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Okechukwu VO, Njobeh PB, Kappo AP, Mamo MA. Room temperature detection of aspergillus flavus volatile organic compounds (VOCs) under simulated conditions using graphene oxide and tin oxide Nanorods (SnO 2 NRs-GO). Food Chem 2024; 456:140068. [PMID: 38878549 DOI: 10.1016/j.foodchem.2024.140068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 06/06/2024] [Accepted: 06/09/2024] [Indexed: 07/24/2024]
Abstract
This study investigated the application of a hybrid nanocomposite of tin oxide nanorods (SnO2 NRs) and graphene oxide (GO) for the chemoresistive detection of some volatile compounds (hexanal, benzaldehyde, octanal, 1-octanol, and ethyl acetate vapours) emitted by Aspergillus flavus under simulated conditions. The synthesised materials were characterised using various analytical techniques, including high-resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET) analysis, and Fourier transform infrared spectroscopy (FTIR). Three sensors were fabricated: individual nanomaterials (i.e., SnO2 and GO) and composites (SnO2-GO). The results showed that SnO2 NRs had limited sensitivity as a sensor, while GO-based sensors responded to various analyte vapours. However, the incorporation of SnO2 NRs into GO layers resulted in synergistic effects and improved sensor performance. The sensors' sensitivity, selectivity, recovery, and response times were quantitatively determined from the sensors' response curves. The nanocomposite sensor demonstrated superior sensitivity and selectivity for analyte vapours with acceptable response and recovery times. In addition, the sensor was insensitive to humidity and showed robust performance up to 62% RH, although sensor drift occurred at 70% RH. This study highlights the promising potential of using SnO2 NRs-GO composite-based sensor for sensitive and selective detection of analyte vapours, which has significant implications for food safety and environmental monitoring applications.
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Affiliation(s)
- Viola O Okechukwu
- Department of Biochemistry, Auckland Park Kingsway Campus, University of Johannesburg, South Africa
| | - Patrick B Njobeh
- Department of Biotechnology and Food Technology, PO Box 17011, Doornfontein Campus, University of Johannesburg, South Africa
| | - Abidemi P Kappo
- Department of Biochemistry, Auckland Park Kingsway Campus, University of Johannesburg, South Africa
| | - Messai A Mamo
- Department of Chemical Sciences, PO Box 2028, Doornfontein Campus, University of Johannesburg, South Africa.
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2
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Chang X, Zheng W, Wen S, Li C, Liu X, Zhang J. Electronic Modulation of Doped MoS 2 Nanosheets for Improved CO 2 Sensing and Capture. J Phys Chem Lett 2024:8660-8666. [PMID: 39158937 DOI: 10.1021/acs.jpclett.4c01872] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/20/2024]
Abstract
Transition-metal dichalcogenides (TMDs) are widely used in the gas sensing field, owing to their high surface-to-volume ratio enabled by the two-dimensional (2D) structure, adjustable band gap, and high electron transfer. However, it is challenging for TMD materials to realize superior CO2 sensing, due to their weak CO2 adsorption capacity. Herein, we predict through density functional theory (DFT) calculations that rare earth metal doping is an effective strategy to boost the CO2 sensing capability of TMDs. As a proof-of-concept, we investigate and find that the introduction of rare earth metal atoms (La, Ce, Pr, or Nd) can induce lattice strain and modulate the electronic properties of MoS2. When negative charges are injected in rare earth metal doped MoS2 (R-MoS2), the 5d or 4f orbital of the rare earth metal atom in R-MoS2 can produce a stronger orbital hybridization with 2p orbitals of C and O in CO2. Therefore, the CO2 adsorption is significantly enhanced and the charge transfer is facilitated for negatively charged R-MoS2. Moreover, negatively charged R-MoS2 exhibits an excellent CO2 selectivity. Our results indicate that the rare earth metal doping and electronic modulation in 2D materials may provide a new pathway for CO2 sensing and capture.
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Affiliation(s)
- Xiao Chang
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Wenyang Zheng
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Shaoting Wen
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Chang Li
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Xianghong Liu
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Jun Zhang
- College of Physics, Qingdao University, Qingdao 266071, China
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Mohammadzadeh MR, Hasani A, Hussain T, Ghanbari H, Fawzy M, Abnavi A, Ahmadi R, Kabir F, De Silva T, Rajapakse RKND, Adachi MM. Enhanced Sensitivity in Photovoltaic 2D MoS 2/Te Heterojunction VOC Sensors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402464. [PMID: 39058241 DOI: 10.1002/smll.202402464] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Revised: 07/08/2024] [Indexed: 07/28/2024]
Abstract
Volatile organic compound (VOC) sensors have a broad range of applications including healthcare monitoring, product quality control, and air quality management. However, many such applications are demanding, requiring sensors with high sensitivity and selectivity. 2D materials are extensively used in many VOC sensing devices due to their large surface-to-volume ratio and fascinating electronic properties. These properties, along with their exceptional flexibility, low power consumption, room-temperature operation, chemical functionalization potential, and defect engineering capabilities, make 2D materials ideal for high-performance VOC sensing. Here, a 2D MoS2/Te heterojunction is reported that significantly improves the VOC detection compared to MoS2 and Te sensors on their own. Density functional theory (DFT) analysis shows that the MoS2/Te heterojunction significantly enhances the adsorption energy and therefore sensing sensitivity of the sensor. The sensor response, which denotes the percentage change in the sensor's conductance upon VOC exposure, is further enhanced under photo-illumination and zero-bias conditions to values up to ≈7000% when exposed to butanone. The MoS2/Te heterojunction is therefore a promising device architecture for portable and wearable sensing applications.
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Affiliation(s)
| | - Amirhossein Hasani
- School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
- Department of Physics and MonArk NSF Quantum Foundry, Montana State University, Bozeman, MT, 59717, USA
| | - Tanveer Hussain
- School of Science and Technology, University of New England, Armidale, New South Wales, 2351, Australia
| | - Hamidreza Ghanbari
- School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
| | - Mirette Fawzy
- Department of Physics, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
| | - Amin Abnavi
- School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
| | - Ribwar Ahmadi
- School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
| | - Fahmid Kabir
- School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
| | - Thushani De Silva
- School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
| | - R K N D Rajapakse
- School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
- Faculty of Engineering, Sri Lanka Institute of Information Technology, New Kandy Road, Malabe, 10115, Sri Lanka
| | - Michael M Adachi
- School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
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Wu P, Li Y, Yang A, Tan X, Chu J, Zhang Y, Yan Y, Tang J, Yuan H, Zhang X, Xiao S. Advances in 2D Materials Based Gas Sensors for Industrial Machine Olfactory Applications. ACS Sens 2024; 9:2728-2776. [PMID: 38828988 DOI: 10.1021/acssensors.4c00431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
The escalating development and improvement of gas sensing ability in industrial equipment, or "machine olfactory", propels the evolution of gas sensors toward enhanced sensitivity, selectivity, stability, power efficiency, cost-effectiveness, and longevity. Two-dimensional (2D) materials, distinguished by their atomic-thin profile, expansive specific surface area, remarkable mechanical strength, and surface tunability, hold significant potential for addressing the intricate challenges in gas sensing. However, a comprehensive review of 2D materials-based gas sensors for specific industrial applications is absent. This review delves into the recent advances in this field and highlights the potential applications in industrial machine olfaction. The main content encompasses industrial scenario characteristics, fundamental classification, enhancement methods, underlying mechanisms, and diverse gas sensing applications. Additionally, the challenges associated with transitioning 2D material gas sensors from laboratory development to industrialization and commercialization are addressed, and future-looking viewpoints on the evolution of next-generation intelligent gas sensory systems in the industrial sector are prospected.
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Affiliation(s)
- Peng Wu
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Yi Li
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Aijun Yang
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong, No 28 XianNing West Road, Xi'an, Shanxi 710049, China
| | - Xiangyu Tan
- Electric Power Research Institute, Yunnan Power Grid Co., Ltd., Kunming, Yunnan 650217, China
| | - Jifeng Chu
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong, No 28 XianNing West Road, Xi'an, Shanxi 710049, China
| | - Yifan Zhang
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Yongxu Yan
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Ju Tang
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Hongye Yuan
- State Key Laboratory for Mechanical Behavior of Materials, Shaanxi International Research Center for Soft Matter, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shanxi 710049, China
| | - Xiaoxing Zhang
- Hubei Engineering Research Center for Safety Monitoring of New Energy and Power Grid Equipment, Hubei University of Technology, Wuhan, Hubei 430068, China
| | - Song Xiao
- State Key Laboratory of Power Grid Environmental Protection, School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China
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Jiang F, Xie W, Deng Y, Chen K, Li J, Huang XY, Yu H, Li Y, Wu L, Deng Y. Maillard Reaction Inspired Microexplosion toward Fast Synthesis of Two-Dimensional Mesoporous Tin Oxides for Efficient Chemiresistive Gas Sensing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:28928-28937. [PMID: 38795031 DOI: 10.1021/acsami.4c06072] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2024]
Abstract
Two-dimensional (2D) mesoporous transition metal oxides are highly desired in various applications, but their fast and low-cost synthesis remains a great challenge. Herein, a Maillard reaction inspired microexplosion approach is applied to rapidly synthesize ultrathin 2D mesoporous tin oxide (mSnO2). During the microexplosion between granular ammonia nitrate with melanoidin at high temperature, the organic species can be carbonized and expanded rapidly due to the instantaneous release of gases, thus producing ultrathin carbonaceous templates with rich functional groups to effectively anchor SnO2 nanoparticles on the surface. The subsequent removal of carbonaceous templates via calcination in air results in the formation of 2D mSnO2 due to the confinement effect of the templates. Pd nanoparticles are controllably deposited on the surface of 2D mSnO2 via in situ reduction, forming ultrathin 2D Pd/mSnO2 nanocomposites with thicknesses of 6-8 nm. Owing to the unique 2D mesoporous structure with rich oxygen defects and highly exposed metal-metal oxide interfaces, 2D Pd/mSnO2 exhibits excellent sensing performance toward acetone with high sensitivity, a short response time, and good selectivity under low working temperature (100 °C). This fast and convenient microexplosion synthesis strategy opens up the possibility of constructing 2D porous functional materials for various applications including high-performance gas sensors.
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Affiliation(s)
- Fengluan Jiang
- Department of Chemistry, Shanghai Stomatological Hospital & School of Stomatology, State Key Laboratory of Molecular Engineering of Polymers, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, iCHEM, Fudan University, Shanghai 200433, China
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Wenhe Xie
- Department of Chemistry, Shanghai Stomatological Hospital & School of Stomatology, State Key Laboratory of Molecular Engineering of Polymers, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, iCHEM, Fudan University, Shanghai 200433, China
| | - Yu Deng
- Department of Chemistry, Shanghai Stomatological Hospital & School of Stomatology, State Key Laboratory of Molecular Engineering of Polymers, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, iCHEM, Fudan University, Shanghai 200433, China
| | - Keyu Chen
- Department of Chemistry, Shanghai Stomatological Hospital & School of Stomatology, State Key Laboratory of Molecular Engineering of Polymers, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, iCHEM, Fudan University, Shanghai 200433, China
| | - Jichun Li
- Department of Chemistry, Shanghai Stomatological Hospital & School of Stomatology, State Key Laboratory of Molecular Engineering of Polymers, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, iCHEM, Fudan University, Shanghai 200433, China
| | - Xin-Yu Huang
- Department of Chemistry, Shanghai Stomatological Hospital & School of Stomatology, State Key Laboratory of Molecular Engineering of Polymers, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, iCHEM, Fudan University, Shanghai 200433, China
| | - Hongxiu Yu
- Department of Chemistry, Shanghai Stomatological Hospital & School of Stomatology, State Key Laboratory of Molecular Engineering of Polymers, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, iCHEM, Fudan University, Shanghai 200433, China
| | - Yaobang Li
- Zhejiang Fulai New Materials, Co. Ltd., Jiaxing, Zhejiang Province 314103, China
| | - Limin Wu
- Institute of Energy and Materials Chemistry, Inner Mongolia University, Hohhot 010021, China
| | - Yonghui Deng
- Department of Chemistry, Shanghai Stomatological Hospital & School of Stomatology, State Key Laboratory of Molecular Engineering of Polymers, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, iCHEM, Fudan University, Shanghai 200433, China
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Patel RP, Shah PV, Siraj S, Sahatiya P, Pataniya PM, Sumesh CK. Fabrication of a wearable and foldable photodetector based on a WSe 2-MXene 2D-2D heterostructure using a scalable handprint technique. NANOSCALE 2024; 16:10011-10029. [PMID: 38700054 DOI: 10.1039/d4nr00615a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
Several studies on semiconductor material-based single-band, high-performance photosensitive, and chemically stable photodetectors are available; however, the lack of broad spectral response, device flexibility, and biodegradability prevents them from being used in wearable and flexible electronics. Apart from that, the selection of the device fabrication technique is a very crucial factor nowadays in terms of equipment utilization and environmental friendliness. This report presents a study demonstrating a straightforward solvent- and equipment-free handprint technique for the fabrication of WSe2-Ti3C2TX flexible, biodegradable, robust, and broadband (Vis-NIR) photodetectors. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX), UV-visible spectroscopy, and X-ray photoelectron spectroscopy (XPS) confirm the formation of a WSe2-Ti3C2TX film. The WSe2-Ti3C2TX van der Waals heterostructure plays a key role in enhancing the optoelectrical properties. The as-prepared photodetector exhibits efficient broadband response with a photoresponsivity and a detectivity of 0.3 mA W-1 and 6.8 × 1010 Jones, respectively, under NIR (780 nm) irradiation (1.0 V bias). Under various pressure and temperature conditions, the device's flexibility and durability were tested. The biodegradable photodetector prepared through the solvent- and equipment-free handprint technique has the potential to attract significant interest in wearable and flexible electronics in the future.
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Affiliation(s)
- Rahul P Patel
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
| | - Parth V Shah
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
| | - Sohel Siraj
- Department of Electrical and Electronic Engineering, BITS Pilani Hyderabad, Secunderabad-500078, India
| | - Parikshit Sahatiya
- Department of Electrical and Electronic Engineering, BITS Pilani Hyderabad, Secunderabad-500078, India
| | - Pratik M Pataniya
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
| | - C K Sumesh
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
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7
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Xie Y, Zhang Z, Meng F, Huo S, Hu X, Niu P, Wu E. Anisotropic sensing based on single ReS 2flake for VOCs discrimination. NANOTECHNOLOGY 2024; 35:305203. [PMID: 38651768 DOI: 10.1088/1361-6528/ad41da] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 04/08/2024] [Indexed: 04/25/2024]
Abstract
Selective and sensitive detection of volatile organic compounds (VOCs) holds paramount importance in real-world applications. This study proposes an innovative approach utilizing a single ReS2field-effect transistor (FET) characterized by distinct in-plane anisotropy, specifically tailored for VOC recognition. The unique responses of ReS2, endowed with robust in-plane anisotropic properties, demonstrate significant difference along thea-axis andb-axis directions when exposed to four kinds of VOCs: acetone, methanol, ethanol, and IPA. Remarkably, the responses of ReS2were significantly magnified under ultraviolet (UV) illumination, particularly in the case of acetone, where the response amplified by 10-15 times and the detection limit decreasing from 70 to 4 ppm compared to the dark conditions. Exploiting the discernible variances in responses along thea-axis andb-axis under both UV and dark conditions, the data points of acetone, ethanol, methanol and IPA gases were clearly separated in the principal component space without any overlap through principal component analysis, indicating that the single ReS2FET has a high ability to distinguish various gas species. The exploration of anisotropic sensing materials and light excitation strategies can be applied to a broad range of sensing platforms based on two-dimensional materials for practical applications.
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Affiliation(s)
- Yuan Xie
- School of Electronics and Information Engineering, Tiangong University, No. 399 BinShuiXi Road, Tianjin, 300387, People's Republic of China
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Zhe Zhang
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Fanying Meng
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Shida Huo
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Xiaodong Hu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Pingjuan Niu
- School of Electronics and Information Engineering, Tiangong University, No. 399 BinShuiXi Road, Tianjin, 300387, People's Republic of China
| | - Enxiu Wu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
- State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem And Information Technology, No. 865 Changning Road, Shanghai, 200050, People's Republic of China
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Kumar S, Kumar A, Kumar A, Chakkar AG, Betal A, Kumar P, Sahu S, Kumar M. Catalytic synergy of WS 2-anchored PdSe 2 for highly sensitive hydrogen gas sensor. NANOSCALE 2024. [PMID: 38682669 DOI: 10.1039/d4nr00342j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/01/2024]
Abstract
Hydrogen (H2) is widely used in industrial processes and is one of the well-known choices for storage of renewable energy. H2 detection has become crucial for safety in manufacturing, storage, and transportation due to its strong explosivity. To overcome the issue of explosion, there is a need for highly selective and sensitive H2 sensors that can function at low temperatures. In this research, we have adequately fabricated an unreported van der Waals (vdWs) PdSe2/WS2 heterostructure, which exhibits exceptional properties as a H2 sensor. The formation of these heterostructure devices involves the direct selenization process using chemical vapor deposition (CVD) of Pd films that have been deposited on the substrate of SiO2/Si by DC sputtering, followed by drop casting of WS2 nanoparticles prepared by a hydrothermal method onto device substrates including pre-patterned electrodes. The confirmation of the heterostructure has been done through the utilization of powder X-ray diffraction (XRD), depth-dependent X-ray photoelectron spectroscopy (XPS) and field-emission scanning electron microscopy (FE-SEM) techniques. Also, the average roughness of thin films is decided by Atomic Force Microscopy (AFM). The comprehensive research shows that the PdSe2/WS2 heterostructure-based sensor produces a response that is equivalent to 67.4% towards 50 ppm H2 at 100 °C. The response could be a result of the heterostructure effect and the superior selectivity for H2 gas in contrast to other gases, including NO2, CH4, CO and CO2, suggesting tremendous potential for H2 detection. Significantly, the sensor exhibits fast response and a recovery time of 31.5 s and 136.6 s, respectively. Moreover, the explanation of the improvement in gas sensitivity was suggested by exploiting the energy band positioning of the PdSe2/WS2 heterostructure, along with a detailed study of variations in the surface potential. This study has the potential to provide a road map for the advancement of gas sensors utilizing two-dimensional (2D) vdWs heterostructures, which exhibit superior performance at low temperatures.
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Affiliation(s)
- Suresh Kumar
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
| | - Ashok Kumar
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
| | - Amit Kumar
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
| | - Atul G Chakkar
- School of Physical Sciences, Indian Institute of Technology Mandi, Mandi 175005, India
| | - Atanu Betal
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
| | - Pradeep Kumar
- School of Physical Sciences, Indian Institute of Technology Mandi, Mandi 175005, India
| | - Satyajit Sahu
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
| | - Mahesh Kumar
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
- Department of Cybernetics, Nanotechnology and Data Processing, Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Akademicka 16, 44-100 Gliwice, Poland
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9
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Pawar KK, Kumar A, Mirzaei A, Kumar M, Kim HW, Kim SS. 2D nanomaterials for realization of flexible and wearable gas sensors: A review. CHEMOSPHERE 2024; 352:141234. [PMID: 38278446 DOI: 10.1016/j.chemosphere.2024.141234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 01/03/2024] [Accepted: 01/14/2024] [Indexed: 01/28/2024]
Abstract
Gas sensors are extensively employed for monitoring and detection of hazardous gases and vapors. Many of them are produced on rigid substrates, but flexible and wearable gas sensors are needed for intriguing usage including the internet of things (IoT) and medical devices. The materials with the greatest potential for the fabrication of flexible and wearable gas sensing devices are two-dimensional (2D) semiconducting nanomaterials, which consist of graphene and its substitutes, transition metal dichalcogenides, and MXenes. These types of materials have good mechanical flexibility, high charge carrier mobility, a large area of surface, an abundance of defects and dangling bonds, and, in certain instances adequate transparency and ease of synthesis. In this review, we have addressed the different 2D nonmaterial properties for gas sensing in the context of fabrication of flexible/wearable gas sensors. We have discussed the sensing performance of flexible/wearable gas sensors in various forms such as pristine, composite and noble metal decorated. We believe that content of this review paper is greatly useful for the researchers working in the research area of fabrication of flexible/wearable gas sensors.
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Affiliation(s)
- Krishna Kiran Pawar
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, South Korea; The Research Institute of Industrial Science, Hanyang University, Seoul, 04763, South Korea; School of Nanoscience and Technology, Shivaji University, Kolhapur, 416004, India
| | - Ashok Kumar
- Department of Electrical Engineering, Indian Institute of Technology, Jodhpur, 342030, India
| | - Ali Mirzaei
- Department of Materials Science and Engineering, Shiraz University of Technology, Shiraz, 715557-13876, Iran
| | - Mahesh Kumar
- Department of Electrical Engineering, Indian Institute of Technology, Jodhpur, 342030, India; Department of Cybernetics, Nanotechnology and Data Processing, Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Akademicka 16, 44-100, Gliwice, Poland
| | - Hyoun Woo Kim
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, South Korea.
| | - Sang Sub Kim
- Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea.
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10
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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11
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Alharbi SAR, Yu M. Crucial role of interfacial interaction in 2D polar SiGe/GeC heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:215301. [PMID: 38364275 DOI: 10.1088/1361-648x/ad2a0a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Accepted: 02/16/2024] [Indexed: 02/18/2024]
Abstract
The planar charge transfer is a distinctive characteristic of the two-dimensional (2D) polar materials. When such 2D polar materials are involved in vertical heterostructures (VHs), in addition to the van der Waals (vdW) interlayer interaction, the interfacial interaction triggered by the in-plane charge transfer will play a crucial role. To deeply understand such mechanism, we conducted a comprehensive theoretical study focusing on the structural stability and electronic properties of 2D polar VHs built by commensurate SiGe/GeC bilayers with four species ordering patterns (classified as a C-group with patterns I and II and a Ge-group with patterns III and IV, respectively). It was found that the commensurate SiGe/GeC VHs are mainly stabilized by interfacial interactions (including the electrostatic interlayer bonding, the vdW force, as well as thesp2/sp3orbital hybridization), with the Ge-group being the most energetically favorable than the C-group. A net charge redistribution occurs between adjacent layers, which is significant (∼0.23-0.25 e cell-1) in patterns II and IV, but slightly small (∼0.05-0.09 e cell-1) in patterns I and III, respectively, forming spontaneousp-nheterojunctions. Such interlayer charge transfer could also lead to a polarization in the interfacial region, with the electron depletion (accumulation) close to the GeC layer and the electron accumulation (depletion) close to the SiGe layer in the C-group (the Ge-group). This type of interface dipoles could induce a built-in electric field and help to promote photogenerated electrons (holes) migration. Furthermore, a semi-metal nature with a tiny direct band gap at the SiGe layer and a semiconducting nature at the GeC layer indicate that the commensurate SiG/GeC VHs possess a type-I band alignment of heterojunction and have a wide spectrum of light absorption capabilities, indicating its promising applications for enhancing light-matter interaction and interfacial engineering.
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Affiliation(s)
- Safia Abdullah R Alharbi
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
- Department of Physics, College of Sciences, Al Imam Mohammad Ibn Saud Islamic University (IMISU), Riyadh 11623, Saudi Arabia
| | - Ming Yu
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
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12
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Hoat DM, Van On V, Van Huan P, Guerrero-Sanchez J. Realizing new 2D spintronic materials from the non-magnetic 1T-PdO 2 monolayer through vacancy defects and doping. RSC Adv 2024; 14:7241-7250. [PMID: 38419674 PMCID: PMC10901215 DOI: 10.1039/d3ra08866a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 02/12/2024] [Indexed: 03/02/2024] Open
Abstract
In this work, vacancy- and doping-based magnetism engineering in a non-magnetic 1T-PdO2 monolayer is explored in order to realize new two-dimensional (2D) spintronic materials. The pristine monolayer is an indirect gap semiconductor with a band gap of 1.45 (3.20) eV obtained using the PBE (HSE06) functional. Half-metallicity with a total magnetic moment of 3.95 μB is induced by creating a single Pd vacancy, where the magnetic properties are produced mainly by O atoms around the vacancy site. In contrast, the non-magnetic nature is preserved under the effects of a single O vacancy, however a band gap reduction in the order of 37.93% is achieved. Further doping with transition metals (TMs = V, Cr, Mn, and Fe) in the Pd sublattice and with non-metals (B, C, N, and F) in the O sublattice is investigated. TM impurities lead to the emergence of a diluted magnetic semiconductor nature, where total magnetic moments of 1.00, 2.00, and 3.00 μB are obtained in the V-, Cr(Fe)-, and Mn-doped systems, respectively. In these cases, the TMs' 3d electrons mainly originate the system's magnetism. Significant magnetization of the PdO2 monolayer is also achieved by doping with B, N, and F atoms, where either half-metallic or diluted magnetic semiconductor natures are induced. Herein, electronic and magnetic properties are regulated mainly by the interactions between the 2p orbital of the dopant, 4d orbital of the first neighbor Pd atoms, and 2p orbital of the second neighbor O atoms. Meanwhile, C impurity induces no magnetism in the PdO2 monolayer because of the strong electronic hybridization with their neighbor atoms. Results presented herein may introduce efficient approaches to engineer magnetism in a non-magnetic PdO2 monolayer, such that the functionalized systems are further recommended for prospective spintronic applications.
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Affiliation(s)
- D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Vo Van On
- Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University Binh Duong Province Vietnam
| | - Phan Van Huan
- Faculty of Basic Science, Binh Duong University, Binh Duong Province Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico
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13
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Liang Z, Wang M, Zhang X, Li Z, Du K, Yang J, Lei SY, Qiao G, Ou JZ, Liu G. A 2D-0D-2D Sandwich Heterostructure toward High-Performance Room-Temperature Gas Sensing. ACS NANO 2024; 18:3669-3680. [PMID: 38241472 DOI: 10.1021/acsnano.3c11475] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
The construction of two-dimensional (2D) van der Waals (vdW) heterostructures over black phosphorus (BP) has been attracting significant attention to better utilize its inherent properties. The sandwich of zero-dimensional (0D) noble metals within BP-based vdW heterostructures can provide efficient catalytic channels, modulating their surface redox potentials and therefore inducing versatile functionalities. Herein, we realize a 2D WS2-Au-BP heterostructure, in which Au nanoparticles are connected between BP and WS2 via ionic bonds. The ultralow conduction band minimum position, the reduced adsorption energies of O2, and the increased dissociation barrier energy of O2- into 2O contribute greatly to improving the long-term stability of BP in the air. The formation of heterostructures can reduce the potential barrier energy in target gas molecules, thus enhancing the absorption energy and charge transfer. Taking the paramagnetic NO2 gas molecules as a representative, a stable response magnitude of 2.11 to 100 ppb NO2 is achieved for 80 days, which is far larger than the initial responses of most BP-based materials. A practical gas sensing system is also developed to demonstrate its real-world implementation. This work provides a promising demonstration of 0D noble metal within 2D BP-based vdW heterostructure for simultaneously improving the long-term stability and room-temperature reversible gas sensing.
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Affiliation(s)
- Zhiping Liang
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Mingyuan Wang
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electrical Science and Engineering, Southeast University, Nanjing 210096, China
| | - Xiangzhao Zhang
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Zhong Li
- Key Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Kaixiang Du
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Jian Yang
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Shuang-Ying Lei
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electrical Science and Engineering, Southeast University, Nanjing 210096, China
| | - Guanjun Qiao
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Jian Zhen Ou
- Key Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
- School of Engineering, RMIT University, Melbourne 3000, Australia
| | - Guiwu Liu
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
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14
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Mirzaei A, Lee MH, Safaeian H, Kim TU, Kim JY, Kim HW, Kim SS. Room Temperature Chemiresistive Gas Sensors Based on 2D MXenes. SENSORS (BASEL, SWITZERLAND) 2023; 23:8829. [PMID: 37960529 PMCID: PMC10650214 DOI: 10.3390/s23218829] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Revised: 10/17/2023] [Accepted: 10/24/2023] [Indexed: 11/15/2023]
Abstract
Owing to their large surface area, two-dimensional (2D) semiconducting nanomaterials have been extensively studied for gas-sensing applications in recent years. In particular, the possibility of operating at room temperature (RT) is desirable for 2D gas sensors because it significantly reduces the power consumption of the sensing device. Furthermore, RT gas sensors are among the first choices for the development of flexible and wearable devices. In this review, we focus on the 2D MXenes used for the realization of RT gas sensors. Hence, pristine, doped, decorated, and composites of MXenes with other semiconductors for gas sensing are discussed. Two-dimensional MXene nanomaterials are discussed, with greater emphasis on the sensing mechanism. MXenes with the ability to work at RT have great potential for practical applications such as flexible and/or wearable gas sensors.
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Affiliation(s)
- Ali Mirzaei
- Department of Materials Science and Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran; (A.M.); (H.S.)
| | - Myoung Hoon Lee
- Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea; (M.H.L.); (T.-U.K.)
| | - Haniyeh Safaeian
- Department of Materials Science and Engineering, Shiraz University of Technology, Shiraz 71557-13876, Iran; (A.M.); (H.S.)
| | - Tae-Un Kim
- Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea; (M.H.L.); (T.-U.K.)
| | - Jin-Young Kim
- The Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea;
| | - Hyoun Woo Kim
- The Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea;
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Sang Sub Kim
- Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea; (M.H.L.); (T.-U.K.)
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15
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Huang L, Lu D, Zeng W, Zhou Q. Pt-Doped HfS 2 Monolayer as a Novel Sensor and Scavenger for Dissolved Gases (H 2, CO 2, CH 4, and C 2H 2) in Transformer Oil: A Density Functional Theory Study. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:12920-12930. [PMID: 37643474 DOI: 10.1021/acs.langmuir.3c02110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/31/2023]
Abstract
Detecting the types and concentrations of dissolved gases in insulating oil by resistivity-type sensors is an extremely effective means for diagnosing faults in an oil-immersed transformer. However, further breakthroughs and innovations are needed in gas-sensitive materials for preparing high-performance resistivity-type sensors. In this investigation, the application possibility of using Pt-doped HfS2 (Pt-HfS2) as gas-sensitive materials for the detection of dissolved H2, CO2, CH4, and C2H2 in oil has been verified by analyzing the adsorption energy (Ead), differential charge density (DCD), density of states (DOS), frontier molecular orbital, and desorption time based on density functional theory (DFT). The outcomes suggest that the band gap of HfS2 is obviously narrowed after doping Pt at the position of the bridge between the S and Hf atoms, resulting in a significant increase in the conductivity of HfS2. The low adsorption energy implies that there is only weak physical adsorption between Pt-HfS2 and CO2 (-0.783 eV). In contrast, the highly hybridized atomic orbitals of Pt with H2, CH4, and C2H2 indicate that strong chemical adsorption reactions occur. Two-dimensional Pt-HfS2 as a gas sensor has a great monitoring performance for CH4 at 298 K (room temperature). This research serves as theoretical guidelines for probing the application potential of Pt-HfS2 in fault diagnosis and predictive maintenance of an oil-immersed transformer.
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Affiliation(s)
- Long Huang
- College of Engineering and Technology, Southwest University, Chongqing 400715, China
| | - Detao Lu
- College of Engineering and Technology, Southwest University, Chongqing 400715, China
| | - Wen Zeng
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - Qu Zhou
- College of Engineering and Technology, Southwest University, Chongqing 400715, China
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16
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Zhang J, Zhang M, Wang S, Wu Z, Zhang Z. Moisture-Resistant and Highly Selective NH 3 Sensor Based on CdS/WS 2 Composite Heterojunction. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:10352-10366. [PMID: 37463135 DOI: 10.1021/acs.langmuir.3c00465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
This study reports the synthesis of CdS/WS2 composites via a green and ultra-low-cost hydrothermal method. By controlling the relative mass ratio between WS2 and CdS, an n-n type CdS/WS2 heterostructure, with excellent NH3 gas-sensitive properties, was developed and investigated at room temperature. Compared with pristine WS2 and CdS, the CdS/WS2-40%wt composite exhibited excellent selectivity of more than 4 orders of magnitude for sensing NH3, a very short recovery time of 3 s, and ultrahigh selectivity at room temperature. The large specific surface area of the CdS/WS2 composite increased the active sites for the gas-sensitive reaction. Additionally, the 2D morphology of CdS/WS2 and the heterojunction formed between WS2 and CdS contributed to the improved performance. Anti-humidity interference tests showed that the CdS/WS2 sample remained stable under real-time monitoring of NH3 at different ambient humidity values. This study paves the way for designing high-performance gas sensors operating at room temperature.
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Affiliation(s)
- Jinzhu Zhang
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang, China
| | - Min Zhang
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang, China
| | - Shuying Wang
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang, China
| | - Zhaofeng Wu
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang, China
| | - Ze Zhang
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physics Science and Technology, Xinjiang University, Urumqi 830046, Xinjiang, China
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17
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Saggu IS, Singh S, Chen K, Xuan Z, Swihart MT, Sharma S. Ultrasensitive Room-Temperature NO 2 Detection Using SnS 2/MWCNT Composites and Accelerated Recovery Kinetics by UV Activation. ACS Sens 2023; 8:243-253. [PMID: 36647806 DOI: 10.1021/acssensors.2c02104] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
High performance with lower power consumption is one among the essential features of a sensing device. Minute traces of hazardous gases such as NO2 are difficult to detect. Tin disulfide (SnS2) nanosheets have emerged as a promising NO2 sensor. However, their poor room-temperature conductivity gives rise to inferior sensitivity and sluggish recovery rates, thereby hindering their applications. To mitigate this problem, we present a low-cost ultrasensitive NO2 gas sensor with tin disulfide/multiwalled carbon nanotube (SnS2/MWCNT) nanocomposites, prepared using a single-step hydrothermal method, as sensing elements. Relative to pure SnS2, the conductivity of nanocomposites improved significantly. The sensor displayed a decrease in resistance when exposed to NO2, an oxidizing gas, and exhibited p-type conduction, also confirmed in separate Mott-Schottky measurements. At a temperature of 20 °C, the sensor device has a relative response of about ≈5% (3%) for 25 ppb (1 ppb) of NO2 with complete recovery in air (10 min) and excellent recovery rates with UV activation (0.3 min). A theoretical lower limit of detection (LOD) of 7 ppt implies greater sensitivity than all previously reported SnS2-based gas sensors, to the best of our knowledge. The improved sensing characteristics were attributed to the formation of nano p-n heterojunctions, which enhances the charge transport and gives rise to faster response. The composite sensor also demonstrated good NO2 selectivity against a variety of oxidizing and reducing gases, as well as excellent stability and long-term durability. This work will provide a fresh perspective on SnS2-based composite materials for practical gas sensors.
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Affiliation(s)
- Imtej Singh Saggu
- Department of Physics, Guru Nanak Dev University, Amritsar, Punjab143005, India
| | - Sukhwinder Singh
- Department of Physics, Guru Nanak Dev University, Amritsar, Punjab143005, India
| | - Kaiwen Chen
- Department of Chemical and Biological Engineering, University at Buffalo (SUNY), Buffalo, New York14260, United States
| | - Zhengxi Xuan
- Department of Chemical and Biological Engineering, University at Buffalo (SUNY), Buffalo, New York14260, United States
| | - Mark T Swihart
- Department of Chemical and Biological Engineering, University at Buffalo (SUNY), Buffalo, New York14260, United States
| | - Sandeep Sharma
- Department of Physics, Guru Nanak Dev University, Amritsar, Punjab143005, India
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18
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Manoharan M, Govindharaj K, Muthumalai K, Pandian R, Haldorai Y, Rajendra Kumar RT. Highly Selective Room Temperature Detection of NH 3 and NO x Using Oxygen-Deficient W 18O 49-Supported WS 2 Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:4703-4712. [PMID: 36637973 DOI: 10.1021/acsami.2c18732] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
In this paper, we reported the controlled synthesis of tungsten disulfide/reduced tungsten oxide (WS2/W18O49) heterojunctions for highly efficient room temperature NOx and ammonia (NH3) sensors. X-ray diffraction analysis revealed the formation of the oxygen-deficient W18O49 phase along with WS2. Field-emission scanning electron microscopy and transmission electron microscopy displayed the formation of WS2 flakes over W18O49 nanorods. X-ray photoelectron spectroscopy showed the presence of tungsten in W4+, W5+, and W6+ oxidation states corresponding to WS2 and W18O49, respectively. The WS2/W18O49 heterojunction sensor exhibited sub-ppm level sensitivity to NOx and NH3 at room temperature. The heterojunction sensor detected 0.6 ppm NOx and 0.5 ppm NH3, with a corresponding response of 7.1 and 3.8%, respectively. The limit of detection of the sensor was calculated to be 0.05 and 0.17 ppm for NH3 and NOx, respectively. The cyclic stability test showed that the sensor exhibited high stability even after 24 cycles for the detection of NH3 and 14 cycles for NOx. Compared to pristine WO3 and WS2, the WS2/W18O49 heterojunction showed high selectivity toward NOx and NH3. The results could be useful for the development of room temperature NOx and NH3 sensors.
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Affiliation(s)
- Mathankumar Manoharan
- Advanced Materials and Devices Laboratory, Department of Nanoscience and Technology, Bharathiar University, Coimbatore, Tamil Nadu641046, India
| | - Kamaraj Govindharaj
- Advanced Materials and Devices Laboratory, Department of Nanoscience and Technology, Bharathiar University, Coimbatore, Tamil Nadu641046, India
| | - K Muthumalai
- Advanced Materials and Devices Laboratory, Department of Nanoscience and Technology, Bharathiar University, Coimbatore, Tamil Nadu641046, India
| | - Ramanathaswamy Pandian
- Surface and Sensors Studies Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamil Nadu603102, India
| | - Yuvaraj Haldorai
- Advanced Materials and Devices Laboratory, Department of Nanoscience and Technology, Bharathiar University, Coimbatore, Tamil Nadu641046, India
| | - Ramasamy Thangavelu Rajendra Kumar
- Advanced Materials and Devices Laboratory, Department of Nanoscience and Technology, Bharathiar University, Coimbatore, Tamil Nadu641046, India
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19
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Chu T, Rong C, Zhou L, Mao X, Zhang B, Xuan F. Progress and Perspectives of Single-Atom Catalysts for Gas Sensing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206783. [PMID: 36106690 DOI: 10.1002/adma.202206783] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2022] [Revised: 09/02/2022] [Indexed: 06/15/2023]
Abstract
Single-atom catalysts (SACs) attract extensive attention in the field of heterogeneous catalysis in recent years due to the maximum atom utilization and unique physical and chemical properties. The gas sensing is actually a heterogeneous catalysis process but the SACs are new to this area. Although SACs show huge potential in gas sensing, the SACs gas sensing area currently is still at the infancy stage. This work critically reviews the recent advances and current status of single-atom gas sensing materials. General synthesis routes, characterization methods, and sensing performance indexes are introduced. At the end, the challenges and future prospects on SACs gas sensing are presented from the authors' perspectives. This work is anticipated to provide insights and guideline for the chemical sensing community.
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Affiliation(s)
- Tianshu Chu
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Chao Rong
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Lei Zhou
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Xinyuan Mao
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Bowei Zhang
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Fuzhen Xuan
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
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20
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Sysoev VV, Lashkov AV, Lipatov A, Plugin IA, Bruns M, Fuchs D, Varezhnikov AS, Adib M, Sommer M, Sinitskii A. UV-Light-Tunable p-/n-Type Chemiresistive Gas Sensors Based on Quasi-1D TiS 3 Nanoribbons: Detection of Isopropanol at ppm Concentrations. SENSORS (BASEL, SWITZERLAND) 2022; 22:9815. [PMID: 36560185 PMCID: PMC9783684 DOI: 10.3390/s22249815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Revised: 12/02/2022] [Accepted: 12/05/2022] [Indexed: 06/17/2023]
Abstract
The growing demand of society for gas sensors for energy-efficient environmental sensing stimulates studies of new electronic materials. Here, we investigated quasi-one-dimensional titanium trisulfide (TiS3) crystals for possible applications in chemiresistors and on-chip multisensor arrays. TiS3 nanoribbons were placed as a mat over a multielectrode chip to form an array of chemiresistive gas sensors. These sensors were exposed to isopropanol as a model analyte, which was mixed with air at low concentrations of 1-100 ppm that are below the Occupational Safety and Health Administration (OSHA) permissible exposure limit. The tests were performed at room temperature (RT), as well as with heating up to 110 °C, and under an ultraviolet (UV) radiation at λ = 345 nm. We found that the RT/UV conditions result in a n-type chemiresistive response to isopropanol, which seems to be governed by its redox reactions with chemisorbed oxygen species. In contrast, the RT conditions without a UV exposure produced a p-type response that is possibly caused by the enhancement of the electron transport scattering due to the analyte adsorption. By analyzing the vector signal from the entire on-chip multisensor array, we could distinguish isopropanol from benzene, both of which produced similar responses on individual sensors. We found that the heating up to 110 °C reduces both the sensitivity and selectivity of the sensor array.
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Affiliation(s)
- Victor V. Sysoev
- Department of Physics, Yuri Gagarin State Technical University of Saratov, 410054 Saratov, Russia
| | - Andrey V. Lashkov
- Center for Probe Microscopy and Nanotechnology, National Research University of Electronic Technology, 124498 Moscow, Russia
| | - Alexey Lipatov
- Department of Chemistry, Biology & Health Sciences, South Dakota School of Mines and Technology, 501 E. Saint Joseph St., Rapid City, SD 57701, USA
| | - Ilya A. Plugin
- Department of Physics, Yuri Gagarin State Technical University of Saratov, 410054 Saratov, Russia
| | - Michael Bruns
- Institute for Applied Materials and Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | - Dirk Fuchs
- Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | - Alexey S. Varezhnikov
- Department of Physics, Yuri Gagarin State Technical University of Saratov, 410054 Saratov, Russia
| | - Mustahsin Adib
- Institute for Microstructure Technology, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
| | - Martin Sommer
- Institute for Microstructure Technology, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
| | - Alexander Sinitskii
- Department of Chemistry, University of Nebraska—Lincoln, Lincoln, NE 68588, USA
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21
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Nazir G, Rehman A, Hussain S, Hakami O, Heo K, Amin MA, Ikram M, Patil SA, Din MAU. Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe 2 van der Waals Heterostructures for Excellent Photodetector and NO 2 Gas Sensing Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3713. [PMID: 36364489 PMCID: PMC9658387 DOI: 10.3390/nano12213713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 10/19/2022] [Accepted: 10/20/2022] [Indexed: 06/16/2023]
Abstract
Herein, we reported a unique photo device consisting of monolayer graphene and a few-layer rhenium diselenide (ReSe2) heterojunction. The prepared Gr/ReSe2-HS demonstrated an excellent mobility of 380 cm2/Vs, current on/off ratio ~ 104, photoresponsivity (R ~ 74 AW-1 @ 82 mW cm-2), detectivity (D* ~ 1.25 × 1011 Jones), external quantum efficiency (EQE ~ 173%) and rapid photoresponse (rise/fall time ~ 75/3 µs) significantly higher to an individual ReSe2 device (mobility = 36 cm2 V-1s-1, Ion/Ioff ratio = 1.4 × 105-1.8 × 105, R = 11.2 AW-1, D* = 1.02 × 1010, EQE ~ 26.1%, rise/fall time = 2.37/5.03 s). Additionally, gate-bias dependent Schottky barrier height (SBH) estimation for individual ReSe2 (45 meV at Vbg = 40 V) and Gr/ReSe2-HS (9.02 meV at Vbg = 40 V) revealed a low value for the heterostructure, confirming dry transfer technique to be successful in fabricating an interfacial defects-free junction. In addition, HS is fully capable to demonstrate an excellent gas sensing response with rapid response/recovery time (39/126 s for NO2 at 200 ppb) and is operational at room temperature (26.85 °C). The proposed Gr/ReSe2-HS is capable of demonstrating excellent electro-optical, as well as gas sensing, performance simultaneously and, therefore, can be used as a building block to fabricate next-generation photodetectors and gas sensors.
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Affiliation(s)
- Ghazanfar Nazir
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Adeela Rehman
- Department of Mechanical Engineering, College of Engineering, Kyung Hee University, Yongin 17104, Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Othman Hakami
- Department of Chemistry, Faculty of Science, Jazan University, Jazan, Saudi Arabia
| | - Kwang Heo
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Mohammed A. Amin
- Department of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia
| | - Muhammad Ikram
- Solar Cell Applications Research Lab, Department of Physics, Government College University Lahore, Lahore 54000, Punjab, Pakistan
| | - Supriya A. Patil
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
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22
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Zhao K, He D, Fu S, Bai Z, Miao Q, Huang M, Wang Y, Zhang X. Interfacial Coupling and Modulation of van der Waals Heterostructures for Nanodevices. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3418. [PMID: 36234543 PMCID: PMC9565824 DOI: 10.3390/nano12193418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Revised: 09/09/2022] [Accepted: 09/23/2022] [Indexed: 06/16/2023]
Abstract
In recent years, van der Waals heterostructures (vdWHs) of two-dimensional (2D) materials have attracted extensive research interest. By stacking various 2D materials together to form vdWHs, it is interesting to see that new and fascinating properties are formed beyond single 2D materials; thus, 2D heterostructures-based nanodevices, especially for potential optoelectronic applications, were successfully constructed in the past few decades. With the dramatically increased demand for well-controlled heterostructures for nanodevices with desired performance in recent years, various interfacial modulation methods have been carried out to regulate the interfacial coupling of such heterostructures. Here, the research progress in the study of interfacial coupling of vdWHs (investigated by Photoluminescence, Raman, and Pump-probe spectroscopies as well as other techniques), the modulation of interfacial coupling by applying various external fields (including electrical, optical, mechanical fields), as well as the related applications for future electrics and optoelectronics, have been briefly reviewed. By summarizing the recent progress, discussing the recent advances, and looking forward to future trends and existing challenges, this review is aimed at providing an overall picture of the importance of interfacial modulation in vdWHs for possible strategies to optimize the device's performance.
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23
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Fan JL, Hu XF, Qin WW, Liu ZY, Liu YS, Gao SJ, Tan LP, Yang JL, Luo LB, Zhang W. UV-light-assisted gas sensor based on PdSe 2/InSe heterojunction for ppb-level NO 2 sensing at room temperature. NANOSCALE 2022; 14:13204-13213. [PMID: 36047737 DOI: 10.1039/d2nr03881a] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The fabrication of van der Waals (vdWs) heterostructures mainly extends to two-dimensional (2D) materials. Nevertheless, the current processes for obtaining high-quality 2D films are mainly exfoliated from their bulk counterparts or by high-temperature chemical vapor deposition (CVD), which limits industrial production and is often accompanied by defects. Herein, we first fabricated the type-II p-PdSe2/n-InSe vdWs heterostructure using the ultra-high vacuum laser molecular beam epitaxy (LMBE) technique combined with the vertical 2D stacking strategy, which is reproducible and suitable for high-volume manufacturing. This work found that the introduction of 365 nm UV light illumination can significantly improve the electrical transport properties and NO2 sensing performance of the PdSe2/InSe heterojunction-based device at room temperature (RT). The detailed studies confirm that the sensor based on the PdSe2/InSe heterojunction delivers the comparable sensitivity (Ra/Rg = ∼2.6 at 10 ppm), a low limit of detection of 52 ppb, and excellent selectivity for NO2 gas under UV light illumination, indicating great potential for NO2 detection. Notably, the sensor possesses fast response and full recovery properties (275/1078 s) compared to the results in the dark. Furthermore, the mechanism of enhanced gas sensitivity was proposed based on the energy band alignment of the PdSe2/InSe heterojunction with the assistance of investigating the surface potential variations. This work may pave the way for the development of high-performance, room-temperature gas sensors based on 2D vdWs heterostructures through the LMBE technique.
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Affiliation(s)
- Jin-Le Fan
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Xue-Feng Hu
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Wei-Wei Qin
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Zhi-Yuan Liu
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Yan-Song Liu
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Shou-Jing Gao
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Li-Ping Tan
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Ji-Lei Yang
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Lin-Bao Luo
- School of Microelectronics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China
| | - Wei Zhang
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
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24
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Malik R, Joshi N, Tomer VK. Functional graphitic carbon (IV) nitride: A versatile sensing material. Coord Chem Rev 2022. [DOI: 10.1016/j.ccr.2022.214611] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
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25
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Lei G, Pan H, Mei H, Liu X, Lu G, Lou C, Li Z, Zhang J. Emerging single atom catalysts in gas sensors. Chem Soc Rev 2022; 51:7260-7280. [PMID: 35899763 DOI: 10.1039/d2cs00257d] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Single atom catalysts (SACs) offer unprecedented opportunities for high-efficiency reactions taking place in many important fields of catalytic processes, electrochemistry, and photoreactions. Due to their maximized atomic utilization and unique electronic and chemical properties, SACs can provide high activity and excellent selectivity for gas adsorption and electron transport, leveraging SACs that enhance the detection sensitivity and selectivity to target gases. In the past few years, SACs including both noble (Pt, Pd, Au, etc.) and non-noble (Mn, Ni, Zn etc.) metals have been demonstrated to be very useful in optimizing sensing performances. However, a comprehensive review on this topic is still missing. Herein, we summarize the synthesis technologies of SACs that are applicable to gas sensors. The electronic and chemical interactions between SACs and host sensing materials, which are crucial to sensor functions, are discussed. Then, we highlight the application progress of various SACs in gas sensors. Prospects in the creation of new sensing materials with emerging SACs and versatile supports are also present. Finally, the challenges and prospects of SACs in the future development of sensors are analyzed.
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Affiliation(s)
- Guanglu Lei
- College of Physics, Qingdao University, Qingdao 266071, China.
| | - Hongyin Pan
- College of Physics, Qingdao University, Qingdao 266071, China.
| | - Houshan Mei
- College of Physics, Qingdao University, Qingdao 266071, China.
| | - Xianghong Liu
- College of Physics, Qingdao University, Qingdao 266071, China.
| | - Guocai Lu
- College of Physics, Qingdao University, Qingdao 266071, China.
| | - Chengming Lou
- College of Physics, Qingdao University, Qingdao 266071, China.
| | - Zishuo Li
- College of Physics, Qingdao University, Qingdao 266071, China.
| | - Jun Zhang
- College of Physics, Qingdao University, Qingdao 266071, China.
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26
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Wang J, Zeng W, Zhou Q. Research status of gas sensing performance of MoTe2-based gas sensors: A mini review. Front Chem 2022; 10:950974. [PMID: 35936095 PMCID: PMC9354782 DOI: 10.3389/fchem.2022.950974] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2022] [Accepted: 07/05/2022] [Indexed: 11/13/2022] Open
Abstract
Transition metal dichalcogenides (TMDs) have been widely explored for their excellent gas sensing properties, especially high sensitivity and stability at room temperature. MoTe2 exhibits good sensitivity and selectivity to some nitrogen-containing gases (i.e., NO2, NH3) and has received extensive attention in gas sensing. In addition, increasingly complex production environments place demands on high-quality gas sensors. Therefore, worldwide efforts are devoted to designing and manufacturing MoTe2-based gas sensors with faster response and recovery speed. This paper summarizes the research progress of MoTe2-based gas sensing, focuses on the practical measures to improve the response and recovery speed of MoTe2-based sensors, and discusses the mechanism. This provides guidance for exploring higher performance MoTe2 sensors.
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Affiliation(s)
- Jingyu Wang
- College of Materials Science and Engineering, Chongqing University, Chongqing, China
| | - Wen Zeng
- College of Materials Science and Engineering, Chongqing University, Chongqing, China
- *Correspondence: Wen Zeng, ; Qu Zhou,
| | - Qu Zhou
- College of Engineering and Technology, Southwest University, Chongqing, China
- *Correspondence: Wen Zeng, ; Qu Zhou,
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27
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Lin H, Zhang Z, Zhang H, Lin KT, Wen X, Liang Y, Fu Y, Lau AKT, Ma T, Qiu CW, Jia B. Engineering van der Waals Materials for Advanced Metaphotonics. Chem Rev 2022; 122:15204-15355. [PMID: 35749269 DOI: 10.1021/acs.chemrev.2c00048] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.
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Affiliation(s)
- Han Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Zhenfang Zhang
- School of Textile Science and Engineering, Xi'an Polytechnic University, Xi'an 710048, China
| | - Huihui Zhang
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Keng-Te Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia
| | - Xiaoming Wen
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Yao Liang
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Yang Fu
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Alan Kin Tak Lau
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Tianyi Ma
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Baohua Jia
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia.,Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
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28
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High-Performance Room-Temperature Conductometric Gas Sensors: Materials and Strategies. CHEMOSENSORS 2022. [DOI: 10.3390/chemosensors10060227] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
Chemiresistive sensors have gained increasing interest in recent years due to the necessity of low-cost, effective, high-performance gas sensors to detect volatile organic compounds (VOC) and other harmful pollutants. While most of the gas sensing technologies rely on the use of high operation temperatures, which increase usage cost and decrease efficiency due to high power consumption, a particular subset of gas sensors can operate at room temperature (RT). Current approaches are aimed at the development of high-sensitivity and multiple-selectivity room-temperature sensors, where substantial research efforts have been conducted. However, fewer studies presents the specific mechanism of action on why those particular materials can work at room temperature and how to both enhance and optimize their RT performance. Herein, we present strategies to achieve RT gas sensing for various materials, such as metals and metal oxides (MOs), as well as some of the most promising candidates, such as polymers and hybrid composites. Finally, the future promising outlook on this technology is discussed.
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29
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Singh S, Deb J, Singh JV, Sarkar U, Sharma S. Highly Selective Ethyl Mercaptan Sensing Using a MoSe 2/SnO 2 Composite at Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23916-23927. [PMID: 35548976 DOI: 10.1021/acsami.1c25112] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Volatile organic sulfur compounds (VOSCs) serve not only as biomarkers for dental diseases such as halitosis but also as a tracer for monitoring air quality. Room-temperature selective detection and superior sensitivity against VOSCs at a sub-ppm level has remained a challenging task. Here, we propose a heterostructure-based design using a MoSe2/SnO2 composite for achieving sensitive and selective detection of ethyl mercaptan at room temperature. The composite was synthesized via a facile two-step method. A composite-based device has shown detection down to 1 ppm of ethyl mercaptan over a wider range of relative humidity (40-90%). Notably, the composite has shown adsorption selectivity toward ethyl mercaptan compared to hydrogen sulfide and other reducing or oxidizing analytes. Moreover, a density functional theory (DFT) study has been performed to understand the adsorption selectivity, charge transfer, and modification in the electronic properties after molecule adsorption on the host surface. Simulations predicted the lowest negative adsorption energy for ethyl mercaptan, implying the chemisorption (-142.029 kJ mol-1) process of adsorption. The device thus-obtained has also shown a stable response even at an extreme relative humidity level of 90%. The obtained results and superior signal-to-noise ratio indicate that a MoSe2/SnO2-based sensor may be a promising candidate for highly selective and sensitive detection of ethyl mercaptan even below 1 ppm.
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Affiliation(s)
- Sukhwinder Singh
- Department of Physics, Guru Nanak Dev University, Amritsar, Punjab 143005, India
| | - Jyotirmoy Deb
- Department of Physics, Assam University, Silchar 788011, India
| | - Jatinder Vir Singh
- Department of Pharmaceutical Sciences, Guru Nanak Dev University, Amritsar, Punjab 143005, India
| | - Utpal Sarkar
- Department of Physics, Assam University, Silchar 788011, India
| | - Sandeep Sharma
- Department of Physics, Guru Nanak Dev University, Amritsar, Punjab 143005, India
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30
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Guo X, Ding Y, Yang X, Du B, Zhao C, Liang C, Ou Y, Kuang D, Wu Z, He Y. 2D SnSe 2 nanoflakes decorated with 1D ZnO nanowires for ppb-level NO 2 detection at room temperature. JOURNAL OF HAZARDOUS MATERIALS 2022; 426:128061. [PMID: 34953260 DOI: 10.1016/j.jhazmat.2021.128061] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2021] [Revised: 12/07/2021] [Accepted: 12/07/2021] [Indexed: 06/14/2023]
Abstract
The detection of air pollutant nitrogen dioxide (NO2) is of great importance arising from its great harm to the ecological environment and human health. However, the detection range of most NO2 sensors is ppm-level, and it is still challenging to achieve lower concentration (ppb-level) NO2 detection. Herein, 2D tin diselenide nanoflakes decorated with 1D zinc oxide nanowires (SnSe2/ZnO) heterojunctions were first reported by facile hydrothermal and ultra-sonication methods. The response of the fabricated SnSe2/ZnO sensor enhances 3.41 times on average compared with that of pure SnSe2 sensor to 50-150 ppb NO2 with a high detection sensitivity (22.57 ppm-1) at room temperature. In addition, the SnSe2/ZnO sensor has complete recovery, negligible cross-sensitivity, and small relative standard deviation (6.98%) during the 1 month sensing test, which can meet the requirements for NO2 detection in environmental monitoring. The enhanced NO2 sensing performance can be attributed to the n-n heterojunction constructed between SnSe2 and ZnO. The as-prepared sensor based on SnSe2/ZnO hybrid significantly promotes the development of the low detection limit of the NO2 sensor at room temperature.
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Affiliation(s)
- Xuezheng Guo
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China; State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China; Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China
| | - Yanqiao Ding
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Xi Yang
- Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China
| | - Bingsheng Du
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China; State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China; Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China
| | - Chengjiu Zhao
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Chengyao Liang
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China; State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China; Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China
| | - Yi Ou
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Delin Kuang
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Zhilin Wu
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Yong He
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China; State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China.
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31
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Xu K, Ha N, Hu Y, Ma Q, Chen W, Wen X, Ou R, Trinh V, McConville CF, Zhang BY, Ren G, Ou JZ. A room temperature all-optical sensor based on two-dimensional SnS 2 for highly sensitive and reversible NO 2 sensing. JOURNAL OF HAZARDOUS MATERIALS 2022; 426:127813. [PMID: 34844798 DOI: 10.1016/j.jhazmat.2021.127813] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2021] [Revised: 11/01/2021] [Accepted: 11/13/2021] [Indexed: 06/13/2023]
Abstract
Fiber-optic gas sensors have been considered a low-cost, effective, and robust approach for monitoring nitrogen dioxide (NO2) gas which is a major toxic gaseous pollutant. The integration of functional nanoscale materials provides additional dimensions for realizing ultra-sensitive and selective NO2 detection, however, the trade-off is the need for sophisticated photonic structures or external non-optical peripherals (e.g. electrical heaters). In this work, we demonstrate the development of a room temperature, all-optical, and high-performance NO2 sensor based on a simple D-shaped optical fiber incorporated with ultra-thin two-dimensional (2D) tin disulfide (SnS2). A visible light source at 473 nm is used to power the optical fiber, and at the same time excite the 2D SnS2 layer via the evanescent field, to generate extra charge carriers. Upon exposure to NO2 at room temperature, the physisorbed gas molecules induce charge exchange with the 2D SnS2. This significantly re-distributes the photo-excited charge carriers in the ultra-thin material, therefore manipulating the corresponding optical absorption and scattering. As a result, the optical output power intensity varies as the sensor output through the evanescent field coupling. This all-optical sensor demonstrates an optical power variation of up to 7 µW upon the exposure of NO2 gas at a low concentration of 50 ppb. This response is fully reversible with an extremely low limit of detection (LOD) of 0.464 ppb. We consider that this work provides a feasible and simple solution to realize high-performance optical gas sensors without the integration of external non-optical peripherals for effective monitoring of environmentally hazardous gases.
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Affiliation(s)
- Kai Xu
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Nam Ha
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Yihong Hu
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Qijie Ma
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Weijian Chen
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Kensington, New South Wales 2052, Australia
| | - Xiaoming Wen
- Centre for Translational Atomaterials, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Rui Ou
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Vien Trinh
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Chris F McConville
- Institute for Frontier Materials (IFM), Deakin University, Waurn Ponds, VIC 3216, Australia
| | - Bao Yue Zhang
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia.
| | - Guanghui Ren
- Integrated Photonics and Applications Centre (InPAC), RMIT University, Melbourne, Victoria 3000, Australia.
| | - Jian Zhen Ou
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia.
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Chepkasov IV, Sukhanova EV, Kvashnin AG, Zakaryan HA, Aghamalyan MA, Mamasakhlisov YS, Manakhov AM, Popov ZI, Kvashnin DG. Computational Design of Gas Sensors Based on V 3S 4 Monolayer. NANOMATERIALS 2022; 12:nano12050774. [PMID: 35269262 PMCID: PMC8912300 DOI: 10.3390/nano12050774] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2022] [Revised: 02/17/2022] [Accepted: 02/22/2022] [Indexed: 02/04/2023]
Abstract
Novel magnetic gas sensors are characterized by extremely high efficiency and low energy consumption, therefore, a search for a two-dimensional material suitable for room temperature magnetic gas sensors is a critical task for modern materials scientists. Here, we computationally discovered a novel ultrathin two-dimensional antiferromagnet V3S4, which, in addition to stability and remarkable electronic properties, demonstrates a great potential to be applied in magnetic gas sensing devices. Quantum-mechanical calculations within the DFT + U approach show the antiferromagnetic ground state of V3S4, which exhibits semiconducting electronic properties with a band gap of 0.36 eV. A study of electronic and magnetic response to the adsorption of various gas agents showed pronounced changes in properties with respect to the adsorption of NH3, NO2, O2, and NO molecules on the surface. The calculated energies of adsorption of these molecules were −1.25, −0.91, −0.59, and −0.93 eV, respectively. Obtained results showed the prospective for V3S4 to be used as effective sensing materials to detect NO2 and NO, for their capture, and for catalytic applications in which it is required to lower the dissociation energy of O2, for example, in oxygen reduction reactions. The sensing and reducing of NO2 and NO have great importance for improving environmental protection and sustainable development.
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Affiliation(s)
- Ilya V. Chepkasov
- Center for Energy Science and Technology, Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30, bld. 1, 121205 Moscow, Russia;
| | - Ekaterina V. Sukhanova
- Emanuel Institute of Biochemical Physics RAS, 4 Kosygin Street, 119334 Moscow, Russia; (E.V.S.); (Z.I.P.); (D.G.K.)
| | - Alexander G. Kvashnin
- Center for Energy Science and Technology, Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30, bld. 1, 121205 Moscow, Russia;
- Correspondence:
| | - Hayk A. Zakaryan
- Computational Materials Science Laboratory at the Center of Semiconductor Devices and Nanotechnology, Yerevan State University, 1 Alex Manoogian St., Yerevan 0025, Armenia; (H.A.Z.); (M.A.A.)
| | - Misha A. Aghamalyan
- Computational Materials Science Laboratory at the Center of Semiconductor Devices and Nanotechnology, Yerevan State University, 1 Alex Manoogian St., Yerevan 0025, Armenia; (H.A.Z.); (M.A.A.)
| | - Yevgeni Sh. Mamasakhlisov
- Department of Molecular Physics, Yerevan State University, 1 Alex Manoogian St., Yerevan 0025, Armenia;
- Department of Materials Technology and Structure of Electronic Technique, Russian-Armenian University, 123 Hovsep Emin St., Yerevan 0051, Armenia
| | - Anton M. Manakhov
- Aramco Innovations LLC, Aramco Research Center, 119234 Moscow, Russia;
| | - Zakhar I. Popov
- Emanuel Institute of Biochemical Physics RAS, 4 Kosygin Street, 119334 Moscow, Russia; (E.V.S.); (Z.I.P.); (D.G.K.)
| | - Dmitry G. Kvashnin
- Emanuel Institute of Biochemical Physics RAS, 4 Kosygin Street, 119334 Moscow, Russia; (E.V.S.); (Z.I.P.); (D.G.K.)
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Design and optimization strategies of metal oxide semiconductor nanostructures for advanced formaldehyde sensors. Coord Chem Rev 2022. [DOI: 10.1016/j.ccr.2021.214280] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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Tasnim KJ, Alharbi SAR, Musa MRK, Lovell SH, Akridge ZA, Yu M. Insight into the stacking and the species-ordering dependences of interlayer bonding in SiC/GeC polar heterostructures. NANOTECHNOLOGY 2022; 33:155706. [PMID: 34972095 DOI: 10.1088/1361-6528/ac475b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Accepted: 12/30/2021] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) polar materials experience an in-plane charge transfer between different elements due to their electron negativities. When they form vertical heterostructures, the electrostatic force triggered by such charge transfer plays an important role in the interlayer bonding beyond van der Waals (vdW) interaction. Our comprehensive first principle study on the structural stability of the 2D SiC/GeC hybrid bilayer heterostructure has found that the electrostatic interlayer interaction can induce theπ-πorbital hybridization between adjacent layers under different stacking and out-of-plane species ordering, with strong hybridization in the cases of Si-C and C-Ge species orderings but weak hybridization in the case of the C-C ordering. In particular, the attractive electrostatic interlayer interaction in the cases of Si-C and C-Ge species orderings mainly controls the equilibrium interlayer distance and the vdW interaction makes the system attain a lower binding energy. On the contrary, the vdW interaction mostly controls the equilibrium interlayer distance in the case of the C-C species ordering and the repulsive electrostatic interlayer force has less effect. Interesting finding is that the band structure of the SiC/GeC hybrid bilayer is sensitive to the layer-layer stacking and the out-of-plane species ordering. An indirect band gap of 2.76 eV (or 2.48 eV) was found under the AA stacking with Si-C ordering (or under the AB stacking with C-C ordering). While a direct band gap of 2.00-2.88 eV was found under other stacking and species orderings, demonstrating its band gap tunable feature. Furthermore, there is a charge redistribution in the interfacial region leading to a built-in electric field. Such field will separate the photo-generated charge carriers in different layers and is expected to reduce the probability of carrier recombination, and eventually give rise to the electron tunneling between layers.
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Affiliation(s)
- Kazi Jannatul Tasnim
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Safia Abdullah R Alharbi
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Md Rajib Khan Musa
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Simon Hosch Lovell
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Zachary Alexander Akridge
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Ming Yu
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
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Hassan MH, Khan R, Andreescu S. Advances in electrochemical detection methods for measuring contaminants of emerging concerns. ELECTROCHEMICAL SCIENCE ADVANCES 2021. [DOI: 10.1002/elsa.202100184] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022] Open
Affiliation(s)
- Mohamed H. Hassan
- Department of Chemistry and Biomolecular Science Clarkson University Potsdam New York USA
| | - Reem Khan
- Department of Chemistry and Biomolecular Science Clarkson University Potsdam New York USA
| | - Silvana Andreescu
- Department of Chemistry and Biomolecular Science Clarkson University Potsdam New York USA
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