1
|
Zhu W, Sun J, Wang Y, Li Y, Bai H, Wang Q, Han L, Zhang Q, Wu H, Song C, Pan F. Room-Temperature Magneto-Photoresponse in All-2D Optoelectronic Devices for In-Sensor Vision Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403624. [PMID: 39129355 DOI: 10.1002/adma.202403624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 07/22/2024] [Indexed: 08/13/2024]
Abstract
Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto-photoresponse. It enriches the application scenarios and shows potential to construct in-sensor vision systems for artificial intelligence with gate-free architecture. However, achieving a simultaneous existence of room-temperature magnetism and notable photoelectric properties in semiconductors is a great challenge. Here, the room-temperature magneto-photoresponse is accomplished in all-2D optoelectronic devices, employing 2D ferromagnet Fe3GaTe2 as the source and drain, with WSe2 forming the channel. The interplay between room-temperature magnetism and photoelectric properties is realized by introducing the unique magneto-band structure effect from 2D interface, resulting in magneto-tunable charge transfer between Fe3GaTe2 and WSe2. The photocurrent in this 2D optoelectronic device exhibits robust response to both the direction and amplitude of external magnetic fields. Utilizing constructed 2D optoelectronic devices with magneto-photoresponse, traditional gate-controlled phototransistors are replaced and a prototype in-sensor vision system with visual adaptation, significantly improving the recognition accuracy to over four times in low-contrast environments is established. These findings pave a way for achieving high-temperature magneto-photoresponse, thereby guiding the construction of robust in-sensor vision systems toward high performance and broad applications.
Collapse
Affiliation(s)
- Wenxuan Zhu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Jiacheng Sun
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Yuyan Wang
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Yuankun Li
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Hua Bai
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Qingtian Zhang
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Huaqiang Wu
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, P. R. China
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| |
Collapse
|
2
|
Dang J, Wu T, Yan S, Watanabe K, Taniguchi T, Lei H, Zhang XX. Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI 3/hBN/WSe 2 heterostructure. Nat Commun 2024; 15:6799. [PMID: 39122744 PMCID: PMC11316065 DOI: 10.1038/s41467-024-51287-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Accepted: 08/05/2024] [Indexed: 08/12/2024] Open
Abstract
Spin-polarized light-emitting diodes (spin-LEDs) convert the electronic spin information to photon circular polarization, offering potential applications including spin amplification, optical communications, and advanced imaging. The conventional control of the emitted light's circular polarization requires a change in the external magnetic field, limiting the operation conditions of spin-LEDs. Here, we demonstrate an atomically thin spin-LED device based on a heterostructure of a monolayer WSe2 and a few-layer antiferromagnetic CrI3, separated by a thin hBN tunneling barrier. The CrI3 and hBN layers polarize the spin of the injected carriers into the WSe2. With the valley optical selection rule in the monolayer WSe2, the electroluminescence exhibits a high degree of circular polarization that follows the CrI3 magnetic states. Importantly, we show an efficient electrical tuning, including a sign reversal, of the electroluminescent circular polarization by applying an electrostatic field due to the electrical tunability of the few-layer CrI3 magnetization. Our results establish a platform to achieve on-demand operation of nanoscale spin-LED and electrical control of helicity for device applications.
Collapse
Affiliation(s)
- Jianchen Dang
- Department of Physics, University of Florida, Gainesville, FL, USA
| | - Tongyao Wu
- Department of Physics, University of Florida, Gainesville, FL, USA
| | - Shuohua Yan
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, 100872, Beijing, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, 100872, Beijing, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan
| | - Hechang Lei
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, 100872, Beijing, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, 100872, Beijing, China
| | - Xiao-Xiao Zhang
- Department of Physics, University of Florida, Gainesville, FL, USA.
| |
Collapse
|
3
|
Namdari R, Seidi S, Namdari MR. Magnetic field assisted centrifugal acceleration thin-layer chromatography: An approach to investigate the magnetic field effects on separation parameters including retention factor difference, selectivity factor, and resolution. J Chromatogr A 2024; 1726:464972. [PMID: 38744184 DOI: 10.1016/j.chroma.2024.464972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2024] [Revised: 05/02/2024] [Accepted: 05/06/2024] [Indexed: 05/16/2024]
Abstract
The effect of internal and external magnetic fields on the separation of antifungal drugs by centrifugal acceleration thin-layer chromatography was reported for the first time. External and internal magnetic fields were applied using neodymium magnets and CoFe2O4@SiO2 ferromagnetic nanoparticles. Separation of ketoconazole and clotrimazole was performed using a mobile phase consisting of n-hexane, ethyl acetate, ethanol, and ammonia (2.0:2.0:0.5:0.2, v/v). The influence of the magnetic field on the entire chromatographic system led to changes in the properties of the stationary and mobile phases and the analytes affecting the retention factor, shape, and width of the separated rings. The extent of this impact depended on the structure of the analyte and the type and intensity of the magnetic field. In the presence of the external magnetic field, there were more significant changes in the chromatographic parameters of the drugs, especially the width of the separated rings, and ketoconazole was more affected than clotrimazole. The changes are conceivably due to the effect of the magnetic field on the analyte distribution between the stationary and mobile phases, which is also caused by the possibility of the magnetic field affecting the viscosity, surface tension, and surface free energy between the stationary and mobile phases.
Collapse
Affiliation(s)
- Reyhaneh Namdari
- Department of Analytical Chemistry, Faculty of Chemistry, K.N. Toosi University of Technology, P.O. Box 16315-1618, Postal Code 15418-49611, Tehran, Iran; Nanomaterial, Separation and Trace Analysis Research Lab, K.N. Toosi University of Technology, P.O. Box 16315-1618, Postal Code 15418-49611, Tehran, Iran
| | - Shahram Seidi
- Department of Analytical Chemistry, Faculty of Chemistry, K.N. Toosi University of Technology, P.O. Box 16315-1618, Postal Code 15418-49611, Tehran, Iran; Nanomaterial, Separation and Trace Analysis Research Lab, K.N. Toosi University of Technology, P.O. Box 16315-1618, Postal Code 15418-49611, Tehran, Iran.
| | - Mohammad Reza Namdari
- Department of Mechanical Engineering, Hakim Sabzevari University, P.O. Box 397, Postal Code 9618676115, Sabzevar, Iran
| |
Collapse
|
4
|
Yang B, Patel T, Cheng M, Pichugin K, Tian L, Sherlekar N, Yan S, Fu Y, Tian S, Lei H, Reimer ME, Okamoto J, Tsen AW. Macroscopic tunneling probe of Moiré spin textures in twisted CrI 3. Nat Commun 2024; 15:4982. [PMID: 38862504 PMCID: PMC11167019 DOI: 10.1038/s41467-024-49261-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2024] [Accepted: 05/30/2024] [Indexed: 06/13/2024] Open
Abstract
Various noncollinear spin textures and magnetic phases have been predicted in twisted two-dimensional CrI3 due to competing ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange from moiré stacking-with potential spintronic applications even when the underlying material possesses a negligible Dzyaloshinskii-Moriya or dipole-dipole interaction. Recent measurements have shown evidence of coexisting FM and AFM layer order in small-twist-angle CrI3 bilayers and double bilayers. Yet, the nature of the magnetic textures remains unresolved and possibilities for their manipulation and electrical readout are unexplored. Here, we use tunneling magnetoresistance to investigate the collective spin states of twisted double-bilayer CrI3 under both out-of-plane and in-plane magnetic fields together with detailed micromagnetic simulations of domain dynamics based on magnetic circular dichroism. Our results capture hysteretic and anisotropic field evolutions of the magnetic states and we further uncover two distinct non-volatile spin textures (out-of-plane and in-plane domains) at ≈1° twist angle, with a different global tunneling resistance that can be switched by magnetic field.
Collapse
Affiliation(s)
- Bowen Yang
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Physics and Astronomy, University of Waterloo, Waterloo, ON, Canada
| | - Tarun Patel
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Physics and Astronomy, University of Waterloo, Waterloo, ON, Canada
| | - Meixin Cheng
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Chemistry, University of Waterloo, Waterloo, ON, Canada
| | | | - Lin Tian
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Canada
| | - Nachiket Sherlekar
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Physics and Astronomy, University of Waterloo, Waterloo, ON, Canada
| | - Shaohua Yan
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, China
| | - Yang Fu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, China
| | - Shangjie Tian
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, China
- School of Materials Science and Engineering, Anhui University, Hefei, China
| | - Hechang Lei
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, China
| | - Michael E Reimer
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Canada
| | - Junichi Okamoto
- Institute of Physics, University of Freiburg, Freiburg, Germany
- EUCOR Centre for Quantum Science and Quantum Computing, University of Freiburg, Freiburg, Germany
| | - Adam W Tsen
- Institute for Quantum Computing, University of Waterloo, Waterloo, ON, Canada.
- Department of Chemistry, University of Waterloo, Waterloo, ON, Canada.
| |
Collapse
|
5
|
Luo W, Song R, Whetten BG, Huang D, Cheng X, Belyanin A, Jiang T, Raschke MB. Nonlinear Nano-Imaging of Interlayer Coupling in 2D Graphene-Semiconductor Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307345. [PMID: 38279570 DOI: 10.1002/smll.202307345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 12/13/2023] [Indexed: 01/28/2024]
Abstract
The emergent electronic, spin, and other quantum properties of 2D heterostructures of graphene and transition metal dichalcogenides are controlled by the underlying interlayer coupling and associated charge and energy transfer dynamics. However, these processes are sensitive to interlayer distance and crystallographic orientation, which are in turn affected by defects, grain boundaries, or other nanoscale heterogeneities. This obfuscates the distinction between interlayer charge and energy transfer. Here, nanoscale imaging in coherent four-wave mixing (FWM) and incoherent two-photon photoluminescence (2PPL) is combined with a tip distance-dependent coupled rate equation model to resolve the underlying intra- and inter-layer dynamics while avoiding the influence of structural heterogeneities in mono- to multi-layer graphene/WSe2 heterostructures. With selective insertion of hBN spacer layers, it is shown that energy, as opposed to charge transfer, dominates the interlayer-coupled optical response. From the distinct nano-FWM and -2PPL tip-sample distance-dependent modification of interlayer and intralayer relaxation by tip-induced enhancement and quenching, an interlayer energy transfer time ofτ ET ≈ ( 0 . 35 - 0.15 + 0.65 ) $\tau _{\rm ET} \approx (0.35^{+0.65}_{-0.15})$ ps consistent with recent reports is derived. As a local probe technique, this approach highlights the ability to determine intrinsic sample properties even in the presence of large sample heterogeneity.
Collapse
Affiliation(s)
- Wenjin Luo
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Renkang Song
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Benjamin G Whetten
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Di Huang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Xinbin Cheng
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Alexey Belyanin
- Department of Physics and Astronomy, Texas A&M University, College Station, TX, 77843, USA
| | - Tao Jiang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering and School of Physics Science and Engineering Tongji University, Shanghai, 200092, China
| | - Markus B Raschke
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| |
Collapse
|
6
|
Wu W, Liu M, Zhou J, Li J, Zhang Y, Xu F, Li X, Wu Y, Wu Z, Kang J. Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer. NANO LETTERS 2024; 24:6225-6232. [PMID: 38752702 DOI: 10.1021/acs.nanolett.4c00503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Magnetic proximity interaction provides a promising route to manipulate the spin and valley degrees of freedom in van der Waals heterostructures. Here, we report a control of valley pseudospin in the WS2/MoSe2 heterostructure by utilizing the magnetic proximity effect of few-layered CrBr3 and, for the first time, observe a substantial difference in valley polarization of intra/interlayer excitons under different circularly polarized laser excitations, referred to as chirality-dependent valley polarization. Theoretical and experimental results reveal that the spin-selective charge transfer between MoSe2 and CrBr3, as well as between MoSe2 and WS2, is mostly responsible for the chiral feature of valley polarization in comparison with the proximity exchange field. This means that a long-distance manipulation of exciton behaviors in multilayer heterostructures can be achieved through spin-selective charge transfer. This work marks a significant advancement in the control of spin and valley pseudospin in multilayer structures.
Collapse
Affiliation(s)
- Wei Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Mengyu Liu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Jiangpeng Zhou
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Jin'an Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yuxiang Zhang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Feiya Xu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Xu Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yaping Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zhiming Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Junyong Kang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| |
Collapse
|
7
|
Wu Q, Wang J, Zhi T, Zhuang Y, Tao Z, Shao P, Cai Q, Yang G, Xue J, Chen D, Zhang R. Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures. NANOTECHNOLOGY 2024; 35:305204. [PMID: 38604152 DOI: 10.1088/1361-6528/ad3d64] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Accepted: 04/09/2024] [Indexed: 04/13/2024]
Abstract
The pursuit of van der Waals (vdW) heterostructures with high Curie temperature and strong perpendicular magnetic anisotropy (PMA) is vital to the advancement of next generation spintronic devices. First-principles calculations are used to study the electronic structures and magnetic characteristics of GaN/VS2vdW heterostructure under biaxial strain and electrostatic doping. Our findings show that a ferromagnetic ground state with a remarkable Curie temperature (477 K), much above room temperature, exists in GaN/VS2vdW heterostructure and 100% spin polarization efficiency. Additionally, GaN/VS2vdW heterostructure still maintains PMA under biaxial strain, which is indispensable for high-density information storage. We further explore the electron, magnetic, and transport properties of VS2/GaN/VS2vdW sandwich heterostructure, where the magnetoresistivity can reach as high as 40%. Our research indicates that the heterostructure constructed by combining the ferromagnet VS2and the non-magnetic semiconductor GaN is a promising material for vdW spin valve devices at room temperature.
Collapse
Affiliation(s)
- Qianqian Wu
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Jin Wang
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Ting Zhi
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Yanling Zhuang
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Zhikuo Tao
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Pengfei Shao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Qing Cai
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Guofeng Yang
- School of Science, Jiangnan University, Wuxi, 214122, People's Republic of China
| | - Junjun Xue
- College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| |
Collapse
|
8
|
Ortiz Jimenez V, Pham YTH, Zhou D, Liu M, Nugera FA, Kalappattil V, Eggers T, Hoang K, Duong DL, Terrones M, Rodriguez Gutiérrez H, Phan M. Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2304792. [PMID: 38072638 PMCID: PMC10870067 DOI: 10.1002/advs.202304792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 11/04/2023] [Indexed: 02/17/2024]
Abstract
The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.
Collapse
Affiliation(s)
- Valery Ortiz Jimenez
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
- Nanoscale Device Characterization DivisionNational Institute of Standards and TechnologyGaithersburgMD20899USA
| | | | - Da Zhou
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Mingzu Liu
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | | | - Tatiana Eggers
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
| | - Khang Hoang
- Center for Computationally Assisted Science and Technology and Department of PhysicsNorth Dakota State UniversityFargoND58108USA
| | - Dinh Loc Duong
- Department of PhysicsMontana State UniversityBozemanMT59717USA
| | - Mauricio Terrones
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | - Manh‐Huong Phan
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
| |
Collapse
|
9
|
Wu H, Yang L, Zhang G, Jin W, Xiao B, Zhang W, Chang H. Robust Magnetic Proximity Induced Anomalous Hall Effect in a Room Temperature van der Waals Ferromagnetic Semiconductor Based 2D Heterostructure. SMALL METHODS 2024:e2301524. [PMID: 38295050 DOI: 10.1002/smtd.202301524] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Revised: 01/04/2024] [Indexed: 02/02/2024]
Abstract
Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with 2D topological semimetals are pivotal for advancing next-generation spintronic and quantum devices. However, most van der Waals ferromagnetic semiconductors exhibit ferromagnetism only at low temperatures, limiting the proximity research on their interfaces with topological semimetals. Here, an intrinsic, van der Waals layered room-temperature ferromagnetic semiconductor crystal, FeCr0.5 Ga1.5 Se4 (FCGS), is reported with a Curie temperature (TC ) as high as 370 K, setting a new record for van der Waals ferromagnetic semiconductors. The saturation magnetization at low temperature (2 K) and room temperature (300 K) reaches 8.2 and 2.7 emu g-1 , respectively. Furthermore, FCGS possesses a bandgap of ≈1.2 eV, which is comparable to the widely used commercial silicon. The FCGS/graphene 2D heterostructure exhibits an impeccably smooth and gapless interface, thereby inducing a robust van der Waals magnetic proximity coupling effect between FCGS and graphene. After the proximity coupling, graphene undergoes a charge carrier transition from electrons to holes, accompanied by a transition from non-magnetic to ferromagnetic transport behavior with robust anomalous Hall effect (AHE). Notably, the van der Waals magnetic proximity-induced AHE remains robust even up to 400 K.
Collapse
Affiliation(s)
- Hao Wu
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Li Yang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Gaojie Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Wen Jin
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Bichen Xiao
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Wenfeng Zhang
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| |
Collapse
|
10
|
Hu J, Yu F, Luo A, Pan XH, Zou J, Liu X, Xu G. Chiral Topological Superconductivity in Superconductor-Obstructed Atomic Insulator-Ferromagnetic Insulator Heterostructures. PHYSICAL REVIEW LETTERS 2024; 132:036601. [PMID: 38307042 DOI: 10.1103/physrevlett.132.036601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2023] [Accepted: 12/08/2023] [Indexed: 02/04/2024]
Abstract
Implementing topological superconductivity (TSC) and Majorana states (MSs) is one of the most significant and challenging tasks in both fundamental physics and topological quantum computations. In this work, taking the obstructed atomic insulator (OAI) Nb_{3}Br_{8}, s-wave superconductor (SC) NbSe_{2}, and ferromagnetic insulator (FMI) CrI_{3} as an example, we propose a new setup to realize the 2D chiral TSC and MSs in the SC/OAI/FMI heterostructure, which could avoid the subband problem effectively and has the advantage of huge Rashba spin-orbit coupling. As a result, the TSC phase can be stabilized in a wide region of chemical potential and Zeeman splitting, and four distinct TSC phases with superconducting Chern number N=-1,-2,-3, 3 can be achieved. Moreover, a 2D Bogoliubov-de Gennes Hamiltonian based on the triangular lattice of obstructed Wannier charge centers, combined with the s-wave superconductivity paring and Zeeman splitting, is constructed to understand the whole topological phase diagram analytically. These results expand the application of OAIs and pave a new way to realize the TSC and MSs with unique advantages.
Collapse
Affiliation(s)
- Jingnan Hu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Fei Yu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Aiyun Luo
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiao-Hong Pan
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jinyu Zou
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xin Liu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Gang Xu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| |
Collapse
|
11
|
Zhang H, Liu Q, Deng L, Ma Y, Daneshmandi S, Cen C, Zhang C, Voyles PM, Jiang X, Zhao J, Chu CW, Gai Z, Li L. Room-Temperature Ferromagnetism in Epitaxial Bilayer FeSb/SrTiO 3(001) Terminated with a Kagome Lattice. NANO LETTERS 2024; 24:122-129. [PMID: 37913524 PMCID: PMC10786153 DOI: 10.1021/acs.nanolett.3c03415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 10/17/2023] [Accepted: 10/18/2023] [Indexed: 11/03/2023]
Abstract
Two-dimensional (2D) magnets exhibit unique physical properties for potential applications in spintronics. To date, most 2D ferromagnets are obtained by mechanical exfoliation of bulk materials with van der Waals interlayer interactions, and the synthesis of single- or few-layer 2D ferromagnets with strong interlayer coupling remains experimentally challenging. Here, we report the epitaxial growth of 2D non-van der Waals ferromagnetic bilayer FeSb on SrTiO3(001) substrates stabilized by strong coupling to the substrate, which exhibits in-plane magnetic anisotropy and a Curie temperature above 390 K. In situ low-temperature scanning tunneling microscopy/spectroscopy and density-functional theory calculations further reveal that an Fe Kagome layer terminates the bilayer FeSb. Our results open a new avenue for further exploring emergent quantum phenomena from the interplay of ferromagnetism and topology for application in spintronics.
Collapse
Affiliation(s)
- Huimin Zhang
- Department
of Physics and Astronomy, West Virginia
University, Morgantown, West Virginia 26506, United States
- State
Key Laboratory of Structural Analysis, Optimization and CAE Software
for Industrial Equipment, Dalian University
of Technology, Dalian, 116024, China
| | - Qinxi Liu
- Key
Laboratory of Materials Modification by Laser, Ion and Electron Beams
(Dalian University of Technology), Ministry
of Education, Dalian 116024, China
| | - Liangzi Deng
- Department
of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas, 77204, United States
| | - Yanjun Ma
- Department
of Physics and Astronomy, West Virginia
University, Morgantown, West Virginia 26506, United States
| | - Samira Daneshmandi
- Department
of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas, 77204, United States
| | - Cheng Cen
- Department
of Physics and Astronomy, West Virginia
University, Morgantown, West Virginia 26506, United States
- Beijing National
Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Chenyu Zhang
- Department
of Materials Science and Engineering, University
of Wisconsin−Madison, Madison, Wisconsin 53706, United States
| | - Paul M. Voyles
- Department
of Materials Science and Engineering, University
of Wisconsin−Madison, Madison, Wisconsin 53706, United States
| | - Xue Jiang
- State
Key Laboratory of Structural Analysis, Optimization and CAE Software
for Industrial Equipment, Dalian University
of Technology, Dalian, 116024, China
- Key
Laboratory of Materials Modification by Laser, Ion and Electron Beams
(Dalian University of Technology), Ministry
of Education, Dalian 116024, China
| | - Jijun Zhao
- State
Key Laboratory of Structural Analysis, Optimization and CAE Software
for Industrial Equipment, Dalian University
of Technology, Dalian, 116024, China
- Key
Laboratory of Materials Modification by Laser, Ion and Electron Beams
(Dalian University of Technology), Ministry
of Education, Dalian 116024, China
| | - Ching-Wu Chu
- Department
of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas, 77204, United States
| | - Zheng Gai
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee, 37831 United States
| | - Lian Li
- Department
of Physics and Astronomy, West Virginia
University, Morgantown, West Virginia 26506, United States
| |
Collapse
|
12
|
Gong R, Du X, Janzen E, Liu V, Liu Z, He G, Ye B, Li T, Yao NY, Edgar JH, Henriksen EA, Zu C. Isotope engineering for spin defects in van der Waals materials. Nat Commun 2024; 15:104. [PMID: 38168074 PMCID: PMC10761865 DOI: 10.1038/s41467-023-44494-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Accepted: 12/14/2023] [Indexed: 01/05/2024] Open
Abstract
Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ([Formula: see text]) in hexagonal boron nitride (hBN), we grow isotopically purified h10B15N crystals. Compared to [Formula: see text] in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded [Formula: see text] spin transitions as well as extended coherence time T2 and relaxation time T1. For quantum sensing, [Formula: see text] centers in our h10B15N samples exhibit a factor of 4 (2) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the [Formula: see text] hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor 15N nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.
Collapse
Affiliation(s)
- Ruotian Gong
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Xinyi Du
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Eli Janzen
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Vincent Liu
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Zhongyuan Liu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Guanghui He
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Bingtian Ye
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Norman Y Yao
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - James H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Erik A Henriksen
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA
| | - Chong Zu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA.
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
| |
Collapse
|
13
|
Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
Collapse
Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
14
|
Ma X, Fan Y, Li W, Li Y, Liu X, Zhao X, Zhao M. Valley manipulation by sliding-induced tuning of the magnetic proximity effect in heterostructures. NANOSCALE 2023; 15:18678-18686. [PMID: 37933460 DOI: 10.1039/d3nr03086e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2023]
Abstract
Spontaneous valley polarization, resulting from the magnetic proximity effect, holds tremendous potential for information processing and storage. This effect is highly sensitive to the interfacial electronic properties, encompassing both charge transitions and spin configurations. In this study, we propose the manipulation of valley splitting by leveraging the tunable magnetic proximity effect through sliding an inversion-symmetric antiferromagnetic (AFM-I) monolayer within a TMD/AFM-I/TMD heterostructure. The presence of the antiferromagnetic monolayer enhances the robustness of the magnetic order during interlayer sliding. Notably, we demonstrate that the polarized stacking of the heterostructure enables the generation of intrinsic out-of-plane and in-plane electric polarization. Intriguingly, interlayer sliding not only reverses the out-of-plane and in-plane electric polarization but also alters the layer-resolved valley splitting, thereby contributing to the emergence of the anomalous valley Hall effect and the layer Hall effect. In addition, the manipulation of valleys remains consistent with both the valley optical selection rules and the intra/interlayer emission energy, which are contingent upon the interlayer sliding. The findings of this work hold promise for potential applications in the field of valleytronics.
Collapse
Affiliation(s)
- Xikui Ma
- Center for Optics Research and Engineering of Shandong University, Shandong University, Qingdao, 266237, China.
| | - Yingcai Fan
- School of Physics, Shandong University, Jinan, Shandong, 250100, China.
| | - Weifeng Li
- School of Physics, Shandong University, Jinan, Shandong, 250100, China.
| | - Yangyang Li
- School of Physics, Shandong University, Jinan, Shandong, 250100, China.
| | - Xiangdong Liu
- School of Physics, Shandong University, Jinan, Shandong, 250100, China.
| | - Xian Zhao
- Center for Optics Research and Engineering of Shandong University, Shandong University, Qingdao, 266237, China.
| | - Mingwen Zhao
- School of Physics, Shandong University, Jinan, Shandong, 250100, China.
| |
Collapse
|
15
|
Serati de Brito C, Faria Junior PE, Ghiasi TS, Ingla-Aynés J, Rabahi CR, Cavalini C, Dirnberger F, Mañas-Valero S, Watanabe K, Taniguchi T, Zollner K, Fabian J, Schüller C, van der Zant HSJ, Gobato YG. Charge Transfer and Asymmetric Coupling of MoSe 2 Valleys to the Magnetic Order of CrSBr. NANO LETTERS 2023. [PMID: 38019289 DOI: 10.1021/acs.nanolett.3c03431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in nonmagnetic TMDs. Here, we report magneto photoluminescence (PL) investigations of monolayer (ML) MoSe2 on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe2, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley g-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first-principles calculations suggest that MoSe2/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices.
Collapse
Affiliation(s)
- Caique Serati de Brito
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
| | - Paulo E Faria Junior
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Talieh S Ghiasi
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Josep Ingla-Aynés
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - César Ricardo Rabahi
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
| | - Camila Cavalini
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
| | - Florian Dirnberger
- Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität, 01069 Dresden, Germany
| | - Samuel Mañas-Valero
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Kenji Watanabe
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Klaus Zollner
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Christian Schüller
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
| | - Herre S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Yara Galvão Gobato
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
| |
Collapse
|
16
|
Strasdas J, Pestka B, Rybak M, Budniak AK, Leuth N, Boban H, Feyer V, Cojocariu I, Baranowski D, Avila J, Dudin P, Bostwick A, Jozwiak C, Rotenberg E, Autieri C, Amouyal Y, Plucinski L, Lifshitz E, Birowska M, Morgenstern M. Electronic Band Structure Changes across the Antiferromagnetic Phase Transition of Exfoliated MnPS 3 Flakes Probed by μ-ARPES. NANO LETTERS 2023; 23:10342-10349. [PMID: 37922394 DOI: 10.1021/acs.nanolett.3c02906] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2023]
Abstract
Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, presumably due to their photochemical sensitivity. Here, we provide micrometer-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS3 above and below the Néel temperature down to one monolayer. Favorable comparison with density functional theory calculations enables identifying the orbital character of the observed bands. Consistently, we find pronounced changes across the Néel temperature for bands consisting of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films, demonstrating the predominant 2D character of MnPS3. The novel access is transferable to other MPX3 materials (M: transition metal, P: phosphorus, X: chalcogenide), providing several antiferromagnetic arrangements.
Collapse
Affiliation(s)
- Jeff Strasdas
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
| | - Benjamin Pestka
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
| | - Miłosz Rybak
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, WybrzeŻe Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Adam K Budniak
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Niklas Leuth
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
| | - Honey Boban
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Vitaliy Feyer
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Iulia Cojocariu
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Daniel Baranowski
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - José Avila
- Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, Gif sur Yvette, Paris F91192, France
| | - Pavel Dudin
- Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, Gif sur Yvette, Paris F91192, France
| | - Aaron Bostwick
- Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States
| | - Chris Jozwiak
- Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States
| | - Carmine Autieri
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Yaron Amouyal
- Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Lukasz Plucinski
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, Jülich 52428, Germany
| | - Efrat Lifshitz
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute and Helen Diller Quantum Center, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Magdalena Birowska
- Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Pasteura St. 5, 02-093 Warsaw, Poland
| | - Markus Morgenstern
- II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52074 Aachen, Germany
| |
Collapse
|
17
|
Li X, Jones AC, Choi J, Zhao H, Chandrasekaran V, Pettes MT, Piryatinski A, Tschudin MA, Reiser P, Broadway DA, Maletinsky P, Sinitsyn N, Crooker SA, Htoon H. Proximity-induced chiral quantum light generation in strain-engineered WSe 2/NiPS 3 heterostructures. NATURE MATERIALS 2023; 22:1311-1316. [PMID: 37592028 DOI: 10.1038/s41563-023-01645-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Accepted: 07/18/2023] [Indexed: 08/19/2023]
Abstract
Quantum light emitters capable of generating single photons with circular polarization and non-classical statistics could enable non-reciprocal single-photon devices and deterministic spin-photon interfaces for quantum networks. To date, the emission of such chiral quantum light relies on the application of intense external magnetic fields, electrical/optical injection of spin-polarized carriers/excitons or coupling with complex photonic metastructures. Here we report the creation of free-space chiral quantum light emitters via the nanoindentation of monolayer WSe2/NiPS3 heterostructures at zero external magnetic field. These quantum light emitters emit with a high degree of circular polarization (0.89) and single-photon purity (95%), independent of pump laser polarization. Scanning diamond nitrogen-vacancy microscopy and temperature-dependent magneto-photoluminescence studies reveal that the chiral quantum light emission arises from magnetic proximity interactions between localized excitons in the WSe2 monolayer and the out-of-plane magnetization of defects in the antiferromagnetic order of NiPS3, both of which are co-localized by strain fields associated with the nanoscale indentations.
Collapse
Affiliation(s)
- Xiangzhi Li
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Andrew C Jones
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Junho Choi
- National High Magnetic Field Laboratory, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Huan Zhao
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Vigneshwaran Chandrasekaran
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Michael T Pettes
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Andrei Piryatinski
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | | | - Patrick Reiser
- Department of Physics, University of Basel, Basel, Switzerland
| | | | | | - Nikolai Sinitsyn
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Scott A Crooker
- National High Magnetic Field Laboratory, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA.
| |
Collapse
|
18
|
Ren H, Lan M. Progress and Prospects in Metallic Fe xGeTe 2 (3 ≤ x ≤ 7) Ferromagnets. Molecules 2023; 28:7244. [PMID: 37959664 PMCID: PMC10649090 DOI: 10.3390/molecules28217244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 10/05/2023] [Accepted: 10/21/2023] [Indexed: 11/15/2023] Open
Abstract
Thermal fluctuations in two-dimensional (2D) isotropy systems at non-zero finite temperatures can destroy the long-range (LR) magnetic order due to the mechanisms addressed in the Mermin-Wanger theory. However, the magnetic anisotropy related to spin-orbit coupling (SOC) may stabilize magnetic order in 2D systems. Very recently, 2D FexGeTe2 (3 ≤ x ≤ 7) with a high Curie temperature (TC) has not only undergone significant developments in terms of synthetic methods and the control of ferromagnetism (FM), but is also being actively explored for applications in various devices. In this review, we introduce six experimental methods, ten ferromagnetic modulation strategies, and four spintronic devices for 2D FexGeTe2 materials. In summary, we outline the challenges and potential research directions in this field.
Collapse
Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Liaocheng 252000, China
| | - Mu Lan
- College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu 610225, China
| |
Collapse
|
19
|
Kim D, Pandey J, Jeong J, Cho W, Lee S, Cho S, Yang H. Phase Engineering of 2D Materials. Chem Rev 2023; 123:11230-11268. [PMID: 37589590 DOI: 10.1021/acs.chemrev.3c00132] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.
Collapse
Affiliation(s)
- Dohyun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juhi Pandey
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juyeong Jeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Woohyun Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungyeon Lee
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Suyeon Cho
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| |
Collapse
|
20
|
Cham TMJ, Dorrian RJ, Zhang XS, Dismukes AH, Chica DG, May AF, Roy X, Muller DA, Ralph DC, Luo YK. Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field-Free Spin-Orbit-Torque Switching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305739. [PMID: 37800466 DOI: 10.1002/adma.202305739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 09/06/2023] [Indexed: 10/07/2023]
Abstract
Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3 GeTe2 (FGT) are reported. The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non-zero exchange bias at 30 K.
Collapse
Affiliation(s)
| | | | | | - Avalon H Dismukes
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Daniel G Chica
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Andrew F May
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - David A Muller
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
| | - Daniel C Ralph
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
| | - Yunqiu Kelly Luo
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
- Department of Physics and Astronomy, University of Southern California, Los Angeles, CA, 90089, USA
| |
Collapse
|
21
|
Zhao Q, Zhu Y, Zhang H, Jiang B, Wang Y, Xie T, Lou K, Xia C, Yang H, Bi C. Proximity-Induced Interfacial Room-Temperature Ferromagnetism in Semiconducting Fe 3GeTe 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46520-46526. [PMID: 37738105 DOI: 10.1021/acsami.3c09932] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/24/2023]
Abstract
The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices, but with an acknowledged challenge that the Curie temperature (Tc) is usually far below room temperature. Many efforts such as voltage control and magnetic ion doping are currently underway to enhance the functional temperature, in which the involvement of additional electrodes or extra magnetic ions limits their application in practical devices. Here we demonstrate that the magnetic proximity, a robust effect but with elusive mechanisms, can induce room-temperature ferromagnetism at the interface between sputtered Pt and semiconducting Fe3GeTe2, both of which do not show ferromagnetism at 300 K. The independent electrical and magnetization measurements, structure analysis, and control samples with Ta highlighting the role of Pt confirm that the ferromagnetism with the Tc of above 400 K arises from the Fe3GeTe2/Pt interfaces, rather than Fe aggregation or other artificial effects. Moreover, contrary to conventional ferromagnet/Pt structures, the spin current generated by the Pt layer is enhanced more than two times at the Fe3GeTe2/Pt interfaces, indicating the potential applications of the unique proximity effect in building highly efficient spintronic devices. These results may pave a new avenue to create room-temperature functional spin devices based on low-Tc materials and provide clear evidence of magnetic proximity effects by using nonferromagnetic materials.
Collapse
Affiliation(s)
- Qianwen Zhao
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yingmei Zhu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Hanying Zhang
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Baiqing Jiang
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuan Wang
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tunan Xie
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kaihua Lou
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - ChaoChao Xia
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Hongxin Yang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Chong Bi
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| |
Collapse
|
22
|
Zhang Y, Zhang J, Yang W, Zhang H, Jia J. Engineering topological states in a two-dimensional honeycomb lattice. Phys Chem Chem Phys 2023; 25:25398-25407. [PMID: 37705503 DOI: 10.1039/d3cp03507g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
In this work, we use first-principles calculations to determine the interplay between spin-orbit coupling (SOC) and magnetism which can not only generate a quantum anomalous Hall state but can also result in topologically trivial states although some honeycomb systems host large band gaps. By employing tight-binding model analysis, we have summarized two types of topologically trivial states: one is due to the coexistence of quadratic non-Dirac and linear Dirac bands in the same spin channel that act together destructively in magnetic materials (such as, CrBr3, CrCl3, and VBr3 monolayers); the other one is caused by the destructive coupling effect between two different spin channels due to small magnetic spin splitting in heavy-metal-based materials, such as, BaTe(111)-supported plumbene. Further investigations reveal that topologically nontrivial states can be realized by removing the Dirac band dispersion of the magnetic monolayers for the former case (such as in alkali metal doped CrBr3), while separating the two different spin channels from each other by enhancing the magnetic spin splitting for the latter case (such as in half-iodinated silicene). Thus, our work provides a theoretical guideline to manipulate the topological states in a two-dimensional honeycomb lattice.
Collapse
Affiliation(s)
- Yaling Zhang
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
| | - Jingjing Zhang
- College of Physics and Electronic Information, Shanxi Normal University, Taiyuan 030006, China
| | - Wenjia Yang
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
| | - Huisheng Zhang
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
- College of Physics and Electronic Information, Shanxi Normal University, Taiyuan 030006, China
| | - Jianfeng Jia
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
| |
Collapse
|
23
|
Man P, Huang L, Zhao J, Ly TH. Ferroic Phases in Two-Dimensional Materials. Chem Rev 2023; 123:10990-11046. [PMID: 37672768 DOI: 10.1021/acs.chemrev.3c00170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.
Collapse
Affiliation(s)
- Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
| |
Collapse
|
24
|
Wang K, Ren K, Hou Y, Cheng Y, Zhang G. Magnon-phonon coupling: from fundamental physics to applications. Phys Chem Chem Phys 2023; 25:21802-21815. [PMID: 37581291 DOI: 10.1039/d3cp02683c] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
In recent decades, there are immense applications for bulk and few-layer magnetic insulators in biomedicine, data storage, and signal transfer. In these applications, the interaction between spin and lattice vibration has significant impacts on the device performance. In this article, we systematically review the fundamental physical aspects of magnon-phonon coupling in magnetic insulators. We first introduce the fundamental physics of magnons and magnon-phonon coupling in magnetic insulators and then discuss the influence of magnon-phonon coupling on the properties of magnons and phonons. Finally, a summary is presented, and we also discuss the possible open problems in this field. This article presents the advanced understanding of magnon-phonon coupling in magnetic insulators, which provides new opportunities for improving various possible applications.
Collapse
Affiliation(s)
- Ke Wang
- School of Automation, Xi'an University of Posts and Telecommunications, Shaanxi, 710121, China
- Monash Suzhou Research Institute, Monash University, Suzhou Industrial Park, Suzhou 215000, PR China.
| | - Kai Ren
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing, Jiangsu 210042, China
| | - Yinlong Hou
- School of Automation, Xi'an University of Posts and Telecommunications, Shaanxi, 710121, China
| | - Yuan Cheng
- Monash Suzhou Research Institute, Monash University, Suzhou Industrial Park, Suzhou 215000, PR China.
- Department of Materials Science and Engineering, Monash University, VIC 3800, Australia
| | - Gang Zhang
- Institute of High Performance Computing, A*STAR, 138632, Singapore.
| |
Collapse
|
25
|
Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
Collapse
Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
| |
Collapse
|
26
|
Gong R, He G, Gao X, Ju P, Liu Z, Ye B, Henriksen EA, Li T, Zu C. Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride. Nat Commun 2023; 14:3299. [PMID: 37280252 DOI: 10.1038/s41467-023-39115-y] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Accepted: 05/26/2023] [Indexed: 06/08/2023] Open
Abstract
Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ([Formula: see text]) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolate different dephasing sources, we observe more than 5-fold improvement in the measured coherence times across all hBN samples. Crucially, we identify that the many-body interaction within the [Formula: see text] ensemble plays a substantial role in the coherent dynamics, which is then used to directly estimate the concentration of [Formula: see text]. We find that at high ion implantation dosage, only a small portion of the created boron vacancy defects are in the desired negatively charged state. Finally, we investigate the spin response of [Formula: see text] to the local charged defects induced electric field signals, and estimate its ground state transverse electric field susceptibility. Our results provide new insights on the spin and charge properties of [Formula: see text], which are important for future use of defects in hBN as quantum sensors and simulators.
Collapse
Affiliation(s)
- Ruotian Gong
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Guanghui He
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Zhongyuan Liu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Bingtian Ye
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Erik A Henriksen
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Chong Zu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA.
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
| |
Collapse
|
27
|
Hao H, Lin ML, Xu B, Wu H, Wang Y, Peng H, Tan PH, Tong L, Zhang J. Enhanced Layer-Breathing Modes in van der Waals Heterostructures Based on Twisted Bilayer Graphene. ACS NANO 2023. [PMID: 37267416 DOI: 10.1021/acsnano.3c00022] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The characterization of interlayer coupling in two-dimensional van der Waals heterostructures (vdWHs) is essential to understand their quantum behaviors and structural functionalities. Interlayer shear and layer-breathing (LB) phonons carry rich information on interlayer interaction, but they are usually too weak to be detected via standard Raman spectroscopy due to the weak electron-phonon coupling (EPC). Here, we report a universal strategy to enhance LB modes of vdWHs based on twisted bilayer graphene (tBLG). In both tBLG/hBN and tBLG/MoS2 vdWHs, the resonantly excited electrons in tBLG can strongly couple to LB phonons extended over the entire layers in the vdWHs, whose resonance condition is tunable by the twist angle of tBLG. In vdWHs containing twisted graphene layers with multiple twisted interfaces, the EPC of LB phonons coming from the collective LB vibrations of entire heterostructure layers can be tuned by resonant excitation of programmable van Hove singularities according to each twisted interface. The universality and tunability of enhanced LB phonons by tBLG make it a promising method to investigate EPC and interlayer interaction in related vdWHs.
Collapse
Affiliation(s)
- He Hao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
| | - Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Bo Xu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Heng Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
| |
Collapse
|
28
|
Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
Collapse
Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
| |
Collapse
|
29
|
Guo X, Lyu W, Chen T, Luo Y, Wu C, Yang B, Sun Z, García de Abajo FJ, Yang X, Dai Q. Polaritons in Van der Waals Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2201856. [PMID: 36121344 DOI: 10.1002/adma.202201856] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2022] [Revised: 08/15/2022] [Indexed: 05/17/2023]
Abstract
2D monolayers supporting a wide variety of highly confined plasmons, phonon polaritons, and exciton polaritons can be vertically stacked in van der Waals heterostructures (vdWHs) with controlled constituent layers, stacking sequence, and even twist angles. vdWHs combine advantages of 2D material polaritons, rich optical structure design, and atomic scale integration, which have greatly extended the performance and functions of polaritons, such as wide frequency range, long lifetime, ultrafast all-optical modulation, and photonic crystals for nanoscale light. Here, the state of the art of 2D material polaritons in vdWHs from the perspective of design principles and potential applications is reviewed. Some fundamental properties of polaritons in vdWHs are initially discussed, followed by recent discoveries of plasmons, phonon polaritons, exciton polaritons, and their hybrid modes in vdWHs. The review concludes with a perspective discussion on potential applications of these polaritons such as nanophotonic integrated circuits, which will benefit from the intersection between nanophotonics and materials science.
Collapse
Affiliation(s)
- Xiangdong Guo
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wei Lyu
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Tinghan Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- School of Life Science, Peking University, Beijing, 100871, P. R. China
| | - Yang Luo
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- School of Life Science, Peking University, Beijing, 100871, P. R. China
| | - Chenchen Wu
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Bei Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhipei Sun
- Department of Electronics and Nanoengineering and QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, 02150, Finland
| | - F Javier García de Abajo
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, Barcelona, 08010, Spain
| | - Xiaoxia Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qing Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| |
Collapse
|
30
|
Edwards B, Dowinton O, Hall AE, Murgatroyd PAE, Buchberger S, Antonelli T, Siemann GR, Rajan A, Morales EA, Zivanovic A, Bigi C, Belosludov RV, Polley CM, Carbone D, Mayoh DA, Balakrishnan G, Bahramy MS, King PDC. Giant valley-Zeeman coupling in the surface layer of an intercalated transition metal dichalcogenide. NATURE MATERIALS 2023; 22:459-465. [PMID: 36658327 DOI: 10.1038/s41563-022-01459-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Accepted: 12/06/2022] [Indexed: 06/17/2023]
Abstract
Spin-valley locking is ubiquitous among transition metal dichalcogenides with local or global inversion asymmetry, in turn stabilizing properties such as Ising superconductivity, and opening routes towards 'valleytronics'. The underlying valley-spin splitting is set by spin-orbit coupling but can be tuned via the application of external magnetic fields or through proximity coupling. However, only modest changes have been realized to date. Here, we investigate the electronic structure of the V-intercalated transition metal dichalcogenide V1/3NbS2 using microscopic-area spatially resolved and angle-resolved photoemission spectroscopy. Our measurements and corresponding density functional theory calculations reveal that the bulk magnetic order induces a giant valley-selective Ising coupling exceeding 50 meV in the surface NbS2 layer, equivalent to application of a ~250 T magnetic field. This energy scale is of comparable magnitude to the intrinsic spin-orbit splittings, and indicates how coupling of local magnetic moments to itinerant states of a transition metal dichalcogenide monolayer provides a powerful route to controlling their valley-spin splittings.
Collapse
Affiliation(s)
- B Edwards
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - O Dowinton
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | - A E Hall
- Department of Physics, University of Warwick, Coventry, United Kingdom
| | - P A E Murgatroyd
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - S Buchberger
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - T Antonelli
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - G-R Siemann
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - A Rajan
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - E Abarca Morales
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - A Zivanovic
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - C Bigi
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK
| | - R V Belosludov
- Institute for Materials Research, Tohoku University, Sendai, Japan
| | - C M Polley
- MAX IV Laboratory, Lund University, Lund, Sweden
| | - D Carbone
- MAX IV Laboratory, Lund University, Lund, Sweden
| | - D A Mayoh
- Department of Physics, University of Warwick, Coventry, United Kingdom
| | - G Balakrishnan
- Department of Physics, University of Warwick, Coventry, United Kingdom
| | - M S Bahramy
- Department of Physics and Astronomy, University of Manchester, Manchester, UK.
| | - P D C King
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK.
| |
Collapse
|
31
|
Rong R, Liu Y, Nie X, Zhang W, Zhang Z, Liu Y, Guo W. The Interaction of 2D Materials With Circularly Polarized Light. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206191. [PMID: 36698292 PMCID: PMC10074140 DOI: 10.1002/advs.202206191] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.
Collapse
Affiliation(s)
- Rong Rong
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Ying Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Xuchen Nie
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| |
Collapse
|
32
|
Choi J, Lane C, Zhu JX, Crooker SA. Asymmetric magnetic proximity interactions in MoSe 2/CrBr 3 van der Waals heterostructures. NATURE MATERIALS 2023; 22:305-310. [PMID: 36536140 DOI: 10.1038/s41563-022-01424-w] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 10/27/2022] [Indexed: 06/17/2023]
Abstract
Magnetic proximity interactions between atomically thin semiconductors and two-dimensional magnets provide a means to manipulate spin and valley degrees of freedom in non-magnetic monolayers, without using applied magnetic fields1-3. In such van der Waals heterostructures, magnetic proximity interactions originate in the nanometre-scale coupling between spin-dependent electronic wavefunctions in the two materials, and typically their overall effect is regarded as an effective magnetic field acting on the semiconductor monolayer4-8. Here we demonstrate that magnetic proximity interactions in van der Waals heterostructures can in fact be markedly asymmetric. Valley-resolved reflection spectroscopy of MoSe2/CrBr3 van der Waals structures reveals strikingly different energy shifts in the K and K' valleys of the MoSe2 due to ferromagnetism in the CrBr3 layer. Density functional calculations indicate that valley-asymmetric magnetic proximity interactions depend sensitively on the spin-dependent hybridization of overlapping bands and as such are likely a general feature of hybrid van der Waals structures. These studies suggest routes to control specific spin and valley states in monolayer semiconductors9,10.
Collapse
Affiliation(s)
- Junho Choi
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Christopher Lane
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, USA
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Jian-Xin Zhu
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, USA
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Scott A Crooker
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, NM, USA.
| |
Collapse
|
33
|
Qi Y, Sadi MA, Hu D, Zheng M, Wu Z, Jiang Y, Chen YP. Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205714. [PMID: 35950446 DOI: 10.1002/adma.202205714] [Citation(s) in RCA: 24] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.
Collapse
Affiliation(s)
- Yaping Qi
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Mohammad A Sadi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Dan Hu
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Ming Zheng
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou, 221116, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, P. R. China
| | - Yong P Chen
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Department of Physics and Astronomy and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, 47907, USA
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus-C, 8000, Denmark
| |
Collapse
|
34
|
Wang ZA, Xue W, Yan F, Zhu W, Liu Y, Zhang X, Wei Z, Chang K, Yuan Z, Wang K. Selectively Controlled Ferromagnets by Electric Fields in van der Waals Ferromagnetic Heterojunctions. NANO LETTERS 2023; 23:710-717. [PMID: 36626837 DOI: 10.1021/acs.nanolett.2c04796] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface is formed. The recently discovered van der Waals ferromagnets with atomically sharp interfaces provided a perfect platform for the electrical control of interfacial charge transfer. Here, we report magnetoresistance experiments revealing electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the switching fields of the top or bottom Fe3GeTe2 electrodes. The directional charge transfer from metallic Fe3GeTe2 to semiconducting Cr2Ge2Te6 is revealed by first-principles calculations, which remarkably modifies the magnetic anisotropy energy of Fe3GeTe2, leading to the dramatically suppressed coercivity. The electrically selective control of magnetism demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.
Collapse
Affiliation(s)
- Zi-Ao Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Weishan Xue
- Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Faguang Yan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Wenkai Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yi Liu
- Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Xinhui Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kai Chang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhe Yuan
- Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Kaiyou Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| |
Collapse
|
35
|
Rahman MM, Rustagi A, Tserkovnyak Y, Upadhyaya P. Electrically Active Domain Wall Magnons in Layered van der Waals Antiferromagnets. PHYSICAL REVIEW LETTERS 2023; 130:036701. [PMID: 36763400 DOI: 10.1103/physrevlett.130.036701] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Revised: 10/26/2022] [Accepted: 12/06/2022] [Indexed: 06/18/2023]
Abstract
We study, theoretically, domain wall (DW) magnons-elementary collective excitations of magnetic DWs-in easy-axis layered van der Waals (vdW) antiferromagnets, where they behave as normal modes of coupled spin superfluids. We uncover that, due to spin-charge coupling in vdW magnets, such DW magnons can be activated by voltage-induced torques, thereby providing a path for their low-dissipation and nanoscale excitation. Moreover, the electrical activation and the number of DW magnons at a frequency can be controlled by applying symmetry-breaking static magnetic field, adding tunability of signal transmission by them. Our results highlight that domain walls in vdW magnets provide a promising platform to route coherent spin information for a broad range of explorations in spintronics and magnetism.
Collapse
Affiliation(s)
- Mohammad Mushfiqur Rahman
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
| | - Avinash Rustagi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
| | - Yaroslav Tserkovnyak
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, USA
- Quantum Science Center, Oak Ridge, Tennessee 37831, USA
| |
Collapse
|
36
|
Gogoi L, Gao W, Ajayan PM, Deb P. Quantum magnetic phenomena in engineered heterointerface of low-dimensional van der Waals and non-van der Waals materials. Phys Chem Chem Phys 2023; 25:1430-1456. [PMID: 36601788 DOI: 10.1039/d2cp05228h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Investigating magnetic phenomena at the microscopic level has emerged as an indispensable research domain in the field of low-dimensional magnetic materials. Understanding quantum phenomena that mediate the magnetic interactions in dimensionally confined materials is crucial from the perspective of designing cheaper, compact, and energy-efficient next-generation spintronic devices. The infrequent occurrence of intrinsic long-range magnetic order in dimensionally confined materials hinders the advancement of this domain. Hence, introducing and controlling the ferromagnetic character in two-dimensional materials is important for further prospective studies. The interface in a heterostructure significantly contributes to modulating its collective magnetic properties. Quantum phenomena occurring at the interface of engineered heterostructures can enhance or suppress magnetization of the system and introduce magnetic character to a native non-magnetic system. Considering most 2D magnetic materials are used as stacks with other materials in nanoscale devices, the methods to control the magnetism in a heterostructure and understanding the corresponding mechanism are crucial for promising spintronic and other functional applications. This review highlights the effect of electric polarization of the adjacent layer, changed structural configuration at the vicinity of the interface, natural strain induced by lattice mismatch, and exchange interaction in the interfacial region in modulating the magnetism of heterostructures of van der Waals and non-van der Waals materials. Further, prospects of interface-engineered magnetism in spin-dependent device applications are also discussed.
Collapse
Affiliation(s)
- Liyenda Gogoi
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur, 784028, India.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Pulickel M Ajayan
- Benjamin M. and Mary Greenwood Anderson Professor of Engineering, Department of Materials Science and NanoEngineering, Rice University, 6100 Main Street, Houston, Texas 77005, USA.
| | - Pritam Deb
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur, 784028, India.
| |
Collapse
|
37
|
Tseng CC, Song T, Jiang Q, Lin Z, Wang C, Suh J, Watanabe K, Taniguchi T, McGuire MA, Xiao D, Chu JH, Cobden DH, Xu X, Yankowitz M. Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators. NANO LETTERS 2022; 22:8495-8501. [PMID: 36279401 DOI: 10.1021/acs.nanolett.2c02931] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The extreme versatility of van der Waals materials originates from their ability to exhibit new electronic properties when assembled in close proximity to dissimilar crystals. For example, although graphene is inherently nonmagnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway toward achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI3, CrBr3, and CrCl3). Surprisingly, we are unable to detect a magnetic exchange field in the graphene but instead discover proximity effects featuring unprecedented gate tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator and further exhibits a variety of atypical gate-dependent transport features. The charge transfer can additionally be altered upon switching the magnetic states of the nearest CrI3 layers. Our results provide a roadmap for exploiting proximity effects arising in graphene coupled to magnetic insulators.
Collapse
Affiliation(s)
| | | | | | | | | | | | | | | | - Michael A McGuire
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Di Xiao
- Pacific Northwest National Laboratory, Richland, Washington99354, United States
| | | | | | | | | |
Collapse
|
38
|
All-optical control of spin in a 2D van der Waals magnet. Nat Commun 2022; 13:5976. [PMID: 36216796 PMCID: PMC9551086 DOI: 10.1038/s41467-022-33343-4] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2022] [Accepted: 09/13/2022] [Indexed: 11/25/2022] Open
Abstract
Two-dimensional (2D) van der Waals magnets provide new opportunities for control of magnetism at the nanometre scale via mechanisms such as strain, voltage and the photovoltaic effect. Ultrafast laser pulses promise the fastest and most energy efficient means of manipulating electron spin and can be utilized for information storage. However, little is known about how laser pulses influence the spins in 2D magnets. Here we demonstrate laser-induced magnetic domain formation and all-optical switching in the recently discovered 2D van der Waals ferromagnet CrI3. While the magnetism of bare CrI3 layers can be manipulated with single laser pulses through thermal demagnetization processes, all-optical switching is achieved in nanostructures that combine ultrathin CrI3 with a monolayer of WSe2. The out-of-plane magnetization is switched with multiple femtosecond pulses of either circular or linear polarization, while single pulses result in less reproducible and partial switching. Our results imply that spin-dependent interfacial charge transfer between the WSe2 and CrI3 is the underpinning mechanism for the switching, paving the way towards ultrafast optical control of 2D van der Waals magnets for future photomagnetic recording and device technology. The use of light in driving the magnetization of materials has great technological potential, as well as allowing for insights into the fast dynamics of magnetic systems. Here, the authors combine CrI3, a van der Waals magnet, with WSe2, and demonstrate all optical switching of the resulting heterostructure.
Collapse
|
39
|
Thi-Xuan Dang D, Barik RK, Phan MH, Woods LM. Enhanced Magnetism in Heterostructures with Transition-Metal Dichalcogenide Monolayers. J Phys Chem Lett 2022; 13:8879-8887. [PMID: 36125200 DOI: 10.1021/acs.jpclett.2c01925] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Two-dimensional materials and their heterostructures have opened up new possibilities for magnetism at the nanoscale. In this study, we utilize first-principles simulations to investigate the structural, electronic, and magnetic properties of Fe/WSe2/Pt systems containing pristine, defective, or doped WSe2 monolayers. The proximity effects of the ferromagnetic Fe layer are studied by considering defective and vanadium-doped WSe2 monolayers. All heterostructures are found to be ferromagnetic, and the insertion of the transition-metal dichalcogenide results in a redistribution of spin orientation and an increased density of magnetic atoms due to the magnetized WSe2. There is an increase in the overall total density of states at the Fermi level due to WSe2; however, the transition-metal dichalcogenide may lose its distinct semiconducting properties due to the stronger than van der Waals coupling. Spin-resolved electronic structure properties are linked to larger spin Seebeck coefficients found in heterostructures with WSe2 monolayers.
Collapse
Affiliation(s)
- Diem Thi-Xuan Dang
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Ranjan Kumar Barik
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Manh-Huong Phan
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Lilia M Woods
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| |
Collapse
|
40
|
Spontaneous spin-valley polarization in NbSe2 at a van der Waals interface. Nat Commun 2022; 13:5129. [PMID: 36109495 PMCID: PMC9477796 DOI: 10.1038/s41467-022-32810-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2021] [Accepted: 08/17/2022] [Indexed: 11/24/2022] Open
Abstract
A proximity effect at a van der Waals (vdW) interface enables creation of an emergent quantum electronic ground state. Here we demonstrate that an originally superconducting two-dimensional (2D) NbSe2 forms a ferromagnetic ground state with spontaneous spin polarization at a vdW interface with a 2D ferromagnet V5Se8. We investigated the anomalous Hall effect (AHE) of the NbSe2/V5Se8 magnetic vdW heterostructures, and found that the sign of the AHE was reversed as the number of the V5Se8 layer was thinned down to the monolayer limit. Interestingly, the AHE signal of those samples was enhanced with the in-plane magnetic fields, suggesting an additional contribution to the AHE signal other than magnetization. This unusual behavior is well reproduced by band structure calculations, where the emergence of the Berry curvature along the spin-degenerate nodal lines in 2D NbSe2 by the in-plane magnetization plays a key role, unveiling a unique interplay between magnetism and Zeeman-type spin-orbit interaction in a non-centrosymmetric 2D quantum material. Van der Waals heterostructures made of 2D materials offer a rich platform for the study of novel proximity effects. Here, by means of Hall effect measurements, the authors show a proximity-induced ferromagnetic/ferrovalley ground state with spontaneous spin-valley polarization in a V5Se8/NbSe2 heterostructure.
Collapse
|
41
|
Exciton-coupled coherent magnons in a 2D semiconductor. Nature 2022; 609:282-286. [PMID: 36071189 DOI: 10.1038/s41586-022-05024-1] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Accepted: 06/24/2022] [Indexed: 11/08/2022]
Abstract
The recent discoveries of two-dimensional (2D) magnets1-6 and their stacking into van der Waals structures7-11 have expanded the horizon of 2D phenomena. One exciting application is to exploit coherent magnons12 as energy-efficient information carriers in spintronics and magnonics13,14 or as interconnects in hybrid quantum systems15-17. A particular opportunity arises when a 2D magnet is also a semiconductor, as reported recently for CrSBr (refs. 18-20) and NiPS3 (refs. 21-23) that feature both tightly bound excitons with a large oscillator strength and potentially long-lived coherent magnons owing to the bandgap and spatial confinement. Although magnons and excitons are energetically mismatched by orders of magnitude, their coupling can lead to efficient optical access to spin information. Here we report strong magnon-exciton coupling in the 2D A-type antiferromagnetic semiconductor CrSBr. Coherent magnons launched by above-gap excitation modulate the exciton energies. Time-resolved exciton sensing reveals magnons that can coherently travel beyond seven micrometres, with a coherence time of above five nanoseconds. We observe these exciton-coupled coherent magnons in both even and odd numbers of layers, with and without compensated magnetization, down to the bilayer limit. Given the versatility of van der Waals heterostructures, these coherent 2D magnons may be a basis for optically accessible spintronics, magnonics and quantum interconnects.
Collapse
|
42
|
Li J, Rashetnia M, Lohmann M, Koo J, Xu Y, Zhang X, Watanabe K, Taniguchi T, Jia S, Chen X, Yan B, Cui YT, Shi J. Proximity-magnetized quantum spin Hall insulator: monolayer 1 T' WTe 2/Cr 2Ge 2Te 6. Nat Commun 2022; 13:5134. [PMID: 36050322 PMCID: PMC9436961 DOI: 10.1038/s41467-022-32808-w] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Accepted: 08/18/2022] [Indexed: 11/20/2022] Open
Abstract
Van der Waals heterostructures offer great versatility to tailor unique interactions at the atomically flat interfaces between dissimilar layered materials and induce novel physical phenomena. By bringing monolayer 1 T’ WTe2, a two-dimensional quantum spin Hall insulator, and few-layer Cr2Ge2Te6, an insulating ferromagnet, into close proximity in an heterostructure, we introduce a ferromagnetic order in the former via the interfacial exchange interaction. The ferromagnetism in WTe2 manifests in the anomalous Nernst effect, anomalous Hall effect as well as anisotropic magnetoresistance effect. Using local electrodes, we identify separate transport contributions from the metallic edge and insulating bulk. When driven by an AC current, the second harmonic voltage responses closely resemble the anomalous Nernst responses to AC temperature gradient generated by nonlocal heater, which appear as nonreciprocal signals with respect to the induced magnetization orientation. Our results from different electrodes reveal spin-polarized edge states in the magnetized quantum spin Hall insulator. Van der Waals heterostructures allow for the integration of several materials with different properties in the one heterostructure. Here, Li et al combine a quantum spin hall insulator, WTe2, with an insulating ferromagnet, Cr2Ge2Te6, in a van der Waals heterostructure, with resulting proximity-induced magnetism in the WTe2 layer leading to an anomalous Hall and Nernst effect.
Collapse
Affiliation(s)
- Junxue Li
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA.,Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Mina Rashetnia
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Mark Lohmann
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Jahyun Koo
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Youming Xu
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | - Xiao Zhang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Xi Chen
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Yong-Tao Cui
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Jing Shi
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA.
| |
Collapse
|
43
|
Tenasini G, Soler-Delgado D, Wang Z, Yao F, Dumcenco D, Giannini E, Watanabe K, Taniguchi T, Moulsdale C, Garcia-Ruiz A, Fal'ko VI, Gutiérrez-Lezama I, Morpurgo AF. Band Gap Opening in Bilayer Graphene-CrCl 3/CrBr 3/CrI 3 van der Waals Interfaces. NANO LETTERS 2022; 22:6760-6766. [PMID: 35930625 DOI: 10.1021/acs.nanolett.2c02369] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX3; X = Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX3 takes place (reaching densities in excess of 1013 cm-2), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the σ bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl3 and BLG/CrBr3 the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on the magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX3 conduction band are correlated.
Collapse
Affiliation(s)
| | | | - Zhe Wang
- MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, Shaanxi Province Key Laboratory of Advanced Materials and Mesoscopic Physics, School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | | | | | | | - Kenji Watanabe
- Research Center for Functional Materials, NIMS, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, NIMS, 1-1 Namiki, Tsukuba 305-0044, Japan
| | | | | | - Vladimir I Fal'ko
- Henry Royce Institute for Advanced Materials, Manchester M13 9PL, U.K
| | | | | |
Collapse
|
44
|
Ye C, Wang C, Wu Q, Liu S, Zhou J, Wang G, Söll A, Sofer Z, Yue M, Liu X, Tian M, Xiong Q, Ji W, Renshaw Wang X. Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr. ACS NANO 2022; 16:11876-11883. [PMID: 35588189 DOI: 10.1021/acsnano.2c01151] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Magnetic van der Waals (vdW) materials possess versatile spin configurations stabilized in reduced dimensions. One magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order, and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal an odd-even layer effect of interlayer spin reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy, and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic spin reorientation engineered by magnetic field in the air-stable semiconductor.
Collapse
Affiliation(s)
- Chen Ye
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Cong Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Qiong Wu
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100124, China
| | - Sheng Liu
- Okinawa Institute of Science and Technology, Onna, Okinawa Prefecture 904-0412, Japan
| | - Jiayuan Zhou
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Guopeng Wang
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Aljoscha Söll
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 16628 6 Prague, Czech Republic
| | - Zdenek Sofer
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 16628 6 Prague, Czech Republic
| | - Ming Yue
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100124, China
| | - Xue Liu
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Mingliang Tian
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
| |
Collapse
|
45
|
Pei S, Wang Z, Xia J. Interlayer Coupling: An Additional Degree of Freedom in Two-Dimensional Materials. ACS NANO 2022; 16:11498-11503. [PMID: 35943159 DOI: 10.1021/acsnano.1c11498] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Due to their layered nature, two-dimensional nanomaterials can stack into artificial material systems, with van der Waals interaction between the adjacent constituent layers. In such heterostructures, the physical properties are largely affected by the interlayer coupling and can thus be effectively tuned by a number of means. In this Perspective, we highlight four such experimental approaches: stacking order, electric field, intercalation, and pressure, and we discuss challenges and opportunities in future studies for van der Waals heterostructures.
Collapse
Affiliation(s)
- Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| |
Collapse
|
46
|
Bandyopadhyay A, Li S, Frauenheim T. Role of External Stimuli in Engineering Magnetic Phases and Real-Time Spin Dynamics of Co/Mn Oxides. J Phys Chem Lett 2022; 13:6755-6761. [PMID: 35852496 DOI: 10.1021/acs.jpclett.2c01716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Magnetism in atomically thin two-dimensional (2D) materials can be easily manipulated by alloying, functionalization, external ultrafast laser pulse, strain, electric field, etc. In this work, we have performed a series of spin-resolved density functional theory calculations on 2D magnetic hexagonal transition-metal oxide alloys, CoMnO4. We have explored different alloy patterns and found the most stable magnetic phases in each pattern, resulting in a stable ferromagnetic (FM) ground state depending upon the pattern. We have used Janus functionalization in these materials to tune the magnetic nature of the system from FM to antiferromagnetic (AFM) states. To further control the spin dynamics, we have applied an ultrafast laser pulse to the Janus systems to explore an AFM-to-FM transition process. Finally, applying strain and electric field to the Janus alloys allows us to tune the structure-property relationship in the 2D layers to obtain desirable spin arrangements.
Collapse
Affiliation(s)
- Arkamita Bandyopadhyay
- Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 28359 Bremen, Germany
| | - Shuo Li
- Institute for Advanced Study, Chengdu University, Chengdu 610100, P.R. China
- Beijing Computational Science Research Center (CSRC), Beijing 100193, China
- Shenzhen Computational Science and Applied Research (CSAR) Institute, Shenzhen 518110, China
| | - Thomas Frauenheim
- Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 28359 Bremen, Germany
- Beijing Computational Science Research Center (CSRC), Beijing 100193, China
- Shenzhen Computational Science and Applied Research (CSAR) Institute, Shenzhen 518110, China
| |
Collapse
|
47
|
Li S, Zhou L, Frauenheim T, He J. Light-Controlled Ultrafast Magnetic State Transition in Antiferromagnetic-Ferromagnetic van der Waals Heterostructures. J Phys Chem Lett 2022; 13:6223-6229. [PMID: 35770897 DOI: 10.1021/acs.jpclett.2c01476] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Manipulating spin in antiferromagnetic (AFM) materials has great potential in AFM opto-spintronics. Laser pulses can induce a transient ferromagnetic (FM) state in AFM metallic systems but have never been proven in two-dimensional (2D) AFM semiconductors and related van der Waals (vdW) heterostructures. Herein, using 2D vdW heterostructures of FM MnS2 and AFM MXenes as prototypes, we investigated optically induced interlayer spin transfer dynamics based on real-time time-dependent density functional theory. We observed that laser pulses induce significant spin injection and interfacial atom-mediated spin transfer from MnS2 to Cr2CCl2. In particular, we first demonstrated the transient FM state in semiconducting AFM-FM heterostructures during photoexcited processes. The proximity magnetism breaks the magnetic symmetry of Cr2CCl2 in heterostructures. Our results provide a microscopic understanding of optically controlled interlayer spin dynamics in 2D magnetic heterostructures and open a new way to manipulate magnetic order in 2D materials for ultrafast opto-spintronics.
Collapse
Affiliation(s)
- Shuo Li
- Institute for Advanced Study, Chengdu University, Chengdu 610100, P. R. China
- Beijing Computational Science Research Center, Beijing 100193, P. R. China
| | - Liujiang Zhou
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Thomas Frauenheim
- Beijing Computational Science Research Center, Beijing 100193, P. R. China
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518110, P. R. China
| | - Junjie He
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Prague 12843, Czechia
| |
Collapse
|
48
|
Choi E, Sim KI, Burch KS, Lee YH. Emergent Multifunctional Magnetic Proximity in van der Waals Layered Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200186. [PMID: 35596612 PMCID: PMC9313546 DOI: 10.1002/advs.202200186] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 04/01/2022] [Indexed: 05/10/2023]
Abstract
Proximity effect, which is the coupling between distinct order parameters across interfaces of heterostructures, has attracted immense interest owing to the customizable multifunctionalities of diverse 3D materials. This facilitates various physical phenomena, such as spin order, charge transfer, spin torque, spin density wave, spin current, skyrmions, and Majorana fermions. These exotic physics play important roles for future spintronic applications. Nevertheless, several fundamental challenges remain for effective applications: unavoidable disorder and lattice mismatch limits in the growth process, short characteristic length of proximity, magnetic fluctuation in ultrathin films, and relatively weak spin-orbit coupling (SOC). Meanwhile, the extensive library of atomically thin, 2D van der Waals (vdW) layered materials, with unique characteristics such as strong SOC, magnetic anisotropy, and ultraclean surfaces, offers many opportunities to tailor versatile and more effective functionalities through proximity effects. Here, this paper focuses on magnetic proximity, i.e., proximitized magnetism and reviews the engineering of magnetism-related functionalities in 2D vdW layered heterostructures for next-generation electronic and spintronic devices. The essential factors of magnetism and interfacial engineering induced by magnetic layers are studied. The current limitations and future challenges associated with magnetic proximity-related physics phenomena in 2D heterostructures are further discussed.
Collapse
Affiliation(s)
- Eun‐Mi Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kyung Ik Sim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kenneth S. Burch
- Department of PhysicsBoston College140 Commonwealth AveChestnut HillMA02467‐3804USA
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
| |
Collapse
|
49
|
Salvador AG, Kuhlenkamp C, Ciorciaro L, Knap M, İmamoğlu A. Optical Signatures of Periodic Magnetization: The Moiré Zeeman Effect. PHYSICAL REVIEW LETTERS 2022; 128:237401. [PMID: 35749170 DOI: 10.1103/physrevlett.128.237401] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2021] [Accepted: 04/22/2022] [Indexed: 06/15/2023]
Abstract
Detecting magnetic order at the nanoscale is of central interest for the study of quantum magnetism in general, and the emerging field of moiré magnets in particular. Here, we analyze the exciton band structure that arises from a periodic modulation of the valley Zeeman effect. Despite long-range electron-hole exchange interactions, we find a sizable splitting in the energy of the bright circularly polarized exciton Umklapp resonances, which serves as a direct optical probe of magnetic order. We first analyze quantum moiré magnets realized by periodic ordering of electron spins in Mott-Wigner states of transition metal dichalcogenide monolayers or twisted bilayers: we show that spin valley-dependent exciton-electron interactions allow for probing the spin-valley order of electrons and demonstrate that it is possible to observe unique signatures of ferromagnetic order in a triangular lattice and both ferromagnetic and Néel order in a honeycomb lattice. We then focus on semiclassical moiré magnets realized in twisted bilayers of ferromagnetic materials: we propose a detection scheme for moiré magnetism that is based on interlayer exchange coupling between spins in a moiré magnet and excitons in a transition metal dichalcogenide monolayer.
Collapse
Affiliation(s)
| | - Clemens Kuhlenkamp
- Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland
- Department of Physics, Technical University of Munich, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, D-80799 München, Germany
| | - Livio Ciorciaro
- Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland
| | - Michael Knap
- Department of Physics, Technical University of Munich, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, D-80799 München, Germany
| | - Ataç İmamoğlu
- Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland
| |
Collapse
|
50
|
Mathur N, Mukherjee A, Gao X, Luo J, McCullian BA, Li T, Vamivakas AN, Fuchs GD. Excited-state spin-resonance spectroscopy of V[Formula: see text] defect centers in hexagonal boron nitride. Nat Commun 2022; 13:3233. [PMID: 35680866 PMCID: PMC9184587 DOI: 10.1038/s41467-022-30772-z] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Accepted: 05/14/2022] [Indexed: 11/17/2022] Open
Abstract
The recently discovered spin-active boron vacancy (V[Formula: see text]) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system from D3h to C2v. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing.
Collapse
Affiliation(s)
- Nikhil Mathur
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY USA
| | | | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN USA
| | - Jialun Luo
- Department of Physics, Cornell University, Ithaca, NY USA
| | | | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN USA
| | - A. Nick Vamivakas
- The Institute of Optics, University of Rochester, Rochester, NY USA
- Materials Science, University of Rochester, Rochester, NY USA
- Department of Physics and Astronomy, University of Rochester, Rochester, NY USA
- Center for Coherence and Quantum Optics, University of Rochester, Rochester, NY USA
| | - Gregory D. Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY USA
| |
Collapse
|