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Vu TV, Kartamyshev AI, Ho TH, Hieu NN, Phuc HV, Nguyen ST, Nguyen CV. Unveiling Versatile Electronic Properties and Contact Features of Metal-Semiconductor Graphene/γ-Ge 2SSe van der Waals Heterostructures. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:20783-20790. [PMID: 39307988 DOI: 10.1021/acs.langmuir.4c02947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/02/2024]
Abstract
Recently, searching for a metal-semiconductor junction (MSJ) that exhibits low-contact resistance has received tremendous consideration, as they are essential components in next-generation field-effect transistors. In this work, we design a MSJ by integrating two-dimensional (2D) graphene as the metallic electrode and 2D Janus γ-Ge2SSe as the semiconducting channel using first-principles simulations. All the graphene/γ-Ge2SSe MSJs are predicted to be energetically, mechanically, and thermodynamically stable, characterized by the weak van der Waals (vdW) interactions. The graphene/γ-SGe2Se MSJ-vdWH form the n-type Schottky contact (SC), while the graphene/γ-SeGe2S MSJ-vdWH form the p-type one, suggesting that the switching between p-type and n-type SC in the graphene/γ-Ge2SSe MSJ-vdWHs can occur spontaneously by simply altering the stacking patterns, without requiring any external conditions. Notably, the contact features, including contact types and barriers of the graphene/γ-Ge2SSe MSJs are significant in versatility and can be altered by applying electric gating and adjusting interlayer spacing. Both the applied electric gating and strain engineering induce switchability between p- and n-type and SC to OC in the graphene/γ-Ge2SSE MSJs. This versatility underscores the potential of the graphene/γ-Ge2SSe MSJ for next-generation applications that require low-contact resistance and high performance.
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Affiliation(s)
- Tuan V Vu
- Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City 70000, Vietnam
- Faculty of Mechanical - Electrical and Computer Engineering, School of Technology, Van Lang University, Ho Chi Minh City 70000, Vietnam
| | - Andrey I Kartamyshev
- Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City 70000, Vietnam
- Faculty of Mechanical - Electrical and Computer Engineering, School of Technology, Van Lang University, Ho Chi Minh City 70000, Vietnam
| | - Thi H Ho
- Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City 70000, Vietnam
- Faculty of Mechanical - Electrical and Computer Engineering, School of Technology, Van Lang University, Ho Chi Minh City 70000, Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Huynh V Phuc
- Division of Physics, School of Education, Dong Thap University, Cao Lanh 870000, Vietnam
| | - Son-Tung Nguyen
- Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University, Hanoi 100000, Vietnam
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2
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Zhai Y, Shi Z, Xia Q, Han W, Li W, Deng X, Zhang X. Lithiation: Advancing Material Synthesis and Structural Engineering for Emerging Applications. ACS NANO 2024; 18:26477-26502. [PMID: 39301666 DOI: 10.1021/acsnano.4c09114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/22/2024]
Abstract
Lithiation, a process of inserting lithium ions into a host material, is revolutionizing nanomaterials synthesis and structural engineering as well as enhancing their performance across emerging applications, particularly valuable for large-scale synthesis of high-quality low-dimensional nanomaterials. Through a systematic investigation of the synthetic strategies and structural changes induced by lithiation, this review aims to offer a comprehensive understanding of the development, potential, and challenges associated with this promising approach. First, the basic principles of lithiation/delithiation processes will be introduced. Then, the recent advancements in the lithiation-induced structure changes of nanomaterials, such as morphology tuning, phase transition, defect generation, etc., will be stressed, emphasizing the importance of lithiation in structural modulation of nanomaterials. With the tunable structures induced by the lithiation, the properties and performance in electrochemical, photochemical, electronic devices, bioapplications, etc. will be discussed, followed by outlining the current challenges and perspectives in this research area.
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Affiliation(s)
- Yanjie Zhai
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Zhenqi Shi
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Qing Xia
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Wenkai Han
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Weisong Li
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Xiaoran Deng
- Jiangsu Province Key Laboratory in Anesthesiology, School of Anesthesiology, Xuzhou Medical University, Jiangsu 221004, China
| | - Xiao Zhang
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
- Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
- Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
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3
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Liu X, Shan J, Cao T, Zhu L, Ma J, Wang G, Shi Z, Yang Q, Ma M, Liu Z, Yan S, Wang L, Dai Y, Xiong J, Chen F, Wang B, Pan C, Wang Z, Cheng B, He Y, Luo X, Lin J, Liang SJ, Miao F. On-device phase engineering. NATURE MATERIALS 2024; 23:1363-1369. [PMID: 38664497 DOI: 10.1038/s41563-024-01888-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 04/03/2024] [Indexed: 08/15/2024]
Abstract
In situ tailoring of two-dimensional materials' phases under external stimulus facilitates the manipulation of their properties for electronic, quantum and energy applications. However, current methods are mainly limited to the transitions among phases with unchanged chemical stoichiometry. Here we propose on-device phase engineering that allows us to realize various lattice phases with distinct chemical stoichiometries. Using palladium and selenide as a model system, we show that a PdSe2 channel with prepatterned Pd electrodes can be transformed into Pd17Se15 and Pd4Se by thermally tailoring the chemical composition ratio of the channel. Different phase configurations can be obtained by precisely controlling the thickness and spacing of the electrodes. The device can be thus engineered to implement versatile functions in situ, such as exhibiting superconducting behaviour and achieving ultralow-contact resistance, as well as customizing the synthesis of electrocatalysts. The proposed on-device phase engineering approach exhibits a universal mechanism and can be expanded to 29 element combinations between a metal and chalcogen. Our work highlights on-device phase engineering as a promising research approach through which to exploit fundamental properties as well as their applications.
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Affiliation(s)
- Xiaowei Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junjie Shan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Tianjun Cao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Liang Zhu
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
| | - Jiayu Ma
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou, China
| | - Gang Wang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
| | - Zude Shi
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Qishuo Yang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
| | - Mingyu Ma
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Zenglin Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Shengnan Yan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Lizheng Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yudi Dai
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junlin Xiong
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fanqiang Chen
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Buwei Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Chen Pan
- Institute of Interdisciplinary Physical Sciences, School of Physics, Nanjing University of Science and Technology, Nanjing, China
| | - Zhenlin Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Bin Cheng
- Institute of Interdisciplinary Physical Sciences, School of Physics, Nanjing University of Science and Technology, Nanjing, China
| | - Yongmin He
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou, China.
| | - Junhao Lin
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China.
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, Shenzhen, China.
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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4
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Quan W, Shi J, Zeng M, Li B, Liu Z, Lv W, Fan C, Wu J, Liu X, Yang J, Hu N, Yang Z. Quantum Confinement and End-Sealing Effects for Highly Sensitive and Stable Nitrogen Dioxide Detection: Homogeneous Integration of Ti 3C 2T x-Based Flexible Gas Sensors. ACS Sens 2024; 9:4578-4590. [PMID: 39223701 DOI: 10.1021/acssensors.4c00576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
The real-time and room-temperature detection of nitrogen dioxide (NO2) holds significant importance for environmental monitoring. However, the performance of NO2 sensors has been hampered by the trade-off between the high sensitivity and stability of conventional sensitive materials. Here, we present a novel fully flexible paper-based gas sensing structure by combining a homogeneous screen-printed titanium carbide (Ti3C2Tx) MXene-based nonmetallic electrode with a MoS2 quantum dots/Ti3C2Tx (MoS2 QDs/Ti3C2Tx) gas-sensing film. These precisely designed gas sensors demonstrate an improved response value (16.3% at 5 ppm) and a low theoretical detection limit of 12.1 ppb toward NO2, which exhibit a remarkable 3.5-fold increase in sensitivity compared to conventional Au interdigital electrodes. The outstanding performance can be attributed to the integration of the quantum confinement effect of MoS2 QDs and the conductivity of Ti3C2Tx, establishing the main active adsorption sites and enhanced charge transport pathways. Furthermore, an end-sealing effect strategy was applied to decorate the defect sites with naturally oxygen-rich tannic acid and conductive polymer, and the formed hydrogen bonding network at the interface effectively mitigated the oxidative degradation of the Ti3C2Tx-based gas sensors. The exceptional stability has been achieved with only a 1.8% decrease in response over 4 weeks. This work highlights the innovative design of high-performance gas sensing materials and homogeneous gas sensor techniques.
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Affiliation(s)
- Wenjing Quan
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jia Shi
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Min Zeng
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Bin Li
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Zhou Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wen Lv
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Chao Fan
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jian Wu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xue Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jianhua Yang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Nantao Hu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhi Yang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China
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5
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Kim SY, Sun Z, Roy J, Wang X, Chen Z, Appenzeller J, Wallace RM. Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS 2. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39316070 DOI: 10.1021/acsami.4c10082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/25/2024]
Abstract
The interface properties and thermal stability of bismuth (Bi) contacts on molybdenum disulfide (MoS2) shed light on their behavior under various deposition conditions and temperatures. The examination involves extensive techniques including X-ray photoelectron spectroscopy, scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). Bi contacts formed a van der Waals interface on MoS2 regardless of deposition conditions, such as ultrahigh vacuum (UHV, 3 × 10-11 mbar) and high vacuum (HV, 4 × 10-6 mbar), while the oxidation on MoS2 has been observed. However, the semimetallic properties of Bi suppress the impact of defect states, including oxidized-MoS2 and vacancies. Notably, the n-type characteristic of Bi/MoS2 remains unaffected, and no significant changes in the local density of states near the conduction band minimum are observed despite the presence of defects detected by STM and STS. As a result, the Fermi level (EF) resides below the conduction band of MoS2. The study also examines the impact of annealing on the contact interface, revealing no interface reaction between Bi and MoS2 up to 300 °C. These findings enhance our understanding of semimetal (Bi) contacts on MoS2, with implications for improving the performance and reliability of electronic devices.
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Affiliation(s)
- Seong Yeoul Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Zheng Sun
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Joy Roy
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Xinglu Wang
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Zhihong Chen
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Joerg Appenzeller
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Robert M Wallace
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
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6
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Li Y, Xu L, Yang C, Xu L, Liu S, Yang Z, Li Q, Dong J, Yang J, Lu J. Electrical Contacts in Monolayer MoSi 2N 4 Transistors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:49496-49507. [PMID: 39231283 DOI: 10.1021/acsami.4c09880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/06/2024]
Abstract
The latest synthesized monolayer (ML) MoSi2N4 material exhibits stability in ambient conditions, suitable bandgap, and high mobilities. Its potential as a next-generation transistor channel material has been demonstrated through quantum transport simulations. However, in practical two-dimensional (2D) material transistors, the electrical contacts formed by the channel and the electrode must be optimized, as they are crucial for determining the efficiency of carrier injection. We employed the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method to systematically explore the vertical and horizontal interfaces between the typical metal electrodes and the ML MoSi2N4. The DFT+NEGF method incorporates the coupling between the electrode and the channel, which is crucial for quantum transport. Among these metals, Sc and Ti form n-type Ohmic contacts with zero tunneling barriers at both vertical and horizontal interfaces with ML MoSi2N4, making them optimal for contact metals. In-ML MoSi2N4 contacts display zero Schottky barriers but a 3.11 eV tunneling barrier. Cu and Au establish n-type Schottky contacts, while Pt forms a p-type contact. The Fermi pinning factors of the metal-ML MoSi2N4 contacts for both electrons and holes are above 0.51, much higher than the typical 2D semiconductors. Moreover, there is a strong positive correlation between the Fermi pinning factor and the band gap, with a Spearman rank correlation coefficient of 0.897 and a p-value below 0.001. Our work provides insight into the contact optimization for the ML MoSi2N4 transistors and highlights the promising potential of ML MoSi2N4 as the channel material for the next-generation FETs.
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Affiliation(s)
- Ying Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Lianqiang Xu
- School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials, Ningxia Normal University, Guyuan 756000, China
| | - Chen Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Linqiang Xu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
- Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Shiqi Liu
- State Key Laboratory of Spintronics Devices and Technologies, Hangzhou 311305, P. R. China
| | - Zongmeng Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Qiuhui Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Jichao Dong
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Jie Yang
- Key Laboratory of Material Physics, School of Physics, Ministry of Education, Zhengzhou University, Zhengzhou 450001, P. R. China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, P. R. China
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7
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Ji Z, Zhao Y, Chen Y, Zhu Z, Wang Y, Liu W, Modi G, Mele EJ, Jin S, Agarwal R. Opto-twistronic Hall effect in a three-dimensional spiral lattice. Nature 2024:10.1038/s41586-024-07949-1. [PMID: 39294380 DOI: 10.1038/s41586-024-07949-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Accepted: 08/14/2024] [Indexed: 09/20/2024]
Abstract
Studies of moiré systems have explained the effect of superlattice modulations on their properties, demonstrating new correlated phases1. However, most experimental studies have focused on a few layers in two-dimensional systems. Extending twistronics to three dimensions, in which the twist extends into the third dimension, remains underexplored because of the challenges associated with the manual stacking of layers. Here we study three-dimensional twistronics using a self-assembled twisted spiral superlattice of multilayered WS2. Our findings show an opto-twistronic Hall effect driven by structural chirality and coherence length, modulated by the moiré potential of the spiral superlattice. This is an experimental manifestation of the noncommutative geometry of the system. We observe enhanced light-matter interactions and an altered dependence of the Hall coefficient on photon momentum. Our model suggests contributions from higher-order quantum geometric quantities to this observation, providing opportunities for designing quantum-materials-based optoelectronic lattices with large nonlinearities.
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Affiliation(s)
- Zhurun Ji
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
- Department of Physics and Applied Physics, Stanford University, Stanford, CA, USA
| | - Yuzhou Zhao
- Department of Chemistry, University of Wisconsin-Madison, Madison, WI, USA
| | - Yicong Chen
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Ziyan Zhu
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Yuhui Wang
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Wenjing Liu
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Gaurav Modi
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Eugene J Mele
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Song Jin
- Department of Chemistry, University of Wisconsin-Madison, Madison, WI, USA
| | - Ritesh Agarwal
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA.
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8
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Zhang Z, Hoang L, Hocking M, Peng Z, Hu J, Zaborski G, Reddy PD, Dollard J, Goldhaber-Gordon D, Heinz TF, Pop E, Mannix AJ. Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition. ACS NANO 2024; 18:25414-25424. [PMID: 39230253 PMCID: PMC11412230 DOI: 10.1021/acsnano.4c02164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2024]
Abstract
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS2 growth with tunable morphologies─from separated single-crystal domains to continuous monolayer films─on a variety of substrates, including sapphire, SiO2, and Au. These WS2 films exhibit narrow neutral exciton photoluminescence line widths down to 27-28 meV and room-temperature mobility up to 34-36 cm2 V-1 s-1. Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS2, MoxW1-xS2 alloys, and in-plane WS2-MoS2 heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.
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Affiliation(s)
- Zhepeng Zhang
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Lauren Hoang
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Marisa Hocking
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Zhenghan Peng
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Jenny Hu
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Gregory Zaborski
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Pooja D Reddy
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Johnny Dollard
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - David Goldhaber-Gordon
- Department of Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Tony F Heinz
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Photon Sciences, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States
| | - Andrew J Mannix
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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9
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Ghods S, Lee H, Choi JH, Moon JY, Kim S, Kim SI, Kwun HJ, Josline MJ, Kim CY, Hyun SH, Kim SW, Son SK, Lee T, Lee YK, Heo K, Novoselov KS, Lee JH. Topological van der Waals Contact for Two-Dimensional Semiconductors. ACS NANO 2024. [PMID: 39264283 DOI: 10.1021/acsnano.4c07585] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2024]
Abstract
The relentless miniaturization inherent in complementary metal-oxide semiconductor technology has created challenges at the interface of two-dimensional (2D) materials and metal electrodes. These challenges, predominantly stemming from metal-induced gap states (MIGS) and Schottky barrier heights (SBHs), critically impede device performance. This work introduces an innovative implementation of damage-free Sb2Te3 topological van der Waals (T-vdW) contacts, representing an ultimate contact electrode for 2D materials. We successfully fabricate p-type and n-type transistors using monolayer and multilayer WSe2, achieving ultralow SBH (∼24 meV) and contact resistance (∼0.71 kΩ·μm). Simulations highlight the role of topological surface states in Sb2Te3, which effectively mitigate the MIGS effect, thereby significantly elevating device efficiency. Our experimental insights revealed the semiohmic behavior of Sb2Te3 T-vdW contacts, with an exceptional photoresponsivity of 716 A/W and rapid response times of approximately 60 μs. The findings presented herein herald topological contacts as a superior alternative to traditional metal contacts, potentially revolutionizing the performance of miniaturized electronic and optoelectronic devices.
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Affiliation(s)
- Soheil Ghods
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
- School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Korea
| | - Hyunjin Lee
- School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Korea
| | - Jun-Hui Choi
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Ji-Yun Moon
- Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States
| | - Sein Kim
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Seung-Il Kim
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
- Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States
| | - Hyung Jun Kwun
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Mukkath Joseph Josline
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Chan Young Kim
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Sang Hwa Hyun
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Sang Won Kim
- 2D Device Laboratory, Samsung Advanced Institute of Technology, Suwon 16678, Korea
- Device Research Center, Samsung Advanced Institute of Technology, Suwon 16678, Korea
| | - Seok-Kyun Son
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul 02447, Korea
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore
| | - Taehun Lee
- School of Advanced Materials Engineering, Jeonbuk National University, Jeonju 54896, Korea
| | - Yoon Kyeung Lee
- School of Advanced Materials Engineering, Jeonbuk National University, Jeonju 54896, Korea
- Department of Nano Convergence Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Keun Heo
- School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Korea
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore
| | - Jae-Hyun Lee
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore
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10
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Zheng F, Li LJ. Microscopic characterizations for 2D material-based advanced electronics. Micron 2024; 187:103707. [PMID: 39277960 DOI: 10.1016/j.micron.2024.103707] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2024] [Revised: 08/14/2024] [Accepted: 08/23/2024] [Indexed: 09/17/2024]
Abstract
Two-dimensional (2D) materials have gained significant attention as potential candidates for next-generation electronics, owing to their unique properties such as ultrathin layer thickness, mechanical flexibility, and tunable bandgaps. The distinctive characteristics of 2D materials necessitate the development of nanoscale advanced characterization methods. In this review, we explore the role of microscopy techniques in developing 2D materials-based electronics, from material synthesis and characterization to device performance and reliability. We address the applications of microscopies by delving into the perspectives of channel materials, metal contacts, dielectric materials, and device architectures. Additionally, we provide an outlook on the future directions and potential utilization of microscopy techniques in future 2D semiconductor industry.
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Affiliation(s)
- Fangyuan Zheng
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
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11
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Liu Y, Liu S, Wang Z, Al-Bqerat AHM, Zangiabadi A, Perebeinos V, Hone J. Bi-MoSe 2 Contacts in the Ultraclean Limit: Closing the Theory-Experiment Loop. NANO LETTERS 2024; 24:11217-11223. [PMID: 39158041 DOI: 10.1021/acs.nanolett.4c02586] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/20/2024]
Abstract
Achieving robust electrical contacts is crucial for realizing the promise of monolayer 2D semiconductors such as semiconducting transition metal dichalcogenides (s-TMDs) in electronics. Despite recent breakthroughs, a gap remains between the experimental and theoretical understanding of metal-s-TMDs contacts. This study explores bismuth semimetal contacts to monolayer MoSe2, using a platform that minimizes experimental sources of uncertainty; we combine contact-front and contact-end measurements to measure key parameters like specific resistivity (ρc) and transfer length (Lt). We find that the resistivity of MoSe2 under the contacts is enhanced due to charge transfer that can be modeled using a self-consistent approach. In contrast, ab initio calculations of the interlayer charge transfer rate are inconsistent with the measured value of ρc, highlighting the need for new theoretical approaches.
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Affiliation(s)
- Yang Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, New York 10034, United States
| | - Zhiying Wang
- Department of Mechanical Engineering, Columbia University, New York, New York 10034, United States
| | | | - Amirali Zangiabadi
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10034, United States
| | - Vasili Perebeinos
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, United States
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10034, United States
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12
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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13
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Giza M, Świniarski M, Gertych AP, Czerniak-Łosiewicz K, Rogala M, Kowalczyk PJ, Zdrojek M. Contact Resistance Engineering in WS 2-Based FET with MoS 2 Under-Contact Interlayer: A Statistical Approach. ACS APPLIED MATERIALS & INTERFACES 2024; 16:48556-48564. [PMID: 39186441 PMCID: PMC11403553 DOI: 10.1021/acsami.4c09688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable Fermi level pinning effect (FLP), which prevents control over the Schottky barrier height at the metal/2D material junction. We propose to harness the FLP effect to lower contact resistance in field-effect transistors (FETs) by using an additional 2D interlayer at the conducting channel and metallic contact interface (under-contact interlayer). To do so, we developed a new approach using the gold-assisted transfer method, which enables the fabrication of heterostructures consisting of TMDs monolayers with complex shapes, prepatterned using e-beam lithography, with lateral dimensions even down to 100 nm. We designed and demonstrated tungsten disulfide (WS2) monolayer-based devices in which the molybdenum disulfide (MoS2) monolayer is placed only in the contact area of the FET, creating an Au/MoS2/WS2 junction, which effectively reduces contact resistance by over 60% and improves the Ion/Ioff ratio 10 times in comparison to WS2-based devices without MoS2 under-contact interlayer. The enhancement in the device operation arises from the FLP effect occurring only at the interface between the metal and the first layer of the MoS2/WS2 heterostructure. This results in favorable band alignment, which enhances the current flow through the junction. To ensure the reproducibility of our devices, we systematically analyzed 160 FET devices fabricated with under-contact interlayer and without it. Statistical analysis shows a consistent improvement in the operation of the device and reveals the impact of contact resistance on key FET performance indicators.
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Affiliation(s)
- Małgorzata Giza
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Michał Świniarski
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Arkadiusz P Gertych
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | | | - Maciej Rogala
- Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
| | - Paweł J Kowalczyk
- Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
| | - Mariusz Zdrojek
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
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14
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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024; 124:10112-10191. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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15
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Li H, Zhang Y, Liu F, Lu J. Monolayer SnS 2 Schottky barrier field effect transistors: effects of electrodes. NANOSCALE 2024. [PMID: 39248678 DOI: 10.1039/d4nr02419b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/10/2024]
Abstract
Achieving Ohmic contacts with low resistance is quite desirable for two-dimensional (2D) Schottky barrier field effect transistors (SBFETs). We verify the electrode effect on monolayer (ML) SnS2 SBFETs using ab initio calculations. With the aforeselected ML electrodes from matching lattices and work functions, we obtain n-type Ohmic contacts or quasi-Ohmic contacts to ML SnS2 with ML 1T-NbTe2, Sc2NF2, Mo2NF2, Nb2CF2, and graphene electrodes. The n-type ML SnS2 SBFET with the Ohmic-contact 1T-NbTe2 electrode exhibits remarkably better device performance than that with a Schottky-contact 2H-NbTe2 electrode, and their on-state currents of 629/1048 μA μm-1, delay times of 0.236/0.169 ps, and power dissipations of 0.074/0.089 fJ μm-1 exceed the International Roadmap for Devices and Systems targets for low-power/high-performance application. This study reports on Ohmic-contact electrodes for n-type ML SnS2 SBFETs and can give hints for future theoretical and experimental studies on 2D SBFETs.
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Affiliation(s)
- Hong Li
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
| | - Yunfeng Zhang
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
| | - Fengbin Liu
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China.
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, P. R. China
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16
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Zhang X, Xu J, Zhi A, Wang J, Wang Y, Zhu W, Han X, Tian X, Bai X, Sun B, Wei Z, Zhang J, Wang K. Low-Defect-Density Monolayer MoS 2 Wafer by Oxygen-Assisted Growth-Repair Strategy. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2408640. [PMID: 39244733 DOI: 10.1002/advs.202408640] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2024] [Indexed: 09/10/2024]
Abstract
Atomic chalcogen vacancy is the most commonly observed defect category in two dimensional (2D) transition-metal dichalcogenides, which can be detrimental to the intrinsic properties and device performance. Here a low-defect density, high-uniform, wafer-scale single crystal epitaxial technology by in situ oxygen-incorporated "growth-repair" strategy is reported. For the first time, the oxygen-repairing efficiency on MoS2 monolayers at atomic scale is quantitatively evaluated. The sulfur defect density is greatly reduced from (2.71 ± 0.65) × 1013 down to (4.28 ± 0.27) × 1012 cm-2, which is one order of magnitude lower than reported as-grown MoS2. Such prominent defect deduction is owing to the kinetically more favorable configuration of oxygen substitution and an increase in sulfur vacancy formation energy around oxygen-incorporated sites by the first-principle calculations. Furthermore, the sulfur vacancies induced donor defect states is largely eliminated confirmed by quenched defect-related emission. The devices exhibit improved carrier mobility by more than three times up to 65.2 cm2 V-1 s-1 and lower Schottky barrier height reduced by half (less than 20 meV), originating from the suppressed Fermi-level pinning effect from disorder-induced gap state. The work provides an effective route toward engineering the intrinsic defect density and electronic states through modulating synthesis kinetics of 2D materials.
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Affiliation(s)
- Xiaomin Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiahan Xu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Aomiao Zhi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wenkai Zhu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xingjie Han
- School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Xuezeng Tian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Baoquan Sun
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhongming Wei
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jing Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100049, China
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17
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Kong L, Liu H, Wang X, Abbas A, Tang L, Han M, Li W, Lu Z, Lu D, Ma X, Liu Y, Liang Q. Precisely Tailoring WSe 2 Polarity via van der Waals Bismuth-Gold Modulated Contact. NANO LETTERS 2024; 24:10949-10956. [PMID: 39186014 DOI: 10.1021/acs.nanolett.4c02848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/27/2024]
Abstract
Creating high-quality contacts between high-melting-point metals and delicate two-dimensional (2D) semiconductors poses a critical challenge to polarity control due to inevitable chemical disorder and Fermi-level pinning observed in the contact regions. Here, we report a van der Waals (vdW) integration strategy to precisely tailor the WSe2 polarity by meticulously modulating metal contact compositions. Controlling the low-melting-point bismuth (Bi) thickness effectively modulates the Bi/Au dominant contact with WSe2. This facilitates the precise polarity transformation between n-type, ambipolar, and p-type, with exceptional field-effect mobilities of 200 cm2 V-1 s-1 for electrons and 136 cm2 V-1 s-1 for holes. Within this vdW geometry, we further demonstrate the fundamental electrical components such as diodes and complementary inverters with enhanced rectification ratios and voltage gains. Our results showcase an effective and compatible with mass manufacturing method for precise polarity modulation of 2D semiconductors, providing a promising pathway toward large-scale high-performance 2D electronics and integrated circuits.
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Affiliation(s)
- Lingan Kong
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Hao Liu
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Xiaowei Wang
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Aumber Abbas
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Lei Tang
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Mengjiao Han
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Wenbo Li
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiuliang Ma
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Qijie Liang
- Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China
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18
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Han B, Samorì P. Engineering the Interfacing of Molecules with 2D Transition Metal Dichalcogenides: Enhanced Multifunctional Electronics. Acc Chem Res 2024; 57:2532-2545. [PMID: 39159399 DOI: 10.1021/acs.accounts.4c00338] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
ConspectusEngineering all interfaces between different components in electronic devices is the key to control and optimize fundamental physical processes such as charge injection at metal-semiconductor interfaces, gate modulation at the dielectric-semiconductor interface, and carrier modulation at semiconductor-environment interfaces. The use of two-dimensional (2D) crystals as semiconductors, by virtue of their atomically flat dangling bond-free structures, can facilitate the tailoring of such interfaces effectively. In this context, 2D transition metal dichalcogenides (TMDs) have garnered tremendous attention over the past two decades owing to their exclusive and outstanding physical and chemical characteristics such as their strong light-matter interactions and high charge mobility. These properties position them as promising building blocks for next-generation semiconductor materials. The combination of their large specific surface area, unique electronic structure, and properties highly sensitive to environmental changes makes 2D TMDs appealing platforms for applications in optoelectronics and sensing. While a broad arsenal of TMDs has been made available that exhibit a variety of electronic properties, the latter are unfortunately hardly tunable. To overcome this problem, the controlled functionalization of TMDs with molecules and assemblies thereof represents a most powerful strategy to finely tune their surface characteristics for electronics. Such functionalization can be used not only to encapsulate the electronic material, therefore enhancing its stability in air, but also to impart dynamic, stimuli-responsive characteristics to TMDs and to selectively recognize the presence of a given analyte in the environment, demonstrating unprecedented application potential.In this Account, we highlight the most enlightening recent progress made on the interface engineering in 2D TMD-based electronic devices via covalent and noncovalent functionalization with suitably designed molecules, underlining the remarkable synergies achieved. While electrode functionalization allows modulating charge injection and extraction, the functionalization of the dielectric substrate enables tuning of the carrier concentration in the device channel, and the functionalization of the upper surface of 2D TMDs allows screening the interaction with the environment and imparts molecular functionality to the devices, making them versatile for various applications. The tailored interfaces enable enhanced device performance and open up avenues for practical applications. This Account specifically focuses on our recent endeavor in the unusual properties conferred to 2D TMDs through the functionalization of their interfaces with stimuli-responsive molecules or molecular assemblies. This includes electrode-functionalized devices with modulable performance and charge carriers, molecular-bridged TMD network devices with overall enhanced electrical properties, sensor devices that are highly responsive to changes in the external environment, in particular, electrochemically switchable transistors that react to external electrochemical signals, optically switchable transistors that are sensitive to external light inputs, and multiresponsive transistors that simultaneously respond to multiple external stimuli including optical, electrical, redox, thermal, and magnetic inputs and their application in the development of unprecedented memories, artificial synapses, and logic inverters. By presenting the current challenges, opportunities, and prospects in this blooming research field, we will discuss the powerful integration of such strategies for next-generation electronic digital devices and logic circuitries, outlining future directions and potential breakthroughs in interface engineering.
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Affiliation(s)
- Bin Han
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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19
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Hu X, Yu Chen G, Luan Y, Tang T, Liang Y, Ren B, Chen L, Zhao Y, Zhang Q, Huang D, Sun X, Cheng YF, Ou JZ. Flexoelectricity Modulated Electron Transport of 2D Indium Oxide. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2404272. [PMID: 38953411 PMCID: PMC11434226 DOI: 10.1002/advs.202404272] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2024] [Revised: 06/04/2024] [Indexed: 07/04/2024]
Abstract
The phenomenon of flexoelectricity, wherein mechanical deformation induces alterations in the electron configuration of metal oxides, has emerged as a promising avenue for regulating electron transport. Leveraging this mechanism, stress sensing can be optimized through precise modulation of electron transport. In this study, the electron transport in 2D ultra-smooth In2O3 crystals is modulated via flexoelectricity. By subjecting cubic In2O3 (c-In2O3) crystals to significant strain gradients using an atomic force microscope (AFM) tip, the crystal symmetry is broken, resulting in the separation of positive and negative charge centers. Upon applying nano-scale stress up to 100 nN, the output voltage and power values reach their maximum, e.g. 2.2 mV and 0.2 pW, respectively. The flexoelectric coefficient and flexocoupling coefficient of c-In2O3 are determined as ≈0.49 nC m-1 and 0.4 V, respectively. More importantly, the sensitivity of the nano-stress sensor upon c-In2O3 flexoelectric effect reaches 20 nN, which is four to six orders smaller than that fabricated with other low dimensional materials based on the piezoresistive, capacitive, and piezoelectric effect. Such a deformation-induced polarization modulates the band structure of c-In2O3, significantly reducing the Schottky barrier height (SBH), thereby regulating its electron transport. This finding highlights the potential of flexoelectricity in enabling high-performance nano-stress sensing through precise control of electron transport.
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Affiliation(s)
- Xinyi Hu
- Key Laboratory of Advanced Technologies of MaterialsMinistry of EducationSchool of Materials Science and EngineeringSouthwest Jiaotong UniversityChengdu610031China
| | - Guan Yu Chen
- Key Laboratory of Advanced Technologies of MaterialsMinistry of EducationSchool of Materials Science and EngineeringSouthwest Jiaotong UniversityChengdu610031China
| | - Yange Luan
- School of EngineeringRMIT UniversityMelbourne3000Australia
| | - Tao Tang
- Key Laboratory of Advanced Technologies of MaterialsMinistry of EducationSchool of Materials Science and EngineeringSouthwest Jiaotong UniversityChengdu610031China
| | - Yi Liang
- Key Laboratory of Advanced Technologies of MaterialsMinistry of EducationSchool of Materials Science and EngineeringSouthwest Jiaotong UniversityChengdu610031China
| | - Baiyu Ren
- Key Laboratory of Advanced Technologies of MaterialsMinistry of EducationSchool of Materials Science and EngineeringSouthwest Jiaotong UniversityChengdu610031China
| | - Liguo Chen
- School of Mechanical and Electric Engineering Jiangsu Provincial Key Laboratory of Advanced RoboticsSoochow UniversitySuzhou215123China
| | - Yulong Zhao
- State Key Laboratory for Manufacturing Systems EngineeringSchool of Mechanical EngineeringXi'an Jiaotong UniversityXi'an710049China
| | - Qi Zhang
- State Key Laboratory for Manufacturing Systems EngineeringSchool of Mechanical EngineeringXi'an Jiaotong UniversityXi'an710049China
| | - Dong Huang
- Department of PhysicsThe University of Hong KongHong Kong999077China
| | - Xiao Sun
- Inorganic ChemistryUniversity of KoblenzUniversitätsstraße 156070KoblenzGermany
| | - Yin Fen Cheng
- Institute of Advanced StudyChengdu UniversityChengdu610106China
| | - Jian Zhen Ou
- Key Laboratory of Advanced Technologies of MaterialsMinistry of EducationSchool of Materials Science and EngineeringSouthwest Jiaotong UniversityChengdu610031China
- School of EngineeringRMIT UniversityMelbourne3000Australia
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20
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Yan Z, Ouyang J, Wu B, Liu C, Wang H, Wang A, Li Z. Nonmetallic modified zero-valent iron for remediating halogenated organic compounds and heavy metals: A comprehensive review. ENVIRONMENTAL SCIENCE AND ECOTECHNOLOGY 2024; 21:100417. [PMID: 38638605 PMCID: PMC11024576 DOI: 10.1016/j.ese.2024.100417] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/06/2023] [Revised: 03/15/2024] [Accepted: 03/16/2024] [Indexed: 04/20/2024]
Abstract
Zero Valent Iron (ZVI), an ideal reductant treating persistent pollutants, is hampered by issues like corrosion, passivation, and suboptimal utilization. Recent advancements in nonmetallic modified ZVI (NM-ZVI) show promising potential in circumventing these challenges by modifying ZVI's surface and internal physicochemical properties. Despite its promise, a thorough synthesis of research advancements in this domain remains elusive. Here we review the innovative methodologies, regulatory principles, and reduction-centric mechanisms underpinning NM-ZVI's effectiveness against two prevalent persistent pollutants: halogenated organic compounds and heavy metals. We start by evaluating different nonmetallic modification techniques, such as liquid-phase reduction, mechanical ball milling, and pyrolysis, and their respective advantages. The discussion progresses towards a critical analysis of current strategies and mechanisms used for NM-ZVI to enhance its reactivity, electron selectivity, and electron utilization efficiency. This is achieved by optimizing the elemental compositions, content ratios, lattice constants, hydrophobicity, and conductivity. Furthermore, we propose novel approaches for augmenting NM-ZVI's capability to address complex pollution challenges. This review highlights NM-ZVI's potential as an alternative to remediate water environments contaminated with halogenated organic compounds or heavy metals, contributing to the broader discourse on green remediation technologies.
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Affiliation(s)
- Zimin Yan
- State Key Laboratory of Urban Water Resource and Environment, School of Environment, Harbin Institute of Technology, Harbin, 150090, PR China
| | - Jia Ouyang
- State Key Laboratory of Urban Water Resource and Environment, School of Environment, Harbin Institute of Technology, Harbin, 150090, PR China
| | - Bin Wu
- State Key Laboratory of Urban Water Resource and Environment, School of Environment, Harbin Institute of Technology, Harbin, 150090, PR China
| | - Chenchen Liu
- State Key Laboratory of Urban Water Resource and Environment, School of Environment, Harbin Institute of Technology, Harbin, 150090, PR China
| | - Hongcheng Wang
- State Key Laboratory of Urban Water Resource and Environment, School of Civil and Environmental Engineering, Harbin Institute of Technology Shenzhen, Shenzhen, 518055, PR China
| | - Aijie Wang
- State Key Laboratory of Urban Water Resource and Environment, School of Civil and Environmental Engineering, Harbin Institute of Technology Shenzhen, Shenzhen, 518055, PR China
| | - Zhiling Li
- State Key Laboratory of Urban Water Resource and Environment, School of Environment, Harbin Institute of Technology, Harbin, 150090, PR China
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21
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Zhou X, Shen Q, Wang Y, Dai Y, Chen Y, Wu K. Surface and interfacial sciences for future technologies. Natl Sci Rev 2024; 11:nwae272. [PMID: 39280082 PMCID: PMC11394106 DOI: 10.1093/nsr/nwae272] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2024] [Revised: 07/15/2024] [Accepted: 08/01/2024] [Indexed: 09/18/2024] Open
Abstract
Physical science has undergone an evolutional transition in research focus from solid bulks to surfaces, culminating in numerous prominent achievements. Currently, it is experiencing a new exploratory phase-interfacial science. Many a technology with a tremendous impact is closely associated with a functional interface which delineates the boundary between disparate materials or phases, evokes complexities that surpass its pristine comprising surfaces, and thereby unveils a plethora of distinctive properties. Such an interface may generate completely new or significantly enhanced properties. These specific properties are closely related to the interfacial states formed at the interfaces. Therefore, establishing a quantitative relationship between the interfacial states and their functionalities has become a key scientific issue in interfacial science. However, interfacial science also faces several challenges such as invisibility in characterization, inaccuracy in calculation, and difficulty in precise construction. To tackle these challenges, people must develop new strategies for precise detection, accurate computation, and meticulous construction of functional interfaces. Such strategies are anticipated to provide a comprehensive toolbox tailored for future interfacial science explorations and thereby lay a solid scientific foundation for several key future technologies.
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Affiliation(s)
- Xiong Zhou
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Qian Shen
- Department of Interdisciplinary Sciences, National Natural Science Foundation of China, Beijing 100085, China
| | - Yongfeng Wang
- School of Electronics, Peking University, Beijing 100871, China
| | - Yafei Dai
- Department of Interdisciplinary Sciences, National Natural Science Foundation of China, Beijing 100085, China
| | - Yongjun Chen
- Department of Interdisciplinary Sciences, National Natural Science Foundation of China, Beijing 100085, China
| | - Kai Wu
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
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22
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Chen S, Li B, Dai C, Zhu L, Shen Y, Liu F, Deng S, Ming F. Controlling Gold-Assisted Exfoliation of Large-Area MoS 2 Monolayers with External Pressure. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1418. [PMID: 39269080 PMCID: PMC11397389 DOI: 10.3390/nano14171418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2024] [Revised: 08/29/2024] [Accepted: 08/29/2024] [Indexed: 09/15/2024]
Abstract
Gold-assisted exfoliation can fabricate centimeter- or larger-sized monolayers of van der Waals (vdW) semiconductors, which is desirable for their applications in electronic and optoelectronic devices. However, there is still a lack of control over the exfoliation processes and a limited understanding of the atomic-scale mechanisms. Here, we tune the MoS2-Au interface using controlled external pressure and reveal two atomic-scale prerequisites for successfully producing large-area monolayers of MoS2. The first is the formation of strong MoS2-Au interactions to anchor the top MoS2 monolayer to the Au surface. The second is the integrity of the covalent network of the monolayer, as the majority of the monolayer is non-anchored and relies on the covalent network to be exfoliated from the bulk MoS2. Applying pressure or using smoother Au films increases the MoS2-Au interaction, but may cause the covalent network of the MoS2 monolayer to break due to excessive lateral strain, resulting in nearly zero exfoliation yield. Scanning tunneling microscopy measurements of the MoS2 monolayer-covered Au show that even the smallest atomic-scale imperfections can disrupt the MoS2-Au interaction. These findings can be used to develop new strategies for fabricating vdW monolayers through metal-assisted exfoliation, such as in cases involving patterned or non-uniform surfaces.
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Affiliation(s)
- Sikai Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
| | - Bingrui Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
| | - Chaoqi Dai
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
| | - Lemei Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
| | - Yan Shen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
| | - Fei Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
| | - Fangfei Ming
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
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23
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Liang M, Yan H, Wazir N, Zhou C, Ma Z. Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1408. [PMID: 39269071 PMCID: PMC11397490 DOI: 10.3390/nano14171408] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2024] [Revised: 08/23/2024] [Accepted: 08/26/2024] [Indexed: 09/15/2024]
Abstract
As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.
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Affiliation(s)
- Meng Liang
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Han Yan
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Nasrullah Wazir
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Changjian Zhou
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Zichao Ma
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
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24
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Mahlouji R, Zhang Y, Verheijen MA, Karwal S, Hofmann JP, Kessels WMM, Bol AA. Influence of High-κ Dielectrics Integration on ALD-Based MoS 2 Field-Effect Transistor Performance. ACS APPLIED NANO MATERIALS 2024; 7:18786-18800. [PMID: 39206351 PMCID: PMC11348321 DOI: 10.1021/acsanm.4c02214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Revised: 07/21/2024] [Accepted: 07/30/2024] [Indexed: 09/04/2024]
Abstract
The integration of high-κ dielectrics on MoS2 field-effect transistors (FETs) is essential for the realization of MoS2 in ultrascaled nanoelectronic devices and circuits. Most studies covering this topic are based on exfoliated MoS2 flakes or chemical vapor deposition (CVD) grown MoS2 films, whereas other techniques, such as atomic layer deposition (ALD), are also gaining attention for the growth of MoS2 in recent years. In this work, we grow large-area MoS2 by means of plasma-enhanced (PE-)ALD and evaluate the influence of high-κ dielectrics on the properties of ALD-based MoS2 FETs through electrical characterization combined with surface-chemical and high-resolution scanning transmission electron microscopy (HR-STEM) analyses. We grow HfO x , AlO x , or both by means of PE-ALD or thermal ALD on our fabricated devices and show that, in addition to the dielectric constant, three other major parameters related to the processing of the dielectrics can simultaneously affect the MoS2 FET electrical characteristics and govern its doping. These parameters are the stoichiometry of the dielectric, its carbon impurity content, and the degree to which the MoS2 surface oxidizes upon the dielectric growth. When grown at 100 °C, our HfO x films are oxygen-vacant whereas our AlO x films are oxygen-rich. In addition, carbon impurities are incorporated into the dielectrics at low deposition temperatures, being one of the likely causes of the MoS2 FET overall n-type performance in all of the studied cases. Our investigations also reveal that PE-ALD of HfO x or AlO x oxidizes the MoS2 surface, whereas thermal ALD AlO x leaves MoS2 almost intact. In this respect, if thermal ALD AlO x of proper thickness is grown between MoS2 and HfO x , it can reduce the degree to which the MoS2 surface oxidizes by HfO x and meanwhile improve the total dielectric constant, altogether leading to the most optimal electrical performance in ALD-based MoS2 FETs.
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Affiliation(s)
- Reyhaneh Mahlouji
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Yue Zhang
- Laboratory
of Inorganic Materials and Catalysis, Department of Chemical Engineering
and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Marcel A. Verheijen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
- Eurofins
Materials Science, High
Tech Campus 11, 5656 AE Eindhoven, The Netherlands
| | - Saurabh Karwal
- Netherlands
Organization for Applied Scientific Research (TNO), 2628 CK Delft, The Netherlands
| | - Jan P. Hofmann
- Laboratory
of Inorganic Materials and Catalysis, Department of Chemical Engineering
and Chemistry, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
- Surface
Science Laboratory, Department of Materials and Earth Sciences, Technical University of Darmstadt, Otto-Berndt-Strasse 3, 64287 Darmstadt, Germany
| | - Wilhelmus M. M. Kessels
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Ageeth A. Bol
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
- Department
of Chemistry, University of Michigan, 930 N. University Ave., Ann Arbor, Michigan 48109, United States
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25
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Liu Z, Sun Z, Qu X, Nie K, Yang Y, Li B, Chong S, Yin Z, Huang W. Solution-Processable Microstructuring of 1T'-Phase Janus MoSSe Monolayers for Boosted Hydrogen Production. J Am Chem Soc 2024; 146:23252-23264. [PMID: 39120959 DOI: 10.1021/jacs.4c05692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/11/2024]
Abstract
Janus monolayers of transition metal dichalcogenides (TMDs) offer versatile applications due to their tunable polymorphisms. While previous studies focused on conventional 2H-phase Janus monolayers, the scalable synthesis of an unconventional 1T' phase remains challenging. We present a novel solution strategy for fabricating Janus 1T'-MoOSe and MoSSe monolayers by growing sandwiched Se-Mo-O/S shells onto Au nanocores. The Janus Au@1T'-MoSSe catalyst exhibits superior electrocatalytic hydrogen evolution reaction (HER) activity compared to 1T'-MoS2, -MoSe2, and -MoOSe, attributed to its unique electronic structure and intrinsic strain. Remarkably, photoexciting the nanoplasmonic Au cores further enhances the HER via a localized surface plasmon (LSP) effect that drives hot electron injection into surface sulfur vacancies of 1T'-MoSSe monolayer shells, accelerating proton reduction. This synergistic activation of anion vacancies by internal strain and external light-induced Au LSPs, coupled with our scalable synthesis, provides a pathway for developing tailorable polymorphic Janus TMDs for specific applications.
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Affiliation(s)
- Zhengqing Liu
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
| | - Zhehao Sun
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Xiaoyan Qu
- Frontier Institute of Science and Technology, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Kunkun Nie
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
| | - Yawei Yang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, and Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Binjie Li
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
| | - Shaokun Chong
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
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Kang M, Hong W, Lee I, Park S, Park C, Bae S, Lim H, Choi SY. Tunable Doping Strategy for Few-Layer MoS 2 Field-Effect Transistors via NH 3 Plasma Treatment. ACS APPLIED MATERIALS & INTERFACES 2024; 16:43849-43859. [PMID: 39135314 DOI: 10.1021/acsami.4c08549] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Molybdenum disulfide (MoS2) is a promising candidate for next-generation transistor channel materials, boasting outstanding electrical properties and ultrathin structure. Conventional ion implantation processes are unsuitable for atomically thin two-dimensional (2D) materials, necessitating nondestructive doping methods. We proposed a novel approach: tunable n-type doping through sulfur vacancies (VS) and p-type doping by nitrogen substitution in MoS2, controlled by the duration of NH3 plasma treatment. Our results reveal that NH3 plasma exposure of 20 s increases the 2D sheet carrier density (n2D) in MoS2 field-effect transistors (FETs) by +4.92 × 1011 cm-2 at a gate bias of 0 V, attributable to sulfur vacancy generation. Conversely, treatment of 40 s reduces n2D by -3.71 × 1011 cm-2 due to increased nitrogen doping. X-ray photoelectron spectroscopy, Raman spectroscopy, and photoluminescence analyses corroborate these electrical characterization results, indicating successful n- and p-type doping. Temperature-dependent measurements show that the Schottky barrier height at the metal-semiconductor contact decreases by -31 meV under n-type conditions and increases by +37 meV for p-type doping. This study highlights NH3 plasma treatment as a viable doping method for 2D materials in electronic and optoelectronic device engineering.
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Affiliation(s)
- Mingu Kang
- School of Electrical Engineering, Graduate School of Semiconductor Technology, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Woonggi Hong
- School of Electronics and Electrical Engineering, Convergence Semiconductor Research Center, Dankook University, 152 Jukjeon-ro, Suji-gu, Yongin-si, Gyeonggi-do 16890, Republic of Korea
| | - Inseong Lee
- School of Electrical Engineering, Graduate School of Semiconductor Technology, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Seohak Park
- School of Electrical Engineering, Graduate School of Semiconductor Technology, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Cheolmin Park
- School of Electrical Engineering, Graduate School of Semiconductor Technology, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sanggeun Bae
- School of Electrical Engineering, Graduate School of Semiconductor Technology, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyeongjin Lim
- School of Electrical Engineering, Graduate School of Semiconductor Technology, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sung-Yool Choi
- School of Electrical Engineering, Graduate School of Semiconductor Technology, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
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27
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Sun Z, Kim SY, Cai J, Shen J, Lan HY, Tan Y, Wang X, Shen C, Wang H, Chen Z, Wallace RM, Appenzeller J. Low Contact Resistance on Monolayer MoS 2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts. ACS NANO 2024; 18:22444-22453. [PMID: 39110477 DOI: 10.1021/acsnano.4c07267] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
Contact engineering on monolayer layer (ML) semiconducting transition metal dichalcogenides (TMDs) is considered the most challenging problem toward using these materials as a transistor channel in future advanced technology nodes. The typically observed strong Fermi-level pinning induced in part by the reaction of the source/drain contact metal and the ML TMD frequently results in a large Schottky barrier height, which limits the electrical performance of ML TMD field-effect transistors (FETs). However, at a microscopic level, little is known about how interface defects or reaction sites impact the electrical performance of ML TMD FETs. In this work, we have performed statistically meaningful electrical measurements on at least 120 FETs combined with careful surface analysis to unveil contact resistance dependence on interface chemistry. In particular, we achieved a low contact resistance for ML MoS2 FETs with ultrahigh-vacuum (UHV, 3 × 10-11 mbar) deposited Ni contacts, ∼500 Ω·μm, which is 5 times lower than the contact resistance achieved when deposited under high-vacuum (HV, 3 × 10-6 mbar) conditions. These electrical results strongly correlate with our surface analysis observations. X-ray photoelectron spectroscopy (XPS) revealed significant bonding species between Ni and MoS2 under UHV conditions compared to that under HV. We also studied the Bi/MoS2 interface under UHV and HV deposition conditions. Different from the case of Ni, we do not observe a difference in contact resistance or interface chemistry between contacts deposited under UHV and HV. Finally, this article also explores the thermal stability and reliability of the two contact metals employed here.
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Affiliation(s)
- Zheng Sun
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Seong Yeoul Kim
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Jun Cai
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jianan Shen
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Hao-Yu Lan
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yuanqiu Tan
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Xinglu Wang
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Chao Shen
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zhihong Chen
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Robert M Wallace
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Joerg Appenzeller
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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28
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Kim B, Lee S, Park JH. Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors. NANOSCALE HORIZONS 2024; 9:1417-1431. [PMID: 38973382 DOI: 10.1039/d4nh00030g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2024]
Abstract
2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the potential to be alternative channel materials for advanced 3D field-effect transistors, such as gate-all-around field-effect-transistors (GAAFETs) and complementary field-effect-transistors (C-FETs), due to their inherent atomic thinness, moderate mobility, and short scaling lengths. However, 2D semiconductors encounter several technological challenges, especially the high contact resistance issue between 2D semiconductors and metals. This review provides a comprehensive overview of the high contact resistance issue in 2D semiconductors, including its physical background and the efforts to address it, with respect to their applicability to GAAFET structures.
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Affiliation(s)
- Byeongchan Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
| | - Seojoo Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16417, Korea
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29
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Li C, Zheng F, Min J, Yang N, Chang YM, Liu H, Zhang Y, Yang P, Yu Q, Li Y, Luo Z, Aljarb A, Shih K, Huang JK, Li LJ, Wan Y. Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404923. [PMID: 39149776 DOI: 10.1002/adma.202404923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2024] [Revised: 07/01/2024] [Indexed: 08/17/2024]
Abstract
Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer-scale single-crystal films. Both step-edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive. In this work, through the molybdenum disulfide (MoS2) growth on C/M sapphire, it is demonstrated that controlling the sulfur evaporation rate is crucial for dictating the switch between atomic-edge guided epitaxy and van der Waals epitaxy. Low-concentration sulfur condition preserves O/Al-terminated step edges, fostering atomic-edge epitaxy, while high-concentration sulfur leads to S-terminated edges, preferring van der Waals epitaxy. These experiments reveal that on a 2 in. wafer, the van der Waals epitaxy mechanism achieves better control in MoS2 alignment (≈99%) compared to the step edge mechanism (<85%). These findings shed light on the nuanced role of atomic-level thermodynamics in controlling nucleation modes of TMDCs, thereby providing a pathway for the precise fabrication of single-crystal 2D materials on a wafer scale.
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Affiliation(s)
- Chenyang Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Fangyuan Zheng
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Jiacheng Min
- Department of Civil Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Ni Yang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yu-Ming Chang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Haomin Liu
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yuxiang Zhang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Pengfei Yang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Qinze Yu
- Department of Computer Science and Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yu Li
- Department of Computer Science and Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, China
- The CUHK Shenzhen Research Institute, Hi-Tech Park, Nanshan, Shenzhen, 518057, China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Hong Kong, 999077, China
| | - Areej Aljarb
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
- Department of Physics, King Abdulaziz University, Jeddah, 21589, Kingdom of Saudi Arabia
| | - Kaimin Shih
- Department of Civil Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Jing-Kai Huang
- Department of Systems Engineering, City University of Hong Kong, Hong Kong, 999077, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yi Wan
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
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Bang S, Kang W, Kim D, Suh HC, Kim DH, Kwon C, Jo J, Kim JH, Ko H, Kim KK, Ahn J, Jeong MS. Harnessing Persistent Photocurrent in a 2D Semiconductor-Polymer Hybrid Structure: Electron Trapping and Fermi Level Modulation for Optoelectronic Memory. NANO LETTERS 2024; 24:9889-9897. [PMID: 38985008 DOI: 10.1021/acs.nanolett.4c02173] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2024]
Abstract
Recently, 2D semiconductor-based optoelectronic memory has been explored to overcome the limitations of conventional von Neumann architectures by integrating optical sensing and data storage into one device. Persistent photocurrent (PPC), essential for optoelectronic memory, originates from charge carrier trapping according to the Shockley-Read-Hall (SRH) model in 2D semiconductors. The quasi-Fermi level position influences the activation of charge-trapping sites. However, the correlation between quasi-Fermi level modulations and PPC in 2D semiconductors has not been extensively studied. In this study, we demonstrate optoelectronic memory based on a 2D semiconductor-polymer hybrid structure and confirm that the underlying mechanism is charge trapping, as the SRH model explains. Under light illumination, electrons transfer from polyvinylpyrrolidone to p-type tungsten diselenide, resulting in high-level injection and majority carrier-type transitions. The quasi-Fermi level shifts upward with increasing temperature, improving PPC and enabling optoelectronic memory at 433 K. Our findings offer valuable insights into optimizing 2D semiconductor-based optoelectronic memory.
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Affiliation(s)
- Seungho Bang
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Wooyoung Kang
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Dohyeong Kim
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Hyeong Chan Suh
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Dong Hyeon Kim
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Chan Kwon
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Jieun Jo
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Ji-Hong Kim
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Hayoung Ko
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jinho Ahn
- Division of Materials Science and Engineering, Hanyang University (HYU), Seoul 04763, Republic of Korea
| | - Mun Seok Jeong
- Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea
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31
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Liu X, Erbas B, Conde-Rubio A, Rivano N, Wang Z, Jiang J, Bienz S, Kumar N, Sohier T, Penedo M, Banerjee M, Fantner G, Zenobi R, Marzari N, Kis A, Boero G, Brugger J. Deterministic grayscale nanotopography to engineer mobilities in strained MoS 2 FETs. Nat Commun 2024; 15:6934. [PMID: 39138213 PMCID: PMC11322165 DOI: 10.1038/s41467-024-51165-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Accepted: 07/30/2024] [Indexed: 08/15/2024] Open
Abstract
Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remains a critical challenge. To address this issue, we propose the controlled introduction of localized tensile strain as an effective means to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van der Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that monolayer MoS2 FETs under tensile strain achieve an 8-fold increase in on-state current, reaching mobilities of 185 cm²/Vs at room temperature, in good agreement with theoretical calculations. The present work on nanotopographic grayscale surface engineering and the use of high-quality dielectric materials has the potential to find application in the nanofabrication of photonic and nanoelectronic devices.
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Affiliation(s)
- Xia Liu
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland.
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China.
| | - Berke Erbas
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Ana Conde-Rubio
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
- Institute of Materials Science of Barcelona ICMAB-CSIC, Campus UAB, 08193, Bellaterra, Spain
| | - Norma Rivano
- Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
- National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Zhenyu Wang
- Laboratory of Nanoscale Electronics and Structures, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Jin Jiang
- Laboratory of Quantum Physics, Topology and Correlations, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Siiri Bienz
- Department of Chemistry and Applied Biosciences, ETH Zurich, 8093, Zurich, Switzerland
| | - Naresh Kumar
- Department of Chemistry and Applied Biosciences, ETH Zurich, 8093, Zurich, Switzerland
| | - Thibault Sohier
- Laboratoire Charles Coulomb (L2C), Université de Montpellier, CNRS, Montpellier, France
| | - Marcos Penedo
- Laboratory for Bio- and Nano- Instrumentation, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Mitali Banerjee
- Laboratory of Quantum Physics, Topology and Correlations, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Georg Fantner
- Laboratory for Bio- and Nano- Instrumentation, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Renato Zenobi
- Department of Chemistry and Applied Biosciences, ETH Zurich, 8093, Zurich, Switzerland
| | - Nicola Marzari
- Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
- National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
- Laboratory for Materials Simulations, Paul Scherrer Institute, 5232, Villigen, Switzerland
| | - Andras Kis
- Laboratory of Nanoscale Electronics and Structures, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Giovanni Boero
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Juergen Brugger
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland.
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32
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Chen J, Sun MY, Wang ZH, Zhang Z, Zhang K, Wang S, Zhang Y, Wu X, Ren TL, Liu H, Han L. Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor. NANO-MICRO LETTERS 2024; 16:264. [PMID: 39120835 PMCID: PMC11315877 DOI: 10.1007/s40820-024-01461-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Accepted: 06/13/2024] [Indexed: 08/10/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.
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Affiliation(s)
- Jing Chen
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- BNRist, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Ming-Yuan Sun
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zhen-Hua Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zheng Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Kai Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Shuai Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China
| | - Xiaoming Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Hong Liu
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China.
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China.
- Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application, Jinan, 250100, People's Republic of China.
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33
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Vinh NV, Nguyen ST, Pham KD. Computational investigations of the metal/semiconductor NbS 2/boron phosphide van der Waals heterostructure: effects of an electric field. Dalton Trans 2024; 53:13022-13029. [PMID: 39028262 DOI: 10.1039/d4dt01454e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/20/2024]
Abstract
In this work, we design computationally the metal-semiconductor NbS2/BP heterostructure and investigate its atomic structure, electronic properties and contact barrier using first-principles prediction. Our results show that the M-S NbS2/BP heterostructure is energetically stable and is characterized by weak vdW interactions. Interestingly, we find that the combination of the metallic NbS2 and semiconducting BP layers leads to the formation of a M-S contact. The M-S NbS2/BP heterostructure exhibits a p-type Schottky contact and a low tunneling-specific resistivity of 3.98 × 10-10 Ω cm2, indicating that the metallic NbS2 can be considered as an efficient 2D electrical contact to the semiconducting BP layer to design NbS2/BP heterostructure-based electronic devices with high charge injection efficiency. The contact barrier and contact type in the M-S NbS2/BP heterostructure can be adjusted by applying an external electric field. The conversion from p-type ShC to n-type ShC can be achieved by applying a negative electric field, while the transformation from ShC to OhC type can be achieved under the application of a positive electric field. The conversion between p-type and n-type ShC and ShC to OhC type in the NbS2/BP heterostructure demonstrates that it can be considered as a promising material for next-generation electronic devices.
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Affiliation(s)
- Nguyen V Vinh
- Faculty of Information Technology, Ho Chi Minh City University of Economics and Finance, Ho Chi Minh City, Vietnam.
| | - Son-Tung Nguyen
- Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam.
| | - Khang D Pham
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam.
- School of Engineering & Technology, Duy Tan University, Da Nang 550000, Vietnam
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34
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Liu D, Liu Z, Gao X, Zhu J, Wang Z, Qiu R, Ren Q, Zhang Y, Zhang S, Zhang M. Hydrogen-Bonding Integrated Low-Dimensional Flexible Electronics Beyond the Limitations of van der Waals Contacts. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404626. [PMID: 38825781 DOI: 10.1002/adma.202404626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2024] [Revised: 05/24/2024] [Indexed: 06/04/2024]
Abstract
Van der Waals (vdW) integration enables clean contacts for low-dimensional electronic devices. The limitation remains; however, that an additional tunneling contact resistance occurs owing to the inherent vdW gap between the metal and the semiconductor. Here, it is demonstrated from theoretical calculations that stronger non-covalent hydrogen-bonding interactions facilitate electron tunneling and significantly reduce the contact resistance; thus, promising to break the limitations of the vdW contact. π-plane hydrogen-bonding contacts in surface-engineered MXene/carbon nanotube metal/semiconductor heterojunctions are realized, and an anomalous temperature-dependent tunneling resistance is observed. Low-dimensional flexible thin-film transistors integrated by hydrogen-bonding contacts exhibit both excellent flexibility and carrier mobility orders of magnitude higher than their counterparts with vdW contacts. This strategy demonstrates a scalable solution for realizing high-performance and low-power flexible electronics beyond vdW contacts.
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Affiliation(s)
- Dexing Liu
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Ziyi Liu
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Xinyu Gao
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Jiahao Zhu
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Zifan Wang
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Rui Qiu
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Qinqi Ren
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Yiming Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Shengdong Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
| | - Min Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
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35
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Zhu M, Yin H, Cao J, Xu L, Lu P, Liu Y, Ding L, Fan C, Liu H, Zhang Y, Jin Y, Peng LM, Jin C, Zhang Z. Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403743. [PMID: 38862115 DOI: 10.1002/adma.202403743] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Revised: 06/05/2024] [Indexed: 06/13/2024]
Abstract
Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field-effect transistors, but the perfect sp2 C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor for constructing complementary metal-oxide-semiconductor electronics. Most importantly, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) is first demonstrated based on an individual partial-filling CsPbBr3/CNT and exhibits a subthreshold swing of 35 mV dec-1 with a high on-state current of up to 4.9 µA per tube and an on/off current ratio of up to 105 at room temperature. The quasi-BG TFET based on the CsPbBr3/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption integrated circuits.
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Affiliation(s)
- Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
- School of Integrated Circuits, Nanjing University, Suzhou, Jiangsu, 210023, China
| | - Huimin Yin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Jiang Cao
- Institute of Microelectronics, Chinese Academy of Science, Beijing, 100029, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Peng Lu
- Institute of Microelectronics, Chinese Academy of Science, Beijing, 100029, China
| | - Yang Liu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Chenwei Fan
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Haiyang Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Yuanfang Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Yizheng Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
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Song H, Chen S, Sun X, Cui Y, Yildirim T, Kang J, Yang S, Yang F, Lu Y, Zhang L. Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403176. [PMID: 39031754 PMCID: PMC11348073 DOI: 10.1002/advs.202403176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/04/2024] [Indexed: 07/22/2024]
Abstract
By modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high-performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light-matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.
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Affiliation(s)
- Haizeng Song
- Henan Key Laboratory of Rare Earth Functional MaterialsZhoukou Normal UniversityZhoukou466001China
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shuai Chen
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Xueqian Sun
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Yichun Cui
- National Key Laboratory of Science and Technology on Test Physics and Numerical MathematicsBeijing100190China
| | - Tanju Yildirim
- Faculty of Science and EngineeringSouthern Cross UniversityEast LismoreNSW2480Australia
| | - Jian Kang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shunshun Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Fan Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Linglong Zhang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
- Laboratory of Solid State MicrostructuresNanjing UniversityNanjing210093China
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37
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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38
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Nguyen ST, Nguyen CV, Phuc HV, Hieu NN, Nguyen CQ. Achieving ultra-low contact barriers in MX 2/SiH (M = Nb, Ta; X = S, Se) metal-semiconductor heterostructures: first-principles prediction. NANOSCALE ADVANCES 2024:d4na00482e. [PMID: 39139713 PMCID: PMC11317907 DOI: 10.1039/d4na00482e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2024] [Accepted: 07/26/2024] [Indexed: 08/15/2024]
Abstract
Minimizing the contact barriers at the interface, forming between two different two-dimensional metals and semiconductors, is essential for designing high-performance optoelectronic devices. In this work, we design different types of metal-semiconductor heterostructures by combining 2D metallic MX2 (M = Nb, Hf; X = S, Se) and 2D semiconductor SiH and investigate systematically their electronic properties and contact characteristics using first principles calculations. We find that all the MX2/SiH (M = Nb, Ta; X = S, Se) heterostructures are energetically stable, suggesting that they could potentially be synthesized in the future. Furthermore, the generation of the MX2/SiH metal-semiconductor heterostructures leads to the formation of the Schottky contact with ultra-low Schottky barriers of a few tens of meV. This finding suggests that all the 2D MX2 (M = Nb, Ta; X = S, Se) metals act as effective electrical contact 2D materials to contact with the SiH semiconductor, enabling electronic devices with high charge injection efficiency. Furthermore, the tunneling resistivity of all the MX2/SiH (M = Nb, Ta; X = S, Se) MSHs is low, confirming that they exhibit high electron injection efficiency. Our findings underscore fundamental insights for the design of high-performance multifunctional Schottky devices based on the metal-semiconductor MX2/SiH heterostructures with ultra-low contact barriers and high electron injection efficiency.
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Affiliation(s)
- Son T Nguyen
- Faculty of Electrical Engineering, Hanoi University of Industry Hanoi 100000 Vietnam
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi 100000 Vietnam
| | - Huynh V Phuc
- Division of Physics, School of Education, Dong Thap University Cao Lanh 870000 Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
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39
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Alolaiyan O, Albawardi S, Alsaggaf S, Tabbakh T, DelRio FW, Amer MR. Unlocking High-Performance, Ultra-Low Power van der Waals Photo-Transistors: Toward Back-End-of-Line in-Sensor Machine Vision Applications. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39056344 DOI: 10.1021/acsami.4c07231] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2024]
Abstract
Recent reports on machine learning and machine vision (MV) devices have demonstrated the potential of two-dimensional (2D) materials and devices. Yet, scalable 2D devices are being challenged by contact resistance and Fermi level pinning (FLP), power consumption, and low-cost CMOS compatible lithography processes. To enable CMOS + 2D, it is essential to find a proper lithography strategy that can fulfill these requirements. Here, we explored a modified van der Waals (vdW) deposition lithography and demonstrated a relatively new class of van der Waals field effect transistors (vdW-FETs) based on 2D materials. This lithography strategy enabled us to unlock high-performance devices evident by high current on-off ratio (Ion/Ioff), high turn-on current density (Ion), and weak FLP. We utilized this approach to demonstrate a gate-tunable near-ideal diode using a MoS2/WSe2 heterojunction with an ideality factor of ∼1.65 and current rectification of 102. We finally demonstrated a highly sensitive, scalable, and ultralow power phototransistor using a MoS2/WSe2 vdW-FET for back-end-of-line integration. Our phototransistor exhibited the highest gate-tunable photoresponsivity achieved to date for white light detection with ultralow power dissipation, enabling ultrasensitive optoelectronic applications such as in-sensor MV. Our approach showed the great potential of modified vdW deposition lithography for back-end-of-line CMOS + 2D applications.
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Affiliation(s)
- Olaiyan Alolaiyan
- Center of Excellence for Green Nanotechnologies, Microelectronics and Semiconductor Institute, King Abdulaziz City for Science and Technology, Riyadh 11442, Saudi Arabia
| | - Shahad Albawardi
- Center of Excellence for Green Nanotechnologies, Microelectronics and Semiconductor Institute, King Abdulaziz City for Science and Technology, Riyadh 11442, Saudi Arabia
| | - Sarah Alsaggaf
- Center of Excellence for Green Nanotechnologies, Microelectronics and Semiconductor Institute, King Abdulaziz City for Science and Technology, Riyadh 11442, Saudi Arabia
| | - Thamer Tabbakh
- Center of Excellence for Green Nanotechnologies, Microelectronics and Semiconductor Institute, King Abdulaziz City for Science and Technology, Riyadh 11442, Saudi Arabia
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Frank W DelRio
- Material, Physical, and Chemical Sciences Center, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Moh R Amer
- Center of Excellence for Green Nanotechnologies, Microelectronics and Semiconductor Institute, King Abdulaziz City for Science and Technology, Riyadh 11442, Saudi Arabia
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
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40
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Lin YT, Hsu CH, Chou AS, Fong ZY, Chuu CP, Chang SJ, Hsu YW, Chou SA, Liew SL, Chiu TY, Hou FR, Ni IC, Hou DHV, Cheng CC, Radu IP, Wu CI. Antimony-Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel. NANO LETTERS 2024; 24:8880-8886. [PMID: 38981026 PMCID: PMC11273612 DOI: 10.1021/acs.nanolett.4c01436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Revised: 06/23/2024] [Accepted: 06/24/2024] [Indexed: 07/11/2024]
Abstract
We develop a novel metal contact approach using an antimony (Sb)-platinum (Pt) bilayer to mitigate Fermi-level pinning in 2D transition metal dichalcogenide channels. This strategy allows for control over the transport polarity in monolayer WSe2 devices. By adjustment of the Sb interfacial layer thickness from 10 to 30 nm, the effective work function of the contact/WSe2 interface can be tuned from 4.42 eV (p-type) to 4.19 eV (n-type), enabling selectable n-/p-FET operation in enhancement mode. The shift in effective work function is linked to Sb-Se bond formation and an emerging n-doping effect. This work demonstrates high-performance n- and p-FETs with a single WSe2 channel through Sb-Pt contact modulation. After oxide encapsulation, the maximum current density at |VD| = 1 V reaches 170 μA/μm for p-FET and 165 μA/μm for n-FET. This approach shows promise for cost-effective CMOS transistor applications using a single channel material and metal contact scheme.
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Affiliation(s)
- Yu-Tung Lin
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Ching-Hao Hsu
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Ang-Sheng Chou
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Zi-Yun Fong
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
| | - Chih-Piao Chuu
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Shu-Jui Chang
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Yu-Wei Hsu
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
| | - Sui-An Chou
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - San Lin Liew
- Quality
& Reliability, Taiwan Semiconductor
Manufacturing Company, Hsinchu 30091, Taiwan
| | - Ting-Ying Chiu
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
| | - Fa-Rong Hou
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
| | - I-Chih Ni
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
| | - Duen-Huei Vincent Hou
- Quality
& Reliability, Taiwan Semiconductor
Manufacturing Company, Hsinchu 30091, Taiwan
| | - Chao-Ching Cheng
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Iuliana P. Radu
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Chih-I Wu
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
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41
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Jin L, Wen J, Odlyzko M, Seaton N, Li R, Haratipour N, Koester SJ. High-Performance WS 2 MOSFETs with Bilayer WS 2 Contacts. ACS OMEGA 2024; 9:32159-32166. [PMID: 39072129 PMCID: PMC11270543 DOI: 10.1021/acsomega.4c04431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/09/2024] [Revised: 06/22/2024] [Accepted: 06/24/2024] [Indexed: 07/30/2024]
Abstract
WS2 is a promising transition-metal dichalcogenide (TMDC) for use as a channel material in extreme-scaled metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its monolayer thickness, high carrier mobility, and its potential for symmetric n-type and p-type MOSFET performance. However, the formation of stable, low-barrier-height contacts to monolayer TMDCs continues to be a challenge. This study introduces an innovative approach to realize high-performance WS2 MOSFETs by utilizing bilayer WS2 (2L-WS2) in the contact region grown through a two-step chemical vapor deposition process. The 2L-WS2 devices demonstrate a high I ON/I OFF ratio of 108 and a saturated drain current, I D(SAT), of 280 μA/μm (386 μA/μm) at room temperature (78 K), even while still using conventional metal (Pd or Ni) contacts. Devices featuring a 1L-WS2 channel and 2L-WS2 in the contact regions were also fabricated, and they exhibited performance comparable to that of 2L-WS2 devices. The devices also exhibit good stability with nearly identical performance after storage over a 13 month period. The study highlights the benefits of a hybrid channel thickness approach for TMDC transistors.
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Affiliation(s)
- Lun Jin
- Department
of Chemistry, University of Minnesota, 207 Pleasant Street SE, Minneapolis, Minnesota 55455, United States
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union St. SE, Minneapolis, Minnesota 55455, United States
| | - Jiaxuan Wen
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union St. SE, Minneapolis, Minnesota 55455, United States
| | - Michael Odlyzko
- College
of Science and Engineering Characterization Facility, Shepherd Laboratory, University of Minnesota, 100 Union St SE, Minneapolis, Minnesota 55455, United States
| | - Nicholas Seaton
- College
of Science and Engineering Characterization Facility, Shepherd Laboratory, University of Minnesota, 100 Union St SE, Minneapolis, Minnesota 55455, United States
| | - Ruixue Li
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union St. SE, Minneapolis, Minnesota 55455, United States
| | - Nazila Haratipour
- Components
Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Steven J. Koester
- Department
of Electrical and Computer Engineering, University of Minnesota, 200 Union St. SE, Minneapolis, Minnesota 55455, United States
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42
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Lee S, Song MK, Zhang X, Suh JM, Ryu JE, Kim J. Mixed-Dimensional Integration of 3D-on-2D Heterostructures for Advanced Electronics. NANO LETTERS 2024. [PMID: 39037750 DOI: 10.1021/acs.nanolett.4c02663] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
Two-dimensional (2D) materials have garnered significant attention due to their exceptional properties requisite for next-generation electronics, including ultrahigh carrier mobility, superior mechanical flexibility, and unusual optical characteristics. Despite their great potential, one of the major technical difficulties toward lab-to-fab transition exists in the seamless integration of 2D materials with classic material systems, typically composed of three-dimensional (3D) materials. Owing to the self-passivated nature of 2D surfaces, it is particularly challenging to achieve well-defined interfaces when forming 3D materials on 2D materials (3D-on-2D) heterostructures. Here, we comprehensively review recent progress in 3D-on-2D incorporation strategies, ranging from direct-growth- to layer-transfer-based approaches and from non-epitaxial to epitaxial integration methods. Their technological advances and obstacles are rigorously discussed to explore optimal, yet viable, integration strategies of 3D-on-2D heterostructures. We conclude with an outlook on mixed-dimensional integration processes, identifying key challenges in state-of-the-art technology and suggesting potential opportunities for future innovation.
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Affiliation(s)
- Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Min-Kyu Song
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jung-El Ryu
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
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43
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Lai J, Wang W, Liu S, Chen B, Kang L, Chen Q, Chen L. Identification of the conductivity type of single-walled carbon nanotubes via dual-modulation dielectric force microscopy. J Chem Phys 2024; 161:034201. [PMID: 39007487 DOI: 10.1063/5.0205512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2024] [Accepted: 06/26/2024] [Indexed: 07/16/2024] Open
Abstract
The conductivity type is one of the most fundamental transport properties of semiconductors, which is usually identified by fabricating the field-effect transistor, the Hall-effect device, etc. However, it is challenging to obtain an Ohmic contact if the sample is down to nanometer-scale because of the small size and intrinsic heterogeneity. Noncontact dielectric force microscopy (DFM) can identify the conductivity type of the sample by applying a DC gate voltage to the tip, which is effective in tuning the accumulation or depletion of charge carriers. Here, we further developed a dual-modulation DFM, which simplified the conductivity type identification from multiple scan times under different DC gate voltages to a single scan under an AC gate voltage. Taking single-walled carbon nanotubes as testing samples, the semiconducting-type sample exhibits a more significant charge carrier accumulation/depletion under each half-period of the AC gate voltage than the metallic-type sample due to the stronger rectification effect. The charge carrier accumulation or depletion of the p-type sample is opposite to that of the n-type sample at the same half-period of the AC gate voltage because of the reversed charge carrier type.
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Affiliation(s)
- Junqi Lai
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Wenyuan Wang
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Shuai Liu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Bowen Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Lixing Kang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Liwei Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- In-situ Center for Physical Sciences, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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44
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Yang Q, Wang YP, Shi XL, Li X, Zhao E, Chen ZG, Zou J, Leng K, Cai Y, Zhu L, Pantelides ST, Lin J. Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism. Nat Commun 2024; 15:6074. [PMID: 39025911 PMCID: PMC11258352 DOI: 10.1038/s41467-024-50525-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 07/13/2024] [Indexed: 07/20/2024] Open
Abstract
One-dimensional metallic transition-metal chalcogenide nanowires (TMC-NWs) hold promise for interconnecting devices built on two-dimensional (2D) transition-metal dichalcogenides, but only isotropic growth has so far been demonstrated. Here we show the direct patterning of highly oriented Mo6Te6 NWs in 2D molybdenum ditelluride (MoTe2) using graphite as confined encapsulation layers under external stimuli. The atomic structural transition is studied through in-situ electrical biasing the fabricated heterostructure in a scanning transmission electron microscope. Atomic resolution high-angle annular dark-field STEM images reveal that the conversion of Mo6Te6 NWs from MoTe2 occurs only along specific directions. Combined with first-principles calculations, we attribute the oriented growth to the local Joule-heating induced by electrical bias near the interface of the graphite-MoTe2 heterostructure and the confinement effect generated by graphite. Using the same strategy, we fabricate oriented NWs confined in graphite as lateral contact electrodes in the 2H-MoTe2 FET, achieving a low Schottky barrier of 11.5 meV, and low contact resistance of 43.7 Ω µm at the metal-NW interface. Our work introduces possible approaches to fabricate oriented NWs for interconnections in flexible 2D nanoelectronics through direct metal phase patterning.
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Affiliation(s)
- Qishuo Yang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, People's Republic of China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, People's Republic of China
- School of Mechanical and Mining Engineering, The University of Queensland Brisbane, Qld, Australia
| | - Yun-Peng Wang
- School of Physics and Electronics, Hunan Key Laboratory for Super-Micro Structure and Ultrafast Process, Central South University, Changsha, People's Republic of China
| | - Xiao-Lei Shi
- School of Chemistry and Physics, Queensland University of Technology Brisbane, Qld, Australia
| | - XingXing Li
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Erding Zhao
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Zhi-Gang Chen
- School of Chemistry and Physics, Queensland University of Technology Brisbane, Qld, Australia
| | - Jin Zou
- Center for Microscopy and Microanalysis, The University of Queensland Brisbane, St Lucia, Qld, Australia
| | - Kai Leng
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Yongqing Cai
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, SAR, China
| | - Liang Zhu
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, People's Republic of China.
| | - Sokrates T Pantelides
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA
- Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA
| | - Junhao Lin
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, People's Republic of China.
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, People's Republic of China.
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Cheng Z, Jia X, Han B, Li M, Xu W, Li Y, Gao P, Dai L. P/N-Type Conversion of 2D MoTe 2 Controlled by Top Gate Engineering for Logic Circuits. ACS APPLIED MATERIALS & INTERFACES 2024; 16:36539-36546. [PMID: 38973165 DOI: 10.1021/acsami.4c03090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2024]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration. However, the fabrication of the top gate FET involves depositing an insulating dielectric layer and a gate electrode in sequence on the TMDC channel material, which may affect the device performance. Insightfully investigating the influences of different top-gate-deposition methods on the electrical properties of the TMDC channel and further harnessing these influences to realize a homogeneous CMOS device on an identical 2D TMDC platform are with practice significance. In this work, p/n-type controllable top gate FET arrays based on 2H-MoTe2 are fabricated by using different top-gate-deposition methods. The electron-beam evaporation (EBE) of top metal gate exhibits an obvious n-doping effect on the 2H-MoTe2 channel and converts it from p-type to n-type, whereas the thermal evaporation of top gate affects little to the channel. High-resolution transmission electron microscopy (HR-TEM) analysis reveals that the high-energy metal atoms from the EBE process can penetrate through the 30 nm gate dielectric layers (including 10 nm Al2O3 seeding layer), leading to multiple atomic defects in both MoTe2 and the interface between MoTe2 and Al2O3. Furthermore, by utilizing the top gate engineering, a large-scale double-top-gate MoTe2 homogeneous CMOS inverter array is fabricated. The CMOS inverters exhibit clear logic swing, negligible hysteresis, and high device yield (∼93%), indicating high device reliability and stability. Notably, the fabrication process is facile, free from transfer procedure, and compatible with traditional silicon technology. This work promotes the application of 2D TMDCs in nanoelectronics integration.
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Affiliation(s)
- Zhixuan Cheng
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Xionghui Jia
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Bo Han
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Minglai Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Wanjin Xu
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Yanping Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Gao
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Lun Dai
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Beijing 100871, China
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Li C, Sang D, Ge S, Zou L, Wang Q. Recent Excellent Optoelectronic Applications Based on Two-Dimensional WS 2 Nanomaterials: A Review. Molecules 2024; 29:3341. [PMID: 39064919 PMCID: PMC11280397 DOI: 10.3390/molecules29143341] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2024] [Revised: 07/05/2024] [Accepted: 07/13/2024] [Indexed: 07/28/2024] Open
Abstract
Tungsten disulfide (WS2) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic devices due to its high carrier mobility, high absorption coefficient, large exciton binding energy, polarized light emission, high surface-to-volume ratio, and tunable band gap. These properties contribute to its excellent photoluminescence and high anisotropy. These characteristics render WS2 an advantageous material for applications in light-emitting devices, memristors, and numerous other devices. This article primarily reviews the most recent advancements in the field of optoelectronic devices based on two-dimensional (2D) nano-WS2. A variety of advanced devices have been considered, including light-emitting diodes (LEDs), sensors, field-effect transistors (FETs), photodetectors, field emission devices, and non-volatile memory. This review provides a guide for improving the application of 2D WS2 through improved methods, such as introducing defects and doping processes. Moreover, it is of great significance for the development of transition-metal oxides in optoelectronic applications.
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Affiliation(s)
| | - Dandan Sang
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | | | | | - Qinglin Wang
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
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Li T, Jiang W, Wu Y, Zhou L, Ye H, Geng Y, Hu M, Liu K, Wang R, Sun Y. Controlled Fabrication of Metallic MoO 2 Nanosheets towards High-Performance p-Type 2D Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403118. [PMID: 38990881 DOI: 10.1002/smll.202403118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 06/09/2024] [Indexed: 07/13/2024]
Abstract
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are extensively employed as channel materials in advanced electronic devices. The electrical contacts between electrodes and 2D semiconductors play a crucial role in the development of high-performance transistors. While numerous strategies for electrode interface engineering have been proposed to enhance the performance of n-type 2D transistors, upgrading p-type ones in a similar manner remains a challenge. In this work, significant improvements in a p-type WSe2 transistor are demonstrated by utilizing metallic MoO2 nanosheets as the electrode contact, which are controllably fabricated through physical vapor deposition and subsequent annealing. The MoO2 nanosheets exhibit an exceptional electrical conductivity of 8.4 × 104 S m‒1 and a breakdown current density of 3.3 × 106 A cm‒2. The work function of MoO2 nanosheets is determined to be ≈5.1 eV, making them suitable for contacting p-type 2D semiconductors. Employing MoO2 nanosheets as the electrode contact in WSe2 transistors results in a notable increase in the field-effect mobility to 92.0 cm2 V‒1 s‒1, which is one order of magnitude higher than the counterpart devices with conventional electrodes. This study not only introduces an intriguing 2D metal oxide to improve the electrical contact in p-type 2D transistors, but also offers an effective approach to fabricating all-2D devices.
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Affiliation(s)
- Tianchi Li
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Wengui Jiang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Liang Zhou
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Huanyu Ye
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Yuchen Geng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Minghui Hu
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Rongming Wang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Yinghui Sun
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, The State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
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Kang T, You J, Wang J, Li Y, Hu Y, Tang TW, Lin X, Li Y, Liu L, Gao Z, Liu Y, Luo Z. Epitaxial Growth of Two-Dimensional MoO 2-MoSe 2 Metal-Semiconductor Heterostructures for Schottky Diodes. NANO LETTERS 2024; 24:8369-8377. [PMID: 38885458 DOI: 10.1021/acs.nanolett.4c01865] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
The metal-semiconductor interface fabricated by conventional methods often suffers from contamination, degrading transport performance. Herein, we propose a one-pot chemical vapor deposition (CVD) process to create a two-dimensional (2D) MoO2-MoSe2 heterostructure by growing MoO2 seeds under a hydrogen environment, followed by depositing MoSe2 on the surface and periphery. The ultraclean interface is verified by cross-sectional scanning transmission electron microscopy and photoluminescence. Along with the high work function of semimetallic MoO2 (Ef = -5.6 eV), a high-rectification Schottky diode is fabricated based on this heterostructure. Furthermore, the Schottky diode exhibits an excellent photovoltaic effect with a high open-circuit voltage of 0.26 eV and ultrafast photoresponse, owing to the naturally formed metal-semiconductor contact with suppressed pinning effect. Our method paves the way for the fabrication of an ultraclean 2D metal-semiconductor interface, without defects or contamination, offering promising prospects for future nanoelectronics.
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Affiliation(s)
- Ting Kang
- Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Jiawen You
- Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
- Department of Biomedical Engineering and Shun Hing Institute of Advanced Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, P. R. China
| | - Jun Wang
- Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Yuyin Li
- Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Yunxia Hu
- Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Tsz Wing Tang
- Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Xiaohui Lin
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Yunxin Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Zhaoli Gao
- Department of Biomedical Engineering and Shun Hing Institute of Advanced Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, P. R. China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
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Zhou M, Zhu W, Bao S, Zhou J, Yu Y, Zhang Q, Ren C, Li Z, Deng Y. Localized Surface Doping Induced Ultralow Contact Resistance between Metal and (Bi,Sb) 2Te 3 Thermoelectric Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:35815-35824. [PMID: 38935440 DOI: 10.1021/acsami.4c06713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
Micro thermoelectric devices are expected to further improve the cooling density for the temperature control of electronic devices; nevertheless, the high contact resistivity between metals and semiconductors critically limits their applications, especially in chip cooling with extremely high heat flux. Herein, based on the calculated results, a low specific contact resistivity of ∼10-7 Ω cm2 at the interface is required to guarantee a desirable cooling power density of micro devices. Thus, we developed a generally applicable interfacial modulation strategy via localized surface doping of thermoelectric films, and the feasibility of such a doping approach for both n/p-type (Bi,Sb)2Te3 films was demonstrated, which can effectively increase the surface-majority carrier concentration explained by the charge transfer mechanism. With a proper doping level, ultralow specific contact resistivities at the interfaces are obtained for n-type (6.71 × 10-8 Ω cm2) and p-type (3.70 × 10-7 Ω cm2) (Bi,Sb)2Te3 layers, respectively, which is mainly attributed to the carrier tunneling enhancement with a narrowed interfacial contact barrier width. This work provides an effective scheme to further reduce the internal resistance of micro thermoelectric coolers, which can also be extended as a kind of universal interfacial modification technique for micro semiconductor devices.
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Affiliation(s)
- Man Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Wei Zhu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province (2021E10022), Hangzhou Innovation Institute of Beihang University, Hangzhou 310052, China
| | - Shucheng Bao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Jie Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Yuedong Yu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Qingqing Zhang
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province (2021E10022), Hangzhou Innovation Institute of Beihang University, Hangzhou 310052, China
| | - Chaojie Ren
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhi Li
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Yuan Deng
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province (2021E10022), Hangzhou Innovation Institute of Beihang University, Hangzhou 310052, China
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50
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Liu H, Zhang T, Wu P, Lee HW, Liu Z, Tang TW, Tang SY, Kang T, Park JH, Wang J, Zhang K, Zheng X, Peng YR, Chueh YL, Liu Y, Palacios T, Kong J, Luo Z. Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition. NANO LETTERS 2024; 24:8277-8286. [PMID: 38949123 DOI: 10.1021/acs.nanolett.4c01314] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
The controlled vapor-phase synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) is essential for functional applications. While chemical vapor deposition (CVD) techniques have been successful for transition metal sulfides, extending these methods to selenides and tellurides often faces challenges due to uncertain roles of hydrogen (H2) in their synthesis. Using CVD growth of MoSe2 as an example, this study illustrates the role of a H2-free environment during temperature ramping in suppressing the reduction of MoO3, which promotes effective vaporization and selenization of the Mo precursor to form MoSe2 monolayers with excellent crystal quality. As-synthesized MoSe2 monolayer-based field-effect transistors show excellent carrier mobility of up to 20.9 cm2/(V·s) with an on-off ratio of 7 × 107. This approach can be extended to other TMDs, such as WSe2, MoTe2, and MoSe2/WSe2 in-plane heterostructures. Our work provides a rational and facile approach to reproducibly synthesize high-quality TMD monolayers, facilitating their translation from laboratory to manufacturing.
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Affiliation(s)
- Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Peng Wu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hae Won Lee
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tsz Wing Tang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
| | - Shin-Yi Tang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Ji-Hoon Park
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jun Wang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
| | - Kenan Zhang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xudong Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yu-Ren Peng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Tomás Palacios
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
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