Carbon-Rich Plasma-Deposited Silicon Oxycarbonitride Films Derived from 4-(Trimethylsilyl)morpholine as a Novel Single-Source Precursor

4-(trimethylsilyl)morpholine O(CH2CH2)2NSi(CH3)3 (TMSM) was investigated as a single-source precursor for SiCNO films synthesis. Optical emission spectroscopy of plasma generated from TMSM/He, TMSM/H2, and TMSM/NH3 gas mixtures revealed the presence of N2, CH, H, CN, and CO species. The last two are suggested to be responsible for the lowering of carbon concentration in the films in comparison with the precursor. The refractive index ranged from 1.5 to 2.0, and bandgap varied from 2.0 to 4.6 eV, which pointed that some of the films can be used as antireflective coatings in silicon photovoltaic cell technologies and dielectric layers in electronic devices.

Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research for several decades with a variety of approaches investigated to achieve optimal properties for multiple applications, with an emphasis on properties relevant to biomedical devices in the past decade. This review summarizes the results of many optimization studies, identifying strategies that have been used to achieve desirable film properties and discussing the proposed physical interpretations. In addition, divergent results from studies are contrasted, with attempts to reconcile the results, while areas of uncertainty are highlighted.

Surface Modification of Flax Fibers with TMCTS-Based PECVD for Improved Thermo-Mechanical Properties of PLA/Flax Fiber Composites

Significant progress has been made in recent years in the use of atmospheric pressure plasma techniques for surface modification. This research focused on the beneficial effects of these processes on natural by-products, specifically those involving natural fiber-based materials. The study explored the deposition of hydrophobic organosilicon-like thin films onto flax fibres through plasma-enhanced chemical vapour deposition (PECVD), using tetramethylcyclotetrasiloxane (TMCTS) as the precursor. After the successful deposition of hydrophobic organosilicon-like thin films onto the flax fibres, polylactic acid (PLA) composite materials were fabricated. This fabrication process sets the stage for an in-depth analysis of the modified materials. Subsequently, these flax fabrics were subjected to meticulous characterization through scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. The results demonstrated successful TMCTS deposition on the surface which led to a complete hydrophobization of the flax fibers. Mechanical tests of the PLA/flax fibre composites revealed a significant improvement in load transfer and interfacial compatibility following the surface modification of the flax fibres. This improvement was attributed to the enhanced adhesion between the modified fibres and the PLA matrix. The findings highlight the potential of TMCTS-based PECVD as a practical surface modification technique, effectively enhancing the mechanical properties of PLA/flax fibre composites. These developments open exciting possibilities for sustainable and high-performance composite materials in various industries.

All-Nitrogen Energetic Material Cubic Gauche Polynitrogen: Plasma Synthesis and Thermal Performance

Numerous theoretical calculations have demonstrated that polynitrogen with an extending polymeric network is an ultrahigh-energy all-nitrogen material. Typical samples, such as cubic gauche polynitrogen (cg-N), have been synthesized, but the thermal performance of polynitrogen has not been unambiguously determined. Herein, macroscopic samples of polynitrogen were synthesized utilizing a coated substrate, and their thermal decomposition behavior was investigated. Polynitrogen with carbon nanotubes was produced using a plasma-enhanced chemical vapor deposition method and characterized using infrared, Raman, X-ray diffraction X-ray photoelectron spectroscopy and transmission electron microscope. The results showed that the structure of the deposited polynitrogen was consistent with that of cg-N and the amount of deposition product obtained with coated substrates increased significantly. Differential scanning calorimetry (DSC) at various heating rates and TG-DSC-FTIR-MS analyses were performed. The thermal decomposition temperature of cg-N was determined to be 429 °C. The apparent activation energy (Ea) of cg-N calculated by the Kissinger and Ozawa equations was 84.7 kJ/mol and 91.9 kJ/mol, respectively, with a pre-exponential constant (lnAk) of 12.8 min-1. In this study, cg-N was demonstrated to be an all-nitrogen material with good thermal stability and application potential to high-energy-density materials.

Structural, Optical, Electrical, and Thermoelectric Properties of Bi2Se3 Films Deposited at a High Se/Bi Flow Rate

Low-temperature synthesis of Bi2Se3 thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi2Se3 film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi2Se3 film exhibited 90% higher transparency in the mid-IR region, demonstrating its potential as a functional material in the atmospheric window. Excellent mobility of 2094 cm2/V·s at room temperature is attributed to the n-type conductive properties of the film. Thermoelectrical properties indicate that with the increase in Se vapor, a slight decrease in conductivity of the film is observed at room temperature with an obvious increase in the Seebeck coefficient. In addition, Bi2Se3 thin film showed an enhanced power factor of as high as 3.41 μW/cmK2. Therefore, plasma-enhanced chemical vapor deposition (PECVD)-grown Bi2Se3 films on Al2O3 (001) substrates demonstrated promising thermoelectric properties.

From Basics to Frontiers: A Comprehensive Review of Plasma-Modified and Plasma-Synthesized Polymer Films

This comprehensive review begins by tracing the historical development and progress of cold plasma technology as an innovative approach to polymer engineering. The study emphasizes the versatility of cold plasma derived from a variety of sources including low-pressure glow discharges (e.g., radiofrequency capacitively coupled plasmas) and atmospheric pressure plasmas (e.g., dielectric barrier devices, piezoelectric plasmas). It critically examines key operational parameters such as reduced electric field, pressure, discharge type, gas type and flow rate, substrate temperature, gap, and how these variables affect the properties of the synthesized or modified polymers. This review also discusses the application of cold plasma in polymer surface modification, underscoring how changes in surface properties (e.g., wettability, adhesion, biocompatibility) can be achieved by controlling various surface processes (etching, roughening, crosslinking, functionalization, crystallinity). A detailed examination of Plasma-Enhanced Chemical Vapor Deposition (PECVD) reveals its efficacy in producing thin polymeric films from an array of precursors. Yasuda's models, Rapid Step-Growth Polymerization (RSGP) and Competitive Ablation Polymerization (CAP), are explained as fundamental mechanisms underpinning plasma-assisted deposition and polymerization processes. Then, the wide array of applications of cold plasma technology is explored, from the biomedical field, where it is used in creating smart drug delivery systems and biodegradable polymer implants, to its role in enhancing the performance of membrane-based filtration systems crucial for water purification, gas separation, and energy production. It investigates the potential for improving the properties of bioplastics and the exciting prospects for developing self-healing materials using this technology.

Biosensor Based on Graphene Directly Grown by MW-PECVD for Detection of COVID-19 Spike (S) Protein and Its Entry Receptor ACE2

Biosensors based on graphene field-effect transistors (G-FET) for detecting COVID-19 spike S protein and its receptor ACE2 were reported. The graphene, directly synthesized on SiO2/Si substrate by microwave plasma-enhanced chemical vapor deposition (MW-PECVD), was used for FET biosensor fabrication. The commercial graphene, CVD-grown on a copper substrate and subsequently transferred onto a glass substrate, was applied for comparison purposes. The graphene structure and surface morphology were studied by Raman scattering spectroscopy and atomic force microscope. Graphene surfaces were functionalized by an aromatic molecule PBASE (1-pyrenebutanoic acid succinimidyl ester), and subsequent immobilization of the receptor angiotensin-converting enzyme 2 (ACE2) was performed. A microfluidic system was developed, and transfer curves of liquid-gated FET were measured after each graphene surface modification procedure to investigate ACE2 immobilization by varying its concentration and subsequent spike S protein detection. The directly synthesized graphene FET sensitivity to the receptor ACE2, evaluated in terms of the Dirac voltage shift, exceeded the sensitivity of the transferred commercial graphene-based FET. The concentration of the spike S protein was detected in the range of 10 ag/mL up to 10 μg/mL by using a developed microfluidic system and measuring the transfer characteristics of the liquid-gated G-FETs. It was found that the shift of the Dirac voltage depends on the spike S concentration and was 27 mV with saturation at 10 pg/mL for directly synthesized G-FET biosensor, while for transferred G-FET, the maximal shift of 70 mV was obtained at 10 μg/mL with a tendency of saturation at 10 ng/mL. The detection limit as low as 10 ag/mL was achieved for both G-FETs. The sensitivity of the biosensors at spike S concentration of 10 pg/mL measured as relative current change at a constant gate voltage corresponding to the highest transconductance of the G-FETs was found at 5.6% and 8.8% for directly synthesized and transferred graphene biosensors, respectively. Thus, MW-PECVD-synthesized graphene-based biosensor demonstrating high sensitivity and low detection limit has excellent potential for applications in COVID-19 diagnostics.

Effect of Plasma Excitation Power on the SiOxCyHz/TiOx Nanocomposite

Titanium dioxide has attracted a great deal of attention in the field of environmental purification due to its photocatalytic activity under ultraviolet light. Photocatalytic efficiency and the energy required to initiate the process remain the drawbacks that hinder the widespread adoption of the process. Consistently with this, it is proposed here the polymerization of hexamethyldisiloxane fragments simultaneously to TiO₂ sputtering for the production of thin films in low-pressure plasma. The effect of plasma excitation power on the molecular structure and chemical composition of the films was evaluated by infrared spectroscopy. Wettability and surface energy were assessed by a sessile drop technique, using deionized water and diiodomethane. The morphology and elemental composition of the films were determined using scanning electron microscopy and energy dispersive spectroscopy, respectively. The thickness and roughness of the resulting films were measured using profilometry. Organosilicon-to-silica films, with different properties, were deposited by combining both deposition processes. Titanium was detected from the structures fabricated by the hybrid method. It has been observed that the proportion of titanium and particles incorporated into silicon-based matrices depends on the plasma excitation power. In general, a decrease in film thickness with increasing power has been observed. The presence of Ti in the plasma atmosphere alters the plasma deposition mechanism, affecting film deposition rate, roughness, and wettability. An interpretation of the excitation power dependence on the plasma activation level and sputtering yield is proposed. The methodology developed here will encourage researchers to create TiO₂ films on a range of substrates for their prospective use as sensor electrodes, water and air purification systems, and biocompatible materials.

Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditions

We report silicon nanowire (SiNW) growth with a novel Cu-In bimetallic catalyst using a plasma-enhanced chemical vapor deposition (PECVD) method. We study the structure of the catalyst nanoparticles (NPs) throughout a two-step process that includes a hydrogen plasma pre-treatment at 200 °C and the SiNW growth itself in a hydrogen-silane plasma at 420 °C. We show that the H₂-plasma induces a coalescence of the Cu-rich cores of as-deposited thermally evaporated NPs that does not occur when the same annealing is applied without plasma. The SiNW growth process at 420 °C induces a phase transformation of the catalyst cores to Cu₇In₃; while a hydrogen plasma treatment at 420 °C without silane can lead to the formation of the Cu₁₁In₉ phase. In situ transmission electron microscopy experiments show that the SiNWs synthesis with Cu-In bimetallic catalyst NPs follows an essentially vapor-solid-solid process. By adjusting the catalyst composition, we manage to obtain small-diameter SiNWs-below 10 nm-among which we observe the metastable hexagonal diamond phase of Si, which is predicted to have a direct bandgap.

Review of Plasma Processing for Polymers and Bio-Materials Using a Commercial Frequency (50/60 Hz)-Generated Discharge

This manuscript introduces the properties and diverse applications of plasma generated using commercial frequencies of 50/60 Hz. Commercial frequency (CF) derived plasma exhibits characteristics similar to DC discharge but with an electrical polarity and a non-continuous discharge. Due to the low-frequency nature, the reactor configurations usually are capacitively coupled plasma type. The advantages of this method include its simple power structure, low-reaction temperature, and low substrate damage. The electrical polarity can prevent charge buildup on the substrates and deposited films, thereby reducing substrate damage. The simple, low-cost, and easy-to-operate power structure makes it suitable for laboratory-scale usage. Additionally, the various applications, including plasma-enhanced vapor deposition, sputtering, dielectric barrier discharge, and surface modification, and their outcomes in the CF-derived plasma processes are summarized. The conclusion drawn is that the CF-derived plasma process is useful for laboratory-scale utilization due to its simplicity, and the results of the plasma process are also outstanding.

Plasma Enhanced High-Rate Deposition of Advanced Film Materials by Metal Reactive Evaporation in Organosilicon Vapors

Dense homogeneous nanocomposite TiSiCN coatings with a thickness of up to 15 microns and a hardness of up to 42 GPa were obtained by the method of reactive titanium evaporation in a hollow cathode arc discharge in an Ar + C₂H₂ + N₂-gas mixture with the addition of hexamethyldisilazane (HMDS). An analysis of the plasma composition showed that this method allowed for a wide range of changes in the activation degree of all components of the gas mixture, providing a high (up to 20 mA/cm²) ion current density. It is possible to widely change the chemical composition, microstructure, deposition rate, and properties of coatings obtained by this method, by changing the pressure, composition, and activation degree of the vapor-gas mixture. An increase in the fluxes of C₂H₂, N₂, HMDS, and discharge current leads to an increase in the rate of coating formation. However, the optimal coatings from the point of view of microhardness were obtained at a low discharge current of 10 A and relatively low contents of C₂H₂ (1 sccm) and HMDS (0.3 g/h), exceeding which leads to a decrease in the hardness of the films and the deterioration of their quality, which can be explained by the excessive ionic exposure and the non-optimal chemical composition of the coatings.

Low-Temperature Direct Growth of Nanocrystalline Multilayer Graphene on Silver with Long-Term Surface Passivation

A wide variety of transition metals, including copper and gold, have been successfully used as substrates for graphene growth. On the other hand, it has been challenging to grow graphene on silver, so realistic applications by combining graphene and silver for improved electrode stability and enhanced surface plasmon resonance in organic light-emitting diodes and biosensing have not been realized to date. Here, we demonstrate the surface passivation of silver through the single-step rapid growth of nanocrystalline multilayer graphene on silver via low-temperature plasma-enhanced chemical vapor deposition (PECVD). The effect of the growth time on the graphene quality and the underlying silver characteristics is investigated by Raman spectroscopy, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and cross-sectional annular dark-field scanning transmission electron microscopy (ADF-STEM). These results reveal nanocrystalline graphene structures with turbostratic layer stacking. Based on the XPS and ADF-STEM results, a PECVD growth mechanism of graphene on silver is proposed. The multilayer graphene also provides excellent long-term protection of the underlying silver surface from oxidation after 5 months of air exposure. This development thus paves the way toward realizing technological applications based on graphene-protected silver surfaces and electrodes as well as hybrid graphene-silver plasmonics.

Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride

Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. Thus, the printed SWCNT-based TFTs (pSWCNT-TFTs) showed significant technological potential such as integrated circuits, conformable sensors, and display backplanes. However, the long-term environmental stability of the pSWCNT-TFTs hinders their commercialization. Thus, to extend the stability of the pSWCNT-TFTs, such devices should be passivated with low water and oxygen permeability. Herein, we introduced the silicon nitride (SiNx) passivation method on the pSWCNT-TFTs via a combination of roll-to-roll (R2R) gravure and the roll-to-roll plasma-enhanced vapor deposition (R2R-PECVD) process at low temperature (45 °C). We found that SiNx-passivated pSWCNT-TFTs showed ± 0.50 V of threshold voltage change at room temperature for 3 days and ±1.2 V of threshold voltage change for 3 h through a Temperature Humidity Test (85/85 test: Humidity 85%/Temperature 85 °C) for both p-type and n-type pSWCNT-TFTs. In addition, we found that the SiNx-passivated p-type and n-type pSWCNT-TFT-based CMOS-like ring oscillator, or 1-bit code generator, operated well after the 85/85 test for 24 h.

Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications

In this study, a silicon carbon nitride (SiCN) thin film was grown with a thickness of 5~70 nm by the plasma-enhanced chemical vapor deposition (PECVD) method, and the oxygen permeation characteristics were analyzed according to the partial pressure ratio (PPR) of tetramethylsilane (4MS) to the total gas amount during the film deposition. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), and X-ray reflectivity (XRR) were used to investigate the composition and bonding structures of the SiCN film. An atomic force microscope (AFM) was used to examine the surface morphology of the SiCN films to see the porosity. The analysis indicated that Si-N bonds were dominant in the SiCN films, and a higher carbon concentration made the film more porous. To evaluate the oxygen permeation, a highly accelerated temperature and humidity stress test (HAST) evaluation was performed. The films grown at a high 4MS PPR were more susceptible to oxygen penetration, which changed Si-N bonds to Si-N-O bonds during the HAST. These results indicate that increasing the 4MS PPR made the SiCN film more porous and containable for oxygen. As an application, for the first time, SiCN dielectric film is suggested to be applied to resistive random access memory (RRAM) as an oxygen reservoir to store oxygen and prevent a reaction between metal electrodes and oxygen. The endurance characteristics of RRAM are found to be enhanced by applying the SiCN.

In Situ Grown Vertically Oriented Graphene Coating on Copper by Plasma-Enhanced CVD to Form Superhydrophobic Surface and Effectively Protect Corrosion

Graphene exhibits great potential for the corrosion protection of metals, because of its low permeability and high chemical stability. To enhance the anticorrosion ability of Cu, we use plasma-enhanced chemical vapor deposition (PECVD) to prepare a vertically oriented few-layer graphene (VFG) coating on the surface of Cu. The Cu coated with VFG shows superhydrophobic surface with a contact angle of ~150°. The VFG coating is used to significantly increase the anticorrosion ability, enhanced by the chemical stability and the unique geometric structure of vertically oriented graphene. The corrosion rate of VFG-Cu was about two orders of magnitude lower than that of bare Cu. This work highlights the special synthesized way of PECVD and superhydrophobic surface of vertical structures of graphene as coatings for various applications.

Platinum Nanocrystals Embedded in Three-Dimensional Graphene for High-Performance Li-O2 Batteries

Graphene is considered as a promising cathode candidate for Li-O₂ batteries because of its excellent electronic conductivity and oxygen adsorption capacity. However, for Li-O₂ batteries, the self-stacking effect caused by two-dimensional (2D) structural properties of graphene is not conducive to the rapid oxygen transport and mass transfer process, thereby affecting the electrode kinetics. Here, we successfully prepared three-dimensional (3D) graphene with different scales by plasma-enhanced chemical vapor deposition and physical pulverization strategies, in which CH₄ is the carbon source and H₂/Ar mixed gas is the etching gas. Meanwhile, we fabricated 3D graphene-based Pt nanocatalysts by an ultraviolet-assisted construction strategy and then applied them in Li-O₂ batteries. Systematic studies reveal a special relevance between electrochemical performance and graphene particle size, and the smaller-sized 3D graphene can better maintain the microstructure distribution in both the Pt embedding process and electrochemical applications, which is beneficial to the transport of oxygen and Li ions, lowering the decomposition energy barrier of Li₂O₂, and further obtaining reduced charge overpotential (0.22 V) and prolonged cycle life for Li-O₂ batteries. Finally, we anticipate that this work could promote the practical application of 2D materials and larger-sized 3D materials in Li-O₂ batteries.

Enhanced Energetic Performance of Aluminum Nanoparticles by Plasma Deposition of Perfluorinated Nanofilms

The performance of Al as nanoenergetic material in solid fuel propulsion or additive in liquid fuels is limited by the presence of the native oxide layer at the surface, which represents a significant weight fraction, does not contribute to heat release during oxidation, and acts as a diffusion barrier to Al oxidation. We develop an efficient technique in which the oxide layer is effectively turned into an energetic component via a reaction with fluorine that is coated in the form of a fluorocarbon nanofilm on the Al surface by plasma-enhanced chemical vapor deposition. Perfluorodecalin vapors are introduced in a low-pressure plasma reactor to produce nanofilms on the surface of Al nanoparticles, whose thickness is controlled with nanolevel precision as demonstrated by high-resolution transmission electron microscopy images. Coated particles show superior heat release, with a maximum enhancement of 50% at a thickness of 10 nm. This significant improvement is attributed to the chemical interaction between Al₂O₃ and F to form AlF₃, which removes the oxide barrier via an exothermic reaction and contributes to the amount of heat released during thermal oxidation. The chemistry and mechanism of the enhancement effect of the plasma nanofilms are explained with the help of X-ray photoelectron spectroscopy, X-ray diffraction, high-angle annular dark-field scanning transmission electron microscopy-energy dispersive spectroscopy, thermogravimetric analysis, and differential scanning calorimetry.

Preparation of a ZnO Nanostructure as the Anode Material Using RF Magnetron Sputtering System

In this study, a four-inch zinc oxide (ZnO) nanostructure was synthesized using radio frequency (RF) magnetron sputtering to maximize the electrochemical performance of the anode material of a lithium-ion battery. All materials were grown on cleaned p-type silicon (100) wafers with a deposited copper layer inserted at the stage. The chamber of the RF magnetron sputtering system was injected with argon and oxygen gas for the growth of the ZnO films. A hydrogen (H₂) reduction process was performed in a plasma enhanced chemical vapor deposition (PECVD) chamber to synthesize the ZnO nanostructure (ZnO NS) through modification of the surface structure of a ZnO film. Field emission scanning electron microscopy and atomic force microscopy were performed to confirm the surface and structural properties of the synthesized ZnO NS, and cyclic voltammetry was used to examine the electrochemical characteristics of the ZnO NS. Based on the Hall measurement, the ZnO NS subjected to H₂ reduction had a higher electron mobility and lower resistivity than the ZnO film. The ZnO NS that was subjected to H₂ reduction for 5 min and 10 min had average roughness of 3.117 nm and 3.418 nm, respectively.

Growth Properties of Carbon Nanowalls on Nickel and Titanium Interlayers

This research is conducted in order to investigate the structural and electrical characteristics of carbon nanowalls (CNWs) according to the sputtering time of interlayers. The thin films were deposited through RF magnetron sputtering with a 4-inch target (Ni and Ti) on the glass substrates, and the growth times of the deposition were 5, 10, and 30 min. Then, a microwave plasma-enhanced chemical vapor deposition (PECVD) system was used to grow CNWs on the interlayer-coated glass substrates by using a mixture of H₂ and CH₄ gases. The FE-SEM analysis of the cross-sectional and planar images confirmed that the thickness of interlayers linearly increased according to the deposition time. Furthermore, CNWs grown on the Ni interlayer were taller and denser than those grown on the Ti interlayer. Hall measurement applied to measure sheet resistance and conductivity confirmed that the electrical efficiency improved significantly as the Ni or Ti interlayers were used. Additionally, UV-Vis spectroscopy was also used to analyze the variations in light transmittance; CNWs synthesized on Ni-coated glass have lower average transmittance than those synthesized on Ti-coated glass. Based on this experiment, it was found that the direct growth of CNW was possible on the metal layer and the CNWs synthesized on Ni interlayers showed outstanding structural and electrical characterizations than the remaining interlayer type.

Preparation of Carbon Nanowall and Carbon Nanotube for Anode Material of Lithium-Ion Battery

Carbon nanowall (CNW) and carbon nanotube (CNT) were prepared as anode materials of lithium-ion batteries. To fabricate a lithium-ion battery, copper (Cu) foil was cleaned using an ultrasonic cleaner in a solvent such as trichloroethylene (TCE) and used as a substrate. CNW and CNT were synthesized on Cu foil using plasma-enhanced chemical vapor deposition (PECVD) and water dispersion, respectively. CNW and CNT were used as anode materials for the lithium-ion battery, while lithium hexafluorophosphate (LiPF₆) was used as an electrolyte to fabricate another lithium-ion battery. For the structural analysis of CNW and CNT, field emission scanning electron microscope (FE-SEM) and Raman spectroscopy analysis were performed. The Raman analysis showed that the carbon nanotube in composite material can compensate for the defects of the carbon nanowall. Cyclic voltammetry (CV) was employed for the electrochemical properties of lithium-ion batteries, fabricated by CNW and CNT, respectively. The specific capacity of CNW and CNT were calculated as 62.4 mAh/g and 49.54 mAh/g. The composite material with CNW and CNT having a specific capacity measured at 64.94 mAh/g, delivered the optimal performance.

Analysis, Synthesis and Characterization of Thin Films of a-Si:H (n-type and p-type) Deposited by PECVD for Solar Cell Applications

In this paper, the analysis, synthesis and characterization of thin films of a-Si:H deposited by PECVD were carried out. Three types of films were deposited: In the first series (00 process), an intrinsic a-Si:H film was doped. In the second series (A1-A5 process), n-type samples were doped, and to carry this out, a gas mixture of silane (SiH4), dihydrogen (H2) and phosphine (PH3) was used. In the third series (B1-B5 process), p-type samples were doped using a mixture of silane (SiH4), dihydrogen (H2) and diborane (B2H6). The films' surface morphology was characterized by atomic force microscopy (AFM), while the analysis of the films was performed by scanning electron microscopy (SEM), and UV-visible ellipsometry was used to obtain the optical band gap and film thickness. According to the results of the present study, it can be concluded that the best conditions can be obtained when the flow of dopant gases (phosphine or diborane) increases, as seen in the conductivity graphs, where the films with the highest flow of dopant gas reached the highest conductivities compared to the minimum required for materials made of a-Si:H silicon for high-quality solar cells. It can be concluded from the results that the magnitude of the conductivity, which increased by several orders, represents an important result, since we could improve the efficiency of solar cells based on a-Si:H.

Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays

Dense SiC ceramics were fabricated by high-temperature physical vapor transport (HTPVT) growth process using SiC nanoarrays as the crystal seeds, which was obtained by vacuum heat treatment of amorphous SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) with a porous anodic aluminum oxide (AAO) template. In the HTPVT process, two-step holding was adopted, and the temperature at the first step was controlled at 2100 and 2150 °C to avoid SiC nanoarrays evaporation, and the grain size of SiC crystal increased with the increase in temperature and decrease in the pressure of Ar. The temperature of the second step was 2300 °C, and rapid SiC grain growth and gradual densification were achieved. The prepared SiC ceramics exhibited a relative density of more than 99%, an average grain size of about 100 μm, a preferred orientation along the (0 0 0 6) plane, a Vickers hardness of about 29 GPa, a flexural strength of about 360 MPa, and thermal conductivity at room temperature of more than 200 W·m⁻¹·K⁻¹.

Characterising a Custom-Built Radio Frequency PECVD Reactor to Vary the Mechanical Properties of TMDSO Films

Plasma-polymerised tetramethyldisiloxane (TMDSO) films are frequently applied as coatings for their abrasion resistance and barrier properties. By manipulating the deposition parameters, the chemical structure and thus mechanical properties of the films can also be controlled. These mechanical properties make them attractive as energy adsorbing layers for a range of applications, including carbon fibre composites. In this study, a new radio frequency (RF) plasma-enhanced chemical vapour deposition (PECVD) plasma reactor was designed with the capability to coat fibres with an energy adsorbing film. A key characterisation step for the system was establishing how the properties of the TMDSO films could be modified and compared with those deposited using a well-characterized microwave (MW) PECVD reactor. Film thickness and chemistry were determined with ellipsometry and X-ray photoelectron spectroscopy, respectively. The mechanical properties were investigated by nanoindentation and atomic force microscopy with peak-force quantitative nanomechanical mapping. The RF PECVD films had a greater range of Young's modulus and hardness values than the MW PECVD films, with values as high as 56.4 GPa and 7.5 GPa, respectively. These results demonstrated the varied properties of TMDSO films that could in turn be deposited onto carbon fibres using a custom-built RF PECVD reactor.

Polymer-Compatible Low-Temperature Plasma-Enhanced Chemical Vapor Deposition of Graphene on Electroplated Cu for Flexible Hybrid Electronics

Flexible hybrid electronics and fan-out redistribution layers rely on electroplating Cu on polymers. In this work, direct low-temperature plasma-enhanced chemical vapor deposition (PECVD) of graphene on electroplated Cu over polyimide substrates is demonstrated, and the deposition of graphene is found to passivate and strengthen the electroplated Cu circuit. The effect of the H₂/CH₄ ratio on the PECVD graphene growth is also investigated, which is shown to affect not only the quality of graphene but also the durability of Cu. 100,000 cycles of folding with a bending radius of 2.5 mm and the corresponding resistance tests are carried out, revealing that Cu circuits covered by graphene grown with a higher H₂/CH₄ ratio can sustain many more bending cycles. Additionally, graphene coverage is shown to suppress the formation of copper oxides in ambient environment for at least 8 weeks after the PECVD process.

Enhanced culturing of adipose derived mesenchymal stem cells on surface modified polystyrene Petri dishes fabricated by plasma enhanced chemical vapor deposition system

Mesenchymal stem cells (MSCs) have received considerable attention as therapeutic cells for regenerative medicine and tissue engineering, because of their ability to replace damaged cells or regenerate surrounding cells. There are many technical difficulties in the mass production of high-quality stem cells because the stem cells must maintain an efficient proliferative cell state during in vitro culture. The results of this study show that plasma surface-modification enhanced significantly the culture of adipose-derived mesenchymal stem cells (ASCs) on the polystyrene (PS) Petri dishes. Ar, O₂ , pyrrole, and 4,7,10-trioxa-1,13-tridecanediamine (TTDDA) were used as the gas and/or precursors for plasma modification. Specifically, surfaces of PS Petri dishes, coated with plasma polymerized pyrrole (ppPy) and plasma polymerized TTDDA (ppTTDDA) were found to contain amine and carboxyl functional groups, respectively. Ar and O₂ plasma-treated PS Petri dishes have similar culture abilities (±1.2 times) to commercially available tissue culture polystyrene (TCPS) dishes, and PS Petri dishes coated with ppPy and ppTTDDA have significantly enhanced culture abilities (2.4 times) at 96 hr compared with TCPS dishes. Western blotting was performed using antibodies against stem cell marker proteins to confirm the stemness properties of stem cells, in the sense that the expressions of the antibody proteins such as CD44, CD73, and CD105 in plasma modified samples were similar to or higher than those in TCPS dishes.

Controlling solid-liquid-solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO2nanoparticles

Alloying Ge with Sn is one of the promising ways for achieving Si compatible optoelectronics. Here, GeSn nanowires (NWs) are realized via nano-crystallization of a hydrogenated amorphous Ge (a-Ge:H) layer with the help of metal Sn droplets. The full process consists of three steps: (1) SnO₂nanoparticle (NP) reduction in a hydrogen plasma to produce Sn catalyst; (2) a-Ge:H deposition at 120 °C and (3) annealing. GeSn alloys with rich morphologies such as discrete nanocrystals (NCs), random, and straight NWs were successfully synthesized by changing process conditions. We show that annealing under Ar plasma favors the elaboration of straight GeSn NWs in contrast to the conventional random GeSn NWs obtained when annealing is performed under a H₂atmosphere. Interestingly, GeSn in the form of discrete NCs can be fabricated during the deposition of a-Ge:H at 180 °C. Even more, the synthesis of out-of-plane GeSn NWs has been demonstrated by reversing the deposition sequence of SnO₂NPs and a-Ge:H layer.

Unprecedentedly Uniform, Reliable, and Centimeter-Scale Molybdenum Disulfide Negative Differential Resistance Photodetectors

Negative differential resistance (NDR) can be applied to various devices such as reflection amplifiers, relaxation oscillators, and neuromorphic devices. However, the development of NDR photodetectors with uniformity, stability, and reproducibility for use in practical applications is still lacking. Herein, we demonstrate highly reliable NDR photodetectors by constructing a MoS₂/p-Si heterostructure. Owing to the formation of a MoS₂ layer with uniform thickness by the plasma-enhanced sulfurization process, a 100% yield with high uniformity (peak-to-valley ratio = 1.195 ± 0.065) was achieved for 120 devices. Furthermore, the proposed NDR photodetectors exhibit unprecedented high cycle-to-cycle endurance, which maintains their NDR characteristics through 100 000 consecutive sweeps without operational failure. This work paves the way for the development of a reliable NDR device and reports unprecedented results of high uniformity, reproducibility, and robustness for practical applications.

Boost of Charge Storage Performance of Graphene Nanowall Electrodes by Laser-Induced Crystallization of Metal Oxide Nanostructures

Major research efforts are being carried out for the technological advancement to an energetically sustainable society. However, for the full commercial integration of electrochemical energy storage devices, not only materials with higher performance should be designed and manufactured but also more competitive production techniques need to be developed. The laser processing technology is well extended at the industrial sector for the versatile and high throughput modification of a wide range of materials. In this work, a method based on laser processing is presented for the fabrication of hybrid electrodes composed of graphene nanowalls (GNWs) coated with different transition-metal oxide nanostructures for electrochemical capacitor (EC) applications. GNW/stainless steel electrodes grown by plasma enhanced chemical vapor deposition were decorated with metal oxide nanostructures by means of their laser surface processing while immersed in aqueous organometallic solutions. The pseudocapacitive nature of the laser-induced crystallized oxide materials prompted an increase of the GNW electrodes' capacitance by 3 orders of magnitude, up to ca. 28 F/cm³ at 10 mV/s, at both the positive and negative voltages. Finally, asymmetric aqueous and solid-state ECs revealed excellent stability upon tens of thousands of charge-discharge cycles.

Oxygen-Assisted Trimming Growth of Ultrahigh Vertical Graphene Films in a PECVD Process for Superior Energy Storage

Combining the advantages of a three-dimensional structure with intrinsic properties of graphene, vertical graphene (VG) synthesized by the plasma-enhanced chemical vapor deposition (PECVD) process has shown great promise to be applied to energy-storage electrodes. However, the practical application of the VG electrodes suffers from the limited height, which is mostly in a scale of few hundreds of nanometers, as shown in the previous studies. The reason for the unacceptable thin VG film deposition is believed to be the height saturation, stemming from the inevitable confluence of the VG flakes along with the deposition time. In this study, we developed an oxygen-assisted "trimming" process to eliminate the overfrondent graphene nanosheets thereby surmounting the saturation of the VG thickness during growth. In this approach, the height of the VGs reaches as high as 80 μm. Tested as supercapacitor electrodes, a desirable capacitance of 241.35 mF cm^-2 is obtained by the VG films, indicating the superior electrochemical properties and the potential for applications in energy storage. It is worth noting, this thickness is by no means the maximum that can be achieved with our synthesis technique and higher capacitance can be achieved by conducting the circulating deposition-correction process in our work.

Complete Atomic Oxygen and UV Protection for Polymer and Composite Materials in a Low Earth Orbit

With the realization of larger and more complex space installations, an increase in the surface area exposed to atomic oxygen (AO) and ultraviolet (UV) effects is expected, making structural integrity of space structures essential for future development. In a low Earth orbit (LEO), the effects of AO and UV degradation can have devastating consequences for polymer and composite structures in satellites and space installations. Composite materials such as carbon fiber-reinforced polymer (CFRP) or polymer materials such as polyetherimide and polystyrene are widely used in satellite construction for various applications including structural components, thermal insulation, and importantly radio frequency (RF) assemblies. In this paper, we present a multilayered material protection solution, a multilayered protection barrier, that mitigates the effects of AO and UV without disrupting the functional performance of tested assemblies. This multilayered protection barrier deposited via a custom-built plasma-enhanced chemical vapor deposition (PECVD) system is designed so as to deposit all necessary layers without breaking vacuum to maximize the adhesion to the surface of the substrate and to ensure no pinhole erosion is present. In the multilayer solution, a moisture and outgassing barrier (MOB) is coupled with an AO and UV capping layer to provide complete protection.

Single-Step Direct Growth of Graphene on Cu Ink toward Flexible Hybrid Electronic Applications by Plasma-Enhanced Chemical Vapor Deposition

Highly customized and free-formed products in flexible hybrid electronics (FHE) require direct pattern creation such as inkjet printing (IJP) to accelerate product development. In this work, we demonstrate the direct growth of graphene on Cu ink deposited on polyimide (PI) by means of plasma-enhanced chemical vapor deposition (PECVD), which provides simultaneous reduction, sintering, and passivation of the Cu ink and further reduces its resistivity. We investigate the PECVD growth conditions for optimizing the graphene quality on Cu ink and find that the defect characteristics of graphene are sensitive to the H₂/CH₄ ratio at higher total gas pressure during the growth. The morphology of Cu ink after the PECVD process and the dependence of the graphene quality on the H₂/CH₄ ratio may be attributed to the difference in the corresponding electron temperature. Therefore, this study paves a new pathway toward efficient growth of high-quality graphene on Cu ink for applications in flexible electronics and Internet of Things (IoT).

Surface-Functionalized Boron Nanoparticles with Reduced Oxide Content by Nonthermal Plasma Processing for Nanoenergetic Applications

The development of an in situ nonthermal plasma technology improved the oxidation and energy release of boron nanoparticles. We reduced the native oxide layer on the surface of boron nanoparticles (70 nm) by treatment in a nonthermal hydrogen plasma, followed by the formation of a passivation barrier by argon plasma-enhanced chemical vapor deposition (PECVD) using perfluorodecalin (C₁₀F₁₈). Both processes occur near room temperature, thus avoiding aggregation and sintering of the nanoparticles. High-resolution transmission electron microscopy (HRTEM), high-angular annular dark-field imaging (HAADF)-scanning TEM (STEM)-energy dispersive spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) demonstrated a significant reduction in surface oxide concentration due to hydrogen plasma treatment and the formation of a 2.5 nm thick passivation coating on the surface due to PECVD treatment. These results correlated with the thermal analysis results, which demonstrated a 19% increase in energy release and an increase in metallic boron content after 120 min of hydrogen plasma treatment and 15 min of PECVD of perfluorodecalin. The PECVD coating provided excellent passivation against air and humidity for 60 days. We conclude in situ nonthermal plasma reduction and passivation lead to the amelioration of energy release characteristics and the storage life of boron nanoparticles, benefits conducive for nanoenergetic applications.

Rapid Surface Modification of Ultrafiltration Membranes for Enhanced Antifouling Properties

In this work, several ultrafiltration (UF) membranes with enhanced antifouling properties were fabricated using a rapid and green surface modification method that was based on the plasma-enhanced chemical vapor deposition (PECVD). Two types of hydrophilic monomers—acrylic acid (AA) and 2-hydroxyethyl methacrylate (HEMA) were, respectively, deposited on the surface of a commercial UF membrane and the effects of plasma deposition time (i.e., 15 s, 30 s, 60 s, and 90 s) on the surface properties of the membrane were investigated. The modified membranes were then subjected to filtration using 2000 mg/L pepsin and bovine serum albumin (BSA) solutions as feed. Microscopic and spectroscopic analyses confirmed the successful deposition of AA and HEMA on the membrane surface and the decrease in water contact angle with increasing plasma deposition time strongly indicated the increase in surface hydrophilicity due to the considerable enrichment of the hydrophilic segment of AA and HEMA on the membrane surface. However, a prolonged plasma deposition time (>15 s) should be avoided as it led to the formation of a thicker coating layer that significantly reduced the membrane pure water flux with no significant change in the solute rejection rate. Upon 15-s plasma deposition, the AA-modified membrane recorded the pepsin and BSA rejections of 83.9% and 97.5%, respectively, while the HEMA-modified membrane rejected at least 98.5% for both pepsin and BSA. Compared to the control membrane, the AA-modified and HEMA-modified membranes also showed a lower degree of flux decline and better flux recovery rate (>90%), suggesting that the membrane antifouling properties were improved and most of the fouling was reversible and could be removed via simple water cleaning process. We demonstrated in this work that the PECVD technique is a promising surface modification method that could be employed to rapidly improve membrane surface hydrophilicity (15 s) for the enhanced protein purification process without using any organic solvent during the plasma modification process.

Effects of Post-Etch Microstructures on the Optical Transmittance of Silica Ridge Waveguides

Silica waveguides are often etched by reactive ion etch (RIE) processes. These processes can leave residual topography that can increase optical loss. We investigated the relation between optical loss and various RIE etch. A wet etch step meant to remove microstructures was also considered and compared. Ridge waveguides were fabricated in plasma enhanced chemical vapor deposited films by three different RIE processes, each with a different gas composition, pressure setting, and applied power setting. Half of each set of waveguides were also subjected to a hydrofluoric acid (HF) solution. The waveguides were tested for optical transmission via the cutback method. The transmission vs waveguide length measurements were plotted to fit an exponential curve and the optical loss and measurement uncertainty for each waveguide set was calculated. Clear distinctions in optical loss were found between the different RIE processes. The HF treatment also has an effect, significantly reducing optical loss for two processes and increasing it for the third. Of the tested RIE processes, one can be suggested for silica waveguides. It results in the lowest optical loss and coincidently has the fastest etch rate.

Optical emission spectroscopy of lead sulfide films plasma deposition

In-situ Optical Emission Spectroscopy (OES) combined with quantum chemical calculations was used as a powerful tool to find out the exited reactive species existing in plasma discharge during the process of lead sulfide chalcogenide materials deposition. Low temperature nonequilibrium RF (40.68 MHz) plasma at low pressure (0.1 Torr) was employed for initiation of chemical interaction between precursors in the gas phase. Only high-pure elements were utilized as the initial substances. The ration between starting materials in the gas phase and power included into the plasma discharge were the variables. The mechanism of the plasma-chemical reaction was assumed and discussed. The stoichiometry and morphology of the surface of the as-deposited materials were studied by different analytical techniques.

Microstructure and Mechanical Properties of Annealed WC/C PECVD Coatings Deposited Using Hexacarbonyl of W with Different Gases

The present work studies the tungsten carbide (WC/C) coatings deposited by using Plasma Enhanced Chemical Vapor Deposition (PECVD), with and without gases of Ar and N₂. Volatile hexacarbonyl of W was used as a precursor. Their mechanical and tribological properties were evaluated. The following values were obtained by using deposition process with N₂ of H_IT = 19.7 ± 4.1 GPa, E_IT = 221 ± 2.1 GPa, and coefficient of friction (COF) = 0.35 ± 0.09. Secondly, deposition without the aforementioned gas obtained values of H_IT = 20.9 ± 2 GPa, E_IT = 292 ± 20 GPa, and COF = 0.69 ± 0.05. WC/C coatings were annealed at temperatures of 200, 500, and 800 °C, respectively. Evaluated factors include the introduced properties, the observed morphology, and the structural composition of WC/C coatings. The process of degradation was carried out by using various velocities, depending on used gases and annealing temperatures.

Direct Exposure of Dry Enzymes to Atmospheric Pressure Non-Equilibrium Plasmas: The Case of Tyrosinase

The direct interaction of atmospheric pressure non-equilibrium plasmas with tyrosinase (Tyr) was investigated under typical conditions used in surface processing. Specifically, Tyr dry deposits were exposed to dielectric barrier discharges (DBDs) fed with helium, helium/oxygen, and helium/ethylene mixtures, and effects on enzyme functionality were evaluated. First of all, results show that DBDs have a measurable impact on Tyr only when experiments were carried out using very low enzyme amounts. An appreciable decrease in Tyr activity was observed upon exposure to oxygen-containing DBD. Nevertheless, the combined use of X-ray photoelectron spectroscopy and white-light vertical scanning interferometry revealed that, in this reactive environment, Tyr deposits displayed remarkable etching resistance, reasonably conferred by plasma-induced changes in their surface chemical composition as well as by their coffee-ring structure. Ethylene-containing DBDs were used to coat tyrosinase with a hydrocarbon polymer film, in order to obtain its immobilization. In particular, it was found that Tyr activity can be fully retained by properly adjusting thin film deposition conditions. All these findings enlighten a high stability of dry enzymes in various plasma environments and open new opportunities for the use of atmospheric pressure non-equilibrium plasmas in enzyme immobilization strategies.

PECVD of Hexamethyldisiloxane Coatings Using Extremely Asymmetric Capacitive RF Discharge

An extremely asymmetric low-pressure discharge was used to study the composition of thin films prepared by PECVD using HMDSO as a precursor. The metallic chamber was grounded, while the powered electrode was connected to an RF generator. The ratio between the surface area of the powered and grounded electrode was about 0.03. Plasma and thin films were characterised by optical spectroscopy and XPS depth profiling, respectively. Dense luminous plasma expanded about 1 cm from the powered electrode while a visually uniform diffusing plasma of low luminosity occupied the entire volume of the discharge chamber. Experiments were performed at HMDSO partial pressure of 10 Pa and various oxygen partial pressures. At low discharge power and small oxygen concentration, a rather uniform film was deposited at different treatment times up to a minute. In these conditions, the film composition depended on both parameters. At high powers and oxygen partial pressures, the films exhibited rather unusual behaviour since the depletion of carbon was observed at prolonged deposition times. The results were explained by spontaneous changing of plasma parameters, which was in turn explained by the formation of dust in the gas phase and corresponding interaction of plasma radicals with dust particles.

Amorphous Silicon Oxynitrophosphide-Coated Implants Boost Angiogenic Activity of Endothelial Cells

Lack of osteointegration is a major cause of aseptic loosening and failure of implants used in bone replacement. Implants coated with angiogenic biomaterials can improve osteointegration and potentially reduce these complications. Silicon- and phosphorus-based materials have been shown to upregulate expression of angiogenic factors and improve endothelial cell functions. In the present study, we hypothesize that implants coated with amorphous silica-based coatings in the form of silicon oxynitrophosphide (SiONP) by using plasma-enhanced chemical vapor deposition (PECVD) technique could enhance human umbilical vein endothelial cell angiogenic properties in vitro. The tested groups were: glass coverslip (GCS), tissue culture plate, SiON, SiONP1 (O: 7.3 at %), and SiONP2 (O: 14.2 at %) implants. The SiONP2 composition demonstrated 3.5-fold more fibronectin deposition than the GCS (p < 0.001). The SiONP2 group also presented a significant improvement in the capillary tubule length and thickness compared with the other groups (p < 0.01). At 24 h, we observed at least a twofold upregulation of vascular endothelial growth factor A, hypoxia-inducible factor-1α, angiopoietin-1, and nesprin-2, more evident in the SiONP1 and SiONP2 groups. In conclusion, the studied amorphous silica-coated implants, especially the SiONP2 composition, could enhance the endothelial cell angiogenic properties in vitro and may induce faster osteointegration and healing. Impact Statement In this study, we report for the first time the significant enhancement of human umbilical vein endothelial cell angiogenic properties (in vitro) by the amorphous silica-based coatings in the form of silicon oxynitrophosphide (SiONP). The SiONP2 demonstrated 3.5-fold more fibronectin deposition than the glass coverslip and presented a significant improvement in the capillary tubule length and thickness. At 24 h, SiONP reported twofold upregulation of vascular endothelial growth factor A, hypoxia-inducible factor-1α, angiopoietin-1, and nesprin-2. The studied amorphous silica-coated implants enhance the endothelial cell angiogenic properties in vitro and may induce faster osteointegration and healing.

Role of the Plasma Activation Degree on Densification of Organosilicon Films

The possibility of controlling the density of organosilicon films was investigated by tuning the plasma activation degree without providing extra energy to the structure, as usually reported in the literature. For this purpose, thin films were deposited in plasmas fed with hexamethyldisiloxane/Ar mixtures at a total pressure of 9.5 Pa. The power of the radiofrequency excitation signal, P, ranged from 50 to 300 W to alter the average energy of the plasma species while the electrical configuration was chosen to avoid direct ion bombardment of the growing films. In this way, it was possible to evaluate the effect of P on the film properties. Thickness and deposition rate were derived from profilometry data. X-ray energy dispersive and infrared spectroscopies were, respectively, applied to analyze the chemical composition and molecular structure of the layers. Surface topography and roughness were determined by atomic force microscopy while nanoindentation was used to evaluate the mechanical properties of the films. From electrochemical impedance spectroscopy the total resistance to the flow of electrolyte species was derived. The main alteration observed in the structure with changing P is related to the proportion of the methyl functional which remains connected to the Si backbone. Chain crosslinking and film density are affected by this structural modification induced by homogeneous and heterogeneous plasma reactions. The density increase resulted in a film with hardness comparable to that of the silica and more resistant to the permeation of oxidative species, but preserving the organosilicon nature of the structure.

Copper Silicide Nanowires as Hosts for Amorphous Si Deposition as a Route to Produce High Capacity Lithium-Ion Battery Anodes

Herein, copper silicide (Cu₁₅Si₄) nanowires (NWs) grown in high densities from a metallic Cu substrate are utilized as nanostructured hosts for amorphous silicon (aSi) deposition. The conductive Cu₁₅Si₄ NW scaffolds offer an increased surface area, versus planar substrates, and enable the preparation of high capacity Li-ion anodes consisting of a nanostructured active material. The formation method involves a two-step process, where Cu₁₅Si₄ nanowires are synthesized from a Cu substrate via a solvent vapor growth (SVG) approach followed by the plasma-enhanced chemical vapor deposition (PECVD) of aSi. These binder-free anodes are investigated in half-cell (versus Li-foil) and full-cell (versus LCO) configurations with discharge capacities greater than 2000 mAh/g retained after 200 cycles (half-cell) and reversible capacities of 1870 mAh/g exhibited after 100 cycles (full-cell). A noteworthy rate capability is also attained where capacities of up to 1367 mAh/g and 1520 mAh/g are exhibited at 5C in half-cell and full-cell configurations, respectively, highlighting the active material's promise for fast charging and high power applications. The anode material is characterized prior to cycling and after 1, 25, and 100 charge/discharge cycles, by scanning electron microscopy (SEM) and transmission electron microscopy (TEM), to track the effects of cycling on the material.

Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD

We investigate low-temperature (<200 °C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p-n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a better control of the doping profile. We previously demonstrated the successful growth of boron-doped epitaxial silicon layers (p+ epi-Si) at 180 °C. In this paper, we study the activation of boron during annealing via dark conductivity measurements of p+ epi-Si layers grown on silicon-on-insulator (SOI) substrates. Secondary Ion Mass Spectroscopy (SIMS) profiles of the samples, carried out to analyze the elemental composition of the p+ epi-Si layers, showed a high concentration of impurities. Finally, we have characterized the p+ epi-Si layers by low-temperature photoluminescence (PL). Results revealed the presence of a broad defect band around 0.9 eV. In addition, we observed an evolution of the PL spectrum of the sample annealed at 200 °C, suggesting that additional defects might appear upon annealing.

Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications

In this work, we grew transfer-free graphene-like thin films (GLTFs) directly on gallium nitride (GaN)/sapphire light-emitting diode (LED) substrates. Their electrical, optical and thermal properties were studied for transparent electrode applications. Ultrathin platinum (2 nm) was used as the catalyst in the plasma-enhanced chemical vapor deposition (PECVD). The growth parameters were adjusted such that the high temperature exposure of GaN wafers was reduced to its minimum (deposition temperature as low as 600 °C) to ensure the intactness of GaN epilayers. In a comparison study of the Pt-GLTF GaN LED devices and Pt-only LED devices, the former was found to be superior in most aspects, including surface sheet resistance, power consumption, and temperature distribution, but not in optical transmission. This confirmed that the as-developed GLTF-based transparent electrodes had good current spreading, current injection and thermal spreading functionalities. Most importantly, the technique presented herein does not involve any material transfer, rendering a scalable, controllable, reproducible and semiconductor industry-compatible solution for transparent electrodes in GaN-based optoelectronic devices.

Photodegradation using TiO2-activated borosilicate tubes

This study examines the photocatalytic activity of titanium dioxide (TiO₂) semiconductor supported on borosilicate tubes (cut-off 290 nm) towards removal of a mix of persistent organic pollutants (POPs) from water. For this purpose, two widely used analgesic and anti-inflammatory drugs (NSAIDs), ibuprofen (IBU) and mefenamic acid, along with MCPA sodium monohydrate, which is a common herbicide frequently used in the agricultural activities, were selected as a case study. Borosilicate tubes were coated with titanium oxide through two different approaches: sol-gel dip-coating and a hybrid nanoparticle dip-coating and plasma-enhanced chemical vapour deposition (PECVD) process. The photochemical reactor that hosts the titania-coated tubes was designed to permit continuous throughput of liquid feed stream. The photodegradation experiments were performed in laboratory conditions under artificial irradiation simulating solar light. The efficiency of direct photolysis and heterogeneous photocatalysis (TiO₂) was investigated, and the performance of each coating method was evaluated. Kinetic studies for each experiment were accomplished, the overall results showed poor efficiency and insufficient removal for NSAIDs through direct photolysis, whereas applying heterogeneous photacatalysis with TiO₂ coated on borosilicate tubes was found to accelerate their degradation rate with complete decomposition. Concomitantly, kinetic experimental results showed a critical difference of performance for the two coating methods used; in particular, the degradation rates of pollutants by the sol-gel-coated tubes were much faster than the degradation by the nanoparticle/PECVD-coated tubes. Using TiO₂ supported on borosilicate tubes appears to be a promising alternative to conventional TiO₂ suspension and avoid post-separation stages. The results achieved in this study can be used to optimise large-scale applications, and expanding the study to cover a wide range of pollutants will lead to achieve more representative results.

Improving linking interface between collagen-based hydrogels and bone-like substrates

Regenerative medicine requires the use of heterogeneous scaffolds when the tissue that needs to be repaired presents a gradient in its properties and cannot be replaced by a homogeneous graft. Then, an intimate contact between the different layers is critical to guarantee the optimal performance of the construct. This work presents a procedure that allows the immobilization of collagen-based hydrogels by self-assembly onto any desired substrate, by means of a pentafluorophenyl methacrylate (PFM) coating obtained by plasma enhanced chemical vapor deposition and a collagen monolayer. The latter is attached onto the PFM-coated substrate thanks to its high reactivity towards amines and it will act as anchoring point for the subsequent collagen fibrillation and hydrogel formation. The interaction between collagen and PFM-coated substrates has been evaluated using the quartz crystal microbalance with dissipation (QCM-D) technique. In addition, QCM-D has been used to design and monitor the collagen fibril formation process. A correlation between QCM-D data and optical microscopy has been established, and fibril formation has been confirmed by atomic force microscopy (AFM).

n-i-p Nanocrystalline Hydrogenated Silicon Solar Cells with RF-Magnetron Sputtered Absorbers

Nanocrystalline hydrogenated silicon (nc-Si:H) substrate configuration n-i-p solar cells have been fabricated on soda lime glass substrates with active absorber layers prepared by plasma enhanced chemical vapor deposition (PECVD) and radio frequency magnetron sputtering. The cells with nanocrystalline PECVD absorbers and an untextured back reflector serve as a baseline for comparison and have power conversion efficiency near 6%. By comparison, cells with sputtered absorbers achieved efficiencies of about 1%. Simulations of external quantum efficiency (EQE) are compared to experimental EQE to determine a carrier collection probability gradient with depth for the device with the sputtered i-layer absorber. This incomplete collection of carriers generated in the absorber is most pronounced in material near the n/i interface and is attributed to breaking vacuum between deposition of layers for the sputtered absorbers, possible low electronic quality of the nc-Si:H sputtered absorber, and damage at the n/i interface by over-deposition of the sputtered i-layer during device fabrication.

Preparation, Characterization, and Performance Control of Nanographitic Films

Using methane as a carbon source, low-dimensional carbon nanomaterials were obtained in this work. The films were deposited directly on glass substrates by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The configuration and compositions of this nanographite films were identified by X-ray photoelectron spectroscopy (XPS) as carbon in sp² bonding form. Raman spectral characterization verified the configuration of the films to be hexatomic ring of carbon atoms. As a result, they were found to be nanographite films (NGFs). Also, the atomic force microscopy (AFM) topography and Raman spectra of different areas demonstrated the diversity of the films at the nano scale. The high light-transmitting and electron mobility indicated that the NGFs possessed excellent optic-electronic properties and could be used as good photoelectrical function materials. Furthermore, the physical and chemical growth mechanism of NGFs were analyzed by PECVD. NGFs could be obtained in a controlled process by modulating the growth conditions. In this work, the complicated transfer process commonly used for optoelectronic devices could be avoided. Also, by growing the films directly on a glass substrate, the quality degradation of the film was not a problem. This work can further promote the development of next-generation electronic or optoelectronic function materials, especially for their application in transparent conductive electrode fields.

Transparent Electrothermal Heaters Based on Vertically-Oriented Graphene Glass Hybrid Materials

Transparent heating devices are widely used in daily life-related applications that can be achieved by various heating materials with suitable resistances. Herein, high-performance vertically-oriented graphene (VG) films are directly grown on soda-lime glass by a radio-frequency (rf) plasma-enhanced chemical vapor deposition (PECVD) method, giving reasonable resistances for electrothermal heating. The optical and electrical properties of VG films are found to be tunable by optimizing the growth parameters such as growth time, carrier gas flow, etc. The electrothermal performances of the derived materials with different resistances are thus studied systematically. Specifically, the VG film on glass with a transmittance of ~73% at 550 nm and a sheet resistance of ~3.9 KΩ/□ is fabricated into a heating device, presenting a saturated temperature up to 55 °C by applying 80 V for 3 min. The VG film on the glass at a transmittance of ~43% and a sheet resistance of 0.76 KΩ/□ exhibits a highly steady temperature increase up to ~108 °C with a maximum heating rate of ~2.6 °C/s under a voltage of 60 V. Briefly, the tunable sheet resistance, good adhesion of VG to the growth substrate, relative high heating efficiency, and large heating temperature range make VG films on glass decent candidates for electrothermal related applications in defrosting and defogging devices.

Experimental Investigation on Vertically Oriented Graphene Grown in a Plasma-Enhanced Chemical Vapor Deposition Process

Vertically oriented graphene (VG) with three-dimensional architecture has been proved to exhibit unique properties, and its particular morphology has been realized by researchers to be crucial for its performance in practical applications. In this study, we investigated the morphology evolution of VG films synthesized by the plasma-enhanced chemical vapor deposition process, including porous graphene film, graphene wall, and graphene forest. This study reveals that the morphology of VG is controlled by a combination of the deposition and etching effects and tailored by the growth conditions, such as plasma source power and growth time and temperature. The plasma source power relates to the number of branches of VG, and the growth temperature relates to the thickness of each VG flake, whereas the growth time determines the height of VG. Finally, the electrochemical properties of VG films along with morphology evolution are investigated by fabricating as VG-based supercapacitor electrodes.

Effect of coating method on the structure and properties of a novel PbO2 anode for electrochemical oxidation of Amaranth dye

This study deals with the electrochemical degradation of Amaranth in aqueous solution by means of stainless steel (SS) electrodes coated with a SiO_x interlayer deposited by Plasma Enhanced Chemical Vapour Deposition and a modified PbO₂ top layer deposited by continuous galvanostatic electrodeposition. The morphological characterization of the PbO₂ top-layer performed by Field Emission Scanning Electron Microscope put in evidence that the SiO_x, interlayer allows obtaining a more integrated PbO₂/SS electrode with a very homogeneous PbO₂ film. The composition of the lead oxide layer was investigated by X-ray Diffractometry, showing that the β-PbO₂/α-PbO₂ ratio in the top layer deposited on the SiO_x film was four times higher respect to the one deposited directly on the stainless steel surface. In addition, the electrochemical behaviour of SS/SiO_x/PbO₂ interfaces was studied by electrochemical impedance spectroscopy (EIS). The EIS results showed that the presence of SiO_x favors electron transfer within the oxide layer which improves electro-oxidation capability. Moreover, bulk electrolysis showed that over 100% colour removal and 84% COD removal, using SS/SiO_x/PbO₂ at acidic pH were reached after 300 min. High Performance Liquid Chromatography analysis was used for the quantitative determinations of initial Amaranth dye molecule removal and to evaluate its specific degradation rate. In order to evaluate the phototoxicity of treated solution with different by-products, different tests of germination were performed and proved that the electrochemical treatment with modified PbO₂ could be as an efficient technology for reducing hazardous wastewater toxicity and able to produce water available for reuse.