Unraveling the Oxygen Vacancy-Performance Relationship in Perovskite Oxides at Atomic Precision via Precise Synthesis

Understanding the fundamental effect of the oxygen vacancy atomic structure in perovskite oxides on catalytic properties remains challenging due to diverse facets, surface sites, defects, etc. in traditional powder catalysts and the inherent structural complexity. Through quantitative synthesis of tetrahedral (LaCoO2.5-T), pyramidal (LaCoO2.5-P), and octahedral (LaCoO3) epitaxial thin films as model catalysts, we demonstrate the reactivity orders of active-site geometrical configurations in oxygen-deficient perovskites during the CO oxidation model reaction: CoO4 tetrahedron > CoO6 octahedron > CoO5 pyramid. Ambient-pressure Co L-edge and O K-edge XAS spectra clarify the dynamic evolutions of active-site electronic structures during realistic catalytic processes and highlight the important roles of defect geometrical structures. In addition, in situ XAS and resonant inelastic X-ray scattering spectra and density functional theory calculations directly reveal the nature of high reactivity for CoO4 sites and that the derived shallow-acceptor defect levels in the band structure facilitate the adsorption and activation of reactive gases, resulting in more than 23-fold enhancement for catalytic reaction rates than CoO5 sites.

Crystallographic Pathways to Tailoring Metal-Insulator Transition through Oxygen Transport in VO2

The metal-insulator (MI) transition of vanadium dioxide (VO2) is effectively modulated by oxygen vacancies, which decrease the transition temperature and insulating resistance. Oxygen vacancies in thin films can be driven by oxygen transport using electrochemical potential. This study delves into the role of crystallographic channels in VO2 in facilitating oxygen transport and the subsequent tuning of electrical properties. A model system is designed with two types of VO2 thin films: (100)- and (001)-oriented, where channels align parallel and perpendicular to the surface, respectively. Growing an oxygen-deficient TiO2 layer on these VO2 films prompted oxygen transport from VO2 to TiO2. Notably, in (001)-VO2 film, where oxygen ions move along the open channels, the oxygen migration deepens the depleted region beyond that in (100)-VO2, leading to more pronounced changes in metal-insulator transition behaviors. The findings emphasize the importance of understanding the intrinsic crystal structure, such as channel pathways, in controlling ionic defects and customizing electrical properties for applications.

Field-Driven Solid-State Defect Control of Bilayer Switching Devices

We develop a framework for controlling and investigating reversible ionic transfer between two solid metal oxides layers by examining field-driven changes in electrical properties of the thin film bilayer oxide system Pr0.1Ce0.9O2/La1.85Ce0.15CuO4 (PCO/LCCO). We show that we can reversibly redistribute oxygen ions by applied voltage in a highly controlled and reversible fashion near ambient temperatures over large oxygen ion activity limits, which, for the first time, is directly interpretable by defect chemical models. This allowed us to determine how defect concentrations in each layer systematically varied with voltage and the subsequent impact on each film's conductance. These results showcase the relevance and applicability of defect chemical models, traditionally considered only at elevated temperatures, to the development of bilayer devices of importance to neuromorphic memory applications. This allows for a more systematic approach for studying and understanding the solid-solid exchange process in electrochemically controlled microelectronic devices. Moreover, our work sets the foundation for the development of large-area field-driven defect-controlled bilayer switching devices with potential application to a broad array of functionally modulated devices.

Free-space direct nanoscale 3D printing of metals and alloys enabled by two-photon decomposition and ultrafast optical trapping

Nanoscale three-dimensional (3D) printing of metals and alloys has faced challenges in speed, miniaturization and deficiency in material properties. Traditional nanomanufacturing relies on lithographic methods with material constraints, limited resolution and slow layer-by-layer processing. This work introduces polymer-free techniques using two-photon decomposition and optical force trapping for free-space direct 3D printing of metals, metal oxides and multimetallic alloys with resolutions beyond optical limits. This method involves the two-photon decomposition of metal atoms from precursors, rapid assembly into nanoclusters via optical forces and ultrafast laser sintering, yielding dense, smooth nanostructures. Enhanced near-field optical forces from laser-induced localized surface plasmon resonance facilitate nanocluster aggregation. Our approach eliminates the need for organic materials, layer-by-layer printing and complex post-processing. Printed Mo nanowires show an excellent mechanical performance, closely resembling the behaviour of single crystals, while Mo-Co-W alloy nanowires outperform Mo nanowires. This innovation promises the customizable 3D nanoprinting of high-quality metals and metal oxides, impacting nanoelectronics, nanorobotics and advanced chip manufacturing.

3D oxygen vacancy distribution and defect-property relations in an oxide heterostructure

Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO3)n/(SrTiO3)n superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO3)9/(LuFe2O4)1 superlattices, mapping correlations between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 1014 cm-2, congruent with the formula-unit-thick ferrimagnetic LuFe2O4 layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO3 and LuFe2O4 layers, respectively. The results demonstrate pronounced interactions between oxygen vacancies and the multiferroic order in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures.

How to Correctly Analyze 2p X-ray Photoelectron Spectra of 3d Transition-Metal Oxides: Pitfalls and Principles

Nanomaterials based on transition-metal oxides (TMOs) that contain late 3d transition metals (e.g., Mn, Fe, Co, Ni) have diverse properties and functionality that are related to the oxidation state of constituent transition-metal (TM) cations. X-ray photoelectron spectroscopy (XPS) of TM 2p orbitals has been widely used to quantify the TM oxidation state of TMOs. However, 2p XPS spectra of late 3d TM cations usually have complicated shapes due to the charge transfer between the TM cation and oxygen ligands (anions), which makes the analysis highly nontrivial. In this article, we will examine the validity of commonly used analysis methods based on either peak fitting or the shift of binding energy (BE). The different origins of the BE shift in XPS spectra will be discussed. We will then introduce a model to reproduce the complex shapes of TM 2p spectra, based on fundamental parameters that describe the TMO electronic structure.

Hydrogen-Driven Low-Temperature Topotactic Transition in Nanocomb Cobaltite for Ultralow Power Ionic-Magnetic Coupled Applications

We reversibly control ferromagnetic-antiferromagnetic ordering in an insulating ground state by annealing tensile-strained LaCoO3 films in hydrogen. This ionic-magnetic coupling occurs due to the hydrogen-driven topotactic transition between perovskite LaCoO3 and brownmillerite La2Co2O5 at a lower temperature (125-200 °C) and within a shorter time (3-10 min) than the oxygen-driven effect (500 °C, tens of hours). The X-ray and optical spectroscopic analyses reveal that the transition results from hydrogen-driven filling of correlated electrons in the Co 3d-orbitals, which successively releases oxygen by destabilizing the CoO6 octahedra into CoO4 tetrahedra. The transition is accelerated by surface exchange, diffusion of hydrogen in and oxygen out through atomically ordered oxygen vacancy "nanocomb" stripes in the tensile-strained LaCoO3 films. Our ionic-magnetic coupling with fast operation, good reproducibility, and long-term stability is a proof-of-principle demonstration of high-performance ultralow power magnetic switching devices for sensors, energy, and artificial intelligence applications, which are keys for attaining carbon neutrality.

First-principles study of oxygen vacancies in LiNbO3-type ferroelectrics

LiNbO3-type ferroelectric oxides, as an important class of non-centrosymmetric compounds, have received great attention due to their important and rich properties. Although oxygen vacancies are widely present, studies of them in LiNbO3-type ferroelectric oxides are rare. In this article, we consider three representative LiNbO3-type ferroelectric oxide materials LiNbO3, ZnTiO3 and ZnSnO3 to study the impact of oxygen vacancy doping using first principles calculations. LiNbO3 and ZnTiO3 have ferroelectrically active cations Nb5+ and Ti4+, while ZnSnO3 does not have ferroelectrically active cations. The distribution of the oxygen vacancy induced electrons are quite different in the three materials even though they have similar structures. In oxygen deficient LiNbO3-δ (δ = 0.083/f.u.), electrons are itinerant, while in ZnTiO3-δ and ZnSnO3-δ (δ = 0.083/f.u.) the electrons are localized. These results provide guidance for the application of oxygen vacancies in LiNbO3-type ferroelectric material devices.

Combined Theoretical and Experimental Study of the Moiré Dislocation Network at the SrTiO3-(La,Sr)(Al,Ta)O3 Interface

Recently, a highly ordered Moiré dislocation lattice was identified at the interface between a SrTiO3 (STO) thin film and the (LaAlO3)0.3(Sr2TaAlO6)0.7 (LSAT) substrate. A fundamental understanding of the local ionic and electronic structures around the dislocation cores is crucial to further engineer the properties of these complex multifunctional heterostructures. Here, we combine experimental characterization via analytical scanning transmission electron microscopy with results of molecular dynamics and density functional theory calculations to gain insights into the structure and defect chemistry of these dislocation arrays. Our results show that these dislocations lead to undercoordinated Ta/Al cations at the dislocation core, where oxygen vacancies can easily be formed, further facilitated by the presence of cation vacancies. The reduced Ti3+ observed experimentally at the dislocations by electron energy-loss spectroscopy is a consequence of both the structure of the dislocation itself and of the electron doping due to oxygen vacancy formation. Finally, the experimentally observed Ti diffusion into the LSAT around the dislocation core occurs only together with cation vacancy formation in the LSAT or Ta diffusion into STO.

Modulation-doping a correlated electron insulator

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2-especially without inducing structural changes-has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard X-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5 × 1021 cm-3 without inducing any measurable structural changes. We find that the MIT temperature (TMIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.

Coexistent VO2 (M) and VO2 (B) Polymorphous Thin Films with Multiphase-Driven Insulator-Metal Transition

Reversible insulator-metal transition (IMT) and structure phase change in vanadium dioxide (VO₂) remain vital and challenging with complex polymorphs. It is always essential to understand the polymorphs that coexist in desired VO₂ materials and their IMT behaviors. Different electrical properties and lattice alignments in VO₂ (M) and VO₂ (B) phases have enabled the creation of versatile functional devices. Here, we present polymorphous VO₂ thin films with coexistent VO₂ (M) and VO₂ (B) phases and phase-dependent IMT behaviors. The presence of VO₂ (B) phases may induce lattice distortions in VO₂ (M). The plane spacing of (011)_M in the VO₂ (M) phase becomes widened, and the V-V and V-O vibrations shift when more VO₂ (B) phase exists in the VO₂ (M) matrix. Significantly, the coexisting VO₂ (B) phases promote the IMT temperature of the polymorphous VO₂ thin films. We expect that such coexistent polymorphs and IMT variations would help us to understand the microstructures and IMT in the desired VO₂ materials and contribute to advanced electronic transistors and optoelectronic devices.

Charged species redistribution at electrochemical interfaces: a model system of the zirconium oxide/water interface

Quantifying the local distribution of charged defects in the solid state and charged ions in liquid solution near the oxide/liquid interface is key to understanding a range of important electrochemical processes, including oxygen reduction and evolution, corrosion and hydrogen evolution reactions. Based on a grand canonical approach relying on the electrochemical potential of individual charged species, a unified treatment of charged defects on the solid side and ions on the water side can be established. This approach is compatible with first-principles calculations where the formation free energy of individual charged species can be calculated and modulated by imposing certain electrochemical potential. Herein, we apply this framework to a system of monoclinic ZrO₂(1̄11)/water interface. The structure, defect chemistry and dynamical behavior of the electric double layer and space charge layer are analyzed with different pH values, water chemistry and doping elements in zirconium oxide. The model predicts ZrO₂ solubility in water and the point of zero charge consistent with the experimentally-measured values. We reveal the effect of dopant elements on the concentrations of oxygen and hydrogen species at the surface of the ZrO₂ passive layer in contact with water, uncovering an intrinsic trade-off between oxygen diffusion and hydrogen pickup during the corrosion of zirconium alloys. The solid/water interface model established here serves as the basis for modeling reaction and transport kinetics under doping and water chemistry effects.

In-plane charged domain walls with memristive behaviour in a ferroelectric film

Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications^1-3. The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO₃ ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO₃ film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Manipulation of current rectification in van der Waals ferroionic CuInP2S6

Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.

Dynamics of Anisotropic Oxygen-Ion Migration in Strained Cobaltites

Orientation control of the oxygen vacancy channel (OVC) is highly desirable for tailoring oxygen diffusion as it serves as a fast transport channel in ion conductors, which is widely exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ion hopping toward preferential vacant sites is a key to clarifying migration pathways. Here we report anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in situ thermal activation in atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to the OVC, determine the crucial role of the tolerance factor for OVC stability, and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable to ionic-oxide electronics.

Migration Kinetics of Surface Ions in Oxygen-Deficient Perovskite During Topotactic Transitions

Oxygen diffusivity and surface exchange kinetics underpin the ionic, electronic, and catalytic functionalities of complex multivalent oxides. Towards understanding and controlling the kinetics of oxygen transport in emerging technologies, it is highly desirable to reveal the underlying lattice dynamics and ionic activities related to oxygen variation. In this study, the evolution of oxygen content is identified in real-time during the progress of a topotactic phase transition in La_0.7 Sr_0.3 MnO_3-δ epitaxial thin films, both at the surface and throughout the bulk. Using polarized neutron reflectometry, a quantitative depth profile of the oxygen content gradient is achieved, which, alongside atomic-resolution scanning transmission electron microscopy, uniquely reveals the formation of a novel structural phase near the surface. Surface-sensitive X-ray spectroscopies further confirm a significant change of the electronic structure accompanying the transition. The anisotropic features of this novel phase enable a distinct oxygen diffusion pathway in contrast to conventional observation of oxygen motion at moderate temperatures. The results provide insights furthering the design of solid oxygen ion conductors within the framework of topotactic phase transitions.

Electronic-structure evolution of SrFeO3-xduring topotactic phase transformation

Oxygen-vacancy-induced topotactic phase transformation between the ABO_2.5brownmillerite structure and the ABO₃perovskite structure attracts ever-increasing attention due to the perspective applications in catalysis, clean energy field, and memristors. However, a detailed investigation of the electronic-structure evolution during the topotactic phase transformation for understanding the underlying mechanism is highly desired. In this work, multiple analytical methods were used to explore evolution of the electronic structure of SrFeO_3-xthin films during the topotactic phase transformation. The results indicate that the increase in oxygen content induces a new unoccupied state of O 2pcharacter near the Fermi energy, inducing the insulator-to-metal transition. More importantly, the hole states are more likely constrained to thedx²-y²orbital than to thed3z²-r²orbital. Our results reveal an unambiguous evolution of the electronic structure of SrFeO_3-xfilms during topotactic phase transformation, which is crucial not only for fundamental understanding but also for perspective applications such as solid-state oxide fuel cells, catalysts, and memristor devices.

Solid-State Electrochemical Switch of Superconductor-Metal-Insulators

Controlling the oxygen content can manipulate the electrical conductivity of transition metal oxides (TMOs). Although the superconductor-metal-insulator transition is useful for functional devices, an electrical path must be developed to manipulate the oxygen deficiency (δ) while maintaining the solid state. YBa₂Cu₃O_7-δ (YBCO, 0 ≤ δ ≤ 1) is a high transition temperature (T_c) TMO that can be modulated from a superconductor (T_c ≈ 92 K when δ = 0) to an insulator (δ ≈ 1). Here, we show a simple and efficient way to manipulate δ in YBCO films using a solid-state electrochemical redox treatment. Applying a negative voltage injects oxide ions to the YBCO films, increasing T_c. Employing a positive voltage suppresses the superconducting transition and modulates the electrical conductivity. The present results demonstrate that the superconductor-metal-insulator transition of YBCO is modulated electrochemically in the solid state, opening possibilities of superconducting oxide-based device applications.

Ferroelectricity promoted by cation/anion divacancies in SrMnO3

We investigate the effect of polar Sr-O vacancy pairs on the electric polarization of SrMnO3 (SMO) thin films using density functional theory (DFT) calculations. This is motivated by indications that ferroelectricity in complex oxides can be engineered by epitaxial strain but also via the defect chemistry. Our results suggest that intrinsic doping by cation and anion divacancies can induce a local polarization in unstrained non-polar SMO thin films and that a ferroelectric state can be stabilized below the critical strain of the stoichiometric material. This polarity is promoted by the electric dipole associated with the defect pair and its coupling to the atomic relaxations upon defect formation that polarize a region around the defect. This suggests that polar defect pairs affect the strain-dependent ferroelectricity in semiconducting antiferromagnetic SMO. For metallic ferromagnetic SMO we find a much weaker coupling between the defect dipole and the polarization due to much stronger electronic screening. Coupling of defect-pair dipoles at high enough concentrations along with their switchable orientation thus makes them a promising route to affect the ferroelectric transition in complex transition metal oxide thin films.

Coexisting commensurate and incommensurate charge ordered phases in CoO

The subtle interplay of strong electronic correlations in a distorted crystal lattice often leads to the evolution of novel emergent functionalities in the strongly correlated materials (SCM). Here, we unravel such unprecedented commensurate (COM) and incommensurate (ICOM) charge ordered (CO) phases at room temperature in a simple transition-metal mono-oxide, namely CoO. The electron diffraction pattern unveils a COM ([Formula: see text]=[Formula: see text] and ICOM ([Formula: see text]) periodic lattice distortion. Transmission electron microscopy (TEM) captures unidirectional and bidirectional stripe patterns of charge density modulations. The widespread phase singularities in the phase-field of the order parameter (OP) affirms the abundant topological disorder. Using, density functional theory (DFT) calculations, we demystify the underlying electronic mechanism. The DFT study shows that a cation disordering ([Formula: see text]) stabilizes Jahn-Teller (JT) distortion and localized aliovalent [Formula: see text] states in CoO. Therefore, the lattice distortion accompanied with mixed valence states ([Formula: see text]) states introduces CO in CoO. Our findings offer an electronic paradigm to engineer CO to exploit the associated electronic functionalities in widely available transition-metal mono-oxides.

Atomic Stripe Formation in Infinite-Layer Cuprates

High-temperature superconductivity appears in cuprate materials that have been tuned in a way where the copper-oxygen bond configuration and coordination is in a state of minimal energy. In competition with the Jahn-Teller effect, which impedes the formation of infinitely connected CuO₂ planes, the state of minimal energy persists for planar copper-oxygen bond length variations of up to 10%. We have synthesized the infinite-layer phases of CaCuO₂ and SrCuO₂ as single-crystalline films using molecular beam epitaxy and performed in-plane scanning transmission electron microscopy mapping. For the infinite-layer phase of CaCuO₂ with a short Cu-O bond length, the CuO₂ planes maintain their minimal energy by forming distinguished atomic stripes. In contrast, atomic stripe formation does not occur in the infinite-layer phase of SrCuO₂, which has a larger Cu-O bond length. The polar field provided by the charge reservoir layer in cuprates with infinitely connected CuO₂ planes holds the key over the emergence of superconductivity and is vital to maintain infinitely connected CuO₂ planes themselves.

Hydrogen Control of Double Exchange Interaction in La0.67 Sr0.33 MnO3 for Ionic-Electric-Magnetic Coupled Applications

The dynamic tuning of ion concentrations has attracted significant attention for creating versatile functionalities of materials, which are impossible to reach using classical control knobs. Despite these merits, the following fundamental questions remain: how do ions affect the electronic bandstructure, and how do ions simultaneously change the electrical and magnetic properties? Here, by annealing platinum-dotted La_0.67 Sr_0.33 MnO₃ films in hydrogen and argon at a lower temperature of 200 °C for several minutes, a reversible change in resistivity is achieved by three orders of magnitude with tailored ferromagnetic magnetization. The transition occurs through the tuning of the double exchange interaction, ascribed to an electron-doping-induced and/or a lattice-expansion-induced modulation, along with an increase in the hydrogen concentration. High reproducibility, long-term stability, and multilevel linearity are appealing for ionic-electric-magnetic coupled applications.

Structural Phase Transitions to 2D and 3D Oxygen Vacancy Patterns in a Perovskite Film Induced by Electrical and Mechanical Nanoprobing

Oxygen vacancy migration and ordering in perovskite oxides enable manipulation of material properties through changes in the cation oxidation state and the crystal lattice. In thin-films, oxygen vacancies conventionally order into equally spaced planes. Here, it is shown that the planar 2D symmetry is broken if a mechanical nanoprobe restricts the chemical lattice expansion that the vacancies generate. Using in situ scanning transmission electron microscopy, a transition from a perovskite structure to a 3D vacancy-ordered phase in an epitaxial La_2/3 Sr_1/3 MnO_{3- δ} film during voltage pulsing under local mechanical straining is imaged. The never-before-seen ordering pattern consists of a complex network of distorted oxygen tetrahedra, pentahedra, and octahedra that, together, produce a corrugated atomic structure with lattice constants varying between 3.5 and 4.6 Å. The giant lattice distortions respond sensitively to strain variations, offering prospects for non-volatile nanoscale physical property control driven by voltage and gated by strain.

Controlled Sign Reversal of Electroresistance in Oxide Tunnel Junctions by Electrochemical-Ferroelectric Coupling

The persistence of ferroelectricity in ultrathin layers relies critically on screening or compensation of polarization charges which otherwise destabilize the ferroelectric state. At surfaces, charged defects play a crucial role in the screening mechanism triggering novel mixed electrochemical-ferroelectric states. At interfaces, however, the coupling between ferroelectric and electrochemical states has remained unexplored. Here, we make use of the dynamic formation of the oxygen vacancy profile in the nanometer-thick barrier of a ferroelectric tunnel junction to demonstrate the interplay between electrochemical and ferroelectric degrees of freedom at an oxide interface. We fabricate ferroelectric tunnel junctions with a La_{0.7}Sr_{0.3}MnO_{3} bottom electrode and BaTiO_{3} ferroelectric barrier. We use poling strategies to promote the generation and transport of oxygen vacancies at the metallic top electrode. Generated oxygen vacancies control the stability of the ferroelectric polarization and modify its coercive fields. The ferroelectric polarization, in turn, controls the ionization of oxygen vacancies well above the limits of thermodynamic equilibrium, triggering the build up of a Schottky barrier at the interface which can be turned on and off with ferroelectric switching. This interplay between electronic and electrochemical degrees of freedom yields very large values of the electroresistance (more than 10^{6}% at low temperatures) and enables a controlled switching between clockwise and counterclockwise switching modes in the same junction (and consequently, a change of the sign of the electroresistance). The strong coupling found between electrochemical and electronic degrees of freedom sheds light on the growing debate between resistive and ferroelectric switching in ferroelectric tunnel junctions, and moreover, can be the source of novel concepts in memory devices and neuromorphic computing.

Ultrafast solid-liquid intercalation enabled by targeted microwave energy delivery

In chemical reactions, the breaking and formation of chemical bonds usually need external energy to overcome the activation barriers. Conventional energy delivery transfers energy from heating sources via various media, hence losing efficiency and inducing side reactions. In contrast, microwave (MW) heating is known to be highly energy efficient through dipole interaction with polar media, but how exactly it transmits energy to initiate chemical reactions has been unknown. Here, we report a rigorous determination of energy delivery mechanisms underlying MW-enabled rapid hydrothermal synthesis, by monitoring the structure and temperature of all the involved components as solid-liquid intercalation reaction occurs using in situ synchrotron techniques. We reveal a hitherto unknown direct energy transmission between MW irradiation source and the targeted reactants, leading to greatly reduced energy waste, and so the ultrafast kinetics at low temperature. These findings open up new horizons for designing material synthesis reactions of high efficiency and precision.

Metal-insulator transition tuned by oxygen vacancy migration across TiO2/VO2 interface

Oxygen defects are essential building blocks for designing functional oxides with remarkable properties, ranging from electrical and ionic conductivity to magnetism and ferroelectricity. Oxygen defects, despite being spatially localized, can profoundly alter global properties such as the crystal symmetry and electronic structure, thereby enabling emergent phenomena. In this work, we achieved tunable metal–insulator transitions (MIT) in oxide heterostructures by inducing interfacial oxygen vacancy migration. We chose the non-stoichiometric VO_2-δ as a model system due to its near room temperature MIT temperature. We found that depositing a TiO₂ capping layer on an epitaxial VO₂ thin film can effectively reduce the resistance of the insulating phase in VO₂, yielding a significantly reduced R_OFF/R_ON ratio. We systematically studied the TiO₂/VO₂ heterostructures by structural and transport measurements, X-ray photoelectron spectroscopy, and ab initio calculations and found that oxygen vacancy migration from TiO₂ to VO₂ is responsible for the suppression of the MIT. Our findings underscore the importance of the interfacial oxygen vacancy migration and redistribution in controlling the electronic structure and emergent functionality of the heterostructure, thereby providing a new approach to designing oxide heterostructures for novel ionotronics and neuromorphic-computing devices.

Harnessing the topotactic transition in oxide heterostructures for fast and high-efficiency electrochromic applications

Mobile oxygen vacancies offer a substantial potential to broaden the range of optical functionalities of complex transition metal oxides due to their high mobility and the interplay with correlated electrons. Here, we report a large electro-absorptive optical variation induced by a topotactic transition via oxygen vacancy fluidic motion in calcium ferrite with large-scale uniformity. The coloration efficiency reaches ~80 cm² C^-1, which means that a 300-nm-thick layer blocks 99% of transmitted visible light by the electrical switching. By tracking the color propagation, oxygen vacancy mobility can be estimated to be 10^-8 cm² s^-1 V^-1 near 300°C, which is a giant value attained due to the mosaic pseudomonoclinic film stabilized on LaAlO₃ substrate. First-principles calculations reveal that the defect density modulation associated with hole charge injection causes a prominent change in electron correlation, resulting in the light absorption modulation. Our findings will pave the pathway for practical topotactic electrochromic applications.

Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO3

Results of switching behavior of the improper ferroelectric LuFeO₃ are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO₃ . It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.

Local strain-driven migration of oxygen vacancies to apical sites in YBa2Cu3O7-x

It is well known that in the high-temperature superconductor YBa2Cu3O7-x (YBCO), oxygen vacancies (VO) control the carrier concentration, its critical current density and transition temperature. In this work, it is revealed that VO also allows the accommodation of local strain fields caused by large-scale defects within the crystal. We show that the nanoscale strain associated with Y2Ba4Cu8O16 (Y124) intergrowths-that are common defects in YBCO-strongly affect the venue and concentration of VO. Local probe measurements in conjunction with density-functional-theory calculations indicate a strain-driven reordering of VO from the commonly observed CuO chains towards the bridging apical sites located in the BaO plane and bind directly to the superconducting CuO2 planes. Our findings have strong implications on the physical properties of the YBCO, as the presence of apical VO alters the transfer of carriers to the CuO2 planes, confirmed by changes in the Cu and O core-loss edge probed using electron energy loss spectroscopy, and creates structural changes that affect the Cu-O bonds in the superconducting planes. In addition, the revelation of apical VO also has implications on modulating critical current densities and enhancing vortex pinning.

Strain-Inhibited Electromigration of Oxygen Vacancies in LaCoO3

The oxygen vacancy profile in LaCoO₃ exhibits rich phases with distinct structures, symmetries, and magnetic properties. Exploration of the lattice degree of freedom of LaCoO₃ in the transition between these different structural phases may provide a route to enable new functionality in oxide materials with potential applications. To date, the oxygen vacancy profile transition in LaCoO₃ has mainly been induced by transition-metal doping or thermal treatment. Epitaxial strain was proposed to compete with the lattice degree of freedom but has not yet been rationalized. Here, the experimental findings of strain-inhibited structural transition from perovskite to brownmillerite during the electromigration of oxygen vacancies in epitaxial LaCoO₃ thin films are demonstrated. The results indicate that the oxygen vacancy ordering phase induced by the electric field is suppressed locally by both epitaxial strain field and external loads shown by in situ aberration-corrected (scanning)/ transmission electron microscopy. The demonstrated complex interplay between the electric and strain fields in the structural transitions of LaCoO₃ opens up prospects for manipulating new physical properties by external excitations and/or strain engineering of a substrate.

Toward Electrochemical Studies on the Nanometer and Atomic Scales: Progress, Challenges, and Opportunities

Electrochemical reactions and ionic transport underpin the operation of a broad range of devices and applications, from energy storage and conversion to information technologies, as well as biochemical processes, artificial muscles, and soft actuators. Understanding the mechanisms governing function of these applications requires probing local electrochemical phenomena on the relevant time and length scales. Here, we discuss the challenges and opportunities for extending electrochemical characterization probes to the nanometer and ultimately atomic scales, including challenges in down-scaling classical methods, the emergence of novel probes enabled by nanotechnology and based on emergent physics and chemistry of nanoscale systems, and the integration of local data into macroscopic models. Scanning probe microscopy (SPM) methods based on strain detection, potential detection, and hysteretic current measurements are discussed. We further compare SPM to electron beam probes and discuss the applicability of electron beam methods to probe local electrochemical behavior on the mesoscopic and atomic levels. Similar to a SPM tip, the electron beam can be used both for observing behavior and as an active electrode to induce reactions. We briefly discuss new challenges and opportunities for conducting fundamental scientific studies, matter patterning, and atomic manipulation arising in this context.

Controllable defect driven symmetry change and domain structure evolution in BiFeO3 with enhanced tetragonality

Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, the accurate control of the concentration of defects remains a big challenge. In this work, ion implantation, which can provide controllable point defects, allows us to produce a controlled defect driven true super-tetragonal (T) phase with a single-domain-state in ferroelectric BiFeO3 thin films. This point-defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry and induce the stripe multi-nanodomains to a single domain state. By further increasing the injected dose of the He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio of ∼1.3 that has ever been experimentally achieved in BiFeO3. A combination of the morphology change and domain evolution further confirms that the mixed R/MC phase structure transforms to the single-domain-state true tetragonal phase. Moreover, the re-emergence of the R phase and in-plane nanoscale multi-domains after heat treatment reveal the memory effect and reversible phase transition and domain evolution. Our findings demonstrate the reversible control of R-Mc-T-super T symmetry changes (leading to the creation of true T phase BiFeO3 with enhanced tetragonality) and multidomain-single domain structure evolution through controllable defect engineering. This work also provides a pathway to generate large tetragonality (or c/a ratio) that could be extended to other ferroelectric material systems (such as PbTiO3, BaTiO3 and HfO2) which might lead to strong polarization enhancement.

Defect driven spin state transition and the existence of half-metallicity in CoO

We unveil the native defect induced high spin to low spin state transition in [Formula: see text] and half-metallicity in CoO. First principles calculations unravel that, defect density holds a key role in dictating the spin-state transition in [Formula: see text] ion in CoO, and introducing the half-metallicity. Charge transfer in the vicinity of vacancy plane favors the stabilization and coexistence of bivalent [Formula: see text] and trivalent [Formula: see text] ion in CoO. We propose that defect engineering could serve as a route to design the half metallicity in transition metal mono-oxides.

Reversible Control of Physical Properties via an Oxygen-Vacancy-Driven Topotactic Transition in Epitaxial La0.7 Sr0.3 MnO3- δ Thin Films

The vacancy distribution of oxygen and its dynamics directly affect the functional response of complex oxides and their potential applications. Dynamic control of the oxygen composition may provide the possibility to deterministically tune the physical properties and establish a comprehensive understanding of the structure-property relationship in such systems. Here, an oxygen-vacancy-induced topotactic transition from perovskite to brownmillerite and vice versa in epitaxial La_0.7 Sr_0.3 MnO_{3- δ} thin films is identified by real-time X-ray diffraction. A novel intermediate phase with a noncentered crystal structure is observed for the first time during the topotactic phase conversion which indicates a distinctive transition route. Polarized neutron reflectometry confirms an oxygen-deficient interfacial layer with drastically reduced nuclear scattering length density, further enabling a quantitative determination of the oxygen stoichiometry (La_0.7 Sr_0.3 MnO_2.65 ) for the intermediate state. Associated physical properties of distinct topotactic phases (i.e., ferromagnetic metal and antiferromagnetic insulator) can be reversibly switched by an oxygen desorption/absorption cycling process. Importantly, a significant lowering of necessary conditions (temperatures below 100 °C and conversion time less than 30 min) for the oxygen reloading process is found. These results demonstrate the potential applications of defect engineering in the design of perovskite-based functional materials.

Redistribution of native defects and photoconductivity in ZnO under pressure

Control and design of native defects in semiconductors are extremely important for industrial applications. Here, we investigated the effect of external hydrostatic pressure on the redistribution of native defects and their impact on structural phase transitions and photoconductivity in ZnO. We investigated morphologically distinct rod- (ZnO-R) and flower-like (ZnO-F) ZnO microstructures where the latter contains several native defects namely, oxygen vacancies, zinc interstitials and oxygen interstitials. Synchrotron X-ray diffraction reveals pressure-induced irreversible phase transformation of ZnO-F with the emergence of a hexagonal metallic Zn phase due to enhanced diffusion of interstitial Zn during decompression. In contrast, ZnO-R undergoes a reversible structural phase transition displaying a large hysteresis during decompression. We evidenced that the pressure-induced strain and inhomogeneous distribution of defects play crucial roles at structural phase transition. Raman spectroscopy and emission studies further confirm that the recovered ZnO-R appears less defective than ZnO-F. It resulted in lower photocurrent gain and slower photoresponse during time-dependent transient photoresponse with the synergistic application of pressure and illumination (ultra-violet). While successive pressure treatments improved the photoconductivity in ZnO-R, ZnO-F failed to recover even its ambient photoresponse. Pressure-induced redistribution of native defects and the optoelectronic response in ZnO might provide new opportunities in promising semiconductors.

Exploring the Magnetoelectric Coupling at the Composite Interfaces of FE/FM/FE Heterostructures

Multiferroic materials have attracted considerable attention as possible candidates for a wide variety of future microelectronic and memory devices, although robust magnetoelectric (ME) coupling between electric and magnetic orders at room temperature still remains difficult to achieve. In order to obtain robust ME coupling at room temperature, we studied the Pb(Fe_0.5Nb_0.5)O₃/Ni_0.65Zn_0.35Fe₂O₄/Pb(Fe_0.5Nb_0.5)O₃ (PFN/NZFO/PFN) trilayer structure as a representative FE/FM/FE system. We report the ferroelectric, magnetic and ME properties of PFN/NZFO/PFN trilayer nanoscale heterostructure having dimensions 70/20/70 nm, at room temperature. The presence of only (00l) reflection of PFN and NZFO in the X-ray diffraction (XRD) patterns and electron diffraction patterns in Transmission Electron Microscopy (TEM) confirm the epitaxial growth of multilayer heterostructure. The distribution of the ferroelectric loop area in a wide area has been studied, suggesting that spatial variability of ferroelectric switching behavior is low, and film growth is of high quality. The ferroelectric and magnetic phase transitions of these heterostructures have been found at ~575 K and ~650 K, respectively which are well above room temperature. These nanostructures exhibit low loss tangent, large saturation polarization (P_s ~ 38 µC/cm²) and magnetization (M_s ~ 48 emu/cm³) with strong ME coupling at room temperature revealing them as potential candidates for nanoscale multifunctional and spintronics device applications.

Tuning Oxygen Vacancy Diffusion through Strain in SrTiO3 Thin Films

Understanding diffusion of oxygen vacancies in oxides under different external stimuli is crucial for the design of ion-based electronic devices, improvement of catalytic performance, and so forth. In this manuscript, using an external electric field produced by an atomic force microscopy tip, we obtain the room-temperature diffusion coefficient of oxygen-vacancies in thin films of SrTiO₃ under compressive/tensile epitaxial strain. Tensile strain produces a substantial increase of the diffusion coefficient, facilitating the mobility of vacancies through the film. Additionally, the effect of tip bias, pulse time, and temperature on the local concentration of vacancies is investigated. These are important parameters of control in the production and stabilization of nonvolatile states in ion-based devices. Our findings show the key role played by strain for the control of oxygen vacancy migration in thin-film oxides.

Designing antiphase boundaries by atomic control of heterointerfaces

Extended defects are known to have critical influences in achieving desired material performance. However, the nature of extended defect generation is highly elusive due to the presence of multiple nucleation mechanisms with close energetics. A strategy to design extended defects in a simple and clean way is thus highly desirable to advance the understanding of their role, improve material quality, and serve as a unique playground to discover new phenomena. In this work, we report an approach to create planar extended defects-antiphase boundaries (APB) -with well-defined origins via the combination of advanced growth, atomic-resolved electron microscopy, first-principals calculations, and defect theory. In La2/3Sr1/3MnO3 thin film grown on Sr2RuO4 substrate, APBs in the film naturally nucleate at the step on the substrate/film interface. For a single step, the generated APBs tend to be nearly perpendicular to the interface and propragate toward the film surface. Interestingly, when two steps are close to each other, two corresponding APBs communicate and merge together, forming a unique triangle-shaped defect domain boundary. Such behavior has been ascribed, in general, to the minimization of the surface energy of the APB. Atomic-resolved electron microscopy shows that these APBs have an intriguing antipolar structure phase, thus having the potential as a general recipe to achieve ferroelectric-like domain walls for high-density nonvolatile memory.

Manipulating Behaviors from Heavy Tungsten Doping on Interband Electronic Transition and Orbital Structure Variation of Vanadium Dioxide Films

Vanadium dioxide (VO₂) with a metal-insulator transition (MIT) has been supposed as a candidate for optoelectronic devices. However, the MIT temperature ( T_MIT) above room temperature limits its application scope. Here, high-quality V_{1- x}W _xO₂ films have been prepared by pulsed laser deposition. On the basis of temperature-dependent transmittance and Raman spectra, it was found that T_MIT increases from 241 to 279 K, when increasing the doping concentration in the range of 0.16 ≤ x ≤ 0.20. The interband electronic transitions and orbital structures of V_{1- x}W _xO₂ films have been investigated via fitting transmittance spectra. Moreover, with the aid of first-principles calculations, an effective orbital theory has been proposed to explain the unique phenomenon. When the W doping concentration increases, the π* and d_II orbitals shift toward the π orbital. Meanwhile, the energy gap between the π* and d_II orbitals decreases at the insulator state. It indicates that the bandwidth is narrowed, which impedes MIT. In addition, the overlap of the π* and d_II orbitals increases at the metal state, and more doping electrons occupy the π* orbital induced by increasing W doping concentration. It manifests that the Mott insulating state becomes more stable, which further improves T_MIT. The present work provides a feasible approach to tune T_MIT via orbital variation and can be helpful in developing the potential VO₂-based optoelectronic devices.

Synthesis of Macroporous Magnetic Fe₃O₄ Microparticles Via a Novel Organic Matter Assisted Open-Cell Hollow Sphere Assembly Method

Macroporous magnetic Fe₃O₄ microparticles, which might act as both drug carriers and magnetocaloric media, were expected to have broad application prospects on magnetocaloric-responsively controlled drug release systems. A kind of macroporous magnetic Fe₃O₄ microparticle was prepared by an organic matter assisted open-cell hollow sphere (hollow sphere with holes on shell) assembly method in this study. 1-vinyl-2-pyrrolidinone (NVP) and 2-acrylamido-2-methyl propane sulfonic acid (AMPS) were selected as the template and the binder, respectively. Ferrous ions were specifically bound to carbonyl groups on NVP and were then reduced by NaBH₄. The reduced irons underwent heterogeneous nucleation and grain growth to form Fe⁰/Fe₃O₄ microspheres consisting of a lot of nano-Fe⁰ grains, and were then assembled into Fe⁰/Fe₃O₄ microparticles wrapped by AMPS. Results indicate that NVP binding with ferrous ions can promote a self-polymerization process and the formation of Fe⁰/Fe₃O₄ microspheres, while AMPS enwrapping around the resultant microspheres can facilitate their assembly into larger aggregates. As a result, macroporous Fe₃O₄ microparticles composed of several open-cell hollow Fe₃O₄ microspheres can be obtained under a Kirkendall-controlled oxidation. Moreover, these as-prepared macroporous Fe₃O₄ microparticles possess a narrow particle size distribution and exhibit ferromagnetism (Ms = 66.14 emu/g, Mr = 6.33 emu/g, and Hc = 105.32 Oe). Our work, described here, would open up a novel synthesis method to assemble macroporous magnetic Fe₃O₄ microparticles for potential application in magnetocaloric-responsively controlled drug release systems.

Physical Properties of (Na1- xK x)NbO3 Thin Film Grown at Low Temperature Using Two-Dimensional Ca2Nb3O10 Nanosheet Seed Layer

A monolayer Ca₂Nb₃O₁₀ (CNO) nanosheet was deposited on a Pt/Ti/SiO₂/Si substrate using the Langmuir-Blodgett method. This monolayer CNO nanosheet with a (001) surface termination was used as a seed layer to reduce the growth temperature of the crystalline (Na_{1- x}K _x)NbO₃ (NKN) film. The crystalline NKN film was preferentially grown along the [001] direction at 400 °C. The ferroelectric and piezoelectric properties of this NKN film were influenced by the postannealing atmosphere due to the variations in the amounts of oxygen vacancies in the NKN film. The crystalline NKN film annealed at 300 °C under 50 Torr O₂ atmosphere showed promising ferroelectric and piezoelectric properties; ε_r of 303 and tan δ of 2.0% at 100 kHz, P_s of 15.3 μC/cm², P_r of 11.7 μC/cm², and E_c of 78 kV/cm, and d₃₃ of 139 pm/V. This NKN film showed the lowest leakage current, which can be explained by the Schottky emission mechanism. The Schottky barrier heights of the Pt/NKN and NKN/CNO/Pt interfaces were calculated to be 0.97 and 0.28 eV, respectively. The results of this work suggest a new method to grow crystalline thin films at low temperatures by using metal-oxide nanosheets as the seed layer.

Single-Crystal Pt-Decorated WO3 Ultrathin Films: A Platform for Sub-ppm Hydrogen Sensing at Room Temperature

Hydrogen-related technologies are rapidly developing, driven by the necessity of efficient and high-density energy storage. This poses new challenges to the detection of dangerous gases, in particular the realization of cheap, sensitive, and fast hydrogen sensors. Several materials are being studied for this application, but most present critical bottlenecks, such as high operational temperature, low sensitivity, slow response time, and/or complex fabrication procedures. Here, we demonstrate that WO₃ in the form of single-crystal, ultrathin films with a Pt catalyst allows high-performance sensing of H₂ gas at room temperature. Thanks to the high electrical resistance in the pristine state, this material is able to detect hydrogen concentrations down to 1 ppm near room temperature. Moreover, the high surface-to-volume ratio of WO₃ ultrathin films determines fast sensor response and recovery, with characteristic times as low as 1 s when the concentration exceeds 100 ppm. By modeling the hydrogen (de)intercalation dynamics with a kinetic model, we extract the energy barriers of the relevant processes and relate the doping mechanism to the formation of oxygen vacancies. Our results reveal the potential of single-crystal WO₃ ultrathin films toward the development of sub-ppm hydrogen detectors working at room temperature.

Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain

Structure determines material's functionality, and strain tunes the structure. Tuning the coherent epitaxial strain by varying the thickness of the films is a precise route to manipulate the functional properties in the low-dimensional oxide materials. Here, to explore the effects of the coherent epitaxial strain on the properties of SrCoO_2.5 thin films, thickness-dependent evolutions of the structural properties and electronic structures were investigated by X-ray diffraction, Raman spectra, optical absorption spectra, scanning transmission electron microscopy (STEM), and first-principles calculations. By increasing the thickness of the SrCoO_2.5 films, the c-axis lattice constant decreases, indicating the relaxation of the coherent epitaxial strain. The energy band gap increases and the Raman spectra undergo a substantial softening with the relaxation of the coherent epitaxial strain. From the STEM results, it can be concluded that the strain causes the variation of the oxygen content in the BM-SCO2.5 films, which results in the variation of band gaps with varying the strain. First-principles calculations show that strain-induced changes in bond lengths and angles of the octahedral CoO₆ and tetrahedral CoO₄ cannot explain the variation band gap. Our findings offer an alternative strategy to manipulate structural and electronic properties by tuning the coherent epitaxial strain in transition-metal oxide thin films.

Tuning electromagnetic properties of SrRuO3 epitaxial thin films via atomic control of cation vacancies

Elemental defect in transition metal oxides is an important and intriguing subject that result in modifications in variety of physical properties including atomic and electronic structure, optical and magnetic properties. Understanding the formation of elemental vacancies and their influence on different physical properties is essential in studying the complex oxide thin films. In this study, we investigated the physical properties of epitaxial SrRuO₃ thin films by systematically manipulating cation and/or oxygen vacancies, via changing the oxygen partial pressure (P(O₂)) during the pulsed laser epitaxy (PLE) growth. Ru vacancies in the low-P(O₂)-grown SrRuO₃ thin films induce lattice expansion with the suppression of the ferromagnetic T_C down to ~120 K. Sr vacancies also disturb the ferromagnetic ordering, even though Sr is not a magnetic element. Our results indicate that both A and B cation vacancies in an ABO₃ perovskite can be systematically engineered via PLE, and the structural, electrical, and magnetic properties can be tailored accordingly.