Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Antiferroelectric Heterostructures Memristors with Unique Resistive Switching Mechanisms and Properties

A novel antiferroelectric material, PbSnO3 (PSO), was introduced into a resistive random access memory (RRAM) to reveal its resistive switching (RS) properties. It exhibits outstanding electrical performance with a large memory window (>104), narrow switching voltage distribution (±2 V), and low power consumption. Using high-resolution transmission electron microscopy, we observed the antiferroelectric properties and remanent polarization of the PSO thin films. The in-plane shear strains in the monoclinic PSO layer are attributed to oxygen octahedral tilts, resulting in misfit dislocations and grain boundaries at the PSO/SRO interface. Furthermore, the incoherent grain boundaries between the orthorhombic and monoclinic phases are assumed to be the primary paths of Ag+ filaments. Therefore, the RS behavior is primarily dominated by antiferroelectric polarization and defect mechanisms for the PSO structures. The RS behavior of antiferroelectric heterostructures controlled by switching spontaneous polarization and strain, defects, and surface chemistry reactions can facilitate the development of new antiferroelectric device systems.

Two-dimensional material-based memristive devices for alternative computing

Two-dimensional (2D) materials have emerged as promising building blocks for next generation memristive devices, owing to their unique electronic, mechanical, and thermal properties, resulting in effective switching mechanisms for charge transport. Memristors are key components in a wide range of applications including neuromorphic computing, which is becoming increasingly important in artificial intelligence applications. Crossbar arrays are an important component in the development of hardware-based neural networks composed of 2D materials. In this paper, we summarize the current state of research on 2D material-based memristive devices utilizing different switching mechanisms, along with the application of these devices in neuromorphic crossbar arrays. Additionally, we discuss the challenges and future directions for the field.

Ferroelectricity-Defects Synergistic Artificial Synapses for High Recognition Accuracy Neuromorphic Computing

The ability of ferroelectric memristors to modulate conductance and offer multilevel storage has garnered significant attention in the realm of artificial synapses. On one hand, the resistance change of ferroelectric memristors mainly depends on the polarization reversal. On the other hand, the defects such as oxygen vacancies, which are inevitable presence during high-temperature processes, can undergo diffusion drift with the polarization reversal, thereby change the interface potential barrier. Thus, it is both desirable and necessary to investigate the synergistic effect of ferroelectricity and defects. Here, we prepare BaTiO3 ferroelectric memristor by pulse laser deposition and achieve resistance switching through the synergistic effect of ferroelectricity and oxygen vacancies. The memristor shows excellent switching characteristics with a large switching ratio (104) and good stability (103 s). It effectively emulates the features of artificial synapses and accomplishes decimal logical neural computing. In the neuromorphic system crafted with the memristor, the recognition accuracy of the 28 × 28 pixel image reaches 94.9%. These findings strongly support the research of ferroelectric memristors in neuromorphic devices.

Multifunctional HfAlO thin film: Ferroelectric tunnel junction and resistive random access memory

This study presents findings indicating that the ferroelectric tunnel junction (FTJ) or resistive random-access memory (RRAM) in one cell can be intentionally selected depending on the application. The HfAlO film annealed at 700 °C shows stable FTJ characteristics and can be converted into RRAM by forming a conductive filament inside the same cell, that is, the process of intentionally forming a conductive filament is the result of defect generation and redistribution, and applying compliance current prior to a hard breakdown event of the dielectric film enables subsequent RRAM operation. The converted RRAM demonstrated good memory performance. Through current-voltage fitting, it was confirmed that the two resistance states of the FTJ and RRAM had different transport mechanisms. In the RRAM, the 1/f noise power of the high-resistance state (HRS) was about ten times higher than that of the low-resistance state (LRS). This is because the noise components increase due to the additional current paths in the HRS. The 1/f noise power according to resistance states in the FTJ was exactly the opposite result from the case of the RRAM. This is because the noise component due to the Poole-Frenkel emission is added to the noise component due to the tunneling current in the LRS. In addition, we confirmed the potentiation and depression characteristics of the two devices and further evaluated the accuracy of pattern recognition through a simulation by considering a dataset from the Modified National Institute of Standards and Technology.

Giant Electroresistance in Ferroelectric Tunnel Junctions via High-Throughput Designs: Toward High-Performance Neuromorphic Computing

Ferroelectric tunnel junctions (FTJs) have been regarded as one of the most promising candidates for next-generation devices for data storage and neuromorphic computing owing to their advantages such as fast operation speed, low energy consumption, convenient 3D stack ability, etc. Here, dramatically different from the conventional engineering approaches, we have developed a tunnel barrier decoration strategy to improve the ON/OFF ratio, where the ultrathin SrTiO3 (STO) dielectric layers are periodically mounted onto the BaTiO3 (BTO) ferroelectric tunnel layer using the high-throughput technique. The inserted STO enhances the local tetragonality of the BTO, resulting in a strengthened ferroelectricity in the tunnel layer, which greatly improves the OFF state and reduces the ON state. Combined with the optimized oxygen migration, which can further manipulate the tunneling barrier, a record-high ON/OFF ratio of ∼108 has been achieved. Furthermore, utilizing these FTJ-based artificial synapses, an artificial neural network has been simulated via back-propagation algorithms, and a classification accuracy as high as 92% has been achieved. This study screens out the prominent FTJ by the high-throughput technique, advancing the tunnel layer decoration at the atomic level in the FTJ design and offering a fundamental understanding of the multimechanisms in the tunnel barrier.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

Reproducible Non-Volatile Multi-State Storage and Emulation of Synaptic Plasticity Based on a Copper-Nanoparticle-Embedded HfOx/ZnO Bilayer with Ultralow-Switching Current and Ideal Data Retention

The multilevel properties of a memristor are significant for applications in non-volatile multi-state storage and electronic synapses. However, the reproducibility and stability of the intermediate resistance states are still challenging. A stacked HfOx/ZnO bilayer embedded with copper nanoparticles was thus proposed to investigate its multilevel properties and to emulate synaptic plasticity. The proposed memristor operated at the microampere level, which was ascribed to the barrier at the HfOx/ZnO interface suppressing the operational current. Compared with the stacked HfOx/ZnO bilayer without nanoparticles, the proposed memristor had a larger ON/OFF resistance ratio (~330), smaller operational voltages (absolute value < 3.5 V) and improved cycle-to-cycle reproducibility. The proposed memristor also exhibited four reproducible non-volatile resistance states, which were stable and well retained for at least ~1 year at 85 °C (or ~10 years at 70 °C), while for the HfOx/ZnO bilayer without copper nanoparticles, the minimum retention time of its multiple resistance states was ~9 days at 85 °C (or ~67 days at 70 °C). Additionally, the proposed memristor was capable of implementing short-term and long-term synaptic plasticities.

Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

Surface charge transfer doping (SCTD) using oxygen plasma to form a p-type dopant oxide layer on transition metal dichalcogenide (TMDs) is a promising doping technique for 2D TMDs field-effect transistors (FETs). However, patternability of SCTD is a key challenge to effectively switch FETs. Herein, a simple method to selectively pattern degenerately p-type (p+ )-doped WSe2 FETs via electron beam (e-beam) irradiation is reported. The effect of the selective e-beam irradiation is confirmed by the gate-tunable optical responses of seamless lateral p+ -p diodes. The OFF state of the devices by inducing trapped charges via selective e-beam irradiation onto a desired channel area in p+ -doped WSe2 , which is in sharp contrast to globally p+ -doped WSe2 FETs, is realized. Selective e-beam irradiation of the PMMA-passivated p+ -WSe2 enables accurate control of the threshold voltage (Vth ) of WSe2 devices by varying the pattern size and e-beam dose, while preserving the low contact resistance. By utilizing hBN as the gate dielectric, high-performance WSe2 p-FETs with a saturation current of -280 µA µm-1 and on/off ratio of 109 are achieved. This study's technique demonstrates a facile approach to obtain high-performance TMD p-FETs by e-beam irradiation, enabling efficient switching and patternability toward various junction devices.

Emergent ferroelectricity in subnanometer binary oxide films on silicon

The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. We report on the thickness-dependent antiferroelectric-to-ferroelectric phase transition in zirconium dioxide (ZrO2) thin films on silicon. The emergent ferroelectricity and hysteretic polarization switching in ultrathin ZrO2, conventionally a paraelectric material, notably persists down to a film thickness of 5 angstroms, the fluorite-structure unit-cell size. This approach to exploit three-dimensional centrosymmetric materials deposited down to the two-dimensional thickness limit, particularly within this model fluorite-structure system that possesses unconventional ferroelectric size effects, offers substantial promise for electronics, demonstrated by proof-of-principle atomic-scale nonvolatile ferroelectric memory on silicon. Additionally, it is also indicative of hidden electronic phenomena that are achievable across a wide class of simple binary materials.

Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures

The functional reconfiguration of transistors and memory in homogenous ferroelectric devices offers significant opportunities for implementing the concepts of in-memory computing and logic-memory monolithic integration. Thus far, reconfiguration is realized through programmable doping profiles in the semiconductor channel using multiple-gate operation. This complex device architecture limits further scaling to match the overall chip requirements. Here, reconfigurable memory/transistor functionalities in a ferroelectric-gated van der Waals transistor by controlling the behavior of ferroelectric oxygen vacancies at the interface are demonstrated. Short- and long-term memory functions are demonstrated by modulating the border oxygen vacancy distribution and the associated charge dynamics. The quasi-nonvolatile long-term memory exhibits data retention of over 10⁵ s and endurance of up to 5 × 10⁵ cycles, verifying its applicability as a potential device platform for neuromorphic networks. More importantly, by modulating the ferroelectricity of the interfacial domains with the interactions of oxygen vacancies, a hysteresis-free logic transistor is realized with a subthermionic subthreshold swing down to 46 mV dec^-1 , which resembles a negative-capacitance field-effect transistor. The new concept of achieving functional reconfiguration with prior device performance in a single-gate ferroelectric field-effect transistor is of great advantage in future integrated circuit applications.

Complex Oxides under Simulated Electric Field: Determinants of Defect Polarization in ABO3 Perovskites

Polarization of ionic and electronic defects in response to high electric fields plays an essential role in determining properties of materials in applications such as memristive devices. However, isolating the polarization response of individual defects has been challenging for both models and measurements. Here the authors quantify the nonlinear dielectric response of neutral oxygen vacancies, comprised of strongly localized electrons at an oxygen vacancy site, in perovskite oxides of the form ABO3 . Their approach implements a computationally efficient local Hubbard U correction in density functional theory simulations. These calculations indicate that the electric dipole moment of this defect is correlated positively with the lattice volume, which they varied by elastic strain and by A-site cation species. In addition, the dipole of the neutral oxygen vacancy under electric field increases with increasing reducibility of the B-site cation. The predicted relationship among point defect polarization, mechanical strain, and transition metal chemistry provides insights for the properties of memristive materials and devices under high electric fields.

Stacked Two-Dimensional MXene Composites for an Energy-Efficient Memory and Digital Comparator

Two-dimensional MXene has enormous potential for application in industry and academia owing to its surface hydrophilicity and excellent electrochemical properties. However, the application of MXene in optoelectronic memory and logical computing is still facing challenges. In this study, an optoelectronic resistive random access memory (RRAM) based on silver nanoparticles (Ag NPs)@MXene-TiO₂ nanosheets (AMT) was prepared through a low-cost and facile hydrothermal oxidation process. The fabricated device exhibited a typical bipolar switching behavior and controllable SET voltage. Furthermore, we successfully demonstrated a 4-bit in-memory digital comparator with AMT RRAMs, which can replace five logic gates in a traditional approach. The AMT-based digital comparator may open the door for future integrated functions and applications in optoelectronic data storage and simplify the complex logic operations.

Controlled Sign Reversal of Electroresistance in Oxide Tunnel Junctions by Electrochemical-Ferroelectric Coupling

The persistence of ferroelectricity in ultrathin layers relies critically on screening or compensation of polarization charges which otherwise destabilize the ferroelectric state. At surfaces, charged defects play a crucial role in the screening mechanism triggering novel mixed electrochemical-ferroelectric states. At interfaces, however, the coupling between ferroelectric and electrochemical states has remained unexplored. Here, we make use of the dynamic formation of the oxygen vacancy profile in the nanometer-thick barrier of a ferroelectric tunnel junction to demonstrate the interplay between electrochemical and ferroelectric degrees of freedom at an oxide interface. We fabricate ferroelectric tunnel junctions with a La_{0.7}Sr_{0.3}MnO_{3} bottom electrode and BaTiO_{3} ferroelectric barrier. We use poling strategies to promote the generation and transport of oxygen vacancies at the metallic top electrode. Generated oxygen vacancies control the stability of the ferroelectric polarization and modify its coercive fields. The ferroelectric polarization, in turn, controls the ionization of oxygen vacancies well above the limits of thermodynamic equilibrium, triggering the build up of a Schottky barrier at the interface which can be turned on and off with ferroelectric switching. This interplay between electronic and electrochemical degrees of freedom yields very large values of the electroresistance (more than 10^{6}% at low temperatures) and enables a controlled switching between clockwise and counterclockwise switching modes in the same junction (and consequently, a change of the sign of the electroresistance). The strong coupling found between electrochemical and electronic degrees of freedom sheds light on the growing debate between resistive and ferroelectric switching in ferroelectric tunnel junctions, and moreover, can be the source of novel concepts in memory devices and neuromorphic computing.

Charge-Ferroelectric Transition in Ultrathin Na0.5 Bi4.5 Ti4 O15 Flakes Probed via a Dual-Gated Full van der Waals Transistor

Ferroelectric field-effect transistors (FeFETs) have recently attracted enormous attention owing to their applications in nonvolatile memories and low-power logic electronics. However, the current mainstream thin-film-based ferroelectrics lack good compatibility with the emergent 2D van der Waals (vdW) heterostructures. In this work, the synthesis of thin ferroelectric Na_0.5 Bi_4.5 Ti₄ O₁₅ (NBIT) flakes by a molten-salt method is reported. With a dry-transferred NBIT flake serving as the top-gate dielectric, dual-gate molybdenum disulfide (MoS₂ ) FeFETs are fabricated in a full vdW stacking structure. Barrier-free graphene contacts allow the investigation of intrinsic carrier transport of MoS₂ governed by lattice scattering. Thanks to the high dielectric constant of ≈94 in NBIT, a metal to insulator transition with a high electron concentration of 3.0 × 10¹³ cm^-2 is achieved in MoS₂ under top-gate modulation. The electron field-effect mobility as high as 182 cm² V^-1 s^-1 at 88 K is obtained. The as-fabricated MoS₂ FeFET exhibits clockwise hysteresis transfer curves that originate from charge trapping/release with either top-gate or back-gate modulation. Interestingly, hysteresis behavior can be controlled from clockwise to counterclockwise using dual-gate. A multifunctional device utilizing this unique property of NBIT, which is switchable electrostatically between short-term memory and nonvolatile ferroelectric memory, is envisaged.

Structure-resistive property relationships in thin ferroelectric BaTiO[Formula: see text] films

A combined study of local structural, electric and ferroelectric properties of SrTiO[Formula: see text]/La[Formula: see text]Sr[Formula: see text]MnO[Formula: see text]/BaTiO[Formula: see text] heterostructures was performed by Piezoresponse Force Microscopy, tunneling Atomic Force Microscopy and Scanning Tunneling Microscopy in the temperature range 30-295 K. The direct correlation of film structure (epitaxial, nanocrystalline or polycrystalline) with local electric and ferroelectric properties was observed. For polycrystalline ferroelectric films the predominant polarization state is defined by the peculiarity of screening the built-in field by positively charged point defects. Based on Scanning Tunneling Spectroscopy results, it was found that a sequent voltage application provokes the modification of local resistive properties related to the redistribution of point defects in thin ferroelectric films. A qualitative analysis of acquired Piezoresponse Force Microscopy, tunneling Atomic Force Microscopy and Scanning Tunneling Microscopy images together with Scanning Tunneling Spectroscopy measurements enabled us to conclude that in the presence of structural defects the competing processes of electron injection, trap filling and the drift of positively charged point defects drives the change of resistive properties of thin films under applied electric field. In this paper, we propose a new approach based on Scanning Tunneling Microscopy/Spectroscopy under ultrahigh vacuum conditions to clarify the influence of point defects on local resistive properties of nanometer-thick ferroelectric films.

Nonvolatile Multistates Memories for High-Density Data Storage

In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared.

Towards a Large-Area Freestanding Single-Crystal Ferroelectric BaTiO3 Membrane

The fabrication and transfer of freestanding single-crystal ferroelectric membranes deserve intensive investigations as to their potential applications in flexible wearable devices, such as flexible data storage devices and varied sensors in E-skin configurations. In this report, we have shown a comprehensive study approach to the acquisition of a large-area freestanding single-crystal ferroelectric BaTiO3 by the Sr3Al2O6 scarification layer method. By controlling the thickness of the BaTiO3 and Sr3Al2O6, the exposed area of the Sr3Al2O6 interlayer, and the utilization of an additional electrode La2/3Sr1/3MnO3 layer, the crack density on the freestanding BaTiO3 can be dramatically decreased from 24.53% to almost none; then, a more than 700 × 530 μm2 area high-quality freestanding BaTiO3 membrane can be achieved. Our results offer a clear and repeatable technology routine for the acquisition of a flexible large-area ferroelectric membrane, which should be instructive to other transition metal oxides as well. Our study can confidently boost flexible device fabrication based on single-crystal transition metal oxides.

Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier

Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in next-generation memories, owing to attractive advantages such as high-density of data storage, nondestructive readout, fast write/read access, and low energy consumption. Herein, recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier. Electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectric/electrode interfaces are discussed with the enhancement of memory performance. Emerging physics, such as nanoscale ferroelectricity, resonant tunneling, and interfacial metallization, and the applications of FTJs in nonvolatile data storage, neuromorphic synapse emulation, and electromagnetic multistate memory are summarized. Finally, challenges and perspectives of FTJ devices are underlined.

Building memory devices from biocomposite electronic materials

Natural biomaterials are potential candidates for the next generation of green electronics due to their biocompatibility and biodegradability. On the other hand, the application of biocomposite systems in information storage, photoelectrochemical sensing, and biomedicine has further promoted the progress of environmentally benign bioelectronics. Here, we mainly review recent progress in the development of biocomposites in data storage, focusing on the application of biocomposites in resistive random-access memory (RRAM) and field effect transistors (FET) with their device structure, working mechanism, flexibility, transient characteristics. Specifically, we discuss the application of biocomposite-based non-volatile memories for simulating biological synapse. Finally, the application prospect and development potential of biocomposites are presented.

Energy-Efficient Artificial Synapses Based on Oxide Tunnel Junctions

The development of artificial synapses has enabled the establishment of brain-inspired computing systems, which provides a promising approach for overcoming the inherent limitations of current computer systems. The two-terminal memristors that faithfully mimic the function of biological synapses have intensive prospects in the neural network field. Here, we propose a high-performance artificial synapse based on oxide tunnel junctions with oxygen vacancy migration. Both short-term and long-term plasticities are mimicked in one device. The oxygen vacancy migration through oxide ultrathin films is utilized to manipulate long-term plasticity. Essential synaptic functions, such as paired pulse facilitation, post-tetanic potentiation, as well as spike-timing-dependent plasticity, are successfully implemented in one device by finely modifying the shape of the pre- and postsynaptic spikes. Ultralow femtojoule energy consumption comparable to that of the human brain indicates its potential application in efficient neuromorphic computing. Oxide tunnel junctions proposed in this work provide an alternative approach for realizing energy-efficient brain-like chips.

Pulse-Driven Nonvolatile Perovskite Memory with Photovoltaic Read-Out Characteristics

This paper presents a unique GdFe_0.8Ni_0.2O₃ perovskite thin film for use in pulse-controlled nonvolatile memory devices (combined with a SrTiO₃ (STO) substrate) without the need for an electrical-stressing read-out process. The use of pulse voltage imposes permanent downward/upward polarization states on GFNO, which enables greater energy density and higher energy efficiency than the unpoled state for memory. The two polarization states produce carrier migrations in opposing directions across the GFNO/STO interface, which alter the depletion region of the device, as reflected in photovoltaic short-circuit current density (J_sc) values. Modulating the duration (varying the number of sequential pulses but fixing the pulse width and delay time) and direction of continuous pulse voltage is an effective method for controlling J_sc, thereby allowing the fabrication of nondestructive, light-tunable, nonvolatile memory devices. In experiments, J_sc in the downward polarized state was approximately 6 times greater than that in the upward polarized state. It is promising that more memory states can be enabled by the proposed heterostructure by selecting appropriate pulse trains. Real-time interfacial changes (relative to the nonvolatile characteristics of the device) were obtained by applying synchrotron X-ray techniques simultaneously with pulse characterization. This made it possible to separately probe the electronic and chemical states of the GFNO (a p-type-like semiconductor) and STO (an n-type-like semiconductor) while varying the pulse direction, thereby making it possible to identify the mechanisms underlying the observed phenomena.

Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films

In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy, X-ray photoelectron spectroscopy, and UV-vis studies. It was found that the device with Au/CuPPc/indium tin oxide sandwich structure exhibits good nonvolatile memory performance with a large ON/OFF current ratio of 103 and long retention time of 1.2 × 103 s.

Giant Electroresistance in Ferroionic Tunnel Junctions

Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancies. An extremely large electroresistance with ON/OFF ratios of 5.1×107 at room temperature and 2.1×109 at 10 K is achieved, using an ultrathin BaTiO3-δ layer as the ferroelectric barrier and a semiconducting Nb-doped SrTiO3 substrate as the bottom electrode. The results point toward an appealing way for the design of high-performance resistive switching devices based on ultrathin oxide heterostructures by ionic controlled interface engineering.

Oxygen-Valve Formed in Cobaltite-Based Heterostructures by Ionic Liquid and Ferroelectric Dual-Gating

Manipulation of oxygen vacancies via electric-field-controlled ionic liquid gating has been reported in many model systems within the emergent fields of oxide electronics and iontronics. It is then significant to investigate the oxygen vacancy formation/annihilation and migration across an additional ferroelectric layer with ionic liquid gating. Here, we report that via a combination of ionic liquid and ferroelectric gating, the remote control of oxygen vacancies and magnetic phase transition can be achieved in SrCoO_2.5 films capped with an ultrathin ferroelectric BaTiO₃ layer at room temperature. The ultrathin BaTiO₃ layer acts as an atomic oxygen valve and is semitransparent to oxygen-ion transport due to the competing interaction between vertical electron tunneling and ferroelectric polarization plus surface electrochemical changes in itself, thus resulting in the striking emergence of new mixed-phase SrCoO _x. The lateral coexistence of brownmillerite phase SrCoO_2.5 and perovskite phase SrCoO_3-δ was directly observed by transmission electron microscopy. Besides the fundamental significance of long-range interaction in ionic liquid gating, the ability to control the flow of oxygen ions across the heterointerface by the oxygen valve provides a new approach on the atomic scale for designing multistate memories, sensors, and solid-oxide fuel cells.

Liquid-based memory and artificial synapse

The brain is considered as the most efficient computational system, and broadly consists of neurons and synapses. Synapses are spaces between neurons; neurotransmitters move from pre-synaptic neurons to post-synaptic neurons to transfer signals. Active research has been carried out to mimic the functions of the human nervous system using solid materials. However, mimicking the exact functions of human synaptic behaviors using solid-state materials is limited because the movement of neurotransmitters in liquid (real synapses) and solid (artificial synapses) environments is very different. Here, we demonstrate synaptic properties including long-term memory, paired-pulse facilitation, and excitatory post-synaptic current, resembling the properties of neurons in biological systems in a liquid-based resistive-switching memory (LRSM) device with a two-terminal structure designed to function based on silver nitrate (AgNO3) solution. The LRSM device can be utilized in very versatile forms and be fabricated in any shapes since its main component is liquid.

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces

Complex oxide thin-film heterostructures often exhibit magnetic properties different from those known for bulk constituents. This is due to the altered local structural and electronic environment at the interfaces, which affects the exchange coupling and magnetic ordering. The emergent magnetism at oxide interfaces can be controlled by ferroelectric polarization and has a strong effect on spin-dependent transport properties of oxide heterostructures, including magnetic and ferroelectric tunnel junctions. Here, using prototype La_2/3Sr_1/3MnO₃/BaTiO₃ heterostructures, we demonstrate that ferroelectric polarization of BaTiO₃ controls the orbital hybridization and magnetism at heterointerfaces. We observe changes in the enhanced orbital occupancy and significant charge redistribution across the heterointerfaces, affecting the spin and orbital magnetic moments of the interfacial Mn and Ti atoms. Importantly, we find that the exchange coupling between Mn and Ti atoms across the interface is tuned by ferroelectric polarization from ferromagnetic to antiferromagnetic. Our findings provide a viable route to electrically control complex magnetic configurations at artificial multiferroic interfaces, taking a step toward low-power spintronics.

Interface Engineering and Emergent Phenomena in Oxide Heterostructures

Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low-dimensional systems but also provide potentials for exploring next-generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed.

Probing of Local Multifield Coupling Phenomena of Advanced Materials by Scanning Probe Microscopy Techniques

The characterization of the local multifield coupling phenomenon (MCP) in various functional/structural materials by using scanning probe microscopy (SPM)-based techniques is comprehensively reviewed. Understanding MCP has great scientific and engineering significance in materials science and engineering, as in many practical applications, materials and devices are operated under a combination of multiple physical fields, such as electric, magnetic, optical, chemical and force fields, and working environments, such as different atmospheres, large temperature fluctuations, humidity, or acidic space. The materials' responses to the synergetic effects of the multifield (physical and environmental) determine the functionalities, performance, lifetime of the materials, and even the devices' manufacturing. SPM techniques are effective and powerful tools to characterize the local effects of MCP. Here, an introduction of the local MCP, the descriptions of several important SPM techniques, especially the electrical, mechanical, chemical, and optical related techniques, and the applications of SPM techniques to investigate the local phenomena and mechanisms in oxide materials, energy materials, biomaterials, and supramolecular materials are covered. Finally, an outlook of the MCP and SPM techniques in materials research is discussed.

Multiple strains and polar states in PbZr0.52Ti0.48O3/PbTiO3 superlattices revealed by aberration-corrected HAADF-STEM imaging

Tuning multiple strain and polar states of ferroelectrics by using strain engineering is an essential approach for designing multifunctional electric devices such as multiple state memories. However, integrating multiple strain states is still a challenge, and in addition, revealing such strains and the resultant polar behaviors on the atomic level remains difficult. In this work we prepare PbZr_0.52Ti_0.48O₃/PbTiO₃ (PZT/PTO) superlattices on SrRuO₃-buffered SrTiO₃(001) substrates. Aberration-corrected high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) reveals that the superlattice is coherent in both c (out-of-plane polar direction) and a (in-plane polar direction) domains. We find that the strain states of both PZT and PTO in c and a domains are variant, leading to four special strain states. For example, the tetragonality for PTO in c and a domains is 1.061 and 1.045, respectively. In contrast, PZT in c domains displays a tetragonality as giant as 1.107, which corresponds to 110 µC cm^-2 spontaneous polarization, much larger than the bulk PZT; while PZT in a domains exhibits 1.010 tetragonality with about 70 µC cm^-2 polarization. This study reveals a practical way to integrate multiple strain states and enhanced polarizations in ferroelectric films, which could be used as multifunctional electric elements.

Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

Higher memory density and faster computational performance of resistive switching cells require reliable array-accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni-electrode/HfO x /SiO2 asymmetric self-rectifying resistive switching device is fabricated. The interfacial defects in the HfO x /SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation-dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni-rich conductive filament modifies the resistive switching effect. This study has important implications at the array-level performance of high density resistive switching memories.

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Asymmetric resistive switching processes were observed in BaTiO₃/Nb:SrTiO₃ epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 10⁵ ns under - 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO₃/Nb:SrTiO₃ heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.

Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions

Recently, complementary resistive switches (CRSs) have attracted considerable attention because of the effective suppression of the sneak leakage that is an inherent problem of crossbar memory arrays. In this work, we propose a new CRS device enabling nondestructive readout based on back-to-back in-series Pt/BaTiO₃/Nb:SrTiO₃ ferroelectric tunnel junctions (FTJs). The FTJ elements exhibit not only a nonvolatile resistance switching but also a typical diode-like transport in the high-resistance state (HRS) because of the ferroelectric enhancement on the Schottky barrier of the BaTiO₃/Nb:SrTiO₃ interface. With the rectifying characteristic, the complementary HRS + LRS (low-resistance state) and LRS + HRS states can be well-distinguished and nondestructively read out by a subthreshold voltage. In addition, the sneak current is significantly suppressed in the Pt/BaTiO₃/Nb:SrTiO₃ CRS crossbar array, and the maximum scaling size is increased by about 50 times, in comparison to the array constituted by only the single-FTJ devices. These results facilitate the design of high-performance resistive memories based on the crossbar architecture.