1
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He Z, Poudel SP, Stolz S, Wang T, Rossi A, Wang F, Mo SK, Weber-Bargioni A, Qiu ZQ, Barraza-Lopez S, Zhu T, Crommie MF. Synthesis and Polymorph Manipulation of FeSe 2 Monolayers. NANO LETTERS 2024. [PMID: 38968422 DOI: 10.1021/acs.nanolett.4c01286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2024]
Abstract
Polymorph engineering involves the manipulation of material properties through controlled structural modification and is a candidate technique for creating unique two-dimensional transition metal dichalcogenide (TMDC) nanodevices. Despite its promise, polymorph engineering of magnetic TMDC monolayers has not yet been demonstrated. Here we grow FeSe2 monolayers via molecular beam epitaxy and find that they have great promise for magnetic polymorph engineering. Using scanning tunneling microscopy (STM) and spectroscopy (STS), we find that FeSe2 monolayers predominantly display a 1T' structural polymorph at 5 K. Application of voltage pulses from an STM tip causes a local, reversible transition from the 1T' phase to the 1T phase. Density functional theory calculations suggest that this single-layer structural phase transition is accompanied by a magnetic transition from an antiferromagnetic to a ferromagnetic configuration. These results open new possibilities for creating functional magnetic devices with TMDC monolayers via polymorph engineering.
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Affiliation(s)
- Zehao He
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Material Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Shiva Prasad Poudel
- Department of Physics and MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, Arkansas 72701, United States
| | - Samuel Stolz
- Department of Physics, University of California, Berkeley, California 94720, United States
| | - Tianye Wang
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Antonio Rossi
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Feng Wang
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute at the University of California, Berkeley, and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Alexander Weber-Bargioni
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Zi Qiang Qiu
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Salvador Barraza-Lopez
- Department of Physics and MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, Arkansas 72701, United States
| | - Tiancong Zhu
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana, 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, 47907, United States
| | - Michael F Crommie
- Department of Physics, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute at the University of California, Berkeley, and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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2
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Guan Y, Chen M, Ding Y, Fang Y, Huang F, Xu CY, Zhen L, Li Y, Yang L, Xu P. Phase Transformation on Multilayer 2M-WS 2 for Improved Surface-enhanced Raman Scattering. ACS NANO 2024; 18:17339-17348. [PMID: 38905021 DOI: 10.1021/acsnano.4c06303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/23/2024]
Abstract
In recent years, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been widely recognized as an ideal platform for surface-enhanced Raman scattering (SERS). Given their rich structural phases, phase transformation in 2D TMDCs is an efficient strategy to tailor their SERS performance. In this paper, we present the great SERS performance of multilayer 2M-WS2 and then investigate the effect of its phase transformation on SERS performance. It is observed that multilayer 2M-WS2 nanosheets undergo a thermally induced single-crystal phase transition from 2M-WS2 to 2H-WS2 upon thermal annealing or laser treatment. Distinguishing from the commercially available pure 2H-WS2 (P-2H-WS2), 2H-WS2 obtained by annealing and laser treatment still retain SERS properties comparable to those of 2M-WS2, among which the detection limits for CV molecules (10-8 M) are 3 orders of magnitude lower than that of P-2H-WS2 and the Raman intensity enhancements are ∼10-37 times higher. In contrast to the charge transfer (CT) mechanism governed by the Fermi level in metallic-phase 2M-WS2, 2H-WS2 obtained by phase transition exhibits accelerated CT facilitated by the bandgap reduction and reorganization resulting from the abundance of vacancies. This study introduces an interesting perspective and potential avenue for enhancing SERS through metal-to-semiconductor phase transitions in 2D TMDCs materials.
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Affiliation(s)
- Yanchao Guan
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, China
| | - Mengxin Chen
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Ye Ding
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, China
- Suzhou Research Institute, Harbin Institute of Technology, Suzhou 215104, China
| | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Cheng-Yan Xu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Liang Zhen
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Yang Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, China
| | - Lijun Yang
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, China
- Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450000, China
| | - Ping Xu
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
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3
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Xu S, Evans-Lutterodt K, Li S, Williams NL, Hou B, Huang JJ, Boebinger MG, Lee S, Wang M, Singer A, Guo P, Qiu DY, Cha JJ. Lithiation Induced Phases in 1T'-MoTe 2 Nanoflakes. ACS NANO 2024; 18:17349-17358. [PMID: 38889099 DOI: 10.1021/acsnano.4c06330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Multiple polytypes of MoTe2 with distinct structures and intriguing electronic properties can be accessed by various physical and chemical approaches. Here, we report electrochemical lithium (Li) intercalation into 1T'-MoTe2 nanoflakes, leading to the discovery of two previously unreported lithiated phases. Distinguished by their structural differences from the pristine 1T' phase, these distinct phases were characterized using in situ polarization Raman spectroscopy and in situ single-crystal X-ray diffraction. The lithiated phases exhibit increasing resistivity with decreasing temperature, and their carrier densities are two to 4 orders of magnitude smaller than the metallic 1T' phase, as probed through in situ Hall measurements. The discovery of these gapped phases in initially metallic 1T'-MoTe2 underscores electrochemical intercalation as a potent tool for tuning the phase stability and electron density in two-dimensional (2D) materials.
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Affiliation(s)
- Shiyu Xu
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
| | - Kenneth Evans-Lutterodt
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Shunran Li
- Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Natalie L Williams
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, United States
| | - Bowen Hou
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
| | - Jason J Huang
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Matthew G Boebinger
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37830 United States
| | - Sihun Lee
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Mengjing Wang
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Andrej Singer
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Peijun Guo
- Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Diana Y Qiu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
| | - Judy J Cha
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
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4
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Xiao M, Wu Z, Liu G, Liao X, Yuan J, Zhou Y. Spatially Controlled Phase Transition in MoTe 2 Driven by Focused Ion Beam Irradiations. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31747-31755. [PMID: 38839057 DOI: 10.1021/acsami.4c03546] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Phase transitions play an important role in tuning the physical properties of two-dimensional (2D) materials as well as developing their high-performance device applications. Here, we reported the observation of a phase transition in few-layered MoTe2 flakes by the irradiation of gallium (Ga+) ions using a focused ion beam (FIB) system. The semiconducting 2H phase of MoTe2 can be controllably converted to the metallic 1T'-like phase via Te defect engineering during irradiations. By taking advantage of the nanometer-sized Ga+ ion probe proved by FIB, in-plane 1T'-2H homojunctions of MoTe2 at submicrometer scale can be fabricated. Furthermore, we demonstrate the improvement of device performance (on-state current over 2 orders of magnitude higher) in MoTe2 transistors using the patterned 1T'-like phase regions as contact electrodes. Our study provides a new strategy to drive the phase transitions in MoTe2, tune their properties, and develop high-performance devices, which also extends the applications of FIB technology in 2D materials and their devices.
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Affiliation(s)
- Meiling Xiao
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
| | - Ziyu Wu
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
| | - Guangjian Liu
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
| | - Xiaxia Liao
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
| | - Jiaren Yuan
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
| | - Yangbo Zhou
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
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5
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Katsumi Y, Gamo H, Motohisa J, Tomioka K. InP Crystal Phase Heterojunction Transistor with a Vertical Gate-All-Around Structure. ACS APPLIED MATERIALS & INTERFACES 2024; 16:30471-30477. [PMID: 38819142 PMCID: PMC11182027 DOI: 10.1021/acsami.4c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Revised: 05/09/2024] [Accepted: 05/22/2024] [Indexed: 06/01/2024]
Abstract
Crystal phase transitions can form a new type of heterojunction with different atomic arrangements in the same material: crystal phase heterojunction (CPHJ). The CPHJ has an inherently strong impact on band engineering without concerns over critical thicknesses with misfit dislocations and a semiconductor-metal transition. In-plane CPHJ was recently demonstrated in two-dimensional (2D) transition-metal dichalcogenide (TMD) materials and utilized for conventional planar field-effect transistor applications. However, scalability such as gate electrostatic control, miniaturization, and multigate structure have been limited because of the geometrical issue. Here, we demonstrated a transistor using the CPHJ with a vertical gate-all-around structure by forming a CPHJ in conventional III-V semiconductors. The CPHJ, composed of wurtzite InP nanowires with zincblende InP substrates, showed an atomically flat heterojunction without dislocations and indicated a Type-II band discontinuity across the junction. The CPHJ transistor had moderate to good gate electrostatic controllability with high on-state currents and transconductance. The CPHJ offer will provide a new switching mechanism and add a new junction and device design choice to the long history of transistors.
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Affiliation(s)
- Yu Katsumi
- Graduate
School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
- Research
Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-0813, Japan
| | - Hironori Gamo
- Graduate
School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
- Research
Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-0813, Japan
| | - Junichi Motohisa
- Graduate
School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
- Research
Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-0813, Japan
| | - Katsuhiro Tomioka
- Graduate
School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
- Research
Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-0813, Japan
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6
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Han X, Zhang Z, Wang R. A Mini Review: Phase Regulation for Molybdenum Dichalcogenide Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:984. [PMID: 38869609 PMCID: PMC11174720 DOI: 10.3390/nano14110984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2024] [Revised: 06/01/2024] [Accepted: 06/02/2024] [Indexed: 06/14/2024]
Abstract
Atomically thin two-dimensional transition metal dichalcogenides (TMDCs) have been regarded as ideal and promising nanomaterials that bring broad application prospects in extensive fields due to their ultrathin layered structure, unique electronic band structure, and multiple spatial phase configurations. TMDCs with different phase structures exhibit great diversities in physical and chemical properties. By regulating the phase structure, their properties would be modified to broaden the application fields. In this mini review, focusing on the most widely concerned molybdenum dichalcogenides (MoX2: X = S, Se, Te), we summarized their phase structures and corresponding electronic properties. Particularly, the mechanisms of phase transformation are explained, and the common methods of phase regulation or phase stabilization strategies are systematically reviewed and discussed. We hope the review could provide guidance for the phase regulation of molybdenum dichalcogenides nanomaterials, and further promote their real industrial applications.
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Affiliation(s)
| | - Zhihong Zhang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China;
| | - Rongming Wang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China;
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7
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Li Z, Varrassi L, Yang Y, Franchini C, Bellaiche L, He J. Ultrastrong Coupling between Polar Distortion and Optical Properties in Ferroelectric MoBr 2O 2. J Am Chem Soc 2024; 146:15411-15419. [PMID: 38780106 DOI: 10.1021/jacs.4c03296] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Tuning the properties of materials by using external stimuli is crucial for developing versatile smart materials. Strong coupling among the order parameters within a single-phase material constitutes a potent foundation for achieving precise property control. However, cross-coupling is fairly weak in most single materials. Leveraging first-principles calculations, we demonstrate a layered mixed anion compound MoBr2O2 that exhibits electric-field switchable spontaneous polarization and ultrastrong coupling between polar distortion and electronic structures as well as optical properties. It offers feasible avenues of achieving tunable Rashba spin-splitting, electrochromism, thermochromism, photochromism, and nonlinear optics by applying an external electric field to a single domain sample and heating, as well as intense light illumination. Additionally, it exhibits an exceptionally large photostrictive effect. These findings not only showcase the feasibility of achieving multiple order parameter coupling within a single material but also pave the way for comprehensive applications based on property control, such as energy harvesting, information processing, and ultrafast control.
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Affiliation(s)
- Zhaojun Li
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Lorenzo Varrassi
- Department of Physics and Astronomy "Augusto Righi", Alma Mater Studiorum, Università di Bologna, Bologna 40127, Italy
| | - Yali Yang
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Cesare Franchini
- Department of Physics and Astronomy "Augusto Righi", Alma Mater Studiorum, Università di Bologna, Bologna 40127, Italy
- Faculty of Physics and Center for Computational Materials Science, University of Vienna, Kolingasse 14-16, Vienna 1090, Austria
| | - Laurent Bellaiche
- Smart Ferroic Materials Center, Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States
| | - Jiangang He
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
- Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, University of Science and Technology Beijing, Beijing 100083, China
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8
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Sabbaghi S, Hosseinian E, Bazargan V. Strain-Assisted Phase Transformation in Two-Dimensional Transition-Metal Dichalcogenides. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22676-22688. [PMID: 38632875 DOI: 10.1021/acsami.4c01503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
Two-dimensional polymorphic transition-metal dichalcogenides have drawn attention for their diverse applications. This work explores the complex interplay between strain-induced phase transformation and crack growth behavior in annealed nanocrystalline MoS2. Employing molecular dynamics (MD) simulations, this research focuses on the effect of grain size, misorientation, and annealing on phase evolution and their effects on the mechanical behavior of MoS2. First, examining phase transformation in monocrystalline MoS2 under various stress states reveals distinct behaviors depending on the initial phase (1T or 2H) and crystallographic orientation with respect to loading directions. Notably, transformation from a layered hexagonal to a body-centered tetragonal structure is more noticeable when strain in a zigzag direction is applied to the 1T sample. As such, single crystalline MoS2 with a 1T phase exhibits a 16% lower fracture stress in the armchair direction compared to that with a 2H phase. On the other hand, the 1T phase shows a 5% higher phonon lifetime compared to the 2H phase with similar phonon group velocities. Next, the influence of thermal energy and mechanical stress on the phase transformation of nanocrystalline MoS2 is investigated through annealing and quenching cycles, uncovering 60 and 44% irreversibility of phase transformation for an average grain size of 3 and 11 nm, respectively. Besides, the evolution of nanocrystalline samples with different initial phases and grain sizes is studied under uniaxial and biaxial stress. This study shows an inverse pseudo-Hall-Petch effect with exponents of 0.11 and 0.09 for 2H and 1T, respectively. The study reveals that phase transformation can occur concurrently with crack initiation and propagation with the 1T phase exhibiting a 19% lower grain size sensitivity of fracture stress compared to the 2H phase.
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Affiliation(s)
- Soroush Sabbaghi
- Department of Mechanical Engineering, University of Tehran, P.O. Box 11155-4563, Tehran 14399-57131, Iran
| | - Ehsan Hosseinian
- Department of Mechanical Engineering, University of Tehran, P.O. Box 11155-4563, Tehran 14399-57131, Iran
| | - Vahid Bazargan
- Department of Mechanical Engineering, University of Tehran, P.O. Box 11155-4563, Tehran 14399-57131, Iran
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Zhang X, Dai J, Jin Z, Tao X, Zhong Y, Zheng Z, Hu X, Zhou L. Ion adsorption promotes Frank-van der Merwe growth of 2D transition metal tellurides. iScience 2024; 27:109378. [PMID: 38523797 PMCID: PMC10959663 DOI: 10.1016/j.isci.2024.109378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Revised: 01/30/2024] [Accepted: 02/27/2024] [Indexed: 03/26/2024] Open
Abstract
Reliable synthesis methods for high-quality, large-sized, and uniform two-dimensional (2D) transition-metal dichalcogenides (TMDs) are crucial for their device applications. However, versatile approaches to growing high-quality, large-sized, and uniform 2D transition-metal tellurides are rare. Here, we demonstrate an ion adsorption strategy that facilitates the Frank-van der Merwe growth of 2D transition-metal tellurides. By employing this method, we grow MoTe2 and WTe2 with enhanced lateral size, reduced thickness, and improved uniformity. Comprehensive characterizations confirm the high quality of as-grown MoTe2. Moreover, various characterizations verify the adsorption of K+ and Cl- ions on the top surface of MoTe2. X-ray photoelectron spectroscopy (XPS) analysis reveals that the MoTe2 is stoichiometric without K+ and Cl- ions and exhibits no discernable oxidation after washing. This top surface control strategy provides a new controlling knob to optimize the growth of 2D transition-metal tellurides and holds the potential for generalized to other 2D materials.
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Affiliation(s)
- Xingxing Zhang
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jiuxiang Dai
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhitong Jin
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xinwei Tao
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yunlei Zhong
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Zemin Zheng
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xianyu Hu
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Lin Zhou
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
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10
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Lee H, Im H, Choi BK, Park K, Chen Y, Ruan W, Zhong Y, Lee JE, Ryu H, Crommie MF, Shen ZX, Hwang C, Mo SK, Hwang J. Controlling structure and interfacial interaction of monolayer TaSe 2 on bilayer graphene. NANO CONVERGENCE 2024; 11:14. [PMID: 38622355 PMCID: PMC11018566 DOI: 10.1186/s40580-024-00422-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Accepted: 04/01/2024] [Indexed: 04/17/2024]
Abstract
Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1 T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1 T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties.
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Affiliation(s)
- Hyobeom Lee
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, South Korea
| | - Hayoon Im
- Department of Physics, Pusan National University, Busan, South Korea
| | - Byoung Ki Choi
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Kyoungree Park
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, South Korea
| | - Yi Chen
- Department of Physics, University of California, Berkeley, CA, USA
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Wei Ruan
- Department of Physics, University of California, Berkeley, CA, USA
- State Key Laboratory of Surface Physics, New Cornerstone Science Laboratory, and Department of Physics, Fudan University, Shanghai, China
| | - Yong Zhong
- Geballe Laboratory for Advanced Materials, Department of Physics and Applied Physics, Stanford University, Stanford, CA, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Ji-Eun Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang, South Korea
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, South Korea
| | - Michael F Crommie
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Zhi-Xun Shen
- Geballe Laboratory for Advanced Materials, Department of Physics and Applied Physics, Stanford University, Stanford, CA, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan, South Korea.
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Jinwoong Hwang
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, South Korea.
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11
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Kim H, Kim C, Jung Y, Kim N, Son J, Lee GH. In-plane anisotropic two-dimensional materials for twistronics. NANOTECHNOLOGY 2024; 35:262501. [PMID: 38387091 DOI: 10.1088/1361-6528/ad2c53] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 02/22/2024] [Indexed: 02/24/2024]
Abstract
In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.
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Affiliation(s)
- Hangyel Kim
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Changheon Kim
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, United States of America
- Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, United States of America
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, United States of America
| | - Namwon Kim
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea
- Ingram School of Engineering, Texas State University, San Marcos, TX 78666, United States of America
- Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, United States of America
| | - Jangyup Son
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54895, Republic of Korea
- Division of Nano and Information Technology, KIST School University of Science and Technology(UST), Jeonbuk 55324, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea
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12
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Hong H, Guo S, Jin L, Mao Y, Chen Y, Gu J, Chen S, Huang X, Guan Y, Li X, Li Y, Lü X, Fu Y. Two-dimensional lead halide perovskite lateral homojunctions enabled by phase pinning. Nat Commun 2024; 15:3164. [PMID: 38605026 PMCID: PMC11009245 DOI: 10.1038/s41467-024-47406-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 04/01/2024] [Indexed: 04/13/2024] Open
Abstract
Two-dimensional organic-inorganic hybrid halide perovskites possess diverse structural polymorphs with versatile physical properties, which can be controlled by order-disorder transition of the spacer cation, making them attractive for constructing semiconductor homojunctions. Here, we demonstrate a space-cation-dopant-induced phase stabilization approach to creating a lateral homojunction composed of ordered and disordered phases within a two-dimensional perovskite. By doping a small quantity of pentylammonium into (butylammonium)2PbI4 or vice versa, we effectively suppress the ordering transition of the spacer cation and the associated out-of-plane octahedral tilting in the inorganic framework, resulting in phase pining of the disordered phase when decreasing temperature or increasing pressure. This enables epitaxial growth of a two-dimensional perovskite homojunction with tunable optical properties under temperature and pressure stimuli, as well as directional exciton diffusion across the interface. Our results demonstrate a previously unexplored strategy for constructing two-dimensional perovskite heterostructures by thermodynamic tuning and spacer cation doping.
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Affiliation(s)
- Huilong Hong
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Songhao Guo
- Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
| | - Leyang Jin
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Yuhong Mao
- Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
| | - Yuguang Chen
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Jiazhen Gu
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Shaochuang Chen
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Xu Huang
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Yan Guan
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Xiaotong Li
- Department of Chemistry & Organic and Carbon Electronics Laboratories, North Carolina State University, Raleigh, NC, 27695, USA
| | - Yan Li
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Xujie Lü
- Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
| | - Yongping Fu
- Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.
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13
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Canton-Vitoria R, Kitaura R. Insulating 6,6-Phenyl-C61-butyric Acid Methyl Ester on Transition-Metal Dichalcogenides: Impact of the Hybrid Materials on the Optical and Electrical Properties. Chemistry 2024; 30:e202400150. [PMID: 38302733 DOI: 10.1002/chem.202400150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2024] [Revised: 01/30/2024] [Accepted: 01/31/2024] [Indexed: 02/03/2024]
Abstract
In this study we develop a strategy to insulate 6,6 -Phenyl C61 butyric acid methyl ester (PCBM) on the basal plane of transition metal dichalcogenides (TMDs). Concretely single layers of MoS2, MoSe2, MoTe2, WS2, WSe2 and WTe2 and ultrathin MoO2 and WO2 were grown via chemical vapor deposition (CVD). Then, the thiol group of a PCBM modified with cysteine reacts with the chalcogen vacancies on the basal plane of TMDs, yielding PCBM-MoS2, PCBM-MoSe2, PCBM-WS2, PCBM-WSe2, PCBM-WTe2, PCBM-MoO2 and PCBM-WO2. Afterwards, all the hybrid materials were characterized using several techniques, including XPS, Raman spectroscopy, TEM, AFM, and cyclic voltammetry. Furthermore, PCBM causes a unique optical and electrical impact in every TMDs. For MoS2 devices, the conductivity and photoluminescence (PL) emission achieve a remarkable enhancement of 1700 % and 200 % in PCBM-MoS2 hybrids. Similarly, PCBM-MoTe2 hybrids exhibit a 2-fold enhancement in PL emission at 1.1 eV. On the other hand, PCBM-MoSe2, PCBM-WSe2 and PCBM-WS2 hybrids exhibited a new interlayer exciton at 1.29-1.44, 1.7 and 1.37-154 eV along with an enhancement of the photo-response by 2400, 3200 and 600 %, respectively. Additionally, PCBM-WTe2 and PCBM-WO2 showed a modest photo-response, in sharp contrast with pristine WTe2 or WO2 which archive pure metallic character.
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Affiliation(s)
- Ruben Canton-Vitoria
- Department of Chemistry, Nagoya University, Nagoya, Aichi, 464-8602, Japan
- Theoretical and Physical Chemistry Institute Department of Chemistry, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, 11635, Athens, Greec
| | - Ryo Kitaura
- Department of Chemistry, Nagoya University, Nagoya, Aichi, 464-8602, Japan
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
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14
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Kiyohara S, Hinuma Y, Oba F. Band Alignment of Oxides by Learnable Structural-Descriptor-Aided Neural Network and Transfer Learning. J Am Chem Soc 2024; 146:9697-9708. [PMID: 38546127 PMCID: PMC11009958 DOI: 10.1021/jacs.3c13574] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Revised: 02/25/2024] [Accepted: 02/27/2024] [Indexed: 04/11/2024]
Abstract
The band alignment of semiconductors, insulators, and dielectrics is relevant to diverse material properties and device structures utilizing their surfaces and interfaces. In particular, the ionization potential and electron affinity are fundamental quantities that describe surface-dependent band-edge positions with respect to the vacuum level. Their accurate and systematic determination, however, demands elaborate experiments or simulations for well-characterized surfaces. Here, we report machine learning for the band alignment of nonmetallic oxides using a high-throughput first-principles calculation data set containing about 3000 oxide surfaces. Our neural network accurately predicts the band positions for relaxed surfaces of binary oxides simply by using the information on bulk structures and surface termination planes. Moreover, we extend the model to naturally include multiple-cation effects and transfer it to ternary oxides. The present approach enables the band alignment of a vast number of solid surfaces, thereby opening the way to a systematic understanding and materials screening.
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Affiliation(s)
- Shin Kiyohara
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, R3-7, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
- Institute
for Materials Research, Tohoku University, 2-2-1 Katahira,
Aoba-ku, Sendai 980-8577, Japan
| | - Yoyo Hinuma
- Department
of Energy and Environment, National Institute
of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
| | - Fumiyasu Oba
- Laboratory
for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, R3-7, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
- MDX
Research Center for Element Strategy, International Research Frontiers
Initiative, Tokyo Institute of Technology, SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
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15
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Zhai W, Li Z, Wang Y, Zhai L, Yao Y, Li S, Wang L, Yang H, Chi B, Liang J, Shi Z, Ge Y, Lai Z, Yun Q, Zhang A, Wu Z, He Q, Chen B, Huang Z, Zhang H. Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides. Chem Rev 2024; 124:4479-4539. [PMID: 38552165 DOI: 10.1021/acs.chemrev.3c00931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.
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Affiliation(s)
- Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Lixin Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yiyao Ge
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhiying Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Bo Chen
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhiqi Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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16
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Qi J, Dai Y, Ma C, Ke C, Wang W, Wu Z, Wang X, Bao K, Xu Y, Huang H, Wang L, Wu J, Luo G, Chen Y, Lin Z, He Q. Surfactant-Free Ultrasonication-Assisted Synthesis of 2d Tellurium Based on Metastable 1T'-MoTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306962. [PMID: 37652747 DOI: 10.1002/adma.202306962] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/21/2023] [Indexed: 09/02/2023]
Abstract
Elemental 2D materials (E2DMs) have been attracting considerable attention owing to their chemical simplicity and excellent/exotic properties. However, the lack of robust chemical synthetic methods seriously limits their potential. Here, a surfactant-free liquid-phase synthesis of high-quality 2D tellurium is reported based on ultrasonication-assisted exfoliation of metastable 1T'-MoTe2. The as-grown 2D tellurium nanosheets exhibit excellent single crystallinity, ideal 2D morphology, surfactant-free surface, and negligible 1D by-products. Furthermore, a unique growth mechanism based on the atomic escape of Te atoms from metastable transition metal dichalcogenides and guided 2D growth in the liquid phase is proposed and verified. 2D tellurium-based field-effect transistors show ultrahigh hole mobility exceeding 1000 cm2 V-1 s-1 at room temperature attributing to the high crystallinity and surfactant-free surface, and exceptional chemical and operational stability using both solid-state dielectric and liquid-state electrical double layer. The facile ultrasonication-assisted synthesis of high-quality 2D tellurium paves the way for further exploration of E2DMs and expands the scope of liquid-phase exfoliation (LPE) methodology toward the controlled wet-chemical synthesis of functional nanomaterials.
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Affiliation(s)
- Junlei Qi
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China
| | - Chen Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, 999077, China
| | - Chengxuan Ke
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Wenbin Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Zongxiao Wu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Xiang Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Kai Bao
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yue Xu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Lingzhi Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Jingkun Wu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Guangfu Luo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, 999077, China
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
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17
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Wang Y, Zhai W, Ren Y, Zhang Q, Yao Y, Li S, Yang Q, Zhou X, Li Z, Chi B, Liang J, He Z, Gu L, Zhang H. Phase-Controlled Growth of 1T'-MoS 2 Nanoribbons on 1H-MoS 2 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307269. [PMID: 37934742 DOI: 10.1002/adma.202307269] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 10/31/2023] [Indexed: 11/09/2023]
Abstract
2D heterostructures are emerging as alternatives to conventional semiconductors, such as silicon, germanium, and gallium nitride, for next-generation electronics and optoelectronics. However, the direct growth of 2D heterostructures, especially for those with metastable phases still remains challenging. To obtain 2D transition metal dichalcogenides (TMDs) with designed phases, it is highly desired to develop phase-controlled synthetic strategies. Here, a facile chemical vapor deposition method is reported to prepare vertical 1H/1T' MoS2 heterophase structures. By simply changing the growth atmosphere, semimetallic 1T'-MoS2 can be in situ grown on the top of semiconducting 1H-MoS2, forming vertical semiconductor/semimetal 1H/1T' heterophase structures with a sharp interface. The integrated device based on the 1H/1T' MoS2 heterophase structure displays a typical rectifying behavior with a current rectifying ratio of ≈103. Moreover, the 1H/1T' MoS2-based photodetector achieves a responsivity of 1.07 A W-1 at 532 nm with an ultralow dark current of less than 10-11 A. The aforementioned results indicate that 1H/1T' MoS2 heterophase structures can be a promising candidate for future rectifiers and photodetectors. Importantly, the approach may pave the way toward tailoring the phases of TMDs, which can help us utilize phase engineering strategies to promote the performance of electronic devices.
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Affiliation(s)
- Yongji Wang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Yi Ren
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Qi Yang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Xichen Zhou
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Zhen He
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
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18
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Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
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19
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Wang J, Cheng F, Sun Y, Xu H, Cao L. Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures. Phys Chem Chem Phys 2024; 26:7988-8012. [PMID: 38380525 DOI: 10.1039/d3cp04656g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
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Affiliation(s)
- Jiamin Wang
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fang Cheng
- State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Yan Sun
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.
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20
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Li J, Duan X. Two-dimensional ballistic transistors for advanced-node integrated circuits. Natl Sci Rev 2024; 11:nwad315. [PMID: 38312382 PMCID: PMC10833443 DOI: 10.1093/nsr/nwad315] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Revised: 12/09/2023] [Accepted: 12/10/2023] [Indexed: 02/06/2024] Open
Affiliation(s)
- Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, China
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21
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Wang X, Hu Y, Kim SY, Cho K, Wallace RM. Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38422472 DOI: 10.1021/acsami.3c18332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
The high contact resistance of transition metal dichalcogenide (TMD)-based devices is receiving considerable attention due to its limitation on electronic performance. The mechanism of Fermi level (EF) pinning, which causes the high contact resistance, is not thoroughly understood to date. In this study, the metal (Ni and Ag)/Mo-TMD surfaces and interfaces are characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning tunneling microscopy and spectroscopy, and density functional theory systematically. Ni and Ag form covalent and van der Waals (vdW) interfaces on Mo-TMDs, respectively. Imperfections are detected on Mo-TMDs, which lead to electronic and spatial variations. Gap states appear after the adsorption of single and two metal atoms on Mo-TMDs. The combination of the interface reaction type (covalent or vdW), the imperfection variability of the TMD materials, and the gap states induced by contact metals with different weights are concluded to be the origins of EF pinning.
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Affiliation(s)
- Xinglu Wang
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Yaoqiao Hu
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Seong Yeoul Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Kyeongjae Cho
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
| | - Robert M Wallace
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States of America
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22
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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23
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Liu M, Gou J, Liu Z, Chen Z, Ye Y, Xu J, Xu X, Zhong D, Eda G, Wee ATS. Phase-selective in-plane heteroepitaxial growth of H-phase CrSe 2. Nat Commun 2024; 15:1765. [PMID: 38409207 PMCID: PMC10897461 DOI: 10.1038/s41467-024-46087-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Accepted: 02/14/2024] [Indexed: 02/28/2024] Open
Abstract
Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe2. The lattice-matched MoSe2 nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe2 with the formation of MoSe2-CrSe2 heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe2 monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe2 exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.
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Affiliation(s)
- Meizhuang Liu
- School of Physics, Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China.
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore.
| | - Jian Gou
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore
- School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - Zizhao Liu
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zuxin Chen
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
| | - Yuliang Ye
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
| | - Jing Xu
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China
| | - Xiaozhi Xu
- School of Physics, Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China
| | - Dingyong Zhong
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China
| | - Goki Eda
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore.
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24
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Wong H, Zhang J, Liu J. Contacts at the Nanoscale and for Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:386. [PMID: 38392759 PMCID: PMC10893407 DOI: 10.3390/nano14040386] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Revised: 02/06/2024] [Accepted: 02/16/2024] [Indexed: 02/24/2024]
Abstract
Contact scaling is a major challenge in nano complementary metal-oxide-semiconductor (CMOS) technology, as the surface roughness, contact size, film thicknesses, and undoped substrate become more problematic as the technology shrinks to the nanometer range. These factors increase the contact resistance and the nonlinearity of the current-voltage characteristics, which could limit the benefits of the further downsizing of CMOS devices. This review discusses issues related to the contact size reduction of nano CMOS technology and the validity of the Schottky junction model at the nanoscale. The difficulties, such as the limited doping level and choices of metal for band alignment, Fermi-level pinning, and van der Waals gap, in achieving transparent ohmic contacts with emerging two-dimensional materials are also examined. Finally, various methods for improving ohmic contacts' characteristics, such as two-dimensional/metal van der Waals contacts and hybrid contacts, junction doping technology, phase and bandgap modification effects, buffer layers, are highlighted.
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Affiliation(s)
- Hei Wong
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, China
| | - Jieqiong Zhang
- Hubei Jiu Feng Shan Laboratory, Wuhan 430074, China; (J.Z.); (J.L.)
| | - Jun Liu
- Hubei Jiu Feng Shan Laboratory, Wuhan 430074, China; (J.Z.); (J.L.)
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25
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Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
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Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
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26
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Zhao X, Sun K, Lv Z, Liao Z, Liu S, Zhou S. Contact Engineering of III-Nitrides and Metal Schemes toward Efficient Deep-Ultraviolet Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6605-6613. [PMID: 38266191 DOI: 10.1021/acsami.3c15303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Throughout the development of III-nitride electronic and optoelectronic devices, electrically interfacing III-nitride semiconductors and metal schemes has been a long-standing issue that determines the contact resistance and operation voltage, which are tightly associated with the device performance and stability. Compared to the main research focus of the crystal quality of III-nitride semiconductors, the equally important contact interface between III-nitrides and metal schemes has received relatively less attention. Here, we demonstrate a comprehensive contact engineering strategy to realize low resistance to Al-rich n-AlGaN via pretreatment and metal scheme optimization. Prior to the metal deposition, the introduction of CHF3 treatment is conducive to the substantial resistance reduction, with the effect becoming more distinct by prolonging the treatment time. Furthermore, we compare different metal schemes, namely, Ti/Al/Ti/Au, Ti/Al/Ti/Pt/Au, and Cr/Ti/Al/Ti/Pt/Au, to form electrical contact on n-AlGaN. From microscale analysis based on multiple characterization methods, we reveal the correlation between electrical properties and the nature of the contact interface, attributing the contact improvement to the low-resistance Pt- and Cr-related alloy formation. Under the circumstance that no efforts have been devoted to optimizing the epitaxial growth, engineering the metal-semiconductor contact properties alone leads to a resistance value of 8.96 × 10-5 Ω·cm2. As a result, the fabricated deep-ultraviolet LEDs exhibit an ultralow forward voltage of 5.47 V at 30 A/cm2 and a 33% increase in the peak wall-plug efficiency.
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Affiliation(s)
- Xiaoyu Zhao
- Center for Photonics and Semiconductors, Institute of Semiconductor Devices and Advanced Displays, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Ke Sun
- Center for Photonics and Semiconductors, Institute of Semiconductor Devices and Advanced Displays, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Zhenxing Lv
- Center for Photonics and Semiconductors, Institute of Semiconductor Devices and Advanced Displays, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Zhefu Liao
- Center for Photonics and Semiconductors, Institute of Semiconductor Devices and Advanced Displays, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Sheng Liu
- Center for Photonics and Semiconductors, Institute of Semiconductor Devices and Advanced Displays, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Shengjun Zhou
- Center for Photonics and Semiconductors, Institute of Semiconductor Devices and Advanced Displays, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
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27
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Wong LW, Yang K, Han W, Zheng X, Wong HY, Tsang CS, Lee CS, Lau SP, Ly TH, Yang M, Zhao J. Deciphering the ultra-high plasticity in metal monochalcogenides. NATURE MATERIALS 2024; 23:196-204. [PMID: 38191634 DOI: 10.1038/s41563-023-01788-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Accepted: 12/11/2023] [Indexed: 01/10/2024]
Abstract
The quest for electronic devices that offer flexibility, wearability, durability and high performance has spotlighted two-dimensional (2D) van der Waals materials as potential next-generation semiconductors. Especially noteworthy is indium selenide, which has demonstrated surprising ultra-high plasticity. To deepen our understanding of this unusual plasticity in 2D van der Waals materials and to explore inorganic plastic semiconductors, we have conducted in-depth experimental and theoretical investigations on metal monochalcogenides (MX) and transition metal dichalcogenides (MX2). We have discovered a general plastic deformation mode in MX, which is facilitated by the synergetic effect of phase transitions, interlayer gliding and micro-cracks. This is in contrast to crystals with strong atomic bonding, such as metals and ceramics, where plasticity is primarily driven by dislocations, twinning or grain boundaries. The enhancement of gliding barriers prevents macroscopic fractures through a pinning effect after changes in stacking order. The discovery of ultra-high plasticity and the phase transition mechanism in 2D MX materials holds significant potential for the design and development of high-performance inorganic plastic semiconductors.
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Affiliation(s)
- Lok Wing Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ke Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Wei Han
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Hok Yin Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China.
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, China.
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, China.
| | - Ming Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
- The Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
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Jeon Y, Kim S, Seo J, Yoo H. Contributions of Light to Novel Logic Concepts Using Optoelectronic Materials. SMALL METHODS 2024; 8:e2300391. [PMID: 37231569 DOI: 10.1002/smtd.202300391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 04/29/2023] [Indexed: 05/27/2023]
Abstract
Instead of the current method of transmitting voltage or current signals in electronic circuit operation, light offers an alternative to conventional logic, allowing for the implementation of new logic concepts through interaction with light. This manuscript examines the use of light in implementing new logic concepts as an alternative to traditional logic circuits and as a future technology. This article provides an overview of how to implement logic operations using light rather than voltage or current signals using optoelectronic materials such as 2D materials, metal-oxides, carbon structures, polymers, small molecules, and perovskites. This review covers the various technologies and applications of using light to dope devices, implement logic gates, control logic circuits, and generate light as an output signal. Recent research on logic and the use of light to implement new functions is summarized. This review also highlights the potential of optoelectronic logic for future technological advancements.
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Affiliation(s)
- Yunchae Jeon
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Somi Kim
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Juhyung Seo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
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29
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Tan R, Liu Y, Tu Y, Loeffler FF. Flash phase engineering of MoS 2 nanofilms for enhanced photoelectrochemical performance. RSC Adv 2024; 14:4730-4733. [PMID: 38318628 PMCID: PMC10839749 DOI: 10.1039/d3ra07759d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Accepted: 01/31/2024] [Indexed: 02/07/2024] Open
Abstract
A heterophase structure combining semiconducting 2H- and metallic 1T-MoS2 exhibits significantly enhanced photoelectrochemical performance due to the electrical coupling and synergistic effect between the phases. Therefore, site-selective effective phase engineering is crucial for the fabrication of MoS2-based photoelectrochemical devices. Here, we employed a flash phase engineering (FPE) strategy to precisely fabricate a 2H-1T heterophase structure. This technique allows simple, efficient, and precise control over the micropatterning of MoS2 nanofilms while enabling site-selective phase transition from the 1T to the 2H phase. The detection of reduced glutathione (GSH) showed an approximately 5-fold increase in sensitivity when using the electrode fabricated by FPE.
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Affiliation(s)
- Rong Tan
- Department of Biomolecular Systems, Max Planck Institute of Colloids and Interface 14476 Potsdam Germany
- College of Chemistry, Chemical Engineering and Material Science, Soochow University 215123 Suzhou China
| | - Yuxin Liu
- Department of Biomolecular Systems, Max Planck Institute of Colloids and Interface 14476 Potsdam Germany
- Department of Chemistry and Biochemistry, Freie Universität Berlin 14195 Berlin Germany
| | - Yifeng Tu
- College of Chemistry, Chemical Engineering and Material Science, Soochow University 215123 Suzhou China
| | - Felix F Loeffler
- Department of Biomolecular Systems, Max Planck Institute of Colloids and Interface 14476 Potsdam Germany
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30
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Liu H, Wu Y, Wu Z, Liu S, Zhang VL, Yu T. Coexisting Phases in Transition Metal Dichalcogenides: Overview, Synthesis, Applications, and Prospects. ACS NANO 2024; 18:2708-2729. [PMID: 38252696 DOI: 10.1021/acsnano.3c10665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Over the past decade, significant advancements have been made in phase engineering of two-dimensional transition metal dichalcogenides (TMDCs), thereby allowing controlled synthesis of various phases of TMDCs and facile conversion between them. Recently, there has been emerging interest in TMDC coexisting phases, which contain multiple phases within one nanostructured TMDC. By taking advantage of the merits from the component phases, the coexisting phases offer enhanced performance in many aspects compared with single-phase TMDCs. Herein, this review article thoroughly expounds the latest progress and ongoing efforts on the syntheses, properties, and applications of TMDC coexisting phases. The introduction section overviews the main phases of TMDCs (2H, 3R, 1T, 1T', 1Td), along with the advantages of phase coexistence. The subsequent section focuses on the synthesis methods for coexisting phases of TMDCs, with particular attention to local patterning and random formations. Furthermore, on the basis of the versatile properties of TMDC coexisting phases, their applications in magnetism, valleytronics, field-effect transistors, memristors, and catalysis are discussed. Lastly, a perspective is presented on the future development, challenges, and potential opportunities of TMDC coexisting phases. This review aims to provide insights into the phase engineering of 2D materials for both scientific and engineering communities and contribute to further advancements in this emerging field.
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Affiliation(s)
- Haiyang Liu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Yaping Wu
- School of Physics and Technology, Xiamen University, Xiamen 361005, China
| | - Zhiming Wu
- School of Physics and Technology, Xiamen University, Xiamen 361005, China
| | - Sheng Liu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Vanessa Li Zhang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Ting Yu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
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31
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Dai B, Su Y, Guo Y, Wu C, Xie Y. Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets. Chem Rev 2024; 124:420-454. [PMID: 38146851 DOI: 10.1021/acs.chemrev.3c00422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.
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Affiliation(s)
- Baohu Dai
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yueqi Su
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yuqiao Guo
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Changzheng Wu
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yi Xie
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
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32
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Zhou H, Zhang C, Gao A, Shi E, Guo Y. Patterned growth of two-dimensional atomic layer semiconductors. Chem Commun (Camb) 2024; 60:943-955. [PMID: 38168791 DOI: 10.1039/d3cc04866g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Transition metal dichalcogenides (TMDCs), which are representative of two-dimensional (2D) semiconductors, have attracted tremendous attention over the last two decades. TMDCs are regarded as potential candidates in modern nano- and optoelectronic applications due to their unique crystal structures and outstanding electronic and optoelectronic properties. For practical use, 2D semiconductors need to be fabricated with diverse morphologies for integration into electronic devices and to perform different functionalities. Controlled patterning synthesis with programmable geometries is therefore highly desired. We review state-of-the-art strategies for the patterned growth of atomic layer TMDCs and their heterostructures, including additive manufacturing and subtractive manufacturing for patterning single TMDC materials and the introduction of other low-dimensional nanomaterials as growth templates or hetero-atoms for element conversion in patterning TMDC heterostructures. The optoelectronic and electronic applications of the as-grown monolayer TMDC patterns are introduced. Future challenges and the prospects for the patterned growth of 2D semiconductors are discussed based on present achievements.
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Affiliation(s)
- Hao Zhou
- Key Laboratory of Polar Materials and Devices(MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
| | - Chiyu Zhang
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
| | - Anran Gao
- Key Laboratory of Polar Materials and Devices(MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Enzheng Shi
- School of Engineering, Westlake University, Hangzhou, 310030, China.
| | - Yunfan Guo
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
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Köster J, Kretschmer S, Storm A, Rasper F, Kinyanjui MK, Krasheninnikov AV, Kaiser U. Phase transformations in single-layer MoTe 2stimulated by electron irradiation and annealing. NANOTECHNOLOGY 2024; 35:145301. [PMID: 38096582 DOI: 10.1088/1361-6528/ad15bb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2023] [Accepted: 12/14/2023] [Indexed: 01/16/2024]
Abstract
Among two-dimensional (2D) transition metal dichalcogenides (TMDs), MoTe2is predestined for phase-engineering applications due to the small difference in free energy between the semiconducting H-phase and metallic 1T'-phase. At the same time, the complete picture of the phase evolution originating from point defects in single-layer of semiconducting H-MoTe2via Mo6Te6nanowires to cubic molybdenum has not yet been reported so far, and it is the topic of the present study. The occurring phase transformations in single-layer H-MoTe2were initiated by 40-80 kV electrons in the spherical and chromatic aberration-corrected high-resolution transmission electron microscope and/or when subjected to high temperatures. We analyse the damage cross-section at voltages between 40 kV and 80 kV and relate the results to previously published values for other TMDs. Then we demonstrate that electron beam irradiation offers a route to locally transform freestanding single-layer H-MoTe2into one-dimensional (1D) Mo6Te6nanowires. Combining the experimental data with the results of first-principles calculations, we explain the transformations in MoTe2single-layers and Mo6Te6nanowires by an interplay of electron-beam-induced energy transfer, atom ejection, and oxygen absorption. Further, the effects emerging from electron irradiation are compared with those produced byin situannealing in a vacuum until pure molybdenum crystals are obtained at temperatures of about 1000 °C. A detailed understanding of high-temperature solid-to-solid phase transformation in the 2D limit can provide insights into the applicability of this material for future device fabrication.
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Affiliation(s)
- Janis Köster
- Electron Microscopy Group of Materials Science, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany
| | - Silvan Kretschmer
- Institut of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01328 Dresden, Germany
| | - Alexander Storm
- Electron Microscopy Group of Materials Science, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany
| | - Fabian Rasper
- Electron Microscopy Group of Materials Science, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany
| | - Michael K Kinyanjui
- Electron Microscopy Group of Materials Science, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany
| | - Arkady V Krasheninnikov
- Institut of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01328 Dresden, Germany
- Department of Applied Physics, Aalto University, PO Box 14100, FI-00076 Aalto, Finland
| | - Ute Kaiser
- Electron Microscopy Group of Materials Science, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany
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Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
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Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
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35
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Han Y, Wang L, Cao K, Zhou J, Zhu Y, Hou Y, Lu Y. In Situ TEM Characterization and Modulation for Phase Engineering of Nanomaterials. Chem Rev 2023; 123:14119-14184. [PMID: 38055201 DOI: 10.1021/acs.chemrev.3c00510] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Solid-state phase transformation is an intriguing phenomenon in crystalline or noncrystalline solids due to the distinct physical and chemical properties that can be obtained and modified by phase engineering. Compared to bulk solids, nanomaterials exhibit enhanced capability for phase engineering due to their small sizes and high surface-to-volume ratios, facilitating various emerging applications. To establish a comprehensive atomistic understanding of phase engineering, in situ transmission electron microscopy (TEM) techniques have emerged as powerful tools, providing unprecedented atomic-resolution imaging, multiple characterization and stimulation mechanisms, and real-time integrations with various external fields. In this Review, we present a comprehensive overview of recent advances in in situ TEM studies to characterize and modulate nanomaterials for phase transformations under different stimuli, including mechanical, thermal, electrical, environmental, optical, and magnetic factors. We briefly introduce crystalline structures and polymorphism and then summarize phase stability and phase transformation models. The advanced experimental setups of in situ techniques are outlined and the advantages of in situ TEM phase engineering are highlighted, as demonstrated via several representative examples. Besides, the distinctive properties that can be obtained from in situ phase engineering are presented. Finally, current challenges and future research opportunities, along with their potential applications, are suggested.
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Affiliation(s)
- Ying Han
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
| | - Liqiang Wang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
| | - Ke Cao
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi 710026, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
| | - Yingxin Zhu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
| | - Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong SAR 999077, China
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36
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Yin Z, Panaccione W, Hu A, Douglas ORT, Tanjil MRE, Jeong Y, Zhao H, Wang MC. Directionally-Resolved Phononic Properties of Monolayer 2D Molybdenum Ditelluride (MoTe 2) under Uniaxial Elastic Strain. NANO LETTERS 2023; 23:11763-11770. [PMID: 38100381 DOI: 10.1021/acs.nanolett.3c03706] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Understanding the phonon characteristics of two-dimensional (2D) molybdenum ditelluride (MoTe2) under strain is critical to manipulating its multiphysical properties. Although there have been numerous computational efforts to elucidate the strain-coupled phonon properties of monolayer MoTe2, empirical validation is still lacking. In this work, monolayer 1H-MoTe2 under uniaxial strain is studied via in situ micro-Raman spectroscopy. Directionally dependent monotonic softening of the doubly degenerate in-plane E2g1 phonon mode is observed with increasing uniaxial strain, where the E2g1 peak red-shifts -1.66 ± 0.04 cm-1/% along the armchair direction and -0.80 ± 0.07 cm-1/% along the zigzag direction. The corresponding Grüneisen parameters are calculated to be 1.09 and 0.52 along the armchair and zigzag directions, respectively. This work provides the first empirical quantification and validation of the orientation-dependent strain-coupled phonon response in monolayer 1H-MoTe2 and serves as a benchmark for other prototypical 2D transition-metal tellurides.
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Affiliation(s)
- Zhewen Yin
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Wyatt Panaccione
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Anjun Hu
- Department of Medical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Ossie R T Douglas
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Md Rubayat-E Tanjil
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Yunjo Jeong
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Huijuan Zhao
- Department of Mechanical Engineering, Clemson University, Clemson, South Carolina 29634-0921, United States
| | - Michael Cai Wang
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
- Department of Medical Engineering, University of South Florida, Tampa, Florida 33620, United States
- Department of Chemical, Biological, and Materials Engineering, University of South Florida, Tampa, Florida 33620, United States
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37
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Lee HJ, Choe M, Yang W, Lee SW, Park YJ, Hwang H, Chhowalla M, Lee Z, Shin HS. Phase-Engineered WS 2 Monolayer Quantum Dots by Rhenium Doping. ACS NANO 2023; 17:25731-25738. [PMID: 38060370 DOI: 10.1021/acsnano.3c11086] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Transition metal dichalcogenides (TMDs) occur in the thermodynamically stable trigonal prismatic (2H) phase or the metastable octahedral (1T) phase. Phase engineering of TMDs has proven to be a powerful tool for applications in energy storage devices as well as in electrocatalysis. However, the mechanism of the phase transition in TMDs and the synthesis of phase-controlled TMDs remain challenging. Here we report the synthesis of Re-doped WS2 monolayer quantum dots (MQDs) using a simple colloidal chemical process. We find that the incorporation of a small amount of electron-rich Re atoms in WS2 changes the metal-metal distance in the 2H phase initially, which introduces strain in the structure (strained 2H (S2H) phase). Increasing the concentration of Re atoms sequentially transforms the S2H phase into the 1T and 1T' phases to release the strain. In addition, we performed controlled experiments by doping MoS2 with Re to distinguish between Re and Mo atoms in scanning transmission electron microscopy images and quantified the concentration range of Re atoms in each phase of MoS2, indicating that phase engineering of WS2 or MoS2 is possible by doping with different amounts of Re atoms. We demonstrate that the 1T' WS2 MQDs with 49 at. % Re show superior catalytic performance (a low Tafel slope of 44 mV/dec, a low overpotential of 158 mV at a current density of 10 mA/cm2, and long-term durability up to 5000 cycles) for the hydrogen evolution reaction. Our findings provide understanding and control of the phase transitions in TMDs, which will allow for the efficient manufacturing and translation of phase-engineered TMDs.
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Affiliation(s)
- Hoon Ju Lee
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Myeonggi Choe
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Weiguang Yang
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Suk Woo Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Young Jin Park
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyuntae Hwang
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Manish Chhowalla
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, U.K
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyeon Suk Shin
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. NANOSCALE 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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39
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Obaidulla SM, Supina A, Kamal S, Khan Y, Kralj M. van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device. NANOSCALE HORIZONS 2023; 9:44-92. [PMID: 37902087 DOI: 10.1039/d3nh00310h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.
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Affiliation(s)
- Sk Md Obaidulla
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Antonio Supina
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Chair of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Sherif Kamal
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| | - Yahya Khan
- Department of Physics, Karakoram International university (KIU), Gilgit 15100, Pakistan
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
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40
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Awate S, Xu K, Liang J, Katz B, Muzzio R, Crespi VH, Katoch J, Fullerton-Shirey SK. Strain-Induced 2H to 1T' Phase Transition in Suspended MoTe 2 Using Electric Double Layer Gating. ACS NANO 2023; 17:22388-22398. [PMID: 37947443 PMCID: PMC10690768 DOI: 10.1021/acsnano.3c04701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Revised: 11/03/2023] [Accepted: 11/06/2023] [Indexed: 11/12/2023]
Abstract
MoTe2 can be converted from the semiconducting (2H) phase to the semimetallic (1T') phase by several stimuli including heat, electrochemical doping, and strain. This type of phase transition, if reversible and gate-controlled, could be useful for low-power memory and logic. In this work, a gate-controlled and fully reversible 2H to 1T' phase transition is demonstrated via strain in few-layer suspended MoTe2 field effect transistors. Strain is applied by the electric double layer gating of a suspended channel using a single ion conducting solid polymer electrolyte. The phase transition is confirmed by simultaneous electrical transport and Raman spectroscopy. The out-of-plane vibration peak (A1g)─a signature of the 1T' phase─is observed when VSG ≥ 2.5 V. Further, a redshift in the in-plane vibration mode (E2g) is detected, which is a characteristic of a strain-induced phonon shift. Based on the magnitude of the shift, strain is estimated to be 0.2-0.3% by density functional theory. Electrically, the temperature coefficient of resistance transitions from negative to positive at VSG ≥ 2 V, confirming the transition from semiconducting to metallic. The approach to gate-controlled, reversible straining presented here can be extended to strain other two-dimensional materials, explore fundamental material properties, and introduce electronic device functionalities.
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Affiliation(s)
- Shubham
Sukumar Awate
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Ke Xu
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- School
of Physics and Astronomy, Rochester Institute
of Technology, Rochester, New York 14623, United States
- Microsystems
Engineering, Rochester Institute of Technology, Rochester, New York 14623, United States
| | - Jierui Liang
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Benjamin Katz
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ryan Muzzio
- Department
of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Vincent H. Crespi
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jyoti Katoch
- Department
of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Susan K. Fullerton-Shirey
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Department
of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
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41
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Yun Q, Ge Y, Shi Z, Liu J, Wang X, Zhang A, Huang B, Yao Y, Luo Q, Zhai L, Ge J, Peng Y, Gong C, Zhao M, Qin Y, Ma C, Wang G, Wa Q, Zhou X, Li Z, Li S, Zhai W, Yang H, Ren Y, Wang Y, Li L, Ruan X, Wu Y, Chen B, Lu Q, Lai Z, He Q, Huang X, Chen Y, Zhang H. Recent Progress on Phase Engineering of Nanomaterials. Chem Rev 2023. [PMID: 37962496 DOI: 10.1021/acs.chemrev.3c00459] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2023]
Abstract
As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.
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Affiliation(s)
- Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Department of Chemical and Biological Engineering & Energy Institute, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yiyao Ge
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Jiawei Liu
- Institute of Sustainability for Chemicals, Energy and Environment, Agency for Science, Technology and Research (A*STAR), Singapore, 627833, Singapore
| | - Xixi Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Biao Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Qinxin Luo
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
| | - Jingjie Ge
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR
| | - Yongwu Peng
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Chengtao Gong
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Meiting Zhao
- Institute of Molecular Aggregation Science, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin 300072, China
| | - Yutian Qin
- Institute of Molecular Aggregation Science, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin 300072, China
| | - Chen Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Gang Wang
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Qingbo Wa
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xichen Zhou
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yi Ren
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Lujing Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xinyang Ruan
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yuxuan Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Bo Chen
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qipeng Lu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Xiao Huang
- Institute of Advanced Materials (IAM), School of Flexible Electronics (SoFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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42
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Jeon MJ, Hyeong SK, Jang HY, Mun J, Kim TW, Bae S, Lee SK. Selective Laser-Assisted Direct Synthesis of MoS 2 for Graphene/MoS 2 Schottky Junction. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2937. [PMID: 37999291 PMCID: PMC10674199 DOI: 10.3390/nano13222937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Revised: 11/08/2023] [Accepted: 11/10/2023] [Indexed: 11/25/2023]
Abstract
Implementing a heterostructure by vertically stacking two-dimensional semiconductors is necessary for responding to various requirements in the future of semiconductor technology. However, the chemical-vapor deposition method, which is an existing two-dimensional (2D) material-processing method, inevitably causes heat damage to surrounding materials essential for functionality because of its high synthesis temperature. Therefore, the heterojunction of a 2D material that directly synthesized MoS2 on graphene using a laser-based photothermal reaction at room temperature was studied. The key to the photothermal-reaction mechanism is the difference in the photothermal absorption coefficients of the materials. The device in which graphene and MoS2 were vertically stacked using a laser-based photothermal reaction demonstrated its potential application as a photodetector that responds to light and its stability against cycling. The laser-based photothermal-reaction method for 2D materials will be further applied to various fields, such as transparent display electrodes, photodetectors, and solar cells, in the future.
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Affiliation(s)
- Min Ji Jeon
- School of Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea; (M.J.J.)
| | - Seok-Ki Hyeong
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju 55324, Republic of Korea
| | - Hee Yoon Jang
- School of Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea; (M.J.J.)
| | - Jihun Mun
- Advanced Instrumentation Institute, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea
| | - Tae-Wook Kim
- Department of Flexible and Printable Electronics, Jeonbuk National University, Jeonju-si 54896, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonju-si 54896, Republic of Korea
| | - Sukang Bae
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonju-si 54896, Republic of Korea
| | - Seoung-Ki Lee
- School of Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea; (M.J.J.)
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43
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Xiao J, Chen K, Zhang X, Liu X, Yu H, Gao L, Hong M, Gu L, Zhang Z, Zhang Y. Approaching Ohmic Contacts for Ideal Monolayer MoS 2 Transistors Through Sulfur-Vacancy Engineering. SMALL METHODS 2023; 7:e2300611. [PMID: 37551044 DOI: 10.1002/smtd.202300611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2023] [Revised: 06/29/2023] [Indexed: 08/09/2023]
Abstract
Field-effect transistors (FETs) made of monolayer 2D semiconductors (e.g., MoS2 ) are among the basis of the future modern wafer chip industry. However, unusually high contact resistances at the metal-semiconductor interfaces have seriously limited the improvement of monolayer 2D semiconductor FETs so far. Here, a high-scale processable strategy is reported to achieve ohmic contact between the metal and monolayer MoS2 with a large number of sulfur vacancies (SVs) by using simple sulfur-vacancy engineering. Due to the successful doping of the contact regions by introducing SVs, the contact resistance of monolayer MoS2 FET is as low as 1.7 kΩ·µm. This low contact resistance enables high-performance MoS2 FETs with ultrahigh carrier mobility of 153 cm2 V-1 s-1 , a large on/off ratio of 4 × 109 , and high saturation current of 342 µA µm-1 . With the comprehensive investigation of different SV concentrations by adjusting the plasma duration, it is also demonstrated that the SV-increased electron doping, with its resulting reduced Schottky barrier, is the dominant factor driving enhanced electrical performance. The work provides a simple method to promote the development of industrialized atomically thin integrated circuits.
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Affiliation(s)
- Jiankun Xiao
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Kuanglei Chen
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiaozhi Liu
- Collaborative Innovation Center of Quantum Matter, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Li Gao
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Lin Gu
- Collaborative Innovation Center of Quantum Matter, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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44
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Guan Y, Ding Y, Fang Y, Wang G, Zhao S, Wang L, Huang J, Chen M, Hao J, Xu C, Zhen L, Huang F, Li Y, Yang L. Femtosecond Laser-Driven Phase Engineering of WS 2 for Nano-Periodic Phase Patterning and Sub-ppm Ammonia Gas Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303654. [PMID: 37415518 DOI: 10.1002/smll.202303654] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2023] [Revised: 06/19/2023] [Indexed: 07/08/2023]
Abstract
Laser-driven phase transition of 2D transition metal dichalcogenides has attracted much attention due to its high flexibility and rapidity. However, there are some limitations during the laser irradiation process, especially the unsatisfied surface ablation, the inability of nanoscale phase patterning, and the unexploited physical properties of new phase. In this work, the well-controlled femtosecond (fs) laser-driven transformation from the metallic 2M-WS2 to the semiconducting 2H-WS2 is reported, which is confirmed to be a single-crystal to single-crystal transition without layer thinning or obvious ablation. Moreover, a highly ordered 2H/2M nano-periodic phase transition with a resolution of ≈435 nm is achieved, breaking through the existing size bottleneck of laser-driven phase transition, which is attributed to the selective deposition of plasmon energy induced by fs laser. It is also demonstrated that the achieved 2H-WS2 after laser irradiation contains rich sulfur vacancies, which exhibits highly competitive ammonia gas sensing performance, with a detection limit below 0.1 ppm and a fast response/recovery time of 43/67 s at room temperature. This study provides a new strategy for the preparation of the phase-selective transition homojunction and high-performance applications in electronics.
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Affiliation(s)
- Yanchao Guan
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Ye Ding
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, China
| | - Genwang Wang
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Shouxin Zhao
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Lianfu Wang
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Jingtao Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Mengxin Chen
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Juanyuan Hao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Chengyan Xu
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Liang Zhen
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yang Li
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Lijun Yang
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
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45
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Sayers C, Genco A, Trovatello C, Conte SD, Khaustov VO, Cervantes-Villanueva J, Sangalli D, Molina-Sanchez A, Coletti C, Gadermaier C, Cerullo G. Strong Coupling of Coherent Phonons to Excitons in Semiconducting Monolayer MoTe 2. NANO LETTERS 2023; 23:9235-9242. [PMID: 37751559 PMCID: PMC10603802 DOI: 10.1021/acs.nanolett.3c01936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Revised: 09/19/2023] [Indexed: 09/28/2023]
Abstract
The coupling of the electron system to lattice vibrations and their time-dependent control and detection provide unique insight into the nonequilibrium physics of semiconductors. Here, we investigate the ultrafast transient response of semiconducting monolayer 2H-MoTe2 encapsulated with hBN using broadband optical pump-probe microscopy. The sub-40 fs pump pulse triggers extremely intense and long-lived coherent oscillations in the spectral region of the A' and B' exciton resonances, up to ∼20% of the maximum transient signal, due to the displacive excitation of the out-of-plane A1g phonon. Ab initio calculations reveal a dramatic rearrangement of the optical absorption of monolayer MoTe2 induced by an out-of-plane stretching and compression of the crystal lattice, consistent with an A1g -type oscillation. Our results highlight the extreme sensitivity of the optical properties of monolayer TMDs to small structural modifications and their manipulation with light.
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Affiliation(s)
| | - Armando Genco
- Dipartimento
di Fisica, Politecnico di Milano, 20133 Milano, Italy
| | - Chiara Trovatello
- Dipartimento
di Fisica, Politecnico di Milano, 20133 Milano, Italy
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | | | - Vladislav O. Khaustov
- Center
for Nanotechnology Innovation @ NEST, Istituto
Italiano di Tecnologia, 56127 Pisa, Italy
- Scuola
Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Jorge Cervantes-Villanueva
- Institute
of Materials Science (ICMUV), University
of Valencia, Catedrático Beltrán 2, E-46980 Valencia, Spain
| | - Davide Sangalli
- Division
of Ultrafast Processes in Materials (FLASHit), Istituto di Struttura della Materia-CNR (ISM-CNR), Area della Ricerca di Roma 1, 00016 Monterotondo, Scalo, Italy
| | - Alejandro Molina-Sanchez
- Institute
of Materials Science (ICMUV), University
of Valencia, Catedrático Beltrán 2, E-46980 Valencia, Spain
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @ NEST, Istituto
Italiano di Tecnologia, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, 16163 Genova, Italy
| | | | - Giulio Cerullo
- Dipartimento
di Fisica, Politecnico di Milano, 20133 Milano, Italy
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46
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Xia Y, Berry JM, Haataja MP. Classification and Simulation of Structural Phase Transformation-Induced Interfacial Defects in Group VI Transition-Metal Dichalcogenide Monolayers. NANO LETTERS 2023; 23:9445-9450. [PMID: 37820381 DOI: 10.1021/acs.nanolett.3c02876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Polymorphic 2D materials have recently emerged as promising candidates for use in nanoelectronic devices by way of their ability to undergo structural phase transformations induced by external fields. Under cyclic transformations, however, induced interfacial defects may proliferate and compromise the system properties. Herein, we first employ geometric analysis to classify such defects generated during the 2H ↔ 1T and 2H ↔ 1T' transformations in group VI transition-metal dichalcogenide monolayers. Then, simulations of a mesoscale model with atomistic spatial resolution are conducted to assess the proliferation of such defects during cyclic 2H ↔ 1T transformations. It is shown that defect densities reach a steady state, with the 2H phase remaining more pristine than the 1T and 1T' states. We expect that the effects of these defects on the device performance are application-dependent and will require further inquiry.
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Affiliation(s)
- Yang Xia
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Joel M Berry
- Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94550, United States
| | - Mikko P Haataja
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544, United States
- Princeton Materials Institute, Princeton University, Princeton, New Jersey 08544, United States
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47
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Wang X, Hu Y, Kim SY, Addou R, Cho K, Wallace RM. Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides. ACS NANO 2023; 17:20353-20365. [PMID: 37788682 DOI: 10.1021/acsnano.3c06494] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/05/2023]
Abstract
Tungsten transition metal dichalcogenides (W-TMDs) are intriguing due to their properties and potential for application in next-generation electronic devices. However, strong Fermi level (EF) pinning manifests at the metal/W-TMD interfaces, which could tremendously restrain the carrier injection into the channel. In this work, we illustrate the origins of EF pinning for Ni and Ag contacts on W-TMDs by considering interface chemistry, band alignment, impurities, and imperfections of W-TMDs, contact metal adsorption mechanism, and the resultant electronic structure. We conclude that the origins of EF pinning at a covalent contact metal/W-TMD interface, such as Ni/W-TMDs, can be attributed to defects, impurities, and interface reaction products. In contrast, for a van der Waals contact metal/TMD system such as Ag/W-TMDs, the primary factor responsible for EF pinning is the electronic modification of the TMDs resulting from the defects and impurities with the minor impact of metal-induced gap states. The potential strategies for carefully engineering the metal deposition approach are also discussed. This work unveils the origins of EF pinning at metal/TMD interfaces experimentally and theoretically and provides guidance on further enhancing and improving the device performance.
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Affiliation(s)
- Xinglu Wang
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Yaoqiao Hu
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Seong Yeoul Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Rafik Addou
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Kyeongjae Cho
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Robert M Wallace
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
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Zhang H, Tu X, Wu Z, Guo J, Fei L, Liao X, Yuan J, Wan S, Bie YQ, Zhou Y. Laser irradiation induced structural transformation in layered transition metal trichalcogenide nanoflakes. iScience 2023; 26:107895. [PMID: 37766970 PMCID: PMC10520514 DOI: 10.1016/j.isci.2023.107895] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/08/2023] [Revised: 05/18/2023] [Accepted: 09/08/2023] [Indexed: 09/29/2023] Open
Abstract
Laser irradiation is a powerful tool in inducing changes in lattice structures and properties of two-dimensional (2D) materials through processes such as heating, bleaching, catalysis, etc. However, the underlying mechanisms of such transformations vary dramatically in different 2D materials. Here, we report the structural transformation of layered titanium trisulfide (TiS3) to titanium disulfide (TiS2) after irradiation. We systematically characterized the dependence of the transformation on laser power, flake thickness, irradiation time, and vacuum conditions using microscopic and spectroscopic methods. The underlying mechanism is confirmed as the heat-induced materials decomposition, a process that also occurs in many other transition metal trichalcogenide materials. Furthermore, we demonstrate that this spatial-resolved method also enables the creation of in-plane TiS3-TiS2 heterostructures. Our study identifies a new family of 2D materials that undergo a structural transformation after laser irradiation and enriches the methods available for developing new prototypes of low-dimensional devices in the future.
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Affiliation(s)
- Huifeng Zhang
- Department of Materials Science, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
- Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
| | - Xiong Tu
- Department of Materials Science, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
- Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
| | - Ziyu Wu
- Department of Materials Science, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
- Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
| | - Junqing Guo
- Department of Materials Science, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
- Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
| | - Linfeng Fei
- Department of Materials Science, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
- Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
| | - Xiaxia Liao
- Department of Materials Science, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
- Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
| | - Jiaren Yuan
- Department of Materials Science, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
- Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
| | - Siyuan Wan
- Department of Materials Science, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
- Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
| | - Ya-Qing Bie
- State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, P.R. China
| | - Yangbo Zhou
- Department of Materials Science, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
- Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, P.R. China
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Jiang J, Xiong F, Sun L, Chen H, Zhu M, Xu W, Zhang J, Zhu Z. Reversible Amorphous-Crystalline Phase Transformation in an Ultrathin van der Waals FeTe System. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47661-47668. [PMID: 37783452 DOI: 10.1021/acsami.3c07765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/04/2023]
Abstract
Searching for new phase-change materials for memory and neuromorphic device applications and further understanding the phase transformation mechanism are attracting wide attention. Phase transformation from the amorphous phase to the crystal phase has been unraveled in iron telluride (FeTe) bulk film deposited by pulsed laser deposition, recently. However, the van der Waals-layered feature of FeTe in the crystal form was not noted, which will benefit the scaling of the memory devices and shine light on phase-change heterostructures or interfacial phase-change materials. Moreover, the demonstration of advanced memory or neuromorphic device applications is lacking. Here, we investigate the phase transformation of FeTe starting from mechanically exfoliated van der Waals layers from a bulk single crystal. Surficial amorphization is revealed at the surface layers of FeTe flakes after exfoliation under ambient conditions, which could be transformed back to the crystalline phase with laser irradiation or heating. The conductance drop of the flake devices near 400 K verifies the phase transformation electrically. Memristor behavior of the amorphous surface in FeTe has been further demonstrated, proving the reversibility of the phase transformation and shining light on the possible applications of neuromorphic devices.
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Affiliation(s)
- Jinbao Jiang
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Feng Xiong
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Linfeng Sun
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Haitao Chen
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Wei Xu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Jianfa Zhang
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
| | - Zhihong Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
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50
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Kim D, Pandey J, Jeong J, Cho W, Lee S, Cho S, Yang H. Phase Engineering of 2D Materials. Chem Rev 2023; 123:11230-11268. [PMID: 37589590 DOI: 10.1021/acs.chemrev.3c00132] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.
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Affiliation(s)
- Dohyun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juhi Pandey
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juyeong Jeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Woohyun Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungyeon Lee
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Suyeon Cho
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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