1
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Liu S, Zhang L, Ma B, Zeng X, Liu Y, Ma Z, Yang Z, Wang X. High-Performance Ultraviolet to Near-Infrared Antiambipolar Photodetectors Based on 1D CdS xSe 1-x/2D Te Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39222360 DOI: 10.1021/acsami.4c05528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
Antiambipolar heterojunctions are regarded as a revolutionary technology in the fields of electronics and optoelectronics, enabling the switch between positive and negative transconductance within a single device, which is crucial for diverse logic circuit applications. This study pioneers a mixed-dimensional photodetector featuring antiambipolar properties, facilitated by the van der Waals integration of one-dimensional CdSxSe1-x nanowires and two-dimensional Te nanosheets. This antiambipolar device enables flexible control over carrier transport via gate voltage, thus paving new paths for future optoelectronic devices. Furthermore, by precisely managing the stoichiometry of the ternary alloy CdSxSe1-x nanowires, fine-tuning of the nanowire band structure is achieved. This allows for customizable heterojunction band alignment (Type I and Type II), enabling adjustable band alignment. Through sophisticated band engineering, optimal Type II band alignment is achieved at the CdSxSe1-x/Te interface, significantly enhancing the device's photoelectric conversion efficiency through the synergistic effect of different dimensional materials. Exhibiting outstanding photoresponse across a broad spectral range from ultraviolet to near-infrared, especially under 450 nm illumination, the CdSxSe1-x/Te heterojunction photodetector demonstrates superior performance, including an impressive responsivity of 284 A W-1, a high detectivity of 1.07 × 1017 Jones, an elevated external quantum efficiency of 7.83 × 104 %, and a swift response time of 11 μs. Ultimately, this customizable antiambipolar photodetector lays a solid foundation for the advancement of next-generation optoelectronic technologies.
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Affiliation(s)
- Shuo Liu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Liang Zhang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Research Center for Novel Computational Sensing and Intelligent Processing, Zhejiang Laboratory, Hangzhou, Zhejiang 311100, China
| | - Boyang Ma
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xiangyu Zeng
- Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China
| | - Yang Liu
- Department of Physics, Loughborough University, Loughborough LE11 3TU, U.K
| | - Zhi Ma
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zongyin Yang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xiaozhi Wang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
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2
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Zojer E. Electrostatically Designing Materials and Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406178. [PMID: 39194368 DOI: 10.1002/adma.202406178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Revised: 07/08/2024] [Indexed: 08/29/2024]
Abstract
Collective electrostatic effects arise from the superposition of electrostatic potentials of periodically arranged (di)polar entities and are known to crucially impact the electronic structures of hybrid interfaces. Here, it is discussed, how they can be used outside the beaten paths of materials design for realizing systems with advanced and sometimes unprecedented properties. The versatility of the approach is demonstrated by applying electrostatic design not only to metal-organic interfaces and adsorbed (complex) monolayers, but also to inter-layer interfaces in van der Waals heterostructures, to polar metal-organic frameworks (MOFs), and to the cylindrical pores of covalent organic frameworks (COFs). The presented design ideas are straightforward to simulate and especially for metal-organic interfaces also their experimental implementation has been amply demonstrated. For van der Waals heterostructures, the needed building blocks are available, while the required assembly approaches are just being developed. Conversely, for MOFs the necessary growth techniques exist, but more work on advanced linker molecules is required. Finally, COF structures exist that contain pores decorated with polar groups, but the electrostatic impact of these groups has been largely ignored so far. All this suggest that the dawn of the age of electrostatic design is currently experienced with potential breakthroughs lying ahead.
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Affiliation(s)
- Egbert Zojer
- Institute of Solid State Physics, NAWI Graz, Petersgasse 16, Graz, A-8010, Austria
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3
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Chen D, Jiang J, Weatherley TFK, Carlin JF, Banerjee M, Grandjean N. GaN Surface Passivation by MoS 2 Coating. NANO LETTERS 2024; 24:10124-10130. [PMID: 39132976 PMCID: PMC11342355 DOI: 10.1021/acs.nanolett.4c02259] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2024] [Revised: 08/06/2024] [Accepted: 08/07/2024] [Indexed: 08/13/2024]
Abstract
In this study, we investigate the impact of two-dimensional MoS2 coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS2 coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS2, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QWs and suppresses spatially localized intrinsic surface states. This finding provides novel pathways for efficient III-nitride surface passivation.
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Affiliation(s)
- Danxuan Chen
- Laboratory
of Advanced Semiconductors for Photonics and Electronics, Institute
of Physics, École Polytechnique Fédérale
de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Jin Jiang
- Laboratory
of Quantum Physics, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Thomas F. K. Weatherley
- Laboratory
of Advanced Semiconductors for Photonics and Electronics, Institute
of Physics, École Polytechnique Fédérale
de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Jean-François Carlin
- Laboratory
of Advanced Semiconductors for Photonics and Electronics, Institute
of Physics, École Polytechnique Fédérale
de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Mitali Banerjee
- Laboratory
of Quantum Physics, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Nicolas Grandjean
- Laboratory
of Advanced Semiconductors for Photonics and Electronics, Institute
of Physics, École Polytechnique Fédérale
de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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4
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Fuller N, Rudayni F, Amos S, Rijal K, Maroufian SA, Valencia-Acuna P, Karl T, Zhao H, Peelaers H, Zhou Q, Chan WL. Modulation of Electrostatic Potential in 2D Crystal Engineered by an Array of Alternating Polar Molecules. NANO LETTERS 2024; 24:10258-10264. [PMID: 39134480 DOI: 10.1021/acs.nanolett.4c02555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/22/2024]
Abstract
The moiré potential in rotationally misfit two-dimensional (2D) heterostructures has been used to build artificial exciton and electron lattices, which have become platforms for realizing exotic electronic phases. Here, we demonstrate a different approach to create a superlattice potential in 2D crystals by using the near field of an array of polar molecules. A bilayer of titanyl phthalocyanine (TiOPc), consisting of alternating out-of-plane dipoles, is deposited on monolayer MoS2. Time-resolved two-photon photoemission spectroscopy reveals a pair of interlayer exciton states with an energy difference of ∼0.1 eV, which is consistent with the electrostatic potential modulation induced by the TiOPc bilayer as determined by density functional theory calculations. Because the symmetry and the period of this potential superlattice can be changed readily by using molecules of different shapes and sizes, molecule/2D heterostructures can be promising platforms for designing artificial exciton and electron lattices.
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Affiliation(s)
- Neno Fuller
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
| | - Fatimah Rudayni
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
- Department of Physics, Jazan University, Jazan 45142, Saudi Arabia
| | - Stephanie Amos
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
| | - Kushal Rijal
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
| | - Seyed A Maroufian
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
| | - Pavel Valencia-Acuna
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
| | - Tyson Karl
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
| | - Hui Zhao
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
| | - Hartwin Peelaers
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
| | - Qunfei Zhou
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
| | - Wai-Lun Chan
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
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5
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Qiu D, Wang H, Ma T, Huang J, Meng Z, Fan D, Bowen CR, Lu H, Liu Y, Chandrasekaran S. Promoting Electrocatalytic Oxygen Reactions Using Advanced Heterostructures for Rechargeable Zinc-Air Battery Applications. ACS NANO 2024; 18:21651-21684. [PMID: 39129497 PMCID: PMC11342935 DOI: 10.1021/acsnano.4c02289] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 07/28/2024] [Accepted: 07/31/2024] [Indexed: 08/13/2024]
Abstract
In order to facilitate electrochemical oxygen reactions in electrically rechargeable zinc-air batteries (ZABs), there is a need to develop innovative approaches for efficient oxygen electrocatalysts. Due to their reliability, high energy density, material abundance, and ecofriendliness, rechargeable ZABs hold promise as next-generation energy storage and conversion devices. However, the large-scale application of ZABs is currently hindered by the slow kinetics of the oxygen reduction reaction (ORR) and the oxygen evolution reaction (OER). However, the development of heterostructure-based electrocatalysts has the potential to surpass the limitations imposed by the intrinsic properties of a single material. This Account begins with an explanation of the configurations of ZABs and the fundamentals of the oxygen electrochemistry of the air electrode. Then, we summarize recent progress with respect to the variety of heterostructures that exploit bifunctional electrocatalytic reactions and overview their impact on ZAB performance. The range of heterointerfacial engineering strategies for improving the ORR/OER and ZAB performance includes tailoring the surface chemistry, dimensionality of catalysts, interfacial charge transfer, mass and charge transport, and morphology. We highlight the multicomponent design approaches that take these features into account to create advanced highly active bifunctional catalysts. Finally, we discuss the challenges and future perspectives on this important topic that aim to enhance the bifunctional activity and performance of zinc-air batteries.
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Affiliation(s)
- Dingrong Qiu
- Guangxi
Key Laboratory of Electrochemical and Magneto-chemical, Functional
Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
- Guangxi
Colleges and Universities Key Laboratory of Surface and Interface
Electrochemistry, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
| | - Huihui Wang
- Guangxi
Key Laboratory of Electrochemical and Magneto-chemical, Functional
Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
- Guangxi
Colleges and Universities Key Laboratory of Surface and Interface
Electrochemistry, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
| | - Tingting Ma
- Guangxi
Key Laboratory of Electrochemical and Magneto-chemical, Functional
Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
- Guangxi
Colleges and Universities Key Laboratory of Surface and Interface
Electrochemistry, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
| | - Jiangdu Huang
- Guangxi
Key Laboratory of Electrochemical and Magneto-chemical, Functional
Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
- Guangxi
Colleges and Universities Key Laboratory of Surface and Interface
Electrochemistry, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
| | - Zhen Meng
- Guangxi
Key Laboratory of Electrochemical and Magneto-chemical, Functional
Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
- Guangxi
Colleges and Universities Key Laboratory of Surface and Interface
Electrochemistry, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
| | - Dayong Fan
- Guangxi
Key Laboratory of Electrochemical and Magneto-chemical, Functional
Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
- Guangxi
Colleges and Universities Key Laboratory of Surface and Interface
Electrochemistry, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
| | - Chris R. Bowen
- Department
of Mechanical Engineering, University of
Bath, BA2 7AY Bath, U.K.
| | - Huidan Lu
- Guangxi
Key Laboratory of Electrochemical and Magneto-chemical, Functional
Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
- Guangxi
Colleges and Universities Key Laboratory of Surface and Interface
Electrochemistry, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
| | - Yongping Liu
- Guangxi
Key Laboratory of Electrochemical and Magneto-chemical, Functional
Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
- Guangxi
Colleges and Universities Key Laboratory of Surface and Interface
Electrochemistry, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
| | - Sundaram Chandrasekaran
- Guangxi
Key Laboratory of Electrochemical and Magneto-chemical, Functional
Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
- Guangxi
Colleges and Universities Key Laboratory of Surface and Interface
Electrochemistry, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541004, P.R. China
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6
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Bhowmik S, Ghosh A, Chandni U. Emergent phases in graphene flat bands. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2024; 87:096401. [PMID: 39059412 DOI: 10.1088/1361-6633/ad67ed] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Accepted: 07/26/2024] [Indexed: 07/28/2024]
Abstract
Electronic correlations in two-dimensional materials play a crucial role in stabilising emergent phases of matter. The realisation of correlation-driven phenomena in graphene has remained a longstanding goal, primarily due to the absence of strong electron-electron interactions within its low-energy bands. In this context, magic-angle twisted bilayer graphene has recently emerged as a novel platform featuring correlated phases favoured by the low-energy flat bands of the underlying moiré superlattice. Notably, the observation of correlated insulators and superconductivity, and the interplay between these phases have garnered significant attention. A wealth of correlated phases with unprecedented tunability was discovered subsequently, including orbital ferromagnetism, Chern insulators, strange metallicity, density waves, and nematicity. However, a comprehensive understanding of these closely competing phases remains elusive. The ability to controllably twist and stack multiple graphene layers has enabled the creation of a whole new family of moiré superlattices with myriad properties. Here, we review the progress and development achieved so far, encompassing the rich phase diagrams offered by these graphene-based moiré systems. Additionally, we discuss multiple phases recently observed in non-moiré multilayer graphene systems. Finally, we outline future opportunities and challenges for the exploration of hidden phases in this new generation of moiré materials.
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Affiliation(s)
- Saisab Bhowmik
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India
| | - U Chandni
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
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7
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Shu F, Chen W, Chen Y, Liu G. 2D Atomic-Molecular Heterojunctions toward Brainoid Applications. Macromol Rapid Commun 2024:e2400529. [PMID: 39101667 DOI: 10.1002/marc.202400529] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2024] [Revised: 07/23/2024] [Indexed: 08/06/2024]
Abstract
Brainoid computing using 2D atomic crystals and their heterostructures, by emulating the human brain's remarkable efficiency and minimal energy consumption in information processing, poses a formidable solution to the energy-efficiency and processing speed constraints inherent in the von Neumann architecture. However, conventional 2D material based heterostructures employed in brainoid devices are beset with limitations, performance uniformity, fabrication intricacies, and weak interfacial adhesion, which restrain their broader application. The introduction of novel 2D atomic-molecular heterojunctions (2DAMH), achieved through covalent functionalization of 2D materials with functional molecules, ushers in a new era for brain-like devices by providing both stability and tunability of functionalities. This review chiefly delves into the electronic attributes of 2DAMH derived from the synergy of polymer materials with 2D materials, emphasizing the most recent advancements in their utilization within memristive devices, particularly their potential in replicating the functionality of biological synapses. Despite ongoing challenges pertaining to precision in modification, scalability in production, and the refinement of underlying theories, the proliferation of innovative research is actively pursuing solutions. These endeavors illuminate the vast potential for incorporating 2DAMH within brain-inspired intelligent systems, highlighting the prospect of achieving a more efficient and energy-conserving computing paradigm.
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Affiliation(s)
- Fan Shu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Weilin Chen
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yu Chen
- School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Gang Liu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
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8
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Tan SF, Roslie H, Salim T, Han Z, Wu D, Liang C, Teo LF, Lam YM. Operando Electrodeposition of Nonprecious Metal Copper Nanocatalysts on Low-Dimensional Support Materials for Nitrate Reduction Reactions. ACS NANO 2024; 18:19220-19231. [PMID: 38976597 DOI: 10.1021/acsnano.4c04947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/10/2024]
Abstract
Supported nonprecious metal catalysts such as copper (Cu) are promising replacements for Pt-based catalysts for a wide range of energy-related electrochemical reactions. Direct electrochemical deposition is one of the most straightforward and versatile methods to synthesize supported nonprecious metal catalysts. However, further advancement in the design of supported nonprecious metal catalysts requires a detailed mechanistic understanding of the interplay between kinetics and thermodynamics of the deposition phenomena under realistic reaction conditions. Here, we study the electrodeposition of Cu on carbon nanotubes and graphene derivatives under electrochemical conditions using in situ liquid cell transmission electron microscopy (TEM). By combining real-time imaging, electrochemical measurements, X-ray photoelectron spectroscopy (XPS), and finite-element analysis (FEA), we show that low-dimensional support materials, especially carbon nanotubes, are excellent for generating uniform and finely dispersed platinum group metal-(PGM)-free catalysts under mild electrochemical conditions. The electrodeposited Cu on graphene and carbon nanotubes is also observed to show good electrochemical activity toward nitrate reduction reactions (NO3RRs), further supported by density functional theory (DFT) calculations. Nitrogen doping plays an important role in guiding nonprecious metal deposition, but its low electrical conductivity may give rise to lower NO3RR activity compared to its nondoped analogue. The development of supported nonprecious metals through interfacial and surface engineering for the design of supported catalysts will substantially reduce the demand for precious metals and generate robust catalysts with better durability, thereby presenting opportunities for solving the critical problems in energy storage and electrocatalysis.
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Affiliation(s)
- Shu Fen Tan
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
- Facility for Analysis, Characterisation, Testing and Simulation (FACTS), Nanyang Technological University, 639798 Singapore
| | - Hany Roslie
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Teddy Salim
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
- Facility for Analysis, Characterisation, Testing and Simulation (FACTS), Nanyang Technological University, 639798 Singapore
| | - Zengyu Han
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Dongshuang Wu
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Caihong Liang
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Lim Fong Teo
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Yeng Ming Lam
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
- Facility for Analysis, Characterisation, Testing and Simulation (FACTS), Nanyang Technological University, 639798 Singapore
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9
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Li D, Li Z, Pan C, Sun Y, Zhou J, Yangdong X, Xu X, Liu L, Wang H, Chen Y, Song X, Liu P, Zhou X, Liang SJ, Miao F, Zhai T. Ionic Photovoltaics-in-Memory in van der Waals Material. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406984. [PMID: 39039978 DOI: 10.1002/adma.202406984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 07/15/2024] [Indexed: 07/24/2024]
Abstract
The photovoltaic effect is gaining growing attention in the optoelectronics field due to its low power consumption, sustainable nature, and high efficiency. However, the photovoltaic effects hitherto reported are hindered by the stringent band-alignment requirement or inversion symmetry-breaking, and are challenging for achieving multifunctional photovoltaic properties (such as reconfiguration, nonvolatility, and so on). Here, a novel ionic photovoltaic effect in centrosymmetric CdSb2Se3Br2 that can overcome these limitations is demonstrated. The photovoltaic effect displays significant anisotropy, with the photocurrent being most apparent along the CdBr2 chains while absent perpendicular to them. Additionally, the device shows electrically-induced nonvolatile photocurrent switching characteristics. The photovoltaic effect is attributed to the modulation of the built-in electric field through the migration of Br ions. Using these unique photovoltaic properties, a highly secure circuit with electrical and optical keys is successfully implemented. The findings not only broaden the understanding of the photovoltaic mechanism, but also provide a new material platform for the development of in-memory sensing and computing devices.
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Affiliation(s)
- Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Chen Pan
- Institute of Interdisciplinary of Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Yan Sun
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Xingjian Yangdong
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yunxin Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xingyu Song
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Pengbin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shi-Jun Liang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Feng Miao
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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10
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Cheng T, Meng Y, Luo M, Xian J, Luo W, Wang W, Yue F, Ho JC, Yu C, Chu J. Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403129. [PMID: 39030967 DOI: 10.1002/smll.202403129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 06/17/2024] [Indexed: 07/22/2024]
Abstract
The strategic integration of low-dimensional InAs-based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs-based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single-atomic-layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs-based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs-based materials and the working principles of InAs-based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs-based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi-functional applications, and incorporating deep learning into first-principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.
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Affiliation(s)
- Tiantian Cheng
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Yuxin Meng
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Man Luo
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Jiachi Xian
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Wenjin Luo
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Weijun Wang
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Fangyu Yue
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Chenhui Yu
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Junhao Chu
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
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11
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Li C, Sang D, Ge S, Zou L, Wang Q. Recent Excellent Optoelectronic Applications Based on Two-Dimensional WS 2 Nanomaterials: A Review. Molecules 2024; 29:3341. [PMID: 39064919 PMCID: PMC11280397 DOI: 10.3390/molecules29143341] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2024] [Revised: 07/05/2024] [Accepted: 07/13/2024] [Indexed: 07/28/2024] Open
Abstract
Tungsten disulfide (WS2) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic devices due to its high carrier mobility, high absorption coefficient, large exciton binding energy, polarized light emission, high surface-to-volume ratio, and tunable band gap. These properties contribute to its excellent photoluminescence and high anisotropy. These characteristics render WS2 an advantageous material for applications in light-emitting devices, memristors, and numerous other devices. This article primarily reviews the most recent advancements in the field of optoelectronic devices based on two-dimensional (2D) nano-WS2. A variety of advanced devices have been considered, including light-emitting diodes (LEDs), sensors, field-effect transistors (FETs), photodetectors, field emission devices, and non-volatile memory. This review provides a guide for improving the application of 2D WS2 through improved methods, such as introducing defects and doping processes. Moreover, it is of great significance for the development of transition-metal oxides in optoelectronic applications.
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Affiliation(s)
| | - Dandan Sang
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | | | | | - Qinglin Wang
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
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12
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Zhang X, Li X, Cheng Z, Chen A, Wang P, Wang X, Lei X, Bian Q, Li S, Yuan B, Gao J, Li FS, Pan M, Liu F. Large-scale 2D heterostructures from hydrogen-bonded organic frameworks and graphene with distinct Dirac and flat bands. Nat Commun 2024; 15:5934. [PMID: 39009575 PMCID: PMC11250822 DOI: 10.1038/s41467-024-50211-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 07/03/2024] [Indexed: 07/17/2024] Open
Abstract
The current strategies for building 2D organic-inorganic heterojunctions involve mostly wet-chemistry processes or exfoliation and transfer, leading to interface contaminations, poor crystallizing, or limited size. Here we show a bottom-up procedure to fabricate 2D large-scale heterostructure with clean interface and highly-crystalline sheets. As a prototypical example, a well-ordered hydrogen-bonded organic framework is self-assembled on the highly-oriented-pyrolytic-graphite substrate. The organic framework adopts a honeycomb lattice with faulted/unfaulted halves in a unit cell, resemble to molecular "graphene". Interestingly, the topmost layer of substrate is self-lifted by organic framework via strong interlayer coupling, to form effectively a floating organic framework/graphene heterostructure. The individual layer of heterostructure inherits its intrinsic property, exhibiting distinct Dirac bands of graphene and narrow bands of organic framework. Our results demonstrate a promising approach to fabricate 2D organic-inorganic heterostructure with large-scale uniformity and highly-crystalline via the self-lifting effect, which is generally applicable to most of van der Waals materials.
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Affiliation(s)
- Xin Zhang
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China
| | - Xiaoyin Li
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Zhengwang Cheng
- School of Science, Hubei University of Technology, Wuhan, 430068, China
| | - Aixi Chen
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Pengdong Wang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Xingyue Wang
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China
| | - Xiaoxu Lei
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Qi Bian
- School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Shaojian Li
- School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Bingkai Yuan
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Jianzhi Gao
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China.
| | - Fang-Sen Li
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China.
| | - Minghu Pan
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China.
- School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA.
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13
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Soni A, Ghosal S, Kundar M, Pati SK, Pal SK. Long-Lived Interlayer Excitons in WS 2/Ruddlesden-Popper Perovskite van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:35841-35851. [PMID: 38935613 DOI: 10.1021/acsami.4c07346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and perovskites hold substantial promise for various optoelectronic applications such as light emission, photodetection, and energy harvesting. However, each of these materials possesses certain limitations that can be overcome by synergistically combining them to form heterostructures, thereby unveiling intriguing optical properties. In this study, we present an uncomplicated technique for crafting a van der Waals (vdW) heterojunction comprising monolayer WS2 and a Ruddlesden-Popper (RP) perovskite, namely (TEA)2PbI4. By utilizing ultrafast transient absorption (TA) spectroscopy, we explored the charge carrier dynamics within the WS2/(TEA)2PbI4 heterostructure. Our findings uncover a type-II band alignment in the heterostructure, facilitating rapid (within 260 fs) hole transfer from WS2 to the perovskite and leading to the formation of interlayer excitons (IXs) with a much longer lifetime (728 ps). This strategic approach has the potential to contribute to the development of hybrid systems aimed at achieving high-performance optoelectronic devices.
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Affiliation(s)
- Ashish Soni
- School of Physical Sciences, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
- Advanced Materials Research Centre, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
| | - Supriya Ghosal
- Theoretical Sciences Unit, School of Advanced Materials (SAMat), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangalore 560064, India
| | - Milon Kundar
- School of Physical Sciences, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
- Advanced Materials Research Centre, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
| | - Swapan K Pati
- Theoretical Sciences Unit, School of Advanced Materials (SAMat), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangalore 560064, India
| | - Suman Kalyan Pal
- School of Physical Sciences, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
- Advanced Materials Research Centre, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
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14
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Choi KH, Lee SH, Kang J, Zhang X, Jeon J, Bang HS, Kim Y, Kim D, Kim KI, Kim YH, Oh HS, Chang J, Lee JH, Yu HK, Choi JY. Scalable Fabrication of Quasi-One-Dimensional van der Waals Ta 2Pt 3Se 8 Nanowire Thin Films via Solution Processing for NO 2 Gas Sensing over Large Areas. ACS APPLIED MATERIALS & INTERFACES 2024; 16:35463-35473. [PMID: 38946100 DOI: 10.1021/acsami.4c05091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
Solution-based processing of van der Waals (vdW) one- (1D) and two-dimensional (2D) materials is an effective strategy to obtain high-quality molecular chains or atomic sheets in a large area with scalability. In this work, quasi-1D vdW Ta2Pt3Se8 was exfoliated via liquid phase exfoliation (LPE) to produce a stably dispersed Ta2Pt3Se8 nanowire solution. In order to screen the optimal exfoliation solvent, nine different solvents were employed with different total surface tensions and polar/dispersive (P/D) component (P/D) ratios. The LPE behavior of Ta2Pt3Se8 was elucidated by matching the P/D ratios between Ta2Pt3Se8 and the applied solvent, resulting in N-methyl-2-pyrrolidone (NMP) as an optimal solvent owing to the well-matched total surface tension and P/D ratio. Subsequently, Ta2Pt3Se8 nanowire thin films are manufactured via vacuum filtration using a Ta2Pt3Se8/NMP dispersion. Then, gas sensing devices are fabricated onto the Ta2Pt3Se8 nanowire thin films, and gas sensing property toward NO2 is evaluated at various thin-film thicknesses. A 50 nm thick Ta2Pt3Se8 thin-film device exhibited a percent response of 25.9% at room temperature and 32.4% at 100 °C, respectively. In addition, the device showed complete recovery within 14.1 min at room temperature and 3.5 min at 100 °C, respectively.
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Affiliation(s)
- Kyung Hwan Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sang Hoon Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jinsu Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Xiaojie Zhang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiho Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Hyeon-Suk Bang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Yeongjin Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Dahoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kyung In Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yeong Hyeop Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyung-Suk Oh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jongwha Chang
- Department of Pharmaceutical Sciences, Irma Lerma Rangel School of Pharmacy, Texas A&M University, College Station, Texas 77843, United States
| | - Jae-Hyun Lee
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hak Ki Yu
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Young Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
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15
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Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH. Boltzmann Switching MoS 2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2314274. [PMID: 38647521 DOI: 10.1002/adma.202314274] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Revised: 04/07/2024] [Indexed: 04/25/2024]
Abstract
A gate stack that facilitates a high-quality interface and tight electrostatic control is crucial for realizing high-performance and low-power field-effect transistors (FETs). However, when constructing conventional metal-oxide-semiconductor structures with two-dimensional (2D) transition metal dichalcogenide channels, achieving these requirements becomes challenging due to inherent difficulties in obtaining high-quality gate dielectrics through native oxidation or film deposition. Here, a gate-dielectric-less device architecture of van der Waals Schottky gated metal-semiconductor FETs (vdW-SG MESFETs) using a molybdenum disulfide (MoS2) channel and surface-oxidized metal gates such as nickel and copper is reported. Benefiting from the strong SG coupling, these MESFETs operate at remarkably low gate voltages, <0.5 V. Notably, they also exhibit Boltzmann-limited switching behavior featured by a subthreshold swing of ≈60 mV dec-1 and negligible hysteresis. These ideal FET characteristics are attributed to the formation of a Fermi-level (EF) pinning-free gate stack at the Schottky-Mott limit. Furthermore, authors experimentally and theoretically confirm that EF depinning can be achieved by suppressing both metal-induced and disorder-induced gap states at the interface between the monolithic-oxide-gapped metal gate and the MoS2 channel. This work paves a new route for designing high-performance and energy-efficient 2D electronics.
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Affiliation(s)
- Yeon Ho Kim
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Wei Jiang
- Department of Electrical and Computer Engineering, University of Minnesota, Minnesota, 55455, USA
| | - Donghun Lee
- Department of Chemistry, Kookmin University, Seoul, 02707, Republic of Korea
| | - Donghoon Moon
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hyun-Young Choi
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - June-Chul Shin
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yeonsu Jeong
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Jong Chan Kim
- UNIST Central Research Facilities (UCRF) and Department of Materials Science and Engineering, UNIST, Ulsan, 44919, Republic of Korea
| | - Jaeho Lee
- Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Woong Huh
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Chang Yong Han
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Jae-Pil So
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Seong Been Kim
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Hyun Cheol Koo
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities (UCRF) and Department of Materials Science and Engineering, UNIST, Ulsan, 44919, Republic of Korea
| | - Seongil Im
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minnesota, 55455, USA
| | - Chul-Ho Lee
- Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
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16
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Zhang L, Wang Y, Chu A, Zhang Z, Liu M, Shen X, Li B, Li X, Yi C, Song R, Liu Y, Zhuang X, Duan X. Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing. Nat Commun 2024; 15:5484. [PMID: 38942769 PMCID: PMC11213932 DOI: 10.1038/s41467-024-49364-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2024] [Accepted: 06/03/2024] [Indexed: 06/30/2024] Open
Abstract
The tunable properties of halide perovskite/two dimensional (2D) semiconductor mixed-dimensional van der Waals heterostructures offer high flexibility for innovating optoelectronic and photonic devices. However, the general and robust growth of high-quality monocrystalline halide perovskite/2D semiconductor heterostructures with attractive optical properties has remained challenging. Here, we demonstrate a universal van der Waals heteroepitaxy strategy to synthesize a library of facet-specific single-crystalline halide perovskite/2D semiconductor (multi)heterostructures. The obtained heterostructures can be broadly tailored by selecting the coupling layer of interest, and can include perovskites varying from all-inorganic to organic-inorganic hybrid counterparts, individual transition metal dichalcogenides or 2D heterojunctions. The CsPbI2Br/WSe2 heterostructures demonstrate ultrahigh optical gain coefficient, reduced gain threshold and prolonged gain lifetime, which are attributed to the reduced energetic disorder. Accordingly, the self-organized halide perovskite/2D semiconductor heterostructure lasers show highly reproducible single-mode lasing with largely reduced lasing threshold and improved stability. Our findings provide a high-quality and versatile material platform for probing unique optoelectronic and photonic physics and developing further electrically driven on-chip lasers, nanophotonic devices and electronic-photonic integrated systems.
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Affiliation(s)
- Liqiang Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Anshi Chu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan, P. R. China
| | - Miaomiao Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xiaohua Shen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xu Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Chen Yi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Rong Song
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Yingying Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xiujuan Zhuang
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, Hunan, P. R. China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China.
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17
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Wu JY, Jiang HY, Wen ZY, Wang CR, Zhang T. Van der Waals Schottky Junction Photodetector with Ultrahigh Rectifying Ratio and Switchable Photocurrent Generation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:32357-32366. [PMID: 38877995 DOI: 10.1021/acsami.4c04023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Metal-semiconductor junctions play an important role in the development of electronic and optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) materials is promising for self-powered photodetection with fast response speed and large signal-to-noise ratio. However, it usually suffers from an uncontrolled Schottky barrier due to the Fermi level pinning effect arising from the interface states. In this work, all-2D Schottky junctions with near-ideal Fermi level depinning are realized, attributed to the high-quality interface between 2D semimetals and semiconductors. We further demonstrate asymmetric diodes based on multilayer graphene/MoS2/PtSe2 with a current rectification ratio exceeding 105 and an ideality factor of 1.2. Scanning photocurrent mapping shows that the photocurrent generation mechanism in the heterostructure switches from photovoltaic effect to photogating effect at varying drain biases, indicating both energy conversion and optical sensing are realized in a single device. In the photovoltaic mode, the photodetector is self-powered with a response time smaller than 100 μs under the illumination of a 405 nm laser. In the photogating mode, the photodetector exhibits a high responsivity up to 460 A/W originating from a high photogain. Finally, the photodetector is employed for single-pixel imaging, demonstrating its high-contrast photodetection ability. This work provides insight into the development of high-performance self-powered photodetectors based on 2D Schottky junctions.
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Affiliation(s)
- Jing-Yuan Wu
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Hai-Yang Jiang
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Zhao-Yang Wen
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Chun-Rui Wang
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Tong Zhang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
- Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, and School of Instrument Science and Engineering, Southeast University, Nanjing 210096, China
- Suzhou Key Laboratory of Metal Nano-Optoelectronic Technology, Southeast University Suzhou Campus, Suzhou 215123, China
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18
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Ruiz AM, Rivero-Carracedo G, Rybakov A, Dey S, Baldoví JJ. Towards molecular controlled magnonics. NANOSCALE ADVANCES 2024; 6:3320-3328. [PMID: 38933864 PMCID: PMC11197403 DOI: 10.1039/d4na00230j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 05/01/2024] [Indexed: 06/28/2024]
Abstract
Magnonics is an emerging field broadly recognized as a paradigm shift for information technologies based on the use of spin waves. However, the low flexibility and variety of the existing systems still hamper their applications. Herein, we propose an unprecedented chemical approach to magnonics based on the creation of hybrid molecular/2D heterostructures. We analyse the modulation of the magnetic properties, magnon dispersion and spin dynamics of a single layer of CrSBr after the deposition of sublimable organic molecules via first-principles calculations. Our results predict a modulation of magnetic exchange, a shift in the magnon frequencies and an enhancement of their group velocities up to ∼7%. Interestingly, we find a linear correlation between these effects and the donor character of the molecules. This will pave the way for the design of a new class of magnonic materials that can be selectively tailored by a chemical approach.
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Affiliation(s)
- Alberto M Ruiz
- Instituto de Ciencia Molecular, Universitat de València 46980 Paterna Spain
| | | | - Andrey Rybakov
- Instituto de Ciencia Molecular, Universitat de València 46980 Paterna Spain
| | - Sourav Dey
- Instituto de Ciencia Molecular, Universitat de València 46980 Paterna Spain
| | - José J Baldoví
- Instituto de Ciencia Molecular, Universitat de València 46980 Paterna Spain
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19
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Wang X, Kim K, Derby BK, McGuckin T, Calderón GA, Pettes MT, Hwang J, Kim Y, Park J, Chen A, Kang K, Yoo J. Structural alignment of ZnO columns across multiple monolayer MoS 2 layers as compliant substrates. NANOSCALE 2024; 16:11156-11162. [PMID: 38623744 DOI: 10.1039/d4nr00724g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
Understanding the behavior of materials in multi-dimensional architectures composed of atomically thin two-dimensional (2D) materials and three-dimensional (3D) materials has become mandatory for progress in materials preparation via various epitaxy techniques, such as van der Waals and remote epitaxy methods. We investigated the growth behavior of ZnO on monolayer MoS2 as a model system to study the growth of a 3D material on a 2D material, which is beyond the scope of remote and van der Waals epitaxy. The study revealed column-to-column alignment and inversion of crystallinity, which can be explained by combinatorial epitaxy, grain alignment across an atomically sharp interface, and a compliant substrate. The growth study enabled the formation of a ZnO/MoS2 heterostructure with type-I band alignment. Our findings will have a scientific impact on realizing 2D/3D heterostructures for practical device applications.
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Affiliation(s)
- Xuejing Wang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
| | - Kyungtae Kim
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
| | - Benjamin K Derby
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
| | | | - Gabriel A Calderón
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH 43210, USA
| | - Michael T Pettes
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
| | - Jinwoo Hwang
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH 43210, USA
| | - Yeonhoo Kim
- Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science, Daejeon 34133, Republic of Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Aiping Chen
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
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20
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Xiao K, Zhang S, Zhang K, Zhang L, Wen Y, Tian S, Xiao Y, Shi C, Hou S, Liu C, Han L, He J, Tang W, Li G, Wang L, Chen X. Room-Temperature Band-Aligned Infrared Heterostructures for Integrable Sensing and Communication. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401716. [PMID: 38840455 DOI: 10.1002/advs.202401716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 04/07/2024] [Indexed: 06/07/2024]
Abstract
The demand for miniaturized and integrated multifunctional devices drives the progression of high-performance infrared photodetectors for diverse applications, including remote sensing, air defense, and communications, among others. Nonetheless, infrared photodetectors that rely solely on single low-dimensional materials often face challenges due to the limited absorption cross-section and suboptimal carrier mobility, which can impair sensitivity and prolong response times. Here, through experimental validation is demonstrated, precise control over energy band alignment in a type-II van der Waals heterojunction, comprising vertically stacked 2D Ta2NiSe5 and the topological insulator Bi2Se3, where the configuration enables polarization-sensitive, wide-spectral-range photodetection. Experimental evaluations at room temperature reveal that the device exhibits a self-powered responsivity of 0.48 A·W-1, a specific directivity of 3.8 × 1011 cm·Hz1/2·W-1, a response time of 151 µs, and a polarization ratio of 2.83. The stable and rapid photoresponse of the device underpins the utility in infrared-coded communication and dual-channel imaging, showing the substantial potential of the detector. These findings articulate a systematic approach to developing miniaturized, multifunctional room-temperature infrared detectors with superior performance metrics and enhanced capabilities for multi-information acquisition.
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Affiliation(s)
- Kening Xiao
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Shi Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Kaixuan Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Libo Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Yuanfeng Wen
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Shijian Tian
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Yunlong Xiao
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Chaofan Shi
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Shicong Hou
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Changlong Liu
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Li Han
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Jiale He
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Weiwei Tang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Guanhai Li
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Lin Wang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Xiaoshuang Chen
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
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21
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Cao H, Hu T, Zhang J, Zhao D, Chen Y, Wang X, Yang J, Zhang Y, Tang X, Bai W, Shen H, Wang J, Chu J. Electrically Tunable Multiple-Effects Synergistic and Boosted Photoelectric Performance in Te/WSe 2 Mixed-Dimensional Heterojunction Phototransistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400018. [PMID: 38502873 PMCID: PMC11165519 DOI: 10.1002/advs.202400018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2024] [Revised: 02/19/2024] [Indexed: 03/21/2024]
Abstract
Mix-dimensional heterojunctions (MDHJs) photodetectors (PDs) built from bulk and 2D materials are the research focus to develop hetero-integrated and multifunctional optoelectronic sensor systems. However, it is still an open issue for achieving multiple effects synergistic characteristics to boost sensitivity and enrich the prospect in artificial bionic systems. Herein, electrically tunable Te/WSe2 MDHJs phototransistors are constructed, and an ultralow dark current below 0.1 pA and a large on/off rectification ratio of 106 is achieved. Photoconductive, photovoltaic, and photo-thermoelectric conversions are simultaneously demonstrated by tuning the gate and bias. By these synergistic effects, responsivity and detectivity respectively reach 13.9 A W-1 and 1.37 × 1012 Jones with 400 times increment. The Te/WSe2 MDHJs PDs can function as artificial bionic visual systems due to the comparable response time to those of the human visual system and the presence of transient positive and negative response signals. This work offers an available strategy for intelligent optoelectronic devices with hetero-integration and multifunctions.
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Affiliation(s)
- Hechun Cao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Tao Hu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jiyue Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Dongyang Zhao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Yan Chen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
| | - Xudong Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuanShanxi030006P. R. China
| | - Wei Bai
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Hong Shen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jianlu Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
- Frontier Institute of Chip and SystemFudan UniversityShanghai200433P. R. China
| | - Junhao Chu
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
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22
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Kerwin B, Liu SE, Sadhukhan T, Dasgupta A, Jones LO, López-Arteaga R, Zeng TT, Facchetti A, Schatz GC, Hersam MC, Marks TJ. Trifluoromethylation of 2D Transition Metal Dichalcogenides: A Mild Functionalization and Tunable p-Type Doping Method. Angew Chem Int Ed Engl 2024; 63:e202403494. [PMID: 38551580 DOI: 10.1002/anie.202403494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Indexed: 04/24/2024]
Abstract
Chemical modification is a powerful strategy for tuning the electronic properties of 2D semiconductors. Here we report the electrophilic trifluoromethylation of 2D WSe2 and MoS2 under mild conditions using the reagent trifluoromethyl thianthrenium triflate (TTT). Chemical characterization and density functional theory calculations reveal that the trifluoromethyl groups bind covalently to surface chalcogen atoms as well as oxygen substitution sites. Trifluoromethylation induces p-type doping in the underlying 2D material, enabling the modulation of charge transport and optical emission properties in WSe2. This work introduces a versatile and efficient method for tailoring the optical and electronic properties of 2D transition metal dichalcogenides.
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Affiliation(s)
- Brendan Kerwin
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Stephanie E Liu
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Tumpa Sadhukhan
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- Department of Chemistry, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - Anushka Dasgupta
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Leighton O Jones
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Rafael López-Arteaga
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Thomas T Zeng
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, United States
| | - George C Schatz
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Mark C Hersam
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
- Department of Electrical and Computer Engineering, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL-60208-3113, USA
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University 2220, Campus Drive, Evanston, IL-60208-3108, USA
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23
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Shen X, Lin X, Peng Y, Zhang Y, Long F, Han Q, Wang Y, Han L. Two-Dimensional Materials for Highly Efficient and Stable Perovskite Solar Cells. NANO-MICRO LETTERS 2024; 16:201. [PMID: 38782775 PMCID: PMC11116351 DOI: 10.1007/s40820-024-01417-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Accepted: 04/11/2024] [Indexed: 05/25/2024]
Abstract
Perovskite solar cells (PSCs) offer low costs and high power conversion efficiency. However, the lack of long-term stability, primarily stemming from the interfacial defects and the susceptible metal electrodes, hinders their practical application. In the past few years, two-dimensional (2D) materials (e.g., graphene and its derivatives, transitional metal dichalcogenides, MXenes, and black phosphorus) have been identified as a promising solution to solving these problems because of their dangling bond-free surfaces, layer-dependent electronic band structures, tunable functional groups, and inherent compactness. Here, recent progress of 2D material toward efficient and stable PSCs is summarized, including its role as both interface materials and electrodes. We discuss their beneficial effects on perovskite growth, energy level alignment, defect passivation, as well as blocking external stimulus. In particular, the unique properties of 2D materials to form van der Waals heterojunction at the bottom interface are emphasized. Finally, perspectives on the further development of PSCs using 2D materials are provided, such as designing high-quality van der Waals heterojunction, enhancing the uniformity and coverage of 2D nanosheets, and developing new 2D materials-based electrodes.
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Affiliation(s)
- Xiangqian Shen
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
- Xinjiang Key Laboratory of Solid State Physics and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi, 830046, People's Republic of China
| | - Xuesong Lin
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Yong Peng
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, People's Republic of China
| | - Yiqiang Zhang
- College of Chemistry, Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Fei Long
- Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, School of Materials Science and Engineering, Guilin University of Technology, Guilin, 541004, People's Republic of China
| | - Qifeng Han
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Yanbo Wang
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.
| | - Liyuan Han
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.
- Special Division of Environmental and Energy Science, College of Arts and Sciences, Komaba Organization for Educational Excellence, University of Tokyo, Tokyo, 153-8902, Japan.
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24
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Chen C, Zhou Y, Tong L, Pang Y, Xu J. Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400332. [PMID: 38739927 DOI: 10.1002/adma.202400332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 04/19/2024] [Indexed: 05/16/2024]
Abstract
The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization flipping, and ultra-low power consumption of the 2D ferroelectrics. Here, the recent progress of 2D ferroelectric devices for in-sensing and in-memory neuromorphic computing is reviewed. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics-integrated 2D devices and active ferroelectrics-integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor-memory and computing integration application field, leading to new possibilities for modern electronics.
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Affiliation(s)
- Chunsheng Chen
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Jianbin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
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25
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Xu B, Guo D, Dong W, Gao H, Zhu P, Wang Z, Watanabe K, Taniguchi T, Luo Z, Zheng F, Zheng S, Zhou J. Gap State-Modulated Van Der Waals Short-Term Memory with Broad Band Negative Photoconductance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309626. [PMID: 38098431 DOI: 10.1002/smll.202309626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Revised: 11/05/2023] [Indexed: 05/25/2024]
Abstract
Floating gate memory (FGM), composed of van der Waals (vdW) junctions with an atomically thin floating layer for charge storage, is widely employed to develop logic-in memories and in-sensor computing devices. Most research efforts of FGM are spent on achieving long-term charge storage and fast reading/writing for flash and random-access memory. However, dynamic modulation of memory time via a tunneling barrier and vdW interfaces, which is critical for synaptic computing and machine vision, is still lacking. Here, a van der Waals short-term memory with tunable memory windows and retention times from milliseconds to thousands of seconds is reported, which is approximately exponentially proportional to the thickness h-BN (hexagonal boron nitride) barrier. The specific h-BN barrier with fruitful gap states provides charge release channels for trapped charges, making the vdW device switchable between positive photoconductance and negative photoconductance with a broadband light from IR to UV range. The dynamic short-term memory with tunable photo response highlights the design strategy of novel vdW memory vis interface engineering for further intelligent information storage and optoelectronic detection.
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Affiliation(s)
- Boyu Xu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dan Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Weikang Dong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Huiying Gao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Zhaochu Luo
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Fawei Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
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26
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Yu L, Liu X, Chen M, Peng J, Xu T, Gao W, Yang M, Du C, Yao J, Song W, Dong H, Li J, Zheng Z. Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22207-22216. [PMID: 38629723 DOI: 10.1021/acsami.4c03191] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2024]
Abstract
Two-dimensional (2D) gallium selenide (GaSe) holds great promise for pioneering advancements in photodetection due to its exceptional electronic and optoelectronic properties. However, in conventional photodetectors, 2D GaSe only functions as a photosensitive layer, failing to fully exploit its inherent photosensitive potential. Herein, we propose an ultrasensitive photodetector based on out-of-plane 2D GaSe/MoSe2 heterostructure. Through interfacial engineering, 2D GaSe serves not only as the photosensitive layer but also as the photoconductive gain and passivation layer, introducing a photogating effect and extending the lifetime of photocarriers. Capitalizing on these features, the device exhibits exceptional photodetection performance, including a responsivity of 28 800 A/W, specific detectivity of 7.1 × 1014 Jones, light on/off ratio of 1.2 × 106, and rise/fall time of 112.4/426.8 μs. Moreover, high-resolution imaging under various wavelengths is successfully demonstrated using this device. Additionally, we showcase the generality of this device design by activating the photosensitive potential of 2D GaSe with other transition metal dichalcogenides (TMDCs) such as WSe2, WS2, and MoS2. This work provides inspiration for future development in high-performance photodetectors, shining a spotlight on the potential of 2D GaSe and its heterostructure.
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Affiliation(s)
- Liang Yu
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Xinyue Liu
- Guangdong Provincial Key Laboratory of Nanophotonic Manipulation, Institute of Nanophotonics, Jinan University, Guangzhou 511443, P. R. China
| | - Meifei Chen
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Junhao Peng
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Ting Xu
- School of Material Science & Engineering, Shaanxi University of Science & Technology, Xi'an 710021, P. R. China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, P.R. China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, P.R. China
| | - Chun Du
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communication, Institute of Photonics Technology, Jinan University, Guangzhou 510632, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Wei Song
- Analysis and Test Center, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Huafeng Dong
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
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27
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Gao Z, Iqbal A, Hassan T, Hui S, Wu H, Koo CM. Tailoring Built-In Electric Field in a Self-Assembled Zeolitic Imidazolate Framework/MXene Nanocomposites for Microwave Absorption. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311411. [PMID: 38288859 DOI: 10.1002/adma.202311411] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Revised: 01/19/2024] [Indexed: 02/13/2024]
Abstract
Heterointerface engineering, which plays a pivotal role in developing advanced microwave-absorbing materials, is employed to design zeolitic imidazolate framework (ZIF)-MXene nanocomposites. The ZIF-MXene composites are prepared by electrostatic self-assembly of negatively charged titanium carbide MXene flakes and positively charged Co-containing ZIF nanomaterials. This approach effectively creates abundant Mott-Schottky heterointerfaces exhibiting a robust built-in electric field (BIEF) effect, as evidenced by experimental and theoretical analyses, leading to a notable attenuation of electromagnetic energy. Systematic manipulation of the BIEF-exhibiting heterointerface, achieved through topological modulation of the ZIF, proficiently alters charge separation, facilitates electron migration, and ultimately enhances polarization relaxation loss, resulting in exceptional electromagnetic wave absorption performance (reflection loss RLmin = -47.35 dB and effective absorption bandwidth fE = 6.32 GHz). The present study demonstrates an innovative model system for elucidating the interfacial polarization mechanisms and pioneers a novel approach to developing functional materials with electromagnetic characteristics through spatial charge engineering.
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Affiliation(s)
- Zhenguo Gao
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
- School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Aamir Iqbal
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Tufail Hassan
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Shengchong Hui
- MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 10072, China
| | - Hongjing Wu
- MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 10072, China
| | - Chong Min Koo
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
- School of Chemical Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
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28
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Mishra S, Liu F, Shakthivel D, Rai B, Georgiev V. Molecular dynamics simulation-based study to analyse the properties of entrapped water between gold and graphene 2D interfaces. NANOSCALE ADVANCES 2024; 6:2371-2379. [PMID: 38694470 PMCID: PMC11059550 DOI: 10.1039/d3na00878a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Accepted: 03/17/2024] [Indexed: 05/04/2024]
Abstract
Heterostructures based on graphene and other 2D materials have received significant attention in recent years. However, it is challenging to fabricate them with an ultra-clean interface due to unwanted foreign molecules, which usually get introduced during their transfer to a desired substrate. Clean nanofabrication is critical for the utilization of these materials in 2D nanoelectronics devices and circuits, and therefore, it is important to understand the influence of the "non-ideal" interface. Inspired by the wet-transfer process of the CVD-grown graphene, herein, we present an atomistic simulation of the graphene-Au interface, where water molecules often get trapped during the transfer process. By using molecular dynamics (MD) simulations, we investigated the structural variations of the trapped water and the traction-separation curve derived from the graphene-Au interface at 300 K. We observed the formation of an ice-like structure with square-ice patterns when the thickness of the water film was <5 Å. This could cause undesirable strain in the graphene layer and hence affect the performance of devices developed from it. We also observed that at higher thicknesses the water film is predominantly present in the liquid state. The traction separation curve showed that the adhesion of graphene is better in the presence of an ice-like structure. This study explains the behaviour of water confined at the nanoscale region and advances our understanding of the graphene-Au interface in 2D nanoelectronics devices and circuits.
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Affiliation(s)
- Shashank Mishra
- James Watt School of Engineering, University of Glasgow G12 8QQ Glasgow UK
| | - Fengyuan Liu
- James Watt School of Engineering, University of Glasgow G12 8QQ Glasgow UK
| | | | - Beena Rai
- TCS Research, Tata Consultancy Services Limited Pune 411013 India
| | - Vihar Georgiev
- James Watt School of Engineering, University of Glasgow G12 8QQ Glasgow UK
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29
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Qu Y, Xu H, Hu J, Wang F, Liu Y. Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain. Sci Rep 2024; 14:9414. [PMID: 38658733 PMCID: PMC11043405 DOI: 10.1038/s41598-024-60190-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Accepted: 04/19/2024] [Indexed: 04/26/2024] Open
Abstract
The h-BN/diamond mix-dimensional heterostructure has broad application prospects in the fields of optoelectronic devices and power electronic devices. In this paper, the electronic properties and band offsets of hexagonal boron nitride (h-BN)/(H, O, F, OH)-diamond (111) heterostructures were studied by first-principles calculations under biaxial strain. The results show that different terminals could significantly affect the interface binding energy and charge transfer of h-BN/diamond heterostructure. All heterostructures exhibited semiconductor properties. The h-BN/(H, F)-diamond systems were indirect bandgap, while h-BN/(O, OH)-diamond systems were direct bandgap. In addition, the four systems all formed type-II heterostructures, among which h-BN/H-diamond had the largest band offset, indicating that the system was more conducive to the separation of electrons and holes. Under biaxial strain the bandgap values of the h-BN/H-diamond system decreased, and the band type occurred direct-indirect transition. The bandgap of h-BN/(O, F, OH)-diamond system increased linearly in whole range, and the band type only transformed under large strain. On the other hand, biaxial strain could significantly change the band offset of h-BN/diamond heterostructure and promote the application of this heterostructure in different fields. Our work provides theoretical guidance for the regulation of the electrical properties of h-BN/diamond heterostructures by biaxial strain.
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Affiliation(s)
- Yipu Qu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
| | - Hang Xu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China
| | - Jiping Hu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China
| | - Fang Wang
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Research Institute of Industrial Technology Co. Ltd, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Zhengzhou Way Do Electronics Co. Ltd, Zhengzhou, 450001, Henan, People's Republic of China.
| | - Yuhuai Liu
- National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Research Institute of Industrial Technology Co. Ltd, Zhengzhou University, Zhengzhou, 450001, Henan, People's Republic of China.
- Zhengzhou Way Do Electronics Co. Ltd, Zhengzhou, 450001, Henan, People's Republic of China.
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30
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Nitika, Ahlawat DS, Arora S. Meta-GGA study of 2D AlN/BN planer heterostructure and performance enhancement via strain engineering. J Mol Model 2024; 30:144. [PMID: 38653800 DOI: 10.1007/s00894-024-05948-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2024] [Accepted: 04/17/2024] [Indexed: 04/25/2024]
Abstract
CONTEXT The 2D AlN/BN planer heterostructure is a promising wide band gap semiconductor, but systematic studies of its bandgap and optical characteristics under applied strain are scarce. Here, the engineering property of 2D AlN/BN comprising bandgap nature transition and optical absorption capability (from unstrained to strained) have been investigated using density functional theory calculations. The formation energy calculations confirm the stability of the simulated nanoheterostructure. The electronic band structure calculations demonstrate that nanoheterostructure is an indirect bandgap material with a large bandgap of 5.26 eV, which can be modified effectively by applying strain. According to the calculations, the transition from indirect to direct band gap behavior has been observed at +15% biaxial strain with 2.71 eV band gap energy. Meanwhile, calculations for optical absorption and dielectric function reveal that the system has significant absorption peaks in the ultraviolet region which are very sensitive to applied strain. As strain increases, the first absorption peaks are shifted towards a lower energy range from 5.73 eV (Ꜫ= 0 %) to 3.76 eV (Ꜫ = +15%), which features an enhancement of optical absorption for solar and solar-blind regions. Furthermore, we determined that the band edge positions in 2D AlN/BN straddled the water redox potential under strain, indicating its effectiveness as a proficient photocatalyst. These characteristics make 2D AlN/BN planer nanoheterostructure a promising candidate for applications in optoelectronics and photocatalytic water splitting performance. METHODS First principles computations based on density functional theory were employed to carry out all the calculations with a self-consistent approach. For solving the Kohn-Sham equations, the first principles dependent full-potential linearized augmented plane wave scheme were adopted. For addressing the exchange-correlation effects, the generalized gradient approximation of PBEsol functional was used. To prevent interaction between the periodic images, we have inserted a vacuum region of 10 Å in the z-direction. Non-negligible weak dispersion corrections in nanoheterostructure were considered by using the DFT-D3 method of Grimme's. The locally modified Becke-Johnson (lmBJ) exchange potential has also been applied to compute electronic and optical properties in this research to obtain more accurate information.
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Affiliation(s)
- Nitika
- Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055(Hry.), India
| | | | - Sandeep Arora
- Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055(Hry.), India
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31
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Wani SS, Hsu CC, Kuo YZ, Darshana Kumara Kimbulapitiya KM, Chung CC, Cyu RH, Chen CT, Liu MJ, Chaudhary M, Chiu PW, Zhong YL, Chueh YL. Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping Layers. ACS NANO 2024; 18:10776-10787. [PMID: 38587200 PMCID: PMC11044573 DOI: 10.1021/acsnano.3c11025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Revised: 02/23/2024] [Accepted: 03/01/2024] [Indexed: 04/09/2024]
Abstract
The electronic properties of 2D materials are highly influenced by the molecular activity at their interfaces. A method was proposed to address this issue by employing passivation techniques using monolayer MoS2 field-effect transistors (FETs) while preserving high performance. Herein, we have used alkali metal fluorides as dielectric capping layers, including lithium fluoride (LiF), sodium fluoride (NaF), and potassium fluoride (KF) dielectric capping layers, to mitigate the environmental impact of oxygen and water exposure. Among them, the LiF dielectric capping layer significantly improved the transistor performance, specifically in terms of enhanced field effect mobility from 74 to 137 cm2/V·s, increased current density from 17 μA/μm to 32.13 μA/μm at a drain voltage of Vd of 1 V, and decreased subthreshold swing to 0.8 V/dec The results have been analytically verified by X-ray photoelectron spectroscopy (XPS) and Raman, and photoluminescence (PL) spectroscopy, and the demonstrated technique can be extended to other transition metal dichalcogenide (TMD)-based FETs, which can become a prospect for cutting-edge electronic applications. These findings highlight certain important trade-offs and provide insight into the significance of interface control and passivation material choice on the electrical stability, performance, and enhancement of the MoS2 FET.
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Affiliation(s)
- Sumayah-Shakil Wani
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chen Chieh Hsu
- Department
of Physics and Quantum Information Center, Chung Yuan Christian University, Taoyuan, 32034, Taiwan
| | - Yao-Zen Kuo
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Kimbulapitiya Mudiyanselage
Madhusanka Darshana Kumara Kimbulapitiya
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chia-Chen Chung
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Ruei-Hong Cyu
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chieh-Ting Chen
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Ming-Jin Liu
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Mayur Chaudhary
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Po-Wen Chiu
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Institute
of Electronics Engineering, National Tsing
Hua University, Hsinchu, 30013, Taiwan
| | - Yuan-Liang Zhong
- Department
of Physics and Quantum Information Center, Chung Yuan Christian University, Taoyuan, 32034, Taiwan
| | - Yu-Lun Chueh
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
- Department
of Materials Science and Engineering, Korea
University, Seoul 02841, Republic of Korea
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32
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Brotons-Alcázar I, Terreblanche JS, Giménez-Santamarina S, Gutiérrez-Finol GM, Ryder KS, Forment-Aliaga A, Coronado E. Atomic Force Microscopy beyond Topography: Chemical Sensing of 2D Material Surfaces through Adhesion Measurements. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19711-19719. [PMID: 38567570 DOI: 10.1021/acsami.3c19254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Developing new functionalities of two-dimensional materials (2Dms) can be achieved by their chemical modification with a broad spectrum of molecules. This functionalization is commonly studied by using spectroscopies such as Raman, IR, or XPS, but the detection limit is a common problem. In addition, these methods lack detailed spatial resolution and cannot provide information about the homogeneity of the coating. Atomic force microscopy (AFM), on the other hand, allows the study of 2Dms on the nanoscale with excellent lateral resolution. AFM has been extensively used for topographic analysis; however, it is also a powerful tool for evaluating other properties far beyond topography such as mechanical ones. Therefore, herein, we show how AFM adhesion mapping of transition metal chalcogenide 2Dms (i.e., MnPS3 and MoS2) permits a close inspection of the surface chemical properties. Moreover, the analysis of adhesion as relative values allows a simple and robust strategy to distinguish between bare and functionalized layers and significantly improves the reproducibility between measurements. Remarkably, it is also confirmed by statistical analysis that adhesion values do not depend on the thickness of the layers, proving that they are related only to the most superficial part of the materials. In addition, we have implemented an unsupervised classification method using k-means clustering, an artificial intelligence-based algorithm, to automatically classify samples based on adhesion values. These results demonstrate the potential of simple adhesion AFM measurements to inspect the chemical nature of 2Dms and may have implications for the broad scientific community working in the field.
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Affiliation(s)
- Isaac Brotons-Alcázar
- Instituto de Ciencia Molecular (ICMol), Universitat de València, C/Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain
| | - Jason S Terreblanche
- Center for Sustainable Materials Processing, School of Chemistry, University of Leicester, University Road, LE1 7RH Leicester, U.K
| | - Silvia Giménez-Santamarina
- Instituto de Ciencia Molecular (ICMol), Universitat de València, C/Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain
| | - Gerliz M Gutiérrez-Finol
- Instituto de Ciencia Molecular (ICMol), Universitat de València, C/Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain
| | - Karl S Ryder
- Center for Sustainable Materials Processing, School of Chemistry, University of Leicester, University Road, LE1 7RH Leicester, U.K
| | - Alicia Forment-Aliaga
- Instituto de Ciencia Molecular (ICMol), Universitat de València, C/Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol), Universitat de València, C/Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain
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33
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Chen C, Yurtsever A, Li P, Sun L. Two-Dimensional Layered Nanomaterials Steering Self-Assembly of Dodecapeptides with Three Building Blocks. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19699-19710. [PMID: 38588069 DOI: 10.1021/acsami.3c18851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Self-assembly of peptides on layered nanomaterials such as graphite and MoS2 in the formation of long-range ordered two-dimensional nanocrystal patterns leading to its potential applications for biosensing and bioelectronics has attracted significant interest in nanoscience and nanotechnology. However, controlling the self-assembly of peptides on nanomaterials is still challenging due to the unclear role of nanomaterials in steering self-assembly. Here, we used the in-situ AFM technique to capture different changes of peptide coverage as well as lengthening and widening rates depending on peptide concentrations, show the distinct boundary dynamics of two stabilized peptide domains, and resolve the molecular resolution structural differences and specific orientation of peptide on both nanomaterials. Moreover, ex-situ results showed that the nanomaterial layers tuned the opposite changes of nanowire heights and densities and displayed the different water-resistance stabilities on both nanomaterials. This work provides a basis for understanding nanomaterials steering peptide self-assembly and using hybrid bionanomaterials as a scaffold, enabling for potential biosensing and bioelectronics applications.
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Affiliation(s)
- Chen Chen
- Earth-Life Science Institute, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan
| | - Ayhan Yurtsever
- WPI Nano Life Science Institute (WPI-NanoLSI), Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
| | - Peiying Li
- RIKEN Center for Biosystems Dynamics Research, 1-7-22 Suehiro-cho, Tsurumi-ku, Yokohama 230-0045, Japan
| | - Linhao Sun
- WPI Nano Life Science Institute (WPI-NanoLSI), Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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34
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Fang N, Chang YR, Fujii S, Yamashita D, Maruyama M, Gao Y, Fong CF, Kozawa D, Otsuka K, Nagashio K, Okada S, Kato YK. Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures. Nat Commun 2024; 15:2871. [PMID: 38605019 PMCID: PMC11009238 DOI: 10.1038/s41467-024-47099-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 03/19/2024] [Indexed: 04/13/2024] Open
Abstract
The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical properties at low temperatures. Here we report on room-temperature observation of interface excitons in mixed-dimensional heterostructures consisting of two-dimensional tungsten diselenide and one-dimensional carbon nanotubes. Bright emission peaks originating from the interface are identified, spanning a broad energy range within the telecommunication wavelengths. The effect of band alignment is investigated by systematically varying the nanotube bandgap, and we assign the new peaks to interface excitons as they only appear in type-II heterostructures. Room-temperature localization of low-energy interface excitons is indicated by extended lifetimes as well as small excitation saturation powers, and photon correlation measurements confirm antibunching. With mixed-dimensional van der Waals heterostructures where band alignment can be engineered, new opportunities for quantum photonics are envisioned.
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Affiliation(s)
- N Fang
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan.
| | - Y R Chang
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan
| | - S Fujii
- Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama, Japan
- Department of Physics, Keio University, Yokohama, Japan
| | - D Yamashita
- Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama, Japan
- Platform Photonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan
| | - M Maruyama
- Department of Physics, University of Tsukuba, Ibaraki, Japan
| | - Y Gao
- Department of Physics, University of Tsukuba, Ibaraki, Japan
| | - C F Fong
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan
| | - D Kozawa
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan
- Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama, Japan
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki, Japan
| | - K Otsuka
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan
- Department of Mechanical Engineering, The University of Tokyo, Tokyo, Japan
| | - K Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo, Japan
| | - S Okada
- Department of Physics, University of Tsukuba, Ibaraki, Japan
| | - Y K Kato
- Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research, Saitama, Japan.
- Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama, Japan.
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35
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Sredenschek AJ, Sanchez DE, Wang J, Lei Y, Sinnott SB, Terrones M. Heterostructures coupling ultrathin metal carbides and chalcogenides. NATURE MATERIALS 2024; 23:460-469. [PMID: 38561520 DOI: 10.1038/s41563-024-01827-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Accepted: 01/22/2024] [Indexed: 04/04/2024]
Abstract
Non-layered transition metal carbides (TMCs) and layered transition metal dichalcogenides (TMDs) are two well-studied material families that have individually received considerable attention over the past century. In recent years, with the shift towards two-dimensional materials and heterostructures, a field has emerged that is focused on the structure and properties of TMC/TMD heterostructures, which through chemical conversion exhibit diverse types of heterostructure configuration that host coupled 2D-3D interfaces, giving rise to exotic properties. In this Review, we highlight experimental and computational efforts to understand the routes to fabricate TMC/TMD heterostructures. Furthermore, we showcase how controlling these heterostructures can lead to emergent electronic transport, optical properties and improved catalytic properties.
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Affiliation(s)
- Alexander J Sredenschek
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, PA, USA
| | - David Emanuel Sanchez
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, PA, USA
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Jiayang Wang
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, PA, USA
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Yu Lei
- Institute of Materials Research & Center of Double Helix & Guangdong Provincial Key Laboratory of Thermal Management Engineering and Materials, Tsinghua Shenzhen International Graduate School, Shenzhen, China
| | - Susan B Sinnott
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, PA, USA.
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
- Department of Chemistry, The Pennsylvania State University, University Park, PA, USA.
| | - Mauricio Terrones
- Department of Physics, The Pennsylvania State University, University Park, PA, USA.
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, PA, USA.
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
- Department of Chemistry, The Pennsylvania State University, University Park, PA, USA.
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36
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Radatović B, Çakıroğlu O, Jadriško V, Frisenda R, Senkić A, Vujičić N, Kralj M, Petrović M, Castellanos-Gomez A. Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:15596-15604. [PMID: 38500411 PMCID: PMC10982932 DOI: 10.1021/acsami.4c00458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Revised: 03/03/2024] [Accepted: 03/05/2024] [Indexed: 03/20/2024]
Abstract
In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.
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Affiliation(s)
- Borna Radatović
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
| | - Onur Çakıroğlu
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
| | - Valentino Jadriško
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
- Physics
Department, Politecnico di Milano, 20133 Milan, Italy
| | | | - Ana Senkić
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Nataša Vujičić
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Marko Kralj
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Marin Petrović
- Center
for Advanced Laser Techniques, Institute
of Physics, Bijenička 46, 10000 Zagreb, Croatia
| | - Andres Castellanos-Gomez
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain
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Chen X, Zhang Q, Peng J, Gao W, Yang M, Yu P, Yao J, Liang Y, Xiao Y, Zheng Z, Li J. Ideal Photodetector Based on WS 2/CuInP 2S 6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:13927-13937. [PMID: 38456299 DOI: 10.1021/acsami.3c16815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW photodetectors inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation for free and photoexcited carriers, thereby restricting their widespread applications. To address this challenge, we propose an efficient 2D WS2/CuInP2S6 vdW heterostructure photodetector by combining band engineering and ferroelectric modulation. In this device, the asymmetric conduction and valence band offsets effectively block the majority carriers (free electrons), while photoexcited holes are efficiently tunneled and rapidly collected by the bottom electrode. Additionally, the ferroelectric CuInP2S6 layer generates polarization states that reconfigure the built-in electric field, reducing dark current and facilitating the separation of photocarriers. Moreover, photoelectrons are trapped during long-distance lateral transport, resulting in a high photoconductivity gain. Consequently, the device achieves an impressive responsivity of 88 A W-1, an outstanding specific detectivity of 3.4 × 1013 Jones, and a fast response time of 37.6/371.3 μs. Moreover, the capability of high-resolution imaging under various wavelengths and fast optical communication has been successfully demonstrated using this device, highlighting its promising application prospects in future optoelectronic systems.
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Affiliation(s)
- Xiqiang Chen
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Qiyang Zhang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Junhao Peng
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, P. R. China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, P. R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Ying Liang
- The Basic Course Department, Guangzhou Maritime University, Guangzhou 510799, Guangdong, P. R. China
| | - Ye Xiao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, P. R. China
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38
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Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
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39
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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40
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Liu H, Zhang Z, Zhang C, Li X, Zhang C, Xu F, Wu Y, Wu Z, Kang J. Simultaneously Regulated Highly Polarized and Long-Lived Valley Excitons in WSe 2/GaN Heterostructures. NANO LETTERS 2024; 24:1851-1858. [PMID: 38315876 DOI: 10.1021/acs.nanolett.3c03494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Interlayer excitons, with prolonged lifetimes and tunability, hold potential for advanced optoelectronics. Previous research on the interlayer excitons has been dominated by two-dimensional heterostructures. Here, we construct WSe2/GaN composite heterostructures, in which the doping concentration of GaN and the twist angle of bilayer WSe2 are employed as two ingredients for the manipulation of exciton behaviors and polarizations. The exciton energies in monolayer WSe2/GaN can be regulated continuously by the doping levels of the GaN substrate, and a remarkable increase in the valley polarizations is achieved. Especially in a heterostructure with 4°-twisted bilayer WSe2, a maximum polarization of 38.9% with a long lifetime is achieved for the interlayer exciton. Theoretical calculations reveal that the large polarization and long lifetime are attributed to the high exciton binding energy and large spin flipping energy during depolarization in bilayer WSe2/GaN. This work introduces a distinctive member of the interlayer exciton with a high degree of polarization and a long lifetime.
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Affiliation(s)
- Haiyang Liu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
- School of Physical Science and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Zongnan Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Chenhao Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Xu Li
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Chunmiao Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Feiya Xu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Yaping Wu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Zhiming Wu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Junyong Kang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
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41
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Zhuo MP, Wei X, Li YY, Shi YL, He GP, Su H, Zhang KQ, Guan JP, Wang XD, Wu Y, Liao LS. Visualizing the interfacial-layer-based epitaxial growth process toward organic core-shell architectures. Nat Commun 2024; 15:1130. [PMID: 38326331 PMCID: PMC10850097 DOI: 10.1038/s41467-024-45262-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Accepted: 01/18/2024] [Indexed: 02/09/2024] Open
Abstract
Organic heterostructures (OHTs) with the desired geometry organization on micro/nanoscale have undergone rapid progress in nanoscience and nanotechnology. However, it is a significant challenge to elucidate the epitaxial-growth process for various OHTs composed of organic units with a lattice mismatching ratio of > 3%, which is unimaginable for inorganic heterostructures. Herein, we have demonstrated a vivid visualization of the morphology evolution of epitaxial-growth based on a doped interfacial-layer, which facilitates the comprehensive understanding of the hierarchical self-assembly of core-shell OHT with precise spatial configuration. Significantly, the barcoded OHT with periodic shells obviously illustrate the shell epitaxial-growth from tips to center parts along the seeded rods for forming the core-shell OHT. Furthermore, the diameter, length, and number of periodic shells were modulated by finely tuning the stoichiometric ratio, crystalline time, and temperature, respectively. This epitaxial-growth process could be generalized to organic systems with facile chemical/structural compatibility for forming the desired OHTs.
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Affiliation(s)
- Ming-Peng Zhuo
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
- Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Beijing, 100190, China
- China National Textile and Apparel Council Key Laboratory for Silk Functional Materials and Technology, National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Xiao Wei
- Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Beijing, 100190, China
| | - Yuan-Yuan Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
- China National Textile and Apparel Council Key Laboratory for Silk Functional Materials and Technology, National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Ying-Li Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Guang-Peng He
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Huixue Su
- Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Beijing, 100190, China
| | - Ke-Qin Zhang
- China National Textile and Apparel Council Key Laboratory for Silk Functional Materials and Technology, National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Jin-Ping Guan
- China National Textile and Apparel Council Key Laboratory for Silk Functional Materials and Technology, National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Xue-Dong Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China.
| | - Yuchen Wu
- Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Beijing, 100190, China.
| | - Liang-Sheng Liao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China.
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, 999078, Macau SAR, China.
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42
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Rudayni F, Rijal K, Fuller N, Chan WL. Enthalpy-uphill exciton dissociation in organic/2D heterostructures promotes free carrier generation. MATERIALS HORIZONS 2024; 11:813-821. [PMID: 38018228 DOI: 10.1039/d3mh01522j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Despite the large binding energy of charge transfer (CT) excitons in type-II organic/2D heterostructures, it has been demonstrated that free carriers can be generated from CT excitons with a long lifetime. Using a model fluorinated zine phthalocyanine (F8ZnPc)/monolayer-WS2 interface, we find that CT excitons can dissociate spontaneously into free carriers despite it being an enthalpy-uphill process. Specifically, it is observed that CT excitons can gain an energy of 250 meV in 50 ps and dissociate into free carriers without any applied electric field. This observation is surprising because excited electrons typically lose energy to the environment and relax to lower energy states. We hypothesize that this abnormal enthalpy-uphill CT exciton dissociation process is driven by entropy gain. Kinetically, the entropic driving force can also reduce the rate for the reverse process - the conversion of free electron-hole pairs back to CT excitons. Hence, this mechanism can potentially explain the very long carrier lifetime observed in organic/2D heterostructures.
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Affiliation(s)
- Fatimah Rudayni
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, US.
- Department of Physics, Jazan University, Jazan 45142, Saudi Arabia
| | - Kushal Rijal
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, US.
| | - Neno Fuller
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, US.
| | - Wai-Lun Chan
- Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, US.
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43
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Dechamps S, Nguyen VH, Charlier JC. Lateral junctions of transition metal dichalcogenides as ballistic channels for straintronic applications. NANOTECHNOLOGY 2024; 35:175201. [PMID: 38211329 DOI: 10.1088/1361-6528/ad1d78] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Accepted: 01/11/2024] [Indexed: 01/13/2024]
Abstract
In the context of advanced nanoelectronics, two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are gaining considerable interest due to their ultimate thinness, clean surface and high carrier mobility. The engineering prospects offered by those materials are further enlarged by the recent realization of atomically sharp TMD-based lateral junctions, whose electronic properties are governed by strain effects arising from the constituents lattice mismatch. Although most theoretical studies considered only misfit strain, first-principles simulations are employed here to investigate the transport properties under external deformation of a three-terminal device constructed from a MoS2/WSe2/MoS2junction. Large modulation of the current is reported owing to the change in band offset, illustrating the importance of strain on the p-n junction characteristics. The device operation is demonstrated for both local and global deformations, even for ultra-short channels, suggesting potential applications for ultra-thin body straintronics.
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Affiliation(s)
- Samuel Dechamps
- Université Grenoble Alpes, CEA, IRIG-MEM, 38000 Grenoble, France
| | - Viet-Hung Nguyen
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), Chemin des étoiles 8, B-1348 Louvain-la-Neuve, Belgium
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), Chemin des étoiles 8, B-1348 Louvain-la-Neuve, Belgium
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44
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Kim J, Rhee D, Jung M, Cheon GJ, Kim K, Kim JH, Park JY, Yoon J, Lim DU, Cho JH, Kim IS, Son D, Jariwala D, Kang J. Defect-Engineered Semiconducting van der Waals Thin Film at Metal-Semiconductor Interface of Field-Effect Transistors. ACS NANO 2024; 18:1073-1083. [PMID: 38100089 DOI: 10.1021/acsnano.3c10453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
The significance of metal-semiconductor interfaces and their impact on electronic device performance have gained increasing attention, with a particular focus on investigating the contact metal. However, another avenue of exploration involves substituting the contact metal at the metal-semiconductor interface of field-effect transistors with semiconducting layers to introduce additional functionalities to the devices. Here, a scalable approach for fabricating metal-oxide-semiconductor (channel)-semiconductor (interfacial layer) field-effect transistors is proposed by utilizing solution-processed semiconductors, specifically semiconducting single-walled carbon nanotubes and molybdenum disulfide, as the channel and interfacial semiconducting layers, respectively. The work function of the interfacial MoS2 is modulated by controlling the sulfur vacancy concentration through chemical treatment, which results in distinctive energy band alignments within a single device configuration. The resulting band alignments lead to multiple functionalities, including multivalued transistor characteristics and multibit nonvolatile memory (NVM) behavior. Moreover, leveraging the stable NVM properties, we demonstrate artificial synaptic devices with 88.9% accuracy of MNIST image recognition.
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Affiliation(s)
- Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dongjoon Rhee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Myeongjin Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Gang Jin Cheon
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Kangsan Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jae Hyung Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Ji Yun Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jiyong Yoon
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dong Un Lim
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - In Soo Kim
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Donghee Son
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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45
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Panasci SE, Deretzis I, Schilirò E, La Magna A, Roccaforte F, Koos A, Nemeth M, Pécz B, Cannas M, Agnello S, Giannazzo F. Interface Properties of MoS 2 van der Waals Heterojunctions with GaN. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:133. [PMID: 38251098 PMCID: PMC10818867 DOI: 10.3390/nano14020133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Revised: 12/27/2023] [Accepted: 01/03/2024] [Indexed: 01/23/2024]
Abstract
The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm-2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.
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Affiliation(s)
- Salvatore Ethan Panasci
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Ioannis Deretzis
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Emanuela Schilirò
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Antonino La Magna
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Fabrizio Roccaforte
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Antal Koos
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Miklos Nemeth
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Béla Pécz
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Marco Cannas
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy;
| | - Simonpietro Agnello
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy;
- ATEN Center, University of Palermo, Viale delle Scienze Ed. 18, 90128 Palermo, Italy
| | - Filippo Giannazzo
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
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46
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Huang YQ, Kang N. Electron-hole asymmetric magnetotransport of graphene-colloidal quantum dot device. J Colloid Interface Sci 2024; 653:749-755. [PMID: 37748402 DOI: 10.1016/j.jcis.2023.09.078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 07/29/2023] [Accepted: 09/11/2023] [Indexed: 09/27/2023]
Abstract
Interfacing graphene with other low-dimensional material has gained attentions recently due to its potential to stimulate new physics and device innovations for optoelectronic and electronic applications. Here, we exploit a solution-processed approach to introduce colloidal quantum dot (CQD) to the bilayer graphene device. The magnetotransport properties of the graphene device is drastically altered due to the presence of the CQD potential, leading to the observation of AB-like oscillation in the quantum Hall regime and screening of the intervalley scattering. The anomalous magnetotransport behavior is attributed to the coulombic scattering introduced by the CQDs and is shown to be highly asymmetric depending on the polarity of the transport carriers. These results prove the potential of such flexible method for engineering microscopic scattering process and performance of the graphene device that may lead to intriguing device application in such hybrid system.
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Affiliation(s)
- Y Q Huang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China; Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden
| | - N Kang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China.
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47
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Liao L, Kovalska E, Regner J, Song Q, Sofer Z. Two-Dimensional Van Der Waals Thin Film and Device. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2303638. [PMID: 37731156 DOI: 10.1002/smll.202303638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 08/07/2023] [Indexed: 09/22/2023]
Abstract
In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.
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Affiliation(s)
- Liping Liao
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
| | - Evgeniya Kovalska
- Faculty of Environment, Science and Economy, Department of Engineering, Exeter, EX4 4QF, UK
| | - Jakub Regner
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
| | - Qunliang Song
- School of Materials and Energy, Southwest University, Chongqing, 400715, P. R. China
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
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48
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Torres-Cavanillas R, Gavara-Edo M, Coronado E. Bistable Spin-Crossover Nanoparticles for Molecular Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307718. [PMID: 37725707 DOI: 10.1002/adma.202307718] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Revised: 08/25/2023] [Indexed: 09/21/2023]
Abstract
The field of spin-crossover complexes is rapidly evolving from the study of the spin transition phenomenon to its exploitation in molecular electronics. Such spin transition is gradual in a single-molecule, while in bulk it can be abrupt, showing sometimes thermal hysteresis and thus a memory effect. A convenient way to keep this bistability while reducing the size of the spin-crossover material is to process it as nanoparticles (NPs). Here, the most recent advances in the chemical design of these NPs and their integration into electronic devices, paying particular attention to optimizing the switching ratio are reviewed. Then, integrating spin-crossover NPs over 2D materials is focused to improve the endurance, performance, and detection of the spin state in these hybrid devices.
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Affiliation(s)
- Ramón Torres-Cavanillas
- Instituto de Ciencia Molecular, Universitat de València, Valencia, 46980, Spain
- Department of Materials, Oxford University, Oxford, OX2 6NN, UK
| | - Miguel Gavara-Edo
- Instituto de Ciencia Molecular, Universitat de València, Valencia, 46980, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular, Universitat de València, Valencia, 46980, Spain
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49
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Obaidulla SM, Supina A, Kamal S, Khan Y, Kralj M. van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device. NANOSCALE HORIZONS 2023; 9:44-92. [PMID: 37902087 DOI: 10.1039/d3nh00310h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.
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Affiliation(s)
- Sk Md Obaidulla
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Antonio Supina
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Chair of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Sherif Kamal
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| | - Yahya Khan
- Department of Physics, Karakoram International university (KIU), Gilgit 15100, Pakistan
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
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50
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Wu B, Zheng M, Zhuo MP, Zhao YD, Su Y, Fan JZ, Luo P, Gu LF, Che ZL, Wang ZS, Wang XD. Organic Bilayer Heterostructures with Built-In Exciton Conversion for 2D Photonic Encryption. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306541. [PMID: 37794632 DOI: 10.1002/adma.202306541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2023] [Revised: 09/21/2023] [Indexed: 10/06/2023]
Abstract
Organic multilayer heterostructures with accurate spatial organization demonstrate strong light-matter interaction from excitonic responses and efficient carrier transfer across heterojunction interfaces, which are considered as promising candidates toward advanced optoelectronics. However, the precise regulation of the heterojunction surface area for finely adjusting exciton conversion and energy transfer is still formidable. Herein, organic bilayer heterostructures (OBHs) with controlled face-to-face heterojunction via a stepwise seeded growth strategy, which is favorable for efficient exciton propagation and conversion of optical interconnects are designed and synthesized. Notably, the relative position and overlap length ratio of component microwires (LDSA /LBPEA = 0.39-1.15) in OBHs are accurately regulated by modulating the crystallization time of seeded crystals, resulting into a tailored heterojunction surface area (R = Loverlap /LBPEA = 37.6%-65.3%). These as-prepared OBHs present the excitation position-dependent waveguide behaviors for optical outcoupling characteristics with tunable emission colors and intensities, which are applied into two-dimensional (2D) photonic barcodes. This strategy opens a versatile avenue to purposely design OBHs with tailored heterojunctions for efficient energy transfer and exciton conversion, facilitating the application possibilities of advanced integrated optoelectronics.
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Affiliation(s)
- Bin Wu
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Min Zheng
- National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou, 215123, China
| | - Ming-Peng Zhuo
- National Engineering Laboratory for Modern Silk, College of Textile and Clothing Engineering, Soochow University, Suzhou, 215123, China
| | - Yu-Dong Zhao
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Yang Su
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Jian-Zhong Fan
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Peng Luo
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Lin-Feng Gu
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Zong-Lu Che
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Zuo-Shan Wang
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Xue-Dong Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
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