1
|
Toom SR, Sato T, Milne Z, Bernal RA, Jeng YR, Muratore C, Glavin NR, Carpick RW, Schall JD. Nanoscale Adhesion and Material Transfer at 2D MoS 2-MoS 2 Interfaces Elucidated by In Situ Transmission Electron Microscopy and Atomistic Simulations. ACS APPLIED MATERIALS & INTERFACES 2024; 16:30506-30520. [PMID: 38805354 DOI: 10.1021/acsami.4c03208] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Low-dimensional materials, such as MoS2, hold promise for use in a host of emerging applications, including flexible, wearable sensors due to their unique electrical, thermal, optical, mechanical, and tribological properties. The implementation of such devices requires an understanding of adhesive phenomena at the interfaces between these materials. Here, we describe combined nanoscale in situ transmission electron microscopy (TEM)/atomic force microscopy (AFM) experiments and simulations measuring the work of adhesion (Wadh) between self-mated contacts of ultrathin nominally amorphous and nanocrystalline MoS2 films deposited on Si scanning probe tips. A customized TEM/AFM nanoindenter permitted high-resolution imaging and force measurements in situ. The Wadh values for nanocrystalline and nominally amorphous MoS2 were 604 ± 323 mJ/m2 and 932 ± 647 mJ/m2, respectively, significantly higher than previously reported values for mechanically exfoliated MoS2 single crystals. Closely matched molecular dynamics (MD) simulations show that these high values can be explained by bonding between the opposing surfaces at defects such as grain boundaries. Simulations show that as grain size decreases, the number of bonds formed, the Wadh and its variability all increase, further supporting that interfacial covalent bond formation causes high adhesion. In some cases, sliding between delaminated MoS2 flakes during separation is observed, which further increases the Wadh and the range of adhesive interaction. These results indicate that for low adhesion, the MoS2 grains should be large relative to the contact area to limit the opportunity for bonding, whereas small grains may be beneficial, where high adhesion is needed to prevent device delamination in flexible systems.
Collapse
Affiliation(s)
- Sathwik Reddy Toom
- Department of Mechanical Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411, United States
| | - Takaaki Sato
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Zachary Milne
- Gatan, Inc., Pleasanton, California 94588, United States
| | - Rodrigo A Bernal
- Department of Mechanical Engineering, University of Texas, Dallas, Richardson, Texas 75080, United States
| | - Yeau-Ren Jeng
- Department of Biomedical Engineering, National Cheng Kung University in Tainan, Tainan 70101, Taiwan
| | - Christopher Muratore
- Department of Chemical and Materials Engineering, University of Dayton, Dayton, Ohio 45469, United States
| | - Nicholas R Glavin
- Materials and Manufacturing Directorate, US Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Robert W Carpick
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - J David Schall
- Department of Mechanical Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411, United States
| |
Collapse
|
2
|
Lin W, Su W, Lin T, Wang S, Chen J, Gao A, Lyu Y, Xiao D, Zhang Q, Gu L. New Insight into Bulk Structural Degradation of High-Voltage LiCoO 2 at 4.55 V. NANO LETTERS 2024. [PMID: 38842462 DOI: 10.1021/acs.nanolett.4c00688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
The aggravated mechanical and structural degradation of layered oxide cathode materials upon high-voltage charging invariably causes fast capacity fading, but the underlying degradation mechanisms remain elusive. Here we report a new type of mechanical degradation through the formation of a kink band in a Mg and Ti co-doped LiCoO2 cathode charged to 4.55 V (vs Li/Li+). The local stress accommodated by the kink band can impede crack propagation, improving the structural integrity in a highly delithiated state. Additionally, machine-learning-aided atomic-resolution imaging reveals that the formation of kink bands is often accompanied by the transformation from the O3 to O1 phase, which is energetically favorable as demonstrated by first-principles calculations. Our results provide new insights into the mechanical degradation mechanism of high-voltage LiCoO2 and the coupling between electrochemically triggered mechanical failures and structural transition, which may provide valuable guidance for enhancing the electrochemical performance of high-voltage layered oxide cathode materials for lithium-ion batteries.
Collapse
Affiliation(s)
- Weiguang Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Wei Su
- Materials Genome Institute, Shanghai University, Shanghai 200444, P. R. China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Shiyu Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jing Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Ang Gao
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Yingchun Lyu
- Materials Genome Institute, Shanghai University, Shanghai 200444, P. R. China
| | - Dongdong Xiao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| |
Collapse
|
3
|
Aggarwal R, Saini D, Mitra R, Sonkar SK, Sonker AK, Westman G. From Bulk Molybdenum Disulfide (MoS 2) to Suspensions of Exfoliated MoS 2 in an Aqueous Medium and Their Applications. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:9855-9872. [PMID: 38687994 DOI: 10.1021/acs.langmuir.3c03116] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Two-dimensional (2D) layered materials like graphene, transition-metal dichalcogenides (TMDs), boron nitrides, etc., exhibit unique and fascinating properties, such as high surface-to-volume ratio, inherent mechanical flexibility and robustness, tunable bandgap, and high carrier mobility, which makes them an apt candidate for flexible electronics with low consumption of power. Because of these properties, they are in tremendous demand for advancement in energy, environmental, and biomedical sectors developed through various technologies. The production and scalability of these materials must be sustainable and ecofriendly to utilize these unique properties in the real world. Here, in this current review, we review molybdenum disulfide (MoS2 nanosheets) in detail, focusing on exfoliated MoS2 in water and the applicability of aqueous MoS2 suspensions in various fields. The exfoliation of MoS2 results in the formation of single or few-layered MoS2. Therefore, this Review focuses on the few layers of exfoliated MoS2 that have the additional properties of 2D layered materials and higher excellent compatibility for integration than existing conventional Si tools. Hence, a few layers of exfoliated MoS2 are widely explored in biosensing, gas sensing, catalysis, photodetectors, energy storage devices, a light-emitting diode (LED), adsorption, etc. This review covers the numerous methodologies to exfoliate MoS2, focusing on the various published methodologies to obtain nanosheets of MoS2 from water solutions and their use.
Collapse
Affiliation(s)
- Ruchi Aggarwal
- Department of Chemistry, Malaviya National Institute of Technology, Jaipur 302017, India
| | - Deepika Saini
- Department of Chemistry, Malaviya National Institute of Technology, Jaipur 302017, India
| | - Richa Mitra
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
- Low Temperature Laboratory, Department of Applied Physics, Aalto University, Espoo 02150, Finland
| | - Sumit Kumar Sonkar
- Department of Chemistry, Malaviya National Institute of Technology, Jaipur 302017, India
| | - Amit Kumar Sonker
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Gothenburg, 41296, Sweden
- Wallenberg Wood Science Centre (WWSC), Chalmers University of Technology, Gothenburg, 41296, Sweden
- BA5409 cellulose films and coatings, VTT Technical Research Center of Finland, Tietotie 4E, Espoo 02150, Finland
| | - Gunnar Westman
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Gothenburg, 41296, Sweden
- Wallenberg Wood Science Centre (WWSC), Chalmers University of Technology, Gothenburg, 41296, Sweden
| |
Collapse
|
4
|
Gui C, Zhang Z, Li Z, Luo C, Xia J, Wu X, Chu J. Deep learning analysis on transmission electron microscope imaging of atomic defects in two-dimensional materials. iScience 2023; 26:107982. [PMID: 37810254 PMCID: PMC10551659 DOI: 10.1016/j.isci.2023.107982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/10/2023] Open
Abstract
Defects are prevalent in two-dimensional (2D) materials due to thermal equilibrium and processing kinetics. The presence of various defect types can affect material properties significantly. With the development of the advanced transmission electron microscopy (TEM), the property-related structures could be investigated in multiple dimensions. It produces TEM datasets containing a large amount of information. Traditional data analysis is influenced by the subjectivity of researchers, and manual analysis is inefficient and imprecise. Recent developments in deep learning provide robust methods for the quantitative identification of defects in 2D materials efficiently and precisely. Taking advantage of big data, it breaks the limitations of TEM as a local characterization tool, making TEM an intelligent macroscopic analysis method. In this review, the recent developments in the TEM data analysis of defects in 2D materials using deep learning technology are summarized. Initially, an in-depth examination of the distinctions between TEM and natural images is presented. Subsequently, a comprehensive exploration of TEM data analysis ensues, encompassing denoising, point defects, line defects, planar defects, quantitative analysis, and applications. Furthermore, an exhaustive assessment of the significant obstacles encountered in the accurate identification of distinct structures is also provided.
Collapse
Affiliation(s)
- Chen Gui
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
| | - Zhihao Zhang
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
| | - Zongyi Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- JCET SEMICONDUCTOR INTEGRATION (SHAOXING) CO, LTD, Shaoxing, Zhejiang 312000, China
| | - Chen Luo
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai 200433, China. Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Jiang Xia
- JCET SEMICONDUCTOR INTEGRATION (SHAOXING) CO, LTD, Shaoxing, Zhejiang 312000, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Junhao Chu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Institute of Optoelectronics, Fudan University, Shanghai 200433, China. Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| |
Collapse
|
5
|
Liu C, Hongo K, Maezono R, Zhang J, Oshima Y. Stiffer Bonding of Armchair Edge in Single-Layer Molybdenum Disulfide Nanoribbons. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303477. [PMID: 37697633 PMCID: PMC10602518 DOI: 10.1002/advs.202303477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 08/02/2023] [Indexed: 09/13/2023]
Abstract
The physical and chemical properties of nanoribbon edges are important for characterizing nanoribbons and applying them in electronic devices, sensors, and catalysts. The mechanical response of molybdenum disulfide nanoribbons, which is an important issue for their application in thin resonators, is expected to be affected by the edge structure, albeit this result is not yet being reported. In this work, the width-dependent Young's modulus is precisely measured in single-layer molybdenum disulfide nanoribbons with armchair edges using the developed nanomechanical measurement based on a transmission electron microscope. The Young's modulus remains constant at ≈166 GPa above 3 nm width, but is inversely proportional to the width below 3 nm, suggesting a higher bond stiffness for the armchair edges. Supporting the experimental results, the density functional theory calculations show that buckling causes electron transfer from the Mo atoms at the edges to the S atoms on both sides to increase the Coulomb attraction.
Collapse
Affiliation(s)
- Chunmeng Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Educationand School of Physics & MicroelectronicsZhengzhou UniversityZhengzhou450052China
- School of Materials ScienceJapan Advanced Institute of Science and Technology1‐1 AsahidaiNomiIshikawa923‐1292Japan
- Center of Advanced Analysis & Gene SequencingZhengzhou UniversityZhengzhou450001China
| | - Kenta Hongo
- Research Center for Advanced Computing InfrastructureJapan Advanced Institute of Science and TechnologyNomiIshikawa923‐1292Japan
| | - Ryo Maezono
- School of Information ScienceJapan Advanced Institute of Science and TechnologyNomiIshikawa923‐1292Japan
| | - Jiaqi Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Educationand School of Physics & MicroelectronicsZhengzhou UniversityZhengzhou450052China
- School of Materials ScienceJapan Advanced Institute of Science and Technology1‐1 AsahidaiNomiIshikawa923‐1292Japan
- Institute of Quantum Materials and PhysicsHenan Academy of SciencesZhengzhou450046China
| | - Yoshifumi Oshima
- School of Materials ScienceJapan Advanced Institute of Science and Technology1‐1 AsahidaiNomiIshikawa923‐1292Japan
| |
Collapse
|
6
|
Lee M, Seung H, Kwon JI, Choi MK, Kim DH, Choi C. Nanomaterial-Based Synaptic Optoelectronic Devices for In-Sensor Preprocessing of Image Data. ACS OMEGA 2023; 8:5209-5224. [PMID: 36816688 PMCID: PMC9933102 DOI: 10.1021/acsomega.3c00440] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2023] [Accepted: 01/27/2023] [Indexed: 06/18/2023]
Abstract
With the advance in information technologies involving machine vision applications, the demand for energy- and time-efficient acquisition, transfer, and processing of a large amount of image data has rapidly increased. However, current architectures of the machine vision system have inherent limitations in terms of power consumption and data latency owing to the physical isolation of image sensors and processors. Meanwhile, synaptic optoelectronic devices that exhibit photoresponse similar to the behaviors of the human synapse enable in-sensor preprocessing, which makes the front-end part of the image recognition process more efficient. Herein, we review recent progress in the development of synaptic optoelectronic devices using functional nanomaterials and their unique interfacial characteristics. First, we provide an overview of representative functional nanomaterials and device configurations for the synaptic optoelectronic devices. Then, we discuss the underlying physics of each nanomaterial in the synaptic optoelectronic device and explain related device characteristics that allow for the in-sensor preprocessing. We also discuss advantages achieved by the application of the synaptic optoelectronic devices to image preprocessing, such as contrast enhancement and image filtering. Finally, we conclude this review and present a short prospect.
Collapse
Affiliation(s)
- Minkyung Lee
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
| | - Hyojin Seung
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
| | - Jong Ik Kwon
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Moon Kee Choi
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Dae-Hyeong Kim
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
- Department
of Materials Science and Engineering, Seoul
National University, Seoul 08826, Republic of Korea
| | - Changsoon Choi
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
| |
Collapse
|
7
|
Moazzami Gudarzi M, Aboutalebi SH. Mapping the Binding Energy of Layered Crystals to Macroscopic Observables. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204001. [PMID: 36253141 PMCID: PMC9685473 DOI: 10.1002/advs.202204001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Revised: 09/13/2022] [Indexed: 06/16/2023]
Abstract
Van der Waals (vdW) integration of two dimensional (2D) crystals into functional heterostructures emerges as a powerful tool to design new materials with fine-tuned physical properties at an unprecedented precision. The intermolecular forces governing the assembly of vdW heterostructures are investigated by first-principles models, yet translating the outcome of these models to macroscopic observables in layered crystals is missing. Establishing this connection is, therefore, crucial for ultimately designing advanced materials of choice-tailoring the composition to functional device properties. Herein, components from both vdW and non-vdW forces are integrated to build a comprehensive framework that can quantitatively describe the dynamics of these forces in action. Specifically, it is shown that the optical band gap of layered crystals possesses a peculiar ionic character that works as a quantitative indicator of non-vdW forces. Using these two components, it is then described why only a narrow range of exfoliation energies for this class of materials is observed. These findings unlock the microscopic origin of universal binding energy in layered crystals and provide a general protocol to identify and synthesize new crystals to regulate vdW coupling in the next generation of heterostructures.
Collapse
Affiliation(s)
- Mohsen Moazzami Gudarzi
- National Graphene InstituteUniversity of ManchesterManchesterM13 9PLUK
- Department of MaterialsSchool of Natural SciencesThe University of ManchesterManchesterM13 9PLUK
| | - Seyed Hamed Aboutalebi
- Condensed Matter National LaboratoryInstitute for Research in Fundamental SciencesTehran19395‐5531Iran
| |
Collapse
|
8
|
Kosnan MA, Azam MA, Safie NE, Munawar RF, Takasaki A. Recent Progress of Electrode Architecture for MXene/MoS 2 Supercapacitor: Preparation Methods and Characterizations. MICROMACHINES 2022; 13:mi13111837. [PMID: 36363860 PMCID: PMC9695226 DOI: 10.3390/mi13111837] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Revised: 10/18/2022] [Accepted: 10/21/2022] [Indexed: 05/31/2023]
Abstract
Since their discovery, MXenes have conferred various intriguing features because of their distinctive structures. Focus has been placed on using MXenes in electrochemical energy storage including a supercapacitor showing significant and promising development. However, like other 2D materials, MXene layers unavoidably experience stacking agglomeration because of its great van der Waals forces, which causes a significant loss of electrochemically active sites. With the help of MoS2, a better MXene-based electrodecan is planned to fabricate supercapacitors with the remarkable electrochemical performance. The synthesis of MXene/MoS2 and the ground effects of supercapacitors are currently being analysed by many researchers internationally. The performance of commercial supercapacitors might be improved via electrode architecture. This analysis will support the design of MXene and MoS2 hybrid electrodes for highly effective supercapacitors. Improved electrode capacitance, voltage window and energy density are discussed in this literature study. With a focus on the most recent electrochemical performance of both MXene and MoS2-based electrodes and devices, this review summarises recent developments in materials synthesis and its characterisation. It also helps to identify the difficulties and fresh possibilities MXenes MoS2 and its hybrid heterostructure in this developing field of energy storage. Future choices for constructing supercapacitors will benefit from this review. This review examines the newest developments in MXene/MoS2 supercapacitors, primarily focusing on compiling literature from 2017 through 2022. This review also presents an overview of the design (structures), recent developments, and challenges of the emerging electrode materials, with thoughts on how well such materials function electrochemically in supercapacitors.
Collapse
Affiliation(s)
- Muhammad Akmal Kosnan
- Fakulti Kejuruteraan Pembuatan, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, Durian Tunggal, Melaka 76100, Malaysia
| | - Mohd Asyadi Azam
- Fakulti Kejuruteraan Pembuatan, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, Durian Tunggal, Melaka 76100, Malaysia
| | - Nur Ezyanie Safie
- Fakulti Kejuruteraan Pembuatan, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, Durian Tunggal, Melaka 76100, Malaysia
| | - Rose Farahiyan Munawar
- Fakulti Kejuruteraan Pembuatan, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, Durian Tunggal, Melaka 76100, Malaysia
| | - Akito Takasaki
- Department of Engineering Science and Mechanics, Shibaura Institute of Technology, 3 Chome-7-5 Toyosu, Koto City, Tokyo 135-8548, Japan
| |
Collapse
|
9
|
Rasche B, Brunner J, Schramm T, Ghimire MP, Nitzsche U, Büchner B, Giraud R, Richter M, Dufouleur J. Determination of Cleavage Energy and Efficient Nanostructuring of Layered Materials by Atomic Force Microscopy. NANO LETTERS 2022; 22:3550-3556. [PMID: 35427144 DOI: 10.1021/acs.nanolett.1c04868] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A method is presented to use atomic force microscopy to measure the cleavage energy of van der Waals materials and similar quasi-two-dimensional materials. The cleavage energy of graphite is measured to be 0.36 J/m2, in good agreement with literature data. The same method yields a cleavage energy of 0.6 J/m2 for MoS2 as a representative of the dichalcogenides. In the case of the weak topological insulator Bi14Rh3I9 no cleavage energy is obtained, although cleavage is successful with an adapted approach. The cleavage energies of these materials are evaluated by means of density-functional calculations and literature data. This further validates the presented method and sets an upper limit of about 0.7 J/m2 to the cleavage energy that can be measured by the present setup. In addition, this method can be used as a tool for manipulating exfoliated flakes, prior to or after contacting, which may open a new route for the fabrication of nanostructures.
Collapse
Affiliation(s)
- Bertold Rasche
- Department of Chemistry, University of Cologne, 50939 Cologne, Germany
| | - Julius Brunner
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
| | - Tim Schramm
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
| | - Madhav Prasad Ghimire
- Central Department of Physics, Tribhuvan University, Kirtipur 44613, Kathmandu, Nepal
| | - Ulrike Nitzsche
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
| | - Bernd Büchner
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
- Department of Physics, TU Dresden, D-01062 Dresden, Germany
| | - Romain Giraud
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
- Université Grenoble Alpes, CNRS, CEA, Grenoble-INP, Spintec, F-38000 Grenoble, France
| | - Manuel Richter
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
- Dresden Center for Computational Materials Science (DCMS), TU Dresden, D-01062 Dresden, Germany
| | - Joseph Dufouleur
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
- Center for Transport and Devices, TU Dresden, D-01062 Dresden, Germany
| |
Collapse
|
10
|
Zhang C, Larionov KV, Firestein KL, Fernando JFS, Lewis CE, Sorokin PB, Golberg DV. Optomechanical Properties of MoSe 2 Nanosheets as Revealed by In Situ Transmission Electron Microscopy. NANO LETTERS 2022; 22:673-679. [PMID: 35007088 DOI: 10.1021/acs.nanolett.1c03796] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Free-standing few-layered MoSe2 nanosheet stacks optoelectronic signatures are analyzed by using light compatible in situ transmission electron microscopy (TEM) utilizing an optical TEM holder allowing for the simultaneous mechanical deformation, electrical probing and light illumination of a sample. Two types of deformation, namely, (i) bending of nanosheets perpendicular to their basal atomic planes and (ii) edge deformation parallel to the basal atomic planes, lead to two distinctly different optomechanical performances of the nanosheet stacks. The former deformation induces a stable but rather marginal increase in photocurrent, whereas the latter mode is prone to unstable nonsystematic photocurrent value changes and a red-shifted photocurrent spectrum. The experimental results are verified by ab initio calculations using density functional theory (DFT).
Collapse
Affiliation(s)
- Chao Zhang
- Centre for Material Science and School of Chemistry and Physics, Queensland University of Technology (QUT), 2 George Street, Brisbane, Queensland 4000, Australia
| | - Konstantin V Larionov
- National University of Science and Technology MISIS, 4 Leninsky Prospect, Moscow 119049, Russian Federation
- Moscow Institute of Physics and Technology, 9 Institutskiy Pereulok, Dolgoprudny, Moscow Region 141701, Russian Federation
| | - Konstantin L Firestein
- Centre for Material Science and School of Chemistry and Physics, Queensland University of Technology (QUT), 2 George Street, Brisbane, Queensland 4000, Australia
| | - Joseph F S Fernando
- Centre for Material Science and School of Chemistry and Physics, Queensland University of Technology (QUT), 2 George Street, Brisbane, Queensland 4000, Australia
| | - Courtney-Elyce Lewis
- Centre for Material Science and School of Chemistry and Physics, Queensland University of Technology (QUT), 2 George Street, Brisbane, Queensland 4000, Australia
| | - Pavel B Sorokin
- National University of Science and Technology MISIS, 4 Leninsky Prospect, Moscow 119049, Russian Federation
- Moscow Institute of Physics and Technology, 9 Institutskiy Pereulok, Dolgoprudny, Moscow Region 141701, Russian Federation
| | - Dmitri V Golberg
- Centre for Material Science and School of Chemistry and Physics, Queensland University of Technology (QUT), 2 George Street, Brisbane, Queensland 4000, Australia
| |
Collapse
|
11
|
Mechanical sensors based on two-dimensional materials: Sensing mechanisms, structural designs and wearable applications. iScience 2022; 25:103728. [PMID: 35072014 PMCID: PMC8762477 DOI: 10.1016/j.isci.2021.103728] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022] Open
Abstract
Compared with bulk materials, atomically thin two-dimensional (2D) crystals possess a range of unique mechanical properties, including relatively high in-plane stiffness and large bending flexibility. The atomic 2D building blocks can be reassembled into precisely designed heterogeneous composite structures of various geometries with customized mechanical sensing behaviors. Due to their small specific density, high flexibility, and environmental adaptability, mechanical sensors based on 2D materials can conform to soft and curved surfaces, thus providing suitable solutions for functional applications in future wearable devices. In this review, we summarize the latest developments in mechanical sensors based on 2D materials from the perspective of function-oriented applications. First, typical mechanical sensing mechanisms are introduced. Second, we attempt to establish a correspondence between typical structure designs and the performance/multi-functions of the devices. Afterward, several particularly promising areas for potential applications are discussed, following which we present perspectives on current challenges and future opportunities
Collapse
|
12
|
Li J, Lin C, Weng M, Qiu Y, Chen P, Yang K, Huang W, Hong Y, Li J, Zhang M, Dong C, Zhao W, Xu Z, Wang X, Xu K, Sun J, Pan F. Structural origin of the high-voltage instability of lithium cobalt oxide. NATURE NANOTECHNOLOGY 2021; 16:599-605. [PMID: 33619408 DOI: 10.1038/s41565-021-00855-x] [Citation(s) in RCA: 58] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2020] [Accepted: 01/15/2021] [Indexed: 05/21/2023]
Abstract
Layered lithium cobalt oxide (LiCoO2, LCO) is the most successful commercial cathode material in lithium-ion batteries. However, its notable structural instability at potentials higher than 4.35 V (versus Li/Li+) constitutes the major barrier to accessing its theoretical capacity of 274 mAh g-1. Although a few high-voltage LCO (H-LCO) materials have been discovered and commercialized, the structural origin of their stability has remained difficult to identify. Here, using a three-dimensional continuous rotation electron diffraction method assisted by auxiliary high-resolution transmission electron microscopy, we investigate the structural differences at the atomistic level between two commercial LCO materials: a normal LCO (N-LCO) and a H-LCO. These powerful tools reveal that the curvature of the cobalt oxide layers occurring near the surface dictates the structural stability of the material at high potentials and, in turn, the electrochemical performances. Backed up by theoretical calculations, this atomistic understanding of the structure-performance relationship for layered LCO materials provides useful guidelines for future design of new cathode materials with superior structural stability at high voltages.
Collapse
Affiliation(s)
- Jianyuan Li
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen, China
- College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Cong Lin
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen, China.
- College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
| | - Mouyi Weng
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen, China
| | - Yi Qiu
- College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Pohua Chen
- College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Kai Yang
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen, China
| | - Weiyuan Huang
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen, China
| | - Yuexian Hong
- College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Jian Li
- College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Mingjian Zhang
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen, China
| | - Cheng Dong
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen, China
| | - Wenguang Zhao
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen, China
| | - Zhi Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Xi Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing, China
| | - Kang Xu
- Battery Science Branch, US Army Research Laboratory, Adelphi, MA, USA.
| | - Junliang Sun
- College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
| | - Feng Pan
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen, China.
| |
Collapse
|
13
|
Cao P, Wu J. Self-Assembly of MoS 2 Monolayer Sheets by Desulfurization. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021; 37:4971-4983. [PMID: 33858139 DOI: 10.1021/acs.langmuir.1c00369] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Self-assembled structures of two-dimensional (2D) materials exhibit novel physical properties distinct from those of their parent materials. Herein, the critical role of desulfurization on the self-assembled structural morphologies of molybdenum disulfide (MoS2) monolayer sheets is explored using molecular dynamics (MD) simulations. MD results show that there are differences in the atomic energetics of MoS2 monolayer sheets with different desulfurization contents. Both free-standing and substrate-hosted MoS2 monolayer sheets show diversity in structural morphologies, for example, flat plane structures, wrinkles, nanotubes, and folds, depending on the desulfurization contents, planar dimensions, and ratios of length to width of MoS2 sheets. Particularly, at the critical desulfurization content, they can roll up into nanotubes, which is in good agreement with previous experimental observations. Importantly, these observed differences in the molecular structural morphologies between free-standing and substrate-hosted MoS2 monolayer sheets can be attributed to interatomic interactions and interlayer van der Waals interactions. Furthermore, MD results have demonstrated that the surface-driven stability of MoS2 structures can be indicated by the desulfurization contents on one surface of MoS2 monolayer sheets, and the self-assembly of MoS2 monolayer sheets by desulfurization can emerge to adjust their surface-driven stability. The study provides important atomic insights into tuning the self-assembling structural morphologies of 2D materials through defect engineering in the future science and engineering applications.
Collapse
Affiliation(s)
- Pinqiang Cao
- School of Resource and Environmental Engineering, Wuhan University of Science and Technology, Wuhan 430081, P. R. China
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Jiujiang Research Institute, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, P. R. China
| | - Jianyang Wu
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Jiujiang Research Institute, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, P. R. China
| |
Collapse
|
14
|
Castilho CJ, Li D, Xie Y, Gao H, Hurt RH. Shear Failure in Supported Two-Dimensional Nanosheet Van der Waals Thin Films. CARBON 2021; 173:410-418. [PMID: 33223559 PMCID: PMC7678926 DOI: 10.1016/j.carbon.2020.10.079] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Liquid-phase deposition of exfoliated 2D nanosheets is the basis for emerging technologies that include writable electronic inks, molecular barriers, selective membranes, and protective coatings against fouling or corrosion. These nanosheet thin films have complex internal structures that are discontinuous assemblies of irregularly tiled micron-scale sheets held together by van der Waals (vdW) forces. On stiff substrates, nanosheet vdW films are stable to many common stresses, but can fail by internal delamination under shear stress associated with handling or abrasion. This "re-exfoliation" pathway is an intrinsic feature of stacked vdW films and can limit nanosheet-based technologies. Here we investigate the shear stability of graphene oxide and MoSe2 nanosheet vdW films through lap shear experiments on polymer-nanosheet-polymer laminates. These sandwich laminate structures fail in mixed cohesive and interfacial mode with critical shear forces from 40 - 140 kPa and fracture energies ranging from 0.2 - 6 J/m2. Surprisingly these energies are higher than delamination energies reported for smooth peeling of ordered stacks of continuous 2D sheets, which we propose is due to energy dissipation and chaotic crack motion during nanosheet film disassembly at the crack tip. Experiment results also show that film thickness plays a key role in determining critical shear force (maximum load before failure) and dissipated energy for different nanosheet vdW films. Using a mechanical model with an edge crack in the thin nanosheet film, we propose a shear-to-tensile failure mode transition to explain a maximum in critical shear force for graphene oxide films but not MoSe2 films. This transition reflects a weakening of the substrate confinement effect and increasing rotational deformation near the film edge as the film thickness increases. For graphene oxide, the critical shear force can be increased by electrostatic cross-linking achieved through interlayer incorporation of metal cations. These results have important implications for the stability of functional devices that employ 2D nanosheet coatings.
Collapse
Affiliation(s)
| | - Dong Li
- School of Engineering, Brown University, Providence, RI, USA
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore
| | - Yiheng Xie
- School of Engineering, Brown University, Providence, RI, USA
| | - Huajian Gao
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore
| | - Robert H. Hurt
- School of Engineering, Brown University, Providence, RI, USA
| |
Collapse
|
15
|
Yu B, Hou L, Wang S, Huang H. The adhesion of a mica nanolayer on a single-layer graphene supported by SiO 2 substrate characterised in air. NANOTECHNOLOGY 2021; 32:045701. [PMID: 33027772 DOI: 10.1088/1361-6528/abbf25] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional nanolayers have found increasingly widespread applications in modern flexible electronic devices. Their adhesion with neighbouring layers can significantly affect the mechanical stability and the reliability of those devices. However, the measurement of such adhesion has been a great challenge. In this work, we develop a new and simple methodology to measure the interfacial adhesion between a mica nanolayer (MNL) and a single-layer graphene (SLG) supported by a SiO2 substrate. The method is based on the well-known Obreimoff method but integrated with innovative nanomanipulation and profile measuring approaches. Our study shows that the adhesion energy of MNLs on the SLG/SiO2 substrate system is considerably lower than that on the SiO2 substrate alone. Quantitative analyses reveal that the wrinkles formed on the SLG can considerably lower the adhesion. This outcome is of technological value as the adhesion maybe tailored by controlling the wrinkle formation in the graphene layer in a flexible electronic device.
Collapse
Affiliation(s)
- Bowen Yu
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane QLD, 4072, Australia
| | - Lizhen Hou
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane QLD, 4072, Australia
- School of Physics and Electronics, Hunan Normal University, Changsha 410081, People's Republic of China
| | - Shiliang Wang
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane QLD, 4072, Australia
- School of Physics and Electronics, Central South University, Changsha 410083, People's Republic of China
| | - Han Huang
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane QLD, 4072, Australia
| |
Collapse
|
16
|
Direct measurements of interfacial adhesion in 2D materials and van der Waals heterostructures in ambient air. Nat Commun 2020; 11:5607. [PMID: 33154376 PMCID: PMC7645779 DOI: 10.1038/s41467-020-19411-7] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2019] [Accepted: 10/07/2020] [Indexed: 11/08/2022] Open
Abstract
Abstract
Interfacial adhesion energy is a fundamental property of two-dimensional (2D) layered materials and van der Waals heterostructures due to their intrinsic ultrahigh surface to volume ratio, making adhesion forces very strong in many processes related to fabrication, integration and performance of devices incorporating 2D crystals. However, direct quantitative characterization of adhesion behavior of fresh and aged homo/heterointerfaces at nanoscale has remained elusive. Here, we use an atomic force microscopy technique to report precise adhesion measurements in ambient air through well-defined interactions of tip-attached 2D crystal nanomesas with 2D crystal and SiOx substrates. We quantify how different levels of short-range dispersive and long-range electrostatic interactions respond to airborne contaminants and humidity upon thermal annealing. We show that a simple but very effective precooling treatment can protect 2D crystal substrates against the airborne contaminants and thus boost the adhesion level at the interface of similar and dissimilar van der Waals heterostructures. Our combined experimental and computational analysis also reveals a distinctive interfacial behavior in transition metal dichalcogenides and graphite/SiOx heterostructures beyond the widely accepted van der Waals interaction.
Collapse
|
17
|
Wu G, Lou H, Liu K, Lin X. The study of bending properties of monolayer MoS 2 in non-collinear electrodes using first principles theory. Phys Chem Chem Phys 2020; 22:21888-21892. [PMID: 32968749 DOI: 10.1039/d0cp02714f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In this work, we report the theoretical maximum bending angle of MoS2 devices using the creative non-collinear electrodes method based on the first principles theory. The results show that the device with 1T-phase MoS2 electrodes sandwiching N-type MoS2 in a zigzag direction has a better conducting behavior as compared with P-type in an armchair direction. The conductance decreases less than 15% when the angle between the two electrodes is less than 45° in both the equilibrium state and non-equilibrium state because of the continuous resonant response between the two electrodes and the little deformed band structure. This work provides guidance and a physical mechanism for achieving flexible MoS2 transistors that are reliable at a sub-nm bending radius.
Collapse
Affiliation(s)
- Gengshu Wu
- The Shenzhen Key Lab of Advanced Electron Device and Integration, ECE, PKUSZ, Shenzhen, China.
| | - Haijun Lou
- Micro-Satellite Research Center, Zhejiang University, Hangzhou, Zhejiang, China.
| | - Kai Liu
- The Shenzhen Key Lab of Advanced Electron Device and Integration, ECE, PKUSZ, Shenzhen, China.
| | - Xinnan Lin
- The Shenzhen Key Lab of Advanced Electron Device and Integration, ECE, PKUSZ, Shenzhen, China.
| |
Collapse
|
18
|
Liu X, Yu ZG, Zhang G, Zhang YW. Remarkably high thermal-driven MoS 2 grain boundary migration mobility and its implications on defect healing. NANOSCALE 2020; 12:17746-17753. [PMID: 32815948 DOI: 10.1039/d0nr03871g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for many important device applications, such as field effect transistors and sensors, which require a robust control of defect type, density, and distribution. However, how to control the defect type, density, and distribution in these materials is still a challenge. In this study, we explore the kinetics and dynamics of four types of grain boundaries (GBs) in monolayer MoS2, which are composed of S-polar dislocation (S5|7), Mo-polar dislocation (Mo5|7), dislocation-double S vacancy complex (S4|6), and dislocation-double S interstitial complex (S6|8), respectively. Our study shows that these four GBs in monolayer MoS2 exhibit a great disparity in their migration behavior. More specifically, the S4|6 and S6|8 GBs possess a much higher migration mobility than the S5|7 and Mo5|7 GBs under the same thermal fluctuations or temperature gradient. Interestingly, the S4|6 and S6|8 GBs follow an abnormal relationship with temperature, due to the change in defect configurations with temperature. Our study further shows that the remarkably high mobilities of the S4|6 and Mo6|8 GBs may enable the reactions of GBs, leading to the annihilation and reduction of defect density. In addition, the movement of GBs in MoS2 under a temperature gradient field can cause defect redistribution, which in turn changes the thermal conductivity. The present study not only deepens our understanding of the dynamic evolution of GBs in TMDs, but also presents new opportunities to engineer GBs for novel electronic applications.
Collapse
Affiliation(s)
- Xiangjun Liu
- Institute of Micro-/Nano Electromechanical System, College of Mechanical Engineering, Donghua University, Shanghai, China.
| | | | | | | |
Collapse
|
19
|
Liu J, Zeng J, Zhu C, Miao J, Huang Y, Heinz H. Interpretable molecular models for molybdenum disulfide and insight into selective peptide recognition. Chem Sci 2020; 11:8708-8722. [PMID: 34094188 PMCID: PMC8162032 DOI: 10.1039/d0sc01443e] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/10/2020] [Accepted: 07/16/2020] [Indexed: 12/14/2022] Open
Abstract
Molybdenum disulfide (MoS2) is a layered material with outstanding electrical and optical properties. Numerous studies evaluate the performance in sensors, catalysts, batteries, and composites that can benefit from guidance by simulations in all-atom resolution. However, molecular simulations remain difficult due to lack of reliable models. We introduce an interpretable force field for MoS2 with record performance that reproduces structural, interfacial, and mechanical properties in 0.1% to 5% agreement with experiments. The model overcomes structural instability, deviations in interfacial and mechanical properties by several 100%, and empirical fitting protocols in earlier models. It is compatible with several force fields for molecular dynamics simulation, including the interface force field (IFF), CVFF, DREIDING, PCFF, COMPASS, CHARMM, AMBER, and OPLS-AA. The parameters capture polar covalent bonding, X-ray structure, cleavage energy, infrared spectra, bending stability, bulk modulus, Young's modulus, and contact angles with polar and nonpolar solvents. We utilized the models to uncover the binding mechanism of peptides to the MoS2 basal plane. The binding strength of several 7mer and 8mer peptides scales linearly with surface contact and replacement of surface-bound water molecules, and is tunable in a wide range from -86 to -6 kcal mol-1. The binding selectivity is multifactorial, including major contributions by van-der-Waals coordination and charge matching of certain side groups, orientation of hydrophilic side chains towards water, and conformation flexibility. We explain the relative attraction and role of the 20 amino acids using computational and experimental data. The force field can be used to screen and interpret the assembly of MoS2-based nanomaterials and electrolyte interfaces up to a billion atoms with high accuracy, including multiscale simulations from the quantum scale to the microscale.
Collapse
Affiliation(s)
- Juan Liu
- Department of Chemical and Biological Engineering, University of Colorado- Boulder Boulder CO 80309 USA
| | - Jin Zeng
- Department of Chemical and Biological Engineering, University of Colorado- Boulder Boulder CO 80309 USA
| | - Cheng Zhu
- Department of Chemical and Biological Engineering, University of Colorado- Boulder Boulder CO 80309 USA
| | - Jianwei Miao
- Department of Physics and Astronomy, University of California Los Angeles California 90095 USA
- California NanoSystems Institute, University of California, Los Angeles CA 90095 USA
| | - Yu Huang
- California NanoSystems Institute, University of California, Los Angeles CA 90095 USA
- Department of Materials Science and Engineering, University of California, Los Angeles 90095 USA
| | - Hendrik Heinz
- Department of Chemical and Biological Engineering, University of Colorado- Boulder Boulder CO 80309 USA
| |
Collapse
|
20
|
Zhang J, Ishizuka K, Tomitori M, Arai T, Oshima Y. Atomic scale mechanics explored by in situ transmission electron microscopy with a quartz length-extension resonator as a force sensor. NANOTECHNOLOGY 2020; 31:205706. [PMID: 32000148 DOI: 10.1088/1361-6528/ab71b9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
An in situ transmission electron microscopy (TEM) holder equipped with a quartz length-extension resonator (LER) as a force sensor was developed to examine the elastic properties of atomic-scale materials. This holder is a useful means of studying the effects of size and crystal orientation on the properties of nanomaterials via measurements of mechanical responses while simultaneously observing atomic structures. The spring constants of nanocontacts (NCs) were determined based on shifts in the resonance frequency of the LER during TEM observations. The LER spring constant and sensitivity (the ratio of the LER induced charge to its oscillation amplitude), both of which are crucial to mechanical evaluation of NCs, were precisely calibrated from an analysis of TEM images along with the output of the electronics attached to the holder. The mechanical stability of the newly developed TEM holder was sufficient to allow chains of Pt atoms in the NC to be maintained for at least several seconds. The minimum measurable NC spring constant was on the order of 1 N m-1, comparable to that associated with a single atomic bond. The spring constant of a NC composed of a single-bonded chain of two Pt atoms was found to be 13.2 N m-1. This holder therefore has significant potential with regard to the characterization of nanoscale mechanical properties.
Collapse
Affiliation(s)
- Jiaqi Zhang
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
| | | | | | | | | |
Collapse
|
21
|
Li L, Zheng W, Ma C, Zhao H, Jiang F, Ouyang Y, Zheng B, Fu X, Fan P, Zheng M, Li Y, Xiao Y, Cao W, Jiang Y, Zhu X, Zhuang X, Pan A. Wavelength-Tunable Interlayer Exciton Emission at the Near-Infrared Region in van der Waals Semiconductor Heterostructures. NANO LETTERS 2020; 20:3361-3368. [PMID: 32233493 DOI: 10.1021/acs.nanolett.0c00258] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
The wavelength-tunable interlayer exciton (IE) from layered semiconductor materials has not been achieved. van der Waals heterobilayers constructed using single-layer transition metal dichalcogenides can produce continuously changed interlayer band gaps, which is a feasible approach to achieve tunable IEs. In this work, we design a series of van der Waals heterostructures composed of a WSe2 layer with a fixed band gap and another WS2(1-x)Se2x alloy layer with continuously changed band gaps. The existence of IEs and tunable interlayer band gaps in these heterobilayers is verified by steady-state photoluminescence experiments. By tuning the composition of the WS2(1-x)Se2x alloy layers, we realized a very wide tunable band gap range of 1.97-1.40 eV with a wavelength-tunable IE emission range of 1.52-1.40 eV from the heterobilayers. The time-resolved photoluminescence experiments show the IE emission lifetimes over nanoseconds.
Collapse
Affiliation(s)
- Lihui Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Weihao Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Hepeng Zhao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Feng Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yu Ouyang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xianwei Fu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Peng Fan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Min Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yu Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Wenpeng Cao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ying Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xiujuan Zhuang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| |
Collapse
|
22
|
Liu Y, Xu Y, Ji Y, Zhang H. Monolayer Bi 2Se 3-xTe x: novel two-dimensional semiconductors with excellent stability and high electron mobility. Phys Chem Chem Phys 2020; 22:9685-9692. [PMID: 32329500 DOI: 10.1039/d0cp00729c] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional materials play a vital role in next-generation microelectronics, optoelectronics and flexible electronics due to their novel physical properties caused by quantum-confinement effects. In this work, we investigate the stability and the possibility of exfoliation of monolayer Bi2Se3-xTex (x = 0, 1, 2) using first-principles calculations. Our calculations show that these materials are indirect bandgap semiconductors, and the elastic modulus is smaller than other conventional materials, which indicates better flexibility. We find that the electron mobility of monolayer Bi2SeTe2 along the armchair direction is higher than that of black phosphorene, reaching 2708 cm2 V-1 s-1, and the electron mobility of monolayer Bi2Se3 along the zigzag direction is about 24 times larger than the hole mobility. The remarkable electron mobilities and highly anisotropic properties of these new monolayers pave the way for future applications in high-speed (opto)electronic devices.
Collapse
Affiliation(s)
- Yifan Liu
- School of Science, Shandong Jianzhu University, Jinan 250101, Shandong, China.
| | | | | | | |
Collapse
|
23
|
Zheng F, Thi QH, Wong LW, Deng Q, Ly TH, Zhao J. Critical Stable Length in Wrinkles of Two-Dimensional Materials. ACS NANO 2020; 14:2137-2144. [PMID: 31951371 DOI: 10.1021/acsnano.9b08928] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The emergent two-dimensional (2D) materials are atomically thin and ultraflexible, promising for a variety of miniaturized, high-performance, and flexible devices in applications. On one hand, the ultrahigh flexibility causes problems: the prevalent wrinkles in 2D materials may undermine the ideal properties and create barriers in fabrication, processing, and quality control of materials. On the other hand, in some cases the wrinkles are used for the architecturing of surface texture and the modulation of physical/chemical properties. Therefore, a thorough understanding of the mechanism and stability of wrinkles is highly needed. Herein, we report a critical length for stabilizing the wrinkles in 2D materials, observed in the wrinkling and wrinkle elimination processes upon thermal annealing as well as by our in situ TEM manipulations on individual wrinkles, which directly capture the evolving wrinkles with variable lengths. The experiments, mechanical modeling, and self-consistent charge density functional tight binding (SCC-DFTB) simulations reveal that a minimum critical length is required for stabilizing the wrinkles in 2D materials. Wrinkles with lengths below a critical value are unstable and removable by thermal annealing, while wrinkles with lengths above a critical value are self-stabilized by van der Waals interactions. It additionally confirms the pronounced frictional effects in wrinkles with lengths above critical value during dynamical movement or sliding.
Collapse
Affiliation(s)
- Fangyuan Zheng
- Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong , China
- The Hong Kong Polytechnic University Shenzhen Research Institute , Shenzhen 518000 , China
| | - Quoc Huy Thi
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong , China
- City University of Hong Kong Shenzhen Research Institute , Shenzhen 518000 , China
| | - Lok Wing Wong
- Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong , China
- The Hong Kong Polytechnic University Shenzhen Research Institute , Shenzhen 518000 , China
| | - Qingming Deng
- Physics Department and Jiangsu Key Laboratory for Chemistry of Low-Dimensional Materials , Huaiyin Normal University , Huaian 223300 , China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong , China
- City University of Hong Kong Shenzhen Research Institute , Shenzhen 518000 , China
| | - Jiong Zhao
- Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong , China
- The Hong Kong Polytechnic University Shenzhen Research Institute , Shenzhen 518000 , China
| |
Collapse
|
24
|
Tai KL, Huang CW, Cai RF, Huang GM, Tseng YT, Chen J, Wu WW. Atomic-Scale Fabrication of In-Plane Heterojunctions of Few-Layer MoS 2 via In Situ Scanning Transmission Electron Microscopy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1905516. [PMID: 31825564 DOI: 10.1002/smll.201905516] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2019] [Revised: 11/14/2019] [Indexed: 06/10/2023]
Abstract
Layered MoS2 is a prospective candidate for use in energy harvesting, valleytronics, and nanoelectronics. Its properties strongly related to its stacking configuration and the number of layers. Due to its atomically thin nature, understanding the atomic-level and structural modifications of 2D transition metal dichalcogenides is still underdeveloped, particularly the spatial control and selective precision. Therefore, the development of nanofabrication techniques is essential. Here, an atomic-scale approach used to sculpt 2D few-layer MoS2 into lateral heterojunctions via in situ scanning/transmission electron microscopy (STEM/TEM) is developed. The dynamic evolution is tracked using ultrafast and high-resolution filming equipment. The assembly behaviors inherent to few-layer 2D-materials are observed during the process and included the following: scrolling, folding, etching, and restructuring. Atomic resolution STEM is employed to identify the layer variation and stacking sequence for this new 2D-architecture. Subsequent energy-dispersive X-ray spectroscopy and electron energy loss spectroscopy analyses are performed to corroborate the elemental distribution. This sculpting technique that is established allows for the formation of sub-10 nm features, produces diverse nanostructures, and preserves the crystallinity of the material. The lateral heterointerfaces created in this study also pave the way for the design of quantum-relevant geometries, flexible optoelectronics, and energy storage devices.
Collapse
Affiliation(s)
- Kuo-Lun Tai
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
| | - Chun-Wei Huang
- Material and Chemical Research Laboratories, Nanotechnology Research Center, Industrial Technology Research Institute, Hsinchu, 310, Taiwan
| | - Ren-Fong Cai
- Material and Chemical Research Laboratories, Nanotechnology Research Center, Industrial Technology Research Institute, Hsinchu, 310, Taiwan
| | - Guan-Min Huang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
| | - Yi-Tang Tseng
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
| | - Jun Chen
- Department of Materials, University of Oxford, OX1 2JD, Oxford, UK
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu City, 300, Taiwan
- Center for the Intelligent Semiconductor Nano-system Technology Research, National Chiao Tung University, Hsinchu, 300, Taiwan
| |
Collapse
|
25
|
Chen S, Gao J, Srinivasan BM, Zhang G, Yang M, Chai J, Wang S, Chi D, Zhang YW. Revealing the Grain Boundary Formation Mechanism and Kinetics during Polycrystalline MoS 2 Growth. ACS APPLIED MATERIALS & INTERFACES 2019; 11:46090-46100. [PMID: 31714053 DOI: 10.1021/acsami.9b15654] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Controllable synthesis of MoS2 with desired grain morphology via chemical vapor deposition (CVD) or physical vapor deposition (PVD) remains a challenge. Hence, it is important to understand polycrystalline growth of MoS2 and further provide guidelines for its CVD/PVD growth. Here, we formulate a kinetic Monte Carlo (kMC) model aiming at predicting the grain boundary (GB) formation in the CVD/PVD growth of polycrystalline MoS2. In the kMC model, the grain growth is via kink nucleation and propagation, whose energetic parameters and initial nucleus details are either from first-principles calculations or from experiments. Using the kMC model, we perform extensive simulations to predict the GB formation by using two, three, four, and five initial nuclei and compare the simulation results with previous experimental results. The obtained GB morphologies are in an excellent agreement with those experimental results. These agreements suggest that the proposed kMC model can correctly capture the mechanism and kinetics of GB formation. In particular, we reveal that the formation of smooth/rough GB is dictated by the two growth vectors for the kink propagation at the two associated grain edges, which is validated by our high-resolution scanning transmission electron microscopy images for PVD growth of MoS2 grains. Besides, we have made predictions beyond reproducing experimental observations, including the growth with artificially designed nuclei, the morphology transformation by tuning the Mo and S sources, and the formation of high-quality single-crystalline monolayer MoS2 by using single-crystalline substrates with vicinal steps. Our kMC model may serve as a powerful predictive tool for the CVD/PVD growth of monolayer MoS2 with desired GB configurations.
Collapse
Affiliation(s)
- Shuai Chen
- Institute of High Performance Computing, A*STAR , Singapore 138632
| | - Junfeng Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams , Dalian University of Technology, Ministry of Education , Dalian 116024 , People's Republic of China
| | | | - Gang Zhang
- Institute of High Performance Computing, A*STAR , Singapore 138632
| | - Ming Yang
- Institute of Materials Research and Engineering, A*STAR , Singapore 138634
| | - Jianwei Chai
- Institute of Materials Research and Engineering, A*STAR , Singapore 138634
| | - Shijie Wang
- Institute of Materials Research and Engineering, A*STAR , Singapore 138634
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, A*STAR , Singapore 138634
| | - Yong-Wei Zhang
- Institute of High Performance Computing, A*STAR , Singapore 138632
| |
Collapse
|
26
|
Nevalaita J, Koskinen P. Stability limits of elemental 2D metals in graphene pores. NANOSCALE 2019; 11:22019-22024. [PMID: 31713567 DOI: 10.1039/c9nr08533e] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) materials can be used as stabilizing templates for exotic nanostructures, including pore-stabilized, free-standing patches of elemental metal monolayers. Although these patches represent metal clusters under extreme conditions and are thus bound for investigations, they are poorly understood as their energetic stability trends and the most promising elements remain unknown. Here, using density-functional theory simulations and the liquid drop model to explore the properties of 45 elemental metal candidates, we identify metals that enable the largest and most stable patches. Simulations show that pores can stabilize patches up to ∼8 nm2 areas and that the most prominent candidate in a graphene template is Cu. The results, which are generalizable to templates also beyond graphene, provide encouragement for further, even more resolute experimental pursuit of 2D metals.
Collapse
Affiliation(s)
- Janne Nevalaita
- Nanoscience Center, Department of Physics, University of Jyväskylä, 40014 Jyväskylä, Finland.
| | - Pekka Koskinen
- Nanoscience Center, Department of Physics, University of Jyväskylä, 40014 Jyväskylä, Finland.
| |
Collapse
|
27
|
Stagi L, Ren J, Innocenzi P. From 2-D to 0-D Boron Nitride Materials, The Next Challenge. MATERIALS (BASEL, SWITZERLAND) 2019; 12:E3905. [PMID: 31779207 PMCID: PMC6926581 DOI: 10.3390/ma12233905] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/08/2019] [Revised: 11/18/2019] [Accepted: 11/22/2019] [Indexed: 12/04/2022]
Abstract
The discovery of graphene has paved the way for intense research into 2D materials which is expected to have a tremendous impact on our knowledge of material properties in small dimensions. Among other materials, boron nitride (BN) nanomaterials have shown remarkable features with the possibility of being used in a large variety of devices. Photonics, aerospace, and medicine are just some of the possible fields where BN has been successfully employed. Poor scalability represents, however, a primary limit of boron nitride. Techniques to limit the number of defects, obtaining large area sheets and the production of significant amounts of homogenous 2D materials are still at an early stage. In most cases, the synthesis process governs defect formation. It is of utmost importance, therefore, to achieve a deep understanding of the mechanism behind the creation of these defects. We reviewed some of the most recent studies on 2D and 0D boron nitride materials. Starting with the theoretical works which describe the correlations between structure and defects, we critically described the main BN synthesis routes and the properties of the final materials. The main results are summarized to present a general outlook on the current state of the art in this field.
Collapse
Affiliation(s)
| | | | - Plinio Innocenzi
- Laboratorio di Scienza dei Materiali e Nanotecnologie, CR-INSTM, Dipartimento di Chimica e Farmacia, Università di Sassari, Via Vienna 2, 07100 Sassari, Italy; (L.S.); (J.R.)
| |
Collapse
|
28
|
Extraction of magnetic circular dichroism effects from blended mixture of magnetic linear dichroism signals in the cobalt/Scotch tape system. Sci Rep 2019; 9:17192. [PMID: 31748587 PMCID: PMC6868135 DOI: 10.1038/s41598-019-53880-1] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2019] [Accepted: 11/06/2019] [Indexed: 01/23/2023] Open
Abstract
Circular dichroism (CD) signals revealed in some materials may arise from different origins during measurements. Magnetic field dependent CD (MCD) emanating from the spin-polarized band provides direct insight into the spin-spin interband transitions in magnetic materials. On the contrary, natural CD effects which are artefactual signals resulting from the linear polarization (LP) components during the polarization modulation with a photo-elastic modulator in anisotropic polymer systems were usually observed. There is no simple method to reliably distinguish MCD effect due to spin polarized band structures from natural CD effect, which limits our understanding of the magnetic material/polymer hybrid structures. This paper aims to introduce a general strategy of averaging out the magnetic linear dichroism (MLD) contributions due to the anisotropic structure and disentangling MCD signal(s) from natural MCD signal(s). We demonstrate the effectiveness of separating MCD from natural MCD using rotational MCD measurement and presented the results of a sample with Co thin film on polymer Scotch tape (unplasticized polyvinyl chloride) glued on a quartz substrate. We demonstrate that the proposed method can be used as an effective tool in disentangling MCD and natural MCD effects, and it opens prospects to study the magnetic material /polymer hybrid systems.
Collapse
|
29
|
Zhang C, Tan J, Pan Y, Cai X, Zou X, Cheng HM, Liu B. Mass production of 2D materials by intermediate-assisted grinding exfoliation. Natl Sci Rev 2019; 7:324-332. [PMID: 34692048 PMCID: PMC8288955 DOI: 10.1093/nsr/nwz156] [Citation(s) in RCA: 38] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2019] [Revised: 09/17/2019] [Accepted: 09/17/2019] [Indexed: 11/22/2022] Open
Abstract
The scalable and high-efficiency production of 2D materials is a prerequisite to their commercial use. Currently, only graphene and graphene oxide can be produced on a ton scale, and the inability to produce other 2D materials on such a large scale hinders their technological applications. Here we report a grinding exfoliation method that uses micro-particles as force intermediates to resolve applied compressive forces into a multitude of small shear forces, inducing the highly efficient exfoliation of layer materials. The method, referred to as intermediate-assisted grinding exfoliation (iMAGE), can be used for the large-scale production of many 2D materials. As an example, we have exfoliated bulk h-BN into 2D h-BN with large flake sizes, high quality and structural integrity, with a high exfoliation yield of 67%, a high production rate of 0.3 g h−1 and a low energy consumption of 3.01 × 106 J g−1. The production rate and energy consumption are one to two orders of magnitude better than previous results. Besides h-BN, this iMAGE technology has been used to exfoliate various layer materials such as graphite, black phosphorus, transition metal dichalcogenides, and metal oxides, proving its universality. Molybdenite concentrate, a natural low-cost and abundant mineral, was used as a demo for the large-scale exfoliation production of 2D MoS2 flakes. Our work indicates the huge potential of the iMAGE method to produce large amounts of various 2D materials, which paves the way for their commercial application.
Collapse
Affiliation(s)
- Chi Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yikun Pan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Xingke Cai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK
- Corresponding author. E-mail:
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Corresponding author. E-mail:
| |
Collapse
|
30
|
Wang H, Zhang H, Tang D, Goto K, Watanabe I, Kitazawa H, Kawai M, Mamiya H, Fujita D. Stress dependence of indentation modulus for carbon fiber in polymer composite. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2019; 20:412-420. [PMID: 31068987 PMCID: PMC6493271 DOI: 10.1080/14686996.2019.1600202] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/22/2019] [Revised: 03/24/2019] [Accepted: 03/24/2019] [Indexed: 06/09/2023]
Abstract
Elastic modulus measured through atomic force microscopy (AFM)-based indentation on single carbon fiber (CF) is found with dependence on lateral applied stress. An in situ indentation experiment inside a high-resolution transmission electron microscope was performed to quantitatively understand this phenomenon by observing microstructure change in the indented area. Change of graphitic basal plane misalignment angle during indentation was linked to a continuous change of modulus with the help of finite element simulation. The established relationship between modulus and indentation force was further used to calculate residual stress distribution in CF imbedded in a CF reinforced polymer composite using the AFM indentation technique. The stress-induced formation of nanoscale defects in the CF and their transformation into fracture were directly characterized.
Collapse
Affiliation(s)
- Hongxin Wang
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Tsukuba, Japan
| | - Han Zhang
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Tsukuba, Japan
| | - Daiming Tang
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenta Goto
- Research Center for Structural Material, National Institute for Materials Science, Tsukuba, Japan
| | - Ikumu Watanabe
- Research Center for Structural Material, National Institute for Materials Science, Tsukuba, Japan
| | - Hideaki Kitazawa
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Tsukuba, Japan
| | - Masamichi Kawai
- Systems and Information Engineering, University of Tsukuba, Tsukuba, Japan
| | - Hiroaki Mamiya
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Tsukuba, Japan
| | - Daisuke Fujita
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Tsukuba, Japan
| |
Collapse
|
31
|
Jin Q, Jiang S, Zhao Y, Wang D, Qiu J, Tang DM, Tan J, Sun DM, Hou PX, Chen XQ, Tai K, Gao N, Liu C, Cheng HM, Jiang X. Flexible layer-structured Bi 2Te 3 thermoelectric on a carbon nanotube scaffold. NATURE MATERIALS 2019; 18:62-68. [PMID: 30455446 DOI: 10.1038/s41563-018-0217-z] [Citation(s) in RCA: 109] [Impact Index Per Article: 21.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2018] [Accepted: 10/04/2018] [Indexed: 05/28/2023]
Abstract
Inorganic chalcogenides are traditional high-performance thermoelectric materials. However, they suffer from intrinsic brittleness and it is very difficult to obtain materials with both high thermoelectric ability and good flexibility. Here, we report a flexible thermoelectric material comprising highly ordered Bi2Te3 nanocrystals anchored on a single-walled carbon nanotube (SWCNT) network, where a crystallographic relationship exists between the Bi2Te3 <[Formula: see text]> orientation and SWCNT bundle axis. This material has a power factor of ~1,600 μW m-1 K-2 at room temperature, decreasing to 1,100 μW m-1 K-2 at 473 K. With a low in-plane lattice thermal conductivity of 0.26 ± 0.03 W m-1 K-1, a maximum thermoelectric figure of merit (ZT) of 0.89 at room temperature is achieved, originating from a strong phonon scattering effect. The origin of the excellent flexibility and thermoelectric performance of the Bi2Te3-SWCNT material is attributed, by experimental and computational evidence, to its crystal orientation, interface and nanopore structure. Our results provide insight into the design and fabrication of high-performance flexible thermoelectric materials.
Collapse
Affiliation(s)
- Qun Jin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- University of Chinese Academy of Sciences, Shenyang, China
| | - Song Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- University of Chinese Academy of Sciences, Shenyang, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
| | - Yang Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Dong Wang
- Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Jianhang Qiu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Dai-Ming Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
- World Premier International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
| | - Jun Tan
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Kaiping Tai
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China.
| | - Ning Gao
- Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China.
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China.
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
- Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, China
| | - Xin Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
- Institute of Materials Engineering, University of Siegen, Siegen, Germany
| |
Collapse
|
32
|
Cao J, Wang Y, Shi J, Chai J, Cai K. Initial Relative Position Influencing Self-Assembly of a Black Phosphorus Ribbon on a CNT. Int J Mol Sci 2018; 19:ijms19124085. [PMID: 30562978 PMCID: PMC6320985 DOI: 10.3390/ijms19124085] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2018] [Revised: 12/08/2018] [Accepted: 12/11/2018] [Indexed: 11/18/2022] Open
Abstract
It is difficult to obtain a nanotube from phosphorus with a 3sp2 electron configuration by chemical synthesis. However, a physical fabrication approach, such as self-assembly, is worth trying. In an experiment, when using a carbon nanotube (CNT) to trigger self-assembly of a black phosphorus (BP) ribbon, the final configuration of the BP component may be sensitive to the initial relative position of the CNT to the BP ribbon. For instance, using the same CNT with different initial relative positions to the BP ribbon, the BP ribbon may finally become a nanotube, or a scroll, or just wind upon the CNT, or escape from the CNT, etc. In this study, the sensitivity is investigated using molecular dynamics simulations. Numerical results illustrate some essentials for potential fabrication of a BP nanotube from ribbon.
Collapse
Affiliation(s)
- Jing Cao
- State Key Laboratory of Eco-hydraulics in Northwest Arid Region of China, Xi'an University of Technology, Xi'an 710048, China.
- State Key Laboratory of Geo-Information Engineering, Xi'an 710048, China.
| | - Yixuan Wang
- State Key Laboratory of Eco-hydraulics in Northwest Arid Region of China, Xi'an University of Technology, Xi'an 710048, China.
| | - Jiao Shi
- Key Laboratory of Agricultural Soil and Water Engineering in Arid and Semiarid Areas, Ministry of Education, Northwest Agriculture and Forestry University, Yangling 712100, China.
- State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China.
| | - Junrui Chai
- State Key Laboratory of Eco-hydraulics in Northwest Arid Region of China, Xi'an University of Technology, Xi'an 710048, China.
| | - Kun Cai
- Centre for Innovative Structures and Materials, School of Engineering, Royal Melbourne Institue of Technology University, Melbourne 3001, Australia.
| |
Collapse
|
33
|
Wang Q, Li J, Liang Y, Nie Y, Wang B. KAgSe: A New Two-Dimensional Efficient Photovoltaic Material with Layer-Independent Behaviors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:41670-41677. [PMID: 30384582 DOI: 10.1021/acsami.8b16505] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Recent advances in the development of two-dimensional (2D) materials have stimulated people's interest and enthusiasm to discover new kinds of 2D functional materials. In this paper, we propose a novel 2D layered semiconductor KAgSe using the first-principles calculation method, which displays excellent photovoltaic properties with proper direct band gap and significant carrier mobility. By evaluating the cohesive energy, vibrational phonon spectrum, and temporal evolution of the total energy at a high temperature of 500 K, the KAgSe monolayer is proved to be stable. Finite cleavage energy comparable to that of black phosphorus implies the feasibility of mechanical exfoliation of a KAgSe monolayer from the bulk. Layered KAgSe shows a ∼1.5 eV direct band gap, which is roughly independent of the number of layers. Remarkable optical absorption coefficients in the visible light region and significant carrier mobilities reveal a favorable application prospect of layered KAgSe in photovoltaic devices. Especially, the layer-independent optical absorption provides enormous convenience and less difficulty in experimental fabrication of photoelectronic devices which are based on finite layer KAgSe. To further explore the photovoltaic behaviors, the polarization angle-related photocurrent is evaluated for the KAgSe monolayer-based nanodevice by irradiating a beam of linearly polarized light to the scattering region. Moreover, large photon responsivity and external quantum efficiency are also obtained for the KAgSe monolayer.
Collapse
Affiliation(s)
- Qiang Wang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, College of Electronic Science and Technology , Shenzhen University , Shenzhen 518060 , People's Republic of China
- Institute of Theoretical Physics, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics , Shanxi University , Taiyuan 030006 , People's Republic of China
| | - Jianwei Li
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, College of Electronic Science and Technology , Shenzhen University , Shenzhen 518060 , People's Republic of China
| | - Yan Liang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , 250100 Jinan , People's Republic of China
| | - Yihang Nie
- Institute of Theoretical Physics, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics , Shanxi University , Taiyuan 030006 , People's Republic of China
| | - Bin Wang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, College of Electronic Science and Technology , Shenzhen University , Shenzhen 518060 , People's Republic of China
| |
Collapse
|
34
|
Koskinen P, Karppinen K, Myllyperkiö P, Hiltunen VM, Johansson A, Pettersson M. Optically Forged Diffraction-Unlimited Ripples in Graphene. J Phys Chem Lett 2018; 9:6179-6184. [PMID: 30380894 PMCID: PMC6221372 DOI: 10.1021/acs.jpclett.8b02461] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2018] [Accepted: 10/11/2018] [Indexed: 06/08/2023]
Abstract
In nanofabrication, just as in any other craft, the scale of spatial details is limited by the dimensions of the tool at hand. For example, the smallest details of direct laser writing with far-field light are set by the diffraction limit, which is approximately half of the used wavelength. In this work, we overcome this universal assertion by optically forging graphene ripples that show features with dimensions unlimited by diffraction. Thin sheet elasticity simulations suggest that the scaled-down ripples originate from the interplay between substrate adhesion, in-plane strain, and circular symmetry. The optical forging technique thus offers an accurate way to modify and shape 2D materials and facilitates the creation of controllable nanostructures for plasmonics, resonators, and nano-optics.
Collapse
Affiliation(s)
- Pekka Koskinen
- Nanoscience
Center, Department of Physics, University
of Jyväskylä, 40014 Jyväskylä, Finland
| | - Karoliina Karppinen
- Nanoscience
Center, Department of Chemistry, University
of Jyväskylä, 40014 Jyväskylä, Finland
| | - Pasi Myllyperkiö
- Nanoscience
Center, Department of Chemistry, University
of Jyväskylä, 40014 Jyväskylä, Finland
| | - Vesa-Matti Hiltunen
- Nanoscience
Center, Department of Physics, University
of Jyväskylä, 40014 Jyväskylä, Finland
| | - Andreas Johansson
- Nanoscience
Center, Department of Physics, University
of Jyväskylä, 40014 Jyväskylä, Finland
- Nanoscience
Center, Department of Chemistry, University
of Jyväskylä, 40014 Jyväskylä, Finland
| | - Mika Pettersson
- Nanoscience
Center, Department of Chemistry, University
of Jyväskylä, 40014 Jyväskylä, Finland
| |
Collapse
|
35
|
Zhan H, Zhang G, Yang C, Gu Y. Breakdown of Hooke's law at the nanoscale - 2D material-based nanosprings. NANOSCALE 2018; 10:18961-18968. [PMID: 30209479 DOI: 10.1039/c8nr04882g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A helical spring is one of the fundamental mechanical elements commonly used throughout human history, whose deformation characteristic is well described by Hooke's law. Based on in silico studies, this work reported a novel structural transition from a homogeneous morphology to an inhomogeneous configuration in the normal helical nanospring (NS) for the first time, which provides rigorous proof for the "breakdown of Hooke's law" at the nanoscale. Theoretical analyses and numerical results show that the transition is expected to occur in a wide range of two-dimensional (2D) material based normal helical NSs, and the driving mechanism is the interlayer van der Waals (vdW) interactions. A series spring model is established to describe this transition phenomenon by considering the elastic deformation energy and interlayer interactions, which explicitly illustrates the competition between the surface energy and the elastic constant in controlling such a structural transition. It is expected that the structural transition is strictly limited to the nanoscale system, where the interlayer interactions exert significant influence on its mechanical properties. This study provides a comprehensive understanding of the non-Hookean behavior of NSs, and sheds light on their applications in micro- and nanomachines or mechanical systems, such as nanoelectromechanical systems, nanorobots or soft machines.
Collapse
Affiliation(s)
- Haifei Zhan
- School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology (QUT), Brisbane, QLD 4001, Australia.
| | | | | | | |
Collapse
|
36
|
Islam MA, Kim JH, Ko TJ, Noh C, Nehate S, Kaium MG, Ko M, Fox D, Zhai L, Cho CH, Sundaram KB, Bae TS, Jung Y, Chung HS, Jung Y. Three dimensionally-ordered 2D MoS 2 vertical layers integrated on flexible substrates with stretch-tunable functionality and improved sensing capability. NANOSCALE 2018; 10:17525-17533. [PMID: 30211427 DOI: 10.1039/c8nr05362f] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The intrinsically anisotropic crystallinity of two-dimensional (2D) transition metal dichalcogenide (2D TMD) layers enables a variety of intriguing material properties which strongly depend on the physical orientation of constituent 2D layers. For instance, 2D TMDs with vertically-aligned layers exhibit numerous dangling bonds on their 2D layer edge sites predominantly exposed on the surface, projecting significantly improved physical and/or chemical adsorption capability compared to their horizontally-oriented 2D layer counterparts. Such property advantages can be further promoted as far as the material can be integrated onto unconventional substrates of tailored geometry/functionality, offering vast opportunities for a wide range of applications which demand enhanced surface area/reactivity and mechanical flexibility. Herein, we report a new form of 2D TMDs, i.e., three-dimensionally ordered 2D molybdenum disulfide (2D MoS2) with vertically-aligned layers integrated on elastomeric substrates and explore their tunable multi-functionalities and technological promise. We grew large-scale (>2 cm2) vertically-aligned 2D MoS2 layers using a three-dimensionally patterned silicon dioxide (SiO2) template and directly transferred/integrated them onto flexible polydimethylsiloxane (PDMS) substrates by taking advantage of the distinguishable water-wettability of 2D MoS2vs. SiO2. The excellent structural integrity of the integrated vertical 2D MoS2 layers was confirmed by extensive spectroscopy/microscopy characterization. In addition, the stretch-driven unique tunability of their optical and surface properties was also examined. Moreover, we applied this material for flexible humidity sensing and identified significantly improved (>10 times) sensitivity over conventionally-designed horizontal 2D MoS2 layers, further confirming their high potential for unconventional flexible technologies.
Collapse
Affiliation(s)
- Md Ashraful Islam
- NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
| | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|
37
|
Rooney AP, Li Z, Zhao W, Gholinia A, Kozikov A, Auton G, Ding F, Gorbachev RV, Young RJ, Haigh SJ. Anomalous twin boundaries in two dimensional materials. Nat Commun 2018; 9:3597. [PMID: 30185818 PMCID: PMC6125487 DOI: 10.1038/s41467-018-06074-8] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2018] [Accepted: 07/25/2018] [Indexed: 11/29/2022] Open
Abstract
Twin boundary defects form in virtually all crystalline materials as part of their response to applied deformation or thermal stress. For nearly six decades, graphite has been used as a textbook example of twinning with illustrations showing atomically sharp interfaces between parent and twin. Using state-of-the-art high-resolution annular dark-field scanning transmission electron microscopy, we have captured atomic resolution images of graphitic twin boundaries and find that these interfaces are far more complex than previously supposed. Density functional theory calculations confirm that the presence of van der Waals bonding eliminates the requirement for an atomically sharp interface, resulting in long-range bending across multiple unit cells. We show these remarkable structures are common to other van der Waals materials, leading to extraordinary microstructures, Raman-active stacking faults, and sub-surface exfoliation within bulk crystals. All materials subjected to mechanical deformation form low energy interfaces known as twin boundaries. Here, the authors investigate a variety of structural features that form upon bending atomically thin 2D-crystals, and predict distinct classes of post deformation microstructure based on their atomic arrangement, bend angle and flake thickness.
Collapse
Affiliation(s)
- A P Rooney
- School of Materials, University of Manchester, Manchester, M13 9PL, UK.,National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK
| | - Z Li
- School of Materials, University of Manchester, Manchester, M13 9PL, UK.,National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK
| | - W Zhao
- Institute of Textiles and Clothing, Polytechnic University, Hung Hom, Hong Kong.,Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS-CMCM)/School of Material Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea
| | - A Gholinia
- School of Materials, University of Manchester, Manchester, M13 9PL, UK
| | - A Kozikov
- Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester, M13 9PL, UK.,School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - G Auton
- National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK.,Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester, M13 9PL, UK
| | - F Ding
- Institute of Textiles and Clothing, Polytechnic University, Hung Hom, Hong Kong.,Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS-CMCM)/School of Material Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea
| | - R V Gorbachev
- National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK.,School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - R J Young
- School of Materials, University of Manchester, Manchester, M13 9PL, UK.,National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK.,Institute of Textiles and Clothing, Polytechnic University, Hung Hom, Hong Kong
| | - S J Haigh
- School of Materials, University of Manchester, Manchester, M13 9PL, UK. .,National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK.
| |
Collapse
|
38
|
Samadi M, Sarikhani N, Zirak M, Zhang H, Zhang HL, Moshfegh AZ. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. NANOSCALE HORIZONS 2018; 3:90-204. [PMID: 32254071 DOI: 10.1039/c7nh00137a] [Citation(s) in RCA: 116] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2, WS2 and WSe2, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.
Collapse
Affiliation(s)
- Morasae Samadi
- Department of Physics, Sharif University of Technology, Tehran 11155-9161, Iran.
| | | | | | | | | | | |
Collapse
|
39
|
Wu J, Cao P, Zhang Z, Ning F, Zheng SS, He J, Zhang Z. Grain-Size-Controlled Mechanical Properties of Polycrystalline Monolayer MoS 2. NANO LETTERS 2018; 18:1543-1552. [PMID: 29390189 DOI: 10.1021/acs.nanolett.7b05433] [Citation(s) in RCA: 31] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Pristine monocrystalline molybdenum disulfide (MoS2) possesses high mechanical strength comparable to that of stainless steel. Large-area chemical-vapor-deposited monolayer MoS2 tends to be polycrystalline with intrinsic grain boundaries (GBs). Topological defects and grain size skillfully alter its physical properties in a variety of materials; however, the polycrystallinity and its role played in the mechanical performance of the emerging single-layer MoS2 remain largely unknown. Here, using large-scale atomistic simulations, GB structures and mechanical characteristics of realistic single-layered polycrystalline MoS2 of varying grain size prepared by confinement-quenched method are investigated. Depending on misorientation angle, structural energetics of polar-GBs in polycrystals favor diverse dislocation cores, consistent with experimental observations. Polycrystals exhibit grain-size-dependent thermally induced global out-of-plane deformation, although defective GBs in MoS2 show planar structures that are in contrast to the graphene. Tensile tests show that presence of cohesive GBs pronouncedly deteriorates the in-plane mechanical properties of MoS2. Both stiffness and strength follow an inverse pseudo Hall-Petch relation to grain size, which is shown to be governed by the weakest link mechanism. Under uniaxial tension, transgranular crack propagates with small deflection, whereas upon biaxial stretching, the crack grows in a kinked manner with large deflection. These findings shed new light in GB-based engineering and control of mechanical properties of MoS2 crystals toward real-world applications in flexible electronics and nanoelectromechanical systems.
Collapse
Affiliation(s)
- Jianyang Wu
- NTNU Nanomechanical Lab, Department of Structural Engineering, Norwegian University of Science and Technology (NTNU) , Trondheim 7491, Norway
| | - Pinqiang Cao
- Faculty of Engineering, China University of Geosciences , Wuhan, Hubei 430074, PR China
| | | | - Fulong Ning
- Faculty of Engineering, China University of Geosciences , Wuhan, Hubei 430074, PR China
| | | | - Jianying He
- NTNU Nanomechanical Lab, Department of Structural Engineering, Norwegian University of Science and Technology (NTNU) , Trondheim 7491, Norway
| | - Zhiliang Zhang
- NTNU Nanomechanical Lab, Department of Structural Engineering, Norwegian University of Science and Technology (NTNU) , Trondheim 7491, Norway
| |
Collapse
|
40
|
Zhang Q, Wang W, Zhang J, Zhu X, Fu L. Thermally Induced Bending of ReS 2 Nanowalls. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1704585. [PMID: 29205542 DOI: 10.1002/adma.201704585] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2017] [Revised: 09/29/2017] [Indexed: 06/07/2023]
Abstract
Among the variety of stimuli-responsive materials, temperature-responsive materials (TRMs) can adapt to the surrounding environment in the presence of a thermal stimulus, and they have attracted considerable attention in sensors, actuators, and surface engineering. However, polymers, as the most representative TRMs, are far from ideal with respect to long-term reliability and durability. Here, for the first time, an inorganic material, ReS2 , is analyzed, which possesses an unexpected temperature-responsive behavior that is triggered by stable and reversible thermally induced bending (TIB). Due to thermal fluctuations in the ReS2 layers, intrinsic ripples tend to aggravate rapidly with rising temperature. Then, the weak interlayer interaction of ReS2 is further weakened, thus resulting in interlayer sliding. Due to a decrease in bending rigidity with increasing temperature, out-of-plane bending spontaneously occurs in the ReS2 layers. Interestingly, this TIB of ReS2 can recover to its initial configuration when the temperature drops, which is further confirmed by the reversible wetting measurement. Above all, the TIB behavior of ReS2 exhibits great potential in smart applications, such as smart windows and microfluidic devices, and fills the significant gaps of inorganic TRMs.
Collapse
Affiliation(s)
- Qin Zhang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Wenjie Wang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Jiaqian Zhang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Xiaohui Zhu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
- Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| |
Collapse
|
41
|
Gong C, Zhang Y, Chen W, Chu J, Lei T, Pu J, Dai L, Wu C, Cheng Y, Zhai T, Li L, Xiong J. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2017; 4:1700231. [PMID: 29270337 PMCID: PMC5737141 DOI: 10.1002/advs.201700231] [Citation(s) in RCA: 74] [Impact Index Per Article: 10.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2017] [Revised: 07/28/2017] [Indexed: 05/20/2023]
Abstract
With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high-performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low-symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field-effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high-performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.
Collapse
Affiliation(s)
- Chuanhui Gong
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Yuxi Zhang
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Wei Chen
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Junwei Chu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Tianyu Lei
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Junru Pu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Liping Dai
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Chunyang Wu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Yuhua Cheng
- School of Automation EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Liang Li
- College of Physics, Optoelectronics and EnergyCenter for Energy Conversion Materials & Physics (CECMP)Soochow UniversitySuzhou215006P. R. China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| |
Collapse
|
42
|
Luo C, Wang C, Wu X, Zhang J, Chu J. In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1604259. [PMID: 28783241 DOI: 10.1002/smll.201604259] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2016] [Revised: 06/22/2017] [Indexed: 06/07/2023]
Abstract
Two-dimensional (2D) ultra-thin materials beyond graphene with rich physical properties and unique layered structures are promising for applications in electronics, chemistry, energy, and bioscience, etc. The interaction mechanisms among the structures, chemical compositions and physical properties of 2D layered materials are critical for fundamental nanosciences and the practical fabrication of next-generation nanodevices. Transmission electron microscopy (TEM), with its high spatial resolution and versatile external fields, is undoubtedly a powerful tool for the static characterization and dynamic manipulation of nanomaterials and nanodevices at the atomic scale. The rapid development of thin-film and precision microelectromechanical systems (MEMS) techniques allows 2D layered materials and nanodevices to be probed and engineered inside TEM under external stimuli such as thermal, electrical, mechanical, liquid/gas environmental, optical, and magnetic fields at the nanoscale. Such advanced technologies leverage the traditional static TEM characterization into an in situ and interactive manipulation of 2D layered materials without sacrificing the resolution or the high vacuum chamber environment, facilitating exploration of the intrinsic structure-property relationship of 2D layered materials. In this Review, the dynamic properties tailored and observed by the most advanced and unprecedented in situ TEM technology are introduced. The challenges in spatial, time and energy resolution are discussed also.
Collapse
Affiliation(s)
- Chen Luo
- Shanghai Key Laboratory of Multidimensional Information Processing, State Key Laboratory of Transducer Technology, Department of Electrical Engineering, East China Normal University, 500 Dongchuan Road, Shanghai, 200241, China
| | - Chaolun Wang
- Shanghai Key Laboratory of Multidimensional Information Processing, State Key Laboratory of Transducer Technology, Department of Electrical Engineering, East China Normal University, 500 Dongchuan Road, Shanghai, 200241, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, State Key Laboratory of Transducer Technology, Department of Electrical Engineering, East China Normal University, 500 Dongchuan Road, Shanghai, 200241, China
| | - Jian Zhang
- Shanghai Key Laboratory of Multidimensional Information Processing, State Key Laboratory of Transducer Technology, Department of Electrical Engineering, East China Normal University, 500 Dongchuan Road, Shanghai, 200241, China
| | - Junhao Chu
- Shanghai Key Laboratory of Multidimensional Information Processing, State Key Laboratory of Transducer Technology, Department of Electrical Engineering, East China Normal University, 500 Dongchuan Road, Shanghai, 200241, China
| |
Collapse
|
43
|
Lin S, Shih CJ, Sresht V, Govind Rajan A, Strano MS, Blankschtein D. Understanding the colloidal dispersion stability of 1D and 2D materials: Perspectives from molecular simulations and theoretical modeling. Adv Colloid Interface Sci 2017; 244:36-53. [PMID: 27521100 DOI: 10.1016/j.cis.2016.07.007] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2015] [Revised: 07/27/2016] [Accepted: 07/27/2016] [Indexed: 01/14/2023]
Abstract
The colloidal dispersion stability of 1D and 2D materials in the liquid phase is critical for scalable nano-manufacturing, chemical modification, composites production, and deployment as conductive inks or nanofluids. Here, we review recent computational and theoretical studies carried out by our group to model the dispersion stability of 1D and 2D materials, including single-walled carbon nanotubes, graphene, and graphene oxide in aqueous surfactant solutions or organic solvents. All-atomistic (AA) molecular dynamics (MD) simulations can probe the molecular level details of the adsorption morphology of surfactants and solvents around these materials, as well as quantify the interaction energy between the nanomaterials mediated by surfactants or solvents. Utilizing concepts from reaction kinetics and diffusion, one can directly predict the rate constants for the aggregation kinetics and dispersion life times using MD outputs. Furthermore, the use of coarse-grained (CG) MD simulations allows quantitative prediction of surfactant adsorption isotherms. Combined with the Poisson-Boltzmann equation, the Langmuir isotherm, and the DLVO theory, one can directly use CGMD outputs to: (i) predict electrostatic potentials around the nanomaterial, (ii) correlate surfactant surface coverages with surfactant concentrations in the bulk dispersion medium, and (iii) determine energy barriers against coagulation. Finally, we discuss challenges associated with studying emerging 2D materials, such as, hexagonal boron nitride (h-BN), phosphorene, and transition metal dichalcogenides (TMDCs), including molybdenum disulfide (MoS2). An outlook is provided to address these challenges with plans to develop force-field parameters for MD simulations to enable predictive modeling of emerging 2D materials in the liquid phase.
Collapse
Affiliation(s)
- Shangchao Lin
- Department of Mechanical Engineering, Materials Science & Engineering Program, Florida State University, Tallahassee, FL 32310, United States
| | - Chih-Jen Shih
- Institute for Chemical and Bioengineering, ETH Zürich, Vladimir-Perlog-Weg 1, ETH Hönggerberg, HCI E137, CH-8093 Zürich, Switzerland
| | - Vishnu Sresht
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
| | - Ananth Govind Rajan
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
| | - Michael S Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
| | - Daniel Blankschtein
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States.
| |
Collapse
|
44
|
Wang F, Xu H, Fang J, Wang G, Zhang X. Probing the interfacial interaction between monolayer molybdenum disulfide and Au nanoclusters. SURF INTERFACE ANAL 2017. [DOI: 10.1002/sia.6233] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Fei Wang
- School of Physics and Electronics; Central South University; Changsha Hunan Province 410083 China
- College of Science; National University of Defense Technology; Changsha Hunan Province 410073 China
| | - Hui Xu
- School of Physics and Electronics; Central South University; Changsha Hunan Province 410083 China
| | - Jingyue Fang
- College of Science; National University of Defense Technology; Changsha Hunan Province 410073 China
| | - Guang Wang
- College of Science; National University of Defense Technology; Changsha Hunan Province 410073 China
| | - Xueao Zhang
- College of Science; National University of Defense Technology; Changsha Hunan Province 410073 China
| |
Collapse
|
45
|
Salazar N, Beinik I, Lauritsen JV. Single-layer MoS2formation by sulfidation of molybdenum oxides in different oxidation states on Au(111). Phys Chem Chem Phys 2017; 19:14020-14029. [DOI: 10.1039/c7cp00958e] [Citation(s) in RCA: 30] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Abstract
The sulfidation pathway from MoO3to MoS2on Au(111) revealed by a combination of Scanning Tunneling Microscopy and X-Ray Photoelectron Spectroscopy.
Collapse
Affiliation(s)
- Norberto Salazar
- Interdisciplinary Nanoscience Center
- Aarhus University
- 8000 Aarhus C
- Denmark
| | - Igor Beinik
- Interdisciplinary Nanoscience Center
- Aarhus University
- 8000 Aarhus C
- Denmark
| | - Jeppe V. Lauritsen
- Interdisciplinary Nanoscience Center
- Aarhus University
- 8000 Aarhus C
- Denmark
| |
Collapse
|
46
|
Liu X, Liu J, Antipina LY, Hu J, Yue C, Sanchez AM, Sorokin PB, Mao Z, Wei J. Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals. NANO LETTERS 2016; 16:6188-6195. [PMID: 27579584 DOI: 10.1021/acs.nanolett.6b02453] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Micromechanical exfoliation of two-dimensional (2D) van der Waals materials has triggered an explosive interest in 2D material research. The extension of this idea to 1D van der Waals materials, possibly opening a new arena for 1D material research, has not yet been realized. In this paper, we demonstrate that 1D nanowire with sizes as small as six molecular ribbons, can be readily achieved in the Ta2(Pd or Pt)3Se8 system by simple micromechanical exfoliation. Exfoliated Ta2Pd3Se8 nanowires are n-type semiconductors, whereas isostructural Ta2Pt3Se8 nanowires are p-type semiconductors. Both types of nanowires show excellent electrical switching performance as the channel material for a field-effect transistor. Low-temperature transport measurement reveals a defect level inherent to Ta2Pd3Se8 nanowires, which enables the observed electrical switching behavior at high temperature (above 140 K). A functional logic gate consisting of both n-type Ta2Pd3Se8 and p-type Ta2Pt3Se8 field-effect transistors has also been successfully achieved. By taking advantage of the high crystal quality derived from the parent van der Waals bulk compound, our findings about the exfoliated Ta2(Pd or Pt)3Se8 nanowires demonstrate a new pathway to access single-crystal 1D nanostructures for the study of their fundamental properties and the exploration of their applications in electronics, optoelectronics, and energy harvesting.
Collapse
Affiliation(s)
- Xue Liu
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| | - Jinyu Liu
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| | - Liubov Yu Antipina
- Technological Institute for Superhard and Novel Carbon Materials , Moscow, 142190, Russian Federation
- Moscow Institute of Physics and Technology , Dolgoprudny, 141700, Russian Federation
- National University of Science and Technology "MISiS" , Moscow, 119049, Russian Federation
| | - Jin Hu
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| | - Chunlei Yue
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| | - Ana M Sanchez
- Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom
| | - Pavel B Sorokin
- Technological Institute for Superhard and Novel Carbon Materials , Moscow, 142190, Russian Federation
- National University of Science and Technology "MISiS" , Moscow, 119049, Russian Federation
| | - Zhiqiang Mao
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| | - Jiang Wei
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| |
Collapse
|
47
|
Asres GA, Dombovari A, Sipola T, Puskás R, Kukovecz A, Kónya Z, Popov A, Lin JF, Lorite GS, Mohl M, Toth G, Lloyd Spetz A, Kordas K. A novel WS2 nanowire-nanoflake hybrid material synthesized from WO3 nanowires in sulfur vapor. Sci Rep 2016; 6:25610. [PMID: 27180902 PMCID: PMC4867582 DOI: 10.1038/srep25610] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/21/2015] [Accepted: 04/06/2016] [Indexed: 12/01/2022] Open
Abstract
In this work, WS2 nanowire-nanoflake hybrids are synthesized by the sulfurization of hydrothermally grown WO3 nanowires. The influence of temperature on the formation of products is optimized to grow WS2 nanowires covered with nanoflakes. Current-voltage and resistance-temperature measurements carried out on random networks of the nanostructures show nonlinear characteristics and negative temperature coefficient of resistance indicating that the hybrids are of semiconducting nature. Bottom gated field effect transistor structures based on random networks of the hybrids show only minor modulation of the channel conductance upon applied gate voltage, which indicates poor electrical transport between the nanowires in the random films. On the other hand, the photo response of channel current holds promise for cost-efficient solution process fabrication of photodetector devices working in the visible spectral range.
Collapse
Affiliation(s)
- Georgies Alene Asres
- Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
| | - Aron Dombovari
- Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
| | - Teemu Sipola
- Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
| | - Robert Puskás
- Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Bela ter 1, H-6720 Szeged, Hungary
| | - Akos Kukovecz
- Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Bela ter 1, H-6720 Szeged, Hungary.,MTA-SZTE "Lendület" Porous Nanocomposites Research Group, Rerrich Bela ter 1, H-6720 Szeged, Hungary
| | - Zoltán Kónya
- Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Bela ter 1, H-6720 Szeged, Hungary.,MTA-SZTE Reaction Kinetics and Surface Chemistry Research Group, Rerrich Bela ter 1 H-6720 Szeged, Hungary
| | - Alexey Popov
- Optoelectronics and Measurement Techniques Laboratory, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
| | - Jhih-Fong Lin
- Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
| | - Gabriela S Lorite
- Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
| | - Melinda Mohl
- Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
| | - Geza Toth
- Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
| | - Anita Lloyd Spetz
- Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland.,Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
| | - Krisztian Kordas
- Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
| |
Collapse
|
48
|
Deokar G, Vignaud D, Arenal R, Louette P, Colomer JF. Synthesis and characterization of MoS2 nanosheets. NANOTECHNOLOGY 2016; 27:075604. [PMID: 26789493 DOI: 10.1088/0957-4484/27/7/075604] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Here, we report on the synthesis of MoS2 nanosheets using a simple two-step additive-free growth technique. The as-synthesized nanosheets were characterized to determine their structure and composition, as well as their optical properties. The MoS2 nanosheets were analyzed by scanning electron microscopy, transmission electron microscopy (TEM), including high-resolution scanning TEM imaging and energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy (XPS), Raman spectroscopy and photoluminescence (PL). The as-produced MoS2 nanosheets are vertically aligned with curved edges and are densely populated. The TEM measurements confirmed that the nanosheets have the 2H-MoS2 crystal structure in agreement with the Raman results. The XPS results revealed the presence of high purity MoS2. Moreover, a prominent PL similar to mechanically exfoliated few and mono-layer MoS2 was observed for the as-grown nanosheets. For the thin (≤50 nm) nanosheets, the PL feature was observed at the same energy as that for a direct band-gap monolayer MoS2 (1.83 eV). Thus, the as-produced high-quality, large-area, MoS2 nanosheets could be potentially useful for various optoelectronic and catalysis applications.
Collapse
Affiliation(s)
- G Deokar
- Research Group on Carbon Nanostructures (CARBONNAGe), University of Namur, 61 Rue de Bruxelles, 5000 Namur, Belgium
| | | | | | | | | |
Collapse
|
49
|
Yue C, Hu J, Liu X, Sanchez AM, Mao Z, Wei J. Nanoscale Inhomogeneous Superconductivity in Fe(Te1-xSex) Probed by Nanostructure Transport. ACS NANO 2016; 10:429-435. [PMID: 26691639 DOI: 10.1021/acsnano.5b05236] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Among iron-based superconductors, the layered iron chalcogenide Fe(Te1-xSex) is structurally the simplest and has attracted considerable attention. It has been speculated from bulk studies that nanoscale inhomogeneous superconductivity may inherently exist in this system. However, this has not been directly observed from nanoscale transport measurements. In this work, through simple micromechanical exfoliation and high-precision low-energy ion milling thinning, we prepared Fe(Te0.5Se0.5) nanoflakes with various thicknesses and systematically studied the correlation between the thickness and superconducting phase transition. Our result revealed a systematic thickness-dependent evolution of superconducting transition. When the thickness of the Fe(Te0.5Se0.5) flake is reduced to less than the characteristic inhomogeneity length (around 12 nm), both the superconducting current path and the metallicity of the normal state in Fe(Te0.5Se0.5) atomic sheets are suppressed. This observation provides the first transport evidence for the nanoscale inhomogeneous nature of superconductivity in Fe(Te1-xSex).
Collapse
Affiliation(s)
- Chunlei Yue
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| | - Jin Hu
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| | - Xue Liu
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| | - Ana M Sanchez
- Department of Physics, University of Warwick , Coventry, CV4 7AL, U.K
| | - Zhiqiang Mao
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| | - Jiang Wei
- Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States
| |
Collapse
|
50
|
Hu T, Hu M, Li Z, Zhang H, Zhang C, Wang J, Wang X. Interlayer coupling in two-dimensional titanium carbide MXenes. Phys Chem Chem Phys 2016; 18:20256-60. [DOI: 10.1039/c6cp01699e] [Citation(s) in RCA: 81] [Impact Index Per Article: 10.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The interlayer coupling in Tin+1CnT2(n= 1 and 2, T = OH, O and F) is significantly stronger than van der Waals bonding, as evidenced by the fact that binding energies are 2–6 times those of graphite and MoS2from first-principles calculations.
Collapse
Affiliation(s)
- Tao Hu
- Shenyang National Laboratory for Materials Science
- Institute of Metal Research
- Chinese Academy of Sciences
- Shenyang 110016
- China
| | - Minmin Hu
- Shenyang National Laboratory for Materials Science
- Institute of Metal Research
- Chinese Academy of Sciences
- Shenyang 110016
- China
| | - Zhaojin Li
- Shenyang National Laboratory for Materials Science
- Institute of Metal Research
- Chinese Academy of Sciences
- Shenyang 110016
- China
| | - Hui Zhang
- Shenyang National Laboratory for Materials Science
- Institute of Metal Research
- Chinese Academy of Sciences
- Shenyang 110016
- China
| | - Chao Zhang
- Shenyang National Laboratory for Materials Science
- Institute of Metal Research
- Chinese Academy of Sciences
- Shenyang 110016
- China
| | - Jingyang Wang
- Shenyang National Laboratory for Materials Science
- Institute of Metal Research
- Chinese Academy of Sciences
- Shenyang 110016
- China
| | - Xiaohui Wang
- Shenyang National Laboratory for Materials Science
- Institute of Metal Research
- Chinese Academy of Sciences
- Shenyang 110016
- China
| |
Collapse
|