Toward understanding the phase-selective growth mechanism of films and geometrically-shaped flakes of 2D MoTe2

Two-dimensional (2D) molybdenum ditelluride (MoTe₂) is an interesting material for fundamental study and applications, due to its ability to exist in different polymorphs of 2H, 1T, and 1T′, their phase change behavior, and unique electronic properties. Although much progress has been made in the growth of high-quality flakes and films of 2H and 1T′-MoTe₂ phases, phase-selective growth of all three phases remains a huge challenge, due to the lack of enough information on their growth mechanism. Herein, we present a novel approach to growing films and geometrical-shaped few-layer flakes of 2D 2H-, 1T-, and 1T′-MoTe₂ by atmospheric-pressure chemical vapor deposition (APCVD) and present a thorough understanding of the phase-selective growth mechanism by employing the concept of thermodynamics and chemical kinetics involved in the growth processes. Our approach involves optimization of growth parameters and understanding using thermodynamical software, HSC Chemistry. A lattice strain-mediated mechanism has been proposed to explain the phase selective growth of 2D MoTe₂, and different chemical kinetics-guided strategies have been developed to grow MoTe₂ flakes and films.

This study investigates the phase-controlled growth of flakes and films of 2D MoTe₂ by atmospheric-pressure chemical vapor deposition and presents a thorough understanding on the growth mechanism.

Status and prospects of Ohmic contacts on two-dimensional semiconductors

In recent years, two-dimensional materials have received more and more attention in the development of semiconductor devices, and their practical applications in optoelectronic devices have also developed rapidly. However, there are still some factors that limit the performance of two-dimensional semiconductor material devices, and one of the most important is Ohmic contact. Here, we elaborate on a variety of approaches to achieve Ohmic contacts on two-dimensional materials and reveal their physical mechanisms. For the work function mismatch problem, we summarize the comparison of barrier heights between different metals and 2D semiconductors. We also examine different methods to solve the problem of Fermi level pinning. For the novel 2D metal-semiconductor contact methods, we analyse their effects on reducing contact resistance from two different perspectives: homojunction and heterojunction. Finally, the challenges of 2D semiconductors in achieving Ohmic contacts are outlined.

MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T′) molybdenum ditelluride (MoTe₂). The formation of ohmic contacts increases the charge carrier mobility of MoTe₂ field-effect transistor devices to 16.1 cm² V⁻¹s⁻¹ with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.

Exploring the growth and oxidation of 2D-TaS2on Cu(111)

In this work, the growth and stability towards O₂exposure of two dimensional (2D) TaS₂on a Cu(111) substrate is investigated. Large area (∼1 cm²) crystalline 2D-TaS₂films with a metallic character are prepared on a single crystal Cu(111) substrate via a multistep approach based on physical vapor deposition. Analytical techniques such as Auger electron spectroscopy, low energy electron diffraction, and photoemission spectroscopy are used to characterize the composition, crystallinity, and electronic structure of the surface. At coverages below one monolayer equivalent (ML), misoriented TaS₂domains are formed, which are rotated up to±13orelative to the Cu(111) crystallographic directions. The TaS₂domains misorientation decreases as the film thickness approaches 1 ML, at which the crystallographic directions of TaS₂and Cu(111) are aligned. The TaS₂film is found to grow epitaxially on Cu(111). As revealed by low energy electron diffraction in conjunction with an atomic model simulation, the (3 × 3) unit cells of TaS₂match the (4 × 4) supercell of Cu(111). Furthermore, the exposure of TaS₂to O₂, does not lead to the formation of a robust tantalum oxide film, only minor amounts of stable oxides being detected on the surface. Instead, the exposure of TaS₂films to O₂leads predominantly to a reduction of the film thickness, evidenced by a decrease in the content of both Ta and S atoms of the film. This is attributed to the formation of oxide species that are unstable and mainly desorb from the surface below room temperature. Temperature programmed desorption spectroscopy confirms the formation of SO₂, which desorbs from the surface between 100 and500 K.These results provide new insights into the oxidative degradation of 2D-TaS₂on Cu(111).

Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS2 heterostructure for sensitive photodetection

Ultrathin hexagonal GaTe, with relatively high charge density, holds great potential in the field of optoelectronic devices. However, the thermodynamical stability limits it fabrications as well as applications. Here, by introducing two-dimensional MoS2 as the substrate, we successfully realized the phase-controlled synthesis of ultrathin h-GaTe, leading to high-quality h-GaTe/MoS2 heterostructures. Theoretical calculation studies reveal that GaTe with hexagonal phase is more thermodynamically stable on MoS2 templates, which can be attributed to the strain stretching and the formation energy reduction. Based on the achieved p-n heterostructures, optoelectronic devices are designed and probed, where remarkable photoresponsivity (32.5 A/W) and fast photoresponse speed (<50 μs) are obtained, indicating well-behaved photo-sensing behaviors. The study here could offer a good reference for the controlled growth of the relevant materials, and the achieved heterostructure will find promising applications in future integrated electronic and optoelectronic devices and systems.

Photocarrier Dynamics in MoTe2 Nanofilms with 2H and Distorted 1T Lattice Structures

Molybdenum telluride (MoTe₂), an emerging layered two-dimensional (2D) material, possesses excellent phase-changing properties. Previous studies revealed its reversible transition between 2H and 1T' phases with a transition energy as small as 35 meV. Since 1T'-MoTe₂ is metallic, it can serve as an electrical contact for semiconducting 2H-MoTe₂-based optoelectronic devices. Here, the photocarrier dynamics in MoTe₂ nanofilms synthesized by a one-step method and with coexisting multiple phases are investigated by transient absorption measurements. Both the energy relaxation time and the recombination lifetime of the excitons are shorter in the 1T'-MoTe₂ compared to its 2H phase. These results provide information on the different photocarrier dynamical properties of these two phases, which is important for future 2D optoelectronic and phase-change electronic devices based on MoTe₂.

A versatile sample fabrication method for ultrafast electron diffraction

Integral to the exploration of nonequilibrium phenomena in solid-state systems is the study of lattice motion after photoexcitation by a femtosecond laser pulse. For the past two decades, ultrafast electron diffraction (UED) has played a critical role in this regard. Despite remarkable progress in instrumental development, this technique is still bottlenecked by a demanding sample preparation process, where ultrathin single crystals of large lateral size are typically required. In this work, we describe an efficient, versatile method that yields high-quality, laterally extended (≥ 100 µm), and thin (≤ 50 nm) single crystals on amorphous films of Si₃N₄ windows. It applies to most exfoliable materials, including those reactive in ambient conditions, and promises clean, flat surfaces. Besides the natural extension to fabricating van der Waals heterostructures, our method can also be applied to future-generation UED that enables additional control of sample parameters, such as electrostatic gating and excitation by a locally enhanced terahertz field. Our work significantly expands the type of samples for UED studies and also finds application in other time-resolved techniques such as attosecond extreme-ultraviolet absorption spectroscopy. This method hence provides further opportunities to explore photoinduced transitions and to discover novel states of matter out of equilibrium.

Phase Engineering of Transition Metal Dichalcogenides via a Thermodynamically Designed Gas-Solid Reaction

Polymorph conversion of transition metal dichalcogenides (TMDs) offers intriguing material phenomena that can be applied for tuning the intrinsic properties of 2D materials. In general, group VIB TMDs can have thermodynamically stable 2H phases and metastable 1T/T' phases. Herein, we report key principles to apply carbon monoxide (CO)-based gas-solid reactions for a universal polymorph conversion of group VIB TMDs without forming undesirable compounds. We found that the process conditions are strongly dependent on the reaction chemical potential of cations in the TMDs, which can be predicted by thermodynamic calculations, and that polymorphic conversion is triggered by S vacancy (V_S) formation. Furthermore, we conducted DFT calculations for the reaction barriers of V_S formation and S diffusion to reveal the polymorph conversion mechanism of WS₂ and compared it with that of MoS₂. We believe that phase engineering 2D materials via thermodynamically designed gas-solid reactions could be functionally used to achieve defect-related nanomaterials.

MoTe2: Semiconductor or Semimetal?

Transition metal tellurides (TMTs) have attracted intense interest due to their intriguing physical properties arising from their diverse phase topologies. To date, a wide range of physical properties have been discovered for TMTs, including that they can act as topological insulators, semiconductors, Weyl semimetals, and superconductors. Among the TMT families, MoTe₂ is a representative material because of its Janus nature and rich phases. In this Perspective, we first introduce phase structures in monolayer and bulk MoTe₂ and then summarize MoTe₂ synthesis strategies. We highlight recent advances of Janus MoTe₂ in terms of material structures and emerging quantum states. We also provide insight into the opportunities and challenges faced by MoTe₂-associated device design and applications.

Doping-Mediated Lattice Engineering of Monolayer ReS2 for Modulating In-Plane Anisotropy of Optical and Transport Properties

ReS₂ exhibits strong anisotropic optical and electrical responses originating from the asymmetric lattice. Here, we show that the anisotropy of monolayer (1L) ReS₂ in optical scattering and electrical transport can be practically erased by lattice engineering via lithium (Li) treatment. Scanning transmission electron microscopy revealed that significant strain is induced in the lattice of Li-treated 1L-ReS₂, due to high-density electron doping and the resultant formation of continuous tiling of nanodomains with randomly rotating orientations of 60°, which produced a nearly isotropic response of polarized Raman scattering and absorption of Li-treated 1L-ReS₂. With Li treatment, the in-plane conductance of 1L-ReS₂ increased by an order of magnitude, and its angle dependence became negligible. Our result that the asymmetric phase was converted into the isotropic phase by electron injection could significantly expand the optoelectronic applications of polymorphic two-dimensional transition metal dichalcogenides.

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Molybdenum ditelluride (MoTe₂) has attracted ever-growing attention in recent years due to its novel characteristics in spintronics and phase-engineering, and an efficient and convenient method to achieve large-area high-quality film is an essential step toward electronic applications. However, the growth of large-area monolayer MoTe₂ is challenging. Here, for the first time, we achieve the growth of a centimeter-sized monoclinic MoTe₂ monolayer and manifest the mechanism of immobilized precursor particle driven growth. Microscopic characterizations reveal an obvious trend of immobilized precursor particles being consumed by the monolayer and continuing to provide a source for the growth of the monolayer. Time-of-flight secondary ion mass spectrometry verifies the attachment of hydroxide ions on the surface of the MoTe₂ monolayer, thereby realizing the inhibition of crystal growth along the [001] zone axis and the continuous growth of the MoTe₂ monolayer. The first-principles DFT calculations prove the mechanism of immobilized precursor particles and the absorption of hydroxide ions on the MoTe₂ monolayer. The as-grown MoTe₂ monolayer exhibits a surface roughness of 0.19 nm and average conductivity of 1.5 × 10^-5 S/m, which prove the smoothness and uniformity of the MoTe₂ monolayer. Temperature-dependent electrical measurements together with the transfer characteristic curves further demonstrate the typical semimetallic properties of monoclinic MoTe₂. Our research elaborates the microscopic process of immobilized precursor particles to grow large-area MoTe₂ monolayer and provides a new thinking about the growth of many other two-dimensional materials.

Direct Visualization and Manipulation of Stacking Orders in Few-Layer Graphene by Dynamic Atomic Force Microscopy

Stacking order plays a central role in governing a wide range of properties in layered two-dimensional materials. In the case of few-layer graphene, there are two common stacking configurations: ABA and ABC stacking, which have been proven to exhibit dramatically different electronic properties. However, the controllable characterization and manipulation between them remain a great challenge. Here, we report that ABA- and ABC-stacked domains can be directly visualized in phase imaging by tapping-mode atomic force microscopy with much higher spatial resolution than conventional optical spectroscopy. The contrasting phase is caused by the different energy dissipation by the tip-sample interaction. We further demonstrate controllable manipulation on the ABA/ABC domain walls by means of propagating stress transverse waves generated by the tapping of tip. Our results offer a reliable strategy for direct imaging and precise control of the atomic structures in few-layer graphene, which can be extended to other two-dimensional materials.

Grain-Boundary Engineering of Monolayer MoS2 for Energy-Efficient Lateral Synaptic Devices

Synaptic devices based on 2D-layered materials have emerged as high-efficiency electronic synapses and neurons for neuromorphic computing. Lateral 2D synaptic devices have the advantages of multiple functionalities by responding to diverse stimuli, but they consume large amounts of energy, far more than the human brain. Moreover, current lateral devices employ several mechanisms based on conductive filaments and grain boundaries (GBs), but their formation is random and difficult to control, also hindering their practical applications. Here, four-terminal, lateral synaptic devices with artificially engineered GBs are reported, which are made from monolayer MoS₂ . With lithography-free, direct-laser-writing-controlled MoS₂ /MoS_{2- x} O_δ GBs, such synaptic devices exhibit short-term and long-term plasticity characteristics that are responsive to electric and light stimulation simultaneously. This enables detailed simulations of biological learning and cognitive processes as well as image perception and processing. In particular, the device exhibits low energy consumption, similar to that of the human brain and much lower than those of other lateral 2D synaptic devices. This work provides an effective way to fabricate lateral synaptic devices for practical application development and sheds light on controllable electrical state switching for neuromorphic computing.

Defect Etching of Phase-Transition-Assisted CVD-Grown 2H-MoTe2

2D molybdenum ditelluride (MoTe₂ ) with polymorphism is a promising candidate to developing phase-change memory, high-performance transistors and spintronic devices. The phase-transition-assisted chemical vapor deposition (CVD) process has been used to prepare large-scale 2H-MoTe₂ with large grain size and low density of grain boundary. However, because of the lack of precise control of the growth condition, some defects including the amorphous regions and grain boundaries in 2H-MoTe₂ are hardly avoidable. Here, a facile method of selectively etching defects in large-scale CVD-grown 2H-MoTe₂ by triiodide ion (I₃ ^- ) solution is reported. The defect etching is attributed to the reduced lattice symmetry, high chemisorption activity and high conductivity of the defects due to the high density of Te vacancies. The treated 2H-MoTe₂ shows the suppressed hysteresis in the electrical transfer curve, enhances hole mobility and the higher effective barrier height on the metal contact, suggesting the decreased density of defects. Further chemical analysis indicates that the 2H-MoTe₂ is not damaged or doped by I₃ ^- solution during the etching process. This simple and low-cost post-processing method is effective for etching the defects in large-area 2H-MoTe₂ for high-performance device applications.

A Review on MoS2 Energy Applications: Recent Developments and Challenges

Molybdenum disulfide (MoS2) is a promising transition metal dichalcogenide (TMD) that has exceptional electronic, magnetic, optical, and mechanical properties. It can be semiconducting, superconducting, or an insulator according to its polymorph. Its bandgap structure changes from indirect to direct when moving towards its nanostructures, which opens a door to bandgap engineering for MoS2. Its supercapacitive and catalytic activity was recently noticed and studied, in order to include this material in a wide range of energy applications. In this work, we present MoS2 as a future material for energy storage and generation applications, especially solar cells, which are a cornerstone for a clean and abundant source of energy. Its role in water splitting reactions can be utilized for energy generation (hydrogen evolution) and water treatment at the same time. Although MoS2 seems to be a breakthrough in the energy field, it still faces some challenges regarding its structure stability, production scalability, and manufacturing costs.

Stabilization of Chemical-Vapor-Deposition-Grown WS2 Monolayers at Elevated Temperature with Hexagonal Boron Nitride Encapsulation

Chemical vapor deposition (CVD)-grown flakes of high-quality monolayers of WS₂ can be stabilized at elevated temperatures by encapsulation with several layer hexagonal boron nitride (h-BN), but to different degrees in the presence of ambient air, flowing N₂, and flowing forming gas (95% N₂, 5% H₂). The best passivation of WS₂ at elevated temperature occurs for h-BN-covered samples with flowing N₂ (after heating to 873 K), as judged by optical microscopy and photoluminescence (PL) intensity after a heating/cooling cycle. Stability is worse for uncovered samples, but best with flowing forming gas. PL from trions, in addition to that from excitons, is seen for covered WS₂ only for forming gas, during cooling below ∼323 K; the trion has an estimated binding energy of ∼28 meV. It might occur because of doping level changes caused by charge defect generation by H₂ molecules diffusing between the h-BN and the SiO₂/Si substrate. The decomposition of uncovered WS₂ flakes in air suggests a dissociation and chemisorption energy barrier of O₂ on the WS₂ surface of ∼1.6 eV. Fitting the high-temperature PL intensities in air gives a binding energy of a free exciton of ∼229 meV.

Ultrafast, Kinetically Limited, Ambient Synthesis of Vanadium Dioxides through Laser Direct Writing on Ultrathin Chalcogenide Matrix

Vanadium dioxide (VO₂) is a strongly correlated electronic material and has attracted significant attention due to its metal-to-insulator transition and diverse smart applications. Traditional synthesis of VO₂ usually requires minutes or hours of global heating and low oxygen partial pressure to achieve thermodynamic control of the valence state. Further patterning of VO₂ through a series of lithography and etching processes may inevitably change its surface valence, which poses a great challenge for the assembly of micro- and nanoscale VO₂-based heterojunction devices. Herein, we report an ultrafast method to simultaneously synthesize and pattern VO₂ on the time scale of seconds under ambient conditions through laser direct writing on a V₅S₈ "canvas". The successful ambient synthesis of VO₂ is attributed to the ultrafast local heating and cooling process, resulting in controlled freezing of the intermediate oxidation phase during the relatively long kinetic reaction. A Mott memristor based on a V₅S₈-VO₂-V₅S₈ lateral heterostructure can be fabricated and integrated with a MoS₂ channel, delivering a transistor with abrupt switching transfer characteristics. The other device with a VS_xO_y channel exhibits a large negative temperature coefficient of approximately 4.5%/K, which is highly desirable for microbolometers. The proposed approach enables fast and efficient integration of VO₂-based heterojunction devices and is applicable to other intriguing intermediate phases of oxides.

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition (CVD) using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V) doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re- and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2 . Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2 -based field-effect transistors have been substantially improved (from ≈10-8 to 10-5 A; ≈104 to 108 ), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.

Terahertz Driven Reversible Topological Phase Transition of Monolayer Transition Metal Dichalcogenides

This paper shows how terahertz light can drive ultrafast topological phase transitions in monolayer transition metal dichalcogenides (TMDs). The phase transition is induced by the light interaction with both electron and phonon subsystems in the material. The mechanism of such a phase transition is formulated by thermodynamics theory: the Gibbs free energy landscape can be effectively modulated under light, and the relative stability between different (meta-)stable phases can be switched. This mechanism is applied to TMDs and reversible phase transitions between the topologically trivial 2H and nontrivial 1T' phases are predicted, providing appropriate light frequency, polarization, and intensity are applied. The large energy barrier on the martensitic transformation path can be significantly reduced, yielding a small energy barrier phase transition with fast kinetics. Compared with other phase transition schemes, light illumination has great advantages, such as its non-contact nature and easy tunability. The reversible topological phase transition can be applicable in high-resolution fast data storage and in-memory computing devices.

Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis

The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS₂ have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.

Atmospheric-pressure CVD growth of two-dimensional 2H- and 1 T'-MoTe2films with high-performance SERS activity

Two-dimensional (2D) molybdenum ditelluride (MoTe₂) is a member of the transition-metal dichalcogenides family, which is an especially promising platform for surface-enhanced Raman scattering (SERS) applications, due to its excellent electronic properties. However, the synthesis of large-area highly crystalline 2D MoTe₂with controllable polymorphism is a huge challenge due to the small free energy difference (∼40 meV per unit cell) between semiconducting 2H-MoTe₂and semi-metallic 1 T'-MoTe₂. Herein, we report an optimized route for the synthesis of 2H- and 1 T'-MoTe₂films by atmospheric-pressure chemical vapor deposition. The SERS study of the as-grown MoTe₂films was carried out using methylene blue (MB) as a probe molecule. The Raman enhancement factor on 1 T'-MoTe₂was found to be three times higher than that on 2H-MoTe₂and the 1 T'-MoTe₂film is an efficient Raman-enhancing substrate that can be used to detect MB at nanomolar concentrations. Our study also imparts knowledge on the significance of a suitable combination of laser excitation wavelength and molecule-material platform for achieving ultrasensitive SERS-based chemical detection.

Semiconducting α'-boron sheet with high mobility and low all-boron contact resistance: a first-principles study

Two-dimensional field effect transistors (2D FETs) with high mobility semiconducting channels and low contact resistance between the semiconducting channel and the metallic electrodes are highly sought components of future electronics. Recently, 2D boron sheets (borophene) offer a great platform for realizing ideal 2D FETs but stable semiconducting phases still remain much unexplored. Herein, based on first-principles calculations and tight-binding model, we first clarify that α'-boron is the most stable semiconductor phase of boron sheets, while reveal the mechanism of metal-to-semiconductor transition from α- to α'-boron. Then we demonstrate that the carrier mobility in α'- and metastable β3S-boron should be very high, due to small effective masses of electrons and holes, as a good candidate material for 2D FETs. Considering further the lateral contacts between semiconducting α' and metallic borophene, we find that the α'- and β3S-boron sheet can form Ohmic contacts with selected metallic boron sheets, without Schottky barrier. The high energetic stability and excellent mobility properties of α'-boron sheet together with its good contact match to metallic borophene electrodes are promising for fully boron-based FETs in the real 2D atomically thin limit.

Artificial Neuron and Synapse Devices Based on 2D Materials

Neuromorphic systems, which emulate neural functionalities of a human brain, are considered to be an attractive next-generation computing approach, with advantages of high energy efficiency and fast computing speed. After these neuromorphic systems are proposed, it is demonstrated that artificial synapses and neurons can mimic neural functions of biological synapses and neurons. However, since the neuromorphic functionalities are highly related to the surface properties of materials, bulk material-based neuromorphic devices suffer from uncontrollable defects at surfaces and strong scattering caused by dangling bonds. Therefore, 2D materials which have dangling-bond-free surfaces and excellent crystallinity have emerged as promising candidates for neuromorphic computing hardware. First, the fundamental synaptic behavior is reviewed, such as synaptic plasticity and learning rule, and requirements of artificial synapses to emulate biological synapses. In addition, an overview of recent advances on 2D materials-based synaptic devices is summarized by categorizing these into various working principles of artificial synapses. Second, the compulsory behavior and requirements of artificial neurons such as the all-or-nothing law and refractory periods to simulate a spike neural network are described, and the implementation of 2D materials-based artificial neurons to date is reviewed. Finally, future challenges and outlooks of 2D materials-based neuromorphic devices are discussed.

Metallic Transition Metal Dichalcogenides of Group VIB: Preparation, Stabilization, and Energy Applications

Layered transition metal dichalcogenides (TMDs) of group VIB have been widely used in the realms of energy storage and conversions. Along with the existence of semiconducting states, their metallic phases have recently attracted numerous attentions owing to their fascinating physical and chemical properties. Many efforts have been devoted to obtain metallic TMDs with high purity and yield. Nevertheless, such metallic phase is thermodynamically metastable and tends to convert into semiconducting phase, which necessitates the exploration over effective strategies to ensure the stability. In this review, typical fabrication routes are introduced and those critical factors during preparation are elaborately discussed. Moreover, the stabilized strategies are summarized with concrete examples highlighting the key mechanisms toward efficient stabilization. Finally, emerging energy applications are overviewed. This review presents comprehensive research status of metallic group VIB TMDs, aiming to facilitate further scientific investigations and promote future practical applications in the fields of energy storage and conversion.

Phase Transitions and Water Splitting Applications of 2D Transition Metal Dichalcogenides and Metal Phosphorous Trichalcogenides

2D layered materials turn out to be the most attractive hotspot in materials for their unique physical and chemical properties. A special class of 2D layered material refers to materials exhibiting phase transition based on environment variables. Among these materials, transition metal dichalcogenides (TMDs) act as a promising alternative for their unique combination of atomic-scale thickness, direct bandgap, significant spin-orbit coupling and prominent electronic and mechanical properties, enabling them to be applied for fundamental studies as catalyst materials. Metal phosphorous trichalcogenides (MPTs), as another potential catalytic 2D phase transition material, have been employed for their unusual intercalation behavior and electrochemical properties, which act as a secondary electrode in lithium batteries. The preparation of 2D TMD and MPT materials has been extensively conducted by engineering their intrinsic structures at the atomic scale. In this study, advanced synthesis methods of preparing 2D TMD and MPT materials are tested, and their properties are investigated, with stress placed on their phase transition. The surge of this type of report is associated with water-splitting catalysis and other catalytic purposes. This study aims to be a guideline to explore the mentioned 2D TMD and MPT materials for their catalytic applications.

Identification of Point Defects in Atomically Thin Transition-Metal Dichalcogenide Semiconductors as Active Dopants

Selective doping in semiconductors is essential not only for monolithic integrated circuity fabrications but also for tailoring their properties including electronic, optical, and catalytic activities. Such active dopants are essentially point defects in the host lattice. In atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDCs), the roles of such point defects are particularly critical in addition to their large surface-to-volume ratio, because their bond dissociation energy is relatively weaker, compared to elemental semiconductors. In this Mini Review, we review recent advances in the identifications of diverse point defects in 2D TMDC semiconductors, as active dopants, toward the tunable doping processes, along with the doping methods and mechanisms in literature. In particular, we discuss key issues in identifying such dopants both at the atomic scales and the device scales with selective examples. Fundamental understanding of these point defects can hold promise for tunability doping of atomically thin 2D semiconductor platforms.

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal properties, which hold potential in electronic, optoelectronic, thermoelectric applications, and so forth. The field-effect transistor (FET), a semiconductor gated with at least three terminals, is pervasively exploited as the device geometry for these applications. For lack of effective and stable substitutional doping techniques, direct metal contact is often used in 2DSC FETs to inject carriers. A Schottky barrier (SB) generally exists in the metal-2DSC junction, which significantly affects and even dominates the performance of most 2DSC FETs. Therefore, low SB or Ohmic contact is highly preferred for approaching the intrinsic characteristics of the 2DSC channel. In this review, we systematically introduce the recent progress made in theoretical prediction of the SB height (SBH) in the 2DSC FETs and the efforts made both in theory and experiments to achieve low SB contacts. From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET. Finally, we conclude this review from the viewpoints of state-of-the-art electrode designs for 2DSC FETs.

Moiré Patterns in 2D Materials: A Review

Quantum materials have attracted much attention in recent years due to their exotic and incredible properties. Among them, van der Waals materials stand out due to their weak interlayer coupling, providing easy access to manipulating electrical and optical properties. Many fascinating electrical, optical, and magnetic properties have been reported in the moiré superlattices, such as unconventional superconductivity, photonic dispersion engineering, and ferromagnetism. In this review, we summarize the methods to prepare moiré superlattices in the van der Waals materials and focus on the current discoveries of moiré pattern-modified electrical properties, recent findings of atomic reconstruction, as well as some possible future directions in this field.

One-dimensional weak antilocalization effect in 1T'-MoTe2nanowires grown by chemical vapor deposition

We present a chemical vapor deposition method for the synthesizing of single-crystal 1T'-MoTe₂nanowires and the observation of one-dimensional weak antilocalization effect in 1T'-MoTe₂nanowires for the first time. The diameters of the 1T'-MoTe₂nanowires can be controlled by changing the flux of H₂/Ar carrier gas. Spherical-aberration-corrected transmission electron microscopy, selected area electron diffraction and energy dispersive x-ray spectroscopy (EDS) reveal the 1T' phase and the atomic ratio of Te/Mo closing to 2:1. The resistivity of 1T'-MoTe₂nanowires shows metallic behavior and agrees well with the Fermi liquid theory (<20 K). The coherence length extracted from 1D Hikami-Larkin-Nagaoka model with the presence of strong spin-orbit coupling is proportional toT^-0.36, indicating a Nyquist electron-electron interaction dephasing mechanism at one dimension. These results provide a feasible way to prepare one-dimensional topological materials and is promising for fundamental study of the transport properties.

Single Transition Metal Atom Bound to the Unconventional Phase of the MoS2 Monolayer for Catalytic Oxygen Reduction Reaction: A First-Principles Study

Supported single-atom catalysts (SACs) have received a lot of attention due to their super-high atom utilization and outstanding catalytic performance. However, the instability of the supported transition-metal (TM) atoms hampers their widespread applications. Exploration of an appropriate substrate to stabilize the supported single atom is crucial for the future implementation of SACs. In recent years, two-dimensional materials have been proposed as possible substrates due to their large specific surface areas, but their chemically inert surfaces are difficult to stabilize TM atoms without defecting or doping. Herein, by means of systematic first-principles calculations, we demonstrate that the defect-free MoS₂ monolayer in the unconventional phase (1T') can effectively immobilize single TM atoms owing to its unique electrophilic property as compared to the conventional 2H phase. As a prototype probe, we investigated oxygen reduction reaction (ORR) catalyzed by a total of 21 single TM atoms stabilized on 1T'-MoS₂ and successfully screened out two candidates, Cu and Pd@1T'-MoS₂, which have a low overpotential of 0.41 and 0.32 V respectively, outperforming most of the previously reported ORR catalysts. Furthermore, we reveal that the adsorption energy of the ORR intermediate, *OH, provides an excellent descriptor to assess the ORR activity, which is further determined by the d-band center of the supported TM adatoms, thus being a great advantage for future design of stable and high-performance SACs.

Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics

Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe₂) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe₂ 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe₂ single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.

Photoinduced multistage phase transitions in Ta2NiSe5

Ultrafast control of material physical properties represents a rapidly developing field in condensed matter physics. Yet, accessing the long-lived photoinduced electronic states is still in its early stages, especially with respect to an insulator to metal phase transition. Here, by combining transport measurement with ultrashort photoexcitation and coherent phonon spectroscopy, we report on photoinduced multistage phase transitions in Ta2NiSe5. Upon excitation by weak pulse intensity, the system is triggered to a short-lived state accompanied by a structural change. Further increasing the excitation intensity beyond a threshold, a photoinduced steady new state is achieved where the resistivity drops by more than four orders at temperature 50 K. This new state is thermally stable up to at least 350 K and exhibits a lattice structure different from any of the thermally accessible equilibrium states. Transmission electron microscopy reveals an in-chain Ta atom displacement in the photoinduced new structure phase. We also found that nano-sheet samples with the thickness less than the optical penetration depth are required for attaining a complete transition.

2D Homojunctions for Electronics and Optoelectronics

In the post-Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p-n homojunctions, heterophase homojunctions, and layer-engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor-phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field-effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light-emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.

Synthesis of Large-Scale Monolayer 1T'-MoTe2 and Its Stabilization via Scalable hBN Encapsulation

Out of the different structural phases of molybdenum ditelluride (MoTe2), the distorted octahedral 1T' possesses great interest for fundamental physics and is a promising candidate for the implementation of innovative devices such as topological transistors. Indeed, 1T'-MoTe2 is a semimetal with superconductivity, which has been predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. Large instability of monolayer 1T'-MoTe2 in environmental conditions, however, has made its investigation extremely challenging so far. In this work, we demonstrate homogeneous growth of large single-crystal (up to 500 μm) monolayer 1T'-MoTe2 via chemical vapor deposition (CVD) and its stabilization in air with a scalable encapsulation approach. The encapsulant is obtained by electrochemically delaminating CVD hexagonal boron nitride (hBN) from copper foil, and it is applied on the freshly grown 1T'-MoTe2 via a top-down dry lamination step. The structural and electrical properties of encapsulated 1T'-MoTe2 have been monitored over several months to assess the degree of degradation of the material. We find that when encapsulated with hBN, the lifetime of monolayer 1T'-MoTe2 successfully increases from a few minutes to more than a month. Furthermore, the encapsulated monolayer can be subjected to transfer, device processing, and heating and cooling cycles without degradation of its properties. The potential of this scalable heterostack is confirmed by the observation of signatures of low-temperature phase transition in monolayer 1T'-MoTe2 by both Raman spectroscopy and electrical measurements. The growth and encapsulation methods reported in this work can be employed for further fundamental studies of this enticing material as well as facilitate the technological development of monolayer 1T'-MoTe2.

Direct Optoelectronic Imaging of 2D Semiconductor-3D Metal Buried Interfaces

The semiconductor-metal junction is one of the most critical factors for high-performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface, which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with <20 nm resolution. To be specific, potential, conductance, and photoluminescence at the buried metal/MoS₂ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS₂ induces a large strain of ∼5% in the MoS₂ which, coupled with charge transfer, leads to degenerate doping of the MoS₂ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kΩ μm, as measured using local conductance probes. This approach was adopted to characterize MoS₂-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kΩ μm. Our results highlight that the MoS₂/metal interface is sensitive to device fabrication methods and provide a universal strategy to characterize buried contact interfaces involving 2D semiconductors.

Colloidal Nanostructures of Transition-Metal Dichalcogenides

ConspectusLayered transition-metal dichalcogenides (TMDs) are intriguing two-dimensional (2D) compounds where metal and chalcogen atoms are covalently bonded in each monolayer, and the monolayers are held together by weak van der Waals forces. Distinct from graphene, which is chemically inert, layered TMDs exhibit a wide range of electronic, optical, catalytic, and magnetic properties dependent upon their compositions, crystal structures, and thicknesses, which make them fundamentally and technologically important. TMD nanostructures are traditionally synthesized using gas-phase chemical deposition methods, which are typically limited to small-scale samples of substrate-bound planar materials. Colloidal synthesis has emerged as an alternative synthesis approach to enable the scalable synthesis of free-standing TMDs. The judicious selection of precursors, solvents, and capping ligands together with the optimization of synthesis parameters such as concentrations and temperatures leads to the fabrication of colloidal TMD nanostructures exhibiting tunable properties. In addition, understanding the formation and transformation of TMD nanostructures in solution contributes to the discovery of important structure-function relationships, which may be extendable to other anisotropic systems.In this Account, we summarize recent progress in the colloidal synthesis, characterization, and applications of TMD nanostructures with tunable compositions, structures, and thicknesses. On the basis of the preparation of Mo- and W-based disulfide, diselenide, and ditelluride nanostructures, we discuss examples of phase engineering where various metastable TMD compounds can be directly accessed at low temperatures in solution. We also analyze the chemistry involved in broadly tuning the composition across the MoSe₂-WSe₂, WS₂-WSe₂, and MoTe₂-WTe₂ solid solutions as well as atomic-level microscopic characterization and the resulting composition-tunable properties. We then highlight how the high densities of defects in the colloidally synthesized TMD nanostructures enable unique catalytic properties, including their ability to facilitate the selective hydrogenation of substituted nitroarenes using molecular hydrogen. Finally, using this library of colloidal TMD nanostructures as substrates, we discuss the pathways by which noble metals deposit onto them in solution. We highlight the importance of the relative strengths of the interfacial metal-chalcogen bonds in determining the sizes and morphologies of the deposited noble metal components. These synthesis capabilities for colloidal TMD nanostructures, which have been generalized to a library of composition-tunable phases, enable new systematic studies of structure-property relationships and chemical reactivity in this important class of 2D materials.

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2D metal 1 T'-MoTe2 and the semiconducting monolayer MoS2. We show that the van der Waals integration of the two 2D materials can efficiently address the severe Fermi pinning effect generated by conventional metals, leading to increased Schottky barrier height. Furthermore, by healing original atom-vacancies and reducing the intrinsic defect doping in MoS2, the Schottky barrier width can be effectively enlarged by 59%. The 1 T'-MoTe2/healed-MoS2 rectifier exhibits a near-unity ideality factor of ~1.6, a rectifying ratio of >5 × 105, and high external quantum efficiency exceeding 20%. Finally, we generalize the barrier optimization strategy to other Schottky junctions, defining an alternative solution to enhance the performance of 2D-material-based electronic devices.

Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition

We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe₂ Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe₂ devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe₂ devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (n_s) dependence of the conductivity σ(T, n_s) demonstrate scaling behavior consistent with a metal-insulator quantum phase transition driven by electron-electron interactions but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.

Promises and prospects of two-dimensional transistors

Two-dimensional (2D) semiconductors have attracted tremendous interest as atomically thin channels that could facilitate continued transistor scaling. However, despite many proof-of-concept demonstrations, the full potential of 2D transistors has yet to be determined. To this end, the fundamental merits and technological limits of 2D transistors need a critical assessment and objective projection. Here we review the promise and current status of 2D transistors, and emphasize that widely used device parameters (such as carrier mobility and contact resistance) could be frequently misestimated or misinterpreted, and may not be the most reliable performance metrics for benchmarking 2D transistors. We suggest that the saturation or on-state current density, especially in the short-channel limit, could provide a more reliable measure for assessing the potential of diverse 2D semiconductors, and should be applied for cross-checking different studies, especially when milestone performance metrics are claimed. We also summarize the key technical challenges in optimizing the channels, contacts, dielectrics and substrates and outline potential pathways to push the performance limit of 2D transistors. We conclude with an overview of the critical technical targets, the key technological obstacles to the 'lab-to-fab' transition and the potential opportunities arising from the use of these atomically thin semiconductors.

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices

Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which revolutionary innovations are needed to address fundamental limitations on material and working principle level. 2D semiconductors inherently holding novel properties at the atomic limit show great promise to tackle challenges imposed by traditional bulk semiconductor materials. Synergistic combination of 2D semiconductors with functional ferroelectrics further offers new working principles, and is expected to deliver massively enhanced device performance for existing complementary metal-oxide-semiconductor (CMOS) technologies and add unprecedented applications for next-generation electronics. Herein, recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed covering their working mechanisms, device construction, applications, and challenges. In particular, emerging opportunities of CMOS-process-compatible 2D semiconductor/ferroelectric transistor structure devices for the development of a rich variety of applications are discussed, including beyond-Boltzmann transistors, nonvolatile memories, neuromorphic devices, and reconfigurable nanodevices such as p-n homojunctions and self-powered photodetectors. It is concluded that 2D semiconductor/ferroelectric heterostructures, as an emergent heterogeneous platform, could drive many more exciting innovations for modern electronics, beyond the capability of ubiquitous silicon systems.

Unidirectional Alignment of AgCN Microwires on Distorted Transition Metal Dichalcogenide Crystals

Van der Waals epitaxy on the surface of two-dimensional (2D) layered crystals has gained significant research interest for the assembly of well-ordered nanostructures and fabrication of vertical heterostructures based on 2D crystals. Although van der Waals epitaxial assembly on the hexagonal phase of transition metal dichalcogenides (TMDCs) has been relatively well characterized, a comparable study on the distorted octahedral phase (1T' or T_d) of TMDCs is largely lacking. Here, we investigate the assembly behavior of one-dimensional (1D) AgCN microwires on various distorted TMDC crystals, namely 1T'-MoTe₂, T_d-WTe₂, and 1T'-ReS₂. The unidirectional alignment of AgCN chains is observed on these crystals, reflecting the symmetry of underlying distorted TMDCs. Polarized Raman spectroscopy and transmission electron microscopy directly confirm that AgCN chains display the remarkable alignment behavior along the distorted chain directions of underlying TMDCs. The observed unidirectional assembly behavior can be attributed to the favorable adsorption configurations of 1D chains along the substrate distortion, which is supported by our theoretical calculations and observation of similar assembly behavior from different cyanide chains. The aligned AgCN microwires can be harnessed as facile markers to identify polymorphs and crystal orientations of TMDCs.

Lattice-Matched Metal-Semiconductor Heterointerface in Monolayer Cu2Te

The interface between metals and semiconductors plays an essential role in two-dimensional electronic heterostructures, which has provided an alternative opportunity to realize next-generation electronic devices. Lattice-matched two-dimensional heterointerfaces have been achieved in polymorphic 2D transition-metal dichalcogenides MX₂ with M = (W, Mo) and X = (Te, Se, S) through phase engineering; yet other transition-metal chalcogenides have been rarely reported. Here we show that a single layer of hexagonal Cu₂Te crystal could be synthesized by one-step liquid-solid interface growth and exfoliation. Characterizations of atomically resolved scanning tunneling microscope reveal that the Cu₂Te monolayer consists of two lattice-matched distinct phases, similar to the 1T and 1T' phases of MX₂. The scanning tunneling spectra identify the coexistence of the metallic 1T and semiconducting 1T' phases within the chemically homogeneous Cu₂Te crystals, as confirmed by density functional theory calculations. Moreover, the two phases could form nanoscale lattice-matched metal-semiconductor junctions with atomically sharp interfaces. These results suggest a promising potential for exploiting atomic-scale electronic devices in 2D materials.

Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Atomic defects, being the most prevalent zero-dimensional topological defects, are ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be intrinsic, formed during the initial sample growth, or created by postprocessing. Despite the majority of TMDs being largely unaffected after losing chalcogen atoms in the outermost layer, a spectrum of properties, including optical, electrical, and chemical properties, can be significantly modulated, and potentially invoke applicable functionalities utilized in many applications. Hence, controlling chalcogen atomic defects provides an alternative avenue for engineering a wide range of physical and chemical properties of 2D TMDs. In this article, we review recent progress on the role of chalcogen atomic defects in engineering 2D TMDs, with a particular focus on device performance improvements. Various approaches for creating chalcogen atomic defects including nonstoichiometric synthesis and postgrowth treatment, together with their characterization and interpretation are systematically overviewed. The tailoring of optical, electrical, and magnetic properties, along with the device performance enhancement in electronic, optoelectronic, chemical sensing, biomedical, and catalytic activity are discussed in detail. Postformation dynamic evolution and repair of chalcogen atomic defects are also introduced. Finally, we offer our perspective on the challenges and opportunities in this field.

Structural Phase Transition and Interlayer Coupling in Few-Layer 1T' and Td MoTe2

We performed polarized Raman spectroscopy on mechanically exfoliated few-layer MoTe₂ samples and observed both 1T' and T_d phases at room temperature. Few-layer 1T' and T_d MoTe₂ exhibited a significant difference especially in interlayer vibration modes, from which the interlayer coupling strengths were extracted using the linear chain model: strong in-plane anisotropy was observed in both phases. Furthermore, temperature-dependent Raman measurements revealed a peculiar phase transition behavior in few-layer 1T' MoTe₂. In contrast to bulk 1T' MoTe₂ crystals, where the phase transition to the T_d phase occurs at ∼250 K, the temperature-driven phase transition to the T_d phase is increasingly suppressed as the thickness is reduced, and the transition and the critical temperature varied dramatically from sample to sample even for the same thickness. Raman spectra of intermediate phases that correspond to neither 1T' nor T_d phase with different interlayer vibration modes were observed, which suggests that several metastable phases exist with similar total energies.

Contact Engineering of Vertically Grown ReS2 with Schottky Barrier Modulation

Forming metal contact with low contact resistance is essential for the development of electronics based on layered van der Waals materials. ReS₂ is a semiconducting transition metal dichalcogenide (TMD) with an MX₂ structure similar to that of MoS₂. While most TMDs grow parallel to the substrate when synthesized using chemical vapor deposition (CVD), ReS₂ tends to orient itself vertically during growth. Such a feature drastically increases the surface area and exposes chemically active edges, making ReS₂ an attractive layered material for energy and sensor applications. However, the contact resistances of vertically grown materials are known to be relatively high, compared to those of common 2H-phase TMDs, such as MoS₂. Most reported methods for lowering the contact resistance have been focused on exfoliated 2H-phase materials with only a few devices tested, and few works on distorted T-phase materials exist. Moreover, nearly all reported studies have been conducted on only a few devices with mechanically exfoliated fl Most reported methods for lowering the contact resistance have been ₂ contacts was modulated by conformally coating a thin tunneling interlayer between the metal and the dendritic ReS₂ film. Over a hundred devices were tested, and contact resistances were extracted for large-scale statistical analysis. Importantly, we compared various known materials and techniques for lowering contact resistance and found an optimized method. Finally, the reductions in barrier height were directly correlated with exponential reductions in contact resistance and increases in drive-current by almost 2 orders of magnitude.

Semiconductor-less vertical transistor with ION/IOFF of 106

Semiconductors have long been perceived as a prerequisite for solid-state transistors. Although switching principles for nanometer-scale devices have emerged based on the deployment of two-dimensional (2D) van der Waals heterostructures, tunneling and ballistic currents through short channels are difficult to control, and semiconducting channel materials remain indispensable for practical switching. In this study, we report a semiconductor-less solid-state electronic device that exhibits an industry-applicable switching of the ballistic current. This device modulates the field emission barrier height across the graphene-hexagonal boron nitride interface with I_ON/I_OFF of 10⁶ obtained from the transfer curves and adjustable intrinsic gain up to 4, and exhibits unprecedented current stability in temperature range of 15-400 K. The vertical device operation can be optimized with the capacitive coupling in the device geometry. The semiconductor-less switching resolves the long-standing issue of temperature-dependent device performance, thereby extending the potential of 2D van der Waals devices to applications in extreme environments.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.