Mesoporous and Encapsulated In2O3/Ti3C2Tx Schottky Heterojunctions for Rapid and ppb-Level NO2 Detection at Room Temperature

Rapid and ultrasensitive detection of toxic gases at room temperature is highly desired in health protection but presents grand challenges in the sensing materials reported so far. Here, we present a gas sensor based on novel zero dimensional (0D)/two dimensional (2D) indium oxide (In2O3)/titanium carbide (Ti3C2Tx) Schottky heterostructures with a high surface area and rich oxygen vacancies for parts per billion (ppb) level nitrogen dioxide (NO2) detection at room temperature. The In2O3/Ti3C2Tx gas sensor exhibits a fast response time (4 s), good response (193.45% to 250 ppb NO2), high selectivity, and excellent cycling stability. The rich surface oxygen vacancies play the role of active sites for the adsorption of NO2 molecules, and the Schottky junctions effectively adjust the charge-transfer behavior through the conduction tunnel in the sensing material. Furthermore, In2O3 nanoparticles almost fully cover the Ti3C2Tx nanosheets which can avoid the oxidation of Ti3C2Tx, thus contributing to the good cycling stability of the sensing materials. This work sheds light on the sensing mechanism of heterojunction nanostructures and provides an efficient pathway to construct high-performance gas sensors through the rational design of active sites.

Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors

Tungsten oxide (WO3) doped indium oxide (IWO) field-effect transistors (FET), synthesized using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line (BEOL) compatibility, are demonstrated. Low-concentration (1∼4 W atom %) WO3-doping in In2O3 films is achieved by adjusting cycle ratios of the indium and tungsten precursors with the oxidant coreactant. Such doping suppresses oxygen deficiency from In2O2.5 to In2O3 stoichiometry with only 1 atom % W, allowing devices to turn off stably and enhancing threshold voltage stability. The ALD IWO FETs exhibit superior performance, including a low subthreshold slope of 67 mV/decade and negligible hysteresis. Strong tunability of the threshold voltage (Vth) is achieved through W concentration tuning, with 2 atom % IWO FETs showing an optimized Vth for enhancement-mode and a high drain current. ALD IWO FETs have remarkable stability under bias stress and nearly ideal performance extending to sub-100 nm channel lengths, making them promising candidates for high-performance monolithic 3D integrated devices.

Engineering Oxygen Vacancies in In2O3 with Enhanced Polysulfides Immobilization and Selective Catalytic Capability

Lithium-sulfur (Li-S) battery is identified as an ideal candidate for next-generation energy storage systems in consideration of its high theoretical energy density and abundant sulfur resources. However, the shuttling behavior of soluble polysulfides (LiPSs) and their sluggish reaction kinetics severely limit the practical application of the current Li-S battery. In this work, a series of In2O3 nanocubes with different oxygen vacancy concentrations are designed and prepared via a facile self-template method. The introduced oxygen vacancy on In2O3 can effectively rearrange the charge distribution and enhance sulfiphilic property. Moreover, the In2O3 with high oxygen vacancy concentration (H-In2O3) can slightly slow down the solid-liquid conversion process and significantly accelerate the liquid-solid conversion process, thus reducing the accumulation of LiPSs in electrolyte and inhibiting the shuttle effect. Contributed by the unique selective catalytic capability, the prepared H-In2O3 exhibits excellent electrochemical performance when used as sulfur host. For instance, a high reversible capacity of 609 mAh g-1 is obtained with only 0.044% capacity decay per cycle over 1000 cycles at 1.0 C. This work presents a typical example for designing advanced sulfur hosts, which is crucial for the commercialization of Li-S battery.

High-Performance Self-Powered Photoelectrochemical Ultraviolet Photodetectors Based on an In2O3 Nanocube Film

Ultraviolet photodetectors (UV PDs) have attracted significant attention due to their wide range of applications, such as underwater communication, biological analysis, and early fire warning systems. Indium oxide (In2O3) is a candidate for developing high-performance photoelectrochemical (PEC)-type UV PDs owing to its high UV absorption and good stability. However, the self-powered photoresponse of the previously reported In2O3-based PEC UV PDs is unsatisfactory. In this work, high-performance self-powered PEC UV PDs were constructed by using an In2O3 nanocube film (NCF) as a photoanode. In2O3 NCF photoanodes were synthesized on FTO by using hydrothermal methods with a calcining process. The influence of the electrolyte concentration, bias potential, and irradiation light on the photoresponse properties was systematically studied. In2O3 NCF PEC UV PDs exhibit outstanding self-powered photoresponses to 365 nm UV light with a high responsivity of 44.43 mA/W and fast response speed (20/30 ms) under zero bias potential, these results are superior to those of previously reported In2O3-based PEC UV PDs. The improved self-powered photoresponse is attributed to the higher photogenerated carrier separation efficiency and faster charge transport of the in-situ grown In2O3 NCF. In addition, these PDs exhibit excellent multicycle stability, maintaining the photocurrent at 98.69% of the initial value after 700 optical switching cycles. Therefore, our results prove the great promise of In2O3 in self-powered PEC UV PDs.

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

Indium oxide (In2O3) is a transparent wide-bandgap semiconductor suitable for use in the back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional (M3D) devices. The structural, chemical, and electrical properties of In2O3 films deposited by plasma-enhanced atomic layer deposition (PEALD) were examined using two different liquid-based precursors: (3-(dimethylamino)propyl)-dimethyl indium (DADI) and (N,N-dimethylbutylamine)trimethylindium (DATI). DATI-derived In2O3 films had higher growth per cycle (GPC), superior crystallinity, and low defect density compared with DADI-derived In2O3 films. Density functional theory calculations revealed that the structure of DATI can exhibit less steric hindrance compared with that of DADI, explaining the superior physical and electrical properties of the DATI-derived In2O3 film. DATI-derived In2O3 field-effect transistors (FETs) exhibited unprecedented performance, showcasing a high field-effect mobility of 115.8 cm2/(V s), a threshold voltage of -0.12 V, and a low subthreshold gate swing value of <70 mV/decade. These results were achieved by employing a 10-nm-thick HfO2 gate dielectric layer with an effective oxide thickness of 3.9 nm. Both DADI and DATI-derived In2O3 FET devices exhibited remarkable stability under bias stress conditions due to a high-quality In2O3 channel layer, good gate dielectric/channel interface matching, and a suitable passivation layer. These findings underscore the potential of ALD In2O3 films as promising materials for upper-layer channels in the next generation of M3D devices.

Effect of Different In2O3(111) Surface Terminations on CO2 Adsorption

In2O3-based catalysts have shown high activity and selectivity for CO2 hydrogenation to methanol; however, the origin of the high performance of In2O3 is still unclear. To elucidate the initial steps of CO2 hydrogenation over In2O3, we have combined X-ray photoelectron spectroscopy and density functional theory calculations to study the adsorption of CO2 on the In2O3(111) crystalline surface with different terminations, namely, the stoichiometric, reduced, and hydroxylated surface. The combined approach confirms that the reduction of the surface results in the formation of In adatoms and that water dissociates on the surface at room temperature. A comparison of the experimental spectra and the computed core-level shifts (using methanol and formic acid as benchmark molecules) suggests that CO2 adsorbs as a carbonate on all three surface terminations. We find that the adsorption of CO2 is hindered by hydroxyl groups on the hydroxylated surface.

Structure, Conductivity, and Sensor Properties of Nanosized ZnO-In2O3 Composites: Influence of Synthesis Method

The influence of the method used for synthesizing ZnO-In2O3 composites (nanopowder mixing, impregnation, and hydrothermal method) on the structure, conductivity, and sensor properties is investigated. With the nanopowder mixing, the size of the parent nanoparticles in the composite remains practically unchanged in the range of 50-100 nm. The impregnation composites consist of 70 nm In2O3 nanoparticles with ZnO nanoclusters < 30 nm in size located on its surface. The nanoparticles in the hydrothermal composites have a narrow size distribution in the range of 10-20 nm. The specific surface of hydrothermal samples is five times higher than that of impregnated samples. The sensor response of the impregnated composite to 1100 ppm H2 is 1.3-1.5 times higher than the response of the mixed composite. Additives of 15-20 and 85 wt.% ZnO to mixed and impregnated composites lead to an increase in the response compared with pure In2O3. In the case of hydrothermal composite, up to 20 wt.% ZnO addition leads to a decrease in response, but 65 wt.% ZnO addition increases response by almost two times compared with pure In2O3. The sensor activity of a hydrothermal composite depends on the phase composition of In2O3. The maximum efficiency is reached for the composite containing cubic In2O3 and the minimum for rhombohedral In2O3. An explanation is provided for the observed effects.

Key Factors in Enhancing Pseudocapacitive Properties of PANI-InOx Hybrid Thin Films Prepared by Sequential Infiltration Synthesis

Sequential infiltration synthesis (SIS) is an emerging vapor-phase synthetic route for the preparation of organic-inorganic composites. Previously, we investigated the potential of polyaniline (PANI)-InO_x composite thin films prepared using SIS for application in electrochemical energy storage. In this study, we investigated the effects of the number of InO_x SIS cycles on the chemical and electrochemical properties of PANI-InO_x thin films via combined characterization using X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy, Raman spectroscopy, Fourier transform infrared spectroscopy, and cyclic voltammetry. The area-specific capacitance values of PANI-InO_x samples prepared with 10, 20, 50, and 100 SIS cycles were 1.1, 0.8, 1.4, and 0.96 mF/cm², respectively. Our result shows that the formation of an enlarged PANI-InO_x mixed region directly exposed to the electrolyte is key to enhancing the pseudocapacitive properties of the composite films.

Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing

In this work, the ultrathin two-dimensional (2D) indium oxide (InO_x) with a large area of more than 100 μm² and a high degree of uniformity was automatically peeled off from indium by the liquid-metal printing technique. Raman and optical measurements revealed that 2D-InO_x has a polycrystalline cubic structure. By altering the printing temperature which affects the crystallinity of 2D-InO_x, the mechanism of the existence and disappearance of memristive characteristics was established. The tunable characteristics of the 2D-InO_x memristor with reproducible one-order switching was manifest from the electrical measurements. Further adjustable multistate characteristics of the 2D-InO_x memristor and its resistance switching mechanism were evaluated. A detailed examination of the memristive process demonstrated the Ca²⁺ mimic dynamic in 2D-InO_x memristors as well as the fundamental principles underlying biological and artificial synapses. These surveys allow us to comprehend a 2D-InO_x memristor using the liquid-metal printing technique and could be applied to future neuromorphic applications and in the field of revolutionary 2D material exploration.

Transducer-Aware Hydroxy-Rich-Surface Indium Oxide Gas Sensor for Low-Power and High-Sensitivity NO2 Gas Sensing

Low-power metal oxide (MOX)-based gas sensors are widely applied in edge devices. To reduce power consumption, nanostructured MOX-based sensors that detect gas at low temperatures have been reported. However, the fabrication process of these sensors is difficult for mass production, and these sensors are lack uniformity and reliability. On the other hand, MOX film-based gas sensors have been commercialized but operate at high temperatures and exhibit low sensitivity. Herein, commercially advantageous highly sensitive, film-based indium oxide sensors operating at low temperatures are reported. Ar and O₂ gases are simultaneously injected during the sputtering process to form a hydroxy-rich-surface In₂O₃ film. Conventional indium oxide (In₂O₃) films (A0) and hydroxy-rich indium oxide films (A1) are compared using several analytical techniques. A1 exhibits a work function of 4.92 eV, larger than that of A0 (4.42 eV). A1 exhibits a Debye length 3.7 times longer than that of A0. A1 is advantageous for gas sensing when using field effect transistors (FETs) and resistors as transducers. Because of the hydroxy groups present on the surface of A1, A1 can react with NO₂ gas at a lower temperature (∼100 °C) than A0 (180 °C). Operando diffuse reflectance infrared Fourier transform spectrometry (DRIFTS) shows that NO₂ gas is adsorbed to A1 as nitrite (NO₂^-) at 100 °C and nitrite and nitrate (NO₃^-) at 200 °C. After NO₂ is adsorbed as nitrate, the sensitivity of the A1 sensor decreases and its low-temperature operability is compromised. On the other hand, when NO₂ is adsorbed only as nitrite, the performance of the sensor is maintained. The reliable hydroxy-rich FET-type gas sensor shows the best performance compared to that of the existing film-based NO₂ gas sensors, with a 2460% response to 500 ppb NO₂ gas at a power consumption of 1.03 mW.

Realizing the Heteromorphic Superlattice: Repeated Heterolayers of Amorphous Insulator and Polycrystalline Semiconductor with Minimal Interface Defects

An unconventional "heteromorphic" superlattice (HSL) is realized, comprised of repeated layers of different materials with differing morphologies: semiconducting pc-In₂ O₃ layers interleaved with insulating a-MoO₃ layers. Originally proposed by Tsu in 1989, yet never fully realized, the high quality of the HSL heterostructure demonstrated here validates the intuition of Tsu, whereby the flexibility of the bond angle in the amorphous phase and the passivation effect of the oxide at interfacial bonds serve to create smooth, high-mobility interfaces. The alternating amorphous layers prevent strain accumulation in the polycrystalline layers while suppressing defect propagation across the HSL. For the HSL with 7:7 nm layer thickness, the observed electron mobility of 71 cm²  Vs^-1 , matches that of the highest quality In₂ O₃ thin films. The atomic structure and electronic properties of crystalline In₂ O₃ /amorphous MoO₃ interfaces are verified using ab-initio molecular dynamics simulations and hybrid functional calculations. This work generalizes the superlattice concept to an entirely new paradigm of morphological combinations.

Ni-Doped In2O3 Nanoparticles and Their Composite with rGO for Efficient Degradation of Organic Pollutants in Wastewater under Visible Light Irradiation

The efficient degradation of organic effluent is always desirable when using advanced photocatalysts with enhanced activity under visible light. Nickel-doped indium oxide (Ni-In₂O₃) is synthesized via a hydrothermal route as well as its composites with reduced graphene oxide (rGO). Facile synthesis and composite formation methods lead to a well-defined morphology of fabricated nanocomposite at low temperatures. The bandgap energy of indium oxide lies in the range of 3.00-4.30 eV. Its high light absorption capacity, high stability, and non-toxicity make it a choice as a photocatalyst that is active under visible light. The transition metal Ni-doping changes the indium oxide's chemical, optical, and physicochemical properties. The Ni-In₂O₃ and rGO composites improved the charge transport and reduced the charge recombination. The phase analysis of the developed photocatalysts was performed using X-ray diffraction (XRD), and the morphological and structural properties were observed using advanced microscopic techniques (SEM and TEM), while UV-vis and FTIR spectroscopic techniques were used to confirm the structure and optical and chemical properties. The electrochemical properties of the photocatalysts were investigated using cyclic voltammetry (CV), linear sweep voltammetry (LSV), and electrochemical impedance spectroscopy (EIS), and the charge-transfer properties of the obtained photocatalysts and the mechanism of the photocatalytic degradation mechanism of methylene blue, a common dye used in the dyeing industry, were determined.

Controlled Synthesis and Enhanced Gas Sensing Performance of Zinc-Doped Indium Oxide Nanowires

Indium oxide (In₂O₃) is a widely used n-type semiconductor for detection of pollutant gases; however, its gas selectivity and sensitivity have been suboptimal in previous studies. In this work, zinc-doped indium oxide nanowires with appropriate morphologies and high crystallinity were synthesized using chemical vapor deposition (CVD). An accurate method for electrical measurement was attained using a single nanowire microdevice, showing that electrical resistivity increased after doping with zinc. This is attributed to the lower valence of the dopant, which acts as an acceptor, leading to the decrease in electrical conductivity. X-ray photoelectron spectroscopy (XPS) analysis confirms the increased oxygen vacancies due to doping a suitable number of atoms, which altered oxygen adsorption on the nanowires and contributed to improved gas sensing performance. The sensing performance was evaluated using reducing gases, including carbon monoxide, acetone, and ethanol. Overall, the response of the doped nanowires was found to be higher than that of undoped nanowires at a low concentration (5 ppm) and low operating temperatures. At 300 °C, the gas sensing response of zinc-doped In₂O₃ nanowires was 13 times higher than that of undoped In₂O₃ nanowires. The study concludes that higher zinc doping concentration in In₂O₃ nanowires improves gas sensing properties by increasing oxygen vacancies after doping and enhancing gas molecule adsorption. With better response to reducing gases, zinc-doped In₂O₃ nanowires will be applicable in environmental detection and life science.

Probing the Roles of Indium Oxides on Copper Catalysts for Enhanced Selectivity during CO2-to-CO Electrochemical Reduction

The electrochemical CO₂ reduction reaction (CO₂RR) provides an alternative protocol to producing industrial chemicals with renewable electricity sources, and the highly selective, durable, and economic catalysts should expedite CO₂RR applications. Here, we demonstrate a composite Cu-In₂O₃ catalyst in which a trace amount of In₂O₃ decorated on Cu surface greatly improves the selectivity and stability for CO₂-to-CO reduction as compared to the counterparts (Cu or In₂O₃), realizing a CO faradaic efficiency (FE_CO) of 95% at -0.7 V (vs RHE) and no obvious degradation within 7 h. In situ X-ray absorption spectroscopy reveals that In₂O₃ undergoes the redox reaction and preserves the metallic state of Cu during the CO₂RR process. Strong electronic interaction and coupling occur at the Cu/In₂O₃ interface which serves as the active site for selective CO₂RR. Theoretical calculation confirms the roles of In₂O₃ in preventing oxidation and altering the electronic structure of Cu to assist COOH* formation and demote CO* adsorption at the Cu/In₂O₃ interface.

One-Step Phase Separation for Core-Shell Carbon@Indium Oxide@Bismuth Microspheres with Enhanced Activity for CO2 Electroreduction to Formate

It is a substantial challenge to construct electrocatalysts with high activity, good selectivity, and long-term stability for electrocatalytic reduction of carbon dioxide to formic acid. Herein, bismuth and indium species are innovatively integrated into a uniform heterogeneous spherical structure by a neoteric quasi-microemulsion method, and a novel C@In₂ O₃ @Bi₅₀ core-shell structure is constructed through a subsequent one-step phase separation strategy due to melting point difference and Kirkendall effect with the nano-limiting effect of the carbon structure. This core-shell C@In₂ O₃ @Bi₅₀ catalyst can selectively reduce CO₂ to formate with high selectivity (≈90% faradaic efficiency), large partial current density (24.53 mA cm^-2 at -1.36 V), and long-term stability (up to 14.5 h), superior to most of the Bi-based catalysts. The hybrid Bi/In₂ O₃ interfaces of core-shell C@In₂ O₃ @Bi will stabilize the key intermediate HCOO* and suppress CO poisoning, benefiting the CO₂ RR selectivity and stability, while the internal cavity of core-shell structure will improve the reaction kinetics because of the large specific surface area and the enhancement of ion shuttle and electron transfer. Furthermore, the nano-limited domain effect of outmost carbon prevent active components from oxidation and agglomeration, helpful for stabilizing the catalyst. This work offers valuable insights into core-shell structure engineering to promote practical CO₂ conversion technology.

Revealing the Chemical State of Palladium in Operating In2 O3 Gas Sensors: Metallic Pd Enhances Sensing Response and Intermetallic Inx Pdy Compound Blocks It

The sensing response of metal oxides activated with noble metal nanoparticles is significantly influenced by changes to the chemical state of corresponding elements under operating conditions. Here, a PdO/rh-In₂ O₃ consisting of PdO nanoparticles loaded onto rhombohedral In₂ O₃ was studied as a gas sensor for H₂ gas (100-40000 ppm in an oxygen-free atmosphere) in the temperature range of 25-450 °C. The phase composition and chemical state of elements were examined by resistance measurements combined with synchrotron-based in situ X-ray diffraction and ex situ X-ray photoelectron spectroscopy. As found, PdO/rh-In₂ O₃ undergoes a series of structural and chemical transformations during operation: from PdO to Pd/PdH_x and finally to the intermetallic In_x Pd_y phase. The maximal sensing response (R_N2 /R_H2 ) of ∼5 ⋅ 10⁷ towards 40000 ppm (4 vol %) H₂ at 70 °C is correlated with the formation of PdH_0.706 /Pd. The In_x Pd_y intermetallic compounds formed around 250 °C significantly decrease the sensing response.

Imbedding Pd Nanoparticles into Porous In2O3 Structure for Enhanced Low-Concentration Methane Sensing

Methane (CH₄), as the main component of natural gas and coal mine gas, is widely used in daily life and industrial processes and its leakage always causes undesirable misadventures. Thus, the rapid detection of low concentration methane is quite necessary. However, due to its robust chemical stability resulting from the strong tetrahedral-symmetry structure, the methane molecules are usually chemically inert to the sensing layers in detectors, making the rapid and efficient alert a big challenge. In this work, palladium nanoparticles (Pd NPs) embedded indium oxide porous hollow tubes (In₂O₃ PHTs) were successfully synthesized using Pd@MIL-68 (In) MOFs as precursors. All In₂O₃-based samples derived from Pd@MIL-68 (In) MOFs inherited the morphology of the precursors and exhibited the feature of hexagonal hollow tubes with porous architecture. The gas-sensing performances to 5000 ppm CH₄ were evaluated and it was found that Pd@In₂O₃-2 gave the best response (R_a/R_g = 23.2) at 370 °C, which was 15.5 times higher than that of pristine-In₂O₃ sensors. In addition, the sensing materials also showed superior selectivity against interfering gases and a rather short response/recovery time of 7 s/5 s. The enhancement in sensing performances of Pd@In₂O₃-2 could be attributed to the large surface area, rich porosity, abundant oxygen vacancies and the catalytic function of Pd NPs.

Synthesis, Structural and Sensor Properties of Nanosized Mixed Oxides Based on In2O3 Particles

The paper considers the relationship between the structure and properties of nanostructured conductometric sensors based on binary mixtures of semiconductor oxides designed to detect reducing gases in the environment. The sensor effect in such systems is determined by the chemisorption of molecules on the surface of catalytically active particles and the transfer of chemisorbed products to electron-rich nanoparticles, where these products react with the analyzed gas. In this regard, the role is evaluated of the method of synthesizing the composites, the catalytic activity of metal oxides (CeO₂, SnO₂, ZnO), and the type of conductivity of metal oxides (Co₃O₄, ZrO₂) in the sensor process. The effect of oxygen vacancies present in the composites on the performance characteristics is also considered. Particular attention is paid to the influence of the synthesis procedure for preparing sensitive layers based on CeO₂-In₂O₃ on the structure of the resulting composites, as well as their conductive and sensor properties.

Water Structures Reveal Local Hydrophobicity on the In2O3(111) Surface

Clean oxide surfaces are generally hydrophilic. Water molecules anchor at undercoordinated surface metal atoms that act as Lewis acid sites, and they are stabilized by H bonds to undercoordinated surface oxygens. The large unit cell of In₂O₃(111) provides surface atoms in various configurations, which leads to chemical heterogeneity and a local deviation from this general rule. Experiments (TPD, XPS, nc-AFM) agree quantitatively with DFT calculations and show a series of distinct phases. The first three water molecules dissociate at one specific area of the unit cell and desorb above room temperature. The next three adsorb as molecules in the adjacent region. Three more water molecules rearrange this structure and an additional nine pile up above the OH groups. Despite offering undercoordinated In and O sites, the rest of the unit cell is unfavorable for adsorption and remains water-free. The first water layer thus shows ordering into nanoscopic 3D water clusters separated by hydrophobic pockets.

Highly Sensitive MEMS Sensor Using Bimetallic Pd-Ag Nanoparticles as Catalyst for Acetylene Detection

Acetylene detection plays an important role in fault diagnosis of power transformers. However, the available dissolved gas analysis (DGA) techniques have always relied on bulky instruments and are time-consuming. Herein, a high-performance acetylene sensor was fabricated on a microhotplate chip using In₂O₃ as the sensing material. To achieve high sensing response to acetylene, Pd-Ag core-shell nanoparticles were synthesized and used as catalysts. The transmission electron microscopy (TEM) image clearly shows that the Ag shell is deposited on one face of the cubic Pd nanoseeds. By loading the Pd-Ag bimetallic catalyst onto the surface of In₂O₃ sensing material, the acetylene sensor has been fabricated for acetylene detection. Due to the high catalytic performance of Pd-Ag bimetallic nanoparticles, the microhotplate sensor has a high response to acetylene gas, with a limit of detection (LOD) of 10 ppb. In addition to high sensitivity, the fabricated microhotplate sensor exhibits satisfactory selectivity, good repeatability, and fast response to acetylene. The high performance of the microhotplate sensor for acetylene gas indicates the application potential of trace acetylene detection in power transformer fault diagnosis.

MOF-Derived In2O3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors

Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In₂O₃)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In₂O₃-based PEC UV PDs for the first time. In₂O₃ microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In₂O₃ MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 10¹⁰ Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In₂O₃ MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In₂O₃ holds great promise in high-performance PEC UV PDs.

Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

We successfully demonstrated a transition from a metallic InO_x film into a nondegenerate semiconductor InO_x:H film. A hydrogen-doped amorphous InO_x:H (a-InO_x:H) film, which was deposited by sputtering in Ar, O₂, and H₂ gases, could be converted into a polycrystalline InO_x:H (poly-InO_x:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.9 cm²V^-1s^-1 for an a-InO_x:H film to 77.2 cm²V^-1s^-1 for a poly-InO_x:H film. Furthermore, the carrier density of a poly-InO_x:H film could be reduced by SPC in air to as low as 2.4 × 10¹⁷ cm^-3, which was below the metal-insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InO_x channel did not show any switching properties. In contrast, that with a 50 nm thick nondegenerate poly-InO_x:H channel could be fully depleted by a gate electric field. For the InO_x:H TFTs with a channel carrier density close to the MIT point, maximum and average field effect mobility (μ_FE) values of 125.7 and 84.7 cm²V^-1s^-1 were obtained, respectively. We believe that a nondegenerate poly-InO_x:H film has great potential for boosting the μ_FE of oxide TFTs.

Multifunctional Nanohybrid of Alumina and Indium Oxide Prepared Using the Atomic Layer Deposition Technique

Developing new transparent conducting materials, especially those having flexibility, is of great interest for electronic applications. Here, our study on using the ozone-assisted atomic layer deposition (ALD) technique at a low temperature of 200 °C for making an ultrathin, transparent, flexible, and highly electroconducting nanohybrid of indium and aluminum oxides is introduced. Through various characterizations, measurements, and density functional theory-based calculations, excellent electrical conductivity (∼950 S cm^-1), transparency (95% in the visible region), and flexibility (bendable angle of 130° for 10 000 cycles) of our nanohybrid oxide thin film with a total layer thickness below 15 nm (2-4 nm for alumina and 10 nm for indium oxide) have been revealed and discussed. Besides, potential sensing applications of our oxide films on a flexible substrate have been demonstrated, such as strain sensors, temperature sensors (25-100 °C, resolution of 0.1 °C), and NO₂ gas sensors (0.35-3.5 ppm, optimum operation at 65-75 °C). With the great potential in not only transparent conducting oxide but also sensing applications, our multifunctional nanohybrid prepared using a simple ozone-assisted ALD route opens more room for the applicability of transparent and flexible electronics.

High-Performance Temperature Sensor by Employing Screen Printing Technology

In the present study, a high-performance n-type temperature sensor was developed by a new and facile synthesis approach, which could apply to ambient temperature applications. As impacted by the low sintering temperature of flexible polyimide substrates, a screen printing technology-based method to prepare thermoelectric materials and a low-temperature heat treatment process applying to polymer substrates were proposed and achieved. By regulating the preparation parameters of the high-performance n-type indium oxide material, the optimal proportioning method and the post-treatment process method were developed. The sensors based on thermoelectric effects exhibited a sensitivity of 162.5 μV/°C, as well as a wide range of temperature measurement from ambient temperature to 223.6 °C. Furthermore, it is expected to conduct temperature monitoring in different scenarios through a sensor prepared in masks and mechanical hands, laying a foundation for the large-scale manufacturing and widespread application of flexible electronic skin and devices.

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination

Multilayered heterostructures comprising of In2 O3 , SnO2 , and Al2 O3 were studied for their application in thin-film transistors (TFT). The compositional influence of tin oxide on the properties of the thin-film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200 °C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post-deposition annealing at 400 °C the thin-films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al2 O3 in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In2 O3 /SnO2 /Al2 O3 are incorporated into TFT devices, exhibiting a saturation field-effect mobility (μsat ) of 2.0 cm2  ⋅ V-1  s-1 , a threshold-voltage (Vth ) of 8.6 V, a high current on/off ratio (IOn /IOff ) of 1.0×107 , and a subthreshold swing (SS) of 485 mV ⋅ dec-1 . The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm).

Investigation of doping effects of different noble metals for ethanol gas sensors based on mesoporous In2O3

Elaborating the sensitization effects of different noble metals on In₂O₃has great significance in providing an optimum method to improve ethanol sensing performance. In this study, long-range ordered mesoporous In₂O₃has been fabricated through replicating the structure of SBA-15. Different noble metals (Au, Ag, Pt and Pd) with the same doping amount (1 at%) have been introduced by anin situdoping routine. The results of the gas sensing investigation indicate that the gas responses towards ethanol can be obviously increased by doping different noble metals. In particular, the best sensing performance towards ethanol detection can be achieved through Pd doping, and the sensors based on Pd-doped In₂O₃not only possess the highest response (39.0-100 ppm ethanol) but also have the shortest response and recovery times at the optimal operating temperature of 250 °C. The sensing mechanism of noble metal doped materials can be attributed to the synergetic effect combining 'catalysis' and 'electronic and chemical sensitization' of noble metals. In particular, the chemical state of the noble metal also has a great influence on the gas sensing mechanism. A detailed explanation of the enhancement of gas sensing performance through noble metal doping is presented in the gas sensing mechanism part of the manuscript.

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Indium oxide (In₂O₃) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In₂O₃ film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In₂O₃ film was prepared by ALD using a remote O₂ plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In₂O₃ films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

Enhanced CO2 Photocatalysis by Indium Oxide Hydroxide Supported on TiN@TiO2 Nanotubes

Herein is developed a ternary heterostructured catalyst, based on a periodic array of 1D TiN nanotubes, with a TiO₂ nanoparticulate intermediate layer and a In₂O_3-x(OH)_y nanoparticulate shell for improved performance in the photocatalytic reverse water gas shift reaction. It is demonstrated that the ordering of the three components in the heterostructure sensitively determine its activity in CO₂ photocatalysis. Specifically, TiN nanotubes not only provide a photothermal driving force for the photocatalytic reaction, owing to their strong optical absorption properties, but they also serve as a crucial scaffold for minimizing the required quantity of In₂O_3-x(OH)_y nanoparticles, leading to an enhanced CO production rate. Simultaneously, the TiO₂ nanoparticle layer supplies photogenerated electrons and holes that are transferred to active sites on In₂O_3-x(OH)_y nanoparticles and participate in the reactions occurring at the catalyst surface.

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

The electronic and optical properties of (In_xGa_1-x)₂O₃ alloys are highly tunable, giving rise to a myriad of applications including transparent conductors, transparent electronics, and solar-blind ultraviolet photodetectors. Here, we investigate these properties for a high quality pulsed laser deposited film which possesses a lateral cation composition gradient (0.01 ≤ x ≤ 0.82) and three crystallographic phases (monoclinic, hexagonal, and bixbyite). The optical gaps over this composition range are determined, and only a weak optical gap bowing is found (b = 0.36 eV). The valence band edge evolution along with the change in the fundamental band gap over the composition gradient enables the surface space-charge properties to be probed. This is an important property when considering metal contact formation and heterojunctions for devices. A transition from surface electron accumulation to depletion occurs at x ∼ 0.35 as the film goes from the bixbyite In₂O₃ phase to the monoclinic β-Ga₂O₃ phase. The electronic structure of the different phases is investigated by using density functional theory calculations and compared to the valence band X-ray photoemission spectra. Finally, the properties of these alloys, such as the n-type dopability of In₂O₃ and use of Ga₂O₃ as a solar-blind UV detector, are understood with respect to other common-cation compound semiconductors in terms of simple chemical trends of the band edge positions and the hydrostatic volume deformation potential.

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

In this work, we demonstrate enhancement-mode field-effect transistors by an atomic-layer-deposited (ALD) amorphous In₂O₃ channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In₂O₃. Controllable thickness of In₂O₃ at atomic scale enables the design of sufficient 2D carrier density in the In₂O₃ channel integrated with the conventional dielectric. The threshold voltage and channel carrier density are found to be considerably tuned by channel thickness. Such a phenomenon is understood by the trap neutral level (TNL) model, where the Fermi-level tends to align deeply inside the conduction band of In₂O₃ and can be modulated to the bandgap in atomic layer thin In₂O₃ due to the quantum confinement effect, which is confirmed by density function theory (DFT) calculation. The demonstration of enhancement-mode amorphous In₂O₃ transistors suggests In₂O₃ is a competitive channel material for back-end-of-line (BEOL) compatible transistors and monolithic 3D integration applications.

Plasmonic Titanium Nitride Facilitates Indium Oxide CO2 Photocatalysis

Nanoscale titanium nitride TiN is a metallic material that can effectively harvest sunlight over a broad spectral range and produce high local temperatures via the photothermal effect. Nanoscale indium oxide-hydroxide, In₂ O_{3- x} (OH)_y , is a semiconducting material capable of photocatalyzing the hydrogenation of gaseous CO₂ ; however, its wide electronic bandgap limits its absorption of photons to the ultraviolet region of the solar spectrum. Herein, the benefits of both nanomaterials in a ternary heterostructure: TiN@TiO₂ @In₂ O_{3- x} (OH)_y are combined. This heterostructured material synergistically couples the metallic TiN and semiconducting In₂ O_{3- x} (OH)_y phases via an interfacial semiconducting TiO₂ layer, allowing it to drive the light-assisted reverse water gas shift reaction at a conversion rate greatly surpassing that of its individual components or any binary combinations thereof.

Resolving the Atomic Structure of Sequential Infiltration Synthesis Derived Inorganic Clusters

Sequential infiltration synthesis (SIS) is a route to the precision deposition of inorganic solids in analogy to atomic layer deposition but occurs within (vs upon) a soft material template. SIS has enabled exquisite nanoscale morphological complexity in various oxides through selective nucleation in block copolymers templates. However, the earliest stages of SIS growth remain unresolved, including the atomic structure of nuclei and the evolution of local coordination environments, before and after polymer template removal. We employed In K-edge extended X-ray absorption fine structure and atomic pair distribution function analysis of high-energy X-ray scattering to unravel (1) the structural evolution of InO_xH_y clusters inside a poly(methyl methacrylate) (PMMA) host matrix and (2) the formation of porous In₂O₃ solids (obtained after annealing) as a function of SIS cycle number. Early SIS cycles result in InO_xH_y cluster growth with high aspect ratio, followed by the formation of a three-dimensional network with additional SIS cycles. That the atomic structures of the InO_xH_y clusters can be modeled as multinuclear clusters with bonding patterns related to those in In₂O₃ and In(OH)₃ crystal structures suggests that SIS may be an efficient route to 3D arrays of discrete-atom-number clusters. Annealing the mixed inorganic/polymer films in air removes the PMMA template and consolidates the as-grown clusters into cubic In₂O₃ nanocrystals with structural details that also depend on SIS cycle number.

Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating n-type Indium Oxide and p-type Carbon Nanotube Field-Effect Transistors

Special radiation-hard and ultralow-power complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are used in the fields of deep space, nuclear energy, and medical X-ray imaging. In this work, we first constructed radiation-hard, repairable, and sub-1 V-driven printed hybrid CMOS field-effect transistors (FETs) and ICs, which integrate printed carbon nanotube (CNT) (band gap ∼ 0.65 eV) p-type FETs and indium oxide (In₂O₃) (band gap ∼3.64 eV) n-type FETs on glass substrates using a printed PS-PMMA/[EMIM][TFSI] mixture as the gate dielectric layer. The PS-PMMA/[EMIM][TFSI] mixture gate dielectric layer not only lowered the supply voltage (V_DD) by providing ultrahigh gate efficiency but also improved the anti-irradiation ability of the hybrid CMOS FETs and ICs. Specifically, the hybrid CMOS inverters exhibited rail-to-rail output with a high voltage gain and high noise margins at a low V_DD that could be scaled down to 0.4 V. Furthermore, the hybrid CMOS FETs and ICs showed excellent radiation hardness, that is, withstanding a 3 Mrad (Si) total irradiation dose (TID) at a dose rate of 560 rad s^-1 (Si), which is an exceptional result for CMOS transistors and ICs. Furthermore, the radiation-damaged CMOS FETs could be fully recovered by removing and reprinting the PS-PMMA/[EMIM][TFSI] mixture gate dielectric layer, indicating the ability to repair irradiation damage. This work provides an in-space IC fabrication technology.

Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity

In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor-liquid-solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the length of the nanowires could be over 30 μm, confirmed by field-emission scanning electron microscopy (SEM). Characterization was conducted with X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence spectrum (PL). High-resolution TEM studies confirm that the grown nanowires were single crystalline c-In2O3 nanowires of body-centered cubic structures. The room temperature PL spectrum shows a strong peak around 2.22 eV, originating from the defects in the crystal structure. The electrical resistivity of a single indium oxide nanowire was measured to be 1.0 × 10-4 Ω⋅cm, relatively low as compared with previous works, which may result from the abundant oxygen vacancies in the nanowires, acting as unintentional doping.

Effect of Humidity on Light-Activated NO and NO2 Gas Sensing by Hybrid Materials

Air humidity is one of the main factors affecting the characteristics of semiconductor gas sensors, especially at low measurement temperatures. In this work we analyzed the influence of relative humidity on sensor properties of the hybrid materials based on the nanocrystalline SnO₂ and In₂O₃ and Ru (II) heterocyclic complex and verified the possibility of using such materials for NO (0.25–4.0 ppm) and NO₂ (0.05–1.0 ppm) detection in high humidity conditions (relative humidity (RH) = 20%, 40%, 65%, 90%) at room temperature during periodic blue (λ_max = 470 nm) illumination. To reveal the reasons for the different influence of humidity on the sensors’ sensitivity when detecting NO and NO₂, electron paramagnetic resonance (EPR) spectroscopy and diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) investigations were undertaken. It was established that the substitution of adsorbed oxygen by water molecules causes the decrease in sensor response to NO in humid air. The influence of humidity on the interaction of sensitive materials with NO₂ is determined by the following factors: the increase in charge carrier’s concentration, the decrease in the number of active sites capable of interacting with gases, and possible substitution of chemisorbed oxygen with NO₂⁻ groups.

Synthesis of V-doped In2O3 Nanocrystals via Digestive-Ripening Process and Their Electrocatalytic Properties in CO2 Reduction Reaction

The development of synthetic methods for monodisperse nanomaterial is of great importance in science and technology related to nanomaterials. The strong demands to prepare exceptionally monodisperse nanocrystals have made digestive-ripening one of the most sought-after size-focusing processes. Although digestive-ripening processes have been demonstrated to produce various metals and semiconductors, their applicability to oxides has rarely been studied despite various unique properties and applications of oxide nanomaterials. In this work, we demonstrate the successful synthesis of monodisperse V-doped In₂O₃ nanocrystals via a modified digestive-ripening process. The nanocrystals have truncated octahedral shape faceted with eight (222) and six (220) planes. To the best of our knowledge, this is the first report on the digestive-ripening synthesis of highly symmetrical doped oxide nanocrystals. Moreover, V-doped In₂O₃ nanocrystals exhibit electrocatalytic activities for CO₂ electrochemical reduction and produce CH₃OH, which has not been attainable from previously reported electrocatalysts based on indium or indium oxide. This distinctive catalytic property of V-doped In₂O₃ is attributed to the presence of V-dopants in the In₂O₃ host. Our demonstration has important implications for both nanocrystal synthesis and electrocatalyst development.

The Itinerant 2D Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon- and Energy-Conversion Applications

Transparent conducting oxides (TCO) have integral and emerging roles in photovoltaic, thermoelectric energy conversion, and more recently, photocatalytic systems. The functional properties of TCOs, and thus their role in these applications, are often mediated by the bulk electronic band structure but are also strongly influenced by the electronic structure of the native surface 2D electron gas (2DEG), particularly under operating conditions. This study investigates the 2DEG, and its response to changes in chemistry, at the (111) surface of the model TCO In₂ O₃ , through angle resolved and core level X-ray photoemission spectroscopy. It is found that the itinerant charge carriers of the 2DEG reside in two quantum well subbands penetrating up to 65 Å below the surface. The charge carrier concentration of this 2DEG, and thus the high surface n-type conductivity, emerges from donor-type oxygen vacancies of surface character and proves to be remarkably robust against surface absorbents and contamination. The optical transparency, however, may rely on the presence of ubiquitous surface adsorbed oxygen groups and hydrogen defect states that passivate localized oxygen vacancy states in the bandgap of In₂ O₃ .

The Application of Indium Oxide@CPM-5-C-600 Composite Material Derived from MOF in Cathode Material of Lithium Sulfur Batteries

Due to the “shuttle effect”, the cycle performance of lithium sulfur (Li-S) battery is poor and the capacity decays rapidly. Replacing lithium-ion battery is the maximum problem to be overcome. In order to solve this problem, we use a cage like microporous MOF(CPM-5) as a carbon source, which is carbonized at high temperature to get a micro-mesoporous carbon composite material. In addition, indium oxide particles formed during carbonization are deposited on CPM-5 structure, forming a simple core-shell structure CPM-5-C-600. When it is used as the cathode of Li-S battery, the small molecule sulfide can be confined in the micropores, while the existence of large pore size mesopores can provide a channel for the transmission of lithium ions, so as to improve the conductivity of the material and the rate performance of the battery. After 100 cycles, the specific capacity of the battery can be still maintained at 650 mA h·g⁻¹ and the Coulombic efficiency is close to 100%. When the rate goes up to 2 C, the first discharge capacity not only can reach 1400 mA h·g⁻¹, but also still provides 500 mA h·g⁻¹ after 200 cycles, showing excellent rate performance.

Synergistic Coupling of Photo and Thermal Conditions for Enhancing CO2 Reduction Rates in the Reverse Water Gas Shift Reaction

The photocatalytic activity of nanostructured In₂O_3-x(OH)_y for the reverse water gas shift (RWGS) reaction CO₂ + H₂ → CO + H₂O can be greatly enhanced by substitution of Bi(III) for In(III) in the lattice of Bi_zIn_2-zO_3-x(OH)_y. This behavior was hypothesized as the effect of the population and location of Bi(III) on the Lewis acidity and Lewis basicity of proximal hydroxide and coordinately unsaturated metal surface sites in Bi_zIn_2-zO_3-x(OH)_y acting synergistically as a frustrated Lewis acid-base pair reaction. Nonetheless, such photocatalytic activity is usually optimized in a specific batch reactor setup sequence, with H₂ as an initial gas input under photo and thermal conditions before introducing CO₂. Hence, the chemical interplay between environment parameters such as photoillumination, thermal input, and gas reactant components with the effects of Bi substitution is unclear. Reported herein, glovebox-protected X-ray photoelectron spectroscopy (XPS) interrogates this photochemical RWGS reaction transiting from vacuum state to similar conditions in a photocatalytic reactor, under dark and ambient temperatures, 150°C in dark and 150 °C under photoillumination. Binding energy shifts were used to correlate the material system's Lewis basicity response to these acidic probe gases. In-situ gas electronic sensitivity and in-situ UV-vis-derived band-gap trends confirm the trends shown in the XPS results, hence showing its equivalency with in situ methods. The enhanced photocatalytic reduction rate of CO₂ with H₂ with a low doped 0.05% a.t Bi system is thus associated with an increased gas sensitivity in H₂ + CO₂, a greater expansion in the OH shoulder than that of the undoped system under heat and light conditions, as well as a greater thermal stability of dissociated H adatoms. The photoinduced expansion of the OH shoulder and the increased positive binding energy shifts show the important role of photoillumination over that of thermal conditions. The poor catalytic performance of the high doped system can be attributed to a competing H₂ reduction of In³⁺. The results provide new insight into how pairing photo and thermal conditions with the methodical tuning of the Lewis acidity and Lewis basicity of surface frustrated Lewis acid-base pair sites by varying z amount in Bi_zIn_2-zO_3-x(OH)_y enables optimization of the rate of the photochemical RWGS.

Solution-Processed, Electrolyte-Gated In2O3 Flexible Synaptic Transistors for Brain-Inspired Neuromorphic Applications

Emulating the essential synaptic behaviors using single synaptic transistor has attracted extensive attention for building the brain-inspired neuromorphic systems. However, few reports on synaptic transistors fabricated by solution processes have been reported. In this article, the indium oxide synaptic transistors based on polyimide substrates were fabricated by a nontoxic water-inducement method at a low temperature, and lithium perchlorate (LiClO₄) was dissolved in polyethylene oxide as the gate electrolyte. For water-inducement process, comparable electrical properties of the synaptic transistors can be achieved by prolonging the annealing time rather than high-temperature annealing with a relatively short time. The effect of the annealing time on the electrical performance of the electrolyte-gated transistors annealed at various temperatures was investigated. It is found that the electrolyte-gated-synaptic transistor on polyimide substrate annealed at 200 °C exhibits high electrical performance and good mechanical stability. Due to the ion migration relaxation dynamics in the polymer electrolyte, various important synaptic behaviors such as the excitatory postsynaptic current, paired-pulse facilitation, high-pass filtering characteristics, and long-term memory performance were successfully mimicked. The electrolyte-gated synaptic transistors based on solution-processed In₂O₃ exhibit great potential in neuromorphological applications.

Role of the electronically-active amorphous state in low-temperature processed In2O3 thin-film transistors

Metal oxide (MO) thin-film transistors (TFTs) are expected to enable low-cost flexible and printed electronics, given their excellent charge transport, low processing temperatures and solution processability. However, achieving adequate mobility when processed scalably at low temperatures compatible with plastic electronics is a challenge. Here, we explore process-structure-transport relationships in blade-coated indium oxide (In2O3) TFTs via both sol-gel and combustion chemistries. We find that the sol-gel chemistry enables n-type TFTs when annealed at 200 °C to 225 °C with noticeable electron mobility ((3.4 ± 1.3) cm2V-1s-1) yet minimal In2O3 crystallinity and surprisingly low levels of the metal-oxygen-metal (M-O-M) lattice content (≈46 %). Increased annealing temperatures result in the appearance of nanocrystalline domains and an increase in M-O-M content to ≈70 %, without any further increase in mobility. An actetylacetone combustion-assisted ink lowers the external thermal budget required for In2O3 crystallization but bypasses the electronically-active amorphous state and underperforms the sol-gel ink at low temperatures. Grain boundary formation and nanocrystalline inclusions in these films due to rapid combustion-assisted crystallization are suggested to be the likely origin behind the significantly compromised charge transport at low-temperatures. Overall, this study emphasizes the need to understand the complex interplay between local order (nanocrystallinity) and connectivity (grain boundary, amorphous phases) when optimizing low-temperature processed MO thin films.

Organic-Inorganic Hybrid Materials for Room Temperature Light-Activated Sub-ppm NO Detection

Nitric oxide (NO) is one of the main environmental pollutants and one of the biomarkers noninvasive diagnosis of respiratory diseases. Organic-inorganic hybrids based on heterocyclic Ru (II) complex and nanocrystalline semiconductor oxides SnO2 and In2O3 were studied as sensitive materials for NO detection at room temperature under periodic blue light (λmax = 470 nm) illumination. The semiconductor matrixes were obtained by chemical precipitation with subsequent thermal annealing and characterized by XRD, Raman spectroscopy, and single-point BET methods. The heterocyclic Ru (II) complex was synthesized for the first time and characterized by 1H NMR, 13C NMR, MALDI-TOF mass spectrometry and elemental analysis. The HOMO and LUMO energies of the Ru (II) complex are calculated from cyclic voltammetry data. The thermal stability of hybrids was investigated by thermogravimetric analysis (TGA)-MS analysis. The optical properties of Ru (II) complex, nanocrystalline oxides and hybrids were studied by UV-Vis spectroscopy in transmission and diffuse reflectance modes. DRIFT spectroscopy was performed to investigate the interaction between NO and the surface of the synthesized materials. Sensor measurements demonstrate that hybrid materials are able to detect NO at room temperature in the concentration range of 0.25-4.0 ppm with the detection limit of 69-88 ppb.

X-ray Photospectroscopy and Electronic Studies of Reactor Parameters on Photocatalytic Hydrogenation of Carbon Dioxide by Defect-Laden Indium Oxide Hydroxide Nanorods

In the study reported herein, glovebox-protected X-ray photoelectron spectroscopy (XPS) and in situ Hall charge carrier measurements provide new insights into the surface physical chemistry of gaseous H₂, CO₂, and H₂+CO₂ combined with nanostructured In₂O_(3−x)(OH)_y nanorods, which ensue under photochemical and thermochemical operating conditions. Heterolytic dissociation of H₂ in H₂-only atmosphere appears to occur mainly under dark and ambient temperature conditions, while the greatest amount of OH shoulder expansion in H₂+CO₂ atmosphere appears to mainly occur under photoilluminated conditions. These results correlate with those of the Hall measurements, which show that the prevalence of homolytic over heterolytic dissociation at increasing temperatures leads to a steeper rate of increase in carrier concentrations; and that H₂ adsorption is more prevalent than CO₂ in H₂+CO₂ photoillumination conditions.

Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In2O3

Preparation of rectifying Schottky contacts on n-type oxide semiconductors, such as indium oxide (In₂O₃), is often challenged by the presence of a distinct surface electron accumulation layer. We investigated the material properties and electrical transport characteristics of platinum contact/indium oxide heterojunctions to define routines for the preparation of high-performance Schottky diodes on n-type oxide semiconductors. Combining the evaluation of different Pt deposition methods, such as electron-beam evaporation and (reactive) sputtering in an (O and) Ar atmosphere, with oxygen plasma interface treatments, we identify key parameters to obtain Schottky-type contacts with high electronic barrier height and high rectification ratio. Different photoelectron spectroscopy approaches are compared to characterize the chemical properties of the contact layers and the interface region toward In₂O₃, to analyze charge transfer and plasma oxidation processes as well as to evaluate the precision and limits of different methodologies to determine heterointerface energy barriers. An oxygen-plasma-induced passivation of the semiconductor surface, which induces electron depletion and generates an intrinsic interface energy barrier, is found to be not sufficient to generate rectifying platinum contacts. The dissolution of the functional interface oxide layer within the Pt film results in an energy barrier of ∼0.5 eV, which is too low for an In₂O₃ electron concentration of ∼10¹⁸ cm^-3. A reactive sputter process in an Ar and O atmosphere is required to fabricate rectifying contacts that are composed of platinum oxide (PtO_x). Combining oxygen plasma interface oxidation of the semiconductor surface with reactive sputtering of PtO_x layers results in the generation of a high Schottky barrier of ∼0.9 eV and a rectification ratio of up to 10⁶. An additional oxygen plasma treatment after contact deposition further reduced the reverse leakage current, likely by eliminating a surface conduction path between the coplanar Ohmic and Schottky contacts. We conclude that processes that allow us to increase the oxygen content in the interface and contact region are essential for fabrication of device-quality-rectifying contacts on various oxide semiconductors.

Humidity-Independent Gas Sensors Using Pr-Doped In2O3 Macroporous Spheres: Role of Cyclic Pr3+/Pr4+ Redox Reactions in Suppression of Water-Poisoning Effect

Pure and 3-12 at. % Pr-doped In₂O₃ macroporous spheres were fabricated by ultrasonic spray pyrolysis and their acetone-sensing characteristics under dry and humid conditions were investigated to design humidity-independent gas sensors. The 12 at. % Pr-doped In₂O₃ sensor exhibited approximately the same acetone responses and sensor resistances at 450 °C regardless of the humidity variation, whereas the pure In₂O₃ exhibited significant deterioration in gas-sensing characteristics upon the change in the atmosphere, from dry to humid (relative humidity: 80%). Moreover, the 12 at. % Pr-doped In₂O₃ sensor exhibited a high response to acetone with negligible cross responses to interfering gases (NH₃, CO, benzene, toluene, NO₂, and H₂) under the highly humid atmosphere. The mechanism for the humidity-immune gas-sensing characteristics was investigated by X-ray photoelectron and diffuse reflectance infrared Fourier transform spectroscopies together with the phenomenological gas-sensing results and discussed in relation with Pr³⁺/Pr⁴⁺ redox pairs, regenerative oxygen adsorption, and scavenging of hydroxyl groups.

Effects of UV Irradiation on the Sensing Properties of In2O3 for CO Detection at Low Temperature

In this study, UV irradiation was used to improve the response of indium oxide (In₂O₃) used as a CO sensing material for a resistive sensor operating in a low temperature range, from 25 °C to 150 °C. Different experimental conditions have been compared, varying UV irradiation mode and sensor operating temperature. Results demonstrated that operating the sensor under continuous UV radiation did not improve the response to target gas. The most advantageous condition was obtained when the UV LED irradiated the sensor in regeneration and was turned off during CO detection. In this operating mode, the semiconductor layer showed an apparent "p-type" behavior due to the UV irradiation. Overall, the effect was an improvement of the indium oxide response at 100 °C toward low CO concentrations (from 1 to 10 ppm) that showed higher results than in the dark, which is promising to extend the detection of CO with an In₂O₃-based sensor in the sub-ppm range.

Competition between Depletion Effects and Coupling in the Plasmon Modulation of Doped Metal Oxide Nanocrystals

Degenerately doped semiconductor nanocrystals (NCs) exhibit strong light-matter interactions due to localized surface plasmon resonance (LSPR) in the near- to mid-infrared region. Besides being readily tuned through dopant concentration introduced during synthesis, this LSPR can also be dynamically modulated by applying an external electrochemical potential. This characteristic makes these materials candidates for electrochromic window applications. Here, using prototypical doped indium oxide NCs as a model system, we find that the extent of electrochemical modulation of LSPR frequency is governed by the depletion width and the extent of inter-NC LSPR coupling, which are indirectly controlled by the dopant density, size, and packing density of the NCs. The depletion layer is a near-surface region with a sharply reduced free carrier population that occurs whenever the surface potential lies below the Fermi level. Changes in the depletion width under applied bias substantially control the spectral modulation of the LSPR of individual NCs and also modify the inter-NC LSPR coupling, which additionally modulates the LSPR absorption on the NC film scale. Here, we show that both of these effects must be considered primary factors in determining the extent of LSPR frequency modulation and that the dominant factor depends on NC size. For a constant doping concentration, depletion effects govern LSPR modulation for smaller NCs, while LSPR coupling is prevalent in larger NCs. Consequently, as the size of the NCs is increased while keeping the doping concentration constant, we observe a reversal in the sign of the LSPR frequency modulation from positive to negative.

Boosting Tunable Syngas Formation via Electrochemical CO2 Reduction on Cu/In2O3 Core/Shell Nanoparticles

In this work, monodisperse core/shell Cu/In₂O₃ nanoparticles (NPs) were developed to boost efficient and tunable syngas formation via electrochemical CO₂ reduction for the first time. The efficiency and composition of syngas production on the developed carbon-supported Cu/In₂O₃ catalysts are highly dependent on the In₂O₃ shell thickness (0.4-1.5 nm). As a result, a wide H₂/CO ratio (4/1 to 0.4/1) was achieved on the Cu/In₂O₃ catalysts by controlling the shell thickness and the applied potential (from -0.4 to -0.9 V vs reversible hydrogen electrode), with Faraday efficiency of syngas formation larger than 90%. Specifically, the best-performing Cu/In₂O₃ catalyst demonstrates remarkably large current densities under low overpotentials (4.6 and 12.7 mA/cm² at -0.6 and -0.9 V, respectively), which are competitive with most of the reported systems for syngas formation. Mechanistic discussion implicates that the synergistic effect between lattice compression and Cu doping in the In₂O₃ shell may enhance the binding of *COOH on the Cu/In₂O₃ NP surface, leading to the enhanced CO generation relative to Cu and In₂O₃ catalysts. This report demonstrates a new strategy to realize efficient and tunable syngas formation via rationally designed core/shell catalyst configuration.

Effects of Ag Additive in Low Temperature CO Detection with In₂O₃ Based Gas Sensors

Nanocomposites In₂O₃/Ag obtained by ultraviolet (UV) photoreduction and impregnation methods were studied as materials for CO sensors operating in the temperature range 25–250 °C. Nanocrystalline In₂O₃ and In₂O₃/Ag nanocomposites were characterized by X-ray diffraction (XRD), single-point Brunauer-Emmet-Teller (BET) method, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) with energy dispersive X-ray (EDX) mapping. The active surface sites were investigated using Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance (EPR) spectroscopy and thermo-programmed reduction with hydrogen (TPR-H₂) method. Sensor measurements in the presence of 15 ppm CO demonstrated that UV treatment leads to a complete loss of In₂O₃ sensor sensitivity, while In₂O₃/Ag-UV nanocomposite synthesized by UV photoreduction demonstrates an increased sensor signal to CO at T < 200 °C. The observed high sensor response of the In₂O₃/Ag-UV nanocomposite at room temperature may be due to the realization of an additional mechanism of CO oxidation with participation of surface hydroxyl groups associated via hydrogen bonds.

Large-Area, Ultrathin Metal-Oxide Semiconductor Nanoribbon Arrays Fabricated by Chemical Lift-Off Lithography

Nanoribbon- and nanowire-based field-effect transistors (FETs) have attracted significant attention due to their high surface-to-volume ratios, which make them effective as chemical and biological sensors. However, the conventional nanofabrication of these devices is challenging and costly, posing a major barrier to widespread use. We report a high-throughput approach for producing arrays of ultrathin (∼3 nm) In2O3 nanoribbon FETs at the wafer scale. Uniform films of semiconducting In2O3 were prepared on Si/SiO2 surfaces via a sol-gel process prior to depositing Au/Ti metal layers. Commercially available high-definition digital versatile discs were employed as low-cost, large-area templates to prepare polymeric stamps for chemical lift-off lithography, which selectively removed molecules from self-assembled monolayers functionalizing the outermost Au surfaces. Nanoscale chemical patterns, consisting of one-dimensional lines (200 nm wide and 400 nm pitch) extending over centimeter length scales, were etched into the metal layers using the remaining monolayer regions as resists. Subsequent etch processes transferred the patterns into the underlying In2O3 films before the removal of the protective organic and metal coatings, revealing large-area nanoribbon arrays. We employed nanoribbons in semiconducting FET channels, achieving current on-to-off ratios over 107 and carrier mobilities up to 13.7 cm2 V-1 s-1. Nanofabricated structures, such as In2O3 nanoribbons and others, will be useful in nanoelectronics and biosensors. The technique demonstrated here will enable these applications and expand low-cost, large-area patterning strategies to enable a variety of materials and design geometries in nanoelectronics.