Advanced oxidation scanning probe lithography

Direct etching of nano/microscale patterns with both few-layer graphene and high-depth graphite structures by the raster STM electric lithography in the ambient conditions

The development of raster STM electric lithography has enabled the etching of nano/microscale patterns on both few-layer graphene (FLG) and high-depth graphite structures on the bulk HOPG substrates under ambient conditions. This approach utilises a nanoscale probe tip as a machining tool to directly fabricate conductive sample surfaces without the need for resists or masks. Compared to conventional nano/micro machining methods, the capability of ultraaccurate fabrication of nanoscale patterns using this technique is unmatched. The resulting FLG structures exhibit ultrasmooth flat bottoms and uniformly controlled depths ranging from 0.34 to 3.0 nm (less than 10 layers). This work represents a significant advancement as it demonstrates the perfect etching of FLG structures in designated nano/microscale regions using raster STM electric lithography in the constant current mode, which reaches the limitation of top-down manufacturing techniques. Additionally, raster STM electric lithography in the constant height mode can directly etch high-depth structures (up to ∼100 nm). The geometric shape and number of layers of the etched graphene structures determined by either local anodic oxidation (LAO) or the electric discharge (ED) mechanism. The LAO mechanism results in less debris and smoother edges compared to the ED mechanism, which is caused by the random electrical discharge between the tip and the sample. The well-controlled raster STM electric lithography technique is believed to be a promising and facile approach for constructing nano/microscale graphene-based devices.

SiC Doping Impact during Conducting AFM under Ambient Atmosphere

The characterization of silicon carbide (SiC) by specific electrical atomic force microscopy (AFM) modes is highly appreciated for revealing its structure and properties at a nanoscale. However, during the conductive AFM (C-AFM) measurements, the strong electric field that builds up around and below the AFM conductive tip in ambient atmosphere may lead to a direct anodic oxidation of the SiC surface due to the formation of a water nanomeniscus. In this paper, the underlying effects of the anodization are experimentally investigated for SiC multilayers with different doping levels by studying gradual SiC epitaxial-doped layers with nitrogen (N) from 5 × 1017 to 1019 at/cm3. The presence of the water nanomeniscus is probed by the AFM and analyzed with the force-distance curve when a negative bias is applied to the AFM tip. From the water meniscus breakup distance measured without and with polarization, the water meniscus volume is increased by a factor of three under polarization. AFM experimental results are supported by electrostatic modeling to study oxide growth. By taking into account the presence of the water nanomeniscus, the surface oxide layer and the SiC doping level, a 2D-axisymmetric finite element model is developed to calculate the electric field distribution nearby the tip contact and the current distributions at the nanocontact. The results demonstrate that the anodization occurred for the conductive regime in which the current depends strongly to the doping; its threshold value is 7 × 1018 at/cm3 for anodization. Finally, the characterization of a classical planar SiC-MOSFET by C-AFM is examined. Results reveal the local oxidation mechanism of the SiC material at the surface of the MOSFET structure. AFM topographies after successive C-AFM measurements show that the local oxide created by anodization is located on both sides of the MOS channel; these areas are the locations of the highly n-type-doped zones. A selective wet chemical etching confirms that the oxide induced by local anodic oxidation is a SiOCH layer.

Resistless EUV lithography: Photon-induced oxide patterning on silicon

In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially hydrogen-terminated silicon surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the hydrogen desorption in scanning tunneling microscopy-based lithography. We achieve silicon dioxide/silicon gratings with 75-nanometer half-pitch and 31-nanometer height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nanometer-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials.

Investigation of the Effects of Pulse-Atomic Force Nanolithography Parameters on 2.5D Nanostructures' Morphology

In recent years, Atomic Force Microscope (AFM)-based nanolithography techniques have emerged as a very powerful approach for the machining of countless types of nanostructures. However, the conventional AFM-based nanolithography methods suffer from low efficiency, low rate of patterning, and high complexity of execution. In this frame, we first developed an easy and effective nanopatterning technique, termed Pulse-Atomic Force Lithography (P-AFL), with which we were able to pattern 2.5D nanogrooves on a thin polymer layer. Indeed, for the first time, we patterned nanogrooves with either constant or varying depth profiles, with sub-nanometre resolution, high accuracy, and reproducibility. In this paper, we present the results on the investigation of the effects of P-AFL parameters on 2.5D nanostructures' morphology. We considered three main P-AFL parameters, i.e., the pulse's amplitude (setpoint), the pulses' width, and the distance between the following indentations (step), and we patterned arrays of grooves after a precise and well-established variation of the aforementioned parameters. Optimizing the nanolithography process, in terms of patterning time and nanostructures quality, we realized unconventional shape nanostructures with high accuracy and fidelity. Finally, a scanning electron microscope was used to confirm that P-AFL does not induce any damage on AFM tips used to pattern the nanostructures.

Variations in the Effective Work Function of Graphene in a Sliding Electrical Contact Interface under Ambient Conditions

Control of work function (WF) in graphene is crucial for graphene application in electrode material replacement and electrode surface protection in optoelectronic devices. Although efforts have been made to manipulate the effective WF of graphene to optimize its application, most studies have focused on graphene employed in static electrical contact interfaces. In this work, we investigated WF variations of supported single-layer graphene (SLG) in sliding electrical contact under ambient conditions, which was achieved by sliding an electrically biased conductive atomic force microscopy (cAFM) probe on the SLG surface. The effective WF, structural properties, and chemical compositions of rubbed SLG were subsequently measured by Kelvin probe force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, respectively. We found that the effective WF of the rubbed SLG was governed by both the tunneling triboelectric effect (TTE) and tribochemical-induced surface functionalization. The TTE charges generated by the sliding cAFM probe tunneled through the structural defects of the SLG and were trapped underneath the SLG. The SLG will be either p-doped or n-doped depending on the type of TTE charges and the polarity of electric bias applied to the cAFM probe during the rubbing process. However, the applied electric bias also led to the electrolysis of a water meniscus formed at the cAFM probe-SLG contact, resulting in surface oxidation and the increase of SLG WF. Further absorption of ambient water molecules on the oxygenated functional groups gradually reduced the SLG WF. The influence of TTE and surface functionalization on the SLG WF depends on the magnitude and polarity of applied electric biases, relative humidity, and physical properties of the supporting substrates. Our results demonstrate that the effective WF of SLG in a sliding electrical contact interface will vary with time and might need to be considered for related applications.

Scanning Probe Lithography: State-of-the-Art and Future Perspectives

High-throughput and high-accuracy nanofabrication methods are required for the ever-increasing demand for nanoelectronics, high-density data storage devices, nanophotonics, quantum computing, molecular circuitry, and scaffolds in bioengineering used for cell proliferation applications. The scanning probe lithography (SPL) nanofabrication technique is a critical nanofabrication method with great potential to evolve into a disruptive atomic-scale fabrication technology to meet these demands. Through this timely review, we aspire to provide an overview of the SPL fabrication mechanism and the state-the-art research in this area, and detail the applications and characteristics of this technique, including the effects of thermal aspects and chemical aspects, and the influence of electric and magnetic fields in governing the mechanics of the functionalized tip interacting with the substrate during SPL. Alongside this, the review also sheds light on comparing various fabrication capabilities, throughput, and attainable resolution. Finally, the paper alludes to the fact that a majority of the reported literature suggests that SPL has yet to achieve its full commercial potential and is currently largely a laboratory-based nanofabrication technique used for prototyping of nanostructures and nanodevices.

Molecular Recognition by Silicon Nanowire Field-Effect Transistor and Single-Molecule Force Spectroscopy

Silicon nanowire (SiNW) field-effect transistors (FETs) have been developed as very sensitive and label-free biomolecular sensors. The detection principle operating in a SiNW biosensor is indirect. The biomolecules are detected by measuring the changes in the current through the transistor. Those changes are produced by the electrical field created by the biomolecule. Here, we have combined nanolithography, chemical functionalization, electrical measurements and molecular recognition methods to correlate the current measured by the SiNW transistor with the presence of specific molecular recognition events on the surface of the SiNW. Oxidation scanning probe lithography (o-SPL) was applied to fabricate sub-12 nm SiNW field-effect transistors. The devices were applied to detect very small concentrations of proteins (500 pM). Atomic force microscopy (AFM) single-molecule force spectroscopy (SMFS) experiments allowed the identification of the protein adsorption sites on the surface of the nanowire. We detected specific interactions between the biotin-functionalized AFM tip and individual avidin molecules adsorbed to the SiNW. The measurements confirmed that electrical current changes measured by the device were associated with the deposition of avidin molecules.

Introducing Water Electrolithography

High-resolution patterning with remarkable customizability has stimulated the invention of numerous scanning probe lithography (SPL) techniques. However, frequent tip damage, substrate-film deterioration, low throughput, and debris amassing in the patterned region are the inherent impediments that have precluded obtaining patterns with high repeatability using SPL. Hence, SPL still has not got wider acceptance for industrial fabrication and technological applications. Here, we introduce a novel SPL technique, named water electrolithography (W-ELG), for patterning at the microscale and potentially at the nanoscale also. The technique operates in the non-contact mode and is based on the selective etching, via an electrochemical process, of a metallic film (e.g., Cr) submerged into water. Here, the working of W-ELG is demonstrated by scribing a pattern into the Cr film by a traversing cathode tip along a preset locus. A numerical analysis establishing the working principles and optimization strategies of W-ELG is also presented. The tip-sample distance and tip-diameter are identified as the critical parameters controlling the pattern creation. W-ELG achieved a throughput of 1.5 × 107 μm2/h, which is the highest among the existing SPL techniques, while drawing 4 μm wide lines, and is also immune to deleterious issues of tip damage, debris amassment, etc. Therefore, the resolution of these inherent impediments of SPL in W-ELG sets the stage for a paradigm shift that may now translate the SPL from academic exploration to industrial fabrications.

In Situ Atomic-Scale Imaging of Interfacial Water under 3D Nanoscale Confinement

Capillary condensation of water from vapor is an everyday phenomenon which has a wide range of scientific and technological implications. Many aspects of capillary condensation are not well understood such as the structure of interfacial water, the existence of distinct properties of confined water, or the validity of the Kelvin equation at nanoscale. We note the absence of high-spatial resolution images inside a meniscus. Here, we develop an AFM-based method to provide in situ atomic-scale resolution maps of the solid-water interface of a nanomeniscus (80-250 nm³). The separation between the first two hydration layers on graphite is 0.30 nm, while on mica it is 0.28 nm. Those values are very close to the ones expected for the same surfaces immersed in bulk water. Thus, the hydration layer structure on a crystalline surface is independent of the water volume.

Study of local anodic oxidation regimes in MoSe2

Scanning probe microscopy is widely known not only as a well-established research method but also as a set of techniques enabling precise surface modification. One such technique is local anodic oxidation (LAO). In this study, we investigate the LAO of MoSe₂ transferred on an Au/Si substrate, focusing specifically on the dependence of the height and diameter of oxidized dots on the applied voltage and time of exposure at various humidities. Depending on the humidity, two different oxidation regimes were identified. The first, at a relative humidity (RH) of 60%-65%, leads to in-plane isotropic oxidation. For this regime, we analyze the dependence of the size of oxidized dots on the oxidation parameters and modify the classical equation of oxidation kinetics to account for the properties of MoSe₂ and its oxide. In this regime, patterns with a maximum spatial resolution of 10 nm were formed on the MoSe₂ surface. The second is the in-plane anisotropic oxidation regime that arises at a RH of 40%-50%. In this regime, oxidation leads to the formation of triangles oxidized inside the zigzag edges. Based on the mutual orientation of zigzag and armchair directions in successive oxidized layers, the stacking type and phase of MoSe₂ flakes were determined. These results allow LAO to be considered not only as an ultra-high-resolution nanolithography method, but also as a method for investigating the crystal structure of materials with strong intrinsic anisotropy, such as transition metal dichalcogenides.

Multifunctional Structured Platforms: From Patterning of Polymer-Based Films to Their Subsequent Filling with Various Nanomaterials

There is an astonishing number of optoelectronic, photonic, biological, sensing, or storage media devices, just to name a few, that rely on a variety of extraordinary periodic surface relief miniaturized patterns fabricated on polymer-covered rigid or flexible substrates. Even more extraordinary is that these surface relief patterns can be further filled, in a more or less ordered fashion, with various functional nanomaterials and thus can lead to the realization of more complex structured architectures. These architectures can serve as multifunctional platforms for the design and the development of a multitude of novel, better performing nanotechnological applications. In this work, we aim to provide an extensive overview on how multifunctional structured platforms can be fabricated by outlining not only the main polymer patterning methodologies but also by emphasizing various deposition methods that can guide different structures of functional nanomaterials into periodic surface relief patterns. Our aim is to provide the readers with a toolbox of the most suitable patterning and deposition methodologies that could be easily identified and further combined when the fabrication of novel structured platforms exhibiting interesting properties is targeted.

Direct electron-beam patterning of monolayer MoS2 with ice

Two-dimensional transition metal dichalcogenides (TMDCs) are considered strong competitors for next generation semiconductor materials. In this paper, we propose direct electron-beam patterning of monolayer MoS2 inspired by an emerging ice lithography technique. Compared to conventional resist-based nanofabrication, ice-assisted patterning is free of contaminations from polymer resist and allows in situ processing of MoS2. The effects of electron beam dose and energy are investigated and nanoribbons with width below 30 nm are attainable. This method is expected to be applicable also to other TMDCs, providing a promising alternative for nanofabrication of 2D material devices.

Chemical carving lithography with scanning catalytic probes

This study introduces a new chemical carving technique as an alternative to existing lithography and etching techniques. Chemical carving incorporates the concept of scanning probe lithography and metal-assisted chemical etching (MaCE). A catalyst-coated probe mechanically scans a Si substrate in a solution, and the Si is chemically etched into the shape of the probes, forming pre-defined 3D patterns. A metal catalyst is used to oxidize the Si, and the silicon oxide formed is etched in the solution; this local MaCE reaction takes place continuously on the Si substrate in the scanning direction of probes. Polymer resist patterning for subsequent etching is not required; instead, scanning probes pattern the oxidation mask directly and chemical etching of Si occurs concurrently. A prototype that drives the probe with an actuator was used to analyze various aspects of the etching profiles based on the scanning speeds and sizes of the probe used. This technique suggests the possibility of forming arbitrary structures because the carving trajectory is formed according to the scan direction of the probes.

Thermomechanical Nanocutting of 2D Materials

Atomically thin materials, such as graphene and transition metal dichalcogenides, are promising candidates for future applications in micro/nanodevices and systems. For most applications, functional nanostructures have to be patterned by lithography. Developing lithography techniques for 2D materials is essential for system integration and wafer-scale manufacturing. Here, a thermomechanical indentation technique is demonstrated, which allows for the direct cutting of 2D materials using a heated scanning nanotip. Arbitrarily shaped cuts with a resolution of 20 nm are obtained in monolayer 2D materials, i.e., molybdenum ditelluride (MoTe₂ ), molybdenum disulfide (MoS₂ ), and molybdenum diselenide (MoSe₂ ), by thermomechanically cleaving the chemical bonds and by rapid sublimation of the polymer layer underneath the 2D material layer. Several micro/nanoribbon structures are fabricated and electrically characterized to demonstrate the process for device fabrication. The proposed direct nanocutting technique allows for precisely tailoring nanostructures of 2D materials with foreseen applications in the fabrication of electronic and photonic nanodevices.

Morphological and Mechanical Characterization of DNA SAMs Combining Nanolithography with AFM and Optical Methods

The morphological and mechanical properties of thiolated ssDNA films self-assembled at different ionic strength on flat gold surfaces have been investigated using Atomic Force Microscopy (AFM). AFM nanoshaving experiments, performed in hard tapping mode, allowed selectively removing molecules from micro-sized regions. To image the shaved areas, in addition to the soft contact mode, we explored the use of the Quantitative Imaging (QI) mode. QI is a less perturbative imaging mode that allows obtaining quantitative information on both sample topography and mechanical properties. AFM analysis showed that DNA SAMs assembled at high ionic strength are thicker and less deformable than films prepared at low ionic strength. In the case of thicker films, the difference between film and substrate Young’s moduli could be assessed from the analysis of QI data. The AFM finding of thicker and denser films was confirmed by X-Ray Photoelectron Spectroscopy (XPS) and Spectroscopic Ellipsometry (SE) analysis. SE data allowed detecting the DNA UV absorption on dense monomolecular films. Moreover, feeding the SE analysis with the thickness data obtained by AFM, we could estimate the refractive index of dense DNA films.

Quantitative phase-mode electrostatic force microscopy on silicon oxide nanostructures

Phase-mode electrostatic force microscopy (EFM-Phase) is a viable technique to image surface electrostatic potential of silicon oxide stripes fabricated by oxidation scanning probe lithography, exhibiting an inhomogeneous distribution of localized charges trapped within the stripes during the electrochemical reaction. We show here that these nanopatterns are useful benchmark samples for assessing the spatial/voltage resolution of EFM-phase. To quantitatively extract the relevant observables, we developed and applied an analytical model of the electrostatic interactions in which the tip and the surface are modelled in a prolate spheroidal coordinates system, fitting accurately experimental data. A lateral resolution of ∼60 nm, which is comparable to the lateral resolution of EFM experiments reported in the literature, and a charge resolution of ∼20 electrons are achieved. This electrostatic analysis evidences the presence of a bimodal population of trapped charges in the nanopatterned stripes.

Micro-Pattern of Graphene Oxide Films Using Metal Bonding

Recently, graphene has been explored in several research areas according to its outstanding combination of mechanical and electrical features. The ability to fabricate micro-patterns of graphene facilitates its integration in emerging technologies such as flexible electronics. This work reports a novel micro-pattern approach of graphene oxide (GO) film on a polymer substrate using metal bonding. It is shown that adding ethanol to the GO aqueous dispersion enhances substantially the uniformity of GO thin film deposition, which is a great asset for mass production. On the other hand, the presence of ethanol in the GO solution hinders the fabrication of patterned GO films using the standard lift-off process. To overcome this, the fabrication process provided in this work takes advantage of the chemical adhesion between the GO or reduced GO (rGO) and metal films. It is proved that the adhesion between the metal layer and GO or rGO is stronger than the adhesion between the latter and the polymer substrate (i.e., cyclic olefin copolymer used in this work). This causes the removal of the GO layer underneath the metal film during the lift-off process, leaving behind the desired GO or rGO micro-patterns. The feasibility and suitability of the proposed pattern technique is confirmed by fabricating the patterned electrodes inside a microfluidic device to manipulate living cells using dielectrophoresis. This work adds great value to micro-pattern GO and rGO thin films and has immense potential to achieve high yield production in emerging applications.

AC parallel local oxidation of silicon

Here, we present a suitable advancement of parallel local oxidation nanolithography, demonstrating its feasibility in alternate current mode (AC-PLON). For demonstration, we fabricated model structures consisting of an array of parallel nanostripes of electrochemical SiO _x with a controlled roughness. Besides, we proved the repeatability of AC-PLON and its integrability with conventional parallel local oxidation nanolithography.

Submicron Size Schottky Junctions on As-Grown Monolayer Epitaxial Graphene on Ge(100): A Low-Invasive Scanned-Probe-Based Study

We report on the investigation of the Schottky barrier (SB) formed at the junction between a metal-free graphene monolayer and Ge semiconductor substrate in the as-grown epitaxial graphene/Ge(100) system. In order to preserve the heterojunction properties, we defined submicron size graphene/Ge junctions using the scanning probe microscopy lithography in the local oxidation configuration, a low-invasive processing approach capable of inducing spatially controlled electrical separations among tiny graphene regions. Characteristic junction parameters were estimated from I-V curves obtained using conductive-atomic force microscopy. The current-voltage characteristics showed a p-type Schottky contact behavior, ascribed to the n-type to p-type conversion of the entire Ge substrate due to the formation of a large density of acceptor defects during the graphene growth process. We estimated, for the first time, the energy barrier height in the as-grown graphene/Ge Schottky junction (φ_B ≈ 0.45 eV) indicating an n-type doping of the graphene layer with a Fermi level ≈ 0.15 eV above the Dirac point. The SB devices showed ideality factor values around 1.5 pointing to the high quality of the heterojunctions.

Graphite and Graphene Fairy Circles: A Bottom-Up Approach for the Formation of Nanocorrals

A convenient covalent functionalization approach and nanopatterning method of graphite and graphene is developed. In contrast to expectations, electrochemically activated dediazotization of a mixture of two aryl diazonium compounds in aqueous media leads to a spatially inhomogeneous functionalization of graphitic surfaces, creating covalently modified surfaces with quasi-uniform spaced islands of pristine graphite or graphene, coined nanocorrals. Cyclic voltammetry and chronoamperometry approaches are compared. The average diameter (45-130 nm) and surface density (20-125 corrals/μm²) of these nanocorrals are tunable. These chemically modified nanostructured graphitic (CMNG) surfaces are characterized by atomic force microscopy, scanning tunneling microscopy, Raman spectroscopy and microscopy, and X-ray photoelectron spectroscopy. Mechanisms leading to the formation of these CMNG surfaces are discussed. The potential of these surfaces to investigate supramolecular self-assembly and on-surface reactions under nanoconfinement conditions is demonstrated.

Design of Elastomer-CNT Film Photoactuators for Nanolithography

Polymer pen lithography (PPL) is an approach to multiplexing scanning probe lithography, in which an array of probes on a compliant film-coated rigid substrate are used to write patterns on a surface. Recently, it was shown that these nominally passive pen arrays can be rendered photo-active by making them out of a polydimethylsiloxane (PDMS)⁻carbon nanotube (CNT) composite. While such photoactuated pens in principle represent a rapid, maskless, and versatile nanomanufacturing strategy, a key challenge that remains is learning how to effectively control the writing of each pen, individually. In this research, we studied the design of PDMS⁻CNT thin-film photoactuators and experimentally explored the role of illumination radius, film thickness, and CNT concentration. Additionally, we have proposed a model that predicts actuation efficiency, actuation time, and the crosstalk between pens. Based upon these results, we have generated a map of working efficiency to elucidate the ideal choice for specific actuation requirements. This work lays the foundation for studying further photoactuatable composite films as actuators in applications beyond lithography including soft robotics and adaptive optics.

Electrode-Free Anodic Oxidation Nanolithography of Low-Dimensional Materials

Scanning probe lithography based on local anodic oxidation (LAO) provides a robust and general nanolithography tool for a wide range of applications. Its practical use, however, has been strongly hampered due to the requirement of a prefabricated microelectrode to conduct the driving electrical current. Here we report a novel electrode-free LAO technique, which enables in situ patterning of as-prepared low-dimensional materials and heterostructures with great flexibility and high precision. Unlike conventional LAO driven by a direct current, the electrode-free LAO is driven by a high-frequency (>10 kHz) alternating current applied through capacitive coupling, which eliminates the need of a contacting electrode and can be used even for tailoring insulating materials. Using this technique, we demonstrated flexible nanolithography of graphene, hexagonal boron nitride, and carbon nanotubes on insulating substrates with ∼10-nanometer precision. In addition, the electrode-free LAO exhibits high etching quality without oxide residues left. Such an in situ and electrode-free nanolithography with high etching quality opens up new opportunities for fabricating ultraclean nanoscale devices and heterostructures with great flexibility.

Direct Patterning of p-Type-Doped Few-layer WSe2 Nanoelectronic Devices by Oxidation Scanning Probe Lithography

Direct, robust, and high-resolution patterning methods are needed to downscale the lateral size of two-dimensional materials to observe new properties and optimize the overall processing of these materials. In this work, we report a fabrication process where the initial microchannel of a few-layer WSe₂ field-effect transistor is treated by oxygen plasma to form a self-limited oxide layer on top of the flake. This thin oxide layer has a double role here. First, it induces the so-called p-doping effect in the device. Second, it enables the fabrication of oxide nanoribbons with controlled width and depth by oxidation scanning probe lithography (o-SPL). After the removal of the oxides by deionized H₂O etching, a nanoribbon-based field-effect transistor is produced. Oxidation SPL is a direct writing technique that minimizes the use of resists and lithographic steps. We have applied this process to fabricate a 5 nm thick WSe₂ field-effect transistor, where the channel consists in an array of 5 parallel 350 nm half-pitch nanoribbons. The electrical measurements show that the device presents an improved conduction level compared to the starting thin-layer transistor and a positive threshold voltage shift associated to the p-doping treatment. The method enables to pattern devices with sub-50 nm feature sizes. We have patterned an array of 10 oxide nanowires with 36 nm half-pitch by oxidation SPL.

Nanotribological Printing: A Nanoscale Additive Manufacturing Method

Additive manufacturing methods are transforming the way components and devices are fabricated, which in turn is opening up completely new vistas for conceiving and designing products and engineered systems. Small-scale (submicrometer) additive manufacturing methods are largely in their infancy. While a number of methods exist, a particular challenge lies in finding methods that can produce a range of materials while obtaining sufficiently robust mechanical properties. In this paper, we describe a novel nanoscale additive manufacturing technique deemed "Nanotribological Printing" (NTP), which creates structures through tribomechanical and tribochemical surface interactions at the contact between a substrate and an atomic force microscope probe, where material pattern formation is driven by normal and shear contact stresses. The "ink" consists of nanoparticles or molecules dispersed in a carrier fluid surrounding the atomic force microscope (AFM) probe, which are entrained into the contact during sliding. Being stress-driven, patterning only occurs locally within regions which experience contact and sufficiently high stresses. Thus, imaging and measurement to characterize the morphology and properties of the deposited structures can be conducted in situ during the manufacturing process. Moreover, using local mechanical energy as the kinetic driver activating the solidification process, the method is compact and does not require application of a bias voltage or laser exposure and can be performed at ambient temperatures. We demonstrate (1) control of pattern dimensions with sub-100 nm lateral and sub-5 nm thickness control through variations in contact size and applied stress, (2) creation of amorphous, polycrystalline, and nanocomposite structures including sequential multimaterial deposition, and (3) formation of manufactured structures which exhibit mechanical properties approaching those of bulk counterparts. The ability to create nanoscale patterns using standard AFM cantilever probes and operation modes (contact mode scanning in fluid) with commercial AFM instruments, independent of substrate, establishes NTP as a versatile and easily accessible method for nanoscale additive manufacturing.

Charged particle single nanometre manufacturing

Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled "Single Nanometre Manufacturing: Beyond CMOS". Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C₆₀ molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

Interfacial Electron Beam Lithography: Chemical Monolayer Nanopatterning via Electron-Beam-Induced Interfacial Solid-Phase Oxidation

Chemical nanopatterning-the deliberate nanoscale modification of the chemical nature of a solid surface-is conveniently realized using organic monolayer coatings to impart well-defined chemical functionalities to selected surface regions of the coated solid. Most monolayer patterning methods, however, exploit destructive processes that introduce topographic as well as other undesired structural and chemical transformations along with the desired surface chemical modification. In particular in electron beam lithography (EBL), organic monolayers have been used mainly as ultrathin resists capable of improving the resolution of patterning via local deposition or removal of material. On the basis of the recent discovery of a class of radiation-induced interfacial chemical transformations confined to the contact surface between two solids, we have advanced a direct, nondestructive EBL approach to chemical nanopatterning-interfacial electron beam lithography (IEBL)-demonstrated here by the e-beam-induced local oxidation of the -CH₃ surface moieties of a highly ordered self-assembled n-alkylsilane monolayer to -COOH while fully preserving the monolayer structural integrity and molecular organization. In this conceptually different EBL process, the traditional resist is replaced by a thin film coating that acts as a site-activated reagent/catalyst in the chemical modification of the coated surface, here the top surface of the to-be-patterned monolayer. Structural and chemical transformations induced in the thin film coating and the underlying monolayer upon exposure to the electron beam were elucidated using a semiquantitative surface characterization methodology that combines multimode AFM imaging with postpatterning surface chemical modifications and quantitative micro-FTIR measurements. IEBL offers attractive opportunities in chemical nanopatterning, for example, by enabling the application of the advanced EBL technology to the straightforward nanoscale functionalization of the simplest commonly used organosilane monolayers.

The role of mechanical force on the kinetics and dynamics of electrochemical redox reactions on graphene

Electrochemical reactions are a critical class of processes strongly influenced by atomic scale effects, where the relationships between local chemical composition, stress, strain, and reactivity are not well understood. Here we investigate the relationship between applied stress and reaction rates for the oxygen evolution reaction on multi-layered graphene using conductive atomic force microscopy. During the reaction, oxygen groups accumulate on the surface and the oxygenation rate increases with applied load. The results also show that the rate is not uniform across the surface, where local edges and defects are more reactive than the basal plane. The results presented here are interpreted in the context of transition state theory, where applied load over the reaction coordinate linearly modifies the energy landscape. This work motivates the general efficacy of atomic force microscopy as a tool to study relationships between local mechanical surface effects and electrochemical reactivity.

Interface Characterization and Control of 2D Materials and Heterostructures

2D materials and heterostructures have attracted significant attention for a variety of nanoelectronic and optoelectronic applications. At the atomically thin limit, the material characteristics and functionalities are dominated by surface chemistry and interface coupling. Therefore, methods for comprehensively characterizing and precisely controlling surfaces and interfaces are required to realize the full technological potential of 2D materials. Here, the surface and interface properties that govern the performance of 2D materials are introduced. Then the experimental approaches that resolve surface and interface phenomena down to the atomic scale, as well as strategies that allow tuning and optimization of interfacial interactions in van der Waals heterostructures, are systematically reviewed. Finally, a future outlook that delineates the remaining challenges and opportunities for 2D material interface characterization and control is presented.

Large-Area Patterning of Metal Nanostructures by Dip-Pen Nanodisplacement Lithography for Optical Applications

Au nanostructures are remarkably important in a wide variety of fields for decades. The fabrication of Au nanostructures typically requires time-consuming and expensive electron-beam lithography (EBL) that operates in vacuum. To address this challenge, this paper reports the development of massive dip-pen nanodisplacement lithography (DNL) as a desktop fabrication tool, which allows high-throughput and rational design of arbitrary Au nanopatterns in ambient condition. Large-area (1 cm² ) and uniform (<10% variation) Au nanostructures as small as 70 nm are readily fabricated, with a throughput 100-fold higher than that of conventional EBL. As a proof-of-concept of the applications in the opitcal field, we fabricate discrete Au nanorod arrays that show significant plasmonic resonance in the visible range, and interconnected Au nanomeshes that are used for transparent conductive electrode of solar cells.

Fabrication of Nanoscale Pits with High Throughput on Polymer Thin Film Using AFM Tip-Based Dynamic Plowing Lithography

We show that an atomic force microscope (AFM) tip-based dynamic plowing lithography (DPL) approach can be used to fabricate nanoscale pits with high throughput. The method relies on scratching with a relatively large speed over a sample surface in tapping mode, which is responsible for the separation distance of adjacent pits. Scratching tests are carried out on a poly(methyl methacrylate) (PMMA) thin film using a diamond-like carbon coating tip. Results show that 100 μm/s is the critical value of the scratching speed. When the scratching speed is greater than 100 μm/s, pit structures can be generated. In contrast, nanogrooves can be formed with speeds less than the critical value. Because of the difficulty of breaking the molecular chain of glass-state polymer with an applied high-frequency load and low-energy dissipation in one interaction of the tip and the sample, one pit requires 65-80 penetrations to be achieved. Subsequently, the forming process of the pit is analyzed in detail, including three phases: elastic deformation, plastic deformation, and climbing over the pile-up. In particular, 4800-5800 pits can be obtained in 1 s using this proposed method. Both experiments and theoretical analysis are presented that fully determine the potential of this proposed method to fabricate pits efficiently.