Phase-selective synthesis of 1T' MoS2 monolayers and heterophase bilayers

Low Temperature Synthesis of 2D p-Type α-In2Te3 with Fast and Broadband Photodetection

2DA 2 III B 3 VI ${\mathrm{A}}_2^{{\mathrm{III}}}{\mathrm{B}}_3^{{\mathrm{VI}}}$ compounds (A = Al, Ga, In, and B = S, Se, and Te) with intrinsic structural defects offer significant opportunities for high-performance and functional devices. However, obtaining 2D atomic-thin nanoplates with non-layered structure on SiO2/Si substrate at low temperatures is rare, which hinders the study of their properties and applications at atomic-thin thickness limits. In this study, the synthesis of ultrathin, non-layered α-In2Te3 nanoplates is demonstrated using a BiOCl-assisted chemical vapor deposition method at a temperature below 350 °C on SiO2/Si substrate. Comprehensive characterization results confirm the high-quality single crystal is the low-temperature cubic phase α-In2Te3 , possessing a noncentrosymmetric defected ZnS structure with good second harmonic generation. Moreover, α-In2Te3 is revealed to be a p-type semiconductor with a direct and narrow bandgap value of 0.76 eV. The field effect transistor exhibits a high mobility of 18 cm2 V-1 s-1, and the photodetector demonstrates stable photoswitching behavior within a broadband photoresponse from 405 to 1064 nm, with a satisfactory response time of τrise = 1 ms. Notably, the α-In2Te3 nanoplates exhibit good stability against ambient environments. Together, these findings establish α-In2Te3 nanoplates as promising candidates for next-generation high-performance photonics and electronics.

Metal-Organic Framework-Based Hetero-Phase Nanostructure Photocatalysts with Molecular-Scale Tunable Energy Levels

As an effective method to modulate the physicochemical properties of materials, crystal phase engineering, especially hetero-phase, plays an important role in developing high-performance photocatalysts. However, it is still a huge challenge but significant to construct porous hetero-phase nanostructures with adjustable band structures. As a kind of unique porous crystalline materials, metal-organic frameworks (MOFs) might be the appropriate candidate, but the MOF-based hetero-phase is rarely reported. Herein, we developed a secondary building unit (SBU) regulating strategy to prepare two crystal phases of Ti-MOFs constructed by titanium and 1,4-dicarboxybenzene, i.e., COK and MIL-125. Besides, COK/MIL-125 hetero-phase was further constructed. In the photocatalytic hydrogen evolution reaction, COK/MIL-125 possessed the highest H2 yield compared to COK and MIL-125, ascribing to the Z-Scheme homojunction at hetero-phase interface. Furthermore, by decorating with amino groups (i.e., NH2-COK/NH2-MIL-125), the light absorbing capacity was broadened to visible-light region, and the visible-light-driven H2 yield was greatly improved. Briefly, the MOF-based hetero-phase possesses periodic channel structures and molecularly adjustable band structures, which is scarce in traditional organic or inorganic materials. As a proof of concept, our work not only highlights the development of MOF-based hetero-phase nanostructures, but also paves a novel avenue for designing high-performance photocatalysts.

Defect-Rich Metastable MoS2 Promotes Macrophage Reprogramming in Breast Cancer: A Clinical Perspective

Tumor-associated macrophages (TAMs) play a crucial function in solid tumor antigen clearance and immune suppression. Notably, 2D transitional metal dichalcogenides (i.e., molybdenum disulfide (MoS2) nanozymes) with enzyme-like activity are demonstrated in animal models for cancer immunotherapy. However, in situ engineering of TAMs polarization through sufficient accumulation of free radical reactive oxygen species for immunotherapy in clinical samples remains a significant challenge. In this study, defect-rich metastable MoS2 nanozymes, i.e., 1T2H-MoS2, are designed via reduction and phase transformation in molten sodium as a guided treatment for human breast cancer. The as-prepared 1T2H-MoS2 exhibited enhanced peroxidase-like activity (≈12-fold enhancement) than that of commercial MoS2, which is attributed to the charge redistribution and electronic state induced by the abundance of S vacancies. The 1T2H-MoS2 nanozyme can function as an extracellular hydroxyl radical generator, efficiently repolarizing TAMs into the M1-like phenotype and directly killing cancer cells. Moreover, the clinical feasibility of 1T2H-MoS2 is demonstrated via ex vivo therapeutic responses in human breast cancer samples. The apoptosis rate of cancer cells is 3.4 times greater than that of cells treated with chemotherapeutic drugs (i.e., doxorubicin).

Spatially Confined Microcells: A Path toward TMD Catalyst Design

With the ability to maximize the exposure of nearly all active sites to reactions, two-dimensional transition metal dichalcogenide (TMD) has become a fascinating new class of materials for electrocatalysis. Recently, electrochemical microcells have been developed, and their unique spatial-confined capability enables understanding of catalytic behaviors at a single material level, significantly promoting this field. This Review provides an overview of the recent progress in microcell-based TMD electrocatalyst studies. We first introduced the structural characteristics of TMD materials and discussed their site engineering strategies for electrocatalysis. Later, we comprehensively described two distinct types of microcells: the window-confined on-chip electrochemical microcell (OCEM) and the droplet-confined scanning electrochemical cell microscopy (SECCM). Their setups, working principles, and instrumentation were elucidated in detail, respectively. Furthermore, we summarized recent advances of OCEM and SECCM obtained in TMD catalysts, such as active site identification and imaging, site monitoring, modulation of charge injection and transport, and electrostatic field gating. Finally, we discussed the current challenges and provided personal perspectives on electrochemical microcell research.

A Mini Review: Phase Regulation for Molybdenum Dichalcogenide Nanomaterials

Atomically thin two-dimensional transition metal dichalcogenides (TMDCs) have been regarded as ideal and promising nanomaterials that bring broad application prospects in extensive fields due to their ultrathin layered structure, unique electronic band structure, and multiple spatial phase configurations. TMDCs with different phase structures exhibit great diversities in physical and chemical properties. By regulating the phase structure, their properties would be modified to broaden the application fields. In this mini review, focusing on the most widely concerned molybdenum dichalcogenides (MoX2: X = S, Se, Te), we summarized their phase structures and corresponding electronic properties. Particularly, the mechanisms of phase transformation are explained, and the common methods of phase regulation or phase stabilization strategies are systematically reviewed and discussed. We hope the review could provide guidance for the phase regulation of molybdenum dichalcogenides nanomaterials, and further promote their real industrial applications.

Out-of-Plane Ferroelectricity in Two-Dimensional 1T‴-MoS2 Above Room Temperature

Two-dimensional (2D) molybdenum disulfide (MoS2), one of the most extensively studied van der Waals (vdW) materials, is a significant candidate for electronic materials in the post-Moore era. MoS2 exhibits various phases, among which the 1T‴ phase possesses noncentrosymmetry. 1T‴-MoS2 was theoretically predicted to be ferroelectric a decade ago, but this has not been experimentally confirmed until now. Here, we have prepared high-purity 2D 1T‴-MoS2 crystals and experimentally confirmed the room-temperature out-of-plane ferroelectricity. The noncentrosymmetric crystal structure in 2D 1T‴-MoS2 was convinced by atomically resolved transmission electron microscopic imaging and second harmonic generation (SHG) measurements. Further, the ferroelectric polarization states in 2D 1T‴-MoS2 can be switched using piezoresponse force microscopy (PFM) and electrical gating in field-effect transistors (FETs). The ferroelectric-to-paraelectric transition temperature is measured to be about 350 K. Theoretical calculations have revealed that the ferroelectricity of 2D 1T‴-MoS2 originates from the intralayer charge transfer of S atoms within the layer. The discovery of intrinsic ferroelectricity in the 1T‴ phase of MoS2 further enriches the properties of this important vdW material, providing more possibilities for its application in the field of next-generation electronic devices.

In Situ Imaging of Two-Dimensional Crystal Growth Using a Heat-Resistant Optical Microscope

Revealing low-dimensional material growth dynamics is critical for crystal growth engineering. However, in a practical high-temperature growth system, the crystal growth process is a black box because of the lack of heat-resistant imaging tools. Here, we develop a heat-resistant optical microscope and embed it in a chemical vapor deposition (CVD) system to investigate two-dimensional (2D) crystal growth dynamics. This in situ optical imaging CVD system can tolerate temperatures of ≤900 °C with a spatial resolution of ∼1 μm. The growth of monolayer MoS2 crystals was studied as a model for 2D crystal growth. The nucleation and growth process have been imaged. Model analysis and simulation have revealed the growth rate, diffusion coefficient, and spatial distribution of the precursor. More importantly, a new vertex-kink-ledge model has been suggested for monolayer crystal growth. This work provides a new technique for in situ microscopic imaging at high temperatures and fundamental insight into 2D crystal growth.

Strain-Assisted Phase Transformation in Two-Dimensional Transition-Metal Dichalcogenides

Two-dimensional polymorphic transition-metal dichalcogenides have drawn attention for their diverse applications. This work explores the complex interplay between strain-induced phase transformation and crack growth behavior in annealed nanocrystalline MoS2. Employing molecular dynamics (MD) simulations, this research focuses on the effect of grain size, misorientation, and annealing on phase evolution and their effects on the mechanical behavior of MoS2. First, examining phase transformation in monocrystalline MoS2 under various stress states reveals distinct behaviors depending on the initial phase (1T or 2H) and crystallographic orientation with respect to loading directions. Notably, transformation from a layered hexagonal to a body-centered tetragonal structure is more noticeable when strain in a zigzag direction is applied to the 1T sample. As such, single crystalline MoS2 with a 1T phase exhibits a 16% lower fracture stress in the armchair direction compared to that with a 2H phase. On the other hand, the 1T phase shows a 5% higher phonon lifetime compared to the 2H phase with similar phonon group velocities. Next, the influence of thermal energy and mechanical stress on the phase transformation of nanocrystalline MoS2 is investigated through annealing and quenching cycles, uncovering 60 and 44% irreversibility of phase transformation for an average grain size of 3 and 11 nm, respectively. Besides, the evolution of nanocrystalline samples with different initial phases and grain sizes is studied under uniaxial and biaxial stress. This study shows an inverse pseudo-Hall-Petch effect with exponents of 0.11 and 0.09 for 2H and 1T, respectively. The study reveals that phase transformation can occur concurrently with crack initiation and propagation with the 1T phase exhibiting a 19% lower grain size sensitivity of fracture stress compared to the 2H phase.

From Light to Dark: Dancing with Electrons in Colloidal 2D MoS2 Nanosheets

Extending the lifetime of photogenerated electrons in semiconductor systems is an important criterion for the conversion of light into storable energy. We have now succeeded in storing electrons in a photoirradiated colloidal molybdenum disulfide (MoS2) suspension, showcasing its unique reversible photoresponsive behavior. The dampened A and B excitonic peaks indicate the accumulation of photogenerated electrons and the minimization of interactions between MoS2 interlayers. The stored electrons were quantitatively extracted by titrating with a ferrocenium ion in the dark, giving ca. 0.2 electrons per MoS2 formula unit. The emergence of the photoinduced A1g* Raman mode and the decrease in zeta potential after irradiation suggest intercalation of counterions to maintain overall charge balance upon electron storage. These results provide insights into the mechanism of photogenerated electron storage in 2D materials and pave the way for the potential application of colloidal 2D materials in electron storage.

Two-dimensional lead halide perovskite lateral homojunctions enabled by phase pinning

Two-dimensional organic-inorganic hybrid halide perovskites possess diverse structural polymorphs with versatile physical properties, which can be controlled by order-disorder transition of the spacer cation, making them attractive for constructing semiconductor homojunctions. Here, we demonstrate a space-cation-dopant-induced phase stabilization approach to creating a lateral homojunction composed of ordered and disordered phases within a two-dimensional perovskite. By doping a small quantity of pentylammonium into (butylammonium)2PbI4 or vice versa, we effectively suppress the ordering transition of the spacer cation and the associated out-of-plane octahedral tilting in the inorganic framework, resulting in phase pining of the disordered phase when decreasing temperature or increasing pressure. This enables epitaxial growth of a two-dimensional perovskite homojunction with tunable optical properties under temperature and pressure stimuli, as well as directional exciton diffusion across the interface. Our results demonstrate a previously unexplored strategy for constructing two-dimensional perovskite heterostructures by thermodynamic tuning and spacer cation doping.

Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides

Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.

1T'-transition metal dichalcogenide monolayers stabilized on 4H-Au nanowires for ultrasensitive SERS detection

Unconventional 1T'-phase transition metal dichalcogenides (TMDs) have aroused tremendous research interest due to their unique phase-dependent physicochemical properties and applications. However, due to the metastable nature of 1T'-TMDs, the controlled synthesis of 1T'-TMD monolayers (MLs) with high phase purity and stability still remains a challenge. Here we report that 4H-Au nanowires (NWs), when used as templates, can induce the quasi-epitaxial growth of high-phase-purity and stable 1T'-TMD MLs, including WS2, WSe2, MoS2 and MoSe2, via a facile and rapid wet-chemical method. The as-synthesized 4H-Au@1T'-TMD core-shell NWs can be used for ultrasensitive surface-enhanced Raman scattering (SERS) detection. For instance, the 4H-Au@1T'-WS2 NWs have achieved attomole-level SERS detections of Rhodamine 6G and a variety of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) spike proteins. This work provides insights into the preparation of high-phase-purity and stable 1T'-TMD MLs on metal substrates or templates, showing great potential in various promising applications.

Phase-Controlled Growth of 1T'-MoS2 Nanoribbons on 1H-MoS2 Nanosheets

2D heterostructures are emerging as alternatives to conventional semiconductors, such as silicon, germanium, and gallium nitride, for next-generation electronics and optoelectronics. However, the direct growth of 2D heterostructures, especially for those with metastable phases still remains challenging. To obtain 2D transition metal dichalcogenides (TMDs) with designed phases, it is highly desired to develop phase-controlled synthetic strategies. Here, a facile chemical vapor deposition method is reported to prepare vertical 1H/1T' MoS2 heterophase structures. By simply changing the growth atmosphere, semimetallic 1T'-MoS2 can be in situ grown on the top of semiconducting 1H-MoS2, forming vertical semiconductor/semimetal 1H/1T' heterophase structures with a sharp interface. The integrated device based on the 1H/1T' MoS2 heterophase structure displays a typical rectifying behavior with a current rectifying ratio of ≈103. Moreover, the 1H/1T' MoS2-based photodetector achieves a responsivity of 1.07 A W-1 at 532 nm with an ultralow dark current of less than 10-11 A. The aforementioned results indicate that 1H/1T' MoS2 heterophase structures can be a promising candidate for future rectifiers and photodetectors. Importantly, the approach may pave the way toward tailoring the phases of TMDs, which can help us utilize phase engineering strategies to promote the performance of electronic devices.

Salt-Induced High-Density Vacancy-Rich 2D MoS2 for Efficient Hydrogen Evolution

Emerging non-noble metal 2D catalysts, such as molybdenum disulfide (MoS2), hold great promise in hydrogen evolution reactions. The sulfur vacancy is recognized as a key defect type that can activate the inert basal plane to improve the catalytic performance. Unfortunately, the method of introducing sulfur vacancies is limited and requires costly post-treatment processes. Here, a novel salt-assisted chemical vapor deposition (CVD) method is demonstrated for synthesizing ultrahigh-density vacancy-rich 2H-MoS2, with a controllable sulfur vacancy density of up to 3.35 × 1014 cm-2. This approach involves a pre-sprayed potassium chloridepromoter on the growth substrate. The generation of such defects is closely related to ion adsorption in the growth process, the unstable MoS2-K-H2O triggers the formation of sulfur vacancies during the subsequent transfer process, and it is more controllable and nondestructive when compared to traditional post-treatment methods. The vacancy-rich monolayer MoS2 exhibits exceptional catalytic activity based on the microcell measurements, with an overpotential of ≈158.8 mV (100 mA cm-2) and a Tafel slope of 54.3 mV dec-1 in 0.5 m H2SO4 electrolyte. These results indicate a promising opportunity for modulating sulfur vacancy defects in MoS2 using salt-assisted CVD growth. This approach represents a significant leap toward achieving better control over the catalytic performances of 2D materials.

Sm and Gd Contacts in 2D Semiconductors for High-Performance Electronics and Spintronics

Two-dimensional (2D) semiconductors have attracted great attention due to their rich electronic properties and even been considered to have the potential to extend Moore's Law. However, the Schottky barrier between the metal and 2D semiconductor is formed due to the metal-induced gap states (MIGS), which greatly hinder the development of 2D semiconductor transistors in large-scale integrated circuits. Meanwhile, most air-stable 2D semiconductors are nonmagnetic, limiting the possibility of spintronic application. Here, we report a new strategy to suppress the MIGS and reduce the Schottky barrier height on 2D semiconductors (MoS2, WS2, and WSe2) by using lanthanide metal (Sm and Gd) contacts. It was found the lanthanide contacts exhibit a good Ohmic property with a near-zero Schottky barrier. As a result, the carrier mobility of MoS2 transistors reaches 118 cm2/(V s). Furthermore, Gd-contact MoS2 transistors show the typical magnetic property where the magnetoresistance reaches 2.7% at 5 K. By studying its spin valve effect, it was demonstrated that the nonlocal magnetoresistance is 4.1% and spin polarization is 3.25%. This study provides a promising pathway for high-performance 2D electronic and spintronics, which may open a new strategy for future computing-in-memory architecture.

Phase transition in WSe2-xTex monolayers driven by charge injection and pressure: a first-principles study

Alloying strategies permit new probes for governing structural stability and semiconductor-semimetal phase transition of transition metal dichalcogenides (TMDs). However, the possible structure and phase transition mechanism of the alloy TMDs, and the effect of an external field, have been still unclear. Here, the enrichment of the Te content in WSe2-xTex monolayers allows for coherent structural transition from the H phase to the T' phase. The crystal orbital Hamiltonian population (COHP) uncovers that the bonding state of the H phase approaches the high-energy domain near the Fermi level as the Te concentration increases, posing a source of structural instability followed by a weakened energy barrier for the phase transition. In addition, the structural phase transition driven by charge injection opens up new possibilities for the development of phase-change devices based on atomic thin films. For WSe2-xTex monolayers with the H phase as the stable phase, the critical value of electron concentration triggering the phase transition decreases with an increase in the x value. Furthermore, the energy barrier from the H phase to the T' phase can be effectively reduced by applying tensile strain, which could favor the phase switching in electronic devices. This work provides a critical reference for controllable modulation of phase-sensitive devices from alloy materials with rich phase characteristics.

Technology and Integration Roadmap for Optoelectronic Memristor

Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe2. The lattice-matched MoSe2 nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe2 with the formation of MoSe2-CrSe2 heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe2 monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe2 exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.

Phase-engineered synthesis of atomically thin te single crystals with high on-state currents

Multiple structural phases of tellurium (Te) have opened up various opportunities for the development of two-dimensional (2D) electronics and optoelectronics. However, the phase-engineered synthesis of 2D Te at the atomic level remains a substantial challenge. Herein, we design an atomic cluster density and interface-guided multiple control strategy for phase- and thickness-controlled synthesis of α-Te nanosheets and β-Te nanoribbons (from monolayer to tens of μm) on WS2 substrates. As the thickness decreases, the α-Te nanosheets exhibit a transition from metallic to n-type semiconducting properties. On the other hand, the β-Te nanoribbons remain p-type semiconductors with an ON-state current density (ION) up to ~ 1527 μA μm-1 and a mobility as high as ~ 690.7 cm2 V-1 s-1 at room temperature. Both Te phases exhibit good air stability after several months. Furthermore, short-channel (down to 46 nm) β-Te nanoribbon transistors exhibit remarkable electrical properties (ION = ~ 1270 μA μm-1 and ON-state resistance down to 0.63 kΩ μm) at Vds = 1 V.

High intrinsic phase stability of ultrathin 2M WS2

Metallic 2M or 1T'-phase transition metal dichalcogenides (TMDs) attract increasing interests owing to their fascinating physicochemical properties, such as superconductivity, optical nonlinearity, and enhanced electrochemical activity. However, these TMDs are metastable and tend to transform to the thermodynamically stable 2H phase. In this study, through systematic investigation and theoretical simulation of phase change of 2M WS2, we demonstrate that ultrathin 2M WS2 has significantly higher intrinsic thermal stabilities than the bulk counterparts. The 2M-to-2H phase transition temperature increases from 120 °C to 210 °C in the air as thickness of WS2 is reduced from bulk to bilayer. Monolayered 1T' WS2 can withstand temperatures up to 350 °C in the air before being oxidized, and up to 450 °C in argon atmosphere before transforming to 1H phase. The higher stability of thinner 2M WS2 is attributed to stiffened intralayer bonds, enhanced thermal conductivity and higher average barrier per layer during the layer(s)-by-layer(s) phase transition process. The observed high intrinsic phase stability can expand the practical applications of ultrathin 2M TMDs.

Accelerating Sulfur Redox Kinetics by Electronic Modulation and Drifting Effects of Pre-Lithiation Electrocatalysts

Efficient catalyst design is crucial for addressing the sluggish multi-step sulfur redox reaction (SRR) in lithium-sulfur batteries (LiSBs), which are among the promising candidates for the next-generation high-energy-density storage systems. However, the limited understanding of the underlying catalytic kinetic mechanisms and the lack of precise control over catalyst structures pose challenges in designing highly efficient catalysts, which hinder the LiSBs' practical application. Here, drawing inspiration from the theoretical calculations, the concept of precisely controlled pre-lithiation SRR electrocatalysts is proposed. The dual roles of channel and surface lithium in pre-lithiated 1T'-MoS2 are revealed, referred to as the "electronic modulation effect" and "drifting effect", respectively, both of which contribute to accelerating the SRR kinetics. As a result, the thus-designed 1T'-Lix MoS2 /CS cathode obtained by epitaxial growth of pre-lithiated 1T'-MoS2 on cubic Co9 S8 exhibits impressive performance with a high initial specific capacity of 1049.8 mAh g-1 , excellent rate-capability, and remarkable long-term cycling stability with a decay rate of only 0.019% per cycle over 1000 cycles at 3 C. This work highlights the importance of precise control in pre-lithiation parameters and the synergistic effects of channel and surface lithium, providing new valuable insights into the design and optimization of SRR electrocatalysts for high-performance LiSBs.

Highly Reversible Molecular Photoswitches with Transition Metal Dichalcogenides Electrodes

The molecule-electrode coupling plays an essential role in photoresponsive devices with photochromic molecules, and the strong coupling between the molecule and the conventional electrodes leads to/ the quenching effect and limits the reversibility of molecular photoswitches. In this work, we developed a strategy of using transition metal dichalcogenides (TMDCs) electrodes to fabricate the thiol azobenzene (TAB) self-assembled monolayers (SAMs) junctions with the eutectic gallium-indium (EGaIn) technique. The current-voltage characteristics of the EGaIn/GaOx //TAB/TMDCs photoswitches showed an almost 100% reversible photoswitching behavior, which increased by ∼28% compared to EGaIn/GaOx //TAB/AuTS photoswitches. Density functional theory (DFT) calculations showed the coupling strength of the TAB-TMDCs electrode decreased by 42% compared to that of the TAB-AuTS electrode, giving rise to improved reversibility. our work demonstrated the feasibility of 2D TMDCs for fabricating SAMs-based photoswitches with unprecedentedly high reversibility.

2H-2M Phase Control of WSe2 Nanosheets by Se Enrichment Toward Enhanced Electrocatalytic Hydrogen Evolution Reaction

The phase control of transition metal dichalcogenides (TMDs) is an intriguing approach for tuning the electronic structure toward extensive applications. In this study, WSe2 nanosheets synthesized via a colloidal reaction exhibit a phase conversion from semiconducting 2H to metallic 2M under Se-rich growth conditions (i.e., increasing the concentration of Se precursor or lowering the growth temperature). High-resolution scanning transmission electron microscopy images are used to identify the stacking sequence of the 2M phase, which is distinctive from that of the 1T' phase. First-principles calculations employing various Se-rich models (intercalation and substitution) indicated that Se enrichment induces conversion to the 2M phase. The 2M phase WSe2 nanosheets with the Se excess exhibited enhanced electrocatalytic performance in the hydrogen evolution reaction (HER). In situ X-ray absorption fine structure studies suggested that the excess Se atoms in the 2M phase WSe2 enhanced the HER catalytic activity, which is supported by the Gibbs free energy (ΔGH* ) of H adsorption and the Fermi abundance function. These results provide an appealing strategy for phase control of TMD catalysts.

Coexisting Phases in Transition Metal Dichalcogenides: Overview, Synthesis, Applications, and Prospects

Over the past decade, significant advancements have been made in phase engineering of two-dimensional transition metal dichalcogenides (TMDCs), thereby allowing controlled synthesis of various phases of TMDCs and facile conversion between them. Recently, there has been emerging interest in TMDC coexisting phases, which contain multiple phases within one nanostructured TMDC. By taking advantage of the merits from the component phases, the coexisting phases offer enhanced performance in many aspects compared with single-phase TMDCs. Herein, this review article thoroughly expounds the latest progress and ongoing efforts on the syntheses, properties, and applications of TMDC coexisting phases. The introduction section overviews the main phases of TMDCs (2H, 3R, 1T, 1T', 1Td), along with the advantages of phase coexistence. The subsequent section focuses on the synthesis methods for coexisting phases of TMDCs, with particular attention to local patterning and random formations. Furthermore, on the basis of the versatile properties of TMDC coexisting phases, their applications in magnetism, valleytronics, field-effect transistors, memristors, and catalysis are discussed. Lastly, a perspective is presented on the future development, challenges, and potential opportunities of TMDC coexisting phases. This review aims to provide insights into the phase engineering of 2D materials for both scientific and engineering communities and contribute to further advancements in this emerging field.

Gate tunable linear dichroism in monolayer 1T'-MoS2

The linear dichroism demonstrates promising applications in the fields of polarization-resolved photodetectors and polarization optical imaging. Herein, we study the optical properties of monolayer 1T'-MoS2 based on a four-band effective k · p Hamiltonian within the framework of linear response theory. Owing to the anisotropic band structure, the k-resolved optical transition matrix elements associated with armchair(x) and zigzag(y) direction polarized light exhibit a staggered pattern. The anisotropy of the optical absorption spectrum is shown to sensitively depend on the photon energy, the light polarization and the gate voltage. A gate voltage can continuously modulate the anisotropy of the optical absorption spectra, rendering it isotropic or even reversing the initial anisotropy. This modulation leads to linear dichroism conversions across multiple wavelengths. Our findings are useful to design polarized photodetectors and sensors based on monolayer 1T'-MoS2. Our results are also applicable to other monolayer transition metal dichalcogenides with 1T' structure.

Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets

The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Panoply of Ni-Doping-Induced Reconstructions, Electronic Phases, and Ferroelectricity in 1T-MoS2

The distorted phases of monolayer 1T-MoS2 have distinct electronic properties, with potential applications in optoelectronics, catalysis, and batteries. We theoretically investigate the use of Ni-doping to generate distorted 1T phases and find not only the ones usually reported but also two further phases (3 × 3 and 4 × 4), depending on the concentration and the substitutional or adatom doping site. Corresponding pristine phases are stable after removal of dopants, which might offer a potential route to experimental synthesis. We find large ferroelectric polarizations, most notably in 3 × 3 which─compared to the recently measured 1T″─has 100 times greater ferroelectric polarization, a lower energy, and a larger band gap. Doped phases include exotic multiferroic semimetals, ferromagnetic polar metals, and improper ferroelectrics with only in-plane polarization switchable. The pristine phases have unusual multiple gaps in the conduction bands with possible applications for intermediate band solar cells, transparent conductors, and nonlinear optics.

Dramatically Enhanced Valley-Polarized Emission by Alloying and Electrical Tuning of Monolayer WTe2 x S2(1- x ) Alloys at Room Temperature with 1T'-WTe2 -Contact

Monolayer ternary tellurides based on alloying different transition metal dichalcogenides (TMDs) can result in new two-dimensional (2D) materials ranging from semiconductors to metals and superconductors with tunable optical and electrical properties. Semiconducting WTe2 x S2(1- x ) monolayer possesses two inequivalent valleys in the Brillouin zone, each valley coupling selectively with circularly polarized light (CPL). The degree of valley polarization (DVP) under the excitation of CPL represents the purity of valley polarized photoluminescence (PL), a critical parameter for opto-valleytronic applications. Here, new strategies to efficiently tailor the valley-polarized PL from semiconducting monolayer WTe2 x S2(1- x ) at room temperature (RT) through alloying and back-gating are presented. The DVP at RT is found to increase drastically from < 5% in WS2 to 40% in WTe0.12 S1.88 by Te-alloying to enhance the spin-orbit coupling. Further enhancement and control of the DVP from 40% up to 75% is demonstrated by electrostatically doping the monolayer WTe0.12 S1.88 via metallic 1T'-WTe2 electrodes, where the use of 1T'-WTe2 substantially lowers the Schottky barrier height (SBH) and weakens the Fermi-level pinning of the electrical contacts. The demonstration of drastically enhanced DVP and electrical tunability in the valley-polarized emission from 1T'-WTe2 /WTe0.12 S1.88 heterostructures paves new pathways towards harnessing valley excitons in ultrathin valleytronic devices for RT applications.

Interlayer and Phase Engineering Modifications of K-MoS2 @C Nanoflowers for High-Performance Degradable Zn-Ion Batteries

2D transition metal dichalcogenides (TMDs) have garnered significant interest as cathode materials for aqueous zinc-ion batteries (AZIBs) due to their open transport channels and abundant Zn2+ intercalation sites. However, unmodified TMDs exhibit low electrochemical activity and poor kinetics owing to the high binding energy and large hydration radius of divalent Zn2+ . To overcome these limitations, an interlayer engineering strategy is proposed where K+ is preintercalated into K-MoS2 nanosheets, which then undergo in situ growth on carbon nanospheres (denoted as K-MoS2 @C nanoflowers). This strategy stimulates in-plane redox-active sites, expands the interlayer spacing (from 6.16 to 9.42 Å), and induces the formation of abundant MoS2 1T-phase. The K-MoS2 @C cathode demonstrates excellent redox activity and fast kinetics, attributed to the potassium ions acting as a structural "stabilizer" and an electrostatic interaction "shield," accelerating charge transfer, promoting Zn2+ diffusion, and ensuring structural stability. Meanwhile, the carbon nanospheres serve as a 3D conductive network for Zn2+ and enhance the cathode's hydrophilicity. More significantly, the outstanding electrochemical performance of K-MoS2 @C, along with its superior biocompatibility and degradability of its related components, can enable an implantable energy supply, providing novel opportunities for the application of transient electronics.

Biodegradable Dual-Network Cellulosic Composite Bioplastic Metafilm for Plastic Substitute

With the escalating environmental and health concerns over petroleum-based plastics, sustainable and biodegradable cellulosic materials are a promising alternative to plastics, yet remain unsatisfied properties such as fragility, inflammability and water sensitivity for practical usage. Herein, we present a novel dual-network design strategy to address these limitations and fabricate a high-performance cellulosic composite bioplastic metafilm with the exceptional mechanical toughness (23.5 MJ m-3 ), flame retardance, and solvent resistance by in situ growth of cyclotriphosphazene-bridged organosilica network within bacterial cellulose matrix. The phosphorus, nitrogen-containing organosilica network, verified by the experimental and theoretical results, plays a triple action on significantly enhancing tensile strength, toughness, flame retardance and water resistance of composite bioplastic metafilm. Furthermore, cellulosic bioplastic composite metafilm demonstrates a higher maximum usage temperature (245 °C), lower thermal expansion coefficient (15.19 ppm °C-1 ), and better solvent resistance than traditional plastics, good biocompatibility and natural biodegradation. Moreover, the composite bioplastic metafilm have a good transparency of average 74 % and a high haze over 80 %, which can serve as an outstanding substrate substitute for commercial polyethylene terephthalate film to address the demand of flexible ITO films. This work paves a creative way to design and manufacture the competitive bioplastic composite to replace daily-used plastics.

Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides

The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.

Copper-Loaded Nanoheterojunction Enables Superb Orthotopic Osteosarcoma Therapy via Oxidative Stress and Cell Cuproptosis

Catalytic tumor therapy based on two-dimensional (2D) nanomaterials is a burgeoning and promising tumor therapeutic modality. However, the inefficient utilization and conversion of exogenous stimulation, single catalytic modality, and unsatisfactory therapeutic efficiency in the tumor microenvironment (TME) have seriously restricted their further application in tumor therapy. Herein, the heterogeneous carbon nitride-based nanoagent named T-HCN@CuMS was successfully developed, which dramatically improved the efficiency of the tumor therapeutic modality. Benefiting from the donor-acceptor (triazine-heptazine) structure within the heterogeneous carbon nitride nanosheets (HCN) and the construction of interplanar heterostructure with copper loaded metallic molybdenum bisulfide nanosheets (CuMS), T-HCN@CuMS presented a favorable photo-induced catalytic property to generate abundant reactive oxygen species (ROS) under near-infrared (NIR) light irradiation. Besides, the choice of CuMS simultaneously enabled this nanoagent to efficiently catalyze the Fenton-like reaction and trigger cell cuproptosis, a recently recognized regulated cell death mode characterized by imbalanced intracellular copper homeostasis and aggregation of lipoylated mitochondrial proteins. Moreover, upon surface modification with cRGDfk-PEG2k-DSPE, T-HCN@CuMS was prepared and endowed with improved dispersibility and αvβ3 integrins targeting ability. In general, through the rational design, T-HCN@CuMS was facilely prepared and had achieved satisfactory antitumor and antimetastasis outcomes both in vitro and in a high-metastatic orthotopic osteosarcoma model. This strategy could offer an idea to treat malignant diseases based on 2D nanomaterials.

Recent Progress on Phase Engineering of Nanomaterials

As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.

Photocatalysis with atomically thin sheets

Atomically thin sheets (e.g., graphene and monolayer molybdenum disulfide) are ideal optical and reaction platforms. They provide opportunities for deciphering some important and often elusive photocatalytic phenomena related to electronic band structures and photo-charges. In parallel, in such thin sheets, fine tuning of photocatalytic properties can be achieved. These include atomic-level regulation of electronic band structures and atomic-level steering of charge separation and transfer. Herein, we review the physics and chemistry of electronic band structures and photo-charges, as well as their state-of-the-art characterization techniques, before delving into their atomic-level deciphering and mastery on the platform of atomically thin sheets.

Charge Self-Regulation of Metallic Heterostructure Ni2 P@Co9 S8 for Alkaline Water Electrolysis with Ultralow Overpotential at Large Current Density

Designing cost-effective alkaline water-splitting electrocatalysts is essential for large-scale hydrogen production. However, nonprecious catalysts face challenges in achieving high activity and durability at a large current density. An effective strategy for designing high-performance electrocatalysts is regulating the active electronic states near the Fermi-level, which can improve the intrinsic activity and increase the number of active sites. As a proof-of-concept, it proposes a one-step self-assembly approach to fabricate a novel metallic heterostructure based on nickel phosphide and cobalt sulfide (Ni2 P@Co9 S8 ) composite. The charge transfer between active Ni sites of Ni2 P and Co─Co bonds of Co9 S8 efficiently enhances the active electronic states of Ni sites, and consequently, Ni2 P@Co9 S8 exhibits remarkably low overpotentials of 188 and 253 mV to reach the current density of 100 mA cm-2 for the hydrogen evolution reaction and oxygen evolution reaction, respectively. This leads to the Ni2 P@Co9 S8 incorporated water electrolyzer possessing an ultralow cell voltage of 1.66 V@100 mA cm-2 with ≈100% retention over 100 h, surpassing the commercial Pt/C║RuO2 catalyst (1.9 V@100 mA cm-2 ). This work provides a promising methodology to boost the activity of overall water splitting with ultralow overpotentials at large current density by shedding light on the charge self-regulation of metallic heterostructure.

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

Field-effect transistors (FETs) made of monolayer 2D semiconductors (e.g., MoS2 ) are among the basis of the future modern wafer chip industry. However, unusually high contact resistances at the metal-semiconductor interfaces have seriously limited the improvement of monolayer 2D semiconductor FETs so far. Here, a high-scale processable strategy is reported to achieve ohmic contact between the metal and monolayer MoS2 with a large number of sulfur vacancies (SVs) by using simple sulfur-vacancy engineering. Due to the successful doping of the contact regions by introducing SVs, the contact resistance of monolayer MoS2 FET is as low as 1.7 kΩ·µm. This low contact resistance enables high-performance MoS2 FETs with ultrahigh carrier mobility of 153 cm2 V-1 s-1 , a large on/off ratio of 4 × 109 , and high saturation current of 342 µA µm-1 . With the comprehensive investigation of different SV concentrations by adjusting the plasma duration, it is also demonstrated that the SV-increased electron doping, with its resulting reduced Schottky barrier, is the dominant factor driving enhanced electrical performance. The work provides a simple method to promote the development of industrialized atomically thin integrated circuits.

Unusual Defect-Related Room-Temperature Emission from WS2 Monolayers Synthesized through a Potassium-Based Precursor

Alkali-metal-based synthesis of transition metal dichalcogenide (TMD) monolayers is an established strategy for both ultralarge lateral growth and promoting the metastable 1T phase. However, whether this can also lead to modified optical properties is underexplored, with reported photoluminescence (PL) spectra from semiconducting systems showing little difference from more traditional syntheses. Here, we show that the growth of WS2 monolayers from a potassium-salt precursor can lead to a pronounced low-energy emission in the PL spectrum. This is seen 200-300 meV below the A exciton and can dominate the signal at room temperature. The emission is spatially heterogeneous, and its presence is attributed to defects in the layer due to sublinear intensity power dependence, a noticeable aging effect, and insensitivity to washing in water and acetone. Interestingly, statistical analysis links the band to an increase in the width of the A1g Raman band. The emission can be controlled by altering when hydrogen is introduced into the growth process. This work demonstrates intrinsic and intense defect-related emission at room temperature and establishes further opportunities for tuning TMD properties through alkali-metal precursors.

Phase Engineering of 2D Materials

Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.

Recent advances in defect-engineered molybdenum sulfides for catalytic applications

Electrochemical energy conversion and storage driven by renewable energy sources is drawing ever-increasing interest owing to the needs of sustainable development. Progress in the related electrochemical reactions relies on highly active and cost-effective catalysts to accelerate the sluggish kinetics. A substantial number of catalysts have been exploited recently, thanks to the advances in materials science and engineering. In particular, molybdenum sulfide (MoSx) furnishes a classic platform for studying catalytic mechanisms, improving catalytic performance and developing novel catalytic reactions. Herein, the recent theoretical and experimental progress of defective MoSx for catalytic applications is reviewed. This article begins with a brief description of the structure and basic catalytic applications of MoS2. The employment of defective two-dimensional and non-two-dimensional MoSx catalysts in the hydrogen evolution reaction (HER) is then reviewed, with a focus on the combination of theoretical and experimental tools for the rational design of defects and understanding of the reaction mechanisms. Afterward, the applications of defective MoSx as catalysts for the N2 reduction reaction, the CO2 reduction reaction, metal-sulfur batteries, metal-oxygen/air batteries, and the industrial hydrodesulfurization reaction are discussed, with a special emphasis on the synergy of multiple defects in achieving performance breakthroughs. Finally, the perspectives on the challenges and opportunities of defective MoSx for catalysis are presented.

Toward Edge Engineering of Two-Dimensional Layered Transition-Metal Dichalcogenides by Chemical Vapor Deposition

The manipulation of edge configurations and structures in atomically-thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges) as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc.). These edge-rich TMD layers offer versatile candidates for probing the physical and chemical properties and exploring potential applications in electronics, optoelectronics, catalysis, sensing, and quantum technologies. In this Review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of distinct properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this Review is to motivate further research and development efforts to use CVD as a scalable approach to harness the benefits of such crystal-edge engineering.

Phase-dependent growth of Pt on MoS2 for highly efficient H2 evolution

Crystal phase is a key factor determining the properties, and hence functions, of two-dimensional transition-metal dichalcogenides (TMDs)1,2. The TMD materials, explored for diverse applications3-8, commonly serve as templates for constructing nanomaterials3,9 and supported metal catalysts4,6-8. However, how the TMD crystal phase affects the growth of the secondary material is poorly understood, although relevant, particularly for catalyst development. In the case of Pt nanoparticles on two-dimensional MoS2 nanosheets used as electrocatalysts for the hydrogen evolution reaction7, only about two thirds of Pt nanoparticles were epitaxially grown on the MoS2 template composed of the metallic/semimetallic 1T/1T' phase but with thermodynamically stable and poorly conducting 2H phase mixed in. Here we report the production of MoS2 nanosheets with high phase purity and show that the 2H-phase templates facilitate the epitaxial growth of Pt nanoparticles, whereas the 1T' phase supports single-atomically dispersed Pt (s-Pt) atoms with Pt loading up to 10 wt%. We find that the Pt atoms in this s-Pt/1T'-MoS2 system occupy three distinct sites, with density functional theory calculations indicating for Pt atoms located atop of Mo atoms a hydrogen adsorption free energy of close to zero. This probably contributes to efficient electrocatalytic H2 evolution in acidic media, where we measure for s-Pt/1T'-MoS2 a mass activity of 85 ± 23 A [Formula: see text] at the overpotential of -50 mV and a mass-normalized exchange current density of 127 A [Formula: see text] and we see stable performance in an H-type cell and prototype proton exchange membrane electrolyser operated at room temperature. Although phase stability limitations prevent operation at high temperatures, we anticipate that 1T'-TMDs will also be effective supports for other catalysts targeting other important reactions.

Giant room-temperature nonlinearities in a monolayer Janus topological semiconductor

Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and certain topological properties, such as the Berry curvature and the quantum metric tensor, have attracted considerable interest. Here, we report giant room-temperature nonlinearities in non-centrosymmetric two-dimensional topological materials-the Janus transition metal dichalcogenides in the 1 T' phase, synthesized by an advanced atomic-layer substitution method. High harmonic generation, terahertz emission spectroscopy, and second harmonic generation measurements consistently show orders-of-the-magnitude enhancement in terahertz-frequency nonlinearities in 1 T' MoSSe (e.g., > 50 times higher than 2H MoS2 for 18th order harmonic generation; > 20 times higher than 2H MoS2 for terahertz emission). We link this giant nonlinear optical response to topological band mixing and strong inversion symmetry breaking due to the Janus structure. Our work defines general protocols for designing materials with large nonlinearities and heralds the applications of topological materials in optoelectronics down to the monolayer limit.

CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions

In this study, the influence of growth temperature variation on the synthesis of MoS2 using a direct MoO2 precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS2 occurred. The optimal growth temperature for producing continuous MoS2 films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS2 to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO2 precursor amount, resulting in the formation of multilayer MoS2 domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS2, thereby facilitating its application in semiconductors and related industries.

An open database of computed bulk ternary transition metal dichalcogenides

We present a dataset of structural relaxations of bulk ternary transition metal dichalcogenides (TMDs) computed via plane-wave density functional theory (DFT). We examined combinations of up to two chalcogenides with seven transition metals from groups 4-6 in octahedral (1T) or trigonal prismatic (2H) coordination. The full dataset consists of 672 unique stoichiometries, with a total of 50,337 individual configurations generated during structural relaxation. Our motivations for building this dataset are (1) to develop a training set for the generation of machine and deep learning models and (2) to obtain structural minima over a range of stoichiometries to support future electronic analyses. We provide the dataset as individual VASP xml files as well as all configurations encountered during relaxations collated into an ASE database with the corresponding total energy and atomic forces. In this report, we discuss the dataset in more detail and highlight interesting structural and electronic features of the relaxed structures.

Liquid Phase Edge Epitaxy of Transition-Metal Dichalcogenide Monolayers

Precise monolayer epitaxy is important for two-dimensional (2D) semiconductors toward future electronics. Here, we report a new self-limited epitaxy approach, liquid phase edge epitaxy (LPEE), for precise-monolayer epitaxy of transition-metal dichalcogenides. In this method, the liquid solution contacts 2D grains only at the edges, which confines the epitaxy only at the grain edges and then precise monolayer epitaxy can be achieved. High-temperature in situ imaging of the epitaxy progress directly supports this edge-contact epitaxy mechanism. Typical transition-metal dichalcogenide monolayers (MX₂, M = Mo, W, and Re; X = S or Se) have been obtained by LPEE with a proper choice of molten alkali halide solvents (AL, A = Li, Na, K, and Cs; L = Cl, Br, or I). Furthermore, alloying and magnetic-element doping have also been realized by taking advantage of the liquid phase epitaxy approach. This LPEE method provides a precise and highly versatile approach for 2D monolayer epitaxy and can revolutionize the growth of 2D materials toward electronic applications.

Advanced Strategies in Synthesis of Two-Dimensional Materials with Different Compositions and Phases

In recent years, 2D materials-M_a X_b with different compositions and phases have attracted tremendous attention due to their diverse structures and electronic features. The common thermodynamically stable 2H and metastable 1T phases have been extensively studied, however, there are many unusual compositions and phases with novel physical properties that have yet to be explored. Therefore, summarization of the synthesis strategies, atomic structures, and the unique physical properties of 2D materials with different compositions and phases is very important for their development. In this review, the strategies including chemical vapor deposition, intercalation, atomic layer deposition, chemical vapor transport, and electrostatic gating for synthesizing various 2D materials with different phases and compositions are first summarized. Specially, the intercalation strategies including heterogeneous- and self-intercalation for controllable phases and compositions fabrication are mainly discussed. Then, the novel atomic structures of 2D materials are analyzed, followed by the fascinating physical properties including ferroelectricity, ferromagnetism, superconductivity, and so on. Finally, the conclusion and outlook are offered including the challenges and future prospects of 2D materials with different compositions and phases.

Photocatalytic Applications of ReS2-Based Heterostructures

ReS2-based heterostructures, which involve the coupling of a narrow band-gap semiconductor ReS2 with other wide band-gap semiconductors, have shown promising performance in energy conversion and environmental pollution protection in recent years. This review focuses on the preparation methods, encompassing hydrothermal, chemical vapor deposition, and exfoliation techniques, as well as achievements in correlated applications of ReS2-based heterostructures, including type-I, type-II heterostructures, and Z-scheme heterostructures for hydrogen evolution, reduction of CO2, and degradation of pollutants. We believe that this review provides an overview of the most recent advances to guide further research and development of ReS2-based heterostructures for photocatalysis.

Interisland-Distance-Mediated Growth of Centimeter-Scale Two-Dimensional Magnetic Fe3O4 Arrays with Unidirectional Domain Orientations

Two-dimensional (2D) nanosheet arrays with unidirectional orientations are of great significance for synthesizing wafer-scale single crystals. Although great efforts have been devoted, the growth of atomically thin magnetic nanosheet arrays and single crystals is still unaddressed. Here we design an interisland-distance-mediated chemical vapor deposition strategy to synthesize centimeter-scale atomically thin Fe₃O₄ arrays with unidirectional orientations on mica. The unidirectional alignment of nearly all the Fe₃O₄ nanosheets is driven by a dual-coupling-guided growth mechanism. The Fe₃O₄/mica interlayer interaction induces two preferred antiparallel orientations, whereas the interisland interaction of Fe₃O₄ breaks the energy degeneracy of antiparallel orientations. The room-temperature long-range ferrimagnetic order and thickness-tunable magnetic domain evolution are uncovered in atomically thin Fe₃O₄. This strategy to tune the orientations of nanosheets through the an interisland interaction can guide the synthesis of other 2D transition-metal oxides, thereby laying a solid foundation for future spintronic device applications at the integration level.

Phase Transition Induced via the Template Enabling Cocoon-like MoS2 an Exceptionally Electromagnetic Absorber

Structural engineering via the template method is efficient for micro-nano assembling. However, only structural design and lack of composition control restrict their advanced application. To overcome this issue, applying a template to simultaneously realize the structural design and fine component control is highly desired, which has been ignored. In this study, a spinel-shaped MoS₂ heterostructure with controlled phase ratios of 1H and 2H phase is developed using the AlOOH template method. This work demonstrates that the MoS₂ phase transition mechanism from 2H to 1T is substantially attributed to the close exposed crystal's surface and approximately accordant surface energy. The superiority and additional proof are provided based on density-functional theory simulation, transmission electron microscope holography, etc. With an effective absorptance region of 6.3 GHz under a thickness of 1.4 mm, the reported samples present outstanding microwave absorption capacity. This is attributed to the beneficial coupled effect between the well-designed structure and phase regulation. This work offers valuable insights into structural engineering and component regulation template methods.