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Ali MSMM, Nguyen H, Paci JT, Zhang Y, Espinosa HD. Thermomechanical Properties of Transition Metal Dichalcogenides Predicted by a Machine Learning Parameterized Force Field. NANO LETTERS 2024; 24:8465-8471. [PMID: 38976772 DOI: 10.1021/acs.nanolett.4c00285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/10/2024]
Abstract
The mechanical and thermal properties of transition metal dichalcogenides (TMDs) are directly relevant to their applications in electronics, thermoelectric devices, and heat management systems. In this study, we use a machine learning (ML) approach to parametrize molecular dynamics (MD) force fields to predict the mechanical and thermal transport properties of a library of monolayered TMDs (MoS2, MoTe2, WSe2, WS2, and ReS2). The ML-trained force fields were then employed in equilibrium MD simulations to calculate the lattice thermal conductivities of the foregoing TMDs and to investigate how they are affected by small and large mechanical strains. Furthermore, using nonequilibrium MD, we studied thermal transport across grain boundaries. The presented approach provides a fast albeit accurate methodology to compute both mechanical and thermal properties of TMDs, especially for relatively large systems and spatially complex structures, where density functional theory computational cost is prohibitive.
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Affiliation(s)
- Mohamed S M M Ali
- Department of Mechanical Engineering, Northwestern University, 2145 Sheridan Rd., Evanston, Illinois 60208, United States
| | - Hoang Nguyen
- Theoretical and Applied Mechanics Program, Northwestern University, 2145 Sheridan Rd., Evanston, Illinois 60208, United States
| | - Jeffrey T Paci
- Department of Chemistry, University of Victoria, Victoria, British Columbia V8W 3V6, Canada
| | - Yue Zhang
- Department of Mechanical Engineering, Northwestern University, 2145 Sheridan Rd., Evanston, Illinois 60208, United States
| | - Horacio D Espinosa
- Department of Mechanical Engineering, Northwestern University, 2145 Sheridan Rd., Evanston, Illinois 60208, United States
- Theoretical and Applied Mechanics Program, Northwestern University, 2145 Sheridan Rd., Evanston, Illinois 60208, United States
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2
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Hussain SA, Zheng B, Xu Z, Liu Y, Wang H, Sun X, Zhu C, Wu G, Zheng W, Zhu X, Li D, Jiang Y, Pan A. Enhancing photoluminescence of WSe 2 in vapor grown WSe 2/VOCl bilayer heterojunctions via surface passivation. OPTICS LETTERS 2024; 49:3970-3973. [PMID: 39008753 DOI: 10.1364/ol.529048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2024] [Accepted: 06/22/2024] [Indexed: 07/17/2024]
Abstract
Monolayer tungsten selenide (WSe2) has attracted attention due to its direct bandgap-generated strong light emission and light-matter interaction. Herein, vertical WSe2/VOCl bilayer heterojunctions with enhanced PL of WSe2 were synthesized by the vapor growth method. The morphology, crystal structure, and chemical composition of the WSe2/VOCl heterojunctions were systematically investigated, which confirmed the successful formation of the heterojunctions. The PL emission intensity of WSe2 obtained from the WSe2/VOCl heterojunction was about 2.4 times higher than that of the WSe2 monolayer, demonstrating the high optical quality of the WSe2/VOCl heterojunction, which was further confirmed by time-resolved PL measurements. The insulator top VOCl, which was deposited on the surface of the semiconductor bottom WSe2 as a surface passivation material, reducing the impurities and resulting in an atomically clean surface, successfully enhanced the PL emission of the bottom WSe2. This vertical WSe2/VOCl bilayer heterojunction with PL enhancement could provide a promising platform for optical devices.
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Gautam S, Chugh S, Gates BD. Electrodeposition of PdPt Nanoparticles on Edges and S-Vacancies in Exfoliated MoS 2 Nanosheets for Enhanced Hydrogen Evolution Activity. CHEMSUSCHEM 2024; 17:e202301922. [PMID: 38381851 DOI: 10.1002/cssc.202301922] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Revised: 02/20/2024] [Accepted: 02/21/2024] [Indexed: 02/23/2024]
Abstract
Deposition of metal nanoparticles onto the molybdenum disulfide (MoS2) nanosheets is an efficient method to tune the electronic structure of the MoS2 and maximize its catalytic performance towards the hydrogen evolution reaction (HER). Herein, we report the electrodeposition of Pd and Pt nanoparticles onto desulfurized MoS2 nanosheets (MoS2-x) to achieve an improved HER activity in an acidic electrolyte. The initial MoS2 powder was exfoliated and isolated through centrifugation, followed by electrochemical desulfurization to create defect sites. Subsequently, Pt and Pd nanoparticles were electrodeposited onto the S-vacancies of MoS2-x nanosheets. The resulting PdPt nanoparticles, with a diameter of 3.3 ±1.7 nm, were distributed across the surfaces of the nanosheets. A preferential deposition was evident at the edges of the nanosheets, particularly when Pd was deposited first followed by Pt. Owing to this preferential deposition of Pd and Pt and the synergistic interaction of MoS2-x with Pd and Pt, the prepared catalyst exhibited a low overpotential of 30 mV at 10 mA cm-2, which is 2.7× lower than the MoS2-x alone. The prepared catalyst exhibited a 1.7× increase in the mass activity at 20 mV overpotential, relative to that of a commercial Pt/C nanocatalyst, showcasing its promising potential as an alternative catalyst.
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Affiliation(s)
- Sakshi Gautam
- Department of Chemistry, Simon Fraser University, 8888 University Drive, Burnaby, BC V5A 1S6, Canada
- Alternate Energy Department, Indian Oil R&D, Sector-13, Faridabad, 121007, India
| | - Sachin Chugh
- Alternate Energy Department, Indian Oil R&D, Sector-13, Faridabad, 121007, India
| | - Byron D Gates
- Department of Chemistry, Simon Fraser University, 8888 University Drive, Burnaby, BC V5A 1S6, Canada
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Rasritat A, Tapakidareekul M, Saego K, Meevasana W, Sangtawesin S. Formation of oxygen protective layer on monolayer MoS 2 via low energy electron irradiation. RSC Adv 2024; 14:21999-22005. [PMID: 38993507 PMCID: PMC11238566 DOI: 10.1039/d4ra03362k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2024] [Accepted: 06/27/2024] [Indexed: 07/13/2024] Open
Abstract
Monolayer molybdenum disulfide (MoS2) semiconductors are the new generation of two-dimensional materials that possess several advantages compared to graphene due to their tunable bandgap and high electron mobility. Several approaches have been used to modify their physical properties for optical device applications. Here, we report a facile and non-destructive surface modification method for monolayer MoS2 via electron irradiation at a low, 5 kV accelerating voltage. After electron irradiation, the results of Raman and photoluminescence spectroscopy confirmed that the structure remains unchanged. However, when the modified surface was illuminated with a 532 nm laser for a prolonged period, the PL intensity was quenched as a result of oxygen desorption. Interestingly, the PL intensity can be recovered when left in ambient conditions for 10 h. The analysis of the PL spectrum revealed a decrease of trion, which is consistent with the readsorbed O2 molecules on the surface that deplete electrons and lead to PL recovery. We attribute this effect to the enhancement of the n-type character of monolayer MoS2 after electron irradiation. The sensitive nature of the modified surface to oxygen suggests that this approach may be used as a tool for the fabrication of MoS2 oxygen sensors.
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Affiliation(s)
- Aissara Rasritat
- School of Physics, Suranaree University of Technology Nakhon Ratchasima 30000 Thailand
| | | | - Kritsana Saego
- School of Physics, Suranaree University of Technology Nakhon Ratchasima 30000 Thailand
| | - Worawat Meevasana
- School of Physics, Suranaree University of Technology Nakhon Ratchasima 30000 Thailand
| | - Sorawis Sangtawesin
- School of Physics, Suranaree University of Technology Nakhon Ratchasima 30000 Thailand
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Huo Y, Qiu L, Wang T, Yu H, Yang W, Dong X, Yang Y. P-N Heterojunction formation: Metal Sulfide@Metal Oxide Chemiresistor for ppb H 2S Detection from Exhaled Breath and Food Spoilage at Flexible Room Temperature. ACS Sens 2024; 9:3433-3443. [PMID: 38872232 DOI: 10.1021/acssensors.4c00866] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
The development of a portable, low-cost sensor capable of accurately detecting H2S gas in exhaled human breath at room temperature is highly anticipated in the fields of human health assessment and food spoilage evaluation. However, achieving outstanding gas sensing performance and applicability for flexible room-temperature operation with parts per billion H2S gas sensors still poses technical challenges. To address this issue, this study involves the in situ growth of MoS2 nanosheets on the surface of In2O3 fibers to construct a p-n heterojunction. The In2O3@MoS2-2 sensor exhibits a high response of 460.61 to 50 ppm of H2S gas at room temperature, which is 19.5 times higher than that of the pure In2O3 sensor and 322.1 times higher than that of pure MoS2. The In2O3@MoS2-2 also demonstrates a minimum detection limit of 3 ppb and maintains a stable response to H2S gas even after being bent 50 times at a 60° angle. These exceptional gas sensing properties are attributed to the increase in oxygen vacancies and chemisorbed oxygen on In2O3@MoS2-2 nanofibers as well as the formation of the p-n heterojunction, which modulates the heterojunction barrier. Furthermore, in this study, we successfully applied the In2O3@MoS2-2 sensor for oral disease and detection of food spoilage conditions, thereby providing new design insights for the development of portable exhaled gas sensors and gas sensors for evaluating food spoilage conditions at room temperature.
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Affiliation(s)
- Yangyang Huo
- Key Laboratory of Applied Chemistry and Nanotechnology at University of Jilin Province, Changchun University of Science and Technology, Changchun 130022, China
| | - Limin Qiu
- Key Laboratory of Applied Chemistry and Nanotechnology at University of Jilin Province, Changchun University of Science and Technology, Changchun 130022, China
| | - Tianqi Wang
- Key Laboratory of Applied Chemistry and Nanotechnology at University of Jilin Province, Changchun University of Science and Technology, Changchun 130022, China
| | - Hui Yu
- Key Laboratory of Applied Chemistry and Nanotechnology at University of Jilin Province, Changchun University of Science and Technology, Changchun 130022, China
| | - Wenyuan Yang
- Key Laboratory of Applied Chemistry and Nanotechnology at University of Jilin Province, Changchun University of Science and Technology, Changchun 130022, China
| | - Xiangting Dong
- Key Laboratory of Applied Chemistry and Nanotechnology at University of Jilin Province, Changchun University of Science and Technology, Changchun 130022, China
| | - Ying Yang
- Key Laboratory of Applied Chemistry and Nanotechnology at University of Jilin Province, Changchun University of Science and Technology, Changchun 130022, China
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Pradhan A, Alboteanu G, Ya'akobovitz A, Niv A. Toward Monolayered Solar Cells: Luminescence Properties and Light Soaking in TMDs. ACS APPLIED MATERIALS & INTERFACES 2024; 16:28435-28440. [PMID: 38768216 DOI: 10.1021/acsami.4c02368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
The optical and photonic characteristics of monolayer transition metal dichalcogenides (TMDs) play a pivotal role in their functionality as solar cell materials, light-emitting diodes (LEDs), and other electro-optical applications. In this study, we reveal the impact of prolonged illumination on the luminescence properties and Raman spectra of monolayered MoS2 and WS2─a process known as "light soaking". We find a light-induced transition from the physisorption to the chemisorption of ambient O2 and H2O molecules. In parallel, we observe the activation and passivation of defect sites in the samples (depending on their initial defect density), which is attributed to the adsorbed ambient molecules and the resulting light-driven interactions with defect sites. Thus, we can control the active defect density of monolayered TMDs and shed light on the fundamental mechanisms underlying their luminescence properties. Therefore, this work clarifies the source of changes to the luminescence properties of TMDs and opens the path toward their integration into advanced applications that may be affected by light soaking, such as solar cells and energy devices.
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Affiliation(s)
- Anway Pradhan
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev, Beer-Sheva, 8499000, Israel
| | - Guy Alboteanu
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev, Beer-Sheva, 8499000, Israel
| | - Assaf Ya'akobovitz
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev, Beer-Sheva, 8499000, Israel
| | - Avi Niv
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev, Beer-Sheva, 8499000, Israel
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Jung J, Choi H, Lee Y, Kim Y, Taniguchi T, Watanabe K, Choi M, Jang JH, Chung H, Kim D, Kim Y, Cho C. Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules via h-BN Encapsulations. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2310197. [PMID: 38493313 PMCID: PMC11165525 DOI: 10.1002/advs.202310197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 02/25/2024] [Indexed: 03/18/2024]
Abstract
Hexagonal boron nitride (h-BN) is a key ingredient for various 2D van der Waals heterostructure devices, but the exact role of h-BN encapsulation in relation to the internal defects of 2D semiconductors remains unclear. Here, it is reported that h-BN encapsulation greatly removes the defect-related gap states by stabilizing the chemisorbed oxygen molecules onto the defects of monolayer WS2 crystals. Electron energy loss spectroscopy (EELS) combined with theoretical analysis clearly confirms that the oxygen molecules are chemisorbed onto the defects of WS2 crystals and are fixated by h-BN encapsulation, with excluding a possibility of oxygen molecules trapped in bubbles or wrinkles formed at the interface between WS2 and h-BN. Optical spectroscopic studies show that h-BN encapsulation prevents the desorption of oxygen molecules over various excitation and ambient conditions, resulting in a greatly lowered and stabilized free electron density in monolayer WS2 crystals. This suppresses the exciton annihilation processes by two orders of magnitude compared to that of bare WS2. Furthermore, the valley polarization becomes robust against the various excitation and ambient conditions in the h-BN encapsulated WS2 crystals.
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Affiliation(s)
- Jin‐Woo Jung
- Department of Physics and ChemistryDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988South Korea
| | - Hyeon‐Seo Choi
- Department of Physics and ChemistryDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988South Korea
| | - Young‐Jun Lee
- Department of Physics and ChemistryDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988South Korea
| | - Youngjae Kim
- School of PhysicsKorea Institute for Advanced Study (KIAS)Seoul02455South Korea
| | - Takashi Taniguchi
- International Center for Materials NanoarchitectonicsNational Institute for Materials ScienceTsukuba305‐0044Japan
| | - Kenji Watanabe
- Research Center for Functional MaterialsNational Institute for Materials ScienceTsukuba305‐0044Japan
| | - Min‐Yeong Choi
- Electron Microscopy and Spectroscopy TeamKorea Basic Science InstituteDaejeon34133South Korea
| | - Jae Hyuck Jang
- Electron Microscopy and Spectroscopy TeamKorea Basic Science InstituteDaejeon34133South Korea
- Graduate School of Analytic Science and TechnologyChungnam National UniversityDaejeon34134South Korea
| | - Hee‐Suk Chung
- Electron Microscopy and Spectroscopy TeamKorea Basic Science InstituteDaejeon34133South Korea
| | - Dohun Kim
- Department of Physics and ChemistryDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988South Korea
| | - Youngwook Kim
- Department of Physics and ChemistryDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988South Korea
| | - Chang‐Hee Cho
- Department of Physics and ChemistryDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988South Korea
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8
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Li Z, Bretscher H, Rao A. Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications. NANOSCALE 2024; 16:9728-9741. [PMID: 38700268 DOI: 10.1039/d3nr06296a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.
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Affiliation(s)
- Zhaojun Li
- Solid State Physics, Department of Materials Science and Engineering, Uppsala University, 75103 Uppsala, Sweden.
| | - Hope Bretscher
- The Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, CB3 0HE, Cambridge, UK
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Rani S, Das S, Siddiqui SA, Jain A, Rani D, Pahuja M, Chaudhary N, Afshan M, Ghosh R, Swadia D, Riyajuddin SK, Bera C, Ghosh K. Harnessing Environmental Sensitivity in SnSe-Based Metal-Semiconductor-Metal Devices: Unveiling Negative Photoconductivity for Enhanced Photodetector Performance and Humidity Sensing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:26899-26914. [PMID: 38741334 DOI: 10.1021/acsami.4c02539] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The extreme sensitivity of 2D-layered materials to environmental adsorbates, which is typically seen as a challenge, is harnessed in this study to fine-tune the material properties. This work investigates the impact of environmental adsorbates on electrical properties by studying metal-semiconductor-metal (MSM) devices fabricated on CVD-synthesized SnSe flakes. The freshly prepared devices exhibit positive photoconductivity (PPC), whereas they gradually develop negative photoconductivity (NPC) after being exposed to an ambient environment for ∼1 day. While the photodetectors based on positive photoconductivity exhibit a responsivity and detectivity of 6.1 A/W and 5.06 × 108 Jones, the same for the negative photoconductivity-based photodetector reaches up to 36.3 A/W and 1.49 × 109 Jones, respectively. In addition, the noise-equivalent power of the NPC photodetector decreases by 300 times as compared to the PPC device, which implies a prominent detection capability of the NPC device against weak photo signals. To substantiate the hypothesis that negative photoconductivity stems from the photodesorption of water and oxygen molecules on the dangling bonds of SnSe flakes, the flakes are etched along the most active planes (010) with a focused laser beam in an inert environment, which enhances responsivity by 43%, supporting negative photoconductivity linked to photodesorption. Furthermore, the humidity-dependent dark current variation of the NPC photodetectors is used to design a humidity sensor for human respiration monitoring with faster response and recovery times of 0.72 and 0.68 s, respectively. These findings open up the possibility of tuning the photoelectrical response of layered materials in a facile manner to develop future sensors and optoelectronic multifunctional devices.
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Affiliation(s)
- Seema Rani
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Subhabrata Das
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Shumile Ahmed Siddiqui
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Ayushi Jain
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Daya Rani
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Mansi Pahuja
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Nikita Chaudhary
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Mohd Afshan
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Rishita Ghosh
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Devansh Swadia
- Indian Institute of Science Education and Research Mohali, Knowledge City-Sector 81, Mohali 140306, India
| | - S K Riyajuddin
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Chandan Bera
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Kaushik Ghosh
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
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Yoon H, Lee S, Seo J, Sohn I, Jun S, Hong S, Im S, Nam Y, Kim HJ, Lee Y, Chung SM, Kim H. Investigation on Contact Properties of 2D van der Waals Semimetallic 1T-TiS 2/MoS 2 Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2024; 16:12095-12105. [PMID: 38384197 DOI: 10.1021/acsami.3c18982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDCs) are considered promising alternatives to Si as channel materials because of the possibility of retaining their superior electronic transport properties even at atomic body thicknesses. However, the realization of high-performance 2D TMDC field-effect transistors remains a challenge owing to Fermi-level pinning (FLP) caused by gap states and the inherent high Schottky barrier height (SBH) within the metal contact and channel layer. This study demonstrates that high-quality van der Waals (vdW) heterojunction-based contacts can be formed by depositing semimetallic TiS2 onto monolayer (ML) MoS2. After confirming the successful formation of a TiS2/ML MoS2 heterojunction, the contact properties of vdW semimetal TiS2 were thoroughly investigated. With clean interfaces of the TiS2/ML MoS2 heterojunctions, atomic-layer-deposited TiS2 can induce gap-state saturation and suppress FLP. Consequently, compared with conventional evaporated metal electrodes, the TiS2/ML MoS2 heterojunctions exhibit a lower SBH of 8.54 meV and better contact properties. This, in turn, substantially improves the overall performance of the device, including its on-current, subthreshold swing, and threshold voltage. Furthermore, we believe that our proposed strategy for vdW-based contact formation will contribute to the development of 2D materials used in next-generation electronics.
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Affiliation(s)
- Hwi Yoon
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Sangyoon Lee
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jeongwoo Seo
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Inkyu Sohn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Sukhwan Jun
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Sungjae Hong
- van der Waals Materials Research Center, Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Seongil Im
- van der Waals Materials Research Center, Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Yunyong Nam
- Samsung Display Co., Ltd, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Hyung-Jun Kim
- Samsung Display Co., Ltd, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Yujin Lee
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
| | - Seung-Min Chung
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Hyungjun Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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Ryu H, Hong SC, Kim K, Jung Y, Lee Y, Lee K, Kim Y, Kim H, Watanabe K, Taniguchi T, Kim J, Kim K, Cheong H, Lee GH. Optical grade transformation of monolayer transition metal dichalcogenides via encapsulation annealing. NANOSCALE 2024. [PMID: 38439548 DOI: 10.1039/d3nr06641j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2024]
Abstract
Monolayer transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for optoelectronic applications due to their direct band gap and strong light-matter interactions. However, exfoliated TMDs have demonstrated optical characteristics that fall short of expectations, primarily because of significant defects and associated doping in the synthesized TMD crystals. Here, we report the improvement of optical properties in monolayer TMDs of MoS2, MoSe2, WS2, and WSe2, by hBN-encapsulation annealing. Monolayer WSe2 showed 2000% enhanced photoluminescence quantum yield (PLQY) and 1000% increased lifetime after encapsulation annealing at 1000 °C, which are attributed to dominant radiative recombination of excitons through dedoping of monolayer TMDs. Furthermore, after encapsulation annealing, the transport characteristics of monolayer WS2 changed from n-type to ambipolar, along with an enhanced hole transport, which also support dedoping of annealed TMDs. This work provides an innovative approach to elevate the optical grade of monolayer TMDs, enabling the fabrication of high-performance optoelectronic devices.
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Affiliation(s)
- Huije Ryu
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Seong Chul Hong
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Kangwon Kim
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Yeonjoon Jung
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Yangjin Lee
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul 03722, Republic of Korea
| | - Kihyun Lee
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul 03722, Republic of Korea
| | - Youngbum Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyunjun Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul 03722, Republic of Korea
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
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Zhan W, Zhang X, Yuan Y, Weng Q, Song S, Martínez-López MDJ, Arauz-Lara JL, Jia F. Regulating Chemisorption and Electrosorption Activity for Efficient Uptake of Rare Earth Elements in Low Concentration on Oxygen-Doped Molybdenum Disulfide. ACS NANO 2024; 18:7298-7310. [PMID: 38375824 DOI: 10.1021/acsnano.4c00691] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Recovery of rare earth elements (REEs) with trace amount in environmental applications and nuclear energy is becoming an increasingly urgent issue due to their genotoxicity and important role in society. Here, highly efficient recovery of low-concentration REEs from aqueous solutions by an enhanced chemisorption and electrosorption process of oxygen-doped molybdenum disulfide (O-doped MoS2) electrodes is performed. All REEs could be extremely recovered through a chemisorption and electrosorption coupling (CEC) method, and sorption behaviors were related with their outer-shell electrons. Light, medium, and heavy ((La(III), Gd(III), and Y(III)) rare earth elements were chosen for further investigating the adsorption and recovery performances under low-concentration conditions. Recovery of REEs could approach 100% under a low initial concentration condition where different recovery behaviors occurred with variable chemisorption interactions between REEs and O-doped MoS2. Experimental and theoretical results proved that doping O in MoS2 not only reduced the transfer resistance and improved the electrical double layer thickness of ion storage but also enhanced the chemical interaction of REEs and MoS2. Various outer-shell electrons of REEs performed different surficial chemisorption interactions with exposed sulfur and oxygen atoms of O-doped MoS2. Effects of variants including environmental conditions and operating parameters, such as applied voltage, initial concentration, pH condition, and electrode distance on adsorption capacity and recovery of REEs were examined to optimize the recovery process in order to achieve an ideal selective recovery of REEs. The total desorption of REEs from the O-doped MoS2 electrode was realized within 120 min while the electrode demonstrated a good cycling performance. This work presented a prospective way in establishing a CEC process with a two-dimensional metal sulfide electrode through structure engineering for efficient recovery of REEs within a low concentration range.
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Affiliation(s)
- Weiquan Zhan
- Key Laboratory of Green Utilization of Critical Non-metallic Mineral Resources of Ministry of Education, Wuhan, Hubei 430070, People's Republic of China
- Hubei Key Laboratory of Mineral Resources Processing and Environment, Wuhan University of Technology, Wenzhi Street 34, Wuhan, Hubei 430070, People's Republic of China
- Instituto de Fisica, Universidad Autonoma de San Luis Potosi, Av. Manuel Nava 6, Zona Universitaria, C.P. 78290, San Luis Potosi, S.L.P. Mexico
| | - Xuan Zhang
- Key Laboratory of Green Utilization of Critical Non-metallic Mineral Resources of Ministry of Education, Wuhan, Hubei 430070, People's Republic of China
- Hubei Key Laboratory of Mineral Resources Processing and Environment, Wuhan University of Technology, Wenzhi Street 34, Wuhan, Hubei 430070, People's Republic of China
| | - Yuan Yuan
- Key Laboratory of Green Utilization of Critical Non-metallic Mineral Resources of Ministry of Education, Wuhan, Hubei 430070, People's Republic of China
- Hubei Key Laboratory of Mineral Resources Processing and Environment, Wuhan University of Technology, Wenzhi Street 34, Wuhan, Hubei 430070, People's Republic of China
- Doctorado Institucional de Ingeniería y Ciencia de Materiales, Universidad Autonoma de San Luis Potosi, Av. Sierra Leona 530, San Luis Potosi 78210, Mexico
| | - Qizheng Weng
- Key Laboratory of Green Utilization of Critical Non-metallic Mineral Resources of Ministry of Education, Wuhan, Hubei 430070, People's Republic of China
- Hubei Key Laboratory of Mineral Resources Processing and Environment, Wuhan University of Technology, Wenzhi Street 34, Wuhan, Hubei 430070, People's Republic of China
| | - Shaoxian Song
- Key Laboratory of Green Utilization of Critical Non-metallic Mineral Resources of Ministry of Education, Wuhan, Hubei 430070, People's Republic of China
- Hubei Key Laboratory of Mineral Resources Processing and Environment, Wuhan University of Technology, Wenzhi Street 34, Wuhan, Hubei 430070, People's Republic of China
| | - María de Jesús Martínez-López
- Universidad de la Costa, Carretera al Libramiento Paraje de Las Pulgas, C.P. 71600, Santiago Pinotepa Nacional, Distrito Jamiltepec, Mexico
| | - José Luis Arauz-Lara
- Instituto de Fisica, Universidad Autonoma de San Luis Potosi, Av. Manuel Nava 6, Zona Universitaria, C.P. 78290, San Luis Potosi, S.L.P. Mexico
| | - Feifei Jia
- Key Laboratory of Green Utilization of Critical Non-metallic Mineral Resources of Ministry of Education, Wuhan, Hubei 430070, People's Republic of China
- Hubei Key Laboratory of Mineral Resources Processing and Environment, Wuhan University of Technology, Wenzhi Street 34, Wuhan, Hubei 430070, People's Republic of China
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13
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Zhang X, Lv B, Wei H, Yan X, Peng G, Qin S. Photodegradation and van der Waals Passivation of Violet Phosphorus. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:422. [PMID: 38470753 DOI: 10.3390/nano14050422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2024] [Revised: 02/17/2024] [Accepted: 02/21/2024] [Indexed: 03/14/2024]
Abstract
Violet phosphorus (VP), a novel two-dimensional (2D) nanomaterial, boasts structural anisotropy, a tunable optical bandgap, and superior thermal stability compared with its allotropes. Its multifunctionality has sparked widespread interest in the community. Yet, the VP's air susceptibility impedes both probing its intrinsic features and device integration, thus making it of urgent significance to unveil the degradation mechanism. Herein, we conduct a comprehensive study of photoactivated degradation effects on VP. A nitrogen annealing method is presented for the effective elimination of surface adsorbates from VP, as evidenced by a giant surface-roughness improvement from 65.639 nm to 7.09 nm, enabling direct observation of the intrinsic morphology changes induced by photodegradation. Laser illumination demonstrates a significant thickness-thinning effect on VP, manifested in the remarkable morphological changes and the 73% quenching of PL intensity within 160 s, implying its great potential for the efficient selected-area etching of VP at high resolution. Furthermore, van der Waals passivation of VP using 2D hexagonal boron nitride (hBN) was achieved. The hBN-passivated channel exhibited improved surface roughness (0.512 nm), reduced photocurrent hysteresis, and lower responsivity (0.11 A/W @ 450 nm; 2 μW), effectively excluding adsorbate-induced electrical and optoelectrical effects while disabling photodegradation. Based on our experimental results, we conclude that three possible factors contribute to the photodegradation of VP: illumination with photon energy higher than the bandgap, adsorbed H2O, and adsorbed O2.
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Affiliation(s)
- Xiangzhe Zhang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Bowen Lv
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Haitao Wei
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Xingheng Yan
- College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, China
| | - Gang Peng
- College of Science, National University of Defense Technology, Changsha 410073, China
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
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14
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Hossen MF, Shendokar S, Aravamudhan S. Defects and Defect Engineering of Two-Dimensional Transition Metal Dichalcogenide (2D TMDC) Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:410. [PMID: 38470741 DOI: 10.3390/nano14050410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/04/2024] [Accepted: 02/18/2024] [Indexed: 03/14/2024]
Abstract
As layered materials, transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials. Interestingly, the characteristics of these materials are transformed from bulk to monolayer. The atomically thin TMDC materials can be a good alternative to group III-V and graphene because of their emerging tunable electrical, optical, and magnetic properties. Although 2D monolayers from natural TMDC materials exhibit the purest form, they have intrinsic defects that limit their application. However, the synthesis of TMDC materials using the existing fabrication tools and techniques is also not immune to defects. Additionally, it is difficult to synthesize wafer-scale TMDC materials for a multitude of factors influencing grain growth mechanisms. While defect engineering techniques may reduce the percentage of defects, the available methods have constraints for healing defects at the desired level. Thus, this holistic review of 2D TMDC materials encapsulates the fundamental structure of TMDC materials, including different types of defects, named zero-dimensional (0D), one-dimensional (1D), and two-dimensional (2D). Moreover, the existing defect engineering methods that relate to both formation of and reduction in defects have been discussed. Finally, an attempt has been made to correlate the impact of defects and the properties of these TMDC materials.
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Affiliation(s)
- Moha Feroz Hossen
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
| | - Sachin Shendokar
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
| | - Shyam Aravamudhan
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
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15
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Lasseter J, Gellerup S, Ghosh S, Yun SJ, Vasudevan R, Unocic RR, Olunloyo O, Retterer ST, Xiao K, Randolph SJ, Rack PD. Selected Area Manipulation of MoS 2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9144-9154. [PMID: 38346142 DOI: 10.1021/acsami.3c17182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
We demonstrate direct-write patterning of single and multilayer MoS2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF2 precursor. MoS2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source-drain current at constant gate and source-drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS2 devices.
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Affiliation(s)
- John Lasseter
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Spencer Gellerup
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Sujoy Ghosh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Seok Joon Yun
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Rama Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Olugbenga Olunloyo
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Scott T Retterer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Steven J Randolph
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
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16
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Tian S, Sun D, Chen F, Wang H, Li C, Yin C. Recent progress in plasma modification of 2D metal chalcogenides for electronic devices and optoelectronic devices. NANOSCALE 2024; 16:1577-1599. [PMID: 38173407 DOI: 10.1039/d3nr05618j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Two-dimensional metal chalcogenides (2D MCs) present a great opportunity for overcoming the size limitation of traditional silicon-based complementary metal-oxide-semiconductor (CMOS) devices. Controllable modulation compatible with CMOS processes is essential for the improvement of performance and the large-scale applications of 2D MCs. In this review, we summarize the recent progress in plasma modification of 2D MCs, including substitutional doping, defect engineering, surface charge transfer, interlayer coupling modulation, thickness control, and nano-array pattern etching in the fields of electronic devices and optoelectronic devices. Finally, challenges and outlooks for plasma modulation of 2D MCs are presented to offer valuable references for future studies.
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Affiliation(s)
- Siying Tian
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049, China
| | - Dapeng Sun
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Fengling Chen
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Honghao Wang
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049, China
| | - Chaobo Li
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Chujun Yin
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
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17
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Hsueh JW, Kuo LH, Chen PH, Chen WH, Chuang CY, Kuo CN, Lue CS, Lai YL, Liu BH, Wang CH, Hsu YJ, Lin CL, Chou JP, Luo MF. Investigating the role of undercoordinated Pt sites at the surface of layered PtTe 2 for methanol decomposition. Nat Commun 2024; 15:653. [PMID: 38253575 PMCID: PMC10803346 DOI: 10.1038/s41467-024-44840-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 01/08/2024] [Indexed: 01/24/2024] Open
Abstract
Transition metal dichalcogenides, by virtue of their two-dimensional structures, could provide the largest active surface for reactions with minimal materials consumed, which has long been pursued in the design of ideal catalysts. Nevertheless, their structurally perfect basal planes are typically inert; their surface defects, such as under-coordinated atoms at the surfaces or edges, can instead serve as catalytically active centers. Here we show a reaction probability > 90 % for adsorbed methanol (CH3OH) on under-coordinated Pt sites at surface Te vacancies, produced with Ar+ bombardment, on layered PtTe2 - approximately 60 % of the methanol decompose to surface intermediates CHxO (x = 2, 3) and 35 % to CHx (x = 1, 2), and an ultimate production of gaseous molecular hydrogen, methane, water and formaldehyde. The characteristic reactivity is attributed to both the triangular positioning and varied degrees of oxidation of the under-coordinated Pt at Te vacancies.
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Affiliation(s)
- Jing-Wen Hsueh
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan City, 320317, Taiwan
| | - Lai-Hsiang Kuo
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan City, 320317, Taiwan
| | - Po-Han Chen
- Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2 Kuang-Fu Road, Hsinchu, 300044, Taiwan
| | - Wan-Hsin Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu, 300039, Taiwan
| | - Chi-Yao Chuang
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu, 300039, Taiwan
| | - Chia-Nung Kuo
- Department of Physics, National Cheng Kung University, No. 1 University Rd., Tainan, 701, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei, 10601, Taiwan
| | - Chin-Shan Lue
- Department of Physics, National Cheng Kung University, No. 1 University Rd., Tainan, 701, Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei, 10601, Taiwan
- Program on Key Materials, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan, 701, Taiwan
| | - Yu-Ling Lai
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu, 300092, Taiwan
| | - Bo-Hong Liu
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu, 300092, Taiwan
| | - Chia-Hsin Wang
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu, 300092, Taiwan
| | - Yao-Jane Hsu
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Rd., Hsinchu Science Park, Hsinchu, 300092, Taiwan
| | - Chun-Liang Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, No. 1001 University Rd., Hsinchu, 300039, Taiwan.
| | - Jyh-Pin Chou
- Department of Physics, National Changhua University of Education, No. 1, Jin-De Rd., Changhua, 50007, Taiwan.
| | - Meng-Fan Luo
- Department of Physics, National Central University, No. 300 Jhongda Rd., Jhongli District, Taoyuan City, 320317, Taiwan.
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18
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Mondal S, Basak D. Excitonic Rydberg States in a Trilayer to Monolayer H 2-Aided CVD-Grown Large-Area MoS 2 Film with Excellent UV to Visible Broad Band Photodetection Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2940-2953. [PMID: 38176105 DOI: 10.1021/acsami.3c15655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
The diverse nature of optoelectronic properties of few-layer or monolayer MoS2 is generally dominated by A and B excitons. Occasionally, strong Coulombic interactions within the 2D monolayer led to the creation of hydrogen-like Rydberg states of excitons in MoS2 similar to other 2D monolayers. In this paper, a simple process is used to convert trilayer MoS2 films to a monolayer by introducing H2 gas during chemical vapor deposition. Remarkably, alongside the usual A, B excitons, and A- trion, the appearance of the Rydberg states is evidenced by photoluminescence spectra even at room temperature; also, there is an increase in their areal percentage with an increase in H2 content. The s-type excited Rydberg states up to the fourth order (n = 5) and third order (n = 4) of A and B excitons, respectively, have been probed from the photoluminescence spectra at 93 K. Unprecedentedly, the first-order derivative of room-temperature photocurrent spectrum reveals the Rydberg states concurrently and elaboratively. Furthermore, the large-area MoS2 films exhibit photoresponse in a broad UV to visible region with excellent photosensitivity (∼102) toward both UV and visible lights. Not only does this provide a profound understanding of the excitonic Rydberg states but also highlights the considerable potential of large-area monolayer MoS2 overcoming the difficulty of tiny flake-related 2D device endeavors.
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Affiliation(s)
- Sourav Mondal
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Durga Basak
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
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19
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Lee I, Kang M, Park S, Park C, Lee H, Bae S, Lim H, Kim S, Hong W, Choi SY. Healing Donor Defect States in CVD-Grown MoS 2 Field-Effect Transistors Using Oxygen Plasma with a Channel-Protecting Barrier. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305143. [PMID: 37670210 DOI: 10.1002/smll.202305143] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Revised: 08/15/2023] [Indexed: 09/07/2023]
Abstract
Molybdenum disulfide (MoS2 ), a metal dichalcogenide, is a promising channel material for highly integrated scalable transistors. However, intrinsic donor defect states, such as sulfur vacancies (Vs ), can degrade the channel properties and lead to undesired n-doping. A method for healing the donor defect states in monolayer MoS2 is proposed using oxygen plasma, with an aluminum oxide (Al2 O3 ) barrier layer that protects the MoS2 channel from damage by plasma treatment. Successful healing of donor defect states in MoS2 by oxygen atoms, even in the presence of an Al2 O3 barrier layer, is confirmed by X-ray photoelectron spectroscopy, photoluminescence, and Raman spectroscopy. Despite the decrease in 2D sheet carrier concentration (Δn2D = -3.82×1012 cm-2 ), the proposed approach increases the on-current and mobility by 18% and 44% under optimal conditions, respectively. Metal-insulator transition occurs at electron concentrations of 5.7×1012 cm-2 and reflects improved channel quality. Finally, the activation energy (Ea ) reduces at all the gate voltages (VG ) owing to a decrease in Vs , which act as a localized state after the oxygen plasma treatment. This study demonstrates the feasibility of plasma-assisted healing of defects in 2D materials and electrical property enhancement and paves the way for the development of next-generation electronic devices.
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Affiliation(s)
- Inseong Lee
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Mingu Kang
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Seohak Park
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Cheolmin Park
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hyeonji Lee
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sanggeun Bae
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hyeongjin Lim
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of Korea
| | - Woonggi Hong
- Convergence Semiconductor Research Center, School of Electronics and Electrical Engineering, Dankook University, 152 Jukjeon-ro, Suji-gu, Yongin-si, Gyeonggi-do, 16890, Republic of Korea
| | - Sung-Yool Choi
- Graphene/2D Materials Research Center, School of Electrical Engineering, Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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20
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Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
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Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
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21
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Ozden B, Zhang T, Liu M, Fest A, Pearson DA, Khan E, Uprety S, Razon JE, Cherry J, Fujisawa K, Liu H, Perea-López N, Wang K, Isaacs-Smith T, Park M, Terrones M. Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS 2 and WS 2 via Proton Irradiation. ACS NANO 2023; 17:25101-25117. [PMID: 38052014 DOI: 10.1021/acsnano.3c07752] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
It is critical to understand the laws of quantum mechanics in transformative technologies for computation and quantum information science applications to enable the ongoing second quantum revolution calls. Recently, spin qubits based on point defects have gained great attention, since these qubits can be initiated, selectively controlled, and read out with high precision at ambient temperature. The major challenge in these systems is controllably generating multiqubit systems while properly coupling the defects. To address this issue, we began by tackling the engineering challenges these systems present and understanding the fundamentals of defects. In this regard, we controllably generate defects in MoS2 and WS2 monolayers and tune their physicochemical properties via proton irradiation. We quantitatively discovered that the proton energy could modulate the defects' density and nature; higher defect densities were seen with lower proton irradiation energies. Three distinct defect types were observed: vacancies, antisites, and adatoms. In particular, the creation and manipulation of antisite defects provides an alternative way to create and pattern spin qubits based on point defects. Our results demonstrate that altering the particle irradiation energy can regulate the formation of defects, which can be utilized to modify the properties of 2D materials and create reliable electronic devices.
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Affiliation(s)
- Burcu Ozden
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Tianyi Zhang
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mingzu Liu
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Andres Fest
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Daniel A Pearson
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Ethan Khan
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Sunil Uprety
- Department of Physics, Auburn University, Auburn, Alabama 36849, United States
| | - Jiffer E Razon
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Javari Cherry
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Kazunori Fujisawa
- Water Environment and Civil Engineering, Shinshu University, Matsumoto, Nagano 390-8621, Japan
| | - He Liu
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nestor Perea-López
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16082, United States
| | - Tamara Isaacs-Smith
- Department of Physics, Auburn University, Auburn, Alabama 36849, United States
| | - Minseo Park
- Department of Physics, Auburn University, Auburn, Alabama 36849, United States
| | - Mauricio Terrones
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- NSF-IUCRC Center for Atomically Thin 1093 Multifunctional Coatings (ATOMIC), The Pennsylvania State University, University Park, Pennsylvania 16082, United States
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22
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Obaidulla SM, Supina A, Kamal S, Khan Y, Kralj M. van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device. NANOSCALE HORIZONS 2023; 9:44-92. [PMID: 37902087 DOI: 10.1039/d3nh00310h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.
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Affiliation(s)
- Sk Md Obaidulla
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Antonio Supina
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Chair of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Sherif Kamal
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| | - Yahya Khan
- Department of Physics, Karakoram International university (KIU), Gilgit 15100, Pakistan
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
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23
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Sleziona S, Pelella A, Faella E, Kharsah O, Skopinski L, Maas A, Liebsch Y, Schmeink J, Di Bartolomeo A, Schleberger M. Manipulation of the electrical and memory properties of MoS 2 field-effect transistors by highly charged ion irradiation. NANOSCALE ADVANCES 2023; 5:6958-6966. [PMID: 38059017 PMCID: PMC10696994 DOI: 10.1039/d3na00543g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 10/24/2023] [Indexed: 12/08/2023]
Abstract
Field-effect transistors based on molybdenum disulfide (MoS2) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or defects either in the MoS2 lattice or in the underlying substrate. We fabricated MoS2 field-effect transistors on SiO2/Si substrates, irradiated these devices with Xe30+ ions at a kinetic energy of 180 keV to deliberately introduce defects and studied the resulting changes of their electrical and hysteretic properties. We find clear influences of the irradiation: while the charge carrier mobility decreases linearly with increasing ion fluence (up to only 20% of its initial value) the conductivity actually increases again after an initial drop of around two orders of magnitude. We also find a significantly reduced n-doping (≈1012 cm-2) and a well-developed hysteresis after the irradiation. The hysteresis height increases with increasing ion fluence and enables us to characterize the irradiated MoS2 field-effect transistor as a memory device with remarkably longer relaxation times (≈ minutes) compared to previous works.
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Affiliation(s)
- Stephan Sleziona
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Aniello Pelella
- Department of Physics "E. R. Caianiello", University of Salerno, and CNR-SPIN via Giovanni Paolo II Fisciano 84084 Salerno Italy
| | - Enver Faella
- Department of Physics "E. R. Caianiello", University of Salerno, and CNR-SPIN via Giovanni Paolo II Fisciano 84084 Salerno Italy
| | - Osamah Kharsah
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Lucia Skopinski
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - André Maas
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Yossarian Liebsch
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Jennifer Schmeink
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Antonio Di Bartolomeo
- Department of Physics "E. R. Caianiello", University of Salerno, and CNR-SPIN via Giovanni Paolo II Fisciano 84084 Salerno Italy
| | - Marika Schleberger
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
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24
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Kang T, Lu Z, Liu L, Huang M, Hu Y, Liu H, Wu R, Liu Z, You J, Chen Y, Zhang K, Duan X, Wang N, Liu Y, Luo Z. In Situ Defect Engineering of Controllable Carrier Types in WSe 2 for Homomaterial Inverters and Self-Powered Photodetectors. NANO LETTERS 2023. [PMID: 38038404 DOI: 10.1021/acs.nanolett.3c03328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
WSe2 has a high mobility of electrons and holes, which is an ideal choice as active channels of electronics in extensive fields. However, carrier-type tunability of WSe2 still has enormous challenges, which are essential to overcome for practical applications. In this work, the direct growth of n-doped few-layer WSe2 is realized via in situ defect engineering. The n-doping of WSe2 is attributed to Se vacancies induced by the H2 flow purged in the cooling process. The electrical measurements based on field effect transistors demonstrate that the carrier type of WSe2 synthesized is successfully transferred from the conventional p-type to the rarely reported n-type. The electron carrier concentration is efficiently modulated by the concentration of H2 during the cooling process. Furthermore, homomaterial inverters and self-powered photodetectors are fabricated based on the doping-type-tunable WSe2. This work reveals a significant way to realize the controllable carrier type of two-dimensional (2D) materials, exhibiting great potential in future 2D electronics engineering.
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Affiliation(s)
- Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Meizhen Huang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yunxia Hu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Kenan Zhang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
- Hong Kong University of Science and Technology-Shenzhen Research Institute, No. 9 Yuexing first RD, Hi-Tech Park, Nanshan, Shenzhen 518057, People's Republic of China
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25
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Cheng J, Jin Y, Zhao J, Jing Q, Gu B, Wei J, Yi S, Li M, Nie W, Qin Q, Zhang D, Zheng G, Che R. From VIB- to VB-Group Transition Metal Disulfides: Structure Engineering Modulation for Superior Electromagnetic Wave Absorption. NANO-MICRO LETTERS 2023; 16:29. [PMID: 37994956 PMCID: PMC10667208 DOI: 10.1007/s40820-023-01247-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 10/11/2023] [Indexed: 11/24/2023]
Abstract
The laminated transition metal disulfides (TMDs), which are well known as typical two-dimensional (2D) semiconductive materials, possess a unique layered structure, leading to their wide-spread applications in various fields, such as catalysis, energy storage, sensing, etc. In recent years, a lot of research work on TMDs based functional materials in the fields of electromagnetic wave absorption (EMA) has been carried out. Therefore, it is of great significance to elaborate the influence of TMDs on EMA in time to speed up the application. In this review, recent advances in the development of electromagnetic wave (EMW) absorbers based on TMDs, ranging from the VIB group to the VB group are summarized. Their compositions, microstructures, electronic properties, and synthesis methods are presented in detail. Particularly, the modulation of structure engineering from the aspects of heterostructures, defects, morphologies and phases are systematically summarized, focusing on optimizing impedance matching and increasing dielectric and magnetic losses in the EMA materials with tunable EMW absorption performance. Milestones as well as the challenges are also identified to guide the design of new TMDs based dielectric EMA materials with high performance.
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Affiliation(s)
- Junye Cheng
- Department of Materials Science, Shenzhen MSU-BIT University, Shenzhen, 517182, People's Republic of China.
| | - Yongheng Jin
- Department of Materials Science, Shenzhen MSU-BIT University, Shenzhen, 517182, People's Republic of China
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jinghan Zhao
- Department of Materials Science, Shenzhen MSU-BIT University, Shenzhen, 517182, People's Republic of China
| | - Qi Jing
- Department of Materials Science, Shenzhen MSU-BIT University, Shenzhen, 517182, People's Republic of China
| | - Bailong Gu
- Department of Materials Science, Shenzhen MSU-BIT University, Shenzhen, 517182, People's Republic of China
| | - Jialiang Wei
- Department of Materials Science, Shenzhen MSU-BIT University, Shenzhen, 517182, People's Republic of China
| | - Shenghui Yi
- Department of Materials Science, Shenzhen MSU-BIT University, Shenzhen, 517182, People's Republic of China
| | - Mingming Li
- Department of Materials Science, Shenzhen MSU-BIT University, Shenzhen, 517182, People's Republic of China
| | - Wanli Nie
- Department of Materials Science, Shenzhen MSU-BIT University, Shenzhen, 517182, People's Republic of China
| | - Qinghua Qin
- Department of Materials Science, Shenzhen MSU-BIT University, Shenzhen, 517182, People's Republic of China.
| | - Deqing Zhang
- School of Materials Science and Engineering, Qiqihar University, Qiqihar, 161006, People's Republic of China
| | - Guangping Zheng
- Department of Mechanical Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China.
| | - Renchao Che
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai, 200438, People's Republic of China.
- Zhejiang Laboratory, Hangzhou, 311100, People's Republic of China.
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26
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Singh A, Mishra AK. Large area CVD-grown vertically and horizontally oriented MoS 2 nanostructures as SERS biosensors for single molecule detection. NANOSCALE 2023; 15:16480-16492. [PMID: 37794765 DOI: 10.1039/d3nr02284f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/06/2023]
Abstract
Surface-enhanced Raman scattering (SERS) has attracted extensive attention for its rapid, ultra-sensitive, non-destructive and label-free fingerprint detection of trace molecules. Recently, two-dimensional transition metal dichalcogenides have been investigated as SERS substrates owing to their low cost, simple synthesis, excellent optical behavior, tunable bandgap, high carrier mobility and good biocompatibility. Here, we have synthesized 2H-MoS2 nanostructures of different morphologies (vertically and horizontally oriented) via the chemical vapor deposition (CVD) method on different substrates (FTO-coated glass, Si and SiO2-Si) and utilized them as SERS substrates for the detection of bilirubin and vitamin B12 biomolecules. The strong vibronic coupling within the charge transfer (CT) process leads to photo-induced charge transfer (PICT) resonance, showing enhanced SERS activity. This CT mechanism is further confirmed by observing quenching of the room temperature PL spectra and enhanced SERS signals of biomolecules over SERS substrates. To the best of our knowledge, the detection limit in this work (10-11 M for bilirubin and 10-8 M for vitamin B12) is considerably higher than previously reported values. The improved efficiency of the PICT process can be achieved at low temperature, and this is confirmed when performing low temperature-dependent photoluminescence (PL) studies on SERS substrates. Furthermore, we also demonstrated enhanced SERS activity at low temperature on CVD-grown pristine MoS2 films over different substrates for biomolecule detection for the first time, attributing this activity to the enhanced PICT process at low temperature.
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Affiliation(s)
- Ankita Singh
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005, India.
| | - Ashish Kumar Mishra
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005, India.
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27
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Feng PH, Hsiao KY, Jhan DJ, Chen YL, Keng PY, Chang SY, Lu MY. Unleashing the Power of 2D MoS 2: In Situ TEM Study of Its Potential as Diffusion Barriers in Ru Interconnects. ACS APPLIED MATERIALS & INTERFACES 2023; 15:48543-48550. [PMID: 37792701 DOI: 10.1021/acsami.3c10656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/06/2023]
Abstract
This study presents the utilization of MoS2 as a diffusion barrier for metal interconnects, in situ transmission electron microscopy (TEM) observations are employed for comprehensive understanding. The diffusion-blocking ability of MoS2 is discussed by the diffusion and phase transformation between Ru and Si via TEM diffraction and imaging. When the sample is heated to a high temperature such that MoS2 loses the ability to block the diffusion, Si diffuses through the MoS2 into the Ru layer, leading to the formation of Ru2Si3. Both multilayer and monolayer (1L) MoS2 exhibit exceptional diffusion-blocking ability up to 800 °C. Furthermore, plasma-treated 1L-MoS2 shows a slightly low diffusion-blocking temperature of 750 °C, while the dangling bonds in MoS2 improve the interfacial adhesion. These findings suggest that MoS2 holds great potential as a diffusion barrier for metal interconnects.
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Affiliation(s)
- Ping-Hsuan Feng
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
| | - Kai-Yuan Hsiao
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
| | - Dun-Jie Jhan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
| | - Yu-Lin Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
| | - Pei Yuin Keng
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
| | - Shou-Yi Chang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
| | - Ming-Yen Lu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
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28
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Walke P, Kaupmees R, Grossberg-Kuusk M, Krustok J. Unusual Defect-Related Room-Temperature Emission from WS 2 Monolayers Synthesized through a Potassium-Based Precursor. ACS OMEGA 2023; 8:37958-37970. [PMID: 37867715 PMCID: PMC10586178 DOI: 10.1021/acsomega.3c03476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 08/29/2023] [Indexed: 10/24/2023]
Abstract
Alkali-metal-based synthesis of transition metal dichalcogenide (TMD) monolayers is an established strategy for both ultralarge lateral growth and promoting the metastable 1T phase. However, whether this can also lead to modified optical properties is underexplored, with reported photoluminescence (PL) spectra from semiconducting systems showing little difference from more traditional syntheses. Here, we show that the growth of WS2 monolayers from a potassium-salt precursor can lead to a pronounced low-energy emission in the PL spectrum. This is seen 200-300 meV below the A exciton and can dominate the signal at room temperature. The emission is spatially heterogeneous, and its presence is attributed to defects in the layer due to sublinear intensity power dependence, a noticeable aging effect, and insensitivity to washing in water and acetone. Interestingly, statistical analysis links the band to an increase in the width of the A1g Raman band. The emission can be controlled by altering when hydrogen is introduced into the growth process. This work demonstrates intrinsic and intense defect-related emission at room temperature and establishes further opportunities for tuning TMD properties through alkali-metal precursors.
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Affiliation(s)
- Peter Walke
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Reelika Kaupmees
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Maarja Grossberg-Kuusk
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Jüri Krustok
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
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29
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Mawlong LPL, Hoang AT, Chintalapalli J, Ji S, Lee K, Kim K, Ahn JH. Reduced Defect Density in MOCVD-Grown MoS 2 by Manipulating the Precursor Phase. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47359-47367. [PMID: 37756669 DOI: 10.1021/acsami.3c09027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/29/2023]
Abstract
Advancements in the synthesis of large-area, high-quality two-dimensional transition metal dichalcogenides such as MoS2 play a crucial role in the development of future electronic and optoelectronic devices. The presence of defects formed by sulfur vacancies in MoS2 results in low photoluminescence emission and imparts high n-type doping behavior, thus substantially affecting material quality. Herein, we report a new method in which single-phase (liquid) precursors are used for the metal-organic chemical vapor deposition (MOCVD) growth of a MoS2 film. Furthermore, we fabricated a high-performance photodetector (PD) and achieved improved photoresponsivity and faster photoresponse in the spectral range 405-637 nm compared to those of PDs fabricated by the conventional MOCVD method. In addition, the fabricated MoS2 thin film showed a threshold voltage shift in the positive gate bias direction owing to the reduced number of S vacancy defects in the MoS2 lattice. Thus, our method significantly improved the synthesis of monolayer MoS2 and can expand the application scope of high-quality, atomically thin materials in large-scale electronic and optoelectronic devices.
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Affiliation(s)
- Larionette P L Mawlong
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Jyothi Chintalapalli
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Kihyun Lee
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
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30
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Lam NH, Ko JH, Choi BK, Ly TT, Lee G, Jang K, Chang YJ, Soon A, Kim J. Direct characterization of intrinsic defects in monolayer ReSe 2 on graphene. NANOSCALE ADVANCES 2023; 5:5513-5519. [PMID: 37822900 PMCID: PMC10563845 DOI: 10.1039/d3na00363a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Accepted: 09/15/2023] [Indexed: 10/13/2023]
Abstract
Understanding the characteristics of intrinsic defects in crystals is of great interest in many fields, from fundamental physics to applied materials science. Combined investigations of scanning tunneling microscopy/spectroscopy (STM/S) and density functional theory (DFT) are conducted to understand the nature of Se vacancy defects in monolayer (ML) ReSe2 grown on a graphene substrate. Among four possible Se vacancy sites, we identify the Se4 vacancy close to the Re layer by registry between STM topography and DFT simulated images. The Se4 vacancy is also thermodynamically favored in formation energy calculations, supporting its common observation via STM. dI/dV spectroscopy shows that the Se4 vacancy has a defect state at around -1.0 V, near the valence band maximum (EVBM). DOS calculations done for all four Se vacancies indicate that only the Se4 vacancy presents such a defect state near EVBM, confirming experimental observations. Our work provides valuable insights into the behavior of ML ReSe2/graphene heterojunctions containing naturally occurring Se vacancies, which may have strong implications in electronic device applications.
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Affiliation(s)
- Nguyen Huu Lam
- Department of Physics, University of Ulsan Ulsan 44610 Republic of Korea
| | - Jae-Hyeok Ko
- Department of Materials Science and Engineering and Center for Artificial Synesthesia Materials Discovery, Yonsei University Seoul 03722 Republic of Korea
| | - Byoung Ki Choi
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory Berkeley California 94720 USA
- Department of Physics, University of Seoul Seoul 02504 Republic of Korea
| | - Trinh Thi Ly
- Department of Physics, University of Ulsan Ulsan 44610 Republic of Korea
- Vietnam National University Ho Chi Minh City 700000 Vietnam
- Faculty of Physics and Engineering Physics, University of Science Ho Chi Minh City 700000 Vietnam
| | - Giyeok Lee
- Department of Materials Science and Engineering and Center for Artificial Synesthesia Materials Discovery, Yonsei University Seoul 03722 Republic of Korea
| | - Kyuha Jang
- Radiation Center for Ultrafast Science, Korea Atomic Energy Research Institute Daejeon 34057 Republic of Korea
| | - Young Jun Chang
- Department of Physics, University of Seoul Seoul 02504 Republic of Korea
- Department of Smart Cities, University of Seoul Seoul 02504 Republic of Korea
| | - Aloysius Soon
- Department of Materials Science and Engineering and Center for Artificial Synesthesia Materials Discovery, Yonsei University Seoul 03722 Republic of Korea
| | - Jungdae Kim
- Department of Physics, University of Ulsan Ulsan 44610 Republic of Korea
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31
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Ranjuna MK, Balakrishnan J. High temperature anomalous Raman and photoluminescence response of molybdenum disulfide with sulfur vacancies. Sci Rep 2023; 13:16418. [PMID: 37775525 PMCID: PMC10541451 DOI: 10.1038/s41598-023-43756-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2023] [Accepted: 09/27/2023] [Indexed: 10/01/2023] Open
Abstract
We report an intriguing anomalous behavior observed in the temperature-dependent Raman spectra of mono-, bi-, and trilayer molybdenum disulfide samples with sulfur vacancies, measured at high temperatures ranging from room temperature to 463 K. In contrast to existing reports, we observed a decrease in the FWHM of the A[Formula: see text] phonon mode, along with an increase in the relative intensity of the A[Formula: see text] mode to the E[Formula: see text] mode, as the temperature increased. This trend becomes less prominent as the layer number increases from monolayer, disappearing entirely in few-layer samples. Additionally, we observed an intensity enhancement in the photoluminescence spectra of MoS2 samples at high temperatures (up to 550 K), which depends on the layer number. These observations are explained by considering the presence of sulfur vacancies, their interaction with the environment, electron density reduction, and a phonon-mediated intervalley charge transfer at elevated temperatures. Our results unambiguously establish that the effect of defects (sulfur vacancies) is more prominently reflected in the temperature dependence of FWHM and the relative intensity of the Raman modes rather than in the Raman peak positions.
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Affiliation(s)
- M K Ranjuna
- Department of Physics, Indian Institute of Technology Palakkad, Palakkad, Kerala, 678623, India.
| | - Jayakumar Balakrishnan
- Department of Physics, Indian Institute of Technology Palakkad, Palakkad, Kerala, 678623, India.
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32
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Han B, Gali SM, Dai S, Beljonne D, Samorì P. Isomer Discrimination via Defect Engineering in Monolayer MoS 2. ACS NANO 2023; 17:17956-17965. [PMID: 37704191 DOI: 10.1021/acsnano.3c04194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
The all-surface nature of two-dimensional (2D) materials renders them highly sensitive to environmental changes, enabling the on-demand tailoring of their physical properties. Transition metal dichalcogenides, such as 2H molybdenum disulfide (MoS2), can be used as a sensory material capable of discriminating molecules possessing a similar structure with a high sensitivity. Among them, the identification of isomers represents an unexplored and challenging case. Here, we demonstrate that chemical functionalization of defect-engineered monolayer MoS2 enables isomer discrimination via a field-effect transistor readout. A multiscale characterization comprising X-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and electrical measurement corroborated by theoretical calculations revealed that monolayer MoS2 exhibits exceptional sensitivity to the differences in the dipolar nature of molecules arising from their chemical structure such as the one in difluorobenzenethiol isomers, allowing their precise recognition. Our findings underscore the potential of 2D materials for molecular discrimination purposes, in particular for the identification of complex isomers.
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Affiliation(s)
- Bin Han
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France
| | - Sai Manoj Gali
- Université de Mons, Laboratory for Chemistry of Novel Materials, Place du Parc 20, Mons 7000, Belgium
| | - Shuting Dai
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
| | - David Beljonne
- Université de Mons, Laboratory for Chemistry of Novel Materials, Place du Parc 20, Mons 7000, Belgium
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France
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33
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Yao YC, Wu BY, Chin HT, Yen ZL, Ting CC, Hofmann M, Hsieh YP. Nitrogen Pretreatment of Growth Substrates for Vacancy-Saturated MoS 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:42746-42752. [PMID: 37646637 DOI: 10.1021/acsami.3c07793] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Two-dimensional transition-metal dichalcogenides (2D TMDCs) are considered promising materials for optoelectronics due to their unique optical and electric properties. However, their potential has been limited by the occurrence of atomic vacancies during synthesis. While post-treatment processes have demonstrated the passivation of such vacancies, they increase process complexity and affect the TMDC's quality. We here introduce the concept of pretreatment as a facile and powerful route to solve the problem of vacancies in MoS2. Low-temperature nitridation of the sapphire substrate prior to growth provides a nondestructive method to MoS2 modification without introducing new processing steps or increasing the thermal budget. Spectroscopic characterization and atomic-resolution microscopy reveal the incorporation of nitrogen from the sapphire surface layer into chalcogen vacancies. The resulting MoS2 with nitrogen-saturated defects shows a decrease in midgap states and more intrinsic doping as confirmed by ab initio calculations and optoelectronic measurements. The demonstrated pretreatment method opens up new routes toward future, high-performance 2D electronics, as evidenced by a 3-fold reduction in contact resistance and a 10-fold improved performance of 2D photodetectors.
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Affiliation(s)
- Yu-Chi Yao
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Bo-Yi Wu
- Graduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng University, Chia-Yi 62102, Taiwan
| | - Hao-Ting Chin
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Zhi-Long Yen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Chu-Chi Ting
- Graduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng University, Chia-Yi 62102, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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34
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Xu N, Hong D, Liang B, Qiu L, Tian Y, Li S. Lattice Vacancy Induced Energy Renormalization of Photonic Quasiparticles in Two-Dimensional Semiconductors. ACS NANO 2023; 17:16904-16911. [PMID: 37603694 DOI: 10.1021/acsnano.3c03996] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2023]
Abstract
Coulomb interactions among dense charges and quasiparticle energy renormalization are at the center of quantum science because they significantly reshape the fundamental electronic and photonic properties of materials. While lattice vacancies are ubiquitous in solid materials, their physical effect on the Coulomb interaction among quasiparticles is normally weak and negligible. Here we show that in atomically thin semiconductors the presence of lattice vacancies emerges as an important but unexplored origin for the nontrivial renormalization of quasiparticle binding energies, due to the subtle modification of overall dielectric functions at low dimensionality. Such a renormalization effect leads to unusual reduction in the energy scales of photonic quasiparticles and red shifts of photoluminescence as the density of lattice vacancies increases. With strict configurative form factors derived, a dielectric screening model is also established for the generalized trilayer systems to capture the fine modification in the energy scales of quasiparticles and to elucidate the dielectric functions versus realistic Bohr lengths. This finding highlights the essential but commonly neglected role of lattice vacancies and deciphers the longstanding enigma of unpredictable photoluminescent line shifts in low-dimensional systems.
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Affiliation(s)
- Ning Xu
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
| | - Daocheng Hong
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
| | - Binxi Liang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
| | - Lipeng Qiu
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
| | - Yuxi Tian
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
| | - Songlin Li
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, People's Republic of China
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35
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Fu W, John M, Maddumapatabandi TD, Bussolotti F, Yau YS, Lin M, Johnson Goh KE. Toward Edge Engineering of Two-Dimensional Layered Transition-Metal Dichalcogenides by Chemical Vapor Deposition. ACS NANO 2023; 17:16348-16368. [PMID: 37646426 DOI: 10.1021/acsnano.3c04581] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
The manipulation of edge configurations and structures in atomically-thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges) as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc.). These edge-rich TMD layers offer versatile candidates for probing the physical and chemical properties and exploring potential applications in electronics, optoelectronics, catalysis, sensing, and quantum technologies. In this Review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of distinct properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this Review is to motivate further research and development efforts to use CVD as a scalable approach to harness the benefits of such crystal-edge engineering.
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Affiliation(s)
- Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Mark John
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore
| | - Thathsara D Maddumapatabandi
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Fabio Bussolotti
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Yong Sean Yau
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Ming Lin
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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36
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Bhawna, Alam A, Aslam M. Oxygen and moisture-induced healing of halide double perovskite surface defects. J Chem Phys 2023; 159:084703. [PMID: 37610019 DOI: 10.1063/5.0154047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Accepted: 08/07/2023] [Indexed: 08/24/2023] Open
Abstract
In this work, we studied the impact of environmental constituents such as oxygen (O2) and moisture on halide double perovskite (HDP) films. The transport measurements indicate that an increment in O2 concentration enhances the resistivity of a Cs2AgBiBr6 film by two orders of magnitude. The adsorption of O2 on the film's surface helps in passivation of defects (∼50% reduction in defect density on O2 exposure), which inhibits ion migration and results in an increased resistivity of the film. The process of adsorption and desorption of O2 on the film surface is found to be fully reversible. In contrast, the resistivity of double perovskite films decreases by an order of magnitude in the presence of moisture. This is attributed to the generation of free protons as a result of the dissociation of water molecules at the films' surface, hence exhibiting an increase in current under external bias. The HDP films possess high resistivity (for T < 100 °C) due to the desorption of physisorbed water layers from the surface, which gradually decreases with an increase in the operating temperature. This work demonstrates that O2 and moisture are a good combination for defect passivation in any HDPs, in general.
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Affiliation(s)
- Bhawna
- Department of Physics, Indian Institute of Technology Bombay, Mumbai, India
| | - Aftab Alam
- Department of Physics, Indian Institute of Technology Bombay, Mumbai, India
| | - M Aslam
- Department of Physics, Indian Institute of Technology Bombay, Mumbai, India
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37
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Bae S, Jeong TY, Raebiger H, Yee KJ, Kim YH. Localized coherent phonon generation in monolayer MoSe 2 from ultrafast exciton trapping at shallow traps. NANOSCALE HORIZONS 2023; 8:1282-1287. [PMID: 37470115 DOI: 10.1039/d3nh00194f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
We report spectroscopic evidence for the ultrafast trapping of band edge excitons at defects and the subsequent generation of defect-localized coherent phonons (CPs) in monolayer MoSe2. While the photoluminescence measurement provides signals of exciton recombination at both shallow and deep traps, our time-resolved pump-probe spectroscopy on the sub-picosecond time scale detects localized CPs only from the ultrafast exciton trapping at shallow traps. Based on occupation-constrained density functional calculations, we identify the Se vacancy and the oxygen molecule adsorbed on a Se vacancy as the atomistic origins of deep and shallow traps, respectively. Establishing the correlations between the defect-induced ultrafast exciton trapping and the generation of defect-localized CPs, our work could open up new avenues to engineer photoexcited carriers through lattice defects in two-dimensional materials.
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Affiliation(s)
- Soungmin Bae
- Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea.
- Department of Physics, Yokohama National University, Yokohama, Japan
| | - Tae Young Jeong
- Department of Physics, Chungnam National University, Daejeon 34134, Korea.
| | - Hannes Raebiger
- Department of Physics, Yokohama National University, Yokohama, Japan
| | - Ki-Ju Yee
- Department of Physics, Chungnam National University, Daejeon 34134, Korea.
| | - Yong-Hoon Kim
- Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea.
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38
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Gao L, Zhang X, Yu H, Hong M, Wei X, Chen Z, Zhang Q, Liao Q, Zhang Z, Zhang Y. Deciphering Vacancy Defect Evolution of 2D MoS 2 for Reliable Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:38603-38611. [PMID: 37542456 DOI: 10.1021/acsami.3c07806] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/07/2023]
Abstract
Two-dimensional (2D) MoS2 is an excellent candidate channel material for next-generation integrated circuit (IC) transistors. However, the reliability of MoS2 is of great concern due to the serious threat of vacancy defects, such as sulfur vacancies (VS). Evaluating the impact of vacancy defects on the service reliability of MoS2 transistors is crucial, but it has always been limited by the difficulty in systematically tracking and analyzing the changes and effects of vacancy defects in the service environment. Here, a simulated initiator is established for deciphering the evolution of vacancy defects in MoS2 and their influence on the reliability of transistors. The results indicate that VS below 1.3% are isolated by slow enrichment during initiation. Over 1.3% of VS tend to enrich in pairs and over 3.5% of the enriched VS easily evolve into nanopores. The enriched VS with electron doping in the channel cause the threshold voltage (Vth) negative drift approaching 6 V, while the expanded nanopores initiate the Vth roll-off and punch-through of transistors. Finally, sulfur steam deposition has been proposed to constrain VS enrichment, and reliable MoS2 transistors are constructed. Our research provides a new method for deciphering and identifying the impact of defects.
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Affiliation(s)
- Li Gao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Mengyu Hong
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xiaofu Wei
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhangyi Chen
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Qinghua Zhang
- Collaborative Innovation Center of Quantum Matter, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Qingliang Liao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
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39
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Zhang T, Voshell A, Zhou D, Ward ZD, Yu Z, Liu M, Díaz Aponte KO, Granzier-Nakajima T, Lei Y, Liu H, Terrones H, Elías AL, Rana M, Terrones M. Effects of post-transfer annealing and substrate interactions on the photoluminescence of 2D/3D monolayer WS 2/Ge heterostructures. NANOSCALE 2023; 15:12348-12357. [PMID: 37449871 DOI: 10.1039/d3nr00961k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
The ultraflat and dangling bond-free features of two-dimensional (2D) transition metal dichalcogenides (TMDs) endow them with great potential to be integrated with arbitrary three-dimensional (3D) substrates, forming mixed-dimensional 2D/3D heterostructures. As examples, 2D/3D heterostructures based on monolayer TMDs (e.g., WS2) and bulk germanium (Ge) have become emerging candidates for optoelectronic applications, such as ultrasensitive photodetectors that are capable of detecting broadband light from the mid-infrared (IR) to visible range. Currently, the study of WS2/Ge(100) heterostructures is in its infancy and it remains largely unexplored how sample preparation conditions and different substrates affect their photoluminescence (PL) and other optoelectronic properties. In this report, we investigated the PL quenching effect in monolayer WS2/Ge heterostructures prepared via a wet transfer process, and employed PL spectroscopy and atomic force microscopy (AFM) to demonstrate that post-transfer low-pressure annealing improves the interface quality and homogenizes the PL signal. We further studied and compared the temperature-dependent PL emissions of WS2/Ge with those of as-grown WS2 and WS2/graphene/Ge heterostructures. The results demonstrate that the integration of WS2 on Ge significantly quenches the PL intensity (from room temperature down to 80 K), and the PL quenching effect becomes even more prominent in WS2/graphene/Ge heterostructures, which is likely due to synergistic PL quenching effects induced by graphene and Ge. Density functional theory (DFT) and Heyd-Scuseria-Ernzerhof (HSE) hybrid functional calculations show that the interaction of WS2 and Ge is stronger than in adjacent layers of bulk WS2, thus changing the electronic band structure and making the direct band gap of monolayer WS2 less accessible. By understanding the impact of post-transfer annealing and substrate interactions on the optical properties of monolayer TMD/Ge heterostructures, this study contributes to the exploration of the processing-properties relationship and may guide the future design and fabrication of optoelectronic devices based on 2D/3D heterostructures of TMDs/Ge.
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Affiliation(s)
- Tianyi Zhang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Andrew Voshell
- Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
| | - Da Zhou
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Zachary D Ward
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Zhuohang Yu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Mingzu Liu
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Kevin O Díaz Aponte
- Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
| | - Tomotaroh Granzier-Nakajima
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Yu Lei
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
- Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - He Liu
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA 16802, USA
| | - Humberto Terrones
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Ana Laura Elías
- Department of Physics, Binghamton University, Binghamton, NY 13902, USA
| | - Mukti Rana
- Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA 16802, USA
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40
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Jiang Y, Liu Z, Zhou H, Sharma A, Deng J, Ke C. Physical adsorption and oxidation of ultra-thin MoS 2crystals: insights into surface engineering for 2D electronics and beyond. NANOTECHNOLOGY 2023; 34:405701. [PMID: 37462320 DOI: 10.1088/1361-6528/ace1f7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Accepted: 06/26/2023] [Indexed: 01/25/2024]
Abstract
The oxidation mechanism of atomically thin molybdenum disulfide (MoS2) plays a critical role in its nanoelectronics, optoelectronics, and catalytic applications, where devices often operate in an elevated thermal environment. In this study, we systematically investigate the oxidation of mono- and few-layer MoS2flakes in the air at temperatures ranging from 23 °C to 525 °C and relative humidities of 10%-60% by using atomic force microscopy (AFM), Raman spectroscopy and x-ray photoelectron spectroscopy. Our study reveals the formation of a uniform nanometer-thick physical adsorption layer on the surface of MoS2, which is attributed to the adsorption of ambient moisture. This physical adsorption layer acts as a thermal shield of the underlying MoS2lattice to enhance its thermal stability and can be effectively removed by an AFM tip scanning in contact mode or annealing at 400 °C. Our study shows that high-temperature thermal annealing and AFM tip-based cleaning result in chemical adsorption on sulfur vacancies in MoS2, leading to p-type doping. Our study highlights the importance of humidity control in ensuring reliable and optimal performance for MoS2-based electronic and electrochemical devices and provides crucial insights into the surface engineering of MoS2, which are relevant to the study of other two-dimensional transition metal dichalcogenide materials and their applications.
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Affiliation(s)
- Yingchun Jiang
- Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
| | - Zihan Liu
- Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
| | - Huimin Zhou
- Department of Systems Science and Industrial Engineering, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
| | - Anju Sharma
- Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
| | - Jia Deng
- Department of Systems Science and Industrial Engineering, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
| | - Changhong Ke
- Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
- Materials Science and Engineering Program, State University of New York at Binghamton, Binghamton, NY 13902, United States of America
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41
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Duan R, Qi W, Li P, Tang K, Ru G, Liu W. A High-Performance MoS 2-Based Visible-Near-Infrared Photodetector from Gateless Photogating Effect Induced by Nickel Nanoparticles. RESEARCH (WASHINGTON, D.C.) 2023; 6:0195. [PMID: 37456932 PMCID: PMC10348407 DOI: 10.34133/research.0195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2023] [Accepted: 06/25/2023] [Indexed: 07/18/2023]
Abstract
Recent advancements in two-dimensional materials have shown huge potential for optoelectronic applications. It is challenging to achieve highly effective and sensitive broadband photodetection based on MoS2 devices. Defect engineering, such as introducing vacancies, can narrow the bandgap and boost the separation of photogenerated carriers by defect states but leads to a slow response speed. Herein, we propose a nickel nanoparticle-induced gateless photogating effect with a unique energy band structure to enable the application of defect engineering and achieve high optoelectronic performance. The device based on Ni nanoparticle-decorated MoS2 with S vacancies exhibited high responsivities of 106.21 and 1.38 A W-1 and detectivities of 1.9 × 1012 and 8.9 × 109 Jones under 532 and 980 nm illumination (visible to near infrared), respectively, with highly accelerated response speed. This strategy provides new insight into optimizing defect engineering to design high-performance optoelectronic devices capable of broadband photodetection.
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Affiliation(s)
- Ran Duan
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials,
Northwestern Polytechnical University, Xi’an 710072, China
| | - Weihong Qi
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials,
Northwestern Polytechnical University, Xi’an 710072, China
- Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265503, China
| | - Panke Li
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials,
Northwestern Polytechnical University, Xi’an 710072, China
| | - Kewei Tang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials,
Northwestern Polytechnical University, Xi’an 710072, China
| | - Guoliang Ru
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials,
Northwestern Polytechnical University, Xi’an 710072, China
| | - Weimin Liu
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials,
Northwestern Polytechnical University, Xi’an 710072, China
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics,
Chinese Academy of Sciences, Lanzhou 730000, China
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42
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Sahithi A, Sumithra K. Adsorption of singlet and triplet oxygen on B-doped graphene: adsorption and electronic characteristics. RSC Adv 2023; 13:20868-20875. [PMID: 37441029 PMCID: PMC10334708 DOI: 10.1039/d3ra00624g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/30/2023] [Accepted: 06/18/2023] [Indexed: 07/15/2023] Open
Abstract
The density functional calculations of electronic and structural properties of the adsorption of dioxygen on boron-doped graphene surfaces are conducted using spin-polarized density functional theory methods, including van der Waals correction. The results show significant differences in the adsorption characteristics of singlet and triplet oxygen on boron-doped graphene surfaces. Both triplet and singlet show only weak attraction to intrinsic and singly doped graphene. The singlet oxygen adsorption on doped graphene shows fascinating features involving chemisorption with dioxetane ring formation with appreciable charge transfer. In contrast, the triplet oxygen is only weakly physisorbed on the boron-doped surfaces. Chemisorption of singlet oxygen occurs with noticeable charge transfer and leads to almost featureless band structures, while the triplet oxygen physisorption proceeds with a well-defined band structure. Chemisorption of the singlet oxygen is attributed to the enormous mixing of π* of dioxygen and the p-orbitals of dopant and carbon. Because of the difference in adsorption characteristics, chemically modified graphene can find use in detecting and trapping singlet oxygen, which has potential applications in photodynamic therapy.
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Affiliation(s)
- A Sahithi
- Birla Institute of Technology and Science (BITS), Pilani Hyderabad Campus, Shamirpet Telangana State 500078 India
| | - K Sumithra
- Birla Institute of Technology and Science (BITS), Pilani Hyderabad Campus, Shamirpet Telangana State 500078 India
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43
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Wu J, Ye Y, Jian J, Yao X, Li J, Tang B, Ma H, Wei M, Li W, Lin H, Li L. Reversible Thermally Driven Phase Change of Layered In 2Se 3 for Integrated Photonics. NANO LETTERS 2023. [PMID: 37405904 DOI: 10.1021/acs.nanolett.3c01247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2023]
Abstract
Two-dimensional In2Se3, an unconventional phase-change material, has drawn considerable attention for polymorphic phase transitions and electronic device applications. However, its reversible thermally driven phase transitions and potential use in photonic devices have yet to be explored. In this study, we observe the thermally driven reversible phase transitions between α and β' phases with the assistance of local strain from surface wrinkles and ripples, as well as reversible phase changes within the β phase family. These transitions lead to changes in the refractive index and other optoelectronic properties with minimal optical loss at telecommunication bands, which are crucial in integrated photonic applications such as postfabrication phase trimming. Additionally, multilayer β'-In2Se3 working as a transparent microheater proves to be a viable option for efficient thermo-optic modulation. This prototype design for layered In2Se3 offers immense potential for integrated photonics and paves the way for multilevel, nonvolatile optical memory applications.
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Affiliation(s)
- Jianghong Wu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Yuting Ye
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Jialing Jian
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Xiaoping Yao
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Junying Li
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Bo Tang
- Institute of Microelectronics, Chinese Academic Society, Beijing 100029, People's Republic of China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Maoliang Wei
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Wenbin Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
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Liu X, Niu Y, Jin D, Zeng J, Li W, Wang L, Hou Z, Feng Y, Li H, Yang H, Lee YK, French PJ, Wang Y, Zhou G. Patching sulfur vacancies: A versatile approach for achieving ultrasensitive gas sensors based on transition metal dichalcogenides. J Colloid Interface Sci 2023; 649:909-917. [PMID: 37390538 DOI: 10.1016/j.jcis.2023.06.092] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Revised: 06/07/2023] [Accepted: 06/14/2023] [Indexed: 07/02/2023]
Abstract
Transition metal dichalcogenides (TMDCs) garner significant attention for their potential to create high-performance gas sensors. Despite their favorable properties such as tunable bandgap, high carrier mobility, and large surface-to-volume ratio, the performance of TMDCs devices is compromised by sulfur vacancies, which reduce carrier mobility. To mitigate this issue, we propose a simple and universal approach for patching sulfur vacancies, wherein thiol groups are inserted to repair sulfur vacancies. The sulfur vacancy patching (SVP) approach is applied to fabricate a MoS2-based gas sensor using mechanical exfoliation and all-dry transfer methods, and the resulting 4-nitrothiophenol (4NTP) repaired molybdenum disulfide (4NTP-MoS2) is prepared via a sample solution process. Our results show that 4NTP-MoS2 exhibits higher response (increased by 200 %) to ppb-level NO2 with shorter response/recovery times (61/82 s) and better selectivity at 25 °C compared to pristine MoS2. Notably, the limit of detection (LOD) toward NO2 of 4NTP-MoS2 is 10 ppb. Kelvin probe force microscopy (KPFM) and density functional theory (DFT) reveal that the improved gas sensing performance is mainly attributed to the 4NTP-induced n-doping effect on MoS2 and the corresponding increment of surface absorption energy to NO2. Additionally, our 4NTP-induced SVP approach is universal for enhancing gas sensing properties of other TMDCs, such as MoSe2, WS2, and WSe2.
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Affiliation(s)
- Xiangcheng Liu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Yue Niu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China; School of Physical Sciences, Great Bay University, Dongguan 523000, PR China.
| | - Duo Jin
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Junwei Zeng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Wanjiang Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Lirong Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics South China Normal University, Guangzhou 510006, PR China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics South China Normal University, Guangzhou 510006, PR China
| | - Yancong Feng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Hao Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Haihong Yang
- Department of Thoracic Oncology, State Key Laboratory of Respiratory Diseases, The First Affiliated Hospital of Guangzhou Medical University, Guangzhou 510006, PR China
| | - Yi-Kuen Lee
- Department of Mechanical & Aerospace Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong Special Administrative Region
| | - Paddy J French
- BE Laboratory, EWI, Delft University of Technology, Delft 2628CD, the Netherlands
| | - Yao Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China.
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
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45
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Gutierrez-Rodriguez J, Castro M, Nieto-Jalil JM, Medina DI, Montes de Oca S, García-González JA, Rangel-Cortes E, Miralrio A. Substitutional Coinage Metals as Promising Defects for Adsorption and Detection of Gases on MoS 2 Monolayers: A Computational Approach. Int J Mol Sci 2023; 24:10284. [PMID: 37373431 DOI: 10.3390/ijms241210284] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Revised: 06/05/2023] [Accepted: 06/15/2023] [Indexed: 06/29/2023] Open
Abstract
Defective molybdenum disulfide (MoS2) monolayers (MLs) modified with coinage metal atoms (Cu, Ag and Au) embedded in sulfur vacancies are studied at a dispersion-corrected density functional level. Atmospheric constituents (H2, O2 and N2) and air pollutants (CO and NO), known as secondary greenhouse gases, are adsorbed on up to two atoms embedded into sulfur vacancies in MoS2 MLs. The adsorption energies suggest that the NO (1.44 eV) and CO (1.24 eV) are chemisorbed more strongly than O2 (1.07 eV) and N2 (0.66 eV) on the ML with a cooper atom substituting for a sulfur atom. Therefore, the adsorption of N2 and O2 does not compete with NO or CO adsorption. Besides, NO adsorbed on embedded Cu creates a new level in the band gap. In addition, it was found that the CO molecule could directly react with the pre-adsorbed O2 molecule on a Cu atom, forming the complex OOCO, via the Eley-Rideal reaction mechanism. The adsorption energies of CO, NO and O2 on Au2S2, Cu2S2 and Ag2S2 embedded into two sulfur vacancies were competitive. Charge transference occurs from the defective MoS2 ML to the adsorbed molecules, oxidizing the later ones (NO, CO and O2) since they act as acceptors. The total and projected density of states reveal that a MoS2 ML modified with copper, gold and silver dimers could be used to design electronic or magnetic devices for sensing applications in the adsorption of NO, CO and O2 molecules. Moreover, NO and O2 molecules adsorbed on MoS2-Au2s2 and MoS2-Cu2s2 introduce a transition from metallic to half-metallic behavior for applications in spintronics. These modified monolayers are expected to exhibit chemiresistive behavior, meaning their electrical resistance changes in response to the presence of NO molecules. This property makes them suitable for detecting and measuring NO concentrations. Also, modified materials with half-metal behavior could be beneficial for spintronic devices, particularly those that require spin-polarized currents.
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Affiliation(s)
- Josue Gutierrez-Rodriguez
- Escuela de Ingeniería y Ciencias, Tecnologico de Monterrey, Ave. Eugenio Garza Sada 2501, Monterrey 64849, Mexico
| | - Miguel Castro
- Departamento de Física y Química Teórica, Division de Estudios de Posgrado, Facultad de Química, Universidad Nacional Autónoma de México (UNAM), Del. Coyoacán, Ciudad de México 04510, Mexico
| | - Jose Manuel Nieto-Jalil
- Departamento de Física y Química Teórica, Division de Estudios de Posgrado, Facultad de Química, Universidad Nacional Autónoma de México (UNAM), Del. Coyoacán, Ciudad de México 04510, Mexico
| | - Dora Iliana Medina
- Tecnologico de Monterrey, Institute of Advanced Materials for Sustainable Manufacturing, Monterrey 64849, Mexico
| | - Saul Montes de Oca
- Escuela de Ingeniería y Ciencias, Tecnologico de Monterrey, Ave. Eugenio Garza Sada 2501, Monterrey 64849, Mexico
| | - José Andrés García-González
- Escuela de Ingeniería y Ciencias, Tecnologico de Monterrey, Ave. Eugenio Garza Sada 2501, Monterrey 64849, Mexico
| | - Eduardo Rangel-Cortes
- Escuela de Ingeniería y Ciencias, Tecnologico de Monterrey, Ave. Eugenio Garza Sada 2501, Monterrey 64849, Mexico
| | - Alan Miralrio
- Escuela de Ingeniería y Ciencias, Tecnologico de Monterrey, Ave. Eugenio Garza Sada 2501, Monterrey 64849, Mexico
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46
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Völzer T, Schubert A, von der Oelsnitz E, Schröer J, Barke I, Schwartz R, Watanabe K, Taniguchi T, Speller S, Korn T, Lochbrunner S. Strong quenching of dye fluorescence in monomeric perylene orange/TMDC hybrid structures. NANOSCALE ADVANCES 2023; 5:3348-3356. [PMID: 37325541 PMCID: PMC10263002 DOI: 10.1039/d3na00276d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Accepted: 05/22/2023] [Indexed: 06/17/2023]
Abstract
Hybrid structures with an interface between two different materials with properly aligned energy levels facilitate photo-induced charge separation to be exploited in optoelectronic applications. Particularly, the combination of 2D transition metal dichalcogenides (TMDCs) and dye molecules offers strong light-matter interaction, tailorable band level alignments, and high fluorescence quantum yields. In this work, we aim at the charge or energy transfer-related quenching of the fluorescence of the dye perylene orange (PO) when isolated molecules are brought onto monolayer TMDCs via thermal vapor deposition. Here, micro-photoluminescence spectroscopy revealed a strong intensity drop of the PO fluorescence. For the TMDC emission, in contrast, we observed a relative growth of the trion versus exciton contribution. In addition, fluorescence imaging lifetime microscopy quantified the intensity quenching to a factor of about 103 and demonstrated a drastic lifetime reduction from 3 ns to values much shorter than the 100 ps width of the instrument response function. From the ratio of the intensity quenching that is attributed to hole or energy transfer from dye to semiconductor, we deduce a time constant of several picoseconds at most, pointing to an efficient charge separation suitable for optoelectronic devices.
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Affiliation(s)
- Tim Völzer
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Alina Schubert
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Erik von der Oelsnitz
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Julian Schröer
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Ingo Barke
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Rico Schwartz
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan
| | - Sylvia Speller
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Tobias Korn
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
| | - Stefan Lochbrunner
- Institute of Physics, University of Rostock Albert-Einstein-Str. 23 18059 Rostock Germany
- Department "Life, Light and Matter", University of Rostock Albert-Einstein-Str. 25 18059 Rostock Germany
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47
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Wu X, Luo X, Cheng H, Yang R, Chen X. Recent progresses on ion beam irradiation induced structure and performance modulation of two-dimensional materials. NANOSCALE 2023; 15:8925-8947. [PMID: 37102719 DOI: 10.1039/d3nr01366a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Two-dimensional (2D) materials are receiving significant attention for both fundamental research and industrial applications due to their unparalleled properties and wide application potential. In this case, the controllable modulation of their structures and properties is essential for the realization and further expansion of their applications. Accordingly, ion beam irradiation techniques, with large scope to adjust parameters, high manufacturing resolution, and a series of advanced equipment being developed, have been demonstrated to have obvious advantages in manipulating the structure and performance of 2D materials. In recent years, many research efforts have been devoted to uncovering the underlying mechanism and control rules regarding ion irradiation induced phenomena in 2D materials, aiming at fulfilling their application potential as soon as possible. Herein, we review the research progress in the interaction between energetic ions and 2D materials based on the energy transfer model, type of ion source, structural modulation, performance modification of 2D materials, and then their application status, aiming to provide useful information for researchers in this field and stimulating more research advances.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Xinchun Luo
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Hailong Cheng
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Ruxue Yang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Xiyue Chen
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
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48
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Tan X, Wang S, Zhang Q, He J, Chen S, Qu Y, Liu Z, Tang Y, Liu X, Wang C, Wang Q, Liu Q. Laser doping of 2D material for precise energy band design. NANOSCALE 2023. [PMID: 37161768 DOI: 10.1039/d3nr00808h] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
The number of excellent 2D materials is finite for nano optoelectric devices including transistors, diodes, sensors, and so forth, thus the modulation of 2D materials is important to improve the performance of the current eligible 2D materials, and even to transform unqualified 2D materials into eligible 2D materials. Here we develop a fine laser doping strategy based on highly controllable laser direct writing, and investigate its effectivity and practicability by doping multilayer molybdenum ditelluride (MoTe2). Power-gradient laser doping and patterned laser doping, for the first time, are presented for designable and fine doping of 2D materials. The laser-induced polar transition of MoTe2 indicates good controllability of the method for the carrier concentration distribution in MoTe2. Multiple devices with finely tuned energy band structures are demonstrated by means of power-gradient laser doping and patterned laser doping, further illustrating the design capability of a precise energy band in 2D materials.
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Affiliation(s)
- Xiang Tan
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- Zhenjiang key laboratory of advanced sensing materials and devices, Jiangsu University, Zhenjiang 212013, PR China
| | - Shu Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Qiaoxuan Zhang
- Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001, Cangzhou, Hebei, China
| | - Juxing He
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Shengyao Chen
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute, School of Physics, Nankai University, Tianjin 300457, China
| | - Yusong Qu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Zhenzhou Liu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Science and Technology, Inner Mongolia University, Inner Mongolia 010000, China
| | - Yong Tang
- Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001, Cangzhou, Hebei, China
| | - Xintong Liu
- Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001, Cangzhou, Hebei, China
| | - Cong Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Quan Wang
- Zhenjiang key laboratory of advanced sensing materials and devices, Jiangsu University, Zhenjiang 212013, PR China
| | - Qian Liu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute, School of Physics, Nankai University, Tianjin 300457, China
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49
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Suzuki H, Liu Y, Misawa M, Nakano C, Wang Y, Nakano R, Ishimura K, Tsuruta K, Hayashi Y. Intermediate State between MoSe 2 and Janus MoSeS during Atomic Substitution Process. NANO LETTERS 2023; 23:4533-4540. [PMID: 37155295 DOI: 10.1021/acs.nanolett.3c00972] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Janus transition metal dichalcogenides (TMDCs), with dissimilar chalcogen atoms on each side of TMDCs, have garnered considerable research attention because of the out-of-plane intrinsic polarization in monolayer TMDCs. Although a plasma process has been proposed for synthesizing Janus TMDCs based on the atomic substitution of surface atoms at room temperature, the formation dynamics and intermediate electronic states have not been completely examined. In this study, we investigated the intermediate state between MoSe2 and Janus MoSeS during plasma processing. Atomic composition analysis and atomic-scale structural observations revealed the intermediate partially substituted Janus (PSJ) structure. Combined with theoretical calculations, we successfully clarified the characteristic Raman modes in the intermediate PSJ structure. The PL exhibited discontinuous transitions that could not be explained by the theoretical calculations. These findings will contribute toward understanding the formation process and electronic-state modulation of Janus TMDCs.
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Affiliation(s)
- Hiroo Suzuki
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yijun Liu
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Masaaki Misawa
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Chiyu Nakano
- Advanced Science Research Center, Okayama University, Okayama 700-8530, Japan
| | - Yingzhe Wang
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Ryo Nakano
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kentaro Ishimura
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kenji Tsuruta
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yasuhiko Hayashi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
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Zhou J, Cui J, Du S, Zhao Z, Guo J, Li S, Zhang W, Liu N, Li X, Bai Q, Guo Y, Mi S, Cheng Z, He L, Nie JC, Yang Y, Dou R. A natural indirect-to-direct band gap transition in artificially fabricated MoS 2 and MoSe 2 flowers. NANOSCALE 2023; 15:7792-7802. [PMID: 37021968 DOI: 10.1039/d3nr00477e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Twisted bilayer (tB) transition metal dichalcogenide (TMD) structures formed from two pieces of a periodic pattern overlaid with a relative twist manifest novel electronic and optical properties and correlated electronic phenomena. Here, twisted flower-like MoS2 and MoSe2 bilayers were artificially fabricated by the chemical vapor deposition (CVD) method. Photoluminescence (PL) studies demonstrated that an energy band structural transition from the indirect gap to the direct gap happened in the region away from the flower center in tB MoS2 (MoSe2) flower patterns, accompanied by an enhanced PL intensity. The indirect-to-direct-gap transition in the tB-MoS2 (MoSe2) flower dominantly originated from a gradually enlarged interlayer spacing and thus, interlayer decoupling during the spiral growth of tB flower patterns. Meanwhile, the expanded interlayer spacing resulted in a decreased effective mass of the electrons. This means that the charged exciton (trion) population was reduced and the neutral exciton density was increased to obtain the upgraded PL intensity in the off-center region. Our experimental results were further evidenced by the density functional theory (DFT) calculations of the energy band structures and the effective masses of electrons and holes for the artificial tB-MoS2 flower with different interlayer spacings. The single-layer behavior of tB flower-like homobilayers provided a viable route to finely manipulate the energy band gap and the corresponding exotic optical properties by locally tuning the stacked structures and to satisfy the real requirement in TMD-based optoelectronic devices.
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Affiliation(s)
- Jun Zhou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Juan Cui
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Shuo Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zihan Zhao
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Jianfeng Guo
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Songyang Li
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Xiaotian Li
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Qinghu Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shuo Mi
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Zhihai Cheng
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Lin He
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - J C Nie
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Yu Yang
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Ruifen Dou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
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