1
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Kumar AM, Yagodkin D, Rosati R, Bock DJ, Schattauer C, Tobisch S, Hagel J, Höfer B, Kirchhof JN, Hernández López P, Burfeindt K, Heeg S, Gahl C, Libisch F, Malic E, Bolotin KI. Strain fingerprinting of exciton valley character in 2D semiconductors. Nat Commun 2024; 15:7546. [PMID: 39214968 PMCID: PMC11364664 DOI: 10.1038/s41467-024-51195-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Accepted: 07/30/2024] [Indexed: 09/04/2024] Open
Abstract
Intervalley excitons with electron and hole wavefunctions residing in different valleys determine the long-range transport and dynamics observed in many semiconductors. However, these excitons with vanishing oscillator strength do not directly couple to light and, hence, remain largely unstudied. Here, we develop a simple nanomechanical technique to control the energy hierarchy of valleys via their contrasting response to mechanical strain. We use our technique to discover previously inaccessible intervalley excitons associated with K, Γ, or Q valleys in prototypical 2D semiconductors WSe2 and WS2. We also demonstrate a new brightening mechanism, rendering an otherwise "dark" intervalley exciton visible via strain-controlled hybridization with an intravalley exciton. Moreover, we classify various localized excitons from their distinct strain response and achieve large tuning of their energy. Overall, our valley engineering approach establishes a new way to identify intervalley excitons and control their interactions in a diverse class of 2D systems.
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Affiliation(s)
- Abhijeet M Kumar
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Denis Yagodkin
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Roberto Rosati
- Philipps-Universität Marburg, Mainzer Gasse 33, Marburg, Germany
| | - Douglas J Bock
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Christoph Schattauer
- Institute for Theoretical Physics, TU Wien, Wiedner Hauptstraße 8-10, Vienna, Austria
| | - Sarah Tobisch
- Institute for Theoretical Physics, TU Wien, Wiedner Hauptstraße 8-10, Vienna, Austria
| | - Joakim Hagel
- Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Gothenburg, Sweden
| | - Bianca Höfer
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Jan N Kirchhof
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Delft, The Netherlands
| | - Pablo Hernández López
- Institute for Physics and IRIS Adlershof, Humboldt-Universität Berlin, Newtonstraße 15, Berlin, Germany
| | - Kenneth Burfeindt
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Sebastian Heeg
- Institute for Physics and IRIS Adlershof, Humboldt-Universität Berlin, Newtonstraße 15, Berlin, Germany
| | - Cornelius Gahl
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany
| | - Florian Libisch
- Institute for Theoretical Physics, TU Wien, Wiedner Hauptstraße 8-10, Vienna, Austria
| | - Ermin Malic
- Philipps-Universität Marburg, Mainzer Gasse 33, Marburg, Germany
| | - Kirill I Bolotin
- Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin, Germany.
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2
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Fonseca J, Diederich GM, Ovchinnikov D, Yan J, Xiao D, Xu X. Picosecond Ultrasonics in Magnetic Topological Insulator MnBi 2Te 4. NANO LETTERS 2024; 24:10562-10568. [PMID: 39159397 DOI: 10.1021/acs.nanolett.4c01287] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
MnBi2Te4 is a magnetic topological insulator with layered A-type antiferromagnetic order. It exhibits a rich layer- and magnetic-state dependent topological phase diagram; however, much about the coupling between spin, charge, and lattice remains to be explored. In this work, we report that MnBi2Te4 is an excellent acoustic phonon cavity by realizing phonon frequency combs using picosecond ultrasonics. With the generated acoustic phonon wavepackets, we demonstrate that the timing and phase of acoustic echoes can be used to detect the presence of stacking faults between van der Waals layers buried deep within the crystal. Furthermore, by implementing this nondestructive ultrafast optical measurement in conjunction with time-resolved magneto-optical Kerr effect experiments, we uncover that out-of-plane vibrations in MnBi2Te4 do not couple to the magnetic order, i.e. there is no appreciable magnetostriction. Our work points out how a well-developed technique can probe the structural defects and phonon pulse engineering in layered topological insulators.
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Affiliation(s)
- Jordan Fonseca
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Geoffrey M Diederich
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
- Intelligence Community Postdoctoral Research Fellowship Program, University of Washington, Seattle, Washington 98195, United States
| | - Dmitry Ovchinnikov
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Jiaqiang Yan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Di Xiao
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
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3
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Fei F, Mao Y, Fang W, Liu W, Rollins JP, Kondusamy ALN, Lv B, Ping Y, Wang Y, Xiao J. Spin-Mechanical Coupling in 2D Antiferromagnet CrSBr. NANO LETTERS 2024; 24:10467-10474. [PMID: 39096282 DOI: 10.1021/acs.nanolett.4c01751] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/05/2024]
Abstract
Spin-mechanical coupling is vital in diverse fields including spintronics, sensing, and quantum transduction. Two-dimensional (2D) magnetic materials provide a unique platform for investigating spin-mechanical coupling, attributed to their mechanical flexibility and novel spin orderings. However, studying their spin-mechanical coupling presents challenges in probing mechanical deformation and thermodynamic property changes at the nanoscale. Here we use nano-optoelectromechanical interferometry to mechanically detect the phase transition and magnetostriction effect in multilayer CrSBr, an air-stable antiferromagnet with large magnon-exciton coupling. The transitions among antiferromagnetism, spin-canted ferromagnetism, and paramagnetism are visualized. Nontrivial magnetostriction coefficient 2.3 × 10-5 and magnetoelastic coupling strength on the order of 106 J/m3 have been found. Moreover, we demonstrate the substantial tunability of the magnetoelastic constant by nearly 50% via gate-induced strain. Our findings demonstrate the strong spin-mechanical coupling in CrSBr and pave the way for developing sensitive magnetic sensing and efficient quantum transduction at the atomically thin limit.
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Affiliation(s)
- Fan Fei
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Yulu Mao
- Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Wuzhang Fang
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Wenhao Liu
- Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Jack P Rollins
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Aswin L N Kondusamy
- Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Bing Lv
- Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Yuan Ping
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Ying Wang
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
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4
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Zhao Z, Liu Z, Edmonds MT, Medhekar NV. CoX 2Y 4: a family of two-dimensional magnets with versatile magnetic order. NANOSCALE HORIZONS 2024. [PMID: 39140209 DOI: 10.1039/d4nh00103f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
Two-dimensional (2D) magnetic materials offer a promising platform for nanoscale spintronics and for exploration of novel physical phenomena. Here, we predict a diverse range of magnetic orders in cobalt-based 2D single septuple layers CoX2Y4, namely, CoBi2Te4, CoBi2Se2Te2, CoBi2Se4, and CoSb2Te4. Notably, CoBi2Te4 presents intrinsic non-collinear antiferromagnetism (AFM), while the others display collinear AFM. The emergence of AFM in all CoX2Y4 materials is attributed to the antiferromagnetic 90° Co-Te(Se)-Co superexchange coupling. The origin of non-collinear/collinear orders lies in competing Heisenberg exchange interactions within the Co triangular lattice. A pivotal factor governing the non-collinear order of CoBi2Te4 is the vanishingly small ratio of exchange coupling between next-nearest neighbour Co and the nearest neighbour Co (J2/J1 ∼ 0.01). Furthermore, our investigation into strain effects on CoX2Y4 lattices demonstrates the tunability of the magnetic state of CoSb2Te4 from collinear to non-collinear. Our prediction of the unique non-collinear AFM in 2D suggests the potential for observing extraordinary magnetic phenomena in 2D, including non-collinear scattering and magnetic domain walls.
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Affiliation(s)
- Ziyuan Zhao
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia.
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies FLEET, Monash University, Clayton, Victoria 3800, Australia
| | - Zhao Liu
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia.
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies FLEET, Monash University, Clayton, Victoria 3800, Australia
| | - Mark T Edmonds
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies FLEET, Monash University, Clayton, Victoria 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Nikhil V Medhekar
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia.
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies FLEET, Monash University, Clayton, Victoria 3800, Australia
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5
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Guo X, Liu W, Schwartz J, Sung SH, Zhang D, Shimizu M, Kondusamy ALN, Li L, Sun K, Deng H, Jeschke HO, Mazin II, Hovden R, Lv B, Zhao L. Extraordinary phase transition revealed in a van der Waals antiferromagnet. Nat Commun 2024; 15:6472. [PMID: 39085242 PMCID: PMC11291737 DOI: 10.1038/s41467-024-50900-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Accepted: 07/22/2024] [Indexed: 08/02/2024] Open
Abstract
While the surface-bulk correspondence has been ubiquitously shown in topological phases, the relationship between surface and bulk in Landau-like phases is much less explored. Theoretical investigations since 1970s for semi-infinite systems have predicted the possibility of the surface order emerging at a higher temperature than the bulk, clearly illustrating a counterintuitive situation and greatly enriching phase transitions. But experimental realizations of this prediction remain missing. Here, we demonstrate the higher-temperature surface and lower-temperature bulk phase transitions in CrSBr, a van der Waals (vdW) layered antiferromagnet. We leverage the surface sensitivity of electric dipole second harmonic generation (SHG) to resolve surface magnetism, the bulk nature of electric quadrupole SHG to probe bulk spin correlations, and their interference to capture the two magnetic domain states. Our density functional theory calculations show the suppression of ferromagnetic-antiferromagnetic competition at the surface is responsible for this enhanced surface magnetism. Our results not only show counterintuitive, richer phase transitions in vdW magnets, but also provide viable ways to enhance magnetism in their 2D form.
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Affiliation(s)
- Xiaoyu Guo
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Wenhao Liu
- Department of Physics, the University of Texas at Dallas, Richardson, TX, USA
| | - Jonathan Schwartz
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - Suk Hyun Sung
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - Dechen Zhang
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Makoto Shimizu
- Department of Physics, Okayama University, Okayama, Japan
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto, Japan
| | - Aswin L N Kondusamy
- Department of Physics, the University of Texas at Dallas, Richardson, TX, USA
| | - Lu Li
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Kai Sun
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Hui Deng
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Harald O Jeschke
- Research Institute for Interdisciplinary Science, Okayama University, Okayama, Japan
| | - Igor I Mazin
- Department of Physics and Astronomy, and Quantum Science and Engineering Center, George Mason University, Fairfax, VA, USA
| | - Robert Hovden
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
| | - Bing Lv
- Department of Physics, the University of Texas at Dallas, Richardson, TX, USA.
| | - Liuyan Zhao
- Department of Physics, University of Michigan, Ann Arbor, MI, USA.
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6
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Brennan N, Noble CA, Tang J, Ziebel ME, Bae YJ. Important Elements of Spin-Exciton and Magnon-Exciton Coupling. ACS PHYSICAL CHEMISTRY AU 2024; 4:322-327. [PMID: 39069974 PMCID: PMC11273446 DOI: 10.1021/acsphyschemau.4c00010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Revised: 04/08/2024] [Accepted: 04/09/2024] [Indexed: 07/30/2024]
Abstract
The recent discovery of spin-exciton and magnon-exciton coupling in a layered antiferromagnetic semiconductor, CrSBr, is both fundamentally intriguing and technologically significant. This discovery unveils a unique capability to optically access and manipulate spin information using excitons, opening doors to applications in quantum interconnects, quantum photonics, and opto-spintronics. Despite their remarkable potential, materials exhibiting spin-exciton and magnon-exciton coupling remain limited. To broaden the library of such materials, we explore key parameters for achieving and tuning spin-exciton and magnon-exciton couplings. We begin by examining the mechanisms of couplings in CrSBr and drawing comparisons with other recently identified two-dimensional magnetic semiconductors. Furthermore, we propose various promising scenarios for spin-exciton coupling, laying the groundwork for future research endeavors.
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Affiliation(s)
- Nicholas
J. Brennan
- Department
of Physics, Cornell University, Ithaca, New York 14853, United States
| | - Cora A. Noble
- Department
of Chemistry and Chemical Biology, Cornell
University, Ithaca, New York 14853, United States
| | - Jiacheng Tang
- Department
of Chemistry and Chemical Biology, Cornell
University, Ithaca, New York 14853, United States
| | - Michael E. Ziebel
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Youn Jue Bae
- Department
of Chemistry and Chemical Biology, Cornell
University, Ithaca, New York 14853, United States
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7
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Tschudin MA, Broadway DA, Siegwolf P, Schrader C, Telford EJ, Gross B, Cox J, Dubois AEE, Chica DG, Rama-Eiroa R, J G Santos E, Poggio M, Ziebel ME, Dean CR, Roy X, Maletinsky P. Imaging nanomagnetism and magnetic phase transitions in atomically thin CrSBr. Nat Commun 2024; 15:6005. [PMID: 39019853 PMCID: PMC11255258 DOI: 10.1038/s41467-024-49717-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/03/2024] [Accepted: 06/17/2024] [Indexed: 07/19/2024] Open
Abstract
Since their first observation in 2017, atomically thin van der Waals (vdW) magnets have attracted significant fundamental, and application-driven attention. However, their low ordering temperatures, Tc, sensitivity to atmospheric conditions and difficulties in preparing clean large-area samples still present major limitations to further progress, especially amongst van der Waals magnetic semiconductors. The remarkably stable, high-Tc vdW magnet CrSBr has the potential to overcome these key shortcomings, but its nanoscale properties and rich magnetic phase diagram remain poorly understood. Here we use single spin magnetometry to quantitatively characterise saturation magnetization, magnetic anisotropy constants, and magnetic phase transitions in few-layer CrSBr by direct magnetic imaging. We show pristine magnetic phases, devoid of defects on micron length-scales, and demonstrate remarkable air-stability down the monolayer limit. We furthermore address the spin-flip transition in bilayer CrSBr by imaging the phase-coexistence of regions of antiferromagnetically (AFM) ordered and fully aligned spins. Our work will enable the engineering of exotic electronic and magnetic phases in CrSBr and the realization of novel nanomagnetic devices based on this highly promising vdW magnet.
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Affiliation(s)
| | | | | | | | - Evan J Telford
- Department of Physics, Columbia University, New York, NY, USA
- Department of Chemistry, Columbia University, New York, NY, USA
| | - Boris Gross
- Department of Physics, University of Basel, Basel, Switzerland
| | - Jordan Cox
- Department of Chemistry, Columbia University, New York, NY, USA
| | - Adrien E E Dubois
- Department of Physics, University of Basel, Basel, Switzerland
- QNAMI AG, Hofackerstrasse 40 B, Muttenz, CH-4132, Switzerland
| | - Daniel G Chica
- Department of Chemistry, Columbia University, New York, NY, USA
| | - Ricardo Rama-Eiroa
- Donostia International Physics Center (DIPC), 20018, Donostia-San Sebastián, Basque Country, Spain
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
| | - Elton J G Santos
- Donostia International Physics Center (DIPC), 20018, Donostia-San Sebastián, Basque Country, Spain
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK
- Higgs Centre for Theoretical Physics, The University of Edinburgh, Edinburgh, EH9 3FD, UK
| | - Martino Poggio
- Department of Physics, University of Basel, Basel, Switzerland
- Swiss Nanoscience Institute, University of Basel, Basel, Switzerland
| | | | - Cory R Dean
- Department of Physics, Columbia University, New York, NY, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, USA
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8
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Ruiz AM, Rivero-Carracedo G, Rybakov A, Dey S, Baldoví JJ. Towards molecular controlled magnonics. NANOSCALE ADVANCES 2024; 6:3320-3328. [PMID: 38933864 PMCID: PMC11197403 DOI: 10.1039/d4na00230j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 05/01/2024] [Indexed: 06/28/2024]
Abstract
Magnonics is an emerging field broadly recognized as a paradigm shift for information technologies based on the use of spin waves. However, the low flexibility and variety of the existing systems still hamper their applications. Herein, we propose an unprecedented chemical approach to magnonics based on the creation of hybrid molecular/2D heterostructures. We analyse the modulation of the magnetic properties, magnon dispersion and spin dynamics of a single layer of CrSBr after the deposition of sublimable organic molecules via first-principles calculations. Our results predict a modulation of magnetic exchange, a shift in the magnon frequencies and an enhancement of their group velocities up to ∼7%. Interestingly, we find a linear correlation between these effects and the donor character of the molecules. This will pave the way for the design of a new class of magnonic materials that can be selectively tailored by a chemical approach.
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Affiliation(s)
- Alberto M Ruiz
- Instituto de Ciencia Molecular, Universitat de València 46980 Paterna Spain
| | | | - Andrey Rybakov
- Instituto de Ciencia Molecular, Universitat de València 46980 Paterna Spain
| | - Sourav Dey
- Instituto de Ciencia Molecular, Universitat de València 46980 Paterna Spain
| | - José J Baldoví
- Instituto de Ciencia Molecular, Universitat de València 46980 Paterna Spain
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9
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Zhang H, Sanchez JJ, Chu JH, Liu J. Perspective: probing elasto-quantum materials with x-ray techniques and in situanisotropic strain. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:333002. [PMID: 38722324 DOI: 10.1088/1361-648x/ad493e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Accepted: 05/09/2024] [Indexed: 05/22/2024]
Abstract
Anisotropic lattice deformation plays an important role in the quantum mechanics of solid state physics. The possibility of mediating the competition and cooperation among different order parameters by applyingin situstrain/stress on quantum materials has led to discoveries of a variety of elasto-quantum effects on emergent phenomena. It has become increasingly critical to have the capability of combining thein situstrain tuning with x-ray techniques, especially those based on synchrotrons, to probe the microscopic elasto-responses of the lattice, spin, charge, and orbital degrees of freedom. Herein, we briefly review the recent studies that embarked on utilizing elasto-x-ray characterizations on representative material systems and demonstrated the emerging opportunities enabled by this method. With that, we further discuss the promising prospect in this rising area of quantum materials research and the bright future of elasto-x-ray techniques.
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Affiliation(s)
- Han Zhang
- Changzhou University, Changzhou, Jiangsu 213001, People's Republic of China
| | - Joshua J Sanchez
- Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Jiun-Haw Chu
- Department of Physics, University of Washington, Seattle, WA 98195, United States of America
| | - Jian Liu
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996, United States of America
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10
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Jani H, Harrison J, Hooda S, Prakash S, Nandi P, Hu J, Zeng Z, Lin JC, Godfrey C, Omar GJ, Butcher TA, Raabe J, Finizio S, Thean AVY, Ariando A, Radaelli PG. Spatially reconfigurable antiferromagnetic states in topologically rich free-standing nanomembranes. NATURE MATERIALS 2024; 23:619-626. [PMID: 38374414 PMCID: PMC11068574 DOI: 10.1038/s41563-024-01806-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2023] [Accepted: 01/11/2024] [Indexed: 02/21/2024]
Abstract
Antiferromagnets hosting real-space topological textures are promising platforms to model fundamental ultrafast phenomena and explore spintronics. However, they have only been epitaxially fabricated on specific symmetry-matched substrates, thereby preserving their intrinsic magneto-crystalline order. This curtails their integration with dissimilar supports, restricting the scope of fundamental and applied investigations. Here we circumvent this limitation by designing detachable crystalline antiferromagnetic nanomembranes of α-Fe2O3. First, we show-via transmission-based antiferromagnetic vector mapping-that flat nanomembranes host a spin-reorientation transition and rich topological phenomenology. Second, we exploit their extreme flexibility to demonstrate the reconfiguration of antiferromagnetic states across three-dimensional membrane folds resulting from flexure-induced strains. Finally, we combine these developments using a controlled manipulator to realize the strain-driven non-thermal generation of topological textures at room temperature. The integration of such free-standing antiferromagnetic layers with flat/curved nanostructures could enable spin texture designs via magnetoelastic/geometric effects in the quasi-static and dynamical regimes, opening new explorations into curvilinear antiferromagnetism and unconventional computing.
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Affiliation(s)
- Hariom Jani
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK.
- Department of Physics, National University of Singapore, Singapore, Singapore.
| | - Jack Harrison
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Sonu Hooda
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Saurav Prakash
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Proloy Nandi
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Junxiong Hu
- Department of Physics, National University of Singapore, Singapore, Singapore.
| | - Zhiyang Zeng
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Jheng-Cyuan Lin
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Charles Godfrey
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Ganesh Ji Omar
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Tim A Butcher
- Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland
| | - Jörg Raabe
- Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland
| | - Simone Finizio
- Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
| | - Aaron Voon-Yew Thean
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, Singapore
| | - A Ariando
- Department of Physics, National University of Singapore, Singapore, Singapore.
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, Singapore.
| | - Paolo G Radaelli
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK.
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11
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Ziebel ME, Feuer ML, Cox J, Zhu X, Dean CR, Roy X. CrSBr: An Air-Stable, Two-Dimensional Magnetic Semiconductor. NANO LETTERS 2024; 24:4319-4329. [PMID: 38567828 DOI: 10.1021/acs.nanolett.4c00624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
The discovery of magnetic order at the 2D limit has sparked new exploration of van der Waals magnets for potential use in spintronics, magnonics, and quantum information applications. However, many of these materials feature low magnetic ordering temperatures and poor air stability, limiting their fabrication into practical devices. In this Mini-Review, we present a promising material for fundamental studies and functional use: CrSBr, an air-stable, two-dimensional magnetic semiconductor. Our discussion highlights experimental research on bulk CrSBr, including quasi-1D semiconducting properties, A-type antiferromagnetic order (TN = 132 K), and strong coupling between its electronic and magnetic properties. We then discuss the behavior of monolayer and few-layer flakes and present a perspective on promising avenues for further studies on CrSBr.
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Affiliation(s)
- Michael E Ziebel
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Margalit L Feuer
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Jordan Cox
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Xiaoyang Zhu
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Cory R Dean
- Columbia University, Department of Physics, New York, New York 10027, United States
| | - Xavier Roy
- Columbia University, Department of Chemistry, New York, New York 10027, United States
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12
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Canton-Vitoria R, Kitaura R. Insulating 6,6-Phenyl-C61-butyric Acid Methyl Ester on Transition-Metal Dichalcogenides: Impact of the Hybrid Materials on the Optical and Electrical Properties. Chemistry 2024; 30:e202400150. [PMID: 38302733 DOI: 10.1002/chem.202400150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2024] [Revised: 01/30/2024] [Accepted: 01/31/2024] [Indexed: 02/03/2024]
Abstract
In this study we develop a strategy to insulate 6,6 -Phenyl C61 butyric acid methyl ester (PCBM) on the basal plane of transition metal dichalcogenides (TMDs). Concretely single layers of MoS2, MoSe2, MoTe2, WS2, WSe2 and WTe2 and ultrathin MoO2 and WO2 were grown via chemical vapor deposition (CVD). Then, the thiol group of a PCBM modified with cysteine reacts with the chalcogen vacancies on the basal plane of TMDs, yielding PCBM-MoS2, PCBM-MoSe2, PCBM-WS2, PCBM-WSe2, PCBM-WTe2, PCBM-MoO2 and PCBM-WO2. Afterwards, all the hybrid materials were characterized using several techniques, including XPS, Raman spectroscopy, TEM, AFM, and cyclic voltammetry. Furthermore, PCBM causes a unique optical and electrical impact in every TMDs. For MoS2 devices, the conductivity and photoluminescence (PL) emission achieve a remarkable enhancement of 1700 % and 200 % in PCBM-MoS2 hybrids. Similarly, PCBM-MoTe2 hybrids exhibit a 2-fold enhancement in PL emission at 1.1 eV. On the other hand, PCBM-MoSe2, PCBM-WSe2 and PCBM-WS2 hybrids exhibited a new interlayer exciton at 1.29-1.44, 1.7 and 1.37-154 eV along with an enhancement of the photo-response by 2400, 3200 and 600 %, respectively. Additionally, PCBM-WTe2 and PCBM-WO2 showed a modest photo-response, in sharp contrast with pristine WTe2 or WO2 which archive pure metallic character.
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Affiliation(s)
- Ruben Canton-Vitoria
- Department of Chemistry, Nagoya University, Nagoya, Aichi, 464-8602, Japan
- Theoretical and Physical Chemistry Institute Department of Chemistry, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, 11635, Athens, Greec
| | - Ryo Kitaura
- Department of Chemistry, Nagoya University, Nagoya, Aichi, 464-8602, Japan
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
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13
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Meineke C, Schlosser J, Zizlsperger M, Liebich M, Nilforoushan N, Mosina K, Terres S, Chernikov A, Sofer Z, Huber MA, Florian M, Kira M, Dirnberger F, Huber R. Ultrafast Exciton Dynamics in the Atomically Thin van der Waals Magnet CrSBr. NANO LETTERS 2024; 24:4101-4107. [PMID: 38507732 PMCID: PMC11010225 DOI: 10.1021/acs.nanolett.3c05010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 03/08/2024] [Accepted: 03/11/2024] [Indexed: 03/22/2024]
Abstract
Among atomically thin semiconductors, CrSBr stands out as both its bulk and monolayer forms host tightly bound, quasi-one-dimensional excitons in a magnetic environment. Despite its pivotal importance for solid-state research, the exciton lifetime has remained unknown. While terahertz polarization probing can directly trace all excitons, independently of interband selection rules, the corresponding large far-field foci substantially exceed the lateral sample dimensions. Here, we combine terahertz polarization spectroscopy with near-field microscopy to reveal a femtosecond decay of paramagnetic excitons in a monolayer of CrSBr, which is 30 times shorter than the bulk lifetime. We unveil low-energy fingerprints of bound and unbound electron-hole pairs in bulk CrSBr and extract the nonequilibrium dielectric function of the monolayer in a model-free manner. Our results demonstrate the first direct access to the ultrafast dielectric response of quasi-one-dimensional excitons in CrSBr, potentially advancing the development of quantum devices based on ultrathin van der Waals magnets.
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Affiliation(s)
- Christian Meineke
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Jakob Schlosser
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Martin Zizlsperger
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Marlene Liebich
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Niloufar Nilforoushan
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Kseniia Mosina
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, 166 28 Prague 6, Czech Republic
| | - Sophia Terres
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence, Dresden University of Technology, 01187 Dresden, Germany
| | - Alexey Chernikov
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence, Dresden University of Technology, 01187 Dresden, Germany
| | - Zdenek Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, 166 28 Prague 6, Czech Republic
| | - Markus A. Huber
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Matthias Florian
- Department
of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Mackillo Kira
- Department
of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Florian Dirnberger
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence, Dresden University of Technology, 01187 Dresden, Germany
| | - Rupert Huber
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
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14
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McRae AC, Wei G, Huang L, Yigen S, Tayari V, Champagne AR. Mechanical Control of Quantum Transport in Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313629. [PMID: 38558481 DOI: 10.1002/adma.202313629] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 03/16/2024] [Indexed: 04/04/2024]
Abstract
2D materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain can completely turn off the conductance of ballistic graphene or switch on/off the superconducting phase of magic-angle bilayer graphene. This article reports measurements of quantum transport in strained graphene transistors which agree quantitatively with models based on mechanically-induced gauge potentials. A scalar potential is mechanically induced in situ to modify graphene's work function by up to 25 meV. Mechanically generated vector potentials suppress the ballistic conductance of graphene by up to 30% and control its quantum interferences. The data are measured with a custom experimental platform able to precisely tune both the mechanics and electrostatics of suspended graphene transistors at low-temperature over a broad range of strain (up to 2.6%). This work opens many opportunities to harness quantitative strain effects in 2DM quantum transport and technologies.
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Affiliation(s)
- Andrew C McRae
- Department of Physics, Concordia University, Montréal, Québec, H4B 1R6, Canada
| | - Guoqing Wei
- Department of Physics, Concordia University, Montréal, Québec, H4B 1R6, Canada
| | - Linxiang Huang
- Department of Physics, Concordia University, Montréal, Québec, H4B 1R6, Canada
| | - Serap Yigen
- Department of Physics, Concordia University, Montréal, Québec, H4B 1R6, Canada
| | - Vahid Tayari
- Department of Physics, Concordia University, Montréal, Québec, H4B 1R6, Canada
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15
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Wu H, Chen L, Malinowski P, Jang BG, Deng Q, Scott K, Huang J, Ruff JPC, He Y, Chen X, Hu C, Yue Z, Oh JS, Teng X, Guo Y, Klemm M, Shi C, Shi Y, Setty C, Werner T, Hashimoto M, Lu D, Yilmaz T, Vescovo E, Mo SK, Fedorov A, Denlinger JD, Xie Y, Gao B, Kono J, Dai P, Han Y, Xu X, Birgeneau RJ, Zhu JX, da Silva Neto EH, Wu L, Chu JH, Si Q, Yi M. Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet. Nat Commun 2024; 15:2739. [PMID: 38548765 PMCID: PMC10978849 DOI: 10.1038/s41467-024-46862-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Accepted: 03/13/2024] [Indexed: 04/01/2024] Open
Abstract
Non-volatile phase-change memory devices utilize local heating to toggle between crystalline and amorphous states with distinct electrical properties. Expanding on this kind of switching to two topologically distinct phases requires controlled non-volatile switching between two crystalline phases with distinct symmetries. Here, we report the observation of reversible and non-volatile switching between two stable and closely related crystal structures, with remarkably distinct electronic structures, in the near-room-temperature van der Waals ferromagnet Fe5-δGeTe2. We show that the switching is enabled by the ordering and disordering of Fe site vacancies that results in distinct crystalline symmetries of the two phases, which can be controlled by a thermal annealing and quenching method. The two phases are distinguished by the presence of topological nodal lines due to the preserved global inversion symmetry in the site-disordered phase, flat bands resulting from quantum destructive interference on a bipartite lattice, and broken inversion symmetry in the site-ordered phase.
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Affiliation(s)
- Han Wu
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Lei Chen
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Paul Malinowski
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Bo Gyu Jang
- Theoretical Division and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Republic of Korea
| | - Qinwen Deng
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Kirsty Scott
- Department of Physics, Yale University, New Haven, CT, USA
- Energy Sciences Institute, Yale University, West Haven, CT, USA
- Department of Physics and Astronomy, University of California, Davis, CA, USA
- Department of Applied Physics, Yale University, New Haven, CT, USA
| | - Jianwei Huang
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Jacob P C Ruff
- Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY, USA
| | - Yu He
- Department of Physics, University of California, Berkeley, CA, USA
| | - Xiang Chen
- Department of Physics, University of California, Berkeley, CA, USA
| | - Chaowei Hu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Ziqin Yue
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Ji Seop Oh
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Xiaokun Teng
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Yucheng Guo
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Mason Klemm
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Yue Shi
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Chandan Setty
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Tyler Werner
- Department of Applied Physics, Yale University, New Haven, CT, USA
| | - Makoto Hashimoto
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Donghui Lu
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Turgut Yilmaz
- National Synchrotron Light Source II, Brookhaven National Lab, Upton, NY, USA
| | - Elio Vescovo
- National Synchrotron Light Source II, Brookhaven National Lab, Upton, NY, USA
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Alexei Fedorov
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | | | - Yaofeng Xie
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Bin Gao
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Junichiro Kono
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
- Departments of Electrical and Computer Engineering, Rice University, Houston, TX, USA
| | - Pengcheng Dai
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Robert J Birgeneau
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Jian-Xin Zhu
- Theoretical Division and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Eduardo H da Silva Neto
- Department of Physics, Yale University, New Haven, CT, USA
- Energy Sciences Institute, Yale University, West Haven, CT, USA
- Department of Physics and Astronomy, University of California, Davis, CA, USA
- Department of Applied Physics, Yale University, New Haven, CT, USA
| | - Liang Wu
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Jiun-Haw Chu
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Qimiao Si
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA
| | - Ming Yi
- Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA.
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16
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Belyaeva L, Ludwig C, Lai YC, Chou CC, Shih CJ. Uniform, Strain-Free, Large-Scale Graphene and h-BN Monolayers Enabled by Hydrogel Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307054. [PMID: 37867241 DOI: 10.1002/smll.202307054] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Revised: 10/05/2023] [Indexed: 10/24/2023]
Abstract
Translation of the unique properties of 2D monolayers from non-scalable micron-sized samples to macroscopic scale is a longstanding challenge obstructed by the substrate-induced strains, interface nonuniformities, and sample-to-sample variations inherent to the scalable fabrication methods. So far, the most successful strategies to reduce strain in graphene are the reduction of the interface roughness and lattice mismatch by using hexagonal boron nitride (h-BN), with the drawback of limited uniformity and applicability to other 2D monolayers, and liquid water, which is not compatible with electronic devices. This work demonstrates a new class of substrates based on hydrogels that overcome these limitations and excel h-BN and water substrates at strain relaxation enabling superiorly uniform and reproducible centimeter-sized sheets of unstrained monolayers. The ultimate strain relaxation and uniformity are rationalized by the extreme structural adaptability of the hydrogel surface owing to its high liquid content and low Young's modulus, and are universal to all 2D materials irrespective of their crystalline structure. Such platforms can be integrated into field effect transistors and demonstrate enhanced charge carrier mobilities in graphene. These results present a universal strategy for attaining uniform and strain-free sheets of 2D materials and underline the opportunities enabled by interfacing them with soft matter.
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Affiliation(s)
- Liubov Belyaeva
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, CH-8093, Switzerland
| | - Cyril Ludwig
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, CH-8093, Switzerland
| | - Yu-Cheng Lai
- Institute of Applied Mechanics, College of Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan
| | - Chia-Ching Chou
- Institute of Applied Mechanics, College of Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei, 106, Taiwan
| | - Chih-Jen Shih
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, CH-8093, Switzerland
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17
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Cui F, He K, Wu S, Zhang H, Lu Y, Li Z, Hu J, Pan S, Zhu L, Huan Y, Li B, Duan X, Ji Q, Zhao X, Zhang Y. Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides. ACS NANO 2024; 18:6276-6285. [PMID: 38354364 DOI: 10.1021/acsnano.3c10609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Emerging 2D chromium-based dichalcogenides (CrXn (X = S, Se, Te; 0 < n ≤ 2)) have provoked enormous interests due to their abundant structures, intriguing electronic and magnetic properties, excellent environmental stability, and great application potentials in next generation electronics and spintronics devices. Achieving stoichiometry-controlled synthesis of 2D CrXn is of paramount significance for such envisioned investigations. Herein, we report the stoichiometry-controlled syntheses of 2D chromium selenide (CrxSey) materials (rhombohedral Cr2Se3 and monoclinic Cr3Se4) via a Cr-self-intercalation route by designing two typical chemical vapor deposition (CVD) strategies. We have also clarified the different growth mechanisms, distinct chemical compositions, and crystal structures of the two type materials. Intriguingly, we reveal that the ultrathin Cr2Se3 nanosheets exhibit a metallic feature, while the Cr3Se4 nanosheets present a transition from p-type semiconductor to metal upon increasing the flake thickness. Moreover, we have also uncovered the ferromagnetic properties of 2D Cr2Se3 and Cr3Se4 below ∼70 K and ∼270 K, respectively. Briefly, this research should promote the stoichiometric-ratio controllable syntheses of 2D magnetic materials, and the property explorations toward next generation spintronics and magneto-optoelectronics related applications.
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Affiliation(s)
- Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Kun He
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Shengqiang Wu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Hongmei Zhang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Zhenzhu Li
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies and School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Bo Li
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
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18
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Chen K, Yan X, Deng J, Bo C, Song M, Kan D, He J, Huo W, Liu JZ. Out-of-plane pressure and electron doping inducing phase and magnetic transitions in GeC/CrS 2/GeC van der Waals heterostructure. NANOSCALE 2024; 16:3693-3700. [PMID: 38288860 DOI: 10.1039/d3nr05610d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Out-of-plane pressure and electron doping can affect interlayer interactions in van der Waals materials, modifying their crystal structure and physical and chemical properties. In this study, we used magnetic monolayer 1T/1T'-CrS2 and high symmetry 2D-honeycomb material GeC to construct a GeC/CrS2/GeC triple layered van der Waals heterostructure (vdWH). Based on density functional theory calculations, we found that applying out-of-plane strain and doping with electrons could induce a 1T'-to-1T phase transition and consequently the ferromagnetic (FM)-to-antiferromagnetic (AFM) transition in the CrS2 layer. Such a phase and magnetic transition arises from the pressure and electron-induced interlayer interaction enhancement. The electron doping can effectively decrease the critical compressive stress from ∼4.3 GPa (charge neutrality) to ∼664 MPa (Q = 9 × 10-3 e- per atom) for the FM-to-AFM transition. These properties could be used to fabricate and program the 2D lateral FM/AFM heterostructures for artificial controlled spin texture and miniaturized spintronic devices.
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Affiliation(s)
- Kaiyun Chen
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Xue Yan
- Department of Mechanical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia.
| | - Junkai Deng
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Cunle Bo
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Mengshan Song
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Dongxiao Kan
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Jiabei He
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Wangtu Huo
- Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia.
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19
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Gao B, Xu S, Xu Q. CO 2 -Induced Spin-Lattice Coupling for Strong Magnetoelectric Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2303692. [PMID: 37975158 PMCID: PMC10837372 DOI: 10.1002/advs.202303692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2023] [Revised: 10/12/2023] [Indexed: 11/19/2023]
Abstract
The preparation of 2D magnetoelectric (ME) nanomaterials with strong ME coupling is crucial for the fast reading and writing processes in the next generation of storage devices. Herein, 2D BaTiO3 (BTO)-CoFe2 O4 (CFO) ME nanocomposites are prepared through a substrate-free coupling strategy using supercritical CO2 . Such 2D BTO-CFO with strong coupling is built through alternating in-plane and out-of-plane epitaxy stacking, leading to remarkable mutual biaxial strain effects for spin-lattice coupling. As a results, such strain effect significantly enhances the ferroelectricity of BTO and the ferrimagnetism of CFO, where an unexceptionally high ME coupling coefficient of (325.8 mV cm-1 Oe-1 ) is obtained for the BTO-CFO nanocomposites.
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Affiliation(s)
- Bo Gao
- College of Materials Science & Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Song Xu
- Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Qun Xu
- College of Materials Science & Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450001, P. R. China
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20
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Liu J, Zhou Y, Yepez Rodriguez S, Delmont MA, Welser RA, Ho T, Sirica N, McClure K, Vilmercati P, Ziller JW, Mannella N, Sanchez-Yamagishi JD, Pettes MT, Wu R, Jauregui LA. Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe 5. Nat Commun 2024; 15:332. [PMID: 38184667 PMCID: PMC10771548 DOI: 10.1038/s41467-023-44547-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Accepted: 12/19/2023] [Indexed: 01/08/2024] Open
Abstract
The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. Here, we apply significant and controllable strain to high-quality HfTe5 samples and perform electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase. After applying high strain to HfTe5 and converting it into a strong topological insulator, we found that the resistivity of the sample increased by 190,500% and that the electronic transport was dominated by the topological surface states at cryogenic temperatures. Our results demonstrate the suitability of HfTe5 as a material for engineering topological properties, with the potential to generalize this approach to study topological phase transitions in van der Waals materials and heterostructures.
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Affiliation(s)
- Jinyu Liu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Yinong Zhou
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | | | - Matthew A Delmont
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, CA, 92697, USA
| | - Robert A Welser
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Triet Ho
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, CA, 92697, USA
| | - Nicholas Sirica
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Kaleb McClure
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Paolo Vilmercati
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Joseph W Ziller
- Department of Chemistry, University of California, Irvine, CA, 92697, USA
| | - Norman Mannella
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | | | - Michael T Pettes
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Luis A Jauregui
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA.
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21
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Houmes MJA, Baglioni G, Šiškins M, Lee M, Esteras DL, Ruiz AM, Mañas-Valero S, Boix-Constant C, Baldoví JJ, Coronado E, Blanter YM, Steeneken PG, van der Zant HSJ. Magnetic order in 2D antiferromagnets revealed by spontaneous anisotropic magnetostriction. Nat Commun 2023; 14:8503. [PMID: 38129381 PMCID: PMC10739885 DOI: 10.1038/s41467-023-44180-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Accepted: 12/04/2023] [Indexed: 12/23/2023] Open
Abstract
The temperature dependent order parameter provides important information on the nature of magnetism. Using traditional methods to study this parameter in two-dimensional (2D) magnets remains difficult, however, particularly for insulating antiferromagnetic (AF) compounds. Here, we show that its temperature dependence in AF MPS3 (M(II) = Fe, Co, Ni) can be probed via the anisotropy in the resonance frequency of rectangular membranes, mediated by a combination of anisotropic magnetostriction and spontaneous staggered magnetization. Density functional calculations followed by a derived orbital-resolved magnetic exchange analysis confirm and unravel the microscopic origin of this magnetization-induced anisotropic strain. We further show that the temperature and thickness dependent order parameter allows to deduce the material's critical exponents characterising magnetic order. Nanomechanical sensing of magnetic order thus provides a future platform to investigate 2D magnetism down to the single-layer limit.
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Affiliation(s)
- Maurits J A Houmes
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands.
| | - Gabriele Baglioni
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Makars Šiškins
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Martin Lee
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Dorye L Esteras
- Instituto de Ciencia Molecular (ICMol), Universitat de València, c/Catedrático José Beltrán 2, 46980, Paterna, Spain
| | - Alberto M Ruiz
- Instituto de Ciencia Molecular (ICMol), Universitat de València, c/Catedrático José Beltrán 2, 46980, Paterna, Spain
| | - Samuel Mañas-Valero
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
- Instituto de Ciencia Molecular (ICMol), Universitat de València, c/Catedrático José Beltrán 2, 46980, Paterna, Spain
| | - Carla Boix-Constant
- Instituto de Ciencia Molecular (ICMol), Universitat de València, c/Catedrático José Beltrán 2, 46980, Paterna, Spain
| | - Jose J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universitat de València, c/Catedrático José Beltrán 2, 46980, Paterna, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol), Universitat de València, c/Catedrático José Beltrán 2, 46980, Paterna, Spain
| | - Yaroslav M Blanter
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Peter G Steeneken
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD, Delft, The Netherlands
| | - Herre S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
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22
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Zhou H, Auerbach N, Uzan M, Zhou Y, Banu N, Zhi W, Huber ME, Watanabe K, Taniguchi T, Myasoedov Y, Yan B, Zeldov E. Imaging quantum oscillations and millitesla pseudomagnetic fields in graphene. Nature 2023; 624:275-281. [PMID: 37993718 PMCID: PMC10719110 DOI: 10.1038/s41586-023-06763-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2023] [Accepted: 10/19/2023] [Indexed: 11/24/2023]
Abstract
The exceptional control of the electronic energy bands in atomically thin quantum materials has led to the discovery of several emergent phenomena1. However, at present there is no versatile method for mapping the local band structure in advanced two-dimensional materials devices in which the active layer is commonly embedded in the insulating layers and metallic gates. Using a scanning superconducting quantum interference device, here we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which shows several highly tunable bands2-4. By resolving thermodynamic quantum oscillations spanning more than 100 Landau levels in low magnetic fields, we reconstruct the band structure and its evolution with the displacement field with excellent precision and nanoscale spatial resolution. Moreover, by developing Landau-level interferometry, we show shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially induced large strain, which leads to pseudomagnetic fields of hundreds of tesla5-7, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by 1 millidegree, two orders of magnitude lower than the typical angle disorder in twisted bilayer graphene8-11. This ability to resolve the local band structure and strain at the nanoscale level enables the characterization and use of tunable band engineering in practical van der Waals devices.
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Affiliation(s)
- Haibiao Zhou
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Nadav Auerbach
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Matan Uzan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Yaozhang Zhou
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Nasrin Banu
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Weifeng Zhi
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Martin E Huber
- Departments of Physics and Electrical Engineering, University of Colorado Denver, Denver, CO, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Yuri Myasoedov
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Eli Zeldov
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
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23
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Naumis GG, Herrera SA, Poudel SP, Nakamura H, Barraza-Lopez S. Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:016502. [PMID: 37879327 DOI: 10.1088/1361-6633/ad06db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
This is an update of a previous review (Naumiset al2017Rep. Prog. Phys.80096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation (P) in graphene, (ii) time-dependent strain and its impact on graphene's electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisationPon hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic (σ), electric (P) and magnetic (M) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI2. The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.
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Affiliation(s)
- Gerardo G Naumis
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Saúl A Herrera
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Shiva P Poudel
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Hiro Nakamura
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Salvador Barraza-Lopez
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
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24
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Xie K, Zhang XW, Xiao D, Cao T. Engineering Magnetic Phases of Layered Antiferromagnets by Interfacial Charge Transfer. ACS NANO 2023; 17:22684-22690. [PMID: 37961983 DOI: 10.1021/acsnano.3c07125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/15/2023]
Abstract
Van der Waals heterostructures composed of distinct layered materials can display behaviors entirely different from those of each individual layer due to interfacial coupling. Here we investigate the manipulation of magnetic phases in two-dimensional magnets through interfacial charge transfer in heterostructures of magnetic and nonmagnetic layers. This is demonstrated by first-principles calculations, which unveil a transition toward the ferromagnetic phase by stacking antiferromagnetic bilayer CrSBr on graphene. Using an effective model consisting of two electronically coupled single layers, we show that the antiferromagnetic to ferromagnetic magnetic phase transition occurs due to interfacial charge transfer, which enhances ferromagnetism. We further reveal that the magnetic phase transition can also be induced by electron and hole carriers and demonstrate that the phase transition is a spin-canting process. This allows for precise gate-control of noncollinear magnetism on demand. Our work predicts interfacial charge transfer as a potent mechanism to tune magnetic phases in van der Waals heterostructures and creates opportunities for spintronic applications.
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Affiliation(s)
- Kaichen Xie
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Xiao-Wei Zhang
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Di Xiao
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
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25
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Jo J, Peisen Y, Yang H, Mañas-Valero S, Baldoví JJ, Lu Y, Coronado E, Casanova F, Bergeret FS, Gobbi M, Hueso LE. Local control of superconductivity in a NbSe 2/CrSBr van der Waals heterostructure. Nat Commun 2023; 14:7253. [PMID: 37945570 PMCID: PMC10636142 DOI: 10.1038/s41467-023-43111-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 10/31/2023] [Indexed: 11/12/2023] Open
Abstract
Two-dimensional magnets and superconductors are emerging as tunable building-blocks for quantum computing and superconducting spintronic devices, and have been used to fabricate all two-dimensional versions of traditional devices, such as Josephson junctions. However, novel devices enabled by unique features of two-dimensional materials have not yet been demonstrated. Here, we present NbSe2/CrSBr van der Waals superconducting spin valves that exhibit infinite magnetoresistance and nonreciprocal charge transport. These responses arise from a unique metamagnetic transition in CrSBr, which controls the presence of localized stray fields suitably oriented to suppress the NbSe2 superconductivity in nanoscale regions and to break time reversal symmetry. Moreover, by integrating different CrSBr crystals in a lateral heterostructure, we demonstrate a superconductive spin valve characterized by multiple stable resistance states. Our results show how the unique physical properties of layered materials enable the realization of high-performance quantum devices based on novel working principles.
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Affiliation(s)
- Junhyeon Jo
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
| | - Yuan Peisen
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Haozhe Yang
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - José J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - Yao Lu
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - F Sebastian Bergeret
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain
- Donostia International Physics Center (DIPC), E-20018, Donostia-San Sebastián, Spain
| | - Marco Gobbi
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
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26
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Pawbake A, Pelini T, Mohelsky I, Jana D, Breslavetz I, Cho CW, Orlita M, Potemski M, Measson MA, Wilson NP, Mosina K, Soll A, Sofer Z, Piot BA, Zhitomirsky ME, Faugeras C. Magneto-Optical Sensing of the Pressure Driven Magnetic Ground States in Bulk CrSBr. NANO LETTERS 2023; 23:9587-9593. [PMID: 37823538 DOI: 10.1021/acs.nanolett.3c03216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Competition between exchange interactions and magnetocrystalline anisotropy may bring new magnetic states that are of great current interest. An applied hydrostatic pressure can further be used to tune their balance. In this work, we investigate the magnetization process of a biaxial antiferromagnet in an external magnetic field applied along the easy axis. We find that the single metamagnetic transition of the Ising type observed in this material under ambient pressure transforms under hydrostatic pressure into two transitions, a first-order spin-flop transition followed by a second-order transition toward a polarized ferromagnetic state near saturation. This reversible tuning into a new magnetic phase is obtained in layered bulk CrSBr at low temperature by varying the interlayer distance using high hydrostatic pressure, which efficiently acts on the interlayer magnetic exchange and is probed by magneto-optical spectroscopy.
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Affiliation(s)
- Amit Pawbake
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Thomas Pelini
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Ivan Mohelsky
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Dipankar Jana
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Ivan Breslavetz
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Chang-Woo Cho
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Milan Orlita
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Marek Potemski
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
- CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland
| | | | - Nathan P Wilson
- Walter Schottky Institut, Physics Department and MCQST, Technische Universitat Munchen, 85748 Garching, Germany
| | - Kseniia Mosina
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Aljoscha Soll
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Benjamin A Piot
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
| | - Mike E Zhitomirsky
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG, Pheliqs, 38000 Grenoble, France
- Institut Laue-Langevin, F-38042 Grenoble Cedex 9, France
| | - Clement Faugeras
- LNCMI, UPR 3228, CNRS, EMFL, Université Grenoble Alpes, 38000 Grenoble, France
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27
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Zhang Y, Wang Y, Yang W, Zhang H, Jia J. Strain-tunable magnetism and topological states in layered VBi 2Te 4. Phys Chem Chem Phys 2023; 25:28189-28195. [PMID: 37819247 DOI: 10.1039/d3cp03866a] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Similar to the magnetic topological insulator of MnBi2Te4, recent studies have demonstrated that VBi2Te4 is also an ideal candidate to explore many intriguing quantum states. Different from the strong interlayer antiferromagnetic (AFM) coupling in layered MnBi2Te4, based on first-principles calculations, we find that the energy difference between AFM and ferromagnetic (FM) orders in layered VBi2Te4 is much smaller than that of MnBi2Te4. Specifically, it is found that the interlayer FM coupling can be readily achieved by applying strain. Further electronic band structures reveal that the VBi2Te4 bilayer is a time-reversal symmetry broken quantum spin Hall insulator with a spin Chern number of CS = 1, which is essentially different from the QAH state with a Chern number of C = 1 in the MnBi2Te4 bilayer. Most strikingly, the topological states of the magnetic VBi2Te4 bilayer can be well tuned by strain, whose topological phase diagram is mapped out as a function of strain by employing continuum model analyses. All of these results indicate that the layered VBi2Te4 not only enriches the family of magnetic topological materials, but also provides a promising platform to explore more exotic quantum phenomena.
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Affiliation(s)
- Yaling Zhang
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
| | - Yingying Wang
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
| | - Wenjia Yang
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
| | - Huisheng Zhang
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
- College of Physics and Electronic Information, Shanxi Normal University, Taiyuan 030006, China
| | - Jianfeng Jia
- College of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030006, China.
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28
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Kim D, Pandey J, Jeong J, Cho W, Lee S, Cho S, Yang H. Phase Engineering of 2D Materials. Chem Rev 2023; 123:11230-11268. [PMID: 37589590 DOI: 10.1021/acs.chemrev.3c00132] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.
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Affiliation(s)
- Dohyun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juhi Pandey
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juyeong Jeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Woohyun Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungyeon Lee
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Suyeon Cho
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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29
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Cham TMJ, Dorrian RJ, Zhang XS, Dismukes AH, Chica DG, May AF, Roy X, Muller DA, Ralph DC, Luo YK. Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field-Free Spin-Orbit-Torque Switching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305739. [PMID: 37800466 DOI: 10.1002/adma.202305739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 09/06/2023] [Indexed: 10/07/2023]
Abstract
Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3 GeTe2 (FGT) are reported. The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non-zero exchange bias at 30 K.
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Affiliation(s)
| | | | | | - Avalon H Dismukes
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Daniel G Chica
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Andrew F May
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - David A Muller
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
| | - Daniel C Ralph
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
| | - Yunqiu Kelly Luo
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
- Department of Physics and Astronomy, University of Southern California, Los Angeles, CA, 90089, USA
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30
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Long F, Ghorbani-Asl M, Mosina K, Li Y, Lin K, Ganss F, Hübner R, Sofer Z, Dirnberger F, Kamra A, Krasheninnikov AV, Prucnal S, Helm M, Zhou S. Ferromagnetic Interlayer Coupling in CrSBr Crystals Irradiated by Ions. NANO LETTERS 2023; 23:8468-8473. [PMID: 37669544 PMCID: PMC10540254 DOI: 10.1021/acs.nanolett.3c01920] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Revised: 08/31/2023] [Indexed: 09/07/2023]
Abstract
Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly, the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggests that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers.
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Affiliation(s)
- Fangchao Long
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU
Dresden, 01062 Dresden, Germany
| | - Mahdi Ghorbani-Asl
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Kseniia Mosina
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Yi Li
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU
Dresden, 01062 Dresden, Germany
| | - Kaiman Lin
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- University
of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai
Jiao Tong University, Shanghai, 200240, China
| | - Fabian Ganss
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - René Hübner
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Zdenek Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Florian Dirnberger
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence
ct.qmat, Technische Universität Dresden, 01069 Dresden, Germany
| | - Akashdeep Kamra
- Condensed
Matter Physics Center (IFIMAC) and Departamento de Física Teórica
de la Materia Condensada, Universidad Autónoma
de Madrid, Ciudad Universitaria
de Cantoblanco, 28049, Madrid, Spain
| | - Arkady V. Krasheninnikov
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Slawomir Prucnal
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Manfred Helm
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU
Dresden, 01062 Dresden, Germany
| | - Shengqiang Zhou
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
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31
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Wang T, Zhang D, Yang S, Lin Z, Chen Q, Yang J, Gong Q, Chen Z, Ye Y, Liu W. Magnetically-dressed CrSBr exciton-polaritons in ultrastrong coupling regime. Nat Commun 2023; 14:5966. [PMID: 37749106 PMCID: PMC10520032 DOI: 10.1038/s41467-023-41688-7] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Accepted: 09/14/2023] [Indexed: 09/27/2023] Open
Abstract
Over the past few decades, exciton-polaritons have attracted substantial research interest due to their half-light-half-matter bosonic nature. Coupling exciton-polaritons with magnetic orders grants access to rich many-body phenomena, but has been limited by the availability of material systems that exhibit simultaneous exciton resonances and magnetic ordering. Here we report magnetically-dressed microcavity exciton-polaritons in the van der Waals antiferromagnetic (AFM) semiconductor CrSBr coupled to a Tamm plasmon microcavity. Using angle-resolved spectroscopy, we reveal an exceptionally high exciton-photon coupling strength, up to 169 meV, demonstrating ultrastrong coupling that persists up to room temperature. By performing temperature-dependent spectroscopy, we show the magnetic nature of the exciton-polaritons in CrSBr microcavity as the magnetic order changes from AFM to paramagnetic. By applying an out-of-plane magnetic field, we achieve effective tuning of the polariton energy while maintaining the ultrastrong exciton-photon coupling strength. We attribute this to the spin canting process that modulates the interlayer exciton interaction.
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Affiliation(s)
- Tingting Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Dingyang Zhang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shiqi Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Zhongchong Lin
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Quan Chen
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, China
- Liaoning Academy of Materials, Shenyang, 110167, China
| | - Zuxin Chen
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, China.
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China.
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, China.
- Liaoning Academy of Materials, Shenyang, 110167, China.
| | - Wenjing Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China.
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32
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Du K, Huang FT, Gamage K, Yang J, Mostovoy M, Cheong SW. Strain-Control of Cycloidal Spin Order in a Metallic Van der Waals Magnet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303750. [PMID: 37358066 DOI: 10.1002/adma.202303750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 06/06/2023] [Indexed: 06/27/2023]
Abstract
The manipulation of magnetism through strain control is a captivating area of research with potential applications for low-power devices that do not require dissipative currents. Recent investigations of insulating multiferroics have unveiled tunable relationships among polar lattice distortions, Dzyaloshinskii-Moriya interactions (DMI), and cycloidal spin orders that break inversion symmetry. These findings have raised the possibility of utilizing strain or strain gradient to manipulate intricate magnetic states by changing polarization. However, the effectiveness of manipulating cycloidal spin orders in "metallic" materials with screened magnetism-relevant electric polarization remains uncertain. In this study, the reversible strain control of cycloidal spin textures in a metallic van der Waals magnet, Cr1/3 TaS2 , through the modulation of polarization and DMI induced by strain is demonstrated. With thermally-induced biaxial strains and isothermally-applied uniaxial strains, systematic manipulation of the sign and wavelength of the cycloidal spin textures is realized, respectively. Additionally, unprecedented reflectivity reduction under strain and domain modification at a record-low current density are also discovered. These findings establish a connection between polarization and cycloidal spins in metallic materials and present a new avenue for utilizing the remarkable tunability of cycloidal magnetic textures and optical functionality in van der Waals metals with strain.
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Affiliation(s)
- Kai Du
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA
| | - Fei-Ting Huang
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA
| | - Kasun Gamage
- Department of Physics, New Jersey Institute of Technology, Newark, New Jersey, 07102, USA
| | - Junjie Yang
- Department of Physics, New Jersey Institute of Technology, Newark, New Jersey, 07102, USA
| | - Maxim Mostovoy
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Sang-Wook Cheong
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA
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33
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Ren H, Xiang G. Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2378. [PMID: 37630963 PMCID: PMC10459406 DOI: 10.3390/nano13162378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2023] [Revised: 08/09/2023] [Accepted: 08/17/2023] [Indexed: 08/27/2023]
Abstract
Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (TC) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Wangjiang Road No. 29, Chengdu 610064, China
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34
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Wang B, Wu Y, Bai Y, Shi P, Zhang G, Zhang Y, Liu C. Origin and regulation of triaxial magnetic anisotropy in the ferromagnetic semiconductor CrSBr monolayer. NANOSCALE 2023; 15:13402-13410. [PMID: 37540039 DOI: 10.1039/d3nr02518g] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/05/2023]
Abstract
Magnetic anisotropy plays a vital role in stabilizing the long-range magnetic order of two-dimensional ferromagnetic systems. In this work, using the first-principles method, we systematically explored the triaxial magnetic anisotropic properties of a ferromagnetic semiconductor CrSBr monolayer, which is recently exfoliated from its bulk. Further analysis shows that the triaxial magnetic anisotropic properties originate from the coexistence of the magnetic dipole-dipole interaction (shape anisotropy) and the spin-orbit coupling interaction (magnetocrystalline anisotropy). Interestingly, the shape anisotropy, which has been neglected in most previous works, dominates over the magnetocrystalline anisotropy. Besides, the experimental Curie temperature of the CrSBr monolayer is well reproduced using Monte Carlo simulations. What is more, the easy magnetic axes and ferromagnetism in the CrSBr monolayer can be manipulated by strains and are relatively more susceptible to the uniaxial strain in the x direction. Our study not only explains the mechanism of triaxial magnetic anisotropy of the CrSBr monolayer, but also sheds light on how to tune the magnetic anisotropy and Curie temperature in ferromagnetic monolayers.
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Affiliation(s)
- Bing Wang
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Yaxuan Wu
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Yihang Bai
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Puyuan Shi
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Guangbiao Zhang
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Yungeng Zhang
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Chang Liu
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
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35
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Marques-Moros F, Boix-Constant C, Mañas-Valero S, Canet-Ferrer J, Coronado E. Interplay between Optical Emission and Magnetism in the van der Waals Magnetic Semiconductor CrSBr in the Two-Dimensional Limit. ACS NANO 2023; 17:13224-13231. [PMID: 37442121 PMCID: PMC10863932 DOI: 10.1021/acsnano.3c00375] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Accepted: 07/06/2023] [Indexed: 07/15/2023]
Abstract
The van der Waals semiconductor metamagnet CrSBr offers an ideal platform for studying the interplay between optical and magnetic properties in the two-dimensional limit. Here, we carried out an exhaustive optical characterization of this material by means of temperature- and magnetic-field-dependent photoluminescence (PL) on flakes of different thicknesses down to the monolayer. We found a characteristic emission peak that is quenched upon switching the ferromagnetic layers from an antiparallel to a parallel configuration and exhibits a temperature dependence different from that of the peaks commonly ascribed to excitons. The contribution of this peak to the PL is boosted around 30-40 K, coinciding with the hidden order magnetic transition temperature. Our findings reveal the connection between the optical and magnetic properties via the ionization of magnetic donor vacancies. This behavior enables a useful tool for the optical reading of the magnetic states in atomically thin layers of CrSBr and shows the potential of the design of 2D heterostructures with magnetic and excitonic properties.
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Affiliation(s)
| | - Carla Boix-Constant
- Instituto de Ciencia Molecular
(ICMol), Universitat de València, 46980, Paterna, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular
(ICMol), Universitat de València, 46980, Paterna, Spain
| | - Josep Canet-Ferrer
- Instituto de Ciencia Molecular
(ICMol), Universitat de València, 46980, Paterna, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular
(ICMol), Universitat de València, 46980, Paterna, Spain
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36
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Lin YC, Torsi R, Younas R, Hinkle CL, Rigosi AF, Hill HM, Zhang K, Huang S, Shuck CE, Chen C, Lin YH, Maldonado-Lopez D, Mendoza-Cortes JL, Ferrier J, Kar S, Nayir N, Rajabpour S, van Duin ACT, Liu X, Jariwala D, Jiang J, Shi J, Mortelmans W, Jaramillo R, Lopes JMJ, Engel-Herbert R, Trofe A, Ignatova T, Lee SH, Mao Z, Damian L, Wang Y, Steves MA, Knappenberger KL, Wang Z, Law S, Bepete G, Zhou D, Lin JX, Scheurer MS, Li J, Wang P, Yu G, Wu S, Akinwande D, Redwing JM, Terrones M, Robinson JA. Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications. ACS NANO 2023; 17:9694-9747. [PMID: 37219929 PMCID: PMC10324635 DOI: 10.1021/acsnano.2c12759] [Citation(s) in RCA: 16] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of emergent 2D systems. Here, we review recent advances in the theory, synthesis, characterization, device, and quantum physics of 2D materials and their heterostructures. First, we shed insight into modeling of defects and intercalants, focusing on their formation pathways and strategic functionalities. We also review machine learning for synthesis and sensing applications of 2D materials. In addition, we highlight important development in the synthesis, processing, and characterization of various 2D materials (e.g., MXnenes, magnetic compounds, epitaxial layers, low-symmetry crystals, etc.) and discuss oxidation and strain gradient engineering in 2D materials. Next, we discuss the optical and phonon properties of 2D materials controlled by material inhomogeneity and give examples of multidimensional imaging and biosensing equipped with machine learning analysis based on 2D platforms. We then provide updates on mix-dimensional heterostructures using 2D building blocks for next-generation logic/memory devices and the quantum anomalous Hall devices of high-quality magnetic topological insulators, followed by advances in small twist-angle homojunctions and their exciting quantum transport. Finally, we provide the perspectives and future work on several topics mentioned in this review.
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Affiliation(s)
- Yu-Chuan Lin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Riccardo Torsi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Rehan Younas
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Christopher L Hinkle
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Albert F Rigosi
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Heather M Hill
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Kunyan Zhang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Shengxi Huang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Christopher E Shuck
- A.J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States
| | - Chen Chen
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Hsiu Lin
- Department of Chemical Engineering & Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - Daniel Maldonado-Lopez
- Department of Chemical Engineering & Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - Jose L Mendoza-Cortes
- Department of Chemical Engineering & Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - John Ferrier
- Department of Physics and Chemical Engineering, Northeastern University, Boston, Massachusetts 02115, United States
| | - Swastik Kar
- Department of Physics and Chemical Engineering, Northeastern University, Boston, Massachusetts 02115, United States
| | - Nadire Nayir
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Karamanoglu Mehmet University, Karaman 70100, Turkey
| | - Siavash Rajabpour
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Adri C T van Duin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Xiwen Liu
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jie Jiang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Jian Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Wouter Mortelmans
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, United States
| | - Rafael Jaramillo
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, United States
| | - Joao Marcelo J Lopes
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplaz 5-7, 10117 Berlin, Germany
| | - Roman Engel-Herbert
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplaz 5-7, 10117 Berlin, Germany
| | - Anthony Trofe
- Department of Nanoscience, Joint School of Nanoscience & Nanoengineering, University of North Carolina at Greensboro, Greensboro, North Carolina 27401, United States
| | - Tetyana Ignatova
- Department of Nanoscience, Joint School of Nanoscience & Nanoengineering, University of North Carolina at Greensboro, Greensboro, North Carolina 27401, United States
| | - Seng Huat Lee
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Zhiqiang Mao
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Leticia Damian
- Department of Physics, University of North Texas, Denton, Texas 76203, United States
| | - Yuanxi Wang
- Department of Physics, University of North Texas, Denton, Texas 76203, United States
| | - Megan A Steves
- Institute for Quantitative Biosciences, University of California Berkeley, Berkeley, California 94720, United States
| | - Kenneth L Knappenberger
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Zhengtianye Wang
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - Stephanie Law
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - George Bepete
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Da Zhou
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jiang-Xiazi Lin
- Department of Physics, Brown University, Providence, Rhode Island 02906, United States
| | - Mathias S Scheurer
- Institute for Theoretical Physics, University of Innsbruck, Innsbruck A-6020, Austria
| | - Jia Li
- Department of Physics, Brown University, Providence, Rhode Island 02906, United States
| | - Pengjie Wang
- Department of Physics, Princeton University, Princeton, New Jersey 08540, United States
| | - Guo Yu
- Department of Physics, Princeton University, Princeton, New Jersey 08540, United States
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08540, United States
| | - Sanfeng Wu
- Department of Physics, Princeton University, Princeton, New Jersey 08540, United States
| | - Deji Akinwande
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
- Microelectronics Research Center, The University of Texas, Austin, Texas 78758, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Research Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, Nagano 380-8553, Japan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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37
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Cui J, Boström EV, Ozerov M, Wu F, Jiang Q, Chu JH, Li C, Liu F, Xu X, Rubio A, Zhang Q. Chirality selective magnon-phonon hybridization and magnon-induced chiral phonons in a layered zigzag antiferromagnet. Nat Commun 2023; 14:3396. [PMID: 37296106 DOI: 10.1038/s41467-023-39123-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Accepted: 05/30/2023] [Indexed: 06/12/2023] Open
Abstract
Two-dimensional (2D) magnetic systems possess versatile magnetic order and can host tunable magnons carrying spin angular momenta. Recent advances show angular momentum can also be carried by lattice vibrations in the form of chiral phonons. However, the interplay between magnons and chiral phonons as well as the details of chiral phonon formation in a magnetic system are yet to be explored. Here, we report the observation of magnon-induced chiral phonons and chirality selective magnon-phonon hybridization in a layered zigzag antiferromagnet (AFM) FePSe3. With a combination of magneto-infrared and magneto-Raman spectroscopy, we observe chiral magnon polarons (chiMP), the new hybridized quasiparticles, at zero magnetic field. The hybridization gap reaches 0.25 meV and survives down to the quadrilayer limit. Via first principle calculations, we uncover a coherent coupling between AFM magnons and chiral phonons with parallel angular momenta, which arises from the underlying phonon and space group symmetries. This coupling lifts the chiral phonon degeneracy and gives rise to an unusual Raman circular polarization of the chiMP branches. The observation of coherent chiral spin-lattice excitations at zero magnetic field paves the way for angular momentum-based hybrid phononic and magnonic devices.
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Affiliation(s)
- Jun Cui
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 210093, Nanjing, China
| | - Emil Viñas Boström
- Max Planck Institute for the Structure and Dynamics of Matter, Luruper Chaussee 149, 22761, Hamburg, Germany
| | - Mykhaylo Ozerov
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.
| | - Fangliang Wu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 210093, Nanjing, China
| | - Qianni Jiang
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
| | - Jiun-Haw Chu
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 611731, Chengdu, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 611731, Chengdu, China
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Angel Rubio
- Max Planck Institute for the Structure and Dynamics of Matter, Luruper Chaussee 149, 22761, Hamburg, Germany.
- Center for Computational Quantum Physics, The Flatiron Institute, New York, NY, 10010, USA.
| | - Qi Zhang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 210093, Nanjing, China.
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38
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Hou Y, Ren K, Wei Y, Yang D, Cui Z, Wang K. Opening a Band Gap in Biphenylene Monolayer via Strain: A First-Principles Study. Molecules 2023; 28:molecules28104178. [PMID: 37241918 DOI: 10.3390/molecules28104178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/10/2023] [Revised: 05/16/2023] [Accepted: 05/17/2023] [Indexed: 05/28/2023] Open
Abstract
A biphenylene network is a novel 2D allotropy of carbon with periodic 4-6-8 rings, which was synthesized successfully in 2021. In recent years, although the mechanical properties and thermal transport received a lot of research attention, how to open the Dirac cone in the band structure of a biphenylene network is still a confused question. In this work, we utilized uniaxial and biaxial lattice strains to manipulate the electronic properties and phonon frequencies of biphenylene, and we found an indirect band gap under 10% biaxial strain through the first-principles calculations. This indirect band gap is caused by the competition between the band-edge state A and the Dirac cone for the conduction band minimum (CBM). Additionally, the lightest carrier's effective mass in biphenylene is 0.184 m0 for electrons along x (Γ→X) direction, while the effective mass for holes shows a remarkable anisotropy, suggesting the holes in the tensile biphenylene monolayer are confined within a one-dimensional chain along x direction. For phonon dispersion, we discovered that the Raman-active Ag3 phonon mode shows a robust single phonon mode character under both compressive and tensile strain, but its frequency is sensitive to lattice strain, suggesting the lattice strain in biphenylene can be identified by Raman spectroscopy.
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Affiliation(s)
- Yinlong Hou
- School of Automation, Xi'an University of Posts & Telecommunications, Xi'an 710121, China
| | - Kai Ren
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210042, China
| | - Yu Wei
- School of Automation, Xi'an University of Posts & Telecommunications, Xi'an 710121, China
| | - Dan Yang
- School of Automation, Xi'an University of Posts & Telecommunications, Xi'an 710121, China
| | - Zhen Cui
- School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China
| | - Ke Wang
- School of Automation, Xi'an University of Posts & Telecommunications, Xi'an 710121, China
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39
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Wei N, He L, Wu C, Lu D, Li R, Shi H, Lan H, Wen Y, He J, Long Y, Wang X, Zeng M, Fu L. Room-Temperature Magnetism in 2D MnGa 4 -H Induced by Hydrogen Insertion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210828. [PMID: 36896838 DOI: 10.1002/adma.202210828] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Revised: 03/01/2023] [Indexed: 05/19/2023]
Abstract
2D room-temperature magnetic materials are of great importance in future spintronic devices while only very few are reported. Herein, a plasma-enhanced chemical vapor deposition approach is exploited to construct the 2D room-temperature magnetic MnGa4 -H single crystal with a thickness down to 2.2 nm. The employment of H2 plasma makes hydrogen atoms can be easily inserted into the MnGa4 lattice to modulate the atomic distance and charge state, thereby ferrimagnetism can be achieved without destroying the structural configuration. The as-obtained 2D MnGa4 -H crystal is high-quality, air-stable, and thermo-stable, demonstrating robust and stable room-temperature magnetism with a high Curie temperature above 620 K. This work enriches the 2D room-temperature magnetic family and opens up the possibility for the development of spintronic devices based on 2D magnetic alloys.
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Affiliation(s)
- Nan Wei
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Liangcheng He
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Changwei Wu
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou, 516001, P. R. China
| | - Dabiao Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Ruohan Li
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Haiwen Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Haihui Lan
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Youwen Long
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Mengqi Zeng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, P. R. China
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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40
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Hou B, Zhang Y, Zhang T, Wu J, Zhang Q, Han X, Huang Z, Chen Y, Ji H, Wang T, Liu L, Si C, Gao HJ, Wang Y. Multiple Electronic Phases Coexisting under Inhomogeneous Strains in the Correlated Insulator. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2300789. [PMID: 37097711 DOI: 10.1002/advs.202300789] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2023] [Revised: 04/05/2023] [Indexed: 06/19/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDs) can host exotic phenomena such as correlated insulating and charge-density-wave (CDW) phases. Such properties are strongly dependent on the precise atomic arrangements. Strain, as an effective tuning parameter in atomic arrangements, has been widely used for tailoring material's structures and related properties, yet to date, a convincing demonstration of strain-induced dedicate phase transition at nanometer scale in monolayer TMDs has been lacking. Here, a strain engineering technique is developed to controllably introduce out-of-plane atomic deformations in monolayer CDW material 1T-NbSe2 . The scanning tunneling microscopy and spectroscopy (STM and STS) measurements, accompanied by first-principles calculations, demonstrate that the CDW phase of 1T-NbSe2 can survive under both tensile and compressive strains even up to 5%. Moreover, significant strain-induced phase transitions are observed, i.e., tensile (compressive) strains can drive 1T-NbSe2 from an intrinsic-correlated insulator into a band insulator (metal). Furthermore, experimental evidence of the multiple electronic phase coexistence at the nanoscale is provided. The results shed new lights on the strain engineering of correlated insulator and useful for design and development of strain-related nanodevices.
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Affiliation(s)
- Baofei Hou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, China
| | - Teng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Jizheng Wu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, 100191, China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Han
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Hongyan Ji
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Tingting Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Chen Si
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, 100191, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
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41
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Qi Y, Sadi MA, Hu D, Zheng M, Wu Z, Jiang Y, Chen YP. Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205714. [PMID: 35950446 DOI: 10.1002/adma.202205714] [Citation(s) in RCA: 24] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.
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Affiliation(s)
- Yaping Qi
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Mohammad A Sadi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Dan Hu
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Ming Zheng
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou, 221116, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, P. R. China
| | - Yong P Chen
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Department of Physics and Astronomy and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, 47907, USA
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus-C, 8000, Denmark
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42
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Han X, You JY, Wu S, Li R, Feng YP, Loh KP, Zhao X. Atomically Unveiling an Atlas of Polytypes in Transition-Metal Trihalides. J Am Chem Soc 2023; 145:3624-3635. [PMID: 36735914 DOI: 10.1021/jacs.2c12801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
Transition-metal trihalides MX3 (M = Cr, Ru; X = Cl, Br, and I) belong to a family of novel two-dimensional (2D) magnets that can exhibit topological magnons and electromagnetic properties, thus affording great promises in next-generation spintronic devices. Rich magnetic ground states observed in the MX3 family are believed to be strongly correlated to the signature Kagome lattice and interlayer van der Waals coupling raised from distinct stacking orders. However, the intrinsic air instability of MX3 makes their direct atomic-scale analysis challenging. Therefore, information on the stacking-registry-dependent magnetism for MX3 remains elusive, which greatly hinders the engineering of desired phases. Here, we report a nondestructive transfer method and successfully realize an intact transfer of bilayer MX3, as evidenced by scanning transmission electron microscopy (STEM). After surveying hundreds of MX3 thin flakes, we provide a full spectrum of stacking orders in MX3 with atomic precision and calculated their associated magnetic ground states, unveiled by combined STEM and density functional theory (DFT). In addition to well-documented phases, we discover a new monoclinic C2/c phase in the antiferromagnetic (AFM) structure widely existing in MX3. Rich stacking polytypes, including C2/c, C2/m, R3̅, P3112, etc., provide rich and distinct magnetic ground states in MX3. Besides, a high density of strain soliton boundaries is consistently found in all MX3, combined with likely inverted structures, allowing AFM to ferromagnetic (FM) transitions in most MX3. Therefore, our study sheds light on the structural basis of diverse magnetic orders in MX3, paving the way for modulating magnetic couplings via stacking engineering.
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Affiliation(s)
- Xiaocang Han
- School of Materials Science and Engineering, Peking University, Beijing100871, China
| | - Jing-Yang You
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551Singapore
| | - Shengqiang Wu
- School of Materials Science and Engineering, Peking University, Beijing100871, China
| | - Runlai Li
- College of Polymer Science & Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu610065, China
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551Singapore
| | - Kian Ping Loh
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong SAR, 999077, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing100871, China
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43
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Wang X, Shang Z, Zhang C, Kang J, Liu T, Wang X, Chen S, Liu H, Tang W, Zeng YJ, Guo J, Cheng Z, Liu L, Pan D, Tong S, Wu B, Xie Y, Wang G, Deng J, Zhai T, Deng HX, Hong J, Zhao J. Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP 2S 6. Nat Commun 2023; 14:840. [PMID: 36792610 PMCID: PMC9931707 DOI: 10.1038/s41467-023-36512-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 02/06/2023] [Indexed: 02/17/2023] Open
Abstract
Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric and ferromagnetic orders. The effective manipulation of their intrinsic anisotropy makes it promising to control multiple degrees of the storage "medium". Here, we have discovered intriguing in-plane electrical and magnetic anisotropies in van der Waals (vdW) multiferroic CuCrP2S6. The uniaxial anisotropies of current rectifications, magnetic properties and magnon modes are demonstrated and manipulated by electric direction/polarity, temperature variation and magnetic field. More important, we have discovered the spin-flop transition corresponding to specific resonance modes, and determined the anisotropy parameters by consistent model fittings and theoretical calculations. Our work provides in-depth investigation and quantitative analysis of electrical and magnetic anisotropies with the same easy axis in vdW multiferroics, which will stimulate potential device applications of artificial bionic synapses, multi-terminal spintronic chips and magnetoelectric devices.
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Affiliation(s)
- Xiaolei Wang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, China.
| | - Zixuan Shang
- grid.28703.3e0000 0000 9040 3743Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124 China
| | - Chen Zhang
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Jiaqian Kang
- grid.43555.320000 0000 8841 6246School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081 China
| | - Tao Liu
- grid.54549.390000 0004 0369 4060National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, 610054 China
| | - Xueyun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China.
| | - Siliang Chen
- grid.19373.3f0000 0001 0193 3564Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055 China
| | - Haoliang Liu
- Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
| | - Wei Tang
- grid.263488.30000 0001 0472 9649Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 China
| | - Yu-Jia Zeng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Jianfeng Guo
- grid.24539.390000 0004 0368 8103Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, 100872 China
| | - Zhihai Cheng
- grid.24539.390000 0004 0368 8103Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, 100872 China
| | - Lei Liu
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Dong Pan
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Shucheng Tong
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Bo Wu
- grid.28703.3e0000 0000 9040 3743Key Laboratory of Optoelectronics Technology Ministry of Education, Beijing University of Technology, Beijing, 100124 China
| | - Yiyang Xie
- grid.28703.3e0000 0000 9040 3743Key Laboratory of Optoelectronics Technology Ministry of Education, Beijing University of Technology, Beijing, 100124 China
| | - Guangcheng Wang
- grid.28703.3e0000 0000 9040 3743Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124 China
| | - Jinxiang Deng
- grid.28703.3e0000 0000 9040 3743Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124 China
| | - Tianrui Zhai
- grid.28703.3e0000 0000 9040 3743Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124 China
| | - Hui-Xiong Deng
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Jiawang Hong
- grid.43555.320000 0000 8841 6246School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081 China
| | - Jianhua Zhao
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
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44
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Kjær ETS, Anker AS, Weng MN, Billinge SJL, Selvan R, Jensen KMØ. DeepStruc: towards structure solution from pair distribution function data using deep generative models. DIGITAL DISCOVERY 2023; 2:69-80. [PMID: 36798882 PMCID: PMC9923795 DOI: 10.1039/d2dd00086e] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Accepted: 11/28/2022] [Indexed: 11/29/2022]
Abstract
Structure solution of nanostructured materials that have limited long-range order remains a bottleneck in materials development. We present a deep learning algorithm, DeepStruc, that can solve a simple monometallic nanoparticle structure directly from a Pair Distribution Function (PDF) obtained from total scattering data by using a conditional variational autoencoder. We first apply DeepStruc to PDFs from seven different structure types of monometallic nanoparticles, and show that structures can be solved from both simulated and experimental PDFs, including PDFs from nanoparticles that are not present in the training distribution. We also apply DeepStruc to a system of hcp, fcc and stacking faulted nanoparticles, where DeepStruc recognizes stacking faulted nanoparticles as an interpolation between hcp and fcc nanoparticles and is able to solve stacking faulted structures from PDFs. Our findings suggests that DeepStruc is a step towards a general approach for structure solution of nanomaterials.
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Affiliation(s)
- Emil T S Kjær
- Department of Chemistry and Nano-Science Center, University of Copenhagen 2100 Copenhagen Ø Denmark
| | - Andy S Anker
- Department of Chemistry and Nano-Science Center, University of Copenhagen 2100 Copenhagen Ø Denmark
| | - Marcus N Weng
- Department of Chemistry and Nano-Science Center, University of Copenhagen 2100 Copenhagen Ø Denmark
| | - Simon J L Billinge
- Department of Applied Physics and Applied Mathematics Science, Columbia University New York NY 10027 USA
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory Upton NY 11973 USA
| | - Raghavendra Selvan
- Department of Computer Science, University of Copenhagen 2100 Copenhagen Ø Denmark
- Department of Neuroscience, University of Copenhagen 2200 Copenhagen N Denmark
| | - Kirsten M Ø Jensen
- Department of Chemistry and Nano-Science Center, University of Copenhagen 2100 Copenhagen Ø Denmark
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45
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Liu B, Cheng HM. 2D Ferroelectricity in hetero-phase junction. NATURE NANOTECHNOLOGY 2023; 18:5-6. [PMID: 36509922 DOI: 10.1038/s41565-022-01263-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Affiliation(s)
- Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China.
| | - Hui-Ming Cheng
- Institute of Technology for Carbon Neutrality/Faculty of Materials Science and Engineering, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China.
- Institute of Metal Research, Chinese Academy of Sciences, Shenyan, China.
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46
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Diederich GM, Cenker J, Ren Y, Fonseca J, Chica DG, Bae YJ, Zhu X, Roy X, Cao T, Xiao D, Xu X. Tunable interaction between excitons and hybridized magnons in a layered semiconductor. NATURE NANOTECHNOLOGY 2023; 18:23-28. [PMID: 36577852 DOI: 10.1038/s41565-022-01259-1] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2022] [Accepted: 10/10/2022] [Indexed: 06/17/2023]
Abstract
The interaction between distinct excitations in solids is of both fundamental interest and technological importance. One such interaction is the coupling between an exciton, a Coulomb bound electron-hole pair, and a magnon, a collective spin excitation. The recent emergence of van der Waals magnetic semiconductors1 provides a platform to explore these exciton-magnon interactions and their fundamental properties, such as strong correlation2, as well as their photospintronic and quantum transduction3 applications. Here we demonstrate the precise control of coherent exciton-magnon interactions in the layered magnetic semiconductor CrSBr. We varied the direction of an applied magnetic field relative to the crystal axes, and thus the rotational symmetry of the magnetic system4. Thereby, we tuned not only the exciton coupling to the bright magnon, but also to an optically dark mode via magnon-magnon hybridization. We further modulated the exciton-magnon coupling and the associated magnon dispersion curves through the application of uniaxial strain. At a critical strain, a dispersionless dark magnon band emerged. Our results demonstrate an unprecedented level of control of the opto-mechanical-magnonic coupling, and a step towards the predictable and controllable implementation of hybrid quantum magnonics5-11.
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Affiliation(s)
- Geoffrey M Diederich
- Intelligence Community Postdoctoral Research Fellowship Program, University of Washington, Seattle, WA, USA
- Department of Physics, University of Washington, Seattle, WA, USA
| | - John Cenker
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Yafei Ren
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Jordan Fonseca
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Daniel G Chica
- Department of Chemistry, Columbia University, New York, NY, USA
| | - Youn Jue Bae
- Department of Chemistry, Columbia University, New York, NY, USA
| | - Xiaoyang Zhu
- Department of Chemistry, Columbia University, New York, NY, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, USA
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Di Xiao
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
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47
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Zhang P, Chung TF, Li Q, Wang S, Wang Q, Huey WLB, Yang S, Goldberger JE, Yao J, Zhang X. All-optical switching of magnetization in atomically thin CrI 3. NATURE MATERIALS 2022; 21:1373-1378. [PMID: 36109674 DOI: 10.1038/s41563-022-01354-7] [Citation(s) in RCA: 22] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2022] [Accepted: 08/04/2022] [Indexed: 06/15/2023]
Abstract
Control of magnetism has attracted interest in achieving low-power and high-speed applications such as magnetic data storage and spintronic devices. Two-dimensional magnets allow for control of magnetic properties using the electric field, electrostatic doping and strain. In two-dimensional atomically thin magnets, a non-volatile all-optical method would offer the distinct advantage of switching magnetic states without application of an external field. Here, we demonstrate such all-optical magnetization switching in the atomically thin ferromagnetic semiconductor, CrI3, triggered by circularly polarized light pulses. The magnetization switching behaviour strongly depends on the exciting photon energy and polarization, in correspondence with excitonic transitions in CrI3, indicating that the switching process is related to spin angular momentum transfer from photoexcited carriers to local magnetic moments. Such an all-optical magnetization switching should allow for further exploration of magneto-optical interactions and open up applications in high-speed and low-power spintronic devices.
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Affiliation(s)
- Peiyao Zhang
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA
| | - Ting-Fung Chung
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA
| | - Quanwei Li
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA
| | - Siqi Wang
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA
| | - Qingjun Wang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Warren L B Huey
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, USA
| | - Sui Yang
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA
| | - Joshua E Goldberger
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, USA
| | - Jie Yao
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Xiang Zhang
- Nano-scale Science and Engineering Center (NSEC), University of California, Berkeley, CA, USA.
- Faculty of Science and Faculty of Engineering, The University of Hong Kong, Hong Kong, China.
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48
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Huff M. Review Paper: Residual Stresses in Deposited Thin-Film Material Layers for Micro- and Nano-Systems Manufacturing. MICROMACHINES 2022; 13:mi13122084. [PMID: 36557383 PMCID: PMC9783026 DOI: 10.3390/mi13122084] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2022] [Revised: 11/11/2022] [Accepted: 11/15/2022] [Indexed: 05/27/2023]
Abstract
This review paper covers a topic of significant importance in micro- and nano-systems development and manufacturing, specifically the residual stresses in deposited thin-film material layers and methods to control or mitigate their impact on device behavior. A residual stress is defined as the presence of a state of stress in a thin-film material layer without any externally applied forces wherein the residual stress can be compressive or tensile. While many material properties of deposited thin-film layers are dependent on the specific processing conditions, the residual stress often exhibits the most variability. It is not uncommon for residual stresses in deposited thin-film layers to vary over extremely large ranges of values (100% percent or more) and even exhibit changes in the sign of the stress state. Residual stresses in deposited layers are known to be highly dependent on a number of factors including: processing conditions used during the deposition; type of material system (thin-films and substrate materials); and other processing steps performed after the thin-film layer has been deposited, particularly those involving exposure to elevated temperatures. The origins of residual stress can involve a number of complex and interrelated factors. As a consequence, there is still no generally applicable theory to predict residual stresses in thin-films. Hence, device designers usually do not have sufficient information about the residual stresses values when they perform the device design. Obviously, this is a far less than ideal situation. The impact of this is micro- and nano-systems device development takes longer, is considerably more expensive, and presents higher risk levels. The outline of this paper is as follows: a discussion of the origins of residual stresses in deposited thin-film layers is given, followed by an example demonstrating the impact on device behavior. This is followed by a review of thin-film deposition methods outlining the process parameters known to affect the resultant residual stress in the deposited layers. Then, a review of the reported methods used to measure residual stresses in thin-films are described. A review of some of the literature to illustrate the level of variations in residual stresses depending on processing conditions is then provided. Methods which can be used to control the stresses and mitigate the impact of residual stresses in micro- and nano-systems device design and fabrication are then covered, followed by some recent development of interest.
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Affiliation(s)
- Michael Huff
- Founder and Director of the MEMS and Nanotechnology Exchange, Corporation for National Research Initiatives, Reston, VA 20191, USA
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49
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Esteras D, Rybakov A, Ruiz AM, Baldoví JJ. Magnon Straintronics in the 2D van der Waals Ferromagnet CrSBr from First-Principles. NANO LETTERS 2022; 22:8771-8778. [PMID: 36162813 PMCID: PMC9650781 DOI: 10.1021/acs.nanolett.2c02863] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Revised: 09/12/2022] [Indexed: 06/16/2023]
Abstract
The recent isolation of two-dimensional (2D) magnets offers tantalizing opportunities for spintronics and magnonics at the limit of miniaturization. One of the key advantages of atomically thin materials is their outstanding deformation capacity, which provides an exciting avenue to control their properties by strain engineering. Herein, we investigate the magnetic properties, magnon dispersion, and spin dynamics of the air-stable 2D magnetic semiconductor CrSBr (TC = 146 K) under mechanical strain using first-principles calculations. Our results provide a deep microscopic analysis of the competing interactions that stabilize the long-range ferromagnetic order in the monolayer. We showcase that the magnon dynamics of CrSBr can be modified selectively along the two main crystallographic directions as a function of applied strain, probing the potential of this quasi-1D electronic system for magnon straintronics applications. Moreover, we predict a strain-driven enhancement of TC by ∼30%, allowing the propagation of spin waves at higher temperatures.
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50
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Zhou F, Hwangbo K, Zhang Q, Wang C, Shen L, Zhang J, Jiang Q, Zong A, Su Y, Zajac M, Ahn Y, Walko DA, Schaller RD, Chu JH, Gedik N, Xu X, Xiao D, Wen H. Dynamical criticality of spin-shear coupling in van der Waals antiferromagnets. Nat Commun 2022; 13:6598. [PMID: 36329063 PMCID: PMC9633802 DOI: 10.1038/s41467-022-34376-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2022] [Accepted: 10/21/2022] [Indexed: 11/06/2022] Open
Abstract
The interplay between a multitude of electronic, spin, and lattice degrees of freedom underlies the complex phase diagrams of quantum materials. Layer stacking in van der Waals (vdW) heterostructures is responsible for exotic electronic and magnetic properties, which inspires stacking control of two-dimensional magnetism. Beyond the interplay between stacking order and interlayer magnetism, we discover a spin-shear coupling mechanism in which a subtle shear of the atomic layers can have a profound effect on the intralayer magnetic order in a family of vdW antiferromagnets. Using time-resolved X-ray diffraction and optical linear dichroism measurements, interlayer shear is identified as the primary structural degree of freedom that couples with magnetic order. The recovery times of both shear and magnetic order upon optical excitation diverge at the magnetic ordering temperature with the same critical exponent. The time-dependent Ginzburg-Landau theory shows that this concurrent critical slowing down arises from a linear coupling of the interlayer shear to the magnetic order, which is dictated by the broken mirror symmetry intrinsic to the monoclinic stacking. Our results highlight the importance of interlayer shear in ultrafast control of magnetic order via spin-mechanical coupling. Van der Waals materials are characterized by two dimensional layers weakly held together by interlayer van der Waals forces. Here, the authors study how shear motions between these layers influence the magnetic properties of the van der Waals antiferromagnets FePS3, MnPS3, and NiPS3. ‘
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Affiliation(s)
- Faran Zhou
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Kyle Hwangbo
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Qi Zhang
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, USA.,Department of Physics, University of Washington, Seattle, WA, USA.,Department of Physics, Nanjing University, Nanjing, China
| | - Chong Wang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Lingnan Shen
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Jiawei Zhang
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Qianni Jiang
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Alfred Zong
- Department of Chemistry, University of California Berkeley, Berkeley, CA, USA
| | - Yifan Su
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Marc Zajac
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Youngjun Ahn
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, USA.,Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - Donald A Walko
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Richard D Schaller
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, USA
| | - Jiun-Haw Chu
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Nuh Gedik
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA.,Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Di Xiao
- Department of Physics, University of Washington, Seattle, WA, USA.,Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Haidan Wen
- X-ray Science Division, Argonne National Laboratory, Lemont, IL, USA. .,Materials Science Division, Argonne National Laboratory, Lemont, IL, USA.
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