Large, non-saturating magnetoresistance in WTe2

Effects of electronic correlation on topological properties of Kagome semimetal Ni3In2S2

Kagome metals gain attention as they manifest a spectrum of quantum phenomena such as superconductivity, charge order, frustrated magnetism, and allied correlated states of condensed matter. With regard to electronic band structure, several of them exhibit non-trivial topological characteristics. Here, we present a thorough investigation on the growth and the physical properties of single crystals of Ni3In2S2which is established to be a Dirac nodal line Kagome semimetal. Extensive characterization is attained through temperature and field-dependent resistivity, angle-dependent magnetoresistance (MR) and specific heat measurements. The central question we seek to address is the effect of electronic correlations in suppressing the manifestation of topological characteristics. In most metals, the Fermi liquid behaviour is restricted to a narrow range of temperatures. Here, we show that Ni3In2S2follows the Fermi-liquid behaviour up to 86 K. This phenomenon is further supported by a high Kadowaki-Woods ratio obtained through specific heat analysis. Different interpretations of the magneto-transport study reveal that MR exhibits linear behaviour, suggesting the presence of Dirac fermions at lower temperatures. The angle-dependent magneto-transport study obeys the Voigt-Thomson formula. This, on the contrary, implies the classical origin of MR. Thus, the effect of strong electron correlation in Ni3In2S2manifests itself in the anisotropic magneto-transport. Furthermore, the magnetization measurement shows the presence of de-Haas van Alphen oscillations. Calculations of the Berry phase provide insights into the topological features in the Kagome semimetal Ni3In2S2.

Doubling Power Conversion Efficiency of Si Solar Cells

Improving solar cells' power conversion efficiency (PCE) is crucial to further the deployment of renewable electricity. In addition, solar cells cannot function at exceedingly low temperatures owing to the carrier freeze-out phenomenon. This report demonstrates that through temperature regulation, the PCE of monocrystalline single-junction silicon solar cells can be doubled to 50-60% under monochromatic lasers and the full spectrum of AM 1.5 light at low temperatures of 30-50 K by inhibiting the lattice atoms' thermal oscillations for suppressing thermal loss, an inherent feature of monocrystalline Si cells. Moreover, the light penetration, determined by its wavelength, plays a critical role in alleviating the carrier freeze-out effect and broadening the operational temperature range of silicon cells to temperatures as low as 10 K. Understanding these new observations opens tremendous opportunities for designing solar cells with even higher PCE to provide efficient and powerful energy sources for cryogenic devices and outer and deep space explorations.

Quantum-Confined Lifshitz Transition on Weyl Semimetal Td-MoTe2

Adsorption of alkali atoms onto material surfaces is widely utilized for controlling electronic properties and is particularly effective for two-dimensional materials. While tuning the chemical potential and band gap and creating quantum-confined states are well established for alkali adsorption on semiconductors, the effects on semimetallic systems remain largely elusive. Here, utilizing angle-resolved photoemission spectroscopy measurements and density functional theory calculations, we disclose the creation of two-dimensional electron gas and the quantum-confined Lifshitz transition at the surface of a Weyl semimetal Td-MoTe2 by potassium adsorption. Electrons from potassium adatoms are shown to be transferred mainly to the lowest unoccupied band within the gapped part of the Brillouin zone, which, in turn, induces strong surface band bending and quantum confinement in the topmost layer. The quantum-confined topmost layer evolves from a semimetal to a strong metal with a Lifshitz transition departing substantially from the bulk band. The present finding and its underlying mechanism can be exploited for the creation of electronic heterojunctions in van der Waals semimetals.

Polarized Raman Study of First-Order Phonons in Self-Flux Grown Single-Crystalline WTe2

Bulk single crystals of WTe2 were grown by the self-flux method and characterized by X-ray diffraction, polarized micro-Raman spectroscopy, and optical microscopy. All methods revealed a high crystalline quality, thus demonstrating the advantages of the growth method used as a starting base for the synthesis of high-quality 2D materials. In each main scattering configuration, we recorded a series of Raman spectra in different sample orientations achieved by rotating the sample around the incident laser beam. In addition to the well-established case of excitation along the c crystal axis, we also applied laser excitation along the a and b axes. Thus, scattering configurations were also realized in the XZ and YZ polarization planes, for which no comparative literature data have yet been established. In these experiments, two new Raman-active phonons with B2 symmetry and frequencies of 89 cm-1 and 122 cm-1 were identified. The obtained experimental data enabled us to derive the magnitude ratios of all three tensor elements of the A1 modes and to find their phase differences.

Extremely large magnetoresistance in twisted intertwined graphene spirals

Extremely large magnetoresistance (XMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, XMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moiré system, which demonstrates XMR owing to its topological structure and high-quality crystal formation. We investigate the electronic properties of three-dimensional intertwined twisted graphene spirals (TGS), manipulating the screw dislocation axis to achieve a rotation angle of 7.3°. Notably, at 14 T and 2 K, the magnetoresistance of these structures reaches 1.7 × 107%, accompanied by a metal-insulator transition as the temperature increases. This transition becomes noticeable when the magnetic field exceeds a minimal threshold of approximately 0.1 T. These observations suggest the possible existence of complex, correlated states within the partially filled three-dimensional Landau levels of the 3D TGS system. Our findings open up possibilities for achieving XMR by engineering the topological structure of 2D layered moiré systems.

Bias-dependent photoresponse of Td-WTe2grown by chemical vapor deposition

The type-II Weyl semimetal Td-WTe2is one of the wonder materials for high-performance optoelectronic devices. We report the self-powered Td-WTe2photodetectors and their bias-dependent photoresponse in the visible region (405, 520, 638 nm) driven by the bulk photovoltaic effect. The device shows the responsivity of 15.8 mAW-1and detectivity of 5.2 × 109Jones at 520 nm. Besides, the response time of the WTe2photodetector shows the strong bias-voltage dependent property. This work offers a physical reference for understanding the photoresponse process of Td-WTe2photodetectors.

Exploring Anisotropic Carrier Transport in WSe2-WTe2 Superlattices: A Computational Study

Superlattice structures offer distinct benefits in modern semiconductor technology, enabling the development of a deeper understanding of their sublayer arising from the interfaces. However, the advancement of large-scale applications encounters additional concerns, such as the stability and performance of the superlattice. In this study, we employ density functional theory calculations combined with the Boltzmann transport theory to comprehensively analyze the electronic structural and transport properties of the hexagonal phase of WSe2 and the WSe2-WTe2 superlattice for their applications in carrier transport fields. Previous studies showed that longitudinal acoustics phonon limited carrier mobility determined by deformation potential theory (DPT) often compromises the accuracy and overestimates the relaxation time by 2 orders. Herein, we conduct an in-depth analysis of band structural and transport properties, addressing the aforementioned inconsistency by exclusively incorporating scattering from longitudinal optical phonons to accurately compute mobility using the Fröhlich interaction. Our findings reveal a significant enhancement in mobility for both electrons and holes in the WSe2-WTe2 superlattice, reaching 545 and 476 cm2 V-1 s-1, respectively, compared to 104 and 132 cm2 V-1 s-1 for WSe2, which suggests that this superlattice is a promising material for electronics and transport applications.

Semi-classical origin of the extreme magnetoresistance in PtSn4

The so-called "extreme magnetoresistance" (XMR) found in few conductors poses interesting conceptual challenges which address needs in technology. In contrast to the more common XMR in semi-metals, PtSn4 stands out as a rare example of a high carrier density multi-band metal exhibiting XMR, sparking an active debate about its microscopic origin. Here we report a sharp sensitivity of its XMR upon the field angle, with an almost complete collapse only for one specific current and field direction (B//b, I//a). Corroborated by band-structure calculations, we identify a singular open orbit on one of its Fermi surface sheets as the origin of this collapse. This remarkably switchable XMR resolves the puzzle in PtSn4 as a semi-classical effect of an ultra-pure, compensated carrier metal. It further showcases the importance of Ockham's razor in uncommon magnetotransport phenomena and demonstrates the remarkable physical properties conventional metals can exhibit given they are superbly clean.

Observation of Linear Magnetoresistance in MoO2

Magnetoresistance, the change in resistance with applied magnetic fields, is crucial to the magnetic sensor technology. Linear magnetoresistance has been intensively studied in semimetals and semiconductors. However, the air-stable oxides with a large linear magnetoresistance are highly desirable but remain to be fully explored. In this paper, we report the direct observation of linear magnetoresistance in polycrystalline MoO2 without any sign of saturation up to 7 T under 50 K. Interestingly, the linear magnetoresistance reaches as large as 1500% under 7 T at 2 K. The linear field dependence is in great contrast to the parabolic behavior observed in single-crystal MoO2, probably due to phonon scattering near the grain boundaries. Our results pave the way to comprehending magneto-transport behavior in oxides and their potential applications in magnetic sensors.

Advances in Flexible Magnetosensitive Materials and Devices for Wearable Electronics

Emerging fields, such as wearable electronics, digital healthcare, the Internet of Things, and humanoid robots, highlight the need for flexible devices capable of recording signals on curved surfaces and soft objects. In particular, flexible magnetosensitive devices garner significant attention owing to their ability to combine the advantages of flexible electronics and magnetoelectronic devices, such as reshaping capability, conformability, contactless sensing, and navigation capability. Several key challenges must be addressed to develop well-functional flexible magnetic devices. These include determining how to make magnetic materials flexible and even elastic, understanding how the physical properties of magnetic films change under external strain and stress, and designing and constructing flexible magnetosensitive devices. In recent years, significant progress is made in addressing these challenges. This study aims to provide a timely and comprehensive overview of the most recent developments in flexible magnetosensitive devices. This includes discussions on the fabrications and mechanical regulations of flexible magnetic materials, the principles and performances of flexible magnetic sensors, and their applications for wearable electronics. In addition, future development trends and challenges in this field are discussed.

Giant Terahertz Birefringence in an Ultrathin Anisotropic Semimetal

Manipulating the polarization of light at the nanoscale is key to the development of next-generation optoelectronic devices. This is typically done via waveplates using optically anisotropic crystals, with thicknesses on the order of the wavelength. Here, using a novel ultrafast electron-beam-based technique sensitive to transient near fields at THz frequencies, we observe a giant anisotropy in the linear optical response in the semimetal WTe2 and demonstrate that one can tune the THz polarization using a 50 nm thick film, acting as a broadband wave plate with thickness 3 orders of magnitude smaller than the wavelength. The observed circular deflections of the electron beam are consistent with simulations tracking the trajectory of the electron beam in the near field of the THz pulse. This finding offers a promising approach to enable atomically thin THz polarization control using anisotropic semimetals and defines new approaches for characterizing THz near-field optical response at far-subwavelength length scales.

Ratio of 4:1 between ZnGeAs2and MnAs phases in a single composite and its impact on the structure-driven magnetoresistance

A strong influence of the lattice degree of freedom on magnetoresistance (MR) under high pressure underlies the conception of 'structure-driven' magnetoresistance (SDMR). In most magnetic or topological materials, the suppression of MR with increasing pressure is a general trend, while for some magnetic composites the MR enhances and even shows unusual behavior as a consequence of structural transition. Here we investigated the SDMR in the composite material based on the ZnGeAs2semiconductor matrix and MnAs magnetic inclusions in a phase ratio of 4:1. At ambient pressure, its magnetic and transport properties are governed by MnAs inclusions, i.e. it shows a Curie temperatureTC≈ 320 K and metallic-like conductivity. Under high pressure, the low-field room temperature MR undergoes multiple changes in the pressure range up to 7.2 GPa. The structural transition in the ZnGeAs2matrix has been found at ∼6 GPa, slightly lower than in the pure ZnGeAs2(6.2 GPa). The huge SDMR as high as 85% at 6.8 GPa and 2.5 kOe, which contains both positive and negative MR components, is accompanied by a pressure-induced metallic-like-to-semiconductor-like transition and the enhanced ferromagnetic order of MnAs inclusions. This observation offers a competing mechanism between the robust extrinsic ferromagnetism and high-pressure electronic properties of ZnGeAs2.

High-Mobility Compensated Semimetals, Orbital Magnetization, and Umklapp Scattering in Bilayer Graphene Moiré Superlattices

Twist-controlled moiré superlattices (MSs) have emerged as a versatile platform for realizing artificial systems with complex electronic spectra. The combination of Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) can give rise to an interesting MS, which has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and the electronic ratchet effect. Yet, the understanding of the electronic properties of BLG/hBN MS has, at present, remained fairly limited. Here, we combine magneto-transport and low-energy sub-THz excitation to gain insights into the properties of this MS. We demonstrate that the alignment between BLG and hBN crystal lattices results in the emergence of compensated semimetals at some integer fillings of the moiré bands, separated by van Hove singularities where the Lifshitz transition occurs. A particularly pronounced semimetal develops when eight holes reside in the moiré unit cell, where coexisting high-mobility electron and hole systems feature strong magnetoresistance reaching 2350% already at B = 0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, indicating an orbital magnetization characterized by a strongly enhanced effective gv-factor of 340. Finally, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multifaceted analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in van der Waals materials and provides a comprehensive understanding of the BLG/hBN MS.

Thickness-Dependent Magnetic Breakdown in ZrSiSe Nanoplates

We report a study of thickness-dependent interband and intraband magnetic breakdown by thermoelectric quantum oscillations in ZrSiSe nanoplates. Under high magnetic fields of up to 30 T, quantum oscillations arising from degenerated hole pockets were observed in thick ZrSiSe nanoplates. However, when decreasing the thickness, plentiful multifrequency quantum oscillations originating from hole and electron pockets are captured. These multiple frequencies can be explained by the emergent interband magnetic breakdown enclosing individual hole and electron pockets and intraband magnetic breakdown within spin-orbit coupling (SOC) induced saddle-shaped electron pockets, resulting in the enhanced contribution to thermal transport in thin ZrSiSe nanoplates. These experimental frequencies agree well with theoretical calculations of the intriguing tunneling processes. Our results introduce a new member of magnetic breakdown to the field and open up a dimension for modulating magnetic breakdown, which holds fundamental significance for both low-dimensional topological materials and the physics of magnetic breakdown.

Emerging Nonlinear Photocurrents in Lead Halide Perovskites for Spintronics

Lead halide perovskites (LHPs) containing organic parts are emerging optoelectronic materials with a wide range of applications thanks to their high optical absorption, carrier mobility, and easy preparation methods. They possess spin-dependent properties, such as strong spin-orbit coupling (SOC), and are promising for spintronics. The Rashba effect in LHPs can be manipulated by a magnetic field and a polarized light field. Considering the surfaces and interfaces of LHPs, light polarization-dependent optoelectronics of LHPs has attracted attention, especially in terms of spin-dependent photocurrents (SDPs). Currently, there are intense efforts being made in the identification and separation of SDPs and spin-to-charge interconversion in LHP. Here, we provide a comprehensive review of second-order nonlinear photocurrents in LHP in regard to spintronics. First, a detailed background on Rashba SOC and its related effects (including the inverse Rashba-Edelstein effect) is given. Subsequently, nonlinear photo-induced effects leading to SDPs are presented. Then, SDPs due to the photo-induced inverse spin Hall effect and the circular photogalvanic effect, together with photocurrent due to the photon drag effect, are compared. This is followed by the main focus of nonlinear photocurrents in LHPs containing organic parts, starting from fundamentals related to spin-dependent optoelectronics. Finally, we conclude with a brief summary and future prospects.

Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides

Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.

Metal telluride nanosheets by scalable solid lithiation and exfoliation

Transition metal tellurides (TMTs) have been ideal materials for exploring exotic properties in condensed-matter physics, chemistry and materials science1-3. Although TMT nanosheets have been produced by top-down exfoliation, their scale is below the gram level and requires a long processing time, restricting their effective application from laboratory to market4-8. We report the fast and scalable synthesis of a wide variety of MTe2 (M = Nb, Mo, W, Ta, Ti) nanosheets by the solid lithiation of bulk MTe2 within 10 min and their subsequent hydrolysis within seconds. Using NbTe2 as a representative, we produced more than a hundred grams (108 g) of NbTe2 nanosheets with 3.2 nm mean thickness, 6.2 µm mean lateral size and a high yield (>80%). Several interesting quantum phenomena, such as quantum oscillations and giant magnetoresistance, were observed that are generally restricted to highly crystalline MTe2 nanosheets. The TMT nanosheets also perform well as electrocatalysts for lithium-oxygen batteries and electrodes for microsupercapacitors (MSCs). Moreover, this synthesis method is efficient for preparing alloyed telluride, selenide and sulfide nanosheets. Our work opens new opportunities for the universal and scalable synthesis of TMT nanosheets for exploring new quantum phenomena, potential applications and commercialization.

Manipulation of Weyl Points in Reciprocal and Nonreciprocal Mechanical Lattices

We introduce feedback-measurement technologies to achieve flexible control of Weyl points and conduct the first experimental demonstration of Weyl type I-II transition in mechanical systems. We demonstrate that non-Hermiticity can expand the Fermi arc surface states from connecting Weyl points to Weyl rings, and lead to a localization transition of edge states influenced by the interplay between band topology and the non-Hermitian skin effect. Our findings offer valuable insights into the design and manipulation of Weyl points in mechanical systems, providing a promising avenue for manipulating topological modes in non-Hermitian systems.

Phase transition in WSe2-xTex monolayers driven by charge injection and pressure: a first-principles study

Alloying strategies permit new probes for governing structural stability and semiconductor-semimetal phase transition of transition metal dichalcogenides (TMDs). However, the possible structure and phase transition mechanism of the alloy TMDs, and the effect of an external field, have been still unclear. Here, the enrichment of the Te content in WSe2-xTex monolayers allows for coherent structural transition from the H phase to the T' phase. The crystal orbital Hamiltonian population (COHP) uncovers that the bonding state of the H phase approaches the high-energy domain near the Fermi level as the Te concentration increases, posing a source of structural instability followed by a weakened energy barrier for the phase transition. In addition, the structural phase transition driven by charge injection opens up new possibilities for the development of phase-change devices based on atomic thin films. For WSe2-xTex monolayers with the H phase as the stable phase, the critical value of electron concentration triggering the phase transition decreases with an increase in the x value. Furthermore, the energy barrier from the H phase to the T' phase can be effectively reduced by applying tensile strain, which could favor the phase switching in electronic devices. This work provides a critical reference for controllable modulation of phase-sensitive devices from alloy materials with rich phase characteristics.

Demonstration and imaging of cryogenic magneto-thermoelectric cooling in a van der Waals semimetal

Attaining viable thermoelectric cooling at cryogenic temperatures is of considerable fundamental and technological interest for electronics and quantum materials applications. In-device temperature control can provide more efficient and precise thermal environment management compared with conventional global cooling. The application of a current and perpendicular magnetic field gives rise to cooling by generating electron-hole pairs on one side of the sample and to heating due to their recombination on the opposite side, which is known as the Ettingshausen effect. Here we develop nanoscale cryogenic imaging of the magneto-thermoelectric effect and demonstrate absolute cooling and an Ettingshausen effect in exfoliated WTe2 Weyl semimetal flakes at liquid He temperatures. In contrast to bulk materials, the cooling is non-monotonic with respect to the magnetic field and device size. Our model of magneto-thermoelectricity in mesoscopic semimetal devices shows that the cooling efficiency and the induced temperature profiles are governed by the interplay between sample geometry, electron-hole recombination length, magnetic field, and flake and substrate heat conductivities. The observations open the way for the direct integration of microscopic thermoelectric cooling and for temperature landscape engineering in van der Waals devices.

Quantifying the thickness of WTe2 using atomic-resolution STEM simulations and supervised machine learning

For two-dimensional (2D) materials, the exact thickness of the material often dictates its physical and chemical properties. The 2D quantum material WTe2 possesses properties that vary significantly from a single layer to multiple layers, yet it has a complicated crystal structure that makes it difficult to differentiate thicknesses in atomic-resolution images. Furthermore, its air sensitivity and susceptibility to electron beam-induced damage heighten the need for direct ways to determine the thickness and atomic structure without acquiring multiple measurements or transferring samples in ambient atmosphere. Here, we demonstrate a new method to identify the thickness up to ten van der Waals layers in Td-WTe2 using atomic-resolution high-angle annular dark-field scanning transmission electron microscopy image simulation. Our approach is based on analyzing the intensity line profiles of overlapping atomic columns and building a standard neural network model from the line profile features. We observe that it is possible to clearly distinguish between even and odd thicknesses (up to seven layers), without using machine learning, by comparing the deconvoluted peak intensity ratios or the area ratios. The standard neural network model trained on the line profile features allows thicknesses to be distinguished up to ten layers and exhibits an accuracy of up to 94% in the presence of Gaussian and Poisson noise. This method efficiently quantifies thicknesses in Td-WTe2, can be extended to related 2D materials, and provides a pathway to characterize precise atomic structures, including local thickness variations and atomic defects, for few-layer 2D materials with overlapping atomic column positions.

Unusual multiple magnetic transitions and anomalous Hall effect observed in antiferromagnetic Weyl semimetal, Mn2.94Ge (Ge-rich)

We report on the magnetic and Hall effect measurements of the magnetic Weyl semimetal, Mn2.94Ge (Ge-rich) single crystal. From the magnetic properties study, we identify unusual multiple magnetic transitions below the Ne'el temperature of 353 K, such as the spin-reorientation (TSR) and ferromagnetic-like transitions. Consistent with the magnetic properties, the Hall effect study shows unusual behavior around the spin-reorientation transition. Specifically, the anomalous Hall conductivity increases with increasing temperature, reaching a maximum atTSR, which then gradually decreases with increasing temperature. This observation is quite in contrast to the Mn3+δGe (Mn-rich) system, though both compositions share the same hexagonal crystal symmetry. This study unravels the sensitivity of magnetic and topological properties on the Mn concentration.

Colossal Magnetoresistance in Layered Diluted Magnetic Semiconductor Rb(Zn,Li,Mn)4As3 Single Crystals

Diluted magnetic semiconductors (DMSs) with tunable ferromagnetism are among the most promising materials for fabricating spintronic devices. Some DMS systems have sizeable magnetoresistances that can further extend their applications. Here, we report a new DMS Rb(Zn1-x-yLiyMnx)4As3 with a quasi-two-dimensional structure showing sizeable anisotropies in its ferromagnetism and transverse magnetoresistance (MR). With proper charge and spin doping, single crystals of the DMS display Curie temperatures up to 24 K. Analysis of the critical behavior via Arrott plots confirms the long-range ferromagnetic ordering in the Rb(Zn1-x-yLiyMnx)4As3 single crystals. We observed remarkable intrinsic MR effects in the single crystals (i.e., a positive MR of 85% at 0.4 T and a colossal negative MR of -93% at 7 T).

Magnetoresistive-coupled transistor using the Weyl semimetal NbP

Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properties of such devices-attenuation of the electric field, and limited mobility and charge carrier density in semiconductor channels. In this work, we demonstrate a new type of transistor that operates through a different mechanism. The channel material is a Weyl semimetal, NbP, whose resistivity is modulated via a magnetic field generated by an integrated superconductor. Due to the exceptionally large electron mobility of this material, which reaches over 1,000,000 cm2/Vs, and the strong magnetoresistive coupling, the transistor can generate significant transconductance amplification at nanowatt levels of power. This type of device can enable new low-power amplifiers, suitable for qubit readout operation in quantum computers.

Twistronics in two-dimensional transition metal dichalcogenide (TMD)-based van der Waals interface

Transition metal dichalcogenides (TMD) based heterostructures have gained significant attention lately because of their distinct physical properties and potential uses in electronics and optoelectronics. In the present work, the effects of twist on the structural, electronic, and optical properties (such as the static dielectric constant, refractive index, extinction coefficient, and absorption coefficient) of vertically stacked TMD heterostructures, namely MoSe2/WSe2, WS2/WSe2, MoSe2/WS2 and MoS2/WSe2, have been systematically studied and a thorough comparison is done among these heterostructures. In addition, the absence of negative frequency in the phonon dispersion curve and a low formation energy confirm the structural and thermodynamical stability of all the proposed TMD heterostructures. The calculations are performed using first-principles-based density functional theory (DFT) method. Beautiful Moiré patterns are formed due to the relative rotation of the layers as a consequence of the superposition of the periodic structures of the TMDs on each other. Twist engineering allows the modulation of bandgaps and a phase change from direct to indirect band gap semiconductors as well. The high optical absorption in the visible range of spectrum makes these twisted heterostructures very promising candidates in photovoltaic applications.

Two-dimensional heavy fermions in the van der Waals metal CeSiI

Heavy-fermion metals are prototype systems for observing emergent quantum phases driven by electronic interactions1-6. A long-standing aspiration is the dimensional reduction of these materials to exert control over their quantum phases7-11, which remains a significant challenge because traditional intermetallic heavy-fermion compounds have three-dimensional atomic and electronic structures. Here we report comprehensive thermodynamic and spectroscopic evidence of an antiferromagnetically ordered heavy-fermion ground state in CeSiI, an intermetallic comprising two-dimensional (2D) metallic sheets held together by weak interlayer van der Waals (vdW) interactions. Owing to its vdW nature, CeSiI has a quasi-2D electronic structure, and we can control its physical dimension through exfoliation. The emergence of coherent hybridization of f and conduction electrons at low temperature is supported by the temperature evolution of angle-resolved photoemission and scanning tunnelling spectra near the Fermi level and by heat capacity measurements. Electrical transport measurements on few-layer flakes reveal heavy-fermion behaviour and magnetic order down to the ultra-thin regime. Our work establishes CeSiI and related materials as a unique platform for studying dimensionally confined heavy fermions in bulk crystals and employing 2D device fabrication techniques and vdW heterostructures12 to manipulate the interplay between Kondo screening, magnetic order and proximity effects.

High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect

The quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science over recent decades. Recently, the discovery of a novel class of materials-the topological semimetals-has led to a growing interest in the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure, and carrier mobility in recently discovered high carrier mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. Their large magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The possibility of designing novel quantum sensors and devices based on solid-state semimetals is also examined.

SdH Oscillations from the Dirac Surface State in the Fermi-Arc Antiferromagnet NdBi

The recent progress in CuMnAs and Mn3X (X = Sn, Ge, Pt) shows that antiferromagnets (AFMs) provide a promising platform for advanced spintronics device innovations. Most recently, a switchable Fermi-arc is discovered by the ARPES technique in antiferromagnet NdBi, but the knowledge about electron-transport property and the manipulability of the magnetic structure in NdBi is still vacant to date. In this study, SdH oscillations are successfully verified from the Dirac surface states (SSs) with 2-dimensionality and nonzero Berry phase. Particularly, it is observed that the spin-flop transition only appears when the external magnetical field is applied along [001] direction, and features obvious hysteresis for the first time in NdBi, which provides a powerful handle for adjusting the spin texture in NdBi. Crucially, the DFT shows the Dirac cone and the Fermi arc strongly depend on the high-order magnetic structure of NdBi and further reveals the orbital magnetic moment of Nd plays a crucial role in fostering the peculiar SSs, leading to unveil the mystery of the band-splitting effect and to manipulate the electronic transport, high-effectively, in the thin film works in NdBi. It is believed that this study provides important guidance for the development of new antiferromagnet-based spintronics devices based on cutting-edge rare-earth monopnictides.

Polarization-Sensitive Detector Based on MoTe2/WTe2 Heterojunction for Broadband Optoelectronic Imaging

Polarization-sensitive detectors have significant applications in modern communication and information processing. In this study. We present a polarization-sensitive detector based on a MoTe2/WTe2 heterojunction, where WTe2 forms a favorable bandgap structure with MoTe2 after forming the heterojunction. This enhances the carrier separation efficiency and photoelectric response. We successfully achieved wide spectral detection ranging from visible to near-infrared light. Specifically, under zero bias, our photodetector exhibits a responsivity (R) of 0.6 A/W and a detectivity (D*) of 3.6 × 1013 Jones for 635 nm laser illumination. Moreover, the photoswitching ratio can approach approximately 6.3 × 105. Importantly, the polarization sensitivity can reach 3.5 (5.2) at 635 (1310) nm polarized light at zero bias. This study both unveils potential for utilizing MoTe2/WTe2 heterojunctions as polarization-sensitive detectors and provides novel insights for developing high-performance optoelectronic devices.

Electronic structure in a transition metal dipnictide TaAs2

The family of transition-metal dipnictides has been of theoretical and experimental interest because this family hosts topological states and extremely large magnetoresistance (MR). Recently,TaAs2, a member of this family, has been predicted to support a topological crystalline insulating state. Here, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we reveal both closed and open pockets in the metallic Fermi surface (FS) and linearly dispersive bands on the (2‾01) surface, along with the presence of extreme MR observed from magneto-transport measurements. A comparison of the ARPES results with first-principles computations shows that the linearly dispersive bands on the measured surface ofTaAs2are trivial bulk bands. The absence of symmetry-protected surface state on the (2‾01) surface indicates its topologically dark nature. The presence of open FS features suggests that the open-orbit fermiology could contribute to the extremely large MR ofTaAs2.

Fe Site Order and Magnetic Properties of Fe1/4NbS2

Transition-metal dichalcogenides (TMDs) have long been attractive to researchers for their diverse properties and high degree of tunability. Most recently, interest in magnetically intercalated TMDs has resurged due to their potential applications in spintronic devices. While certain compositions featuring the absence of inversion symmetry such as Fe1/3NbS2 and Cr1/3NbS2 have garnered the most attention, the diverse compositional space afforded through the host matrix composition as well as intercalant identity and concentration is large and remains relatively underexplored. Here, we report the magnetic ground state of Fe1/4NbS2 that was determined from low-temperature neutron powder diffraction as an A-type antiferromagnet. Despite the presence of overall inversion symmetry, the pristine compound manifests spin polarization induced by the antiferromagnetic order at generic k points, based on density functional theory band-structure calculations. Furthermore, by combining synchrotron diffraction, pair distribution function, and magnetic susceptibility measurements, we find that the magnetic properties of Fe1/4NbS2 are sensitive to the Fe site order, which can be tuned via electrochemical lithiation and thermal history.

Cryogenic spectroscopic imaging scanning tunnelling microscope in a water-cooled magnet down to 1.7 K

Spectroscopic-imaging scanning tunnelling microscope (SI-STM) in a water-cooled magnet (WM) at low temperature has long been desirable in the condensed matter physics area since it is crucial for addressing various scientific problems, such as the behaviour of Cooper electrons crossing Hc2 in a high-temperature superconductor. Here we report on the construction and performance of the first atomically resolved cryogenic SI-STM in a WM. It operates at low temperatures of down to 1.7 K and in magnetic fields of up to 22 T (the WM's upper safety limit). The WM-SI-STM unit features a high-stiffness sapphire-based frame with the lowest eigenfrequency being 16 kHz. A slender piezoelectric scan tube (PST) is coaxially embedded in and glued to the frame. A well-polished zirconia shaft is spring-clamped onto the gold-coated inner wall of the PST to serve both the stepper and the scanner. The microscope unit as a whole is elastically suspended in a tubular sample space inside a 1K-cryostat by a two-stage internal passive vibrational reduction system, achieving a base temperature below 2 K in a static exchange gas. We demonstrate the SI-STM by imaging TaS2 at 50 K and FeSe at 1.7 K. Detecting the well-defined superconducting gap of FeSe, an iron-based superconductor, at variable magnetic fields demonstrates the device's spectroscopic imaging capability. The maximum noise intensity at the typical frequency is 3 pA per square root Hz at 22 T, which is only slightly worse than at 0 T, indicating the insensitivity of the STM to harsh conditions. In addition, our work shows the potential of SI-STMs for use in a WM and hybrid magnet with a 50 mm-bore size where high fields can be generated.

Symmetry Engineering in Twisted Bilayer WTe2

The fabrication of artificial structures using a twisted van der Waals assembly has been a key technique for recent advancements in the research of two-dimensional (2D) materials. To date, various exotic phenomena have been observed thanks to the modified electron correlation or moiré structure controlled by the twist angle. However, the twisted van der Waals assembly has further potential to modulate the physical properties by controlling the symmetry. In this study, we fabricated twisted bilayer WTe2 and demonstrated that the twist angle successfully controls the spatial inversion symmetry and hence the spin splitting in the band structure. Our results reveal the further potential of a twisted van der Waals assembly, suggesting the feasibility of pursuing new physical phenomena in 2D materials based on the control of symmetry.

Controlled synthesis of van der Waals CoS2for improved p-type transistor contact

Two-dimensional (2D) van der Waals (vdW) p-type semiconductors have shown attractive application prospects as atomically thin channels in electronic devices. However, the high Schottky hole barrier of p-type semiconductor-metal contacts induced by Fermi-level pinning is hardly removed. Herein, we prepare a vdW 1T-CoS2nanosheet as the contact electrode of a WSe2field-effect transistor (FET), which shows a considerably high on/off ratio > 107and a hole mobility of ∼114.5 cm2V-1s-1. The CoS2nanosheets exhibit metallic conductivity with thickness dependence, which surpasses most 2D transition metal dichalcogenide metals or semimetals. The excellent FET performance of the CoS2-contacted WSe2FET device can be attributed to the high work function of CoS2, which lowers the Schottky hole barrier. Our work provides an effective method for growing vdW CoS2and opens up more possibilities for the application of 2D p-type semiconductors in electronic devices.

Colossal magnetoresistance in the multiple wave vector charge density wave regime of an antiferromagnetic Dirac semimetal

Colossal negative magnetoresistance is a well-known phenomenon, notably observed in hole-doped ferromagnetic manganites. It remains a major research topic due to its potential in technological applications. In contrast, topological semimetals show large but positive magnetoresistance, originated from the high-mobility charge carriers. Here, we show that in the highly electron-doped region, the Dirac semimetal CeSbTe demonstrates similar properties as the manganites. CeSb0.11Te1.90 hosts multiple charge density wave modulation vectors and has a complex magnetic phase diagram. We confirm that this compound is an antiferromagnetic Dirac semimetal. Despite having a metallic Fermi surface, the electronic transport properties are semiconductor-like and deviate from known theoretical models. An external magnetic field induces a semiconductor metal-like transition, which results in a colossal negative magnetoresistance. Moreover, signatures of the coupling between the charge density wave and a spin modulation are observed in resistivity. This spin modulation also produces a giant anomalous Hall response.

Surface engineering of two-dimensional hexagonal boron-nitride for optoelectronic devices

Two-dimensional hexagonal boron nitride (2D h-BN) is being extensively studied in optoelectronic devices due to its electronic and photonic properties. However, the controlled optimization of h-BN's insulating properties is necessary to fully explore its potential in energy conversion and storage devices. In this work, we engineered the surface of h-BN nanoflakes via one-step in situ chemical functionalization using a liquid-phase exfoliation approach. The functionalized h-BN (F-h-BN) nanoflakes were subsequently dispersed on the surface of TiO2 to tune the TiO2/QDs interface of the optoelectronic device. The photoelectrochemical (PEC) devices based on TiO2/F-h-BN/QDs with optimized addition of carbon nanotubes (CNTs) and scattering layers showed 46% improvement compared to the control device (TiO2/QDs). This significant improvement is attributed to the reduced trap/carrier recombination and enhanced carrier injection rate of the TiO2-CNTs/F-h-BN/QDs photoanode. Furthermore, by employing an optimized TiO2-CNTs/F-h-BN/QDs photoanode, QDs-sensitized solar cells (QDSCs) yield an 18% improvement in photoconversion efficiency. This represents a potential and adaptability of our approach, and pathway to explore surface-engineered 2D materials to optimize the interface of solar energy conversion and other emerging optoelectronic devices.

Anisotropic magnetoresistance and electronic features of the candidate topological compound praseodymium monobismuthide

PrBi, a sister member of the rare-earth monopnictide family, is an excellent candidate for studying extreme magnetoresistance and nontrivial topological electronic states. In this study, we perform angular magnetoresistance measurements as well as bulk and surface band structure calculations on this compound. PrBi's magnetoresistance is revealed to be significantly angle-dependent and shows a fourfold symmetry as always observed in the nonmagnetic isostructural counterparts, including LaSb, LaBi, and LuBi. Its angular magnetoresistance can be reproduced well using the semiclassical two-band model. The deduced parameters suggest that PrBi hosts an elongated electron pocket with a mobility anisotropy of ∼3.13 and is slightly uncompensated in its carrier concentration. Our bulk and surface band structure calculations confirm the anisotropic electronic features. Moreover, we reveal that a nodal-line-shaped surface state appears at the X̄ point, and is associated with the quadratic dispersion along the -X̄ direction, and the linear type-I Dirac dispersion along the X̄-M̄ direction. Owing to the type-I Dirac dispersion feature, PrBi could serve as a promising material platform for studying many unexpected physical properties, such as the highly anisotropic transport and valley polarization of electrons.

A Comparative Study of the Electronic Transport and Gas-Sensitive Properties of Graphene+, T-graphene, Net-graphene, and Biphenylene-Based Two-Dimensional Devices

The electronic transport properties of the four carbon isomers: graphene+, T-graphene, net-graphene, and biphenylene, as well as the gas-sensing properties to the nitrogen-based gas molecules including NO2, NO, and NH3 molecules, are systematically studied and comparatively analyzed by combining the density functional theory with the nonequilibrium Green's function. The four carbon isomers are metallic, especially with graphene+ being a Dirac metal due to the two Dirac cones present at the Fermi energy level. The two-dimensional devices based on these four carbon isomers exhibit good conduction properties in the order of biphenylene > T-graphene > graphene+ > net-graphene. More interestingly, net-graphene-based and biphenylene-based devices demonstrate significant anisotropic transport properties. The gas sensors based on the above four structures all have good selectivity and sensitivity to the NO2 molecule, among which T-graphene-based gas sensors are the most prominent with a maximum ΔI value of 39.98 μA, being only three-fifths of the original. In addition, graphene+-based and biphenylene-based gas sensors are also sensitive to the NO molecule with maximum ΔI values of 29.42 and 25.63 μA, respectively. However, the four gas sensors are all physically adsorbed for the NH3 molecule. By the adsorption energy, charge transfer, electron localization functions, and molecular projection of self-consistent Hamiltonian states, the mechanisms behind all properties can be clearly explained. This work shows the potential of graphene+, T-graphene, net-graphene, and biphenylene for the detection of toxic molecules of NO and NO2.

Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa4

Magnetic topological semimetals allow for an effective control of the topological electronic states by tuning the spin configuration. Among them, Weyl nodal line semimetals are thought to have the greatest tunability, yet they are the least studied experimentally due to the scarcity of material candidates. Here, using a combination of angle-resolved photoemission spectroscopy and quantum oscillation measurements, together with density functional theory calculations, we identify the square-net compound EuGa4 as a magnetic Weyl nodal ring semimetal, in which the line nodes form closed rings near the Fermi level. The Weyl nodal ring states show distinct Landau quantization with clear spin splitting upon application of a magnetic field. At 2 K in a field of 14 T, the transverse magnetoresistance of EuGa4 exceeds 200,000%, which is more than two orders of magnitude larger than that of other known magnetic topological semimetals. Our theoretical model suggests that the non-saturating magnetoresistance up to 40 T arises as a consequence of the nodal ring state.

Charge-Transfer-Driven Phase Transition of Two-Dimensional MoTe2 in Donor-Acceptor Heterostructures

In this work, based on first-principles calculations, we propose that electrene can be considered as an electron-donating substrate to drive the phase transition of MoTe2 from the H to T' phase, which is a topic of long-standing interest and importance. In particular, new electrenes Ca2XN2 (X = Zr, Hf) are predicted with the existence of a nearly free two-dimensional (2D) electron gas and ultralow work functions. In MoTe2/Ca2XN2 donor-acceptor heterostructures, we find significantly large charge transfer (∼0.4e per MoTe2 unit cell) from Ca2XN2 to MoTe2, which stabilizes the T' phase and decreases the phase transition barrier (from ∼0.9 to ∼0.5 eV per unit cell). In addition, the phase transition of MoTe2 on Ca2XN2 remains effective as the interlayer distance varies. It therefore can be confirmed conclusively that our results open a new avenue for phase transition study and provide new insights for the large-scale synthesis of metastable high-quality T'-phase MoTe2.

Coherent magnetic and electronic structure symmetry broken in frustrated bilayer Kagome ferromagnet Fe3Sn2

In this letter, by measuring resistivity and magnetization with magnetic fieldHrotated inabplane and currentIalongcaxis, we studied the magnetic and electronic structure symmetry of frustrated topological bilayer Kagome ferromagnet Fe3Sn2. We observed that the curves of the resistivity and magnetization both showed broken two-fold symmetry from 5 K to 380 K. The further analysis indicates that there is a close causality between the spin arrangement and the electronic states in Fe3Sn2even above room temperature. These phenomena are closely related to the change in spin-orbit coupling (SOC) under the magnetic field. Our experimental results suggest that Fe3Sn2is an ideal platform to study the influence of spin arrangement on electronic state in topological materials and can also be used to design next generation magnetic devices by modulating SOC at external magnetic field.

Polarization dependent light propagation in [Formula: see text] multilayer structure

[Formula: see text] is one of the exciting and outstanding semimetallic members of TMDCs, which has attracted immense attention for manipulating light propagation due to its inherent optical anisotropy and hyperbolic characteristic in the infrared frequency range. We investigate the dependence of the reflectance and transmittance of structures with a single and double [Formula: see text] thin film in terms of frequency and polarization angle of the incident wave. We find rich behaviors in the optical response of these structures due to their anisotropic permittivity tensors. Furthermore, we analyze the polarization state of transmitted and reflected waves through these structures. We demonstrate that these structures provide the ability to achieve desired polarization rotation for outgoing waves by tuning the frequency and polarization angle of the incident wave with respect to the principal axes of [Formula: see text] thin film. In particular, we elucidate the essential relevance of the optical response and polarization rotation of the double thin film structure to the in-plain twist angle of [Formula: see text] thin films. We explain that this structure permits comprehensive control of the polarization rotation of the outgoing waves by adjusting the twist angle of thin films. The proposed structure can be employed as an efficient light manipulator with the aim of application in communication, imaging, and information processing.

Atomic Resolution Imaging of Highly Air-Sensitive Monolayer and Twisted-Bilayer WTe2

Bulk Td-WTe2 is a semimetal, while its monolayer counterpart is a two-dimensional (2D) topological insulator. Recently, electronic transport resembling a Luttinger liquid state was found in twisted-bilayer WTe2 (tWTe2) with a twist angle of ∼5°. Despite the strong interest in 2D WTe2 systems, little experimental information is available about their intrinsic microstructure, leaving obstacles in modeling their physical properties. The monolayer, and consequently tWTe2, are highly air-sensitive, and therefore, probing their atomic structures is difficult. In this study, we develop a robust method for atomic-resolution visualization of monolayers and tWTe2 obtained through mechanical exfoliation and fabrication. We confirm the high crystalline quality of mechanically exfoliated WTe2 samples and observe that tWTe2 with twist angles of ∼5 and ∼2° retains its pristine moiré structure without substantial deformations or reconstructions. The results provide a structural foundation for future electronic modeling of monolayer and tWTe2 moiré lattices.

Phase Discovery and Selected Synthesis of Subvalent Niobium Tellurides Using a Polytelluride Flux Strategy

Transition metal subchalcogenides involve electron-rich metals and can facilitate an in-depth understanding of the relationships among quantum properties such as superconductivity, charge density wave, and topological band structures. However, effective experimental routes toward synthesizing transition metal subchalcogenides are still lacking, hindering the development of new quantum materials. Herein, we propose a eutectic polytelluride flux strategy as an excellent solution to address phase discovery and crystal growth in transition metal subtelluride systems. We report new phases easily and selectively synthesized using a eutectic "K₃Te₄" polytelluride flux upon adjusting the ratio of Nb metal to flux in the starting materials (K/Nb/Te = 3:x:4). Using a high Nb content in the solvent (x = 2 and 1), crystals of KNb₃Te₃O_0.38 and K_0.9Nb₃Te₄ are obtained. Both subtellurides exhibit diverse Nb clusters, including face-sharing and edge-sharing Nb₆ octahedral columns and zig-zag Nb chains. Reducing the Nb content to x = 0.33 leads to the formation of a layered compound, K_1.06NbTe₂. This compound comprises a NbTe₆ trigonal prism with K intercalated between the layers. Single crystals of known binary Nb tellurides can also be grown using another eutectic flux "KTe_3.2", and the obtained NbTe₂ exhibits a new polymorphism with extra trimerization along the b-axis in the Nb-Nb bonded double zig-zag cluster. Precise control over the structural dimensionality and oxidation state, combined with the facile crystal growth process, makes our synthetic strategy an efficient route to explore quantum materials in transition metal subchalcogenides.

Progress on the in situ imaging of growth dynamics of two-dimensional materials

One key issue to promote the industrialization of two-dimensional (2D) materials is to grow high-quality and large-scale 2D materials. Investigations of the growth mechanism and growth dynamics are of fundamental importance for the growth of 2D material, in which in situ imaging is highly needed. By applying different in situ imaging techniques, details for growth process, including nucleation and morphology evolution, can be obtained. This review summarizes the recent progress on the in situ imaging of 2D material growth, in which the growth rate, kink dynamics, domain coalescence, growth across the substrate steps, single-atom catalysis, and intermediates have been revealed.

Understanding palladium-tellurium cluster formation on WTe2: From a kinetically hindered distribution to thermodynamically controlled monodispersity

A fundamental understanding of the transition metal dichalcogenide (TMDC)-metal interface is critical for their utilization in a broad range of applications. We investigate how the deposition of palladium (Pd), as a model metal, on WTe₂(001), leads to the assembly of Pd into clusters and nanoparticles. Using X-ray photoemission spectroscopy, scanning tunneling microscopy imaging, and ab initio simulations, we find that Pd nucleation is driven by the interaction with and the availability of mobile excess tellurium (Te) leading to the formation of Pd-Te clusters at room temperature. Surprisingly, the nucleation of Pd-Te clusters is not affected by intrinsic surface defects, even at elevated temperatures. Upon annealing, the Pd-Te nanoclusters adopt an identical nanostructure and are stable up to ∼523 K. Density functional theory calculations provide a foundation for our understanding of the mobility of Pd and Te atoms, preferential nucleation of Pd-Te clusters, and the origin of their annealing-induced monodispersity. These results highlight the role the excess chalcogenide atoms may play in the metal deposition process. More broadly, the discoveries of synthetic pathways yielding thermally robust monodispersed nanostructures on TMDCs are critical to the manufacturing of novel quantum and microelectronics devices and catalytically active nano-alloy centers.

Principles of Design and Synthesis of Metal Derivatives from MOFs

Materials derived from metal-organic frameworks (MOFs) have demonstrated exceptional structural variety and complexity and can be synthesized using low-cost scalable methods. Although the inherent instability and low electrical conductivity of MOFs are largely responsible for their low uptake for catalysis and energy storage, a superior alternative is MOF-derived metal-based derivatives (MDs) as these can retain the complex nanostructures of MOFs while exhibiting stability and electrical conductivities of several orders of magnitude higher. The present work comprehensively reviews MDs in terms of synthesis and their nanostructural design, including oxides, sulfides, phosphides, nitrides, carbides, transition metals, and other minor species. The focal point of the approach is the identification and rationalization of the design parameters that lead to the generation of optimal compositions, structures, nanostructures, and resultant performance parameters. The aim of this approach is to provide an inclusive platform for the strategies to design and process these materials for specific applications. This work is complemented by detailed figures that both summarize the design and processing approaches that have been reported and indicate potential trajectories for development. The work is also supported by comprehensive and up-to-date tabular coverage of the reported studies.

Growth of self-integrated atomic quantum wires and junctions of a Mott semiconductor

Continued advances in quantum technologies rely on producing nanometer-scale wires. Although several state-of-the-art nanolithographic technologies and bottom-up synthesis processes have been used to engineer these wires, critical challenges remain in growing uniform atomic-scale crystalline wires and constructing their network structures. Here, we discover a simple method to fabricate atomic-scale wires with various arrangements, including stripes, X-junctions, Y-junctions, and nanorings. Single-crystalline atomic-scale wires of a Mott insulator, whose bandgap is comparable to those of wide-gap semiconductors, are spontaneously grown on graphite substrates by pulsed-laser deposition. These wires are one unit cell thick and have an exact width of two and four unit cells (1.4 and 2.8 nm) and lengths up to a few micrometers. We show that the nonequilibrium reaction-diffusion processes may play an essential role in atomic pattern formation. Our findings offer a previously unknown perspective on the nonequilibrium self-organization phenomena on an atomic scale, paving a unique way for the quantum architecture of nano-network.

CoTe2 : A Quantum Critical Dirac Metal with Strong Spin Fluctuations

Quantum critical points separating weak ferromagnetic and paramagnetic phases trigger many novel phenomena. Dynamical spin fluctuations not only suppress the long-range order, but can also lead to unusual transport and even superconductivity. Combining quantum criticality with topological electronic properties presents a rare and unique opportunity. Here, by means of ab initio calculations and magnetic, thermal, and transport measurements, it is shown that the orthorhombic CoTe₂ is close to ferromagnetism, which appears suppressed by spin fluctuations. Calculations and transport measurements reveal nodal Dirac lines, making it a rare combination of proximity to quantum criticality and Dirac topology.

Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers

The evolution of the physical properties of 2D material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'-phase transition metal dichalcogenides (1T'-TMDs) with ubiquitous quantum spin Hall (QSH) states are ideal 2D building blocks of various 3D topological phases. However, the stacking geometry has been previously limited to the bulk 1T'-WTe₂ type. Here, the novel 2M-TMDs consisting of translationally stacked 1T'-monolayers are introduced as promising material platforms with tunable inverted bandgaps and interlayer coupling. By performing advanced polarization-dependent angle-resolved photoemission spectroscopy as well as first-principles calculations on the electronic structure of 2M-TMDs, a topology hierarchy is revealed: 2M-WSe₂ , MoS_2, and MoSe₂ are weak topological insulators (WTIs), whereas 2M-WS₂ is a strong topological insulator (STI). Further demonstration of topological phase transitions by tunning interlayer distance indicates that band inversion amplitude and interlayer coupling jointly determine different topological states in 2M-TMDs. It is proposed that 2M-TMDs are parent compounds of various exotic phases including topological superconductors and promise great application potentials in quantum electronics due to their flexibility in patterning with 2D materials.