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Zhang X, Zhang F, Yi R, Wang N, Su Z, Zhang M, Zhao B, Li Z, Qu J, M Cairney J, Lu Y, Zhao J, Gan X, Tan HH, Jagadish C, Fu L. Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays. LIGHT, SCIENCE & APPLICATIONS 2024; 13:230. [PMID: 39227364 PMCID: PMC11372134 DOI: 10.1038/s41377-024-01570-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2024] [Revised: 07/26/2024] [Accepted: 08/08/2024] [Indexed: 09/05/2024]
Abstract
Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry-Pérot cavity between the top nanowire facet and bottom nanowire/SiO2 mask interface, stimulated emissions of the EH11a/b mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of ~28.2 μJ cm-2 per pulse and a high characteristic temperature of ~128 K. By fine-tuning the In composition of the quantum wells, room temperature, single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range, spanning from 940 nm to the telecommunication O and C bands. Our research indicates that through a carefully designed facet engineering strategy, highly ordered, uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate, paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.
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Affiliation(s)
- Xutao Zhang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, 710072, Xi'an, China
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Zhicheng Su
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Bijun Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Jiangtao Qu
- Australian Centre for Microscopy and Microanalysis, the University of Sydney, Sydney, NSW 2006, Australia
| | - Julie M Cairney
- Australian Centre for Microscopy and Microanalysis, the University of Sydney, Sydney, NSW 2006, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering, The Australian National University, Canberra, ACT 2600, Australia
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
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2
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Brugnolotto E, Aleksandrov P, Sousa M, Georgiev V. Machine Learning Inspired Nanowire Classification Method based on Nanowire Array Scanning Electron Microscope Images. OPEN RESEARCH EUROPE 2024; 4:43. [PMID: 38957297 PMCID: PMC11217720 DOI: 10.12688/openreseurope.16696.2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Figures] [Subscribe] [Scholar Register] [Accepted: 06/24/2024] [Indexed: 07/04/2024]
Abstract
Background This article introduces an innovative classification methodology to identify nanowires within scanning electron microscope images. Methods Our approach employs advanced image manipulation techniques in conjunction with machine learning-based recognition algorithms. The effectiveness of our proposed method is demonstrated through its application to the categorization of scanning electron microscopy images depicting nanowires arrays. Results The method's capability to isolate and distinguish individual nanowires within an array is the primary factor in the observed accuracy. The foundational data set for model training comprises scanning electron microscopy images featuring 240 III-V nanowire arrays grown with metal organic chemical vapor deposition on silicon substrates. Each of these arrays consists of 66 nanowires. The results underscore the model's proficiency in discerning distinct wire configurations and detecting parasitic crystals. Our approach yields an average F1 score of 0.91, indicating high precision and recall. Conclusions Such a high level of performance and accuracy of ML methods demonstrate the viability of our technique not only for academic but also for practical commercial implementation and usage.
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Affiliation(s)
- Enrico Brugnolotto
- James Watt School of Engineering, University of Glasgow, Glasgow, Scotland, UK
- IBM Research Europe - Zurich, Rüschlikon, Säumerstrasse 4, 8803, Switzerland
| | - Preslav Aleksandrov
- James Watt School of Engineering, University of Glasgow, Glasgow, Scotland, UK
| | - Marilyne Sousa
- IBM Research Europe - Zurich, Rüschlikon, Säumerstrasse 4, 8803, Switzerland
| | - Vihar Georgiev
- James Watt School of Engineering, University of Glasgow, Glasgow, Scotland, UK
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3
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Sasaki M, Akamatsu T, Tomioka K, Motohisa J. Size control of InP nanowires by in situannealing and its application to the formation of InAsP quantum dots. NANOTECHNOLOGY 2024; 35:195604. [PMID: 38306695 DOI: 10.1088/1361-6528/ad2570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 02/02/2024] [Indexed: 02/04/2024]
Abstract
We carried outin situannealing of InP nanowires (NWs) in a metal-organic vapor phase epitaxial (MOVPE) growth reactor to control and reduce the tip size of InP NWs. InP NWs were grown by selective-area (SA) MOVPE on partially masked (111)A InP substrates, and annealing was successively applied in tertiarybutylphosphine (TBP) ambient. Initially, the InP NWs had a hexagonal cross-section with{112¯}facets vertical to the substrates; they became tapered, and the edges were rounded by annealing. By appropriately selecting the annealing temperature and initial NW diameter, the tip size of the NW was reduced and NWs with a tip size of 20 nm were successfully formed. Subsequently, a thin InAsP layer was grown on the annealed NWs and their photoluminescence was investigated at low temperatures. The characterization results indicated the formation of InAsP quantum dots (QDs) emitting in the telecom band. Our approach is useful for reducing the size of the NWs and for the controlled formation of InAsP QDs embedded in InP NWs in photonic devices compatible with telecom bands.
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Affiliation(s)
- Masahiro Sasaki
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
| | - Tomoya Akamatsu
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
| | - Katsuhiro Tomioka
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
| | - Junichi Motohisa
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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4
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Jeong HW, Ajay A, Döblinger M, Sturm S, Gómez Ruiz M, Zell R, Mukhundhan N, Stelzner D, Lähnemann J, Müller-Caspary K, Finley JJ, Koblmüller G. Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices. ACS APPLIED NANO MATERIALS 2024; 7:3032-3041. [PMID: 38357219 PMCID: PMC10863613 DOI: 10.1021/acsanm.3c05392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 12/21/2023] [Accepted: 12/26/2023] [Indexed: 02/16/2024]
Abstract
III-V semiconductor nanowire (NW) heterostructures with axial InGaAs active regions hold large potential for diverse on-chip device applications, including site-selectively integrated quantum light sources, NW lasers with high material gain, as well as resonant tunneling diodes and avalanche photodiodes. Despite various promising efforts toward high-quality single or multiple axial InGaAs heterostacks using noncatalytic growth mechanisms, the important roles of facet-dependent shape evolution, crystal defects, and the applicability to more universal growth schemes have remained elusive. Here, we report the growth of optically active InGaAs axial NW heterostructures via completely catalyst-free, selective-area molecular beam epitaxy directly on silicon (Si) using GaAs(Sb) NW arrays as tunable, high-uniformity growth templates and highlight fundamental relationships between structural, morphological, and optical properties of the InGaAs region. Structural, compositional, and 3D-tomographic characterizations affirm the desired directional growth along the NW axis with no radial growth observed. Clearly distinct luminescence from the InGaAs active region is demonstrated, where tunable array-geometry parameters and In content up to 20% are further investigated. Based on the underlying twin-induced growth mode, we further describe the facet-dependent shape and interface evolution of the InGaAs segment and its direct correlation with emission energy.
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Affiliation(s)
- Hyowon W. Jeong
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Akhil Ajay
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Markus Döblinger
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Sebastian Sturm
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Mikel Gómez Ruiz
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Richard Zell
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Nitin Mukhundhan
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Daniel Stelzner
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Jonas Lähnemann
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Knut Müller-Caspary
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Jonathan J. Finley
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Gregor Koblmüller
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
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5
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He C, Tang Z, Liu L, Maier SA, Wang X, Ren H, Pan A. Nonlinear Boost of Optical Angular Momentum Selectivity by Hybrid Nanolaser Circuits. NANO LETTERS 2024; 24:1784-1791. [PMID: 38265953 DOI: 10.1021/acs.nanolett.3c04830] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Selective control of light is essential for optical science and technology, with numerous applications. However, optical selectivity in the angular momentum of light has been quite limited, remaining constant by increasing the incident light power on previous passive optical devices. Here, we demonstrate a nonlinear boost of optical selectivity in both the spin and orbital angular momentum of light through near-field selective excitation of single-mode nanolasers. Our designed hybrid nanolaser circuits consist of plasmonic metasurfaces and individually placed perovskite nanowires, enabling subwavelength focusing of angular-momentum-distinctive plasmonic fields and further selective excitation of nanolasers in nanowires. The optically selected nanolaser with a nonlinear increase of light emission greatly enhances the baseline optical selectivity offered by the metasurface from about 0.4 up to near unity. Our demonstrated hybrid nanophotonic platform may find important applications in all-optical logic gates and nanowire networks, ultrafast optical switches, nanophotonic detectors, and on-chip optical and quantum information processing.
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Affiliation(s)
- Chenglin He
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Zilan Tang
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Liang Liu
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Stefan A Maier
- School of Physics and Astronomy, Faculty of Science, Monash University, Melbourne, Victoria 3800, Australia
- Department of Physics, Imperial College London, London SW7 2AZ, U.K
| | - Xiaoxia Wang
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Haoran Ren
- School of Physics and Astronomy, Faculty of Science, Monash University, Melbourne, Victoria 3800, Australia
| | - Anlian Pan
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha 410081, P. R. China
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6
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Zhang X, Yi R, Zhao B, Li C, Li L, Li Z, Zhang F, Wang N, Zhang M, Fang L, Zhao J, Chen P, Lu W, Fu L, Tan HH, Jagadish C, Gan X. Vertical Emitting Nanowire Vector Beam Lasers. ACS NANO 2023. [PMID: 37191338 DOI: 10.1021/acsnano.3c02786] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Due to the peculiar structured light field with spatially variant polarizations on the same wavefront, vector beams (VBs) have sparked research enthusiasm in developing advanced super-resolution imaging and optical communications techniques. A compact VB nanolaser is intriguing for VB applications in miniaturized photonic integrated circuits. However, determined by the diffraction limit of light, it is a challenge to realize a VB nanolaser in the subwavelength scale because the VB lasing modes should have laterally structured distributions. Here, we demonstrate a VB nanolaser made from a 300 nm thick InGaAs/GaAs nanowire (NW). To select the high-order VB lasing mode, a standing NW as-grown from the selective-area-epitaxial (SAE) growth process is utilized, which has a bottom donut-shaped interface with the silicon oxide growth substrate. With this donut-shaped interface as one of the reflective mirrors of the nanolaser cavity, the VB lasing mode has the lowest threshold. Experimentally, a single-mode VB lasing mode with a donut-shaped amplitude and azimuthally cylindrical polarization distribution is obtained. Together with the high yield and uniformity of the SAE-grown NWs, our work provides a straightforward and scalable path toward cost-effective co-integration of VB nanolasers on potential photonic integrated circuits.
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Affiliation(s)
- Xutao Zhang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Bijun Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Li Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Liang Fang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, Shanghai 201210, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
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7
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Takiguchi M, Zhang G, Sasaki S, Tateno K, John C, Ono M, Sumikura H, Shinya A, Notomi M. Damage protection from focused ion beam process toward nanocavity-implemented compound semiconductor nanowire lasers. NANOTECHNOLOGY 2023; 34:135301. [PMID: 36608329 DOI: 10.1088/1361-6528/acb0d5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Accepted: 01/06/2023] [Indexed: 06/17/2023]
Abstract
A focused ion beam (FIB) can precisely mill samples and freely form any nanostructure even on surfaces with curvature, like a nanowire surface, which are difficult to implement by using conventional fabrication techniques, e.g. electron beam lithography. Thus, this tool is promising for nanofabrication; however, fabrication damage and contamination are critical issues, which deteriorate optical properties. In this work, we investigated the protective performance of Al2O3against the FIB process (especially by a gallium ion). Nanowires were coated with Al2O3as a hard mask to protect them from damage during FIB nanofabrication. To estimate the protective performance, their emission properties by photoluminescence measurement and time-resolved spectroscopy were compared with and without Al2O3coating conditions. From the results, we confirmed that the Al2O3coating protects the nanowires. In addition, the nanowires also showed lasing behavior even after FIB processing had been carried out to implement nanostructures. This indicates that their optical properties are well maintained. Thus, our study proves the usefulness of FIBs for future nanofabrication.
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Affiliation(s)
- Masato Takiguchi
- Nanophotonics Center, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Basic Research Laboratories, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Guoqiang Zhang
- Nanophotonics Center, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Basic Research Laboratories, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Satoshi Sasaki
- NTT Basic Research Laboratories, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Kouta Tateno
- Nanophotonics Center, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Basic Research Laboratories, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Caleb John
- NTT Basic Research Laboratories, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Masaaki Ono
- Nanophotonics Center, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Basic Research Laboratories, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Hisashi Sumikura
- Nanophotonics Center, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Basic Research Laboratories, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Akihiko Shinya
- Nanophotonics Center, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Basic Research Laboratories, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Masaya Notomi
- Nanophotonics Center, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Basic Research Laboratories, NTT Corp., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- Department of Physics, Tokyo Institute of Technology, 2-12-1-H55 Ookayama, Meguro, Tokyo 152-8550, Japan
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8
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Grain N, Kim S. Insight into refractive index modulation as route to enhanced light coupling in semiconductor nanowires. OPTICS LETTERS 2023; 48:227-230. [PMID: 36638424 DOI: 10.1364/ol.478419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 11/29/2022] [Indexed: 06/17/2023]
Abstract
Recent developments in chemical processes to prepare single-crystalline nanowire (NW) superlattices (SLs) have discovered a range of unique nanophotonic properties. In particular, diameter-modulated silicon NW geometric SLs (GSLs) have shown their ability to produce complex interference effects through which enhanced light manipulation is achieved. Here, we re-imagine the origin of the complex interference effects occurring in shallow-modulated GSLs and present a refractive index modulation as a key deciding factor. We introduce the design of a NW refractive index SL (ISL), a hypothetical uniform-diameter NW in which the refractive index is periodically modulated, and explain the coupling effect between Mie resonance and bound guided state. We apply the ISL concept to other NW SL systems and suggest potential routes to bring substantial enhancements in lasing activities.
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9
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Yi R, Zhang X, Zhang F, Gu L, Zhang Q, Fang L, Zhao J, Fu L, Tan HH, Jagadish C, Gan X. Integrating a Nanowire Laser in an on-Chip Photonic Waveguide. NANO LETTERS 2022; 22:9920-9927. [PMID: 36516353 DOI: 10.1021/acs.nanolett.2c03364] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
We report a simple and facile integration strategy of a laser source in passive photonic integrated circuits (PICs) by deterministically embedding semiconductor nanowires (NWs) in waveguides. InP NWs laid on a SiN slab are buried by a polymer layer which also acts as an electron-beam resist. With electron-beam lithography, hybrid polymer-SiN waveguides are formed with precisely embedded NWs. The lasing behavior of the waveguide-embedded NWs is confirmed, and more importantly, the NW lasing mode couples into the hybrid waveguide and forms an in-plane guiding mode. Multiple waveguide-embedded NW lasers are further integrated in complex photonic structures to illustrate that the waveguiding mode supplied by the NW lasers could be manipulated for on-chip signal processing, including power splitting and wavelength-division multiplexing. This integration strategy of an on-chip laser is applicable to other PIC platforms, such as silicon and lithium niobate, and the top cladding layer could be changed by depositing SiN or SiO2, promising its CMOS compatibility.
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Affiliation(s)
- Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Xutao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, People's Republic of China
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Linpeng Gu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Qiao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Liang Fang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
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10
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Thickness Effect on the Solid-State Reaction of a Ni/GaAs System. NANOMATERIALS 2022; 12:nano12152633. [PMID: 35957063 PMCID: PMC9370099 DOI: 10.3390/nano12152633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 07/26/2022] [Accepted: 07/28/2022] [Indexed: 12/10/2022]
Abstract
Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetallic phases was investigated using in situ and ex situ XRD, pole figures, and atom probe tomography (APT). The results indicate that the 20 nm-thick Ni film exhibits an epitaxial relation with the GaAs substrate, which is (001) Ni//(001) GaAs and [111] Ni//[110] GaAs after deposition. Increasing the film’s thickness results in a change of the Ni film’s texture. This difference has an impact on the formation temperature of Ni3GaAs. This temperature decreases simultaneously with the thickness increase. This is due to the coherent/incoherent nature of the initial Ni/GaAs interface. The Ni3GaAs phase decomposes into the binary and ternary compounds xNiAs and Ni3−xGaAs1−x at about 400 °C. Similarly to Ni3GaAs, the decomposition temperature of the second phase also depends on the initial thickness of the Ni layer.
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11
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Yi R, Zhang X, Li C, Zhao B, Wang J, Li Z, Gan X, Li L, Li Z, Zhang F, Fang L, Wang N, Chen P, Lu W, Fu L, Zhao J, Tan HH, Jagadish C. Self-frequency-conversion nanowire lasers. LIGHT, SCIENCE & APPLICATIONS 2022; 11:120. [PMID: 35487898 PMCID: PMC9054850 DOI: 10.1038/s41377-022-00807-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Revised: 04/17/2022] [Accepted: 04/18/2022] [Indexed: 05/28/2023]
Abstract
Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III-V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths, as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In0.16Ga0.84As core/shell NW lasing at 1016 nm, an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation, as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths, multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers, even to the deep ultraviolet and THz range.
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Affiliation(s)
- Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Xutao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, 710072, Xi'an, China.
| | - Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Bijun Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Zhiwen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
| | - Li Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Liang Fang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, 200083, Shanghai, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, 100049, Beijing, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, 200083, Shanghai, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, 100049, Beijing, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, 201210, Shanghai, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
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12
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Tiwari P, Fischer A, Scherrer M, Caimi D, Schmid H, Moselund KE. Single-Mode Emission in InP Microdisks on Si Using Au Antenna. ACS PHOTONICS 2022; 9:1218-1225. [PMID: 35480488 PMCID: PMC9026291 DOI: 10.1021/acsphotonics.1c01677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2021] [Indexed: 06/14/2023]
Abstract
An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III-Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stability over a wider range of temperature can be challenging. Here, we explore the use of Au nanorod antennae on InP whispering gallery mode lasers on Si for single-mode emission. We show that by proper choice of the antenna size and positioning, we can suppress the side modes of a cavity and achieve single-mode emission over a wide excitation range. We establish emission trends by varying the size of the antenna and show that the far-field radiation pattern differs significantly for devices with and without antenna. Furthermore, the antenna-induced single-mode emission is dominant from room temperature (300 K) down to 200 K, whereas the cavity without an antenna is multimodal and its dominant emission wavelength is highly temperature-dependent.
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13
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Lu F, Wang H, Zeng M, Fu L. Infinite possibilities of ultrathin III-V semiconductors: Starting from synthesis. iScience 2022; 25:103835. [PMID: 35243223 PMCID: PMC8857587 DOI: 10.1016/j.isci.2022.103835] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023] Open
Abstract
Ultrathin III-V semiconductors have been receiving tremendous research interest over the past few years. Owing to their exotic structures, excellent physical and chemical properties, ultrathin III-V semiconductors are widely applied in the field of electronics, optoelectronics, and solar energy. However, the strong chemical bonds in layers are the bottleneck of the two-dimensionalization preparation process, which hinders the further development of ultrathin III-V semiconductors. Some effective methods to synthesize ultrathin III-V semiconductors have been reported recently. In this perspective, we briefly introduce the structures and properties of ultrathin III-V semiconductors firstly. Then, we comprehensively summarize the synthetic strategies of ultrathin III-V semiconductors, mainly focusing on space confinement, atomic substitution, adhesion energy regulation, and epitaxial growth. Finally, we summarize the current challenges and propose the development directions of ultrathin III-V semiconductors in the future.
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Affiliation(s)
- Fangyun Lu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Huiliu Wang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Mengqi Zeng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
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14
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Chang TY, Kim H, Hubbard WA, Azizur-Rahman KM, Ju JJ, Kim JH, Lee WJ, Huffaker D. InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12488-12494. [PMID: 35175722 DOI: 10.1021/acsami.1c21013] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building next-generation quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their power-dependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.
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Affiliation(s)
- Ting-Yuan Chang
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Hyunseok Kim
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - William A Hubbard
- NanoElectronic Imaging Inc., Los Angeles, California 90095, United States
| | | | - Jung Jin Ju
- Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea
| | - Je-Hyung Kim
- Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Wook-Jae Lee
- Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea
- Department of Data Information and Physics, Kongju National University, Gongju 32588, South Korea
| | - Diana Huffaker
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
- School of Physics and Astronomy, Cardiff University, Cardiff, Wales CF24 3AA, U.K
- Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
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15
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Kezilebieke S, Vaňo V, Huda MN, Aapro M, Ganguli SC, Liljeroth P, Lado JL. Moiré-Enabled Topological Superconductivity. NANO LETTERS 2022; 22:328-333. [PMID: 34978831 PMCID: PMC8759081 DOI: 10.1021/acs.nanolett.1c03856] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Revised: 12/22/2021] [Indexed: 06/14/2023]
Abstract
The search for artificial topological superconductivity has been limited by the stringent conditions required for its emergence. As exemplified by the recent discoveries of various correlated electronic states in twisted van der Waals materials, moiré patterns can act as a powerful knob to create artificial electronic structures. Here, we demonstrate that a moiré pattern between a van der Waals superconductor and a monolayer ferromagnet creates a periodic potential modulation that enables the realization of a topological superconducting state that would not be accessible in the absence of the moiré. The magnetic moiré pattern gives rise to Yu-Shiba-Rusinov minibands and periodic modulation of the Majorana edge modes that we detect using low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). Moiré patterns and, more broadly, periodic potential modulations are powerful tools to overcome the conventional constraints for realizing and controlling topological superconductivity.
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Affiliation(s)
- Shawulienu Kezilebieke
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
- Department
of Physics, Department of Chemistry, and Nanoscience Center, University of Jyväskylä, FI-40014 Jyväskylä, Finland
| | - Viliam Vaňo
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Md N. Huda
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Markus Aapro
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Somesh C. Ganguli
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Peter Liljeroth
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Jose L. Lado
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
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16
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Liu N, Liu G, Raj A, Sohn S, Morales-Acosta MD, Liu J, Schroers J. Unleashing nanofabrication through thermomechanical nanomolding. SCIENCE ADVANCES 2021; 7:eabi4567. [PMID: 34797709 PMCID: PMC8604398 DOI: 10.1126/sciadv.abi4567] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/12/2021] [Accepted: 10/01/2021] [Indexed: 06/13/2023]
Abstract
Advancements in nanotechnology require the development of nanofabrication methods for a wide range of materials, length scales, and elemental distributions. Today’s nanofabrication methods are typically missing at least one demanded characteristic. Hence, a general method enabling versatile nanofabrication remains elusive. Here, we show that, when revealing and using the underlying mechanisms of thermomechanical nanomolding, a highly versatile nanofabrication toolbox is the result. Specifically, we reveal interface diffusion and dislocation slip as the controlling mechanisms and use their transition to control, combine, and predict the ability to fabricate general materials, material combinations, and length scales. Designing specific elemental distributions is based on the relative diffusivities, the transition temperature, and the distribution of the materials in the feedstock. The mechanistic origins of thermomechanical nanomolding and their homologous temperature-dependent transition suggest a versatile toolbox capable of combining many materials in nanostructures and potentially producing any material in moldable shapes on the nanoscale.
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Affiliation(s)
- Naijia Liu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06511, USA
| | - Guannan Liu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06511, USA
| | - Arindam Raj
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06511, USA
| | - Sungwoo Sohn
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06511, USA
| | | | - Jingbei Liu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06511, USA
| | - Jan Schroers
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06511, USA
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17
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Wong WW, Su Z, Wang N, Jagadish C, Tan HH. Epitaxially Grown InP Micro-Ring Lasers. NANO LETTERS 2021; 21:5681-5688. [PMID: 34143635 DOI: 10.1021/acs.nanolett.1c01411] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In the near future, technological advances driven by the Fourth Industrial Revolution will boost the demand for integrated, power-efficient miniature lasers, which are important for optical data communications and advanced sensing applications. Although top-down fabricated III-V semiconductor micro-disk and micro-ring lasers have been shown to be efficient light sources, challenges such as etching-induced sidewall roughness and poor fabrication scalability have been limiting the potential for high-density on-chip integration. Here, we demonstrate InP micro-ring lasers fabricated with a highly scalable epitaxial growth technique. With an optimized cavity design, the optically pumped micro-ring lasers show efficient room-temperature lasing with a lasing threshold of around 50 μJ cm-2 per pulse. Remarkably, through comprehensive modeling of the micro-ring laser, we demonstrate lasing mode engineering experimentally by tuning the vertical ring height. Our work is a major step toward realizing the high-density monolithic integration of III-V miniature lasers on submicrometer-scale optoelectronic devices.
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Affiliation(s)
- Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Zhicheng Su
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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18
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Zhang Y, Velichko AV, Fonseka HA, Parkinson P, Gott JA, Davis G, Aagesen M, Sanchez AM, Mowbray D, Liu H. Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement. NANO LETTERS 2021; 21:5722-5729. [PMID: 34181433 PMCID: PMC8289304 DOI: 10.1021/acs.nanolett.1c01461] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Revised: 06/25/2021] [Indexed: 06/13/2023]
Abstract
Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.
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Affiliation(s)
- Yunyan Zhang
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
- Department
of Physics, Universität Paderborn, Warburger Straße 100, 33098 Paderborn, Germany
| | - Anton V. Velichko
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Patrick Parkinson
- School
Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom
| | - James A. Gott
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - George Davis
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - Martin Aagesen
- Center for
Quantum Devices, Niels Bohr Institute, University
of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - Ana M. Sanchez
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - David Mowbray
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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19
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Zhang X, Yi R, Gagrani N, Li Z, Zhang F, Gan X, Yao X, Yuan X, Wang N, Zhao J, Chen P, Lu W, Fu L, Tan HH, Jagadish C. Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers. ACS NANO 2021; 15:9126-9133. [PMID: 33970600 DOI: 10.1021/acsnano.1c02425] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by an excellent NW morphology and InGaAs/GaAs multiquantum disks. At 5 K, a threshold low as 1.6 μJ/cm2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface nonradiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ∼0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.
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Affiliation(s)
- Xutao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Nikita Gagrani
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Xiaomei Yao
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xiaoming Yuan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, Shanghai 201210, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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20
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Li Y, Zhang C, Zhuang TT, Lin Y, Tian J, Qi XY, Li X, Wang R, Wu L, Liu GQ, Ma T, He Z, Sun HB, Fan F, Zhu H, Yu SH. One-Dimensional Superlattice Heterostructure Library. J Am Chem Soc 2021; 143:7013-7020. [PMID: 33929193 DOI: 10.1021/jacs.1c01514] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Axially, epitaxially organizing nano-objects of distinct compositions and structures into superlattice nanowires enables full utilization of sunlight, readily engineered band structures, and tunable geometric parameters to fit carrier transport, thus holding great promise for optoelectronics and solar-to-fuel conversion. To maximize their efficiency, the general and high-precision synthesis of colloidal axial superlattice nanowires (ASLNWs) with programmable compositions and structures is the prerequisite; however, it remains challenging. Here, we report an axial encoding methodology toward the ASLNW library with precise control over their compositions, dimensions, crystal phases, interfaces, and periodicity. Using a predesigned, editable nanoparticle framework that offers the synthetic selectivity, we are able to chemically decouple adjacent sub-objects in ASLNWs and thus craft them in a controlled approach, yielding a library of distinct ASLNWs. We integrate therein plasmonic, metallic, or near-infrared-active chalcogenides, which hold great potential in solar energy conversion. Such synthetic capability enables a performance boost in target applications, as we report order-of-magnitude enhanced photocatalytic hydrogen production rates using optimized ASLNWs compared to corresponding solo objects. Furthermore, it is expected that such unique superlattice nanowires could bring out new phenomena.
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Affiliation(s)
- Yi Li
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chong Zhang
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Tao-Tao Zhuang
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yue Lin
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jie Tian
- Engineering and Materials Science Experiment Center, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xing-Yu Qi
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xufeng Li
- Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Rui Wang
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Liang Wu
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Guo-Qiang Liu
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Tao Ma
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhen He
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hao-Bo Sun
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Fengjia Fan
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.,Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Haiming Zhu
- Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Shu-Hong Yu
- Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials and Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
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21
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Tiwari P, Wen P, Caimi D, Mauthe S, Triviño NV, Sousa M, Moselund KE. Scaling of metal-clad InP nanodisk lasers: optical performance and thermal effects. OPTICS EXPRESS 2021; 29:3915-3927. [PMID: 33770981 DOI: 10.1364/oe.412449] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2020] [Accepted: 12/13/2020] [Indexed: 06/12/2023]
Abstract
A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate micro- and nanolasers of different shapes in InP by direct wafer bonding on Si. Metal-clad cavities have been proposed as means to scale dimensions beyond the diffraction limit of light by exploiting hybrid photonic-plasmonic modes. Here, we explore the size scalability of whispering-gallery mode light sources by cladding the sidewalls of the device with Au. We demonstrate room temperature lasing upon optical excitation for Au-clad devices with InP diameters down to 300 nm, while the purely photonic counterparts show lasing only down to 500 nm. Numerical thermal simulations support the experimental findings and confirm an improved heat-sinking capability of the Au-clad devices, suggesting a reduction in device temperature of 450 - 500 K for the metal-clad InP nanodisk laser, compared to the one without Au. This would provide substantial performance benefits even in the absence of a plasmonic mode. These results give an insight into the benefits of metal-clad designs to downscale integrated lasers on Si.
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22
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Wen L, Liu L, Liao D, Zhuo R, Pan D, Zhao J. Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy. NANOTECHNOLOGY 2020; 31:465602. [PMID: 32750681 DOI: 10.1088/1361-6528/abac32] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
InAs1-x Sb x nanowires show promise for use in nanoelectronics, infrared optoelectronics and topological quantum computation. Such applications require a high degree of growth control over the growth direction, crystal quality and morphology of the nanowires. Here, we report on the silver-assisted growth of InAs1-x Sb x nanowires by molecular-beam epitaxy for the first time. We find that the growth parameters including growth temperature, indium flux and substrate play an important role in nanowire growth. Relatively high growth temperatures and low indium fluxes can suppress the growth of non-[111]-oriented nanowires on Si (111) substrates. Vertically aligned InAs1-x Sb x nanowires with high aspect ratios can be achieved on GaAs (111)B substrates. Detailed structural studies suggest that high-quality InAs1-x Sb x nanowires can be obtained by increasing antimony content. Silver-indium alloy segregation is found in ternary alloy InAs1-x Sb x nanowires, and it plays a key role in morphological evolution of the nanowires. Our work provides useful insights into the controllable growth of high-quality III-V semiconductor nanowires.
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Affiliation(s)
- Lianjun Wen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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23
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Yuan X, Wang N, Tian Z, Zhang F, Li L, Lockrey M, He J, Jagadish C, Tan HH. Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays. NANOSCALE HORIZONS 2020; 5:1530-1537. [PMID: 32955074 DOI: 10.1039/d0nh00410c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Selective area epitaxy is a powerful growth technique that has been used to produce III-V semiconductor nanowire and nanomembrane arrays for photonic and electronic applications. The incorporation of a heterostructure such as quantum wells (QWs) brings new functionality and further broadens their applications. Using InP nanowires and nanomembranes as templates, we investigate the growth of InAsP QWs on these pure wurtzite nanostructures. InAsP QWs grow both axially and laterally on the nanowires and nanomembranes, forming a zinc blende phase axially and wurtzite phase on the sidewalls. On the non-polar {11[combining macron]00} sidewalls, the radial QW selectively grows on one sidewall which is located at the semi-polar 〈112[combining macron]〉 A side of the axial QW, causing the shape evolution of the nanowires from hexagonal to triangular cross section. For nanomembranes with {11[combining macron]00} sidewalls, the radial QW grows asymmetrically on the {11[combining macron]00} facet, destroying their symmetry. In comparison, nanomembranes with {112[combining macron]0} sidewalls are shown to be an ideal template for the growth of InAsP QWs, thanks to the uniform QW formation. These QWs emit strongly in the near IR region at room temperature and their emission can be tuned by changing their thickness or composition. These findings enrich our understanding of the QW growth, which provides new insights for heterostructure design in other III-V nanostructures.
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Affiliation(s)
- Xiaoming Yuan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China.
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24
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Chen Y, Liu J, Zeng M, Lu F, Lv T, Chang Y, Lan H, Wei B, Sun R, Gao J, Wang Z, Fu L. Universal growth of ultra-thin III-V semiconductor single crystals. Nat Commun 2020; 11:3979. [PMID: 32769968 PMCID: PMC7414113 DOI: 10.1038/s41467-020-17693-5] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2019] [Accepted: 07/09/2020] [Indexed: 11/25/2022] Open
Abstract
Ultra-thin III-V semiconductors, which exhibit intriguing characteristics, such as two-dimensional (2D) electron gas, enhanced electron-hole interaction strength, and strongly polarized light emission, have always been anticipated in future electronics. However, their inherent strong covalent bonding in three dimensions hinders the layer-by-layer exfoliation, and even worse, impedes the 2D anisotropic growth. The synthesis of desirable ultra-thin III-V semiconductors is hence still in its infancy. Here we report the growth of a majority of ultra-thin III-V single crystals, ranging from ultra-narrow to wide bandgap semiconductors, through enhancing the interfacial interaction between the III-V crystals and the growth substrates to proceed the 2D layer-by-layer growth mode. The resultant ultra-thin single crystals exhibit fascinating properties of phonon frequency variation, bandgap shift, and giant second harmonic generation. Our strategy can provide an inspiration for synthesizing unexpected ultra-thin non-layered systems and also drive exploration of III-V semiconductor-based electronics.
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Affiliation(s)
- Yunxu Chen
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Jinxin Liu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Mengqi Zeng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Fangyun Lu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Tianrui Lv
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Yuan Chang
- Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian, 116024, China
| | - Haihui Lan
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Bin Wei
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330, Braga, Portugal
| | - Rong Sun
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330, Braga, Portugal
| | - Junfeng Gao
- Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian, 116024, China
| | - Zhongchang Wang
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330, Braga, Portugal
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China.
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25
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Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes. Sci Rep 2020; 10:10720. [PMID: 32612276 PMCID: PMC7329807 DOI: 10.1038/s41598-020-67625-y] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2020] [Accepted: 06/08/2020] [Indexed: 11/08/2022] Open
Abstract
Excitonic properties in quantum dot (QD) structure are essential properties for applications in quantum computing, cryptography, and photonics. Top-down fabrication and bottom-up growth by self-assembling for forming the QDs have shown their usefulness. These methods, however, still inherent issues in precision integrating the regimes with high reproducibility and positioning to realize the applications with on-demand quantum properties on Si platforms. Here, we report on a rational synthesis of embedding atomically thin InAs in nanowire materials on Si by selective-area regrowth. An extremely slow growth rate specified for the synthesis demonstrated to form smallest quantum structures reaching nuclear size, and provided good controllability for the excitonic states on Si platforms. The system exhibited sharp photoluminescence spectra originating from exciton and bi-exciton suggesting the carriers were confined inside the nuclei. The selective-area regrowth would open new approach to integrate the exciton states with Si platforms as building-blocks for versatile quantum systems.
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26
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Fang Y, Lv K, Li Z, Kong N, Wang S, Xu A, Wu Z, Jiang F, Li C, Ozin GA, He L. Solution-Liquid-Solid Growth and Catalytic Applications of Silica Nanorod Arrays. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2000310. [PMID: 32670762 PMCID: PMC7341079 DOI: 10.1002/advs.202000310] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2020] [Revised: 05/04/2020] [Indexed: 05/16/2023]
Abstract
As an analogue to the vapor-liquid-solid process, the solution-liquid-solid (SLS) method offers a mild solution-phase route to colloidal 1D nanostructures with controlled sizes, compositions, and properties. However, direct growth of 1D nanostructure arrays through SLS processes remains in its infancy. Herein, this study shows that SLS processes are also suitable for the growth of nanorod arrays on the substrate. As a proof of concept, seedless growth of silica nanorod arrays on a variety of hydrophilic substrates such as pristine and oxide-modified glass, metal sheets, Si wafers, and biaxially oriented polypropylene film are demonstrated. Also, the silica nanorod arrays can be used as a new platform for the fabrication of catalysts for photothermal CO2 hydrogenation and the reduction of 4-nitrophenol reactions. This work offers some fundamental insight into the SLS growth process and opens a new avenue for the mild preparation of functional 1D nanostructure arrays for various applications.
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Affiliation(s)
- Yaosi Fang
- Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon‐Based Functional Materials & DevicesSoochow University199 Ren'ai RoadSuzhouJiangsu215123P. R. China
| | - Kangxiao Lv
- Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon‐Based Functional Materials & DevicesSoochow University199 Ren'ai RoadSuzhouJiangsu215123P. R. China
| | - Zhao Li
- Solar Fuels GroupChemistry DepartmentUniversity of Toronto80 St. George StTorontoOntarioM5S 3H6Canada
| | - Ning Kong
- Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon‐Based Functional Materials & DevicesSoochow University199 Ren'ai RoadSuzhouJiangsu215123P. R. China
| | - Shenghua Wang
- Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon‐Based Functional Materials & DevicesSoochow University199 Ren'ai RoadSuzhouJiangsu215123P. R. China
| | - Ao‐Bo Xu
- Department of ChemistryThe University of Western OntarioLondonOntarioN6A 3K7Canada
| | - Zhiyi Wu
- Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon‐Based Functional Materials & DevicesSoochow University199 Ren'ai RoadSuzhouJiangsu215123P. R. China
| | - Fengluan Jiang
- Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon‐Based Functional Materials & DevicesSoochow University199 Ren'ai RoadSuzhouJiangsu215123P. R. China
| | - Chaoran Li
- Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon‐Based Functional Materials & DevicesSoochow University199 Ren'ai RoadSuzhouJiangsu215123P. R. China
| | - Geoffrey A. Ozin
- Solar Fuels GroupChemistry DepartmentUniversity of Toronto80 St. George StTorontoOntarioM5S 3H6Canada
| | - Le He
- Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon‐Based Functional Materials & DevicesSoochow University199 Ren'ai RoadSuzhouJiangsu215123P. R. China
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27
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Yuan X, Liu K, Skalsky S, Parkinson P, Fang L, He J, Tan HH, Jagadish C. Carrier dynamics and recombination mechanisms in InP twinning superlattice nanowires. OPTICS EXPRESS 2020; 28:16795-16804. [PMID: 32549494 DOI: 10.1364/oe.388518] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Accepted: 05/13/2020] [Indexed: 06/11/2023]
Abstract
Nominal dopant-free zinc blende twinning superlattice InP nanowires have been grown with high crystal-quality and taper-free morphology. Here, we demonstrate its superior optical performance and clarify the different carrier recombination mechanisms at different temperatures using a time resolved photoluminescence study. The existence of regular twin planes and lateral overgrowth do not significantly increase the defect density. At room temperature, the as-grown InP nanowires have a strong emission at 1.348 eV and long minority carrier lifetime (∼3 ns). The carrier recombination dynamics is mainly dominated by nonradiative recombination due to surface trapping states; a wet chemical etch to reduce the surface trapping density thus boosts the emission intensity and increases the carrier lifetime to 7.1 ns. This nonradiative recombination mechanism dominates for temperatures above 155 K, and the carrier lifetime decreases with increasing temperature. However, radiative recombination dominates the carrier dynamics at temperature below ∼75 K, and a strong donor-bound exciton emission with a narrow emission linewidth of 4.5 meV is observed. Consequently, carrier lifetime increases with temperature. By revealing carrier recombination mechanisms over the temperature range 10-300 K, we demonstrate the attraction of using InP nanostructure for photonics and optoelectronic applications.
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28
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Kim S, Cahoon JF. Geometric Nanophotonics: Light Management in Single Nanowires through Morphology. Acc Chem Res 2019; 52:3511-3520. [PMID: 31799833 DOI: 10.1021/acs.accounts.9b00515] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
Comprehensive control of light-matter interactions at the nanoscale is increasingly important for the development of miniaturized light-based technologies that have applications ranging from information processing to sensing. Control of light in nanoscale structures-the realm of nanophotonics-requires precise control of geometry on a few-nanometer length scale. From a chemist's perspective, bottom-up growth of nanoscale materials from chemical precursors offers a unique opportunity to design structures atom-by-atom that exhibit desired properties. In this Account, we describe our efforts to create chemically and morphologically precise Si nanowires (NWs) with designed nanophotonic properties using a vapor-liquid-solid (VLS) growth process. A synthetic technique termed "Encoded Nanowire Growth and Appearance through VLS and Etching" (ENGRAVE) combines optimized VLS growth, dopant modulation, and dopant-dependent wet-chemical etching to produce NWs with precisely designed diameter modulations, yielding lithographic-like morphological control that can vary from sinusoids to fractals. The ENGRAVE NWs thus provide a versatile playground for coupling, trapping, and directing light in a nanoscale geometry. Previously, the nanophotonic functionality of NWs primarily relied on uniform-diameter structures that exhibit Mie scattering resonances and longitudinally oriented guided modes, two key photonic properties that typically cannot be utilized simultaneously due to their orthogonality. However, when the NW diameter is controllably modulated along the longitudinal axis on a scale comparable to the wavelength of light-a geometry we term a geometric superlattice (GSL)-we found that NWs can exhibit a much richer and tunable set of nanophotonic properties, as described herein. To understand these unique properties, we first summarize the basic optical properties of uniform-diameter NWs using Mie scattering theory and dispersion relations, and we describe both conventional and relatively new microscopy methods that experimentally probe the optical properties of single NWs. Next, delving into the properties of NW GSLs, we summarize their ability to couple a Mie resonance with a guided mode at a select wavevector (or wavelength) dictated by their geometric pitch. The coupling forms a bound guided state (BGS) with a standing wave profile, which allows a NW GSL to serve as a spectrally selective light coupler and to act as optical switch or sensor. We also summarize the capacity of a GSL to trap light by serving as an ultrahigh (theoretically infinite) quality factor optical cavity with an optical bound state in the continuum (BIC), in which destructive interference prevents coupling to and from the far field. Finally, we discuss a future research outlook for using ENGRAVE NWs for nanoscale light control. For instance, we highlight research avenues that could yield light-emitting devices by interfacing a NW-based BIC with emissive materials such as quantum dots, 2D materials, and hybrid perovskite. We also discuss the design of photonic band gaps, generation of high-harmonics with quasi-BIC structures, and the possibility for undiscovered nanophotonic properties and phenomena through more complex ENGRAVE geometric designs.
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Affiliation(s)
- Seokhyoung Kim
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
| | - James F. Cahoon
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
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29
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Sumikura H, Zhang G, Takiguchi M, Takemura N, Shinya A, Gotoh H, Notomi M. Mid-Infrared Lasing of Single Wurtzite InAs Nanowire. NANO LETTERS 2019; 19:8059-8065. [PMID: 31638818 DOI: 10.1021/acs.nanolett.9b03249] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Mid-infrared (MIR) photonics is a developing technology for sensing materials by their characteristic MIR absorptions. Since silicon (Si) is a low-loss material in most of the MIR region, Si photonic structures have been fabricated to guide and confine MIR light, and they allow us to achieve sensitive and integrated sensing devices. However, since the implementation of MIR light sources on Si is still challenging, we propose a thick indium arsenide (InAs) nanowire as an MIR laser that can couple to Si photonic structures with material manipulation. In this study, thick InAs nanowires are grown on an indium phosphide substrate with a self-catalyst vapor-liquid-solid method and transferred to gold-deposited SiO2/Si substrates. Low-temperature microphotoluminescence (PL) spectroscopy shows that InAs nanowires exhibit broad PL peaking at a wavelength of around 2.6 μm (3850 cm-1 in frequency), which corresponds to the bandgap energy of wurtzite InAs. At high optical pump fluences, single InAs nanowire exhibits sharp emission peaks, while their integrated intensity and polarization degree increase abruptly at the threshold pump fluence. These nonlinear behaviors indicate that the MIR lasing action takes place in the InAs nanowire in its cavity mode. Our demonstration of the MIR nanowire laser expands the wavelength coverage and potential application of semiconductor nanowires.
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Affiliation(s)
- Hisashi Sumikura
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Guoqiang Zhang
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Masato Takiguchi
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Naotomo Takemura
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Akihiko Shinya
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Hideki Gotoh
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Masaya Notomi
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
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