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Chen S, Jin J, Wang W, Wang S, Du X, Wang F, Ma L, Wang J, Wang C, Zhang X, Liu Q. Thermally tunable anti-ambipolar heterojunction devices. Phys Chem Chem Phys 2024. [PMID: 39221572 DOI: 10.1039/d4cp02937b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer As0.4P0.6 and PdSe2, we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage (Vpeak) of -3 V and a peak-to-valley ratio (PVR) close to 8 × 103, and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (∼103) and a large Vpeak (∼-16 V) are obtained, while a PVR exceeding 108 has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications.
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Affiliation(s)
- Shengyao Chen
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics, School of Physics, Nankai University, Tianjin 300457, China.
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jiyou Jin
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Wenxiang Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Shu Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaoshan Du
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lijun Ma
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Junqi Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Cong Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China.
| | - Xinzheng Zhang
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics, School of Physics, Nankai University, Tianjin 300457, China.
| | - Qian Liu
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics, School of Physics, Nankai University, Tianjin 300457, China.
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
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2
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Xu T, Zhong F, Wang P, Wang Z, Ge X, Wang J, Wang H, Zhang K, Zhang Z, Zhao T, Yu Y, Luo M, Wang Y, Jiang R, Wang F, Chen F, Liu Q, Hu W. Van der Waals mid-wavelength infrared detector linear array for room temperature passive imaging. SCIENCE ADVANCES 2024; 10:eadn0560. [PMID: 39093971 PMCID: PMC11296343 DOI: 10.1126/sciadv.adn0560] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Accepted: 06/27/2024] [Indexed: 08/04/2024]
Abstract
Passive imaging for mid-wave infrared (MWIR) is resistant to atmospheric pollutants, guaranteeing image clarity and accuracy. Arrayed photodetectors can simultaneously perform radiation sensing to improve efficiency. Room temperature van der Waals (vdWs) photodetectors without lattice matching have evolved rapidly with optimized stacking methods, primarily for single-pixel devices. The urgent need to implement arrayed devices aligns with practical demands. Here, we present an 8 by 1 black phosphorus/molybdenum sulfide (BP/MoS2) vdWs photodetector linear array with a fill-factor of ~77%, fabricated using a temperature-assisted sloping transfer method. The flat interface and uniform thickness facilitate carrier transport and minimize pixel nonuniformities, showing an average peak detectivity (D*) of 2.34 × 109 cm·Hz1/2·W-1 in the mid-wave infrared region. Compared to a single pixel, push-broom scanning passive imaging is eight times more efficient and further enhanced through mean filtering and fast Fourier transform filtering for strip noise correction. Our study offers guidance on vdWs arrayed devices for engineering applications.
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Affiliation(s)
- Tengfei Xu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Fang Zhong
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Jinjin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Kun Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Zhenhan Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Tiange Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China
| | - Min Luo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Ruiqi Jiang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Fansheng Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Qi Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- University of Chinese Academy of Sciences, Beijing, China
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3
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Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
Abstract
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Bowen Li
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Johnny Ho
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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Kim J, Rhee D, Jung M, Cheon GJ, Kim K, Kim JH, Park JY, Yoon J, Lim DU, Cho JH, Kim IS, Son D, Jariwala D, Kang J. Defect-Engineered Semiconducting van der Waals Thin Film at Metal-Semiconductor Interface of Field-Effect Transistors. ACS NANO 2024; 18:1073-1083. [PMID: 38100089 DOI: 10.1021/acsnano.3c10453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
The significance of metal-semiconductor interfaces and their impact on electronic device performance have gained increasing attention, with a particular focus on investigating the contact metal. However, another avenue of exploration involves substituting the contact metal at the metal-semiconductor interface of field-effect transistors with semiconducting layers to introduce additional functionalities to the devices. Here, a scalable approach for fabricating metal-oxide-semiconductor (channel)-semiconductor (interfacial layer) field-effect transistors is proposed by utilizing solution-processed semiconductors, specifically semiconducting single-walled carbon nanotubes and molybdenum disulfide, as the channel and interfacial semiconducting layers, respectively. The work function of the interfacial MoS2 is modulated by controlling the sulfur vacancy concentration through chemical treatment, which results in distinctive energy band alignments within a single device configuration. The resulting band alignments lead to multiple functionalities, including multivalued transistor characteristics and multibit nonvolatile memory (NVM) behavior. Moreover, leveraging the stable NVM properties, we demonstrate artificial synaptic devices with 88.9% accuracy of MNIST image recognition.
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Affiliation(s)
- Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dongjoon Rhee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Myeongjin Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Gang Jin Cheon
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Kangsan Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jae Hyung Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Ji Yun Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jiyong Yoon
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dong Un Lim
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - In Soo Kim
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Donghee Son
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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Obaidulla SM, Supina A, Kamal S, Khan Y, Kralj M. van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device. NANOSCALE HORIZONS 2023; 9:44-92. [PMID: 37902087 DOI: 10.1039/d3nh00310h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.
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Affiliation(s)
- Sk Md Obaidulla
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Antonio Supina
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Chair of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Sherif Kamal
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| | - Yahya Khan
- Department of Physics, Karakoram International university (KIU), Gilgit 15100, Pakistan
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
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Prasoon A, Yang H, Hambsch M, Nguyen NN, Chung S, Müller A, Wang Z, Lan T, Fontaine P, Kühne TD, Cho K, Nia AS, Mannsfeld SCB, Dong R, Feng X. On-water surface synthesis of electronically coupled 2D polyimide-MoS 2 van der Waals heterostructure. Commun Chem 2023; 6:280. [PMID: 38104228 PMCID: PMC10725426 DOI: 10.1038/s42004-023-01081-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Accepted: 12/04/2023] [Indexed: 12/19/2023] Open
Abstract
The water surface provides a highly effective platform for the synthesis of two-dimensional polymers (2DP). In this study, we present an efficient on-water surface synthesis of crystalline monolayer 2D polyimide (2DPI) through the imidization reaction between tetra (4-aminophenyl) porphyrin (M1) and perylenetracarboxylic dianhydride (M2), resulting in excellent stability and coverage over a large area (tens of cm2). We further fabricate innovative organic-inorganic hybrid van der Waals heterostructures (vdWHs) by combining with exfoliated few-layer molybdenum sulfide (MoS2). High-resolution transmission electron microscopy (HRTEM) reveals face-to-face stacking between MoS2 and 2DPI within the vdWH. This stacking configuration facilitates remarkable charge transfer and noticeable n-type doping effects from monolayer 2DPI to MoS2, as corroborated by Raman spectroscopy, photoluminescence measurements, and field-effect transistor (FET) characterizations. Notably, the 2DPI-MoS2 vdWH exhibits an impressive electron mobility of 50 cm2/V·s, signifying a substantial improvement over pristine MoS2 (8 cm2/V·s). This study unveils the immense potential of integrating 2D polymers to enhance semiconductor device functionality through tailored vdWHs, thereby opening up exciting new avenues for exploring unique interfacial physical phenomena.
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Affiliation(s)
- Anupam Prasoon
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Max Planck Institute of Microstructure Physics, Weinberg 2, Halle, D-06120, Germany
| | - Hyejung Yang
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Mike Hambsch
- Center for Advancing Electronics Dresden (CFAED) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01062, Dresden, Germany
| | - Nguyen Ngan Nguyen
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Max Planck Institute of Microstructure Physics, Weinberg 2, Halle, D-06120, Germany
| | - Sein Chung
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Alina Müller
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Zhiyong Wang
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Max Planck Institute of Microstructure Physics, Weinberg 2, Halle, D-06120, Germany
| | - Tianshu Lan
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Max Planck Institute of Microstructure Physics, Weinberg 2, Halle, D-06120, Germany
| | - Philippe Fontaine
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190, Saint-Aubin, France
| | - Thomas D Kühne
- Center for Advanced Systems Understanding, Helmholtz-Zentrum Dresden-Rossendorf, 02826, Görlitz, Germany
- Institute of Artificial Intelligence, Chair of Computational System Sciences, Technische Universität Dresden, 01187, Dresden, Germany
| | - Kilwon Cho
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Ali Shaygan Nia
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Stefan C B Mannsfeld
- Center for Advancing Electronics Dresden (CFAED) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01062, Dresden, Germany
| | - Renhao Dong
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Key Laboratory of Colloid and Interface Chemistry of the Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, 27 Shandanan Road, Jinan, 250100, China
| | - Xinliang Feng
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany.
- Max Planck Institute of Microstructure Physics, Weinberg 2, Halle, D-06120, Germany.
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Yang AJ, Wu L, Liu Y, Zhang X, Han K, Huang Y, Li S, Loh XJ, Zhu Q, Su R, Nan CW, Renshaw Wang X. Multifunctional Magnetic Oxide-MoS 2 Heterostructures on Silicon. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302620. [PMID: 37227936 DOI: 10.1002/adma.202302620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Revised: 05/12/2023] [Indexed: 05/27/2023]
Abstract
Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La0.7 Sr0.3 MnO3 (LSMO) , a correlated manganite perovskite, and MoS2 are demonstrated on Si substrates with multiple functions. To overcome the problems due to the incompatible growth process, technologies involving freestanding LSMO membranes and van der Waals force-mediated transfer are used to fabricate the LSMO-MoS2 heterostructures. The LSMO-MoS2 heterostructures exhibit a gate-tunable rectifying behavior, based on which metal-semiconductor field-effect transistors (MESFETs) with on-off ratios of over 104 can be achieved. The LSMO-MoS2 heterostructures can function as photodiodes displaying considerable open-circuit voltages and photocurrents. In addition, the colossal magnetoresistance of LSMO endows the LSMO-MoS2 heterostructures with an electrically tunable magnetoresponse at room temperature. This work not only proves the applicability of the LSMO-MoS2 heterostructure devices on Si-based platform but also demonstrates a paradigm to create multifunctional heterostructures from materials with disparate properties.
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Affiliation(s)
- Allen Jian Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Liang Wu
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan, 650093, China
| | - Yanran Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xinyu Zhang
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan, 650093, China
| | - Kun Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Ying Huang
- State Key Laboratory of Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, China
| | - Shengyao Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xian Jun Loh
- Institute of Materials Research and Engineering (IMRE), A*STAR, 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore
| | - Qiang Zhu
- Institute of Materials Research and Engineering (IMRE), A*STAR, 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Rui Su
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 637371, Singapore
- MajuLab, International Joint Research Unit UMI 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore, 637371, Singapore
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 637371, Singapore
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8
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Jiang Y, Ma X, Wang L, Zhang J, Wang Z, Zhao R, Liu G, Li Y, Zhang C, Ma C, Qi Y, Wu L, Gao J. Observation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric p-n Heterojunctions. PHYSICAL REVIEW LETTERS 2023; 130:196801. [PMID: 37243636 DOI: 10.1103/physrevlett.130.196801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Accepted: 03/31/2023] [Indexed: 05/29/2023]
Abstract
The switchable electric polarization is usually achieved in ferroelectric materials with noncentrosymmetric structures, which opens exciting opportunities for information storage and neuromorphic computing. In another polar system of p-n junction, there exists the electric polarization at the interface due to the Fermi level misalignment. However, the resultant built-in electric field is unavailable to manipulate, thus attracting less attention for memory devices. Here, we report the interfacial polarization hysteresis (IPH) in the vertical sidewall van der Waals heterojunctions of black phosphorus and quasi-two-dimensional electron gas on SrTiO_{3}. A nonvolatile switching of electric polarization can be achieved by reconstructing the space charge region (SCR) with long-lifetime nonequilibrium carriers. The resulting electric-field controllable IPH is experimentally verified by electric hysteresis, polarization oscillation, and pyroelectric effect. Further studies confirm the transition temperature of 340 K, beyond which the IPH vanishes. The second transition is revealed with the temperature dropping below 230 K, corresponding to the sharp improvement of IPH and the freezing of SCR reconstruction. This work offers new possibilities for exploring the memory phenomena in nonferroelectric p-n heterojunctions.
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Affiliation(s)
- Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
- School of Physics, Nanjing University, Nanjing 210093, China
| | - Xinglong Ma
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Lin Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Jinlei Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Zhichao Wang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Run Zhao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Guozhen Liu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Cheng Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Chunlan Ma
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Yaping Qi
- Macau Institute of Systems Engineering, Macau University of Science and Technology, Macau 999078, China
- Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - Lin Wu
- Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
- Institute of High Performance Computing, Agency for Science, Technology, and Research 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Singapore
| | - Ju Gao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
- School for Optoelectronic Engineering, Zaozhuang University, Shandong 277160, China
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9
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Ye X, Zhang Y, Gao S, Zhao X, Xu K, Wang L, Jiang S, Shi F, Yang J, Cao Z, Chen C. High-performance diodes based on black phosphorus/carbon nanomaterial heterostructures. NANOSCALE ADVANCES 2023; 5:2427-2436. [PMID: 37143813 PMCID: PMC10153077 DOI: 10.1039/d3na00107e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2023] [Accepted: 03/13/2023] [Indexed: 05/06/2023]
Abstract
The performance of diodes, which are the basic building blocks in integrated circuits, highly depends on the materials used. Black phosphorus (BP) and carbon nanomaterials with unique structures and excellent properties can form heterostructures with favorable band matching to fully utilize their respective advantages and thus achieve high diode performance. Here, high-performance Schottky junction diodes based on a two-dimensional (2D) BP/single-walled carbon nanotube (SWCNT) film heterostructure and a BP nanoribbon (PNR) film/graphene heterostructure were investigated for the first time. The fabricated Schottky diode based on the heterostructure with the 10 nm-thick 2D BP stacked on the SWCNT film had a rectification ratio of 2978 and a low ideal factor of 1.5. The Schottky diode based on the heterostructure with the PNR film stacked on the graphene exhibited a high rectification ratio of 4455 and an ideal factor of 1.9. The high rectification ratios for both devices were attributed to the large Schottky barriers formed between the BP and carbon materials, thus leading to a small reverse current. We found that the thickness of the 2D BP in the 2D BP/SWCNT film Schottky diode and the stacking order of the heterostructure in the PNR film/graphene Schottky diode had a significant effect on the rectification ratio. Furthermore, the rectification ratio and breakdown voltage of the resulting PNR film/graphene Schottky diode were larger than those of the 2D BP/SWCNT film Schottky diode, which was attributed to the larger bandgap of the PNRs compared to the 2D BP. This study demonstrates that high-performance diodes can be achieved via the collaborative application of BP and carbon nanomaterials.
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Affiliation(s)
- Xiaowo Ye
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
| | - Yanming Zhang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
| | - Shengguang Gao
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
| | - Xiuzhi Zhao
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
| | - Ke Xu
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
| | - Long Wang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
| | - Shenghao Jiang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
| | - Fangyuan Shi
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
| | - Jingyun Yang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
| | - Zhe Cao
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
| | - Changxin Chen
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University Shanghai 200240 China
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10
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Jeong BJ, Lee B, Choi KH, Sung D, Ghods S, Lee J, Jeon J, Cho S, Lee SH, Kim BJ, Kim SI, Huh J, Yu HK, Lee JH, Choi JY. Controlled Bipolar Doping of One-Dimensional van der Waals Nb 2Pd 3Se 8. NANO LETTERS 2023. [PMID: 37099317 DOI: 10.1021/acs.nanolett.3c00159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Tailoring the electrical properties of one-dimensional (1D) van der Waals (vdW) materials is desirable for their applications toward electronic devices by exploiting their unique characteristics. However, 1D vdW materials have not been extensively investigated for modulation of their electrical properties. Here we control doping levels and types of 1D vdW Nb2Pd3Se8 over a wide energy range by immersion in AuCl3 or β-nicotinamide adenine dinucleotide (NADH) solutions, respectively. Through spectroscopic analyses and electrical characterizations, we confirm that the charges were effectively transferred to Nb2Pd3Se8, and the dopant concentration was adjusted to the immersion time. Furthermore, we make the axial p-n junction of 1D Nb2Pd3Se8 by a selective area p-doping using the AuCl3 solution, which exhibits rectifying behavior with an Iforward/Ireverse of 81 and an ideality factor of 1.2. Our findings could pave the way to more practical and functional electronic devices based on 1D vdW materials.
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Affiliation(s)
- Byung Joo Jeong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Bom Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kyung Hwan Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Dongchul Sung
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
| | - Soheil Ghods
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Junho Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiho Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sooheon Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sang Hoon Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Bum Jun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seung-Il Kim
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Joonsuk Huh
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Institute of Quantum Biophysics, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hak Ki Yu
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Hyun Lee
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Young Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
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11
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de Carvalho LC, da Lapa RS, Alexandre SS, Nunes RW. Structural and thermodynamic properties of quasi-2D Mo (1-x)W x(S, Se, Te) 2monolayer alloys: a statistical first principle study. NANOTECHNOLOGY 2023; 34:275704. [PMID: 36917839 DOI: 10.1088/1361-6528/acc406] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2022] [Accepted: 03/14/2023] [Indexed: 06/18/2023]
Abstract
In this work, we report anab initiostudy of the structural and thermodynamic properties of two-dimensional transition-metal dichalcogenides (2D-TMDC) alloys, Mo(1-x)Wx(S, Se, Te)2, using the cluster expansion framework to compute the Helmholtz free energy of alloys as a function of alloy composition and temperature, in the framework of the generalized quasi-chemical approximation. We consider alloying only on the metal sublayer. Our results indicate a weak dependence of the structural properties (lattice constants, nearest-neighbor bond lengths, and layer width) on the alloy composition (i.e. concentrations of W and Mo atoms), in line with the very similar values of the atomic radii of Mo and W atoms. A stronger dependence on the chalcogen is obtained, a trend that reflects the larger variations in atomic radii among the three chalcogen species. As a function of composition, the structural parameters we examined show similar trends, with negligible bowing (i.e. deviations from a Vegard's law interpolation between end compounds), for the three alloys. Moreover, already at 300 K the behavior of these structural features as a function of composition is very similar to that of the standard-regular-solution (SRS) high-temperature limit. In contrast, the electronic band gaps of the the three alloys as a function of composition show small but significant bowing, as high as -1% to -2% near thex= 0.5 alloy composition. Similarly to the structural features, the band gaps attain the high-temperature SRS limit already at 300 K. Regarding thermodynamic properties, we obtain negative values of the internal energy of mixing for the three alloys over the full range of compositions. Therefore, the theoretical alloying phase diagram for the three alloys is featureless, with stability of a fully-mixed alloy at all temperatures and compositions, with no miscibility gap (hence no bimodal nor spinodal decomposition lines). The thermodynamic potentials (mixing internal energy, mixing entropy, and mixing free energy) reach the high-temperature limit at ∼1000 K, the temperature range of synthesis of 2D-TMDC alloys. These trends of structural and electronic properties of the 2D-TMDC alloys are due to the very similar atomic radii and the nearly identical coordination chemistry of Mo and W. Our results are in agreement with experimental work on the alloying of Mo and W atoms, for samples of Mo(1-x)WxS2monolayer alloys, that found that the random mixed alloy is the thermodynamically stable state for this alloy, with no segregation or phase separation.
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Affiliation(s)
- Luiz Cláudio de Carvalho
- Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Caixa Postal 702, CEP 31270-901, Belo Horizonte, Minas Gerais, Brazil
| | - Rodrigo Santos da Lapa
- Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Caixa Postal 702, CEP 31270-901, Belo Horizonte, Minas Gerais, Brazil
- Instituto de Ciências da Vida e da Natureza, Universidade Federal da Integração Latino-Americana, Caixa Postal 2044, Foz do Iguaçu, Brazil
| | - Simone Silva Alexandre
- Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Caixa Postal 702, CEP 31270-901, Belo Horizonte, Minas Gerais, Brazil
| | - Ricardo Wagner Nunes
- Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Caixa Postal 702, CEP 31270-901, Belo Horizonte, Minas Gerais, Brazil
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12
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Fu N, Zhang J, He Y, Lv X, Guo S, Wang X, Zhao B, Chen G, Wang L. High-Sensitivity 2D MoS 2/1D MWCNT Hybrid Dimensional Heterostructure Photodetector. SENSORS (BASEL, SWITZERLAND) 2023; 23:3104. [PMID: 36991815 PMCID: PMC10056868 DOI: 10.3390/s23063104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 03/10/2023] [Accepted: 03/13/2023] [Indexed: 06/19/2023]
Abstract
A photodetector based on a hybrid dimensional heterostructure of laterally aligned multiwall carbon nanotubes (MWCNTs) and multilayered MoS2 was prepared using the micro-nano fixed-point transfer technique. Thanks to the high mobility of carbon nanotubes and the efficient interband absorption of MoS2, broadband detection from visible to near-infrared (520-1060 nm) was achieved. The test results demonstrate that the MWCNT-MoS2 heterostructure-based photodetector device exhibits an exceptional responsivity, detectivity, and external quantum efficiency. Specifically, the device demonstrated a responsivity of 3.67 × 103 A/W (λ = 520 nm, Vds = 1 V) and 718 A/W (λ = 1060 nm, Vds = 1 V). Moreover, the detectivity (D*) of the device was found to be 1.2 × 1010 Jones (λ = 520 nm) and 1.5 × 109 Jones (λ = 1060 nm), respectively. The device also demonstrated external quantum efficiency (EQE) values of approximately 8.77 × 105% (λ = 520 nm) and 8.41 × 104% (λ = 1060 nm). This work achieves visible and infrared detection based on mixed-dimensional heterostructures and provides a new option for optoelectronic devices based on low-dimensional materials.
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Affiliation(s)
- Nanxin Fu
- School of Materials and Chemistry, the University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Jiazhen Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yuan He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xuyang Lv
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Shuguang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xingjun Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Bin Zhao
- School of Materials and Chemistry, the University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Gang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Lin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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13
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Huo J, Zou G, Xiao Y, Sun T, Feng B, Shen D, Lin L, Wang W, A Z, Liu L. High performance 1D-2D CuO/MoS 2 photodetectors enhanced by femtosecond laser-induced contact engineering. MATERIALS HORIZONS 2023; 10:524-535. [PMID: 36426652 DOI: 10.1039/d2mh01088g] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The integration of 2D materials with other dimensional materials opens up rich possibilities for both fundamental physics and exotic nanodevices. However, current mixed-dimensional heterostructures often suffer from interfacial contact issues and environment-induced degradation, which severely limits their performance in electronics/optoelectronics. Herein, we demonstrate a novel BN-encapsulated CuO/MoS2 2D-1D van der Waals heterostructure photodetector with an ultrahigh photoresponsivity which is 10-fold higher than its previous 2D-1D counterparts. The interfacial contact state and photodetection capabilities of 2D-1D heterojunctions are significantly improved via femtosecond laser irradiation induced MoS2 wrapping and contamination removal. These h-BN protected devices show highly sensitive, gate-tunable and robust photoelectronic properties. By controlling the gate and bias voltages, the device can achieve a photoresponsivity as high as 2500 A W-1 in the forward bias mode, or achieve a high detectivity of 6.5 × 1011 Jones and a typical rise time of 2.5 ms at reverse bias. Moreover, h-BN encapsulation effectively protects the mixed-dimensional photodetector from electrical depletion by gas molecules such as O2 and H2O during fs laser treatment or the operation process, thus greatly improving the stability and service life in harsh environments. This work provides a new way for the further development of high performance, low cost, and robust mixed-dimensional heterostructure photodetectors by femtosecond laser contact engineering.
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Affiliation(s)
- Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
- Taiyuan University of Technology, Taiyuan 030024, China
| | - Bin Feng
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Daozhi Shen
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Luchan Lin
- Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wengan Wang
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Zhanwen A
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
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14
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Ding EX, Liu P, Yoon HH, Ahmed F, Du M, Shafi AM, Mehmood N, Kauppinen EI, Sun Z, Lipsanen H. Highly Sensitive MoS 2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode. ACS APPLIED MATERIALS & INTERFACES 2023; 15:4216-4225. [PMID: 36635093 PMCID: PMC9880956 DOI: 10.1021/acsami.2c19917] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2022] [Accepted: 01/05/2023] [Indexed: 06/17/2023]
Abstract
Fabricating electronic and optoelectronic devices by transferring pre-deposited metal electrodes has attracted considerable attention, owing to the improved device performance. However, the pre-deposited metal electrode typically involves complex fabrication procedures. Here, we introduce our facile electrode fabrication process which is free of lithography, lift-off, and reactive ion etching by directly press-transferring a single-walled carbon nanotube (SWCNT) film. We fabricated Schottky diodes for photodetector applications using dry-transferred SWCNT films as the transparent electrode to increase light absorption in photoactive MoS2 channels. The MoS2 flake vertically stacked with an SWCNT electrode can exhibit excellent photodetection performance with a responsivity of ∼2.01 × 103 A/W and a detectivity of ∼3.2 × 1012 Jones. Additionally, we carried out temperature-dependent current-voltage measurement and Fowler-Nordheim (FN) plot analysis to explore the dominant charge transport mechanism. The enhanced photodetection in the vertical configuration is found to be attributed to the FN tunneling and internal photoemission of charge carriers excited from indium tin oxide across the MoS2 layer. Our study provides a novel concept of using a photoactive MoS2 layer as a tunneling layer itself with a dry-transferred transparent SWCNT electrode for high-performance and energy-efficient optoelectronic devices.
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Affiliation(s)
- Er-Xiong Ding
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Peng Liu
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
- Department
of Applied Physics, School of Science, Aalto
University, EspooFI-02150, Finland
| | - Hoon Hahn Yoon
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Faisal Ahmed
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Mingde Du
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Abde Mayeen Shafi
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Naveed Mehmood
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Esko I. Kauppinen
- Department
of Applied Physics, School of Science, Aalto
University, EspooFI-02150, Finland
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
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15
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Dai D, Wang X, Yang J, Dang J, Yuan Y, Fu B, Xie X, Yang L, Xiao S, Shi S, Yan S, Zhu R, Zuo Z, Wang C, Jin K, Gong Q, Xu X. Single charge control of localized excitons in heterostructures with ferroelectric thin films and two-dimensional transition metal dichalcogenides. NANOSCALE 2022; 14:14537-14543. [PMID: 36185039 DOI: 10.1039/d2nr04119g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic doping method by applying metallic gates onto TMDCs may cause inhomogeneous charge distribution, optical quenching, and energy loss. Herein, by locally controlling the ferroelectric polarization of the ferroelectric thin film BiFeO3 (BFO) with a scanning probe, we can deterministically manipulate the doping type of monolayer WSe2 to achieve p-type and n-type doping. This nonvolatile approach can maintain the doping type and hold the localized excitonic charges for a long time without applied voltage. Our work demonstrated that the ferroelectric polarization of BFO can control the charges of LXs effectively. Neutral and charged LXs have been observed in different ferroelectric polarization regions, confirmed by magnetic optical measurement. Highly circular polarization degree with 90% photon emission from these quantum emitters was achieved in high magnetic fields. Controlling the single charge of LXs in a non-volatile way shows a great potential for deterministic photon emission with desired charge states for photonic long-term memory.
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Affiliation(s)
- Danjie Dai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinyan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jingnan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
| | - Jianchen Dang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Yuan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bowen Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
| | - Xin Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Longlong Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Xiao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shushu Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Sai Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Rui Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhanchun Zuo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
| | - Xiulai Xu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
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16
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Electrically tunable two-dimensional heterojunctions for miniaturized near-infrared spectrometers. Nat Commun 2022; 13:4627. [PMID: 35941126 PMCID: PMC9360404 DOI: 10.1038/s41467-022-32306-z] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Accepted: 07/25/2022] [Indexed: 11/20/2022] Open
Abstract
Miniaturized spectrometers are of considerable interest for their portability. Most designs to date employ a photodetector array with distinct spectral responses or require elaborated integration of micro & nano optic modules, typically with a centimeter-scale footprint. Here, we report a design of a micron-sized near-infrared ultra-miniaturized spectrometer based on two-dimensional van der Waals heterostructure (2D-vdWH). By introducing heavy metal atoms with delocalized electronic orbitals between 2D-vdWHs, we greatly enhance the interlayer coupling and realize electrically tunable infrared photoresponse (1.15 to 1.47 μm). Combining the gate-tunable photoresponse and regression algorithm, we achieve spectral reconstruction and spectral imaging in a device with an active footprint < 10 μm. Considering the ultra-small footprint and simple fabrication process, the 2D-vdWHs with designable bandgap energy and enhanced photoresponse offer an attractive solution for on-chip infrared spectroscopy. Miniaturized infrared spectrometers are required for imaging and remote sensing applications, but they are usually characterized by a cm-scale footprint. Here, the authors report the realization of near-infrared spectrometers based on Au-atom-intercalated ReS2/WSe2 heterostructures with an active footprint < 10 μm and electrically tunable photoresponse.
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17
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Wang W, Wang W, Meng Y, Quan Q, Lai Z, Li D, Xie P, Yip S, Kang X, Bu X, Chen D, Liu C, Ho JC. Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS 2 Heterojunctions. ACS NANO 2022; 16:11036-11048. [PMID: 35758898 DOI: 10.1021/acsnano.2c03673] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 104, fast response of 50 μs, and high detectivity of 1.64 × 1011 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.
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Affiliation(s)
- Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
| | - Xiaolin Kang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Xiuming Bu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Chuntai Liu
- Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou 450002, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
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18
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Shafi AM, Ahmed F, Fernandez HA, Uddin MG, Cui X, Das S, Dai Y, Khayrudinov V, Yoon HH, Du L, Sun Z, Lipsanen H. Inducing Strong Light-Matter Coupling and Optical Anisotropy in Monolayer MoS 2 with High Refractive Index Nanowire. ACS APPLIED MATERIALS & INTERFACES 2022; 14:31140-31147. [PMID: 35763802 PMCID: PMC9284513 DOI: 10.1021/acsami.2c07705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Mixed-dimensional heterostructures combine the merits of materials of different dimensions; therefore, they represent an advantageous scenario for numerous technological advances. Such an approach can be exploited to tune the physical properties of two-dimensional (2D) layered materials to create unprecedented possibilities for anisotropic and high-performance photonic and optoelectronic devices. Here, we report a new strategy to engineer the light-matter interaction and symmetry of monolayer MoS2 by integrating it with one-dimensional (1D) AlGaAs nanowire (NW). Our results show that the photoluminescence (PL) intensity of MoS2 increases strongly in the mixed-dimensional structure because of electromagnetic field confinement in the 1D high refractive index semiconducting NW. Interestingly, the 1D NW breaks the 3-fold rotational symmetry of MoS2, which leads to a strong optical anisotropy of up to ∼60%. Our mixed-dimensional heterostructure-based phototransistors benefit from this and exhibit an improved optoelectronic device performance with marked anisotropic photoresponse behavior. Compared with bare MoS2 devices, our MoS2/NW devices show ∼5 times enhanced detectivity and ∼3 times higher photoresponsivity. Our results of engineering light-matter interaction and symmetry breaking provide a simple route to induce enhanced and anisotropic functionalities in 2D materials.
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Affiliation(s)
- Abde Mayeen Shafi
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Faisal Ahmed
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Henry A. Fernandez
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Aalto FI-00076, Finland
| | - Md Gius Uddin
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Xiaoqi Cui
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Susobhan Das
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Yunyun Dai
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Vladislav Khayrudinov
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Hoon Hahn Yoon
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Luojun Du
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Aalto FI-00076, Finland
| | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
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19
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Takeuchi H, Urakami N, Hashimoto Y. Oxidation of tantalum disulfide (TaS 2) films for gate dielectric and process design of two-dimensional field-effect device. NANOTECHNOLOGY 2022; 33:375204. [PMID: 35667365 DOI: 10.1088/1361-6528/ac75f9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2022] [Accepted: 06/05/2022] [Indexed: 06/15/2023]
Abstract
Ta-based high-κdielectrics can be synthesized via the oxidation of TaS2films. In this study, we investigated the wet and dry oxidation of TaS2films via thermal annealing and plasma irradiation, respectively. The specific vibration observed via Raman spectroscopy, the bonding states observed via x-ray photoelectron spectroscopy, and capacitance measurements confirmed the oxidation of TaS2films with a dielectric constant of ∼14.9. Moreover, the electrical transport of the TaS2films along the in-plane direction indicated a change in conductivity before and after the oxidation. The thickness of the oxidized film was estimated. Accordingly, the layer-by-layer oxidation was limited to approximately 50 nm via plasma irradiation, whereas the TaS2films within 150 nm were fully oxidized via thermal annealing in ambient air. Therefore, a Ta-oxide/TaS2structure was fabricated as a stack material of insulator and metal when the thickness of the pristine film was greater than 50 nm. In addition, Ta-oxide films were integrated into bottom-gated two-dimensional (2D) field-effect transistors (FETs) using the dry transfer method. 2D FETs with multilayer MoTe2and MoS2films asp-type andn-type channels, respectively, were successfully fabricated. In particular, the Ta-oxide film synthesized via dry oxidation was used as a gate dielectric, and the device process could be simplified because the Ta-oxide/TaS2heterostructure can function as a stack material for gate insulators and gate electrodes. An anti-ambipolar transistor consisting of an MoTe2/MoS2heterojunction was also fabricated. For the transfer characteristics, a relatively sharp on-state bias range below 10 V and sufficiently high peak-to-valley ratio of 106atVDS = 3 V were obtained using the high-κ gate dielectric of Ta-oxide despite the presence of the multilayer channels (∼20 nm).
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Affiliation(s)
- Hayate Takeuchi
- Department of Electrical and Computer Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8533, Japan
| | - Noriyuki Urakami
- Department of Electrical and Computer Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8533, Japan
- Research Initiative for Supra-Materials, Shinshu University, 4-17-1 Wakasato, Nagano 380-8533, Japan
| | - Yoshio Hashimoto
- Department of Electrical and Computer Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8533, Japan
- Research Initiative for Supra-Materials, Shinshu University, 4-17-1 Wakasato, Nagano 380-8533, Japan
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20
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Kumar P, Meng AC, Jo K, Stach EA, Jariwala D. Interfacial Reaction and Diffusion at the One-Dimensional Interface of Two-Dimensional PtSe 2. NANO LETTERS 2022; 22:4733-4740. [PMID: 35675304 DOI: 10.1021/acs.nanolett.2c00874] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) PtSe2 has potential applications in near-infrared optoelectronics because its band gap can be tuned by varying the layer thickness. There are several different platinum-selenide phases with different stoichiometries that result from high-temperature processing. In this report, we use in situ scanning/transmission electron microscopy (STEM) to investigate high-temperature phase transitions in 2D PtSe2 and observe interfacial reactions as well as the Kirkendall effect. The 2D nature of PtSe2 plays a key role in the unique one-dimensional interfaces that result during the formation of Se-poor phases (PtSe and PtSe1-x) at the edges of the PtSe2 crystals. The activation energy extracted for this formation suggests that the process is mediated by Se vacancies, as evidenced by the large strain variations in the material made via 4D STEM measurements. The observation of the Kirkendall effect in a 2D material suggests routes to engineer 1D edge chemistry for contact engineering in device applications.
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Affiliation(s)
- Pawan Kumar
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Andrew C Meng
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Kiyoung Jo
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Eric A Stach
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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21
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Chakraborty SK, Kundu B, Nayak B, Dash SP, Sahoo PK. Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices. iScience 2022; 25:103942. [PMID: 35265814 PMCID: PMC8898921 DOI: 10.1016/j.isci.2022.103942] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022] Open
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22
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Kim J, Jung M, Lim DU, Rhee D, Jung SH, Cho HK, Kim HK, Cho JH, Kang J. Area-Selective Chemical Doping on Solution-Processed MoS 2 Thin-Film for Multi-Valued Logic Gates. NANO LETTERS 2022; 22:570-577. [PMID: 34779637 DOI: 10.1021/acs.nanolett.1c02947] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Multi-valued logic gates are demonstrated on solution-processed molybdenum disulfide (MoS2) thin films. A simple chemical doping process is added to the conventional transistor fabrication procedure to locally increase the work function of MoS2 by decreasing sulfur vacancies. The resulting device exhibits pseudo-heterojunctions comprising as-processed MoS2 and chemically treated MoS2 (c-MoS2). The energy-band misalignment of MoS2 and c-MoS2 results in a sequential activation of the MoS2 and c-MoS2 channel areas under a gate voltage sweep, which generates a stable intermediate state for ternary operation. Current levels and turn-on voltages for each state can be tuned by modulating the device geometries, including the channel thickness and length. The optimized ternary transistors are incorporated to demonstrate various ternary logic gates, including the inverter, NMIN, and NMAX gates.
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Affiliation(s)
- Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Myeongjin Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dong Un Lim
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Dongjoon Rhee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Sung Hyeon Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Han-Ki Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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23
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Jadwiszczak J, Sherman J, Lynall D, Liu Y, Penkov B, Young E, Keneipp R, Drndić M, Hone JC, Shepard KL. Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit. ACS NANO 2022; 16:1639-1648. [PMID: 35014261 PMCID: PMC9526797 DOI: 10.1021/acsnano.1c10524] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Inverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this inversion. Access to inversion layers may be granted by interfacing ultrathin low-dimensional semiconductors in heterojunctions to advance device downscaling. Here we demonstrate that monolayer molybdenum disulfide (MoS2) can directly invert a single-walled semiconducting carbon nanotube (SWCNT) transistor channel without the need for a gate dielectric. We fabricate and study this atomically thin one-dimensional/two-dimensional (1D/2D) van der Waals heterojunction and employ it as the gate of a 1D heterojunction field-effect transistor (1D-HFET) channel. Gate control is based on modulating the conductance through the channel by forming a lateral p-n junction within the CNT itself. In addition, we observe a region of operation exhibiting a negative static resistance after significant gate tunneling current passes through the junction. Technology computer-aided design (TCAD) simulations confirm the role of minority carrier drift-diffusion in enabling this behavior. The resulting van der Waals transistor architecture thus has the dual characteristics of both field-effect and tunneling transistors, and it advances the downscaling of heterostructures beyond the limits of dangling bonds and epitaxial constraints faced by III-V semiconductors.
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Affiliation(s)
- Jakub Jadwiszczak
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Jeffrey Sherman
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - David Lynall
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Yang Liu
- Department of Mechanical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Boyan Penkov
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Erik Young
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Rachael Keneipp
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Kenneth L Shepard
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
- Department of Biomedical Engineering, Columbia University, 1210 Amsterdam Avenue, New York, New York 10027, United States
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24
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Thakar K, Lodha S. Multi-Bit Analog Transmission Enabled by Electrostatically Reconfigurable Ambipolar and Anti-Ambipolar Transport. ACS NANO 2021; 15:19692-19701. [PMID: 34890505 DOI: 10.1021/acsnano.1c07032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Various analog applications, such as phase switching, have been demonstrated using either ambipolar or anti-ambipolar transport in two-dimensional materials. However, the availability of only one transport mode severely limits the application scope and range. This work demonstrates electrostatically reconfigurable and tunable ambipolar and anti-ambipolar transport in the same field-effect transistor using a photoactive ambipolar WSe2 channel with gate-controlled channel and Schottky barriers. This enables the realization of in-phase, out-of-phase, and double-frequency sinusoidal output signals under dark and illumination conditions. The output waveforms were used to generate phase-, frequency-, and amplitude-modulated analog schemes for 2- and 3-bit data transmission. Evaluation of all possible schemes for their power consumption, error probability, and implementation complexity highlights the importance of switching between ambipolar and anti-ambipolar modes of transport for best transmission performance. A dual-metal contact transistor with improved linearity for harmonic and excess power suppression demonstrates further performance enhancement. Generic device architecture and operation makes this work adaptable to any ambipolar material amenable to electrostatic control.
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Affiliation(s)
- Kartikey Thakar
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Saurabh Lodha
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
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25
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Pan Y, Liu X, Yang J, Yoo WJ, Sun J. Controlling Carrier Transport in Vertical MoTe 2/MoS 2 van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54294-54300. [PMID: 34739218 DOI: 10.1021/acsami.1c16594] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenide (TMDC)-based semiconducting van der Waals (vdW) heterostructures are considered as potential candidates for next-generation nanoelectronics due to their unique and tunable properties. Controlling the carrier type and band alignment in 2D TMDCs and their vdW heterostructures is critical for realizing heterojunctions with the desired performances and functionalities. In this report, controlling the carrier type and band alignment in a vertical MoTe2/MoS2 heterojunction is presented via thickness engineering and surface charge transfer doping. A highly rectifying p-n diode and a nonrectifying n-n junction are obtained with different MoTe2 thicknesses due to their different doping conditions. A vertical tunnel diode is subsequently achieved with a controlled oxygen plasma treatment, which selectively induces degenerate p-type doping to MoTe2, whereas the intrinsic n-type characteristic of MoS2 is maintained during the treatment. These techniques to realize multifunctional diodes are universal and applicable to emerging nanoelectronics based on 2D materials.
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Affiliation(s)
- Yuchuan Pan
- School of Physics and Electronics, Central South University, Changsha 410083, China
| | - Xiaochi Liu
- School of Physics and Electronics, Central South University, Changsha 410083, China
| | - Junqiang Yang
- School of Physics and Electronics, Central South University, Changsha 410083, China
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jian Sun
- School of Physics and Electronics, Central South University, Changsha 410083, China
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26
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Qin L, Lu Y, Li Q, Wang Z, Wang J, Tang B, Zhou W, Yuan C, Wang Q, Wang L. General synthesis of mixed-dimensional van der Waals heterostructures with hexagonal symmetry. NANOTECHNOLOGY 2021; 32:505610. [PMID: 34551405 DOI: 10.1088/1361-6528/ac291d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Accepted: 09/22/2021] [Indexed: 06/13/2023]
Abstract
The combination of two-dimensional (2D) materials with non-2D materials (quantum dots, nanowires and bulk materials), i.e. mixed-dimensional van der Waals (md-vdW) heterostructures endow 2D materials with remarkable electronics properties. However, it remains a big challenge to synthesize md-vdW heterostructures because of the difference of crystal symmetry between 2D and non-2D materials. Meanwhile, it is difficult to initiate the nucleation due to the lack of chemical active sites on chemical inert surfaces of 2D materials. Herein, we design a general chemical vapor deposition method for synthesizing a broad class of md-vdW heterostructures with well-aligned hexagonal symmetry including MoS2/FeS, MoS2/CoS, MoS2/MnS, MoS2/ZnS, Mo(SxSe1-x)2/ZnSxSe1-x, Mo(SxSe1-x)2/CdSxSe1-x. Combining with DFT calculation, we find that the hexagonal symmetry and the centered clusters of MoS2and Mo(SxSe1-x)2nanoflakes are two crucial factors to launch the hexagonally oriented growth and nucleation of non-2D materials on 2D materials. Our discovery opens an opportunity for the versatile hetero-integration of 2D materials and allows systematic investigation of physical properties in a wide variety of md-vdW heterostructures.
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Affiliation(s)
- Liyun Qin
- Department of Physics, Nanchang University, Nanchang 330031, People's Republic of China
| | - Yan Lu
- Department of Physics, Nanchang University, Nanchang 330031, People's Republic of China
| | - Qinliang Li
- Jiangxi Key Laboratory of Nanomaterials and Sensors, Jiangxi Normal University, Nanchang 330022, People's Republic of China
- School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang 330022, People's Republic of China
| | - Zhendong Wang
- Department of Physics, Nanchang University, Nanchang 330031, People's Republic of China
| | - Jianyu Wang
- Department of Physics, Nanchang University, Nanchang 330031, People's Republic of China
| | - Binbing Tang
- Institute for Advanced Study, Nanchang University, Nanchang 330031, People's Republic of China
| | - Wenda Zhou
- Jiangxi Key Laboratory of Nanomaterials and Sensors, Jiangxi Normal University, Nanchang 330022, People's Republic of China
- School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang 330022, People's Republic of China
| | - Cailei Yuan
- Jiangxi Key Laboratory of Nanomaterials and Sensors, Jiangxi Normal University, Nanchang 330022, People's Republic of China
- School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang 330022, People's Republic of China
| | - Qisheng Wang
- Department of Physics, Nanchang University, Nanchang 330031, People's Republic of China
| | - Li Wang
- Department of Physics, Nanchang University, Nanchang 330031, People's Republic of China
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27
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Afzal AM, Iqbal MZ, Dastgeer G, Nazir G, Eom J. Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47882-47894. [PMID: 34605233 DOI: 10.1021/acsami.1c12035] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional transition-metal dichalcogenide (2D-TMD) semiconductors and their van der Waals heterostructures (vdWHs) have attracted great attention because of their tailorable band-engineering properties and provide a propitious platform for next-generation extraordinary performance energy-harvesting devices. Herein, we reported unique and unreported germanium selenide/rhenium diselenide (p-GeSe/n-ReSe2) 2D-TMD vdWH photodetectors for extremely sensitive and high-performance photodetection in the broadband spectral range (visible and near-infrared range). A high and gate-tunable rectification ratio (RR) of 7.34 × 105 is achieved, stemming from the low Schottky barrier contacts and sharp interfaces of the p-GeSe/n-ReSe2 2D-TMD vdWHs. In addition, a noticeably high responsivity (R = 2.89 × 105 A/W) and specific detectivity (D* = 4.91 × 1013 Jones), with good external quantum efficiency (EQE = 6.1 × 105) are obtained because of intralayer and interlayer transition of excitations, enabling the broadband photoresponse (λ = 532-1550 nm) at room temperature. Furthermore, fast response times of 16-20 μs are estimated under the irradiated laser of λ = 1550 nm because of interlayer exciton transition. Such a TMD-based compact system offers an opportunity for the realization of high-performance broadband infrared photodetectors.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Physics, Riphah International University, 13-km Raiwind Road, Lahore 54000, Pakistan
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan
| | - Ghulam Dastgeer
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea
| | - Ghazanfar Nazir
- Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea
| | - Jonghwa Eom
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea
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Huang PY, Qin JK, Zhu CY, Zhen L, Xu CY. 2D-1D mixed-dimensional heterostructures: progress, device applications and perspectives. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:493001. [PMID: 34479213 DOI: 10.1088/1361-648x/ac2388] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2021] [Accepted: 09/03/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted broad interests and been extensively exploited for a variety of functional applications. Moreover, one-dimensional (1D) atomic crystals can also be integrated into 2D templates to create mixed-dimensional heterostructures, and the versatility of combinations provides 2D-1D heterostructures plenty of intriguing physical properties, making them promising candidate to construct novel electronic and optoelectronic nanodevices. In this review, we first briefly present an introduction of relevant fabrication methods and structural configurations for 2D-1D heterostructures integration. We then discuss the emerged intriguing physics, including high optical absorption, efficient carrier separation, fast charge transfer and plasmon-exciton interconversion. Their potential applications such as electronic/optoelectronic devices, photonic devices, spintronic devices and gas sensors, are also discussed. Finally, we provide a brief perspective for the future opportunities and challenges in this emerging field.
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Affiliation(s)
- Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Cheng-Yi Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Liang Zhen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, People's Republic of China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, People's Republic of China
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Sasikala T, Shanmugasundaram K, Thirunavukkarasu P, Chandrasekaran J, Vivek P, Marnadu R, Aslam Manthrammel M, Gunasekaran S. Characterization of Jet nebulizer spray pyrolysis coated MoS2 thin films and fabrication of p-Si/n-MoS2 junction diodes for optoelectronic application. INORG CHEM COMMUN 2021. [DOI: 10.1016/j.inoche.2021.108701] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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30
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Wang F, Zou X, Xu M, Wang H, Wang H, Guo H, Guo J, Wang P, Peng M, Wang Z, Wang Y, Miao J, Chen F, Wang J, Chen X, Pan A, Shan C, Liao L, Hu W. Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100569. [PMID: 34032025 PMCID: PMC8292906 DOI: 10.1002/advs.202100569] [Citation(s) in RCA: 49] [Impact Index Per Article: 16.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Revised: 03/18/2021] [Indexed: 06/01/2023]
Abstract
Photodetectors built from conventional bulk materials such as silicon, III-V or II-VI compound semiconductors are one of the most ubiquitous types of technology in use today. The past decade has witnessed a dramatic increase in interest in emerging photodetectors based on perovskite materials driven by the growing demands for uncooled, low-cost, lightweight, and even flexible photodetection technology. Though perovskite has good electrical and optical properties, perovskite-based photodetectors always suffer from nonideal quantum efficiency and high-power consumption. Joint manipulation of electrons and photons in perovskite photodetectors is a promising strategy to improve detection efficiency. In this review, electrical and optical characteristics of typical types of perovskite photodetectors are first summarized. Electrical manipulations of electrons in perovskite photodetectors are discussed. Then, artificial photonic nanostructures for photon manipulations are detailed to improve light absorption efficiency. By reviewing the manipulation of electrons and photons in perovskite photodetectors, this review aims to provide strategies to achieve high-performance photodetectors.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Xuming Zou
- Key Laboratory for Micro‐Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Mengjian Xu
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
- Terahertz Technology Innovation Research InstituteTerahertz Spectrum and Imaging Technology Cooperative Innovation CenterShanghai Key Lab of Modern Optical SystemUniversity of Shanghai for Science and TechnologyShanghai200093China
| | - Hao Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Hailu Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Huijun Guo
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Peng Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Meng Peng
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Zhen Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Yang Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Jinshui Miao
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China
| | - Fansheng Chen
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Jianlu Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Anlian Pan
- Key Laboratory for Micro‐Nano Physics and Technology of Hunan ProvinceCollege of Materials Science and EngineeringHunan UniversityChangsha410082China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesSchool of Physics and EngineeringZhengzhou UniversityZhengzhou45000China
| | - Lei Liao
- Key Laboratory for Micro‐Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Weida Hu
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China
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Liu K, Li J, Qi H, Hambsch M, Rawle J, Vázquez AR, Nia AS, Pashkin A, Schneider H, Polozij M, Heine T, Helm M, Mannsfeld SCB, Kaiser U, Dong R, Feng X. A Two‐Dimensional Polyimide‐Graphene Heterostructure with Ultra‐fast Interlayer Charge Transfer. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202102984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Kejun Liu
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden Technische Universität Dresden 01062 Dresden Germany
- Leibniz-Institut für Polymerforschung Dresden e.V. (IPF) 01069 Dresden Germany
| | - Jiang Li
- Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf 01328 Dresden Germany
| | - Haoyuan Qi
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden Technische Universität Dresden 01062 Dresden Germany
- Central Facility of Electron Microscopy Electron Microscopy Group of Materials Science Universität Ulm 89081 Ulm Germany
| | - Mike Hambsch
- Center for Advancing Electronics Dresden and Faculty of Electrical and Computer Engineering Technische Universität Dresden 01062 Dresden Germany
| | | | - Adrián Romaní Vázquez
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden Technische Universität Dresden 01062 Dresden Germany
| | - Ali Shaygan Nia
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden Technische Universität Dresden 01062 Dresden Germany
| | - Alexej Pashkin
- Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf 01328 Dresden Germany
| | - Harald Schneider
- Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf 01328 Dresden Germany
| | - Mirosllav Polozij
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden Technische Universität Dresden 01062 Dresden Germany
| | - Thomas Heine
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden Technische Universität Dresden 01062 Dresden Germany
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf 01328 Dresden Germany
| | - Stefan C. B. Mannsfeld
- Center for Advancing Electronics Dresden and Faculty of Electrical and Computer Engineering Technische Universität Dresden 01062 Dresden Germany
| | - Ute Kaiser
- Central Facility of Electron Microscopy Electron Microscopy Group of Materials Science Universität Ulm 89081 Ulm Germany
| | - Renhao Dong
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden Technische Universität Dresden 01062 Dresden Germany
| | - Xinliang Feng
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden Technische Universität Dresden 01062 Dresden Germany
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Liu K, Li J, Qi H, Hambsch M, Rawle J, Vázquez AR, Nia AS, Pashkin A, Schneider H, Polozij M, Heine T, Helm M, Mannsfeld SCB, Kaiser U, Dong R, Feng X. A Two-Dimensional Polyimide-Graphene Heterostructure with Ultra-fast Interlayer Charge Transfer. Angew Chem Int Ed Engl 2021; 60:13859-13864. [PMID: 33835643 PMCID: PMC8252803 DOI: 10.1002/anie.202102984] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Indexed: 12/22/2022]
Abstract
Two-dimensional polymers (2DPs) are a class of atomically/molecularly thin crystalline organic 2D materials. They are intriguing candidates for the development of unprecedented organic-inorganic 2D van der Waals heterostructures (vdWHs) with exotic physicochemical properties. In this work, we demonstrate the on-water surface synthesis of large-area (cm2 ), monolayer 2D polyimide (2DPI) with 3.1-nm lattice. Such 2DPI comprises metal-free porphyrin and perylene units linked by imide bonds. We further achieve a scalable synthesis of 2DPI-graphene (2DPI-G) vdWHs via a face-to-face co-assembly of graphene and 2DPI on the water surface. Remarkably, femtosecond transient absorption spectroscopy reveals an ultra-fast interlayer charge transfer (ca. 60 fs) in the resultant 2DPI-G vdWH upon protonation by acid, which is equivalent to that of the fastest reports among inorganic 2D vdWHs. Such large interlayer electronic coupling is ascribed to the interlayer cation-π interaction between 2DP and graphene.
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Affiliation(s)
- Kejun Liu
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics DresdenTechnische Universität Dresden01062DresdenGermany
- Leibniz-Institut für Polymerforschung Dresden e.V. (IPF)01069DresdenGermany
| | - Jiang Li
- Institute of Ion Beam Physics and Materials ResearchHelmholtz-Zentrum Dresden-Rossendorf01328DresdenGermany
| | - Haoyuan Qi
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics DresdenTechnische Universität Dresden01062DresdenGermany
- Central Facility of Electron MicroscopyElectron Microscopy Group of Materials ScienceUniversität Ulm89081UlmGermany
| | - Mike Hambsch
- Center for Advancing Electronics Dresden and Faculty of Electrical and Computer EngineeringTechnische Universität Dresden01062DresdenGermany
| | | | - Adrián Romaní Vázquez
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics DresdenTechnische Universität Dresden01062DresdenGermany
| | - Ali Shaygan Nia
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics DresdenTechnische Universität Dresden01062DresdenGermany
| | - Alexej Pashkin
- Institute of Ion Beam Physics and Materials ResearchHelmholtz-Zentrum Dresden-Rossendorf01328DresdenGermany
| | - Harald Schneider
- Institute of Ion Beam Physics and Materials ResearchHelmholtz-Zentrum Dresden-Rossendorf01328DresdenGermany
| | - Mirosllav Polozij
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics DresdenTechnische Universität Dresden01062DresdenGermany
| | - Thomas Heine
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics DresdenTechnische Universität Dresden01062DresdenGermany
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials ResearchHelmholtz-Zentrum Dresden-Rossendorf01328DresdenGermany
| | - Stefan C. B. Mannsfeld
- Center for Advancing Electronics Dresden and Faculty of Electrical and Computer EngineeringTechnische Universität Dresden01062DresdenGermany
| | - Ute Kaiser
- Central Facility of Electron MicroscopyElectron Microscopy Group of Materials ScienceUniversität Ulm89081UlmGermany
| | - Renhao Dong
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics DresdenTechnische Universität Dresden01062DresdenGermany
| | - Xinliang Feng
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics DresdenTechnische Universität Dresden01062DresdenGermany
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Afzal AM, Iqbal MZ, Dastgeer G, Ahmad AU, Park B. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe 2 and PdSe 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2003713. [PMID: 34105276 PMCID: PMC8188193 DOI: 10.1002/advs.202003713] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2020] [Revised: 02/10/2021] [Indexed: 05/11/2023]
Abstract
Recently, van der Waals heterostructures (vdWHs) based on transition-metal dichalcogenides (TMDs) have attracted significant attention owing to their superior capabilities and multiple functionalities. Herein, a novel vdWH field-effect transistor (FET) composed of molybdenum ditelluride (MoTe2 ) and palladium diselenide (PdSe2 ) is studied for highly sensitive photodetection performance in the broad visible and near-infrared (VNIR) region. A high rectification ratio of 6.3 × 105 is obtained, stemming from the sharp interface and low Schottky barriers of the MoTe2 /PdSe2 vdWHs. It is also successfully demonstrated that the vdWH FET exhibits highly sensitive photo-detecting abilities, such as noticeably high photoresponsivity (1.24 × 105 A W-1 ), specific detectivity (2.42 × 1014 Jones), and good external quantum efficiency (3.5 × 106 ), not only due to the intra-TMD band-to-band transition but also due to the inter-TMD charge transfer (CT) transition. Further, rapid rise (16.1 µs) and decay (31.1 µs) times are obtained under incident light with a wavelength of 2000 nm due to the CT transition, representing an outcome one order of magnitude faster than values currently in the literature. Such TMD-based vdWH FETs would improve the photo-gating characteristics and provide a platform for the realization of a highly sensitive photodetector in the broad VNIR region.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Electrical and Biological PhysicsKwangwoon UniversityWolgye‐DongSeoul01897South Korea
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering SciencesGIK Institute of Engineering Sciences and TechnologyTopiKhyber Pakhtunkhwa23640Pakistan
| | - Ghulam Dastgeer
- School of PhysicsPeking UniversityBeijing100871China
- IBS Center for Integrated Nanostructure PhysicsSungkyunkwan UniversitySuwon16419South Korea
| | - Aqrab ul Ahmad
- School of Physics and School of MicroelectronicsDalian University of TechnologyDalian116000China
| | - Byoungchoo Park
- Department of Electrical and Biological PhysicsKwangwoon UniversityWolgye‐DongSeoul01897South Korea
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Cho SH, Jang H, Im H, Lee D, Lee JH, Watanabe K, Taniguchi T, Seong MJ, Lee BH, Lee K. Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures. Sci Rep 2021; 11:7843. [PMID: 33846520 PMCID: PMC8041794 DOI: 10.1038/s41598-021-87442-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2021] [Accepted: 03/25/2021] [Indexed: 11/09/2022] Open
Abstract
Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium selenide (InSe)/black phosphorous (BP) heterostructures encapsulated by hexagonal boron nitride. At a positive drain bias (VD), applied on the BP while the InSe is grounded, our heterostructures show an intermediate gate voltage (VBG) regime where the current hardly changes, working as a ternary transistor. By contrast, at a negative VD, the device shows strong negative differential transconductance characteristics; the peak current increases up to ~5 μA and the peak-to-valley current ratio reaches 1600 at VD = −2 V. Four-terminal measurements were performed on each layer, allowing us to separate the contributions of contact resistances and channel resistance. Moreover, multiple devices with different device structures and contacts were investigated, providing insight into the operation principle and performance optimization. We systematically investigated the influence of contact resistances, heterojunction resistance, channel resistance, and the thickness of BP on the detailed operational characteristics at different VD and VBG regimes.
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Affiliation(s)
- Sang-Hoo Cho
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Hanbyeol Jang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Heungsoon Im
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Donghyeon Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Je-Ho Lee
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Maeng-Je Seong
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Byoung Hun Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea.,Center for Semiconductor Technology Convergence (CSTC), Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Kayoung Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea. .,School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
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Ahmad W, Gong Y, Abbas G, Khan K, Khan M, Ali G, Shuja A, Tareen AK, Khan Q, Li D. Evolution of low-dimensional material-based field-effect transistors. NANOSCALE 2021; 13:5162-5186. [PMID: 33666628 DOI: 10.1039/d0nr07548e] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Field-effect transistors (FETs) have tremendous applications in the electronics industry due to their outstanding features such as small size, easy fabrication, compatibility with integrated electronics, high sensitivity, rapid detection and easy measuring procedures. However, to meet the increasing demand of the electronics industry, efficient FETs with controlled short channel effects, enhanced surface stability, reduced size, and superior performances based on low-dimensional materials are desirable. In this review, we present the developmental roadmap of FETs from conventional to miniaturized devices and highlight their prospective applications in the field of optoelectronic devices. Initially, a detailed study of the general importance of bulk and low-dimensional materials is presented. Then, recent advances in low-dimensional material heterostructures, classification of FETs, and the applications of low-dimensional materials in field-effect transistors and photodetectors are presented in detail. In addition, we also describe current issues in low-dimensional material-based FETs and propose potential approaches to address these issues, which are crucial for developing electronic and optoelectronic devices. This review will provide guidelines for low-dimensional material-based FETs with high performance and advanced applications in the future.
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Affiliation(s)
- Waqas Ahmad
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Youning Gong
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Ghulam Abbas
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Karim Khan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Maaz Khan
- Nanomaterials Research Group, Physics Division, PINSTECH, Nilore 45650, Islamabad, Pakistan
| | - Ghafar Ali
- Nanomaterials Research Group, Physics Division, PINSTECH, Nilore 45650, Islamabad, Pakistan
| | - Ahmed Shuja
- Centre for Advanced Electronics & Photovoltaic Engineering, International Islamic University, Islamabad, Pakistan
| | - Ayesha Khan Tareen
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Qasim Khan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Delong Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
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Gbadamasi S, Mohiuddin M, Krishnamurthi V, Verma R, Khan MW, Pathak S, Kalantar-Zadeh K, Mahmood N. Interface chemistry of two-dimensional heterostructures - fundamentals to applications. Chem Soc Rev 2021; 50:4684-4729. [PMID: 33621294 DOI: 10.1039/d0cs01070g] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Two-dimensional heterostructures (2D HSs) have emerged as a new class of materials where dissimilar 2D materials are combined to synergise their advantages and alleviate shortcomings. Such a combination of dissimilar components into 2D HSs offers fascinating properties and intriguing functionalities attributed to the newly formed heterointerface of constituent components. Understanding the nature of the surface and the complex heterointerface of HSs at the atomic level is crucial for realising the desired properties, designing innovative 2D HSs, and ultimately unlocking their full potential for practical applications. Therefore, this review provides the recent progress in the field of 2D HSs with a focus on the discussion of the fundamentals and the chemistry of heterointerfaces based on van der Waals (vdW) and covalent interactions. It also explains the challenges associated with the scalable synthesis and introduces possible methodologies to produce large quantities with good control over the heterointerface. Subsequently, it highlights the specialised characterisation techniques to reveal the heterointerface formation, chemistry and nature. Afterwards, we give an overview of the role of 2D HSs in various emerging applications, particularly in high-power batteries, bifunctional catalysts, electronics, and sensors. In the end, we present conclusions with the possible solutions to the associated challenges with the heterointerfaces and potential opportunities that can be adopted for innovative applications.
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Zhang K, Zhang L, Han L, Wang L, Chen Z, Xing H, Chen X. Recent progress and challenges based on two-dimensional material photodetectors. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/abd45b] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Hu W, Sheng Z, Hou X, Chen H, Zhang Z, Zhang DW, Zhou P. Ambipolar 2D Semiconductors and Emerging Device Applications. SMALL METHODS 2021; 5:e2000837. [PMID: 34927812 DOI: 10.1002/smtd.202000837] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2020] [Revised: 10/12/2020] [Indexed: 06/14/2023]
Abstract
With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, light-emitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrated optoelectronic circuits, and artificial neural network image sensors, enriching the functions of conventional devices and bringing breakthroughs to build new architectures. This review first focuses on the basic knowledge including fundamental principle of ambipolar semiconductors, basic material preparation techniques, and how to obtain the ambipolar behavior through electrical contact engineering. Then, the current ambipolar 2D semiconductors and their preparation approaches and main properties are summarized. Finally, the emerging new device structures are overviewed in detail, along with their novel electronic and optoelectronic applications. It is expected to shed light on the future development of ambipolar 2D semiconductors, exploring more new devices with novel functions and promoting the applications of 2D materials.
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Affiliation(s)
- Wennan Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zhe Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiang Hou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Huawei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zengxing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
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Jiang W, Zheng T, Wu B, Jiao H, Wang X, Chen Y, Zhang X, Peng M, Wang H, Lin T, Shen H, Ge J, Hu W, Xu X, Meng X, Chu J, Wang J. A versatile photodetector assisted by photovoltaic and bolometric effects. LIGHT, SCIENCE & APPLICATIONS 2020; 9:160. [PMID: 32963772 PMCID: PMC7484767 DOI: 10.1038/s41377-020-00396-3] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2020] [Revised: 07/31/2020] [Accepted: 08/24/2020] [Indexed: 05/13/2023]
Abstract
The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors. However, the limited exploitation of basic properties makes it difficult for devices to stand out. Here, we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake. Vanadium dioxide is a classical semiconductor with a narrow bandgap, a high temperature coefficient of resistance, and phase transformation. Molybdenum ditelluride, a typical two-dimensional material, is often used to construct optoelectronic devices. The heterostructure can realize three different functional modes: (i) the p-n junction exhibits ultrasensitive detection (450 nm-2 μm) with a dark current down to 0.2 pA and a response time of 17 μs, (ii) the Schottky junction works stably under extreme conditions such as a high temperature of 400 K, and (iii) the bolometer shows ultrabroad spectrum detection exceeding 10 μm. The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation (LWIR). This type of photodetector combines versatile detection modes, shedding light on the hybrid application of novel and traditional materials, and is a prototype of advanced optoelectronic devices.
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Affiliation(s)
- Wei Jiang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
- University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Tan Zheng
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai, 201620 China
| | - Binmin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Hanxue Jiao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Yan Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Xiaoyu Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
- University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Jun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Xiaofeng Xu
- Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai, 201620 China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Junhao Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083 China
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Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe 2 and MoS 2: A Review. MICROMACHINES 2020; 11:mi11080750. [PMID: 32751953 PMCID: PMC7465435 DOI: 10.3390/mi11080750] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/03/2020] [Revised: 07/26/2020] [Accepted: 07/28/2020] [Indexed: 01/30/2023]
Abstract
While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.
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Sangwan VK, Hersam MC. Neuromorphic nanoelectronic materials. NATURE NANOTECHNOLOGY 2020; 15:517-528. [PMID: 32123381 DOI: 10.1038/s41565-020-0647-z] [Citation(s) in RCA: 199] [Impact Index Per Article: 49.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2019] [Accepted: 01/23/2020] [Indexed: 05/10/2023]
Abstract
Memristive and nanoionic devices have recently emerged as leading candidates for neuromorphic computing architectures. While top-down fabrication based on conventional bulk materials has enabled many early neuromorphic devices and circuits, bottom-up approaches based on low-dimensional nanomaterials have shown novel device functionality that often better mimics a biological neuron. In addition, the chemical, structural and compositional tunability of low-dimensional nanomaterials coupled with the permutational flexibility enabled by van der Waals heterostructures offers significant opportunities for artificial neural networks. In this Review, we present a critical survey of emerging neuromorphic devices and architectures enabled by quantum dots, metal nanoparticles, polymers, nanotubes, nanowires, two-dimensional layered materials and van der Waals heterojunctions with a particular emphasis on bio-inspired device responses that are uniquely enabled by low-dimensional topology, quantum confinement and interfaces. We also provide a forward-looking perspective on the opportunities and challenges of neuromorphic nanoelectronic materials in comparison with more mature technologies based on traditional bulk electronic materials.
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Affiliation(s)
- Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
- Department of Chemistry, Northwestern University, Evanston, IL, USA.
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA.
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42
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Beck ME, Hersam MC. Emerging Opportunities for Electrostatic Control in Atomically Thin Devices. ACS NANO 2020; 14:6498-6518. [PMID: 32463222 DOI: 10.1021/acsnano.0c03299] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.
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Affiliation(s)
- Megan E Beck
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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Deng W, Chen X, Li Y, You C, Chu F, Li S, An B, Ma Y, Liao L, Zhang Y. Strain Effect Enhanced Ultrasensitive MoS 2 Nanoscroll Avalanche Photodetector. J Phys Chem Lett 2020; 11:4490-4497. [PMID: 32383880 DOI: 10.1021/acs.jpclett.0c00861] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) materials and their derived quasi one-dimensional structure provide incredible possibilities for the field of photoelectric detection due to their intrinsic optical and electrical properties. However, the photogenerated carriers in atomically thin media are poor due to the low optical absorption, which greatly limits their performance. Here, in the MoS2 nanoscroll photodetector, we meticulously investigated the avalanche multiplication effect. The results show that by employing the nanoscroll structure, the required threshold electrical field for triggering avalanche multiplication is significantly lower than that of MoS2 flake due to the modulation of the energy band and intervalley scattering through the strain effect. Consequently, avalanche multiplication could efficiently enhance the photoresponsivity to >104 A/W. Furthermore, enhanced avalanche multiplication could be generalized to other TMDCs through theoretical prediction. The results not only are significant for the understanding of the intrinsic nature of 2D materials but also reveal meaningful advances in high-performance and low-power consumption photodetection.
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Affiliation(s)
- Wenjie Deng
- College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Xiaoqing Chen
- College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Yufo Li
- College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Congya You
- College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Feihong Chu
- College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Songyu Li
- College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Boxing An
- College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Yang Ma
- College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Lei Liao
- School of Physics & Electronics, Hunan University, Changsha 410082, China
| | - Yongzhe Zhang
- College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
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Afzal AM, Dastgeer G, Iqbal MZ, Gautam P, Faisal MM. High-Performance p-BP/n-PdSe 2 Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse. ACS APPLIED MATERIALS & INTERFACES 2020; 12:19625-19634. [PMID: 32242654 DOI: 10.1021/acsami.9b22898] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Van der Waals heterostructures composed of transition-metal dichalcogenide (TMD) materials have become a remarkable compact system that could offer an innovative architecture for advanced engineering in high-performance energy-harvesting and optoelectronic devices. Here, we report a novel van der Waals (vdW) TMD heterojunction photodiode composed of black phosphorus (p-BP) and palladium diselenide (n-PdSe2), which establish a high and tunable rectification and photoresponsivity. A high rectification up to ≈7.1 × 105 is achieved, which is successfully tuned by employing the back-gate voltage to the heterostructure devices. Besides, the device significantly shows the high and gate-controlled photoresponsivity of R = 9.6 × 105, 4.53 × 105 and 1.63 × 105 A W-1 under the influence of light of different wavelengths (λ = 532, 1064, and 1310 nm) in visible and near-infrared regions, respectively, because of interlayer optical transition and low Schottky. The device also demonstrates extraordinary values of detectivity (D = 5.8 × 1013 Jones) and external quantum efficiency (EQE ≈ 9.4 × 106), which are an order of magnitude higher than the currently reported values. The effective enhancement of photovoltaic characteristics in visible and infrared regions of this TMD heterostructure-based system has a huge potential in the field of optoelectronics to realize high-performance infrared photodetectors.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Electrical and Biological Physics, KwangWoon University, Seoul 01897, Republic of Korea
| | - Ghulam Dastgeer
- IBS Center for Integrated Nanostructure Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan
| | - Praveen Gautam
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, Seoul 05006, Korea
| | - Mian Muhammad Faisal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan
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Miao J, Liu X, Jo K, He K, Saxena R, Song B, Zhang H, He J, Han MG, Hu W, Jariwala D. Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces. NANO LETTERS 2020; 20:2907-2915. [PMID: 32196351 DOI: 10.1021/acs.nanolett.0c00741] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration as they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of "all-2D" vdW heterojunctions. Here, we demonstrate 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over 7 orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi level tuning at the junction, opening up possibilities for novel 2D/3D heterojunction device architectures.
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Affiliation(s)
- Jinshui Miao
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Xiwen Liu
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Kiyoung Jo
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Kang He
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Ravindra Saxena
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Baokun Song
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jiale He
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Myung-Geun Han
- Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Weida Hu
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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Wu G, Wang X, Chen Y, Wu S, Wu B, Jiang Y, Shen H, Lin T, Liu Q, Wang X, Zhou P, Zhang S, Hu W, Meng X, Chu J, Wang J. MoTe 2 p-n Homojunctions Defined by Ferroelectric Polarization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907937. [PMID: 32104952 DOI: 10.1002/adma.201907937] [Citation(s) in RCA: 53] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2019] [Revised: 01/14/2020] [Indexed: 05/16/2023]
Abstract
Doped p-n junctions are fundamental electrical components in modern electronics and optoelectronics. Due to the development of device miniaturization, the emergence of two-dimensional (2D) materials may initiate the next technological leap toward the post-Moore era owing to their unique structures and physical properties. The purpose of fabricating 2D p-n junctions has fueled many carrier-type modulation methods, such as electrostatic doping, surface modification, and element intercalation. Here, by using the nonvolatile ferroelectric field polarized in the opposite direction, efficient carrier modulation in ambipolar molybdenum telluride (MoTe2 ) to form a p-n homojunction at the domain wall is demonstrated. The nonvolatile MoTe2 p-n junction can be converted to n-p, n-n, and p-p configurations by external gate voltage pulses. Both rectifier diodes exhibited excellent rectifying characteristics with a current on/off ratio of 5 × 105 . As a photodetector/photovoltaic, the device presents responsivity of 5 A W-1 , external quantum efficiency of 40%, specific detectivity of 3 × 1012 Jones, fast response time of 30 µs, and power conversion efficiency of 2.5% without any bias or gate voltages. The MoTe2 p-n junction presents an obvious short-wavelength infrared photoresponse at room temperature, complementing the current infrared photodetectors with the inadequacies of complementary metal-oxide-semiconductor incompatibility and cryogenic operation temperature.
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Affiliation(s)
- Guangjian Wu
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Yan Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Shuaiqin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Binmin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Yiyang Jiang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Qi Liu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Xinran Wang
- School of Electronic Science and Engineering, Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing, 210093, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 220 Handan Road, Shanghai, 200433, China
| | - Shantao Zhang
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Junhao Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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Spiking neurons from tunable Gaussian heterojunction transistors. Nat Commun 2020; 11:1565. [PMID: 32218433 PMCID: PMC7099079 DOI: 10.1038/s41467-020-15378-7] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2019] [Accepted: 03/03/2020] [Indexed: 11/16/2022] Open
Abstract
Spiking neural networks exploit spatiotemporal processing, spiking sparsity, and high interneuron bandwidth to maximize the energy efficiency of neuromorphic computing. While conventional silicon-based technology can be used in this context, the resulting neuron-synapse circuits require multiple transistors and complicated layouts that limit integration density. Here, we demonstrate unprecedented electrostatic control of dual-gated Gaussian heterojunction transistors for simplified spiking neuron implementation. These devices employ wafer-scale mixed-dimensional van der Waals heterojunctions consisting of chemical vapor deposited monolayer molybdenum disulfide and solution-processed semiconducting single-walled carbon nanotubes to emulate the spike-generating ion channels in biological neurons. Circuits based on these dual-gated Gaussian devices enable a variety of biological spiking responses including phasic spiking, delayed spiking, and tonic bursting. In addition to neuromorphic computing, the tunable Gaussian response has significant implications for a range of other applications including telecommunications, computer vision, and natural language processing. Designing high performance, scalable, and energy efficient spiking neural networks remains a challenge. Here, the authors utilize mixed-dimensional dual-gated Gaussian heterojunction transistors from single-walled carbon nanotubes and monolayer MoS2 to realize simplified spiking neuron circuits.
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48
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Zhang J, Cong L, Zhang K, Jin X, Li X, Wei Y, Li Q, Jiang K, Luo Y, Fan S. Mixed-Dimensional Vertical Point p -n Junctions. ACS NANO 2020; 14:3181-3189. [PMID: 32083843 DOI: 10.1021/acsnano.9b08367] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Mixed-dimensional van der Waals (vdW) heterostructures composed of one-dimensional (1D) and two-dimensional (2D) materials have exhibited great potential in nanoelectronics and nano-optoelectronics. In this study, we present a vertical point p-n junction (VPpnJ), in which a vertical stacked molybdenum disulfide/tungsten diselenide p-n junction is sandwiched between two cross-stacked metallic carbon nanotubes (CNTs). The device can be transformed from p-n junction to n-n junction via gate modulation. As a photodetector, the VPpnJ device can work in three different modes by setting the appropriate gating voltages. The photosensitive areas are localized around the top CNT, bottom CNT, and the cross point at VG = -10 V, 10 V, and ∼0 V, respectively. In the p-n regime at the negative gate voltage, the VPpnJ device showed an obvious photovoltaic effect. The external quantum efficiency of the VPpnJ can reach 42.7%. The electrical control of the electronic and optoelectronic characteristics can be mainly attributed to the gate-tunable interfacial built-in electric fields in the heterostructures. The progress also reveals the functional diversity of such 1D/2D mixed-dimensional heterostructures, which will be prospects for future nanoelectronics and nano-optoelectronics.
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Affiliation(s)
- Jin Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Lin Cong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Ke Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Xiang Jin
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Xuanzhang Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Yang Wei
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Qunqing Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Kaili Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Yi Luo
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
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Li S, Zhong C, Henning A, Sangwan VK, Zhou Q, Liu X, Rahn MS, Wells SA, Park HY, Luxa J, Sofer Z, Facchetti A, Darancet P, Marks TJ, Lauhon LJ, Weiss EA, Hersam MC. Molecular-Scale Characterization of Photoinduced Charge Separation in Mixed-Dimensional InSe-Organic van der Waals Heterostructures. ACS NANO 2020; 14:3509-3518. [PMID: 32078300 DOI: 10.1021/acsnano.9b09661] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Layered indium selenide (InSe) is an emerging two-dimensional semiconductor that has shown significant promise for high-performance transistors and photodetectors. The range of optoelectronic applications for InSe can potentially be broadened by forming mixed-dimensional van der Waals heterostructures with zero-dimensional molecular systems that are widely employed in organic electronics and photovoltaics. Here, we report the spatially resolved investigation of photoinduced charge separation between InSe and two molecules (C70 and C8-BTBT) using scanning tunneling microscopy combined with laser illumination. We experimentally and computationally show that InSe forms type-II and type-I heterojunctions with C70 and C8-BTBT, respectively, due to an interplay of charge transfer and dielectric screening at the interface. Laser-excited scanning tunneling spectroscopy reveals a ∼0.25 eV decrease in the energy of the lowest unoccupied molecular orbital of C70 with optical illumination. Furthermore, photoluminescence spectroscopy and Kelvin probe force microscopy indicate that electron transfer from InSe to C70 in the type-II heterojunction induces a photovoltage that quantitatively matches the observed downshift in the tunneling spectra. In contrast, no significant changes are observed upon optical illumination in the type-I heterojunction formed between InSe and C8-BTBT. Density functional theory calculations further show that, despite the weak coupling between the molecular species and InSe, the band alignment of these mixed-dimensional heterostructures strongly differs from the one suggested by the ionization potential and electronic affinities of the isolated components. Self-energy-corrected density functional theory indicates that these effects are the result of the combination of charge redistribution at the interface and heterogeneous dielectric screening of the electron-electron interactions in the heterostructure. In addition to providing specific insight for mixed-dimensional InSe-organic van der Waals heterostructures, this work establishes a general experimental methodology for studying localized charge transfer at the molecular scale that is applicable to other photoactive nanoscale systems.
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Affiliation(s)
- Shaowei Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Chengmei Zhong
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Alex Henning
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Qunfei Zhou
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute for Science and Engineering, Evanston, Illinois 60208, United States
| | - Xiaolong Liu
- Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Matthew S Rahn
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Spencer A Wells
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Hong Youl Park
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Jan Luxa
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Antonio Facchetti
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Pierre Darancet
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute for Science and Engineering, Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Emily A Weiss
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
- Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208-3113, United States
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50
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Wei S, Wang F, Zou X, Wang L, Liu C, Liu X, Hu W, Fan Z, Ho JC, Liao L. Flexible Quasi-2D Perovskite/IGZO Phototransistors for Ultrasensitive and Broadband Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907527. [PMID: 31867813 DOI: 10.1002/adma.201907527] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2019] [Revised: 12/08/2019] [Indexed: 06/10/2023]
Abstract
Organic-inorganic hybrid perovskites (PVKs) have recently emerged as attractive materials for photodetectors. However, the poor stability and low electrical conductivity still restrict their practical utilization. Owing to the quantum-well feature of two-dimensional (2D) Ruddlesden-Popper PVKs (2D PVKs), a promising quasi-2D PVK/indium gallium zinc oxide (IGZO) heterostructure phototransistor can be designed. By using a simple ligand-exchange spin-coating method, quasi-2D PVK fabricated on flexible substrates exhibits a desirable type-II energy band alignment, which facilitates effective spatial separation of photoexcited carriers. The device exhibits excellent photoresponsivity values of >105 A W-1 at 457 nm, and broadband photoresponse (457-1064 nm). By operating the device in the depletion regime, the specific detectivity is found to be 5.1 × 1016 Jones, which is the record high value among all PVK-based photodetectors reported to date. Due to the resistive hopping barrier in the quasi-2D PVK, the device can also work as an optoelectronic memory for near-infrared information storage. More importantly, the easy manufacturing process is highly beneficial, enabling large-scale and uniform quasi-2D PVK/IGZO hybrid films for detector arrays with outstanding ambient and operation stabilities. All these findings demonstrate the device architecture here provides a rational avenue to the design of next-generation flexible photodetectors with unprecedented sensitivity.
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Affiliation(s)
- Shali Wei
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200000, China
| | - Xuming Zou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Liming Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Chang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xingqiang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200000, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, China
| | - Lei Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
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