Room-temperature ultraviolet nanowire nanolasers

Molecular templating of layered halide perovskite nanowires

Layered metal-halide perovskites, or two-dimensional perovskites, can be synthesized in solution, and their optical and electronic properties can be tuned by changing their composition. We report a molecular templating method that restricted crystal growth along all crystallographic directions except for [110] and promoted one-dimensional growth. Our approach is widely applicable to synthesize a range of high-quality layered perovskite nanowires with large aspect ratios and tunable organic-inorganic chemical compositions. These nanowires form exceptionally well-defined and flexible cavities that exhibited a wide range of unusual optical properties beyond those of conventional perovskite nanowires. We observed anisotropic emission polarization, low-loss waveguiding (below 3 decibels per millimeter), and efficient low-threshold light amplification (below 20 microjoules per square centimeter).

Ultrasonic Coating of Poly(D,L-lactic acid)/Poly(lactic-co-glycolic acid) Electrospun Fibers with ZnO Nanoparticles to Increase Angiogenesis in the CAM Assay

Critical-size bone defects necessitate bone void fillers that should be integrated well and be easily vascularized. One viable option is to use a biocompatible synthetic polymer and sonocoat it with zinc oxide (ZnO) nanoparticles (NPs). However, the ideal NP concentration and size must be assessed because a high dose of ZnO NPs may be toxic. Electrospun PDLLA/PLGA scaffolds were produced with different concentrations (0.5 or 1.0 s of sonocoating) and sizes of ZnO NPs (25 nm and 70 nm). They were characterized by SEM, EDX, ICP-OES, and the water contact angle. Vascularization and integration into the surrounding tissue were assessed with the CAM assay in the living chicken embryo. SEM, EDX, and ICP-OES confirmed the presence of ZnO NPs on polymer fibers. Sonocoated ZnO NPs lowered the WCA compared with the control. Smaller NPs were more pro-angiogenic exhibiting a higher vessel density than the larger NPs. At a lower concentration, less but larger vessels were visible in an environment with a lower cell density. Hence, the favored combination of smaller ZnO NPs at a lower concentration sonocoated on PDLLA/PLGA electrospun meshes leads to an advanced state of tissue integration and vascularization, providing a valuable synthetic bone graft to be used in clinics in the future.

Heat-Annealed Zinc Oxide on Flexible Carbon Nanotube Paper and Exposed to Gradient Light to Enhance Its Photoelectric Response

Buckypaper (BP), a flexible and porous material, exhibits photovoltaic properties when exposed to light. In this study, we employed radio frequency (RF) sputtering of zinc oxide (ZnO) followed by rapid thermal annealing to enhance the photovoltaic response of BP. We investigated the impact of various sputtering parameters, such as the gas flow ratio of argon to oxygen and deposition time, on the morphology, composition, resistivity, and photovoltaic characteristics of ZnO-modified BP. Additionally, the photovoltaic performance of the samples under different illumination modes and wavelengths was compared. It was found that optimal sputtering conditions-argon to oxygen flow ratio of 1:2, deposition time of 20 min, and power of 100 watts-resulted in a ZnO film thickness of approximately 45 nanometers. After annealing at 400 °C for 10 min, the ZnO-modified BP demonstrated a significant increase in photocurrent and photovoltage, along with a reduction in resistivity, compared to unmodified BP. Moreover, under gradient illumination, the ZnO-modified BP exhibited a photovoltage enhancement of 14.70-fold and a photocurrent increase of 13.86-fold, compared to uniform illumination. Under blue light, it showed a higher photovoltaic response than under other colors. The enhancement in photovoltaic response is attributed to the formation of a Schottky junction between ZnO and BP, an increased carrier concentration gradient, and an expanded light absorption spectrum. Our results validate that ZnO sputtering followed by annealing is an effective method for modifying BP for photovoltaic applications such as solar cells and photodetectors.

Topological photonic crystal nanowire array laser with bulk states

A topological photonic crystal InGaAsP/InP core-shell nanowire array laser with bulk states operating in the 1550 nm band is proposed and simulated. By optimizing the structure parameters, high Q factor of 1.2 × 105 and side-mode suppression ratio of 13.2 dB are obtained, which are 28.6 and 4.6 times that of a uniform nanowire array, respectively. The threshold and maximum output are 17% lower and 613% higher than that of the uniform nanowire array laser, respectively, due to the narrower nanowire slits and stronger optical confinement. In addition, a low beam divergence angle of 2° is obtained due to the topological protection. This work may pave the way for the development of high-output, low-threshold, low-beam-divergence nanolasers.

Circular quantum wire symmetrically loaded with a graphene strip as the plasmonic micro/nano laser: threshold conditions analysis

We study, apparently for the first time, the threshold conditions for the time-harmonic natural modes of the micro-to-nanosize plasmonic laser shaped as a circular quantum wire with a flat graphene strip, placed symmetrically inside it, in the H-polarization case. We suppose that the quantum wire is made of a nonmagnetic gain material, characterized with the aid of the "active" imaginary part of the complex refractive index. The emergence of lasers integrating plasmonic effects marks a significant trend in contemporary photonics. Here, the graphene offers a promising alternative to the noble metals as it exhibits the capacity to sustain plasmon-polariton natural surface waves across the infrared and terahertz (THz) spectra. The used innovative approach is the lasing eigenvalue problem (LEP), which is classical electromagnetic field boundary-value problem, adapted to the presence of active region. It is tailored to deliver both the mode-specific emission frequency, which is purely real at the threshold, and the value of the gain index of the active region, necessary to make the frequency real-valued. The conductivity of graphene is characterized using the quantum Kubo formalism. We reduce the LEP for the considered nanolaser to a hyper-singular integral equation for the current on the strip and discretize it by the Nystrom-type method. This method is meshless and computationally economic. After discretization, a matrix equation is obtained. The sought for mode-specific pairs {the frequency and the threshold gain index} correspond to the zeros of the matrix determinant. It should be noted that the convergence to exact LEP eigenvalues is guaranteed mathematically if the discretization order is taken progressively larger. Two families of modes are identified and studied: the modes of the quantum wire, perturbed by the presence of the graphene strip and the plasmon modes of the strip. The frequencies of all plasmon modes and the lowest mode of the quantum wire are found to be well-tuned by changing the chemical potential of graphene. Engineering analytic formulas for the plasmon-mode frequencies and thresholds are derived. We believe that the presented results can be used in the creation of single-mode tunable micro and nanolasers.

Nanotube Structure of AsPS4-xSex (x = 0, 1)

Single-wall nanotubes of isostructural AsPS4-xSex (x = 0, 1) are grown from solid-state reaction of stoichiometric amounts of the elements. The structure of AsPS4 was determined using single-crystal X-ray diffraction and refined in space group P 1 ¯ . The infinite, single-walled AsPS4 nanotubes have an outer diameter of ≈1.1 nm and are built of corner-sharing PS4 tetrahedra and AsS3 trigonal pyramids. Each nanotube is nearly hexagonal, but the ≈3.4 Å distance between S atoms on adjacent nanotubes allows them to easily slide past one another, resulting in the loss of long-range order. Substituting S with Se disrupted the crystallization of the nanotubes, resulting in amorphous products that precluded the determination of the structure for AsPS3Se. 31P solid-state NMR spectroscopy indicated a single unique tetrahedral P environment in AsPS4 and five different P environments all with different degrees of Se substitution in AsPS3Se. Optical absorption spectroscopy revealed an energy band gap of 2.7 to 2.4 eV for AsPS4 and AsPS3Se, respectively. Individual AsPS4 microfibers showed a bulk conductivity of 3.2 × 10-6 S/cm and a negative photoconductivity effect under the illumination of light (3.06 eV) in ambient conditions. Thus, intrinsic conductivity originates from hopping through empty trap states along the length of the AsPS4 nanotubes.

Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses

Memristors can be used to mimic synaptic behavior in artificial neural networks, which makes them a key component in neuromorphic computing and holds promise for advancing the field. In this study, a memory artificial synaptic device based on ZnO-BaTiO3 (ZnO-BTO) vertically aligned nanocomposite thin films was prepared. The vertical interface between the two phases can be used as a conduit for oxygen vacancy (OV) accumulation and a channel for OV movement, which greatly optimizes the resistive switching performance of the device and has the potential for multistage storage. By applying different pulse sequences to the device, the conductance of the device is adjusted from multiple angles, and a variety of synaptic functions are simulated, such as paired-pulse facilitation, spike-timing-dependent plasticity, short-term plasticity to long-term plasticity (STP-LTP), and long-term potentiation/depression (LTP/LTD). Finally, we construct a neural network for image recognition, and the recognition accuracy can reach 91%. Our study demonstrates the feasibility of using composite thin-film vertical interface to regulate the resistive performance of memristors and its great potential in artificial synaptic simulation and neuromorphic computing.

Synthesis and Mechanism of 1D ZnO Based on Alkaline Dissolution-Conversion Strategy of High Stable and Soluble ɛ-Zn(OH)2

A high soluble and stable ɛ-Zn(OH)2 precursor is synthesized at below room temperature to efficiently prepare ZnO whiskers. The experimental results indicate that the formation of ZnO whiskers is carried out mainly via two steps: the formation of ZnO seeds from ɛ-Zn(OH)2 via the in situ solid conversion, and the following growth of whiskers via dissolution-precipitation route. The decrease of temperature from 25 to 5 °C promotes the formation of ɛ-Zn(OH)2 with higher solubility and stability, which balances the conversion and dissolution rates of precursor. The Rietveld refinement, DFT calculations and MD simulations reveal that the primary reason for these characteristics is the expansion of ɛ-Zn(OH)2 lattice due to temperature, causing difficulties in the dehydration of adjacent ─OH. Simultaneously, the larger specific surface area favors the dissolution of ɛ-Zn(OH)2 . Based on this precursor, well-dispersed ZnO whiskers with 9.82 µm in length, 242.38 nm in diameter, and an average aspect ratio of 41 are successfully synthesized through a SDSN-assisted hydrothermal process at 80 °C. The process has an extremely high solid content of 2.5% (mass ratio of ZnO to solution) and an overall yield of 92%, which offers a new approach for the scaled synthesis of high aspect ratio ZnO whiskers by liquid-phase method.

Nonlinear Boost of Optical Angular Momentum Selectivity by Hybrid Nanolaser Circuits

Selective control of light is essential for optical science and technology, with numerous applications. However, optical selectivity in the angular momentum of light has been quite limited, remaining constant by increasing the incident light power on previous passive optical devices. Here, we demonstrate a nonlinear boost of optical selectivity in both the spin and orbital angular momentum of light through near-field selective excitation of single-mode nanolasers. Our designed hybrid nanolaser circuits consist of plasmonic metasurfaces and individually placed perovskite nanowires, enabling subwavelength focusing of angular-momentum-distinctive plasmonic fields and further selective excitation of nanolasers in nanowires. The optically selected nanolaser with a nonlinear increase of light emission greatly enhances the baseline optical selectivity offered by the metasurface from about 0.4 up to near unity. Our demonstrated hybrid nanophotonic platform may find important applications in all-optical logic gates and nanowire networks, ultrafast optical switches, nanophotonic detectors, and on-chip optical and quantum information processing.

Fabrication of Oriented Polycrystalline MOF Superstructures

The field of metal-organic frameworks (MOFs) has progressed beyond the design and exploration of powdery and single-crystalline materials. A current challenge is the fabrication of organized superstructures that can harness the directional properties of the individual constituent MOF crystals. To date, the progress in the fabrication methods of polycrystalline MOF superstructures has led to close-packed structures with defined crystalline orientation. By controlling the crystalline orientation, the MOF pore channels of the constituent crystals can be aligned along specific directions: these systems possess anisotropic properties including enhanced diffusion along specific directions, preferential orientation of guest species, and protection of functional guests. In this perspective, we discuss the current status of MOF research in the fabrication of oriented polycrystalline superstructures focusing on the specific crystalline directions of orientation. Three methods are examined in detail: the assembly from colloidal MOF solutions, the use of external fields for the alignment of MOF particles, and the heteroepitaxial ceramic-to-MOF growth. This perspective aims at promoting the progress of this field of research and inspiring the development of new protocols for the preparation of MOF systems with oriented pore channels, to enable advanced MOF-based devices with anisotropic properties.

CO2 and CO Capture on the ZnO Surface: A GCMC and Electronic Structure Study

The amount of polluting gases released into the atmosphere has grown drastically. Among them, it is possible to cite the release of CO2 and CO gases on a large scale as one of the products of the complete and incomplete combustion of petroleum-derived fuels. It is worth noting that the production of energy by burning fossil fuels supplies the energy demand but causes environmental damage, and several studies have addressed the reduction. One of them is using materials with the potential to capture these gases. The experimental and theoretical studies have significant contributions that promote advances in this area. Among the materials investigated, ZnO has emerged, demonstrating the considerable potential for capturing various gases, including CO2 and CO. This work used density functional theory (DFT) and Grand Canonical Monte Carlo Method (GCMC) to investigate the adsorption of CO2 and CO on the surface of Zinc oxide (ZnO) to obtain adsorption isotherms and interaction energy and the interaction nature. The results suggest that CO2 adsorption slightly changed the angle of the O-C-O to values less than 180°. For the CO, its carbon atom interacts simultaneously with Zn and O of the ZnO surface. However, CO interactions have an ionic character with a lower binding energy value than the CO2 interaction. The energies calculated using the PM6 and DFT methods generated results compatible with the experimental values. In applications involving a mixture of these two gases, the adsorption of CO2 should be favored, and there may be inhibition of the adsorption of CO for high CO2 concentrations.

Vertically Well-Aligned ZnO Nanoscintillator Arrays with Improved Photoluminescence and Scintillation Properties

ZnO nanoarrays were grown via a low-temperature hydrothermal method. Solutions, each with different additive combinations, were prepared and evaluated. The effects of the additives involved in the growth procedure, i.e., ammonium hydroxide and sodium citrate, were studied in terms of the morphological, optical and scintillation properties of the ZnO nanostructures. Measurement of the nanorod (NR) length, corresponding photoluminescence (PL) and scintillation spectra and their dependence on the additives present in the solution are discussed. ZnO NRs grown on a silica substrate, whose UV transmission was found to be better than glass, showed high-quality structural and optical properties. It was found that the addition of sodium citrate significantly reduced defects and correspondingly increased the intrinsic near-band-edge (NBE) UV emission intensity at ~380 nm. To obtain high-quality nanostructures, samples were annealed in a 10% H2 + 90% N2 atmosphere. The anneal in the forming gas atmosphere enhanced the emission of the UV peak by reducing defects in the nanostructure. NRs are highly tapered towards the end of the structure. The tapering process was monitored using time growth studies, and its effect on PL and reflectance spectra are discussed. A good alpha particle response was obtained for the grown ZnO NRs, confirming its potential to be used as an alpha particle scintillator. After optimizing the reaction parameters, it was concluded that when ammonium hydroxide and sodium citrate were used, vertically well-aligned and long ZnO nanoarrays with highly improved optical and scintillation properties were obtained.

Visualization of Hot Carrier Dynamics in a Single CsPbBr3 Perovskite Microplate Using Femtosecond Kerr-Gated Wide-Field Fluorescence Spectroscopy

Lead halide perovskites (LHPs) have excellent semiconductor properties. They have been used in many applications such as solar cells. Recently, the hot carrier dynamics in this type of material have received much attention as they are useful for enhancing the performance of optoelectrical devices fabricated from it. Here, we study the ultrafast hot carrier dynamics of a single CsPbBr3 microplate using femtosecond Kerr-gated wide-field fluorescence spectroscopy. The transient photoluminescence spectra have been measured under a variety of excitation fluences. The temporal evolution of bandgap renormalization and the competition between hot carrier cooling and the recovery of the renormalized bandgap are clearly revealed.

Laser-Based Selective Material Processing for Next-Generation Additive Manufacturing

The connection between laser-based material processing and additive manufacturing is quite deeply rooted. In fact, the spark that started the field of additive manufacturing is the idea that two intersecting laser beams can selectively solidify a vat of resin. Ever since, laser has been accompanying the field of additive manufacturing, with its repertoire expanded from processing only photopolymer resin to virtually any material, allowing liberating customizability. As a result, additive manufacturing is expected to take an even more prominent role in the global supply chain in years to come. Herein, an overview of laser-based selective material processing is presented from various aspects: the physics of laser-material interactions, the materials currently used in additive manufacturing processes, the system configurations that enable laser-based additive manufacturing, and various functional applications of next-generation additive manufacturing. Additionally, current challenges and prospects of laser-based additive manufacturing are discussed.

Toward functionalization of ZnO nanotubes and monolayers with 5-aminolevulinic acid drugs as possible nanocarriers for drug delivery: a DFT based molecular dynamic simulation

We have investigated the interactions between a 5-aminolevulinic acid (ALA) drug and ZnO nanostructures including ZnO monolayers and ZnO nanotubes (ZnONTs) using density functional theory (DFT) calculations. In the context of the dispersion corrected Perdew-Burke-Ernzerhof (PBE) approach, the energetics, charge transfer, electronic structure and equilibrium geometries have been estimated. As ALA is adsorbed onto/into the ZnONTs and on the ZnO monolayer with interaction energies (Eint) of -2.55/-2.75 eV and -2.51 eV, respectively, the calculated Eint values and bonding distances (∼2 Å) reveal that the interaction type is chemisorption. The ZnO nanostructures showed promising performance in the ALA drug functionalization, taking into account the interaction energy values. The band gap almost remains unchanged for both of the substrates under consideration after ALA adsorption, and the semiconductor properties of the substrates are preserved, according to the analyzed density of states (DOSs) spectra. The interaction nature of the ALA-ZnO nanostructures according to the atom in molecule (AIM) analysis was found to be polar attraction with partial covalent bonding between O and Zn. Our DFT based molecular dynamic (MD) simulation results demonstrate that, in the aqueous solution, ALA moves toward the interior sidewall of the ZnONTs and ZnO nanosheet surface and binds to the Zn atom through its O (carbonyl/hydroxyl groups) and N atoms and the hydroxyl H atom was dissociated and binds to the O atom of the ZnO surface. However, in the case of ALA adsorption onto the outer surface of ZnONTs, only the O atoms of carbonyl groups bind to the Zn atom and the structure of the drug remains undestroyed during the adsorption. The current findings shed light on the polar drug adsorption/encapsulation behavior on/into ZnO nanostructures, which may encourage further use of ZnO-based nanomaterials in the field of drug delivery and bio-functionalized nanomaterials.

Ultrafast Antisolvent Growth of Single-Crystal CsPbBr3 Microcavity for Whispering-Gallery-Mode Lasing

In recent years, all-inorganic cesium lead bromide (CsPbBr₃) perovskites have garnered considerable attention for their prospective applications in green photonics and optoelectronic devices. However, the development of efficient and economical methods to obtain high-quality micron-sized single-crystalline CsPbBr₃ microplatelets (MPs) has become a challenge. Here, we report the synthesis of CsPbBr₃ MPs on Si/SiO₂ substrate by optimizing the ultrafast antisolvent method (FAS). This technique is able to produce well-dispersed, uniformly sized, and morphologically regular tetragonal phase single crystals, which can give strong green emission at room temperature, with excellent stability and excitonic character. Moreover, the crystals demonstrated lasing with a whispering gallery mode with a low threshold. These results suggest that the single-crystalline CsPbBr₃ MPs synthesized by this method are of high optical quality, holding vast potential for future applications in photonic devices.

Short-wave infrared cavity resonances in a single GeSn nanowire

Nanowires are promising platforms for realizing ultra-compact light sources for photonic integrated circuits. In contrast to impressive progress on light confinement and stimulated emission in III-V and II-VI semiconductor nanowires, there has been no experimental demonstration showing the potential to achieve strong cavity effects in a bottom-up grown single group-IV nanowire, which is a prerequisite for realizing silicon-compatible infrared nanolasers. Herein, we address this limitation and present an experimental observation of cavity-enhanced strong photoluminescence from a single Ge/GeSn core/shell nanowire. A sufficiently large Sn content ( ~ 10 at%) in the GeSn shell leads to a direct bandgap gain medium, allowing a strong reduction in material loss upon optical pumping. Efficient optical confinement in a single nanowire enables many round trips of emitted photons between two facets of a nanowire, achieving a narrow width of 3.3 nm. Our demonstration opens new possibilities for ultrasmall on-chip light sources towards realizing photonic-integrated circuits in the underexplored range of short-wave infrared (SWIR).

Design Rules for Obtaining Narrow Luminescence from Semiconductors Made in Solution

Solution-processed semiconductors are in demand for present and next-generation optoelectronic technologies ranging from displays to quantum light sources because of their scalability and ease of integration into devices with diverse form factors. One of the central requirements for semiconductors used in these applications is a narrow photoluminescence (PL) line width. Narrow emission line widths are needed to ensure both color and single-photon purity, raising the question of what design rules are needed to obtain narrow emission from semiconductors made in solution. In this review, we first examine the requirements for colloidal emitters for a variety of applications including light-emitting diodes, photodetectors, lasers, and quantum information science. Next, we will delve into the sources of spectral broadening, including "homogeneous" broadening from dynamical broadening mechanisms in single-particle spectra, heterogeneous broadening from static structural differences in ensemble spectra, and spectral diffusion. Then, we compare the current state of the art in terms of emission line width for a variety of colloidal materials including II-VI quantum dots (QDs) and nanoplatelets, III-V QDs, alloyed QDs, metal-halide perovskites including nanocrystals and 2D structures, doped nanocrystals, and, finally, as a point of comparison, organic molecules. We end with some conclusions and connections, including an outline of promising paths forward.

A new S-scheme heterojunction of 1D ZnGa2O4/ZnO nanofiber for efficient photocatalytic degradation of TC-HCl

One-dimensional shaped ZnGa₂O₄, ZnO and ZnGa₂O₄/ZnO nanofibers were successfully prepared by electrostatic spinning technique and the photocatalytic degradation performance of tetracycline hydrochloride (TC-HCl) were studied. It was found that the S-scheme heterojunction formed in the ZnGa₂O₄/ZnO could greatly reduce the recombination of the photogenerated carriers and therefore improve the photocatalytic performance. By optimizing the ratio of the ZnGa₂O₄ and ZnO, the largest degradation rate could reach 0.0573 min^-1, which was 20 times of the self-degradation rate of TC-HCl. It was verified that the h⁺ played the key role in the reactive groups for the high performance decomposition of TC-HCl by capture experiments. This work provides a new method for the highly efficient photocatalytic degradation of TC-HCl.

State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots

The main intent of this paper is to present an exhaustive description of the most relevant mathematical models for the electromechanical properties of heterostructure quantum dots. Models are applied both to wurtzite and zincblende quantum dot due to the relevance they have shown for optoelectronic applications. In addition to a complete overview of the continuous and atomistic models for the electromechanical fields, analytical results will be presented for some relevant approximations, some of which are unpublished, such as models in cylindrical approximation or a cubic approximation for the transformation of a zincblende parametrization to a wurtzite one and vice versa. All analytical models will be supported by a wide range of numerical results, most of which are also compared with experimental measurements.

An Overview of Modeling Approaches for Compositional Control in III-V Ternary Nanowires

Modeling of the growth process is required for the synthesis of III-V ternary nanowires with controllable composition. Consequently, new theoretical approaches for the description of epitaxial growth and the related chemical composition of III-V ternary nanowires based on group III or group V intermix were recently developed. In this review, we present and discuss existing modeling strategies for the stationary compositions of III-V ternary nanowires and try to systematize and link them in a general perspective. In particular, we divide the existing approaches into models that focus on the liquid-solid incorporation mechanisms in vapor-liquid-solid nanowires (equilibrium, nucleation-limited, and kinetic models treating the growth of solid from liquid) and models that provide the vapor-solid distributions (empirical, transport-limited, reaction-limited, and kinetic models treating the growth of solid from vapor). We describe the basic ideas underlying the existing models and analyze the similarities and differences between them, as well as the limitations and key factors influencing the stationary compositions of III-V nanowires versus the growth method. Overall, this review provides a basis for choosing a modeling approach that is most appropriate for a particular material system and epitaxy technique and that underlines the achieved level of the compositional modeling of III-V ternary nanowires and the remaining gaps that require further studies.

On-Chip Ultralow-Threshold Tunable CdSSe Nanobelt Lasers Excited by the Emission of Linked ZnO Nanowire

The integration of optical waveguide and on-chip nanolasers source has been one of the trends in photonic devices. For on-chip nanolasers, the integration of nanowires and high antidamage ability are imperative. Herein, we realized the on-chip ultralow-threshold and wavelength-tunable lasing from alloyed CdSSe nanobelt chip that is excited by the emission from linked ZnO nanowires. ZnO nanowire arrays are integrated into CdSSe nanobelt chips by the dry transfer method. A one-dimensional (1D) ZnO nanowire forms high-quality optical resonators and serves as an indirect pumping light to stimulate CdSSe nanobelt chips, and then wavelength-tunable lasing is generated with the ultralow threshold of 3.88 μW. The lasing mechanism is quite different than direct excitation by nanosecond laser pulse and indirect pumping by ZnO emission. The ZnO-CdSSe blocks provide a new solution to realize nanowire lasing from linked nanowires rather than direct laser pumping and thus avoid the light direct damage under general nanosecond laser excitation.

Physical Mechanism of Nonlinear Spectra in Triangene

In this work, we theoretically investigate the linear and nonlinear optical absorption properties of open triangulene spin chains and cyclic triangulene spin chains in relation to their lengths and shapes. The physical mechanism of local excitation within the triangular alkene unit and the weak charge transfer between the units are discussed. The uniformly distributed electrostatic potential allows the system to have a small permanent dipole moment that blocks the electronic transition in the light excitation such that the electronic transition can only be carried out between adjacent carbon atoms. The one-photon absorption (OPA) spectra and two-photon absorption (TPA) spectra are red-shifted with the addition of triangulene units compared to N = 3TSCs (triangulene spin chains, TSCs). Here, TPA is mainly caused by the first step of the transition. The length of the spin chain has a significant adjustment effect on the photon cross-section. TSCs of different lengths and shapes can control chirality by adjusting the distribution of the electric dipole moment and transition magnetic dipole moment. These analyses reveal the photophysical properties of triangulene and provide a theoretical basis for studying the photophysical properties of triangulene and its derivatives.

Mechanisms during Strain Rate-Dependent Crack Propagation of Copper Nanowires Containing Edge Cracks

The crack propagation mechanism of Cu nanowires is investigated by using molecular dynamics methods. The microstructural evolution of crack propagation at different strain rates and crack depths is analyzed. Meanwhile, the stress intensity factor at the crack tip during crack propagation is calculated to describe the crack propagation process of Cu nanowires under each condition. The simulation results show that the competition between lattice recovery and dislocation multiplication determines the crack propagation mode. Lattice recovery dominates the plastic deformation of Cu nanowires at low strain rates, and the crack propagation mode is shear fracture. With the increase in strain rate, the plastic deformation mechanism gradually changes from lattice recovery to dislocation multiplication, which makes the crack propagation change from shear fracture to ductile fracture. Interestingly, the crack propagation mechanism varies with crack depth. The deeper the preset crack of Cu nanowires, the weaker the deformation resistance, and the more likely the crack propagation is accompanied.

High-Sensitivity 2D MoS2/1D MWCNT Hybrid Dimensional Heterostructure Photodetector

A photodetector based on a hybrid dimensional heterostructure of laterally aligned multiwall carbon nanotubes (MWCNTs) and multilayered MoS₂ was prepared using the micro-nano fixed-point transfer technique. Thanks to the high mobility of carbon nanotubes and the efficient interband absorption of MoS₂, broadband detection from visible to near-infrared (520-1060 nm) was achieved. The test results demonstrate that the MWCNT-MoS2 heterostructure-based photodetector device exhibits an exceptional responsivity, detectivity, and external quantum efficiency. Specifically, the device demonstrated a responsivity of 3.67 × 10³ A/W (λ = 520 nm, V_ds = 1 V) and 718 A/W (λ = 1060 nm, V_ds = 1 V). Moreover, the detectivity (D*) of the device was found to be 1.2 × 10¹⁰ Jones (λ = 520 nm) and 1.5 × 10⁹ Jones (λ = 1060 nm), respectively. The device also demonstrated external quantum efficiency (EQE) values of approximately 8.77 × 10⁵% (λ = 520 nm) and 8.41 × 10⁴% (λ = 1060 nm). This work achieves visible and infrared detection based on mixed-dimensional heterostructures and provides a new option for optoelectronic devices based on low-dimensional materials.

Tuning the Liquid-Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures

Controlling the morphology and composition of semiconductor nano- and micro-structures is crucial for fundamental studies and applications. Here, Si-Ge semiconductor nanostructures were fabricated using photolithographically defined micro-crucibles on Si substrates. Interestingly, the nanostructure morphology and composition of these structures are strongly dependent on the size of the liquid-vapour interface (i.e., the opening of the micro-crucible) in the CVD deposition step of Ge. In particular, Ge crystallites nucleate in micro-crucibles with larger opening sizes (3.74-4.73 μm²), while no such crystallites are found in micro-crucibles with smaller openings of 1.15 μm². This interface area tuning also results in the formation of unique semiconductor nanostructures: lateral nano-trees (for smaller openings) and nano-rods (for larger openings). Further TEM imaging reveals that these nanostructures have an epitaxial relationship with the underlying Si substrate. This geometrical dependence on the micro-scale vapour-liquid-solid (VLS) nucleation and growth is explained within a dedicated model, where the incubation time for the VLS Ge nucleation is inversely proportional to the opening size. The geometric effect on the VLS nucleation can be used for the fine tuning of the morphology and composition of different lateral nano- and micro-structures by simply changing the area of the liquid-vapour interface.

Ultra-small low-threshold mid-infrared plasmonic nanowire lasers based on n-doped GaN

An ultra-small mid-infrared plasmonic nanowire laser based on n-doped GaN metallic material is proposed and studied by the finite-difference time-domain method. In comparison with the noble metals, nGaN is found to possess superior permittivity characteristics in the mid-infrared range, beneficial for generating low-loss surface plasmon polaritons and achieving strong subwavelength optical confinement. The results show that at a wavelength of 4.2 µm, the penetration depth into the dielectric is substantially decreased from 1384 to 163 nm by replacing Au with nGaN, and the cutoff diameter of nGaN-based laser is as small as 265 nm, only 65% that of the Au-based one. To suppress the relatively large propagation loss induced by nGaN, an nGaN/Au-based laser structure is designed, whose threshold gain has been reduced by nearly half. This work may pave the way for the development of miniaturized low-consumption mid-infrared lasers.

Synthesis of a ZnO nanowire array within minutes

A ZnO nanowire array was successfully synthesized within 10 minutes, for the first time, through electrodeposition of a Zn nanocrystal coating followed by a microwave hydrothermal treatment, representing the cheapest and fastest route from aqueous solutions so far. This simple, economical, efficient, flexible and scalable method shows attractive prospects for industrial application.

Electrochemical Immunosensors Based on Zinc Oxide Nanorods for Detection of Antibodies Against SARS-CoV-2 Spike Protein in Convalescent and Vaccinated Individuals

Even after over 2 years of the COVID-19 pandemic, research on rapid, inexpensive, and accurate tests remains essential for controlling and avoiding the global spread of SARS-CoV-2 across the planet during a potential reappearance in future global waves or regional outbreaks. Assessment of serological responses for COVID-19 can be beneficial for population-level surveillance purposes, supporting the development of novel vaccines and evaluating the efficacy of different immunization programs. This can be especially relevant for broadly used inactivated whole virus vaccines, such as CoronaVac, which produced lower titers of neutralizing antibodies. and showed lower efficacy for specific groups such as the elderly and immunocompromised. We developed an impedimetric biosensor based on the immobilization of SARS-CoV-2 recombinant trimeric spike protein (S protein) on zinc oxide nanorod (ZnONR)-modified fluorine-doped tin oxide substrates for COVID-19 serology testing. Due to electrostatic interactions, the negatively charged S protein was immobilized via physical adsorption. The electrochemical response of the immunosensor was measured at each modification step and characterized by scanning electron microscopy and electrochemical techniques. We successfully evaluated the applicability of the modified ZnONR electrodes using serum samples from COVID-19 convalescent individuals, CoronaVac-vaccinated with or without positive results for SARS-CoV-2 infection, and pre-pandemic samples from healthy volunteers as controls. ELISA for IgG anti-SARS-CoV-2 spike protein was performed for comparison, and ELISA for IgG anti-RBDs of seasonal coronavirus (HCoVs) was used to test the specificity of immunosensor detection. No cross-reactivity with HCoVs was detected using the ZnONR immunosensor, and more interestingly, the sensor presented higher sensitivity when compared to negative ELISA results. The results demonstrate that the ZnONRs/spike-modified electrode displayed sensitive results for convalescents and vaccinated samples and shows excellent potential as a tool for the population's assessment and monitoring of seroconversion and seroprevalence.

Nanostripe-Confined Catalyst Formation for Uniform Growth of Ultrathin Silicon Nanowires

Uniform growth of ultrathin silicon nanowire (SiNW) channels is the key to accomplishing reliable integration of various SiNW-based electronics, but remains a formidable challenge for catalytic synthesis, largely due to the lack of uniform size control of the leading metallic droplets. In this work, we explored a nanostripe-confined approach to produce highly uniform indium (In) catalyst droplets that enabled the uniform growth of an orderly SiNW array via an in-plane solid-liquid-solid (IPSLS) guided growth directed by simple step edges. It was found that the size dispersion of the In droplets could be reduced substantially from Dcatpl = 20 ± 96 nm on a planar surface to only Dcatns = 88 ± 13 nm when the width of the In nanostripe was narrowed to Wstr= 100 nm, which could be qualitatively explained in a confined diffusion and nucleation model. The improved droplet uniformity was then translated into a more uniform growth of ultrathin SiNWs, with diameter of only Dnw= 28 ± 4 nm, which has not been reported for single-edge guided IPSLS growth. These results lay a solid basis for the construction of advanced SiNW-derived field-effect transistors, sensors and display applications.

Real-Time Study of Surface-Guided Nanowire Growth by In Situ Scanning Electron Microscopy

Surface-guided growth has proven to be an efficient approach for the production of nanowire arrays with controlled orientations and their large-scale integration into electronic and optoelectronic devices. Much has been learned about the different mechanisms of guided nanowire growth by epitaxy, graphoepitaxy, and artificial epitaxy. A model describing the kinetics of surface-guided nanowire growth has been recently reported. Yet, many aspects of the surface-guided growth process remain unclear due to a lack of its observation in real time. Here we observe how surface-guided nanowires grow in real time by in situ scanning electron microscopy (SEM). Movies of ZnSe surface-guided nanowires growing on periodically faceted substrates of annealed M-plane sapphire clearly show how the nanowires elongate along the substrate nanogrooves while pushing the catalytic Au nanodroplet forward at the tip of the nanowire. The movies reveal the timing between competing processes, such as planar vs nonplanar growth, catalyst-selective vapor-liquid-solid elongation vs nonselective vapor-solid thickening, and the effect of topographic discontinuities of the substrate on the growth direction, leading to the formation of kinks and loops. Contrary to some observations for nonplanar nanowire growth, planar nanowires are shown to elongate at a constant rate and not by jumps. A decrease in precursor concentration as it is consumed after long reaction time causes the nanowires to shrink back instead of growing, thus indicating that the process is reversible and takes place near equilibrium. This real-time study of surface-guided growth, enabled by in situ SEM, enables a better understanding of the formation of nanostructures on surfaces.

Multifunctional phototheranostic agent ZnO@Ag for anti-infection through photothermal/photodynamic therapy

To overcome the limitations of traditional therapeutics, nanotechnology offers a synergistic therapeutic approach for the treatment of bacterial infection and biofilms that has attracted attention. Herein, we report on a ZnO@Ag nanocomposite with good biocompatibility synthesized by doping ZnO NPs with silver nanoparticles (Ag NPs). ZnO@Ag nanocomposites were synthesized with varying ratios of Ag NPs (0.5%, 2%, 8%). Under the same experimental conditions, ZnO@8%Ag exhibited outstanding properties compared to the other nanocomposites and the pristine ZnO NPs. ZnO@8%Ag demonstrated excellent photothermal and photodynamic properties. Also, ZnO@8%Ag demonstrated over 99% inhibition of Staphylococcus aureus (S. aureus) under photothermal therapy (PTT) or photodynamics therapy (PDT) as a result of the excessive generation of reactive oxygen species (ROS) by the Ag+ released, while the pristine ZnO showed an insignificant inhibition rate compared to the PBS group (control). Furthermore, ZnO@8%Ag completely disrupted S. aureus biofilm under a combined PTT/PDT treatment, a synergetic trimodal therapy, although the molecular mechanism of biofilm inhibition remains unclear. Hence, the excellent photothermal, photodynamic, biocompatibility, and bactericidal properties of ZnO@8%Ag present it as an appropriate platform for bacterial and biofilm treatment or other biomedically related applications.

Anisotropy Engineering of ZnO Nanoporous Frameworks: A Lattice Dynamics Simulation

The anisotropy engineering of nanoporous zinc oxide (ZnO) frameworks has been performed by lattice dynamics simulation. A series of zinc oxide (ZnO) nanoporous framework structures was designed by creating nanopores with different sizes and shapes. We examined the size effects of varying several features of the nanoporous framework (namely, the removal of layers of atoms, surface-area-to-volume ratio, coordination number, porosity, and density) on its mechanical properties (including bulk modulus, Young's modulus, elastic constant, and Poisson ratio) with both lattice dynamics simulations. We also found that the anisotropy of nanoporous framework can be drastically tuned by changing the shape of nanopores. The maximum anisotropy (defined by Y_max/Y_min) of the Young's modulus value increases from 1.2 for bulk ZnO to 2.5 for hexagon-prism-shaped ZnO nanoporous framework structures, with a density of 2.72 g/cm³, and, even more remarkably, to 89.8 for a diamond-prism-shape at a density of 1.72 g/cm³. Our findings suggest a new route for desirable anisotropy and mechanical property engineering with nanoporous frameworks by editing the shapes of the nanopores for the desired anisotropy.

Effects of Group-I Elements on Output Voltage Generation of ZnO Nanowires Based Nanogenerator; Degradation of Screening Effects by Oxidation of Nanowires

Here, we report the successful incorporation of group I elements (K, Na, Li) to ZnO nanowires. Three distinct (2, 4, and 6 wt.%) doping concentrations of group I elements have been used to generate high piezoelectric voltage by employing a vertically integrated nanowire generator (VING) structure. X-ray photoelectron spectra (XPS) indicated the seepage of dopants in ZnO nanowires by substitution of Zn. Shallow acceptor levels (Li_Zn, Na_Zn, K_Zn) worked as electron trapping centers for intrinsically n-type ZnO nanowires. Free moving electrons caused a leakage current through the nanowires and depleted their piezoelectric potential. Reverse leakage current is a negative factor for piezoelectric nanogenerators. A reduction in reverse leakage current signifies the rise in output voltage. A gradual rise in output voltage has been witnessed which was in accordance with various doping concentrations. K-doped ZnO nanowires have generated voltages of 0.85 V, 1.48 V, and 1.95 V. For Na-doped ZnO nanowires, the voltages were 1.23 V, 1.73 V, and 2.34 V and the voltages yeilded for Li-doped ZnO nanowires were 1.87 V, 2.63 V, and 3.54 V, respectively. Maximum voltage range has been further enhanced by the surface enrichment (oxidized with O₂ molecules) of ZnO nanowires. Technique has been opted to mitigate the screening effect during an external stress. After 5 h of oxidation in a sealed chamber at 100 ppm, maximum voltage peaks were pronounced to 2.48 V, 3.19 V, and 4.57 V for K, Na, and Li, respectively. A low-cost, high performance mechanical transducer is proposed for self-powered devices.

Room-Temperature Broad-Wavelength-Tunable Single-Mode Lasing from Alloyed CdS1-xSex Nanotripods

Wavelength-tunable semiconductor nanolasers have attracted tremendous attention for their tunable emissions and robust stability, bringing possibilities for various applications, including nanophotonic circuits, solid-state white-light sources, wavelength-converted devices, and on-chip optical communications. Here, we report on the demonstration of broadband-tunable, single-mode nanolasers based on high-quality alloyed single crystalline CdS_1-xSe_x (x = 0-1) nanotripods with well-formed facets fabricated using a conventional CVD approach. Microstructural characterization and optical investigations reveal that these structures are crystalline with composition-tunable CdS_1-xSe_x alloys. Microphotoluminescence spectra and mapping of these nanotripods exhibit emissions with continuous wavelengths from 509 to 712 nm, further demonstrating that the CdS_1-xSe_x alloys have tunable bandgaps due to the composition gradient. Additionally, under a pulse laser illumination, room-temperature single-mode lasing is clearly observed from these nanotripods cavities, which shows almost identical emission lines with a high-quality factor of ∼1231. More importantly, wavelength continuously tunable nanolasers from 520 to 738 nm are successfully constructed using these bandgap gradient nanotripods. The capability to fabricate high-quality tunable nanolasers represents a significant step toward high-integration optical circuits and photonics communications.

On-wire bandgap engineering via a magnetic-pulled CVD approach and optoelectronic applications of one-dimensional nanostructures

Since the emergence of one-dimensional nanostructures, in particular the bandgap-graded semiconductor nanowires/ribbons or heterostructures, lots of attentions have been devoted to unraveling their intriguing properties and finding applications for future developments in optical communications and integrated optoelectronic devices. In particular, the ability to modulate the bandgap along a single nanostructure greatly enhances their functionalities in optoelectronics, and hence these studies are essential to pave the way for future high-integrated devices and circuits. Herein, we focus on a brief review on recent advances about the synthesis through a magnetic-pulled chemical vapor deposition approach, crystal structure and the unique optical and electronic properties of on-nanostructures semiconductors, including axial nanowire heterostructures, asymmetrical/symmetric bandgap gradient nanowires, lateral heterostructure nanoribbons, lateral bandgap graded ribbons. Moreover, recent developments in applications using low-dimensional bandgap modulated structures, especially in bandgap-graded nanowires and heterostructures, are summarized, including multicolor lasers, waveguides, white-light sources, photodetectors, and spectrometers, where the main strategies and unique features are addressed. Finally, future outlook and perspectives for the current challenges and the future opportunities of one-dimensional nanostructures with bandgap engineering are discussed to provide a roadmap future development in the field.

Inducing Strong Light-Matter Coupling and Optical Anisotropy in Monolayer MoS2 with High Refractive Index Nanowire

Mixed-dimensional heterostructures combine the merits of materials of different dimensions; therefore, they represent an advantageous scenario for numerous technological advances. Such an approach can be exploited to tune the physical properties of two-dimensional (2D) layered materials to create unprecedented possibilities for anisotropic and high-performance photonic and optoelectronic devices. Here, we report a new strategy to engineer the light-matter interaction and symmetry of monolayer MoS₂ by integrating it with one-dimensional (1D) AlGaAs nanowire (NW). Our results show that the photoluminescence (PL) intensity of MoS₂ increases strongly in the mixed-dimensional structure because of electromagnetic field confinement in the 1D high refractive index semiconducting NW. Interestingly, the 1D NW breaks the 3-fold rotational symmetry of MoS₂, which leads to a strong optical anisotropy of up to ∼60%. Our mixed-dimensional heterostructure-based phototransistors benefit from this and exhibit an improved optoelectronic device performance with marked anisotropic photoresponse behavior. Compared with bare MoS₂ devices, our MoS₂/NW devices show ∼5 times enhanced detectivity and ∼3 times higher photoresponsivity. Our results of engineering light-matter interaction and symmetry breaking provide a simple route to induce enhanced and anisotropic functionalities in 2D materials.

Inverse-cavity structure for low-threshold miniature lasers

Creating micro and nano lasers, high threshold gain is an inherent problem that have critically restricted their great technological potentials. Here, we propose an inverse-cavity laser structure where its threshold gain in the shortest-cavity regime is order-of-magnitude lower than the conventional cavity configurations. In the proposed structure, a resonant feedback mechanism efficiently transfers external optical gain to the cavity mode at a higher rate for a shorter cavity, hence resulting in the threshold gain reducing with decreasing cavity length in stark contrast to the conventional cavity structures. We provide a fundamental theory and rigorous numerical analyses confirming the feasibility of the proposed structure. Remarkably, the threshold gain reduces down by a factor ~ 10⁻³ for a vertical-cavity surface-emitting laser structure and ~ 0.17 for a lattice-plasmonic nanocavity structure. Therefore, the proposed approach may produce extremely efficient miniature lasers desirable for variety of applications potentially beyond the present limitations.

ZnO Nanorods as Antireflection Layers in Metal-Insulator-Semiconductor Solar Cells

One of the most promising techniques for manufacturing low-cost solar cells is a solution processing method. In this study, it is proposed that solution-grown ZnO nanorods (NRs) are used as antireflection coatings on metal-insulator-semiconductor (MIS) solar cells with sol-gel SiO2. Except Al electrodes prepared by thermal evaporation, no other vacuum process was utilized during fabrication. The ZnO NRs were produced with a hydrothermal method and suppressed Fresnel reflection. With the solution-grown ZnO NRs, it was observed the average reflectance of the MIS solar cell decreased from 38.7% to 15.8%, and the short circuit density (JSC) increased from 5.22 mA/cm2 to 6.71 mA/cm2 (28.4% enhancement). Meanwhile, the open circuit voltage (VOC) was improved from 0.39 V to 0.47 V owing to a passivation effect. The MIS solar cell with the ZnO NRs exhibited a 35.5% efficiency enhancement compared to that without ZnO NRs. The performance improvement in MIS solar cells with ZnO NRs could be due to multiple reflections of an incident light between the vertically arranged NRs, and then light coupling into the cell. The results show a potential application of ZnO NRs for the performance enhancement of MIS solar cells.

Electrically driven single microwire-based single-mode microlaser

Engineering the lasing-mode oscillations effectively within a laser cavity is a relatively updated attentive study and perplexing issue in the field of laser physics and applications. Herein, we report a realization of electrically driven single-mode microlaser, which is composed of gallium incorporated zinc oxide microwire (ZnO:Ga MW) with platinum nanoparticles (PtNPs, d ~ 130 nm) covering, a magnesium oxide (MgO) nanofilm, a Pt nanofilm, and a p-type GaN substrate. The laser cavity modes could resonate following the whispering-gallery mode (WGM) among the six side surfaces by total internal reflection, and the single-mode lasing wavelength is centered at 390.5 nm with a linewidth of about 0.18 nm. The cavity quality factor Q is evaluated to about 2169. In the laser structure, the usage of Pt and MgO buffer layers can be utilized to engineer the band alignment of ZnO:Ga/GaN heterojunction, optimize the p-n junction quality and increase the current injection. Thus, the well-designed device structure can seamlessly unite the electron-hole recombination region, the gain medium, and optical microresonator into the PtNPs@ZnO:Ga wire perfectly. Such a single MW microlaser is essentially single-mode regardless of the gain spectral bandwidth. To study the single-mode operation, PtNPs working as superabsorber can engineering the multimode lasing actions of ZnO:Ga MWs even if their dimensions are typically much larger than that of lasing wavelength. Our findings can provide a straightforward and effective scheme to develop single-mode microlaser devices based on one-dimensional wire semiconductors.

Ultrasimple and Ultrafast Method of Optical Modulation by Perovskite Quantum Dot Attachment to a Graphene Surface

Optical modulation is the process of modifying the structure and elemental composition of materials so that the main optical parameters, including amplitude, frequency, and phase, are changed. Currently, much research attention has been directed toward ultrafast dynamics, but the process of modulation is often complex. To simplify the optical modulation process and improve the optical properties of perovskites for semiconductor quantum dot (QD) lasers, the process and physical mechanism underlying graphene QD ultrafast modulation of the optical properties of perovskite CsPbBr₃ QDs were investigated. The typical cubic structure and square shape of CsPbBr₃ QDs were characterized by transmission electron microscopy and X-ray diffraction, respectively. A luminescent peak centered near 540 nm and Stokes shift of 21.34 nm of CsPbBr₃ QDs without graphene QDs were measured by absorption and photoluminescence spectroscopy. A maximum modulation shift of 133 nm and a modulation depth of 900% were achieved in CsPbBr₃ with graphene. The results indicated that graphene QDs had the best modulation effect on perovskites when the drop volume was 0.05 mL. The process of ultrafast optical modulation via graphene QDs occurring within 1 ps was confirmed by the transient absorption spectrum. The modulation mechanism of graphene to perovskites is presented for guidance. This paper can be used as a reference for the optical modulation of perovskite materials.

Effects of Waste-Derived ZnO Nanoparticles against Growth of Plant Pathogenic Bacteria and Epidermoid Carcinoma Cells

Green synthesis of zinc oxide nanoparticles (ZnO NPs) has recently gained considerable interest because it is simple, environmentally friendly, and cost-effective. This study therefore aimed to synthesize ZnO NPs by utilizing bioactive compounds derived from waste materials, mangosteen peels, and water hyacinth crude extracts and investigated their antibacterial and anticancer activities. As a result, X-ray diffraction analysis confirmed the presence of ZnO NPs without impurities. An ultraviolet–visible absorption spectrum showed a specific absorbance peak around 365 nm with an average electronic band gap of 2.79 eV and 2.88 eV for ZnO NPs from mangosteen peels and a water hyacinth extract, respectively. An SEM analysis displayed both spherical shapes of ZnO NPs from the mangosteen peel extract (dimension of 154.41 × 172.89 nm) and the water hyacinth extract (dimension of 142.16 × 160.30 nm). Fourier transform infrared spectroscopy further validated the occurrence of bioactive molecules on the produced ZnO NPs. By performing an antibacterial activity assay, these green synthesized ZnO NPs significantly inhibited the growth of Xanthomonas oryzae pv. oryzae, Xanthomonas axonopodis pv. citri, and Ralstonia solanacearum. Moreover, they demonstrated potent anti-skin cancer activity in vitro. Consequently, this study demonstrated the possibility of using green-synthesized ZnO NPs in the development of antibacterial or anticancer agents. Furthermore, this research raised the prospect of increasing the value of agricultural waste.

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitigation is of great interest in photovoltaics as it opens up more material combinations for use in devices. Herein, an overview of the vapor-liquid-solid and selective area epitaxy growth approaches applied to zinc phosphide (Zn₃P₂), an earth-abundant absorber material, is presented. First, we show how different morphologies, including nanowires, nanopyramids, and thin films, can be achieved by tuning the growth conditions and growth mechanisms. The growth conditions are also shown to greatly impact the defect structure and composition of the grown material, which can vary considerably from the ideal stoichiometry (Zn₃P₂). Finally, the functional properties are characterized. The direct band gap could accurately be determined at 1.50 ± 0.1 eV, and through complementary density functional theory calculations, we can identify a range of higher-order band gap transitions observed through valence electron energy loss spectroscopy and cathodoluminescence. Furthermore, we outline the formation of rotated domains inside of the material, which are a potential origin of defect transitions that have been long observed in zinc phosphide but not yet explained. The basic understanding provided reinvigorates the potential use of earth-abundant II-V semiconductors in photovoltaic technology. Moreover, the transferrable nanoscale growth approaches have the potential to be applied to other material systems, as they mitigate the constraints of substrate-material combinations causing interface defects.

Self-frequency-conversion nanowire lasers

Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III-V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths, as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In_0.16Ga_0.84As core/shell NW lasing at 1016 nm, an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation, as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths, multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers, even to the deep ultraviolet and THz range.

α-BaF2 Nanoparticle Substrate-Enabled γ-CsPbI3 Heteroepitaxial Growth for Efficient and Bright Deep-Red Light-Emitting Diodes

All-inorganic CsPbI₃ perovskite is attractive for deep-red light-emitting diodes (LEDs) because of its excellent carrier mobility, high color purity, and solution processability. However, the high phase transition energy barrier of optically active CsPbI₃ black phase hinders the fabrication of efficient and bright LEDs. Here, we report a novel α-BaF₂ nanoparticle substrate-promoted solution-processable heteroepitaxial growth to overcome this hindrance and obtain high-quality optically active γ-CsPbI₃ thin films, achieving efficient and bright deep-red LEDs. We unravel that the highly exposed planes on the α-BaF₂ nanoparticle-based heteroepitaxial growth substrate have a 99.5% lattice matching degree with the (110) planes of γ-CsPbI₃. This ultrahigh lattice matching degree initiates solution-processed interfacial strain-free epitaxial growth of low-defect and highly oriented γ-CsPbI₃ thin films on the substrate. The obtained γ-CsPbI₃ thin films are uniform, smooth, and highly luminescent, based on which we fabricate efficient and bright deep-red LEDs with a high peak external quantum efficiency of 14.1% and a record luminance of 1325 cd m^-2.

Enhanced Photoluminescence and Electrical Properties of n-Al-Doped ZnO Nanorods/p-B-Doped Diamond Heterojunction

The hydrothermal approach has been used to fabricate a heterojunction of n-aluminum-doped ZnO nanorods/p-B-doped diamond (n-Al:ZnO NRs/p-BDD). It exhibits a significant increase in photoluminescence (PL) intensity and a blue shift of the UV emission peak when compared to the n-ZnO NRs/p-BDD heterojunction. The current voltage (I-V) characteristics exhibit excellent rectifying behavior with a high rectification ratio of 838 at 5 V. The n-Al:ZnO NRs/p-BDD heterojunction shows a minimum turn-on voltage (0.27 V) and reverse leakage current (0.077 μA). The forward current of the n-Al:ZnO NRs/p-BDD heterojunction is more than 1300 times than that of the n-ZnO NRs/p-BDD heterojunction at 5 V. The ideality factor and the barrier height of the Al-doped device were found to decrease. The electrical transport behavior and carrier injection process of the n-Al:ZnO NRs/p-BDD heterojunction were analyzed through the equilibrium energy band diagrams and semiconductor theoretical models.

Excitation-polarization-dependent dynamics of polariton condensates in the ZnO microwire at room temperature

Based on ZnO microcavities with high quality factors, where the gain medium exhibits confinement of wave packets due to the intrinsically formed whispering gallery microcavity, strong coupling between excitons and cavity photons can be obtained at room temperature resulting in hybrid quasiparticles, e.g. exciton polaritons. In this work, polariton condensation is induced under the non-resonant excitation by linearly polarized femtosecond laser pulses with different polarization directions. The dynamical angle-resolvedk-space spectra of the photoluminescence emission of polariton condensates are measured with sub-picosecond resolution by the self-developed femtosecond angle-resolved spectroscopic imaging technique. Our results show that the ultrafast dynamics of polariton condensation is sensitive to the polarization direction of the excitation pulses which can be explained qualitatively by the combined effect of selective excitation of distinct exciton modes in the sample and the effective coupling strength of the excitation pulses in the ZnO microcavity for various polarization directions. This work strengthened the understanding of the condensation process for cavity exciton polaritons at room temperature.