All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits

Fully Printed Multilayer Ceramic Capacitors Based on High-k Perovskite Nanosheets

Printing technology enables the integration of chemically exfoliated perovskite nanosheets into high-performance microcapacitors. Theoretically, the capacitance value can be further enhanced by designing and constructing multilayer structures without increasing the device size. Yet, issues such as interlayer penetration in multilayer heterojunctions constructed using inkjet printing technology further limit the realization of this potential. Herein, a series of multilayer configurations, including Ag/(Ca2NaNb4O13/Ag)n and graphene/(Ca2NaNb4O13/graphene)n (n = 1-3), are successfully inkjet-printed onto diverse rigid and flexible substrates through optimized ink formulations, inkjet printing parameters, thermal treatment conditions, and rational multilayer structural design using high-k perovskite nanosheets, graphene nanosheets and silver. The dielectric performance is optimized by fine-tuning the number of dielectric layers and modifying the electrode/dielectric interface. As a result, the graphene/(Ca2NaNb4O13/graphene)3 multilayer ceramic capacitors exhibit a remarkable capacitance density of 346 ± 12 nF cm-2 and a high dielectric constant of 193 ± 18. Additionally, these devices demonstrate moderate insulation properties, flexibility, thermal stability, and chemical sensitivity. This work shed light on the potential of multilayer structural design in additive manufacturing of high-performance 2D material-based ceramic capacitors.

Wearable Sensors for Breath Monitoring Based on Water-Based Hexagonal Boron Nitride Inks Made with Supramolecular Functionalization

Wearable humidity sensors are attracting strong attention as they allow for real-time and continuous monitoring of important physiological information by enabling activity tracking as well as air quality assessment. Amongst 2Dimensional (2D) materials, graphene oxide (GO) is very attractive for humidity sensing due to its tuneable surface chemistry, high surface area, processability in water, and easy integration onto flexible substrates. However, strong hysteresis, low sensitivity, and cross-sensitivity issues limit the use of GO in practical applications, where continuous monitoring is preferred. Herein, a wearable and wireless impedance-based humidity sensor made with pyrene-functionalized hexagonal boron nitride (h-BN) nanosheets is demonstrated. The device shows enhanced sensitivity towards relative humidity (RH) (>1010 Ohms/%RH in the range from 5% to 100% RH), fast response (0.1 ms), no appreciable hysteresis, and no cross-sensitivity with temperature in the range of 25-60 °C. The h-BN-based sensor is able to monitor the whole breathing cycle process of exhaling and inhaling, hence enabling to record in real-time the subtlest changes of respiratory signals associated with different daily activities as well as various symptoms of flu, without requiring any direct contact with the individual.

Fully printed memristors made with MoS2 and graphene water-based inks

2-Dimensional materials (2DMs) offer an attractive solution for the realization of high density and reliable memristors, compatible with printed and flexible electronics. In this work we fabricate a fully inkjet printed MoS2-based resistive switching memory, where graphene is used as top electrode and silver is used as bottom electrode. Memristic effects are observed only after annealing of each printed component. The printed memory on silicon shows low SET/RESET voltage, short switching times (less than 0.1 s) and resistance switching ratios of 103-105, comparable or superior to the performance obtained in devices with both printed silver electrodes on rigid substrates. The same device on Kapton shows resistance switching ratios of 102-103 and remains stable at least up to 2% of strain. The memristor resistance switching is attributed to the formation of Ag conductive filaments, which can be suppressed by integrating graphene grown by chemical vapour deposition (CVD) onto the silver electrode. Temperature-dependent electrical measurements starting from 200 K show that memristic behavior appears at a temperature of ∼300 K, confirming that an energy threshold is needed to form the conductive filament. This work shows that inkjet printing is a very powerful technique for the fabrication of 2DMs-based resistive switches onto rigid and flexible substrates.

Printed MoSe2/GaAs Photodetector Enabling Ultrafast and Broadband Photodetection up to 1.5 μm

The development of high-performance and low-cost photodetectors (PDs) capable of detecting a broad range of wavelengths, from ultraviolet (UV) to near-infrared (NIR), is crucial for applications in sensing, imaging, and communication systems. This work presents a novel approach for printing a broadband PD based on a heterostructure of two-dimensional (2D) molybdenum diselenide (MoSe2) and gallium arsenide (GaAs). The fabrication process involves a precise technique to print MoSe2 nanoflower (NF) ink onto a prepatterned GaAs substrate. The resulting heterostructure exhibits unique properties, leveraging the exceptional electronic and optical characteristics of both GaAs and 2D MoSe2. The fabricated PD achieves an astounding on-off ratio of ∼105 at 5 V bias while demonstrating an exceptional on-off ratio of ∼104 at 0 V. The depletion region between GaAs and MoSe2 facilitates efficient charge generation and separation and collection of photogenerated carriers. This significantly improves the performance of the PD, resulting in a notably high responsivity across the spectrum. The peak responsivity of the device is 5.25 A/W at 5 V bias under 808 nm laser excitation, which is more than an order of magnitude higher than that of any commercial NIR PDs. Furthermore, the device demonstrates an exceptional responsivity of 0.36 A/W under an external bias of 0 V. The printing technology used here offers several advantages including simplicity, scalability, and compatibility with large-scale production. Additionally, it enables precise control over the placement and integration of the MoSe2 NF onto the GaAs substrate, ensuring uniformity and reliability in device performance. The exceptional responsivity across a broad spectral range (360-1550 nm) and the success of the printing technique make our MoSe2/GaAs heterostructure PD promising for future low-cost and efficient optoelectronic devices.

Two-Dimensional Van Der Waals Thin Film and Device

In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.

Water-based 2-dimensional anatase TiO2 inks for printed diodes and transistors

2-Dimensional (2D) materials are attracting strong interest in printed electronics because of their unique properties and easy processability, enabling the fabrication of devices with low cost and mass scalable methods such as inkjet printing. For the fabrication of fully printed devices, it is of fundamental importance to develop a printable dielectric ink, providing good insulation and the ability to withstand large electric fields. Hexagonal boron nitride (h-BN) is typically used as a dielectric in printed devices. However, the h-BN film thickness is usually above 1 μm, hence limiting the use of h-BN in low-voltage applications. Furthermore, the h-BN ink is composed of nanosheets with broad lateral size and thickness distributions, due to the use of liquid-phase exfoliation (LPE). In this work, we investigate anatase TiO₂ nanosheets (TiO₂-NS), produced by a mass scalable bottom-up approach. We formulate the TiO₂-NS into a water-based and printable solvent and demonstrate the use of the material with sub-micron thickness in printed diodes and transistors, hence validating the strong potential of TiO₂-NS as a dielectric for printed electronics.

Single-crystalline van der Waals layered dielectric with high dielectric constant

The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel^1,2. For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration^1,2. However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant (κ) dielectric with an atomically flat and dangling-bond-free surface^3,4. Here, we report a facile synthesis of a single-crystalline high-κ (κ of roughly 16.5) van der Waals layered dielectric Bi₂SeO₅. The centimetre-scale single crystal of Bi₂SeO₅ can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 μm² and as thin as monolayer. With these Bi₂SeO₅ nanosheets as dielectric and encapsulation layers, 2D materials such as Bi₂O₂Se, MoS₂ and graphene show improved electronic performances. For example, in 2D Bi₂O₂Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm² V^-1 s^-1 at 1.8 K. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits.

Study of Single and Multipass f-rGO Inkjet-Printed Structures with Various Concentrations: Electrical and Thermal Evaluation

Reduced graphene oxide (rGO) is a derivative of graphene, which has been widely used as the conductive pigment of many water-based inks and is recognized as one of the most promising graphene-based materials for large-scale and low-cost production processes. In this work, we evaluate a custom functionalised reduced graphene oxide ink (f-rGO) via inkjet-printing technology. Test line structures were designed and fabricated by the inkjet printing process using the f-rGO ink on a pretreated polyimide substrate. For the electrical characterisation of these devices, two-point (2P) and four-point (4P) probe measurements were implemented. The results showed a major effect of the number of printed passes on the resulting resistance for all ink concentrations in both 2P and 4P cases. Interesting results can be extracted by comparing the obtained multipass resistance values that results to similar effective concentration with less passes. These measurements can provide the ground to grasp the variation in resistance values due to the different ink concentrations, and printing passes and can provide a useful guide in achieving specific resistance values with adequate precision. Accompanying topography measurements have been conducted with white-light interferometry. Furthermore, thermal characterisation was carried out to evaluate the operation of the devices as temperature sensors and heaters. It has been found that ink concentration and printing passes directly influence the performance of both the temperature sensors and heaters.

Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors

Printed electronics, which fabricate electrical components and circuits on various substrates by leveraging functional inks and advanced printing technologies, have recently attracted tremendous attention due to their capability of large-scale, high-speed, and cost-effective manufacturing and also their great potential in flexible and wearable devices. To further achieve multifunctional, practical, and commercial applications, various printing technologies toward smarter pattern-design, higher resolution, greater production flexibility, and novel ink formulations toward multi-functionalities and high quality have been insensitively investigated. 2D materials, possessing atomically thin thickness, unique properties and excellent solution-processable ability, hold great potential for high-quality inks. Besides, the great variety of 2D materials ranging from metals, semiconductors to insulators offers great freedom to formulate versatile inks to construct various printed electronics. Here, a detailed review of the progress on 2D material inks formulation and its printed applications has been provided, specifically with an emphasis on emerging printed memristors. Finally, the challenges facing the field and prospects of 2D material inks and printed electronics are discussed.

Carbon nanotube-cellulose ink for rapid solvent identification

In this work, a conductive ink based on microfibrillated cellulose (MFC) and multiwalled carbon nanotubes (MWCNTs) was used to produce transducers for rapid liquid identification. The transducers are simple resistive devices that can be easily fabricated by scalable printing techniques. We monitored the electrical response due to the interaction between a given liquid with the carbon nanotube-cellulose film over time. Using principal component analysis of the electrical response, we were able to extract robust data to differentiate between the liquids. We show that the proposed liquid sensor can classify different liquids, including organic solvents (acetone, chloroform, and different alcohols) and is also able to differentiate low concentrations of glycerin in water (10-100 ppm). We have also investigated the influence of two important properties of the liquids, namely dielectric constant and vapor pressure, on the transduction of the MFC-MWCNT sensors. These results were corroborated by independent heat flow measurements (thermogravimetric analysis). The proposed MFC-MWCNT sensor platform may help paving the way to rapid, inexpensive, and robust liquid analysis and identification.

Flexible high-performance microcapacitors enabled by all-printed two-dimensional nanosheets

Chemically exfoliated nanosheets have exhibited great potential for applications in various electronic devices. Solution-based processing strategies such as inkjet printing provide a low-cost, environmentally friendly, and scalable route for the fabrication of flexible devices based on functional inks of two-dimensional nanosheets. In this study, chemically exfoliated high-k perovskite nanosheets (i.e., Ca₂Nb₃O₁₀ and Ca₂NaNb₄O₁₃) are well dispersed in appropriate solvents to prepare printable inks, and then, a series of microcapacitors with Ag and graphene electrodes are printed. The resulting microcapacitors, Ag/Ca₂Nb₃O₁₀/Ag, graphene/Ca₂Nb₃O₁₀/graphene, and graphene/Ca₂NaNb₄O₁₃/graphene, demonstrate high capacitance densities of 20, 80, and 150 nF/cm² and high dielectric constants of 26, 110, and 200, respectively. Such dielectric enhancement in the microcapacitors with graphene electrodes is possibly attributed to the dielectric/graphene interface. In addition, these microcapacitors also exhibit good insulating performance with a moderate electrical breakdown strength of approximately 1 MV/cm, excellent flexibility, and thermal stability up to 200 ℃. This work demonstrates the potential of high-k perovskite nanosheets for additive manufacturing of flexible high-performance dielectric capacitors.

Etch and Print: Graphene-Based Diodes for Silicon Technology

The graphene-silicon junction is one of the simplest conceivable interfaces in graphene-integrated semiconductor technology that can lead to the development of future generation of electronic and optoelectronic devices. However, graphene's integration is currently expensive and time-consuming and shows several challenges in terms of large-scale device fabrication, effectively preventing the possibility of implementing this technology into industrial processes. Here, we show a simple and cost-effective fabrication technique, based on inkjet printing, for the realization of printed graphene-silicon rectifying devices. The printed graphene-silicon diodes show an ON/OFF ratio higher than 3 orders of magnitude and a significant photovoltaic effect, resulting in a fill factor of ∼40% and a photocurrent efficiency of ∼2%, making the devices suitable for both electronic and optoelectronic applications. Finally, we demonstrate large-area pixeled photodetectors and compatibility with back-end-of-line fabrication processes.

Van der Waals-Interface-Dominated All-2D Electronics

The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.

Solution processed, vertically stacked hetero-structured diodes based on liquid-exfoliated WS2 nanosheets: from electrode-limited to bulk-limited behavior

Vertically stacked metal-semiconductor-metal heterostructures, based on liquid-processed nanomaterials, hold great potential for various printed electronic applications. Here we describe the fabrication of such devices by spray-coating semiconducting tungsten disulfide (WS₂) nanosheets onto indium tin oxide (ITO) bottom electrodes, followed by spraying single-walled carbon nanotubes (SWNTs) as the top electrode. Depending on the formulation of the SWNTs ink, we could fabricate either Ohmic or Schottky contacts at the WS₂/SWNTs interface. Using isopropanol-dispersed SWNTs led to Ohmic contacts and bulk-limited devices, characterized by out-of-plane conductivities of ∼10^-4 S m^-1. However, when aqueous SWNTs inks were used, rectification was observed, due to the formation of a doping-induced Schottky barrier at the WS₂/SWNTs interface. For thin WS₂ layers, such devices were characterized by a barrier height of ∼0.56 eV. However, increasing the WS₂ film thickness led to increased series resistance, leading to a change-over from electrode-limited to bulk-limited behavior at a transition thickness of ∼2.6 μm. This work demonstrates that Ohmic/Schottky behavior is tunable and lays the foundation for fabricating large-area 2D nanosheet-based solution-deposited devices and stacks.

Anisotropic Thermal Conductivity of Inkjet-Printed 2D Crystal Films: Role of the Microstructure and Interfaces

Two-dimensional (2D) materials are uniquely suited for highly anisotropic thermal transport, which is important in thermoelectrics, thermal barrier coatings, and heat spreaders. Solution-processed 2D materials are attractive for simple, low-cost, and large-scale fabrication of devices on, virtually, any substrate. However, to date, there are only few reports with contrasting results on the thermal conductivity of graphene films, while thermal transport has been hardly measured for other types of solution-processed 2D material films. In this work, inkjet-printed graphene, h-BN and MoS2 films are demonstrated with thermal conductivities of ∼10 Wm-1K-1 and ∼0.3 Wm-1K-1 along and across the basal plane, respectively, giving rise to an anisotropy of ∼30, hardly dependent on the material type and annealing treatment. First-principles calculations indicate that portion of the phonon spectrum is cut-off by the quality of the thermal contact for transport along the plane, yet the ultra-low conductivity across the plane is associated with high-transmissivity interfaces. These findings can drive the design of highly anisotropic 2D material films for heat management applications.

Inkjet printing of two-dimensional van der Waals materials: a new route towards emerging electronic device applications

Two-dimensional (2D) van der Waals (vdW) materials are considered one of the most promising candidates to realize emerging electrical applications. Although until recently, much effort has been dedicated to demonstrating high-performance single 2D vdW devices, associated with rapid progress in 2D vdW materials, demands for their large-scale practical applications have noticeably increased from a manufacturing perspective. Drop-on-demand inkjet printing can be the most feasible solution by exploiting the advantages of layered 2D contacts and advanced 2D vdW ink formulations. This review presents recent achievements in inkjet-printed 2D vdW material-based device applications. A brief introduction to 2D vdW materials and inkjet printing principles, followed by various ink formulation methods, is first presented. Then, the state-of-the-art inkjet-printed 2D vdW device applications and their remaining technical issues are highlighted. Finally, prospects and challenges to be overcome to demonstrate fully inkjet-printed, high-performance 2D vdW devices are also discussed.

Polyaromatic cores for the exfoliation of popular 2D materials

Two-dimensional (2D) nanomaterials have attracted interest from the scientific community due to their unique properties. The production of these materials has been carried out by diverse methodologies, the liquid phase exfoliation being the most promising one due to its simplicity and potential scalability. The use of several stabilizers allows to obtain dispersions of these 2D nanomaterials in solvents with low boiling points. Herein we describe a general exfoliation method for different 2D materials employing a biphasic water/dichloromethane system and two different (poly)aromatic hydrocarbons (PAHs). This method allows us to obtain dispersions of the exfoliated 2D materials with high concentrations in the organic solvent. Due to the low boiling point of dichloromethane, and therefore its easy removal, the obtained dispersions can be employed as additives for different composites. We corroborate that the exfoliation efficiency is improved due to the π-π and van der Waals interactions between the PAHs and the layers of the 2D materials.

Printable inks and deformable electronic array devices

Deformable printed electronic array devices are expected to revolutionize next-generation electronics. However, although remarkable technological advances in printable inks and deformable electronic array devices have recently been achieved, technical challenges remain to commercialize these technologies. In this review article a brief introduction to printing methods highlighting significant research studies on ink formation for conductors, semiconductors, and insulators is provided, and the structural design and successful printing strategies of deformable electronic array devices are described. Successful device demonstrations are presented in the applications of passive- and active-matrix array devices. Finally, perspectives and technological challenges to be achieved are pointed out to print practically available deformable devices.

Two-Dimensional Transition Metal Dichalcogenides Trigger Trained Immunity in Human Macrophages through Epigenetic and Metabolic Pathways

Trained immunity is a recently described phenomenon whereby cells of the innate immune system undergo long-term epigenetic and/or metabolic reprogramming following a short-term interaction with microbes or microbial products. Here, it is shown that 2D transition metal dichalcogenides (TMDs) trigger trained immunity in primary human monocyte-derived macrophages. First, aqueous dispersions of 2D crystal formulations of MoS₂ and WS₂ are tested, and no cytotoxicity is found despite avid uptake of these materials by macrophages. However, when macrophages are pre-exposed to TMDs, followed by a resting period, this causes a marked modulation of immune-specific gene expression upon subsequent challenge with a microbial agent (i.e., bacterial lipopolysaccharides). Specifically, MoS₂ triggers trained immunity through an epigenetic pathway insofar as the histone methyltransferase inhibitor methylthioadenosine reverses these effects. Furthermore, MoS₂ triggers an elevation of cyclic adenosine monophosphate (cAMP) levels in macrophages and increased glycolysis is also evidenced in cells subjected to MoS₂ training, pointing toward a metabolic rewiring of the cells. Importantly, it is observed that MoS₂ triggers the upregulation of Mo-dependent enzymes in macrophages, thus confirming that Mo is bioavailable in these cells. In conclusion, MoS₂ is identified as a novel inducer of trained immunity. Thus, TMDs could potentially be harnessed as immunomodulatory agents.

Friction Behavior and Structural Evolution of Hexagonal Boron Nitride: A Relation to Environmental Molecules Containing -OH Functional Group

Sliding contact experiments and first-principles calculations were performed to elucidate the roles of environmental molecules containing -OH functional groups on the friction behavior and structural evolution of hexagonal boron nitride (h-BN). A significant decrease in the friction coefficient (COF) is established by the physisorption and dissociative adsorption of molecules containing -OH functional groups on h-BN, compared with that in a H₂ or N₂ atmosphere. A key finding is the existence of two friction mechanisms to reconstruct the sliding interface for h-BN crystallites in humid air and carbon contaminant (CH₃OH and C₂H₅OH) atmospheres, which is verified by the friction behavior and morphologies of the wear track. There is a running-in period in the friction process to induce the formation of defects in h-BN in humid air, which facilitates dissociative adsorption of water molecules on h-BN. The formation of nanostructured water at defect sites will promote lamellar slip of h-BN crystal materials for friction reduction. In carbon contaminant environments, both molecules exhibit strong adsorption on the h-BN surface regardless of the presence of defects, thereby weakening the structural damage rate and enhancing the bearing capacity. C₂H₅OH molecules are more likely to dissociate and bind onto defect sites, endowing h-BN with high in-plane stress to form a coiled structure. h-BN in the annular or tubular form would exhibit a self-protective effect, facilitate incommensurate contact, and reduce the contact area to enhance lubrication. Our work may establish the fundamental basis for future applications of h-BN in new energy vehicles.

Aerosol-Printed MoS2 Ink as a High Sensitivity Humidity Sensor

Molybdenum disulfide (MoS2) is attractive for use in next-generation nanoelectronic devices and exhibits great potential for humidity sensing applications. Herein, MoS2 ink was successfully prepared via a simple exfoliation method by sonication. The structural and surface morphology of a deposited ink film was analyzed by scanning electron microscopy (SEM), Raman spectroscopy, and atomic force microscopy (AFM). The aerosol-printed MoS2 ink sensor has high sensitivity, with a conductivity increase by 6 orders of magnitude upon relative humidity increase from 10 to 95% at room temperature. The sensor also has fast response/recovery times and excellent repeatability. Possible mechanisms for the water-induced conductivity increase are discussed. An analytical model that encompasses two ionic conduction regimes, with a percolation transition to an insulating state below a low humidity threshold, describes the sensor response successfully. In conclusion, our work provides a low-cost and straightforward strategy for fabricating a high-performance humidity sensor and fundamental insights into the sensing mechanism.

Size selection and thin-film assembly of MoS2 elucidates thousandfold conductivity enhancement in few-layer nanosheet networks

Printed electronics based on liquid-exfoliated nanosheet networks are limited by inter-nanosheet junctions and thick films which hinder field-effect gating. Here, few-layer molybdenum disulfide nanosheets are assembled by Langmuir deposition into thin films, and size selection is shown to lead to a thousandfold conductivity enhancement with potential applicability to all nanosheet networks.

Ink-jet printing and drop-casting deposition of 2H-phase SnSe2and WSe2nanoflake assemblies for thermoelectric applications

The development of simple, scalable, and cost-effective methods to prepare Van der Waals materials for thermoelectric applications is a timely research field, whose potential and possibilities are still largely unexplored. In this work, we present a systematic study of ink-jet printing and drop-casting deposition of 2H phase SnSe₂and WSe₂nanoflake assemblies, obtained by liquid phase exfoliation, and their characterization in terms of electronic and thermoelectric properties. The choice of optimal annealing temperature and time is crucial for preserving phase purity and stoichiometry and for removing dry residues of ink solvents at inter-flake boundaries, while maximizing the sintering of nanoflakes. An additional pressing is beneficial to improve nanoflake orientation and packing, thus enhancing electric conductivity. In nanoflake assemblies deposited by drop casting and pressed at 1 GPa, we obtained thermoelectric power factors at room temperature up to 2.2 × 10^-4mW m^-1K^-2for SnSe₂and up to 3.0 × 10^-4mW m^-1K^-2for WSe₂.

Advances in Studies of Boron Nitride Nanosheets and Nanocomposites for Thermal Transport and Related Applications

Hexagonal boron nitride (h-BN) and exfoliated nanosheets (BNNs) not only resemble their carbon counterparts graphite and graphene nanosheets in structural configurations and many excellent materials characteristics, especially the ultra-high thermal conductivity, but also offer other unique properties such as being electrically insulating and extreme chemical stability and oxidation resistance even at elevated temperatures. In fact, BNNs as a special class of 2-D nanomaterials have been widely pursued for technological applications that are beyond the reach of their carbon counterparts. Highlighted in this article are significant recent advances in the development of more effective and efficient exfoliation techniques for high-quality BNNs, the understanding of their characteristic properties, and the use of BNNs in polymeric nanocomposites for thermally conductive yet electrically insulating materials and systems. Major challenges and opportunities for further advances in the relevant research field are also discussed.

Aqueous Inks of Pristine Graphene for 3D Printed Microsupercapacitors with High Capacitance

Three-dimensional (3D) printing is gaining importance as a sustainable route for the fabrication of high-performance energy storage devices. It enables the streamlined manufacture of devices with programmable geometry at different length scales down to micron-sized dimensions. Miniaturized energy storage devices are fundamental components for on-chip technologies to enable energy autonomy. In this work, we demonstrate 3D printed microsupercapacitor electrodes from aqueous inks of pristine graphene without the need of high temperature processing and functional additives. With an intrinsic electrical conductivity of ∼1370 S m^-1 and rationally designed architectures, the symmetric microsupercapacitors exhibit an exceptional areal capacitance of 1.57 F cm^-2 at 2 mA cm^-2 which is retained over 72% after repeated voltage holding tests. The areal power density (0.968 mW cm^-2) and areal energy density (51.2 μWh cm^-2) outperform the ones of previously reported carbon-based supercapacitors which have been either 3D or inkjet printed. Moreover, a current collector-free interdigitated microsupercapacitor combined with a gel electrolyte provides electrochemical performance approaching the one of devices with liquid-like ion transport properties. Our studies provide a sustainable and low-cost approach to fabricate efficient energy storage devices with programmable geometry.

In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability

Ion gel-based dielectrics have long been considered for enabling low-voltage operation in printed thin-film transistors (TFTs), but their compatibility with in-place printing (a streamlined, direct-write printing approach where devices never leave the printer mid- or post-process) remains unexplored. Here, we demonstrate a simple and rapid 4-step in-place printing procedure for producing low-voltage electrolyte-gated carbon nanotube (CNT) thin-film transistors at low temperature (80 °C). This process consists of the use of polymer-wrapped CNT inks for printed channels, silver nanowire inks for printed electrodes, and imidazolium-based ion gel inks for printed gate dielectrics. We find that the efficacy of rinsing CNT films and printing an ion gel in-place is optimized using an elevated platen temperature (as opposed to external rinsing or post-process annealing), where resultant devices exhibited on/off-current ratios exceeding 10³, mobilities exceeding 10 cm²V^-1s^-1, and gate hysteresis of only 0.1 V. Additionally, devices were tested under mechanical strain and long-term bias, showing exceptional flexibility and electrochemical stability over the course of 14-hour bias tests. The findings presented here widen the potential scope of print-in-place (PIP) devices and reveal new avenues of investigation for the improvement of bias stress stability in electrolyte-gated transistors.

Dispersant-assisted liquid-phase exfoliation of 2D materials beyond graphene

The extensive research on liquid-phase exfoliation (LPE) performed in the last 10 years has enabled a low cost and mass scalable approach to the successful production of a range of solution-processed 2-dimensional (2D) materials suitable for many applications, from composites to energy storage and printed electronics. However, direct LPE requires the use of specific solvents, which are typically toxic and expensive. Dispersant-assisted LPE allows us to overcome this problem by enabling production of solution processed 2D materials in a wider range of solvents, including water. This approach is based on the inclusion of an additive, typically an amphiphilic molecule, designed to interact with both the nanosheet and the solvent, enabling exfoliation and stabilization at the same time. This method has been extensively used for the LPE of graphene and has been discussed in many reviews, whilst little attention has been given to dispersant-assisted LPE of 2D materials beyond graphene. Considering the increasing number of 2D materials and their potential in many applications, from nanomedicine to energy storage and catalysis, this review focuses on the dispersant-assisted LPE of transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN) and less studied 2D materials. We first provide an introduction to the fundamentals of LPE and the type of dispersants that have been used for the production of graphene, we then discuss each class of 2D material, providing an overview on the concentration and properties of the nanosheets obtained. Finally, a perspective is given on some of the challenges that need to be addressed in this field of research.

Printed carbon nanotube thin-film transistors: progress on printable materials and the path to applications

Printing technologies have attracted significant attention owing to their potential use in the low-cost manufacturing of custom or large-area flexible electronics. Among the many printable electronic materials that have been explored, semiconducting carbon nanotubes (CNTs) have shown increasing promise based on their exceptional electrical and mechanical properties, relative stability in air, and compatibility with several printing techniques to form semiconducting thin films. These attractive attributes make printed CNT thin films promising for applications including, but not limited to, sensors and display backplanes - at the heart of which is electronics' most versatile device: the transistor. In this review, we present a summary of recent advancements in the field of printed carbon nanotube thin-film transistors (CNT-TFTs). In addition to an introduction of different printing techniques, together with their strengths and limitations, we discuss key aspects of ink/material selection and processing of various device components, including the CNT channels, contacts, and gate insulators. It is clear that printed CNT-TFTs are rapidly advancing, but there remain challenges, which are discussed along with current techniques to resolve them and future developments towards practical applications from these devices. There has been interest in low-cost, printable transistors for many years and the CNT-TFTs show great promise for delivering, but will not become a reality without further research advancement.

Fully inkjet-printed multilayered graphene-based flexible electrodes for repeatable electrochemical response

Graphene has proven to be useful in biosensing applications. However, one of the main hurdles with printed graphene-based electrodes is achieving repeatable electrochemical performance from one printed electrode to another. We have developed a consistent fabrication process to control the sheet resistance of inkjet-printed graphene electrodes, thereby accomplishing repeatable electrochemical performance. Herein, we investigated the electrochemical properties of multilayered graphene (MLG) electrodes fully inkjet-printed (IJP) on flexible Kapton substrates. The electrodes were fabricated by inkjet printing three materials – (1) a conductive silver ink for electrical contact, (2) an insulating dielectric ink, and (3) MLG ink as the sensing material. The selected materials and fabrication methods provided great control over the ink rheology and material deposition, which enabled stable and repeatable electrochemical response: bending tests revealed the electrochemical behavior of these sensors remained consistent over 1000 bend cycles. Due to the abundance of structural defects (e.g., edge defects) present in the exfoliated graphene platelets, cyclic voltammetry (CV) of the graphene electrodes showed good electron transfer (k = 1.125 × 10⁻² cm s⁻¹) with a detection limit (0.01 mM) for the ferric/ferrocyanide redox couple, [Fe(CN)₆]^−3/−4, which is comparable or superior to modified graphene or graphene oxide-based sensors. Additionally, the potentiometric response of the electrodes displayed good sensitivity over the pH range of 4–10. Moreover, a fully IJP three-electrode device (MLG, platinum, and Ag/AgCl) also showed quasi-reversibility compared to a single IJP MLG electrode device. These findings demonstrate significant promise for scalable fabrication of a flexible, low cost, and fully-IJP wearable sensor system needed for space, military, and commercial biosensing applications.

A fully inkjet printed and flexible multilayer graphene based three electrode device showed electrochemical reversibility.

Desolvation-Triggered Versatile Transfer-Printing of Pure BN Films with Thermal-Optical Dual Functionality

Although hexagonal boron nitride (BN) nanostructures have recently received significant attention due to their unique physical and chemical properties, their applications have been limited by a lack of processability and poor film quality. In this study, a versatile method to transfer-print high-quality BN films composed of densely stacked BN nanosheets based on a desolvation-induced adhesion switching (DIAS) mechanism is developed. It is shown that edge functionalization of BN sheets and rational selection of membrane surface energy combined with systematic control of solvation and desolvation status enable extensive tunability of interfacial interactions at BN-BN, BN-membrane, and BN-substrate boundaries. Therefore, without incorporating any additives in the BN film and applying any surface treatment on target substrates, DIAS achieves a near 100% transfer yield of pure BN films on diverse substrates, including substrates containing significant surface irregularities. The printed BNs demonstrate high optical transparency (>90%) and excellent thermal conductivity (>167 W m^-1 K^-1) for few-micrometer-thick films due to their dense and well-ordered microstructures. In addition to outstanding heat dissipation capability, substantial optical enhancement effects are confirmed for light-emitting, photoluminescent, and photovoltaic devices, demonstrating their remarkable promise for next-generation optoelectronic device platforms.

Hexagonal Boron Nitride-Enhanced Optically Transparent Polymer Dielectric Inks for Printable Electronics

Solution-processable thin-film dielectrics represent an important material family for large-area, fully-printed electronics. Yet, in recent years, it has seen only limited development, and has mostly remained confined to pure polymers. Although it is possible to achieve excellent printability, these polymers have low (≈2-5) dielectric constants (ε r ). There have been recent attempts to use solution-processed 2D hexagonal boron nitride (h-BN) as an alternative. However, the deposited h-BN flakes create porous thin-films, compromising their mechanical integrity, substrate adhesion, and susceptibility to moisture. These challenges are addressed by developing a "one-pot" formulation of polyurethane (PU)-based inks with h-BN nano-fillers. The approach enables coating of pinhole-free, flexible PU+h-BN dielectric thin-films. The h-BN dispersion concentration is optimized with respect to exfoliation yield, optical transparency, and thin-film uniformity. A maximum ε r ≈ 7.57 is achieved, a two-fold increase over pure PU, with only 0.7 vol% h-BN in the dielectric thin-film. A high optical transparency of ≈78.0% (≈0.65% variation) is measured across a 25 cm2 area for a 10 μm thick dielectric. The dielectric property of the composite is also consistent, with a measured areal capacitance variation of <8% across 64 printed capacitors. The formulation represents an optically transparent, flexible thin-film, with enhanced dielectric constant for printed electronics.

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a "channel array" approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 × 103 (up to 5 × 104) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

Heterostructures formed through abraded van der Waals materials

To fully exploit van der Waals materials and their vertically stacked heterostructures, new mass-scalable production routes which are low cost but preserve the high electronic and optical quality of the single crystals are required. Here, we demonstrate an approach to realise a variety of functional heterostructures based on van der Waals nanocrystal films produced through the mechanical abrasion of bulk powders. We find significant performance enhancements in abraded heterostructures compared to those fabricated through inkjet printing of nanocrystal dispersions. To highlight the simplicity, applicability and scalability of the device fabrication, we demonstrate a multitude of different functional heterostructures such as resistors, capacitors and photovoltaics. We also demonstrate the creation of energy harvesting devices, such as large area catalytically active coatings for the hydrogen evolution reaction and enhanced triboelectric nanogenerator performance in multilayer films. The ease of device production makes this a promising technological route for up-scalable films and heterostructures.

Low-cost, mass-scalable production routes which preserve the quality of the single crystals are required to up-scale van der Waals materials. Here, the authors demonstrate an approach to realise a variety of functional heterostructures based on van der Waals nanocrystal films produced through the mechanical abrasion of bulk powders.

Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

We report room temperature Hall mobility measurements, low temperature magnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO₂/Si substrates. We found that thermal annealing in vacuum at 450 °C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.3 Ω sq^-1 after annealing, and are n-type doped, with carrier concentrations in the low 10²⁰ cm^-3 range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm² V^-1 s^-1 for a 480 nm-thick film printed on SiO₂/Si. Low-frequency noise characterization shows a 1/f noise behavior and a Hooge parameter in the range of 0.1-1. These results represent the first in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.

Determining the Level and Location of Functional Groups on Few-Layer Graphene and Their Effect on the Mechanical Properties of Nanocomposites

Graphene is a highly desirable material for a variety of applications; in the case of nanocomposites, it can be functionalized and added as a nanofiller to alter the ultimate product properties, such as tensile strength. However, often the material properties of the functionalized graphene and the location of any chemical species, attached via different functionalization processes, are not known. Thus, it is not necessarily understood why improvements in product performance are achieved, which hinders the rate of product development. Here, a commercially available powder containing few-layer graphene (FLG) flakes is characterized before and after plasma or chemical functionalization with either nitrogen or oxygen species. A range of measurement techniques, including tip-enhanced Raman spectroscopy (TERS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), and NanoSIMS, were used to examine the physical and chemical changes in the FLG material at both the micro- and nanoscale. This is the first reported TERS imaging of commercially available FLG flakes of submicron lateral size, revealing the location of the defects (edge versus basal plane) and variations in the level of functionalization. Graphene-polymer composites were then produced, and the dispersion of the graphitic material in the matrix was visualized using ToF-SIMS. Finally, mechanical testing of the composites demonstrated that the final product performance could be enhanced but differed depending on the properties of the original graphitic material.

Protective Layers Based on Carbon Paint To Yield High-Quality Large-Area Molecular Junctions with Low Contact Resistance

A major obstacle for transforming large-area molecular junctions into a viable technology is the deposition of a top, metallic contact over the self-assembled monolayer (SAM) without chemically damaging the molecules and preventing an interface-limited charge transport. Often a thin conducting layer is softly deposited over the SAM to protect it during the deposition of the metal electrode which requires conditions under which organic molecules are not stable. We report a new protective layer based on carbon paint which is highly conductive and has metallic-like behavior. Junctions made of SAMs of n-alkanethiolates supported by Au were characterized with both dc and ac techniques, revealing that carbon paint protective layers provide a solution to three well-known challenges in molecular junctions: series resistance of the leads, poor interface conductance, and low effective contact area related to the roughness of the interfaces. Transport is constant with coherent tunneling down to 10 K, indicating the carbon paint does not add spurious thermally activated components. The junctions have both high reproducibility and good stability against bias stressing. Finally, normalized differential conductance analysis of the tunneling characteristics of the junctions as a function of molecular length reveals that the scaling voltage changes with molecular length, indicating a significant voltage drop on the molecules rather than on the molecule-electrode interface. There is a clear inverse dependence of the scaling voltage on length, which we deduced has a tunneling barrier height of close to 2 eV. The paper establishes the reliability of carbon paint protective layers and provides a procedure for discriminating genuine molecular effects from interfacial contributions.

Versatile printed microheaters to enable low-power thermal control in paper diagnostics

Reusable, low-power, low-cost, printed microheaters developed for practical use in in-field and point-of-care diagnostics.

Stumbling through the Research Wilderness, Standard Methods To Shine Light on Electrically Conductive Nanocomposites for Future Healthcare Monitoring

Electrically conductive nanocomposites are an exciting ever-expanding area of research that has yielded many versatile technologies for wearable health devices. Acting as strain-sensing materials, real-time medical diagnostic tools based on these materials may very well lead to a golden age of healthcare. Currently, the goal in research is to create a material that simultaneously has both a large gauge factor (G) and sensing range. However, a weakness in the area of electromechanical research is the lack of standardization in the reporting of the figure of merit (i.e., G) and the need for other intrinsic metrics to give researchers a more complete view of the research landscape of resistive-type sensors. A paradigm shift in the way in which data are reported is required, to push research in the right direction and to facilitate achieving research goals. Here, we report a standardized method for reporting strain-sensing performance and the introduction of the working factor (W) and the Young's modulus (Y) of a material as figures of merit for sensing materials. Using this standard method, we can define the benchmarks for an optimum sensing material (G > 7, W > 1, Y < 300 kPa) using limits set by standard commercial materials and the human body. Using extrapolated data from 200 publications normalized to this standard method, we can review what composite types meet these benchmark limits, what governs composite performances, the literary trends in composites, and the future prospects of research.

Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing

Semiconducting carbon nanotubes (CNTs) printed into thin films offer high electrical performance, significant mechanical stability, and compatibility with low-temperature processing. Yet, the implementation of low-temperature printed devices, such as CNT thin-film transistors (CNT-TFTs), has been hindered by relatively high process temperature requirements imposed by other device layers-dielectrics and contacts. In this work, we overcome temperature constraints and demonstrate 1D-2D thin-film transistors (1D-2D TFTs) in a low-temperature (maximum exposure ≤80 °C) full print-in-place process (i.e., no substrate removal from printer throughout the entire process) using an aerosol jet printer. Semiconducting 1D CNT channels are used with a 2D hexagonal boron nitride (h-BN) gate dielectric and traces of silver nanowires as the conductive electrodes, all deposited using the same printer. The aerosol jet-printed 2D h-BN films were realized via proper ink formulation, such as utilizing the binder hydroxypropyl methylcellulose, which suppresses redispersion between adjacent printed layers. In addition to an ON/OFF current ratio up to 3.5 × 10⁵, channel mobility up to 10.7 cm²·V^-1·s^-1, and low gate hysteresis, 1D-2D TFTs exhibit extraordinary mechanical stability under bending due to the nanoscale network structure of each layer, with minimal changes in performance after 1000 bending test cycles at 2.1% strain. It is also confirmed that none of the device layers require high-temperature treatment to realize optimal performance. These findings provide an attractive approach toward a cost-effective, direct-write realization of electronics.

NO2 and NH3 Sensing Characteristics of Inkjet Printing Graphene Gas Sensors

Graphene is a good candidate for filling the market requirements for cheap, high sensitivity, robust towards contamination, low noise, and low power consumption gas sensors, thanks to its unique properties, i.e., large surface, high mobility, and long-term stability. Inkjet printing is a cheap additive manufacturing method allowing fast, relatively precise and contactless deposition of a wide range of materials; it can be considered therefore the ideal technique for fast deposition of graphene films on thin substrates. In this paper, the sensitivity of graphene-based chemiresistor gas sensors, fabricated through inkjet printing, is investigated using different concentrations of graphene in the inks. Samples have been produced and characterized in terms of response towards humidity, nitrogen dioxide, and ammonia. The presented results highlight the importance of tuning the layer thickness and achieving good film homogeneity in order to maximize the sensitivity of the sensor.

Wearable solid-state capacitors based on two-dimensional material all-textile heterostructures

Two-dimensional (2D) materials are a rapidly growing area of interest for wearable electronics, due to their flexible and unique electrical properties. All-textile-based wearable electronic components are key to enable future wearable electronics. Single component electrical elements have been demonstrated; however heterostructure-based assemblies, combining electrically conductive and dielectric textiles such as all-textile capacitors are currently missing. Here we demonstrate a superhydrophobic conducting fabric with a sheet resistance R_s∼ 2.16 kΩ□^-1, and a pinhole-free dielectric fabric with a relative permittivity ε_r∼ 2.35 enabled by graphene and hexagonal boron nitride inks, respectively. The different fabrics are then integrated to engineer the first example of an all-textile-based capacitive heterostructure with an effective capacitance C ∼ 26 pF cm^-2 and a flexibility of ∼1 cm bending radius. The capacitor sustains 20 cycles of repeated washing and more than 100 cycles of repeated bending. Finally, an AC low-pass filter with a cut-off frequency of ∼15 kHz is integrated by combining the conductive polyester and the capacitor. These results pave the way toward all-textile vertically integrated electronic devices.