Fully printed, high performance carbon nanotube thin-film transistors on flexible substrates

Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors

Carbon nanotube (CNT) network channels constructed using a high-purity CNT solution for use in CNT thin-film transistors have the advantages of the possibility of requiring a low-temperature process and needing no special equipment. However, there are empty spaces between individual CNTs, resulting in unexpected effects. In this study, double-gate (DG) CNT network transistors were fabricated and measured in four different configurations to observe the capacitive coupling effects between the top gate (TG) and bottom gate (BG) in the DG structure. As a result, the electrical characteristics measured with the BG with a thicker gate oxide while floating the TG were similar to those measured with the TG with a thinner gate oxide. A comparison of the measured transfer curves showed that TG and BG were strongly coupled through the empty spaces in the channels. In addition, we evaluated the capacitance coupling effect due to changes in the CNT density, which is closely related to the empty space of the network channel. Finally, we proposed a method to determine the effective gate capacitance by considering the empty spaces between CNTs, which enabled the accurate evaluation of mobility. The effects of these materials were demonstrated by fabricating transistors using Al2O3, HfO2, and ZrO2 as TG oxide materials. By focusing on considerations based on the properties of CNT materials, our study provides valuable insights into accurate electrical modeling and potential advancements in CNT-based devices.

A Review of Structure Engineering of Strain-Tolerant Architectures for Stretchable Electronics

Stretchable electronics possess significant advantages over their conventional rigid counterparts and boost game-changing applications such as bioelectronics, flexible displays, wearable health monitors, etc. It is, nevertheless, a formidable task to impart stretchability to brittle electronic materials such as silicon. This review provides a concise but critical discussion of the prevailing structural engineering strategies for achieving strain-tolerant electronic devices. Not only the more commonly discussed lateral designs of structures such as island-bridge, wavy structures, fractals, and kirigami, but also the less discussed vertical architectures such as strain isolation and elastoplastic principle are reviewed. Future opportunities are envisaged at the end of the paper.

Tuning the charge carrier polarity of roll-to-roll gravure printed carbon nanotube-based thin film transistors by an atomic layer deposited alumina nanolayer

Charge carrier polarity tuning in printed thin film transistors (TFTs) is a crucial step in order to obtain complementary printed devices. In this work, we studied the effect of an Al₂O₃ passivation layer on printed single-walled carbon nanotube (SWCNT) based TFTs to tune the charge carrier polarity. By varying the atomic layer deposition (ALD) temperature and Al₂O₃ layer thickness, we can tune the doping degree of Al₂O₃ to tailor the polarity of printed SWCNT-based TFTs (SWCNT-TFTs). The precise control of threshold voltage (V_th) and polarity from p-type to well-balanced ambipolar, and n-type SWCNT-TFTs is successfully demonstrated with high repeatability by optimizing the ALD temperature and Al₂O₃ layer thickness based on 20 printed samples per test. As a proof-of-concept, inverter logic circuits using the SWCNT-TFT with different polarity types are demonstrated. The ambipolar device-based inverter exhibits a voltage gain of 3.9 and the CMOS-based inverter exhibits a gain of approximately 4.3, which is comparable to the current roll-to-roll (R2R) printed inverter circuits. Different thicknesses of Al₂O₃ layer, coated by the ALD at different temperatures and thicknesses, provide a deep understanding of the device fabrication and control process to implement the tailored doping method to efficiently realize R2R printed SWCNT-TFT-based complementary electronic devices.

Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. This letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current-voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 10¹⁶ ion/cm² at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.

3D printed electronics with nanomaterials

A large variety of printing, deposition and writing techniques have been incorporated to fabricate electronic devices in the last decades. This approach, printed electronics, has gained great interest in research and practical applications and is successfully fuelling the growth in materials science and technology. On the other hand, a new player is emerging, additive manufacturing, called 3D printing, introducing a new capability to create geometrically complex constructs with low cost and minimal material waste. Having such tremendous technology in our hands, it was just a matter of time to combine advances of printed electronics technology for the fabrication of unique 3D structural electronics. Nanomaterial patterning with additive manufacturing techniques can enable harnessing their nanoscale properties and the fabrication of active structures with unique electrical, mechanical, optical, thermal, magnetic and biological properties. In this paper, we will briefly review the properties of selected nanomaterials suitable for electronic applications and look closer at the current achievements in the synergistic integration of nanomaterials with additive manufacturing technologies to fabricate 3D printed structural electronics. The focus is fixed strictly on techniques allowing as much as possible fabrication of spatial 3D objects, or at least conformal ones on 3D printed substrates, while only selected techniques are adaptable for 3D printing of electronics. Advances in the fabrication of conductive paths and circuits, passive components, antennas, active and photonic components, energy devices, microelectromechanical systems and sensors are presented. Finally, perspectives for development with new nanomaterials, multimaterial and hybrid techniques, bioelectronics, integration with discrete components and 4D-printing are briefly discussed.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

Printed n- and p-Channel Transistors using Silicon Nanoribbons Enduring Electrical, Thermal, and Mechanical Stress

Printing technologies are changing the face of electronics with features such as resource-efficiency, low-cost, and novel form factors. While significant advances have been made in terms of organic electronics, the high-performance and stable transistors by printing, and their large-scale integration leading to fast integrated circuits remains a major challenge. This is because of the difficulties to print high-mobility semiconducting materials and the lack of high-resolution printing techniques. Herein, we present silicon based printed n- and p-channel transistors to demonstrate the possibility of developing high-performance complementary metal-oxide-semiconductor (CMOS) computing architecture. The direct roll transfer printing is used here for deterministic assembly of high-mobility single crystal silicon nanoribbons arrays on a flexible polyimide substrate. This is followed by high-resolution electrohydrodynamic printing to define source/drain/gate electrodes and to encapsulate, thus leading to printed devices. The printed transistors show effective peak mobilities of 15 cm2/(V s) (n-channel) and 5 cm2/(V s) (p-channel) at low 1 V drain bias. Furthermore, the effect of electrical, mechanical, and thermal stress on the performance and stability of the encapsulated transistors is investigated. The transistors showed stable transfer characteristics even after: (i) continuous 4000 transfer cycles, (ii) excruciating 10000 bending cycles at different bending radii (40, 25, and 15 mm), and (iii) between 15 and 60 °C temperatures.

High-Mobility Flexible Transistors with Low-Temperature Solution-Processed Tungsten Dichalcogenides

The investigation of high-mobility two-dimensional (2D) flakes beyond molybdenum disulfide (MoS₂) will be necessary to create a library of high-mobility solution-processed networks that conform to substrates and remain functional over thousands of bending cycles. Here we report electrochemical exfoliation of large-aspect-ratio (>100) semiconducting flakes of tungsten diselenide (WSe₂) and tungsten disulfide (WS₂) as well as MoS₂ as a comparison. We use Langmuir-Schaefer coating to achieve highly aligned and conformal flake networks, with minimal mesoporosity (∼2-5%), at low processing temperatures (120 °C) and without acid treatments. This allows us to fabricate electrochemical transistors in ambient air, achieving average mobilities of μ_MoS2 ≈ 11 cm² V^-1 s^-1, μ_WS2 ≈ 9 cm² V^-1 s^-1, and μ_WSe2 ≈ 2 cm² V^-1 s^-1 with a current on/off ratios of I_on/I_off ≈ 2.6 × 10³, 3.4 × 10³, and 4.2 × 10⁴ for MoS₂, WS₂, and WSe₂, respectively. Moreover, our transistors display threshold voltages near ∼0.4 V with subthreshold slopes as low as 182 mV/dec, which are essential factors in maintaining power efficiency and represent a 1 order of magnitude improvement in the state of the art. Furthermore, the performance of our WSe₂ transistors is maintained on polyethylene terephthalate (PET) even after 1000 bending cycles at 1% strain.

All-Aerosol-Jet-Printed Carbon Nanotube Transistor with Cross-Linked Polymer Dielectrics

The printability of reliable gate dielectrics and their influence on the stability of the device are some of the primary concerns regarding the practical application of printed transistors. Major ongoing research is focusing on the structural properties of dielectric materials and deposition parameters to reduce interface charge traps and hysteresis caused by the dielectric-semiconductor interface and dielectric bulk. This research focuses on improving the dielectric properties of a printed polymer material, cross-linked polyvinyl phenol (crPVP), by optimizing the cross-linking parameters as well as the aerosol jet printability. These improvements were then applied to the fabrication of completely printed carbon nanotube (CNT)-based thin-film transistors (TFT) to reduce the gate threshold voltage (V_th) and hysteresis in V_th during device operation. Finally, a fully aerosol-jet-printed CNT device was demonstrated using a 2:1 weight ratio of PVP with the cross-linker poly(melamine-co-formaldehyde) methylated (PMF) in crPVP as the dielectric material. This device shows significantly less hysteresis and can be operated at a gate threshold voltage as low as -4.8 V with an on/off ratio of more than 10⁴.

Ionic dielectrics for fully printed carbon nanotube transistors: impact of composition and induced stresses

Printed carbon nanotube thin-film transistors (CNT-TFTs) are candidates for flexible electronics with printability on a wide range of substrates. Among the layers comprising a CNT-TFT, the gate dielectric has proven most difficult to additively print owing to challenges in film uniformity, thickness, and post-processing requirements. Printed ionic dielectrics show promise for addressing these issues and yielding devices that operate at low voltages thanks to their high-capacitance electric double layers. However, the printing of ionic dielectrics in their various compositions is not well understood, nor is the impact of certain stresses on these materials. In this work, we studied three compositionally distinct ionic dielectrics in fully printed CNT-TFTs: the polar-fluorinated polymer elastomer PVDF-HFP; an ion gel consisting of triblock polymer PS-PMMA-PS and ionic liquid EMIM-TFSI; and crystalline nanocellulose (CNC) with a salt concentration of 0.05%. Although ion gel has been thoroughly studied, e-PVDF-HFP and CNC printing are relatively new and this study provides insights into their ink formulation, print processing, and performance as gate dielectrics. Using a consistent aerosol jet printing approach, each ionic dielectric was printed into similar CNT-TFTs, allowing for direct comparison through extensive characterization, including mechanical and electrical stress tests. The ionic dielectrics were found to have distinct operational dependencies based on their compositional and ionic attributes. Overall, the results reveal a number of trade-offs that must be managed when selecting a printable ionic dielectric, with CNC showing the strongest performance for low-voltage operation but the ion gel and elastomer exhibiting better stability under bias and mechanical stresses.

Carbon nanotube transistors: Making electronics from molecules

Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in conjunction with silicon electronics, and can potentially be used as a platform for high-performance digital electronics as well as radio-frequency and sensing applications. Recent progress in the materials, devices, and technologies related to carbon nanotube transistors is briefly reviewed. Emphasis is placed on the most broadly impactful advancements that have evolved from single-nanotube devices to implementations with aligned nanotubes and even nanotube thin films. There are obstacles that remain to be addressed, including material synthesis and processing control, device structure design and transport considerations, and further integration demonstrations with improved reproducibility and reliability; however, the integration of more than 10,000 devices in single functional chips has already been realized.

Flexible biochemical sensors for point-of-care management of diseases: a review

Health problems have been widely concerned by all mankind. Real-time monitoring of disease-related biomarkers can feedback the physiological status of human body in time, which is very helpful to the diseases management of healthcare. However, conventional non-flexible/rigid biochemical sensors possess low fit and comfort with the human body, hence hindering the accurate and comfortable long-time health monitoring. Flexible and stretchable materials make it possible for sensors to be continuously attached to the human body with good fit, and more precise and higher quality results can be obtained. Thus, tremendous attention has been paid to flexible biochemical sensors in point-of-care (POC) for real-time monitoring the entire disease process. Here, recent progress on flexible biochemical sensors for management of various diseases, focusing on chronic and communicable diseases, is reviewed, and the detection principle and performance of these flexible biochemical sensors are discussed. Finally, some directions and challenges are proposed for further development of flexible biochemical sensors.

An epidermal electronic system for physiological information acquisition, processing, and storage with an integrated flash memory array

Epidermal electronic systems that simultaneously provide physiological information acquisition, processing, and storage are in high demand for health care/clinical applications. However, these system-level demonstrations using flexible devices are still challenging because of obstacles in device performance, functional module construction, or integration scale. Here, on the basis of carbon nanotubes, we present an epidermal system that incorporates flexible sensors, sensor interface circuits, and an integrated flash memory array to collect physiological information from the human body surface; amplify weak biosignals by high-performance differential amplifiers (voltage gain of 27 decibels, common-mode rejection ratio of >43 decibels, and gain bandwidth product of >22 kilohertz); and store the processed information in the memory array with performance on par with industrial standards (retention time of 10⁸ seconds, program/erase voltages of ±2 volts, and endurance of 10⁶ cycles). The results shed light on the great application potential of epidermal electronic systems in personalized diagnostic and physiological monitoring.

Recent Advances in Stretchable and Wearable Capacitive Electrophysiological Sensors for Long-Term Health Monitoring

Over the past several years, wearable electrophysiological sensors with stretchability have received significant research attention because of their capability to continuously monitor electrophysiological signals from the human body with minimal body motion artifacts, long-term tracking, and comfort for real-time health monitoring. Among the four different sensors, i.e., piezoresistive, piezoelectric, iontronic, and capacitive, capacitive sensors are the most advantageous owing to their reusability, high durability, device sterilization ability, and minimum leakage currents between the electrode and the body to reduce the health risk arising from any short circuit. This review focuses on the development of wearable, flexible capacitive sensors for monitoring electrophysiological conditions, including the electrode materials and configuration, the sensing mechanisms, and the fabrication strategies. In addition, several design strategies of flexible/stretchable electrodes, body-to-electrode signal transduction, and measurements have been critically evaluated. We have also highlighted the gaps and opportunities needed for enhancing the suitability and practical applicability of wearable capacitive sensors. Finally, the potential applications, research challenges, and future research directions on stretchable and wearable capacitive sensors are outlined in this review.

Precise Deposition of Carbon Nanotube Bundles by Inkjet-Printing on a CMOS-Compatible Platform

Carbon nanotubes (CNTs) are ultimately small structures, attractive for future nanoelectronics. CNT-bundles on Si nanostructures can offer an alternative pathway to build hybrid CMOS-compatible devices. To develop a simple method of using such CNT-bundles as transistor channels, we fabricated semiconductor single-walled CNT field-effect transistors using inkjet printing on a CMOS-compatible platform. We investigated a method of producing stable CNT solutions without surfactants, allowing for CNT debundling and dispersion. An inkjet-printing system disperses CNT-networks with ultimately low density (down to discrete CNT-bundles) in Al source-drain gaps of transistors. Despite the small number of networks and random positions, such CNT-bundles provide paths to the flow current. For enhanced controllability, we also demonstrate the manipulation of CNT-networks using an AFM technique.

Cost-effective method for fabricating carbon nanotube network transistors by reusing a 99% semiconducting carbon nanotube solution

Carbon nanotubes (CNTs) are one-dimensional materials that have been proposed to replace silicon semiconductors and have been actively studied due to their high carrier mobility, high current density, and high mechanical flexibility. Specifically, highly purified, pre-separated, and solution-processed semiconducting CNTs are suitable for mass production. These CNTs have advantages, such as room-temperature processing compatibility, while enabling a fast and straightforward manufacturing process. In this paper, CNT network transistors were fabricated on a total of five 8 inch wafers by reusing a highly purified and pre-separated 99% semiconductor-enriched CNT solution. The results confirmed that the density of semiconducting CNTs deposited on the five selected wafers was notably uniform, even though the CNT solution was reused up to four times after the initial CNT deposition. Moreover, there was no significant degradation in the key CNT network transistor metrics. Therefore, we believe that our findings regarding this CNT reuse method may provide additional guidance in the field of wafer-scale CNT electronics and may contribute strongly to the development of practical device applications at an ultralow cost.

Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor

In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry.

Recent Insights and Multifactorial Applications of Carbon Nanotubes

Nanotechnology has undergone significant development in recent years, particularly in the fabrication of sensors with a wide range of applications. The backbone of nanotechnology is nanostructures, which are determined on a nanoscale. Nanoparticles are abundant throughout the universe and are thought to be essential building components in the process of planet creation. Nanotechnology is generally concerned with structures that are between 1 and 100 nm in at least one dimension and involves the production of materials or electronics that are that small. Carbon nanotubes (CNTs) are carbon-based nanomaterials that have the structure of tubes. Carbon nanotubes are often referred to as the kings of nanomaterials. The diameter of carbon is determined in nanometers. They are formed from graphite sheets and are available in a variety of colors. Carbon nanotubes have a number of characteristics, including high flexibility, good thermal conductivity, low density, and chemical stability. Carbon nanotubes have played an important part in nanotechnology, semiconductors, optical and other branches of materials engineering owing to their remarkable features. Several of the applications addressed in this review have already been developed and used to benefit people worldwide. CNTs have been discussed in several domains, including industry, construction, adsorption, sensors, silicon chips, water purifiers, and biomedical uses, to show many treatments such as injecting CNTs into kidney cancers in rats, drug delivery, and directing a near-infrared laser at the cancers. With the orderly development of research in this field, additional therapeutic modalities will be identified, mainly for dispersion and densification techniques and targeted drug delivery systems for managing and curing posterior cortical atrophy. This review discusses the characteristics of carbon nanotubes as well as therapeutic applications such as medical diagnostics and drug delivery.

E-Skin: The Dawn of a New Era of On-Body Monitoring Systems

Real-time "on-body" monitoring of human physiological signals through wearable systems developed on flexible substrates (e-skin) is the next target in human health control and prevention, while an alternative to bulky diagnostic devices routinely used in clinics. The present work summarizes the recent trends in the development of e-skin systems. Firstly, we revised the material development for e-skin systems. Secondly, aspects related to fabrication techniques were presented. Next, the main applications of e-skin systems in monitoring, such as temperature, pulse, and other bio-electric signals related to health status, were analyzed. Finally, aspects regarding the power supply and signal processing were discussed. The special features of e-skin as identified contribute clearly to the developing potential as in situ diagnostic tool for further implementation in clinical practice at patient personal levels.

Copper Tetracyanoquinodimethane (CuTCNQ): A Metal-Organic Semiconductor for Room-Temperature Visible to Long-Wave Infrared Photodetection

Mid-wave and long-wave infrared (MWIR and LWIR) detection play vital roles in applications that include health care, remote sensing, and thermal imaging. However, detectors in this spectral range often require complex fabrication processes and/or cryogenic cooling and are typically expensive, which motivates the development of simple alternatives. Here, we demonstrate broadband (0.43-10 μm) room-temperature photodetection based on copper tetracyanoquinodimethane (CuTCNQ), a metal-organic semiconductor, synthesized via a facile wet-chemical reaction. The CuTCNQ crystals are simply drop-cast onto interdigitated electrode chips to realize photoconductors. The photoresponse is governed by a combination of interband (0.43-3.35 μm) and midgap (3.35-10 μm) transitions. The devices show response times (∼365 μs) that would be sufficient for many infrared applications (e.g., video rate imaging), with a frequency cutoff point of 1 kHz.

Determination of the electronic transport in type separated carbon nanotubes thin films doped with gold nanocrystals

We report a systematic theoretical and experimental investigation on the electronic transport evolution in metallic and semiconducting carbon nanotubes thin films enriched by gold nanocrystals. We used an ultra-clean production method of both types of single-walled carbon nanotube thin films with/without gold nanocrystals, which were uniformly dispersed in the whole volume of the thin films, causing a modification of the doping level of the films (verified by Raman spectroscopy). We propose a modification of the electronic transport model with the additional high-temperature features that allow us to interpret the transport within a broader temperature range and that are related to the conductivity type of carbon nanotubes. Moreover, we demonstrate, that the proposed model is also working for thin films with the addition of gold nanocrystals, and only a change of the conductivity level of our samples is observed caused by modification of potential barriers between carbon nanotubes. We also find unusual behavior of doped metallic carbon nanotube thin film, which lowers its conductivity due to doping.

Printed carbon nanotube thin-film transistors: progress on printable materials and the path to applications

Printing technologies have attracted significant attention owing to their potential use in the low-cost manufacturing of custom or large-area flexible electronics. Among the many printable electronic materials that have been explored, semiconducting carbon nanotubes (CNTs) have shown increasing promise based on their exceptional electrical and mechanical properties, relative stability in air, and compatibility with several printing techniques to form semiconducting thin films. These attractive attributes make printed CNT thin films promising for applications including, but not limited to, sensors and display backplanes - at the heart of which is electronics' most versatile device: the transistor. In this review, we present a summary of recent advancements in the field of printed carbon nanotube thin-film transistors (CNT-TFTs). In addition to an introduction of different printing techniques, together with their strengths and limitations, we discuss key aspects of ink/material selection and processing of various device components, including the CNT channels, contacts, and gate insulators. It is clear that printed CNT-TFTs are rapidly advancing, but there remain challenges, which are discussed along with current techniques to resolve them and future developments towards practical applications from these devices. There has been interest in low-cost, printable transistors for many years and the CNT-TFTs show great promise for delivering, but will not become a reality without further research advancement.

Recent Progress in Manufacturing Techniques of Printed and Flexible Sensors: A Review

This review provides an outlook on some of the significant research work done on printed and flexible sensors. Printed sensors fabricated on flexible platforms such as paper, plastic and textiles have been implemented for wearable applications in the biomedical, defense, food, and environmental industries. This review discusses the materials, characterization methods, and fabrication methods implemented for the development of the printed and flexible sensors. The applications, challenges faced and future opportunities for the printed and flexible sensors are also presented in this review.

Fabrication of Screen Printing-Based AgNWs Flexible Transparent Conductive Film with High Stability

Flexible transparent conductive thin films (TCFs) prepared from Silver nanowires (AgNWs) have attractive features of low cost, flexibility, and solution-processed, but the usual manufacturing methods could still be hard to be scaled up. In addition, large-scale/large-area fabrication process with industrialized potential is strongly needed. In this paper, the flexible TCFs with high stability are obtained via using screen printing method to print the AgNWs inks on a flexible and transparent substrate. The micro-structure of the AgNWs patterns is investigated by optical microscope and scanning electron microscope. Furthermore, the sheet resistance, light transmittance, and film thickness of the AgNWs patterns prepared under different conditions are characterized to explore the influence of different factors on its optical and electrical properties.

Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors

Modern society is striving for digital connectivity that demands information security. As an emerging technology, printed electronics is a key enabler for novel device types with free form factors, customizability, and the potential for large-area fabrication while being seamlessly integrated into our everyday environment. At present, information security is mainly based on software algorithms that use pseudo random numbers. In this regard, hardware-intrinsic security primitives, such as physical unclonable functions, are very promising to provide inherent security features comparable to biometrical data. Device-specific, random intrinsic variations are exploited to generate unique secure identifiers. Here, we introduce a hybrid physical unclonable function, combining silicon and printed electronics technologies, based on metal oxide thin film devices. Our system exploits the inherent randomness of printed materials due to surface roughness, film morphology and the resulting electrical characteristics. The security primitive provides high intrinsic variation, is non-volatile, scalable and exhibits nearly ideal uniqueness.

Uniform and Stable Aerosol Jet Printing of Carbon Nanotube Thin-Film Transistors by Ink Temperature Control

Semiconducting carbon nanotube (CNT) networks exhibit electrical, mechanical, and chemical properties attractive for thin-film applications, and printing allows for scalable and economically favorable fabrication of CNT thin-film transistors (TFTs). However, device-to-device variation of printed CNT-TFTs remains a concern, which largely stems from variations in printed CNT thin-film morphology and resulting properties. In this work, we overcome the challenges associated with printing uniformity and demonstrate an aerosol jet printing process that yields devices exhibiting a hole mobility of μ_h = 12.5 cm²/V·s with a relative standard deviation as small as 4% (from over 38 devices). The enabling factors of such high uniformity include control of the CNT ink bath temperature during printing, ink formulation with nonvolatile and viscosifying additives, and a thermal treatment for polymer removal. It is discovered that a low CNT ink temperature benefits aerosol jet printing uniformity and stability in both short-term (∼1 min) and long-term (∼1 h) printing settings. These findings shed light on the effect of a commonly overlooked dimension of CNT aerosol jet printing and provide a practical strategy for large-scale, high-consistency realization of CNT-TFTs.

Dense Assembly of Finely Patterned Semiconducting Single-Walled Carbon Nanotubes via a Selective Transfer Method of Nanotube-Attracting Layers

Development of technology for assembled single-walled carbon nanotube (SWCNT) film with the fine resolution is an essential technique for penetrating practical electronic applications. A promising approach is the assembly method by adding a chemical-functionalizing substrate to enhance affinity between the SWCNTs and the substrate. However, the various introduced approaches for solution-based assembly have suffered from low SWCNT deposition selectivity or low SWCNT deposition density. Herein, we demonstrated a facile method for selectively assembling semiconducting SWCNT network on the substrate. The substrate was prepared via a transfer printing of a poly-l-lysine (PLL)-coated poly(dimethylsiloxane) (PDMS) stamp. The thermal-assisted transfer method enabled an ultrafine PLL pattern (≤4 μm) and a high transfer yield (96.5%) by only one-time stamping without a change of the SWCNT-attracting nature. So, semiconducting SWCNTs were deposited on the patterned regions selectively and precisely. The benefit of the patterned semiconducting SWCNTs was lowering leakage current and turn-on voltage in the transfer characteristics by suppressing attachment of unnecessary SWCNT network. They showed excellent electrical performance, a log₁₀(I_on/I_off) ratio of 4.76, and an average value of linear field-effect mobility of 7.56 cm²/(V s). This research provides a simple but high-quality assembling technique of semiconducting SWCNTs, thereby improving the feasibility of solution-processed SWCNT-TFTs.

Directly drawn top-gate semiconducting carbon nanotube thin-film transistors and complementary inverters

As the emerging demand for electronic devices that are simple, cost effective and capable of rapid fabrication has increased, novel fabrication techniques for designing and manufacturing such devices have attracted remarkable research interest. One method for prototyping these electronic devices is to draw them using a handwriting tool that is commonly available. In this work, we demonstrate a transistor and complementary logic inverter that are directly drawn using a brush and that are based on solution-based materials such as semiconducting carbon nanotubes (CNTs), silver ink and paste, and cross-linked poly(4-vinylphenol) (cPVP). The directly drawn CNT thin-film transistor (TFT) has p-type behavior due to the adsorption of oxygen and moisture, a high current on/off ratio (approximately 10³), and a low operating voltage. By employing a solution-based chemical doping treatment with an amine-rich polymer, polyethyleneimine (PEI), that has strong electron-donating ability, the drawn p-type CNT-TFT is successfully converted to an n-type CNT-TFT. Therefore, we fabricate a drawn complementary logic inverter consisting of the p-type CNT-TFT and PEI-treated n-type CNT-TFT and evaluate its electrical performance.

Flexible sensor matrix film-based wearable plantar pressure force measurement and analysis system

Plantar pressure force data derived from gait and posture are commonly used as health indicators for foot diagnosis, injury prevention, and rehabilitation. This study developed a wearable plantar pressure force measurement and analysis (WPPFMA) system based on a flexible sensor matrix film to monitor plantar pressure force in real time. The developed system comprised a flexible sensor matrix film embedded in the insole of the shoe, a wearable data acquisition (DAQ) device with a Bluetooth module, and dedicated software with an intuitive graphical user interface for displaying the plantar pressure force data from receivers by using a terminal unit (laptop or smart-phone). The flexible sensor matrix film integrated 16 piezoresistive cell sensors to detect pressure force at different anatomical zones of the plantar and under different body positions. The signals from the flexible sensor matrix film were collected using the DAQ module embedded in the shoe and transmitted to the receivers through Bluetooth. The real-time display and analysis software can monitor, visualize, and record the detailed plantar pressure force data, such as average pressure force, maximum pressure force, and pressure force distributions and variations over time. The outcomes of the trials in which the system was worn revealed the applicability of the developed WPPFMA system for monitoring plantar pressure force under static and dynamic wearing conditions. The plantar pressure force data derived from this system provide valuable insights for personal foot care, gait analysis, and clinical diagnosis.

Challenges in Design and Fabrication of Flexible/Stretchable Carbon- and Textile-Based Wearable Sensors for Health Monitoring: A Critical Review

To demonstrate the wearable flexible/stretchable health-monitoring sensor, it is necessary to develop advanced functional materials and fabrication technologies. Among the various developed materials and fabrication processes for wearable sensors, carbon-based materials and textile-based configurations are considered as promising approaches due to their outstanding characteristics such as high conductivity, lightweight, high mechanical properties, wearability, and biocompatibility. Despite these advantages, in order to realize practical wearable applications, electrical and mechanical performances such as sensitivity, stability, and long-term use are still not satisfied. Accordingly, in this review, we describe recent advances in process technologies to fabricate advanced carbon-based materials and textile-based sensors, followed by their applications such as human activity and electrophysiological sensors. Furthermore, we discuss the remaining challenges for both carbon- and textile-based wearable sensors and then suggest effective strategies to realize the wearable sensors in health monitoring.

High-Temperature-Annealed Flexible Carbon Nanotube Network Transistors for High-Frequency Wearable Wireless Electronics

Semiconducting single-walled carbon nanotubes (SWNTs) are potential active materials for fast-growing flexible/wearable applications with low-power dissipation, especially suitable for increasingly important radio-frequency (RF) wireless biosensor systems. However, the operation frequency of the existing flexible carbon nanotube field-effect transistors (CNT-FETs) is far below the current state-of-the-art GSM spectrum frequency band (typical 850 MHz) for near-field wireless communication applications. In this paper, we successfully conduct a 900 °C annealing process for the flexible CNT-FETs and hence significantly improve their operation frequency up to 2.1 gigahertz (GHz), making it possible to cover the current GSM spectra for integrated wireless sensor systems. The high-temperature annealing process significantly improves the electrical characteristic of the flexible CNT-FETs by removing the surfactant impurities of the SWNT materials. The obtained flexible CNT-FETs exhibit record transconductance (g_m) as high as 48 μS/μm. Despite an applied strain level of 2%, a characteristic frequency of over 1 GHz is observed. Further demonstration of GHz performance is also exhibited for flexible RF integrated circuits (ICs) such as frequency multipliers and mixers, which are the fundamental components for wireless applications. This work offers a new pathway for realizing SWNT-based wearable wireless GHz sensor systems with power efficiency.

Fabrication of Carbon Nanotube Thin Films for Flexible Transistors by Using a Cross-Linked Amine Polymer

Owing to their remarkable properties, single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) are expected to be used in various flexible electronics applications. To fabricate SWCNT channel layers for TFTs, solution-based film formation on a self-assembled monolayer (SAM) covered with amino groups is commonly used. However, this method uses highly oxidized surfaces, which is not suitable for flexible polymeric substrates. In this work, a solution-based SWCNT film fabrication using methoxycarbonyl polyallylamine (Moc-PAA) is reported. The NH₂ -terminated surface of the cross-linked Moc-PAA layer enables the formation of highly dense and uniform SWCNT networks on both rigid and flexible substrates. TFTs that use the fabricated SWCNT thin film exhibited excellent performance with small variations. The presented simple method to access SWCNT thin film accelerates the realization of flexible nanoelectronics.

Facile Method for Obtaining Gold-Coated Polyester Surfaces with Antimicrobial Properties

The antimicrobial and antifungal activity of polymers used in medical devices has been extensively studied due to the growing impact of hospital-related infections in patients. The ideal biocidal polymeric materials should be very effective in the microorganism’s inhibition, not toxic to the human body, and environmentally friendly. In this context, this work is aimed at obtaining antimicrobial and antifungal properties at the polyester film surfaces without introducing toxic effects. Poly (ethylene terephthalate) (PET) films were functionalized with Ar plasma and then immersed in a solution containing gold nanoparticles (AuNps). The results demonstrated the appearance of the hydrophilic groups on the film surface after modification of PET film by plasma Ar treatment and the formation of the polar groups such as C=O, COO-, and OH, which then reacted with AuNps. The changes induced in the treated polymer samples were investigated in terms of AuNp adsorption efficiency on polyester film by contact angle, profilometry, Scanning Electron Microscopy (SEM), Attenuated Total Reflectance Spectroscopy-Fourier Transform Infrared (ATR-FTIR), and X-ray Photoelectron Spectroscopy (XPS) measurements. The morphological and structural analyses have shown a good adhesion of AuNps at treated film surfaces. The results of biocompatibility antimicrobial and antifungal tests proved the nontoxic behavior of the sample and its good antimicrobial and antifungal activity.

Mechanically-Guided Structural Designs in Stretchable Inorganic Electronics

Over the past decade, the area of stretchable inorganic electronics has evolved very rapidly, in part because the results have opened up a series of unprecedented applications with broad interest and potential for impact, especially in bio-integrated systems. Low modulus mechanics and the ability to accommodate extreme mechanical deformations, especially high levels of stretching, represent key defining characteristics. Most existing studies exploit structural material designs to achieve these properties, through the integration of hard inorganic electronic components configured into strategic 2D/3D geometries onto patterned soft substrates. The diverse structural geometries developed for stretchable inorganic electronics are summarized, covering the designs of functional devices and soft substrates, with a focus on fundamental principles, design approaches, and system demonstrations. Strategies that allow spatial integration of 3D stretchable device layouts are also highlighted. Finally, perspectives on the remaining challenges and open opportunities are provided.

Thin dielectric-layer-enabled low-voltage operation of fully printed flexible carbon nanotube thin-film transistors

The quality of printable dielectric layer has become one of the major obstacles to achieving high-performance fully printed transistors. A thick dielectric layer will require high gate voltage to switch the transistors on and off, which will cause high power dissipation in printed devices. In response to this challenge, fully printed carbon nanotube (CNT)-based thin-film transistors (TFTs) have been fabricated on flexible membranes such as polyimide and liquid crystal polymer using aerosol jet printing. These devices can be operated at bias voltages below ±10 V (drain/gate voltages around ±6 V). This is much smaller than the previously reported values for fully printed CNT-TFTs because of using xdi-dcs (mixture of poly(vinylphenol)/poly (methylsilsesquioxane)) as the dielectric and using a single printing method. The lower voltage is a consequence of a thin dielectric layer (∼300 nm) and good uniformity in the printed CNT network. The printed CNT-TFTs show on/off ratio >10⁵, and mobility >5 cm²V^-1s^-1. Layer-by-layer deposition of CNT allows highly uniform and dense network formation, and the optimization of the xdi-dcs concentration using natural butyl alcohol provides high-yield printing of a thin dielectric layer. Collectively, this work shows the potential of using fully printed CNT-TFTs in various flexible electronic applications such as wearable sensors, actuators, artificial skin, displays and wireless tags and antennas.

Three-Layered Design of Electrothermal Actuators for Minimal Voltage Operation

By designing an actuator composed of thin layers with different coefficients of thermal expansion (CTE) together with an electrically conductive layer, the CTE mismatch can be utilized to produce soft electrothermal actuators (ETAs). These actuators have been typically implemented using only two layers, commonly relying on Timoshenko's analytic model that correlates the temperature to the actuator's curvature. In this study, we extend the analytic model to include the thermoelectric relation present in ETAs, that is, the conductive layer's properties with respect to the operation temperature. By applying the thermoelectric relation, a minimal voltage optimization can be applied to the analytic model. Using dimensionless analysis, we optimize the ETAs performance for both bi- and tri-layer ETAs with and without the thermal modeling. The bi-layer optimization not only predicts the maximal value for the bi-layer performance but also provides the optimal thickness of each layer for any couple of materials. We validate the tri-layer analytic model experimentally by measuring the curvature for different third layer thicknesses. Finally, we optimize the tri-layer design based on the analytic model, which can achieve an improvement in curvature per voltage of >3000% over the optimal bi-layer ETA.

Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the printed 2D material TFTs. In the search for TFTs with high current ratios, we introduce a stable and efficient method of nitrogen-doped graphene (NDG) ink preparation for inkjet printing by liquid-phase exfoliation. The NDG thin film is print-stacked with molybdenum disulfide (MoS₂) by multiple printing passes to construct a MoS₂–NDG stack. We demonstrate top-gated fully inkjet-printed MoS₂–NDG transistors with silver drain, source, and gate electrodes, and a barium titanate (BaTiO₃) dielectric. A 100% inkjet-printed MoS₂–NDG vertical 2D active heterostructure layer transistor with a current on/off ratio of 1200 is exhibited. The results may lead towards the development of all-printed 2D material-based transistor switches.

Recent Developments of Flexible and Stretchable Electrochemical Biosensors

The skyrocketing popularity of health monitoring has spurred increasing interest in wearable electrochemical biosensors. Compared with the traditionally rigid and bulky electrochemical biosensors, flexible and stretchable devices render a unique capability to conform to the complex, hierarchically textured surfaces of the human body. With a recognition element (e.g., enzymes, antibodies, nucleic acids, ions) to selectively react with the target analyte, wearable electrochemical biosensors can convert the types and concentrations of chemical changes in the body into electrical signals for easy readout. Initial exploration of wearable electrochemical biosensors integrates electrodes on textile and flexible thin-film substrate materials. A stretchable property is needed for the thin-film device to form an intimate contact with the textured skin surface and to deform with various natural skin motions. Thus, stretchable materials and structures have been exploited to ensure the effective function of a wearable electrochemical biosensor. In this mini-review, we summarize the recent development of flexible and stretchable electrochemical biosensors, including their principles, representative application scenarios (e.g., saliva, tear, sweat, and interstitial fluid), and materials and structures. While great strides have been made in the wearable electrochemical biosensors, challenges still exist, which represents a small fraction of opportunities for the future development of this burgeoning field.

Probing Mobile Charge Carriers in Semiconducting Carbon Nanotube Networks by Charge Modulation Spectroscopy

Solution-processed networks of semiconducting, single-walled carbon nanotubes (SWCNTs) have attracted considerable attention as materials for next-generation electronic devices and circuits. However, the impact of the SWCNT network composition on charge transport on a microscopic level remains an open and complex question. Here, we use charge-modulated absorption and photoluminescence spectroscopy to probe exclusively the mobile charge carriers in monochiral (6,5) and mixed SWCNT network field-effect transistors. Ground-state bleaching and charge-induced trion absorption features as well as exciton quenching are observed depending on applied voltage and modulation frequency. Through correlation of the modulated mobile carrier density and the optical response of the nanotubes, we find that charge transport in mixed SWCNT networks depends strongly on the diameter and thus bandgap of the individual species. Mobile charges are preferentially transported by small bandgap SWCNTs especially at low gate voltages, whereas large bandgap species only start to participate at higher carrier concentrations. Our results demonstrate the excellent suitability of modulation spectroscopy to investigate charge transport in nanotube network transistors and highlight the importance of SWCNT network composition for their performance.

Voltage-Tunable Dual Image of Electrostatic Force-Assisted Dispensing Printed, Tungsten Trioxide-Based Electrochromic Devices with a Symmetric Configuration

Electrostatic force-assisted dispensing (EFAD)-printed tungsten trioxide (WO₃)-based electrochromic devices (ECDs) displaying a dual image depending on the applied voltage are demonstrated. We first print WO₃ via EFAD printing, in which the width of the printed lines can be tuned by adjusting the printing speed. The performance of the ECDs is characterized while varying the thickness of the printed WO₃ film. It is determined that ∼550 nm thick WO₃ is the optimal film considering maximum transmittance contrast (ΔT_max), device dynamic responses, efficiency, and long-term coloration/bleaching cyclic stability. More significantly, the coloration of the devices in this work can alternatively appear due to the use of electrolyte-soluble anodic species (here, dimethyl ferrocene, dmFc), for which WO₃ films should be deposited on both electrodes and a part of the electrodes should be exposed to the electrolyte for the oxidation of dmFc. To take advantage of such features of the devices, we successfully demonstrate EFAD-printed, flexible WO₃ ECDs alternately displaying a dual image, which is expected to have high potential as a functional component of printed electronics.

Overcoming Electrochemical Instabilities of Printed Silver Electrodes in All-Printed Ion Gel Gated Carbon Nanotube Thin-Film Transistors

Silver ink is the most widely used conductive material for printing electrodes in the fabrication of all-printed ion gel gated transistors because of their high conductivity and low cost. However, electrochemical instability of printed silver electrodes is generally one of the biggest issues, whether it is in air where silver gets oxidized or in a moisture environment where electrochemical migration occurs. Notwithstanding, the electrochemical stability of printed silver electrodes in ion gel medium has not been studied so far. In this work, we studied the electrochemical instabilities of printed silver electrodes in fully printed ion gel gated single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) and developed some strategies to overcome these issues. All-printed ion gel-based p-type SWCNT TFTs were employed to investigate the impact of electrochemical instabilities on the electrical behavior of printed SWCNT TFTs. The results have demonstrated that printed silver was unstable at anodic and cathodic polarization because of the corrosion by the ionic liquid. Besides, anodic corrosion of silver source/drain electrodes was shown to be responsible for the electrical failure of printed SWCNT TFTs in both the linear and saturated regime. These issues were completely resolved when preventing printed silver electrodes from coming into direct contact with ion gels. For example, ion gels were partially printed in device channels to avoid contacting the printed silver source and drain electrodes. At the same time, silver side-gate electrodes were replaced by inkjet-printed PEDOT:PSS electrodes to avoid gate electrode-related instabilities. Consequently, all-printed electrochemically stable SWCNT TFTs fabricated were obtained with enhanced performance of higher I_ON/I_OFF ratios (10⁵ to 10⁶), smaller subthreshold slopes (∼70 mV/dec), and smaller hysteresis (ΔV = 0.025 V) at gate voltages from 1.2 to -0.5 V. Additionally, the polarity of all-printed SWCNT TFTs was converted from the p-channel to ambipolar while achieving lower leakage currents.

Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing

Semiconducting carbon nanotubes (CNTs) printed into thin films offer high electrical performance, significant mechanical stability, and compatibility with low-temperature processing. Yet, the implementation of low-temperature printed devices, such as CNT thin-film transistors (CNT-TFTs), has been hindered by relatively high process temperature requirements imposed by other device layers-dielectrics and contacts. In this work, we overcome temperature constraints and demonstrate 1D-2D thin-film transistors (1D-2D TFTs) in a low-temperature (maximum exposure ≤80 °C) full print-in-place process (i.e., no substrate removal from printer throughout the entire process) using an aerosol jet printer. Semiconducting 1D CNT channels are used with a 2D hexagonal boron nitride (h-BN) gate dielectric and traces of silver nanowires as the conductive electrodes, all deposited using the same printer. The aerosol jet-printed 2D h-BN films were realized via proper ink formulation, such as utilizing the binder hydroxypropyl methylcellulose, which suppresses redispersion between adjacent printed layers. In addition to an ON/OFF current ratio up to 3.5 × 10⁵, channel mobility up to 10.7 cm²·V^-1·s^-1, and low gate hysteresis, 1D-2D TFTs exhibit extraordinary mechanical stability under bending due to the nanoscale network structure of each layer, with minimal changes in performance after 1000 bending test cycles at 2.1% strain. It is also confirmed that none of the device layers require high-temperature treatment to realize optimal performance. These findings provide an attractive approach toward a cost-effective, direct-write realization of electronics.

Polymer Encapsulants for Threshold Voltage Control in Carbon Nanotube Transistors

Although carbon nanotube transistors present outstanding performances based on key metrics, large-scale uniformity and repeatability required in printable electronics depend greatly on proper control of the electrostatic environment. Through a survey of polymer dielectric encapsulants compatible with printing processes, a simple correlation is found between the measured interfacial charge density and the onset of conduction in a transistor, providing a rational route to control the electrical characteristics of carbon nanotube transistors. Smooth and continuous balancing of the properties between unipolar p-type and n-type transport is achieved using a molar fraction series of poly(styrene-co-2-vinylpyridine) statistical copolymers combined with an electron-donating molecule. We further demonstrate the easy fabrication of a p-n diode which shows a modest rectification of 8:1.

Ultralow-voltage all-carbon low-dimensional-material flexible transistors integrated by room-temperature photolithography incorporated filtration

Low dimensional materials (LDMs) have drawn world-wide attention as potential candidates applied in flexible and wearable electronics. It is an attractive research topic to systematically integrate all-LDMs to realize flexible electronics. However, it is difficult to pattern LDMs by conventional photolithography and plasma etching without harming the other overlapped analogous components. Here, we propose and realize independent-operation all-LDM flexible transistors integrated into a 2-inch substrate using the proposed photolithography incorporated filtration (PIF) platform. The transistors consisting of only one-dimensional carbon nanotubes and two-dimensional graphene oxide show an ultralow operating voltage of less than -1 V, an extraordinary subthreshold swing (SS) of 170 mV dec-1, a low threshold voltage (Vth) of -0.3 V and a high carrier mobility up to 105 cm2 V-1 s-1. Moreover, the device shows a small bending radius of 1 mm and a transistor transparency of 94%. The full room-temperature process further demonstrates the great potential of applying the proposed devices and the PIF platform to future high-performance flexible transparent electronics. This work provides a novel route to tackle the difficulty in integrating solution processed LDMs.

Simple Method to Improve Electrical Conductivity of Films Made from Single-Walled Carbon Nanotubes

Despite the widespread use of sonication for individualization of nanomaterials, its destructive nature is rarely acknowledged. In this study, we demonstrated how exposure of the material to a hostile sound wave environment can be limited by the application of another preprocessing step. Single-walled carbon nanotubes (CNTs) were initially ground in a household coffee grinder, which enabled facile deagglomeration thereof. Such a simple approach enabled us to obtain high-quality CNT dispersion at reduced sonication time. Most importantly, electrical conductivity of free-standing films prepared from these dispersion was improved almost fourfold as compared with unground material eventually reaching 1067 ± 34 S/cm. This work presents a new approach as to how electrical properties of nanocarbon ensembles may be enhanced without the application of doping agents, the presence of which is often ephemeral.

Mechanically Tunable Single-Walled Carbon Nanotube Films as a Universal Material for Transparent and Stretchable Electronics

Soft, flexible, and stretchable electronic devices provide novel integration opportunities for wearable and implantable technologies. Despite the existing efforts to endow electronics with the capability of large deformation, the main technological challenge is still in the absence of suitable materials for the manufacturing of stretchable electronic circuits and devices with active (sensitive) and passive (stable) components. Here, we present a universal material, based on single-walled carbon nanotube (SWCNT) films deposited on a polydimethylsiloxane (PDMS) substrate, which can act as a material being both sensitive and insensitive to strain. The diverse performance of SWCNT/PDMS structures was achieved by two simple dry-transfer fabrication approaches: SWCNT film deposition onto the as-prepared PDMS and on the prestretched PDMS surface. The correlation between applied strain, microstructural evolution, and electro-optical properties is discussed on the basis of both experimental and computational results. The SWCNT/PDMS material with the mechanically tunable performance has a small relative resistance change from 0.05 to 0.07, while being stretched from 10 to 40% (stable electrode applications). A high sensitivity of 20.1 of the SWCNT/PDMS structures at a 100% strain was achieved (strain sensing applications). Our SWCNT/PDMS structures have superior transparency and conductivity compared to the ones reported previously, including the SWCNT/PDMS structures, obtained by wet processes.

Dynamic Interface Pressure Monitoring System for the Morphological Pressure Mapping of Intermittent Pneumatic Compression Therapy

Intermittent pneumatic compression (IPC) is a proactive compression therapeutic technique in the prophylaxis of deep vein thrombosis, reduction of limb edema, and treatment of chronic venous ulcers. To appropriately detect and analyze biomechanical pressure profiles delivered by IPC in treatment, a dynamic interface pressure monitoring system was developed to visualize and quantify morphological pressure mapping in the spatial and temporal domains in real time. The system comprises matrix soft sensors, a smart IPC device, a monitoring and analysis software, and a display unit. The developed soft sensor fabricated by an advanced screen printing technology was used to detect intermitted pressure by an IPC device. The pneumatic pressure signals inside the bladders of the IPC were also transiently collected by a data acquisition system and then transmitted to the computer through Bluetooth. The experimental results reveal that the developed pressure monitoring system can perform the real-time detection of dynamic pressures by IPC and display the morphological pressure mapping multi-dimensionally. This new system provides a novel modality to assist in the effective evaluation of proactive compression therapy in practice. The study results contribute to understanding the working mechanisms of IPC and improving its functional design based on intuitive biomechanical characteristics of compression delivery profiles.

Inkjet-printed stretchable and low voltage synaptic transistor array

Wearable and skin electronics benefit from mechanically soft and stretchable materials to conform to curved and dynamic surfaces, thereby enabling seamless integration with the human body. However, such materials are challenging to process using traditional microelectronics techniques. Here, stretchable transistor arrays are patterned exclusively from solution by inkjet printing of polymers and carbon nanotubes. The additive, non-contact and maskless nature of inkjet printing provides a simple, inexpensive and scalable route for stacking and patterning these chemically-sensitive materials over large areas. The transistors, which are stable at ambient conditions, display mobilities as high as 30 cm² V⁻¹ s⁻¹ and currents per channel width of 0.2 mA cm⁻¹ at operation voltages as low as 1 V, owing to the ionic character of their printed gate dielectric. Furthermore, these transistors with double-layer capacitive dielectric can mimic the synaptic behavior of neurons, making them interesting for conformal brain-machine interfaces and other wearable bioelectronics.

The development of novel low-cost fabrication schemes for realizing stretchable transistor arrays with applicability in wearable electronics remains a challenge. Here, the authors report skin-like electronics with stretchable active materials and devices processed exclusively from ink-jet printing.

Calcium Gluconate Derived Carbon Nanosheet Intrinsically Decorated with Nanopapillae for Multifunctional Printed Flexible Electronics

With the blooming of wearable technology, developing active materials that can be printed on a large scale has been attracting great attention. Particularly, there are abundant genius structure designs in nature that are endowed with superior performance, inspiring the design of materials for high-performance wearables. Herein, we report the controllable preparation of bionic carbon nanosheets decorated with in situ formed nanoparticles (NP-CNS) through the pyrolysis of calcium gluconate (CG), which are further used for printing high-performance humidity/pressure/strain sensors. The transformation from CG to NP-CNS had been studied in detail. Interestingly, papillae-like CaO NPs are formed on the carbon nanosheets, endowing NP-CNS with good dispersion in inks and rapid response to external stimuli. Particularly, the printed humidity sensor possesses a fast response time (1.7 s) and a broad detection range (0-96% RH), increasing from the high hydroscopicity of the CaO NPs and the thus induced expansion of the NP-CNS. Besides, the strain sensor and pressure sensor also show high sensitivity and broad detection range, which is derived from the unique bionic structure of the NP-CNS. We further showed their excellent performance in monitoring of pulse wave, breath, and human motion, indicating the wide potential applications of the bionic NP-CNS in smart wearables.