Energy Transfer from Quantum Dots to Graphene and MoS2: The Role of Absorption and Screening in Two-Dimensional Materials

2D Titanium Carbide MXene and Single-Molecule Fluorescence: Distance-Dependent Nonradiative Energy Transfer and Leaflet-Resolved Dye Sensing in Lipid Bilayers

Despite their growing popularity, many fundamental properties and applications of MXene materials remain underexplored. Here, the nonradiative energy transfer properties of 2D titanium carbide MXene are investigated and their application in single-molecule biosensing is explored for the first time. DNA origami positioners are used for single dye placement immobilized by a specific chemistry based on glycine-MXene interactions, allowing precise control of their orientation on the surface. Each DNA origami structure carries a single dye molecule at predetermined heights. Single-molecule fluorescence confocal microscopy reveals that energy transfer of an organic emitter (ATTO 542) on transparent thin films made of spincast Ti3C2Tx flakes follows a cubic distance dependence, where 50% of energy transfer efficiency is reached at 2.7 nm (d0). MXenes are applied as short-distance spectroscopic nanorulers, determining z distances of dye-labeled supported lipid bilayers fused on MXene's hydrophilic surface. Hydration layer (2.1 nm) and lipid bilayer thickness (4.5 nm) values that agree with the literature are obtained. These results highlight titanium carbide MXenes as promising substrates for single-molecule biosensing of ultrathin assemblies, owing to their sensitivity near the interface, a distance regime that is typically inaccessible to other energy transfer tools.

Expanding the range of graphene energy transfer with multilayer graphene

The interaction between single emitters and graphene in the context of energy transfer has attracted significant attention due to its potential applications in fields such as biophysics and super-resolution microscopy. In this study, we investigate the influence of the number of graphene layers on graphene energy transfer (GET) by placing single dye molecules at defined distances from monolayer, bilayer, and trilayer graphene substrates. We employ DNA origami nanostructures as chemical adapters to position the dye molecules precisely. Fluorescence lifetime measurements and analysis reveal an additive effect of graphene layers on the energy transfer rate extending the working range of GET up to distances of approximately 50-60 nm. Moreover, we show that switching a DNA pointer strand between two positions on a DNA origami nanostructure at a height of >28 nm above graphene is substantially better visualized with multilayer graphene substrates suggesting enhanced capabilities for applications such as biosensing and super-resolution microscopy for larger systems and distances. This study provides insights into the influence of graphene layers on energy transfer dynamics and offers new possibilities for exploiting graphene's unique properties in various nanotechnological applications.

Mixed-Dimensional van der Waals Heterostructure (2D ReS2/0D MoS2 Quantum Dots)-Based Broad Spectral Range with Ultrahigh-Responsive Photodetector

The remarkable properties of two-dimensional (2D) materials have led to significant advancements in photodetection and optoelectronics research. Currently, there are many successful methods that are employed to improve the responsivity of photodetectors, but the limited spectral range of the device remains a limitation. This work demonstrates the development of a mixed-dimensional (2D/0D) hybrid photodetector device fabricated using chemical vapor deposition (CVD)-grown monolayer ReS2 and solution-processed MoS2 quantum dots (QDs). The mixed dimensionality of 2D (ReS2) and zero-dimensional (0D) MoS2 QDs assist in improving the spectral range of the device [ultraviolet (360 nm) to near-infrared (780 nm)]. Further, due to the work function difference between ReS2 and MoS2 QDs, the built-in electric field across the mixed-dimensional interface promotes effective charge separation and migration, resulting in improved responsivities of the device. The calculated responsivities of the fabricated photodetector are 5.4 × 102, 3.3 × 102, and 2.6 × 102 A/W when subjected to visible, UV, and NIR light illumination, which is remarkable when compared to the existing reports on broadband photodetection. The mixed-dimensionality heterostructure coupled with contact engineering paves the way for highly responsive broadband photodetectors for potential applications in security, healthcare, etc.

Possible charge ordering and anomalous transport in graphene/graphene quantum dot heterostructure

Observations of superconductivity and charge density waves (CDW) in graphene have been elusive thus far due to weak electron-phonon coupling (EPC) interactions. Here, we report a unique observation of anomalous transport and multiple charge ordering phases at high temperatures (T1∼213K,T2∼325K) in a 0D-2D van der Waals (vdW) heterostructure comprising of single layer graphene (SLG) and functionalized (amine) graphene quantum dots (GQD). The presence of functionalized GQD contributed to charge transfer with shifting of the Dirac point ∼ 0.05 eV above the Fermi level (ab initio   simulations) and carrier densityn∼-0.3×1012 cm-2confirming p-doping in SLG and two-fold increase in EPC interaction was achieved. Moreover, we elucidate the interplay between electron-electron and electron-phonon interactions to substantiate high temperature EPC driven charge ordering in the heterostructure through analyses of magnetotransport and weak anti-localization (WAL) framework. Our results provide impetus to investigate strongly correlated phenomena such as CDW and superconducting phase transitions in novel graphene based heterostructures.

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.

Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a highly promising platform for the development of photodetectors (PDs) owing to their remarkable electronic and optoelectronic properties. Highly effective PDs can be obtained by making use of the exceptional properties of 2D materials, such as their high transparency, large charge carrier mobility, and tunable electronic structure. The photodetection mechanism in 2D TMD-based PDs is thoroughly discussed in this article, with special attention paid to the key characteristics that set them apart from PDs based on other integrated materials. This review examines how single TMDs, TMD-TMD heterostructures, TMD-graphene (Gr) hybrids, TMD-MXene composites, TMD-perovskite heterostructures, and TMD-quantum dot (QD) configurations show advanced photodetection. Additionally, a thorough analysis of the recent developments in 2D TMD-based PDs, highlighting their exceptional performance capabilities, including ultrafast photo response, ultrabroad detectivity, and ultrahigh photoresponsivity, attained through cutting-edge methods is provided. The article conclusion highlights the potential for ground-breaking discoveries in this fast developing field of research by outlining the challenges faced in the field of PDs today and providing an outlook on the prospects of 2D TMD-based PDs in the future.

Directly Unveiling the Energy Transfer Dynamics between Alq3 Molecules and Si by Ultrafast Optical Pump-Probe Spectroscopy

The energy transfer (ET) between organic molecules and semiconductors is a crucial mechanism for enhancing the performance of semiconductor-based optoelectronic devices, but it remains undiscovered. Here, ultrafast optical pump-probe spectroscopy was utilized to directly reveal the ET between organic Alq3 molecules and Si semiconductors. Ultrathin SiO2 dielectric layers with a thickness of 3.2-10.8 nm were inserted between Alq3 and Si to prevent charge transfer. By means of the ET from Alq3 to Si, the SiO2 thickness-dependent relaxation dynamics of photoexcited carriers in Si have been unambiguously observed on the transient reflectivity change (ΔR/R) spectra, especially for the relaxation process on a time scale of 200-350 ps. In addition, these findings also agree with the results of our calculation in a model of long-range dipole-dipole interactions, which provides critical information for developing future optoelectronic devices.

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.

Exciton-Sensitized Second-Harmonic Generation in 2D Heterostructures

The efficient optical second-harmonic generation (SHG) of two-dimensional (2D) crystals, coupled with their atomic thickness, which circumvents the phase-match problem, has garnered considerable attention. While various 2D heterostructures have shown promising applications in photodetectors, switching electronics, and photovoltaics, the modulation of nonlinear optical properties in such heterosystems remains unexplored. In this study, we investigate exciton-sensitized SHG in heterobilayers of transition metal dichalcogenides (TMDs), where photoexcitation of one donor layer enhances the SHG response of the other as an acceptor. We utilize polarization-resolved interferometry to detect the SHG intensity and phase of each individual layer, revealing the energetic match between the excitonic resonances of donors and the SHG enhancement of acceptors for four TMD combinations. Our results also uncover the dynamic nature of interlayer coupling, as made evident by the dependence of sensitization on interlayer gap spacing and the average power of the fundamental beam. This work provides insights into how the interlayer coupling of two different layers can modify nonlinear optical phenomena in 2D heterostructures.

Non-local dielectric effects in nanoscience

The physical properties of charges and excitations in nanoscale materials are influenced both by the dielectric properties of the material itself and the surrounding environment. This non-local dielectric effect was first discussed in the context of molecules in solvents over a century ago. In this perspective, we discuss non-local dielectric effects in zero-dimensional, one-dimensional, and two-dimensional nanoscale systems.

Energy transfer and charge transfer between semiconducting nanocrystals and transition metal dichalcogenide monolayers

Nowadays, as a result of the emergence of low-dimensional hybrid structures, the scientific community is interested in their interfacial carrier dynamics, including charge transfer and energy transfer. By combining the potential of transition metal dichalcogenides (TMDs) and nanocrystals (NCs) with low-dimensional extension, hybrid structures of semiconducting nanoscale matter can lead to fascinating new technological scenarios. Their characteristics make them intriguing candidates for electronic and optoelectronic devices, like transistors or photodetectors, bringing with them challenges but also opportunities. Here, we will review recent research on the combined TMD/NC hybrid system with an emphasis on two major interaction mechanisms: energy transfer and charge transfer. With a focus on the quantum well nature in these hybrid semiconductors, we will briefly highlight state-of-the-art protocols for their structure formation and discuss the interaction mechanisms of energy versus charge transfer, before concluding with a perspective section that highlights novel types of interactions between NCs and TMDs.

A novel fluorescent strategy for Golgi protein 73 determination based on aptamer/nitrogen-doped graphene quantum dots/molybdenum disulfide @ reduced graphene oxide nanosheets

The effective detection of biomarkers associated with hepatocellular carcinoma (HCC) is of great importance. Golgi protein 73 (GP73), a serum biomarker of HCC, has better diagnostic value than Alpha-fetoprotein (AFP) has been reported. In this paper, highly accurate fluorescence sensing platform for detecting GP73 was constructed based on fluorescence resonance energy transfer (FRET), in which nitrogen-doped graphene quantum dots (NGQDs) labelling with GP73 aptamer (GP73_Apt) was used as fluorescence probe, and molybdenum disulfide @ reduced graphene oxide (MoS₂@RGO) nanosheets was used as fluorescent receptors. MoS₂@RGO nanosheets can quench the fluorescence of NGQDs-GP73_Apt owing to FRET mechanisms. In the presence of GP73, the NGQDs-GP73_Apt specifically bound with GP73 to from the deployable structures, making NGQDs-GP73_Apt far away from MoS₂@RGO nanosheets, blocking the FRET process, resulting in fluorescence recovery of NGQDs-GP73_Apt. Under optimal conditions, the recovery intensity of fluorescence in the detection system is linearly related to the concentration of GP73 in the range of 5 ng/mL - 100 ng/mL and the limit of detection is 4.54 ng/mL (S/N = 3). Moreover, detection of GP73 was performed in human serum samples with good recovery (97.21-100.83%). This platform provides a feasible method for the early diagnosis of HCC, and can be easily extended to the detection of other biomarkers.

Trends in energy and charge transfer in 2D and integrated perovskite heterostructures

Two-dimensional (2D) van der Waals (vdW) heterostructured transition metal dichalcogenides (TMDs) open up new possibilities for a wide range of optoelectronic applications. Interlayer couplings are responsible for several fascinating physics phenomena, which are in addition to the multifunctionalities that have been discovered in the field of optoelectronics. These couplings can influence the overall charge, or the energy transfer processes via stacking, separation, and dielectric angles. This focused review article summarizes the most recent and promising strategies for interlayer exciton emission in 2D or integrated perovskites and TMD heterostructures. These types of devices require a thorough comprehension and effective control of interlayer couplings in order to realize their functionalities and improve performance, which is demonstrated in this article with the energy or charge transfer mechanisms in the individual devices. An ideal platform for examining the interlayer coupling and the related physical processes is provided by a summary of the recent research findings in 2D perovskites and TMDs. Furthermore, it would encourage more investigation into the comprehension and regulation of excitonic effects and the related optoelectronic applications in vdW heterostructures over a broad spectral response range. Finally, the current challenges and prospects are summarized in this paper.

Nanoscale Control of DNA-Linked MoS2-Quantum Dot Heterostructures

The ability to control the assembly of mixed-dimensional heterostructures with nanoscale control is key for the fabrication of novel nanohybrid systems with new functionalities, particularly for optoelectronics applications. Herein we report a strategy to control the assembly of heterostructures and tune their electronic coupling employing DNA as a linker. We functionalized MoS2 nanosheets (NSs) with biotin-terminated dsDNA employing three different chemical strategies, namely, thiol, maleimide, and aryl diazonium. This allowed us to then tether streptavidinated quantum dots (QDs) to the DNA functionalized MoS2 surface via biotin-avidin recognition. Nanoscale control over the separation between QDs and NSs was achieved by varying the number of base pairs (bp) constituting the DNA linker, between 10, 20, and 30 bp, corresponding to separations of 3.4, 6.8, and 13.6 nm, respectively. Spectroscopic data confirmed the successful functionalization, while atomic force and transmission electron microscopy were employed to image the nanohybrids. In solution steady-state and time-resolved photoluminescence demonstrated the electronic coupling between the two nanostructures, that in turn was observed to progressively scale as a function of DNA linker employed and hence distance between the two nanomoieties in the hybrids.

Long-range transport and ultrafast interfacial charge transfer in perovskite/monolayer semiconductor heterostructure for enhanced light absorption and photocarrier lifetime

Atomically thin two-dimensional transition metal dichalcogenides (TMDs) have shown great potential for optoelectronic applications, including photodetectors, phototransistors, and spintronic devices. However, the applications of TMD-based optoelectronic devices are severely restricted by their weak light absorption and short exciton lifetime due to their atomically thin nature and strong excitonic effect. To simultaneously enhance the light absorption and photocarrier lifetime of monolayer semiconductors, here, we report 3D/2D perovskite/TMD type II heterostructures by coupling solution processed highly smooth and ligand free CsPbBr3 film with MoS2 and WS2 monolayers. By time-resolved spectroscopy, we show interfacial hole transfer from MoS2 (WS2) to the perovskite layer occurs in an ultrafast time scale (100 and 350 fs) and interfacial electron transfer from ultrathin CsPbBr3 to MoS2 (WS2) in ∼3 (9) ps, forming a long-lived charge separation with a lifetime of >20 ns. With increasing CsPbBr3 thickness, the electron transfer rate from CsPbBr3 to TMD is slower, but the efficiency remains to be near-unity due to coupled long-range diffusion and ultrafast interfacial electron transfer. This study indicates that coupling solution processed lead halide perovskites with strong light absorption and long carrier diffusion length to monolayer semiconductors to form a type II heterostructure is a promising strategy to simultaneously enhance the light harvesting capability and photocarrier lifetime of monolayer semiconductors.

A high-responsivity CsPbBr3 nanowire photodetector induced by CdS@CdxZn1-xS gradient-alloyed quantum dots

Benefitting from excellent thermal and moisture stability, inorganic halide perovskite materials have established themselves quickly as promising candidates for fabricating photoelectric devices. However, due to their high trap state density and rapid carrier recombination rate, the photoelectric conversion efficiencies of current inorganic halide perovskite materials are still lower than expected. Here, after systematic research on the optoelectronic properties of CsPbBr₃ nanowires (NWs) decorated with binary CdS quantum dots (QDs), CdS@ZnS core/shell QDs, and gradient-alloyed CdS@Cd_xZn_1-xS QDs, respectively, we proposed a facile method to improve the quantum efficiency of perovskite-based photodetectors with low cost, in which the aforementioned QDs are firstly integrated with CsPbBr₃ NWs, which act as a photosensitive layer. Notably, the responsivity of the CsPbBr₃ NW photodetector decorated with CdS@Cd_xZn_1-xS QDs was enhanced about 10-fold compared to that of pristine CsPbBr₃ NW devices. This value is far superior to those for hybrids composed of binary CdS QDs and CdS@ZnS core/shell QDs. The high responsivity enhancement phenomena are interpreted based on the unique funnel-shaped energy level of CdS@Cd_xZn_1-xS QDs, which is favorable for light-harvesting and photocarrier separation. This work indicates that our unique QD/NW hybrid nanostructure is a desirable building block for fabricating high-performance photodetectors.

Probing the charge transfer and electron-hole asymmetry in graphene-graphene quantum dot heterostructure

In recent years, graphene-based van der Waals (vdW) heterostructures have come into prominence showcasing interesting charge transfer dynamics which is significant for optoelectronic applications. These novel structures are highly tunable depending on several factors such as the combination of the two-dimensional materials, the number of layers and band alignment exhibiting interfacial charge transfer dynamics. Here, we report on a novel graphene based 0D-2D vdW heterostructure between graphene and amine-functionalized graphene quantum dots (GQD) to investigate the interfacial charge transfer and doping possibilities. Using a combination ofab initiosimulations and Kelvin probe force microscopy (KPFM) measurements, we confirm that the incorporation of functional GQDs leads to a charge transfer induced p-type doping in graphene. A shift of the Dirac point by 0.05 eV with respect to the Fermi level (E_F) in the graphene from the heterostructure was deduced from the calculated density of states. KPFM measurements revealed an increment in the surface potential of the GQD in the 0D-2D heterostructure by 29 mV with respect to graphene. Furthermore, we conducted power dependent Raman spectroscopy for both graphene and the heterostructure samples. An optical doping-induced gating effect resulted in a stiffening of theGband for electrons and holes in both samples (graphene and the heterostructure), suggesting a breakdown of the adiabatic Born-Oppenheimer approximation. Moreover, charge imbalance and renormalization of the electron-hole dispersion under the additional influence of the doped functional GQDs is pointing to an asymmetry in conduction and carrier mobility.

A study on structural, optical, and electrical characteristics of perovskite CsPbBr3 QD/2D-TiSe2 nanosheet based nanocomposites for optoelectronic applications

Lead halide perovskite (CsPbBr₃) quantum dots (QDs) and two-dimensional (2D) layered transition metal dichalcogenides have a significant application in solution-processed optoelectronic devices. Here, we report the oleylamine-assisted exfoliation of TiSe₂ nanosheets (NSs) in dichlorobenzene with high concentration and stable dispersion. The functionalized TiSe₂ NSs were used to synthesize the solution-processed perovskite CsPbBr₃ QD/TiSe₂ NS-based nanocomposite. The perovskite QDs and TiSe₂ NSs were characterized by different techniques. The strong photoluminescence (PL) quenching and decreased lifetime decay of the nanocomposite indicates efficient charge transfer from photo-excited CsPbBr₃ to TiSe₂ NSs. The calculated charge-transfer rate constant (K_ET) from photo-excited CsPbBr₃ to TiSe₂ NSs increased from 1.50 × 10⁸ to 2.79 × 10⁸ s^-1 in different concentrations of TiSe₂ NSs (5 to 20 μg mL^-1), respectively. Furthermore, the photo-currents of CsPbBr₃ QD/TiSe₂ NS nanocomposite devices were dramatically enhanced ∼2 times compared to pristine CsPbBr₃ QD based devices, which supports the charge transfer and charge separation in nanocomposite devices.

Tunable Performance of Quantum Dot-MoS2 Hybrid Photodetectors via Interface Engineering

Heterostructures of quantum dots (QDs) and two-dimensional (2D) materials show promising potential for photodetection applications owing to their combination of high optical absorption and good in-plane carrier mobility. In this work, the performance of QD-2D photodetectors is tuned by band engineering. Devices are fabricated by coating MoS₂ nanosheets with InP QDs, type-I core-shell InP/ZnS QDs, and type-II core-shell InP/CdS QDs. Comparative spectroscopic and photoelectric studies of different hybrids show that the energy band alignment and shell thickness can influence the efficiency of charge transfer (CT), energy transfer (ET), and defect-related processes between QDs and MoS₂. Benefiting from efficient CT between the QDs and MoS₂, a significant enhancement of responsivity and detectivity is observed in thick-shell InP/CdS QD-MoS₂ devices. Our results demonstrate the feasibility of using core-shell QDs for regulating the ET and CT efficiency in heterostructures and highlight the importance of interface band design in QD-2D and other low-dimensional photodetectors.

An upgraded 2D nanosheet-based FRET biosensor: insights into avoiding background and eliminating effects of background fluctuations

We demonstrated a new class of 2D nanosheet-based FRET biosensor utilizing vertically oriented MoS₂ nanosheets on a magnetic nanocarrier. Compared with the non-separated biosensor under identical conditions, this upgraded one can avoid the background signal of the system and eliminate the effects of background fluctuations, which produces more excellent detection methods.

Mechanistic Investigation of Molybdenum Disulfide Defect Photoluminescence Quenching by Adsorbed Metallophthalocyanines

Lattice defects play an important role in determining the optical and electrical properties of monolayer semiconductors such as MoS₂. Although the structures of various defects in monolayer MoS₂ are well studied, little is known about the nature of the fluorescent defect species and their interaction with molecular adsorbates. In this study, the quenching of the low-temperature defect photoluminescence (PL) in MoS₂ is investigated following the deposition of metallophthalocyanines (MPcs). The quenching is found to significantly depend on the identity of the phthalocyanine metal, with the quenching efficiency decreasing in the order CoPc > CuPc > ZnPc, and almost no quenching by metal-free H₂Pc is observed. Time-correlated single photon counting (TCSPC) measurements corroborate the observed trend, indicating a decrease in the defect PL lifetime upon MPc adsorption, and the gate voltage-dependent PL reveals the suppression of the defect emission even at large Fermi level shifts. Density functional theory modeling argues that the MPc complexes stabilize dark negatively charged defects over luminescent neutral defects through an electrostatic local gating effect. These results demonstrate the control of defect-based excited-state decay pathways via molecular electronic structure tuning, which has broad implications for the design of mixed-dimensional optoelectronic devices.

Near-Field Energy Transfer into Silicon Inversely Proportional to Distance Using Quasi-2D Colloidal Quantum Well Donors

Silicon is the most prevalent material system for light-harvesting applications; however, its inherent indirect bandgap and consequent weak absorption limits its potential in optoelectronics. This paper proposes to address this limitation by combining the sensitization of silicon with extraordinarily large absorption cross sections of quasi-2D colloidal quantum well nanoplatelets (NPLs) and to demonstrate excitation transfer from these NPLs to bulk silicon. Here, the distance dependency, d, of the resulting Förster resonant energy transfer from the NPL monolayer into a silicon substrate is systematically studied by tuning the thickness of a spacer layer (of Al₂ O₃ ) in between them (varied from 1 to 50 nm in thickness). A slowly varying distance dependence of d^-1 with 25% efficiency at a donor-acceptor distance of 20 nm is observed. These results are corroborated with full electromagnetic solutions, which show that the inverse distance relationship emanates from the delocalized electric field intensity across both the NPL layer and the silicon because of the excitation of strong in-plane dipoles in the NPL monolayer. These findings pave the way for using colloidal NPLs as strong light-harvesting donors in combination with crystalline silicon as an acceptor medium for application in photovoltaic devices and other optoelectronic platforms.

Near-Unity-Efficiency Energy Transfer from Perovskite to Monolayer Semiconductor through Long-Range Migration and Asymmetric Interfacial Transfer

van der Waals heterostructures combining perovskites of strong light absorption with atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for light-harvesting and optoelectronic applications. However, current research studies integrating TMDs with low-dimensional perovskite nanomaterials generally suffer from poor carrier/energy transport and harnessing, stemming from poor interfacial interaction due to the nanostructured nature and ligands on surface/interface. To overcome the limitations, here, we report prototypical three-dimensional (3D)/2D perovskite/TMD heterostructures by combing highly smooth and ligand-free CsPbBr₃ film with a WSe₂ monolayer. We show that the energy transfer at interface occurs through asymmetric two-step charge-transfer process, with ultrafast hole transfer in ∼200 fs and subsequent electron transfer in ∼10 ps, driven by the asymmetric type I band alignment. The energy migration and transfer from CsPbBr₃ film to WSe₂ can be well described by a one-dimensional diffusion model with a carrier diffusion length of ∼500 nm in CsPbBr₃ film. Thanks to the long-range carrier migration and ultrafast interfacial transfer, highly efficient (>90%) energy transfer to WSe₂ can be achieved with CsPbBr₃ film as thick as ∼180 nm, which can capture most of the light above its band gap. The efficient light and energy harvesting in perovskite/TMD 3D/2D heterostructures suggest great promise in optoelectronic and photonic devices.

Extraordinary Photostability and Davydov Splitting in BN-Sandwiched Single-Layer Tetracene Molecular Crystals

Two-dimensional molecular crystals have been beyond the reach of systematic investigation because of the lack or instability of their well-defined forms. Here, we demonstrate drastically enhanced photostability and Davydov splitting in single and few-layer tetracene (Tc) crystals sandwiched between inorganic 2D crystals of graphene or hexagonal BN. Molecular orientation and long-range order mapped with polarized wide-field photoluminescence imaging and optical second-harmonic generation revealed high crystallinity of the 2D Tc and its distinctive orientational registry with the 2D inorganic crystals, which were also verified with first-principles calculations. The reduced dielectric screening in 2D space was manifested by enlarged Davydov splitting and attenuated vibronic sidebands in the excitonic absorption and emission of monolayer Tc crystals. Photostable 2D molecular crystals and their size effects will lead to novel photophysical principles and photonic applications.

Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

A memristor is a two-terminal device with nonvolatile resistive switching (RS) behaviors. Recently, memristors have been highly desirable for both fundamental research and technological applications because of their great potential in the development of high-density memory technology and neuromorphic computing. Benefiting from the unique two-dimensional (2D) layered structure and outstanding properties, 2D materials have proven to be good candidates for use in gate-tunable, highly reliable, heterojunction-compatible, and low-power memristive devices. More intriguing, stable and reliable nonvolatile RS behaviors can be achieved in multi- and even monolayer 2D materials, which seems unlikely to be achieved in traditional oxides with thicknesses less than a few nanometers because of the leakage currents. Moreover, such two-terminal devices show a series of synaptic functionalities, suggesting applications in simulating a biological synapse in the neural network. In this review article, we summarize the recent progress in memristors based on inorganic and organic 2D materials, from the material synthesis, device structure and fabrication, and physical mechanism to some versatile memristors based on diverse 2D materials with good RS properties and memristor-based synaptic applications. The development prospects and challenges at the current stage are then highlighted, which is expected to inspire further advancements and new insights into the fields of information storage and neuromorphic computing.

Simple MoS2-Nanofiber Paper-Based Fluorescence Immunosensor for Point-of-Care Detection of Programmed Cell Death Protein 1

Programmed cell death protein 1 (PD-1) is one of the coinhibitory checkpoints upon T cell activation, the abnormal expression of which severely threatens host immune modulatation for chronic infection. Thus, fast and sensitive monitoring of PD-1 is of vital importance for early diagnosis and cancer treatment. The current detection methods largely based on enzyme-linked immunosorbent assay (ELISA) require time-consuming incubation and complicated washing steps. Herein, we designed a simple and portable nanofiber paper (NFP)-based fluorescence "off-on" immunosensor for PD-1 rapid determination. Molybdenum disulfide (MoS₂) nanosheets modified NFP (MoS₂-NFP) was employed for adsorbing and immobilizing CdSe/ZnS quantum dots-antibody (QDs-Ab) complex to construct a ready-to-use fluorescent immunosensor. The fluorescent signal of QDs-Ab was initially quenched by MoS₂ under the Förster resonance energy transfer (FRET) effect. When the PD-1 target was specifically captured onto NFP by immunization, the QDs-Ab-PD-1 complex was promptly desorbed from the MoS₂-NFP surface, resulting in FRET impediment and fluorescence recovery. As an alternative quenching agent, graphene oxide (GO) served as a contrast to investigate NFP-based sensing performance. Owing to superior quenching and desorption efficiency, the MoS₂-NFP-based fluorescence immunosensor exhibited nearly 2-fold lower detection limit (85.5 pg/mL) than GO-NFP-based sensor (151 pg/mL) for PD-1 monitoring. Excellent selectivity and satisfactory recovery in PD-1 mouse cell culture supernatant samples were confirmed as well. In addition, the comparable detectability of the MoS₂-NFP-based immunosensor was accurately evaluated by a standard PD-1 mouse ELISA kit. This study displayed a simple, rapid, low-cost, and portable point-of-care PD-1 assay, indicating its broad application prospect toward clinical diagnoses.

Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) represent a class of semiconducting two-dimensional (2D) materials with exciting properties. In particular, defects in 2D-TMDs and their molecular interactions with the environment can crucially affect their physical and chemical properties. However, mapping the spatial distribution and chemical reactivity of defects in liquid remains a challenge. Here, we demonstrate large area mapping of reactive sulfur-deficient defects in 2D-TMDs in aqueous solutions by coupling single-molecule localization microscopy with fluorescence labeling using thiol chemistry. Our method, reminiscent of PAINT strategies, relies on the specific binding of fluorescent probes hosting a thiol group to sulfur vacancies, allowing localization of the defects with an uncertainty down to 15 nm. Tuning the distance between the fluorophore and the docking thiol site allows us to control Föster resonance energy transfer (FRET) process and reveal grain boundaries and line defects due to the local irregular lattice structure. We further characterize the binding kinetics over a large range of pH conditions, evidencing the reversible adsorption of the thiol probes to the defects with a subsequent transitioning to irreversible binding in basic conditions. Our methodology provides a simple and fast alternative for large-scale mapping of nonradiative defects in 2D materials and can be used for in situ and spatially resolved monitoring of the interaction between chemical agents and defects in 2D materials that has general implications for defect engineering in aqueous condition.

Micro-photoluminescence of Carbon Dots Deposited on Twisted Double-Layer Graphene Grown by Chemical Vapor Deposition

Carbon-based nanomaterials, such as carbon dots (CDs) and graphene (Gr), feature outstanding optical and electronic properties. Hence, their integration in optoelectronic and photonic devices is easier thanks to their low dimensionality and offers the possibility to reach high-quality performances. In this context, the combination of CDs and Gr into new nanocomposite materials CDs/Gr can further improve their optoelectronic properties and eventually create new ones, paving the way for the development of advanced carbon nanotechnology. In this work, we have thoroughly investigated the structural and emission properties of CDs deposited on single-layer and bilayer graphene lying on a SiO₂/Si substrate. A systematic Raman analysis points out that bilayer (BL) graphene grown by chemical vapor deposition does not always respect the Bernal (AB) stacking, but it is rather a mixture of twisted bilayer (t-BL) featuring domains with different twist angles. Moreover, in-depth micro-photoluminescence measurements, combined with atomic force microscopy (AFM) morphological analysis, show that CD emission efficiency is strongly depleted by the presence of graphene and in particular is dependent on the number of layers as well as on the twist angle of BL graphene. Finally, we propose a model which explains these results on the basis of photoinduced charge-transfer processes, taking into account the energy levels of the hybrid nanosystem formed by coupling CDs with t-BL/SiO₂.

Quantum Energy and Charge Transfer at Two-Dimensional Interfaces

Energy and charge transfer processes in interacting donor-acceptor systems are the bedrock of many fundamental studies and technological applications ranging from biosensing to energy storage and quantum optoelectronics. Central to the understanding and utilization of these transfer processes is having full control over the donor-acceptor distance. With their atomic thickness and ease of integrability, two-dimensional materials are naturally emerging as an ideal platform for the task. Here, we review how van der Waals semiconductors are shaping the field. We present a selection of some of the most significant demonstrations involving transfer processes in layered materials that deepen our understanding of transfer dynamics and are leading to intriguing practical realizations. Alongside current achievements, we discuss outstanding challenges and future opportunities.

Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects

In this review, we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots (QDs)) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. In particular, emission decay and FRET rates near a plane interface between two dielectrics or a dielectric and a metal are discussed and their dependence upon relevant parameters is demonstrated. The cases of direct (II–VI) and indirect (silicon) band gap semiconductors are compared. We cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. Some further effects, such as multiple exciton generation, are also discussed. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.

Directed Energy Transfer from Monolayer WS2 to Near-Infrared Emitting PbS-CdS Quantum Dots

Heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDs) and inorganic semiconducting zero-dimensional (0D) quantum dots (QDs) offer useful charge and energy transfer pathways, which could form the basis of future optoelectronic devices. To date, most have focused on charge transfer and energy transfer from QDs to TMDs, that is, from 0D to 2D. Here, we present a study of the energy transfer process from a 2D to 0D material, specifically exploring energy transfer from monolayer tungsten disulfide (WS₂) to near-infrared emitting lead sulfide-cadmium sulfide (PbS-CdS) QDs. The high absorption cross section of WS₂ in the visible region combined with the potentially high photoluminescence (PL) efficiency of PbS QD systems makes this an interesting donor-acceptor system that can effectively use the WS₂ as an antenna and the QD as a tunable emitter, in this case, downshifting the emission energy over hundreds of millielectron volts. We study the energy transfer process using photoluminescence excitation and PL microscopy and show that 58% of the QD PL arises due to energy transfer from the WS₂. Time-resolved photoluminescence microscopy studies show that the energy transfer process is faster than the intrinsic PL quenching by trap states in the WS₂, thus allowing for efficient energy transfer. Our results establish that QDs could be used as tunable and high PL efficiency emitters to modify the emission properties of TMDs. Such TMD-QD heterostructures could have applications in light-emitting technologies or artificial light-harvesting systems or be used to read out the state of TMD devices optically in various logic and computing applications.

Design of Core-Shell Quantum Dots-3D WS2 Nanowall Hybrid Nanostructures with High-Performance Bifunctional Sensing Applications

Transition metal dichalcogenides (TMDCs) have recently attracted a tremendous amount of attention owing to their superior optical and electrical properties as well as the interesting and various nanostructures that are created by different synthesis processes. However, the atomic thickness of TMDCs limits the light absorption and results in the weak performance of optoelectronic devices, such as photodetectors. Here, we demonstrate the approach to increase the surface area of TMDCs by a one-step synthesis process of TMDC nanowalls from WO_x into three-dimensional (3D) WS₂ nanowalls. By utilizing a rapid heating and rapid cooling process, the formation of 3D nanowalls with a height of approximately 150 nm standing perpendicularly on top of the substrate can be achieved. The combination of core-shell colloidal quantum dots (QDs) with three different emission wavelengths and 3D WS₂ nanowalls further improves the performance of WS₂-based photodetector devices, including a photocurrent enhancement of 320-470% and shorter response time. The significant results of the core-shell QD-WS₂ hybrid devices can be contributed by the high nonradiative energy transfer efficiency between core-shell QDs and the nanostructured material, which is caused by the spectral overlap between the emission of core-shell QDs and the absorption of WS₂. Besides, outstanding NO₂ gas-sensing performance of core-shell QDs/WS₂ devices can be achieved with an extremely low detection limit of 50 ppb and a fast response time of 26.8 s because of local p-n junctions generated by p-type 3D WS₂ nanowalls and n-type core-shell CdSe-ZnS QDs. Our work successfully reveals the energy transfer phenomenon in core-shell QD-WS₂ hybrid devices and shows great potential in commercial multifunctional sensing applications.

Trion-Mediated Förster Resonance Energy Transfer and Optical Gating Effect in WS2/hBN/MoSe2 Heterojunction

van der Waals two-dimensional layered heterostructures have recently emerged as a platform, where the interlayer couplings give rise to interesting physics and multifunctionalities in optoelectronics. Such couplings can be rationally controlled by dielectric, separation, and stacking angles, which affect the overall charge or energy-transfer processes, and emergent potential landscape for twistronics. Herein, we report the efficient Förster resonance energy transfer (FRET) in WS₂/hBN/MoSe₂ heterostructure, probed by both steady-state and time-resolved optical spectroscopy. We clarified the evolution behavior of the electron-hole pairs and free electrons from the trions, that is, ∼59.9% of the electron-hole pairs could transfer into MoSe₂ by FRET channels (∼38 ps) while the free electrons accumulate at the WS₂/hBN interface to photogate MoSe₂. This study presents a clear picture of the FRET process in two-dimensional transition-metal dichalcogenides' heterojunctions, which establishes the scientific foundation for developing the related heterojunction optoelectronic devices.

Excitonic Energy Transfer in Heterostructures of Quasi-2D Perovskite and Monolayer WS2

Quasi-two-dimensional (2D) organic-inorganic hybrid perovskite is a re-emerging material with strongly excitonic absorption and emission properties that are attractive for photonics and optoelectronics. Here we report the experimental observation of excitonic energy transfer (ET) in van der Waals heterostructures consisting of quasi-2D hybrid perovskite (C₆H₅C₂H₄NH₃)₂PbI₄ (PEPI) and monolayer WS₂. Photoluminescence excitation spectroscopy reveals a distinct ground exciton resonance feature of perovskite, evidencing ET from perovskite to WS₂. We find unexpectedly high photoluminescence enhancement factors of up to ∼8, which cannot be explained by single-interface ET. Our analysis reveals that interlayer ET across the bulk of the layered perovskite also contributes to the large enhancement factor. Further, from the weak temperature dependence of the lower-limit ET rate, which we found to be ∼3 ns^-1, we conclude that the Förster-type mechanism is responsible.

Strong suppression of emission quenching in core quantum dots coupled to monolayer MoS2

Non-radiative processes like energy and charge transfer in 0D-2D semiconductor quantum dot (QD)-transition metal dichalcogenides (TMDs) and other two-dimensional layered materials, like graphene and analogs, leading to strong quenching of the photoluminescence (PL) of the usually highly emissive QDs, have been widely studied. Here we report control of the emission efficiency of core QDs placed in close proximity to the monolayers of MoS₂. The QDs are transferred in the form of a high-density compact monolayer with the dot-dot separation, δ as well as the MoS₂-QD separation, d, being controlled through chemical methods. While at larger separations we observe some quenching due to non-radiative processes, at smaller separations we observe enhanced emission from QDs on MoS₂ as compared to the reference despite the presence of significant non-radiative charge transfer. Interestingly, at small separations δ, we see evidence of strong dot-dot interactions and a significant red shift of QD PL which enhances spectral overlap with the B exciton of MoS₂. However, we observe significant reduction of PL quenching of QDs relative to longer δ and d cases, despite increased probability of non-radiative resonant energy transfer to MoS₂, due to the enhanced spectral overlap, as well as charge transfer. Significantly we observe that simultaneously the intensity of the B exciton of MoS₂ increases significantly suggesting the possibility of coherent and resonant radiative energy exchange between the 0D excitons in QDs and the 2D B exciton in MoS₂. Our study reveals interesting nanoscale light-matter interaction effects which can suppress quenching of QDs leading to potential applications of these nanoscale materials in light emitting and photonic devices.

Light-Controlled Near-Field Energy Transfer in Plasmonic Metasurface Coupled MoS2 Monolayer

The energy transfer from plasmonic nanostructures to semiconductors has been extensively studied to enhance light-harvesting and tailor light-matter interactions. In this study, the efficient energy transfer from an Au metasurface to monolayered MoS2 within a near-field coupling regime is reported. The metasurface is designed and fabricated to demonstrate strong photoluminescence (PL) and cathodoluminescence (CL) emission spectra. In the coupled heterostructure of MoS2 with a metasurface, both the Raman shift and absorption spectral intensities of monolayered MoS2 are affected. The spectral profile and PL peak position can be tailored owing to the energy transfer between plasmonic nanostructures and semiconductors. This is confirmed by ultrafast lifetime measurement. A theoretical model of two coupled oscillators is proposed, where the expanded general solutions (EGS) of such a model result in a series of eigenvalues that correspond to the renormalization of energy levels in modulated MoS2. The model can predict the peak shift up to tens of nanometers in hybrid structures and hence provides an alternative method to describe energy transfer between metallic structures and two-dimensional (2D) semiconductors. A viable approach for studying light-matter interactions in 2D semiconductors via near-field energy transfer is presented, which may stimulate the applications of functional nanophotonic devices.

Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS2 Photodetector

Non-radiative energy transfer (NRET) from quantum dots (QDs) to monolayer MoS₂ has been shown to greatly enhance the photoresponsivity of the MoS₂ photodetector, lifting the limitations imposed by monolayer absorption thickness. Studies were often performed on a photodetector with a channel length of only a few μm and an active area of a few μm². Here, we demonstrate a QD sensitized monolayer MoS₂ photodetector with a large channel length of 40 μm and an active area of 0.13 mm². The QD sensitizing coating greatly enhances photoresponsivity by 14-fold at 1.3 μW illumination power, as compared with a plain monolayer MoS₂ photodetector without QD coating. The photoresponsivity enhancement increases as QD coating density increases. However, QD coating also causes dark current to increase due to charge doping from QD on MoS₂. At low QD density, the increase of photocurrent is much larger than the increase of dark current, resulting in a significant enhancement of the signal on/off ratio. As QD density increases, the increase of photocurrent becomes slower than the increase of dark current. As a result, photoresponsivity increases, but the on/off ratio decreases. This inverse dependence on QD density is an important factor to consider in the QD sensitized photodetector design.

High-Response, Ultrafast-Speed, and Self-Powered Photodetection Achieved in InP@ZnS-MoS2 Phototransistors with Interdigitated Pt Electrodes

Various hybrid zero-dimensional/two-dimensional (0D/2D) systems have been developed to fabricate phototransistors with better performance compared to two-dimensional (2D) layered materials as well as broaden potential applications. Herein, we integrated environment-friendly InP@ZnS core-shell QDs with high efficiency of light absorption and light-emitting properties with bilayer MoS₂ for the realization of 0D/2D mixed-dimensional phototransistors. Interdigitated (IDT) electrodes with Pt-patterned arrays, acting as light collectors as well as plasmonic resonators, can further enhance light harvesting from the InP@ZnS-MoS₂ hybrid phototransistors, contributing to achieving a photoresponsivity as high as 1374 A·W^-1. Moreover, thanks to the asymmetric Pt/MoS₂ Schottky junction at the source/drain contact, a self-powered characteristic with an ultrafast speed of 21.5 μs was achieved, which is among the best performances for 2D layered material-based phototransistors. In terms of these features, we demonstrated the artificial synapse network with short-time plasticity based on the self-powered photodetection device. Our work reveals the great potential of 0D/2D hybrid phototransistors for high-response, ultrafast-speed, and self-powered photodetectors coupled with artificial neuromorphic function.

Photoluminescence enhancement of MoS2/CdSe quantum rod heterostructures induced by energy transfer and exciton-exciton annihilation suppression

Energy transfer in heterostructures is an essential interface interaction for extraordinary energy conversion properties, which promote promising applications in light-emitting and photovoltaic devices. However, when atomic-layered transition metal dichalcogenides (TMDCs) act as the energy acceptor because of strong Coulomb interactions, the transferred energy can be consumed by nonradiative exciton annihilations, which hampers the development of light-emitting devices. Hence, revealing the mechanism of energy transfer and the related relaxation processes from the aspect of the acceptor in the heterostructure is key to reducing nonradiative loss and optimizing luminescence. Here, we study the exciton dynamics from the standpoint of the acceptor in MoS₂/CdSe quantum rod (QR) heterostructures and realize efficiently enhanced photoluminescence (PL). Through femtosecond pump-probe measurements, it is directly observed that energy transfer from CdSe QRs largely raises the exciton population of the acceptor, MoS₂, providing a larger emission "source". In addition, the dielectric environment introduced by CdSe QRs efficiently enhances the PL by suppressing exciton-exciton annihilation (EEA). This study provides new insights for on-chip applications such as light-emitting diodes and optical conversion devices based on low dimensional semiconductor heterostructures.

Emergent Optoelectronic Properties of Mixed-Dimensional Heterojunctions

ConspectusThe electronic dimensionality of a material is defined by the number of spatial degrees of confinement of its electronic wave function. Low-dimensional semiconductor nanomaterials with at least one degree of spatial confinement have optoelectronic properties that are tunable with size and environment (dielectric and chemical) and are of particular interest for optoelectronic applications such as light detection, light harvesting, and photocatalysis. By combining nanomaterials of differing dimensionalities, mixed-dimensional heterojunctions (MDHJs) exploit the desirable characteristics of their components. For example, the strong optical absorption of zero-dimensional (0D) materials combined with the high charge carrier mobilities of two-dimensional (2D) materials widens the spectral response and enhances the responsivity of mixed-dimensional photodetectors, which has implications for ultrathin, flexible optoelectronic devices. MDHJs are highly sensitive to (i) interfacial chemistry because of large surface area-to-volume ratios and (ii) electric fields, which are incompletely screened because of the ultrathin nature of MDHJs. This sensitivity presents opportunities for control of physical phenomena in MDHJs through chemical modification, optical excitation, externally applied electric fields, and other environmental parameters. Since this fast-moving research area is beginning to pose and answer fundamental questions that underlie the fundamental optoelectronic behavior of MDHJs, it is an opportune time to assess progress and suggest future directions in this field.In this Account, we first outline the characteristic properties, advantages, and challenges for low-dimensional materials, many of which arise as a result of quantum confinement effects. The optoelectronic properties and performance of MDHJs are primarily determined by dynamics of excitons and charge carriers at their interfaces, where these particles tunnel, trap, scatter, and/or recombine on the time scales of tens of femtoseconds to hundreds of nanoseconds. We discuss several photophysical phenomena that deviate from those observed in bulk heterojunctions, as well as factors that can be used to vary, probe, and ultimately control the behavior of excitons and charge carriers in MDHJ systems. We then discuss optoelectronic applications of MDHJs, namely, photodetectors, photovoltaics, and photocatalysts, and identify current performance limits compared to state-of-the-art benchmarks. Finally, we suggest strategies to extend the current understanding of dynamics in MDHJs toward the realization of stimuli-driven responses, particularly with respect to exciton delocalization, quantum emission, interfacial morphology, responsivity to external stimuli, spin selectivity, and usage of chemically reactive materials.

Dynamic Modification of Fermi Energy in Single-Layer Graphene by Photoinduced Electron Transfer from Carbon Dots

Graphene (Gr)—a single layer of two-dimensional sp² carbon atoms—and Carbon Dots (CDs)—a novel class of carbon nanoparticles—are two outstanding nanomaterials, renowned for their peculiar properties: Gr for its excellent charge-transport, and CDs for their impressive emission properties. Such features, coupled with a strong sensitivity to the environment, originate the interest in bringing together these two nanomaterials in order to combine their complementary properties. In this work, the investigation of a solid-phase composite of CDs deposited on Gr is reported. The CD emission efficiency is reduced by the contact of Gr. At the same time, the Raman analysis of Gr demonstrates the increase of Fermi energy when it is in contact with CDs under certain conditions. The interaction between CDs and Gr is modeled in terms of an electron-transfer from photoexcited CDs to Gr, wherein an electron is first transferred from the carbon core to the surface states of CDs, and from there to Gr. There, the accumulated electrons determine a dynamical n-doping effect modulated by photoexcitation. The CD–graphene interaction unveiled herein is a step forward in the understanding of the mutual influence between carbon-based nanomaterials, with potential prospects in light conversion applications.

Preparation and Characterization of Freely-Suspended Graphene Nanomechanical Membrane Devices with Quantum Dots for Point-of-Care Applications

We demonstrate freely suspended graphene-based nanomechanical membranes (NMMs) as acoustic sensors in the audible frequency range. Simple and low-cost procedures are used to fabricate NMMs with various thicknesses based on graphene layers grown by graphite exfoliation and solution processed graphene oxide. In addition, NMMs are grafted with quantum dots (QDs) for characterizing mass sensitive vibrational properties. Thickness, roughness, deformation, deflection and emissions of NMMs with attached QDs are experimented and analyzed by utilizing atomic force microscopy, Raman spectroscopy, laser induced deflection analyzer and spectrophotometers. Förster resonance energy transfer (FRET) is experimentally achieved between the QDs attached on NMMs and nearby glass surfaces for illustrating acousto-optic utilization in future experimental implementations combining vibrational properties of NMMs with optical emission properties of QDs. This property denoted as vibrating FRET (VFRET) is previously introduced in theoretical studies while important experimental steps are for the first time achieved in this study for future VFRET implementations. The proposed modeling and experimental methodology are promising for future novel applications such as NMM based biosensing, photonics and VFRET based point-of-care (PoC) devices.

Ultra-thin van der Waals crystals as semiconductor quantum wells

Control over the quantization of electrons in quantum wells is at the heart of the functioning of modern advanced electronics; high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. However, this avenue has not been explored in the case of 2D materials. Here we apply this concept to van der Waals heterostructures using the thickness of exfoliated crystals to control the quantum well dimensions in few-layer semiconductor InSe. This approach realizes precise control over the energy of the subbands and their uniformity guarantees extremely high quality electronic transport in these systems. Using tunnelling and light emitting devices, we reveal the full subband structure by studying resonance features in the tunnelling current, photoabsorption and light emission spectra. In the future, these systems could enable development of elementary blocks for atomically thin infrared and THz light sources based on intersubband optical transitions in few-layer van der Waals materials.

Quantum Confinement-Tunable Ultrafast Charge Transfer in a PbS Quantum Dots/WSe2 0D-2D Hybrid Structure: Transition from the Weak to Strong Coupling Regime

0D-2D mixed-dimensional hybrid structures, which combine tunable optical properties of 0D quantum dots (QDs) and high transport mobilities of 2D layered materials, have shown great potential in optoelectronic applications. Understanding charge transfer dynamics at the 0D-2D interface is essential but still lacking. Here, using PbS QD/WSe₂ system, by simply controlling PbS QD size, we show a tunable hole transfer (HT) rate by more than 4 orders of magnitude (from ∼1 ns to <100 fs) and, interestingly, transition from the weak to strong coupling regime due to quantum confinement effect. In contrast to reported layer-dependent energy transfer dynamics, we observe a robust HT rate against WSe₂ layer number, which can be ascribed to a subtle change of WSe₂ valence band structure with layer number. Our results are important to not only fundamental understanding of charge transfer behavior at nanoscale low-dimensional interface but also help design next-generation mixed-dimensional optoelectronic devices.

Mutual Energy Transfer in a Binary Colloidal Quantum Well Complex

Förster resonance energy transfer (FRET) is a fundamental process that is key to optical biosensing, photosynthetic light harvesting, and down-converted light emission. However, in total, conventional FRET in a donor-acceptor pair is essentially unidirectional, which impedes practical application of FRET-based technologies. Here, we propose a mutual FRET scheme that is uniquely bidirectional in a binary colloidal quantum well (CQW) complex enabled by utilizing the d orbital electrons in a dopant-host CQW system. Steady-state emission intensity, time-resolved, and photoluminescence excitation spectroscopies have demonstrated that two distinct CQWs play the role of donor and acceptor simultaneously in this complex consisting of 3 monolayer (ML) copper-doped CQWs and 4 ML undoped CQWs. Band-edge excitons in 3 ML CQWs effectively transfer the excitation to excitons in 4 ML CQWs, whose energy is also harvested backward by the dopants in 3 ML CQWs. This binary CQW complex, which offers a unique mutual energy-transfer mechanism, may unlock revolutionary FRET-based technologies.

PbSe Quantum Dots Sensitized High-Mobility Bi2O2Se Nanosheets for High-Performance and Broadband Photodetection Beyond 2 μm

As an emerging two-dimensional semiconductor, Bi₂O₂Se has recently attracted broad interests in optoelectronic devices for its superior mobility and ambient stability, whereas the diminished photoresponse near its inherent indirect bandgap (0.8 eV or λ = 1550 nm) severely restricted its application in the broad infrared spectra. Here, we report the Bi₂O₂Se nanosheets based hybrid photodetector for short wavelength infrared detection up to 2 μm via PbSe colloidal quantum dots (CQDs) sensitization. The type II interfacial band offset between PbSe and Bi₂O₂Se not only enhanced the device responsivity compared to bare Bi₂O₂Se but also sped up the response time to ∼4 ms, which was ∼300 times faster than PbSe CQDs. It was further demonstrated that the photocurrent in such a zero-dimensional-two-dimensional hybrid photodetector could be efficiently tailored from a photoconductive to photogate dominated response under external field effects, thereby rendering a sensitive infrared response >10³ A/W at 2 μm. The excellent performance up to 2 μm highlights the potential of field-effect modulated Bi₂O₂Se-based hybrid photodetectors in pursuing highly sensitive and broadband photodetection.

Ultrafast exciton transfer in perovskite CsPbBr3 quantum dots and topological insulator Bi2Se3 film heterostructure

Recently, topological insulator based heterostructures (HSs) have attracted tremendous research interest, due to their efficient carrier transfer features at the heterointerface induced by metallic surface states. Here, a novel HS comprising 0D perovskite CsPbBr₃ quantum dots (QDs) and 2D material topological insulator Bi₂Se₃ film is proposed and experimentally investigated. Specifically, steady state and time-resolved photoluminescence (PL) measurements are employed, from which a significant quenching behaviour is observed in the HS, with an average quenching factor of 93.2 ± 0.8%. Additionally, time-resolved PL spectroscopy affirms that the carrier transfer efficiency can be up to 92.6 ± 0.2%. Furthermore, the dynamics of carrier transfer within the 0D-2D HS are characterized by utilizing femtosecond broadband transient absorption (TA) spectroscopy, revealing an ultrafast exciton transfer from photoexcited CsPbBr₃ QDs to the Bi₂Se₃ film with a time-scale around 1.1 ± 0.2 ps. An alternative important finding is that the band renormalization is exhibited in CsPbBr₃ QDs of the HS, with the dominant factor being the Coulomb screening effect. This work is expected to provide some fundamental understanding of the ultrafast and efficient carrier transfer mechanism underneath HSs based on topological insulators.