Voltage-controlled optics of a quantum dot

Monolithic Polarizing Circular Dielectric Gratings on Bulk Substrates for Improved Photon Collection from InAs Quantum Dots

III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving useful in an increasingly broad application space. Here, we develop monolithic circular dielectric gratings on bulk substrates - as opposed to suspended or wafer-bonded substrates - for greatly improved photon collection from InAs quantum dots. The structures utilize a unique two-tiered distributed Bragg reflector (DBR) structure for vertical electric field confinement over a broad angular range. Opposing "openings" in the cavities induce strongly polarized QD luminescence without harming collection efficiencies. We describe how measured enhancements depend on the choice of collection optics. This is important to consider when evaluating the performance of any photonic structure that concentrates farfield emission intensity. Our cavity designs are useful for integrating QDs with other quantum systems that require bulk substrates, such as surface acoustic wave phonons.

Energy absorbed from double quantum dot-metal nanoparticle hybrid system

This work proposes the double quantum dot (DQD)-metal nanoparticle (MNP) hybrid system for a high energy absorption rate. The structure is modeled using density matrix equations that consider the interaction between excitons and surface plasmons. The wetting layer (WL)-DQD transitions are considered, and the orthogonalized plane wave (OPW) between these transitions is considered. The DQD energy states and momentum calculations with OPW are the figure of merit recognizing this DQD-MNP work. The results show that at the high pump and probe application, the total absorption rate [Formula: see text] of the DQD-MNP hybrid system is increased by reducing the distance between DQD-MNP. The high [Formula: see text] obtained may relate to two reasons: first, the WL washes out modes other than the condensated main mode. Second, the high flexibility of manipulating DQD states compared to QD states results in more optical properties for DQD. The [Formula: see text] is increased at a small MNP radius on the contrary to the [Formula: see text] which is increased at a wider MNP radius. Under high tunneling, a broader blue shift in the [Formula: see text] due to the destructive interference between fields is seen and the synchronization between [Formula: see text] and [Formula: see text] is destroyed. [Formula: see text] for the DQD-MNP is increased by six orders while [Formula: see text] is by eight orders compared to the single QD-MNP hybrid system. The high absorption rate of the DQD-MNP hybrid system comes from the transition possibilities and flexibility of choosing the transitions in the DQD system, which strengthens the transitions and increases the linear and nonlinear optical properties. This will make the DQD-MNP hybrid systems preferable to QD-MNP systems.

Restoring the Coherence of Quantum Emitters through Optically Driven Motional Narrowing Forces

Motional narrowing is a phenomenon by which a quantum state can be entangled with a noisy environment and still retain its intrinsic coherence. Using two optically induced motional forces driving the environmental electrical field amplitude and fluctuations, we present a compelling illustration of the effects of motional narrowing on the energy, line shape, and line width of a single quantum emitter, a Te₂ molecule embedded in ZnSe, subject to spectral diffusion. Motional narrowing is achieved in several regimes, irrespectively of the inhomogeneous disorder initially present and the charge reservoir state sourcing the field. The optimal coherence limit set by the radiative rate can be approached by accelerating spectral diffusion into the THz regime. Motional narrowing applies to any quantum systems for which environmental fluctuations can be deliberately accelerated and alleviates the need for perfected materials and devices.

Probing Permanent Dipole Moments and Removing Exciton Fine Structures in Single Perovskite Nanocrystals by an Electric Field

Single perovskite nanocrystals have emerged as a novel type of semiconductor nanostructure capable of emitting single photons with rich exciton species and fine energy-level structures. Here we focus on single excitons and biexcitons in single perovskite CsPbI_{3} nanocrystals to show, for the first time, how their optical properties are modulated by an external electric field at the cryogenic temperature. The electric field can cause a blueshift in the photoluminescence peak of single excitons, from which the existence of a permanent dipole moment can be deduced. Meanwhile, the fine energy-level structures of single excitons and biexcitons in a single CsPbI_{3} nanocrystal can be simultaneously eliminated, thus preparing a potent platform for the potential generation of polarization-entangled photon pairs.

Real-Time Detection of Single Auger Recombination Events in a Self-Assembled Quantum Dot

Auger recombination is a nonradiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an Auger recombination time below nanoseconds. In self-assembled QDs, the Auger recombination has been observed with a much longer recombination time on the order of microseconds. Here, we use two-color laser excitation on the exciton and trion transition in resonance fluorescence on a single self-assembled quantum dot to monitor in real-time single quantum events of the Auger process. Full counting statistics on the random telegraph signal give access to the cumulants and demonstrate the tunability of the Fano factor from a Poissonian to a sub-Poissonian distribution by Auger-mediated electron emission from the dot. Therefore, the Auger process can be used to tune optically the charge carrier occupation of the dot by the incident laser intensity, independently from the electron tunneling from the reservoir by the gate voltage. Our findings are not only highly relevant for the understanding of the Auger process but also demonstrate the perspective of the Auger effect for controlling precisely the charge state in a quantum system by optical means.

A gated quantum dot strongly coupled to an optical microcavity

The strong-coupling regime of cavity quantum electrodynamics (QED) represents the light-matter interaction at the fully quantum level. Adding a single photon shifts the resonance frequencies-a profound nonlinearity. Cavity QED is a test bed for quantum optics^1-3 and the basis of photon-photon and atom-atom entangling gates^4,5. At microwave frequencies, cavity QED has had a transformative effect⁶, enabling qubit readout and qubit couplings in superconducting circuits. At optical frequencies, the gates are potentially much faster; the photons can propagate over long distances and can be easily detected. Following pioneering work on single atoms^1-3,7, solid-state implementations using semiconductor quantum dots are emerging^8-15. However, miniaturizing semiconductor cavities without introducing charge noise and scattering losses remains a challenge. Here we present a gated, ultralow-loss, frequency-tunable microcavity device. The gates allow both the quantum dot charge and its resonance frequency to be controlled electrically. Furthermore, cavity feeding^10,11,13-17, the observation of the bare-cavity mode even at the quantum dot-cavity resonance, is eliminated. Even inside the microcavity, the quantum dot has a linewidth close to the radiative limit. In addition to a very pronounced avoided crossing in the spectral domain, we observe a clear coherent exchange of a single energy quantum between the 'atom' (the quantum dot) and the cavity in the time domain (vacuum Rabi oscillations), whereas decoherence arises mainly via the atom and photon loss channels. This coherence is exploited to probe the transitions between the singly and doubly excited photon-atom system using photon-statistics spectroscopy¹⁸. The work establishes a route to the development of semiconductor-based quantum photonics, such as single-photon sources and photon-photon gates.

Contrast of 83% in reflection measurements on a single quantum dot

We report on a high optical contrast between the photon emission from a single self-assembled quantum dot (QD) and the back-scattered excitation laser light. In an optimized semiconductor heterostructure with an epitaxially grown gate, an optically-matched layer structure and a distributed Bragg reflector, a record value of 83% is obtained; with tilted laser excitation even 885%. This enables measurements on a single dot without lock-in technique or suppression of the laser background by cross-polarization. These findings open up the possibility to perform simultaneously time-resolved and polarization-dependent resonant optical spectroscopy on a single quantum dot.

Optical initialization of a single spin-valley in charged WSe2 quantum dots

Control and manipulation of single charges and their internal degrees of freedom, such as spin, may enable applications in quantum information technology, spintronics and quantum sensing^1,2. Recently, atomically thin semiconductors with a direct bandgap such as group VI-B transition-metal dichalcogenide monolayers have emerged as a platform for valleytronics-the study of the valley degree of freedom of charge carriers to store and control information. They offer optical, magnetic and electrical control of the valley index, which, with the spin, is locked into a robust spin-valley index^3,4. However, because recombination lifetimes of photogenerated excitations in transition-metal dichalcogenides are of the order of a few picoseconds, optically generated valley excitons possess similar lifetimes. On the other hand, the valley polarization of free holes has a lifetime of microseconds^5-9. Whereas progress has been made in optical control of the valley index in ensembles of charge carriers^10-12, valley control of individual charges, which is crucial for valleytronics, remains unexplored. Here we provide unambiguous evidence for localized holes with a net spin in optically active WSe₂ quantum dots^13-17 and we initialize their spin-valley state with the helicity of the excitation laser under small magnetic fields. Under such conditions, we estimate a lower bound of the valley lifetime of a single charge in a quantum dot from the recombination time to be of the order of nanoseconds. Remarkably, neutral quantum dots do not exhibit such spin-valley initialization, which illustrates the role of the excess charge in prolonging the valley lifetime. Our work extends the field of two-dimensional valleytronics to the level of single spin- valleys, with implications for quantum information and sensing applications.

Coherent single-photon emission from colloidal lead halide perovskite quantum dots

Chemically made colloidal semiconductor quantum dots have long been proposed as scalable and color-tunable single emitters in quantum optics, but they have typically suffered from prohibitively incoherent emission. We now demonstrate that individual colloidal lead halide perovskite quantum dots (PQDs) display highly efficient single-photon emission with optical coherence times as long as 80 picoseconds, an appreciable fraction of their 210-picosecond radiative lifetimes. These measurements suggest that PQDs should be explored as building blocks in sources of indistinguishable single photons and entangled photon pairs. Our results present a starting point for the rational design of lead halide perovskite–based quantum emitters that have fast emission, wide spectral tunability, and scalable production and that benefit from the hybrid integration with nanophotonic components that has been demonstrated for colloidal materials.

Quantum Optics with Near-Lifetime-Limited Quantum-Dot Transitions in a Nanophotonic Waveguide

Establishing a highly efficient photon-emitter interface where the intrinsic linewidth broadening is limited solely by spontaneous emission is a key step in quantum optics. It opens a pathway to coherent light-matter interaction for, e.g., the generation of highly indistinguishable photons, few-photon optical nonlinearities, and photon-emitter quantum gates. However, residual broadening mechanisms are ubiquitous and need to be combated. For solid-state emitters charge and nuclear spin noise are of importance, and the influence of photonic nanostructures on the broadening has not been clarified. We present near-lifetime-limited linewidths for quantum dots embedded in nanophotonic waveguides through a resonant transmission experiment. It is found that the scattering of single photons from the quantum dot can be obtained with an extinction of 66 ± 4%, which is limited by the coupling of the quantum dot to the nanostructure rather than the linewidth broadening. This is obtained by embedding the quantum dot in an electrically contacted nanophotonic membrane. A clear pathway to obtaining even larger single-photon extinction is laid out; i.e., the approach enables a fully deterministic and coherent photon-emitter interface in the solid state that is operated at optical frequencies.

Crystal Phase Quantum Well Emission with Digital Control

One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

Bright-Exciton Fine-Structure Splittings in Single Perovskite Nanocrystals

Here we show that, in single perovskite CsPbI_{3} nanocrystals synthesized from a colloidal approach, a bright-exciton fine-structure splitting as large as hundreds of μeV can be resolved with two orthogonally and linearly polarized photoluminescence peaks. This doublet could switch to a single peak when a single CsPbI_{3} nanocrystal is photocharged to eliminate the electron-hole exchange interaction. The above findings have prepared an efficient platform suitable for probing exciton and spin dynamics of semiconductor nanostructures at the visible-wavelength range, from which a variety of practical applications such as in entangled photon-pair source and quantum information processing can be envisioned.

Screening Nuclear Field Fluctuations in Quantum Dots for Indistinguishable Photon Generation

A semiconductor quantum dot can generate highly coherent and indistinguishable single photons. However, intrinsic semiconductor dephasing mechanisms can reduce the visibility of two-photon interference. For an electron in a quantum dot, a fundamental dephasing process is the hyperfine interaction with the nuclear spin bath. Here, we directly probe the consequence of the fluctuating nuclear spins on the elastic and inelastic scattered photon spectra from a resident electron in a single dot. We find the in-plane component of the nuclear Overhauser field leads to detuned Raman scattered photons, broadened over experimental time scales by field fluctuations, which are distinguishable from both the elastic and incoherent components of the resonance fluorescence. This significantly reduces two-photon interference visibility. However, we demonstrate successful screening of the nuclear spin noise, which enables the generation of coherent single photons that exhibit high visibility two-photon interference.

Transform-limited single photons from a single quantum dot

Developing a quantum photonics network requires a source of very-high-fidelity single photons. An outstanding challenge is to produce a transform-limited single-photon emitter to guarantee that single photons emitted far apart in the time domain are truly indistinguishable. This is particularly difficult in the solid-state as the complex environment is the source of noise over a wide bandwidth. A quantum dot is a robust, fast, bright and narrow-linewidth emitter of single photons; layer-by-layer growth and subsequent nano-fabrication allow the electronic and photonic states to be engineered. This represents a set of features not shared by any other emitter but transform-limited linewidths have been elusive. Here, we report transform-limited linewidths measured on second timescales, primarily on the neutral exciton but also on the charged exciton close to saturation. The key feature is control of the nuclear spins, which dominate the exciton dephasing via the Overhauser field.

Photons emitted from a quantum dot typically have slightly different frequencies owing to various sources of noise. Here, the authors suppress the noise, notably the noise arising from the nuclear spins, and demonstrate single-photon emission with a transform-limited optical linewidth.

Towards Scalable Entangled Photon Sources with Self-Assembled InAs/GaAs Quantum Dots

The biexciton cascade process in self-assembled quantum dots (QDs) provides an ideal system for realizing deterministic entangled photon-pair sources, which are essential to quantum information science. The entangled photon pairs have recently been generated in experiments after eliminating the fine-structure splitting (FSS) of excitons using a number of different methods. Thus far, however, QD-based sources of entangled photons have not been scalable because the wavelengths of QDs differ from dot to dot. Here, we propose a wavelength-tunable entangled photon emitter mounted on a three-dimensional stressor, in which the FSS and exciton energy can be tuned independently, thereby enabling photon entanglement between dissimilar QDs. We confirm these results via atomistic pseudopotential calculations. This provides a first step towards future realization of scalable entangled photon generators for quantum information applications.

Full counting statistics of quantum dot resonance fluorescence

The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the prospects of quantum dots as sources of indistinguishable photons in optical quantum computing. Here, we present an analysis of resonance fluorescence fluctuations based on photon counting statistics which captures the underlying time-averaged electric field fluctuations of the local environment. The measurement protocol avoids dynamic feedback on the electric environment and the dynamics of the quantum dot's nuclear spin bath by virtue of its resonant nature and by keeping experimental control parameters such as excitation frequency and external fields constant throughout. The method introduced here is experimentally undemanding.

High resolution coherent population trapping on a single hole spin in a semiconductor quantum dot

We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physicslike dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing. We identify the cause of this process as charge noise by, first, demonstrating that the hole spin g factor in this configuration (in-plane magnetic field) is strongly dependent on the vertical electric field, and second, by characterizing the charge noise through its effects on the optical transition frequency. An important conclusion is that charge noise is an important hole spin dephasing process.

A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10(7) and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920-980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

Single spins in self-assembled quantum dots

Self-assembled quantum dots have excellent photonic properties. For instance, a single quantum dot is a high-brightness, narrow-linewidth source of single photons. Furthermore, the environment of a single quantum dot can be tailored relatively easily using semiconductor heterostructure and post-growth processing techniques, enabling electrical control of the quantum dot charge and control over the photonic modes with which the quantum dot interacts. A single electron or hole trapped inside a quantum dot has spintronics applications. Although the spin dephasing is rather rapid, a single spin can be manipulated using optical techniques on subnanosecond timescales. Optical experiments are also providing new insights into old issues, such as the central spin problem. This Review provides a snapshot of this active field, with some indications for the future. It covers the basic materials and optical properties of single quantum dots, techniques for initializing, manipulating and reading out single spin qubits, and the mechanisms that limit the electron-spin and hole-spin coherence.

Confinement and interaction of single indirect excitons in a voltage-controlled trap formed inside double InGaAs quantum Wells

Voltage-tunable quantum traps confining individual spatially indirect and long-living excitons are realized by providing a coupled double quantum well with nanoscale gates. This enables us to study the transition from confined multiexcitons down to a single, electrostatically trapped indirect exciton. In the few exciton regime, we observe discrete emission lines identified as resulting from a single dipolar exciton, a biexciton, and a triexciton, respectively. Their energetic splitting is well described by Wigner-like molecular structures reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization.

Field-field and photon-photon correlations of light scattered by two remote two-level InAs quantum dots on the same substrate

We report the measurement of field-field and photon-photon correlations of light scattered by two InAs quantum dots separated by ≈40  μm. Near 4 K a large fraction of photons can be scattered coherently by each quantum dot leading to one-photon interference at a beam splitter (visibility ≈20%). Simultaneously, two-photon interference is also observed (visibility ≈40%) due to the indistinguishability of photons scattered by the two different quantum emitters. We show how spectral diffusion accounts for the reduction in interference visibility through variations in photon flux.

Dynamic nuclear spin polarization in the resonant laser excitation of an InGaAs quantum dot

Resonant optical excitation of lowest-energy excitonic transitions in self-assembled quantum dots leads to nuclear spin polarization that is qualitatively different from the well-known optical orientation phenomena. By carrying out a comprehensive set of experiments, we demonstrate that nuclear spin polarization manifests itself in quantum dots subjected to finite external magnetic field as locking of the higher energy Zeeman transition to the driving laser field, as well as the avoidance of the resonance condition for the lower energy Zeeman branch. We interpret our findings on the basis of dynamic nuclear spin polarization originating from noncollinear hyperfine interaction and find excellent agreement between experiment and theory. Our results provide evidence for the significance of noncollinear hyperfine processes not only for nuclear spin diffusion and decay, but also for buildup dynamics of nuclear spin polarization in a coupled electron-nuclear spin system.

Probing single-charge fluctuations at a GaAs/AlAs interface using laser spectroscopy on a nearby InGaAs quantum dot

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with ±5  nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.

Excited-state spectroscopy on an individual quantum dot using atomic force microscopy

We present a new charge sensing technique for the excited-state spectroscopy of individual quantum dots, which requires no patterned electrodes. An oscillating atomic force microscope cantilever is used as a movable charge sensor as well as gate to measure the single-electron tunneling between an individual self-assembled InAs quantum dot and back electrode. A set of cantilever dissipation versus bias voltage curves measured at different cantilever oscillation amplitudes forms a diagram analogous to the Coulomb diamond usually measured with transport measurements. The excited-state levels as well as the electron addition spectrum can be obtained from the diagram. In addition, a signature which can result from inelastic tunneling by phonon emission or a peak in the density of states of the electrode is also observed, which demonstrates the versatility of the technique.

Optically gated resonant emission of single quantum dots

We report on the resonant emission in coherently driven single semiconductor quantum dots. We demonstrate that an ultraweak nonresonant laser acts as an optical gate for the quantum dot resonant response. We show that the gate laser suppresses Coulomb blockade at the origin of a resonant emission quenching, and that the optically gated quantum dots systematically behave as ideal two-level systems in both regimes of coherent and incoherent resonant emission.

Hyperfine interaction-dominated dynamics of nuclear spins in self-assembled InGaAs quantum dots

We measure the dynamics of nuclear spins in a single-electron charged self-assembled InGaAs quantum dot with negligible nuclear spin diffusion due to dipole-dipole interaction and identify two distinct mechanisms responsible for the decay of the Overhauser field. We attribute a temperature-independent decay lasting ∼100 sec at 5 T to intradot diffusion induced by hyperfine-mediated indirect nuclear spin interaction. By repeated polarization of the nuclear spins, this diffusion induced partial decay can be suppressed. We also observe a gate voltage and temperature-dependent decay stemming from cotunneling mediated nuclear spin flips that can be prolonged to ∼30 h by adjusting the gate voltage and lowering the temperature to ∼200 mK. Our measurements indicate possibilities for exploring quantum dynamics of the central spin model.

Optical stark effect and dressed exciton states in a Mn-doped CdTe quantum dot

We report on the observation of spin-dependent optically dressed states and the optical Stark effect on an individual Mn spin in a semiconductor quantum dot. The vacuum-to-exciton or the exciton-to-biexciton transitions in a Mn-doped quantum dot are optically dressed by a strong laser field, and the resulting spectral signature is measured in photoluminescence. We demonstrate that the energy of any spin state of a Mn atom can be independently tuned by using the optical Stark effect induced by a control laser. High resolution spectroscopy reveals a power-, polarization-, and detuning-dependent Autler-Townes splitting of each optical transition of the Mn-doped quantum dot. This experiment demonstrates an optical resonant control of the exciton-Mn system.

Semiconductor self-assembled quantum dots: present status and future trends

Progress in controlling the size, shape, and composition of quantum dots (QDs) as well as their positioning will be crucial to further advances in the fields of quantum information and device applications. The growth of QDs into lattices using controlled positioning of the QD nucleation centers is a possible method. QD positioning is also much needed for further development of QD microcavities and photonic-crystal based devices that are used for quantum information applications. This article discusses the prospects for progress in these fields that may be realized if a better control over the positioning and self-positioning of quantum dots is achieved.

Many-body dynamics of exciton creation in a quantum dot by optical absorption: a quantum quench towards Kondo correlations

We study a quantum quench for a semiconductor quantum dot coupled to a fermionic reservoir, induced by the sudden creation of an exciton via optical absorption. The subsequent emergence of correlations between spin degrees of freedom of dot and reservoir, culminating in the Kondo effect, can be read off from the absorption line shape and understood in terms of the three fixed points of the single-impurity Anderson model. At low temperatures the line shape is dominated by a power-law singularity, with an exponent that depends on gate voltage and, in a universal, asymmetric fashion, on magnetic field, indicative of a tunable Anderson orthogonality catastrophe.

Control and coherence of the optical transition of single nitrogen vacancy centers in diamond

We demonstrate coherent control of the optical transition of single nitrogen-vacancy defect centers in diamond. On applying short resonant laser pulses, we observe optical Rabi oscillations with a half period as short as 1 ns, an order of magnitude shorter than the spontaneous emission time. By studying the decay of Rabi oscillations, we find that the decoherence is dominated by laser-induced spectral jumps. By using a low-power probe pulse as a detuning sensor and applying postselection, we demonstrate that spectral diffusion can be overcome in this system to generate coherent photons.

Lower bound for the excitonic fine structure splitting in self-assembled quantum dots

The excitonic fine structure splitting describes the splitting of the bright excitons as a consequence of the atomistic symmetry of the lattice and the electron-hole exchange interaction. Efforts are underway to eliminate this natural splitting by external constraints in order to use quantum dots in quantum optics. We show by million atom empirical pseudopotential calculations that for realistic structures a lower bound for this splitting exists. We underpin our numerical calculations by an insightful symmetry analysis.

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods

We have investigated, using micro-photoluminescence, the quantum confined Stark effect in an In(x)Ga(1-x)N/GaN multi-quantum disk structure at the tip of a single GaN nanorod. A strong and sharp emission line from the In(x)Ga(1-x)N/GaN quantum disks near 3.26 eV was observed. The peak energy of the emission line was observed to blue-shift with increasing excitation power, indicating a quantum confined Stark effect. Furthermore, both the blue-shift and the intensity of the emission saturate with increasing excitation power. The temperature-dependence of the 3.26 eV emission line has also been investigated.

Resonant excitation of a quantum dot strongly coupled to a photonic crystal nanocavity

We describe the resonant excitation of a single quantum dot that is strongly coupled to a photonic crystal nanocavity. The cavity represents a spectral window for resonantly probing the optical transitions of the quantum dot. We observe narrow absorption lines attributed to the single and biexcition quantum dot transitions and measure antibunched population of the detuned cavity mode [g{(2)}(0)=0.19].

Fast electrical control of a quantum dot strongly coupled to a photonic-crystal cavity

The resonance frequency of an InAs quantum dot strongly coupled to a GaAs photonic-crystal cavity was electrically controlled via the quadratic quantum confined Stark effect. Stark shifts up to 0.3 meV were achieved using a lateral Schottky electrode that created a local depletion region at the location of the quantum dot. We report switching of a probe laser coherently coupled to the cavity up to speeds as high as 150 MHz, limited by the RC constant of the transmission line. The coupling strength g and the magnitude of the Stark shift with electric field were investigated while coherently probing the system.

Photoluminescence of a quantum dot hybridized with a continuum of extended states

We calculate the intensity of photon emission from a trion in a single quantum dot, as a function of energy and gate voltage, using the impurity Anderson model and variational wave functions. Assuming a flat density of conduction states and constant hybridization energy, the results agree with the main features observed in recent experiments: nonmonotonic dependence of the energy on gate voltage, non-Lorentzian line shapes, and a linewidth that increases near the regions of instability of the single electron final state to occupations zero or two.

Optically tunable spontaneous Raman fluorescence from a single self-assembled InGaAs quantum dot

We report the observation of all-optically tunable Raman fluorescence from a single quantum dot. The Raman photons are produced in an optically driven Lambda system defined by subjecting the single electron charged quantum dot to a magnetic field in Voigt geometry. Detuning the driving laser from resonance, we tune the frequency of the Raman photons by about 2.5 GHz. The number of scattered photons and the linewidth of the Raman photons are investigated as a function of detuning. The study presented here could form the basis of a new technique for investigating spin-bath interactions in the solid state.

Diamagnetic response of exciton complexes in semiconductor quantum dots

We report measurements of diamagnetic shifts for different exciton complexes confined in small InAs quantum dots. The measured diamagnetic responses are sensitive to the number of carriers in the exciton complexes, with systematic differences between neutral excitons, biexcitons, and trions. Theoretical calculations suggest that such systematic differences arise from very different extents of electron and hole wave functions confined in small quantum dots. The measured magnetic response of Coulomb energies is found to vary with the cube of the wave function extent, and can be a sensitive probe to the electron-hole wave function asymmetry.

Optical spin initialization and nondestructive measurement in a quantum dot molecule

The spin of an electron in a self-assembled InAs/GaAs quantum dot molecule is optically prepared and measured through the trion triplet states. A longitudinal magnetic field is used to tune two of the trion states into resonance, forming a superposition state through asymmetric spin exchange. As a result, spin-flip Raman transitions can be used for optical spin initialization, while separate trion states enable cycling transitions for nondestructive measurement. With two-laser transmission spectroscopy we demonstrate both operations simultaneously, something not previously accomplished in a single quantum dot.

Single charged quantum dot in a strong optical field: absorption, gain, and the ac-Stark effect

We investigate a singly charged quantum dot under a strong optical driving field by probing the system with a weak optical field. We observe all critical features predicted by Mollow for a strongly driven two-level atomic system in this solid state nanostructure, such as absorption, the ac-Stark effect, and optical gain. Our results demonstrate that even at high optical field strengths the electron in a single quantum dot with its dressed ground state and trion state behaves as a well-isolated two-level quantum system.

Highly reduced fine-structure splitting in InAs/InP quantum dots offering an efficient on-demand entangled 1.55-microm photon emitter

To generate entangled photon pairs via quantum dots (QDs), the exciton fine-structure splitting (FSS) must be comparable to the exciton homogeneous linewidth. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens microeV. To achieve photon entanglement, it is necessary to cherry-pick a sample with extremely small FSS from a large number of samples or to apply a strong in-plane magnetic field. Using theoretical modeling of the fundamental causes of FSS in QDs, we predict that the intrinsic FSS of InAs/InP QDs is an order of magnitude smaller than that of InAs/GaAs dots, and, better yet, their excitonic gap matches the 1.55 microm fiber optic wavelength and, therefore, offers efficient on-demand entangled photon emitters for long distance quantum communication.

Dipole induced transparency in waveguide coupled photonic crystal cavities

We demonstrate dipole induced transparency in an integrated photonic crystal device. We show that a single weakly coupled quantum dot can control the transmission of photons through a photonic crystal cavity that is coupled to waveguides on the chip. Control over the quantum dot and cavity resonance via local temperature tuning, as well as efficient out-coupling with an integrated grating structure is demonstrated.

Observation of dressed excitonic states in a single quantum dot

We report the observation of dressed states of a quantum dot. The optically excited exciton and biexciton states of the quantum dot are coupled by a strong laser field and the resulting spectral signatures are measured using differential transmission of a probe field. We demonstrate that the anisotropic electron-hole exchange interaction induced splitting between the x- and y-polarized excitonic states can be completely erased by using the ac-Stark effect induced by the coupling field, without causing any appreciable broadening of the spectral lines. We also show that by varying the polarization and strength of a resonant coupling field, we can effectively change the polarization axis of the quantum dot.

Optically induced hybridization of a quantum dot state with a filled continuum

We present an optical signature of a hybridization between a localized quantum dot state and a filled continuum. Radiative recombination of the negatively charged trion in a single quantum dot leaves behind a single electron. We show that in two regions of vertical electric field, the electron hybridizes with a continuum through a tunneling interaction. The hybridization manifests itself through an unusual voltage dependence of the emission energy and a non-Lorentzian line shape, features which we reproduce with a theory based on the Anderson Hamiltonian.

Optical detection of single-electron spin resonance in a quantum dot

We demonstrate optically detected spin resonance of a single electron confined to a self-assembled quantum dot. The dot is rendered dark by resonant optical pumping of the spin with a laser. Contrast is restored by applying a radio frequency (rf) magnetic field at the spin resonance. The scheme is sensitive even to rf fields of just a few microT. In one case, the spin resonance behaves as a driven 3-level lambda system with weak damping; in another one, the dot exhibits remarkably strong (67% signal recovery) and narrow (0.34 MHz) spin resonances with fluctuating resonant positions, evidence of unusual dynamic processes.

The nonlinear Fano effect

The Fano effect is ubiquitous in the spectroscopy of, for instance, atoms, bulk solids and semiconductor heterostructures. It arises when quantum interference takes place between two competing optical pathways, one connecting the energy ground state and an excited discrete state, the other connecting the ground state with a continuum of energy states. The nature of the interference changes rapidly as a function of energy, giving rise to characteristically asymmetric lineshapes. The Fano effect is particularly important in the interpretation of electronic transport and optical spectra in semiconductors. Whereas Fano's original theory applies to the linear regime at low power, at higher power a laser field strongly admixes the states and the physics becomes rich, leading, for example, to a remarkable interplay of coherent nonlinear transitions. Despite the general importance of Fano physics, this nonlinear regime has received very little attention experimentally, presumably because the classic autoionization processes, the original test-bed of Fano's ideas, occur in an inconvenient spectral region, the deep ultraviolet. Here we report experiments that access the nonlinear Fano regime by using semiconductor quantum dots, which allow both the continuum states to be engineered and the energies to be rescaled to the near infrared. We measure the absorption cross-section of a single quantum dot and discover clear Fano resonances that we can tune with the device design or even in situ with a voltage bias. In parallel, we develop a nonlinear theory applicable to solid-state systems with fast relaxation of carriers. In the nonlinear regime, the visibility of the Fano quantum interferences increases dramatically, affording a sensitive probe of continuum coupling. This could be a unique method to detect weak couplings of a two-level quantum system (qubits), which should ideally be decoupled from all other states.

Coherent optical spectroscopy of a strongly driven quantum dot

Quantum dots are typically formed from large groupings of atoms and thus may be expected to have appreciable many-body behavior under intense optical excitation. Nonetheless, they are known to exhibit discrete energy levels due to quantum confinement effects. We show that, like single-atom or single-molecule two- and three-level quantum systems, single semiconductor quantum dots can also exhibit interference phenomena when driven simultaneously by two optical fields. Probe absorption spectra are obtained that exhibit Autler-Townes splitting when the optical fields drive coupled transitions and complex Mollow-related structure, including gain without population inversion, when they drive the same transition. Our results open the way for the demonstration of numerous quantum level-based applications, such as quantum dot lasers, optical modulators, and quantum logic devices.

Strong extinction of a far-field laser beam by a single quantum dot

Through the utilization of index-matched GaAs immersion lens techniques, we demonstrate a record extinction (12%) of a far-field focused laser beam by a single InAs/GaAs quantum dot. This contrast level enables us to report for the first time resonant laser transmission spectroscopy on a single InAs/GaAs quantum dot without the need for phase-sensitive lock-in detection.