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Hensling FVE, Dahliah D, Smeaton MA, Shrestha B, Show V, Parzyck CT, Hennighausen C, Kotsonis GN, Rignanese GM, Barone MR, Subedi I, Disa AS, Shen KM, Faeth BD, Bollinger AT, Božović I, Podraza NJ, Kourkoutis LF, Hautier G, Schlom DG. Is Ba 3In 2O 6a high- Tcsuperconductor? J Phys Condens Matter 2024; 36:315602. [PMID: 38657622 DOI: 10.1088/1361-648x/ad42f3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2024] [Accepted: 04/24/2024] [Indexed: 04/26/2024]
Abstract
It has been suggested that Ba3In2O6might be a high-Tcsuperconductor. Experimental investigation of the properties of Ba3In2O6was long inhibited by its instability in air. Recently epitaxial Ba3In2O6with a protective capping layer was demonstrated, which finally allows its electronic characterization. The optical bandgap of Ba3In2O6is determined to be 2.99 eV in-the (001) plane and 2.83 eV along thec-axis direction by spectroscopic ellipsometry. First-principles calculations were carried out, yielding a result in good agreement with the experimental value. Various dopants were explored to induce (super-)conductivity in this otherwise insulating material. NeitherA- norB-site doping proved successful. The underlying reason is predominately the formation of oxygen interstitials as revealed by scanning transmission electron microscopy and first-principles calculations. Additional efforts to induce superconductivity were investigated, including surface alkali doping, optical pumping, and hydrogen reduction. To probe liquid-ion gating, Ba3In2O6was successfully grown epitaxially on an epitaxial SrRuO3bottom electrode. So far none of these efforts induced superconductivity in Ba3In2O6,leaving the answer to the initial question of whether Ba3In2O6is a high-Tcsuperconductor to be 'no' thus far.
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Affiliation(s)
- F V E Hensling
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, United States of America
- Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
| | - D Dahliah
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, 1348 Louvain-la-Neuve, Belgium
- Department of Physics, An-Najah National University, Nablus, Palestine
| | - M A Smeaton
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, United States of America
| | - B Shrestha
- Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606, United States of America
- Wright Center for Photovoltaic Innovation and Commercialization, University of Toledo, Toledo, OH 43606, United States of America
| | - V Show
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, NY 14853, United States of America
| | - C T Parzyck
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, United States of America
| | - C Hennighausen
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, United States of America
| | - G N Kotsonis
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, United States of America
| | - G-M Rignanese
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, 1348 Louvain-la-Neuve, Belgium
| | - M R Barone
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, NY 14853, United States of America
| | - I Subedi
- Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606, United States of America
- Wright Center for Photovoltaic Innovation and Commercialization, University of Toledo, Toledo, OH 43606, United States of America
| | - A S Disa
- School of Applied & Engineering Physics, Cornell University, Ithaca, NY 14853, United States of America
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, United States of America
| | - K M Shen
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, United States of America
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, United States of America
| | - B D Faeth
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, NY 14853, United States of America
| | - A T Bollinger
- Brookhaven National Laboratory, Upton, NY 11973, United States of America
| | - I Božović
- Brookhaven National Laboratory, Upton, NY 11973, United States of America
- Department of Chemistry, Yale University, New Haven, CT 06520, United States of America
- Energy Sciences Institute, Yale University, West Haven, CT 06516, United States of America
| | - N J Podraza
- Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606, United States of America
- Wright Center for Photovoltaic Innovation and Commercialization, University of Toledo, Toledo, OH 43606, United States of America
| | - L F Kourkoutis
- School of Applied & Engineering Physics, Cornell University, Ithaca, NY 14853, United States of America
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, United States of America
| | - G Hautier
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, 1348 Louvain-la-Neuve, Belgium
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, United States of America
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, United States of America
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, United States of America
- Leibniz-Institut für Kristallzüchtung, Max-Born-Strasse 2, 12849 Berlin, Germany
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2
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Parzyck CT, Gupta NK, Wu Y, Anil V, Bhatt L, Bouliane M, Gong R, Gregory BZ, Luo A, Sutarto R, He F, Chuang YD, Zhou T, Herranz G, Kourkoutis LF, Singer A, Schlom DG, Hawthorn DG, Shen KM. Absence of 3a 0 charge density wave order in the infinite-layer nickelate NdNiO 2. Nat Mater 2024; 23:486-491. [PMID: 38278983 PMCID: PMC10990928 DOI: 10.1038/s41563-024-01797-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Accepted: 01/03/2024] [Indexed: 01/28/2024]
Abstract
A hallmark of many unconventional superconductors is the presence of many-body interactions that give rise to broken-symmetry states intertwined with superconductivity. Recent resonant soft X-ray scattering experiments report commensurate 3a0 charge density wave order in infinite-layer nickelates, which has important implications regarding the universal interplay between charge order and superconductivity in both cuprates and nickelates. Here we present X-ray scattering and spectroscopy measurements on a series of NdNiO2+x samples, which reveal that the signatures of charge density wave order are absent in fully reduced, single-phase NdNiO2. The 3a0 superlattice peak instead originates from a partially reduced impurity phase where excess apical oxygens form ordered rows with three-unit-cell periodicity. The absence of any observable charge density wave order in NdNiO2 highlights a crucial difference between the phase diagrams of cuprate and nickelate superconductors.
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Grants
- DE-SC0019414 U.S. Department of Energy (DOE)
- DE-AC02-05CH11231 U.S. Department of Energy (DOE)
- DE-AC02-06CH11357 U.S. Department of Energy (DOE)
- FA9550-21-1-0168 United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
- DMR-2104427 National Science Foundation (NSF)
- NNCI-2025233 National Science Foundation (NSF)
- GBMF3850 Gordon and Betty Moore Foundation (Gordon E. and Betty I. Moore Foundation)
- GBMF9073 Gordon and Betty Moore Foundation (Gordon E. and Betty I. Moore Foundation)
- Part of the research described in this paper was performed at the Canadian Light Source, a national research facility of the University of Saskatchewan, which is supported by the Canada Foundation for Innovation (CFI), the Natural Sciences and Engineering Research Council (NSERC), the National Research Council (NRC), the Canadian Institutes of Health Research (CIHR), the Government of Saskatchewan, and the University of Saskatchewan.
- The microscopy work at Cornell was supported by the NSF PARADIM, with additional support from Cornell University, the Weill Institute, the Kavli Institute at Cornell, and the Packard Foundation.
- G.H. acknowledges support from Severo Ochoa FUNFUTURE (No. CEX2019-000917-S) of the Spanish Ministry of Science and Innovation and by the Generalitat de Catalunya (2021 SGR 00445).
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Affiliation(s)
- C T Parzyck
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY, USA
| | - N K Gupta
- Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, Canada
| | - Y Wu
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY, USA
| | - V Anil
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY, USA
| | - L Bhatt
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - M Bouliane
- Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, Canada
| | - R Gong
- Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, Canada
| | - B Z Gregory
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY, USA
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - A Luo
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - R Sutarto
- Canadian Light Source, Saskatoon, Saskatchewan, Canada
| | - F He
- Canadian Light Source, Saskatoon, Saskatchewan, Canada
| | - Y-D Chuang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - T Zhou
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, USA
| | - G Herranz
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Bellaterra, Spain
| | - L F Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA
| | - A Singer
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA
- Leibniz-Institut für Kristallzüchtung, Berlin, Germany
| | - D G Hawthorn
- Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, Canada
| | - K M Shen
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY, USA.
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Bellaterra, Spain.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA.
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Parzyck CT, Gupta NK, Wu Y, Anil V, Bhatt L, Bouliane M, Gong R, Gregory BZ, Luo A, Sutarto R, He F, Chuang YD, Zhou T, Herranz G, Kourkoutis LF, Singer A, Schlom DG, Hawthorn DG, Shen KM. Publisher Correction: Absence of 3a 0 charge density wave order in the infinite-layer nickelate NdNiO 2. Nat Mater 2024; 23:440. [PMID: 38347120 PMCID: PMC10917676 DOI: 10.1038/s41563-024-01832-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/15/2024]
Affiliation(s)
- C T Parzyck
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY, USA
| | - N K Gupta
- Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, Canada
| | - Y Wu
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY, USA
| | - V Anil
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY, USA
| | - L Bhatt
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - M Bouliane
- Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, Canada
| | - R Gong
- Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, Canada
| | - B Z Gregory
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY, USA
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - A Luo
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - R Sutarto
- Canadian Light Source, Saskatoon, Saskatchewan, Canada
| | - F He
- Canadian Light Source, Saskatoon, Saskatchewan, Canada
| | - Y-D Chuang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - T Zhou
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, USA
| | - G Herranz
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Bellaterra, Spain
| | - L F Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA
| | - A Singer
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA
- Leibniz-Institut für Kristallzüchtung, Berlin, Germany
| | - D G Hawthorn
- Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, Canada
| | - K M Shen
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY, USA.
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Bellaterra, Spain.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA.
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Hepting M, Bejas M, Nag A, Yamase H, Coppola N, Betto D, Falter C, Garcia-Fernandez M, Agrestini S, Zhou KJ, Minola M, Sacco C, Maritato L, Orgiani P, Wei HI, Shen KM, Schlom DG, Galdi A, Greco A, Keimer B. Gapped Collective Charge Excitations and Interlayer Hopping in Cuprate Superconductors. Phys Rev Lett 2022; 129:047001. [PMID: 35938998 DOI: 10.1103/physrevlett.129.047001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2021] [Revised: 03/29/2022] [Accepted: 06/28/2022] [Indexed: 06/15/2023]
Abstract
We use resonant inelastic x-ray scattering to probe the propagation of plasmons in the electron-doped cuprate superconductor Sr_{0.9}La_{0.1}CuO_{2}. We detect a plasmon gap of ∼120 meV at the two-dimensional Brillouin zone center, indicating that low-energy plasmons in Sr_{0.9}La_{0.1}CuO_{2} are not strictly acoustic. The plasmon dispersion, including the gap, is accurately captured by layered t-J-V model calculations. A similar analysis performed on recent resonant inelastic x-ray scattering data from other cuprates suggests that the plasmon gap is generic and its size is related to the magnitude of the interlayer hopping t_{z}. Our work signifies the three dimensionality of the charge dynamics in layered cuprates and provides a new method to determine t_{z}.
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Affiliation(s)
- M Hepting
- Max-Planck-Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
| | - M Bejas
- Facultad de Ciencias Exactas, Ingeniería y Agrimensura and Instituto de Física de Rosario (UNR-CONICET), Avenida Pellegrini 250, 2000 Rosario, Argentina
| | - A Nag
- Diamond Light Source, Harwell Campus, Didcot OX11 0DE, United Kingdom
| | - H Yamase
- International Center of Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0047, Japan
- Department of Condensed Matter Physics, Graduate School of Science, Hokkaido University, Sapporo 060-0810, Japan
| | - N Coppola
- Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano (Salerno), Italy
| | - D Betto
- Max-Planck-Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
| | - C Falter
- Institut für Festkörpertheorie, Westfälische Wilhelms-Universität, Wilhelm-Klemm-Straße 10, 48149 Münster, Germany
| | | | - S Agrestini
- Diamond Light Source, Harwell Campus, Didcot OX11 0DE, United Kingdom
| | - Ke-Jin Zhou
- Diamond Light Source, Harwell Campus, Didcot OX11 0DE, United Kingdom
| | - M Minola
- Max-Planck-Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
| | - C Sacco
- Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano (Salerno), Italy
| | - L Maritato
- Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano (Salerno), Italy
- CNR-SPIN Salerno, Università di Salerno, I-84084 Fisciano (Salerno), Italy
| | - P Orgiani
- CNR-SPIN Salerno, Università di Salerno, I-84084 Fisciano (Salerno), Italy
- CNR-IOM, TASC Laboratory in Area Science Park, 34139 Trieste, Italy
| | - H I Wei
- LASSP, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - K M Shen
- LASSP, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - A Galdi
- Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano (Salerno), Italy
- Cornell Laboratory for Accelerator Based Sciences and Education, Cornell University, Ithaca, New York 14853, USA
| | - A Greco
- Facultad de Ciencias Exactas, Ingeniería y Agrimensura and Instituto de Física de Rosario (UNR-CONICET), Avenida Pellegrini 250, 2000 Rosario, Argentina
| | - B Keimer
- Max-Planck-Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
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5
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Parzyck CT, Galdi A, Nangoi JK, DeBenedetti WJI, Balajka J, Faeth BD, Paik H, Hu C, Arias TA, Hines MA, Schlom DG, Shen KM, Maxson JM. Single-Crystal Alkali Antimonide Photocathodes: High Efficiency in the Ultrathin Limit. Phys Rev Lett 2022; 128:114801. [PMID: 35363005 DOI: 10.1103/physrevlett.128.114801] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2021] [Accepted: 02/02/2022] [Indexed: 06/14/2023]
Abstract
The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this Letter, we demonstrate the synthesis of epitaxial thin films of Cs_{3}Sb on 3C-SiC (001) using molecular-beam epitaxy. Films as thin as 4 nm have quantum efficiencies exceeding 2% at 532 nm. We also find that epitaxial films have an order of magnitude larger quantum efficiency at 650 nm than comparable polycrystalline films on Si. Additionally, these films permit angle-resolved photoemission spectroscopy measurements of the electronic structure, which are found to be in good agreement with theory. Epitaxial films open the door to dramatic brightness enhancements via increased efficiency near threshold, reduced surface disorder, and the possibility of engineering new photoemission functionality at the level of single atomic layers.
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Affiliation(s)
- C T Parzyck
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
| | - A Galdi
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, New York 14853, USA
| | - J K Nangoi
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
| | - W J I DeBenedetti
- Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA
| | - J Balajka
- Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA
| | - B D Faeth
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853, USA
| | - H Paik
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853, USA
| | - C Hu
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
| | - T A Arias
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
| | - M A Hines
- Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, USA
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - K M Shen
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, USA
| | - J M Maxson
- Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, New York 14853, USA
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Meisenheimer PB, Steinhardt RA, Sung SH, Williams LD, Zhuang S, Nowakowski ME, Novakov S, Torunbalci MM, Prasad B, Zollner CJ, Wang Z, Dawley NM, Schubert J, Hunter AH, Manipatruni S, Nikonov DE, Young IA, Chen LQ, Bokor J, Bhave SA, Ramesh R, Hu JM, Kioupakis E, Hovden R, Schlom DG, Heron JT. Engineering new limits to magnetostriction through metastability in iron-gallium alloys. Nat Commun 2021; 12:2757. [PMID: 33980848 PMCID: PMC8115637 DOI: 10.1038/s41467-021-22793-x] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/21/2020] [Accepted: 03/30/2021] [Indexed: 11/09/2022] Open
Abstract
Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe1-xGax alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe1-xGax alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe1-xGax - [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10-5 s m-1. When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.
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Affiliation(s)
- P B Meisenheimer
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - R A Steinhardt
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - S H Sung
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - L D Williams
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY, USA
| | - S Zhuang
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - M E Nowakowski
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - S Novakov
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - M M Torunbalci
- OxideMEMS Lab, Purdue University, West Lafayette, IN, USA
| | - B Prasad
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - C J Zollner
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Z Wang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - N M Dawley
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - J Schubert
- Peter Grünberg Institute (PGI-9) and JARA Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, Jülich, Germany
| | - A H Hunter
- Michigan Center for Materials Characterization, University of Michigan, Ann Arbor, MI, USA
| | - S Manipatruni
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - D E Nikonov
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - I A Young
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - L Q Chen
- Department of Materials Science and Engineering, Penn State University, State College, PA, USA
| | - J Bokor
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - S A Bhave
- OxideMEMS Lab, Purdue University, West Lafayette, IN, USA
| | - R Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, CA, USA.,Department of Physics, University of California, Berkeley, CA, USA
| | - J-M Hu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - E Kioupakis
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - R Hovden
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.,Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.,Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, Berlin, Germany
| | - J T Heron
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
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7
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Ruf JP, Paik H, Schreiber NJ, Nair HP, Miao L, Kawasaki JK, Nelson JN, Faeth BD, Lee Y, Goodge BH, Pamuk B, Fennie CJ, Kourkoutis LF, Schlom DG, Shen KM. Strain-stabilized superconductivity. Nat Commun 2021; 12:59. [PMID: 33397949 PMCID: PMC7782483 DOI: 10.1038/s41467-020-20252-7] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2020] [Accepted: 11/19/2020] [Indexed: 11/09/2022] Open
Abstract
Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO2 thin films on (110)-oriented TiO2 substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of d orbitals.
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Affiliation(s)
- J P Ruf
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, 14853, USA.
| | - H Paik
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials, Cornell University, Ithaca, NY, 14853, USA.,Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - N J Schreiber
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - H P Nair
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - L Miao
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, 14853, USA
| | - J K Kawasaki
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, 14853, USA.,Department of Materials Science and Engineering, University of Wisconsin, Madison, WI, 53706, USA
| | - J N Nelson
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, 14853, USA
| | - B D Faeth
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, 14853, USA.,Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials, Cornell University, Ithaca, NY, 14853, USA
| | - Y Lee
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, 14853, USA
| | - B H Goodge
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA.,Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA
| | - B Pamuk
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
| | - C J Fennie
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
| | - L F Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA.,Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA.,Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA.,Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, Berlin, 12489, Germany
| | - K M Shen
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, 14853, USA. .,Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA.
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8
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Wang Y, Bossé G, Nair HP, Schreiber NJ, Ruf JP, Cheng B, Adamo C, Shai DE, Lubashevsky Y, Schlom DG, Shen KM, Armitage NP. Subterahertz Momentum Drag and Violation of Matthiessen's Rule in an Ultraclean Ferromagnetic SrRuO_{3} Metallic Thin Film. Phys Rev Lett 2020; 125:217401. [PMID: 33274990 DOI: 10.1103/physrevlett.125.217401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2020] [Revised: 08/14/2020] [Accepted: 10/09/2020] [Indexed: 06/12/2023]
Abstract
SrRuO_{3}, a ferromagnet with an approximately 160 K Curie temperature, exhibits a T^{2}-dependent dc resistivity below ≈30 K. Nevertheless, previous optical studies in the infrared and terahertz range show non-Drude dynamics at low temperatures, which seem to contradict Fermi-liquid predictions. In this work, we measure the low-frequency THz range response of thin films with residual resistivity ratios, ρ_{300K}/ρ_{4K}≈74. At temperatures below 30 K, we find both a sharp zero frequency mode which has a width narrower than k_{B}T/ℏ as well as a broader zero frequency Lorentzian that has at least an order of magnitude larger scattering. Both features have temperature dependences consistent with a Fermi liquid with the wider feature explicitly showing a T^{2} scaling. Above 30 K, there is a crossover to a regime described by a single Drude peak that we believe arises from strong interband electron-electron scattering. Such two channel Drude transport sheds light on reports of the violation of Matthiessen's rule and extreme sensitivity to disorder in metallic ruthenates.
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Affiliation(s)
- Youcheng Wang
- The Institute for Quantum Matter, Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - G Bossé
- The Institute for Quantum Matter, Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
- Physics Department, University of North Florida, Jacksonville, Florida 32224-7699, USA
| | - H P Nair
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - N J Schreiber
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - J P Ruf
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - B Cheng
- The Institute for Quantum Matter, Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - C Adamo
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - D E Shai
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - Y Lubashevsky
- The Institute for Quantum Matter, Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - K M Shen
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - N P Armitage
- The Institute for Quantum Matter, Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
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9
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Nelson JN, Parzyck CT, Faeth BD, Kawasaki JK, Schlom DG, Shen KM. Mott gap collapse in lightly hole-doped Sr 2-xK xIrO 4. Nat Commun 2020; 11:2597. [PMID: 32444617 PMCID: PMC7244596 DOI: 10.1038/s41467-020-16425-z] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2019] [Accepted: 04/23/2020] [Indexed: 11/09/2022] Open
Abstract
The evolution of Sr2IrO4 upon carrier doping has been a subject of intense interest, due to its similarities to the parent cuprates, yet the intrinsic behaviour of Sr2IrO4 upon hole doping remains enigmatic. Here, we synthesize and investigate hole-doped Sr2-xKxIrO4 utilizing a combination of reactive oxide molecular-beam epitaxy, substitutional diffusion and in-situ angle-resolved photoemission spectroscopy. Upon hole doping, we observe the formation of a coherent, two-band Fermi surface, consisting of both hole pockets centred at (π, 0) and electron pockets centred at (π/2, π/2). In particular, the strong similarities between the Fermi surface topology and quasiparticle band structure of hole- and electron-doped Sr2IrO4 are striking given the different internal structure of doped electrons versus holes.
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Affiliation(s)
- J N Nelson
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York, 14853, USA
| | - C T Parzyck
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York, 14853, USA
| | - B D Faeth
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York, 14853, USA
| | - J K Kawasaki
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York, 14853, USA.,Department of Materials Science and Engineering, Cornell University, Ithaca, New York, 14853, USA.,Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York, 14853, USA.,Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin, 53706, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York, 14853, USA.,Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York, 14853, USA
| | - K M Shen
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York, 14853, USA. .,Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York, 14853, USA.
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10
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Irwin J, Lindemann S, Maeng W, Wang JJ, Vaithyanathan V, Hu JM, Chen LQ, Schlom DG, Eom CB, Rzchowski MS. Magnetoelectric Coupling by Piezoelectric Tensor Design. Sci Rep 2019; 9:19158. [PMID: 31844071 PMCID: PMC6914799 DOI: 10.1038/s41598-019-55139-1] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2019] [Accepted: 11/05/2019] [Indexed: 11/24/2022] Open
Abstract
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric/ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain manipulates the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the large reduction of in-plane piezoelectric strain by substrate clamping, and in two-terminal devices, the requirement of anisotropic in-plane strain. Here we show that these limitations can be overcome by designing the piezoelectric strain tensor using the boundary interaction between biased and unbiased piezoelectric. We fabricated 500 nm thick, (001) oriented [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting electric field-driven Ni magnetization rotation. We develop a method that can apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.
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Affiliation(s)
- J Irwin
- Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - S Lindemann
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - W Maeng
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - J J Wang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, United States
| | - V Vaithyanathan
- Department of Material Science and Engineering, Cornell University, Ithaca, New York, 14853, United States
| | - J M Hu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - L Q Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, United States
| | - D G Schlom
- Department of Material Science and Engineering, Cornell University, Ithaca, New York, 14853, United States.,Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York, 14853, United States
| | - C B Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - M S Rzchowski
- Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States.
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11
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Sacco C, Galdi A, Orgiani P, Coppola N, Wei HI, Arpaia R, Charpentier S, Lombardi F, Goodge B, Kourkoutis LF, Shen K, Schlom DG, Maritato L. Low temperature hidden Fermi-liquid charge transport in under doped La x Sr 1-x CuO 2 infinite layer electron-doped thin films. J Phys Condens Matter 2019; 31:445601. [PMID: 31295728 DOI: 10.1088/1361-648x/ab3132] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We have studied the low temperature electrical transport properties of La x Sr1-x CuO2 thin films grown by oxide molecular beam epitaxy on (1 1 0) GdScO3 and TbScO3 substrates. The transmission electron microscopy measurements and the x-ray diffraction analysis confirmed the epitaxy of the obtained films and the study of their normal state transport properties, removing the ambiguity regarding the truly conducting layer, allowed to highlight the presence of a robust hidden Fermi liquid charge transport in the low temperature properties of infinite layer electron doped cuprate superconductors. These results are in agreement with recent observations performed in other p and n doped cuprate materials and point toward a general description of the superconducting and normal state properties in these compounds.
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Affiliation(s)
- C Sacco
- Department of Industrial Engineering, University of Salerno, Fisciano (SA), Italy. CNR-SPIN, UOS Salerno, Fisciano (SA), Italy
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12
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Mundy JA, Schaab J, Kumagai Y, Cano A, Stengel M, Krug IP, Gottlob DM, Dog Anay H, Holtz ME, Held R, Yan Z, Bourret E, Schneider CM, Schlom DG, Muller DA, Ramesh R, Spaldin NA, Meier D. Functional electronic inversion layers at ferroelectric domain walls. Nat Mater 2017; 16:622-627. [PMID: 28319611 DOI: 10.1038/nmat4878] [Citation(s) in RCA: 45] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2016] [Accepted: 02/06/2017] [Indexed: 06/06/2023]
Abstract
Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO3. We relate the transition to the formation-and eventual activation-of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry.
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Affiliation(s)
- J A Mundy
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - J Schaab
- Department of Materials, ETH Zurich, 8093 Zürich, Switzerland
| | - Y Kumagai
- Department of Materials, ETH Zurich, 8093 Zürich, Switzerland
| | - A Cano
- CNRS, Université de Bordeaux, ICMCB, UPR 9048, 33600 Pessac, France
| | - M Stengel
- ICREA-Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - I P Krug
- Institut für Optik und Atomare Physik, TU Berlin, 10623 Berlin, Germany
| | - D M Gottlob
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - H Dog Anay
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - M E Holtz
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - R Held
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - Z Yan
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Department of Physics, ETH Zurich, Otto-Stern-Weg 1, 8093 Zürich, Switzerland
| | - E Bourret
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - C M Schneider
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - D A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - R Ramesh
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Department of Materials Science and Engineering and Department of Physics, UC Berkeley, Berkeley, California 94720, USA
| | - N A Spaldin
- Department of Materials, ETH Zurich, 8093 Zürich, Switzerland
| | - D Meier
- Department of Materials, ETH Zurich, 8093 Zürich, Switzerland
- Department of Materials Science and Engineering, Norwegian University of Science and Technology, 7491 Trondheim, Norway
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13
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Laguta VV, Kamba S, Maryško M, Andrzejewski B, Kachlík M, Maca K, Lee JH, Schlom DG. Magnetic resonance study of bulk and thin film EuTiO 3. J Phys Condens Matter 2017; 29:105401. [PMID: 28075333 DOI: 10.1088/1361-648x/aa58c6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Magnetic resonance spectra of EuTiO3 in both bulk and thin film form were taken at temperatures from 3-350 K and microwave frequencies from 9.2-9.8 and 34 GHz. In the paramagnetic phase, magnetic resonance spectra are determined by magnetic dipole and exchange interactions between Eu2+ spins. In the film, a large contribution arises from the demagnetization field. From detailed analysis of the linewidth and its temperature dependence, the parameters of spin-spin interactions were determined: the exchange frequency is 10.5 GHz and the estimated critical exponent of the spin correlation length is ≈0.4. In the bulk samples, the spectra exhibited a distinct minimum in the linewidth at the Néel temperature, T N ≈ 5.5 K, while the resonance field practically does not change even on cooling below T N. This is indicative of a small magnetic anisotropy ~320 G in the antiferromagnetic phase. In the film, the magnetic resonance spectrum is split below T N into several components due to excitation of the magnetostatic modes, corresponding to a non-uniform precession of magnetization. Moreover, the film was observed to degrade over two years. This was manifested by an increase of defects and a change in the domain structure. The saturated magnetization in the film, estimated from the magnetic resonance spectrum, was about 900 emu cm-3 or 5.5 µ B/unit cell at T = 3.5 K.
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Affiliation(s)
- V V Laguta
- Institute of Physics ASCR, Na Slovance 2, 18221 Prague 8, Czechia. Institute of Physics, Opole University, Oleska 48, 45-052 Opole, Poland
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14
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Klimm D, Guguschev C, Kok DJ, Naumann M, Ackermann L, Rytz D, Peltz M, Dupré K, Neumann MD, Kwasniewski A, Schlom DG, Bickermann M. Crystal growth and characterization of the pyrochlore Tb 2Ti 2O 7. CrystEngComm 2017. [DOI: 10.1039/c7ce00942a] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Terbium titanate (Tb2Ti2O7) is a spin-ice material with remarkable magneto-optical properties.
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Affiliation(s)
- D. Klimm
- Leibniz-Institut für Kristallzüchtung
- 12489 Berlin
- Germany
| | - C. Guguschev
- Leibniz-Institut für Kristallzüchtung
- 12489 Berlin
- Germany
| | - D. J. Kok
- Leibniz-Institut für Kristallzüchtung
- 12489 Berlin
- Germany
| | - M. Naumann
- Leibniz-Institut für Kristallzüchtung
- 12489 Berlin
- Germany
| | - L. Ackermann
- Forschungsinstitut für mineralische und metallische Werkstoffe – Edelsteine/Edelmetalle – GmbH (FEE)
- 55743 Idar-Oberstein
- Germany
| | - D. Rytz
- Forschungsinstitut für mineralische und metallische Werkstoffe – Edelsteine/Edelmetalle – GmbH (FEE)
- 55743 Idar-Oberstein
- Germany
| | - M. Peltz
- Forschungsinstitut für mineralische und metallische Werkstoffe – Edelsteine/Edelmetalle – GmbH (FEE)
- 55743 Idar-Oberstein
- Germany
| | - K. Dupré
- Forschungsinstitut für mineralische und metallische Werkstoffe – Edelsteine/Edelmetalle – GmbH (FEE)
- 55743 Idar-Oberstein
- Germany
| | - M. D. Neumann
- Leibniz-Institut für Analytische Wissenschaften
- 12489 Berlin
- Germany
| | - A. Kwasniewski
- Leibniz-Institut für Kristallzüchtung
- 12489 Berlin
- Germany
| | - D. G. Schlom
- Department of Materials Science and Engineering
- Cornell University
- Ithaca
- USA
- Kavli Institute at Cornell for Nanoscale Science
| | - M. Bickermann
- Leibniz-Institut für Kristallzüchtung
- 12489 Berlin
- Germany
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15
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Burganov B, Adamo C, Mulder A, Uchida M, King PDC, Harter JW, Shai DE, Gibbs AS, Mackenzie AP, Uecker R, Bruetzam M, Beasley MR, Fennie CJ, Schlom DG, Shen KM. Strain Control of Fermiology and Many-Body Interactions in Two-Dimensional Ruthenates. Phys Rev Lett 2016; 116:197003. [PMID: 27232037 DOI: 10.1103/physrevlett.116.197003] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2016] [Indexed: 06/05/2023]
Abstract
Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr_{2}RuO_{4} and its isoelectronic counterpart Ba_{2}RuO_{4} using oxide molecular beam epitaxy, in situ angle-resolved photoemission spectroscopy, and transport measurements. Near the topological transition of the γ Fermi surface sheet, we observe clear signatures of critical fluctuations, while the quasiparticle mass enhancement is found to increase rapidly and monotonically with increasing Ru-O bond distance. Our work demonstrates the possibilities for using epitaxial strain as a disorder-free means of manipulating emergent properties, many-body interactions, and potentially the superconductivity in correlated materials.
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Affiliation(s)
- B Burganov
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - C Adamo
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
- Department of Applied Physics, Stanford University, Stanford, California 94305, USA
| | - A Mulder
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - M Uchida
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - P D C King
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
- School of Physics and Astronomy, University of St Andrews, St Andrews, Fife KY16 9SS, United Kingdom
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - J W Harter
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - D E Shai
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - A S Gibbs
- Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
| | - A P Mackenzie
- School of Physics and Astronomy, University of St Andrews, St Andrews, Fife KY16 9SS, United Kingdom
- Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany
| | - R Uecker
- Leibniz Institute for Crystal Growth, D-12489 Berlin, Germany
| | - M Bruetzam
- Leibniz Institute for Crystal Growth, D-12489 Berlin, Germany
| | - M R Beasley
- Department of Applied Physics, Stanford University, Stanford, California 94305, USA
| | - C J Fennie
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - K M Shen
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
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16
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Lebens-Higgins Z, Scanlon DO, Paik H, Sallis S, Nie Y, Uchida M, Quackenbush NF, Wahila MJ, Sterbinsky GE, Arena DA, Woicik JC, Schlom DG, Piper LFJ. Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide. Phys Rev Lett 2016; 116:027602. [PMID: 26824566 DOI: 10.1103/physrevlett.116.027602] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2015] [Indexed: 05/28/2023]
Abstract
We have directly measured the band gap renormalization associated with the Moss-Burstein shift in the perovskite transparent conducting oxide (TCO), La-doped BaSnO_{3}, using hard x-ray photoelectron spectroscopy. We determine that the band gap renormalization is almost entirely associated with the evolution of the conduction band. Our experimental results are supported by hybrid density functional theory supercell calculations. We determine that unlike conventional TCOs where interactions with the dopant orbitals are important, the band gap renormalization in La-BaSnO_{3} is driven purely by electrostatic interactions.
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Affiliation(s)
- Z Lebens-Higgins
- Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA
| | - D O Scanlon
- Kathleen Lonsdale Materials Chemistry, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
| | - H Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - S Sallis
- Materials science and Engineering, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA
| | - Y Nie
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA‡
| | - M Uchida
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA‡
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan
| | - N F Quackenbush
- Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA
| | - M J Wahila
- Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA
| | - G E Sterbinsky
- National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973, USA§
| | - Dario A Arena
- National Synchrotron Light Source-II, Basic Energy Sciences Directorate, Brookhaven National Laboratory, Upton, New York 11973, USA¶
| | - J C Woicik
- Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
| | - L F J Piper
- Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA
- Materials science and Engineering, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA
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17
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Nie YF, Di Sante D, Chatterjee S, King PDC, Uchida M, Ciuchi S, Schlom DG, Shen KM. Formation and Observation of a Quasi-Two-Dimensional dxy Electron Liquid in Epitaxially Stabilized Sr(2-x)La(x)TiO4 Thin Films. Phys Rev Lett 2015; 115:096405. [PMID: 26371669 DOI: 10.1103/physrevlett.115.096405] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2014] [Indexed: 06/05/2023]
Abstract
We report the formation and observation of an electron liquid in Sr(2-x)La(x)TiO4, the quasi-two-dimensional counterpart of SrTiO3, through reactive molecular-beam epitaxy and in situ angle-resolved photoemission spectroscopy. The lowest lying states are found to be comprised of Ti 3d_{xy} orbitals, analogous to the LaAlO3/SrTiO3 interface and exhibit unusually broad features characterized by quantized energy levels and a reduced Luttinger volume. Using model calculations, we explain these characteristics through an interplay of disorder and electron-phonon coupling acting cooperatively at similar energy scales, which provides a possible mechanism for explaining the low free carrier concentrations observed at various oxide heterostructures such as the LaAlO3/SrTiO3 interface.
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Affiliation(s)
- Y F Nie
- National Laboratory of Solid State Microstructures and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - D Di Sante
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, Coppito, L'Aquila I-67100, Italy
- CNR-SPIN, Via Vetoio, L'Aquila I-67100, Italy
| | - S Chatterjee
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - P D C King
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - M Uchida
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - S Ciuchi
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, Coppito, L'Aquila I-67100, Italy
- CNR-ISC, Via dei Taurini, Rome I-00185, Italy
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - K M Shen
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
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18
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Nie YF, King PDC, Kim CH, Uchida M, Wei HI, Faeth BD, Ruf JP, Ruff JPC, Xie L, Pan X, Fennie CJ, Schlom DG, Shen KM. Interplay of spin-orbit interactions, dimensionality, and octahedral rotations in semimetallic SrIrO(3). Phys Rev Lett 2015; 114:016401. [PMID: 25615483 DOI: 10.1103/physrevlett.114.016401] [Citation(s) in RCA: 59] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2014] [Indexed: 06/04/2023]
Abstract
We employ reactive molecular-beam epitaxy to synthesize the metastable perovskite SrIrO(3) and utilize in situ angle-resolved photoemission to reveal its electronic structure as an exotic narrow-band semimetal. We discover remarkably narrow bands which originate from a confluence of strong spin-orbit interactions, dimensionality, and both in- and out-of-plane IrO(6) octahedral rotations. The partial occupation of numerous bands with strongly mixed orbital characters signals the breakdown of the single-band Mott picture that characterizes its insulating two-dimensional counterpart, Sr(2)IrO(4), illustrating the power of structure-property relations for manipulating the subtle balance between spin-orbit interactions and electron-electron interactions.
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Affiliation(s)
- Y F Nie
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA and Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA and National Laboratory of Solid State Microstructures and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
| | - P D C King
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - C H Kim
- Department of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - M Uchida
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
| | - H I Wei
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
| | - B D Faeth
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
| | - J P Ruf
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
| | - J P C Ruff
- CHESS, Cornell University, Ithaca, New York 14853, USA
| | - L Xie
- National Laboratory of Solid State Microstructures and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China and Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - X Pan
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - C J Fennie
- Department of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - D G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - K M Shen
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
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19
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Lee Y, Liu ZQ, Heron JT, Clarkson JD, Hong J, Ko C, Biegalski MD, Aschauer U, Hsu SL, Nowakowski ME, Wu J, Christen HM, Salahuddin S, Bokor JB, Spaldin NA, Schlom DG, Ramesh R. Large resistivity modulation in mixed-phase metallic systems. Nat Commun 2015; 6:5959. [DOI: 10.1038/ncomms6959] [Citation(s) in RCA: 145] [Impact Index Per Article: 16.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2014] [Accepted: 11/26/2014] [Indexed: 11/09/2022] Open
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20
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Nie YF, Zhu Y, Lee CH, Kourkoutis LF, Mundy JA, Junquera J, Ghosez P, Baek DJ, Sung S, Xi XX, Shen KM, Muller DA, Schlom DG. Atomically precise interfaces from non-stoichiometric deposition. Nat Commun 2014; 5:4530. [DOI: 10.1038/ncomms5530] [Citation(s) in RCA: 85] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2014] [Accepted: 06/27/2014] [Indexed: 11/09/2022] Open
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21
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King PDC, Wei HI, Nie YF, Uchida M, Adamo C, Zhu S, He X, Božović I, Schlom DG, Shen KM. Atomic-scale control of competing electronic phases in ultrathin LaNiO₃. Nat Nanotechnol 2014; 9:443-7. [PMID: 24705511 DOI: 10.1038/nnano.2014.59] [Citation(s) in RCA: 64] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2013] [Accepted: 02/21/2014] [Indexed: 05/27/2023]
Abstract
In an effort to scale down electronic devices to atomic dimensions, the use of transition-metal oxides may provide advantages over conventional semiconductors. Their high carrier densities and short electronic length scales are desirable for miniaturization, while strong interactions that mediate exotic phase diagrams open new avenues for engineering emergent properties. Nevertheless, understanding how their correlated electronic states can be manipulated at the nanoscale remains challenging. Here, we use angle-resolved photoemission spectroscopy to uncover an abrupt destruction of Fermi liquid-like quasiparticles in the correlated metal LaNiO₃ when confined to a critical film thickness of two unit cells. This is accompanied by the onset of an insulating phase as measured by electrical transport. We show how this is driven by an instability to an incipient order of the underlying quantum many-body system, demonstrating the power of artificial confinement to harness control over competing phases in complex oxides with atomic-scale precision.
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Affiliation(s)
- P D C King
- 1] Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA [2] Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - H I Wei
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - Y F Nie
- 1] Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA [2] Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - M Uchida
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
| | - C Adamo
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - S Zhu
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - X He
- Brookhaven National Laboratory, Upton, New York 11973-5000, USA
| | - I Božović
- Brookhaven National Laboratory, Upton, New York 11973-5000, USA
| | - D G Schlom
- 1] Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA [2] Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - K M Shen
- 1] Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA [2] Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
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22
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Quackenbush NF, Tashman JW, Mundy JA, Sallis S, Paik H, Misra R, Moyer JA, Guo JH, Fischer DA, Woicik JC, Muller DA, Schlom DG, Piper LFJ. Nature of the metal insulator transition in ultrathin epitaxial vanadium dioxide. Nano Lett 2013; 13:4857-4861. [PMID: 24000961 DOI: 10.1021/nl402716d] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
We have combined hard X-ray photoelectron spectroscopy with angular dependent O K-edge and V L-edge X-ray absorption spectroscopy to study the electronic structure of metallic and insulating end point phases in 4.1 nm thick (14 units cells along the c-axis of VO2) films on TiO2(001) substrates, each displaying an abrupt MIT centered at ~300 K with width <20 K and a resistance change of ΔR/R > 10(3). The dimensions, quality of the films, and stoichiometry were confirmed by a combination of scanning transmission electron microscopy with electron energy loss spectroscopy, X-ray spectroscopy, and resistivity measurements. The measured end point phases agree with their bulk counterparts. This clearly shows that, apart from the strain induced change in transition temperature, the underlying mechanism of the MIT for technologically relevant dimensions must be the same as the bulk for this orientation.
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Affiliation(s)
- N F Quackenbush
- Department of Physics, Applied Physics and Astronomy, Binghamton University , Binghamton, New York 13902, United States
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23
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Shai DE, Adamo C, Shen DW, Brooks CM, Harter JW, Monkman EJ, Burganov B, Schlom DG, Shen KM. Quasiparticle mass enhancement and temperature dependence of the electronic structure of ferromagnetic SrRuO3 thin films. Phys Rev Lett 2013; 110:087004. [PMID: 23473191 DOI: 10.1103/physrevlett.110.087004] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2012] [Indexed: 06/01/2023]
Abstract
We report high-resolution angle-resolved photoemission studies of epitaxial thin films of the correlated 4d transition metal oxide ferromagnet SrRuO(3). The Fermi surface in the ferromagnetic state consists of well-defined Landau quasiparticles exhibiting strong coupling to low-energy bosonic modes which contributes to the large effective masses observed by transport and thermodynamic measurements. Upon warming the material through its Curie temperature, we observe a substantial decrease in quasiparticle coherence but negligible changes in the ferromagnetic exchange splitting, suggesting that local moments play an important role in the ferromagnetism in SrRuO(3).
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Affiliation(s)
- D E Shai
- Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
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24
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Yang JC, He Q, Suresha SJ, Kuo CY, Peng CY, Haislmaier RC, Motyka MA, Sheng G, Adamo C, Lin HJ, Hu Z, Chang L, Tjeng LH, Arenholz E, Podraza NJ, Bernhagen M, Uecker R, Schlom DG, Gopalan V, Chen LQ, Chen CT, Ramesh R, Chu YH. Orthorhombic BiFeO3. Phys Rev Lett 2012; 109:247606. [PMID: 23368382 DOI: 10.1103/physrevlett.109.247606] [Citation(s) in RCA: 19] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2012] [Revised: 09/07/2012] [Indexed: 05/12/2023]
Abstract
A new orthorhombic phase of the multiferroic BiFeO3 has been created via strain engineering by growing it on a NdScO(3)(110)(o) substrate. The tensile-strained orthorhombic BiFeO3 phase is ferroelectric and antiferromagnetic at room temperature. A combination of nonlinear optical second harmonic generation and piezoresponse force microscopy revealed that the ferroelectric polarization in the orthorhombic phase is along the in-plane {110}(pc) directions. In addition, the corresponding rotation of the antiferromagnetic axis in this new phase was observed using x-ray linear dichroism.
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Affiliation(s)
- J C Yang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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25
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Shai DE, Melville AJ, Harter JW, Monkman EJ, Shen DW, Schmehl A, Schlom DG, Shen KM. Temperature dependence of the electronic structure and Fermi-surface reconstruction of Eu(1-x)Gd(x)O through the ferromagnetic metal-insulator transition. Phys Rev Lett 2012; 108:267003. [PMID: 23005009 DOI: 10.1103/physrevlett.108.267003] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2011] [Indexed: 06/01/2023]
Abstract
We present angle-resolved photoemission spectroscopy of Eu(1-x)Gd(x)O through the ferromagnetic metal-insulator transition. In the ferromagnetic phase, we observe Fermi surface pockets at the Brillouin zone boundary, consistent with density functional theory, which predicts a half-metal. Upon warming into the paramagnetic state, our results reveal a strong momentum-dependent evolution of the electronic structure, where the metallic states at the zone boundary are replaced by pseudogapped states at the Brillouin zone center due to the absence of magnetic long-range order of the Eu 4f moments.
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Affiliation(s)
- D E Shai
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
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26
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Baek SH, Park J, Kim DM, Aksyuk VA, Das RR, Bu SD, Felker DA, Lettieri J, Vaithyanathan V, Bharadwaja SSN, Bassiri-Gharb N, Chen YB, Sun HP, Folkman CM, Jang HW, Kreft DJ, Streiffer SK, Ramesh R, Pan XQ, Trolier-McKinstry S, Schlom DG, Rzchowski MS, Blick RH, Eom CB. Giant piezoelectricity on Si for hyperactive MEMS. Science 2011; 334:958-61. [PMID: 22096193 DOI: 10.1126/science.1207186] [Citation(s) in RCA: 341] [Impact Index Per Article: 26.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO(3) template layer with superior piezoelectric coefficients (e(31,f) = -27 ± 3 coulombs per square meter) and figures of merit for piezoelectric energy-harvesting systems. We have incorporated these heterostructures into microcantilevers that are actuated with extremely low drive voltage due to thin-film piezoelectric properties that rival bulk PMN-PT single crystals. These epitaxial heterostructures exhibit very large electromechanical coupling for ultrasound medical imaging, microfluidic control, mechanical sensing, and energy harvesting.
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Affiliation(s)
- S H Baek
- Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706, USA
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27
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Nelson CT, Gao P, Jokisaari JR, Heikes C, Adamo C, Melville A, Baek SH, Folkman CM, Winchester B, Gu Y, Liu Y, Zhang K, Wang E, Li J, Chen LQ, Eom CB, Schlom DG, Pan X. Domain Dynamics During Ferroelectric Switching. Science 2011; 334:968-71. [DOI: 10.1126/science.1206980] [Citation(s) in RCA: 288] [Impact Index Per Article: 22.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
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Abstract
AbstractA manmade ferroelectric-paraelectric heterostructure, a BaTiO3 / SrTiO3 superlattice, was studied to explore the effect of strain on ferroelectricity. An atomically abrupt BaTiO3 / SrTiO3 superlattice was grown on a (001) SrTiO3 substrate by reactive molecular beam epitaxy. Both BaTiO3 and SrTiO3 layers were grown with their individual thicknesses less than the critical thickness for the formation of interfacial misfit dislocations, leaving the entire superlattice fully coherent with the substrate. This resulted in a uniformly and highly strained BaTiO3 layer to study the effect of strain on ferroelectricity. Quantitative high-resolution transmission electron microscopy was employed to examine the atomic positions of cations and anions in the strained BaTiO3 layers. It was found that the relative static displacement of cations (Ti4+, Ba2+) to anions (O2−) is larger than that of bulk BaTiO3. Our observation thus illustrates the strain-induced elevation of spontaneous polarization in BaTiO3 thin films.
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Abstract
ABSTRACTA perplexing issue in the growth of epitaxial oxide films on (100) silicon is the observed (110) orientation of yttria (Y2O3) and ceria (CeO2) despite the (100) orientation having a lower lattice mismatch. As expected, yttria-stabilized zirconia (YSZ) grows with the (100) orientation, yet it has a worse lattice match than both Y2O3(100) and CeO2(100) with silicon (100). The orientations observed would be expected if an epitaxial metal suicide layer forms initially during growth, before the oxidizing ambient is introduced. Calculation of the ensuing lattice mismatch between the oxide and suicide layer and multiplicity (σoxide) of the near coincident-site lattice for the oxide lattice shows that the (110) orientation is better lattice-matched than the (100) orientation for both Y2O3 (+2.3% × -2.4%, σoxide= 2, vs. -2.4% × +3.5%, σoxide = 4) and CeO2 (+1.8% × -4.0%, σoxide = 5, vs. 1.9% × 1.9%, σoxide= 5) and that for YSZ, (100) is better lattice matched than (110) (-0.8% × -1.6%, σoxide = 1, vs. -1.1 % × +4.8%, σoxide = 3). In each case, the in-plane orientation yielding the lowest mismatch with the suicide layer is consistent with the in-plane orientation observed between the oxide film and silicon substrate. Furthermore, the commonly observed rotational twinning in the oxide film can be accounted for by the expected orthogonal domain multipositioning in both the suicide and oxide layers. In CeO2, multipositioning allows two equally matched sets of orthogonal domains. One set consists of the two experimentally observed orientations (related by a 90° rotation). The other set is rotated 37° from the commonly observed orientations. Only the set with orientations aligned to the surface steps of Si(100) is observed, indicating the likely influence of graphoepitaxy in selecting between the two degenerate sets of orientations. When grown on Pt(100), Y2O3 grows with predominantly the (100) orientation and no (110) orientation, suggesting that without suicide formation, Y2O3 will grow with the expected well matched (100) orientation even when polar interfaces are involved.
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Abstract
ABSTRACTHigh K (dielectric constant) and silicon-compatibility are essential for an alternative gate dielectric for use in silicon MOSFETs. Thermodynamic data were used to comprehensively evaluate the thermodynamic stability of binary oxides and binary nitrides in contact with silicon at 1000 K. Using the Clausius-Mossotti equation and ionic polarizabilities, the K of all known inorganic compounds composed of Si-compatible binary oxides was estimated. A ranked list of alternate gate oxide candidates that are likely to possess both high K and silicon-compatibility is given.
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Trolier-Mckinstry S, Randall CA, Maria JP, Theis C, Schlom DG, Shepard J, Yamakawa K. Size Effects and Domains in Ferroelectric Thin Film Actuators. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-433-363] [Citation(s) in RCA: 35] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractFerroelectric thin films typically differ from bulk ceramics in terms of both the average grain size and the degree of stress imposed on the film by the substrate. Studies on bulk ceramics have demonstrated that the number of domain variants within grains depends on the grain size for sizes <˜lμm. This can diminish the poling efficiency of the material. Since most thin films show primary grain sizes well below a micron, similar effects should be observed in films. In addition, since the perovskite ferroelectrics contain ferroelastic as well as ferroelectric domains, it seems clear that stress in thin films may markedly alter the degree to which domain walls contribute to the observed properties. In this paper, the relative importance of these factors are discussed for several types of ferroelectric thin films. Films have been prepared by pulsed laser deposition, magnetron sputtering, and by sol-gel processing. It has been found that epitaxial BaTiO3 films are ferroelectric at 77K down to thicknesses as low as ˜ 60nm. Data on the low and high field electrical properties are reported as a function of temperature, the film crystallinity, and film thickness for representative perovskite films.
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32
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Nuzhnyy D, Petzelt J, Kamba S, Martí X, Cechal T, Brooks CM, Schlom DG. Infrared phonon spectroscopy of a compressively strained (001) SrTiO₃ film grown on a (110) NdGaO₃ substrate. J Phys Condens Matter 2011; 23:045901. [PMID: 21406895 DOI: 10.1088/0953-8984/23/4/045901] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Polarized infrared reflectivity was measured between 5 and 300 K on a 17 nm thick, 1.1% compressively strained epitaxial (001) SrTiO(3) film and the orthorhombic (110) NdGaO(3) substrate upon which it was grown. A strong in-plane infrared anisotropy of the NdGaO(3) substrate was observed and polar modes with B(1u)-and a mixture of B(2u) + B(3u)-symmetry were seen. At low temperatures three new modes arose in the 90-130 cm( - 1) range, which we assigned to 4f Nd electronic transitions. The in-plane SrTiO(3) film phonons showed strong stiffening compared to the phonon frequencies of bulk unstrained SrTiO(3), particularly the soft mode, and the in-plane phonon peaks were found to split. No anomalies were detected as a function of temperature in either the infrared response or lattice parameters of the compressively strained SrTiO(3) film, providing an absence of evidence for the out-of-plane ferroelectric phase transition predicted by theory.
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Affiliation(s)
- D Nuzhnyy
- Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Praha 8, Czech Republic
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33
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Mairoser T, Schmehl A, Melville A, Heeg T, Canella L, Böni P, Zander W, Schubert J, Shai DE, Monkman EJ, Shen KM, Schlom DG, Mannhart J. Is there an intrinsic limit to the charge-carrier-induced increase of the Curie temperature of EuO? Phys Rev Lett 2010; 105:257206. [PMID: 21231624 DOI: 10.1103/physrevlett.105.257206] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2010] [Indexed: 05/30/2023]
Abstract
Rare earth doping is the key strategy to increase the Curie temperature (T(C)) of the ferromagnetic semiconductor EuO. The interplay between doping and charge carrier density (n), and the limit of the T(C) increase, however, are yet to be understood. We report measurements of n and T(C) of Gd-doped EuO over a wide range of doping levels. The results show a direct correlation between n and T(C), with both exhibiting a maximum at high doping. On average, less than 35% of the dopants act as donors, raising the question about the limit to increasing T(C).
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Affiliation(s)
- T Mairoser
- Zentrum für elektronische Korrelation und Magnetismus, Universität Augsburg, Universitätsstrasse 1, 86159 Augsburg, Germany
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34
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Jang HW, Kumar A, Denev S, Biegalski MD, Maksymovych P, Bark CW, Nelson CT, Folkman CM, Baek SH, Balke N, Brooks CM, Tenne DA, Schlom DG, Chen LQ, Pan XQ, Kalinin SV, Gopalan V, Eom CB. Ferroelectricity in strain-free SrTiO3 thin films. Phys Rev Lett 2010; 104:197601. [PMID: 20866998 DOI: 10.1103/physrevlett.104.197601] [Citation(s) in RCA: 67] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2009] [Indexed: 05/29/2023]
Abstract
Biaxial strain is known to induce ferroelectricity in thin films of nominally nonferroelectric materials such as SrTiO3. By a direct comparison of the strained and strain-free SrTiO3 films using dielectric, ferroelectric, Raman, nonlinear optical and nanoscale piezoelectric property measurements, we conclude that all SrTiO3 films and bulk crystals are relaxor ferroelectrics, and the role of strain is to stabilize longer-range correlation of preexisting nanopolar regions, likely originating from minute amounts of unintentional Sr deficiency in nominally stoichiometric samples. These findings highlight the sensitive role of stoichiometry when exploring strain and epitaxy-induced electronic phenomena in oxide films, heterostructures, and interfaces.
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Affiliation(s)
- H W Jang
- Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706, USA
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35
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Lanzillotti-Kimura ND, Fainstein A, Perrin B, Jusserand B, Soukiassian A, Xi XX, Schlom DG. Enhancement and inhibition of coherent phonon emission of a Ni film in a BaTiO3/SrTiO3 cavity. Phys Rev Lett 2010; 104:187402. [PMID: 20482207 DOI: 10.1103/physrevlett.104.187402] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2009] [Indexed: 05/06/2023]
Abstract
We report pump-probe time resolved reflectivity experiments in a hybrid air-Ni metal-BaTiO(3)/SrTiO(3) oxide mirror phonon cavity. We demonstrate that the generated coherent acoustic phonon spectra of the impulsively excited metallic film can be inhibited or enhanced in the phonon cavity with respect to a Ni film directly grown on a SrTiO(3) substrate. The experiments are compared with simulations that highlight the role of the phonon density of states in the coherent acoustic emission, extending concepts at the base of the optical Purcell effect to the field of phononics.
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Affiliation(s)
- N D Lanzillotti-Kimura
- Centro Atómico Bariloche and Instituto Balseiro, CNEA, 8400 San Carlos de Bariloche, Rio Negro, Argentina
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36
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Affiliation(s)
- J. Mannhart
- Center for Electronic Correlations and Magnetism, University of Augsburg, 86135 Augsburg, Germany
| | - D. G. Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
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37
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Zeches RJ, Rossell MD, Zhang JX, Hatt AJ, He Q, Yang CH, Kumar A, Wang CH, Melville A, Adamo C, Sheng G, Chu YH, Ihlefeld JF, Erni R, Ederer C, Gopalan V, Chen LQ, Schlom DG, Spaldin NA, Martin LW, Ramesh R. A strain-driven morphotropic phase boundary in BiFeO3. Science 2010; 326:977-80. [PMID: 19965507 DOI: 10.1126/science.1177046] [Citation(s) in RCA: 320] [Impact Index Per Article: 22.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Piezoelectric materials, which convert mechanical to electrical energy and vice versa, are typically characterized by the intimate coexistence of two phases across a morphotropic phase boundary. Electrically switching one to the other yields large electromechanical coupling coefficients. Driven by global environmental concerns, there is currently a strong push to discover practical lead-free piezoelectrics for device engineering. Using a combination of epitaxial growth techniques in conjunction with theoretical approaches, we show the formation of a morphotropic phase boundary through epitaxial constraint in lead-free piezoelectric bismuth ferrite (BiFeO3) films. Electric field-dependent studies show that a tetragonal-like phase can be reversibly converted into a rhombohedral-like phase, accompanied by measurable displacements of the surface, making this new lead-free system of interest for probe-based data storage and actuator applications.
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Affiliation(s)
- R J Zeches
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA.
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38
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Tenne DA, Turner P, Schmidt JD, Biegalski M, Li YL, Chen LQ, Soukiassian A, Trolier-McKinstry S, Schlom DG, Xi XX, Fong DD, Fuoss PH, Eastman JA, Stephenson GB, Thompson C, Streiffer SK. Ferroelectricity in ultrathin BaTiO3 films: probing the size effect by ultraviolet Raman spectroscopy. Phys Rev Lett 2009; 103:177601. [PMID: 19905783 DOI: 10.1103/physrevlett.103.177601] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2009] [Indexed: 05/28/2023]
Abstract
We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature Tc in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180 degrees domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.
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Affiliation(s)
- D A Tenne
- Department of Physics, Boise State University, 1910 University Drive, Boise, Idaho 83725-1570, USA.
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39
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Bruchhausen A, Fainstein A, Soukiassian A, Schlom DG, Xi XX, Bernhagen M, Reiche P, Uecker R. Ferroelectricity-induced coupling between light and terahertz-frequency acoustic phonons in BaTiO3/SrTiO3 superlattices. Phys Rev Lett 2008; 101:197402. [PMID: 19113309 DOI: 10.1103/physrevlett.101.197402] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2007] [Indexed: 05/27/2023]
Abstract
We report a UV-Raman study of folded acoustic vibrations in epitaxial ferroelectric BaTiO3/SrTiO3 superlattices. The folded acoustic doublets show an anomalous temperature dependence disappearing above the ferroelectric transition, which is tuned by varying the thickness of the BaTiO3 and SrTiO3 layers. A mechanism involving the acoustic phonon modulation of the spatially periodic ferroelectric polarization explains the observed temperature dependence. These results demonstrate the strong coupling between sound, charge, and light in these multifunctional nanoscale ferroelectrics.
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Affiliation(s)
- A Bruchhausen
- Instituto Balseiro & Centro Atómico Bariloche, C.N.E.A., R8402AGP Bariloche, Río Negro, Argentina
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40
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Jang HW, Baek SH, Ortiz D, Folkman CM, Das RR, Chu YH, Shafer P, Zhang JX, Choudhury S, Vaithyanathan V, Chen YB, Felker DA, Biegalski MD, Rzchowski MS, Pan XQ, Schlom DG, Chen LQ, Ramesh R, Eom CB. Strain-induced polarization rotation in epitaxial (001) BiFeO3 thin films. Phys Rev Lett 2008; 101:107602. [PMID: 18851256 DOI: 10.1103/physrevlett.101.107602] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2008] [Indexed: 05/12/2023]
Abstract
Direct measurement of the remanent polarization of high quality (001)-oriented epitaxial BiFeO3 thin films shows a strong strain dependence, even larger than conventional (001)-oriented PbTiO3 films. Thermodynamic analysis reveals that a strain-induced polarization rotation mechanism is responsible for the large change in the out-of-plane polarization of (001) BiFeO3 with biaxial strain while the spontaneous polarization itself remains almost constant.
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Affiliation(s)
- H W Jang
- Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706, USA
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41
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Denev S, Kumar A, Biegalski MD, Jang HW, Folkman CM, Vasudevarao A, Han Y, Reaney IM, Trolier-McKinstry S, Eom CB, Schlom DG, Gopalan V. Magnetic color symmetry of lattice rotations in a diamagnetic material. Phys Rev Lett 2008; 100:257601. [PMID: 18643702 DOI: 10.1103/physrevlett.100.257601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2007] [Revised: 04/20/2008] [Indexed: 05/26/2023]
Abstract
Oxygen octahedral rotations are the most common phase transitions in perovskite crystal structures. Here we show that the color symmetry of such pure elastic distortions is isomorphic to magnetic point groups, which allows their probing through distinguishing polar versus magnetic symmetry. We demonstrate this isomorphism using nonlinear optical probing of the octahedral rotational transition in a compressively strained SrTiO3 thin film that exhibits ferroelectric (4mm) and antiferrodistortive (4{'}mm{'}) phases evolving through independent phase transitions. The approach has broader applicability for probing materials with lattice rotations that can be mapped to color groups.
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Affiliation(s)
- S Denev
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
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42
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Kourkoutis LF, Hellberg CS, Vaithyanathan V, Li H, Parker MK, Andersen KE, Schlom DG, Muller DA. Imaging the phase separation in atomically thin buried SrTiO(3) layers by electron channeling. Phys Rev Lett 2008; 100:036101. [PMID: 18233004 DOI: 10.1103/physrevlett.100.036101] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2007] [Indexed: 05/25/2023]
Abstract
A phase-separation instability, resulting in the dewetting of thin SrTiO(3) films grown on Si(100) is shown by scanning transmission electron microscopy. Plan-view imaging of 1-nm thick, buried SrTiO(3) films was achieved by exploiting electron channeling through the substrate to focus the incident 0.2 nm beam down to a 0.04 nm diameter, revealing a nonuniform coverage by epitaxial SrTiO(3) islands and 2 x 1 Sr-covered regions. Density-functional calculations predict the ground state is a coexistence of 2 x 1 Sr-reconstructed Si and Sr-deficient SrTiO(3), in correspondence with the observed islanding.
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Affiliation(s)
- L Fitting Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
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43
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Vasudevarao A, Kumar A, Tian L, Haeni JH, Li YL, Eklund CJ, Jia QX, Uecker R, Reiche P, Rabe KM, Chen LQ, Schlom DG, Gopalan V. Multiferroic domain dynamics in strained strontium titanate. Phys Rev Lett 2006; 97:257602. [PMID: 17280393 DOI: 10.1103/physrevlett.97.257602] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2006] [Indexed: 05/13/2023]
Abstract
Multiferroicity can be induced in strontium titanate by applying biaxial strain. Using optical second harmonic generation, we report a transition from 4/mmm to the ferroelectric mm2 phase, followed by a transition to a ferroelastic-ferroelectric mm2 phase in a strontium titanate thin film. Piezoelectric force microscopy is used to study ferroelectric domain switching. Second harmonic generation, combined with phase-field modeling, is used to reveal the mechanism of coupled ferroelectric-ferroelastic domain wall motion. These studies have relevance to multiferroics with coupled polar and axial phenomena.
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Affiliation(s)
- A Vasudevarao
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
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44
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Tenne DA, Bruchhausen A, Lanzillotti-Kimura ND, Fainstein A, Katiyar RS, Cantarero A, Soukiassian A, Vaithyanathan V, Haeni JH, Tian W, Schlom DG, Choi KJ, Kim DM, Eom CB, Sun HP, Pan XQ, Li YL, Chen LQ, Jia QX, Nakhmanson SM, Rabe KM, Xi XX. Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy. Science 2006; 313:1614-6. [PMID: 16973874 DOI: 10.1126/science.1130306] [Citation(s) in RCA: 273] [Impact Index Per Article: 15.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.
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Affiliation(s)
- D A Tenne
- Department of Physics, Pennsylvania State University, University Park, PA 16802, USA.
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45
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Zavaliche F, Zheng H, Mohaddes-Ardabili L, Yang SY, Zhan Q, Shafer P, Reilly E, Chopdekar R, Jia Y, Wright P, Schlom DG, Suzuki Y, Ramesh R. Electric field-induced magnetization switching in epitaxial columnar nanostructures. Nano Lett 2005; 5:1793-6. [PMID: 16159226 DOI: 10.1021/nl051406i] [Citation(s) in RCA: 110] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
We present direct evidence for room-temperature magnetization reversal induced by an electric field in epitaxial ferroelectric BiFeO3-ferrimagnetic CoFe2O4 columnar nanostructures. Piezoelectric force microscopy and magnetic force microscopy were used to locally image the coupled piezoelectric-magnetic switching. Quantitative analyses give a perpendicular magnetoelectric susceptibility of approximately 1.0 x 10(-2) G cm/V. The observed effect is due to the strong elastic coupling between the two ferric constituents as the result of the three-dimensional heteroepitaxy.
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Affiliation(s)
- F Zavaliche
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
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46
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Wang J, Scholl A, Zheng H, Ogale SB, Viehland D, Schlom DG, Spaldin NA, Rabe KM, Wuttig M, Mohaddes L, Neaton J, Waghmare U, Zhao T, Ramesh R. Response to Comment on "Epitaxial BiFeO
3
Multiferroic Thin Film Heterostructures". Science 2005. [DOI: 10.1126/science.1103959] [Citation(s) in RCA: 180] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Affiliation(s)
- J. Wang
- Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA
| | - A. Scholl
- Advanced Light Source, Lawrence Berkeley Laboratory, Berkeley CA, 94720, USA
| | - H. Zheng
- Department of Materials Science and Engineering, University of Maryland, College Park
| | - S. B. Ogale
- Department of Physics, University of Maryland, College Park
| | - D. Viehland
- Department of Materials Science and Engineering, Virginia Polytechnic Institute, Blacksburg, VA 24061, USA
| | - D. G. Schlom
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802–5055, USA
| | - N. A. Spaldin
- Materials Department, University of California, Santa Barbara, CA 93106–5050, USA
| | - K. M. Rabe
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
| | - M. Wuttig
- Department of Materials Science and Engineering, University of Maryland, College Park
| | - L. Mohaddes
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA 94720
| | - J. Neaton
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley
| | | | - T. Zhao
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley
| | - R. Ramesh
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley
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47
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Choi KJ, Biegalski M, Li YL, Sharan A, Schubert J, Uecker R, Reiche P, Chen YB, Pan XQ, Gopalan V, Chen LQ, Schlom DG, Eom CB. Enhancement of ferroelectricity in strained BaTiO3 thin films. Science 2004; 306:1005-9. [PMID: 15528439 DOI: 10.1126/science.1103218] [Citation(s) in RCA: 432] [Impact Index Per Article: 21.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.
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Affiliation(s)
- K J Choi
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
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48
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Pogrebnyakov AV, Redwing JM, Raghavan S, Vaithyanathan V, Schlom DG, Xu SY, Li Q, Tenne DA, Soukiassian A, Xi XX, Johannes MD, Kasinathan D, Pickett WE, Wu JS, Spence JCH. Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening. Phys Rev Lett 2004; 93:147006. [PMID: 15524834 DOI: 10.1103/physrevlett.93.147006] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2004] [Indexed: 05/24/2023]
Abstract
We report a systematic increase of the superconducting transition temperature T(c) with a biaxial tensile strain in MgB2 films to well beyond the bulk value. The tensile strain increases with the MgB2 film thickness, caused primarily by the coalescence of initially nucleated discrete islands (the Volmer-Weber growth mode.) The T(c) increase was observed in epitaxial films on SiC and sapphire substrates, although the T(c) values were different for the two substrates due to different lattice parameters and thermal expansion coefficients. We identified, by first-principles calculations, the underlying mechanism for the T(c) increase to be the softening of the bond-stretching E(2g) phonon mode, and we confirmed this conclusion by Raman scattering measurements. The result suggests that the E(2g) phonon softening is a possible avenue to achieve even higher T(c) in MgB2-related material systems.
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Affiliation(s)
- A V Pogrebnyakov
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
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49
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Haeni JH, Irvin P, Chang W, Uecker R, Reiche P, Li YL, Choudhury S, Tian W, Hawley ME, Craigo B, Tagantsev AK, Pan XQ, Streiffer SK, Chen LQ, Kirchoefer SW, Levy J, Schlom DG. Room-temperature ferroelectricity in strained SrTiO3. Nature 2004; 430:758-61. [PMID: 15306803 DOI: 10.1038/nature02773] [Citation(s) in RCA: 467] [Impact Index Per Article: 23.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2004] [Accepted: 06/22/2004] [Indexed: 11/09/2022]
Abstract
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T(c)) is traditionally accomplished by chemical substitution-as in Ba(x)Sr(1-x)TiO(3), the material widely investigated for microwave devices in which the dielectric constant (epsilon(r)) at GHz frequencies is tuned by applying a quasi-static electric field. Heterogeneity associated with chemical substitution in such films, however, can broaden this phase transition by hundreds of degrees, which is detrimental to tunability and microwave device performance. An alternative way to adjust T(c) in ferroelectric films is strain. Here we show that epitaxial strain from a newly developed substrate can be harnessed to increase T(c) by hundreds of degrees and produce room-temperature ferroelectricity in strontium titanate, a material that is not normally ferroelectric at any temperature. This strain-induced enhancement in T(c) is the largest ever reported. Spatially resolved images of the local polarization state reveal a uniformity that far exceeds films tailored by chemical substitution. The high epsilon(r) at room temperature in these films (nearly 7,000 at 10 GHz) and its sharp dependence on electric field are promising for device applications.
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Affiliation(s)
- J H Haeni
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802-5005, USA
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50
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Mohaddes-Ardabili L, Zheng H, Ogale SB, Hannoyer B, Tian W, Wang J, Lofland SE, Shinde SR, Zhao T, Jia Y, Salamanca-Riba L, Schlom DG, Wuttig M, Ramesh R. Self-assembled single-crystal ferromagnetic iron nanowires formed by decomposition. Nat Mater 2004; 3:533-8. [PMID: 15273743 DOI: 10.1038/nmat1162] [Citation(s) in RCA: 53] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2004] [Accepted: 05/17/2004] [Indexed: 05/07/2023]
Abstract
Arrays of perpendicular ferromagnetic nanowires have recently attracted considerable interest for their potential use in many areas of advanced nanotechnology. We report a simple approach to create self-assembled nanowires of alpha-Fe through the decomposition of a suitably chosen perovskite. We illustrate the principle behind this approach using the reaction 2La(0.5)Sr(0.5)FeO(3) --> LaSrFeO(4) + Fe + O(2) that occurs during the deposition of La(0.5)Sr(0.5)FeO(3) under reducing conditions. This leads to the spontaneous formation of an array of single-crystalline alpha-Fe nanowires embedded in LaSrFeO(4) matrix, which grow perpendicular to the substrate and span the entire film thickness. The diameter and spacing of the nanowires are controlled directly by deposition temperature. The nanowires show uniaxial anisotropy normal to the film plane and magnetization close to that of bulk alpha-Fe. The high magnetization and sizable coercivity of the nanowires make them desirable for high-density data storage and other magnetic-device applications.
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Affiliation(s)
- L Mohaddes-Ardabili
- Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
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