1
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Meng Q, Dong J, Nie P, Xu L, Wang J, Jiang S, Zuo H, Zhang J, Li X, Zhu Z, Balents L, Behnia K. Magnetostriction, piezomagnetism and domain nucleation in a Kagome antiferromagnet. Nat Commun 2024; 15:6921. [PMID: 39134541 PMCID: PMC11319493 DOI: 10.1038/s41467-024-51268-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Accepted: 08/02/2024] [Indexed: 08/15/2024] Open
Abstract
Whenever the elastic energy of a solid depends on magnetic field, there is a magnetostrictive response. Field-linear magnetostriction implies piezomagnetism and vice versa. Here, we show that Mn3Sn, a non-collinear antiferromanget with Weyl nodes, hosts a large and almost perfectly linear magnetostriction even at room temperature. The longitudinal and transverse magnetostriction, with opposite signs and similar amplitude are restricted to the kagome planes and the out-of-plane response is negligibly small. By studying four different samples with different Mn:Sn ratios, we find a clear correlation between the linear magnetostriction, the spontaneous magnetization and the concentration of Sn vacancies. The recently reported piezomagnetic data fits in our picture. We show that linear magnetostriction and piezomagnetism are both driven by the field-induced in-plane twist of spins. A quantitative account of the experimental data requires the distortion of the spin texture by Sn vacancies. We find that the field-induced domain nucleation within the hysteresis loop corresponds to a phase transition. Within the hysteresis loop, a concomitant mesoscopic modulation of local strain and spin twist angles, leading to twisto-magnetic stripes, arises as a result of the competition between elastic and magnetic energies.
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Affiliation(s)
- Qingkai Meng
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jianting Dong
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Pan Nie
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Liangcai Xu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jinhua Wang
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Shan Jiang
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
- Laboratoire de Physique et d'Etude de Matériaux (CNRS), ESPCI Paris, PSL Research University, 75005, Paris, France
| | - Huakun Zuo
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jia Zhang
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiaokang Li
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Zengwei Zhu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Leon Balents
- Kavli Institute for Theoretical Physics, University of California Santa Barbara, Santa Barbara, CA, 93106-4030, USA
- Canadian Institute for Advanced Research, Toronto, ON, Canada
| | - Kamran Behnia
- Laboratoire de Physique et d'Etude de Matériaux (CNRS), ESPCI Paris, PSL Research University, 75005, Paris, France.
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2
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Li Q, Mo SK, Edmonds MT. Recent progress of MnBi 2Te 4 epitaxial thin films as a platform for realising the quantum anomalous Hall effect. NANOSCALE 2024; 16:14247-14260. [PMID: 39015951 DOI: 10.1039/d4nr00194j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2024]
Abstract
Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic-doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi2Te4 has the potential to eliminate or significantly reduce magnetic disorder and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films at zero magnetic field, and what leads to the difficulty in quantisation is still an active research area. Although bulk MnBi2Te4 and exfoliated flakes have been well studied, revealing both the QAHE and axion insulator phases, experimental progress on MBE thin films has been slower. Understanding how the breakdown of the QAHE occurs in MnBi2Te4 thin films and finding solutions that will enable mass-produced millimetre-size QAHE devices operating at elevated temperatures are required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi2Te4 thin films and discuss mechanisms that could explain the failure of the QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising the QAHE at elevated temperatures in MnBi2Te4 thin films.
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Affiliation(s)
- Qile Li
- School of Physics and Astronomy, Monash University, Clayton, VIC, Australia.
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, VIC, Australia
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Mark T Edmonds
- School of Physics and Astronomy, Monash University, Clayton, VIC, Australia.
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, VIC, Australia
- ANFF-VIC Technology Fellow, Melbourne Centre for Nanofabrication, Victorian Node of the Australian National Fabrication Facility, Clayton, VIC 3168, Australia
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3
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Jia L, Chen Y, Yang G, Lv W, Zhang C, Zhou L, Han X, Zhang Q, Yang H, Lei H, Zhang Y, Gao HJ, Wang Y. Nanoscale Visualization of Symmetry-Breaking Electronic Orders and Magnetic Anisotropy in a Kagome Magnet YMn 6Sn 6. NANO LETTERS 2024; 24:8843-8850. [PMID: 39007508 DOI: 10.1021/acs.nanolett.4c01368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/16/2024]
Abstract
A kagome lattice hosts a plethora of quantum states arising from the interplay between nontrivial topology and electron correlations. The recently discovered kagome magnet RMn6Sn6 (R represents a rare-earth element) is believed to showcase a kagome band closely resembling textbook characteristics. Here, we report the characterization of local electronic states and their magnetization response in YMn6Sn6 via scanning tunneling microscopy measurements under vector magnetic fields. Our spectroscopic maps reveal a spontaneously trimerized kagome electronic order in YMn6Sn6, where the 6-fold rotational symmetry is disrupted while translational symmetry is maintained. Further application of an external magnetic field demonstrates a strong coupling of the YMn6Sn6 kagome band to the field, which exhibits an energy shift discrepancy under different field directions, implying the existence of magnetization-response anisotropy and anomalous g factors. Our findings establish YMn6Sn6 as an ideal platform for investigating kagome-derived orbital magnetic moment and correlated magnetic topological states.
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Affiliation(s)
- Liangguang Jia
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Guoyuan Yang
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China
| | - Wenxin Lv
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Can Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Lili Zhou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Xu Han
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Huixia Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Hechang Lei
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy, Beijing Institute of Technology, Jiaxing, Zhejiang 314000, China
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4
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Xu C, Wang J, Luo X, Lu X. Tunable hybrid-order Weyl semimetal via staggered magnetic flux. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:395501. [PMID: 38906130 DOI: 10.1088/1361-648x/ad5ad1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2024] [Accepted: 06/21/2024] [Indexed: 06/23/2024]
Abstract
We investigate a hybrid-order Weyl semimetal (HOWS) constructed by stacking the two-dimensional kagome lattice with staggered magnetic flux. By adjusting the magnitude of flux, higher-order topological phases are tunably intertwined with the first-order topological Chern insulators, which is governed by the evolution of Weyl points. Meanwhile the surface Fermi arcs undergo topological Lifshitz transition. Notably, due to the breaking of time-reversal symmetry (TRS), a novel split of a quadratic double Weyl point occurs, giving rise to additional three type-II Weyl points hybridizing with one type-I node. This phenomenon plays a crucial role in realizing high-Chern-number phases withC=±2and reveals a new mechanism for the emergence of type-II Weyl fermions in topological kagome semimetals. We anticipate that this study will stimulate further investigation into the unique physics of kagome materials and Weyl semimetals.
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Affiliation(s)
- Chuanshu Xu
- Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China
| | - Jiyu Wang
- Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China
| | - Xi Luo
- College of Science, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
| | - Xiancong Lu
- Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China
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5
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Asakura M, Higo T, Matsuo T, Uesugi R, Nishio-Hamane D, Nakatsuji S. Observation of Omnidirectional Exchange Bias at All-Antiferromagnetic Polycrystalline Heterointerface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400301. [PMID: 38531113 DOI: 10.1002/adma.202400301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2024] [Revised: 03/13/2024] [Indexed: 03/28/2024]
Abstract
Due to promising functionalities that may dramatically enhance spintronics performance, antiferromagnets are the subject of intensive research for developing the next-generation active elements to replace ferromagnets. In particular, the recent experimental demonstration of tunneling magnetoresistance and electrical switching using chiral antiferromagnets has sparked expectations for the practical integration of antiferromagnetic materials into device architectures. To further develop the technology to manipulate the magnetic anisotropies in all-antiferromagnetic devices, it is essential to realize exchange bias through the interface between antiferromagnetic multilayers. Here, the first observation on the omnidirectional exchange bias at an all-antiferromagnetic polycrystalline heterointerface is reported. This experiment demonstrates that the interfacial energy causing the exchange bias between the chiral-antiferromagnet Mn3Sn/collinear-antiferromagnet MnN layers is comparable to those found at the conventional ferromagnet/antiferromagnet interface at room temperature. In sharp contrast with previous reports using ferromagnets, the magnetic field control of the unidirectional anisotropy is found to be omnidirectional due to the absence of the shape anisotropy in the antiferromagnetic multilayer. The realization of the omnidirectional exchange bias at the interface between polycrystalline antiferromagnets on amorphous templates, highly compatible with existing Si-based devices, paves the way for developing ultra-low power and ultra-high speed memory devices based on antiferromagnets.
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Affiliation(s)
- Mihiro Asakura
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
| | - Tomoya Higo
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
- CREST, Japan Science and Technology Agency, Kawaguchi, Saitama, 332-0012, Japan
| | - Takumi Matsuo
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
- Institute for Quantum Matter and Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD, 21218, USA
| | - Ryota Uesugi
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
| | - Daisuke Nishio-Hamane
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
| | - Satoru Nakatsuji
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
- CREST, Japan Science and Technology Agency, Kawaguchi, Saitama, 332-0012, Japan
- Institute for Quantum Matter and Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD, 21218, USA
- Trans-scale Quantum Science Institute, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
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6
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Zhu M, Li Q, Guo K, Chen B, He K, Yi C, Lu P, Li X, Lu J, Li J, Wu R, Liu X, Liu Y, Liao L, Li B, Duan X. Two-Dimensional Ultrathin Fe 3Sn 2 Kagome Metal with Defect-Dependent Magnetic Property. NANO LETTERS 2024. [PMID: 38842926 DOI: 10.1021/acs.nanolett.4c01765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Two-dimensional (2D) Fe3Sn2, which is a room-temperature ferromagnetic kagome metal, has potential applications in spintronic devices. However, the systematic synthesis and magnetic study of 2D Fe3Sn2 single crystals have rarely been reported. Here we have synthesized 2D hexagonal and triangular Fe3Sn2 nanosheets by controlling the amount of FeCl2 precursors in the chemical vapor deposition (CVD) method. It is found that the hexagonal Fe3Sn2 nanosheets exist with Fe vacancy defects and show no obvious coercivity. While the triangular Fe3Sn2 nanosheet has obvious hysteresis loops at room temperature, its coercivity first increases and then remains stable with an increase in temperature, which should result from the competition of the thermal activation mechanism and spin direction rotation mechanism. A first-principles calculation study shows that the Fe vacancy defects in Fe3Sn2 can increase the distances between Fe atoms and weaken the ferromagnetism of Fe3Sn2. The resulting 2D Fe3Sn2 nanosheets provide a new choice for spintronic devices.
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Affiliation(s)
- Manli Zhu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Qiuqiu Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Kaiwen Guo
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Bailian Chen
- School of Design, Hunan University, Changsha 410082, People's Republic of China
| | - Kun He
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Chen Yi
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Ping Lu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Xingyun Li
- DongGuan Institute of GuangDong Institute of Metrology, Dongguan 523343, People's Republic of China
| | - Jiwu Lu
- School of Design, Hunan University, Changsha 410082, People's Republic of China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ruixia Wu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Xingqiang Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Lei Liao
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
| | - Bo Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, People's Republic of China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, People's Republic of China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
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7
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Lee SH, Qian Y, Yang BJ. Fermi Surface Spin Texture and Topological Superconductivity in Spin-Orbit Free Noncollinear Antiferromagnets. PHYSICAL REVIEW LETTERS 2024; 132:196602. [PMID: 38804945 DOI: 10.1103/physrevlett.132.196602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Accepted: 04/15/2024] [Indexed: 05/29/2024]
Abstract
We explore the relationship among the magnetic ordering in real space, the resulting spin texture on the Fermi surface, and the related superconducting gap structure in noncollinear antiferromagnetic metals without spin-orbit coupling. Via a perturbative approach, we show that noncollinear magnetic ordering in a metal can generate momentum-dependent spin texture on its Fermi surface, even in the absence of spin-orbit coupling, if the metal has more than three sublattices in its magnetic unit cell. Thus, our theory naturally extends the idea of altermagnetism to noncollinear spin structures. When superconductivity is developed in a magnetic metal, as the gap-opening condition is strongly constrained by the spin texture, the nodal structure of the superconducting state is also enforced by the magnetism-induced spin texture. Taking the noncollinear antiferromagnet on the kagome lattice as a representative example, we demonstrate how the Fermi surface spin texture induced by noncollinear antiferromagnetism naturally leads to odd-parity spin-triplet superconductivity with nontrivial topological properties.
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Affiliation(s)
- Seung Hun Lee
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Theoretical Physics (CTP), Seoul National University, Seoul 08826, Korea; and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Yuting Qian
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Theoretical Physics (CTP), Seoul National University, Seoul 08826, Korea; and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Bohm-Jung Yang
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Theoretical Physics (CTP), Seoul National University, Seoul 08826, Korea; and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
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8
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Xu S, Dai B, Jiang Y, Xiong D, Cheng H, Tai L, Tang M, Sun Y, He Y, Yang B, Peng Y, Wang KL, Zhao W. Universal scaling law for chiral antiferromagnetism. Nat Commun 2024; 15:3717. [PMID: 38697983 PMCID: PMC11066068 DOI: 10.1038/s41467-024-46325-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Accepted: 02/22/2024] [Indexed: 05/05/2024] Open
Abstract
The chiral antiferromagnetic (AFM) materials, which have been widely investigated due to their rich physics, such as non-zero Berry phase and topology, provide a platform for the development of antiferromagnetic spintronics. Here, we find two distinctive anomalous Hall effect (AHE) contributions in the chiral AFM Mn3Pt, originating from a time-reversal symmetry breaking induced intrinsic mechanism and a skew scattering induced topological AHE due to an out-of-plane spin canting with respect to the Kagome plane. We propose a universal AHE scaling law to explain the AHE resistivity (ρ A H ) in this chiral magnet, with both a scalar spin chirality (SSC)-induced skew scattering topological AHE term,a s k and non-collinear spin-texture induced intrinsic anomalous Hall term,b i n . We found thata s k andb i n can be effectively modulated by the interfacial electron scattering, exhibiting a linear relation with the inverse film thickness. Moreover, the scaling law can explain the anomalous Hall effect in various chiral magnets and has far-reaching implications for chiral-based spintronics devices.
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Affiliation(s)
- Shijie Xu
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
- Hefei Innovation Research Institute, Beihang University, Hefei, China
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Yuhao Jiang
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Danrong Xiong
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Houyi Cheng
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
- Hefei Innovation Research Institute, Beihang University, Hefei, China
| | - Lixuan Tai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Meng Tang
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Yadong Sun
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Yu He
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Baolin Yang
- School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, P. R. China
| | - Yong Peng
- School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou, 730000, P. R. China
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Weisheng Zhao
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China.
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
- Hefei Innovation Research Institute, Beihang University, Hefei, China.
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9
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Chen H, Liu L, Zhou X, Meng Z, Wang X, Duan Z, Zhao G, Yan H, Qin P, Liu Z. Emerging Antiferromagnets for Spintronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310379. [PMID: 38183310 DOI: 10.1002/adma.202310379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Revised: 12/18/2023] [Indexed: 01/08/2024]
Abstract
Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.
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Affiliation(s)
- Hongyu Chen
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Li Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaorong Zhou
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Ziang Meng
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaoning Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiyuan Duan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Guojian Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Han Yan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Peixin Qin
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiqi Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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10
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Ghosh S, Low A, Changdar S, Purwar S, Thirupathaiah S. Unusual multiple magnetic transitions and anomalous Hall effect observed in antiferromagnetic Weyl semimetal, Mn 2.94Ge (Ge-rich). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:215705. [PMID: 38364271 DOI: 10.1088/1361-648x/ad2a0b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Accepted: 02/16/2024] [Indexed: 02/18/2024]
Abstract
We report on the magnetic and Hall effect measurements of the magnetic Weyl semimetal, Mn2.94Ge (Ge-rich) single crystal. From the magnetic properties study, we identify unusual multiple magnetic transitions below the Ne'el temperature of 353 K, such as the spin-reorientation (TSR) and ferromagnetic-like transitions. Consistent with the magnetic properties, the Hall effect study shows unusual behavior around the spin-reorientation transition. Specifically, the anomalous Hall conductivity increases with increasing temperature, reaching a maximum atTSR, which then gradually decreases with increasing temperature. This observation is quite in contrast to the Mn3+δGe (Mn-rich) system, though both compositions share the same hexagonal crystal symmetry. This study unravels the sensitivity of magnetic and topological properties on the Mn concentration.
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Affiliation(s)
- Susanta Ghosh
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Kolkata, West Bengal 700106, India
| | - Achintya Low
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Kolkata, West Bengal 700106, India
| | - Susmita Changdar
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Kolkata, West Bengal 700106, India
| | - Shubham Purwar
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Kolkata, West Bengal 700106, India
| | - Setti Thirupathaiah
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Kolkata, West Bengal 700106, India
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11
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Liu X, Zhang D, Deng Y, Jiang N, Zhang E, Shen C, Chang K, Wang K. Tunable Spin Textures in a Kagome Antiferromagnetic Semimetal via Symmetry Design. ACS NANO 2024; 18:1013-1021. [PMID: 38147457 DOI: 10.1021/acsnano.3c10187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Kagome antiferromagnetic semimetals such as Mn3Sn have attracted extensive attention for their potential application in antiferromagnetic spintronics. Realizing high manipulation of kagome antiferromagnetic spin states at room temperature can reveal rich emergent phenomena resulting from the quantum interactions between topology, spin, and correlation. Here, we achieved tunable spin textures of Mn3Sn through symmetry design by controlling alternate Mn3Sn and heavy-metal Pt thicknesses. The various topological spin textures were predicted with theoretical simulations, and the skyrmion-induced topological Hall effect, strong spin-dependent scattering, and vertical gradient of spin states were obtained by magnetotransport and magnetic circular dichroism (MCD) spectroscopy measurements in Mn3Sn/Pt heterostructures. Our work provides an effective strategy for the innovative design of topological antiferromagnetic spintronic devices.
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Affiliation(s)
- Xionghua Liu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dong Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongcheng Deng
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Nai Jiang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Enze Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chao Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kai Chang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Science, Beijing 100049, China
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12
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Skaggs CM, Ryu DC, Bhandari H, Xin Y, Kang CJ, Lapidus SH, Siegfried PE, Ghimire NJ, Tan X. IrGe 4: A Predicted Weyl-Metal with a Chiral Crystal Structure. Inorg Chem 2023; 62:19395-19403. [PMID: 37983308 DOI: 10.1021/acs.inorgchem.3c01528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
Polycrystalline IrGe4 was synthesized by annealing elements at 800 °C for 240 h, and the composition was confirmed by energy-dispersive X-ray spectroscopy. IrGe4 adopts a chiral crystal structure (space group P3121) instead of a polar crystal structure (P31), which was corroborated by the convergent-beam electron diffraction and Rietveld refinements using synchrotron powder X-ray diffraction data. The crystal structure features layers of IrGe8 polyhedra along the b axis, and the layers are connected by edge- and corner-sharing. Each layer consists of corner-shared [Ir3Ge20] trimers, which are formed by three IrGe8 polyhedra connected by edge-sharing. Temperature-dependent resistivity indicates metallic behavior. The magnetoresistance increases with increasing applied magnetic field, and the nonsaturating magnetoresistance reaches 11.5% at 9 T and 10 K. The Hall resistivity suggests that holes are the majority carrier type, with a carrier concentration of 4.02 × 1021 cm-3 at 300 K. Electronic band structures calculated by density functional theory reveal a Weyl point with a chiral charge of +3 above the Fermi level.
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Affiliation(s)
- Callista M Skaggs
- Department of Chemistry and Biochemistry, George Mason University, Fairfax, Virginia 22030, United States
| | - Dong-Choon Ryu
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
- Institute of Quantum Systems, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Hari Bhandari
- Department of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States
- Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, United States
| | - Yan Xin
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
| | - Chang-Jong Kang
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
- Institute of Quantum Systems, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Saul H Lapidus
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Peter E Siegfried
- Department of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States
- Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, United States
| | - Nirmal J Ghimire
- Department of Physics and Astronomy and Stavropoulos Center for Complex Quantum Matter, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Xiaoyan Tan
- Department of Chemistry and Biochemistry, George Mason University, Fairfax, Virginia 22030, United States
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13
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Wang R, Zhang J, Li T, Chen K, Li Z, Wu M, Ling L, Xi C, Hong K, Miao L, Yuan S, Chen T, Wang J. SdH Oscillations from the Dirac Surface State in the Fermi-Arc Antiferromagnet NdBi. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303978. [PMID: 37877606 PMCID: PMC10724392 DOI: 10.1002/advs.202303978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Revised: 08/31/2023] [Indexed: 10/26/2023]
Abstract
The recent progress in CuMnAs and Mn3X (X = Sn, Ge, Pt) shows that antiferromagnets (AFMs) provide a promising platform for advanced spintronics device innovations. Most recently, a switchable Fermi-arc is discovered by the ARPES technique in antiferromagnet NdBi, but the knowledge about electron-transport property and the manipulability of the magnetic structure in NdBi is still vacant to date. In this study, SdH oscillations are successfully verified from the Dirac surface states (SSs) with 2-dimensionality and nonzero Berry phase. Particularly, it is observed that the spin-flop transition only appears when the external magnetical field is applied along [001] direction, and features obvious hysteresis for the first time in NdBi, which provides a powerful handle for adjusting the spin texture in NdBi. Crucially, the DFT shows the Dirac cone and the Fermi arc strongly depend on the high-order magnetic structure of NdBi and further reveals the orbital magnetic moment of Nd plays a crucial role in fostering the peculiar SSs, leading to unveil the mystery of the band-splitting effect and to manipulate the electronic transport, high-effectively, in the thin film works in NdBi. It is believed that this study provides important guidance for the development of new antiferromagnet-based spintronics devices based on cutting-edge rare-earth monopnictides.
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Affiliation(s)
- Ruoqi Wang
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
| | - Junchao Zhang
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
| | - Tian Li
- High Magnetic Field LaboratoryChinese Academy of SciencesHefei230031China
| | - Keming Chen
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
| | - Zhengyu Li
- High Magnetic Field LaboratoryChinese Academy of SciencesHefei230031China
| | - Mingliang Wu
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
| | - Langsheng Ling
- High Magnetic Field LaboratoryChinese Academy of SciencesHefei230031China
| | - Chuanying Xi
- High Magnetic Field LaboratoryChinese Academy of SciencesHefei230031China
| | - Kunquan Hong
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
| | - Lin Miao
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
| | - Shijun Yuan
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
| | - Taishi Chen
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
| | - Jinlan Wang
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
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14
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Lund MA, Rodrigues DR, Everschor-Sitte K, Hals KMD. Voltage-Controlled High-Bandwidth Terahertz Oscillators Based on Antiferromagnets. PHYSICAL REVIEW LETTERS 2023; 131:156704. [PMID: 37897757 DOI: 10.1103/physrevlett.131.156704] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2022] [Revised: 06/14/2023] [Accepted: 09/11/2023] [Indexed: 10/30/2023]
Abstract
Producing compact voltage-controlled frequency generators and sensors operating in the terahertz (THz) regime represents a major technological challenge. Here, we show that noncollinear antiferromagnets (NCAFMs) with kagome structure host gapless self-oscillations whose frequencies are tunable from 0 Hz to the THz regime via electrically induced spin-orbit torques (SOTs). The auto-oscillations' initiation, bandwidth, and amplitude are investigated by deriving an effective theory, which captures the reactive and dissipative SOTs. We find that the dynamics strongly depends on the ground state's chirality, with one chirality having gapped excitations, whereas the opposite chirality provides gapless self-oscillations. Our results reveal that NCAFMs offer unique THz functional components, which could play a significant role in filling the THz technology gap.
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Affiliation(s)
- Mike A Lund
- Department of Engineering Sciences, University of Agder, 4879 Grimstad, Norway
| | - Davi R Rodrigues
- Department of Electrical and Information Engineering, Polytechnic University of Bari, 70125 Bari, Italy
| | - Karin Everschor-Sitte
- Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
| | - Kjetil M D Hals
- Department of Engineering Sciences, University of Agder, 4879 Grimstad, Norway
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15
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Marchenkov VV, Irkhin VY. Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn 2YAl and Mn 3Z ( Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt). MATERIALS (BASEL, SWITZERLAND) 2023; 16:6351. [PMID: 37834488 PMCID: PMC10573737 DOI: 10.3390/ma16196351] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/08/2023] [Accepted: 09/19/2023] [Indexed: 10/15/2023]
Abstract
We present a brief review of experimental and theoretical papers on studies of electron transport and magnetic properties in manganese-based compounds Mn2YZ and Mn3Z (Y = V, Cr, Fe, Co, Ni, etc.; Z = Al, Ge, Sn, Si, Pt, etc.). It has been shown that in the electronic subsystem of Mn2YZ compounds, the states of a half-metallic ferromagnet and a spin gapless semiconductor can arise with the realization of various magnetic states, such as a ferromagnet, a compensated ferrimagnet, and a frustrated antiferromagnet. Binary compounds of Mn3Z have the properties of a half-metallic ferromagnet and a topological semimetal with a large anomalous Hall effect, spin Hall effect, spin Nernst effect, and thermal Hall effect. Their magnetic states are also very diverse: from a ferrimagnet and an antiferromagnet to a compensated ferrimagnet and a frustrated antiferromagnet, as well as an antiferromagnet with a kagome-type lattice. It has been demonstrated that the electronic and magnetic properties of such materials are very sensitive to external influences (temperature, magnetic field, external pressure), as well as the processing method (cast, rapidly quenched, nanostructured, etc.). Knowledge of the regularities in the behavior of the electronic and magnetic characteristics of Mn2YAl and Mn3Z compounds can be used for applications in micro- and nanoelectronics and spintronics.
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Affiliation(s)
- Vyacheslav V. Marchenkov
- Mikheev Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia;
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16
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Cao C, Chen S, Xiao RC, Zhu Z, Yu G, Wang Y, Qiu X, Liu L, Zhao T, Shao DF, Xu Y, Chen J, Zhan Q. Anomalous spin current anisotropy in a noncollinear antiferromagnet. Nat Commun 2023; 14:5873. [PMID: 37735469 PMCID: PMC10514083 DOI: 10.1038/s41467-023-41568-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Accepted: 09/09/2023] [Indexed: 09/23/2023] Open
Abstract
Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn3Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined time reversal-odd ([Formula: see text]-odd) and time reversal-even ([Formula: see text]-even) spin Hall effects. Based on symmetry analyses and experimental characterizations of the current-induced spin torques in Mn3Pt-based heterostructures, we find that the spin current generated by Mn3Pt (001) exhibits exotic dependences on the current direction for all the spin components, deviating from that in conventional cubic systems. We also demonstrate that such an anisotropic spin current can be used to realize low-power spintronic applications such as the efficient field-free switching of the perpendicular magnetizations.
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Affiliation(s)
- Cuimei Cao
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Shiwei Chen
- School of Physics, Hubei University, Wuhan, 430062, People's Republic of China
- Shanghai Key Laboratory of Special Artificial Microstructure Materials, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, People's Republic of China
| | - Rui-Chun Xiao
- Institute of Physical Science and Information Technology, Anhui University, Hefei, 230601, People's Republic of China
| | - Zengtai Zhu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, People's Republic of China
- Beijing National Laboratory for Condensed Matter, Physics Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Guoqiang Yu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, People's Republic of China
- Beijing National Laboratory for Condensed Matter, Physics Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Yangping Wang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Xuepeng Qiu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, People's Republic of China
| | - Liang Liu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Ding-Fu Shao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China.
| | - Yang Xu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China.
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
| | - Qingfeng Zhan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China.
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17
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Huang L, Kong X, Zheng Q, Xing Y, Chen H, Li Y, Hu Z, Zhu S, Qiao J, Zhang YY, Cheng H, Cheng Z, Qiu X, Liu E, Lei H, Lin X, Wang Z, Yang H, Ji W, Gao HJ. Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization in Co 3Sn 2S 2. Nat Commun 2023; 14:5230. [PMID: 37634043 PMCID: PMC10460379 DOI: 10.1038/s41467-023-40942-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2023] [Accepted: 08/15/2023] [Indexed: 08/28/2023] Open
Abstract
Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co3Sn2S2, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques.
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Affiliation(s)
- Li Huang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Xianghua Kong
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872, Beijing, China
- Centre for the Physics of Materials and Department of Physics, McGill University, Montreal, QC, H3A 2T8, Canada
| | - Qi Zheng
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Yuqing Xing
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Hui Chen
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Yan Li
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Zhixin Hu
- Center for Joint Quantum Studies and Department of Physics, Institute of Science, Tianjin University, 300350, Tianjin, China
| | - Shiyu Zhu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Jingsi Qiao
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872, Beijing, China
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China
| | - Yu-Yang Zhang
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Haixia Cheng
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872, Beijing, China
| | - Zhihai Cheng
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872, Beijing, China
| | - Xianggang Qiu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Enke Liu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Hechang Lei
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872, Beijing, China
| | - Xiao Lin
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Ziqiang Wang
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Haitao Yang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872, Beijing, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, 100872, Beijing, China.
| | - Hong-Jun Gao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
- Hefei National Laboratory, 230088, Hefei, Anhui, China.
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18
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Sun W, Li B, Zou X, Li R, Huang B, Dai Y, Niu C. Magnetic Weyl Semimetal in BaCrSe 2 with Long-Distance Distribution of Weyl Points. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2301474. [PMID: 37246266 PMCID: PMC10401091 DOI: 10.1002/advs.202301474] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Revised: 04/24/2023] [Indexed: 05/30/2023]
Abstract
Weyl semimetals (WSMs) have attracted great attentions that provide intriguing platforms for exploring fundamental physical phenomena and future topotronics applications. Despite the fact that numerous WSMs are achieved, WSMs with long-distance distribution of Weyl points (WPs) in given material candidates remain elusive. Here, the emergence of intrinsic ferromagnetic WSMs in BaCrSe2 with the nontrivial nature explicitly confirmed by the Chern number and Fermi arc surface states analysis is theoretically demonstrated. Remarkably, unlike previous WSMs for which opposite chirality WPs are located very close to each other, the WPs of BaCrSe2 host a long-distance distribution, as much as half of the reciprocal space vector, suggesting that the WPs are highly robust and difficult to be annihilated by perturbations. The presented results not only advance the general understanding of magnetic WSMs but also put forward potential applications in topotronics.
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Affiliation(s)
- Wenli Sun
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Bingyang Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Xiaorong Zou
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Runhan Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Chengwang Niu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
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19
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Tanaka H, Telegin AV, Sukhorukov YP, Golyashov VA, Tereshchenko OE, Lavrov AN, Matsuda T, Matsunaga R, Akashi R, Lippmaa M, Arai Y, Ideta S, Tanaka K, Kondo T, Kuroda K. Semiconducting Electronic Structure of the Ferromagnetic Spinel HgCr_{2}Se_{4} Revealed by Soft-X-Ray Angle-Resolved Photoemission Spectroscopy. PHYSICAL REVIEW LETTERS 2023; 130:186402. [PMID: 37204880 DOI: 10.1103/physrevlett.130.186402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Revised: 02/08/2023] [Accepted: 03/22/2023] [Indexed: 05/21/2023]
Abstract
We study the electronic structure of the ferromagnetic spinel HgCr_{2}Se_{4} by soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) and first-principles calculations. While a theoretical study has predicted that this material is a magnetic Weyl semimetal, SX-ARPES measurements give direct evidence for a semiconducting state in the ferromagnetic phase. Band calculations based on the density functional theory with hybrid functionals reproduce the experimentally determined band gap value, and the calculated band dispersion matches well with ARPES experiments. We conclude that the theoretical prediction of a Weyl semimetal state in HgCr_{2}Se_{4} underestimates the band gap, and this material is a ferromagnetic semiconductor.
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Affiliation(s)
- Hiroaki Tanaka
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | | | | | - Vladimir A Golyashov
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
- Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
| | - Oleg E Tereshchenko
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
- Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
| | - Alexander N Lavrov
- Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk 630090, Russia
| | - Takuya Matsuda
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Ryusuke Matsunaga
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Ryosuke Akashi
- Quantum Materials and Applications Research Center, National Institutes for Quantum Science and Technology, Meguro-ku, Tokyo 152-0033, Japan
| | - Mikk Lippmaa
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Yosuke Arai
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Shinichiro Ideta
- UVSOR Facility, Institute for Molecular Science, Okazaki, Aichi 444-8585, Japan
| | - Kiyohisa Tanaka
- UVSOR Facility, Institute for Molecular Science, Okazaki, Aichi 444-8585, Japan
| | - Takeshi Kondo
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
- Trans-scale Quantum Science Institute, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - Kenta Kuroda
- Graduate School of Advanced Science and Engineering, Hiroshima University, Higashi-hiroshima, Hiroshima 739-8526, Japan
- International Institute for Sustainability with Knotted Chiral Meta Matter (WPI-SKCM2), Hiroshima University, Higashi-hiroshima, Hiroshima 739-8526, Japan
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20
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Li Z, Yin Q, Jiang Y, Zhu Z, Gao Y, Wang S, Shen J, Zhao T, Cai J, Lei H, Lin SZ, Zhang Y, Shen B. Discovery of Topological Magnetic Textures near Room Temperature in Quantum Magnet TbMn 6 Sn 6. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211164. [PMID: 36856016 DOI: 10.1002/adma.202211164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 02/19/2023] [Indexed: 05/19/2023]
Abstract
The study of topology in quantum materials has fundamentally advanced the understanding in condensed matter physics and potential applications in next-generation quantum information technology. Recently, the discovery of a topological Chern phase in the spin-orbit-coupled Kagome lattice TbMn6 Sn6 has attracted considerable interest. Whereas these phenomena highlight the contribution of momentum space Berry curvature and Chern gap on the electronic transport properties, less is known about the intrinsic real space magnetic texture, which is crucial for understanding the electronic properties and further exploring the unique quantum behavior. Here, the stabilization of topological magnetic skyrmions in TbMn6 Sn6 using Lorentz transmission electron microscopy near room temperature, where the spins experience full spin reorientation transition between the a- and c-axes, is directly observed. An effective spin Hamiltonian based on the Ginzburg-Landau theory is constructed and micromagnetic simulation is performed to clarify the critical role of Ruderman-Kittel-Kasuya-Yosida interaction on the stabilization of skyrmion lattice. These results not only uncover nontrivial spin topological texture in TbMn6 Sn6 , but also provide a solid basis to study its interplay with electronic topology.
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Affiliation(s)
- Zhuolin Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China
| | - Qiangwei Yin
- Laboratory for Neutron Scattering, Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Yi Jiang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China
| | - ZhaoZhao Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Yang Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Shouguo Wang
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Jun Shen
- Department of Energy and Power Engineering, School of Mechanical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Tongyun Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China
| | - Jianwang Cai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China
| | - Hechang Lei
- Laboratory for Neutron Scattering, Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Shi-Zeng Lin
- Theoretical Division and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Ying Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
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21
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Matsuda T, Higo T, Koretsune T, Kanda N, Hirai Y, Peng H, Matsuo T, Yoshikawa N, Shimano R, Nakatsuji S, Matsunaga R. Ultrafast Dynamics of Intrinsic Anomalous Hall Effect in the Topological Antiferromagnet Mn_{3}Sn. PHYSICAL REVIEW LETTERS 2023; 130:126302. [PMID: 37027855 DOI: 10.1103/physrevlett.130.126302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Accepted: 02/06/2023] [Indexed: 06/19/2023]
Abstract
We investigate ultrafast dynamics of the anomalous Hall effect (AHE) in the topological antiferromagnet Mn_{3}Sn with sub-100 fs time resolution. Optical pulse excitations largely elevate the electron temperature up to 700 K, and terahertz probe pulses clearly resolve ultrafast suppression of the AHE before demagnetization. The result is well reproduced by microscopic calculation of the intrinsic Berry-curvature mechanism while the extrinsic contribution is clearly excluded. Our work opens a new avenue for the study of nonequilibrium AHE to identify the microscopic origin by drastic control of the electron temperature by light.
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Affiliation(s)
- Takuya Matsuda
- The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Tomoya Higo
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
| | | | - Natsuki Kanda
- The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Yoshua Hirai
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
| | - Hanyi Peng
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
| | - Takumi Matsuo
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
| | - Naotaka Yoshikawa
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
| | - Ryo Shimano
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
- Cryogenic Research Center, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0032, Japan
| | - Satoru Nakatsuji
- The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
- Trans-scale Quantum Science Institute, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
- Institute for Quantum Matter and Department of Physics and Astronomy, Johns Hopkins University, Baltimore, 21218 Maryland, USA
| | - Ryusuke Matsunaga
- The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
- Trans-scale Quantum Science Institute, The University of Tokyo, Bunkyo-ku, Tokyo, 113-0033, Japan
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22
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Li X, Koo J, Zhu Z, Behnia K, Yan B. Field-linear anomalous Hall effect and Berry curvature induced by spin chirality in the kagome antiferromagnet Mn 3Sn. Nat Commun 2023; 14:1642. [PMID: 36964128 PMCID: PMC10039076 DOI: 10.1038/s41467-023-37076-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2022] [Accepted: 03/01/2023] [Indexed: 03/26/2023] Open
Abstract
During the past two decades, it has been established that a non-trivial electron wave-function topology generates an anomalous Hall effect (AHE), which shows itself as a Hall conductivity non-linear in magnetic field. Here, we report on an unprecedented case of field-linear AHE. In Mn3Sn, a kagome magnet, the out-of-plane Hall response, which shows an abrupt jump, was discovered to be a case of AHE. We find now that the in-plane Hall response, which is perfectly linear in magnetic field, is set by the Berry curvature of the wavefunction. The amplitude of the Hall response and its concomitant Nernst signal exceed by far what is expected in the semiclassical picture. We argue that magnetic field induces out-of-plane spin canting and thereafter gives rise to nontrivial spin chirality on the kagome lattice. In band structure, we find that the spin chirality modifies the topology by gapping out Weyl nodal lines unknown before, accounting for the AHE observed. Our work reveals intriguing unification of real-space Berry phase from spin chirality and momentum-space Berry curvature in a kagome material.
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Affiliation(s)
- Xiaokang Li
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Jahyun Koo
- Department of Condensed Matter Physics, Weizmann Institute of Science, 7610001, Rehovot, Israel
| | - Zengwei Zhu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Kamran Behnia
- Laboratoire de Physique et d'Étude des Matériaux (ESPCI-CNRS-Sorbonne Université), PSL Research University, 75005, Paris, France
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, 7610001, Rehovot, Israel.
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23
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Fujisawa Y, Pardo-Almanza M, Hsu CH, Mohamed A, Yamagami K, Krishnadas A, Chang G, Chuang FC, Khoo KH, Zang J, Soumyanarayanan A, Okada Y. Widely Tunable Berry Curvature in the Magnetic Semimetal Cr 1+ δ Te 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207121. [PMID: 36642840 DOI: 10.1002/adma.202207121] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Revised: 11/17/2022] [Indexed: 06/17/2023]
Abstract
Magnetic semimetals have increasingly emerged as lucrative platforms hosting spin-based topological phenomena in real and momentum spaces. Cr1+ δ Te2 is a self-intercalated magnetic transition metal dichalcogenide (TMD), which exhibits topological magnetism and tunable electron filling. While recent studies have explored real-space Berry curvature effects, similar considerations of momentum-space Berry curvature are lacking. Here, the electronic structure and transport properties of epitaxial Cr1+ δ Te2 thin films are systematically investigated over a range of doping, δ (0.33 - 0.71). Spectroscopic experiments reveal the presence of a characteristic semi-metallic band region, which shows a rigid like energy shift with δ. Transport experiments show that the intrinsic component of the anomalous Hall effect (AHE) is sizable and undergoes a sign flip across δ. Finally, density functional theory calculations establish a link between the doping evolution of the band structure and AHE: the AHE sign flip is shown to emerge from the sign change of the Berry curvature, as the semi-metallic band region crosses the Fermi energy. These findings underscore the increasing relevance of momentum-space Berry curvature in magnetic TMDs and provide a unique platform for intertwining topological physics in real and momentum spaces.
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Affiliation(s)
- Yuita Fujisawa
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Markel Pardo-Almanza
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Chia-Hsiu Hsu
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
- Department of Physics, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei, 10617, Taiwan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Atwa Mohamed
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Kohei Yamagami
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Anjana Krishnadas
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
| | - Guoqing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei, 10617, Taiwan
- Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan
| | - Khoong Hong Khoo
- Institute of High Performance Computing, Agency for Science Technology and Research, Singapore, 138632, Singapore
| | - Jiadong Zang
- Department of Physics and Astronomy, University of New Hampshire, Durham, NH 03824, USA
- Materials Science Program, University of New Hampshire, Durham, NH 03824, USA
| | - Anjan Soumyanarayanan
- Department of Physics, National University of Singapore, Singapore, 117551, Singapore
- Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore, 138634, Singapore
| | - Yoshinori Okada
- Quantum Materials Science Unit, Okinawa Institute of Science and Technology (OIST), Okinawa, 904-0495, Japan
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24
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Wang X, Zhou X, Yan H, Qin P, Chen H, Meng Z, Feng Z, Liu L, Liu Z. Topological Hall Effect in Thin Films of an Antiferromagnetic Weyl Semimetal Integrated on Si. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7572-7577. [PMID: 36700918 DOI: 10.1021/acsami.2c20644] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Since the large room-temperature anomalous Hall effect was discovered in noncollinear antiferromagnets, Mn3Sn has received immense research interest as it exhibits abundant exotic physical properties including Weyl points and enormous potential for antiferromagnetic spintronic device applications. In this work, we report the emergence of the topological Hall effect in Mn3Sn films grown on Si that is the workhorse for the modern highly integrated information technology. Importantly, through a series of systematic comparative experiments, the intriguing topological Hall effect phenomenon related to the appearance of the noncoplanar chiral spin structure is found to be induced by the Mn3Sn/SiO2 interface. Furthermore, it was found that the current injection to a Pt/Mn3Sn bilayer Hall bar device can effectively manipulate the chiral spin structure of Mn3Sn, which demonstrates the feasibility of Si-based noncollinear antiferromagnetic spintronics.
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Affiliation(s)
- Xiaoning Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Xiaorong Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Han Yan
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Peixin Qin
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Hongyu Chen
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Ziang Meng
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zexin Feng
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Li Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhiqi Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
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25
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Deng Y, Liu X, Chen Y, Du Z, Jiang N, Shen C, Zhang E, Zheng H, Lu HZ, Wang K. All-electrical switching of a topological non-collinear antiferromagnet at room temperature. Natl Sci Rev 2023; 10:nwac154. [PMID: 36872930 PMCID: PMC9977383 DOI: 10.1093/nsr/nwac154] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Accepted: 07/31/2022] [Indexed: 11/14/2022] Open
Abstract
Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interest. However, the all-electrical control of such systems at room temperature, a crucial step toward practical application, has not been reported. Here, using a small writing current density of around 5 × 106 A·cm-2, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn, with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, and without external magnetic field or injected spin current. Our simulations reveal that the switching originates from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.
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Affiliation(s)
- Yongcheng Deng
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xionghua Liu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yiyuan Chen
- Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China.,International Quantum Academy, Shenzhen 518048, China
| | - Zongzheng Du
- Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China.,International Quantum Academy, Shenzhen 518048, China
| | - Nai Jiang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chao Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Enze Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Houzhi Zheng
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hai-Zhou Lu
- Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China.,International Quantum Academy, Shenzhen 518048, China
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.,Beijing Academy of Quantum Information Sciences, Beijing 100193, China.,Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
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26
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Cheng ZJ, Belopolski I, Tien HJ, Cochran TA, Yang XP, Ma W, Yin JX, Chen D, Zhang J, Jozwiak C, Bostwick A, Rotenberg E, Cheng G, Hossain MS, Zhang Q, Litskevich M, Jiang YX, Yao N, Schroeter NBM, Strocov VN, Lian B, Felser C, Chang G, Jia S, Chang TR, Hasan MZ. Visualization of Tunable Weyl Line in A-A Stacking Kagome Magnets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205927. [PMID: 36385535 DOI: 10.1002/adma.202205927] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 10/19/2022] [Indexed: 06/16/2023]
Abstract
Kagome magnets provide a fascinating platform for a plethora of topological quantum phenomena, in which the delicate interplay between frustrated crystal structure, magnetization, and spin-orbit coupling (SOC) can engender highly tunable topological states. Here, utilizing angle-resolved photoemission spectroscopy, the Weyl lines are directly visualized with strong out-of-plane dispersion in the A-A stacked kagome magnet GdMn6 Sn6 . Remarkably, the Weyl lines exhibit a strong magnetization-direction-tunable SOC gap and binding energy tunability after substituting Gd with Tb and Li, respectively. These results not only illustrate the magnetization direction and valence counting as efficient tuning knobs for realizing and controlling distinct 3D topological phases, but also demonstrate AMn6 Sn6 (A = rare earth, or Li, Mg, or Ca) as a versatile material family for exploring diverse emergent topological quantum responses.
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Affiliation(s)
- Zi-Jia Cheng
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Ilya Belopolski
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Hung-Ju Tien
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Tyler A Cochran
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Xian P Yang
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Wenlong Ma
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Jia-Xin Yin
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Dong Chen
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Junyi Zhang
- Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Chris Jozwiak
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Aaron Bostwick
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Eli Rotenberg
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Guangming Cheng
- Princeton Institute for Science and Technology of Materials, Princeton University, Princeton, NJ, 08544, USA
| | - Md Shafayat Hossain
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Qi Zhang
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Maksim Litskevich
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Yu-Xiao Jiang
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Nan Yao
- Princeton Institute for Science and Technology of Materials, Princeton University, Princeton, NJ, 08544, USA
| | | | - Vladimir N Strocov
- Swiss Light Source, Paul Scherrer Institute, 5232, Villigen, Switzerland
| | - Biao Lian
- Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Guoqing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research and Technology (QFort), Tainan, 701, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei, 10617, Taiwan
| | - M Zahid Hasan
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ, 08544, USA
- Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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27
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Chen X, Higo T, Tanaka K, Nomoto T, Tsai H, Idzuchi H, Shiga M, Sakamoto S, Ando R, Kosaki H, Matsuo T, Nishio-Hamane D, Arita R, Miwa S, Nakatsuji S. Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction. Nature 2023; 613:490-495. [PMID: 36653566 PMCID: PMC9849134 DOI: 10.1038/s41586-022-05463-w] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Accepted: 10/19/2022] [Indexed: 01/19/2023]
Abstract
The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics devices1-5. Thus, tunnelling magnetoresistance (TMR) is considered to be proportional to spin polarization at the interface1 and, to date, has been studied primarily in ferromagnets. Here we report observation of TMR in an all-antiferromagnetic tunnel junction consisting of Mn3Sn/MgO/Mn3Sn (ref. 6). We measured a TMR ratio of around 2% at room temperature, which arises between the parallel and antiparallel configurations of the cluster magnetic octupoles in the chiral antiferromagnetic state. Moreover, we carried out measurements using a Fe/MgO/Mn3Sn MTJ and show that the sign and direction of anisotropic longitudinal spin-polarized current in the antiferromagnet7 can be controlled by octupole direction. Strikingly, the TMR ratio (about 2%) of the all-antiferromagnetic MTJ is much larger than that estimated using the observed spin polarization. Theoretically, we found that the chiral antiferromagnetic MTJ may produce a substantially large TMR ratio as a result of the time-reversal, symmetry-breaking polarization characteristic of cluster magnetic octupoles. Our work lays the foundation for the development of ultrafast and efficient spintronic devices using antiferromagnets8-10.
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Affiliation(s)
- Xianzhe Chen
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Tomoya Higo
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan.,CREST, Japan Science and Technology Agency, Saitama, Japan
| | - Katsuhiro Tanaka
- Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan
| | - Takuya Nomoto
- Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan.,PRESTO, Japan Science and Technology Agency, Saitama, Japan
| | - Hanshen Tsai
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Hiroshi Idzuchi
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Masanobu Shiga
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Shoya Sakamoto
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Ryoya Ando
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Hidetoshi Kosaki
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Takumi Matsuo
- Department of Physics, University of Tokyo, Tokyo, Japan
| | | | - Ryotaro Arita
- CREST, Japan Science and Technology Agency, Saitama, Japan.,Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan.,RIKEN, Center for Emergent Matter Science, Saitama, Japan
| | - Shinji Miwa
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan.,CREST, Japan Science and Technology Agency, Saitama, Japan.,Trans-scale Quantum Science Institute, University of Tokyo, Tokyo, Japan
| | - Satoru Nakatsuji
- Department of Physics, University of Tokyo, Tokyo, Japan. .,Institute for Solid State Physics, University of Tokyo, Chiba, Japan. .,CREST, Japan Science and Technology Agency, Saitama, Japan. .,Trans-scale Quantum Science Institute, University of Tokyo, Tokyo, Japan. .,Canadian Institute for Advanced Research, Toronto, Ontario, Canada.
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28
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Du Q, Hu Z, Han MG, Camino F, Zhu Y, Petrovic C. Topological Hall Effect Anisotropy in Kagome Bilayer Metal Fe_{3}Sn_{2}. PHYSICAL REVIEW LETTERS 2022; 129:236601. [PMID: 36563198 DOI: 10.1103/physrevlett.129.236601] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Revised: 07/07/2022] [Accepted: 10/28/2022] [Indexed: 06/17/2023]
Abstract
Kagome lattice materials have attracted growing interest for their topological properties and flatbands in electronic structure. We present a comprehensive study on the anisotropy and out-of-plane electric transport in Fe_{3}Sn_{2}, a metal with bilayer of Fe kagome planes and with massive Dirac fermions that features high-temperature noncollinear magnetic structure and magnetic skyrmions. For the electrical current path along the c axis, in micron-size crystals, we found a large topological Hall effect over a wide temperature range down to spin-glass state. Twofold and fourfold angular magnetoresistance are observed for different magnetic phases, reflecting the competition of magnetic interactions and magnetic anisotropy in kagome lattice that preserve robust topological Hall effect for inter-kagome bilayer currents. This provides new insight into the anisotropy in Fe_{3}Sn_{2}, of interest in skyrmionic-bubble application-related micron-size devices.
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Affiliation(s)
- Qianheng Du
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
- Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, New York 11790, USA
| | - Zhixiang Hu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
- Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, New York 11790, USA
| | - Myung-Geun Han
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Fernando Camino
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Yimei Zhu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - C Petrovic
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
- Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, New York 11790, USA
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29
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Abstract
A kagome lattice naturally features Dirac fermions, flat bands and van Hove singularities in its electronic structure. The Dirac fermions encode topology, flat bands favour correlated phenomena such as magnetism, and van Hove singularities can lead to instabilities towards long-range many-body orders, altogether allowing for the realization and discovery of a series of topological kagome magnets and superconductors with exotic properties. Recent progress in exploring kagome materials has revealed rich emergent phenomena resulting from the quantum interactions between geometry, topology, spin and correlation. Here we review these key developments in this field, starting from the fundamental concepts of a kagome lattice, to the realizations of Chern and Weyl topological magnetism, to various flat-band many-body correlations, and then to the puzzles of unconventional charge-density waves and superconductivity. We highlight the connection between theoretical ideas and experimental observations, and the bond between quantum interactions within kagome magnets and kagome superconductors, as well as their relation to the concepts in topological insulators, topological superconductors, Weyl semimetals and high-temperature superconductors. These developments broadly bridge topological quantum physics and correlated many-body physics in a wide range of bulk materials and substantially advance the frontier of topological quantum matter.
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30
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Kato T, Li Y, Nakayama K, Wang Z, Souma S, Matsui F, Kitamura M, Horiba K, Kumigashira H, Takahashi T, Yao Y, Sato T. Fermiology and Origin of T_{c} Enhancement in a Kagome Superconductor Cs(V_{1-x}Nb_{x})_{3}Sb_{5}. PHYSICAL REVIEW LETTERS 2022; 129:206402. [PMID: 36461993 DOI: 10.1103/physrevlett.129.206402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Revised: 06/14/2022] [Accepted: 10/06/2022] [Indexed: 06/17/2023]
Abstract
Kagome metals AV_{3}Sb_{5} (A=K, Rb, and Cs) exhibit a characteristic superconducting ground state coexisting with a charge density wave (CDW), whereas the mechanisms of the superconductivity and CDW have yet to be clarified. Here we report a systematic angle-resolved photoemission spectroscopy (ARPES) study of Cs(V_{1-x}Nb_{x})_{3}Sb_{5} as a function of Nb content x, where isovalent Nb substitution causes an enhancement of superconducting transition temperature (T_{c}) and the reduction of CDW temperature (T_{CDW}). We found that the Nb substitution shifts the Sb-derived electron band at the Γ point downward and simultaneously moves the V-derived band around the M point upward to lift up the saddle point (SP) away from the Fermi level, leading to the reduction of the CDW-gap magnitude and T_{CDW}. This indicates a primary role of the SP density of states to stabilize the CDW. The present result also suggests that the enhancement of superconductivity by Nb substitution is caused by the cooperation between the expansion of the Sb-derived electron pocket and the recovery of the V-derived density of states at the Fermi level.
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Affiliation(s)
- Takemi Kato
- Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
| | - Yongkai Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314011, People's Republic of China
| | - Kosuke Nakayama
- Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
- Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency (JST), Tokyo 102-0076, Japan
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314011, People's Republic of China
| | - Seigo Souma
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai 980-8577, Japan
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
| | - Fumihiko Matsui
- UVSOR Synchrotron Facility, Institute for Molecular Science, Okazaki 444-8585, Japan
| | - Miho Kitamura
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan
| | - Koji Horiba
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan
- National Institutes for Quantum Science and Technology (QST), Sendai 980-8579, Japan
| | - Hiroshi Kumigashira
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
| | - Takashi Takahashi
- Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai 980-8577, Japan
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Takafumi Sato
- Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai 980-8577, Japan
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
- International Center for Synchrotron Radiation Innovation Smart (SRIS), Tohoku University, Sendai 980-8577, Japan
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31
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Song J, Oh T, Ko EK, Lee JH, Kim WJ, Zhu Y, Yang BJ, Li Y, Noh TW. Higher harmonics in planar Hall effect induced by cluster magnetic multipoles. Nat Commun 2022; 13:6501. [PMID: 36310175 PMCID: PMC9618580 DOI: 10.1038/s41467-022-34189-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2022] [Accepted: 10/13/2022] [Indexed: 11/11/2022] Open
Abstract
Antiferromagnetic (AFM) materials are attracting tremendous attention due to their spintronic applications and associated novel topological phenomena. However, detecting and identifying the spin configurations in AFM materials are quite challenging due to the absence of net magnetization. Herein, we report the practicality of utilizing the planar Hall effect (PHE) to detect and distinguish “cluster magnetic multipoles” in AFM Nd2Ir2O7 (NIO-227) fully strained films. By imposing compressive strain on the spin structure of NIO-227, we artificially induced cluster magnetic multipoles, namely dipoles and A2- and T1-octupoles. Importantly, under magnetic field rotation, each magnetic multipole exhibits distinctive harmonics of the PHE oscillation. Moreover, the planar Hall conductivity has a nonlinear magnetic field dependence, which can be attributed to the magnetic response of the cluster magnetic octupoles. Our work provides a strategy for identifying cluster magnetic multipoles in AFM systems and would promote octupole-based AFM spintronics. The lack of net magnetization in antiferromagnets makes them technologically promising, but it also makes detecting the spin orders challenging. Here, using electrical transport measurement, Song et al show how the planar Hall effect can detect different cluster magnetic multipoles in antiferromagnetic Nd2Ir2O7 film.
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32
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Xu L, Niu H, Bai Y, Zhu H, Yuan S, He X, Han Y, Zhao L, Yang Y, Xia Z, Liang Q, Tian Z. Shubnikov-de Haas oscillations and nontrivial topological states in Weyl semimetal candidate SmAlSi. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:485701. [PMID: 36206748 DOI: 10.1088/1361-648x/ac987a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2022] [Accepted: 10/07/2022] [Indexed: 06/16/2023]
Abstract
The RAlX (R = Light rare earth; X = Ge, Si) compounds, as a family of magnetic Weyl semimetal, have recently attracted growing attention due to the tunability of Weyl nodes and its interactions with diverse magnetism by rare-earth atoms. Here, we report the magnetotransport evidence and electronic structure calculations on nontrivial band topology of SmAlSi, a new member of this family. At low temperatures, SmAlSi exhibits large non-saturated magnetoresistance (MR) (as large as ∼5500% at 2 K and 48 T) and distinct Shubnikov-de Haas (SdH) oscillations. The field dependent MRs at 2 K deviate from the semiclassical (μ0H)2variation but follow the power-law relation MR∝(μ0H)mwith a crossover fromm∼ 1.52 at low fields (μ0H< 15 T) tom∼ 1 under high fields (μ0H> 18 T), which is attributed to the existence of Weyl points and electron-hole compensated characteristics with high mobility. From the analysis of SdH oscillations, two fundamental frequencies originating from the Fermi surface pockets with non-trivialπBerry phases and small cyclotron mass can be identified, this feature is supported by the calculated electronic band structures with two Weyl pockets near the Fermi level. Our study establishes SmAlSi as a paradigm for researching the novel topological states of RAlX family.
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Affiliation(s)
- Longmeng Xu
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Haoyu Niu
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Yuming Bai
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Haipeng Zhu
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Songliu Yuan
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xiong He
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Yibo Han
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Lingxiao Zhao
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Yang Yang
- School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
| | - Zhengcai Xia
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Qifeng Liang
- Department of Physics, Shaoxing University, Shaoxing 312000, People's Republic of China
| | - Zhaoming Tian
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, Guangdong 518057, People's Republic of China
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33
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Mihalyuk AN, Gruznev DV, Bondarenko LV, Tupchaya AY, Vekovshinin YE, Eremeev SV, Zotov AV, Saranin AA. A 2D heavy fermion CePb 3 kagome material on silicon: emergence of unique spin polarized states for spintronics. NANOSCALE 2022; 14:14732-14740. [PMID: 36172823 DOI: 10.1039/d2nr04280k] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
We report on the successful synthesis of a 2D atomically thin heavy-fermion CePb3 kagome compound on a Si(111) surface. Growth and morphology were controlled and characterized through scanning tunneling microscopy observations revealing the high crystalline quality of the sample. Angle-resolved photoelectron spectroscopy measurements revealed the giant highly-anisotropic Rashba-like spin splitting of the surface states and semi-metallic character of the spectrum. According to the DFT calculations, the occupied hole and unoccupied electron states with huge spin-orbit splitting and out-of-plane spin polarization reside at the M̄ points near the Fermi level EF, which is ≈100 meV above the experimental one. The out-of-plane FM magnetization was found to be preferred with Ce spin and orbital magnetic momenta values of 0.895μB and -0.840μB, respectively. The spin-split states near EF are primarily formed by Pb pxy orbitals with the admixing of Ce d and f electrons due to the Ce f-d hybridization acquired asymmetry with respect to the sign of k∥. The observed electronic structure of the CePb3/Si(111)√3 × √3 system is rather unique and in the hole-doped state, like in our experiment, can be enabled in the tunable spin current regime, which makes it a prospective 2D material for spintronic applications.
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Affiliation(s)
- Alexey N Mihalyuk
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia.
- Institute of High Technologies and Advanced Materials, Far Eastern Federal University, 690950 Vladivostok, Russia
| | - Dimitry V Gruznev
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia.
| | - Leonid V Bondarenko
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia.
| | - Alexandra Y Tupchaya
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia.
| | - Yuriy E Vekovshinin
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia.
| | - Sergey V Eremeev
- Institute of Strength Physics and Materials Science, Tomsk 634055, Russia
| | - Andrey V Zotov
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia.
| | - Alexander A Saranin
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia.
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34
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Xie H, Chen X, Zhang Q, Mu Z, Zhang X, Yan B, Wu Y. Magnetization switching in polycrystalline Mn 3Sn thin film induced by self-generated spin-polarized current. Nat Commun 2022; 13:5744. [PMID: 36180425 PMCID: PMC9525633 DOI: 10.1038/s41467-022-33345-2] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2021] [Accepted: 09/13/2022] [Indexed: 11/13/2022] Open
Abstract
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn3Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn3Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore, the switching polarity reverses when the MgO thickness exceeds around 3 nm, which cannot be explained by the spin-orbit torque scenario due to spin current injection from the Ta layer. Evident current-induced switching is also observed in MgO/Mn3Sn and Ti/Mn3Sn bilayers, where external injection of spin Hall current to Mn3Sn is negligible. The inter-grain spin-transfer torque induced by spin-polarized current explains the experimental observations. Our findings provide an alternative pathway for electrical manipulation of non-collinear antiferromagnetic state without resorting to the conventional bilayer structure. Under an applied current, chiral antiferromagnets, such as Mn3Sn, can produce a spin-polarized current. Here, by varying the thickness of a buffering layer, the authors show that this spin-polarized current can drive self-induced switching in polycrystalline Mn3Sn.
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Affiliation(s)
- Hang Xie
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Xin Chen
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Qi Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Xueyuan Rd. 1088, Shenzhen, 518055, China
| | - Zhiqiang Mu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Xinhai Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Xueyuan Rd. 1088, Shenzhen, 518055, China
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel.
| | - Yihong Wu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
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35
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Zhou X, Zhang RW, Yang X, Li XP, Feng W, Mokrousov Y, Yao Y. Disorder- and Topology-Enhanced Fully Spin-Polarized Currents in Nodal Chain Spin-Gapless Semimetals. PHYSICAL REVIEW LETTERS 2022; 129:097201. [PMID: 36083680 DOI: 10.1103/physrevlett.129.097201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Revised: 04/27/2022] [Accepted: 08/03/2022] [Indexed: 06/15/2023]
Abstract
Recently discovered high-quality nodal chain spin-gapless semimetals MF_{3} (M=Pd, Mn) feature an ultraclean nodal chain in the spin up channel residing right at the Fermi level and displaying a large spin gap leading to a 100% spin polarization of transport properties. Here, we investigate both intrinsic and extrinsic contributions to anomalous and spin transport in this class of materials. The dominant intrinsic origin is found to originate entirely from the gapped nodal chains without the entanglement of any other trivial bands. The side-jump mechanism is predicted to be negligibly small, but intrinsic skew scattering enhances the intrinsic Hall and Nernst signals significantly, leading to large values of respective conductivities. Our findings open a new material platform for exploring strong anomalous and spin transport properties in magnetic topological semimetals.
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Affiliation(s)
- Xiaodong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Run-Wu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiuxian Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiao-Ping Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Wanxiang Feng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yuriy Mokrousov
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
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36
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Go D, Sallermann M, Lux FR, Blügel S, Gomonay O, Mokrousov Y. Noncollinear Spin Current for Switching of Chiral Magnetic Textures. PHYSICAL REVIEW LETTERS 2022; 129:097204. [PMID: 36083678 DOI: 10.1103/physrevlett.129.097204] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2022] [Revised: 06/10/2022] [Accepted: 07/25/2022] [Indexed: 06/15/2023]
Abstract
We propose a concept of noncollinear spin current, whose spin polarization varies in space even in nonmagnetic crystals. While it is commonly assumed that the spin polarization of the spin Hall current is uniform, asymmetric local crystal potential generally allows the spin polarization to be noncollinear in space. Based on microscopic considerations, we demonstrate that such noncollinear spin Hall currents can be observed, for example, in layered Kagome Mn_{3}X (X=Ge, Sn) compounds. Moreover, by referring to atomistic spin dynamics simulations we show that noncollinear spin currents can be used to switch the chiral spin texture of Mn_{3}X in a deterministic way even in the absence of an external magnetic field. Our theoretical prediction can be readily tested in experiments, which will open a novel route toward electric control of complex spin structures in noncollinear antiferromagnets.
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Affiliation(s)
- Dongwook Go
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Moritz Sallermann
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Science Institute and Faculty of Physical Sciences, University of Iceland, VR-III, 107 Reykjavík, Iceland
| | - Fabian R Lux
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Stefan Blügel
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
| | - Olena Gomonay
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Yuriy Mokrousov
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
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37
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Hu S, Shao DF, Yang H, Pan C, Fu Z, Tang M, Yang Y, Fan W, Zhou S, Tsymbal EY, Qiu X. Efficient perpendicular magnetization switching by a magnetic spin Hall effect in a noncollinear antiferromagnet. Nat Commun 2022; 13:4447. [PMID: 35915121 PMCID: PMC9343665 DOI: 10.1038/s41467-022-32179-2] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Accepted: 07/19/2022] [Indexed: 11/28/2022] Open
Abstract
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiting a magnetic spin Hall effect in noncollinear antiferromagnets, such as Mn3Sn. The magnetic group symmetry of Mn3Sn allows generation of the out-of-plane spin current carrying spin polarization collinear to its direction induced by an in-plane charge current. This spin current drives an out-of-plane anti-damping torque providing the deterministic switching of the perpendicular magnetization of an adjacent Ni/Co multilayer. Due to being odd with respect to time reversal symmetry, the observed magnetic spin Hall effect and the resulting spin-orbit torque can be reversed with reversal of the antiferromagnetic order. Contrary to the conventional spin-orbit torque devices, the demonstrated magnetization switching does not need an external magnetic field and requires much lower current density which is useful for low-power spintronics. Spin-orbit torques driven by the conventional spin Hall effect are widely used to switch magnetization, but this approach is nondeterministic and inefficient for magnets with perpendicular magnetic anisotropy. Here, the authors demonstrate deterministic, field-free switching in a Ni/Co multilayer by exploiting the magnetic spin Hall effect in adjacent Mn3Sn.
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Affiliation(s)
- Shuai Hu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Ding-Fu Shao
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588-0299, USA.,Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
| | - Huanglin Yang
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Chang Pan
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Zhenxiao Fu
- School of Information Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, ShanghaiTech University, Shanghai, 201210, China
| | - Meng Tang
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Yumeng Yang
- School of Information Science and Technology, ShanghaiTech University, Shanghai, 201210, China. .,Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, ShanghaiTech University, Shanghai, 201210, China.
| | - Weijia Fan
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Shiming Zhou
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588-0299, USA.
| | - Xuepeng Qiu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
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38
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Perpendicular full switching of chiral antiferromagnetic order by current. Nature 2022; 607:474-479. [PMID: 35859198 DOI: 10.1038/s41586-022-04864-1] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Accepted: 05/12/2022] [Indexed: 11/09/2022]
Abstract
Electrical control of a magnetic state of matter lays the foundation for information technologies and for understanding of spintronic phenomena. Spin-orbit torque provides an efficient mechanism for the electrical manipulation of magnetic orders1-11. In particular, spin-orbit torque switching of perpendicular magnetization in nanoscale ferromagnetic bits has enabled the development of stable, reliable and low-power memories and computation12-14. Likewise, for antiferromagnetic spintronics, electrical bidirectional switching of an antiferromagnetic order in a perpendicular geometry may have huge impacts, given its potential advantage for high-density integration and ultrafast operation15,16. Here we report the experimental realization of perpendicular and full spin-orbit torque switching of an antiferromagnetic binary state. We use the chiral antiferromagnet Mn3Sn (ref. 17), which exhibits the magnetization-free anomalous Hall effect owing to a ferroic order of a cluster magnetic octupole hosted in its chiral antiferromagnetic state18. We fabricate heavy-metal/Mn3Sn heterostructures by molecular beam epitaxy and introduce perpendicular magnetic anisotropy of the octupole using an epitaxial in-plane tensile strain. By using the anomalous Hall effect as the readout, we demonstrate 100 per cent switching of the perpendicular octupole polarization in a 30-nanometre-thick Mn3Sn film with a small critical current density of less than 15 megaamperes per square centimetre. Our theory reveals that the perpendicular geometry between the polarization directions of current-induced spin accumulation and of the octupole persistently maximizes the spin-orbit torque efficiency during the deterministic bidirectional switching process. Our work provides a significant basis for antiferromagnetic spintronics.
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39
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Yan GQ, Li S, Lu H, Huang M, Xiao Y, Wernert L, Brock JA, Fullerton EE, Chen H, Wang H, Du CR. Quantum Sensing and Imaging of Spin-Orbit-Torque-Driven Spin Dynamics in the Non-Collinear Antiferromagnet Mn 3 Sn. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200327. [PMID: 35322479 DOI: 10.1002/adma.202200327] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 03/02/2022] [Indexed: 06/14/2023]
Abstract
Novel non-collinear antiferromagnets with spontaneous time-reversal symmetry breaking, non-trivial band topology, and unconventional transport properties have received immense research interest over the past decade due to their rich physics and enormous promise in technological applications. One of the central focuses in this emerging field is exploring the relationship between the microscopic magnetic structure and exotic material properties. Here, nanoscale imaging of both spin-orbit-torque-induced deterministic magnetic switching and chiral spin rotation in non-collinear antiferromagnet Mn3 Sn films using nitrogen-vacancy (NV) centers are reported. Direct evidence of the off-resonance dipole-dipole coupling between the spin dynamics in Mn3 Sn and proximate NV centers is also demonstrated by NV relaxometry measurements. These results demonstrate the unique capabilities of NV centers in accessing the local information of the magnetic order and dynamics in these emergent quantum materials and suggest new opportunities for investigating the interplay between topology and magnetism in a broad range of topological magnets.
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Affiliation(s)
- Gerald Q Yan
- Department of Physics, University of California, La Jolla, San Diego, CA, 92093, USA
| | - Senlei Li
- Department of Physics, University of California, La Jolla, San Diego, CA, 92093, USA
| | - Hanyi Lu
- Department of Physics, University of California, La Jolla, San Diego, CA, 92093, USA
| | - Mengqi Huang
- Department of Physics, University of California, La Jolla, San Diego, CA, 92093, USA
| | - Yuxuan Xiao
- Center for Memory and Recording Research, University of California, La Jolla, San Diego, CA, 92093-0401, USA
| | - Luke Wernert
- Department of Physics, Colorado State University, Fort Collins, CO, 80523, USA
| | - Jeffrey A Brock
- Center for Memory and Recording Research, University of California, La Jolla, San Diego, CA, 92093-0401, USA
| | - Eric E Fullerton
- Center for Memory and Recording Research, University of California, La Jolla, San Diego, CA, 92093-0401, USA
| | - Hua Chen
- Department of Physics, Colorado State University, Fort Collins, CO, 80523, USA
- School of Advanced Materials Discovery, Colorado State University, Fort Collins, CO, 80523, USA
| | - Hailong Wang
- Center for Memory and Recording Research, University of California, La Jolla, San Diego, CA, 92093-0401, USA
| | - Chunhui Rita Du
- Department of Physics, University of California, La Jolla, San Diego, CA, 92093, USA
- Center for Memory and Recording Research, University of California, La Jolla, San Diego, CA, 92093-0401, USA
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40
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Qin P, Yan H, Fan B, Feng Z, Zhou X, Wang X, Chen H, Meng Z, Duan W, Tang P, Liu Z. Chemical Potential Switching of the Anomalous Hall Effect in an Ultrathin Noncollinear Antiferromagnetic Metal. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200487. [PMID: 35393740 DOI: 10.1002/adma.202200487] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2022] [Revised: 03/16/2022] [Indexed: 06/14/2023]
Abstract
The discovery of the anomalous Hall effect in noncollinear antiferromagnetic metals represents one of the most important breakthroughs for the emergent antiferromagnetic spintronics. The tuning of chemical potential has been an important theoretical approach to varying the anomalous Hall conductivity, but the direct experimental demonstration has been challenging owing to the large carrier density of metals. In this work, an ultrathin noncollinear antiferromagnetic Mn3 Ge film is fabricated and its carrier density is modulated by ionic liquid gating. Via a small voltage of ≈3 V, its carrier density is altered by ≈90% and, accordingly, the anomalous Hall effect is completely switched off. This work thus creates an attractive new way to steering the anomalous Hall effect in noncollinear antiferromagnets.
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Affiliation(s)
- Peixin Qin
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Han Yan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Benshu Fan
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Frontier Science Center for Quantum Information, Beijing, 100084, China
| | - Zexin Feng
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaorong Zhou
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaoning Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Hongyu Chen
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Ziang Meng
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Wenhui Duan
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Frontier Science Center for Quantum Information, Beijing, 100084, China
| | - Peizhe Tang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761, Hamburg, Germany
| | - Zhiqi Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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41
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A new class of bilayer kagome lattice compounds with Dirac nodal lines and pressure-induced superconductivity. Nat Commun 2022; 13:2773. [PMID: 35589799 PMCID: PMC9120444 DOI: 10.1038/s41467-022-30442-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Accepted: 04/27/2022] [Indexed: 11/08/2022] Open
Abstract
Kagome lattice composed of transition-metal ions provides a great opportunity to explore the intertwining between geometry, electronic orders and band topology. The discovery of multiple competing orders that connect intimately with the underlying topological band structure in nonmagnetic kagome metals AV3Sb5 (A = K, Rb, Cs) further pushes this topic to the quantum frontier. Here we report a new class of vanadium-based compounds with kagome bilayers, namely AV6Sb6 (A = K, Rb, Cs) and V6Sb4, which, together with AV3Sb5, compose a series of kagome compounds with a generic chemical formula (Am-1Sb2m)(V3Sb)n (m = 1, 2; n = 1, 2). Theoretical calculations combined with angle-resolved photoemission measurements reveal that these compounds feature Dirac nodal lines in close vicinity to the Fermi level. Pressure-induced superconductivity in AV6Sb6 further suggests promising emergent phenomena in these materials. The establishment of a new family of layered kagome materials paves the way for designer of fascinating kagome systems with diverse topological nontrivialities and collective ground states.
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42
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Investigation on crystal structure, electrical and magnetic properties of CeAl(Si1-xGex). J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.122877] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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43
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Progress and prospects in magnetic topological materials. Nature 2022; 603:41-51. [PMID: 35236973 DOI: 10.1038/s41586-021-04105-x] [Citation(s) in RCA: 37] [Impact Index Per Article: 18.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2020] [Accepted: 10/06/2021] [Indexed: 11/09/2022]
Abstract
Magnetic topological materials represent a class of compounds with properties that are strongly influenced by the topology of their electronic wavefunctions coupled with the magnetic spin configuration. Such materials can support chiral electronic channels of perfect conduction, and can be used for an array of applications, from information storage and control to dissipationless spin and charge transport. Here we review the theoretical and experimental progress achieved in the field of magnetic topological materials, beginning with the theoretical prediction of the quantum anomalous Hall effect without Landau levels, and leading to the recent discoveries of magnetic Weyl semimetals and antiferromagnetic topological insulators. We outline recent theoretical progress that has resulted in the tabulation of, for the first time, all magnetic symmetry group representations and topology. We describe several experiments realizing Chern insulators, Weyl and Dirac magnetic semimetals, and an array of axionic and higher-order topological phases of matter, and we survey future perspectives.
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44
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Yu J, Xu Z, Xiao K, Yuan Y, Yin Q, Hu Z, Gong C, Guo Y, Tu Z, Tang P, Lei H, Xue QK, Li W. Evolution of Electronic Structure in Pristine and Rb-Reconstructed Surfaces of Kagome Metal RbV 3Sb 5. NANO LETTERS 2022; 22:918-925. [PMID: 35080413 DOI: 10.1021/acs.nanolett.1c03535] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report on in situ low-temperature (4 K) scanning tunneling microscope measurements of atomic and electronic structures of the cleaved surfaces of an alkali-based kagome metal RbV3Sb5 single crystals. We find that the dominant pristine surface exhibits Rb-1×1 structure, in which a unique unidirectional √3a0 charge order is discovered. As the sample temperature slightly rises, Rb-√3×1 and Rb-√3×√3 reconstructions form due to desorption of surface Rb atoms. Our conductance mapping results demonstrate that Rb desorption not only gives rise to hole doping but also reconstructs the electronic band structures. Surprisingly, we find a ubiquitous gap opening near the Fermi level in tunneling spectra on all the surfaces despite their large differences of hole-carrier concentration, indicating an orbital-selective band reconstruction in RbV3Sb5. The Rb desorption induced electronic reconstructions are further confirmed by our density functional theory calculations.
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Affiliation(s)
- Jiawei Yu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Zian Xu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Kebin Xiao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Yonghao Yuan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Qiangwei Yin
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Zhiqiang Hu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Chunsheng Gong
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Yunkai Guo
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Zhijun Tu
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Peizhe Tang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free-Electron Laser Science, 22761 Hamburg, Germany
| | - Hechang Lei
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Qi-Kun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Southern University of Science and Technology, Shenzhen 518055, China
| | - Wei Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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45
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Yang C, Zhao B, Cai W, Zhang ZM. Mid-infrared broadband circular polarizer based on Weyl semimetals. OPTICS EXPRESS 2022; 30:3035-3046. [PMID: 35209430 DOI: 10.1364/oe.445803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2021] [Accepted: 01/03/2022] [Indexed: 06/14/2023]
Abstract
As a three-dimensional topological phase of matter, Weyl semimetals possess extremely large gyrotropic optical response in the mid-infrared region, leading to the strong chiral anomaly. This study proposes a circular polarizer design with a double-WSM-layer structure. It is theoretically shown that the proposed polarizer possesses a high circular polarization efficiency and high average transmittance in the wavelength region from 9 µm to 15 µm at incidence angles up to 50°. The modified 4 × 4 matrix method is used to calculate the circularly polarized transmittance of Weyl semimetals in thin-film or multilayer structures. The temperature dependence on the transmittance is also examined to demonstrate the flexibility of the proposed polarizer in a varying temperature environment. This study reveals the technological prospect that Weyl semimetals are promising candidates for high-performance circular polarizers in infrared spectroscopy and polarimetry.
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46
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He QL, Hughes TL, Armitage NP, Tokura Y, Wang KL. Topological spintronics and magnetoelectronics. NATURE MATERIALS 2022; 21:15-23. [PMID: 34949869 DOI: 10.1038/s41563-021-01138-5] [Citation(s) in RCA: 32] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2020] [Accepted: 09/21/2021] [Indexed: 05/08/2023]
Abstract
Topological electronic materials, such as topological insulators, are distinct from trivial materials in the topology of their electronic band structures that lead to robust, unconventional topological states, which could bring revolutionary developments in electronics. This Perspective summarizes developments of topological insulators in various electronic applications including spintronics and magnetoelectronics. We group and analyse several important phenomena in spintronics using topological insulators, including spin-orbit torque, the magnetic proximity effect, interplay between antiferromagnetism and topology, and the formation of topological spin textures. We also outline recent developments in magnetoelectronics such as the axion insulator and the topological magnetoelectric effect observed using different topological insulators.
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Affiliation(s)
- Qing Lin He
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
| | - Taylor L Hughes
- Department of Physics and Institute for Condensed Matter Theory, University of Illinois at Urbana-Champaign, Urbana, IL, USA
| | - N Peter Armitage
- Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, MD, USA
| | - Yoshinori Tokura
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Tokyo College, University of Tokyo, Tokyo, Japan
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, USA.
- Center of Quantum Sciences and Engineering, University of California, Los Angeles, CA, USA.
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47
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Liu X, Fang S, Fu Y, Ge W, Kareev M, Kim JW, Choi Y, Karapetrova E, Zhang Q, Gu L, Choi ES, Wen F, Wilson JH, Fabbris G, Ryan PJ, Freeland JW, Haskel D, Wu W, Pixley JH, Chakhalian J. Magnetic Weyl Semimetallic Phase in Thin Films of Eu_{2}Ir_{2}O_{7}. PHYSICAL REVIEW LETTERS 2021; 127:277204. [PMID: 35061435 DOI: 10.1103/physrevlett.127.277204] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2021] [Revised: 11/19/2021] [Accepted: 11/24/2021] [Indexed: 06/14/2023]
Abstract
The interplay between electronic interactions and strong spin-orbit coupling is expected to create a plethora of fascinating correlated topological states of quantum matter. Of particular interest are magnetic Weyl semimetals originally proposed in the pyrochlore iridates, which are only expected to reveal their topological nature in thin film form. To date, however, direct experimental demonstrations of these exotic phases remain elusive, due to the lack of usable single crystals and the insufficient quality of available films. Here, we report on the discovery of signatures for the long-sought magnetic Weyl semimetallic phase in (111)-oriented Eu_{2}Ir_{2}O_{7} high-quality epitaxial thin films. We observed an intrinsic anomalous Hall effect with colossal coercivity but vanishing net magnetization, which emerges right below the onset of a peculiar magnetic phase with all-in-all-out (AIAO) antiferromagnetic ordering. The anomalous Hall conductivity obtained experimentally is consistent with the theoretical prediction, likely arising from the nonzero Berry curvature emanated by Weyl node pairs near the Fermi level that act as sources and sinks of Berry flux, activated by broken cubic crystal symmetry at the top and bottom terminations of the thin film.
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Affiliation(s)
- Xiaoran Liu
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 10019, P. R. China
| | - Shiang Fang
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
- Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, USA
| | - Yixing Fu
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
- Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, USA
| | - Wenbo Ge
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
| | - Mikhail Kareev
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
| | - Jong-Woo Kim
- X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Yongseong Choi
- X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Evguenia Karapetrova
- X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 10019, P. R. China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 10019, P. R. China
| | - Eun-Sang Choi
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
| | - Fangdi Wen
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
| | - Justin H Wilson
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
- Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, USA
- Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, USA
- Center for Computation & Technology, Louisiana State University, Baton Rouge, Louisiana 70803, USA
| | - Gilberto Fabbris
- X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Philip J Ryan
- X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - John W Freeland
- X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Daniel Haskel
- X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Weida Wu
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
| | - J H Pixley
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
- Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, USA
- Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, New York 10010, USA
- Physics Department, Princeton University, Princeton, New Jersey 08544, USA
| | - Jak Chakhalian
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
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48
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Belopolski I, Cochran TA, Liu X, Cheng ZJ, Yang XP, Guguchia Z, Tsirkin SS, Yin JX, Vir P, Thakur GS, Zhang SS, Zhang J, Kaznatcheev K, Cheng G, Chang G, Multer D, Shumiya N, Litskevich M, Vescovo E, Kim TK, Cacho C, Yao N, Felser C, Neupert T, Hasan MZ. Signatures of Weyl Fermion Annihilation in a Correlated Kagome Magnet. PHYSICAL REVIEW LETTERS 2021; 127:256403. [PMID: 35029418 DOI: 10.1103/physrevlett.127.256403] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2021] [Accepted: 11/12/2021] [Indexed: 06/14/2023]
Abstract
The manipulation of topological states in quantum matter is an essential pursuit of fundamental physics and next-generation quantum technology. Here we report the magnetic manipulation of Weyl fermions in the kagome spin-orbit semimetal Co_{3}Sn_{2}S_{2}, observed by high-resolution photoemission spectroscopy. We demonstrate the exchange collapse of spin-orbit-gapped ferromagnetic Weyl loops into paramagnetic Dirac loops under suppression of the magnetic order. We further observe that topological Fermi arcs disappear in the paramagnetic phase, suggesting the annihilation of exchange-split Weyl points. Our findings indicate that magnetic exchange collapse naturally drives Weyl fermion annihilation, opening new opportunities for engineering topology under correlated order parameters.
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Affiliation(s)
- Ilya Belopolski
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Tyler A Cochran
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Xiaoxiong Liu
- Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland
| | - Zi-Jia Cheng
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Xian P Yang
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Zurab Guguchia
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, Villigen PSI, Switzerland
| | - Stepan S Tsirkin
- Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland
| | - Jia-Xin Yin
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Praveen Vir
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187 Dresden, Germany
| | - Gohil S Thakur
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187 Dresden, Germany
- Faculty of Chemistry and Food Chemistry, Technische Universitat, 01069 Dresden, Germany
| | - Songtian S Zhang
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Junyi Zhang
- Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Konstantine Kaznatcheev
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Guangming Cheng
- Princeton Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, USA
| | - Guoqing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore, Singapore
| | - Daniel Multer
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Nana Shumiya
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Maksim Litskevich
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Elio Vescovo
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Timur K Kim
- Diamond Light Source, Didcot OX11 0DE, United Kingdom
| | - Cephise Cacho
- Diamond Light Source, Didcot OX11 0DE, United Kingdom
| | - Nan Yao
- Princeton Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, USA
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187 Dresden, Germany
| | - Titus Neupert
- Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland
| | - M Zahid Hasan
- Laboratory for Topological Quantum Matter and Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
- Princeton Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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49
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Ma Q, Grushin AG, Burch KS. Topology and geometry under the nonlinear electromagnetic spotlight. NATURE MATERIALS 2021; 20:1601-1614. [PMID: 34127824 DOI: 10.1038/s41563-021-00992-7] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 03/19/2021] [Indexed: 06/12/2023]
Abstract
For many materials, a precise knowledge of their dispersion spectra is insufficient to predict their ordered phases and physical responses. Instead, these materials are classified by the geometrical and topological properties of their wavefunctions. A key challenge is to identify and implement experiments that probe or control these quantum properties. In this Review, we describe recent progress in this direction, focusing on nonlinear electromagnetic responses that arise directly from quantum geometry and topology. We give an overview of the field by discussing theoretical ideas, experiments and the materials that drive them. We conclude by discussing how these techniques can be combined with device architectures to uncover, probe and ultimately control quantum phases with emergent topological and correlated properties.
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Affiliation(s)
- Qiong Ma
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Adolfo G Grushin
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Kenneth S Burch
- Department of Physics, Boston College, Chestnut Hill, MA, USA.
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50
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Cheng E, Xia W, Shi X, Fang H, Wang C, Xi C, Xu S, Peets DC, Wang L, Su H, Pi L, Ren W, Wang X, Yu N, Chen Y, Zhao W, Liu Z, Guo Y, Li S. Magnetism-induced topological transition in EuAs 3. Nat Commun 2021; 12:6970. [PMID: 34848690 PMCID: PMC8635340 DOI: 10.1038/s41467-021-26482-7] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2020] [Accepted: 09/28/2021] [Indexed: 11/09/2022] Open
Abstract
The nature of the interaction between magnetism and topology in magnetic topological semimetals remains mysterious, but may be expected to lead to a variety of novel physics. We systematically studied the magnetic semimetal EuAs3, demonstrating a magnetism-induced topological transition from a topological nodal-line semimetal in the paramagnetic or the spin-polarized state to a topological massive Dirac metal in the antiferromagnetic ground state at low temperature. The topological nature in the antiferromagnetic state and the spin-polarized state has been verified by electrical transport measurements. An unsaturated and extremely large magnetoresistance of ~2 × 105% at 1.8 K and 28.3 T is observed. In the paramagnetic states, the topological nodal-line structure at the Y point is proven by angle-resolved photoemission spectroscopy. Moreover, a temperature-induced Lifshitz transition accompanied by the emergence of a new band below 3 K is revealed. These results indicate that magnetic EuAs3 provides a rich platform to explore exotic physics arising from the interaction of magnetism with topology.
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Affiliation(s)
- Erjian Cheng
- State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University, 200433, Shanghai, China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, 201210, Shanghai, China
| | - Xianbiao Shi
- State Key Laboratory of Advanced Welding & Joining and Flexible Printed Electronics Technology Center, Harbin Institute of Technology, 518055, Shenzhen, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, 150001, Harbin, China
| | - Hongwei Fang
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Chengwei Wang
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Chuanying Xi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, 230031, Hefei, Anhui, China
| | - Shaowen Xu
- Department of Physics, Shanghai University, 200444, Shanghai, China
| | - Darren C Peets
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 315201, Ningbo, Zhejiang, China
- Institute for Solid State and Materials Physics, Technical University of Dresden, 01062, Dresden, Germany
| | - Linshu Wang
- State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University, 200433, Shanghai, China
| | - Hao Su
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
| | - Li Pi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, 230031, Hefei, Anhui, China
| | - Wei Ren
- Department of Physics, Shanghai University, 200444, Shanghai, China
| | - Xia Wang
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
| | - Na Yu
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
| | - Yulin Chen
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, 201210, Shanghai, China
- Department of Physics, University of Oxford, Oxford, OX1 3PU, UK
| | - Weiwei Zhao
- State Key Laboratory of Advanced Welding & Joining and Flexible Printed Electronics Technology Center, Harbin Institute of Technology, 518055, Shenzhen, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, 150001, Harbin, China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China.
- ShanghaiTech Laboratory for Topological Physics, 201210, Shanghai, China.
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China.
| | - Shiyan Li
- State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University, 200433, Shanghai, China.
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China.
- Shanghai Research Center for Quantum Sciences, 201315, Shanghai, China.
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