Dr. Probe: A software for high-resolution STEM image simulation

Measurement of Atomic Modulation Direction Using the Azimuthal Variation of First-Order Laue Zone Electron Diffraction

We show that diffraction intensity into the first-order Laue zone (FOLZ) of a crystal can have a strong azimuthal dependence, where this FOLZ ring appears solely because of unidirectional atom position modulation. Such a modulation was already known to cause the appearance of elliptical columns in atom-resolution images, but we show that measurement of the angle via four-dimensional scanning transmission electron microscopy (4DSTEM) is far more reliable and allows the measurement of the modulation direction with a precision of about 1° and an accuracy of about 3°. This method could be very powerful in characterizing atomic structures in three dimensions by 4DSTEM, especially in cases where the structure is found only in nanoscale regions or crystals.

Hollow Ptychography: Toward Simultaneous 4D Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

With the recent development of high-acquisition-speed pixelated detectors, 4D scanning transmission electron microscopy (4D-STEM) is becoming routinely available in high-resolution electron microscopy. 4D-STEM acts as a "universal" method that provides local information on materials that is challenging to extract from bulk techniques. It extends conventional STEM imaging to include super-resolution techniques and to provide quantitative phase-based information, such as differential phase contrast, ptychography, or Bloch wave phase retrieval. However, an important missing factor is the chemical and bonding information provided by electron energy loss spectroscopy (EELS). 4D-STEM and EELS cannot currently be acquired simultaneously due to the overlapping geometry of the detectors. Here, the feasibility of modifying the detector geometry to overcome this challenge for bulk specimens is demonstrated, and the use of a partial or defective detector for ptycholgaphic structural imaging is explored. Results show that structural information beyond the diffraction-limit and chemical information from the material can be extracted together, resulting in simultaneous multi-modal measurements, adding the additional dimensions of spectral information to 4D datasets.

Controllable Skyrmionic Phase Transition between Néel Skyrmions and Bloch Skyrmionic Bubbles in van der Waals Ferromagnet Fe3-δ GeTe2

The van der Waals (vdW) ferromagnet Fe3-δ GeTe2 has garnered significant research interest as a platform for skyrmionic spin configurations, that is, skyrmions and skyrmionic bubbles. However, despite extensive efforts, the origin of the Dzyaloshinskii-Moriya interaction (DMI) in Fe3-δ GeTe2 remains elusive, making it challenging to acquire these skyrmionic phases in a controlled manner. In this study, it is demonstrated that the Fe content in Fe3-δ GeTe2 has a profound effect on the crystal structure, DMI, and skyrmionic phase. For the first time, a marked increase in Fe atom displacement with decreasing Fe content is observed, transforming the original centrosymmetric crystal structure into a non-centrosymmetric symmetry, leading to a considerable DMI. Additionally, by varying the Fe content and sample thickness, a controllable transition between Néel-type skyrmions and Bloch-type skyrmionic bubbles is achieved, governed by a delicate interplay between dipole-dipole interaction and the DMI. The findings offer novel insights into the variable skyrmionic phases in Fe3-δ GeTe2 and provide the impetus for developing vdW ferromagnet-based spintronic devices.

η-Carbides (Co, Mo, or W) Nanoparticles from Octacyanometalates Precursors-Based Network

This paper describes a simple, two-steps chemical pathway to obtain bimetallic carbide nanoparticles (NPs) of general formula MxM″yC, also called η-carbides. This process allows for a control of the chemical composition of metals present in the carbides (M = Co and M″ = Mo or W). The first step involves the synthesis of a precursor consisting of a network of octacyanometalates. The second step consists in a thermal degradation of the previously obtained octacyanometalates networks under neutral atmosphere (Ar or N2 ). It is shown that this process results in the formation of carbide NPs with diameter of ≈ 5nm, and the stoichiometries Co3 M'3 C, Co6 M'6 C, Co2 M'4 C for the CsCoM' systems.

InFluence: An Open-Source Python Package to Model Images Captured with Direct Electron Detectors

The high detection efficiencies of direct electron detectors facilitate the routine collection of low fluence electron micrographs and diffraction patterns. Low dose and low fluence electron microscopy experiments are the only practical way to acquire useful data from beam sensitive pharmaceutical and biological materials. Appropriate modeling of low fluence images acquired using direct electron detectors is, therefore, paramount for quantitative analysis of the experimental images. We have developed a new open-source Python package to accurately model any single layer direct electron detector for low and high fluence imaging conditions, including a means to validate against experimental data through computation of modulation transfer function and detective quantum efficiency.

Atomic-scale polarization switching in wurtzite ferroelectrics

Ferroelectric wurtzites have the potential to revolutionize modern microelectronics because they are easily integrated with multiple mainstream semiconductor platforms. However, the electric fields required to reverse their polarization direction and unlock electronic and optical functions need substantial reduction for operational compatibility with complementary metal-oxide semiconductor (CMOS) electronics. To understand this process, we observed and quantified real-time polarization switching of a representative ferroelectric wurtzite (Al_0.94B_0.06N) at the atomic scale with scanning transmission electron microscopy. The analysis revealed a polarization reversal model in which puckered aluminum/boron nitride rings in the wurtzite basal planes gradually flatten and adopt a transient nonpolar geometry. Independent first-principles simulations reveal the details and energetics of the reversal process through an antipolar phase. This model and local mechanistic understanding are a critical initial step for property engineering efforts in this emerging material class.

Laves phase Ir2Sm intermetallic nanoparticles as a highly active electrocatalyst for acidic oxygen evolution reaction

Rare earth (RE) intermetallic nanoparticles (NPs) are significant for fundamental explorations and promising for practical applications in electrocatalysis. However, they are difficult to synthesize because of the unusually low reduction potential and extremely high oxygen affinity of RE metal-oxygen bonds. Herein, intermetallic Ir₂Sm NPs were firstly synthesized on graphene as a superior acidic oxygen evolution reaction (OER) catalyst. It was verified that intermetallic Ir₂Sm is a new phase belonging to the C15 cubic MgCu₂ type in the Laves phase family. Meanwhile, intermetallic Ir₂Sm NPs achieved a mass activity of 1.24 A mg_Ir^-1 at 1.53 V and stability of 120 h at 10 mA cm^-2 in 0.5 M H₂SO₄ electrolyte, which corresponds to a 5.6-fold and 12-fold enhancement relative to Ir NPs. Experimental results together with density functional theory (DFT) calculations show that in the structurally ordered intermetallic Ir₂Sm NPs, the alloying of Sm with Ir atoms modulates the electronic nature of Ir, thereby reducing the binding energy of the oxygen-based intermediate, resulting in faster kinetics and enhanced OER activity. This study provides a new perspective for the rational design and practical application of high-performance RE alloy catalysts.

Elucidating the role of a unique step-like interfacial structure of η4 precipitates in Al-Zn-Mg alloy

Al-Zn-Mg alloys are widely used in the transportation industry owing to their high strength-to-weight ratio. In these alloys, the main strengthening mechanism is precipitation hardening that occurs because of the formation of nano-sized precipitates. Herein, an interfacial structure of η4 precipitates, one of the main precipitates in these alloys, is revealed using aberration-corrected scanning transmission electron microscopy and first-principles calculations. These precipitates exhibit a pseudo-periodic steps and bridges. The results of this study demonstrate that the peculiar interface structure of η4/Al relieves the strain energy of η4 precipitates thus stabilizing them. The atomistic role of this interfacial structure in the nucleation and growth of the precipitates is elucidated. This study paves the way for tailoring the mechanical properties of alloys by controlling their precipitation kinetics.

Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface

Incoherent interfaces with large mismatches usually exhibit very weak interfacial interactions so that they rarely generate intriguing interfacial properties. Here we demonstrate unexpected strong interfacial interactions at the incoherent AlN/Al₂O₃ (0001) interface with a large mismatch by combining transmission electron microscopy, first-principles calculations, and cathodoluminescence spectroscopy. It is revealed that strong interfacial interactions have significantly tailored the interfacial atomic structure and electronic properties. Misfit dislocation networks and stacking faults are formed at this interface, which is rarely observed at other incoherent interfaces. The band gap of the interface reduces significantly to ~ 3.9 eV due to the competition between the elongated Al-N and Al-O bonds across the interface. Thus this incoherent interface can generate a very strong interfacial ultraviolet light emission. Our findings suggest that incoherent interfaces can exhibit strong interfacial interactions and unique interfacial properties, thereby opening an avenue for the development of related heterojunction materials and devices.

Atomic-scale observation of premelting at 2D lattice defects inside oxide crystals

Since two major criteria for melting were proposed by Lindemann and Born in the early 1900s, many simulations and observations have been carried out to elucidate the premelting phenomena largely at the crystal surfaces and grain boundaries below the bulk melting point. Although dislocations and clusters of vacancies and interstitials were predicted as possible origins to trigger the melting, experimental direct observations demonstrating the correlation of premelting with lattice defects inside a crystal remain elusive. Using atomic-column-resolved imaging with scanning transmission electron microscopy in polycrystalline BaCeO₃, here we clarify the initiation of melting at two-dimensional faults inside the crystals below the melting temperature. In particular, melting in a layer-by-layer manner rather than random nucleation at the early stage was identified as a notable finding. Emphasizing the value of direct atomistic observation, our study suggests that lattice defects inside crystals should not be overlooked as preferential nucleation sites for phase transformation including melting.

Direct Visualization of Distorted Twin Boundaries in Ce-Doped GdFeO3

Utilizing advanced transmission electron microscopy (TEM), the structure at the (110)-type twin boundary (TB) of Ce-doped GdFeO₃ (C-GFO) has been investigated with picometer precision. Such a TB is promising to generate local ferroelectricity within a paraelectric system, while precise knowledge about its structure is still largely missing. In this work, a direct measurement of the cation off-centering with respect to the neighboring oxygen is enabled by integrated differential phase contrast (iDPC) imaging, and up to 30 pm Gd off-centering is highly localized at the TB. Further electron energy loss spectroscopy (EELS) analysis demonstrates a slight accumulation of oxygen vacancies at the TB, a self-balanced behavior of Ce at the Gd sites, and a mixed occupation of Fe²⁺ and Fe³⁺ at the Fe sites. Our results provide an informative picture with atomic details at the TB of C-GFO, which is indispensable to further push the potential of grain boundary engineering.

Optimizing experimental parameters of integrated differential phase contrast (iDPC) for atomic resolution imaging

Integrated differential phase contrast scanning transmission electron microscopy (iDPC-STEM) technique has been well developed for studying atomic structures at sub-Å resolution with the capability of simultaneously imaging heavy and light atoms even at an extremely low electron dose. As a direct phase contrast imaging technique, atomic resolution iDPC-STEM is sensitive to the imaging conditions. Although great achievements have been made both in aspect of theory and experiments, the influence of experimental parameters on the contrast of atomic resolution iDPC-STEM images has not been systematically investigated. Here, we perform the iDPC-STEM simulations on the prototypical example of SrTiO₃ with respect to the routine experimental factors, including the defocus, specimen thickness, accelerating voltage, convergence angle, collection angle, sample tilt and electron dose. Through the evaluation of image contrast and atom column intensity, the parameters are discussed to improve the image contrast and the visibility of light elements. Moreover, the dose-dependent simulations demonstrate the advantage of low dose iDPC-STEM imaging over other conventional STEM modes. Our results provide a practical guideline to experimentally obtain accessible atomic resolution iDPC-STEM images.

Towards real-time STEM simulations through targeted subsampling strategies

Scanning transmission electron microscopy images can be complex to interpret on the atomic scale as the contrast is sensitive to multiple factors such as sample thickness, composition, defects and aberrations. Simulations are commonly used to validate or interpret real experimental images, but they come at a cost of either long computation times or specialist hardware such as graphics processing units. Recent works in compressive sensing for experimental STEM images have shown that it is possible to significantly reduce the amount of acquired signal and still recover the full image without significant loss of image quality, and therefore it is proposed here that similar methods can be applied to STEM simulations. In this paper, we demonstrate a method that can significantly increase the efficiency of STEM simulations through a targeted sampling strategy, along with a new approach to independently subsample each frozen phonon layer. We show the effectiveness of this method by simulating a SrTiO₃ grain boundary and monolayer 2H-MoS₂ containing a sulphur vacancy using the abTEM software. We also show how this method is not limited to only traditional multislice methods, but also increases the speed of the PRISM simulation method. Furthermore, we discuss the possibility for STEM simulations to seed the acquisition of real data, to potentially lead the way to self-driving (correcting) STEM.

Sampling theory perspective on tomographic tilt increment schemes

Given a limited radiation exposure to be distributed over a discrete number of tilted projections in tomography, the optimal collection of information depends on the tilt increment scheme. Relying on principles of sampling theory, several tilt increment schemes can be compared and quantified. Following reasoning of Saxton, a revised scheme is offered in which the tilt angle increments Δθ_n are proportional to 1/cosθ_n. The revised scheme is preferable according to matrix analysis and simulations of geometrical optics. For thin specimens, applying a cosine sampling grid similar to Hoppe's scheme can improve the results. A realistic case is examined by Dr. Probe simulation of a scanning transmission electron microscope (STEM) for an atomic model adapted from the Ferritin protein molecule. Optimal reconstruction methods that are tested include the direct algebraic method, iterative reconstruction, and a new deconvolution-based weighted back-projection, which resembles the correction filter technique in signal recovery from sub-sampled data. A non-linear correction may be accounted for by iteration of the simulation with an ad-hoc atomic model.

Piezoelectric Actuation Mechanism Involving Extrinsic Nanodomain Dynamics in Lead-Free Piezoelectrics

Piezoelectric materials play a key role in applications, while there are physically open questions. The physical origin of piezoelectricity is understood as the sum of contributions from intrinsic effects on lattice dynamics and those from extrinsic effects on ferroic-domain dynamics, but there is an incomplete understanding that all but intrinsic effects are classified as extrinsic effects. Therefore, the accurate classification of extrinsic effects is important for understanding the physical origin of piezoelectricity. In this work, high-energy synchrotron radiation X-ray diffraction is utilized to measure the response of BiFeO₃ -BaTiO₃ piezoelectrics and the intrinsic/extrinsic contribution to electric fields. It is found from crystal structure and intrinsic/extrinsic contribution, using the analysis involving structure refinement with various structural model and micromechanics-based calculations, that Bi³⁺ -ion disordering is important for realization of piezoelectricity and nanodomains. Here, an extrinsic effect on the rearrangement of nanodomains is suggested. The nanodomains, which are formed by the locally distorted structure around the A-site by Bi-ion disordering, can significantly deform the material in the BiFeO₃ -BaTiO₃ system, which contributes to the piezoelectric actuation mechanism apart from the extrinsic effect on ferroic-domain dynamics. Bi-ion disordering plays an important role in realizing piezoelectricity and nanodomains and can provide essential material design clues to develop next-generation Bi-based lead-free piezoelectric ceramics.

Tuning the 1T'/2H phases in WxMo1-xSe2 nanosheets

Controlling materials' morphology, crystal phase and chemical composition at the atomic scale has become central in materials research. Wet chemistry approaches have great potential in directing the material crystallisation process to achieve tuneable chemical compositions as well as to target specific crystal phases. Herein, we report the compositional and crystal phase tuneability achieved in the quasi-binary W_xMo_1-xSe₂ system with chemical and crystal phase mixing down to the atomic level. A series of W_xMo_1-xSe₂ solid solutions in the form of nanoflowers with atomically thin petals were obtained via a direct colloidal reaction by systematically varying the ratios of transition metal precursors. We investigate the effect of selenium precursor on the morphology of the W_xMo_1-xSe₂ material and show how using elemental selenium can enable the formation of larger and distinct nanoflowers. While the synthesised materials are compositionally homogeneous, they exhibit crystal phase heterogeneity with the co-existing domains of the 1T' and 2H crystal phases, and with evidence of MoSe₂ in the metastable 1T' phase. We show at single atom level of resolution, that tungsten and molybdenum can be found in both the 1T' and 2H lattices. The formation of heterophase 1T'/2H W_xMo_1-xSe₂ electrocatalysts allowed for a considerable improvement in the activity for the acidic hydrogen evolution reaction (HER) compared to pristine, 1T'-dominated, WSe₂. This work can pave the way towards engineered functional nanomaterials where properties, such as electronic and catalytic, have to be controlled at the atomic scale.

Dispersed surface Ru ensembles on MgO(111) for catalytic ammonia decomposition

Ammonia is regarded as an energy vector for hydrogen storage, transport and utilization, which links to usage of renewable energies. However, efficient catalysts for ammonia decomposition and their underlying mechanism yet remain obscure. Here we report that atomically-dispersed Ru atoms on MgO support on its polar (111) facets {denoted as MgO(111)} show the highest rate of ammonia decomposition, as far as we are aware, than all catalysts reported in literature due to the strong metal-support interaction and efficient surface coupling reaction. We have carefully investigated the loading effect of Ru from atomic form to cluster/nanoparticle on MgO(111). Progressive increase of surface Ru concentration, correlated with increase in specific activity per metal site, clearly indicates synergistic metal sites in close proximity, akin to those bimetallic N2 complexes in solution are required for the stepwise dehydrogenation of ammonia to N2/H2, as also supported by DFT modelling. Whereas, beyond surface doping, the specific activity drops substantially upon the formation of Ru cluster/nanoparticle, which challenges the classical view of allegorically higher activity of coordinated Ru atoms in cluster form (B5 sites) than isolated sites.

Adlayer formation on C-plane (0001) and R-plane ( 1 1 ‒ 0 2 ) Al2O3 surfaces

Adlayers on C-plane (0001) and R-plane ( 1 1 ‒ 02 ) terminated surfaces of corundum phase aluminum oxide were synthesized by annealing mixtures of two oxide powders, aluminum oxide with an additive. Using high-angle annular dark field scanning transmission electron microscopy, the adsorbed layers were characterized, and image simulations aided interpretation of the results. The adlayers were pseudomorphic, one atomic layer thick and with a fractional site occupancy. Atomic positions of the adlayer atoms relaxed and changed relative to the bulk structure, where there is evidence that the magnitude of the relaxation is sensitive to the ionic radius of the adsorbate. The pseudomorphic adlayer structure formed for different elements including, but not limited to, the lanthanides (i.e., Ge, Ba and Ln = La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm).

Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction

Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. To date, several 2D ferroelectric materials have been unveiled, among which 2D In₂Se₃ is the most promising, as all the paraelectric (β), ferroelectric (α) and antiferroelectric (β') phases are found in 2D quintuple layers. However, the large-scale synthesis of 2D In₂Se₃ films with the desired phase is still absent, and the stability for each phase remains obscure. Here we show the successful growth of centimetre-scale 2D β-In₂Se₃ film by chemical vapour deposition including distinct centimetre-scale 2D β'-In₂Se₃ film by an InSe precursor. We also demonstrate that as-grown 2D β'-In₂Se₃ films on mica substrates can be delaminated or transferred onto flexible or uneven substrates, yielding α-In₂Se₃ films through a complete phase transition. Thus, a full spectrum of paraelectric, ferroelectric and antiferroelectric 2D films can be readily obtained by means of the correlated polymorphism in 2D In₂Se₃, enabling 2D memory transistors with high electron mobility, and polarizable β'-α In₂Se₃ heterophase junctions with improved non-volatile memory performance.

Patterning the consecutive Pd3 to Pd1 on Pd2Ga surface via temperature-promoted reactive metal-support interaction

Atom-by-atom control of a catalyst surface is a central yet challenging topic in heterogeneous catalysis, which enables precisely confined adsorption and oriented approach of reactant molecules. Here, exposed surfaces with either consecutive Pd trimers (Pd₃) or isolated Pd atoms (Pd₁) are architected for Pd₂Ga intermetallic nanoparticles (NPs) using reactive metal-support interaction (RMSI). At elevated temperatures under hydrogen, in situ atomic-scale transmission electron microscopy directly visualizes the refacetting of Pd₂Ga NPs from energetically favorable (013)/(020) facets to (011)/(002). Infrared spectroscopy and acetylene hydrogenation reaction complementarily confirm the evolution from consecutive Pd₃ to Pd₁ sites of Pd₂Ga catalysts with the concurrent fingerprinting CO adsorption and featured reactivities. Through theoretical calculations and modeling, we reveal that the restructured Pd₂Ga surface results from the preferential arrangement of additionally reduced Ga atoms on the surface. Our work provides previously unidentified mechanistic insight into temperature-promoted RMSI and possible solutions to control and rearrange the surface atoms of supported intermetallic catalyst.

Machine learning in electron microscopy for advanced nanocharacterization: current developments, available tools and future outlook

In the last few years, electron microscopy has experienced a new methodological paradigm aimed to fix the bottlenecks and overcome the challenges of its analytical workflow. Machine learning and artificial intelligence are answering this call providing powerful resources towards automation, exploration, and development. In this review, we evaluate the state-of-the-art of machine learning applied to electron microscopy (and obliquely, to materials and nano-sciences). We start from the traditional imaging techniques to reach the newest higher-dimensionality ones, also covering the recent advances in spectroscopy and tomography. Additionally, the present review provides a practical guide for microscopists, and in general for material scientists, but not necessarily advanced machine learning practitioners, to straightforwardly apply the offered set of tools to their own research. To conclude, we explore the state-of-the-art of other disciplines with a broader experience in applying artificial intelligence methods to their research (e.g., high-energy physics, astronomy, Earth sciences, and even robotics, videogames, or marketing and finances), in order to narrow down the incoming future of electron microscopy, its challenges and outlook.

Controlling the Formation of Conductive Pathways in Memristive Devices

Resistive random-access memories are promising candidates for novel computer architectures such as in-memory computing, multilevel data storage, and neuromorphics. Their working principle is based on electrically stimulated materials changes that allow access to two (digital), multiple (multilevel), or quasi-continuous (analog) resistive states. However, the stochastic nature of forming and switching the conductive pathway involves complex atomistic defect configurations resulting in considerable variability. This paper reveals that the intricate interplay of 0D and 2D defects can be engineered to achieve reproducible and controlled low-voltage formation of conducting filaments. The author find that the orientation of grain boundaries in polycrystalline HfOx is directly related to the required forming voltage of the conducting filaments, unravelling a neglected origin of variability. Based on the realistic atomic structure of grain boundaries obtained from ultra-high resolution imaging combined with first-principles calculations including local strain, this paper shows how oxygen vacancy segregation energies and the associated electronic states in the vicinity of the Fermi level govern the formation of conductive pathways in memristive devices. These findings are applicable to non-amorphous valence change filamentary type memristive device. The results demonstrate that a fundamental atomistic understanding of defect chemistry is pivotal to design memristors as key element of future electronics.

Mg segregation at inclined facets of pyramidal inversion domains in GaN:Mg

Structural defects in Mg-doped GaN were analyzed using high-resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy. The defects, in the shape of inverted pyramids, appear at high concentrations of incorporated Mg, which also lead to a reduction in free-hole concentration in Mg doped GaN. Detailed analysis pinpoints the arrangement of atoms in and around the defects and verify the presence of a well-defined layer of Mg at all facets, including the inclined facets. Our observations have resulted in a model of the pyramid-shaped defect, including structural displacements and compositional replacements, which is verified by image simulations. Finally, the total concentration of Mg atoms bound to these defects were evaluated, enabling a correlation between inactive and defect-bound dopants.

Phase and polarization modulation in two-dimensional In2Se3 via in situ transmission electron microscopy

Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In₂Se₃ with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) β' phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In₂Se₃ remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In₂Se₃. We achieve reversible AFE and out-of-plane FE phase transition in 2D In₂Se₃ by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In₂Se₃ can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.

Accuracy of Local Polarization Measurements by Scanning Transmission Electron Microscopy

Accurately determining local polarization at atomic resolution can unveil the mechanisms by which static and dynamical behaviors of the polarization occur, including domain wall motion, defect interaction, and switching mechanisms, advancing us toward the better control of polarized states in materials. In this work, we explore the potential of atomic-resolution scanning transmission electron microscopy to measure the projected local polarization at the unit cell length scale. ZnO and PbMg1/3Nb2/3O3 are selected as case studies, to identify microscope parameters that can significantly affect the accuracy of the measured projected polarization vector. Different STEM imaging modalities are used to determine the location of the atomic columns, which, when combined with the Born effective charges, allows for the calculation of local polarization. Our results indicate that differentiated differential phase contrast (dDPC) imaging enhances the accuracy of measuring local polarization relative to other imaging modalities, such as annular bright-field or integrated-DPC imaging. For instance, under certain experimental conditions, the projected spontaneous polarization for ZnO can be calculated with 1.4% error from the theoretical value. Furthermore, we quantify the influence of sample thickness, probe defocus, and crystal mis-tilt on the relative errors of the calculated polarization.

Mn substitution in the topological metal Zr2Te2P

Results are reported for Mn intercalated Zr₂Te₂P, where x-ray diffraction , energy dispersive spectroscopy, and transmission electron microscopy measurements reveal that the van der Waals bonded Te-Te layers are partially filled by Zr and Mn ions. This leads to the chemical formulas Zr_0.07Zr₂Te₂P and Mn_0.06Zr_0.03Zr₂Te₂P for the parent and substituted compounds, respectively. The impact of the Mn ions is seen in the anisotropic magnetic susceptibility, where Curie-Weiss fits to the data indicate that the Mn ions are in the divalent state. Heat capacity and electrical transport measurements reveal metallic behavior, but the electronic coefficient of the heat capacity (γ_Mn≈ 36.6 mJ (mol·K²)^-1) is enhanced by comparison to that of the parent compound. Magnetic ordering is seen atTM≈4 K, where heat capacity measurements additionally show that the phase transition is broad, likely due to the disordered Mn distribution. This transition also strongly reduces the electronic scattering seen in the normalized electrical resistance. These results show that Mn substitution simultaneously introduces magnetic interactions and tunes the electronic state, which improves prospects for inducing novel behavior in Zr₂Te₂P and the broader family of ternary tetradymites.

Creating two-dimensional solid helium via diamond lattice confinement

The universe abounds with solid helium in polymorphic forms. Therefore, exploring the allotropes of helium remains vital to our understanding of nature. However, it is challenging to produce, observe and utilize solid helium on the earth because high-pressure techniques are required to solidify helium. Here we report the discovery of room-temperature two-dimensional solid helium through the diamond lattice confinement effect. Controllable ion implantation enables the self-assembly of monolayer helium atoms between {100} diamond lattice planes. Using state-of-the-art integrated differential phase contrast microscopy, we decipher the buckled tetragonal arrangement of solid helium monolayers with an anisotropic nature compressed by the robust diamond lattice. These distinctive helium monolayers, in turn, produce substantial compressive strains to the surrounded diamond lattice, resulting in a large-scale bandgap narrowing up to ~2.2 electron volts. This approach opens up new avenues for steerable manipulation of solid helium for achieving intrinsic strain doping with profound applications.

Helium is the second most abundant element in the universe, and at low temperatures it becomes a quantum crystal with exotic physical properties such as second sound, superfluidity, and giant plasticity. Here authors prepare 2D solid helium at room temperature through diamond lattice confinement.

SIM-STEM Lab: Incorporating Compressed Sensing Theory for Fast STEM Simulation

Recently it has been shown that precise dose control and an increase in the overall acquisition speed of atomic resolution scanning transmission electron microscope (STEM) images can be achieved by acquiring only a small fraction of the pixels in the image experimentally and then reconstructing the full image using an inpainting algorithm. In this paper, we apply the same inpainting approach (a form of compressed sensing) to simulated, sub-sampled atomic resolution STEM images. We find that it is possible to significantly sub-sample the area that is simulated, the number of g-vectors contributing the image, and the number of frozen phonon configurations contributing to the final image while still producing an acceptable fit to a fully sampled simulation. Here we discuss the parameters that we use and how the resulting simulations can be quantifiably compared to the full simulations. As with any Compressed Sensing methodology, care must be taken to ensure that isolated events are not excluded from the process, but the observed increase in simulation speed provides significant opportunities for real time simulations, image classification and analytics to be performed as a supplement to experiments on a microscope to be developed in the future.

Computationally Efficient Handling of Partially Coherent Electron Sources in (S)TEM Image Simulations via Matrix Diagonalization

We introduce a novel method to improve the computational efficiency for (S)TEM image simulation by employing matrix diagonalization of the mixed envelope function (MEF). The MEF is derived by taking the finite size and the energy spread of the effective electron source into account, and is a component of the transmission cross-coefficient that accounts for the correlation between partially coherent waves. Since the MEF is a four-dimensional array and its application in image calculations is time-consuming, we reduce the computation time by using its eigenvectors. By incorporating the aperture function into the matrix diagonalization, only a small number of eigenvectors are required to approximate the original matrix with high accuracy. The diagonalization enables for each eigenvector the calculation of the corresponding image by employing the coherent model. The individual images are weighted by the corresponding eigenvalues and then summed up, resulting in the total partially coherent image.

Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p-Type Dopability in AgBiSe2 -SnSe Thermoelectrics

Cation disordering is commonly found in multinary cubic compounds, but its effect on electronic properties has been neglected because of difficulties in determining the ordered structure and defect energetics. An absence of rational understanding of the point defects present has led to poor reproducibility and uncontrolled conduction type. AgBiSe₂ is a representative compound that suffers from poor reproducibility of thermoelectric properties, while the origins of its intrinsic n-type conductivity remain speculative. Here, it is demonstrated that cation disordering is facilitated by Bi_Ag charged antisite defects in cubic AgBiSe₂ which also act as a principal donor defect that greatly controls the electronic properties. Using density functional theory calculations and in situ Raman spectroscopy, how saturation annealing with selenium vapor can stabilize p-type conductivity in cubic AgBiSe₂ alloyed with SnSe at high temperatures is elucidated. With stable and controlled hole concentration, a peak is observed in the weighted mobility and the density-of-states effective mass in AgBiSnSe₃ , implying an increased valley degeneracy in this system. These findings corroborate the importance of considering the defect energetics for exploring the dopability of ternary thermoelectric chalcogenides and engineering electronic bands by controlling self-doping.

Direct Determination of Band Gap of Defects in a Wide Band Gap Semiconductor

Crystal defects play an important role in the degradation and failure of semiconductor materials and devices. Direct determination of band gap of defects is a critical step for clarifying how the defects affect the physical properties of semiconductors. Here, high-quality aluminum nitride (AlN) thin films were grown epitaxially on single-crystal Al₂O₃ substrates via pulsed laser deposition. The atomic structure and band gap of three types of inversion domain boundaries (IDBs) in AlN were determined using aberration-corrected transmission electron microscopy and atomic-resolution valence electron energy-loss spectroscopy. It was found that the band gap of all of the IDBs reduces evidently compared to that of the bulk AlN. The maximum band gap reduction of the IDBs is 1.0 eV. First-principles calculations revealed that the band gap reduction of the IDBs is mainly due to the rise of p_z orbital at the valence band maximum, which originates from the elongated Al-N bonds along the [0001] direction at the IDBs. The successful band gap determination of defects paves an avenue for quantitatively evaluating the effect of defects on the performance of semiconductor materials and devices.

Texture, Nanotexture, and Structure of Carbon Nanotube-Supported Carbon Cones

Graphene-based carbon micro-/nano-cones were prepared by depositing pyrolytic carbon onto individual carbon nanotubes as supports using a specific chemical vapor deposition process. They were investigated by means of high-resolution scanning electron microscopy, low-voltage aberration-corrected transmission electron microscopy, Raman spectroscopy, and molecular dynamics modeling. While the graphenes were confirmed to be perfect, the cone texture was determined to be preferably scroll-like, with the scroll turns being parallel to the cone axis. Correspondingly, many of the concentrically displayed graphenes (actually scroll turns) exhibit the same helicity vector. When radii of curvature are large enough, this could allow for coherent stacking to locally take place in spite of the lattice shift induced by the curvature. A particular care was taken on investigating the cone apexes, in which a specific type of graphene termination was observed, here designated as the "zip" defect. Calculations determined a plausible stable structure that such a defect type may correspond to. This defect was found to generate a very low Raman I_D/I_D' band ratio (1.5), for which physical reasons are proposed. Combining our results and that of the literature allowed proposing an identification chart for a variety of defects able to affect the graphene lattice or edges.

Quantification of Ion-Implanted Single-Atom Dopants in Monolayer MoS2 via HAADF STEM Using the TEMUL Toolkit

In recent years, atomic resolution imaging of two-dimensional (2D) materials using scanning transmission electron microscopy (STEM) has become routine. Individual dopant atoms in 2D materials can be located and identified using their contrast in annular dark-field (ADF) STEM. However, in order to understand the effect of these dopant atoms on the host material, there is now the need to locate and quantify them on a larger scale. In this work, we analyze STEM images of MoS2 monolayers that have been ion-implanted with chromium at ultra-low energies. We use functions from the open-source TEMUL Toolkit to create and refine an atomic model of an experimental image based on the positions and intensities of the atomic columns in the image. We then use the refined model to determine the likely composition of each atomic site. Surface contamination stemming from the sample preparation of 2D materials can prevent accurate quantitative identification of individual atoms. We disregard atomic sites from regions of the image with hydrocarbon surface contamination to demonstrate that images acquired using contaminated samples can give significant atom statistics from their clean regions, and can be used to calculate the retention rate of the implanted ions within the host lattice. We find that some of the implanted chromium ions have been successfully integrated into the MoS2 lattice, with 4.1% of molybdenum atoms in the transition metal sublattice replaced with chromium.

ToTEM: A software for fast TEM image simulation

ToTEM, a multislice based image simulation software is developed for transmission electron microscope (TEM). This software implements the following major features: i) capability of assigning three-dimensional potentials of atom into multiple slices and precise introduction of phase shift caused by the sub-pixel atomic position, ii) employing CUDA coding and graphical processing units (GPU) with multi-threading parallel algorithm based on the powerful batch (inverse) fast Fourier transform (FFT), which is especially beneficial for image simulation of scanning transmission electron microscopy (STEM) or (integrated) differential phase contrast (i)DPC, iii) design for efficiently generating large batch of dataset of high resolution transmission electron microscopy (HRTEM) images. Image simulation acceleration for STEM has been verified by simulating a large-scale SrTiO₃ . Additionally, iDPC image of MFI-type zeolites with xylene molecules encapsulated in straight channels demonstrates the advantage of iDPC in detecting light molecules. This article is protected by copyright. All rights reserved.

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced semiconductor materials, is essential and critical for a broad range of applications in electronics, optoelectronics, quantum photonics, and renewable energy. To date, however, it has remained challenging to achieve III-nitride heterostructures on Si with controlled lattice-polarity. Herein, we show that such critical challenges of III-nitrides on Si can be fundamentally addressed through a unique interfacial modulated lattice-polarity-controlled epitaxy (IMLPCE). It is discovered that the lattice-polarity of aluminum nitride (AlN) grown on Si(111) is primarily determined by the AlSiN interlayer: N-polar and Al-polar AlN can be achieved by suppressing and promoting the AlSiN interlayer formation, respectively. Furthermore, we develop a unique active-nitrogen-free in situ annealing process to mitigate the AlSiN layer formation at the GaN/AlN interface, which can eliminate the inverted domain formation commonly seen in N-polar GaN on AlN/Si. This study provides an alternative approach for controlling the lattice-polarity of III-nitrides on Si substrates and will enable their seamless integration with the mature Si-based device technology.

Direct Epitaxial Growth of Polar Hf0.5Zr0.5O2 Films on Corundum

Single-phase epitaxial Hf_0.5Zr_0.5O₂ films with non-centrosymmetric orthorhombic structure have been grown directly on electrode-free corundum (α-Al₂O₃) substrates by pulsed laser deposition. A combination of high-resolution X-ray diffraction and X-ray absorption spectroscopy confirms the epitaxial growth of high-quality films belonging to the Pca2₁ space group, with [111] out-of-plane orientation. The surface of a 7-nm-thick sample exhibits an atomic step-terrace structure with a corrugation of the order of one atomic layer, as proved by atomic force microscopy. Scanning transmission electron microscopy reveals that it consists of grains with around 10 nm lateral size. The polar nature of this film has been corroborated by pyroelectric measurements. These results shed light on the mechanisms of the epitaxial stabilization of the ferroelectric phase of hafnia.

Atomically sharp domain walls in an antiferromagnet

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antiferromagnetic CuMnAs in which imaging by x-ray photoemission reveals the presence of magnetic textures down to nanoscale, reaching the detection limit of this established microscopy in antiferromagnets. We achieve atomic resolution by using differential phase-contrast imaging within aberration-corrected scanning transmission electron microscopy. We identify abrupt domain walls in the antiferromagnetic film corresponding to the Néel order reversal between two neighboring atomic planes. Our work stimulates research of magnetic textures at the ultimate atomic scale and sheds light on electrical and ultrafast optical antiferromagnetic devices with magnetic field-insensitive neuromorphic functionalities.

Exploring Blob Detection to Determine Atomic Column Positions and Intensities in Time-Resolved TEM Images with Ultra-Low Signal-to-Noise

Spatially resolved in situ transmission electron microscopy (TEM), equipped with direct electron detection systems, is a suitable technique to record information about the atom-scale dynamics with millisecond temporal resolution from materials. However, characterizing dynamics or fluxional behavior requires processing short time exposure images which usually have severely degraded signal-to-noise ratios. The poor signal-to-noise associated with high temporal resolution makes it challenging to determine the position and intensity of atomic columns in materials undergoing structural dynamics. To address this challenge, we propose a noise-robust, processing approach based on blob detection, which has been previously established for identifying objects in images in the community of computer vision. In particular, a blob detection algorithm has been tailored to deal with noisy TEM image series from nanoparticle systems. In the presence of high noise content, our blob detection approach is demonstrated to outperform the results of other algorithms, enabling the determination of atomic column position and its intensity with a higher degree of precision.

Effects of Electron Microscope Parameters and Sample Thickness on High Angle Annular Dark Field Imaging

Scanning transmission electron microscopy (STEM) developed into a very important characterization tool for atomic analysis of crystalline specimens. High-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) has become one of the most powerful tools to visualize material structures at atomic resolution. However, the parameter of electron microscope and sample thickness is the important influence factors on HAADF-STEM imaging. The effect of convergence angle, spherical aberration, and defocus to HAADF imaging process has been analyzed through simulation. The applicability of two HAADF simulation software has been compared, and suggestions for their usage have been given.

ReciPro: free and open-source multipurpose crystallographic software integrating a crystal model database and viewer, diffraction and microscopy simulators, and diffraction data analysis tools

ReciPro is a comprehensive multipurpose crystallographic program equipped with an intuitive graphical user interface (GUI), and it is completely free and open source. This software has a built-in crystal database consisting of over 20 000 crystal models, and the visualization system can seamlessly display a specified crystal model as an attractive three-dimensional graphic. The comprehensive features are not confined to these crystal model databases and viewers. It can smoothly and quantitatively simulate not only single-crystal and/or polycrystalline (powder) diffraction patterns of X-ray, electron and neutron diffraction of a selected crystal model, based on the kinematic scattering theory, but also various electron diffraction patterns and high-resolution transmission electron microscopy (TEM) images, based on the dynamical scattering theory. The features of stereographic projection of crystal planes/axes to explore crystal orientation relationships and the semi-automatic diffraction spot indexing function for experimental diffraction patterns assist diffraction experiments and analyses. These features are linked through a user-friendly GUI, and the results can be synchronously displayed almost in real time. ReciPro will assist a wide range of crystallographers (including beginners) using X-ray, electron and neutron diffraction crystallography and TEM.

SEM Nano: An Electron Wave Optical Simulation for the Scanning Electron Microscope

The simulation program “SEM Nano” is introduced to explain and visualize probe formation in field-emission scanning electron microscopes (SEMs). The program offers an easy and intuitive graphical user interface (GUI) to provide input in terms of understandable SEM parameters and visualization of the output. The simulations are based on wave optics treatment of the electron beam in the SEM column. Based on input parameters provided by the user, the spatial intensity distribution of electrons is calculated at the specimen by incorporating the effects of diffraction, aberrations, coherence, and noise. Given the specimen structure signal (So), the program has the capability to produce an image of the specimen using the electron probe intensity distribution. Finally, a feature is provided to reconstruct the electron probe intensity from the noisy image using a Wiener filter-based deconvolution.

Elucidating and Mitigating High-Voltage Degradation Cascades in Cobalt-Free LiNiO2 Lithium-Ion Battery Cathodes

LiNiO₂ (LNO) is a promising cathode material for next-generation Li-ion batteries due to its exceptionally high capacity and cobalt-free composition that enables more sustainable and ethical large-scale manufacturing. However, its poor cycle life at high operating voltages over 4.1 V impedes its practical use, thus motivating efforts to elucidate and mitigate LiNiO₂ degradation mechanisms at high states of charge. Here, a multiscale exploration of high-voltage degradation cascades associated with oxygen stacking chemistry in cobalt-free LiNiO₂ , is presented. Lattice oxygen loss is found to play a critical role in the local O3-O1 stacking transition at high states of charge, which subsequently leads to Ni-ion migration and irreversible stacking faults during cycling. This undesirable atomic-scale structural evolution accelerates microscale electrochemical creep, cracking, and even bending of layers, ultimately resulting in macroscopic mechanical degradation of LNO particles. By employing a graphene-based hermetic surface coating, oxygen loss is attenuated in LNO at high states of charge, which suppresses the initiation of the degradation cascade and thus substantially improves the high-voltage capacity retention of LNO. Overall, this study provides mechanistic insight into the high-voltage degradation of LNO, which will inform ongoing efforts to employ cobalt-free cathodes in Li-ion battery technology.

Atomic Electrostatic Maps of Point Defects in MoS2

In this study, we use differential phase contrast images obtained by scanning transmission electron microscopy combined with computer simulations to map the atomic electrostatic fields of MoS₂ monolayers and investigate the effect of sulfur monovacancies and divancancies on the atomic electric field and total charge distribution. A significant redistribution of the electric field in the regions containing defects is observed, with a progressive decrease in the strength of the projected electric field for each sulfur atom removed from its position. The electric field strength at the sulfur monovacancy sites is reduced by approximately 50% and nearly vanishes at the divacancy sites, where it drops to around 15% of the original value, demonstrating the tendency of these defects to attract positively charged ions or particles. In addition, the absence of the sulfur atoms leads to an inversion in the polarity of the total charge distribution in these regions.

Anisotropic point defects in rhenium diselenide monolayers

Point defects in 1T″ anisotropic ReSe2 offer many possibilities for defect engineering, which could endow this two-dimensional semiconductor with new functionalities, but have so far received limited attention. Here, we systematically investigate a full spectrum of point defects in ReSe2, including vacancies (VSe1-4), isoelectronic substitutions (OSe1-4 and SSe1-4), and antisite defects (SeRe1-2 and ReSe1-4), by atomic-scale electron microscopy imaging and density functional theory (DFT) calculations. Statistical counting reveals a diverse density of various point defects, which are further elaborated by the formation energy calculations. Se vacancy dynamics was unraveled by in-situ electron beam irradiation. DFT calculations reveal that vacancies at Se sites notably introduce in-gap states, which are largely quenched upon isoelectronic substitutions (O and S), whereas antisite defects introduce localized magnetic moments. These results provide atomic-scale insight of atomic defects in 1T″-ReSe2, paving the way for tuning the electronic structure of anisotropic ReSe2 via defect engineering.

Structure of an Al64Cu22Co14 decagonal quasicrystal studied by Cs-corrected STEM

During the last several decades, since the discovery of a decagonal quasicrystal, a 2 nm cluster model has been widely accepted as its basic quasi-unit-cell (QUC). Instead of the traditional 2 nm QUC, a 3.2 nm QUC is proposed in this paper. The 3.2 nm QUC can fill all the blank areas. The 3.2 nm QUC consists of 251 atoms. The element type and position of each atom are determined using high-angle annular detector dark-field (HAADF) images taken along three projection directions, i.e., one along the ten-fold symmetry and the other two along the two-fold symmetry with an intersection angle of 18 degrees. The proposed model opens an avenue for further investigation of the aperiodic atomic structure of other quasicrystals.