1
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Takada K, Ito M, Fukui N, Nishihara H. Modulation between capacitor and conductor for a redox-active 2D bis(terpyridine)cobalt(II) nanosheet via anion-exchange. Commun Chem 2024; 7:186. [PMID: 39174642 PMCID: PMC11341730 DOI: 10.1038/s42004-024-01274-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2024] [Accepted: 08/12/2024] [Indexed: 08/24/2024] Open
Abstract
Ionic polymers are intriguing materials whose functionality arises from the synergy between ionic polymer backbones and counterions. A key method for enhancing their functionality is the post-synthetic ion-exchange reaction, which is instrumental in improving the chemical and physical properties of polymer backbones and introducing of the functionalities of the counterions. Electronic interaction between host polymer backbone and guest ions plays pivotal roles in property modulation. The current study highlights the modulation of responses to external electric field in cationic bis(terpyridine)cobalt(II) polymer nanofilms through anion-exchange reactions. Initially, as-prepared chloride-containing polymers exhibited supercapacitor behaviour. Introducing anionic metalladithiolenes into the polymers altered the behaviour to either conductive or insulative, depending on the valence of the metalladithiolenes. This modulation was accomplished by fine tuning of charge-transfer interactions between the bis(terpyridine)cobalt(II) complex moieties and redox-active anions. Our findings open up new avenue for ionic polymers, showcasing their potential as versatile platform in materials science.
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Affiliation(s)
- Kenji Takada
- Research Institute for Science and Technology, Tokyo University of Science, 2641, Yamazaki, Noda, Chiba, 278-8510, Japan.
| | - Miyu Ito
- Faculty of Science and Technology, Tokyo University of Science, 2641, Yamazaki, Noda, Chiba, 278-8510, Japan
| | - Naoya Fukui
- Research Institute for Science and Technology, Tokyo University of Science, 2641, Yamazaki, Noda, Chiba, 278-8510, Japan
| | - Hiroshi Nishihara
- Research Institute for Science and Technology, Tokyo University of Science, 2641, Yamazaki, Noda, Chiba, 278-8510, Japan.
- Faculty of Science and Technology, Tokyo University of Science, 2641, Yamazaki, Noda, Chiba, 278-8510, Japan.
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2
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Hawkey A, Dash A, Rodríguez-Martínez X, Zhao Z, Champ A, Lindenthal S, Zharnikov M, Kemerink M, Zaumseil J. Ion-Exchange Doping of Semiconducting Single-Walled Carbon Nanotubes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404554. [PMID: 39104286 DOI: 10.1002/adma.202404554] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Revised: 07/04/2024] [Indexed: 08/07/2024]
Abstract
Semiconducting single-walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p- or n-doping. Understanding the impact of dopant counterions on charge transport and thermoelectric properties of nanotube networks is essential to further optimize doping methods and to develop better dopants. This work utilizes ion-exchange doping to systematically vary the size of counterions in thin films of small and large diameter, polymer-sorted semiconducting SWCNTs with AuCl3 as the initial p-dopant and investigates the impact of ion size on conductivity, Seebeck coefficients, and power factors. Larger anions are found to correlate with higher electrical conductivities and improved doping stability, while no significant effect on the power factors is found. Importantly, the effect of counterion size on the thermoelectric properties of dense SWCNT networks is not obscured by morphological changes upon doping. The observed trends of carrier mobilities and Seebeck coefficients can be explained by a random resistor model for the nanotube network that accounts for overlapping Coulomb potentials leading to the formation of an impurity band whose depth depends on the carrier density and counterion size. These insights can be applied more broadly to understand the thermoelectric properties of doped percolating disordered systems, including semiconducting polymers.
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Affiliation(s)
- Angus Hawkey
- Institute for Physical Chemistry, Heidelberg University, 69120, Heidelberg, Germany
| | - Aditya Dash
- Institute for Molecular Systems Engineering and Advanced Materials, Heidelberg University, Im Neuenheimer Feld 225, 69120, Heidelberg, Germany
| | | | - Zhiyong Zhao
- Institute for Physical Chemistry, Heidelberg University, 69120, Heidelberg, Germany
| | - Anna Champ
- Department of Chemistry, Columbia University, New York, New York, 10027, USA
| | - Sebastian Lindenthal
- Institute for Physical Chemistry, Heidelberg University, 69120, Heidelberg, Germany
| | - Michael Zharnikov
- Institute for Physical Chemistry, Heidelberg University, 69120, Heidelberg, Germany
| | - Martijn Kemerink
- Institute for Molecular Systems Engineering and Advanced Materials, Heidelberg University, Im Neuenheimer Feld 225, 69120, Heidelberg, Germany
| | - Jana Zaumseil
- Institute for Physical Chemistry, Heidelberg University, 69120, Heidelberg, Germany
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3
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Xu Y, Yan J, Zhou W, Ouyang J. Development of High Performance Thermoelectric Polymers via Doping or Dedoping Engineering. Chem Asian J 2024; 19:e202400329. [PMID: 38736306 DOI: 10.1002/asia.202400329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Revised: 05/11/2024] [Accepted: 05/12/2024] [Indexed: 05/14/2024]
Abstract
It is of great significance to develop high-performance thermoelectric (TE) materials, because they can be used to harvest waste heat into electricity and there is abundant waste heat on earth. The conventional TE materials are inorganic semimetals or semiconductors like Bi2Te3 and its derivatives. However, they have problems of high cost, scarce/toxic elements, high thermal conductivity, and poor mechanical flexibility. Organic TE materials emerged as the next-generation TE materials because of their merits including solution processability, low cost, abundant element, low intrinsic thermal conductivity, and high mechanical flexibility. Organic TE materials are mainly conducting polymers because of their high conductivity. Both the conductivity and Seebeck coefficient depend on the doping level, and they are interdependent. Hence, the TE properties of polymers can be improved through doping/dedoping engineering. There are three types of doping forms, oxidative (or reductive) doping, protonic acid doping, and charge transfer doping. Accordingly, they can be dedoped by different approaches. In this article, we review the methods to dope and dedope p-type and n-type TE polymers and the combination of doping and dedoping to optimize their TE properties. Secondary doping is also covered, since it can significantly enhance the conductivity of some TE polymers.
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Affiliation(s)
- Yichen Xu
- National University of Singapore (Suzhou) Research Institute, No. 377 Linquan Street, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, China
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, China
| | - Jin Yan
- National University of Singapore (Suzhou) Research Institute, No. 377 Linquan Street, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, China
| | - Wei Zhou
- National University of Singapore (Suzhou) Research Institute, No. 377 Linquan Street, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, China
| | - Jianyong Ouyang
- National University of Singapore (Suzhou) Research Institute, No. 377 Linquan Street, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, China
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, China
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4
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Lei C, Zhou T, Zhang M, Liu T, Xu C, Wang R, He X, Liang X. Universal Copolymerization of Crosslinked Polyether Electrolytes for All-Solid-State Lithium-Metal Batteries. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2405482. [PMID: 39073305 DOI: 10.1002/advs.202405482] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2024] [Revised: 07/14/2024] [Indexed: 07/30/2024]
Abstract
Solid polymer electrolytes (SPEs) are pivotal in advancing the practical implementation of all-solid-state batteries. Poly(1,3-dioxane) (PDOL)-based electrolytes have attracted significant attention due to the pseudo-high conductivity achieved through sophisticated in situ polymerization methods; however, such PDOL-based electrolytes present challenges of crystallization over time and monomers residual during processing. In this study, integrating LiTFSI and LiDFOB as a universal copolymerization strategy for developing high-performance PDOL electrolytes with a wide range of epoxy crosslinkers is proposed. It is discovered that this approach leverages the protective effects of TFSI anions on the boron active center and catalyzes polymer chain growth via crosslinking. The homogenously crosslinked (benzene-centered) PDOL electrolyte exhibits remarkable thermo-mechanical stability (up to 100 °C), high ion migration number (tLi+ = 0.42), a wide electrochemical window (≈5.0 V vs Li+/Li), and high ionic conductivity (4.5×10-4 S cm-1). Notably, the crosslinked PDOL electrolyte is in the all-solid-state with minimal monomer/oligomer residual, exhibiting no crystallization during relaxation, delivering a robust performance in all-solid-state lithium metal batteries.
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Affiliation(s)
- Chengjun Lei
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, Joint International Research Laboratory of Energy Electrochemistry, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Tiankun Zhou
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, Joint International Research Laboratory of Energy Electrochemistry, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Mingjie Zhang
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, Joint International Research Laboratory of Energy Electrochemistry, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Tingting Liu
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, Joint International Research Laboratory of Energy Electrochemistry, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Chen Xu
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, Joint International Research Laboratory of Energy Electrochemistry, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Rui Wang
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, Joint International Research Laboratory of Energy Electrochemistry, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Xin He
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, Joint International Research Laboratory of Energy Electrochemistry, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Xiao Liang
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, Joint International Research Laboratory of Energy Electrochemistry, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
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5
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Yu CP, Chowdhury R, Fu Y, Ghosh P, Zeng W, Mustafa TBE, Grüne J, Walker LE, Congrave DG, Chua XW, Murto P, Rao A, Sirringhaus H, Plasser F, Grey CP, Friend RH, Bronstein H. Near-infrared luminescent open-shell π-conjugated systems with a bright lowest-energy zwitterionic singlet excited state. SCIENCE ADVANCES 2024; 10:eado3476. [PMID: 39047089 PMCID: PMC11268402 DOI: 10.1126/sciadv.ado3476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 06/20/2024] [Indexed: 07/27/2024]
Abstract
Open-shell systems with extensive π-conjugation have fascinating properties due to their narrow bandgaps and spin interactions. In this work, we report neutral open-shell di- and polyradical conjugated materials exhibiting intriguing optical and magnetic properties. Our key design advance is the planarized geometry allowing for greater interaction between adjacent spins. This results in absorption and emission in the near infrared at 803 and 1050 nanometers, respectively, and we demonstrate a unique electronic structure where a bright zwitterionic excited state is the lowest-accessible electronic transition. Electron paramagnetic resonance spectroscopy and superconducting quantum interference device measurements reveal that our materials are open-shell singlets with different degrees of spin interactions, dynamics, and antiferromagnetic properties, which likely contributed to the formation of their emissive zwitterionic singlet excited state and near-infrared emission. In addition, our materials show reversible and stable electrochromic switching with more than 500 cycles, indicating their potential for optoelectronic and electrochemical energy storage applications.
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Affiliation(s)
- Craig P. Yu
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
| | - Rituparno Chowdhury
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
| | - Yao Fu
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
| | - Pratyush Ghosh
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
| | - Weixuan Zeng
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
| | - Tarig B. E. Mustafa
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
| | - Jeannine Grüne
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
| | - Lucy E. Walker
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
| | - Daniel G. Congrave
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
| | - Xian Wei Chua
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
| | - Petri Murto
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
| | - Akshay Rao
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
| | - Henning Sirringhaus
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
| | - Felix Plasser
- Department of Chemistry, Loughborough University, Loughborough, LE11 3TU, UK
| | - Clare P. Grey
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
| | - Richard H. Friend
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
| | - Hugo Bronstein
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK
- Department of Physics, Cavendish Laboratory, Cambridge University, Cambridge CB3 0HF, UK
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6
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Pan J, Wang J, Li K, Dai X, Li Q, Chong D, Chen B, Yan J, Wang H. Efficient molecular doping of polymeric semiconductors improved by coupled reaction. Nat Commun 2024; 15:5854. [PMID: 38997309 PMCID: PMC11245478 DOI: 10.1038/s41467-024-50293-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Accepted: 07/05/2024] [Indexed: 07/14/2024] Open
Abstract
Exploring chemical doping method to improve the electrical conductivity of polymers is still very attractive for researchers. In this work, we report a developed method of doping a polymer semiconductor aided by the coupled reaction that commonly exists in biological systems where a non-spontaneous reaction is driven by a spontaneous reaction. During the doping process, the chemical reaction between the dopant and the polymer is promoted by introducing a thermodynamically favorable reaction via adding additives that are highly reactive to the reduction product of the dopant to form a coupled reaction, thus significantly improving the electrical conductivity of polymers by 3-7 orders. This coupled reaction doping process shows the potential of wide applications in exploring efficient doping systems to prepare functional conducting polymers, which could be a powerful tool for modern organic electronics.
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Affiliation(s)
- Jiahao Pan
- State Key Laboratory of Multiphase Flow in Power Engineering & Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, China
| | - Jing Wang
- State Key Laboratory of Multiphase Flow in Power Engineering & Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Kuncai Li
- State Key Laboratory of Multiphase Flow in Power Engineering & Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, China
| | - Xu Dai
- State Key Laboratory of Multiphase Flow in Power Engineering & Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, China
| | - Qing Li
- College of Chemistry and Chemical Engineering, Dezhou University, Dezhou, Shandong, China
| | - Daotong Chong
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Bin Chen
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Junjie Yan
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Hong Wang
- State Key Laboratory of Multiphase Flow in Power Engineering & Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, China.
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, China.
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7
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Ariga K. Interface-Interactive Nanoarchitectonics: Solid and/or Liquid. Chemphyschem 2024:e202400596. [PMID: 38965042 DOI: 10.1002/cphc.202400596] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2024] [Revised: 07/03/2024] [Accepted: 07/04/2024] [Indexed: 07/06/2024]
Abstract
The methodology of nanoarchitectonics is to construct functional materials using nanounits such as atoms, molecules, and nanoobjects, just like architecting buildings. Nanoarchitectonics pursues the ultimate concept of materials science through the integration of related fields. In this review paper, under the title of interface-interactive nanoarchitectonics, several examples of structure fabrication and function development at interfaces will be discussed, highlighting the importance of architecting materials with nanoscale considerations. Two sections provide some examples at the solid and liquid surfaces. In solid interfacial environments, molecular structures can be precisely observed and analyzed with theoretical calculations. Solid surfaces are a prime site for nanoarchitectonics at the molecular level. Nanoarchitectonics of solid surfaces has the potential to pave the way for cutting-edge functionality and science based on advanced observation and analysis. Liquid surfaces are more kinetic and dynamic than solid interfaces, and their high fluidity offers many possibilities for structure fabrications by nanoarchitectonics. The latter feature has advantages in terms of freedom of interaction and diversity of components, therefore, liquid surfaces may be more suitable environments for the development of functionalities. The final section then discusses what is needed for the future of material creation in nanoarchitectonics.
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Affiliation(s)
- Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan
- Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwa-no-ha, Kashiwa, 277-8561, Japan
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8
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Ariga K. Liquid-Liquid and Liquid-Solid Interfacial Nanoarchitectonics. Molecules 2024; 29:3168. [PMID: 38999120 PMCID: PMC11243083 DOI: 10.3390/molecules29133168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/14/2024] [Revised: 07/01/2024] [Accepted: 07/02/2024] [Indexed: 07/14/2024] Open
Abstract
Nanoscale science is becoming increasingly important and prominent, and further development will necessitate integration with other material chemistries. In other words, it involves the construction of a methodology to build up materials based on nanoscale knowledge. This is also the beginning of the concept of post-nanotechnology. This role belongs to nanoarchitectonics, which has been rapidly developing in recent years. However, the scope of application of nanoarchitectonics is wide, and it is somewhat difficult to compile everything. Therefore, this review article will introduce the concepts of liquid and interface, which are the keywords for the organization of functional material systems in biological systems. The target interfaces are liquid-liquid interface, liquid-solid interface, and so on. Recent examples are summarized under the categories of molecular assembly, metal-organic framework and covalent organic framework, and living cell. In addition, the latest research on the liquid interfacial nanoarchitectonics of organic semiconductor film is also discussed. The final conclusive section summarizes these features and discusses the necessary components for the development of liquid interfacial nanoarchitectonics.
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Affiliation(s)
- Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Ibaraki 305-0044, Japan;
- Graduate School of Frontier Sciences, The University of Tokyo, Chiba 277-8561, Japan
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9
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Lee DY, Choi DE, Ahn Y, Kye H, Kim MS, Kim BG. Sequential Cascade Doping of Conjugated-Polymer-Wrapped Carbon Nanotubes for Highly Electrically Conductive Platforms. Polymers (Basel) 2024; 16:1884. [PMID: 39000739 PMCID: PMC11244060 DOI: 10.3390/polym16131884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/30/2024] [Revised: 06/25/2024] [Accepted: 06/29/2024] [Indexed: 07/17/2024] Open
Abstract
To explore a highly conductive flexible platform, this study develops PIDF-BT@SWCNT by wrapping single-walled carbon nanotubes (SWCNTs) with a conjugated polymer, PIDF-BT, known for its effective doping properties. By evaluating the doping behaviors of various dopants on PIDF-BT, appropriate dopant combinations for cascade doping are selected to improve the doping efficiency of PIDF-BT@SWCNT. Specifically, using F4TCNQ or F6TCNNQ as the first dopant, followed by AuCl3 as the second dopant, demonstrates remarkable doping efficiency, surpassing that of the individual dopants and yielding an exceptional electrical conductivity exceeding 6000 S/cm. Characterization using X-ray photoelectron spectroscopy and Raman spectroscopy elucidates the doping mechanism, revealing an increase in the proportion of electron-donating atoms and the ratio of quinoid structures upon F4TCNQ/AuCl3 cascade doping. These findings offer insights into optimizing dopant combinations for cascade doping, showcasing its advantages in enhancing doping efficiency and resulting electrical conductivity compared with single dopant processes.
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Affiliation(s)
- Da Young Lee
- Department of Materials Science and Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea;
| | - Da Eun Choi
- Department of Organic and Nano System Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea; (D.E.C.); (Y.A.); (H.K.); (M.S.K.)
| | - Yejin Ahn
- Department of Organic and Nano System Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea; (D.E.C.); (Y.A.); (H.K.); (M.S.K.)
| | - Hyojin Kye
- Department of Organic and Nano System Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea; (D.E.C.); (Y.A.); (H.K.); (M.S.K.)
| | - Min Seon Kim
- Department of Organic and Nano System Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea; (D.E.C.); (Y.A.); (H.K.); (M.S.K.)
| | - Bong-Gi Kim
- Department of Materials Science and Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea;
- Department of Organic and Nano System Engineering, Konkuk University, 120 Neungdong-ro, Seoul 05029, Republic of Korea; (D.E.C.); (Y.A.); (H.K.); (M.S.K.)
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10
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Zhu W, Qiu X, Laulainen JEM, Un HL, Ren X, Xiao M, Freychet G, Vacek P, Tjhe D, He Q, Wood W, Wang Z, Zhang Y, Qu Z, Asatryan J, Martin J, Heeney M, McNeill CR, Midgley PA, Jacobs IE, Sirringhaus H. Enhancing the Conductivity and Thermoelectric Performance of Semicrystalline Conducting Polymers through Controlled Tie Chain Incorporation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310480. [PMID: 38669281 DOI: 10.1002/adma.202310480] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 02/19/2024] [Indexed: 04/28/2024]
Abstract
Conjugated polymers are promising materials for thermoelectric applications, however, at present few effective and well-understood strategies exist to further advance their thermoelectric performance. Here a new model system is reported for a better understanding of the key factors governing their thermoelectric properties: aligned, ribbon-phase poly[2,5-bis(3-dodecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT) doped by ion-exchange doping. Using a range of microstructural and spectroscopic methods, the effect of controlled incorporation of tie-chains between the crystalline domains is studied through blending of high and low molecular weight chains. The tie chains provide efficient transport pathways between crystalline domains and lead to significantly enhanced electrical conductivity of 4810 S cm-1, which is not accompanied by a reduction in Seebeck coefficient or a large increase in thermal conductivity. Respectable power factors of 173 µW m-1 K-2 are demonstrated in this model system. The approach is generally applicable to a wide range of semicrystalline conjugated polymers and could provide an effective pathway for further enhancing their thermoelectric properties and overcome traditional trade-offs in optimization of thermoelectric performance.
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Affiliation(s)
- Wenjin Zhu
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Xinkai Qiu
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Joonatan E M Laulainen
- Department of Materials Science and Engineering, University of Cambridge, Cambridge, CB3 0FS, UK
| | - Hio-Leng Un
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Xinglong Ren
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Mingfei Xiao
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | | | - Petr Vacek
- Department of Materials Science and Engineering, University of Cambridge, Cambridge, CB3 0FS, UK
| | - Dion Tjhe
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Qiao He
- Department of Chemistry, Imperial College London, London, SW72AZ, UK
| | - William Wood
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Zichen Wang
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Youcheng Zhang
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Zhengkang Qu
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Jesika Asatryan
- Centro de Investigacións Tecnolóxicas (CIT), Campus Industrial de Ferrol, Universidade da Coruña, Esteiro, Ferrol, 15471, Spain
| | - Jaime Martin
- Centro de Investigacións Tecnolóxicas (CIT), Campus Industrial de Ferrol, Universidade da Coruña, Esteiro, Ferrol, 15471, Spain
- POLYMAT Paseo Manuel de Lardizabal 3, Donostia-San Sebastián, 20018, Spain
| | - Martin Heeney
- Department of Chemistry, Imperial College London, London, SW72AZ, UK
| | - Christopher R McNeill
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
| | - Paul A Midgley
- Department of Materials Science and Engineering, University of Cambridge, Cambridge, CB3 0FS, UK
| | - Ian E Jacobs
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Henning Sirringhaus
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
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11
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Xiong M, Deng XY, Tian SY, Liu KK, Fang YH, Wang JR, Wang Y, Liu G, Chen J, Villalva DR, Baran D, Gu X, Lei T. Counterion docking: a general approach to reducing energetic disorder in doped polymeric semiconductors. Nat Commun 2024; 15:4972. [PMID: 38862491 PMCID: PMC11166965 DOI: 10.1038/s41467-024-49208-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Accepted: 05/21/2024] [Indexed: 06/13/2024] Open
Abstract
Molecular doping plays an important role in controlling the carrier concentration of organic semiconductors. However, the introduction of dopant counterions often results in increased energetic disorder and traps due to the molecular packing disruption and Coulomb potential wells. To date, no general strategy has been proposed to reduce the counterion-induced structural and energetic disorder. Here, we demonstrate the critical role of non-covalent interactions (NCIs) between counterions and polymers. Employing a computer-aided approach, we identified the optimal counterions and discovered that NCIs determine their docking positions, which significantly affect the counterion-induced energetic disorder. With the optimal counterions, we successfully reduced the energetic disorder to levels even lower than that of the undoped polymer. As a result, we achieved a high n-doped electrical conductivity of over 200 S cm-1 and an eight-fold increase in the thermoelectric power factor. We found that the NCIs have substantial effects on doping efficiency, polymer backbone planarity, and Coulomb potential landscape. Our work not only provides a general strategy for identifying the most suitable counterions but also deepens our understanding of the counterion effects on doped polymeric semiconductors.
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Affiliation(s)
- Miao Xiong
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Xin-Yu Deng
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Shuang-Yan Tian
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Kai-Kai Liu
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Yu-Hui Fang
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Juan-Rong Wang
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Yunfei Wang
- School of Polymer Science and Engineering, Center for Optoelectronic Materials and Devices, The University of Southern Mississippi, Hattiesburg, MS, 39406, USA
| | - Guangchao Liu
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Jupeng Chen
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Diego Rosas Villalva
- Materials Science and Engineering Program (MSE), Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Derya Baran
- Materials Science and Engineering Program (MSE), Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xiaodan Gu
- School of Polymer Science and Engineering, Center for Optoelectronic Materials and Devices, The University of Southern Mississippi, Hattiesburg, MS, 39406, USA
| | - Ting Lei
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, China.
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12
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Jin W, Yang CY, Pau R, Wang Q, Tekelenburg EK, Wu HY, Wu Z, Jeong SY, Pitzalis F, Liu T, He Q, Li Q, Huang JD, Kroon R, Heeney M, Woo HY, Mura A, Motta A, Facchetti A, Fahlman M, Loi MA, Fabiano S. Photocatalytic doping of organic semiconductors. Nature 2024; 630:96-101. [PMID: 38750361 PMCID: PMC11153156 DOI: 10.1038/s41586-024-07400-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Accepted: 04/09/2024] [Indexed: 06/07/2024]
Abstract
Chemical doping is an important approach to manipulating charge-carrier concentration and transport in organic semiconductors (OSCs)1-3 and ultimately enhances device performance4-7. However, conventional doping strategies often rely on the use of highly reactive (strong) dopants8-10, which are consumed during the doping process. Achieving efficient doping with weak and/or widely accessible dopants under mild conditions remains a considerable challenge. Here, we report a previously undescribed concept for the photocatalytic doping of OSCs that uses air as a weak oxidant (p-dopant) and operates at room temperature. This is a general approach that can be applied to various OSCs and photocatalysts, yielding electrical conductivities that exceed 3,000 S cm-1. We also demonstrate the successful photocatalytic reduction (n-doping) and simultaneous p-doping and n-doping of OSCs in which the organic salt used to maintain charge neutrality is the only chemical consumed. Our photocatalytic doping method offers great potential for advancing OSC doping and developing next-generation organic electronic devices.
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Affiliation(s)
- Wenlong Jin
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden
| | - Chi-Yuan Yang
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden.
- n-Ink AB, Norrköping, Sweden.
| | - Riccardo Pau
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, Italy
| | - Qingqing Wang
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden
- n-Ink AB, Norrköping, Sweden
| | - Eelco K Tekelenburg
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
| | - Han-Yan Wu
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden
| | - Ziang Wu
- Department of Chemistry, College of Science, Korea University, Seoul, Republic of Korea
| | - Sang Young Jeong
- Department of Chemistry, College of Science, Korea University, Seoul, Republic of Korea
| | - Federico Pitzalis
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, Italy
| | - Tiefeng Liu
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden
- Wallenberg Initiative Materials Science for Sustainability, Department of Science and Technology, Linköping University, Norrköping, Sweden
| | - Qiao He
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, UK
| | - Qifan Li
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden
| | - Jun-Da Huang
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden
| | - Renee Kroon
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, UK
| | - Han Young Woo
- Department of Chemistry, College of Science, Korea University, Seoul, Republic of Korea
| | - Andrea Mura
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, Italy
| | - Alessandro Motta
- Dipartimento di Scienze Chimiche, Università di Roma "La Sapienza" and INSTM, UdR Roma, Rome, Italy
| | - Antonio Facchetti
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA
| | - Mats Fahlman
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden
| | - Maria Antonietta Loi
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
| | - Simone Fabiano
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden.
- n-Ink AB, Norrköping, Sweden.
- Wallenberg Initiative Materials Science for Sustainability, Department of Science and Technology, Linköping University, Norrköping, Sweden.
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13
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Wang S, Zhu W, Jacobs IE, Wood WA, Wang Z, Manikandan S, Andreasen JW, Un HI, Ursel S, Peralta S, Guan S, Grivel JC, Longuemart S, Sirringhaus H. Enhancing the Thermoelectric Properties of Conjugated Polymers by Suppressing Dopant-Induced Disorder. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2314062. [PMID: 38558210 DOI: 10.1002/adma.202314062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2023] [Revised: 03/17/2024] [Indexed: 04/04/2024]
Abstract
Doping is a crucial strategy to enhance the performance of various organic electronic devices. However, in many cases, the random distribution of dopants in conjugated polymers leads to the disruption of the polymer microstructure, severely constraining the achievable performance of electronic devices. Here, it is shown that by ion-exchange doping polythiophene-based P[(3HT)1-x-stat-(T)x] (x = 0 (P1), 0.12 (P2), 0.24 (P3), and 0.36 (P4)), remarkably high electrical conductivity of >400 S cm-1 and power factor of >16 µW m-1 K-2 are achieved for the random copolymer P3, ranking it among highest ever reported for unaligned P3HT-based films, significantly higher than that of P1 (<40 S cm-1, <4 µW m-1 K-2). Although both polymers exhibit comparable field-effect transistor hole mobilities of ≈0.1 cm2 V-1 s-1 in the pristine state, after doping, Hall effect measurements indicate that P3 exhibits a large Hall mobility up to 1.2 cm2 V-1 s-1, significantly outperforming that of P1 (0.06 cm2 V-1 s-1). GIWAXS measurement determines that the in-plane π-π stacking distance of doped P3 is 3.44 Å, distinctly shorter than that of doped P1 (3.68 Å). These findings contribute to resolving the long-standing dopant-induced-disorder issues in P3HT and serve as an example for achieving fast charge transport in highly doped polymers for efficient electronics.
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Affiliation(s)
- Suhao Wang
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
- Unité de Dynamique et Structure des Matériaux Moléculaires, Université du Littoral Côte d'Opale, 145 Avenue Maurice Schumann, Dunkerque, 59140, France
| | - Wenjin Zhu
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Ian E Jacobs
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - William A Wood
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Zichen Wang
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Suraj Manikandan
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Jens Wenzel Andreasen
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Hio-Ieng Un
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Sarah Ursel
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Sébastien Peralta
- Laboratoire de Physicochimie des Polymères et des Interfaces, CY Cergy Paris Université, 5 Mail Gay Lussac, Neuville-sur-Oise, 95000, France
| | - Shaoliang Guan
- Maxwell Centre, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Jean-Claude Grivel
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Stéphane Longuemart
- Unité de Dynamique et Structure des Matériaux Moléculaires, Université du Littoral Côte d'Opale, 145 Avenue Maurice Schumann, Dunkerque, 59140, France
| | - Henning Sirringhaus
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
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14
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Zhang W, Chen L, Niu R, Ma Z, Ba K, Xie T, Chu X, Wu S, Wang D, Liu G. Transient-State Self-Bipolarized Organic Frameworks of Single Aromatic Units for Natural Sunlight-Driven Photosynthesis of H 2O 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308322. [PMID: 38493490 PMCID: PMC11200023 DOI: 10.1002/advs.202308322] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Revised: 01/07/2024] [Indexed: 03/19/2024]
Abstract
Constructing π-conjugated polymer structures through covalent bonds dominates the design of organic framework photocatalysts, which significantly depends on the selection of multiple donor-acceptor building blocks to narrow the optical gap and increase the lifetimes of charge carriers. In this work, self-bipolarized organic frameworks of single aromatic units are demonstrated as novel broad-spectrum-responsive photocatalysts for H2O2 production. The preparation of such photocatalysts is only to fix the aromatic units (such as 1,3,5-triphenylbenzene) with alkane linkers in 3D space. Self-bipolarized aromatic units can drive the H2O2 production from H2O and O2 under natural sunlight, wide pH ranges (3.0-10.0) and natural water sources. Moreover, it can be extended to catalyze the oxidative coupling of amines. Experimental and theoretical investigation demonstrate that such a strategy obeys the mechanism of through-space π-conjugation, where the closely face-to-face overlapped aromatic rings permit the electron and energy transfer through the large-area delocalization of the electron cloud under visible light irradiation. This work introduces a novel design concept for the development of organic photocatalysts, which will break the restriction of conventional through-band π-conjugation structure and will open a new way in the synthesis of organic photocatalysts.
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Affiliation(s)
- Wenjuan Zhang
- State Key Laboratory of Inorganic Synthesis and Preparative ChemistryCollege of ChemistryJilin UniversityChangchun130012China
- Key Laboratory of Surface and Interface Chemistry of Jilin ProvinceCollege of ChemistryJilin UniversityChangchun130012China
| | - Lizheng Chen
- State Key Laboratory of Inorganic Synthesis and Preparative ChemistryCollege of ChemistryJilin UniversityChangchun130012China
- Key Laboratory of Surface and Interface Chemistry of Jilin ProvinceCollege of ChemistryJilin UniversityChangchun130012China
| | - Ruping Niu
- State Key Laboratory of Inorganic Synthesis and Preparative ChemistryCollege of ChemistryJilin UniversityChangchun130012China
- Key Laboratory of Surface and Interface Chemistry of Jilin ProvinceCollege of ChemistryJilin UniversityChangchun130012China
| | - Zhuoyuan Ma
- State Key Laboratory of Inorganic Synthesis and Preparative ChemistryCollege of ChemistryJilin UniversityChangchun130012China
| | - Kaikai Ba
- Key Laboratory of Surface and Interface Chemistry of Jilin ProvinceCollege of ChemistryJilin UniversityChangchun130012China
| | - Tengfeng Xie
- Key Laboratory of Surface and Interface Chemistry of Jilin ProvinceCollege of ChemistryJilin UniversityChangchun130012China
| | - Xuefeng Chu
- Jilin Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy SavingSchool of Electrical and Electronic Information EngineeringJilin Jianzhu UniversityChangchun130119China
| | - Shujie Wu
- Key Laboratory of Surface and Interface Chemistry of Jilin ProvinceCollege of ChemistryJilin UniversityChangchun130012China
| | - Dayang Wang
- State Key Laboratory of Inorganic Synthesis and Preparative ChemistryCollege of ChemistryJilin UniversityChangchun130012China
| | - Gang Liu
- State Key Laboratory of Inorganic Synthesis and Preparative ChemistryCollege of ChemistryJilin UniversityChangchun130012China
- Key Laboratory of Surface and Interface Chemistry of Jilin ProvinceCollege of ChemistryJilin UniversityChangchun130012China
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15
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Song HW, Moon D, Won Y, Cha YK, Yoo J, Park TH, Oh JH. A pattern recognition artificial olfactory system based on human olfactory receptors and organic synaptic devices. SCIENCE ADVANCES 2024; 10:eadl2882. [PMID: 38781346 PMCID: PMC11114221 DOI: 10.1126/sciadv.adl2882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2023] [Accepted: 04/18/2024] [Indexed: 05/25/2024]
Abstract
Neuromorphic sensors, designed to emulate natural sensory systems, hold the promise of revolutionizing data extraction by facilitating rapid and energy-efficient analysis of extensive datasets. However, a challenge lies in accurately distinguishing specific analytes within mixtures of chemically similar compounds using existing neuromorphic chemical sensors. In this study, we present an artificial olfactory system (AOS), developed through the integration of human olfactory receptors (hORs) and artificial synapses. This AOS is engineered by interfacing an hOR-functionalized extended gate with an organic synaptic device. The AOS generates distinct patterns for odorants and mixtures thereof, at the molecular chain length level, attributed to specific hOR-odorant binding affinities. This approach enables precise pattern recognition via training and inference simulations. These findings establish a foundation for the development of high-performance sensor platforms and artificial sensory systems, which are ideal for applications in wearable and implantable devices.
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Affiliation(s)
- Hyun Woo Song
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Dongseok Moon
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Yousang Won
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Yeon Kyung Cha
- Interdisciplinary Program in Bioengineering, Seoul National University, Seoul 08826, Republic of Korea
- Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Jin Yoo
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Tai Hyun Park
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Interdisciplinary Program in Bioengineering, Seoul National University, Seoul 08826, Republic of Korea
- Department of Nutritional Science and Food Management, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Joon Hak Oh
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
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16
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Guo J, Chen PA, Yang S, Wei H, Liu Y, Xia J, Chen C, Chen H, Wang S, Li W, Hu Y. Dopant-induced Morphology of Organic Semiconductors Resulting in High Doping Performance. SMALL METHODS 2024:e2400084. [PMID: 38738733 DOI: 10.1002/smtd.202400084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2024] [Revised: 04/21/2024] [Indexed: 05/14/2024]
Abstract
Doping plays a crucial role in modulating and enhancing the performance of organic semiconductor (OSC) devices. In this study, the critical role of dopants is underscored in shaping the morphology and structure of OSC films, which in turn profoundly influences their properties. Two dopants, trityl tetrakis(pentafluorophenyl) (TrTPFB) and N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate (DMA-TPFB), are examined for their doping effects on poly(3-hexylthiophene) (P3HT) and PBBT-2T host OSCs. It is found that although TrTPFB exhibits higher doping efficiency, OSCs doped with DMA-TPFB achieve comparable or even enhanced electrical conductivity. Indeed, the electrical conductivity of DMA-TPFB-doped P3HT reaches over 67 S cm-1, which is a record-high value for mixed-solution-doped P3HT. This can be attributed to DMA-TPFB inducing a higher degree of crystallinity and reduced structural disorder. Moreover, the beneficial impact of DMA-TPFB on the OSC films' morphology and structure results in superior thermoelectric performance in the doped OSCs. These findings highlight the significance of dopant-induced morphological and structural considerations in enhancing the film characteristics of OSCs, opening up a new avenue for optimization of dopant performance.
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Affiliation(s)
- Jing Guo
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan, 031000, China
| | - Ping-An Chen
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Shuzhang Yang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Huan Wei
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yu Liu
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiangnan Xia
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Chen Chen
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Huajie Chen
- Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan, 411105, China
| | - Suhao Wang
- Unité de Dynamique et Structure des Matériaux Moléculaires (UDSMM), Université du Littoral Côte d'Opale, 145 Avenue Maurice Schumann, Dunkerque, 59140, France
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
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17
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Trainer D, Lee AT, Sarkar S, Singh V, Cheng X, Dandu NK, Latt KZ, Wang S, Ajayi TM, Premarathna S, Facemyer D, Curtiss LA, Ulloa SE, Ngo AT, Masson E, Hla SW. 2D Ionic Liquid-Like State of Charged Rare-Earth Clusters on a Metal Surface. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308813. [PMID: 38268161 PMCID: PMC10987101 DOI: 10.1002/advs.202308813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Revised: 12/16/2023] [Indexed: 01/26/2024]
Abstract
Rare-earth complexes are vital for separation chemistry and useful in many advanced applications including emission and energy upconversion. Here, 2D rare-earth clusters having net charges are formed on a metal surface, enabling investigations of their structural and electronic properties on a one-cluster-at-a-time basis using scanning tunneling microscopy. While these ionic complexes are highly mobile on the surface at ≈100 K, their mobility is greatly reduced at 5 K and reveals stable and self-limiting clusters. In each cluster, a pair of charged rare-earth complexes formed by electrostatic and dispersive interactions act as a basic unit, and the clusters are chiral. Unlike other non-ionic molecular clusters formed on the surfaces, these rare-earth clusters show mechanical stability. Moreover, their high mobility on the surface suggests that they are in a 2D liquid-like state.
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Affiliation(s)
- Daniel Trainer
- Nanoscience and Technology DivisionArgonne National laboratoryLemontIL60439USA
| | - Alex Taekyung Lee
- Chemical Engineering DepartmentUniversity of Illinois at ChicagoChicagoIL60608USA
- Materials Science DivisionArgonne National laboratoryLemontIL60439USA
| | - Sanjoy Sarkar
- Nanoscale and Quantum Phenomena Instituteand Department of Physics and AstronomyOhio UniversityAthensOH45701USA
| | - Vijay Singh
- Chemical Engineering DepartmentUniversity of Illinois at ChicagoChicagoIL60608USA
- Materials Science DivisionArgonne National laboratoryLemontIL60439USA
- Present address:
Department of PhysicsGITAM School of ScienceBengaluruKarnataka561203India
| | - Xinyue Cheng
- Department of Chemistry and BiochemistryOhio UniversityAthensOH45701USA
| | - Naveen K. Dandu
- Chemical Engineering DepartmentUniversity of Illinois at ChicagoChicagoIL60608USA
- Materials Science DivisionArgonne National laboratoryLemontIL60439USA
| | - Kyaw Zin Latt
- Nanoscience and Technology DivisionArgonne National laboratoryLemontIL60439USA
| | - Shaoze Wang
- Nanoscience and Technology DivisionArgonne National laboratoryLemontIL60439USA
- Nanoscale and Quantum Phenomena Instituteand Department of Physics and AstronomyOhio UniversityAthensOH45701USA
| | - Tolulope Michael Ajayi
- Nanoscience and Technology DivisionArgonne National laboratoryLemontIL60439USA
- Nanoscale and Quantum Phenomena Instituteand Department of Physics and AstronomyOhio UniversityAthensOH45701USA
| | - Sineth Premarathna
- Nanoscience and Technology DivisionArgonne National laboratoryLemontIL60439USA
- Nanoscale and Quantum Phenomena Instituteand Department of Physics and AstronomyOhio UniversityAthensOH45701USA
| | - David Facemyer
- Nanoscale and Quantum Phenomena Instituteand Department of Physics and AstronomyOhio UniversityAthensOH45701USA
| | - Larry A. Curtiss
- Materials Science DivisionArgonne National laboratoryLemontIL60439USA
| | - Sergio E. Ulloa
- Nanoscale and Quantum Phenomena Instituteand Department of Physics and AstronomyOhio UniversityAthensOH45701USA
| | - Anh T. Ngo
- Chemical Engineering DepartmentUniversity of Illinois at ChicagoChicagoIL60608USA
- Materials Science DivisionArgonne National laboratoryLemontIL60439USA
| | - Eric Masson
- Department of Chemistry and BiochemistryOhio UniversityAthensOH45701USA
| | - Saw Wai Hla
- Nanoscience and Technology DivisionArgonne National laboratoryLemontIL60439USA
- Nanoscale and Quantum Phenomena Instituteand Department of Physics and AstronomyOhio UniversityAthensOH45701USA
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18
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Paulino PHS, Guimarães L, Nascimento CS. Chemical modification and doping of poly(p-phenylenes): A theoretical study. J Mol Model 2024; 30:114. [PMID: 38558272 DOI: 10.1007/s00894-024-05920-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 03/27/2024] [Indexed: 04/04/2024]
Abstract
CONTEXT Conjugated polymers (CPs) have been recognized as promising materials for the manufacture of electronic devices. However, further studies are still needed to enhance the electrical conductivity of these type of organic materials. The two main strategies for achieving this improvement are the doping process and chemical modification of the polymer chain. Therefore, in this article, we conduct a theoretical investigation, employing DFT calculations to evaluate the structural, energetic, and electronic properties of pristine and push-pull-derived poly(p-phenylene) oligomers (PPPs), as well as the analysis at the molecular level of the polymer doping process. As a primary conclusion, we determined that the PPP oligomer substituted with the push-pull group 4-EtN/CNPhNO2 exhibited the smallest HOMO-LUMO gap (Eg) among the studied oligomers. Moreover, we observed that the doping process, whether through electron removal or the introduction of the dopant anion ClO4-, led to a substantial reduction in the Eg of the PPP, indicating an enhancement in the polymer's electrical conductivity. METHODS DFT calculations were conducted using the PBE0 functional along with the Pople's split valence 6-31G(d,p) basis set, which includes polarization functions on all atoms (B97D/6-31G(d,p)).
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Affiliation(s)
- Paulo Henrique S Paulino
- Grupo de Pesquisa Em Química Computacional Aplicada (GPQCA), Departamento de Ciências Naturais (DCNAT), Universidade Federal de São João Del-Rei (UFSJ), Campus Dom BoscoSão João Del Rei, Minas Gerais, 36301-160, Brazil
| | - Luciana Guimarães
- Grupo de Pesquisa Em Química Computacional Aplicada (GPQCA), Departamento de Ciências Naturais (DCNAT), Universidade Federal de São João Del-Rei (UFSJ), Campus Dom BoscoSão João Del Rei, Minas Gerais, 36301-160, Brazil
| | - Clebio S Nascimento
- Grupo de Pesquisa Em Química Computacional Aplicada (GPQCA), Departamento de Ciências Naturais (DCNAT), Universidade Federal de São João Del-Rei (UFSJ), Campus Dom BoscoSão João Del Rei, Minas Gerais, 36301-160, Brazil.
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19
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Park J, Jang JG, Kang K, Kim SH, Kwak J. High Thermoelectric Performance in Solution-Processed Semicrystalline PEDOT:PSS Films by Strong Acid-Base Treatment: Limitations and Potential. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308368. [PMID: 38236169 PMCID: PMC10933597 DOI: 10.1002/advs.202308368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 01/06/2024] [Indexed: 01/19/2024]
Abstract
Thermoelectric (TE) generation with solution-processable conducting polymers offers substantial potential in low-temperature energy harvesting based on high tunability in materials, processes, and form-factors. However, manipulating the TE and charge transport properties accompanies structural and energetic disorders, restricting the enhancement of thermoelectric power factor (PF). Here, solution-based strong acid-base treatment techniques are introduced to modulate the doping level of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films with preserving its molecular orientation, enabling to achieve a remarkably high PF of 534.5 µW m-1 K-2 . Interestingly, theoretical modeling suggested that further de-doping can increase the PF beyond the experimental value. However, it is impossible to reach this value experimentally, even without any degradation of PEDOT crystallinity. Uncovering the underlying reason for the limitation, an analysis of the relationship among the microstructure-thermoelectric performance-charge transport property revealed that inter-domain connectivity via tie-chains and the resultant percolation for transport are crucial factors in achieving high TE performance, as in charge transport. It is believed that the methods and fundamental understandings in this work would contribute to the exploitation of conducting polymer-based low-temperature energy harvesting.
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Affiliation(s)
- Juhyung Park
- Department of Electrical and Computer EngineeringInter‐University Semiconductor Research CenterSoft Foundry InstituteSeoul National UniversitySeoul08826Republic of Korea
| | - Jae Gyu Jang
- Department of Carbon Convergence EngineeringWonkwang UniversityIksan54538Republic of Korea
| | - Keehoon Kang
- Department of Materials Science and EngineeringResearch Institute of Advanced MaterialsInstitute of Applied PhysicsSeoul National UniversitySeoul08826Republic of Korea
| | - Sung Hyun Kim
- Department of Carbon Convergence EngineeringWonkwang UniversityIksan54538Republic of Korea
| | - Jeonghun Kwak
- Department of Electrical and Computer EngineeringInter‐University Semiconductor Research CenterSoft Foundry InstituteSeoul National UniversitySeoul08826Republic of Korea
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20
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Paleti SHK, Kim Y, Kimpel J, Craighero M, Haraguchi S, Müller C. Impact of doping on the mechanical properties of conjugated polymers. Chem Soc Rev 2024; 53:1702-1729. [PMID: 38265833 PMCID: PMC10876084 DOI: 10.1039/d3cs00833a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Indexed: 01/25/2024]
Abstract
Conjugated polymers exhibit a unique portfolio of electrical and electrochemical behavior, which - paired with the mechanical properties that are typical for macromolecules - make them intriguing candidates for a wide range of application areas from wearable electronics to bioelectronics. However, the degree of oxidation or reduction of the polymer can strongly impact the mechanical response and thus must be considered when designing flexible or stretchable devices. This tutorial review first explores how the chain architecture, processing as well as the resulting nano- and microstructure impact the rheological and mechanical properties. In addition, different methods for the mechanical characterization of thin films and bulk materials such as fibers are summarized. Then, the review discusses how chemical and electrochemical doping alter the mechanical properties in terms of stiffness and ductility. Finally, the mechanical response of (doped) conjugated polymers is discussed in the context of (1) organic photovoltaics, representing thin-film devices with a relatively low charge-carrier density, (2) organic thermoelectrics, where chemical doping is used to realize thin films or bulk materials with a high doping level, and (3) organic electrochemical transistors, where electrochemical doping allows high charge-carrier densities to be reached, albeit accompanied by significant swelling. In the future, chemical and electrochemical doping may not only allow modulation and optimization of the electrical and electrochemical behavior of conjugated polymers, but also facilitate the design of materials with a tunable mechanical response.
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Affiliation(s)
- Sri Harish Kumar Paleti
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Youngseok Kim
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Joost Kimpel
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Mariavittoria Craighero
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Shuichi Haraguchi
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Christian Müller
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, Sweden
- Wallenberg Wood Science Center, Chalmers University of Technology, 41296 Göteborg, Sweden.
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21
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Ariga K. Confined Space Nanoarchitectonics for Dynamic Functions and Molecular Machines. MICROMACHINES 2024; 15:282. [PMID: 38399010 PMCID: PMC10892885 DOI: 10.3390/mi15020282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Revised: 02/07/2024] [Accepted: 02/15/2024] [Indexed: 02/25/2024]
Abstract
Nanotechnology has advanced the techniques for elucidating phenomena at the atomic, molecular, and nano-level. As a post nanotechnology concept, nanoarchitectonics has emerged to create functional materials from unit structures. Consider the material function when nanoarchitectonics enables the design of materials whose internal structure is controlled at the nanometer level. Material function is determined by two elements. These are the functional unit that forms the core of the function and the environment (matrix) that surrounds it. This review paper discusses the nanoarchitectonics of confined space, which is a field for controlling functional materials and molecular machines. The first few sections introduce some of the various dynamic functions in confined spaces, considering molecular space, materials space, and biospace. In the latter two sections, examples of research on the behavior of molecular machines, such as molecular motors, in confined spaces are discussed. In particular, surface space and internal nanospace are taken up as typical examples of confined space. What these examples show is that not only the central functional unit, but also the surrounding spatial configuration is necessary for higher functional expression. Nanoarchitectonics will play important roles in the architecture of such a total system.
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Affiliation(s)
- Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan;
- Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Japan
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22
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Ariga K. 2D Materials Nanoarchitectonics for 3D Structures/Functions. MATERIALS (BASEL, SWITZERLAND) 2024; 17:936. [PMID: 38399187 PMCID: PMC10890396 DOI: 10.3390/ma17040936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2024] [Revised: 02/09/2024] [Accepted: 02/09/2024] [Indexed: 02/25/2024]
Abstract
It has become clear that superior material functions are derived from precisely controlled nanostructures. This has been greatly accelerated by the development of nanotechnology. The next step is to assemble materials with knowledge of their nano-level structures. This task is assigned to the post-nanotechnology concept of nanoarchitectonics. However, nanoarchitectonics, which creates intricate three-dimensional functional structures, is not always easy. Two-dimensional nanoarchitectonics based on reactions and arrangements at the surface may be an easier target to tackle. A better methodology would be to define a two-dimensional structure and then develop it into a three-dimensional structure and function. According to these backgrounds, this review paper is organized as follows. The introduction is followed by a summary of the three issues; (i) 2D to 3D dynamic structure control: liquid crystal commanded by the surface, (ii) 2D to 3D rational construction: a metal-organic framework (MOF) and a covalent organic framework (COF); (iii) 2D to 3D functional amplification: cells regulated by the surface. In addition, this review summarizes the important aspects of the ultimate three-dimensional nanoarchitectonics as a perspective. The goal of this paper is to establish an integrated concept of functional material creation by reconsidering various reported cases from the viewpoint of nanoarchitectonics, where nanoarchitectonics can be regarded as a method for everything in materials science.
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Affiliation(s)
- Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Ibaraki, Japan;
- Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Chiba, Japan
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23
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Xu C, Wang D. Theoretical Perspective of Enhancing Order in n-Doped Thermoelectric Polymers through Side Chain Engineering: The Interplay of Counterion-Backbone Interaction and Side Chain Steric Hindrance. NANO LETTERS 2024; 24:1776-1783. [PMID: 38284760 DOI: 10.1021/acs.nanolett.3c04829] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
Donor-acceptor (D-A) copolymers doped with n-type dopants are widely sought after for their potential in organic thermoelectric devices. However, the existing structural disorder significantly hampers their charge transport and thermoelectric performance. In this Letter, we propose a mechanism to mitigate this disorder through side chain engineering. Utilizing molecular dynamics simulations, we demonstrate that strong Coulomb interactions between counterions and charged polymer backbones induce a transition in the stacking arrangement of the polymer backbones from a slipped to a vertical configuration. However, the presence of side chain steric hindrance impedes the formation of closely packed and ordered vertical stacking arrangements, resulting in greater distances between adjacent backbones and a higher level of structural disorder in the doped films. Therefore, we propose minimizing side chain steric hindrance to enhance the structural order in doped films. Our findings provide essential insights for advancing high-performance thermoelectric polymers.
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Affiliation(s)
- Chunlin Xu
- Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing 100084, People's Republic of China
- MOE Key Laboratory of Organic OptoElectronics and Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing 100084, People's Republic of China
| | - Dong Wang
- Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing 100084, People's Republic of China
- MOE Key Laboratory of Organic OptoElectronics and Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing 100084, People's Republic of China
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24
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Dong CD, Bauch F, Hu Y, Schumacher S. Charge transfer in superbase n-type doping of PCBM induced by deprotonation. Phys Chem Chem Phys 2024; 26:4194-4199. [PMID: 38230526 DOI: 10.1039/d3cp05105f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
N-type electronic doping of organic semiconductors (OSCs) by using superbase compounds shows high doping efficiency (H. Wei, Z. Cheng, T. Wu, Y. Liu, J. Guo, P.-A. Chen, J. Xia, H. Xie, X. Qiu, T. Liu, B. Zhang, J. Hui, Z. Zeng, Y. Bai and Y. Hu, Adv. Mater. 2023, 35, 2300084). While a deprotonation reaction is believed to trigger the doping process, the detailed mechanism therein is not yet fully understood. In the present work we theoretically study the electronic structure of the deprotonated Phenyl-C61-butyric acid methyl ester (PCBM) molecule, as well as the charge transfer (CT) between PCBM and its deprotonated species. We find that deprotonated PCBM without formation of a new bond between the deprotonated side chain and fullerene induces electronic structure with broken spin symmetry, where an in-gap state is singly occupied by an unpaired electron. A second scenario that we find to be possible is the formation of a new bond between the deprotonated side chain and a fullerene. This leads to a spin symmetric electronic structure with partially localized in-gap state, which is expected to contribute less to the effective doping. These results show that the deprotonated PCBM species without new bond formation predominantly accounts for the effective n-type doping of PCBM, an insight that will be useful for optimization of this recently discovered doping method.
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Affiliation(s)
- Chuan-Ding Dong
- Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), Paderborn University, Warburger Strasse 100, Paderborn 33098, Germany.
| | - Fabian Bauch
- Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), Paderborn University, Warburger Strasse 100, Paderborn 33098, Germany.
| | - Yuanyuan Hu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Stefan Schumacher
- Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), Paderborn University, Warburger Strasse 100, Paderborn 33098, Germany.
- Wyant College of Optical Sciences, University of Arizona, Tucson, AZ 85721, USA
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25
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Huang Y, Wu K, Sun Y, Hu Y, Wang Z, Yuan L, Wang S, Ji D, Zhang X, Dong H, Gong Z, Li Z, Weng X, Huang R, Cui Y, Chen X, Li L, Hu W. Unraveling the crucial role of trace oxygen in organic semiconductors. Nat Commun 2024; 15:626. [PMID: 38245526 PMCID: PMC10799851 DOI: 10.1038/s41467-024-44897-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2023] [Accepted: 01/09/2024] [Indexed: 01/22/2024] Open
Abstract
Optoelectronic properties of semiconductors are significantly modified by impurities at trace level. Oxygen, a prevalent impurity in organic semiconductors (OSCs), has long been considered charge-carrier traps, leading to mobility degradation and stability problems. However, this understanding relies on the conventional deoxygenation methods, by which oxygen residues in OSCs are inevitable. It implies that the current understanding is questionable. Here, we develop a non-destructive deoxygenation method (i.e., de-doping) for OSCs by a soft plasma treatment, and thus reveal that trace oxygen significantly pre-empties the donor-like traps in OSCs, which is the origin of p-type characteristics exhibited by the majority of these materials. This insight is completely opposite to the previously reported carrier trapping and can clarify some previously unexplained organic electronics phenomena. Furthermore, the de-doping results in the disappearance of p-type behaviors and significant increase of n-type properties, while re-doping (under light irradiation in O2) can controllably reverse the process. Benefiting from this, the key electronic characteristics (e.g., polarity, conductivity, threshold voltage, and mobility) can be precisely modulated in a nondestructive way, expanding the explorable property space for all known OSC materials.
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Affiliation(s)
- Yinan Huang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, Fujian, 350207, China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China
| | - Kunjie Wu
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China
| | - Yajing Sun
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China
| | - Yongxu Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China
| | - Zhongwu Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China
| | - Liqian Yuan
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China
| | - Shuguang Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China
| | - Xiaotao Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China
| | - Huanli Dong
- National Research Center for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhongmiao Gong
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China
| | - Zhiyun Li
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China
| | - Xuefei Weng
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China
| | - Rong Huang
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China
| | - Yi Cui
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China
| | - Xiaosong Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China.
| | - Liqiang Li
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, Fujian, 350207, China.
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China.
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China.
| | - Wenping Hu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, Fujian, 350207, China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, School of Science, Tianjin University, Tianjin, 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China
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26
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Ariga K. Materials Nanoarchitectonics at Dynamic Interfaces: Structure Formation and Functional Manipulation. MATERIALS (BASEL, SWITZERLAND) 2024; 17:271. [PMID: 38204123 PMCID: PMC10780059 DOI: 10.3390/ma17010271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 12/25/2023] [Accepted: 12/29/2023] [Indexed: 01/12/2024]
Abstract
The next step in nanotechnology is to establish a methodology to assemble new functional materials based on the knowledge of nanotechnology. This task is undertaken by nanoarchitectonics. In nanoarchitectonics, we architect functional material systems from nanounits such as atoms, molecules, and nanomaterials. In terms of the hierarchy of the structure and the harmonization of the function, the material created by nanoarchitectonics has similar characteristics to the organization of the functional structure in biosystems. Looking at actual biofunctional systems, dynamic properties and interfacial environments are key. In other words, nanoarchitectonics at dynamic interfaces is important for the production of bio-like highly functional materials systems. In this review paper, nanoarchitectonics at dynamic interfaces will be discussed, looking at recent typical examples. In particular, the basic topics of "molecular manipulation, arrangement, and assembly" and "material production" will be discussed in the first two sections. Then, in the following section, "fullerene assembly: from zero-dimensional unit to advanced materials", we will discuss how various functional structures can be created from the very basic nanounit, the fullerene. The above examples demonstrate the versatile possibilities of architectonics at dynamic interfaces. In the last section, these tendencies will be summarized, and future directions will be discussed.
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Affiliation(s)
- Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Ibaraki, Japan;
- Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Chiba, Japan
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27
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Liu Y, Zhao Z, Kang L, Qiu S, Li Q. Molecular Doping Modulation and Applications of Structure-Sorted Single-Walled Carbon Nanotubes: A Review. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304075. [PMID: 37675833 DOI: 10.1002/smll.202304075] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Revised: 07/26/2023] [Indexed: 09/08/2023]
Abstract
Single-walled carbon nanotubes (SWCNTs) that have a reproducible distribution of chiralities or single chirality are among the most competitive materials for realizing post-silicon electronics. Molecular doping, with its non-destructive and fine-tunable characteristics, is emerging as the primary doping approach for the structure-controlled SWCNTs, enabling their eventual use in various functional devices. This review provides an overview of important advances in the area of molecular doping of structure-controlled SWCNTs and their applications. The first part introduces the underlying physical process of molecular doping, followed by a comprehensive survey of the commonly used dopants for SWCNTs to date. Then, it highlights how the convergence of molecular doping and structure-sorting strategies leads to significantly improved functionality of SWCNT-based field-effect transistor arrays, transparent electrodes in optoelectronics, thermoelectrics, and many emerging devices. At last, several challenges and opportunities in this field are discussed, with the hope of shedding light on promoting the practical application of SWCNTs in future electronics.
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Affiliation(s)
- Ye Liu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zhigang Zhao
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Lixing Kang
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Song Qiu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Qingwen Li
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
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28
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Yang H, Xu T, Chen W, Wu Y, Guo X, Shen Y, Ding C, Chen X, Chen H, Ding J, Wu X, Zeng G, Zhang Z, Li Y, Li Y. Iodonium Initiators: Paving the Air-free Oxidation of Spiro-OMeTAD for Efficient and Stable Perovskite Solar Cells. Angew Chem Int Ed Engl 2023:e202316183. [PMID: 38063461 DOI: 10.1002/anie.202316183] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2023] [Indexed: 12/22/2023]
Abstract
To date, perovskite solar cells (pero-SCs) with doped 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-OMeTAD) hole transporting layers (HTLs) have shown the highest recorded power conversion efficiencies (PCEs). However, their commercialization is still impeded by poor device stability owing to the hygroscopic lithium bis(trifluoromethanesulfonyl)imide and volatile 4-tert-butylpyridine dopants as well as time-consuming oxidation in air. In this study, we explored a series of single-component iodonium initiators with strong oxidability and different electron delocalization properties to precisely manipulate the oxidation states of Spiro-OMeTAD without air assistance, and the oxidation mechanism was clearly understood. Iodine (III) in the diphenyliodonium cation (IP+ ) can accept a single electron from Spiro-OMeTAD and forms Spiro-OMeTAD⋅+ owing to its strong oxidability. Moreover, because of the coordination of the strongly delocalized TFSI- with Spiro-OMeTAD⋅+ in a stable radical complex, the resulting hole mobility was 30 times higher than that of pristine Spiro-OMeTAD. In addition, the IP-TFSI initiator facilitated the growth of a homogeneous and pinhole-free Spiro-OMeTAD film. The pero-SCs based on this oxidizing HTL showed excellent efficiencies of 25.16 % (certified: 24.85 % for 0.062-cm2 ) and 20.71 % for a 15.03-cm2 module as well as remarkable overall stability.
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Affiliation(s)
- Heyi Yang
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Tingting Xu
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Weijie Chen
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Yeyong Wu
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Xianming Guo
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210008, China
| | - Yunxiu Shen
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Chengqiang Ding
- State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Xining Chen
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Haiyang Chen
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Junyuan Ding
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Xiaoxiao Wu
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Guixiang Zeng
- Kuang Yaming Honors School, Nanjing University, Nanjing, 210008, China
| | - Zhengbiao Zhang
- State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
- State Key Laboratory of Radiation Medicine and Protection, Soochow University, Suzhou, 215123, China
| | - Yaowen Li
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, China
- State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Yongfang Li
- Laboratory of Advanced Optoelectronic Materials, Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, China
- Beijing National Laboratory for Molecular Sciences; CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
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29
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Song TT, Huang WQ, Jiang KB, Chen WF, Zhou Y, Bian HY, Wang MS, Guo GC. Significant increase of the photoresponse range and conductivity for a chalcogenide semiconductor by viologen coating through charge transfer. MATERIALS HORIZONS 2023; 10:5677-5683. [PMID: 37791893 DOI: 10.1039/d3mh01241g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/05/2023]
Abstract
Widening the photoresponse range while enhancing the electrical properties of semiconductors could reduce the complexity and cost of photodetectors or increase the power conversion efficiency of solar cells. Surface doping through charge transfer with organic species is one of the most effective and widely used approaches to achieve this aim. It usually features easier preparation over other doping methods but is still limited by the low physicochemical stability and high cost of the used organic species or low improvement of electrical properties. This work shows unprecedented surface doping of semiconductors with highly stable, easily obtained, and strong electron-accepting viologen components, realizing the significant improvement of both the photoresponse range and conductivity. Coating the chalcogenide semiconductor KGaS2 with dimethyl viologen dichloride (MV) yields a charge-transfer complex (CTC) on the surface, which broadens the photoresponse range by nearly 300 nm and improves the conductivity by 5 orders of magnitude. The latter value surpasses all records obtained by surface doping through charge transfer with organic species.
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Affiliation(s)
- Tian-Tian Song
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Wei-Qiang Huang
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Kai-Bin Jiang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Wen-Fa Chen
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Yu Zhou
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Hong-Yi Bian
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Ming-Sheng Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
| | - Guo-Cong Guo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350608, P. R. China.
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30
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Gilhooly-Finn PA, Jacobs IE, Bardagot O, Zaffar Y, Lemaire A, Guchait S, Zhang L, Freeley M, Neal W, Richard F, Palma M, Banerji N, Sirringhaus H, Brinkmann M, Nielsen CB. Interplay between Side Chain Density and Polymer Alignment: Two Competing Strategies for Enhancing the Thermoelectric Performance of P3HT Analogues. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2023; 35:9029-9039. [PMID: 38027547 PMCID: PMC10653083 DOI: 10.1021/acs.chemmater.3c01680] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/05/2023] [Revised: 10/06/2023] [Indexed: 12/01/2023]
Abstract
A series of polythiophenes with varying side chain density was synthesized, and their electrical and thermoelectric properties were investigated. Aligned and non-aligned thin films of the polymers were characterized in the neutral and chemically doped states. Optical and diffraction measurements revealed an overall lower order in the thin films with lower side chain density, also confirmed using polarized optical experiments on aligned thin films. However, upon doping the non-aligned films, a sixfold increase in electrical conductivity was observed for the polythiophene with the lowest side chain density compared to poly(3-hexylthiophene) (P3HT). We found that the improvement in conductivity was not due to a larger charge carrier density but an increase in charge carrier mobility after doping with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). On the other hand, doped aligned films did not show the same trend; lower side chain density instead led to a lower conductivity and Seebeck coefficient compared to those for P3HT. This was attributed to the poorer alignment of the polymer thin films with lower side chain density. The study demonstrates that optimizing side chain density is a synthetically simple and effective way to improve electrical conductivity in polythiophene films relevant to thermoelectric applications.
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Affiliation(s)
- Peter A. Gilhooly-Finn
- Department
of Chemistry, University College London, Gower Street, London WC1E 6BT, U.K.
- Department
of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.
| | - Ian E. Jacobs
- Optoelectronics
Group, University of Cambridge, Cavendish
Laboratory, J J Thomson Avenue, Cambridge CB3 0HE, U.K.
| | - Olivier Bardagot
- Department
of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, Freiestrasse 3, 3012 Bern, Switzerland
| | - Yasser Zaffar
- Department
of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.
| | - Antoine Lemaire
- Charles
Sadron Institute (ICS), CNRS Université de Strasbourg, UPR
22, 23 Rue du Loess, Strasbourg Cedex 02, 67034, France
| | - Shubhradip Guchait
- Charles
Sadron Institute (ICS), CNRS Université de Strasbourg, UPR
22, 23 Rue du Loess, Strasbourg Cedex 02, 67034, France
| | - Lu Zhang
- Optoelectronics
Group, University of Cambridge, Cavendish
Laboratory, J J Thomson Avenue, Cambridge CB3 0HE, U.K.
| | - Mark Freeley
- Department
of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.
| | - William Neal
- Department
of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.
| | - Fanny Richard
- Université
de Strasbourg, CNRS, ISIS UMR 7006, Strasbourg 67000, France
| | - Matteo Palma
- Department
of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.
| | - Natalie Banerji
- Department
of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, Freiestrasse 3, 3012 Bern, Switzerland
| | - Henning Sirringhaus
- Optoelectronics
Group, University of Cambridge, Cavendish
Laboratory, J J Thomson Avenue, Cambridge CB3 0HE, U.K.
| | - Martin Brinkmann
- Charles
Sadron Institute (ICS), CNRS Université de Strasbourg, UPR
22, 23 Rue du Loess, Strasbourg Cedex 02, 67034, France
| | - Christian B. Nielsen
- Department
of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.
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31
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Ishii M, Yamashita Y, Watanabe S, Ariga K, Takeya J. Doping of molecular semiconductors through proton-coupled electron transfer. Nature 2023; 622:285-291. [PMID: 37821588 DOI: 10.1038/s41586-023-06504-8] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 08/01/2023] [Indexed: 10/13/2023]
Abstract
The chemical doping of molecular semiconductors is based on electron-transfer reactions between the semiconductor and dopant molecules; here, the redox potential of the dopant is key to control the Fermi level of the semiconductor1,2. The tunability and reproducibility of chemical doping are limited by the availability of dopant materials and the effects of impurities such as water. Here we focused on proton-coupled electron-transfer (PCET) reactions, which are widely used in biochemical processes3,4; their redox potentials depend on an easily handled parameter, that is, proton activity. We immersed p-type organic semiconductor thin films in aqueous solutions with PCET-based redox pairs and hydrophobic molecular ions. Synergistic reactions of PCET and ion intercalation resulted in efficient chemical doping of crystalline organic semiconductor thin films under ambient conditions. In accordance with the Nernst equation, the Fermi levels of the semiconductors were controlled reproducibly with a high degree of precision-a thermal energy of about 25 millielectronvolts at room temperature and over a few hundred millielectronvolts around the band edge. A reference-electrode-free, resistive pH sensor based on this method is also proposed. A connection between semiconductor doping and proton activity, a widely used parameter in chemical and biochemical processes, may help create a platform for ambient semiconductor processes and biomolecular electronics.
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Affiliation(s)
- Masaki Ishii
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan
- Graduate School of Science and Technology, Tokyo University of Science, Noda, Japan
| | - Yu Yamashita
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan.
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Japan.
| | - Shun Watanabe
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Japan
| | - Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan
- Graduate School of Science and Technology, Tokyo University of Science, Noda, Japan
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Japan
| | - Jun Takeya
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Japan
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32
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Hyun Suh E, Beom Kim S, Jung J, Jang J. Extremely Electron-Withdrawing Lewis-Paired CN Groups for Organic p-Dopants. Angew Chem Int Ed Engl 2023; 62:e202304245. [PMID: 37271729 DOI: 10.1002/anie.202304245] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 06/01/2023] [Accepted: 06/02/2023] [Indexed: 06/06/2023]
Abstract
P-type chemical doping (p-doping) is a key technique to modulate the optical, electrical, and electronic properties of organic semiconductors. However, typical functional groups in organic p-dopants have insufficient electron-withdrawing strength, and the inevitable diffusion of dopants in host matrices degrades doping stabilities. Herein, we utilize extremely electron-withdrawing Lewis-paired CN groups as a new class of building blocks for designing unprecedentedly strong organic p-dopants with excellent doping stability. Various Lewis acids are paired with CN-functionalized conjugated molecules in the solution state, which strengthens the electron-withdrawing properties of CN groups almost twofold. The large dopants afford outstanding doping stability against continuous heating and long-term atmospheric exposure, which is promising for practical applications in devices. Given the broad applicability of this simple combinatorial approach, it may impact many fields of (opto)electronics.
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Affiliation(s)
- Eui Hyun Suh
- Department of Energy Engineering, Hanyang University, 04763, Seoul, Republic of Korea
| | - Sang Beom Kim
- Department of Energy Engineering, Hanyang University, 04763, Seoul, Republic of Korea
| | - Jaemin Jung
- Department of Energy Engineering, Hanyang University, 04763, Seoul, Republic of Korea
| | - Jaeyoung Jang
- Department of Energy Engineering, Hanyang University, 04763, Seoul, Republic of Korea
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33
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Le VN, Bombile JH, Rupasinghe GS, Baustert KN, Li R, Maria IP, Shahi M, Alarcon Espejo P, McCulloch I, Graham KR, Risko C, Paterson AF. New Chemical Dopant and Counterion Mechanism for Organic Electrochemical Transistors and Organic Mixed Ionic-Electronic Conductors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207694. [PMID: 37466175 PMCID: PMC10520668 DOI: 10.1002/advs.202207694] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Revised: 04/07/2023] [Indexed: 07/20/2023]
Abstract
Organic mixed ionic-electronic conductors (OMIECs) have varied performance requirements across a diverse application space. Chemically doping the OMIEC can be a simple, low-cost approach for adapting performance metrics. However, complex challenges, such as identifying new dopant materials and elucidating design rules, inhibit its realization. Here, these challenges are approached by introducing a new n-dopant, tetrabutylammonium hydroxide (TBA-OH), and identifying a new design consideration underpinning its success. TBA-OH behaves as both a chemical n-dopant and morphology additive in donor acceptor co-polymer naphthodithiophene diimide-based polymer, which serves as an electron transporting material in organic electrochemical transistors (OECTs). The combined effects enhance OECT transconductance, charge carrier mobility, and volumetric capacitance, representative of the key metrics underpinning all OMIEC applications. Additionally, when the TBA+ counterion adopts an "edge-on" location relative to the polymer backbone, Coulombic interaction between the counterion and polaron is reduced, and polaron delocalization increases. This is the first time such mechanisms are identified in doped-OECTs and doped-OMIECs. The work herein therefore takes the first steps toward developing the design guidelines needed to realize chemical doping as a generic strategy for tailoring performance metrics in OECTs and OMIECs.
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Affiliation(s)
- Vianna N. Le
- Department of Chemical and Materials EngineeringDepartment of Electrical EngineeringCentre for Applied Energy ResearchUniversity of KentuckyLexingtonKY40506USA
| | - Joel H. Bombile
- Department of Chemistryand Centre for Applied Energy ResearchUniversity of KentuckyLexingtonKY40506USA
| | - Gehan S. Rupasinghe
- Department of Chemical and Materials EngineeringDepartment of Electrical EngineeringCentre for Applied Energy ResearchUniversity of KentuckyLexingtonKY40506USA
| | - Kyle N. Baustert
- Department of ChemistryUniversity of KentuckyLexingtonKY40506USA
| | | | - Iuliana P. Maria
- Department of ChemistryChemistry Research LaboratoryUniversity of OxfordOxfordOX1 3TAUK
| | - Maryam Shahi
- Department of Chemical and Materials EngineeringDepartment of Electrical EngineeringCentre for Applied Energy ResearchUniversity of KentuckyLexingtonKY40506USA
| | - Paula Alarcon Espejo
- Department of Chemical and Materials EngineeringDepartment of Electrical EngineeringCentre for Applied Energy ResearchUniversity of KentuckyLexingtonKY40506USA
| | - Iain McCulloch
- Department of ChemistryChemistry Research LaboratoryUniversity of OxfordOxfordOX1 3TAUK
- King Abdullah University of Science and TechnologyKAUST Solar CentreThuwal23955‐6900Saudi Arabia
| | | | - Chad Risko
- Department of Chemistryand Centre for Applied Energy ResearchUniversity of KentuckyLexingtonKY40506USA
| | - Alexandra F. Paterson
- Department of Chemical and Materials EngineeringDepartment of Electrical EngineeringCentre for Applied Energy ResearchUniversity of KentuckyLexingtonKY40506USA
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34
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Yoon SE, Kim Y, Kim H, Kwon HG, Kim U, Lee SY, Park JH, Seo H, Kwak SK, Kim SW, Kim JH. Remarkable Electrical Conductivity Increase and Pure Metallic Properties from Semiconducting Colloidal Nanocrystals by Cation Exchange for Solution-Processable Optoelectronic Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207511. [PMID: 36916693 DOI: 10.1002/smll.202207511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 02/16/2023] [Indexed: 06/08/2023]
Abstract
The authors report a strategic approach to achieve metallic properties from semiconducting CuFeS colloidal nanocrystal (NC) solids through cation exchange method. An unprecedentedly high electrical conductivity is realized by the efficient generation of charge carriers onto a semiconducting CuS NC template via minimal Fe exchange. An electrical conductivity exceeding 10 500 S cm-1 (13 400 S cm-1 at 2 K) and a sheet resistance of 17 Ω/sq at room temperature, which are among the highest values for solution-processable semiconducting NCs, are achieved successfully from bornite-phase CuFeS NC films possessing 10% Fe atom. The temperature dependence of the corresponding films exhibits pure metallic characteristics. Highly conducting NCs are demonstrated for a thermoelectric layer exhibiting a high power factor over 1.2 mW m-1 K-2 at room temperature, electrical wires for switching on light emitting diods (LEDs), and source-drain electrodes for p- and n-type organic field-effect transistors. Ambient stability, eco-friendly composition, and solution-processability further validate their sustainable and practical applicability. The present study provides a simple but very effective method for significantly increasing charge carrier concentrations in semiconducting colloidal NCs to achieve metallic properties, which is applicable to various optoelectronic devices.
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Affiliation(s)
- Sang Eun Yoon
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, South Korea
| | - Yongjin Kim
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, South Korea
| | - Hyeongjun Kim
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Hyo-Geun Kwon
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, South Korea
| | - Unjeong Kim
- Department of Materials Science and Engineering, Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Sang Yeon Lee
- Department of Materials Science and Engineering, Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Ju Hyun Park
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Hyungtak Seo
- Department of Materials Science and Engineering, Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Sang Kyu Kwak
- Department of Chemical and Biological Engineering, Korea University, Seoul, 02841, South Korea
| | - Sang-Wook Kim
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, South Korea
| | - Jong H Kim
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, South Korea
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35
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Wei H, Cheng Z, Wu T, Liu Y, Guo J, Chen PA, Xia J, Xie H, Qiu X, Liu T, Zhang B, Hui J, Zeng Z, Bai Y, Hu Y. Novel Organic Superbase Dopants for Ultraefficient N-Doping of Organic Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300084. [PMID: 36929089 DOI: 10.1002/adma.202300084] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 03/13/2023] [Indexed: 06/02/2023]
Abstract
Doping is a powerful technique for engineering the electrical properties of organic semiconductors (OSCs), yet efficient n-doping of OSCs remains a central challenge. Herein, the discovery of two organic superbase dopants, namely P2-t-Bu and P4-t-Bu as ultra-efficient n-dopants for OSCs is reported. Typical n-type semiconductors such as N2200 and PC61 BM are shown to experience a significant increase of conductivity upon doping by the two dopants. In particular, the optimized electrical conductivity of P2-t-Bu-doped PC61 BM reaches a record-high value of 2.64 S cm-1 . The polaron generation efficiency of P2-t-Bu-doped in PC61 BM is found to be over 35%, which is 2-3 times higher than that of benchmark n-dopant N-DMBI. In addition, a deprotonation-initiated, nucleophilic-attack-based n-doping mechanism is proposed for the organic superbases, which involves the deprotonation of OSC molecules, the nucleophilic attack of the resulting carbanions on the OSC's π-bonds, and the subsequent n-doping through single electron transfer process between the anionized and neutral OSCs. This work highlights organic superbases as promising n-dopants for OSCs and opens up opportunities to explore and develop highly efficient n-dopants.
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Affiliation(s)
- Huan Wei
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Zehong Cheng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Tong Wu
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Yu Liu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jing Guo
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Ping-An Chen
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiangnan Xia
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Haihong Xie
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xincan Qiu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Tingting Liu
- College of Energy, Soochow University, 688 Moye Road, Suzhou, Jiangsu, 215123, China
| | - Bohan Zhang
- Key Laboratory of Natural Medicine and Immune Engineering, Henan University, 85 Minglun Street, Kaifeng, Henan, 475004, China
| | - Jingshu Hui
- College of Energy, Soochow University, 688 Moye Road, Suzhou, Jiangsu, 215123, China
| | - Zebing Zeng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Yugang Bai
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Yuanyuan Hu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
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36
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Yuan D, Liu W, Zhu X. Efficient and air-stable n-type doping in organic semiconductors. Chem Soc Rev 2023. [PMID: 37183967 DOI: 10.1039/d2cs01027e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Chemical doping of organic semiconductors (OSCs) enables feasible tuning of carrier concentration, charge mobility, and energy levels, which is critical for the applications of OSCs in organic electronic devices. However, in comparison with p-type doping, n-type doping has lagged far behind. The achievement of efficient and air-stable n-type doping in OSCs would help to significantly improve electron transport and device performance, and endow new functionalities, which are, therefore, gaining increasing attention currently. In this review, the issue of doping efficiency and doping air stability in n-type doped OSCs was carefully addressed. We first clarified the main factors that influenced chemical doping efficiency in n-type OSCs and then explain the origin of instability in n-type doped films under ambient conditions. Doping microstructure, charge transfer, and dissociation efficiency were found to determine the overall doping efficiency, which could be precisely tuned by molecular design and post treatments. To further enhance the air stability of n-doped OSCs, design strategies such as tuning the lowest unoccupied molecular orbital (LUMO) energy level, charge delocalization, intermolecular stacking, in situ n-doping, and self-encapsulations are discussed. Moreover, the applications of n-type doping in advanced organic electronics, such as solar cells, light-emitting diodes, field-effect transistors, and thermoelectrics are being introduced. Finally, an outlook is provided on novel doping ways and material systems that are aimed at stable and efficient n-type doped OSCs.
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Affiliation(s)
- Dafei Yuan
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Wuyue Liu
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Xiaozhang Zhu
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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37
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Yoon SJ, Choi KS, Zhong L, Jeong S, Cho Y, Jung S, Yoon SE, Kim JH, Yang C. Dithieno[3,2-f:2',3'-h]quinoxaline-Based Photovoltaic-Thermoelectric Dual-Functional Energy-Harvesting Wide-Bandgap Polymer and its Backbone Isomer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300507. [PMID: 37010009 DOI: 10.1002/smll.202300507] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 03/09/2023] [Indexed: 06/19/2023]
Abstract
Both organic solar cells (OSCs) and organic thermoelectrics (OTEs) are promising energy-harvesting technologies for future renewable and sustainable energy sources. Among various material systems, organic conjugated polymers are an emerging material class for the active layers of both OSCs and OTEs. However, organic conjugated polymers showing both OSC and OTE properties are rarely reported because of the different requirements toward the OSCs and OTEs. In this study, the first simultaneous investigation of the OSC and OTE properties of a wide-bandgap polymer PBQx-TF and its backbone isomer iso-PBQx-TF are reported. All wide-bandgap polymers form face-on orientations in a thin-film state, but PBQx-TF has more of a crystalline character than iso-PBQx-TF, originating from the backbone isomeric structures of α,α '/β,β '-connection between two thiophene rings. Additionally, iso-PBQx-TF shows inactive OSC and poor OTE properties, probably because of the absorption mismatch and unfavorable molecular orientations. At the same time, PBQx-TF exhibits both decent OSC and OTE performances, indicating that it satisfies the requirements for both OSCs and OTEs. This study presents the OSC and OTE dual-functional energy-harvesting wide-bandgap polymer and the future research directions for hybrid energy-harvesting materials.
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Affiliation(s)
- Seong-Jun Yoon
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, Ulsan, 44919, South Korea
| | - Kang Suh Choi
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, South Korea
| | - Lian Zhong
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, Ulsan, 44919, South Korea
| | - Seonghun Jeong
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, Ulsan, 44919, South Korea
| | - Yongjoon Cho
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, Ulsan, 44919, South Korea
- Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Sungwoo Jung
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, Ulsan, 44919, South Korea
| | - Sang Eun Yoon
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, South Korea
| | - Jong H Kim
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, South Korea
| | - Changduk Yang
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, Ulsan, 44919, South Korea
- Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, Ulsan, 44919, South Korea
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38
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Ariga K. Molecular nanoarchitectonics: unification of nanotechnology and molecular/materials science. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2023; 14:434-453. [PMID: 37091285 PMCID: PMC10113519 DOI: 10.3762/bjnano.14.35] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/08/2023] [Accepted: 03/14/2023] [Indexed: 05/03/2023]
Abstract
The development of nanotechnology has provided an opportunity to integrate a wide range of phenomena and disciplines from the atomic scale, the molecular scale, and the nanoscale into materials. Nanoarchitectonics as a post-nanotechnology concept is a methodology for developing functional material systems using units such as atoms, molecules, and nanomaterials. Especially, molecular nanoarchitectonics has been strongly promoted recently by incorporating nanotechnological methods into organic synthesis. Examples of research that have attracted attention include the direct observation of organic synthesis processes at the molecular level with high resolution, and the control of organic syntheses with probe microscope tips. These can also be considered as starting points for nanoarchitectonics. In this review, these examples of molecular nanoarchitectonics are introduced, and future prospects of nanoarchitectonics are discussed. The fusion of basic science and the application of practical functional materials will complete materials chemistry for everything.
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Affiliation(s)
- Katsuhiko Ariga
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan
- Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
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Shen Z, Lu W, Wei P, Zhu Y, Jiang Y, Bu L, Lu G. Highly Conductive Ultrathin Layers of Conjugated Polymers for Metal-Free Coplanar Transistors with Single-Polymer Transport Layers. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12099-12108. [PMID: 36808932 DOI: 10.1021/acsami.2c20298] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Although metal or oxide conductive films are widely used as electrodes of electronic devices, organic electrodes would be more favorable for next-generation organic electronics. Here, using some model conjugated polymers as examples, we report a class of highly conductive and optically transparent polymer ultrathin layers. Vertical phase separation of semiconductor/insulator blends leads to a highly ordered two-dimensional (2D) ultrathin layer of conjugated-polymer chains on the insulator. Afterwards, the thermally evaporated dopants on the ultrathin layer lead to a conductivity of up to 103 S cm-1 and a sheet resistance 103 Ω/square for a model conjugated polymer poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophenes) (PBTTT). The high conductivity is due to the high hole mobility (∼ 20 cm2 V-1 s-1), although doping-induced charge density is still in the moderate range of 1020 cm-3 with a 1 nm thick dopant. Metal-free monolithic coplanar field-effect transistors using the same conjugated-polymer ultrathin layer with alternatively doped regions as electrodes and a semiconductor layer are realized. The field-effect mobility of this monolithic transistor is over 2 cm2 V-1 s-1 for PBTTT, one order higher than that of the conventional PBTTT transistor using metal electrodes. The optical transparency of the single conjugated-polymer transport layer is over 90%, demonstrating a bright future for all-organic transparent electronics.
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Affiliation(s)
- Zichao Shen
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
| | - Wanlong Lu
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
| | - Peng Wei
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yihang Jiang
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an 710049, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
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40
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Oono T, Okada T, Sasaki T, Inagaki K, Ushiku T, Shimizu T, Hatakeyama T, Fukagawa H. Unlocking the Full Potential of Electron-Acceptor Molecules for Efficient and Stable Hole Injection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210413. [PMID: 36571784 DOI: 10.1002/adma.202210413] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Revised: 12/19/2022] [Indexed: 06/17/2023]
Abstract
Understanding the hole-injection mechanism and improving the hole-injection property are of pivotal importance in the future development of organic optoelectronic devices. Electron-acceptor molecules with high electron affinity (EA) are widely used in electronic applications, such as hole injection and p-doping. Although p-doping has generally been studied in terms of matching the ionization energy (IE) of organic semiconductors with the EA of acceptor molecules, little is known about the effect of the EA of acceptor molecules on the hole-injection property. In this work, the hole-injection mechanism in devices is completely clarified, and a strategy to optimize the hole-injection property of the acceptor molecule is developed. Efficient and stable hole injection is found to be possible even into materials with IEs as high as 5.8 eV by controlling the charged state of an acceptor molecule with an EA of about 5.0 eV. This excellent hole-injection property enables direct hole injection into an emitting layer, realizing a pure blue organic light-emitting diode with an extraordinarily low turn-on voltage of 2.67 V, a power efficiency of 29 lm W-1 , an external quantum efficiency of 28% and a Commission Internationale de l'Eclairage y coordinate of less than 0.10.
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Affiliation(s)
- Taku Oono
- Japan Broadcasting Corporation (NHK), Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157-8510, Japan
| | - Takuya Okada
- Japan Broadcasting Corporation (NHK), Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157-8510, Japan
| | - Tsubasa Sasaki
- Japan Broadcasting Corporation (NHK), Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157-8510, Japan
| | - Kaito Inagaki
- Department of Physics, Graduate School of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo, 162-8610, Japan
| | - Takuma Ushiku
- Department of Physics, Graduate School of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo, 162-8610, Japan
| | - Takahisa Shimizu
- Japan Broadcasting Corporation (NHK), Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157-8510, Japan
| | - Takuji Hatakeyama
- Department of Chemistry, School of Science, Kyoto University, Sakyo-ku, Kyoto, 606-8502, Japan
| | - Hirohiko Fukagawa
- Japan Broadcasting Corporation (NHK), Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157-8510, Japan
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Kim SH, Yook H, Sung W, Choi J, Lim H, Chung S, Han JW, Cho K. Extremely Suppressed Energetic Disorder in a Chemically Doped Conjugated Polymer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207320. [PMID: 36271732 DOI: 10.1002/adma.202207320] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
Chemical doping can be used to tune the optoelectronic properties of conjugated polymers (CPs), extending their applications as conducting materials. Unfortunately, chemically doped CP films containing excess dopants exhibit an increase in energetic disorder upon structural alteration, and Coulomb interactions between charge carriers and dopants also affect such disorder. The increase in energetic disorder leads to a broadening of the density of states, which consequently impedes efficient charge transport in chemically doped CPs. However, the molecular origins that are inherently resistant to such incidental increase of energetic disorder in chemically doped CPs have not been sufficiently explored. Here, it is discovered that energetic disorder in chemically doped CPs can be suppressed to a level close to the theoretical limit. Indacenodithiophene-co-benzothiadiazole (IDTBT) doped with triethyloxonium hexachloroantimonate (OA) exhibits disorder-free charge-transport characteristics and band-like transport behavior with astonishing carrier mobility as a result of reinforced 1D intramolecular transport. Molecular structure of IDTBT provides a capability to lower the energetic disorder that generally arises from the inclusion of heterogeneous dopants. The results suggest the possibilities of implementing disorder-free CPs that exhibit excellent charge transport characteristics in the chemically doped state and satisfy a prerequisite for their availability in the industry.
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Affiliation(s)
- Seong Hyeon Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Hyunwoo Yook
- School of Interdisciplinary Bioscience and Bioengineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Woong Sung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Jinhyeok Choi
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Hyungsub Lim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Sein Chung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Jeong Woo Han
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Kilwon Cho
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
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Ariga K. Molecular Machines and Microrobots: Nanoarchitectonics Developments and On-Water Performances. MICROMACHINES 2022; 14:mi14010025. [PMID: 36677086 PMCID: PMC9860627 DOI: 10.3390/mi14010025] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Revised: 12/16/2022] [Accepted: 12/21/2022] [Indexed: 05/14/2023]
Abstract
This review will focus on micromachines and microrobots, which are objects at the micro-level with similar machine functions, as well as nano-level objects such as molecular machines and nanomachines. The paper will initially review recent examples of molecular machines and microrobots that are not limited to interfaces, noting the diversity of their functions. Next, examples of molecular machines and micromachines/micro-robots functioning at the air-water interface will be discussed. The behaviors of molecular machines are influenced significantly by the specific characteristics of the air-water interface. By placing molecular machines at the air-water interface, the scientific horizon and depth of molecular machine research will increase dramatically. On the other hand, for microrobotics, more practical and advanced systems have been reported, such as the development of microrobots and microswimmers for environmental remediations and biomedical applications. The research currently being conducted on the surface of water may provide significant basic knowledge for future practical uses of molecular machines and microrobots.
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Affiliation(s)
- Katsuhiko Ariga
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;
- Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
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Guo J, Liu Y, Chen P, Wang X, Wang Y, Guo J, Qiu X, Zeng Z, Jiang L, Yi Y, Watanabe S, Liao L, Bai Y, Nguyen T, Hu Y. Revealing the Electrophilic-Attack Doping Mechanism for Efficient and Universal p-Doping of Organic Semiconductors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203111. [PMID: 36089649 PMCID: PMC9661849 DOI: 10.1002/advs.202203111] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2022] [Revised: 08/18/2022] [Indexed: 06/02/2023]
Abstract
Doping is of great importance to tailor the electrical properties of semiconductors. However, the present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply to some OSCs conditionally, seriously limiting their general applications. Herein, a novel p-doping mechanism is revealed by investigating the interactions between the dopant trityl tetrakis(pentafluorophenyl) borate (TrTPFB) and poly(3-hexylthiophene) (P3HT). It is found that electrophilic attack of the trityl cations on thiophenes results in the formation of tritylated thiophenium ions, which subsequently induce electron transfer from neighboring P3HT chains to realize p-doping. This unique p-doping mechanism enables TrTPFB to p-dope various OSCs including those with high ionization energy (IE ≈ 5.8 eV). Moreover, this doping mechanism endows TrTPFB with strong doping capability, leading to doping efficiency of over 80% in P3HT. The discovery and elucidation of this novel doping mechanism not only points out that strong electrophiles are a class of efficient p-dopants for OSCs, but also provides new opportunities toward highly efficient doping of various OSCs.
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Affiliation(s)
- Jing Guo
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082P. R. China
| | - Ying Liu
- State Key Laboratory of Chem‐/Bio‐Sensing and ChemometricsSchool of Chemistry and Chemical EngineeringHunan UniversityChangshaHunan410082P. R. China
| | - Ping‐An Chen
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082P. R. China
| | - Xinhao Wang
- State Key Laboratory of Chem‐/Bio‐Sensing and ChemometricsSchool of Chemistry and Chemical EngineeringHunan UniversityChangshaHunan410082P. R. China
| | - Yanpei Wang
- State Key Laboratory of Chem‐/Bio‐Sensing and ChemometricsSchool of Chemistry and Chemical EngineeringHunan UniversityChangshaHunan410082P. R. China
| | - Jing Guo
- State Key Laboratory of Chem‐/Bio‐Sensing and ChemometricsSchool of Chemistry and Chemical EngineeringHunan UniversityChangshaHunan410082P. R. China
| | - Xincan Qiu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082P. R. China
| | - Zebing Zeng
- State Key Laboratory of Chem‐/Bio‐Sensing and ChemometricsSchool of Chemistry and Chemical EngineeringHunan UniversityChangshaHunan410082P. R. China
| | - Lang Jiang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
| | - Yuanping Yi
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
| | - Shun Watanabe
- Material Innovation Research Center (MIRC) and Department of Advanced Material ScienceGraduate School of Frontier SciencesThe University of Tokyo5‐1‐5 KashiwanohaKashiwaChiba77‐8561Japan
| | - Lei Liao
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082P. R. China
| | - Yugang Bai
- State Key Laboratory of Chem‐/Bio‐Sensing and ChemometricsSchool of Chemistry and Chemical EngineeringHunan UniversityChangshaHunan410082P. R. China
| | - Thuc‐Quyen Nguyen
- Center for Polymers and Organic SolidsDepartment of Chemistry and BiochemistryUniversity of California at Santa BarbaraSanta BarbaraCA93106USA
| | - Yuanyuan Hu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082P. R. China
- Shenzhen Research Institute of Hunan UniversityShenzhen518063P. R. China
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Ariga K. Liquid Interfacial Nanoarchitectonics: Molecular Machines, Organic Semiconductors, Nanocarbons, Stem Cells, and Others. Curr Opin Colloid Interface Sci 2022. [DOI: 10.1016/j.cocis.2022.101656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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45
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Persson G, Järsvall E, Röding M, Kroon R, Zhang Y, Barlow S, Marder SR, Müller C, Olsson E. Visualisation of individual dopants in a conjugated polymer: sub-nanometre 3D spatial distribution and correlation with electrical properties. NANOSCALE 2022; 14:15404-15413. [PMID: 36218271 DOI: 10.1039/d2nr03554e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
While molecular doping is ubiquitous in all branches of organic electronics, little is known about the spatial distribution of dopants, especially at molecular length scales. Moreover, a homogeneous distribution is often assumed when simulating transport properties of these materials, even though the distribution is expected to be inhomogeneous. In this study, electron tomography is used to determine the position of individual molybdenum dithiolene complexes and their three-dimensional distribution in a semiconducting polymer at the sub-nanometre scale. A heterogeneous distribution is observed, the characteristics of which depend on the dopant concentration. At 5 mol% of the molybdenum dithiolene complex, the majority of the dopant species are present as isolated molecules or small clusters up to five molecules. At 20 mol% dopant concentration and higher, the dopant species form larger nanoclusters with elongated shapes. Even in case of these larger clusters, each individual dopant species is still in contact with the surrounding polymer. The electrical conductivity first strongly increases with dopant concentration and then slightly decreases for the most highly doped samples, even though no large aggregates can be observed. The decreased conductivity is instead attributed to the increased energetic disorder and lower probability of electron transfer that originates from the increased size and size variation in dopant clusters. This study highlights the importance of detailed information concerning the dopant spatial distribution at the sub-nanometre scale in three dimensions within the organic semiconductor host. The information acquired using electron tomography may facilitate more accurate simulations of charge transport in doped organic semiconductors.
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Affiliation(s)
- Gustav Persson
- Department of Physics, Chalmers University of Technology, 41296 Göteborg, Sweden.
| | - Emmy Järsvall
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Magnus Röding
- RISE Research Institutes of Sweden, Biomaterials and Health, Agriculture and Food, 41276 Göteborg, Sweden
- Department of Mathematical Sciences, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Renee Kroon
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, Sweden
- Laboratory of Organic Electronics, Linköping University, 60174 Norrköping, Sweden
| | - Yadong Zhang
- School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400, USA
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, CO 80303, USA
| | - Stephen Barlow
- School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400, USA
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, CO 80303, USA
| | - Seth R Marder
- School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400, USA
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, CO 80303, USA
- School of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, CO 80303, USA
- School of Chemistry, University of Colorado Boulder, Boulder, CO 80303, USA
| | - Christian Müller
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Eva Olsson
- Department of Physics, Chalmers University of Technology, 41296 Göteborg, Sweden.
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Cho KG, Seol KH, Kim MS, Hong K, Lee KH. Tuning Threshold Voltage of Electrolyte-Gated Transistors by Binary Ion Doping. ACS APPLIED MATERIALS & INTERFACES 2022; 14:50004-50012. [PMID: 36301020 DOI: 10.1021/acsami.2c15229] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Electrolyte-gated transistors (EGTs) operating at low voltages have attracted significant attention in widespread applications, including neuromorphic devices, nonvolatile memories, chemical/biosensors, and printed electronics. To increase the practicality of the EGTs in electronic circuits, systematic control of threshold voltage (Vth), which determines the power consumption and noise margin of the circuits, is essential. In this study, we present a simple strategy for systematically tuning Vth to almost half of the operating potential range of the EGT by controlling the electrochemical doping of electrolyte ions into organic p-type semiconductors. The type of anion in the ionogel determines Vth as well as other transistor characteristics, such as the subthreshold swing and mobility, because the positive hole carriers are the majority carriers. More importantly, Vth can be finely controlled by binary anion doping using ionogels with two anions with varying molar fractions at a fixed cation. In addition, the binary anion doping successfully controls the inversion characteristics of ion-gated inverters. As unlimited combinations of ion pairs are possible for ionogels, this study opens a route for controlling the device characteristics to expand the practicality and applicability of ionogel-based EGTs for next-generation ionic/electronic devices.
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Affiliation(s)
- Kyung Gook Cho
- Department of Chemistry and Chemical Engineering, Education and Research Center for Smart Energy and Materials, Inha University, Incheon22212, Republic of Korea
| | - Kyoung Hwan Seol
- Department of Chemistry and Chemical Engineering, Education and Research Center for Smart Energy and Materials, Inha University, Incheon22212, Republic of Korea
| | - Min Su Kim
- Department of Chemistry and Chemical Engineering, Education and Research Center for Smart Energy and Materials, Inha University, Incheon22212, Republic of Korea
| | - Kihyon Hong
- Department of Materials Science and Engineering, Chungnam National University (CNU), Daejeon34134, Republic of Korea
| | - Keun Hyung Lee
- Department of Chemistry and Chemical Engineering, Education and Research Center for Smart Energy and Materials, Inha University, Incheon22212, Republic of Korea
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Liu X, Li H, Cui Q, Wang S, Ma C, Li N, Bu N, Yang T, Song X, Liu Y, Yang Z, Zhao K, Liu S(F. Molecular Doping of Flexible Lead‐Free Perovskite‐Polymer Thick Membranes for High‐Performance X‐Ray Detection. Angew Chem Int Ed Engl 2022; 61:e202209320. [DOI: 10.1002/anie.202209320] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2022] [Indexed: 11/09/2022]
Affiliation(s)
- Xinmei Liu
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Haojin Li
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Qingyue Cui
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
- Dalian National Laboratory for Clean Energy iChEM Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 P. R. China
- Department of Chemical Physics Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) University of Science and Technology of China (USTC) Hefei 230026 P. R. China
| | - Shumei Wang
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Chuang Ma
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Nan Li
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Nuo Bu
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Tinghuan Yang
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Xin Song
- Solar and Photovoltaic Engineering Research Center (SPERC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
| | - Yucheng Liu
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Zhou Yang
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Kui Zhao
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Shengzhong (Frank) Liu
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
- Dalian National Laboratory for Clean Energy iChEM Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 P. R. China
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48
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Mondal K, Ganguly S, Maiti SK. Strain-induced thermoelectricity in pentacene. Phys Chem Chem Phys 2022; 24:23679-23689. [PMID: 36148772 DOI: 10.1039/d2cp02523j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The present work discusses a non-synthetic strategy to achieve a favorable thermoelectric response in pentacene via strain. It is found that a uni-axial strain is capable of inducing spatial anisotropy in the molecule. As a result, the transmission spectrum becomes highly asymmetric under a particular strained scenario, which is the primary requirement to get a favorable thermoelectric response. Different thermoelectric quantities are computed for the strain-induced pentacene using Green's function formalism following the Landauer-Büttiker prescription. Various scenarios are considered to make the present work more realistic, such as the effects of substrate, coupling strength between the molecule and electrodes, dangling bonds, etc. Such a scheme to enhance the thermoelectric performance in pentacene is technologically intriguing and completely new to the best of our knowledge.
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Affiliation(s)
- Kallol Mondal
- School of Physical Sciences, National Institute of Science Education and Research Bhubaneswar, HBNI, Jatni, Odisha, 752050, India.
| | - Sudin Ganguly
- Department of Physics, School of Applied Sciences, University of Science and Technology Meghalaya, Ri-Bhoi, 793101, India.
| | - Santanu K Maiti
- Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barrackpore Trunk Road, Kolkata, 700108, India.
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49
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Wang T, Zhang Y, Kong W, Qiao L, Peng B, Shen Z, Han Q, Chen H, Yuan Z, Zheng R, Yang X. Transporting holes stably under iodide invasion in efficient perovskite solar cells. Science 2022; 377:1227-1232. [PMID: 36074838 DOI: 10.1126/science.abq6235] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Highly efficient halide perovskite solar cells generally rely on lithium-doped organic hole transporting layers that are thermally and chemically unstable, in part because of migration of iodide anions from the perovskite layer. We report a solution strategy to stabilize the hole transport in organic layers by ionic coupling positive polymer radicals and molecular anions through an ion-exchange process. The target layer exhibited a hole conductivity that was 80 times higher than that of the conventional lithium-doped layer. Moreover, after extreme iodide invasion caused by light-soaking at 85°C for 200 hours, the target layer maintained high hole conductivity and well-matched band alignment. This ion-exchange strategy enabled fabrication of perovskite solar cells with a certified power conversion efficiency of 23.9% that maintained 92% under standard illumination at 85°C after 1000 hours.
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Affiliation(s)
- Tao Wang
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China.,Center of Hydrogen Science, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.,Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai 201210, China
| | - Yao Zhang
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Weiyu Kong
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China.,Center of Hydrogen Science, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.,Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai 201210, China
| | - Liang Qiao
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China.,Center of Hydrogen Science, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.,Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai 201210, China
| | - Bingguo Peng
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China.,Center of Hydrogen Science, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.,Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai 201210, China
| | - Zhichao Shen
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Qifeng Han
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Han Chen
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhiliang Yuan
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Rongkun Zheng
- School of Physics, Sydney Nano Institute, The University of Sydney, Sydney, NSW 2006, Australia
| | - Xudong Yang
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China.,Center of Hydrogen Science, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.,Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai 201210, China
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50
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Liu X, Li H, Cui Q, Wang S, Ma C, Li N, Bu N, Yang T, Song X, Liu Y, Yang Z, Zhao K, Liu S(F. Molecular Doping of Flexible Lead‐Free Perovskite‐Polymer Thick Membranes for High‐Performance X‐Ray Detection. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202209320] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Xinmei Liu
- Shaanxi Normal University School of Materials Science and Engineering No. 620, West Chang'an Street, Xi'an City, Shaanxi Province CHINA
| | - Haojin Li
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Qingyue Cui
- University of Science and Technology of China School of Chemistry and Materials CHINA
| | - Shumei Wang
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Chuang Ma
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Nan Li
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Nuo Bu
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Tinghuan Yang
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Xin Song
- King Abdullah University of Science and Technology Division of Physical Sciences and Engineering SAUDI ARABIA
| | - Yucheng Liu
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Zhou Yang
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Kui Zhao
- Shaanxi Normal University Materials Science and Engineering No. 620, West Chang'an Avenue, Chang'an District 710000 Xi'an CHINA
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