Gate Dielectric Chemical Structure−Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors

Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory

Inkjet printing is of great interest in the preparation of optoelectronic and microelectronic devices due to its low cost, low process temperature, versatile material compatibility, and ability to precisely manufacture multi-layer devices on demand. However, interlayer solvent erosion is a typical problem that limits the printing of organic semiconductor devices with multi-layer structures. In this study, we proposed a solution to address this erosion problem by designing polystyrene-block-poly(4-vinyl pyridine)-grafted Au nanoparticles (Au@PS-b-P4VP NPs). With a colloidal ink containing the Au@PS-b-P4VP NPs, we obtained a uniform monolayer of Au nano-crystal floating gates (NCFGs) embedded in the PS-b-P4VP tunneling dielectric (TD) layer using direct-ink-writing (DIW). Significantly, PS-b-P4VP has high erosion resistance against the semiconductor ink solvent, which enables multi-layer printing. An active layer of semiconductor crystals with high crystallinity and well-orientation was obtained by DIW. Moreover, we developed a strategy to improve the quality of the TD/semiconductor interface by introducing a polystyrene intermediate layer. We show that the NCFG memory devices exhibit a low threshold voltage (<3 V), large memory window (66 V), stable endurance (>100 cycles), and long-term retention (>10 years). This study provides universal guidance for printing functional coatings and multi-layer devices.

Self-Assembled Monolayers for Interfacial Engineering in Solution-Processed Thin-Film Electronic Devices: Design, Fabrication, and Applications

Interfacial engineering has long been a vital means of improving thin-film device performance, especially for organic electronics, perovskites, and hybrid devices. It greatly facilitates the fabrication and performance of solution-processed thin-film devices, including organic field effect transistors (OFETs), organic solar cells (OSCs), perovskite solar cells (PVSCs), and organic light-emitting diodes (OLEDs). However, due to the limitation of traditional interfacial materials, further progress of these thin-film devices is hampered particularly in terms of stability, flexibility, and sensitivity. The deadlock has gradually been broken through the development of self-assembled monolayers (SAMs), which possess distinct benefits in transparency, diversity, stability, sensitivity, selectivity, and surface passivation ability. In this review, we first showed the evolution of SAMs, elucidating their working mechanisms and structure-property relationships by assessing a wide range of SAM materials reported to date. A comprehensive comparison of various SAM growth, fabrication, and characterization methods was presented to help readers interested in applying SAM to their works. Moreover, the recent progress of the SAM design and applications in mainstream thin-film electronic devices, including OFETs, OSCs, PVSCs and OLEDs, was summarized. Finally, an outlook and prospects section summarizes the major challenges for the further development of SAMs used in thin-film devices.

Density Functional Theory-Based Approach For Dielectric Constant Estimation of Soluble Polyimide Insulators

Evaluation of the insulating properties of polymers, such as the dielectric constant and dissipation factor, is crucial in electronic devices, including field-effect transistors and wireless communication applications. This study applies density functional theory (DFT) to predict the dielectric constant of soluble polyimides (SPIs). Various SPIs containing trifluoromethyl groups in the backbone with different pendant types, numbers, and symmetries are successfully synthesized, and their dielectric constants are evaluated and compared with the DFT-estimated values. Two types of DFT-optimized SPIs, single-chain and stacked-chain models, are used to describe the local geometries of the SPIs. In addition, to reveal the relationship between the molecular structure and dielectric constant, further investigations are conducted by considering the dielectric constant of composing ionic and electronic components. The DFT-estimated static dielectric constant of the single-chain model accurately reproduces the corresponding experimental value with at least 80% accuracy. Our approach provides a rational and accelerated strategy to evaluate polymer insulators for electronic devices based on cost-effective DFT calculations.

Solution-Processed Polymer Dielectric Interlayer for Low-Voltage, Unipolar n-Type Organic Field-Effect Transistors

The integration of organic electronic circuits into real-life applications compels the fulfillment of a range of requirements, among which the ideal operation at a low voltage with reduced power consumption is paramount. Moreover, these performance factors should be achieved via solution-based fabrication schemes in order to comply with the promise of cost- and energy-efficient manufacturing offered by an organic, printed electronic technology. Here, we propose a solution-based route for the fabrication of low-voltage organic transistors, encompassing ideal device operation at voltages below 5 V and exhibiting n-type unipolarization. This process is widely applicable to a variety of semiconducting and dielectric materials. We achieved this through the use of a photo-cross-linked, low-k dielectric interlayer, which is used to fabricate multilayer dielectric stacks with areal capacitances of up to 40 nF/cm2 and leakage currents below 1 nA/cm2. Because of the chosen azide-based cross-linker, the dielectric promotes n-type unipolarization of the transistors and demonstrated to be compatible with different classes of semiconductors, from conjugated polymers to carbon nanotubes and low-temperature metal oxides. Our results demonstrate a general applicability of our unipolarizing dielectric, facilitating the implementation of complementary circuitry of emerging technologies with reduced power consumption.

Solution-Processable Indenofluorenes on Polymer Brush Interlayer: Remarkable N-Channel Field-Effect Transistor Characteristics under Ambient Conditions

The development of solution-processable n-type molecular semiconductors that exhibit high electron mobility (μe ≥ 0.5 cm2/(V·s)) under ambient conditions, along with high current modulation (Ion/Ioff ≥ 106-107) and near-zero turn on voltage (Von) characteristics, has lagged behind that of other semiconductors in organic field-effect transistors (OFETs). Here, we report the design, synthesis, physicochemical and optoelectronic characterizations, and OFET performances of a library of solution-processable, low-LUMO (-4.20 eV) 2,2'-(2,8-bis(3-alkylthiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile small molecules, β,β'-Cn-TIFDMTs, having varied alkyl chain lengths (n = 8, 12, 16). An intriguing correlation is identified between the solid-isotropic liquid transition enthalpies and the solubilities, indicating that cohesive energetics, which are tuned by alkyl chains, play a pivotal role in determining solubility. The semiconductors were spin-coated under ambient conditions on densely packed (grafting densities of 0.19-0.45 chains/nm2) ultrathin (∼3.6-6.6 nm) polystyrene-brush surfaces. It is demonstrated that, on this polymer interlayer, thermally induced dispersive interactions occurring over a large number of methylene units between flexible alkyl chains (i.e., zipper effect) are critical to achieve a favorable thin-film crystallization with a proper microstructure and morphology for efficient charge transport. While C8 and C16 chains show a minimal zipper effect upon thermal annealing, C12 chains undergo an extended interdigitation involving ∼6 methylene units. This results in the formation of large crystallites having lamellar stacking ((100) coherence length ∼30 nm) in the out-of-plane direction and highly favorable in-plane π-interactions in a slipped-stacked arrangement. Uninterrupted microstructural integrity (i.e., no face-on (010)-oriented crystallites) was found to be critical to achieving high mobilities. The excellent crystallinity of the C12-substituted semiconductor thin film was also evident in the observed crystal lattice vibrations (phonons) at 58 cm-1 in low-frequency Raman scattering. Two-dimensional micrometer-sized (∼1-3 μm), sharp-edged plate-like grains lying parallel with the substrate plane were observed. OFETs fabricated by the current small molecules showed excellent n-channel behavior in ambient with μe values reaching ∼0.9 cm2/(V·s), Ion/Ioff ∼ 107-108, and Von ≈ 0 V. Our study not only demonstrates one of the highest performing n-channel OFET devices reported under ambient conditions via solution processing but also elucidates significant relationships among chemical structures, molecular properties, self-assembly from solution into a thin film, and semiconducting thin-film properties. The design rationales presented herein may open up new avenues for the development of high-electron-mobility novel electron-deficient indenofluorene and short-axis substituted donor-acceptor π-architectures via alkyl chain engineering and interface engineering.

Optimization of Gas-Sensing Properties in Poly(triarylamine) Field-Effect Transistors by Device and Interface Engineering

In this study, we investigated the gas-sensing mechanism in bottom-gate organic field-effect transistors (OFETs) using poly(triarylamine) (PTAA). A comparison of different device architectures revealed that the top-contact structure exhibited superior gas-sensing performance in terms of field-effect mobility and sensitivity. The thickness of the active layer played a critical role in enhancing these parameters in the top-contact structure. Moreover, the distance and pathway for charge carriers to reach the active channel were found to significantly influence the gas response. Additionally, the surface treatment of the SiO2 dielectric with hydrophobic self-assembled mono-layers led to further improvement in the performance of the OFETs and gas sensors by effectively passivating the silanol groups. Under optimal conditions, our PTAA-based gas sensors achieved an exceptionally high response (>200%/ppm) towards NO2. These findings highlight the importance of device and interface engineering for optimizing gas-sensing properties in amorphous polymer semiconductors, offering valuable insights for the design of advanced gas sensors.

Amorphous Fluorinated Acrylate Polymer Dielectrics for Flexible Transistors and Logic Gates with High Operational Stability

Fluorinated amorphous polymeric gate-insulating materials for organic thin-film transistors (OTFTs) not only form hydrophobic surfaces but also significantly reduce traps at the interface between the organic semiconductor and gate insulator. Therefore, these polymeric materials can enhance the OTFT's operation stability. In this study, we synthesized a new polymeric insulating material series composed of acrylate and fluorinated functional groups (with different ratios) named MBHCa-F and used them as gate insulators for OTFTs and in other applications. The insulating features of the MBHCa-F polymers, including surface energy, surface atomic content properties, dielectric constant, and leakage current, were clearly analyzed with respect to the content of the fluorinated functional groups. At higher fluorine-based functional group content, the polymeric series exhibited higher fluorine-based contents at the surface and superior electrical properties, such as field-effect mobility and driving stability, at OTFTs. Therefore, we believe that this study provides a substantial method for synthesizing polymeric insulating materials to enhance the operational stability and electrical performance of OTFTs.

High-Performance Organic Laser Semiconductor Enabling Efficient Light-Emitting Transistors and Low-Threshold Microcavity Lasers

An organic light-emitting transistor (OLET) is a candidate device architecture for developing electrically pumped organic solid-state lasers, but it remains a critical challenge because of the lack of organic semiconductors that simultaneously possess a high solid-state emission efficiency (Φ_s), a high and balanced ambipolar mobility (μ_h,e), and a large stimulated emission cross-section. Here, we designed a molecule of 4,4'-bis(2-dibenzothiophenyl-vinyl)-biphenyl (DBTVB) and prepared its ultrathin single-crystal microplates with herringbone packing arrangements, which achieve balanced mobilities of μ_h = 3.55 ± 0.5 and μ_e = 2.37 ± 0.5 cm² V^-1 s^-1, a high Φ_s of 85 ± 3%, and striking low-threshold laser characteristics. Theoretical and experimental investigations reveal that a strong electronic coupling and a small reorganization energy ensure efficient charge transport; meanwhile, the exciton-vibration effect and negligible π-π orbital overlap give rise to highly emissive H-aggregates and facilitate laser emission. Furthermore, OLET-based DBTVB crystals offer an internal quantum efficiency approaching 100% and a record-high electroluminescence external quantum efficiency of 4.03%.

Integrating Unexpected High Charge-Carrier Mobility and Low-Threshold Lasing Action in an Organic Semiconductor

Integrating high charge-carrier mobility and low-threshold lasing action in an organic semiconductor is crucial for the realization of an electrically pumped laser, but remains a great challenge. Herein, we present an organic semiconductor, named as 2,7-di(2-naphthyl)-9H-fluorene (LD-2), which shows an unexpected high charge-carrier mobility of 2.7 cm²  V^-1  s^-1 and low-threshold lasing characteristic of 9.43 μJ cm^-2 and 9.93 μJ cm^-2 and high-quality factor (Q) of 2131 and 1684 at emission peaks of 420 and 443 nm, respectively. Detailed theoretical calculations and photophysical data analysis demonstrate that a large intermolecular transfer integral of 10.36-45.16 meV together with a fast radiative transition rate of 8.0×10⁸  s^-1 are responsible for the achievement of the superior integrated optoelectronic properties in the LD-2 crystal. These optoelectronic performances of LD-2 are among the highest reported low-threshold lasing organic semiconductors with efficient charge transport, suggesting its promise for research of electrically pumped organic lasers (EPOLs).

Small-molecule ambipolar transistors

Ambipolar transistor properties have been observed in various small-molecule materials. Since a small energy gap is necessary, many types of molecular designs including extended π-skeletons as well as the incorporation of donor and acceptor units have been attempted. In addition to the energy levels, an inert passivation layer is important to observe ambipolar transistor properties. Ambipolar transport has been observed in extraordinary π-electron systems such as antiaromatic compounds, biradicals, radicals, metal complexes, and hydrogen-bonded materials. Several donor/acceptor cocrystals show ambipolar transport as well.

Polymer Electrolyte Dielectrics Enable Efficient Exciton-Polaron Quenching in Organic Semiconductors for Photostable Organic Transistors

The photoelectric response of organic field-effect transistors (OFETs) will cause severe photoelectric interference, which hinders the applications of OFETs in the light environment. It is highly challenging to relieve this problem because of the high photosensitivity of most organic semiconductors. Here, we propose an efficient "exciton-polaron quenching" strategy to suppress the photoelectric response and thus construct highly photostable OFETs by utilizing a polymer electrolyte dielectric─poly(acrylic acid) (PAA). This dielectric produces high-density polarons in organic semiconductors under a gate electric field that quench the photogenerated excitons with high efficiency (∼70%). As a result, the OFETs with PAA dielectric exhibit unprecedented photostability against strong light irradiation up to 214 mW/cm², which far surpasses the reported values and solar irradiance value (∼138 mW/cm²). The strategy shows high universality in OFETs with different OSCs and electrolytes. As a demonstration, the photostable OFET can stably drive an organic light-emitting diode (OLED) under light irradiation. This work presents an efficient exciton modulation strategy in OSC and proves a high potential in practical applications.

Maximized Hole Trapping in a Polystyrene Transistor Dielectric from a Highly Branched Iminobis(aminoarene) Side Chain

We synthesized highly branched and electron-donating side chain subunits and attached them to polystyrene (PS) used as a dielectric layer in a pentacene field-effect transistor. The influence of these groups on dielectric function, charge retention, and threshold voltage shifts (ΔV_th) depending on their positions in dielectric multilayers was determined. We compared the observations made on an N-perphenylated iminobisaniline side chain with those from the same side chains modified with ZnO nanoparticles and with an adduct formed from tetracyanoethylene (TCNE). We also synthesized an analogue in which six methoxy groups are present instead of two amine nitrogens. At 6 mol % side chain, hopping transport was sufficient to cause shorting of the gate, while at 2 mol %, charge trapping was observable as transistor threshold voltage shifts (ΔV_th). We created three types of devices: with the substituted PS layer as single-layer dielectric, on top of a cross-linked PS layer but in contact with the pentacene (bilayers), and sandwiched between two PS layers in trilayers. Especially large bias stress effects and ΔV_th, larger than those in the case of the hexamethoxy and previously studied dimethoxy analogues, were observed in the second case, and the effects increased with the increasing electron-donating properties of the modified side chains. The highest ΔV_th was consistent with a majority of the side chains stabilizing the trapped charge. Trilayer devices showed decreased charge storage capability compared to previous work in which we used less donating side chains but in higher concentrations. The ZnO and TCNE modifications resulted in slightly more and less negative ΔV_th, respectively, when the side chain polystyrene was not in contact with the pentacene and isolated from the gate electrode. The results indicate a likely maximum combination of molecular charge stabilizing activity and side chain concentration that still allows gate dielectric function.

Property Modulation of Two-Dimensional Lead-Free Perovskite Thin Films by Aromatic Polymer Additives for Performance Enhancement of Field-Effect Transistors

The inevitable oxidation of Sn²⁺ and p-type self-doping has plagued the development of two-dimensional (2D) Sn-based perovskite field effect transistors. In this work, we demonstrate the modulation of the properties of phenethylammonium tin iodide ((PEA)₂SnI₄) perovskite thin films by introducing the aromatic polymer additives of poly(4-vinylphenol) (PVP) and poly(vinyl pyrrolidone) (PVPD) during the crystallization processes, keeping the 2D layered structure of (PEA)₂SnI₄ unchanged. The proposed formation mechanisms of the polymer-assisted (PEA)₂SnI₄:PVP and (PEA)₂SnI₄:PVPD films disclose that the interactions between the polymers and (PEA)₂SnI₄, such as hydrogen bonds, π-π interactions, and coordination bonds, lead to the improvement of the morphology and crystallization as well as the inhibition of Sn²⁺ oxidation of the films. However, the field-effect transistors based on the two polymer-assisted (PEA)₂SnI₄ thin films constructed on the dielectric of poly(vinyl alcohol) (PVA) modified by crosslinking PVP (CL-PVP) exhibit quite a different performance. Compared with the (PEA)₂SnI₄ transistor, without sacrificing the hole mobility, the on-off current ratio of the (PEA)₂SnI₄:PVP device increases by one order of magnitude, and the subthreshold slope declines slightly due to the reduced leakage current, which results from the reduction of p-type self-doping of the perovskite film and the improved quality of the perovskite/dielectric interface because of the strong π-π interactions between the benzene rings in CL-PVP and (PEA)₂SnI₄:PVP. In contrast, the (PEA)₂SnI₄:PVPD transistor exhibits relatively poor overall performance because of the N-vinylpyrrolidone of PVPD. More importantly, employing PVP and PVPD as additives can effectively enhance the chemical stability of (PEA)₂SnI₄ as well as the operational stabilities of the corresponding transistors. Our work provides an effective strategy for selecting chemical additives to improve 2D perovskite properties and suppress the oxidation of Sn-based perovskites, and paves a way toward the future applications of Sn-based perovskite optoelectronic devices with high performance and stability.

Hysteresis-Free, High-Performance Polymer-Dielectric Organic Field-Effect Transistors Enabled by Supercritical Fluid

Organic field-effect transistors (OFETs) are of the core units in organic electronic circuits, and the performance of OFETs replies critically on the properties of their dielectric layers. Owing to the intrinsic flexibility and natural compatibility with other organic components, organic polymers, such as poly(vinyl alcohol) (PVA), have emerged as highly interesting dielectric materials for OFETs. However, unsatisfactory issues, such as hysteresis, high subthreshold swing, and low effective carrier mobility, still considerably limit the practical applications of the polymer-dielectric OFETs for high-speed, low-voltage flexible organic circuits. This work develops a new approach of using supercritical CO₂ fluid (SCCO₂) treatment on PVA dielectrics to achieve remarkably high-performance polymer-dielectric OFETs. The SCCO₂ treatment is able to completely eliminate the hysteresis in the transfer characteristics of OFETs, and it can also significantly reduce the device subthreshold slope to 0.25 V/dec and enhance the saturation regime carrier mobility to 30.2 cm² V⁻¹ s⁻¹, of which both the numbers are remarkable for flexible polymer-dielectric OFETs. It is further demonstrated that, coupling with an organic light-emitting diode (OLED), the SCCO₂-treated OFET is able to function very well under fast switching speed, which indicates that an excellent switching behavior of polymer-dielectric OFETs can be enabled by this SCCO₂ approach. Considering the broad and essential applications of OFETs, we envision that this SCCO₂ technology will have a very broad spectrum of applications for organic electronics, especially for high refresh rate and low-voltage flexible display devices.

Facile Photo-cross-linking System for Polymeric Gate Dielectric Materials toward Solution-Processed Organic Field-Effect Transistors: Role of a Cross-linker in Various Polymer Types

Energy-efficient solution-processed organic field-effect transistors (OFETs) are highly sought after in the low-cost printing industry as well as for the manufacture of flexible and other next-generation devices. The fabrication of such electronic devices requires high-functioning insulating materials that are chemically and mechanically robust to avoid lowering insulating properties during the device fabrication process or utilization of devices. In this study, we report a facile, fluorinated, UV-assisted cross-linker series using a fluorophenyl azide (FPA), which reacts with the C-H groups of a conventional polymer. This demonstrates the application of the cross-linked films in OFET gate dielectrics. The effects of the cross-linkable chemical structure of the FPA series on the cross-linking chemistry, photopatternability, and dielectric properties of the resulting films are investigated for low/high-k or amorphous/crystalline polymeric gate dielectric materials. The characteristics of insulating layers and behavior of OFETs containing these cross-linked gate dielectrics (for example, leakage current density (J), hysteresis, and charge trap density) depend on the polymer type. Furthermore, an organic-based complementary inverter and various printable OFETs with excellent electrical characteristics are successfully fabricated. Thus, these reported cross-linkers that enable the solution process and patterning of well-developed conventional polymer dielectric materials are promising for the realization of a more sustainable next-generation industrial technology for flexible and printable devices.

Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today's microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.

Three-Dimensional Multistack-Printed, Self-Powered Flexible Pressure Sensor Arrays: Piezoelectric Composites with Chemically Anchored Heterogeneous Interfaces

Recently, the development of pressure sensor devices composed of mechanically flexible materials has gained a tremendous attention for emerging wearable electronics applications. Compared with various sensing materials, piezoelectric composite materials provide a characteristic advantage of enabling energy unit-free integration of sensor compartments. In this study, we develop a new chemical method of synthesizing highly functioning piezoelectric composite materials with electrostatically reinforced heterogeneous interfaces to improve the voltage output signal in all-printed sensor arrays. The surfaces of piezoelectric oxide nanoparticles are decorated subsequently with a cationic polyelectrolyte, polyethyleneimine, and a tri-block copolymer, styrene-ethylene/butylene-styrene grafted with maleic anhydride. To elucidate the factors determining the performance of pressure sensor devices, both the electrical properties and piezoelectric characteristics are investigated comprehensively for various compositional composite materials prepared from chemical and physical rubbers. The resulting device exhibits a sensitivity of 0.28 V·kPa^-1 with a linear increment of output voltage in a pressure range up to 30 kPa. It is also demonstrated that the all-printed sensor array is fabricated successfully by a multistack-printing process of conductive, insulating, and piezoelectric composite materials in an additive manufacturing fashion.

Molecular engineering of organic semiconductors enables noble metal-comparable SERS enhancement and sensitivity

Nanostructured molecular semiconductor films are promising Surface-Enhanced Raman Spectroscopy (SERS) platforms for both fundamental and technological research. Here, we report that a nanostructured film of the small molecule DFP-4T, consisting of a fully π-conjugated diperfluorophenyl-substituted quaterthiophene structure, demonstrates a very large Raman enhancement factor (>105) and a low limit of detection (10-9 M) for the methylene blue probe molecule. This data is comparable to those reported for the best inorganic semiconductor- and even intrinsic plasmonic metal-based SERS platforms. Photoluminescence spectroscopy and computational analysis suggest that both charge-transfer energy and effective molecular interactions, leading to a small but non-zero oscillator strength in the charge-transfer state between the organic semiconductor film and the analyte molecule, are required to achieve large SERS enhancement factors and high molecular sensitivities in these systems. Our results provide not only a considerable experimental advancement in organic SERS figure-of-merits but also a guidance for the molecular design of more sensitive SERS systems.

Ionic liquid thin layer-induced memory effects in organic field-effect transistors

We examined the morphologies and structures of pentacene and C60 thin films grown on thin layers of an ionic liquid, N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI), and found that the characteristics of the films depended significantly on the thickness of DEME-TFSI. In addition, we fabricated organic field-effect transistors (OFETs) of pentacene and C60 in which a thin layer of DEME-TFSI was inserted between the organic semiconductor (pentacene or C60) and the gate insulating layer, and measured their performance in situ. We found that 1.5-2 ML (ML: monolayer) DEME-TFSI produced a large hysteresis loop in the transfer characteristics in these OFETs, but 5 ML DEME-TFSI resulted in the formation of normally-on states with far smaller memory effects. The curvatures of the hysteresis loops were caused by the formation of trap states induced by the DEME-TFSI layers. This novel technique provides a simple tool for creating hysteresis behavior and could potentially be applied to transistor memory devices.

Perovskite and Conjugated Polymer Wrapped Semiconducting Carbon Nanotube Hybrid Films for High-Performance Transistors and Phototransistors

Although organic-inorganic halide perovskites continue to generate considerable interest due to great potentials for various optoelectronic devices, there are some critical obstacles to practical applications, including lead toxicity, relatively low field-effect mobility, and strong hysteresis during operation. This paper proposes a universal approach to significantly improve mobility and operational stability with reduced dual-sweep hysteresis for perovskite-based thin film transistors (TFTs) by coupling low-dimensional lead-free perovskite material (C₆H₅C₂H₄NH₃)₂SnI₄ (hereafter abbreviated as (PEA)₂SnI₄) with embedded conjugated polymer wrapped semiconducting carbon nanotubes (semi-CNTs). In (PEA)₂SnI₄/semi-CNT hybrid TFTs, semi-CNTs can provide highway-like transport paths, enabling smoother carrier transport with less trapping and scattering. We also demonstrate the performance of (PEA)₂SnI₄/semi-CNT hybrid phototransistors with ultrahigh photoresponsivity ( R) of 6.3 × 10⁴ A/W and detectivity ( D*) of 1.12 × 10¹⁷ Jones, which is about 2 or 3 orders of magnitude higher than that of the best devices available to date. The results indicate promising potentials for solution-processed perovskite/semi-CNT hybrid platforms, and the developed strategy can be applied for high-performance perovskite nanomaterial optoelectronics.

Engineering Asymmetric Charge Injection/Extraction to Optimize Organic Transistor Performances

The introduction of an appropriate functionality on the electrode/active layer interface has been found to be an efficient methodology to enhance the electrical performances of organic field-effect transistors (OFETs). Herein, we efficiently optimized the charge injection/extraction characteristics of source/drain (S/D) electrodes by applying an asymmetric functionalization at each individual electrode/organic semiconductor (OSC) interface. To further clarify the functionalizing effects of the electrode/OSC interface, we systematically designed five different OFETs: one with pristine S/D electrodes (denoted as pristine S/D) and the remaining ones made by symmetrically or asymmetrically functionalizing the S/D electrodes with up to two different self-assembled monolayers (SAMs) based on thiolated molecules, the strongly electron-donating thiophenol (TP) and electron-withdrawing 2,3,4,5-pentafluorobenzenethiol (PFBT). Both the S and D electrodes were functionalized with TP (denoted as TP-S/D) in one of the two symmetric cases and with PFBT in the other (PFBT-S/D). In each of the two asymmetric cases, one of the S/D electrodes was functionalized with TP and the other with PFBT (to produce PFBT-S/TP-D and TP-S/PFBT-D OFETs). The vapor-deposited p-type dinaphtho[2,3- b:2',3'- f]thieno[3,2- b]thiophene was used as the OSC active layer. The PFBT-S/TP-D case exhibited a field-effect mobility (μ_FET) of 0.86 ± 0.23 cm² V^-1 s^-1, about three times better than that of the pristine S/D case (0.31 ± 0.12 cm² V^-1 s^-1). On the other hand, the μ_FET of the TP-S/PFBT-D case (0.18 ± 0.10 cm² V^-1 s^-1) was significantly lower than that of the pristine case and even lower than those of the TP-S/D (0.23 ± 0.07 cm² V^-1 s^-1) and PFBT-S/D (0.58 ± 0.19 cm² V^-1 s^-1) cases. These results were clearly correlated with the additional hole density, surface potential, and effective work function. In addition, the contact resistance ( R_C) for the asymmetric PFBT-S/TP-D case was 10-fold less than that for the TP-S/PFBT-D case and more than five times lower than that for the pristine case. The results contribute a meaningful step forward in improving the electrical performances of various organic electronics such as OFETs, inverters, solar cells, and sensors.

Study on Correlation between Structural and Electronic Properties of Fluorinated Oligothiophenes Transistors by Controlling Film Thickness

α,ω-diperfluorohexylquaterthiophene (DFH-4T) has been an attractive n-type material employed in the development of high-mobility organic field-effect transistors. This paper presents a systematic study of the relationship between DFH-4T transistor performance and film structure properties as controlled by deposited thickness. When the DFH-4T thickness increases from 8 nm to 80 nm, the room-temperature field-effect mobility increases monotonically from 0.01 to 1 cm2·V−1·s−1, while the threshold voltage shows a different trend of first decrease then increase. The morphology of thin films revealed by atomic force microscopy shows a dramatic change from multilayered terrace to stacked rod like structures as the film thickness is increased. Yet the crystallite structure and the orientation of molecular constituent, as determined by X-ray diffraction and near-edge X-ray absorption fine structure respectively, do not differ much with respect to film thickness increase. Further analyses of low-temperature transport measurements with mobility-edge model demonstrate that the electronic states of DFH-4T transistors are mainly determined by the film continuity and crystallinity of the bottom multilayered terrace. Moreover, the capacitance-voltage measurements of DFH-4T metal-insulator-semiconductor diodes demonstrate a morphological dependence of charge injection from top contacts, which well explains the variation of threshold voltage with thickness. The overall study provides a deeper understanding of microstructural and molecular growth of DFH-4T film and clarify the structural effects on charge transport and injection for implementation of high-mobility top-contact transistors.

Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects

Understanding the physics behind the operational mechanism of Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) is of paramount importance for the correct interpretation of the device response. Here, we report the systematic functionalization of the gate electrode of an EGOFET with self-assembled monolayers with a variety of dipolar moments showing that both the chemical nature and the monolayer density influence the electrical characteristics of the device.

The functionalisation of the gate electrode in electrolyte-gated field effect transistors (EGOFETs) with self-assembled monolayers effect the device electrical performance mainly due to the induced capacitance changes.

A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors

Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In₂O₃ thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.

Self-Assembled Photochromic Molecular Dipoles for High-Performance Polymer Thin-Film Transistors

The development of high-performance multifunctional polymer-based electronic circuits is a major step toward future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azobenzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized in polymer thin-film transistors (TFTs) to realize high-performance electronics with a p-type field-effect mobility (μ_FET) exceeding 2 cm² V^-1 s^-1. A crossover in the transport mechanism from electrostatic dipolar disorder to ionic-induced disorder is observed in the transistor characteristics over a range of temperatures. The facile supramolecular design allows the possibility to optically control the extent of molecular and ionic polarization in the ultrathin nanodielectric. Thus, we demonstrate a 3-fold increase in the capacitance from 0.1 to 0.34 μF/cm², which results in a 200% increase in TFT channel current.

Copolymer dielectrics with balanced chain-packing density and surface polarity for high-performance flexible organic electronics

The ever-increasing demand for flexible electronics calls for the development of low-voltage and high-mobility organic thin-film transistors (OTFTs) that can be integrated into emerging display and labeling technologies. Polymer dielectrics with comprehensive and balanced dielectric properties (i.e., a good balance between their insulating characteristics and compatibility with organic semiconductors) are considered particularly important for this end. Here, we introduce a simple but highly efficient strategy to realize this target by using a new type of copolymer as dielectrics. Benefiting from both high chain packing density guaranteeing dielectric properties and surface polarity optimizing molecular packing of organic semiconductors, this rationally designed copolymer dielectric endows flexible OTFTs with high mobility (5.6 cm² V⁻¹ s⁻¹), low operating voltage (3 V) and outstanding stability. Further, their applicability in integrated circuits is verified. The excellent device performance shows exciting prospects of this molecular-scale engineered copolymer for the realization of plastic high-performance integrated electronics.

Developing large-scale flexible display technologies calls for new gate dielectric materials balancing the insulating property and molecular packing of organic semiconductors. Ji et al. synthesize a dielectric copolymer contributing with charge mobility of 5 cm² V⁻¹ s⁻¹ and low operating voltage of 3 V.

Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors

Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting copolymer-based OFETs, and the use of shellac as a dielectric layer facilitates electron transport at the interface with D-A-type copolymer channels.

Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor

Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

Spontaneous Interfacial Dipole Orientation Effect of Acetic Acid Solubilized PFN

Poly[(9,9-dioctyl-2,7-fluorene)- alt-(9,9-bis(3'-( N, N-dimethylamino)propyl)-2,7-fluorene)] (PFN) is a very important interfacial modifier in organic photovoltaic and organic light-emitting diodes to improve device performance, where their molecular dipole has been regarded to play a key role. In this work, we have reported a spontaneous interfacial dipole orientation effect in acetic acid dissolved PFN, which is strongly related to the interfacial dipole and the corresponding device performance. In direct spin-coating, the interfacial dipole is 1.08 Debye with interfacial contact angle 84.8°, whereas after self-assembly of 10 min, the interfacial dipole is balanced at 4.21 Debye, with the interfacial contact angle decreasing to 76.8°. Without strong interaction with the substrate, the energy of upward amine groups is much lower than that of downward ones in theoretical simulation, which would be the driving force of this spontaneous process. The preferred conformations of PFN molecules on hydroxylated substrates have over 99% amine groups outward, and the theoretical average dipole calculated from the weight of these conformations is 4.48 Debye, which is close to the experimental result and indicates a high ratio of upward amine groups in self-assembled films. This effect obviously changes the device performance, such as an obvious positive threshold voltage shift in transistors and a distinct increase of the short-circuit current/open-circuit voltage in organic solar cells. This effect provides a deeper understanding of the PFN interlayer mechanism and has potential application in optoelectronic devices.

Aromatic Extension at 2,6-Positions of Anthracene toward an Elegant Strategy for Organic Semiconductors with Efficient Charge Transport and Strong Solid State Emission

Organic semiconductors integrating excellent charge transport with efficient solid emission are very challenging to be attained in the construction of light-emitting transistors and even for realization of electrically pumped organic lasers. Herein, we introduce naphthyl units at 2,6-positions of anthracene to achieve 2,6-di(2-naphthyl)anthracene (dNaAnt), which adopts J-aggregated mode in the solid state as a balanced strategy for excellent charge transporting and efficient solid state emission. Single crystal field-effect transistors show mobility up to 12.3 cm²·V^-1·s^-1 and a photoluminescence quantum yield of 29.2% was obtained for dNaAnt crystals. Furthermore, organic light-emitting transistors (OLETs) based on dNaAnt single crystals distribute outstanding balanced ambipolar charge transporting property (μ_h = 1.10 cm²·V^-1·s^-1, μ_e = 0.87 cm²·V^-1·s^-1) and spatially controllable emission, which is one of the best performances for OLETs.

Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors

The electrical characteristics of carbon nanotube (CNT) thin-film transistors (TFTs) strongly depend on the properties of the gate dielectric that is in direct contact with the semiconducting CNT channel materials. Here, we systematically investigated the dielectric effects on the electrical characteristics of fully printed semiconducting CNT-TFTs by introducing the organic dielectrics of poly(methyl methacrylate) (PMMA) and octadecyltrichlorosilane (OTS) to modify SiO₂ dielectric. The results showed that the organic-modified SiO₂ dielectric formed a favorable interface for the efficient charge transport in s-SWCNT-TFTs. Compared to single-layer SiO₂ dielectric, the use of organic-inorganic hybrid bilayer dielectrics dramatically improved the performances of SWCNT-TFTs such as mobility, threshold voltage, hysteresis and on/off ratio due to the suppress of charge scattering, gate leakage current and charge trapping. The transport mechanism is related that the dielectric with few charge trapping provided efficient percolation pathways for charge carriers, while reduced the charge scattering. High density of charge traps which could directly act as physical transport barriers and significantly restrict the charge carrier transport and, thus, result in decreased mobile carriers and low device performance. Moreover, the gate leakage phenomenon is caused by conduction through charge traps. So, as a component of TFTs, the gate dielectric is of crucial importance to the manufacture of high quality TFTs from the aspects of affecting the gate leakage current and device operation voltage, as well as the charge carrier transport. Interestingly, the OTS-modified SiO₂ allows to directly print horizontally aligned CNT film, and the corresponding devices exhibited a higher mobility than that of the devices with the hybrid PMMA/SiO₂ dielectric although the thickness of OTS layer is only ∼2.5 nm. Our present result may provide key guidance for the further development of printed nanomaterial electronics.

UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection

A new type of nitrogen dioxide (NO₂ ) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV-ozone (UVO)-treated polymeric gate dielectric is reported here. The NO₂ sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO₂ ] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO₂ ] = 1 ppm with the UVO-treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO₂ and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.

Chain Length Dependence of the Dielectric Constant and Polarizability in Conjugated Organic Thin Films

Dielectric materials are ubiquitous in optics, electronics, and materials science. Recently, there have been new efforts to characterize the dielectric performance of thin films composed of molecular assemblies. In this context, we investigate here the relationship between the polarizability of the constituent molecules and the film dielectric constant, using periodic density functional theory (DFT) calculations, for polyyne and saturated alkane chains. In particular, we explore the implication of the superlinear chain length dependence of the polarizability, a specific feature of conjugated molecules. We show and explain from DFT calculations and a simple depolarization model that this superlinearity is attenuated by the collective polarization. However, it is not completely suppressed. This confers a very high sensitivity of the dielectric constant to the thin film thickness. This latter can increase by a factor of 3-4 at reasonable coverages, by extending the molecular length. This significantly limits the decline of the thin film capacitance with the film thickness. Therefore, the conventional fit of the capacitance versus thickness is not appropriate to determine the dielectric constant of the film. Finally, we show that the failures of semilocal approximations of the exchange-correlation functional lead to a very significant overestimation of this effect.

Detecting 100 fW cm-2 Light with Trapped Electron Gated Organic Phototransistors

Ultraweak light detection with solid-state and cooling-free photodetectors is important for both fundamental research and practical applications. A general phototransistor architecture for detecting ultraviolet-visible light down to 100 fW cm^-2 at room temperature is demonstrated. The exceptional sensitivity stems from an amplification process triggered by incident light. A responsivity of ≈10⁷ A W^-1 is achieved.

Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors

A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors.

Mobility versus Alignment of a Semiconducting π-Extended Discotic Liquid-Crystalline Triindole

The p-type semiconducting properties of a triphenylene-fused triindole mesogen, have been studied by applying two complementary methods which have different alignment requirements. The attachment of only three flexible alkyl chains to the nitrogen atoms of this π-extended core is sufficient to induce columnar mesomorphism. High hole mobility values (0.65 cm² V^-1 s^-1) have been estimated by space-charge limited current (SCLC) measurements in a diode-like structure which are easily prepared from the melt, rendering this material a good candidate for OPVs and OLEDs devices. The mobility predicted theoretically via a hole-hopping mechanism is in very good agreement with the experimental values determined at the SCLC regime. On the other hand the hole mobility determined on solution processed thin film transistors (OFETs) is significantly lower, which can be rationalized by the high tendency of these large molecules to align on surfaces with their extended π-conjugated core parallel to the substrate as demonstrated by SERS. Despite the differences obtained with the two methods, the acceptable performance found on OFETs fabricated by simple drop-casting processing of such an enlarged aromatic core is remarkable and suggests facile hopping between neighboring molecular columns owing to the large conducting/isolating ratio found in this discotic compound.

Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics

The dielectric response of a material is central to numerous processes spanning the fields of chemistry, materials science, biology, and physics. Despite this broad importance across these disciplines, describing the dielectric environment of a molecular system at the level of first-principles theory and computation remains a great challenge and is of importance to understand the behavior of existing systems as well as to guide the design and synthetic realization of new ones. Furthermore, with recent advances in molecular electronics, nanotechnology, and molecular biology, it has become necessary to predict the dielectric properties of molecular systems that are often difficult or impossible to measure experimentally. In these scenarios, it is would be highly desirable to be able to determine dielectric response through efficient, accurate, and chemically informative calculations. A good example of where theoretical modeling of dielectric response would be valuable is in the development of high-capacitance organic gate dielectrics for unconventional electronics such as those that could be fabricated by high-throughput printing techniques. Gate dielectrics are fundamental components of all transistor-based logic circuitry, and the combination high dielectric constant and nanoscopic thickness (i.e., high capacitance) is essential to achieving high switching speeds and low power consumption. Molecule-based dielectrics offer the promise of cheap, flexible, and mass producible electronics when used in conjunction with unconventional organic or inorganic semiconducting materials to fabricate organic field effect transistors (OFETs). The molecular dielectrics developed to date typically have limited dielectric response, which results in low capacitances, translating into poor performance of the resulting OFETs. Furthermore, the development of better performing dielectric materials has been hindered by the current highly empirical and labor-intensive pace of synthetic progress. An accurate and efficient theoretical computational approach could drastically decrease this time by screening potential dielectric materials and providing reliable design rules for future molecular dielectrics. Until recently, accurate calculation of dielectric responses in molecular materials was difficult and highly approximate. Most previous modeling efforts relied on classical formalisms to relate molecular polarizability to macroscopic dielectric properties. These efforts often vastly overestimated polarizability in the subject materials and ignored crucial material properties that can affect dielectric response. Recent advances in first-principles calculations via density functional theory (DFT) with periodic boundary conditions have allowed accurate computation of dielectric properties in molecular materials. In this Account, we outline the methodology used to calculate dielectric properties of molecular materials. We demonstrate the validity of this approach on model systems, capturing the frequency dependence of the dielectric response and achieving quantitative accuracy compared with experiment. This method is then used as a guide to new high-capacitance molecular dielectrics by determining what materials and chemical properties are important in maximizing dielectric response in self-assembled monolayers (SAMs). It will be seen that this technique is a powerful tool for understanding and designing new molecular dielectric systems, the properties of which are fundamental to many scientific areas.

Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.

Microcrystallization of a Solution-Processable Organic Semiconductor in Capillaries for High-Performance Ambipolar Field-Effect Transistors

We report on the use of microcrystallization in capillaries to fabricate patterned crystalline microstructures of the low-bandgap ambipolar quinoidal quaterthiophene derivative (QQT(CN)4) from a chloroform solution. Aligned needle-shaped QQT(CN)4 crystals were formed in thin film microstructures using either open- or closed- capillaries made of polydimethylsiloxane (PDMS). Their charge transport properties were evaluated in a bottom-gate top-contact transistor configuration. Hole and electron mobilities were found to be as high as 0.17 and 0.083 cm(2) V(-1) s(-1), respectively, approaching the values previously obtained in individual QQT(CN)4 single crystal microneedles. It was possible to control the size of the needle crystals and the microline arrays by adjusting the structure of the PDMS mold and the concentration of QQT(CN)4 solution. These results demonstrate that the microcrystallization in capillaries technique can be used to simultaneously pattern organic needle single crystals and control the microcrystallization processes. Such a simple and versatile method should be promising for the future development of high-performance organic electronic devices.

Control of Threshold Voltage for Top-Gated Ambipolar Field-Effect Transistor by Gate Buffer Layer

The threshold voltage and onset voltage for p-channel and n-channel regimes of solution-processed ambipolar organic transistors with top-gate/bottom-contact (TG/BC) geometry were effectively tuned by gate buffer layers in between the gate electrode and the dielectric. The work function of a pristine Al gate electrode (-4.1 eV) was modified by cesium carbonate and vanadium oxide to -2.1 and -5.1 eV, respectively, which could control the flat-band voltage, leading to a remarkable shift of transfer curves in both negative and positive gate voltage directions without any side effects. One important feature is that the mobility of transistors is not very sensitive to the gate buffer layer. This method is simple but useful for electronic devices where the threshold voltage should be precisely controlled, such as ambipolar circuits, memory devices, and light-emitting device applications.