Capacitive Dark Currents, Hysteresis, and Electrode Polarization in Lead Halide Perovskite Solar Cells

Tungsten-Doped ZnO as an Electron Transport Layer for Perovskite Solar Cells: Enhancing Efficiency and Stability

This study delves into enhancing the efficiency and stability of perovskite solar cells (PSCs) by optimizing the surface morphologies and optoelectronic properties of the electron transport layer (ETL) using tungsten (W) doping in zinc oxide (ZnO). Through a unique green synthesis process and spin-coating technique, W-doped ZnO films were prepared, exhibiting improved electrical conductivity and reduced interface defects between the ETL and perovskite layers, thus facilitating efficient electron transfer at the interface. High-quality PSCs with superior ETL demonstrated a substantial 30% increase in power conversion efficiency (PCE) compared to those employing pristine ZnO ETL. These solar cells retained over 70% of their initial PCE after 4000 h of moisture exposure, surpassing reference PSCs by 50% PCE over this period. Advanced numerical multiphysics solvers, employing finite-difference time-domain (FDTD) and finite element method (FEM) techniques, were utilized to elucidate the underlying optoelectrical characteristics of the PSCs, with simulated results corroborating experimental findings. The study concludes with a thorough discussion on charge transport and recombination mechanisms, providing insights into the enhanced performance and stability achieved through W-doped ZnO ETL optimization.

Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory

With the increasing demands and complexity of the neuromorphic computing schemes utilizing highly efficient analog resistive switching devices, understanding the apparent capacitive and inductive effects in device operation is of paramount importance. Here, we present a systematic array of characterization methods that unravel two distinct voltage-dependent regimes demonstrating the complex interplay between the dynamic capacitive and inductive effects in volatile perovskite-based memristors: (1) a low voltage capacitance-dominant and (2) an inductance-dominant regime evidenced by the highly correlated hysteresis type with nonzero crossing, the impedance responses, and the transient current characteristics. These dynamic capacitance- and inductance-dominant regimes provide fundamental insight into the resistive switching of memristors governing the synaptic depression and potentiation functions, respectively. More importantly, the pulse width-dependent and long-term transient current measurements further demonstrate a dynamic transition from a fast capacitive to a slow inductive response, allowing for the tailored stimulus programming of memristor devices to mimic synaptic functionality.

The dual nature of metal halide perovskites

Metal halide perovskites have brought about a disruptive shift in the field of third-generation photovoltaics. Their potential as remarkably efficient solar cell absorbers was first demonstrated in the beginning of the 2010s. However, right from their inception, persistent challenges have impeded the smooth adoption of this technology in the industry. These challenges encompass issues such as the lack of reproducibility in fabrication, limited mid- and long-term stability, and concerns over toxicity. Despite achieving record efficiencies that have outperformed even well-established technologies, such as polycrystalline silicon, these hurdles have hindered the seamless transition of this technology into industrial applications. In this Perspective, we discuss which of these challenges are rooted in the unique dual nature of metal halide perovskites, which simultaneously function as electronic and ionic semiconductors. This duality results in the intermingling of processes occurring at vastly different timescales, still complicating both their comprehensive investigation and the development of robust and dependable devices. Our discussion here undertakes a critical analysis of the field, addressing the current status of knowledge for devices based on halide perovskites in view of electronic and ionic conduction, the underlying models, and the challenges encountered when these devices are optoelectronically characterized. We place a distinct emphasis on the positive contributions that this area of research has not only made to the advancement of photovoltaics but also to the broader progress of solid-state physics and photoelectrochemistry.

Hysteresis and Its Correlation to Ionic Defects in Perovskite Solar Cells

Ion migration has been reported to be one of the main reasons for hysteresis in the current-voltage (J-V) characteristics of perovskite solar cells. We investigate the interplay between ionic conduction and hysteresis types by studying Cs0.05(FA0.83MA0.17)0.95Pb(I0.9Br0.1)3 triple-cation perovskite solar cells through a combination of impedance spectroscopy (IS) and sweep-rate-dependent J-V curves. By comparing polycrystalline devices to single-crystal MAPbI3 devices, we separate two defects, β and γ, both originating from long-range ionic conduction in the bulk. Defect β is associated with a dielectric relaxation, while the migration of γ is influenced by the perovskite/hole transport layer interface. These conduction types are the causes of different types of hysteresis in J-V curves. The accumulation of ionic defects at the transport layer is the dominant cause for observing tunnel-diode-like characteristics in the J-V curves. By comparing devices with interface modifications at the electron and hole transport layers, we discuss the species and polarity of involved defects.

Investigation of the Role of K2SO4 Electrolyte in Hole Transport Layer for Efficient Quasi-2D Perovskite Light-Emitting Diodes

Quasi-two-dimensional (2D) perovskite light-emitting diodes are promising light sources for color display and lighting. However, poor carrier injection and transport between the bottom hole transport layer (HTL) and perovskite limit the device performance. Here we demonstrate a simple and effective way to modify the HTL for enhancing the performance of perovskite light-emitting diodes (PeLEDs). An electrolyte K2SO4 is used to mix with poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as the hole transport layer. The K+ doping helped the quasi-2D perovskite phases grow vertically along the interface of the PEDOT:PSS, fine-modulate the phase distribution, and simultaneously reduce the defect density of quasi-2D perovskites. It also significantly reduced the exciton quenching and injection barrier at PEDOT:PSS and quasi-2D perovskite interface. The optimized green PeLEDs with the K2SO4 doped PEDOT:PSS HTL showed a maximum luminance of 17185 cd/m2 which is almost 4.7 times brighter than the control one, with a maximum external quantum efficiency of 18.64%.

Substitution of lead with tin suppresses ionic transport in halide perovskite optoelectronics

Despite the rapid rise in the performance of a variety of perovskite optoelectronic devices with vertical charge transport, the effects of ion migration remain a common and longstanding Achilles' heel limiting the long-term operational stability of lead halide perovskite devices. However, there is still limited understanding of the impact of tin (Sn) substitution on the ion dynamics of lead (Pb) halide perovskites. Here, we employ scan-rate-dependent current-voltage measurements on Pb and mixed Pb-Sn perovskite solar cells to show that short circuit current losses at lower scan rates, which can be traced to the presence of mobile ions, are present in both kinds of perovskites. To understand the kinetics of ion migration, we carry out scan-rate-dependent hysteresis analyses and temperature-dependent impedance spectroscopy measurements, which demonstrate suppressed ion migration in Pb-Sn devices compared to their Pb-only analogues. By linking these experimental observations to first-principles calculations on mixed Pb-Sn perovskites, we reveal the key role played by Sn vacancies in increasing the iodide ion migration barrier due to local structural distortions. These results highlight the beneficial effect of Sn substitution in mitigating undesirable ion migration in halide perovskites, with potential implications for future device development.

Influence of an Organic Salt-Based Stabilizing Additive on Charge Carrier Dynamics in Triple Cation Perovskite Solar Cells

Besides further improvement in the power conversion efficiency (PCE) of perovskite solar cells (PSC), their long-term stability must also be ensured. Additives such as organic cations with halide counter anions are considered promising candidates to address this challenge, conferring both higher performance and increased stability to perovskite-based devices. Here, a stabilizing additive (N,N-dimethylmethyleneiminium chloride, [Dmmim]Cl) is identified, and its effect on charge carrier mobility and lifetime under thermal stress in triple cation perovskite (Cs0.05 MA0.05 FA0.90 PbI3 ) thin films is investigated. To explore the fundamental mechanisms limiting charge carrier mobility, temperature-dependent microwave conductivity measurements are performed. Different mobility behaviors across two temperature regions are revealed, following the power law Tm , indicating two different dominant scattering mechanisms. The low-temperature region is assigned to charge carrier scattering with polar optical phonons, while a strong decrease in mobility at high temperatures is due to dynamic disorder. The results obtained rationalize the improved stability of the [Dmmim]Cl-doped films and devices compared to the undoped reference samples, by limiting temperature-activated mobile ions and retarding degradation of the perovskite film.

Inhibition of Ion Migration for Highly Efficient and Stable Perovskite Solar Cells

In recent years, organic-inorganic halide perovskites are now emerging as the most attractive alternatives for next-generation photovoltaic devices, due to their excellent optoelectronic characteristics and low manufacturing cost. However, the resultant perovskite solar cells (PVSCs) are intrinsically unstable owing to ion migration, which severely impedes performance enhancement, even with device encapsulation. There is no doubt that the investigation of ion migration and the summarization of recent advances in inhibition strategies are necessary to develop "state-of-the-art" PVSCs with high intrinsic stability for accelerated commercialization. This review systematically elaborates on the generation and fundamental mechanisms of ion migration in PVSCs, the impact of ion migration on hysteresis, phase segregation, and operational stability, and the characterizations for ion migration in PVSCs. Then, many related works on the strategies for inhibiting ion migration toward highly efficient and stable PVSCs are summarized. Finally, the perspectives on the current obstacles and prospective strategies for inhibition of ion migration in PVSCs to boost operational stability and meet all of the requirements for commercialization success are summarized.

Role of Dipolar Organic Cations on Light-triggered Charge Transfer at TiO2 /CH3 NH3 PbI3 Interfaces

The TiO2 /MAPbI3 (MA=CH3 NH3 ) interfaces have manifested correlation with current-voltage hysteresis in perovskite solar cells (PSCs) under light illumination conditions, but the relations between the photo-induced charge transfer and the collective polarization response of the dipolar MA cations are largely unexplored. In this work, we adopt density functional theory (DFT) and time-dependent DFT approach to study the light-triggered charge transfer across the TiO2 /MAPbI3 interfaces with MAI- and PbI-exposed terminations. It is found that regardless of the surface exposure of the MAPbI3 , the photo-induced charge transfer varies when going from the ground-state geometries to the excited-state configurations. Besides, thanks to the electrostatic interactions between the ends of MA cations and the photogenerated electrons, the photo-induced charge transfer across the interfaces is enhanced (weakened) by the negatively (positively) charged CH3 (NH3 ) moieties of the MA species. Resultantly, the positively charged iodine vacancies at the TiO2 /MAPbI3 interfaces tend to inhibit the charge transfer induced by light. Combining with the energy level alignment which is significantly modulated by the orientation of the MA species at the interfaces, the dipolar MA cations might be a double-edge sword for the hysteresis in PSCs with the TiO2 /MAPbI3 interfaces.

Sterically Suppressed Phase Segregation in 3D Hollow Mixed-Halide Wide Band Gap Perovskites

Band gap tuning in mixed-halide perovskites enables efficient multijunction solar cells and LEDs. However, these wide band gap perovskites, which contain a mixture of iodide and bromide ions, are known to phase segregate under illumination, introducing voltage losses that limit stability. Previous studies have employed inorganic perovskites, halide alloys, and grain/interface passivation to minimize halide segregation, yet photostability can be further advanced. By focusing on the role of halide vacancies in anion migration, one expects to be able to erect local barriers to ion migration. To achieve this, we employ a 3D "hollow" perovskite structure, wherein a molecule that is otherwise too large for the perovskite lattice is incorporated. The amount of hollowing agent, ethane-1,2-diammonium dihydroiodide (EDA), varies the density of the hollow sites. Photoluminescence measurements reveal that 1% EDA in the perovskite bulk can stabilize a 40% bromine mixed-halide perovskite at 1 sun illumination intensity. These, along with capacitance-frequency measurements, suggest that hollow sites limit the mobility of the halide vacancies.

Recent Progress in Perovskite Tandem Solar Cells

Tandem solar cells are widely considered the industry's next step in photovoltaics because of their excellent power conversion efficiency. Since halide perovskite absorber material was developed, it has been feasible to develop tandem solar cells that are more efficient. The European Solar Test Installation has verified a 32.5% efficiency for perovskite/silicon tandem solar cells. There has been an increase in the perovskite/Si tandem devices' power conversion efficiency, but it is still not as high as it might be. Their instability and difficulties in large-area realization are significant challenges in commercialization. In the first part of this overview, we set the stage by discussing the background of tandem solar cells and their development over time. Subsequently, a concise summary of recent advancements in perovskite tandem solar cells utilizing various device topologies is presented. In addition, we explore the many possible configurations of tandem module technology: the present work addresses the characteristics and efficacy of 2T monolithic and mechanically stacked four-terminal devices. Next, we explore ways to boost perovskite tandem solar cells' power conversion efficiencies. Recent advancements in the efficiency of tandem cells are described, along with the limitations that are still restricting their efficiency. Stability is also a significant hurdle in commercializing such devices, so we proposed eliminating ion migration as a cornerstone strategy for solving intrinsic instability problems.

Determination of Mobile Ion Densities in Halide Perovskites via Low-Frequency Capacitance and Charge Extraction Techniques

Mobile ions in perovskite photovoltaic devices can hinder performance and cause degradation by impeding charge extraction and screening the internal field. Accurately quantifying mobile ion densities remains a challenge and is a highly debated topic. We assess the suitability of several experimental methodologies for determining mobile ion densities by using drift-diffusion simulations. We found that charge extraction by linearly increasing voltage (CELIV) underestimates ion density, but bias-assisted charge extraction (BACE) can accurately reproduce ionic lower than the electrode charge. A modified Mott-Schottky (MS) analysis at low frequencies can provide ion density values for high excess ionic densities, typical for perovskites. The most significant contribution to capacitance originates from the ionic depletion layer rather than the accumulation layer. Using low-frequency MS analysis, we also demonstrate light-induced generation of mobile ions. These methods enable accurate tracking of ionic densities during device aging and a deeper understanding of ionic losses.

Ionic and electronic polarization effects in horizontal hybrid perovskite device structures close to equilibrium

The electrical response of hybrid perovskite devices carries a significant signature from mobile ionic defects, pointing to both opportunities and threats when it comes to functionality, performance and stability of these devices. Despite its importance, the interpretation of polarization effects due to the mixed ionic-electronic conducting nature of these materials and the quantification of their ionic conductivities still poses conceptual and practical challenges, even for the equilibrium situation. In this study, we address these questions and investigate the electrical response of horizontal devices based on methylammonium lead iodide (MAPI) close to equilibrium conditions. We discuss the interpretation of DC polarization and impedance spectroscopy measurements in the dark, based on calculated and fitted impedance spectra obtained using equivalent circuit models that account for the mixed conductivity of the perovskite and for the effect of device geometry. Our results show that, for horizontal structures with a gap width between the metal electrodes in the order of tens of microns, the polarization behavior of MAPI is well described by the charging of the mixed conductor/metal interface, suggesting a Debye length in the perovskite close to 1 nm. We highlight a signature in the impedance response at intermediate frequencies, which we assign to ionic diffusion in the plane parallel to the MAPI/contact interface. By comparing the experimental impedance results with calculated spectra for different circuit models, we discuss the potential role of multiple mobile ionic species and rule out a significant contribution from iodine exchange with the gas phase in the electrical response of MAPI close to equilibrium. This study helps to clarify the measurement and interpretation of mixed conductivity and polarization effects in hybrid perovskites with immediate relevance to the characterization and development of transistors, memristors and solar cells based on this class of materials as well as other mixed conductors.

MDACl2-Modified SnO2 Film for Efficient Planar Perovskite Solar Cells

The electron transport layer (ETL) with excellent charge extraction and transport ability is one of the key components of high-performance perovskite solar cells (PSCs). SnO2 has been considered as a more promising ETL for the future commercialization of PSCs due to its excellent photoelectric properties and easy processing. Herein, we propose a facile and effective ETL modification strategy based on the incorporation of methylenediammonium dichloride (MDACl2) into the SnO2 precursor colloidal solution. The effects of MDACl2 incorporation on charge transport, defect passivation, perovskite crystallization, and PSC performance are systematically investigated. First, the surface defects of the SnO2 film are effectively passivated, resulting in the increased conductivity of the SnO2 film, which is conducive to electron extraction and transport. Second, the MDACl2 modification contributes to the formation of high-quality perovskite films with improved crystallinity and reduced defect density. Furthermore, a more suitable energy level alignment is achieved at the ETL/perovskite interface, which facilitates the charge transport due to the lower energy barrier. Consequently, the MDACl2-modified PSCs exhibit a champion efficiency of 22.30% compared with 19.62% of the control device, and the device stability is also significantly improved.

Halide perovskite photoelectric artificial synapses: materials, devices, and applications

In recent years, there has been a research boom on halide perovskites (HPs) whose outstanding performance in photovoltaic and optoelectronic fields is obvious to all. In particular, HP materials find application in the development of artificial synapses. HP-based synapses have great potential for artificial neuromorphic systems, which is due to their outstanding optoelectronic properties, femtojoule-level energy consumption, and simple fabrication process. In this review, we present the physical properties of HPs and describe two types of synaptic devices including two-terminal (2T) memristors and three-terminal (3T) transistors. The HP layer in 2T memristors can realize the change in the device conductance through physical mechanisms dominated by ion migration. On the other hand, HPs in 3T transistors can be used as efficient light-absorbing layers and rely on some special device structures to provide reliable current changes. In the final section of the article, we discuss some of the existing applications of HP-based synapses and bottlenecks to be solved.

Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells

The model system of the InGaN/GaN quantum wells (QWs), based on the first principles calculation, was chosen to understand the underlying mechanism of interfacial polarization and its synergic effect with the built-in electric field (B_ef) at the p-n junction in solar cells (SLs). The polarized electric field (P_ef) was generated due to the redistribution of electrons and holes at the interface; moreover, the P_ef of InGaN/GaN heterostructure on the semipolar (01-11) GaN surface was consistent with that of on the N-polar (000-1) surface, which is on the lines of the B_ef and favors the electron-hole separation efficiency in SLs. Furthermore, the growth of high-quality InGaN/GaN QWs on the semipolar (01-11) GaN surface was achieved. Such an atomic-scale investigation provides a fundamental understanding of the polarization charge-induced P_ef and its interaction coupling with B_ef at the p-n junction, which could be generalized to polar material-based SLs.

Electron-Transport Layers Employing Strongly Bound Ligands Enhance Stability in Colloidal Quantum Dot Infrared Photodetectors

Solution-processed photodetectors based on colloidal quantum dots (CQDs) are promising candidates for short-wavelength infrared light sensing applications. Present-day CQD photodetectors employ a CQD active layer sandwiched between carrier-transport layers in which the electron-transport layer (ETL) is composed of metal oxides. Herein, a new class of ETLs is developed using n-type CQDs, finding that these benefit from quantum-size effect tuning of the band energies, as well as from surface ligand engineering. Photodetectors operating at 1450 nm are demonstrated using CQDs with tailored functionalities for each of the transport layers and the active layer. By optimizing the band alignment between the ETL and the active layer, CQD photodetectors that combine a low dark current of ≈1 × 10^-3 mA cm^-2 with a high external quantum efficiency of ≈66% at 1 V are reported, outperforming prior reports of CQD photodetectors operating at >1400 nm that rely on metal oxides as ETLs. It is shown that stable CQD photodetectors rely on well-passivated CQDs: for ETL CQDs, a strongly bound organic ligand trans-4-(trifluoromethyl)cinnamic acid (TFCA) provides improved passivation compared to the weakly bound inorganic ligand tetrabutylammonium iodide (TBAI). TFCA suppresses bias-induced ion migration inside the ETL and improves the operating stability of photodetectors by 50× compared to TBAI.

Solution-Processed Perovskite/Metal-Oxide Hybrid X-Ray Detector and Array with Decoupled Electronic and Ionic Transport Pathways

Lead halide perovskites possess heavy elements and excellent mobility-lifetime (µτ) product, becoming desirable candidates for X-ray detectors. However, current perovskite photoconduction detectors (PCDs) with vertical geometry, where electronic signals and mobile ions share the same conduction path, are facing with extremely challenging ion-migration issue. Herein, a hybrid X-ray detector device structure, in which perovskite is vertically stacked onto an indium oxide (In₂ O₃ ) transistor with lateral transport geometry is designed, perovskite mainly acts as X-ray sensitizer to activate In₂ O₃ conduction channel, the actual electrical signal is conducted and collected in the lateral metal-oxide device. With the decoupled ionic and electronic transportation, hybrid detectors are insensitive to the ionic motion of perovskite, hence demonstrating no hysteresis and almost no shifting of baseline that are often observed in PCDs, hybrid detectors also exhibit reduced dark current, improved response time, and four times higher photocurrent signals. Finally, array integration of hybrid detectors and preliminary X-ray imaging is realized. The work provides an effective device strategy in addition to the mere material alternations to attain high-performance perovskite-based X-ray detectors and arrays.

Surface versus Bulk Currents and Ionic Space-Charge Effects in CsPbBr3 Single Crystals

CsPbBr₃ single crystals have potential for application in ionizing-radiation detection devices due to their optimal optoelectronic properties. Yet, their mixed ionic-electronic conductivity produces instability and hysteretic artifacts hindering the long-term device operation. Herein, we report an electrical characterization of CsPbBr₃ single crystals operating up to the time scale of hours. Our fast time-of-flight measurements reveal bulk mobilities of 13-26 cm² V^-1 s^-1 with a negative voltage bias dependency. By means of a guard ring (GR) configuration, we separate bulk and surface mobilities showing significant qualitative and quantitative transport differences. Our experiments of current transients and impedance spectroscopy indicate the formation of several regimes of space-charge-limited current (SCLC) associated with mechanisms similar to the Poole-Frenkel ionized-trap-assisted transport. We show that the ionic-SCLC seems to be an operational mode in this lead halide perovskite, despite the fact that experiments can be designed where the contribution of mobile ions to transport is negligible.

Differentiated Functions of Potassium Interface Passivation and Doping on Charge-Carrier Dynamics in Perovskite Solar Cells

The inclusion of potassium in perovskite solar cells (PSCs) has been widely demonstrated to enhance the power conversion efficiency and eliminate the hysteresis effect. However, the effects of the locations K⁺ cations on the charge-carrier dynamics remain unknown with respect to achieving a more delicate passivation design for perovskite interfaces and bulk films. Herein, we employ the combined electrical and ultrafast dynamics analysis for the perovskite film to distinguish the effects of bulk doping and interfacial passivation of the potassium cation. Transient absorption spectroscopy indicates an enhancement of charge-carrier diffusion for K⁺-doped PSCs (from 808 to 605 ps), and charge-carrier transfer is significantly promoted by K⁺ interface passivation (from 12.34 to 1.23 ps) compared with that of the pristine sample. Importantly, K⁺ doping can suppress the formation of wide bandgap perovskite phases (e.g., FAPbI_0.6Br_2.4 and FAPbI_1.05Br_1.95) that generate an energy barrier on the charge-carrier transport channel.

Chemical Inductor

A multitude of chemical, biological, and material systems present an inductive behavior that is not electromagnetic in origin. Here, it is termed a chemical inductor. We show that the structure of the chemical inductor consists of a two-dimensional system that couples a fast conduction mode and a slowing down element. Therefore, it is generally defined in dynamical terms rather than by a specific physicochemical mechanism. The chemical inductor produces many familiar features in electrochemical reactions, including catalytic, electrodeposition, and corrosion reactions in batteries and fuel cells, and in solid-state semiconductor devices such as solar cells, organic light-emitting diodes, and memristors. It generates the widespread phenomenon of negative capacitance, it causes negative spikes in voltage transient measurements, and it creates inverted hysteresis effects in current-voltage curves and cyclic voltammetry. Furthermore, it determines stability, bifurcations, and chaotic properties associated to self-sustained oscillations in biological neurons and electrochemical systems. As these properties emerge in different types of measurement techniques such as impedance spectroscopy and time-transient decays, the chemical inductor becomes a useful framework for the interpretation of the electrical, optoelectronic, and electrochemical responses in a wide variety of systems. In the paper, we describe the general dynamical structure of the chemical inductor and we comment on a broad range of examples from different research areas.

Ionic migration induced loss analysis of perovskite solar cells: a poling study

Understanding the interplay between ionic migration and defect trapping in photovoltaic perovskites is critical to develop targeted passivation techniques for performance enhancement. In this study, systematic poling experiments on Cs0.05(FA0.85MA0.15)0.95Pb(I0.85Br0.15)3 perovskite solar cells (PSCs) were conducted to resolve the principal effects of bias dependent pretreatment effects due to dynamic ionic migration. We find that under negative polarizations, iodine ion accumulation at perovskite/electron transport layer (ETL) interfaces causes enhanced global non-radiative recombination in PSCs and significant open-circuit voltage (Voc) losses. On the other hand, dramatic short-circuit current (Jsc) reduction occurs in positively polarized devices, which is ascribed to ineffective charge collection due to modified band-bending towards both charge transport materials. Spatiotemporally scanning probe microscopy on the surface of polarized perovskites provides an in situ estimation of iodine diffusion mobility and visualization of reorganizations under an external bias. Moreover, our findings suggest that the precondition effect of PSCs under operation due to defect ions is recoverable, therefore achieving a respectable lifetime of PSCs for commercialization is promising.

Evaluating the Capacitive Response in Metal Halide Perovskite Solar Cells

The perovskites solar cells (PSCs) is composed of multifaceted device architecture and involve complex charge extraction (both electronic and ionic), this makes the task demanding to unlock the origin of the different physical process that occurs in a PSC. The capacitance in PSCs depends on several external perturbations including frequency, illumination, temperature, applied bias, and importantly on the interface modification of perovskites/charge selective contact. Arguably, different features including interfacial and bulk; ionic, and electronic charge transport in PSCs occur at different time scales. Capacitance spectroscopy is a prevailing technique to unravel the various physical phenomenon that occurs in a PSC at different time scales. A deeper knowledge of the capacitive response of a PSCs is essential to understand the charge carrier kinetics and unlock the device physics. This work highlights the capacitive response of PSCs and its application to unlock the device physics which is essential for the further optimization and improvement of the device performance.

All-Inorganic Perovskite Solar Cells with Tetrabutylammonium Acetate as the Buffer Layer between the SnO2 Electron Transport Film and CsPbI3

All-inorganic CsPbI₃ perovskites have great potential in tandem cells in combination with other photovoltaic devices. However, CsPbI₃ perovskite solar cells (PSCs) still face a huge challenge, resulting in a low power conversion efficiency (PCE) relative to organic-inorganic PSCs. In this work, we introduced tetrabutylammonium acetate (TBAAc) as a buffer layer between the SnO₂ electron-transport layer (ETL) and CsPbI₃ all-inorganic perovskite film interface for the first time. TBAAc not only improved the conductivity of SnO₂ ETL but also formed a 1D TBAPbI₃ layer between the SnO₂ ETL and the 3D CsPbI₃ all-inorganic perovskite film, thereby enhancing the stability and passivating the surface defects of the CsPbI₃ perovskite to fabricate high-efficiency carbon-counter electrode (CE)-based CsPbI₃ solar cells. We fabricated carbon-CE-based hole-transporting layer ( HTL)-free PSCs with an FTO/SnO₂/TBAAc/CsPbI₃/C structure. The open-circuit voltage (V_oc), short circuit current density (J_sc), PCE, and fill factor of the champion CsPbI₃ PSCs simultaneously enhanced to 1.08 V, 17.48 mA/cm², 12.79, and 67.8%, respectively. This PCE is currently one of the high efficiencies reported for the above planar-structured carbon-CE-based CsPbI₃ PSCs to date. Moreover, the optimized device exhibits excellent stability, which retained over 83% of its initial PCE after 350 h. This work provides a facile way of simultaneous optimization of the SnO₂ ETL and the CsPbI₃ perovskite layer to fabricate stable and high-efficiency carbon-CE-based CsPbI₃ PSCs.

Effects of the PbBr2:PbI2 Molar Ratio on the Formation of Lead Halide Thin Films, and the Ratio's Application for High Performance and Wide Bandgap Solar Cells

We investigate the effects of the molar ratio (x) of PbBr₂ on the phases, microstructure, surface morphology, optical properties, and structural defects of mixed lead halides PbI_2(1−x)Br_2x for use in solar cell devices. Results indicate that as x increased to 0.3, the surface morphology continued to improve, accompanied by the growth of PbI₂ grains. This resulted in lead halide films with a very smooth and continuous morphology, including large grains when the film was formed at x = 0.3. In addition, the microstructure changed from (001)-oriented pure PbI₂ to a highly (001)-oriented β (PbI₂-rich) phase. The plausible mechanism for the enhanced morphology of the lead halide films by the addition of PbBr₂ is proposed based on the growth of a Br-saturated lead iodide solid solution. Furthermore, iodine vacancies, identified by X-ray photoelectron spectroscopy, decreased as the ratio of PbBr₂ increased. Finally, an electrical analysis of the solar cells was performed by using a PN heterojunction model, revealing that structural defects, such as iodine vacancies and grain boundaries, are the main contributors to the degradation of the performance of pure PbI₂-based solar cells (including high leakage, low stability, and high hysteresis), which was significantly improved by the addition of PbBr₂. The solar cell fabricated at x = 0.3 in air showed excellent stability and performance. The device lost merely 20% of the initial efficiency of 4.11% after 1500 h without encapsulation. This may be due to the dense microstructure and the reduced structural defects of lead halides formed at x = 0.3.

Engineering of Annealing and Surface Passivation toward Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes

Solution-processed quasi-two-dimensional (quasi-2D) perovskites with self-assembled multiple quantum well (QW) structures exhibit enhanced exciton binding energy, which is ideal for use as light emitters. Here, we have found that postannealing is important to promoting the QWs' composition transfer, and we explored the correlation among the annealing time, the external quantum efficiency (EQE), and the operational stability of the device. During thermal annealing, the low-n QWs will gradually convert to high-n phases, accompanied by an increase in grain size. The EQE and working stability of the device exhibit different annealing-time dependences; that is, with the extension of the annealing time, the EQE gradually decreases while the working stability improves. By introducing trimethylolpropane trimethacrylate (TPTA) to passivate the emitting-region defects, the annealing-time dependence of the EQE was effectively eliminated due to the reduction of the nonradiative recombination rate, wherefore high efficiency and stability can be achieved simultaneously. Our research provides an effective way to develop highly efficiency and stable perovskite light-emitting diodes.

Impedance Spectroscopy of Metal Halide Perovskite Solar Cells from the Perspective of Equivalent Circuits

Impedance spectroscopy (IS) provides a detailed understanding of the dynamic phenomena underlying the operation of photovoltaic and optoelectronic devices. Here we provide a broad summary of the application of IS to metal halide perovskite materials, solar cells, electrooptic and memory devices. IS has been widely used to characterize perovskite solar cells, but the variability of samples and the presence of coupled ionic-electronic effects form a complex problem that has not been fully solved yet. We summarize the understanding that has been obtained so far, the basic methods and models, as well as the challenging points still present in this research field. Our approach emphasizes the importance of the equivalent circuit for monitoring the parameters that describe the response and providing a physical interpretation. We discuss the possibilities of models from the general perspective of solar cell behavior, and we describe the specific aspects and properties of the metal halide perovskites. We analyze the impact of the ionic effects and the memory effects, and we describe the combination of light-modulated techniques such as intensity modulated photocurrent spectroscopy (IMPS) for obtaining more detailed information in complex cases. The transformation of the frequency to time domain is discussed for the consistent interpretation of time transient techniques and the prediction of features of current-voltage hysteresis. We discuss in detail the stability issues and the occurrence of transformations of the sample coupled to the measurements.

Deciphering the capacitance frequency technique for performance-limiting defect-state parameters in energy-harvesting perovskites

With emerging thin-film PIN-based optoelectronics devices, a significant research thrust is focused on the passivation of trap states for performance enhancement. Among various methods, the capacitance frequency technique (CFT) is widely employed to quantify the trap-state parameters; however, the trapped charge-induced electrostatic effect on the same is not yet established for such devices. Herein, we present a theoretical methodology to incorporate such effects in the CF characteristics of well-established, but not limited to, carrier-selective perovskite-based PIN devices. We show that the electrostatic effect of trapped charges leads to non-linear energy bands in the perovskite layer, which results in the underestimation of the trap density from existing CFT models. Consequently, a parabolic band approximation with effective length (PBAEL) model is developed to accurately predict the trap density for shallow or deep states from CFT analysis. In addition, we demonstrate that the attempt-to-escape frequency, which dictates the trapping dynamics, can be well extracted by eliminating the electrostatic effect at a reduced perovskite thickness. We believe that our work provides a unified theoretical platform for CFT to extract trap-state parameters for a broad class of organic, inorganic, and hybrid semiconductor-based thin-film devices for energy-conversion applications such as solar cells, LEDs, artificial photosynthesis, etc.

Sequential Growth of 2D/3D Double-Layer Perovskite Films with Superior X-Ray Detection Performance

Perovskite materials in different dimensions show great potential in direct X-ray detection, but each with limitations stemming from its own intrinsic properties. Particularly, the sensitivity of two-dimensional (2D) perovskites is limited by poor carrier transport while ion migration in three-dimensional (3D) perovskites causes the baseline drifting problem. To circumvent these limitations, herein a double-layer perovskite film is developed with properly aligned energy level, where 2D (PEA)2 MA3 Pb4 I13 (PEA=2-phenylethylammonium, MA=methylammonium) is cascaded with vertically crystallized 3D MAPbI3 . In this new design paradigm, the 3D layer ensures fast carrier transport while the 2D layer mitigates ion migration, thus offering a high sensitivity and a greatly stabilized baseline. Besides, the 2D layer increases the film resistivity and enlarges the energy barrier for hole injection without compromising carrier extraction. Consequently, the double-layer perovskite detector delivers a high sensitivity (1.95 × 104 μC Gyair -1 cm-2 ) and a low detection limit (480 nGyair s-1 ). Also demonstrated is the X-ray imaging capacity using a circuit board as the object. This work opens up a new avenue for enhancing X-ray detection performance via cascade assembly of various perovskites with complementary properties.

Halide Perovskites for Memristive Data Storage and Artificial Synapses

Halide perovskites have been noted for their exotic properties such as fast ion migration, tunable composition, facile synthetic routes, and flexibility in addition to large light absorption coefficients, long carrier diffusion lengths, and high defect tolerance. These properties have made halide perovskites promising materials for memristors. Applications in the field of resistive switching memory devices and artificial synapses for neuromorphic computing are especially noteworthy. This Perspective covers state-of-the-art perovskite-based memristive devices. Moreover, the fundamental mechanisms and characteristics of perovskite-based memristors are elucidated. Interesting opportunities to improve the performance of perovskite-based memristors for commercialization are provided, including improving film uniformity and air stability, controlling the stoichiometry, finding new all-inorganic and lead-free halide perovskites, and making perovskites into single crystals or quantum dots. We expect our Perspective to be the foundation of realizing next-generation halide perovskite-based memristors.

Exploring the Effect of Ammonium Iodide Salts Employed in Multication Perovskite Solar Cells with a Carbon Electrode

Perovskite solar cells that use carbon (C) as a replacement of the typical metal electrodes, which are most commonly employed, have received growing interest over the past years, owing to their low cost, ease of fabrication and high stability under ambient conditions. Even though Power Conversion Efficiencies (PCEs) have increased over the years, there is still room for improvement, in order to compete with metal-based devices, which exceed 25% efficiency. With the scope of increasing the PCE of Carbon based Perovskite Solar Cells (C-PSCs), in this work we have employed a series of ammonium iodides (ammonium iodide, ethylammonium iodide, tetrabutyl ammonium iodide, phenethylammonium iodide and 5-ammonium valeric acid iodide) as additives in the multiple cation-mixed halide perovskite precursor solution. This has led to a significant increase in the PCE of the corresponding devices, by having a positive impact on the photocurrent values obtained, which exhibited an increase exceeding 20%, from 19.8 mA/cm², for the reference perovskite, to 24 mA/cm², for the additive-based perovskite. At the same time, the ammonium iodide salts were used in a post-treatment method. By passivating the defects, which provide charge recombination centers, an improved performance of the C-PSCs has been achieved, with enhanced FF values reaching 59%, which is a promising result for C-PSCs, and V_oc values up to 850 mV. By combining the results of these parallel investigations, C-PSCs of the triple mesoscopic structure with a PCE exceeding 10% have been achieved, while the in-depth investigation of the effects of ammonium iodides in this PSC structure provide a fruitful insight towards the optimum exploitation of interface and bulk engineering, for high efficiency and stable C-PSCs, with a structure that is favorable for large area applications.

Ferroelastic Domains Enhanced the Photoelectric Response in a CsPbBr3 Single-Crystal Film Detector

The ferroic domain, in metal halide perovskites (MHPs) at a low symmetry phase, was reported to affect optoelectronic properties. Building the relationship between ferroic domains and optoelectronic properties of MHPs will be a non-trivial task for understanding the charge transport mechanism. Here, high-quality CsPbBr₃ single-crystal films (SCFs) were successfully grown by a cast-capping method. Through the phase transition process by heating and cooling the sample, dense domains in CsPbBr₃ SCFs were formed and observed by an in situ polarized optical microscope. These domains were identified as 90° rotation twins by electron backscattered diffraction and transmission electron microscopy. Interestingly, the photocurrent response was dramatically enhanced after introducing ferroelastic domains. The highest responsivity, external quantum efficiency, and detectivity are 380 mA/W, 130%, and 12.9 × 10¹⁰ Jones, respectively, which are surprisingly 25.03, 25, and 7.8 times higher than those of the as-grown CsPbBr₃ SCF, respectively, which may be attributed to the function of the domain wall of separating electrons and holes.

Illumination Intensity Dependence of the Recombination Mechanism in Mixed Perovskite Solar Cells

Recombination mechanisms in solar cells are frequently assessed through the determination of ideality factors. In this work we report an abrupt change of the value of the "apparent" ideality factor (nAP ) in high-efficiency FA0.71 MA0.29 PbI2.9 Br0.1 based mesoscopic perovskite solar cells as a function of light intensity. This change is manifested as a transition from a regime characterized by nAP ∼1.8-2.5 at low light intensities (<10 mWcm-2 ) to one characterized by nAP ∼1. This transition is equally observed in the recombination resistance extracted from open-circuit impedance measurements. We use drift-diffusion simulations with explicit consideration of ion migration to determine the origin of this transition. We find that a change ofrecombination mechanism concurrent with a modification of the concentration of ionic vacancies is the most likely explanation of the observed behaviour. In the drift-diffusion simulations we show that the apparent ideality factor is in fact affected by the ion vacancy concentration so it is not the optimal parameter to assess the dominant recombination mechanism. We argue that a procedure based on a recently derived "electronic" ideality factor obtained from the high frequency feature of the impedance spectrum is better suited to determine the recombination route that dictates the photovoltage.

Fundamentals of Hysteresis in Perovskite Solar Cells: From Structure-Property Relationship to Neoteric Breakthroughs

Perovskite solar cells (PSC) have shown a rapid increase in efficiency than other photovoltaic technology. Despite its success in terms of efficiency, this technology is inundated with numerous challenges hindering the progress towards commercial viability. The crucial one is the anomalous hysteresis observed in the photocurrent density-voltage (J-V) response in PSC. The hysteresis phenomenon in the solar cell presents a challenge for determining the accurate power conversion efficiency of the device. A detailed investigation of the fundamental origin of hysteresis behavior in the device and its associated mechanisms is highly crucial. Though numerous theories have been proposed to explain the causes of hysteresis, its origin includes slow transient capacitive current, trapping, and de-trapping process, ion migrations, and ferroelectric polarization. The remaining issues and future research required toward the understanding of hysteresis in PSC device is also discussed.

Tetragonal-Cubic Phase Transition and Low-Field Dielectric Properties of CH3NH3PbI3 Crystals

The frequency and temperature dependence of dielectric properties of CH₃NH₃PbI₃ (MAPI) crystals have been studied and analyzed in connection with temperature-dependent structural studies. The obtained results bring arguments for the existence of ferroelectricity and aim to complete the current knowledge on the thermally activated conduction mechanisms, in dark equilibrium and in the presence of a small external a.c. electric field. The study correlates the frequency-dispersive dielectric spectra with the conduction mechanisms and their relaxation processes, as well as with the different transport regimes indicated by the Nyquist plots. The different energy barriers revealed by the impedance spectroscopy highlight the dominant transport mechanisms in different frequency and temperature ranges, being associated with the bulk of the grains, their boundaries, and/or the electrodes' interfaces.

Theory of Hysteresis in Halide Perovskites by Integration of the Equivalent Circuit

Perovskite solar cells show a number of internal electronic-ionic effects that produce hysteresis in the current-voltage curves and a dependence of the temporal response on the conditions of the previous stimulus applied to the sample. There are many models and explanations in the literature, but predictive methods that may lead to an assessment of the solar cell behavior based on independent measurements are needed. Here, we develop a method to predict time domain response starting from the frequency domain response measured by impedance spectroscopy over a collection of steady states. The rationale of the method is to convert the impedance response into a set of differential equations, in which the internal state variables emerge naturally and need not be predefined in terms of a physical (drift/diffusion/interfaces) model. Then, one solves (integrates) the evolution for a required external perturbation such as voltage sweep at a constant rate (cyclic voltammetry). Using this method, we solve two elementary but relevant equivalent circuit models for perovskite solar cells and memristors, and we show the emergence of hysteresis in terms of the relevant time and energy constants that can be fully obtained from impedance spectroscopy. We demonstrate quantitatively a central insight in agreement with many observations: regular hysteresis is capacitive, and inverted hysteresis is inductive. Analysis of several types of perovskite solar cells shows excellent correlation of the type of equivalent circuit and the observed hysteresis. A new phenomenon of transformation from capacitive to inductive hysteresis in the course of the current-voltage curve is reported.

Variational hysteresis and photoresponse behavior of MAPbX3(X= I, Br, Cl) perovskite single crystals

High-quality MAPbX₃(X= I, Br, Cl) single crystals with a desirable size were grown through an inverse temperature crystallization method. Systematically measurements of current-voltage (I-V) hysteresis show that the hysteresis is strongly dependent on the measuring protocol, including scan rate and light illumination condition, which reveals the competition of three main factors that influence the charge dynamics in different regimes, defect trap, MA⁺dipoles rotation, and ion migration. In the dark, defect trapping is the dominant charge transport dynamics at low bias in the MAPbI₃, while the MA⁺dipole rotation is significant in MAPbBr₃, and ion migration occurs in MAPbCl₃. However, as bias increases, MA⁺dipole rotation plays a crucial role in the conductivity either in the dark or under light illumination. The time-dependent photoresponse exhibits different tendencies under various biases. The slow rising dynamics of photoresponse in MAPbX₃is attributed to the slow rotation of MA⁺dipoles, while an immediate overshoot followed by a decay suggests significant ion migration contribution at high external bias. The results serve as comprehensive experimental support to understand the hysteresis behaviors and slow photoresponse in MAPbX₃, particularly in MAPbCl₃, and provide a guide for future work in MAPbX₃based optoelectronic devices.

Ionic Liquid-Assisted MAPbI3 Nanoparticle-Seeded Growth for Efficient and Stable Perovskite Solar Cells

With the rapid improvement of perovskite solar cells (PSCs), long-life operational stability has become a major requirement for their commercialization. In this work, we devised a pristine cesium-formamidinium-methylammonium (termed as CsFAMA) triple-cation-based perovskite precursor solution into the ionic liquid (IL)-assisted MAPbI₃ nanoparticles (NPs) through a seeded growth approach in which the host IL-assisted MAPbI₃ NPs remarkably promote high-quality perovskite films with large single-crystal domains, enhancing the device performance and stability. The power conversion efficiency (PCE) of the MAPbI₃ NP-seeded growth of MAPbI₃ NPs/CsFAMA-based PSCs is as high as 19.44%, which is superior to those of MAPbI₃ NPs and pristine CsFAMA films as the photoactive layer (9.52 and 17.33%, respectively). The long-term light-soaking and moisture stability of IL-aided MAPbI₃ NPs/CsFAMA-based devices (non-encapsulated) remain above 90 and 80%, respectively, of their initial output after 2 h of light illumination (1 sun) and 6000 h storage at ambient with a relative humidity range of 30-40%. The use of the IL-assisted MAPbI₃ NP-seeded growth for PSCs is a significant step toward developing stable and reliable perovskite photovoltaic devices.

ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics

Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over the ZnS interlayer thickness on the ångström scale (0-1.5 nm) and to deposit highly pure Sb2S3. Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration.

Spectroscopic Insight into Efficient and Stable Hole Transfer at the Perovskite/Spiro-OMeTAD Interface with Alternative Additives

A stable and efficient carrier transfer is a prerequisite for high-performance perovskite solar cells. With optimized additives, a significantly improved charge carrier transfer can be achieved at the interface of perovskite/2,2',7,7'-tetrakis-(N,N-di-4-methoxyphenylamino)-9,90-spirobifluorene (Spiro-OMeTAD) with significantly boosted photostability. Using time-dependent spectroscopic techniques, we investigated charge carrier and mobile-ion dynamics at the perovskite/Spiro-OMeTAD interface, where the Spiro-OMeTAD contains different bis(trifluoromethanesulfonyl)imide (TFSI) salts additives (Li-TFSI, Mg-TFSI₂, Ca-TFSI₂). The pristine response and the dynamic changes under continuous illuminations are presented, which is correlated to the different behaviors of mobile-ion accumulations at the perovskite/Spiro interface and ascribed to the improved hole mobilities in Spiro-OMeTAD, ultimately contributing to the favorable behaviors in solar cells. It is demonstrated that the hole mobility and conductivity of hole transport layers play an important role in suppressing mobile-ion accumulation at the interfaces of solar cells. With the engineering of mixed-cation mixed-halide perovskite, optimal engineering of additives in hole transport materials is an efficient strategy. Therefore, it should be emphasized for accelerating perovskite photovoltaic commercialization.

Mixed halide perovskites for spectrally stable and high-efficiency blue light-emitting diodes

Bright and efficient blue emission is key to further development of metal halide perovskite light-emitting diodes. Although modifying bromide/chloride composition is straightforward to achieve blue emission, practical implementation of this strategy has been challenging due to poor colour stability and severe photoluminescence quenching. Both detrimental effects become increasingly prominent in perovskites with the high chloride content needed to produce blue emission. Here, we solve these critical challenges in mixed halide perovskites and demonstrate spectrally stable blue perovskite light-emitting diodes over a wide range of emission wavelengths from 490 to 451 nanometres. The emission colour is directly tuned by modifying the halide composition. Particularly, our blue and deep-blue light-emitting diodes based on three-dimensional perovskites show high EQE values of 11.0% and 5.5% with emission peaks at 477 and 467 nm, respectively. These achievements are enabled by a vapour-assisted crystallization technique, which largely mitigates local compositional heterogeneity and ion migration.

Achieving bright and efficient blue emission in metal halide perovskite light-emitting diodes has proven to be challenging. Here, the authors demonstrate high EQE and spectrally stable blue light-emitting diodes based on mixed halide perovskites, with emission from 490 to 451 nm by using a vapour-assisted crystallization technique.

Thermosetting Polyurethane Resins as Low-Cost, Easily Scalable, and Effective Oxygen and Moisture Barriers for Perovskite Solar Cells

Long-term stability of perovskite solar cells (PSCs) is one of the main issues to be solved for forthcoming commercialization of this technology. In this work, thermosetting polyurethane (PU)-based resins are proposed as effective encapsulants for perovskite solar cells to prevent degradation caused by both moisture and oxygen. Application consists of drop-casting the precursor mixture directly over the devices followed by in situ polymerization, avoiding the use of other adhesives. PUs are cost-effective, lightweight, thermal, and light-stable materials whose mechanical, chemical, and physical properties can be easily tuned by thoughtful choice of their precursor. Encapsulated PSCs show extremely good stability when stored under ambient light (maximum, 1000 lux), controlled humidity (28-65%), and temperature (18-30 °C) by retaining 94% of the initial power conversion efficiency after 2500 h (4 months), whereas control devices lose 90% of their performance after 500 h (T₈₀ = 37 h); once stored according to ISOS-D-1, PU-protected devices showed T₈₀ > 1200 h. Encapsulated devices are stable even when immersed in pure water. The demonstration of PUs as promising solution-processed encapsulant materials for PSCs can pave the way for these to become a cost-effective encapsulation route alternative for future industrialization of this technology.

Probing the ionic defect landscape in halide perovskite solar cells

Point defects in metal halide perovskites play a critical role in determining their properties and optoelectronic performance; however, many open questions remain unanswered. In this work, we apply impedance spectroscopy and deep-level transient spectroscopy to characterize the ionic defect landscape in methylammonium lead triiodide (MAPbI₃) perovskites in which defects were purposely introduced by fractionally changing the precursor stoichiometry. Our results highlight the profound influence of defects on the electronic landscape, exemplified by their impact on the device built-in potential, and consequently, the open-circuit voltage. Even low ion densities can have an impact on the electronic landscape when both cations and anions are considered as mobile. Moreover, we find that all measured ionic defects fulfil the Meyer–Neldel rule with a characteristic energy connected to the underlying ion hopping process. These findings support a general categorization of defects in halide perovskite compounds.

Defects in perovskite affect the properties and performance in optoelectronic devices, yet the nature of ionic defects remains elusive. Here, the authors investigate the ionic defect landscape in perovskite introduced by varying precursor stoichiometry, and find the defects fulfill the Meyer-Neldel rule.

Investigation of hysteresis in hole transport layer free metal halide perovskites cells under dark conditions

Recent research is a testimony to the fact that perovskite material based solar cells are most efficient since they exhibit high power conversion efficiency and low cost of fabrication. Various perovskite materials display hysteresis in their current-voltage characteristic which accounts for memory behaviour. In this paper, we demonstrate efficient non-volatile memory devices based on hybrid organic-inorganic perovskite (CH₃NH₃PbI₃) as a resistive switching layer on a Glass/Indium Tin Oxide (ITO) substrate. Our perovskite solar cells have been developed over the fully solution processed electron transport layer (ETL) which is a combination of SnO₂ and mesoporous (m)-TiO₂ scaffold layers. Hysteresis behaviour was observed in the current-voltage analysis achieving high ratio of ON & OFF current under dark and ambient conditions. Proposed perovskite-based Glass/ITO/SnO₂/m-TiO₂/CH₃NH₃PbI₃/Au device has a hole transport layer (HTL) free structure, which is mainly responsible for a large ratio of ON & OFF current. The presence of voids in the scaffold m-TiO₂ layer are also accountable for increasing electron/hole path length which escalates the recombination rate at the surface of the ETL/perovskite interface resulting in large hysteresis in the I-V curve. This memristor device operates at a low energy due to SnO₂ layer's higher electron mobility and wide energy band gap. Our experimental results also show the dependency of voltage scan range & rate of scanning on the hysteresis behaviour in dark conditions. This memristive behaviour of the proposed device depicts drift in hysteresis loop with respect to the number of cycles, which would have a significant impact in neuromorphic applications. Moreover, due to the identical fabrication process of the proposed perovskite-based memristor device and perovskite solar cells, this device could be integrated inside a photovoltaic array to work as a power-on-chip device, where generation and computation could be possible on the same substrate for memory and neuromorphic applications.