Xu Z, Xie Y, Tang W, Zhu H, Li L, Tong L. Ultrabroadband High Photoresponsivity at Room Temperature Based on Quasi-1D Pseudogap System (TaSe 4 ) 2 I. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2302886. [PMID: 38064179 PMCID: PMC10870056 DOI: 10.1002/advs.202302886] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2023] [Revised: 11/21/2023] [Indexed: 02/17/2024]
Abstract
Narrow bandgap materials have garnered significant attention within the field of broadband photodetection. However, the performance is impeded by diminished absorption near the bandgap, resulting in a rapid decline in photoresponsivity within the mid-wave infrared (MWIR) and long-wave infrared (LWIR) regions. Furthermore, they mostly worked in cryogenic temperature. Here, without the assistance of any complex structure and special environment, it is realized high responsivity covering ultra-broadband wavelength range (Ultraviolet (UV) to LWIR) in a single quasi-1D pseudogap (PG) system (TaSe4 )2 I nanoribbon, especially high responsivity (From 23.9 to 8.31 A W-1 ) within MWIR and LWIR region at room temperature (RT). Through direct probing the carrier relaxation process with broadband time-resolved transient absorption spectrum measurement, the underlying mechanism of majorly photoconductive effect is revealed, which causes an increased spectral weight extended to PG region. This work paves the way for realizing high-performance uncooled MWIR and LWIR detection by using quasi-1D PG materials.
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Affiliation(s)
- Jialin Li
- State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China
| | - Qing Li
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China
| | - Junjian Mi
- Zhejiang Province Key Laboratory of Quantum Technology and DeviceDepartment of PhysicsZhejiang UniversityHangzhou310027China
| | - Zhuan Xu
- Zhejiang Province Key Laboratory of Quantum Technology and DeviceDepartment of PhysicsZhejiang UniversityHangzhou310027China
| | - Yu Xie
- Research Center for Humanoid SensingZhejiang LabHangzhou311100China
| | - Wei Tang
- State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Huanfeng Zhu
- State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
- Intelligent Optics and Photonics Research CenterJiaxing Research Institute Zhejiang UniversityJiaxing314000China
- Jiaxing Key Laboratory of Photonic Sensing and Intelligent ImagingJiaxing Institute Zhejiang UniversityJiaxing314000China
| | - Linjun Li
- State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
- Intelligent Optics and Photonics Research CenterJiaxing Research Institute Zhejiang UniversityJiaxing314000China
- Jiaxing Key Laboratory of Photonic Sensing and Intelligent ImagingJiaxing Institute Zhejiang UniversityJiaxing314000China
| | - Limin Tong
- State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
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18
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Kim J, Lee J, Lee JM, Facchetti A, Marks TJ, Park SK. Recent Advances in Low-Dimensional Nanomaterials for Photodetectors. SMALL METHODS 2024; 8:e2300246. [PMID: 37203281 DOI: 10.1002/smtd.202300246] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/21/2023] [Indexed: 05/20/2023]
Abstract
New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.
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Affiliation(s)
- Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Junho Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Jong-Min Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
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Meng D, Xu M, Li S, Ganesan M, Ruan X, Ravi SK, Cui X. Functional MXenes: Progress and Perspectives on Synthetic Strategies and Structure-Property Interplay for Next-Generation Technologies. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304483. [PMID: 37730973 DOI: 10.1002/smll.202304483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 07/11/2023] [Indexed: 09/22/2023]
Abstract
MXenes are a class of 2D materials that include layered transition metal carbides, nitrides, and carbonitrides. Since their inception in 2011, they have garnered significant attention due to their diverse compositions, unique structures, and extraordinary properties, such as high specific surface areas and excellent electrical conductivity. This versatility has opened up immense potential in various fields, catalyzing a surge in MXene research and leading to note worthy advancements. This review offers an in-depth overview of the evolution of MXenes over the past 5 years, with an emphasis on synthetic strategies, structure-property relationships, and technological prospects. A classification scheme for MXene structures based on entropy is presented and an updated summary of the elemental constituents of the MXene family is provided, as documented in recent literature. Delving into the microscopic structure and synthesis routes, the intricate structure-property relationships are explored at the nano/micro level that dictate the macroscopic applications of MXenes. Through an extensive review of the latest representative works, the utilization of MXenes in energy, environmental, electronic, and biomedical fields is showcased, offering a glimpse into the current technological bottlenecks, such asstability, scalability, and device integration. Moreover, potential pathways for advancing MXenes toward next-generation technologies are highlighted.
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Affiliation(s)
- Depeng Meng
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Minghua Xu
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Shijie Li
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Muthusankar Ganesan
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, SAR, Hong Kong
| | - Xiaowen Ruan
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, SAR, Hong Kong
| | - Sai Kishore Ravi
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, SAR, Hong Kong
| | - Xiaoqiang Cui
- State Key Laboratory of Automotive Simulation and Control, School of Materials Science and Engineering, Key Laboratory of Automobile Materials of MOE, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
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Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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21
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Liu C, Vella J, Eedugurala N, Mahalingavelar P, Bills T, Salcido‐Santacruz B, Sfeir MY, Azoulay JD. Ultrasensitive Room Temperature Infrared Photodetection Using a Narrow Bandgap Conjugated Polymer. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2304077. [PMID: 37888896 PMCID: PMC10754133 DOI: 10.1002/advs.202304077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 09/04/2023] [Indexed: 10/28/2023]
Abstract
Photodetectors operating across the short-, mid-, and long-wave infrared (SWIR-LWIR, λ = 1-14 µm) underpin modern science, technology, and society in profound ways. Narrow bandgap semiconductors that form the basis for these devices require complex manufacturing, high costs, cooling, and lack compatibility with silicon electronics, attributes that remain prohibitive for their widespread usage and the development of emerging technologies. Here, a photoconductive detector, fabricated using a solution-processed narrow bandgap conjugated polymer is demonstrated that enables charge carrier generation in the infrared and ultrasensitive SWIR-LWIR photodetection at room temperature. Devices demonstrate an ultralow electronic noise that enables outstanding performance from a simple, monolithic device enabling a high detectivity (D*, the figure of merit for detector sensitivity) >2.44 × 109 Jones (cm Hz1/2 W-1 ) using the ultralow flux of a blackbody that mirrors the background emission of objects. These attributes, ease of fabrication, low dark current characteristics, and highly sensitive operation overcome major limitations inherent within modern narrow-bandgap semiconductors, demonstrate practical utility, and suggest that uncooled detectivities superior to many inorganic devices can be achieved at high operating temperatures.
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Affiliation(s)
- Chih‐Ting Liu
- School of Chemistry and Biochemistry and School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Jarrett Vella
- Sensor DirectorateAir Force Research LaboratoryWright‐Patterson Air Force BaseDaytonOH45433USA
| | - Naresh Eedugurala
- School of Chemistry and Biochemistry and School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Paramasivam Mahalingavelar
- School of Chemistry and Biochemistry and School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Tyler Bills
- School of Chemistry and Biochemistry and School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Bernardo Salcido‐Santacruz
- Photonics InitiativeAdvanced Science Research CenterCity University of New YorkNew YorkNY10031USA
- Department of ChemistryThe Graduate CenterCity University of New YorkNew YorkNY10016USA
| | - Matthew Y. Sfeir
- Photonics InitiativeAdvanced Science Research CenterCity University of New YorkNew YorkNY10031USA
- Department of ChemistryThe Graduate CenterCity University of New YorkNew YorkNY10016USA
- Department of PhysicsThe Graduate CenterCity University of New YorkNew YorkNY10016USA
| | - Jason D. Azoulay
- School of Chemistry and Biochemistry and School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
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22
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Hu H, Zhen W, Yue Z, Niu R, Xu F, Zhu W, Jiao K, Long M, Xi C, Zhu W, Zhang C. A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices. NANOSCALE ADVANCES 2023; 5:6210-6215. [PMID: 37941949 PMCID: PMC10629003 DOI: 10.1039/d3na00525a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 10/05/2023] [Indexed: 11/10/2023]
Abstract
Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W-1 and specific detectivity of 2.25 × 1012 Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities.
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Affiliation(s)
- Huijie Hu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Science Island Branch of Graduate School, University of Science and Technology of China Hefei 230026 China
| | - Weili Zhen
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Zhilai Yue
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Rui Niu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Feng Xu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wanli Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Keke Jiao
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
| | - Chuanying Xi
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wenka Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Changjin Zhang
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University Nanjing 210093 China
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23
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Liu J, Liu P, Shi T, Ke M, Xiong K, Liu Y, Chen L, Zhang L, Liang X, Li H, Lu S, Lan X, Niu G, Zhang J, Fei P, Gao L, Tang J. Flexible and broadband colloidal quantum dots photodiode array for pixel-level X-ray to near-infrared image fusion. Nat Commun 2023; 14:5352. [PMID: 37660051 PMCID: PMC10475073 DOI: 10.1038/s41467-023-40620-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Accepted: 08/02/2023] [Indexed: 09/04/2023] Open
Abstract
Combining information from multispectral images into a fused image is informative and beneficial for human or machine perception. Currently, multiple photodetectors with different response bands are used, which require complicated algorithms and systems to solve the pixel and position mismatch problem. An ideal solution would be pixel-level multispectral image fusion, which involves multispectral image using the same photodetector and circumventing the mismatch problem. Here we presented the potential of pixel-level multispectral image fusion utilizing colloidal quantum dots photodiode array, with a broadband response range from X-ray to near infrared and excellent tolerance for bending and X-ray irradiation. The colloidal quantum dots photodiode array showed a specific detectivity exceeding 1012 Jones in visible and near infrared range and a favorable volume sensitivity of approximately 2 × 105 μC Gy-1 cm-3 for X-ray irradiation. To showcase the advantages of pixel-level multispectral image fusion, we imaged a capsule enfolding an iron wire and soft plastic, successfully revealing internal information through an X-ray to near infrared fused image.
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Affiliation(s)
- Jing Liu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China
| | - Peilin Liu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Tailong Shi
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Mo Ke
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Kao Xiong
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Yuxuan Liu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Long Chen
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Linxiang Zhang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Xinyi Liang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Hao Li
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Shuaicheng Lu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
| | - Jianbing Zhang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China
| | - Peng Fei
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China.
- Optical Valley Laboratory, 430074, Wuhan, P. R. China.
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China.
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China.
- Optical Valley Laboratory, 430074, Wuhan, P. R. China.
- National Engineering Research Center for Laser Processing, 1037 Luoyu Road, 430074, Wuhan, P. R. China.
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24
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Zhu H, Fan L, Wang K, Liu H, Zhang J, Yan S. Progress in the Synthesis and Application of Tellurium Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2057. [PMID: 37513066 PMCID: PMC10384241 DOI: 10.3390/nano13142057] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Revised: 07/04/2023] [Accepted: 07/04/2023] [Indexed: 07/30/2023]
Abstract
In recent decades, low-dimensional nanodevices have shown great potential to extend Moore's Law. The n-type semiconductors already have several candidate materials for semiconductors with high carrier transport and device performance, but the development of their p-type counterparts remains a challenge. As a p-type narrow bandgap semiconductor, tellurium nanostructure has outstanding electrical properties, controllable bandgap, and good environmental stability. With the addition of methods for synthesizing various emerging tellurium nanostructures with controllable size, shape, and structure, tellurium nanomaterials show great application prospects in next-generation electronics and optoelectronic devices. For tellurium-based nanomaterials, scanning electron microscopy and transmission electron microscopy are the main characterization methods for their morphology. In this paper, the controllable synthesis methods of different tellurium nanostructures are reviewed, and the latest progress in the application of tellurium nanostructures is summarized. The applications of tellurium nanostructures in electronics and optoelectronics, including field-effect transistors, photodetectors, and sensors, are highlighted. Finally, the future challenges, opportunities, and development directions of tellurium nanomaterials are prospected.
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Affiliation(s)
- Hongliang Zhu
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Fan
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Kaili Wang
- School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Hao Liu
- School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jiawei Zhang
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Shancheng Yan
- School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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25
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Dai M, Wang C, Qiang B, Jin Y, Ye M, Wang F, Sun F, Zhang X, Luo Y, Wang QJ. Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity. Nat Commun 2023; 14:3421. [PMID: 37296149 DOI: 10.1038/s41467-023-39071-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 05/22/2023] [Indexed: 06/12/2023] Open
Abstract
Filter-free miniaturized polarization-sensitive photodetectors have important applications in the next-generation on-chip polarimeters. However, their polarization sensitivity is thus far limited by the intrinsic low diattenuation and inefficient photon-to-electron conversion. Here, we implement experimentally a miniaturized detector based on one-dimensional tellurium nanoribbon, which can significantly improve the photothermoelectric responses by translating the polarization-sensitive absorption into a large temperature gradient together with the finite-size effect of a perfect plasmonic absorber. Our devices exhibit a zero-bias responsivity of 410 V/W and an ultrahigh polarization ratio (2.5 × 104), as well as a peak polarization angle sensitivity of 7.10 V/W•degree, which is one order of magnitude higher than those reported in the literature. Full linear polarimetry detection is also achieved with the proposed device in a simple geometrical configuration. Polarization-coded communication and optical strain measurement are demonstrated showing the great potential of the proposed devices. Our work presents a feasible solution for miniaturized room-temperature infrared photodetectors with ultrahigh polarization sensitivity.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bo Qiang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yuhao Jin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fakun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xuran Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yu Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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26
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Hu Y, Song X, Jia D, Su W, Lv X, Li L, Li X, Yan Y, Jiang Y, Xia C. Strong interlayer coupling in p-Te/n-CdSe van der Waals heterojunction for self-powered photodetectors with fast speed and high responsivity. OPTICS EXPRESS 2023; 31:19804-19817. [PMID: 37381388 DOI: 10.1364/oe.489029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Accepted: 05/09/2023] [Indexed: 06/30/2023]
Abstract
Self-driven photodetectors, which can detect optical signals without external voltage bias, are highly attractive in the field of low-power wearable electronics and internet of things. However, currently reported self-driven photodetectors based on van der Waals heterojunctions (vdWHs) are generally limited by low responsivity due to poor light absorption and insufficient photogain. Here, we report p-Te/n-CdSe vdWHs utilizing non-layered CdSe nanobelts as efficient light absorption layer and high mobility Te as ultrafast hole transporting layer. Benefiting from strong interlayer coupling, the Te/CdSe vdWHs exhibit stable and excellent self-powered characteristics, including ultrahigh responsivity of 0.94 A W-1, remarkable detectivity of 8.36 × 1012 Jones at optical power density of 1.18 mW cm-2 under illumination of 405 nm laser, fast response speed of 24 µs, large light on/off ratio exceeding 105, as well as broadband photoresponse (405-1064 nm), which surpass most of the reported vdWHs photodetectors. In addition, the devices display superior photovoltaic characteristics under 532 nm illumination, such as large Voc of 0.55 V, and ultrahigh Isc of 2.73 µA. These results demonstrate the construction of 2D/non-layered semiconductor vdWHs with strong interlayer coupling is a promising strategy for high-performance and low-power consumption devices.
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27
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Fu L, He Y, Zheng J, Hu Y, Xue J, Li S, Ge C, Yang X, Peng M, Li K, Zeng X, Wei J, Xue DJ, Song H, Chen C, Tang J. Te x Se 1-x Photodiode Shortwave Infrared Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211522. [PMID: 36972712 DOI: 10.1002/adma.202211522] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Revised: 02/27/2023] [Indexed: 06/16/2023]
Abstract
Short-wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short-wave infrared cameras such as InGaAs have the disadvantage of complex heterogeneous integration with complementary metal-oxide-semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, a low-cost, high-performance, and high-stability Tex Se1- x short-wave infrared photodiode detector is reported. The Tex Se1- x thin film is fabricated through CMOS-compatible low-temperature evaporation and post-annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad-spectrum response of 300-1600 nm, a room-temperature specific detectivity of 1.0 × 1010 Jones, a -3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te-based photodiode devices and a dark current density 7 orders of magnitude smaller than Te-based photoconductive and field-effect transistor devices. With a simple Si3 N4 packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized Tex Se1- x photodiode detector, the applications in material identification and masking imaging is demonstrated. This work paves a new way for CMOS-compatible infrared imaging chips.
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Affiliation(s)
- Liuchong Fu
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Yuming He
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiajia Zheng
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Yuxuan Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiayou Xue
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Sen Li
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Ciyu Ge
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Xuke Yang
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Xiangbin Zeng
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jinchao Wei
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
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28
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Zhang Y, Yang X, Dai Y, Yu W, Yang L, Zhang J, Yu Q, Dong Z, Huang L, Chen C, Hou X, Wang X, Li J, Zhang K. Ternary GePdS 3: 1D van der Waals Nanowires for Integration of High-Performance Flexible Photodetectors. ACS NANO 2023; 17:8743-8754. [PMID: 37104062 DOI: 10.1021/acsnano.3c01977] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
One-dimensional (1D) van der Waals (vdW) materials are anticipated to leverage for high-performance, giant polarized, and hybrid-dimension photodetection owing to their dangling-bond free surface, intrinsic crystal structure, and weak vdW interaction. However, only a few related explorations have been conducted, especially in the field of flexible and integrated applications. Here, high-quality 1D vdW GePdS3 nanowires were synthesized and proven to be an n-type semiconductor. The Raman vibration and band gap (1.37-1.68 eV, varying from bulk to single chain) of GePdS3 were systemically studied by experimental and theoretical methods. The photodetector based on a single GePdS3 nanowire possesses fast photoresponse at a broadband spectrum of 254-1550 nm. The highest responsivity and detectivity reach up to ∼219 A/W and ∼2.7 × 1010 Jones (under 254 nm light illumination), respectively. Furthermore, an image sensor with 6 × 6 pixels based on GePdS3 nanowires is integrated on a flexible polyethylene terephthalate (PET) substrate and exhibits sensitive and homogeneous detection at 808 nm light. These results indicate that the ternary noble metal chalcogenides show great potential in flexible and broadband optoelectronics applications.
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Affiliation(s)
- Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Xiaoxin Yang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
| | - Yongping Dai
- Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Guangdong 523000, P. R. China
- Institute of Physics, Chinese Academy of Science, Beijing 100190, P. R. China
| | - Liu Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Qiang Yu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Zhuo Dong
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Luyi Huang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Cheng Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Xingang Hou
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
| | - Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
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29
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Lu J, He Y, Ma C, Ye Q, Yi H, Zheng Z, Yao J, Yang G. Ultrabroadband Imaging Based on Wafer-Scale Tellurene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211562. [PMID: 36893428 DOI: 10.1002/adma.202211562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2022] [Revised: 03/02/2023] [Indexed: 05/19/2023]
Abstract
High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized. Taking advantage of the surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted exciton separation, in situ formation of out-of-plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron-hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide-spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 107 A W-1 , 8.2 × 109 % and 4.5 × 1015 Jones. An ultrabroadband imager is demonstrated and high-resolution photoelectric imaging is realized. The proof-of-concept wafer-scale tellurene-based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of an advanced 2D imaging platform toward next-generation intelligent equipment.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yan He
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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30
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Zha J, Shi S, Chaturvedi A, Huang H, Yang P, Yao Y, Li S, Xia Y, Zhang Z, Wang W, Wang H, Wang S, Yuan Z, Yang Z, He Q, Tai H, Teo EHT, Yu H, Ho JC, Wang Z, Zhang H, Tan C. Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211598. [PMID: 36857506 DOI: 10.1002/adma.202211598] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/16/2023] [Indexed: 05/19/2023]
Abstract
Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2 S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge.
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Affiliation(s)
- Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Apoorva Chaturvedi
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Peng Yang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Huide Wang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Shaocong Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhen Yuan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong, 999077, P. R. China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Huiling Tai
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China
| | - Edwin Hang Tong Teo
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
- School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Hongyu Yu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
| | - Chaoliang Tan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
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31
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Yu Y, Peng M, Zhong F, Wang Z, Ge X, Chen H, Guo J, Wang Y, Chen Y, Xu T, Zhao T, He T, Zhang K, Wu F, Chen C, Dai J, Hu W. Synergistic effects of extrinsic photoconduction and photogating in a short-wavelength ZrS 3 infrared photodetector. MATERIALS HORIZONS 2023. [PMID: 37092183 DOI: 10.1039/d2mh01495e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Two-dimensional (2D) material-based photodetectors, especially those working in the infrared band, have shown great application potential in the thermal imaging, optical communication, and medicine fields. Designing 2D material photodetectors with broadened detection band and enhanced responsivity has become an attractive but challenging research direction. To solve this issue, we report a zirconium trisulfide (ZrS3) infrared photodetector with enhanced and broadened response with the assistance of the synergistic effects of extrinsic photoconduction and photogating effect. The ZrS3 photodetectors can detect infrared light up to 2 μm by extrinsic photoconduction and exhibit a responsivity of 100 mA W-1 under 1550 nm illumination. Furthermore, the ZrS3 infrared photodetectors with an oxide layer show a triple enhanced responsivity due to the photogating effect. Additionally, the infrared imaging capability of the ZrS3 infrared photodetectors is also demonstrated. This work provides a potential way to extend the response range and improve the responsivity for nanomaterial-based photodetectors at the same time.
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Affiliation(s)
- Yiye Yu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Fang Zhong
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Hao Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yang Wang
- Fudan University, Shanghai 200433, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Tengfei Xu
- Fudan University, Shanghai 200433, China
| | - Tiange Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Sun Yat-Sen University, Guangzhou 510275, China
| | - Ting He
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.
| | - Kun Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Feng Wu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Changqing Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Jiangnan Dai
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
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32
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Wang F, Zhang T, Xie R, Wang Z, Hu W. How to characterize figures of merit of two-dimensional photodetectors. Nat Commun 2023; 14:2224. [PMID: 37076481 PMCID: PMC10115793 DOI: 10.1038/s41467-023-37635-1] [Citation(s) in RCA: 35] [Impact Index Per Article: 35.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Accepted: 03/24/2023] [Indexed: 04/21/2023] Open
Abstract
Photodetectors based on two-dimensional (2D) materials have been the focus of intensive research and development over the past decade. However, a gap has long persisted between fundamental research and mature applications. One of the main reasons behind this gap has been the lack of a practical and unified approach for the characterization of their figures of merit, which should be compatible with the traditional performance evaluation system of photodetectors. This is essential to determine the degree of compatibility of laboratory prototypes with industrial technologies. Here we propose general guidelines for the characterization of the figures of merit of 2D photodetectors and analyze common situations when the specific detectivity, responsivity, dark current, and speed can be misestimated. Our guidelines should help improve the standardization and industrial compatibility of 2D photodetectors.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
- University of Chinese Academy of Sciences, Beijing, 100049, China.
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33
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Luo Z, Xu H, Gao W, Yang M, He Y, Huang Z, Yao J, Zhang M, Dong H, Zhao Y, Zheng Z, Li J. High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS 2 /Te Tunneling Heterostructure. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207615. [PMID: 36605013 DOI: 10.1002/smll.202207615] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Revised: 12/23/2022] [Indexed: 06/17/2023]
Abstract
Next-generation imaging systems require photodetectors with high sensitivity, polarization sensitivity, miniaturization, and integration. By virtue of their intriguing attributes, emerging 2D materials offer innovative avenues to meet these requirements. However, the current performance of 2D photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, the lack of photoconductive gain, and insufficient photocarrier collection. Here, a tunneling dominant imaging photodetector based on WS2 /Te heterostructure is reported. This device demonstrates competitive performance, including a remarkable responsivity of 402 A W-1 , an outstanding detectivity of 9.28 × 1013 Jones, a fast rise/decay time of 1.7/3.2 ms, and a high photocurrent anisotropic ratio of 2.5. These outstanding performances can be attributed to the type-I band alignment with carrier transmission barriers and photoinduced tunneling mechanism, allowing reduced interfacial trapping effect, effective photoconductive gains, and anisotropic collection of photocarriers. Significantly, the constructed photodetector is successfully integrated into a polarized light imaging system and an ultra-weak light imaging system to illustrate the imaging capability. These results suggest the promising application prospect of the device in future imaging systems.
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Affiliation(s)
- Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Huakai Xu
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Yan He
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Menglong Zhang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Huafeng Dong
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jingbo Li
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, Guangdong, 510631, P. R. China
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34
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Tang Q, Zhong F, Li Q, Weng J, Li J, Lu H, Wu H, Liu S, Wang J, Deng K, Xiao Y, Wang Z, He T. Infrared Photodetection from 2D/3D van der Waals Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1169. [PMID: 37049263 PMCID: PMC10096675 DOI: 10.3390/nano13071169] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 03/20/2023] [Accepted: 03/21/2023] [Indexed: 06/19/2023]
Abstract
An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.
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Affiliation(s)
- Qianying Tang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fang Zhong
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Qing Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jialu Weng
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junzhe Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hangyu Lu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haitao Wu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuning Liu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiacheng Wang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ke Deng
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yunlong Xiao
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Zhen Wang
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Ting He
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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Li L, Fang S, Yu R, Chen R, Wang H, Gao X, Zha W, Yu X, Jiang L, Zhu D, Xiong Y, Liao YH, Zheng D, Yang WX, Miao J. Fast near-infrared photodetectors from p-type SnSe nanoribbons. NANOTECHNOLOGY 2023; 34:245202. [PMID: 36881863 DOI: 10.1088/1361-6528/acc1eb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 03/07/2023] [Indexed: 06/18/2023]
Abstract
Low-dimensional tin selenide nanoribbons (SnSe NRs) show a wide range of applications in optoelectronics fields such as optical switches, photodetectors, and photovoltaic devices due to the suitable band gap, strong light-matter interaction, and high carrier mobility. However, it is still challenging to grow high-quality SnSe NRs for high-performance photodetectors so far. In this work, we successfully synthesized high-quality p-type SnSe NRs by chemical vapor deposition and then fabricated near-infrared photodetectors. The SnSe NR photodetectors show a high responsivity of 376.71 A W-1, external quantum efficiency of 5.65 × 104%, and detectivity of 8.66 × 1011Jones. In addition, the devices show a fast response time with rise and fall time of up to 43μs and 57μs, respectively. Furthermore, the spatially resolved scanning photocurrent mapping shows very strong photocurrent at the metal-semiconductor contact regions, as well as fast generation-recombination photocurrent signals. This work demonstrated that p-type SnSe NRs are promising material candidates for broad-spectrum and fast-response optoelectronic devices.
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Affiliation(s)
- Long Li
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Suhui Fang
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Ranran Yu
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Ruoling Chen
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
- Nantong Academy of Intelligent Sensing, No. 60 Chongzhou Road, Nantong 226009, People's Republic of China
| | - Xiaofeng Gao
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Wenjing Zha
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Xiangxiang Yu
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Long Jiang
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Desheng Zhu
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Yan Xiong
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Yan-Hua Liao
- School of Mathematics and Physics, Hubei Polytechnic University, Huangshi 435003, People's Republic of China
| | - Dingshan Zheng
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Wen-Xing Yang
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
- Nantong Academy of Intelligent Sensing, No. 60 Chongzhou Road, Nantong 226009, People's Republic of China
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36
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Li J, Zhang J, Chu J, Yang L, Zhao X, Zhang Y, Liu T, Lu Y, Chen C, Hou X, Fang L, Xu Y, Wang J, Zhang K. Tailoring the epitaxial growth of oriented Te nanoribbon arrays. iScience 2023; 26:106177. [PMID: 36895655 PMCID: PMC9988655 DOI: 10.1016/j.isci.2023.106177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 01/13/2023] [Accepted: 02/07/2023] [Indexed: 02/11/2023] Open
Abstract
As an elemental semiconductor, tellurium (Te) has been famous for its high hole-mobility, excellent ambient stability and topological states. Here, we realize the controllable synthesis of horizontal Te nanoribbon arrays (TRAs) with an angular interval of 60°on mica substrates by physical vapor deposition strategy. The growth of Te nanoribbons (TRs) is driven by two factors, where the intrinsic quasi-one-dimensional spiral chain structure promotes the elongation of their length; the epitaxy relationship between [110] direction of Te and [110] direction of mica facilitates the oriented growth and the expansion of their width. The bending of TRs which have not been reported is induced by grain boundary. Field-effect transistors based on TRs demonstrate high mobility and on/off ratio corresponding to 397 cm2 V-1 s-1 and 1.5×105, respectively. These phenomena supply an opportunity to deep insight into the vapor-transport synthesis of low-dimensional Te and explore its underlying application in monolithic integration.
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Affiliation(s)
- Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Junwei Chu
- Xi'an Institute of Applied Optics, No.9, West Section of Electron Third Road, Shannxi Xi'an 710065, China
| | - Liu Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Xinxin Zhao
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230031, China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Tong Liu
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Yang Lu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Cheng Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Xingang Hou
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Long Fang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,College of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot 010051, China
| | - Yijun Xu
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Junyong Wang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
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Zhao T, Guo J, Li T, Wang Z, Peng M, Zhong F, Chen Y, Yu Y, Xu T, Xie R, Gao P, Wang X, Hu W. Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives. Chem Soc Rev 2023; 52:1650-1671. [PMID: 36744507 DOI: 10.1039/d2cs00657j] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations. This review focuses on the existing strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering to deliver wafer-scale 2D materials for integrated electronics and photonics.
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Affiliation(s)
- Tiange Zhao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China. .,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Taotao Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Pingqi Gao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. .,School of Integrated Circuits, Nanjing University, Suzhou, China.,Suzhou Laboratory, Suzhou, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
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38
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Mid-infrared single-pixel imaging at the single-photon level. Nat Commun 2023; 14:1073. [PMID: 36841860 PMCID: PMC9968282 DOI: 10.1038/s41467-023-36815-3] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2022] [Accepted: 02/16/2023] [Indexed: 02/27/2023] Open
Abstract
Single-pixel cameras have recently emerged as promising alternatives to multi-pixel sensors due to reduced costs and superior durability, which are particularly attractive for mid-infrared (MIR) imaging pertinent to applications including industry inspection and biomedical diagnosis. To date, MIR single-pixel photon-sparse imaging has yet been realized, which urgently calls for high-sensitivity optical detectors and high-fidelity spatial modulators. Here, we demonstrate a MIR single-photon computational imaging with a single-element silicon detector. The underlying methodology relies on nonlinear structured detection, where encoded time-varying pump patterns are optically imprinted onto a MIR object image through sum-frequency generation. Simultaneously, the MIR radiation is spectrally translated into the visible region, thus permitting infrared single-photon upconversion detection. Then, the use of advanced algorithms of compressed sensing and deep learning allows us to reconstruct MIR images under sub-Nyquist sampling and photon-starving illumination. The presented paradigm of single-pixel upconversion imaging is featured with single-pixel simplicity, single-photon sensitivity, and room-temperature operation, which would establish a new path for sensitive imaging at longer infrared wavelengths or terahertz frequencies, where high-sensitivity photon counters and high-fidelity spatial modulators are typically hard to access.
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39
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Yang B, Gao W, Li H, Gao P, Yang M, Pan Y, Wang C, Yang Y, Huo N, Zheng Z, Li J. Visible and infrared photodiode based on γ-InSe/Ge van der Waals heterojunction for polarized detection and imaging. NANOSCALE 2023; 15:3520-3531. [PMID: 36723020 DOI: 10.1039/d2nr06642d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Broadband photodetectors are a category of optoelectronic devices that have important applications in modern communication information. γ-InSe is a newly developed two-dimensional (2D) layered semiconductor with an air-stable and low-symmetry crystal structure that is suitable for polarization-sensitive photodetection. Herein, we report a P-N photodiode based on 3D Ge/2D γ-InSe van der Waals heterojunction (vdWH). A built-in electric field is introduced at the p-Ge/n-InSe interface to suppress the dark current and accelerate the separation of photogenerated carriers. Moreover, the heterojunction belongs to the accumulation mode with a well-designed type-II band arrangement, which is suitable for the fast separation of photogenerated carriers. Driven by these advantages, the device exhibits excellent photovoltaic performance within the detection range of 400 to 1600 nm and shows a double photocurrent peak at around 405 and 1550 nm. In particular, the responsivity (R) is up to 9.78 A W-1 and the specific detectivity (D*) reaches 5.38 × 1011 Jones with a fast response speed of 46/32 μs under a 1550 nm laser. Under blackbody radiation, the room temperature R and D* in the mid-wavelength infrared region are 0.203 A W-1 and 5.6 × 108 Jones, respectively. Moreover, polarization-sensitive light detection from 405-1550 nm was achieved, with the dichroism ratios of 1.44, 3.01, 1.71, 1.41 and 1.34 at 405, 635, 808, 1310 and 1550 nm, respectively. In addition, high-resolution single-pixel imaging capability is demonstrated at visible and near-infrared wavelengths. This work reveals the great potential of the γ-InSe/Ge photodiode for high-performance, broadband, air-stable and polarization-sensitive photodetection.
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Affiliation(s)
- Baoxiang Yang
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Wei Gao
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Hengyi Li
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Peng Gao
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Yuan Pan
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Chuanglei Wang
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Yani Yang
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Nengjie Huo
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
| | - Jingbo Li
- School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China.
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Li J, Cao D, Chen F, Wu D, Yan Y, Du J, Yang J, Tian Y, Li X, Lin P. Polarity-Reversible Te/WSe 2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53202-53212. [PMID: 36395442 DOI: 10.1021/acsami.2c17331] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
As a p-type elemental material with high carrier mobility, superior ambient stability, and anisotropic crystal structure, emerging two-dimensional (2D) tellurium (Te) has been considered a successor to black phosphorus for developing infrared-related optoelectronics. Nevertheless, the lack of a scalable thickness engineering strategy remains an obstacle to unleashing its full potential. Te-based electronics with logic functions are also less explored. Herein, we propose a novel wet-chemical thinning method for 2D Te, with the merits of scalability and site-specific thickness patterning capability. A polarity-switchable van der Waals (vdW) heterodiode with a high rectification ratio of 2.4 × 103 is realized on the basis of Te/WSe2. The electronic application of this unique characteristic is demonstrated by fabricating a logic half-wave rectifier, in which the rectifying states are switchable via electrostatic gating control. Besides, the narrow band gap of Te endows the device with a broad spectral response from visible to short-wave infrared. The room-temperature responsivity reaches 5.2 A W-1 at the telecom wavelength of 1.55 μm, with an external quantum efficiency of 420% and detectivity of 6.8 × 109 Jones. In particular, owing to the intrinsic in-plane anisotropy of Te, the device exhibits a favorable photocurrent anisotropic ratio of ∼3. Our study demonstrates the enormous potential of Te for novel electronics, promoting the development of elemental 2D materials.
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Affiliation(s)
- Juanjuan Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Dingwen Cao
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Fangfang Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Yong Yan
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Junli Du
- State Grid Henan Electric Power Research Institute, Zhengzhou, Henan 450052, People's Republic of China
| | - Jinke Yang
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Yongtao Tian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
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Liu K, Wang X, Su H, Chen X, Wang D, Guo J, Shao L, Bao W, Chen H. Large-Scale MoS 2 Pixel Array for Imaging Sensor. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4118. [PMID: 36500741 PMCID: PMC9739261 DOI: 10.3390/nano12234118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 11/15/2022] [Accepted: 11/18/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional molybdenum disulfide (MoS2) has been extensively investigated in the field of optoelectronic devices. However, most reported MoS2 phototransistors are fabricated using the mechanical exfoliation method to obtain micro-scale MoS2 flakes, which is laboratory- feasible but not practical for the future industrial fabrication of large-scale pixel arrays. Recently, wafer-scale MoS2 growth has been rapidly developed, but few results of uniform large-scale photoelectric devices were reported. Here, we designed a 12 × 12 pixels pixel array image sensor fabricated on a 2 cm × 2 cm monolayer MoS2 film grown by chemical vapor deposition (CVD). The photogating effect induced by the formation of trap states ensures a high photoresponsivity of 364 AW-1, which is considerably superior to traditional CMOS sensors (≈0.1 AW-1). Experimental results also show highly uniform photoelectric properties in this array. Finally, the concatenated image obtained by laser lighting stencil and photolithography mask demonstrates the promising potential of 2D MoS2 for future optoelectrical applications.
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Affiliation(s)
- Kang Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Xinyu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Hesheng Su
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Xinyu Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Die Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Jing Guo
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Lei Shao
- School of Electronic Information, Soochow University, Suzhou 215006, China
| | - Wenzhong Bao
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Honglei Chen
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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Anisotropic charge trapping in phototransistors unlocks ultrasensitive polarimetry for bionic navigation. Nat Commun 2022; 13:6629. [PMID: 36333339 PMCID: PMC9636252 DOI: 10.1038/s41467-022-34421-3] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 10/25/2022] [Indexed: 11/06/2022] Open
Abstract
Being able to probe the polarization states of light is crucial for applications from medical diagnostics and intelligent recognition to information encryption and bio-inspired navigation. Current state-of-the-art polarimeters based on anisotropic semiconductors enable direct linear dichroism photodetection without the need for bulky and complex external optics. However, their polarization sensitivity is restricted by the inherent optical anisotropy, leading to low dichroic ratios of typically smaller than ten. Here, we unveil an effective and general strategy to achieve more than 2,000-fold enhanced polarization sensitivity by exploiting an anisotropic charge trapping effect in organic phototransistors. The polarization-dependent trapping of photogenerated charge carriers provides an anisotropic photo-induced gate bias for current amplification, which has resulted in a record-high dichroic ratio of >104, reaching over the extinction ratios of commercial polarizers. These findings further enable the demonstration of an on-chip polarizer-free bionic celestial compass for skylight-based polarization navigation. Our results offer a fundamental design principle and an effective route for the development of next-generation highly polarization-sensitive optoelectronics.
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43
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Chen F, Cao D, Li J, Yan Y, Wu D, Zhang C, Gao L, Guo Z, Ma S, Yu H, Lin P. Solution-processed thickness engineering of tellurene for field-effect transistors and polarized infrared photodetectors. Front Chem 2022; 10:1046010. [PMID: 36311419 PMCID: PMC9606353 DOI: 10.3389/fchem.2022.1046010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2022] [Accepted: 10/04/2022] [Indexed: 11/16/2022] Open
Abstract
Research on elemental 2D materials has been experiencing a renaissance in the past few years. Of particular interest is tellurium (Te), which possesses many exceptional properties for nanoelectronics, photonics, and beyond. Nevertheless, the lack of a scalable approach for the thickness engineering and the local properties modulation remains a major obstacle to unleashing its full device potential. Herein, a solution-processed oxidative etching strategy for post-growth thickness engineering is proposed by leveraging the moderate chemical reactivity of Te. Large-area ultrathin nanosheets with well-preserved morphologies could be readily obtained with appropriate oxidizing agents, such as HNO2, H2O2, and KMnO4. Compared with the conventional physical thinning approaches, this method exhibits critical merits of high efficiency, easy scalability, and the capability of site-specific thickness patterning. The thickness reduction leads to substantially improved gate tunability of field-effect transistors with an enhanced current switching ratio of ∼103, promoting the applications of Te in future logic electronics. The response spectrum of Te phototransistors covers the full range of short-wave infrared wavelength (1-3 μm), and the room-temperature responsivity and detectivity reach 0.96 AW-1 and 2.2 × 109 Jones at the telecom wavelength of 1.55 μm, together with a favorable photocurrent anisotropic ratio of ∼2.9. Our study offers a new approach to tackling the thickness engineering issue for solution-grown Te, which could help realize the full device potential of this emerging p-type 2D material.
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Affiliation(s)
- Fangfang Chen
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Dingwen Cao
- School of Physics, Henan Normal University, XinXiang, China
| | - Juanjuan Li
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Yong Yan
- School of Physics, Henan Normal University, XinXiang, China
| | - Di Wu
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Cheng Zhang
- School of Materials Science and Engineering, National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, Henan University of Science and Technology, Luoyang, China
| | - Lenan Gao
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Zhaowei Guo
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Shihong Ma
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, China
| | - Pei Lin
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
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44
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Mu G, Rao T, Zhang S, Wen C, Chen M, Hao Q, Tang X. Ultrasensitive Colloidal Quantum-Dot Upconverters for Extended Short-Wave Infrared. ACS APPLIED MATERIALS & INTERFACES 2022; 14:45553-45561. [PMID: 36166596 DOI: 10.1021/acsami.2c12002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Infrared-to-visible upconverters converting low-energy infrared to higher-energy visible light without bringing in complicated readout integrated circuits have triggered enormous excitement. However, existing upconverters suffer from limited sensing wavelengths, low photon-to-photon (p-p) efficiency, and high minimum detectable infrared power. Here, we reported the colloidal quantum-dot (CQD) upconverters with unprecedented performance. By using HgTe CQDs as the sensing layer, the operation spectral ranges of the upconverters are, for the first time, extended to short-wave infrared. More importantly, the resistance-area products of the HgTe CQD photodetectors are carefully optimized by interface engineering to match with the visible light-emitting diodes so that the quantum efficiency and sensitivity of upconverters can be maximized. The integrated upconverters demonstrate a high p-p efficiency of nearly 30% and a low detection limit down to 20 μW cm-2.
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Affiliation(s)
- Ge Mu
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Tianyu Rao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Shuo Zhang
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Chong Wen
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
| | - Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
| | - Xin Tang
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
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45
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Cao X, Lei Z, Zhao S, Tao L, Zheng Z, Feng X, Li J, Zhao Y. Te/SnS 2 tunneling heterojunctions as high-performance photodetectors with superior self-powered properties. NANOSCALE ADVANCES 2022; 4:4296-4303. [PMID: 36321139 PMCID: PMC9552753 DOI: 10.1039/d2na00507g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 08/28/2022] [Indexed: 06/16/2023]
Abstract
The tunneling heterojunctions made of two-dimensional (2D) materials have been explored to have many intriguing properties, such as ultrahigh rectification and on/off ratio, superior photoresponsivity, and improved photoresponse speed, showing great potential in achieving multifunctional and high-performance electronic and optoelectronic devices. Here, we report a systematic study of the tunneling heterojunctions consisting of 2D tellurium (Te) and Tin disulfide (SnS2). The Te/SnS2 heterojunctions possess type-II band alignment and can transfer to type-III one under reverse bias, showing a reverse rectification ratio of about 5000 and a current on/off ratio over 104. The tunneling heterojunctions as photodetectors exhibit an ultrahigh photoresponsivity of 50.5 A W-1 in the visible range, along with a dramatically enhanced photoresponse speed. Furthermore, due to the reasonable type-II band alignment and negligible band bending at the interface, Te/SnS2 heterojunctions at zero bias exhibit excellent self-powered performance with a high responsivity of 2.21 A W-1 and external quantum efficiency of 678%. The proposed heterostructure in this work provides a useful guideline for the rational design of a high-performance self-powered photodetector.
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Affiliation(s)
- Xuanhao Cao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Zehong Lei
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Shuting Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Lili Tao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Xing Feng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Jingbo Li
- Guangdong Key Lab of Chip and Integration Technology, Institute of Semiconductors, South China Normal University Guangzhou 510631 P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
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46
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Li L, Zhao S, Ran W, Li Z, Yan Y, Zhong B, Lou Z, Wang L, Shen G. Dual sensing signal decoupling based on tellurium anisotropy for VR interaction and neuro-reflex system application. Nat Commun 2022; 13:5975. [PMID: 36216925 PMCID: PMC9550802 DOI: 10.1038/s41467-022-33716-9] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2022] [Accepted: 09/29/2022] [Indexed: 11/13/2022] Open
Abstract
Anisotropy control of the electronic structure in inorganic semiconductors is an important step in developing devices endowed with multi-function. Here, we demonstrate that the intrinsic anisotropy of tellurium nanowires can be used to modulate the electronic structure and piezoelectric polarization and decouple pressure and temperature difference signals, and realize VR interaction and neuro-reflex applications. The architecture design of the device combined with self-locking effect can eliminate dependence on displacement, enabling a single device to determine the hardness and thermal conductivity of materials through a simple touch. We used a bimodal Te-based sensor to develop a wearable glove for endowing real objects to the virtual world, which greatly improves VR somatosensory feedback. In addition, we successfully achieved stimulus recognition and neural-reflex in a rabbit sciatic nerve model by integrating the sensor signals using a deep learning technique. In view of in-/ex-vivo feasibility, the bimodal Te-based sensor would be considered a novel sensing platform for a wide range application of metaverse, AI robot, and electronic medicine.
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Affiliation(s)
- Linlin Li
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Shufang Zhao
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Wenhao Ran
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhexin Li
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Yongxu Yan
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Bowen Zhong
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Zheng Lou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Lili Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China.
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China.
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47
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Yan Y, Xia K, Gan W, Yang K, Li G, Tang X, Li L, Zhang C, Fei GT, Li H. A tellurium short-wave infrared photodetector with fast response and high specific detectivity. NANOSCALE 2022; 14:13187-13191. [PMID: 36047440 DOI: 10.1039/d2nr02822k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) elementary tellurium (Te) has attracted intensive attention due to its potential applications in short-wave infrared photodetector devices. Here, we report hydrothermally synthesized 2D Te nanoflakes for short-wave infrared photodetectors with high performance. A Te-based photodetector exhibits a peak responsivity of 51.85 A W-1 at a 1550 nm wavelength, attributed to the efficient absorption of the phonons of 2D Te nanoflakes. Besides, the rising and decay time of the Te photodetector is calculated to be ∼19 μs and ∼21 μs, respectively, due to the rapid diffusion of charge carriers. In addition, Te-photodetectors exhibit a high specific detectivity (D*) of 1.88 × 1010 Jones and a superior external quantum efficiency (EQE) of 4148%. Our findings have demonstrated the development of high-performance short-wave infrared photodetectors with fast responses based on 2D Te nanoflakes.
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Affiliation(s)
- Yafei Yan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Kai Xia
- University of Science and Technology of China, Hefei 230026, P. R. China
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China.
| | - Wei Gan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Kemeng Yang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Gang Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Xi Tang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Liang Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China.
| | - Changjin Zhang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
- High Magnetic Field Laboratory of Anhui Province, Chinese Academy of Sciences, Hefei 230031, China
| | - Guang Tao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China.
| | - Hui Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
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48
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Wang F, Liu Z, Zhang T, Long M, Wang X, Xie R, Ge H, Wang H, Hou J, Gu Y, Hu X, Song Z, Wang S, Dong Q, Liao K, Tu Y, Han T, Li F, Zhang Z, Hou X, Wang S, Li L, Zhang X, Zhao D, Shan C, Shan L, Hu W. Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203283. [PMID: 35972840 DOI: 10.1002/adma.202203283] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Revised: 07/21/2022] [Indexed: 06/15/2023]
Abstract
Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS2 -BP-MoS2 vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W-1 and low noise-equivalent power of 2.0 × 10-14 W Hz-1/2 , in the MWIR region. A peak specific detectivity of 8.61 × 1010 cm Hz1/2 W-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors.
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Affiliation(s)
- Fang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhiyi Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Xiuxiu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haonan Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Hao Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jie Hou
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Yue Gu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xin Hu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Ze Song
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Suofu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Qingsong Dong
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Kecai Liao
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Yubing Tu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Feng Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Zongyuan Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Xingyuan Hou
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Shaoliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Liang Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Xueao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Dongxu Zhao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun, 130021, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
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49
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Zhang X, Yu H, Tang W, Wei X, Gao L, Hong M, Liao Q, Kang Z, Zhang Z, Zhang Y. All-van-der-Waals Barrier-Free Contacts for High-Mobility Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109521. [PMID: 35165952 DOI: 10.1002/adma.202109521] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Revised: 02/07/2022] [Indexed: 06/14/2023]
Abstract
Ultrathin 2D semiconductor devices are considered to have beyond-silicon potential but are severely troubled by the high Schottky barriers of the metal-semiconductor contacts, especially for p-type semiconductors. Due to the severe Fermi-level pinning effect and the lack of conventional semimetals with high work functions, their Schottky hole barriers are hardly removed. Here, an all-van-der-Waals barrier-free hole contact between p-type tellurene semiconductor and layered 1T'-WS2 semimetal is reported, which achieves a zero Schottky barrier height of 3 ± 9 meV and a high field-effect mobility of ≈1304 cm2 V-1 s-1 . The formation of such contacts can be attributed to the higher work function of ≈4.95 eV of the 1T'-WS2 semimetal, which is in sharp contrast with low work function (4.1-4.7 eV) of conventional semimetals. The study defines an available strategy for eliminating the Schottky barrier of metal-semiconductor contacts, facilitating 2D-semiconductor-based electronics and optoelectronics to extend Moore's law.
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Affiliation(s)
- Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Wenhui Tang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiaofu Wei
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Li Gao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qingliang Liao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhuo Kang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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50
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Deng W, Dai M, Wang C, You C, Chen W, Han S, Han J, Wang F, Ye M, Zhu S, Cui J, Wang QJ, Zhang Y. Switchable Unipolar-Barrier Van der Waals Heterostructures with Natural Anisotropy for Full Linear Polarimetry Detection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203766. [PMID: 35749220 DOI: 10.1002/adma.202203766] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2022] [Revised: 06/12/2022] [Indexed: 06/15/2023]
Abstract
Polarization-resolved photodetection in a compact footprint is of great interest for ultraminiaturized polarimeters to be used in a wide range of applications. However, probing the states of polarization (SOP) in materials with natural anisotropy are usually weak, limited by the material's natural dichroism or diattenuation. Here, a twisted unipolar-barrier van der Waals heterostructure (vdWH) to construct a bias-switchable polarization detection for retrieval of full SOP (from 0 to 180°) for linear polarized incident light is reported. As a demonstration example, this study realizes the concept in a b-AsP/WS2 /b-AsP vdWH relying on the natural anisotropic properties of the materials without using additional plasmonic/metasurface nanostructures to realize linear polarimetry in the mid-infrared range. Polarimetric imaging is further demonstrated with the developed linear polarimetry by directly displaying the Jones-vector-described SOP distribution of certain target object. This method, with the capabilities of detecting full linear SOP, is promising for the next-generation on-chip miniaturized polarimeters.
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Affiliation(s)
- Wenjie Deng
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, P. R. China
- Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Mingjin Dai
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Congya You
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, P. R. China
- Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Wenduo Chen
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Han
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jiayue Han
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fakun Wang
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Zhu
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jieyuan Cui
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qi Jie Wang
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- Centre for Disruptive Photonic Technologies, Division of Physics and Applied Physics School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Yongzhe Zhang
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, P. R. China
- Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
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