1
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Yu X, Peng Z, Xu L, Shi W, Li Z, Meng X, He X, Wang Z, Duan S, Tong L, Huang X, Miao X, Hu W, Ye L. Manipulating 2D Materials through Strain Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2402561. [PMID: 38818684 DOI: 10.1002/smll.202402561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2024] [Revised: 05/15/2024] [Indexed: 06/01/2024]
Abstract
This review explores the growing interest in 2D layered materials, such as graphene, h-BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.
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Affiliation(s)
- Xiangxiang Yu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- School of Physic and Optoelectronic Engineering, Yangtze University, Jingzhou, Hubei, 434023, China
| | - Zhuiri Peng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Langlang Xu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Wenhao Shi
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zheng Li
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiaohan Meng
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiao He
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Shikun Duan
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Tong
- Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, 999077, China
| | - Xinyu Huang
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Ye
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
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2
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Jat MK, Mishra S, Mann HK, Bajaj R, Watanabe K, Taniguchi T, Krishnamurthy HR, Jain M, Bid A. Controlling Umklapp Scattering in a Bilayer Graphene Moiré Superlattice. NANO LETTERS 2024; 24:2203-2209. [PMID: 38345527 DOI: 10.1021/acs.nanolett.3c04223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
We present experimental findings on electron-electron scattering in two-dimensional moiré heterostructures with a tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around the half-full point, the primary contribution to the resistance of these devices arises from Umklapp electron-electron (Uee) scattering, making the resistance of graphene/hBN moiré devices significantly larger than that of non-aligned devices (where Uee is forbidden). We find that the strength of Uee scattering follows a universal scaling with Fermi energy and is nonmonotonically dependent on the superlattice period. The Uee scattering can be tuned with the electric field and is affected by layer polarization of BLG. It has a strong particle-hole asymmetry; the resistance when the chemical potential is in the conduction band is significantly lower than when it is in the valence band, making the electron-doped regime more practical for potential applications.
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Affiliation(s)
- Mohit Kumar Jat
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shubhankar Mishra
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | | | - Robin Bajaj
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - H R Krishnamurthy
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Manish Jain
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Aveek Bid
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
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3
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Zainab S, Fraz S, Awan SU, Hussain D, Rizwan S, Mehmood W. Optimized time dependent exfoliation of graphite for fabrication of Graphene/GO/GrO nanocomposite based pseudo-supercapacitor. Sci Rep 2023; 13:14218. [PMID: 37648799 PMCID: PMC10469176 DOI: 10.1038/s41598-023-41309-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2023] [Accepted: 08/24/2023] [Indexed: 09/01/2023] Open
Abstract
High capacitance devices (Supercapacitors) fabricated using two-dimensional materials such as Graphene and its composites are attracting great attention of the research community, recently. Synthesis of 2D materials and their composites with high quality is desirable for the fabrication of 2D materials-based supercapacitors. Ultrasonic Assisted Liquid Phase Exfoliation (UALPE) is one of the widely used techniques for the synthesis of graphene. In this article, we report the effect of variation in sonication time on the exfoliation of graphite powder to extract a sample with optimal properties well suited for supercapacitors applications. Three different graphite powders (hereafter termed as sample A, sample B, and sample C) were sonicated for duration of 24 h, 48 h and 72 h at 60 °C. The exfoliation of graphite powder into graphene, GO and GrO was studied using XRD and RAMAN. AFM and SEM were further used to examine the layered structure of the synthesized nanocomposite. UV-visible spectroscopy and cyclic voltammetery were used to measure the band gaps, and capacitive behavior of the samples. Sample B exhibited a remarkable specific capacitance of 534.53 F/g with charge specific capacity of 530.1 C/g at 1 A/g and energy density of 66 kW/kg. Power density varied 0.75 kWh/kg to 7.5 kWh/kg for a variation in current density from 1 to 10 A/g. Sample B showed capacitive retention of 94%, the lowest impedance and highest degree of exfoliation and conductivity as compared to the other two samples.
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Affiliation(s)
- Sana Zainab
- Department of Electrical Engineering, NUST College of Electrical and Mechanical Engineering, National University of Sciences and Technology (NUST), Islamabad, 54000, Pakistan
| | - Sajal Fraz
- Department of Electrical Engineering, NUST College of Electrical and Mechanical Engineering, National University of Sciences and Technology (NUST), Islamabad, 54000, Pakistan
| | - Saif Ullah Awan
- Department of Electrical Engineering, NUST College of Electrical and Mechanical Engineering, National University of Sciences and Technology (NUST), Islamabad, 54000, Pakistan.
| | - Danish Hussain
- Department of Mechatronics Engineering, NUST College of Electrical and Mechanical Engineering, National University of Sciences and Technology (NUST), Islamabad, 54000, Pakistan.
| | - Syed Rizwan
- Physics Characterization and Simulations Lab, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), Islamabad, 54000, Pakistan
| | - Waqar Mehmood
- Material Synthesis & Characterizations (MSC) Laboratory, Department of Physics, Fatima Jinnah Women University (FJWU), The Mall, Rawalpindi, 46000, Pakistan
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4
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Demin VA, Chernozatonskii LA. Diamane-like Films Based on Twisted G/BN Bilayers: DFT Modelling of Atomic Structures and Electronic Properties. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:841. [PMID: 36903720 PMCID: PMC10004773 DOI: 10.3390/nano13050841] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 02/21/2023] [Accepted: 02/22/2023] [Indexed: 06/18/2023]
Abstract
Diamanes are unique 2D carbon materials that can be obtained by the adsorption of light atoms or molecular groups onto the surfaces of bilayer graphene. Modification of the parent bilayers, such as through twisting of the layers and the substitution of one of the layers with BN, leads to drastic changes in the structure and properties of diamane-like materials. Here, we present the results of the DFT modelling of new stable diamane-like films based on twisted Moiré G/BN bilayers. The set of angles at which this structure becomes commensurate was found. We used two commensurate structures with twisted angles of θ = 10.9° and θ = 25.3° with the smallest period as the base for the formation of the diamane-like material. Previous theoretical investigations did not take into account the incommensurability of graphene and boron nitride monolayers when considering diamane-like films. The double-sided hydrogenation or fluorination of Moiré G/BN bilayers and the following interlayer covalent bonding led to the opening of a gap up to 3.1 eV, which was lower than the corresponding values of h-BN and c-BN. The considered G/BN diamane-like films offer great potential in the future for a variety of engineering applications.
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Jiang C, Chen L, Wang H, Chen C, Wang X, Kong Z, Wang Y, Wang H, Xie X. Increasing coverage of mono-layer graphene grown on hexagonal boron nitride. NANOTECHNOLOGY 2023; 34:165601. [PMID: 36669199 DOI: 10.1088/1361-6528/acb4f5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 01/20/2023] [Indexed: 06/17/2023]
Abstract
Graphene sitting on hexagonal boron nitride (h-BN) always exhibits excellent electrical properties. And the properties of graphene onh-BN are often dominated by its domain size and boundaries. Chemical vapor deposition (CVD) is a promising approach to achieve large size graphene crystal. However, the CVD growth of graphene onh-BN still faces challenges in increasing coverage of monolayer graphene because of a weak control on nucleation and vertical growth. Here, an auxiliary source strategy is adapted to increase the nucleation density of graphene onh-BN and synthesis continuous graphene films. It is found that both silicon carbide and organic polymer e.g. methyl methacrylate can assist the nucleation of graphene, and then increases the coverage of graphene onh-BN. By optimizing the growth temperature, vertical accumulation of graphitic materials can be greatly suppressed. This work provides an effective approach for preparing continuous graphene film onh-BN, and may bring a new sight for the growth of high quality graphene.
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Affiliation(s)
- Chengxin Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Lingxiu Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, People's Republic of China
| | - Huishan Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiujun Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ziqiang Kong
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yibo Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, People's Republic of China
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6
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Gao X, Urbakh M, Hod O. Stick-Slip Dynamics of Moiré Superstructures in Polycrystalline 2D Material Interfaces. PHYSICAL REVIEW LETTERS 2022; 129:276101. [PMID: 36638291 DOI: 10.1103/physrevlett.129.276101] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2022] [Accepted: 12/06/2022] [Indexed: 06/17/2023]
Abstract
A new frictional mechanism, based on collective stick-slip motion of moiré superstructures across polycrystalline two-dimensional material interfaces, is predicted. The dissipative stick-slip behavior originates from an energetic bistability between low- and high-commensurability configurations of large-scale moiré superstructures. When the grain boundary separates between grains of small and large interfacial twist angle, the corresponding moiré periods are significantly different, resulting in forbidden grain boundary crossing of the moiré superstructures during shear induced motion. For small twist angle grains, where the moiré periods are much larger than the lattice constant, this results in multiple reflections of collective surface waves between the surrounding grain boundaries. In combination with the individual grain boundary dislocation snap-through buckling mechanism dominating at the low normal load regime, the friction exhibits nonmonotonic behavior with the normal load. While the discovered phenomenon is demonstrated for h-BN/graphene polycrystalline junctions, it is expected to be of general nature and occur in many other large-scale layered material interfaces.
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Affiliation(s)
- Xiang Gao
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Michael Urbakh
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Oded Hod
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
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7
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Kim S, Moon D, Jeon BR, Yeon J, Li X, Kim S. Accurate Atomic-Scale Imaging of Two-Dimensional Lattices Using Atomic Force Microscopy in Ambient Conditions. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1542. [PMID: 35564252 PMCID: PMC9104726 DOI: 10.3390/nano12091542] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Revised: 04/28/2022] [Accepted: 04/29/2022] [Indexed: 02/04/2023]
Abstract
To facilitate the rapid development of van der Waals materials and heterostructures, scanning probe methods capable of nondestructively visualizing atomic lattices and moiré superlattices are highly desirable. Lateral force microscopy (LFM), which measures nanoscale friction based on the commonly available atomic force microscopy (AFM), can be used for imaging a wide range of two-dimensional (2D) materials, but imaging atomic lattices using this technique is difficult. Here, we examined a number of the common challenges encountered in LFM experiments and presented a universal protocol for obtaining reliable atomic-scale images of 2D materials under ambient environment. By studying a series of LFM images of graphene and transition metal dichalcogenides (TMDs), we have found that the accuracy and the contrast of atomic-scale images critically depended on several scanning parameters including the scan size and the scan rate. We applied this protocol to investigate the atomic structure of the ripped and self-folded edges of graphene and have found that these edges were mostly in the armchair direction. This finding is consistent with the results of several simulations results. Our study will guide the extensive effort on assembly and characterization of new 2D materials and heterostructures.
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Affiliation(s)
- Sunghyun Kim
- Department of Applied Physics, Hanyang University, Ansan 15588, Korea; (S.K.); (B.R.J.); (J.Y.)
| | - Donghyeon Moon
- Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Korea;
| | - Bo Ram Jeon
- Department of Applied Physics, Hanyang University, Ansan 15588, Korea; (S.K.); (B.R.J.); (J.Y.)
| | - Jegyeong Yeon
- Department of Applied Physics, Hanyang University, Ansan 15588, Korea; (S.K.); (B.R.J.); (J.Y.)
| | - Xiaoqin Li
- Center for Complex Quantum Systems, Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA;
- Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA
| | - Suenne Kim
- Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Korea;
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8
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Ko E. Hybridized bands and stacking-dependent band edges in ferromagnetic Fe 3GeTe 2/CrGeTe 3 moiré heterobilayer. Sci Rep 2022; 12:5101. [PMID: 35332178 PMCID: PMC8948266 DOI: 10.1038/s41598-022-08785-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Accepted: 03/09/2022] [Indexed: 11/08/2022] Open
Abstract
Owing to unique fundamental physics and device applications, twisted moiré physics in two-dimensional (2D) van der Waals (vdW) layered magnetic materials has recently received particular attention. We investigate magnetic vdW Fe3GeTe2 (FGT)/CrGeTe3 (CGT) moiré heterobilayers with twist angles of 11° and 30° from first-principles. We show that the moiré heterobilayer is a ferromagnetic metal with an n-type CGT layer due to the dominant spin-majority electron transfer from the FGT layer to the CGT layer, regardless of various stacked structures. The spin-majority hybridized bands between Cr and Fe bands crossing the Fermi level are found regardless of stacking. The band alignment of the CGT layer depends on the effective potential difference at the interface. We show that an external electric field perpendicular to the in-plane direction modulates the interface dipole and band edges. Our study reveals a deeper understanding of the effects of stacking, spin alignment, spin transfer, and electrostatic gating on the 2D vdW magnetic metal/semiconductor heterostructure interface.
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Affiliation(s)
- Eunjung Ko
- Korea Institute for Advanced Study, Seoul, 02455, Korea.
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9
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Yang H, Wang G, Guo Y, Wang L, Tan B, Zhang S, Zhang X, Zhang J, Shuai Y, Lin J, Jia D, Hu P. Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs. NANOSCALE 2022; 14:4204-4215. [PMID: 35234771 DOI: 10.1039/d1nr06004j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) integrated circuits based on graphene (Gr) heterostructures have emerged as next-generation electronic devices. However, it is still challenging to produce high-quality and large-area Gr/hexagonal boron nitride (h-BN) vertical heterostructures with clear interfaces and precise layer control. In this work, a two-step metallic alloy-assisted epitaxial growth approach has been demonstrated for producing wafer-scale vertical hexagonal boron nitride/graphene (h-BN/Gr) heterostructures with clear interfaces. The heterostructures maintain high uniformity while scaling up and thickening. The layer number of both h-BN and graphene can be independently controlled by tuning the growth process. Furthermore, conductance measurements confirm that electrical hysteresis disappears on h-BN/Gr field-effect transistors, which is attributed to the h-BN dielectric surface. Our work blazes a trail toward next-generation graphene-based analog devices.
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Affiliation(s)
- Huihui Yang
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Gang Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Yanming Guo
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Lifeng Wang
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Australia
| | - Biying Tan
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Shichao Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Xin Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Jia Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Yong Shuai
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Dechang Jia
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
| | - PingAn Hu
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
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10
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Zhong YJ, Huang A, Liu H, Huang XF, Jeng HT, You JS, Ortix C, Chang CH. Magnetoconductance modulations due to interlayer tunneling in radial superlattices. NANOSCALE HORIZONS 2022; 7:168-173. [PMID: 34982086 DOI: 10.1039/d1nh00449b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Radial superlattices are nanostructured materials obtained by rolling up thin solid films into spiral-like tubular structures. The formation of these "high-order" superlattices from two-dimensional crystals or ultrathin films is expected to result in a transition of transport characteristics from two-dimensional to one-dimensional. Here, we show that a transport hallmark of radial superlattices is the appearance of magnetoconductance modulations in the presence of externally applied axial magnetic fields. This phenomenon critically relies on electronic interlayer tunneling processes that activate an unconventional Aharonov-Bohm-like effect. Using a combination of density functional theory calculations and low-energy continuum models, we determine the electronic states of a paradigmatic single-material radial superlattice - a two-winding carbon nanoscroll - and indeed show momentum-dependent oscillations of the magnetic states in the axial configuration, which we demonstrate to be entirely due to hopping between the two windings of the spiral-shaped scroll.
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Affiliation(s)
- Yu-Jie Zhong
- Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan.
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan 70101, Taiwan
| | - Angus Huang
- Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan.
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- Center for Quantum Technology, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Hui Liu
- IFW Dresden and Würzburg-Dresden Cluster of Excellence ct.qmat, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - Xuan-Fu Huang
- Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Horng-Tay Jeng
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- Center for Quantum Technology, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Jhih-Shih You
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
| | - Carmine Ortix
- Institute for Theoretical Physics, Center for Extreme Matter and Emergent Phenomena, Utrecht University, Princetonplein 5, NL-3584 CC Utrecht, The Netherlands
- Dipartimento di Fisica "E. R. Caianiello", Universitá di Salerno, IT-84084 Fisciano, Italy
| | - Ching-Hao Chang
- Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan.
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan 70101, Taiwan
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11
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Juma IG, Kim G, Jariwala D, Behura SK. Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene. iScience 2021; 24:103374. [PMID: 34816107 PMCID: PMC8593561 DOI: 10.1016/j.isci.2021.103374] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Hexagonal boron nitride (h-BN) and its heterostructures with graphene are widely investigated van der Waals (vdW) quantum materials for electronics, photonics, sensing, and energy storage/transduction. However, their metal catalyst-based growth and transfer-based heterostructure assembly approaches present impediments to obtaining high-quality and wafer-scale quantum material. Here, we have presented our perspective on the synthetic strategies that involve direct nucleation of h-BN on various dielectric substrates and its heterostructures with graphene. Mechanistic understanding of direct growth of h-BN via bottom-up approaches such as (a) the chemical-interaction guided nucleation on silicon-based dielectrics, (b) surface nitridation and N+ sputtering of h-BN target on sapphire, and (c) epitaxial growth of h-BN on sapphire, among others, are reviewed. Several design methodologies are presented for the direct growth of vertical and lateral vdW heterostructures of h-BN and graphene. These complex 2D heterostructures exhibit various physical phenomena and could potentially have a range of practical applications.
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Affiliation(s)
- Isaac G. Juma
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA
- Department of Mathematics and Computer Science, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA
| | - Gwangwoo Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Sanjay K. Behura
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA
- Department of Mathematics and Computer Science, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA
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12
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Huang X, Chen L, Tang S, Jiang C, Chen C, Wang H, Shen ZX, Wang H, Cui YT. Imaging Dual-Moiré Lattices in Twisted Bilayer Graphene Aligned on Hexagonal Boron Nitride Using Microwave Impedance Microscopy. NANO LETTERS 2021; 21:4292-4298. [PMID: 33949872 DOI: 10.1021/acs.nanolett.1c00601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Moiré superlattices (MSLs) formed in van der Waals materials have become a promising platform to realize novel two-dimensional electronic states. Angle-aligned trilayer structures can form two sets of MSLs which could potentially interfere. In this work, we directly image the moiré patterns in both monolayer and twisted bilayer graphene aligned on hexagonal boron nitride (hBN), using combined scanning microwave impedance microscopy and conductive atomic force microscopy. Correlation of the two techniques reveals the contrast mechanism for the achieved ultrahigh spatial resolution (<2 nm). We observe two sets of MSLs with different periodicities in the trilayer stack. The smaller MSL breaks the 6-fold rotational symmetry and exhibits abrupt discontinuities at the boundaries of the larger MSL. Using a rigid atomic-stacking model, we demonstrate that the hBN layer considerably modifies the MSL of twisted bilayer graphene. We further analyze its effect on the reciprocal space spectrum of the dual-moiré system.
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Affiliation(s)
- Xiong Huang
- Department of Physics and Astronomy, University of California, Riverside, California 92521, United States
- Department of Materials Science and Engineering, University of California, Riverside, California 92521, United States
| | - Lingxiu Chen
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China
| | - Shujie Tang
- 2020 X-Lab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Chengxin Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Huishan Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhi-Xun Shen
- Department of Physics and Applied Physics, Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, United States
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yong-Tao Cui
- Department of Physics and Astronomy, University of California, Riverside, California 92521, United States
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13
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Cheng T, Liu Z, Liu Z, Ding F. The Mechanism of Graphene Vapor-Solid Growth on Insulating Substrates. ACS NANO 2021; 15:7399-7408. [PMID: 33749254 DOI: 10.1021/acsnano.1c00776] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Wafer-scale single-crystal graphene film directly grown on insulating substrates via the chemical vapor deposition (CVD) method is desired for building high-performance graphene-based devices. In comparison with the well-studied mechanism of graphene growth on transition metal substrates, the lack of understanding on the mechanism of graphene growth on insulating surfaces greatly hinders the progress. Here, by using first-principles calculation, we systematically explored the absorption of various carbon species CHx (x = 0, 1, 2, 3, 4) on three typical insulating substrates [h-BN, sapphire, and quartz] and reveal that graphene growth on an insulating surface is dominated by the reaction of active carbon species with the hydrogen-passivated graphene edges and thus is less sensitive to the type of the substrate. The dominating gas phase precursor, CH3, plays two key roles in graphene CVD growth on an insulating substrate: (i) to feed the graphene growth and (ii) to remove excessive hydrogen atoms from the edge of graphene. The threshold reaction barriers for the growth of graphene armchair (AC) and zigzag (ZZ) edges were calculated as 3.00 and 1.94 eV, respectively; thus the ZZ edge grows faster than the AC one. Our theory successfully explained why the circumference of a graphene island grown on insulating substrates is generally dominated by AC edges, which is a long-standing puzzle of graphene growth. In addition, the very slow graphene growth rate on an insulating substrate is calculated and agrees well with existing experimental observations. The comprehensive insights on the graphene growth on insulating surfaces at the atomic scale provide guidance on the experimental design for high-quality graphene growth on insulating substrates.
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Affiliation(s)
- Ting Cheng
- College of Chemistry and Molecular Engineering, Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, China
- Beijing Graphene Institute, Beijing 100095, China
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Korea
| | - Zhirong Liu
- College of Chemistry and Molecular Engineering, Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, China
| | - Zhongfan Liu
- College of Chemistry and Molecular Engineering, Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, China
- Beijing Graphene Institute, Beijing 100095, China
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
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14
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Ren W, Ouyang Y, Jiang P, Yu C, He J, Chen J. The Impact of Interlayer Rotation on Thermal Transport Across Graphene/Hexagonal Boron Nitride van der Waals Heterostructure. NANO LETTERS 2021; 21:2634-2641. [PMID: 33656896 DOI: 10.1021/acs.nanolett.1c00294] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Graphene/hexagonal boron nitride (h-BN) van der Waals (vdW) heterostructure has aroused great interest because of the unique Moiré pattern. In this study, we use molecular dynamics simulation to investigate the influence of the interlayer rotation angle θ on the interfacial thermal transport across graphene/h-BN heterostructure. The interfacial thermal conductance G of graphene/h-BN interface reaches 509 MW/(m2K) at 500 K without rotation, and it decreases monotonically with the increase of the rotation angle, exhibiting around 50% reduction of G with θ = 26.33°. The phonon transmission function reveals that G is dominantly contributed by the low-frequency phonons below 10 THz. Upon rotation, the surface fluctuation in the interfacial graphene layer is enhanced, and the transmission function for the low-frequency phonon is reduced with increasing θ, leading to the rotation angle-dependent G. This work uncovers the physical mechanisms for controlling interfacial thermal transport across vdW heterostructure via interlayer rotation.
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Affiliation(s)
- Weijun Ren
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab for Nanophononics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Yulou Ouyang
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab for Nanophononics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Pengfei Jiang
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab for Nanophononics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Cuiqian Yu
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab for Nanophononics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Jia He
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab for Nanophononics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Jie Chen
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab for Nanophononics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
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15
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Zhang J, Tan B, Zhang X, Gao F, Hu Y, Wang L, Duan X, Yang Z, Hu P. Atomically Thin Hexagonal Boron Nitride and Its Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000769. [PMID: 32803781 DOI: 10.1002/adma.202000769] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2020] [Revised: 05/06/2020] [Indexed: 06/11/2023]
Abstract
Atomically thin hexagonal boron nitride (h-BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D-material-based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h-BN is found to be a natural hyperbolic material in the mid-infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h-BN flakes at their proof-of-concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large-scale, high-quality, atomically thin h-BN films and heterostructures. Herein, CVD synthesis of atomically thin h-BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single-crystal h-BN film. Meanwhile, epitaxial growth of 2D materials onto h-BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h-BN and its heterostructures in optoelectronics and electronics are summarized.
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Affiliation(s)
- Jia Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Biying Tan
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Xin Zhang
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Feng Gao
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Yunxia Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Lifeng Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Xiaoming Duan
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
| | - Zhihua Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
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16
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Simion A, Candu N, Cojocaru B, Coman S, Bucur C, Forneli A, Primo A, Man IC, Parvulescu VI, Garcia H. Nanometer-thick films of antimony oxide nanoparticles grafted on defective graphenes as heterogeneous base catalysts for coupling reactions. J Catal 2020. [DOI: 10.1016/j.jcat.2020.07.033] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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17
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Wan X, Li H, Chen K, Xu J. Towards Scalable Fabrications and Applications of 2D Layered Material-based Vertical and Lateral Heterostructures. Chem Res Chin Univ 2020. [DOI: 10.1007/s40242-020-0200-5] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
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18
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Zhang L, Dong J, Guan Z, Zhang X, Ding F. The alignment-dependent properties and applications of graphene moiré superstructures on the Ru(0001) surface. NANOSCALE 2020; 12:12831-12839. [PMID: 32515760 DOI: 10.1039/d0nr02370a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The moiré superstructure of graphene on a lattice-mismatched metal substrate has profound effects on the electronic properties of graphene and can be used for many applications. Here, we propose to systematically tune the moiré superstructure of graphene on the Ru(0001) surface by rotating the graphene layer. Our study reveals two kinds of graphene moiré superstructures: (i) the ultra-flat graphene layers with height variations of less than 0.1 Å for rotation angles greater than 20° that have the same structural and electronic properties everywhere, and (ii) the highly corrugated graphene moiré superstructures with height variations from 0.4 to 1.6 Å for rotation angles less than 20°, whose electronic properties are highly modulated by the interaction with the substrate. Moreover, these rotated graphene moiré superstructures can serve as templates to produce matrices of size-tunable metal clusters from a few to ∼100 atoms. This study reveals the causes of the structural fluctuation of moiré superstructures of graphene on the transition metal surface and suggests a pathway to tune graphene's electronic properties for various applications.
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Affiliation(s)
- Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Korea.
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19
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Deng XZ, Zhang JR, Zhao YQ, Yu ZL, Yang JL, Cai MQ. The energy band engineering for the high-performance infrared photodetectors constructed by CdTe/MoS 2 heterojunction. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:065004. [PMID: 31470426 DOI: 10.1088/1361-648x/ab4013] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Recently, the traditional infrared photodetectors (PDs) shows limited application in various areas, due to the narrow band-gap, high cost and even complex manufacturing process. In this situation, scientist have paid much attention to achieve the ultra broadband PDs from the deep ultraviolet to the near infrared. The energy band engineering for two-dimensional (2D) van der Waals heterojunction with free chemical dangling bonds is an effective method to fabricate High-performance Photodetectors. In this work, we employ density functional calculation to construct a type-II CdTe/MoS2 heterostructure and calculate its electronic properties. The results reveal that the CdTe/MoS2 has the narrow band gap of 0.64 eV and electrons transfer from the CdTe to MoS2 layer, which promotes the separation of photogenerated carriers and enhance the photoelectron conversion efficiency. Driven by the smaller band gap, it can respond to near infrared, visible and ultraviolet light, demonstrating it the promising application for solar cell. Furthermore, the analysis of molecules adsorption and band edge alignment indicates that the CdTe/MoS2 is prone to capture H2O and release the H2 molecules, which is conductive to the photocatalytic water splitting for hydrogen generation. Our work suggests that the CdTe/MoS2 heterostructure is a potential candidate as a solar cell and even photocatalyst, and also provides a new sight for experimental and theoretical research to design a highly efficient device.
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Affiliation(s)
- Xi-Zi Deng
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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20
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Abdelsalam H, O. Younis W, Saroka VA, Teleb NH, Yunoki S, Zhang Q. Interaction of hydrated metals with chemically modified hexagonal boron nitride quantum dots: wastewater treatment and water splitting. Phys Chem Chem Phys 2020; 22:2566-2579. [DOI: 10.1039/c9cp06823f] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The electronic and adsorption properties of chemically modified square hexagonal boron nitride quantum dots are investigated using density functional theory calculations.
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Affiliation(s)
- H. Abdelsalam
- School of Materials Science and Engineering
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
- Theoretical Physics Department
| | - W. O. Younis
- Vice Presidency for Postgraduate Studies and Scientific Research
- Imam Abdulrahman Bin Faisal University
- Dammam
- Saudi Arabia
| | - V. A. Saroka
- Institute for Nuclear Problems
- Belarusian State University
- 220030 Minsk
- Belarus
- Center for Quantum Spintronics
| | - N. H. Teleb
- Electron Microscope and Thin Films Department
- National Research Centre
- Giza
- Egypt
| | - S. Yunoki
- Computational Condensed Matter Physics Laboratory
- RIKEN
- Wako
- Japan
| | - Q. Zhang
- School of Materials Science and Engineering
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
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21
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Mandelli D, Ouyang W, Urbakh M, Hod O. The Princess and the Nanoscale Pea: Long-Range Penetration of Surface Distortions into Layered Materials Stacks. ACS NANO 2019; 13:7603-7609. [PMID: 31276373 DOI: 10.1021/acsnano.9b00645] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The penetration of moiré out-of-plane distortions, formed at the heterogeneous interface of graphene and hexagonal boron nitride (h-BN), into the layered h-BN stack is investigated. For aligned contacts, the estimated characteristic penetration length of ∼4.7 nm suggests that even at the far surface of a ∼25 h-BN layer thick slab stacked atop the contact, a corrugation of ∼0.1 Å, well within experimental resolution, should still be clearly evident. The penetration length is found to strongly reduce with increasing misalignment angle of the graphene/h-BN junction, where the effect of thermal fluctuations conceals the moiré-induced corrugation in the bulk. These results can be rationalized by continuum elastic theory arguments for anisotropic media. Our findings, which are expected to generally apply for layered heterojunctions, may serve as a route to control the surface corrugation, adhesive properties, and tribological characteristics of two-dimensional materials.
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Affiliation(s)
- Davide Mandelli
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science , Tel Aviv University , Tel Aviv 6997801 , Israel
| | - Wengen Ouyang
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science , Tel Aviv University , Tel Aviv 6997801 , Israel
| | - Michael Urbakh
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science , Tel Aviv University , Tel Aviv 6997801 , Israel
| | - Oded Hod
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science , Tel Aviv University , Tel Aviv 6997801 , Israel
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22
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Sajjad M, Makarov V, Mendoza F, Sultan MS, Aldalbahi A, Feng PX, Jadwisienczak WM, Weiner BR, Morell G. Synthesis, Characterization and Fabrication of Graphene/Boron Nitride Nanosheets Heterostructure Tunneling Devices. NANOMATERIALS 2019; 9:nano9070925. [PMID: 31252619 PMCID: PMC6669619 DOI: 10.3390/nano9070925] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2019] [Revised: 06/20/2019] [Accepted: 06/21/2019] [Indexed: 11/16/2022]
Abstract
Various types of 2D/2D prototype devices based on graphene (G) and boron nitride nanosheets (BNNS) were fabricated to study the charge tunneling phenomenon pertinent to vertical transistors for digital and high frequency electronics. Specifically, G/BNNS/metal, G/SiO2, and G/BNNS/SiO2 heterostructures were investigated under direct current (DC-bias) conditions at room temperature. Bilayer graphene and BNNS were grown separately and transferred subsequently onto the substrates to fabricate 2D device architectures. High-resolution transmission electron microscopy confirmed the bilayer graphene structure and few layer BNNS sheets having a hexagonal B3-N3 lattice. The current vs voltage I(V) data for the G/BNNS/Metal devices show Schottky barrier characteristics with very low forward voltage drop, Fowler-Nordheim behavior, and 10−4 Ω/sq. sheet resistance. This result is ascribed to the combination of fast electron transport within graphene grains and out-of-plane tunneling in BNNS that circumvents grain boundary resistance. A theoretical model based on electron tunneling is used to qualitatively describe the behavior of the 2D G/BNNS/metal devices.
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Affiliation(s)
- Muhammad Sajjad
- Department of Physics, Engineering and Astronomy, Austin Peay State University, Clarksville, TN 37040, USA.
- Institute for Functional Nanomaterials, University of Puerto Rico, San Juan Puerto Rico, PR 00936, USA.
| | - Vladimir Makarov
- Institute for Functional Nanomaterials, University of Puerto Rico, San Juan Puerto Rico, PR 00936, USA
- Department of Physics, University of Puerto Rico, San Juan Puerto Rico, PR 00936, USA
| | - Frank Mendoza
- Institute for Functional Nanomaterials, University of Puerto Rico, San Juan Puerto Rico, PR 00936, USA
| | - Muhammad S Sultan
- Department of Physics, University of Puerto Rico, San Juan Puerto Rico, PR 00936, USA
| | - Ali Aldalbahi
- King Abdullah Istitute for Nanotechnology, Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Peter X Feng
- Department of Physics, University of Puerto Rico, San Juan Puerto Rico, PR 00936, USA
| | - Wojciech M Jadwisienczak
- School of Electrical Engineering and Computer Science, Ohio University, Athens, Ohio, OH 45701-2979, USA
| | - Brad R Weiner
- Institute for Functional Nanomaterials, University of Puerto Rico, San Juan Puerto Rico, PR 00936, USA
- Department of Chemistry, University of Puerto Rico, San Juan Puerto Rico, PR 00936, USA
| | - Gerardo Morell
- Institute for Functional Nanomaterials, University of Puerto Rico, San Juan Puerto Rico, PR 00936, USA
- Department of Physics, University of Puerto Rico, San Juan Puerto Rico, PR 00936, USA
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23
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Tan C, Tang M, Wu J, Liu Y, Li T, Liang Y, Deng B, Tan Z, Tu T, Zhang Y, Liu C, Chen JH, Wang Y, Peng H. Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors. NANO LETTERS 2019; 19:2148-2153. [PMID: 30835131 DOI: 10.1021/acs.nanolett.9b00381] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Emerging two-dimensional (2D) semiconducting materials serve as promising alternatives for next-generation digital electronics and optoelectronics. However, large-scale 2D semiconductor films synthesized so far are typically polycrystalline with defective grain boundaries that could degrade their performance. Here, for the first time, wafer-size growth of a single-crystal Bi2O2Se film, which is a novel air-stable 2D semiconductor with high mobility, was achieved on insulating perovskite oxide substrates [SrTiO3, LaAlO3, (La, Sr)(Al, Ta)O3]. The layered Bi2O2Se epilayer exhibits perfect lattice matching and strong interaction with perovskite oxide substrates, which enable unidirectional alignment and seamless mergence of multiple seeds into single-crystal continuous films free of detrimental grain boundaries. The single-crystal Bi2O2Se thin films show excellent spatial homogeneity over the entire wafer and allow for the batch fabrication of high-performance field-effect devices with high mobilities of ∼150 cm2 V-1 s-1 at room temperature, excellent switching behavior with large on/off ratio of >105, and high drive current of ∼45 μA μm-1 at a channel length of ∼5 μm. Our work makes a step toward the practical applications of high-mobility semiconducting 2D layered materials and provides an alternative platform of oxide heterostructure to investigate novel physical phenomena.
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Affiliation(s)
- Congwei Tan
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
- Academy for Advanced Interdisciplinary Studies , Peking University , Beijing 100871 , P. R. China
| | - Min Tang
- State Key Laboratory of Silicon Materials and Center of Electron Microscopy, School of Materials Science and Engineering , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Jinxiong Wu
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Yinan Liu
- International Center for Quantum Materials, School of Physics , Peking University , Beijing 100871 , P. R. China
| | - Tianran Li
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Yan Liang
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Bing Deng
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Zhenjun Tan
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
- Academy for Advanced Interdisciplinary Studies , Peking University , Beijing 100871 , P. R. China
| | - Teng Tu
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Yichi Zhang
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Cong Liu
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Jian-Hao Chen
- International Center for Quantum Materials, School of Physics , Peking University , Beijing 100871 , P. R. China
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | - Yong Wang
- State Key Laboratory of Silicon Materials and Center of Electron Microscopy, School of Materials Science and Engineering , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
- Academy for Advanced Interdisciplinary Studies , Peking University , Beijing 100871 , P. R. China
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24
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Meng J, Wang D, Cheng L, Gao M, Zhang X. Recent progress in synthesis, properties, and applications of hexagonal boron nitride-based heterostructures. NANOTECHNOLOGY 2019; 30:074003. [PMID: 30523895 DOI: 10.1088/1361-6528/aaf301] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Featuring an absence of dangling bonds, large band gap, low dielectric constant, and excellent chemical inertness, atomically thin hexagonal boron nitride (h-BN) is considered an ideal candidate for integration with graphene and other 2D materials. During the past years, great efforts have been devoted to the research of h-BN-based heterostructures, from fundamental study to practical applications. In this review we summarize the recent progress in the synthesis, novel properties, and potential applications of h-BN-based heterostructures, especially the synthesis technique. Firstly, various approaches to the preparation of both in-plane and vertically stacked h-BN-based heterostructures are introduced in detail, including top-down strategies associated with exfoliation transfer processes and bottom-up strategies such as chemical vapor deposition (CVD)-based growth. Secondly, we discuss some novel properties arising in these heterostructures. Several promising applications in electronic and optoelectronic devices are also reviewed. Finally, we discuss the main challenges and possible research directions in this field.
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Affiliation(s)
- Junhua Meng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 & College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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Wang X, Hossain M, Wei Z, Xie L. Growth of two-dimensional materials on hexagonal boron nitride (h-BN). NANOTECHNOLOGY 2019; 30:034003. [PMID: 30444726 DOI: 10.1088/1361-6528/aaeb70] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
With its atomically smooth surface yet no dangling bond, chemical inertness and high temperature sustainability, the insulating hexagonal boron nitride (h-BN) can be an ideal substrate for two-dimensional (2D) material growth and device measurement. In this review, research progress on the chemical growth of 2D materials on h-BN has been summarized, such as chemical vapor deposition and molecular beam epitaxy of graphene and various transition metal dichalcogenides. Further, stacking of the as-grown 2D materials relative to h-BN, thermal expansion matching between the deposited materials and h-BN, electrical property of 2D materials on h-BN have been discussed in detail.
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Affiliation(s)
- Xinsheng Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
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Yola ML, Atar N. Simultaneous determination of β-agonists on hexagonal boron nitride nanosheets/multi-walled carbon nanotubes nanocomposite modified glassy carbon electrode. MATERIALS SCIENCE & ENGINEERING. C, MATERIALS FOR BIOLOGICAL APPLICATIONS 2018; 96:669-676. [PMID: 30606580 DOI: 10.1016/j.msec.2018.12.004] [Citation(s) in RCA: 57] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2018] [Revised: 10/22/2018] [Accepted: 12/02/2018] [Indexed: 01/08/2023]
Abstract
β-Agonists are illegally consumed in various products such as food and animal and effect the nutrition distribution owing to change of body fat. In addition, they result in acute poisoning and several symptoms such as muscular tremors and nervousness. A new electrochemical approach based on two-dimensional hexagonal boron nitride (2D-hBN) nanosheets decorated functionalized multi-walled carbon nanotubes (f-MWCNTs) was presented for simultaneous determination of β-agonists such as phenylethanolamine A (PEA), clenbuterol (CLE), ractopamine (RAC) and salbutamol (SAL) in urine samples. X-ray diffraction (XRD) method, Raman spectroscopy, scanning electron microscope (SEM), cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were used characterizations of nanomaterials. After that, 2D-hBN/f-MWCNTs nanocomposite modified glassy carbon electrode (GCE) was prepared for simultaneous determination of β-agonists. 1.0 × 10-12-1.0 × 10-8 M and 1.0 × 10-13 M were founded as the linearity range and the detection limit (LOD) for PEA, CLE, RAC and SAL. Finally, the prepared electrochemical sensor was used for urine sample analysis in presence of ascorbic acid (AA) and uric acid (UA).
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Affiliation(s)
- Mehmet Lütfi Yola
- Iskenderun Technical University, Faculty of Engineering and Natural Sciences, Department of Biomedical Engineering, Hatay, Turkey
| | - Necip Atar
- Pamukkale University, Faculty of Engineering, Department of Chemical Engineering, Denizli, Turkey.
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Lee JS, Choi SH, Yun SJ, Kim YI, Boandoh S, Park JH, Shin BG, Ko H, Lee SH, Kim YM, Lee YH, Kim KK, Kim SM. Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation. Science 2018; 362:817-821. [DOI: 10.1126/science.aau2132] [Citation(s) in RCA: 253] [Impact Index Per Article: 42.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/30/2018] [Accepted: 10/03/2018] [Indexed: 01/19/2023]
Abstract
Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.
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28
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Basic Concepts and Recent Advances of Crystallographic Orientation Determination of Graphene by Raman Spectroscopy. CRYSTALS 2018. [DOI: 10.3390/cryst8100375] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Graphene is a kind of typical two-dimensional material consisting of pure carbon element. The unique material shows many interesting properties which are dependent on crystallographic orientations. Therefore, it is critical to determine their crystallographic orientations when their orientation-dependent properties are investigated. Raman spectroscopy has been developed recently to determine crystallographic orientations of two-dimensional materials and has become one of the most powerful tools to characterize graphene nondestructively. This paper summarizes basic aspects of Raman spectroscopy in crystallographic orientation of graphene nanosheets, determination principles, the determination methods, and the latest achievements in the related studies.
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Kim KK, Lee HS, Lee YH. Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics. Chem Soc Rev 2018; 47:6342-6369. [PMID: 30043784 DOI: 10.1039/c8cs00450a] [Citation(s) in RCA: 52] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Among two dimensional (2D) van der Waals (vdW) layered materials such as graphene, which is used like a metal, and transition metal chalcogenides (TMdCs), which are used as semiconductors and metals, hexagonal boron nitride (hBN), which is used as an insulator, is ubiquitous as a building block to construct 2D vdW electronics for versatile tunneling devices. Monolayer and few-layer hBN films have been prepared with flake sizes of a few hundred micrometer via mechanical exfoliation and transfer methods. Another approach used to synthesize hBN films on a large scale is chemical vapor deposition (CVD). Although the single-crystal film growth of hBN on the wafer scale is the key to realizing realistic electronic applications, the various functionalities of hBN for 2D electronics are mostly limited to the microscale. Here, we review the recent progress for the large-area synthesis of hBN and other related vdW heterostructures via CVD, and the artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistances. The challenges and future perspectives for practical applications are also addressed.
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Affiliation(s)
- Ki Kang Kim
- Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul, 04320, Republic of Korea.
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30
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Summerfield A, Kozikov A, Cheng TS, Davies A, Cho YJ, Khlobystov AN, Mellor CJ, Foxon CT, Watanabe K, Taniguchi T, Eaves L, Novoselov KS, Novikov SV, Beton PH. Moiré-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers. NANO LETTERS 2018; 18:4241-4246. [PMID: 29913062 PMCID: PMC6095635 DOI: 10.1021/acs.nanolett.8b01223] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2018] [Revised: 06/13/2018] [Indexed: 05/27/2023]
Abstract
Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered pyrolytic graphite (HOPG) substrate. This variation is attributed to a periodc modulation of the local density of states and occurs for both exfoliated hBN barriers and epitaxially grown layers. The epitaxial barriers also exhibit enhanced conductance at localized subnanometer regions which are attributed to exposure of the substrate to a nitrogen plasma source during the high temperature growth process. Our results show clearly a spatial periodicity of tunnel current due to the formation of a moiré superlattice and we argue that this can provide a mechanism for elastic scattering of charge carriers for similar interfaces embedded in graphene/hBN resonant tunnel diodes.
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Affiliation(s)
- Alex Summerfield
- School of Physics
and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Aleksey Kozikov
- School of Physics and
Astronomy and National Graphene Institute, University
of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
| | - Tin S. Cheng
- School of Physics
and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Andrew Davies
- School of Physics
and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
- School of Chemistry and Nottingham Nanoscale and Microscale Research Centre, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Yong-Jin Cho
- School of Physics
and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Andrei N. Khlobystov
- School of Chemistry and Nottingham Nanoscale and Microscale Research Centre, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Christopher J. Mellor
- School of Physics
and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - C. Thomas Foxon
- School of Physics
and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibraki 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibraki 305-0044, Japan
| | - Laurence Eaves
- School of Physics
and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Kostya S. Novoselov
- School of Physics and
Astronomy and National Graphene Institute, University
of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
| | - Sergei V. Novikov
- School of Physics
and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Peter H. Beton
- School of Physics
and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
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31
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Wang J, Namburu R, Dubey M, Dongare AM. Origins of Moiré Patterns in CVD-grown MoS 2 Bilayer Structures at the Atomic Scales. Sci Rep 2018; 8:9439. [PMID: 29930303 PMCID: PMC6013503 DOI: 10.1038/s41598-018-27582-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2018] [Accepted: 05/30/2018] [Indexed: 11/25/2022] Open
Abstract
The chemical vapor deposition (CVD)-grown two-dimensional molybdenum disulfide (MoS2) structures comprise of flakes of few layers with different dimensions. The top layers are relatively smaller in size than the bottom layers, resulting in the formation of edges/steps across adjacent layers. The strain response of such few-layer terraced structures is therefore likely to be different from exfoliated few-layered structures with similar dimensions without any terraces. In this study, the strain response of CVD-grown few-layered MoS2 terraced structures is investigated at the atomic scales using classic molecular dynamics (MD) simulations. MD simulations suggest that the strain relaxation of CVD-grown triangular terraced structures is observed in the vertical displacement of the atoms across the layers that results in the formation of Moiré patterns. The Moiré islands are observed to nucleate at the corners or edges of the few-layered structure and propagate inwards under both tensile and compressive strains. The nucleation of these islands is observed to happen at tensile strains of ~ 2% and at compressive strains of ~2.5%. The vertical displacements of the atoms and the dimensions of the Moiré islands predicted using the MD simulation are in excellent agreement with that observed experimentally.
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Affiliation(s)
- Jin Wang
- Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut, 06269, USA
| | - Raju Namburu
- Computational and Information Sciences Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Aberdeen, Maryland, 21005, USA
| | - Madan Dubey
- Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, Maryland, 20783, USA
| | - Avinash M Dongare
- Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut, 06269, USA.
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32
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Solís-Fernández P, Bissett M, Ago H. Synthesis, structure and applications of graphene-based 2D heterostructures. Chem Soc Rev 2018; 46:4572-4613. [PMID: 28691726 DOI: 10.1039/c7cs00160f] [Citation(s) in RCA: 103] [Impact Index Per Article: 17.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
With the profuse amount of two-dimensional (2D) materials discovered and the improvements in their synthesis and handling, the field of 2D heterostructures has gained increased interest in recent years. Such heterostructures not only overcome the inherent limitations of each of the materials, but also allow the realization of novel properties by their proper combination. The physical and mechanical properties of graphene mean it has a prominent place in the area of 2D heterostructures. In this review, we will discuss the evolution and current state in the synthesis and applications of graphene-based 2D heterostructures. In addition to stacked and in-plane heterostructures with other 2D materials and their potential applications, we will also cover heterostructures realized with lower dimensionality materials, along with intercalation in few-layer graphene as a special case of a heterostructure. Finally, graphene heterostructures produced using liquid phase exfoliation techniques and their applications to energy storage will be reviewed.
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Chemically induced Fermi level pinning effects of high-k dielectrics on graphene. Sci Rep 2018; 8:2992. [PMID: 29445202 PMCID: PMC5813236 DOI: 10.1038/s41598-018-21055-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2017] [Accepted: 01/24/2018] [Indexed: 11/27/2022] Open
Abstract
High-k materials such as Al2O3 and HfO2 are widely used as gate dielectrics in graphene devices. However, the effective work function values of metal gate in graphene FET are significantly deviated from their vacuum work function, which is similar to the Fermi level pinning effect observed in silicon MOSFETs with high-k dielectric. The degree of deviation represented by a pinning factor was much worse with HfO2 (pinning factor (S) = 0.19) than with Al2O3 (S = 0.69). We propose that the significant pinning-like behaviors induced by HfO2 are correlated with the oxygen exchange reactions occurred at the interface of graphene and HfO2.
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Davies A, Albar JD, Summerfield A, Thomas JC, Cheng TS, Korolkov VV, Stapleton E, Wrigley J, Goodey NL, Mellor CJ, Khlobystov AN, Watanabe K, Taniguchi T, Foxon CT, Eaves L, Novikov SV, Beton PH. Lattice-Matched Epitaxial Graphene Grown on Boron Nitride. NANO LETTERS 2018; 18:498-504. [PMID: 29211487 DOI: 10.1021/acs.nanolett.7b04453] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band gap but requires the formation of highly strained material and has not hitherto been realized. We demonstrate that aligned, lattice-matched graphene can be grown by molecular beam epitaxy using substrate temperatures in the range 1600-1710 °C and coexists with a topologically modified moiré pattern with regions of strained graphene which have giant moiré periods up to ∼80 nm. Raman spectra reveal narrow red-shifted peaks due to isotropic strain, while the giant moiré patterns result in complex splitting of Raman peaks due to strain variations across the moiré unit cell. The lattice-matched graphene has a lower conductance than both the Frenkel-Kontorova-type domain walls and also the topological defects where they terminate. We relate these results to theoretical models of band gap formation in graphene/boron nitride heterostructures.
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Affiliation(s)
- Andrew Davies
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
- School of Chemistry, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Juan D Albar
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Alex Summerfield
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - James C Thomas
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Tin S Cheng
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Vladimir V Korolkov
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Emily Stapleton
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - James Wrigley
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Nathan L Goodey
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Christopher J Mellor
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Andrei N Khlobystov
- School of Chemistry, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - C Thomas Foxon
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Laurence Eaves
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Sergei V Novikov
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Peter H Beton
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
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35
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Bawari S, Kaley NM, Pal S, Vineesh TV, Ghosh S, Mondal J, Narayanan TN. On the hydrogen evolution reaction activity of graphene–hBN van der Waals heterostructures. Phys Chem Chem Phys 2018; 20:15007-15014. [DOI: 10.1039/c8cp01020j] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This work demonstrates the hydrogen evolution reaction from graphene–hBN van der Waals structures, where individual layers are inert towards this reaction.
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Affiliation(s)
- Sumit Bawari
- Tata Institute of Fundamental Research – Hyderabad
- Hyderabad – 500 107
- India
| | - Nisheal M. Kaley
- Tata Institute of Fundamental Research – Hyderabad
- Hyderabad – 500 107
- India
| | - Shubhadeep Pal
- Tata Institute of Fundamental Research – Hyderabad
- Hyderabad – 500 107
- India
| | | | - Shamasree Ghosh
- Tata Institute of Fundamental Research – Hyderabad
- Hyderabad – 500 107
- India
| | - Jagannath Mondal
- Tata Institute of Fundamental Research – Hyderabad
- Hyderabad – 500 107
- India
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36
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Niu T, Jiang Z, Zhu Y, Zhou G, van Spronsen MA, Tenney SA, Boscoboinik JA, Stacchiola D. Oxygen-Promoted Methane Activation on Copper. J Phys Chem B 2017; 122:855-863. [DOI: 10.1021/acs.jpcb.7b06956] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Tianchao Niu
- Center
for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
| | - Zhao Jiang
- Department
of Chemical Engineering, Xi’an Jiaotong University, Xi’an, 710049, China
| | - Yaguang Zhu
- Department of Mechanical Engineering & Materials Science and Engineering Program, State University of New York, Binghamton, New York 13902, United States
| | - Guangwen Zhou
- Department of Mechanical Engineering & Materials Science and Engineering Program, State University of New York, Binghamton, New York 13902, United States
| | - Matthijs A. van Spronsen
- Department
of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Samuel A. Tenney
- Center
for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - J. Anibal Boscoboinik
- Center
for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Dario Stacchiola
- Center
for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
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Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates. Sci Rep 2017; 7:15700. [PMID: 29146916 PMCID: PMC5691050 DOI: 10.1038/s41598-017-15610-3] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2017] [Accepted: 10/30/2017] [Indexed: 11/09/2022] Open
Abstract
Growth of X-enes, such as silicene, germanene and stanene, requires passivated substrates to ensure the survival of their exotic properties. Using first-principles methods, we study as-grown graphene on polar SiC surfaces as suitable substrates. Trilayer combinations with coincidence lattices with large hexagonal unit cells allow for strain-free group-IV monolayers. In contrast to the Si-terminated SiC surface, van der Waals-bonded honeycomb X-ene/graphene bilayers on top of the C-terminated SiC substrate are stable. Folded band structures show Dirac cones of the overlayers with small gaps of about 0.1 eV in between. The topological invariants of the peeled-off X-ene/graphene bilayers indicate the presence of topological character and the existence of a quantum spin Hall phase.
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38
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Dankert A, Karpiak B, Dash SP. Hall sensors batch-fabricated on all-CVD h-BN/graphene/h-BN heterostructures. Sci Rep 2017; 7:15231. [PMID: 29123124 PMCID: PMC5680335 DOI: 10.1038/s41598-017-12277-8] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2017] [Accepted: 09/06/2017] [Indexed: 11/09/2022] Open
Abstract
The two-dimensional (2D) material graphene is highly promising for Hall sensors due to its potential of having high charge carrier mobility and low carrier concentration at room temperature. Here, we report the scalable batch-fabrication of magnetic Hall sensors on graphene encapsulated in hexagonal boron nitride (h-BN) using commercially available large area CVD grown materials. The all-CVD grown h-BN/graphene/h-BN van der Waals heterostructures were prepared by layer transfer technique and Hall sensors were batch-fabricated with 1D edge metal contacts. The current-related Hall sensitivities up to 97 V/AT are measured at room temperature. The Hall sensors showed robust performance over the wafer scale with stable characteristics over six months in ambient environment. This work opens avenues for further development of growth and fabrication technologies of all-CVD 2D material heterostructures and allows further improvements in Hall sensor performance for practical applications.
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Affiliation(s)
- André Dankert
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden.
| | - Bogdan Karpiak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden
| | - Saroj P Dash
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden.
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39
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Babenko V, Lane G, Koos AA, Murdock AT, So K, Britton J, Meysami SS, Moffat J, Grobert N. Time dependent decomposition of ammonia borane for the controlled production of 2D hexagonal boron nitride. Sci Rep 2017; 7:14297. [PMID: 29085080 PMCID: PMC5662770 DOI: 10.1038/s41598-017-14663-8] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/30/2017] [Accepted: 10/13/2017] [Indexed: 11/09/2022] Open
Abstract
Ammonia borane (AB) is among the most promising precursors for the large-scale synthesis of hexagonal boron nitride (h-BN) by chemical vapour deposition (CVD). Its non-toxic and non-flammable properties make AB particularly attractive for industry. AB decomposition under CVD conditions, however, is complex and hence has hindered tailored h-BN production and its exploitation. To overcome this challenge, we report in-depth decomposition studies of AB under industrially safe growth conditions. In situ mass spectrometry revealed a time and temperature-dependent release of a plethora of NxBy-containing species and, as a result, significant changes of the N:B ratio during h-BN synthesis. Such fluctuations strongly influence the formation and morphology of 2D h-BN. By means of in situ gas monitoring and regulating the precursor temperature over time we achieve uniform release of volatile chemical species over many hours for the first time, paving the way towards the controlled, industrially viable production of h-BN.
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Affiliation(s)
- Vitaliy Babenko
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
- Centre for Advanced Photonics and Electronics, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK
| | - George Lane
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
- Department of Chemistry, University of Cambridge, Lensfield Rd, Cambridge, CB2 1EW, UK
| | - Antal A Koos
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
- Nanostructures Department, Institute of Technical Physics and Materials Science, Centre for Energy Research, PO Box 49, H-1525, Budapest, Hungary
| | - Adrian T Murdock
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
- CSIRO Manufacturing, P.O. Box 218, Bradfield Road, Lindfield, New South Wales, 2070, Australia
| | - Karwei So
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
| | - Jude Britton
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
- Renishaw New Mills, Wotton-under-Edge, Gloucestershire, GL12 8JR, UK
| | | | - Jonathan Moffat
- Oxford Instruments Asylum Research, High Wycombe, HP12 3SE, UK
| | - Nicole Grobert
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK.
- Williams Advanced Engineering, Grove, Oxfordshire, OX12 0DQ, UK.
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40
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Chen L, Wang H, Tang S, He L, Wang HS, Wang X, Xie H, Wu T, Xia H, Li T, Xie X. Edge control of graphene domains grown on hexagonal boron nitride. NANOSCALE 2017; 9:11475-11479. [PMID: 28580985 DOI: 10.1039/c7nr02578e] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene domains on hexagonal boron nitride (h-BN) by modifying the ratio of working-gases. Edge directions were determined with the help of both moiré patterns and atomic-resolution images obtained via atomic force microscopy measurements. It is believed that the variation of graphene edges is mainly attributed to different growth rates of armchair and zigzag edges. This work demonstrates a potential approach to fabricate smooth-edge graphene ribbons on h-BN.
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Affiliation(s)
- Lingxiu Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
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41
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Kim NY, Jeong HY, Kim JH, Kim G, Shin HS, Lee Z. Evidence of Local Commensurate State with Lattice Match of Graphene on Hexagonal Boron Nitride. ACS NANO 2017; 11:7084-7090. [PMID: 28613831 DOI: 10.1021/acsnano.7b02716] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Transition to a commensurate state changes the local symmetry periodicity on two-dimensional van der Waals superstructures, evoking distinctive properties far beyond individual layers. We investigate the morphology of moiré superstructures of graphene on hexagonal boron nitride (hBN) with a low twist angle (≈0°) through moiré fringe analyses with dark field transmission electron microscopy. The moiré fringes exhibit local variation, suggesting that the interaction between graphene and hBN depends on the stacking configuration and that local transition to the commensurate state occurs through the reduced crystalline mismatch (that is, by lattice stretching and twisting on the graphene lattices). This moiré superstructure analysis suggests an inventive method for studying the interaction between stacked van der Waals layers and for discerning the altered electronic and optical properties of graphene on hBN superstructures with a low twist angle, even at low magnification.
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Affiliation(s)
- Na Yeon Kim
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | | | | | | | - Hyeon Suk Shin
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
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42
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Vargas A, Liu F, Lane C, Rubin D, Bilgin I, Hennighausen Z, DeCapua M, Bansil A, Kar S. Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi 2Se 3 and MoS 2 atomic layers. SCIENCE ADVANCES 2017; 3:e1601741. [PMID: 28740860 PMCID: PMC5510971 DOI: 10.1126/sciadv.1601741] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2016] [Accepted: 06/09/2017] [Indexed: 05/20/2023]
Abstract
Vertical stacking is widely viewed as a promising approach for designing advanced functionalities using two-dimensional (2D) materials. Combining crystallographically commensurate materials in these 2D stacks has been shown to result in rich new electronic structure, magnetotransport, and optical properties. In this context, vertical stacks of crystallographically incommensurate 2D materials with well-defined crystallographic order are a counterintuitive concept and, hence, fundamentally intriguing. We show that crystallographically dissimilar and incommensurate atomically thin MoS2 and Bi2Se3 layers can form rotationally aligned stacks with long-range crystallographic order. Our first-principles theoretical modeling predicts heterocrystal electronic band structures, which are quite distinct from those of the parent crystals, characterized with an indirect bandgap. Experiments reveal striking optical changes when Bi2Se3 is stacked layer by layer on monolayer MoS2, including 100% photoluminescence (PL) suppression, tunable transmittance edge (1.1→0.75 eV), suppressed Raman, and wide-band evolution of spectral transmittance. Disrupting the interface using a focused laser results in a marked the reversal of PL, Raman, and transmittance, demonstrating for the first time that in situ manipulation of interfaces can enable "reconfigurable" 2D materials. We demonstrate submicrometer resolution, "laser-drawing" and "bit-writing," and novel laser-induced broadband light emission in these heterocrystal sheets.
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Affiliation(s)
- Anthony Vargas
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Fangze Liu
- Department of Physics, Northeastern University, Boston, MA 02115, USA
- Materials Synthesis and Integrated Devices Group (MPA-11), Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Christopher Lane
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Daniel Rubin
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Ismail Bilgin
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | | | - Matthew DeCapua
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
- Corresponding author. (A.B.); (S.K.)
| | - Swastik Kar
- Department of Physics, Northeastern University, Boston, MA 02115, USA
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, PR China
- Corresponding author. (A.B.); (S.K.)
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43
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Kwieciñski W, Sotthewes K, Poelsema B, Zandvliet HJW, Bampoulis P. Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets. J Colloid Interface Sci 2017; 505:776-782. [PMID: 28666222 DOI: 10.1016/j.jcis.2017.06.076] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2017] [Revised: 06/20/2017] [Accepted: 06/22/2017] [Indexed: 01/06/2023]
Abstract
Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800°C. The temperature assisted decomposition of ethylene takes place mainly at molybdenum disulfide step edges. The carbon atoms intercalate at this high temperature, and during the deposition process, through defects of the molybdenum disulfide surface such as steps and wrinkles. Post growth atomic force microscopy images reveal that circular flat graphene islands have grown at a high yield. They consist of two graphene layers stacked on top of each other with a total thickness of 0.74nm. Our results demonstrate direct, simple and high yield growth of graphene/molybdenum disulfide heterostructures, which can be of high importance in future nanoelectronic and optoelectronic applications.
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Affiliation(s)
- Wojciech Kwieciñski
- Physics of Interfaces and Nanomaterials, MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands; Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland.
| | - Kai Sotthewes
- Physics of Interfaces and Nanomaterials, MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
| | - Bene Poelsema
- Physics of Interfaces and Nanomaterials, MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
| | - Harold J W Zandvliet
- Physics of Interfaces and Nanomaterials, MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
| | - Pantelis Bampoulis
- Physics of Interfaces and Nanomaterials, MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands; Physics of Fluids and J.M. Burgers Centre for Fluid Mechanics, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
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44
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Zhang Z, Hu S, Chen J, Li B. Hexagonal boron nitride: a promising substrate for graphene with high heat dissipation. NANOTECHNOLOGY 2017; 28:225704. [PMID: 28492182 DOI: 10.1088/1361-6528/aa6e49] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Supported graphene on a standard SiO2 substrate exhibits unsatisfactory heat dissipation performance that is far inferior to the intrinsic ultrahigh thermal conductivity of a suspended sample. A suitable substrate for enhancing thermal transport in supported graphene is highly desirable for the development of graphene devices for thermal management. By using molecular dynamics simulations, here we demonstrate that bulk hexagonal boron nitride (h-BN) is a more appealing substrate to achieve high performance heat dissipation in supported graphene. Notable length dependence and high thermal conductivity are observed in h-BN-supported single-layer graphene (SLG), suggesting that the thermal transport characteristics are close to that of suspended SLG. At room temperature, the thermal conductivity of h-BN-supported SLG is as high as 1347.3 ± 20.5 Wm-1 K-1, which is about 77% of that for the suspended case, and is more than twice that of the SiO2-supported SLG. Furthermore, we find that the smooth and atomically flat h-BN substrate gives rise to a regular and weak stress distribution in graphene, resulting in a less affected phonon relaxation time and dominant phonon mean free path. We also find that stacking and rotation significantly impacts the thermal transport in h-BN-supported graphene. Our study provides valuable insights towards the design of graphene devices on realistic substrate for high performance heat dissipation applications.
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Affiliation(s)
- Zhongwei Zhang
- Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, and Institute for Advanced Study, Tongji University, Shanghai 200092, People's Republic of China. China-EU Joint Lab for Nanophononics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China. Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
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45
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Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches. Nat Commun 2017; 8:14703. [PMID: 28276532 PMCID: PMC5347129 DOI: 10.1038/ncomms14703] [Citation(s) in RCA: 51] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2016] [Accepted: 01/24/2017] [Indexed: 11/08/2022] Open
Abstract
Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.
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46
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Argentero G, Mittelberger A, Reza Ahmadpour Monazam M, Cao Y, Pennycook TJ, Mangler C, Kramberger C, Kotakoski J, Geim AK, Meyer JC. Unraveling the 3D Atomic Structure of a Suspended Graphene/hBN van der Waals Heterostructure. NANO LETTERS 2017; 17:1409-1416. [PMID: 28140602 PMCID: PMC5345117 DOI: 10.1021/acs.nanolett.6b04360] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2016] [Revised: 01/31/2017] [Indexed: 05/05/2023]
Abstract
In this work we demonstrate that a free-standing van der Waals heterostructure, usually regarded as a flat object, can exhibit an intrinsic buckled atomic structure resulting from the interaction between two layers with a small lattice mismatch. We studied a freely suspended membrane of well-aligned graphene on a hexagonal boron nitride (hBN) monolayer by transmission electron microscopy (TEM) and scanning TEM (STEM). We developed a detection method in the STEM that is capable of recording the direction of the scattered electron beam and that is extremely sensitive to the local stacking of atoms. A comparison between experimental data and simulated models shows that the heterostructure effectively bends in the out-of-plane direction, producing an undulated structure having a periodicity that matches the moiré wavelength. We attribute this rippling to the interlayer interaction and also show how this affects the intralayer strain in each layer.
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Affiliation(s)
- Giacomo Argentero
- Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
| | - Andreas Mittelberger
- Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
| | | | - Yang Cao
- Centre
for Mesoscience and Nanotechnology and School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Timothy J. Pennycook
- Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
| | - Clemens Mangler
- Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
| | - Christian Kramberger
- Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
| | - Jani Kotakoski
- Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
| | - A. K. Geim
- Centre
for Mesoscience and Nanotechnology and School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Jannik C. Meyer
- Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
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47
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Muñoz R, Munuera C, Martínez JI, Azpeitia J, Gómez-Aleixandre C, García-Hernández M. Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition. 2D MATERIALS 2017; 4:015009. [PMID: 28070341 PMCID: PMC5214927 DOI: 10.1088/2053-1583/4/1/015009] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.
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Affiliation(s)
- R Muñoz
- Instituto de Ciencia de Materiales de Madrid, CSIC Madrid, 28049, Spain
| | - C Munuera
- Instituto de Ciencia de Materiales de Madrid, CSIC Madrid, 28049, Spain
| | - J I Martínez
- Instituto de Ciencia de Materiales de Madrid, CSIC Madrid, 28049, Spain
| | - J Azpeitia
- Instituto de Ciencia de Materiales de Madrid, CSIC Madrid, 28049, Spain
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48
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Wang J, Ma F, Sun M. Graphene, hexagonal boron nitride, and their heterostructures: properties and applications. RSC Adv 2017. [DOI: 10.1039/c7ra00260b] [Citation(s) in RCA: 370] [Impact Index Per Article: 52.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022] Open
Abstract
In recent years, two-dimensional atomic-level thickness crystal materials have attracted widespread interest such as graphene, hexagonal boron nitride (h-BN), silicene, germanium, black phosphorus (BP), transition metal sulfides and so on.
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Affiliation(s)
- Jingang Wang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science
- School of Mathematics and Physics
- University of Science and Technology Beijing
- Beijing
- People's Republic of China
| | - Fengcai Ma
- Department of Chemistry and Physics
- Liaoning University
- Shenyang
- People's Republic of China
| | - Mengtao Sun
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science
- School of Mathematics and Physics
- University of Science and Technology Beijing
- Beijing
- People's Republic of China
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49
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Bilayered graphene/h-BN with folded holes as new nanoelectronic materials: modeling of structures and electronic properties. Sci Rep 2016; 6:38029. [PMID: 27897237 PMCID: PMC5126688 DOI: 10.1038/srep38029] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2016] [Accepted: 11/03/2016] [Indexed: 11/08/2022] Open
Abstract
The latest achievements in 2-dimensional (2D) material research have shown the perspective use of sandwich structures in nanodevices. We demonstrate the following generation of bilayer materials for electronics and optoelectronics. The atomic structures, the stability and electronic properties of Moiré graphene (G)/h-BN bilayers with folded nanoholes have been investigated theoretically by ab-initio DFT method. These perforated bilayers with folded hole edges may present electronic properties different from the properties of both graphene and monolayer nanomesh structures. The closing of the edges is realized by C-B(N) bonds that form after folding the borders of the holes. Stable ≪round≫ and ≪triangle≫ holes organization are studied and compared with similar hole forms in single layer graphene. The electronic band structures of the considered G/BN nanomeshes reveal semiconducting or metallic characteristics depending on the sizes and edge terminations of the created holes. This investigation of the new types of G/BN nanostructures with folded edges might provide a directional guide for the future of this emerging area.
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50
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Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Sci Rep 2016; 6:34474. [PMID: 27681943 PMCID: PMC5041098 DOI: 10.1038/srep34474] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2016] [Accepted: 09/14/2016] [Indexed: 12/12/2022] Open
Abstract
We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.
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