Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

Regulating interface Schottky barriers toward a high-performance self-powered imaging photodetector

Two-dimensional (2D) layered organic-inorganic hybrid perovskites have attracted wide attention in high-performance optoelectronic applications due to their good stability and excellent optoelectronic properties. Here, a high-performance self-powered photodetector is realized based on an asymmetrical metal-semiconductor-metal (MSM) device structure (Pt-(PEA)2PbI4 SC-Ag), which introduces a strong built-in electric field by regulating interface Schottky barriers. Benefitting from excellent built-in electrical potential, the photodetector shows attractive photovoltaic properties without any power supply, including high photo-responsivity (114.07 mA W-1), fast response time (1.2 μs/582 μs) and high detectivity (4.56 × 1012 Jones). Furthermore, it exhibits high-fidelity imaging capability at zero bias voltage. In addition, the photodetectors show excellent stability by maintaining 99.4% of the initial responsivity in air after 84 days. This work enables a significant advance in perovskite SC photodetectors for developing stable and high-performance devices.

Transfer-free, scalable vertical heterostructure FET on MoS2/WS2continuous films

Taking into account the novel layered structure and unusual electronic properties of MoS₂and WS₂on the side the lack of dangling bonds between these two components and donor-acceptor linkage effects, growth of the MoS₂/WS₂vertical heterojunction film on the amorphous SiO₂/Si substrate have created high demand. In this study, we reported the continuous, scalable, and vertical MoS₂/WS₂heterostructure film by using a sputtering without a transfer step. The WS₂film was continuously grown on MoS₂and eventually led to the formation of the MoS₂/WS₂vertical heterojunction film. Dozens of FETs fabricated on MoS₂/WS₂continuous heterojunction film were created on the same substrate in a single lithographic fabrication step, allowing them to be commercialized and not only used in research applications. RAMAN spectra proved the formation of the MoS₂/WS₂heterostructure film. In XPS measurements, it was shown that a separate MoS₂and WS₂layer was grown instead of the alloy structure. The polarity behavior of the MoS₂/WS₂heterostructure FET was found to be modulated with different drain voltages as p-type to ambipolar and finally n-type conductivity because of the transition of band structure and Schottky barrier heights at different drain voltages. Electron mobility (7.2 cm²V.s^-1) and on/off ratio (10⁴-10⁵) exhibited by the MoS₂/WS₂heterostructure FETs displayed a more improved electrical performance than that of individual WS₂, MoS₂devices. It was observed that the mobility value of MoS₂/WS₂FET was approximately 514 times greater than WS₂FET and 800 times greater than MoS₂FET. Additionally, the MoS₂/WS₂FET on/off ratio was larger than 2 order MoS₂FET and 1 order WS₂FET. The film of continuous vertical heterojunctions as in the MoS₂/WS₂currents in the study would be a promising candidate for nanoelectronics fields. This work demonstrated the progress towards realizing carrier-type controlled high-performance MoS₂/WS₂heterojunction-based FETs for future logic devices.

Deterministic Light-to-Voltage Conversion with a Tunable Two-Dimensional Diode

Heterojunctions accompanied by energy barriers are of significant importance in two-dimensional materials-based electronics and optoelectronics. They provide more functional device performance, compared with their counterparts with uniform channels. Multimodal optoelectronic devices could be accomplished by elaborately designing band diagrams and architectures of the two-dimensional junctions. Here, we demonstrate deterministic light-to-voltage conversion based on strong dielectric screening effect in a tunable two-dimensional Schottky diode based on semiconductor/metal heterostructure, where the resultant photovoltage is dependent on the intensity of light input but independent of gate voltage. The converted photovoltage across the diode is independent of gate voltage under both monochromatic laser and white light illumination. In addition, the Fermi level of two-dimensional semiconductor area on dielectric SiO₂ is highly gate-dependent, leading to the tunable rectifying effect of this heterostructure, which corporates a vertical Schottky junction and a lateral homojunction. As a result, a constant open-circuit voltage of ∼0.44 V and a hybrid "photovoltaic + photoconduction" photoresponse behavior are observed under 1 μW illumination of 403 nm laser, in addition to an electrical rectification ratio up to nearly 10⁴. The scanning photocurrent mappings under different bias voltages indicate that the switchable operation mode (photovoltaic, photoconduction, or hybrid) depends on the bias-dependent effective energy barrier at the two-dimensional semiconductor-metal interface. This approach provides a facile and reliable solution for deterministic on-chip light-to-voltage conversion and optical-to-electrical interconnects.

CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm2 junction area

The device’s integration of molecular electronics is limited regarding the large-scale fabrication of gap electrodes on a molecular scale. The van der Waals integration (vdWI) of a vertically aligned molecular layer (0D) with 2D or 3D electrodes indicates the possibility of device’s integration; however, the active junction area of 0D-2D and 0D-3D vdWIs remains at a microscale size. Here, we introduce the robust fabrication of a vertical 1D-0D-1D vdWI device with the ultra-small junction area of 1 nm² achieved by cross-stacking top carbon nanotubes (CNTs) on molecularly assembled bottom CNTs. 1D-0D-1D vdWI memories are demonstrated through ferroelectric switching of azobenzene molecules owing to the cis-trans transformation combined with the permanent dipole moment of the end-tail -CF₃ group. In this work, our 1D-0D-1D vdWI memory exhibits a retention performance above 2000 s, over 300 cycles with an on/off ratio of approximately 10⁵ and record current density (3.4 × 10⁸ A/cm²), which is 100 times higher than previous study through the smallest junction area achieved in a vdWI. The simple stacking of aligned CNTs (4 × 4) allows integration of memory arrays (16 junctions) with high device operational yield (100%), offering integration guidelines for future molecular electronics.

The van der Waals integration of molecular layer (0D) with 2D or 3D electrodes is limited at microscale junction. Here, the authors introduce 1D-0D-1D vdWI memory with 1 nm² junction achieved by cross-stacking t-CNT on molecularly assembled b-CNT.

Van der Waals Heterostructure Photodetectors with Bias-Selectable Infrared Photoresponses

A bias-selectable photodetector, which can sense the wavelength of interest by tuning the polarity of applied bias, is useful for target discrimination and identification applications. So far, those detectors are generally based on the back-to-back photodiode configuration via exploiting epitaxial semiconductors as optoelectronic materials, which inevitably lead to high fabrication costs and complex device architectures. Here, we demonstrate that our band-engineered van der Waals heterostructures can be applied as bias-selectable photodetectors. Our first prototypical device is mainly composed of black phosphorus (BP) and MoTe₂ light absorbers sandwiching a thin MoS₂ hole blocking layer. By varying the bias polarity, its spectral photoresponse can be switched between near-infrared and short-wave infrared bands, and our optoelectronic characterizations indicate that the detector can exhibit high external quantum efficiency (EQE) and fast operation speed. With this framework, we further demonstrate the detector with bias-selectable photoresponses within the mid-wave infrared band using BP/MoS₂/arsenic-doped BP heterostructures and show that our developed detectors can be integrated into a single-pixel imaging system to capture dual-band infrared imaging.

The era of nano-bionic: 2D materials for wearable and implantable body sensors

Nano-bionics have the potential of revolutionizing modern medicine. Among nano-bionic devices, body sensors allow to monitor in real-time the health of patients, to achieve personalized medicine, and even to restore or enhance human functions. The advent of two-dimensional (2D) materials is facilitating the manufacturing of miniaturized and ultrathin bioelectronics, that can be easily integrated in the human body. Their unique electronic properties allow to efficiently transduce physical and chemical stimuli into electric current. Their flexibility and nanometric thickness facilitate the adaption and adhesion to human body. The low opacity permits to obtain transparent devices. The good cellular adhesion and reduced cytotoxicity are advantageous for the integration of the devices in vivo. Herein we review the latest and more significant examples of 2D material-based sensors for health monitoring, describing their architectures, sensing mechanisms, advantages and, as well, the challenges and drawbacks that hampers their translation into commercial clinical devices.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

Waveguide-Integrated van der Waals Heterostructure Mid-Infrared Photodetector with High Performance

Extending the operation wavelength of silicon photonics to the mid-infrared (mid-IR) band will significantly benefit critical application areas, including health care, astronomy, and chemical sensing. However, a major hurdle for mid-IR silicon photonics has been the lack of high-speed, high-responsivity, and low noise-equivalent power (NEP) photodetectors. Here, we demonstrate a van der Waals (vdW) heterostructure mid-IR photodetector integrated on a silicon-on-insulator (SOI) waveguide. The detector is composed of vertically stacked black phosphorus (BP)/molybdenum ditelluride (MoTe₂). We measured high responsivity (up to 0.85 A/W) over a 3-4 μm spectral range, indicating that waveguide-confined light could strongly interact with vdW heterostructures on top. In addition, the waveguide-integrated detector could be modulated at high speed (>10 MHz) and its switching performance shows excellent stability. These results, together with the noise analysis, indicate that the NEP of the detector is as low as 8.2 pW/Hz^1/2. This reported critical missing piece in the silicon photonic toolbox will enable the wide-spread adoption of mid-IR integrated photonic circuits.

Selective Chemical Vapor Deposition Growth of WS2/MoS2 Vertical and Lateral Heterostructures on Gold Foils

Vertical and lateral heterostructures consisting of atomically layered two-dimensional (2D) materials exhibit intriguing properties, such as efficient charge/energy transfer, high photoresponsivity, and enhanced photocatalytic activities. However, the controlled fabrication of vertical or lateral heterojunctions on metal substrates remains challenging. Herein, we report a facile and controllable method for selective growth of WS₂/MoS₂ vertical or lateral heterojunctions on polycrystalline gold (Au) foil by tuning the gas flow rate of hydrogen (H₂). We find that lateral growth is favored without H₂, whereas vertical growth mode can be switched on by introducing 8–10 sccm H₂. In addition, the areal coverage of the WS₂/MoS₂ vertical heterostructures is tunable in the range of 12–25%. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) results demonstrate the quality and absence of cross-contamination of the as-grown heterostructures. Furthermore, we investigate the effects of the H₂ flow rate on the morphology of the heterostructures. These pave the way to develop unprecedented 2D heterostructures towards applications in (opto)electronic devices.

High Performance Semiconducting Nanosheets via a Scalable Powder-Based Electrochemical Exfoliation Technique

The liquid-phase exfoliation of semiconducting transition metal dichalcogenide (TMD) powders into 2D nanosheets represents a promising route toward the scalable production of ultrathin high-performance optoelectronic devices. However, the harsh conditions required negatively affect the semiconducting properties, leading to poor device performance. Herein we demonstrate a gentle exfoliation method employing standard bulk MoS₂ powder (pressed into pellets) together with the electrochemical intercalation of a quaternary alkyl ammonium. The resulting nanosheets are produced in high yield (32%) and consist primarily of mono-, bi-, triatomic layers with large lateral dimensions (>1 μm), while retaining the semiconducting polymorph. Exceptional optoelectronic performance of nanosheet thin-films is observed, such as enhanced photoluminescence, charge carrier mobility (up to 0.2 cm² V^-1 s^-1 in a multisheet device), and photon-to-current efficiency while maintaining high transparency (>80%). Specifically, as a photoanode for iodide oxidation, an internal quantum efficiency up to 90% (at +0.3 V vs Pt) is achieved (compared to only 12% for MoS₂ nanosheets produced via ultrasonication). Further using a combination of fluorescence microscopy and high-resolution scanning transmission electron microscopy (STEM), we show that our gently exfoliated nanosheets possess a defect density (2.33 × 10¹³ cm^-2) comparable to monolayer MoS₂ prepared by vacuum-based techniques and at least three times less than ultrasonicated MoS₂ nanoflakes. Finally, we expand this method toward other TMDs (WS₂, WSe₂) to demonstrate its versatility toward high-performance and fully scalable van der Waals heterojunction devices.

Gate-tunable contact-induced Fermi-level shift in semimetal

Low-dimensional semimetal–semiconductor (Sm-S) van der Waals (vdW) heterostructures have shown their potentials in nanoelectronics and nano-optoelectronics recently. It is an important scientific issue to study the interfacial charge transfer as well as the corresponding Fermi-level shift in Sm-S systems. Here we investigated the gate-tunable contact-induced Fermi-level shift (CIFS) behavior in a semimetal single-walled carbon nanotube (SWCNT) that formed a heterojunction with a transition-metal dichalcogenide (TMD) flake. A resistivity comparison methodology and a Fermi-level catch-up model have been developed to measure and analyze the CIFS, whose value is determined by the resistivity difference between the naked SWCNT segment and the segment in contact with the TMD. Moreover, the relative Fermi-level positions of SWCNT and two-dimensional (2D) semiconductors can be efficiently reflected by the gate-tunable resistivity difference. The work function change of the semimetal, as a result of CIFS, will naturally introduce a modified form of the Schottky–Mott rule, so that a modified Schottky barrier height can be obtained for the Sm-S junction. The methodology and physical model should be useful for low-dimensional reconfigurable nanodevices based on Sm-S building blocks.

Transition Metal Dichalcogenides (TMDCs) Heterostructures: Synthesis, Excitons and Photoelectric Properties

Transition metal dichalcogenides (TMDCs) have good flexibility, light absorption, and carrier mobility, and can be used to fabricate wearable devices and photodetectors. In addition, the band gaps of these materials are adjustable, which are related to the number of stacking layers. The the material properties can be changed by vertically stacking TMDCs to form van der Waals (vdW) heterostructures. Compared with single-layer TMDC, the vdW heterostructure has better light response and more efficient photoelectric conversion. Interlayer excitons formed in vdW heterostructure have a longer exciton lifetime and unique valley selectivity compared with intralayer excitons, which promotes the research on TMDCs materials in photoelectric field, valley electronics, carrier dynamics, etc. In this paper, the methods of synthesizing heterostructures are introduced. Photoelectric properties, valley dynamics, electronic properties and related applications of TMDCs vdW heterostructures are also discussed. Heterostructures stacked with different materials, stacking modes, and twist angles all can affect the properties. Hence, it brings more creativity and research direction to the material field.

Controlling Tunneling Characteristics via Bias Voltage in Bilayer Graphene/WS2/Metal Heterojunctions

Van der Waals heterojunctions, formed by stacking two-dimensional materials with various structural and electronic properties, opens a new way to design new functional devices for future applications and provides an ideal research platform for exploring novel physical phenomena. In this work, bilayer graphene/WS₂/metal heterojunctions (GWMHs) with vertical architecture were designed and fabricated. The tunneling current–bias voltage (I_t − V_b) properties of GWMHs can be tuned by 5 × 10⁶ times in magnitude for current increasing from 0.2 nA to 1 mA with applied bias voltage increasing from 10 mV to 2 V. Moreover, the transfer properties of GWMHs exhibit n-type conduction at V_b = 0.1 V and bipolar conduction at V_b = 2 V; these findings are explained well by direct tunneling (DT) and Fowler–Nordheim tunneling (FNT), respectively. The results show the great potential of GWMHs for high-power field-effect transistors (FETs) and next-generation logic electronic devices.

Construction and physical properties of low-dimensional structures for nanoscale electronic devices

Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.

Two-Dimensional Cs2AgBiBr6/WS2 Heterostructure-Based Photodetector with Boosted Detectivity via Interfacial Engineering

Two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayers have been widely used for optoelectronic devices because of their ultrasensitivity to light detection acquired from their direct gap properties. However, the small cross-section of photon absorption in the atomically thin layer thickness significantly limits the generation of photocarriers, restricting their performance. Here, we integrate monolayer WS₂ with 2D perovskites Cs₂AgBiBr₆, which serve as the light absorption layer, to greatly enhance the photosensitivity of WS₂. The efficient charge transfer at the Cs₂AgBiBr₆/WS₂ heterojunction is evidenced by the shortened photoluminescence (PL) decay time of Cs₂AgBiBr₆. Scanning photocurrent microscopy of Cs₂AgBiBr₆/WS₂/graphene reveals that improved charge extraction from graphene leads to an enhanced photoresponse. The 2D Cs₂AgBiBr₆/WS₂/graphene vertical heterostructure photodetector exhibits a high detectivity (D*) of 1.5 × 10¹³ Jones with a fast response time of 52.3 μs/53.6 μs and an on/off ratio of 1.02 × 10⁴. It is worth noting that this 2D heterostructure photodetector can realize self-powered light detection behavior with an open-circuit voltage of ∼0.75 V. The results suggest that the 2D perovskites can effectively improve the TMDC layer-based photodetectors for low-power consumption photoelectrical applications.

Photodetection Tuning with High Absorptivity Using Stacked 2D Heterostructure Films

Graphene-based photodetection (PD) devices have been broadly studied for their broadband absorption, high carrier mobility, and mechanical flexibility. Owing to graphene's low optical absorption, the research on graphene-based PD devices so far has relied on hybrid heterostructure devices to enhance photo-absorption. Designing a new generation of PD devices supported by silicon (Si) film is considered as an innovative technique for PD devices; Si film-based devices are typically utilized in optical communication and image sensing owing to the remarkable features of Si, e.g., high absorption, high carrier mobility, outstanding CMOS integration. Here, we integrate (i) Si film via a splitting/printing transfer with (ii) graphite film grown by a pyrolysis method. Consequently, p-type Si film/graphite film/n-type Si-stacked PD devices exhibited a broadband detection of 0.4-4 μm (in computation) and obtained good experimental results such as the responsivity of 100 mA/W, specific detectivity of 3.44 × 10⁶ Jones, noise-equivalent power of 14.53 × 10^-10 W/(Hz)^1/2, external quantum efficiency of 0.2, and rise/fall time of 38 μs/1 μs under 532 nm laser illumination. Additionally, our computational results also confirmed an enhanced light absorption of the above stacked 2D heterostructure film-based PD device compatible with the experimental results.

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

Liquid metals: an ideal platform for the synthesis of two-dimensional materials

The surfaces of liquid metals can serve as a platform to synthesise two-dimensional materials. By exploiting the self-limiting Cabrera-Mott oxidation reaction that takes place at the surface of liquid metals exposed to ambient air, an ultrathin oxide layer can be synthesised and isolated. Several synthesis approaches based on this phenomenon have been developed in recent years, resulting in a diverse family of functional 2D materials that covers a significant fraction of the periodic table. These straightforward and inherently scalable techniques may enable the fabrication of novel devices and thus harbour significant application potential. This review provides a brief introduction to liquid metals and their alloys, followed by detailed guidance on each developed synthesis technique, post-growth processing methods, integration processes, as well as potential applications of the developed materials.

High-Performance 3D Vertically Oriented Graphene Photodetector Using a Floating Indium Tin Oxide Channel

Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor responsivity, severely limiting their viability for light detection. Herein, we report a high-performance photodetector based on a VG/indium tin oxide (ITO) composite structure, where the VG layer serves as the light absorption layer while ITO works as the carrier conduction channel, thus achieving the broadband and high response nature of a photodetector. Under the illumination of infrared light, photoinduced carriers generated in VG could transfer to the floating ITO layer, which makes them separate and diffuse to electrodes quickly, finally realizing large photocurrent detectivity. This kind of composite structure photodetector possesses a room temperature photoresponsivity as high as ~0.7 A/W at a wavelength of 980 nm, and it still maintains an acceptable performance at temperatures as low as 87 K. In addition, a response time of 5.8 s is observed, ~10 s faster than VG photodetectors. Owing to the unique three-dimensional morphology structure of the as-prepared VG, the photoresponsivity of the VG/ITO composite photodetector also presented selectivity of incidence angles. These findings demonstrate that our novel composite structure VG device is attractive and promising in highly sensitive, fast, and broadband photodetection technology.

Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids

Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.

Van der Waals MoS2/Two-Dimensional Perovskite Heterostructure for Sensitive and Ultrafast Sub-Band-Gap Photodetection

Two-dimensional (2D) hybrid perovskites have been extensively studied as the promising light-sensitive materials in the photodetectors owing to their improved structural stability over that of their three-dimensional counterparts. However, the application of the 2D perovskite-based photodetector in the near-infrared (NIR) region is obstructed by the large intrinsic optical band gap. Herein, we develop a novel van der Waals heterostructure composed of few-layer 2D perovskite/MoS₂ nanoflakes, which exhibits high-sensitivity detection performance over a broad spectral region, from the visible region to the telecommunication wavelength (i.e., 1550 nm). In particular, the photoresponsivity and specific detectivity under an 860 nm laser reach 121 A W^-1 and 4.3 × 10¹⁴ Jones, respectively, whereas the individual nanoflakes show no response under the same wavelength. Meanwhile, the response time at the microsecond (μs) level is obtained, shortened by around 3 orders of magnitude compared to that of the constituting layers. The sensitive and ultrafast photoresponse at the NIR wavelength stems from the strong interlayer transition of sub-band-gap photons and the rapid separation of the photogenerated carriers by the built-in field within the heterojunction area. Our results not only provide an effective approach to achieve sub-band-gap photodetection in 2D perovskite-based structures but also suggest a universal strategy to fabricate high-performance optoelectronic devices.

One order enhancement of charge carrier relaxation rate by tuning structural and optical properties in annealed cobalt doped MoS2 nanosheets

The effective manipulation of excitons is crucial for the realization of exciton-based devices and circuits, and doping is considered a good strategy to achieve this.

Efficient Suppression of Charge Recombination in Self-Powered Photodetectors with Band-Aligned Transferred van der Waals Metal Electrodes

Recombination of photogenerated electron-hole pairs dominates the photocarrier lifetime and then influences the performance of photodetectors and solar cells. In this work, we report the design and fabrication of band-aligned van der Waals-contacted photodetectors with atomically sharp and flat metal-semiconductor interfaces through transferred metal integration. A unity factor α is achieved, which is essentially independent of the wavelength of the light, from ultraviolet to near-infrared, indicating effective suppression of charge recombination by the device. The short-circuit current (0.16 μA) and open-circuit voltage (0.72 V) of the band-aligned van der Waals-contacted devices are at least 1 order of magnitude greater than those of band-aligned deposited devices and 2 orders of magnitude greater than those of non-band-aligned deposited devices. High responsivity, detectivity, and polarization sensitivity ratio of 283 mA/W, 6.89 × 10¹² cm Hz^1/2 W^-1, and 3.05, respectively, are also obtained for the device at zero bias. Moreover, the efficient suppression of charge recombination in our air-stable self-powered photodetectors also results in a fast response speed and leads to polarization-sensitive performance.

Field-Dependent Band Structure Measurements in Two-Dimensional Heterostructures

In electronic and optoelectronic devices made from van der Waals heterostructures, electric fields can induce substantial band structure changes which are crucial to device operation but cannot usually be directly measured. Here, we use spatially resolved angle-resolved photoemission spectroscopy to monitor changes in band alignment of the component layers, corresponding to band structure changes of the composite heterostructure system, that are produced by electrostatic gating. Our devices comprise graphene on a monolayer semiconductor, WSe₂ or MoSe₂, atop a boron nitride dielectric and a graphite gate. Applying a gate voltage creates an electric field that shifts the semiconductor bands relative to those in the graphene by up to 0.2 eV. The results can be understood in simple terms by assuming that the materials do not hybridize.

Direct fabrication and characterization of vertically stacked Graphene/h-BN/Graphene tunnel junctions

We have used a lithography free technique for the direct fabrication of vertically stacked two-dimensional (2D) material-based tunnel junctions and characterized by Raman, AFM, XPS. We fabricated Graphene/h-BN/Graphene devices by direct deposition of graphene (bottom layer), h-BN (insulating barrier) and graphene (top layer) sequentially using a plasma enhanced chemical vapor deposition on Si/SiO2 substrates. The thickness of the h-BN insulating layer was varied by tuning the plasma power and the deposition time. Samples were characterized by Raman, AFM, and XPS. The I-V data follows the barrier thickness dependent quantum tunneling behavior for equally doped graphene layers. The resonant tunneling behavior was observed at room temperature for oppositely doped graphene layers where hydrazine and ammonia were used for n-doping of one of the graphene layers. The resonance with negative differential conductance occurs when the band structures of the two electrodes are aligned. The doping effect of the resonant peak is observed for varying doping levels. The results are explained according to the Bardeen tunneling model.

Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2

Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory. Besides, most of the inverters were made of mechanically exfoliated materials, which hinders their reproducible production and large-scale integration in practical application. In this study, we demonstrate a practical approach to fabricate CMOS inverter arrays using large-area p-MoTe₂ and n-MoS₂, which are grown via chemical vapor deposition method. The current characteristics of the channel materials are balanced by atomic layer depositing Al₂O₃. Complete logic swing and clear dynamic switching behavior are observed in the inverters. Especially, ultra-low power consumption of ∼0.37 nW is achieved. Our work paves the way for the application of 2D TMDCs materials in large-scale low-power-consumption logic circuits.

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A practical approach to fabricate large-scale CMOS inverter arrays is demonstrated

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A method to balance the current characteristics of the channel materials is developed

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Complete logic swing and clear dynamic switching behavior are observed

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Ultra-low power consumption of ∼0.37 nW is achieved

Tunable Quantum Tunneling through a Graphene/Bi2Se3 Heterointerface for the Hybrid Photodetection Mechanism

Graphene-based van der Waals heterostructures are promising building blocks for broadband photodetection because of the gapless nature of graphene. However, their performance is mostly limited by the inevitable trade-off between low dark current and photocurrent generation. Here, we demonstrate a hybrid photodetection mode based on the photogating effect coupled with the photovoltaic effect via tunable quantum tunneling through the unique graphene/Bi₂Se₃ heterointerface. The tunneling junction formed between the semimetallic graphene and the topologically insulating Bi₂Se₃ exhibits asymmetric rectifying and hysteretic current-voltage characteristics, which significantly suppresses the dark current and enhances the photocurrent. The photocurrent-to-dark current ratio increases by about a factor of 10 with the electrical tuning of tunneling resistance for efficient light detection covering the major photonic spectral band from the visible to the mid-infrared ranges. Our findings provide a novel concept of using tunable quantum tunneling for highly sensitive broadband photodetection in mixed-dimensional van der Waals heterostructures.

Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures

Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies. On the other hand, under DUV laser illumination and external bias voltage, graphene electrodes efficiently collect photo-excited carriers in hBN, which generates high photocurrent. Laser excitation micro-spectroscopy shows that the radiative recombination and photocarrier excitation processes in the heterostructures mainly originate from the pristine structure and the stacking faults in hBN. Our work provides a pathway toward efficient DUV light emitting and detection devices based on hBN.

Toward High-Performance Self-Driven Photodetectors via Multistacking Van der Waals Heterostructures

The unique optoelectronic properties of layered van der Waals (vdW) heterostructures open up exciting opportunities for high-performance photodetectors. Self-driven photodetectors are desirable for reducing power consumption and minimizing the device size. Here, a semiconductor-insulator-semiconductor-type multistacking WSe₂/graphene/h-BN/MoS₂ vdW heterostructure is demonstrated to realize an enhanced self-powered photodetector with a high on-off current ratio of about 1.2 × 10⁵ and a high photoresponsivity of 3.6 A/W without applying bias, which is the highest photoresponsivity ever reported for self-powered photodetectors. Because of the difference in the Fermi level, a built-in electrical field is formed at the WSe₂/graphene junction, where the photoexcited electrons and holes can be efficiently separated and the carriers can easily tunnel through the MoS₂/h-BN junction driven by the enhanced potential. Therefore, the enhanced self-powered photodetection is attributable to highly efficient carrier tunneling through large h-BN electron barriers. By comparison, when the stacking sequence is changed to make WSe₂/MoS₂ p-n heterojunctions lay on graphene/h-BN, the self-powered photocurrent is still generated because of the type-II band alignment, which exhibits lower but still relevant values with a light on/off ratio of ∼8 × 10³ and a photoresponsivity of ∼2.39 A/W. The efficient enhancement demonstrates that multistacking heterostructures significantly elevate the performance of self-powered photodetectors, providing a feasible route to develop high-performance self-powered optoelectronic devices and extend their applications in integrated optoelectronic systems.

Controlling Carrier Transport in Vertical MoTe2/MoS2 van der Waals Heterostructures

Two-dimensional (2D) transition-metal dichalcogenide (TMDC)-based semiconducting van der Waals (vdW) heterostructures are considered as potential candidates for next-generation nanoelectronics due to their unique and tunable properties. Controlling the carrier type and band alignment in 2D TMDCs and their vdW heterostructures is critical for realizing heterojunctions with the desired performances and functionalities. In this report, controlling the carrier type and band alignment in a vertical MoTe₂/MoS₂ heterojunction is presented via thickness engineering and surface charge transfer doping. A highly rectifying p-n diode and a nonrectifying n-n junction are obtained with different MoTe₂ thicknesses due to their different doping conditions. A vertical tunnel diode is subsequently achieved with a controlled oxygen plasma treatment, which selectively induces degenerate p-type doping to MoTe₂, whereas the intrinsic n-type characteristic of MoS₂ is maintained during the treatment. These techniques to realize multifunctional diodes are universal and applicable to emerging nanoelectronics based on 2D materials.

2D Magnetic Heterostructures and Their Interface Modulated Magnetism

In recent years, two-dimensional (2D) magnetic heterostructures have captured widespread interest as they provide a fertile ground for exploring the novel properties induced by interfacial magnetic coupling, modulating the intrinsic magnetism of the 2D magnet, and exploiting new spintronic device applications. In this Spotlight on Applications, dominating synthetic strategies employed to fabricate 2D magnetic heterostructures are introduced first. Notably, we then concentrate on two different kinds of magnetic interfaces, namely, the magnetic-nonmagnetic interface and the magnetic-magnetic interface. Specifically, various interface modulated magnetisms such as valley splitting and the anomalous Hall effect as well as their related device applications such as magnetic tunnel junctions have been further reviewed and discussed. Finally, we briefly summarize the recent progress of 2D magnetic heterostructures and outline the future development direction of this booming field.

Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures

Growth of 2D materials under ultrahigh-vacuum (UHV) conditions allows for an in situ characterization of samples with direct spectroscopic insight. Heteroepitaxy of transition-metal dichalcogenides (TMDs) in UHV remains a challenge for integration of several different monolayers into new functional systems. In this work, we epitaxially grow lateral WS₂-MoS₂ and vertical WS₂/MoS₂ heterostructures on graphene. By means of scanning tunneling spectroscopy (STS), we first examined the electronic structure of monolayer MoS₂, WS₂, and WS₂/MoS₂ vertical heterostructure. Moreover, we investigate a band bending in the vicinity of the narrow one-dimensional (1D) interface of the WS₂-MoS₂ lateral heterostructure and mirror twin boundary (MTB) in the WS₂/MoS₂ vertical heterostructure. Density functional theory (DFT) is used for the calculation of the band structures, as well as for the density of states (DOS) maps at the interfaces. For the WS₂-MoS₂ lateral heterostructure, we confirm type-II band alignment and determine the corresponding depletion regions, charge densities, and the electric field at the interface. For the MTB, we observe a symmetric upward bend bending and relate it to the dielectric screening of graphene affecting dominantly the MoS₂ layer. Quasi-freestanding heterostructures with sharp interfaces, large built-in electric field, and narrow depletion region widths are proper candidates for future designing of electronic and optoelectronic devices.

Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe2/InSe Heterostructure by a Photogating Effect

Ambipolar photoresponsivity mainly originates from intrinsic or interfacial defects. However, these defects are difficult to control and will prolong the response speed of the photodetector. Here, we demonstrate tunable ambipolar photoresponsivity in a photodetector built from vertical p-WSe₂/n-InSe heterostructures with photogating effect, exhibiting ultrahigh photoresponsivity from -1.76 × 10⁴ to 5.48 × 10⁴ A/W. Moreover, the photodetector possesses broadband photodetection (365-965 nm), an ultrahigh specific detectivity (D*) of 5.8 × 10¹³ Jones, an external quantum efficiency of 1.86 × 10⁷%, and a rapid response time of 20.8 ms. The WSe₂/InSe vertical architecture has promising potential in developing high-performance nano-optoelectronics.

Negative Differential Photoconductance as a Signature of Nonradiative Energy Transfer in van der Waals Heterojunction

The physical proximity of layered materials in their van der Waals heterostructures (vdWhs) aids interfacial phenomena such as charge transfer (CT) and energy transfer (ET). Besides providing fundamental insights, CT and ET also offer routes to engineer optoelectronic properties of vdWhs. For example, harnessing ET in vdWhs can help to overcome the limitations of optical absorption imposed by the ultra-thin nature of layered materials and thus provide an opportunity for in situ enhancement of quantum efficiency for light-harvesting and sensing applications. While several spectroscopic studies on vdWhs probed the dynamics of CT and ET, the possible contribution of ET in the photocurrent generation remains largely unexplored. In this work, we investigate the role of nonradiative energy transfer (NRET) in the photocurrent through a vertical vdWh of SnSe₂/MoS₂/TaSe₂. We observe an unusual negative differential photoconductance (NDPC) arising from the existence of NRET across the SnSe₂/MoS₂ junction. Modulation of the NRET-driven NDPC characteristics with optical power results in a striking transition of the photocurrent's power law from a sublinear to a superlinear regime. Our observations reveal the nontrivial influence of ET on the photoresponse of vdWhs, which offer insights to harness ET in synergy with CT for vdWh based next-generation optoelectronics.

Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning

Triggered by the pioneering research on graphene, the family of two-dimensional layered materials (2DLMs) has been investigated for more than a decade, and appealing functionalities have been demonstrated. However, there are still challenges inhibiting high-quality growth and circuit-level integration, and results from previous studies are still far from complying with industrial standards. Here, we overcome these challenges by utilizing machine-learning (ML) algorithms to evaluate key process parameters that impact the electrical characteristics of MoS₂ top-gated field-effect transistors (FETs). The wafer-scale fabrication processes are then guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing. A 62-level SPICE modeling was implemented for MoS₂ FETs and further used to construct functional digital, analog, and photodetection circuits. Finally, we present wafer-scale test FET arrays and a 4-bit full adder employing industry-standard design flows and processes. Taken together, these results experimentally validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials.

Here, the authors demonstrate the application of machine learning to optimize the device fabrication process for wafer-scale 2D semiconductors, and eventually fabricate digital, analog, and optoelectrical circuits.

Emerging beyond-graphene elemental 2D materials for energy and catalysis applications

Elemental two-dimensional (2D) materials have emerged as promising candidates for energy and catalysis applications due to their unique physical, chemical, and electronic properties. These materials are advantageous in offering massive surface-to-volume ratios, favorable transport properties, intriguing physicochemical properties, and confinement effects resulting from the 2D ultrathin structure. In this review, we focus on the recent advances in emerging energy and catalysis applications based on beyond-graphene elemental 2D materials. First, we briefly introduce the general classification, structure, and properties of elemental 2D materials and the new advances in material preparation. We then discuss various applications in energy harvesting and storage, including solar cells, piezoelectric and triboelectric nanogenerators, thermoelectric devices, batteries, and supercapacitors. We further discuss the explorations of beyond-graphene elemental 2D materials for electrocatalysis, photocatalysis, and heterogeneous catalysis. Finally, the challenges and perspectives for the future development of elemental 2D materials in energy and catalysis are discussed.

Ultra-High Performance Amorphous Ga2 O3 Photodetector Arrays for Solar-Blind Imaging

The growing demand for scalable solar-blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar-blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh-performance metal-semiconductor-metal (MSM) SBPDs based on amorphous (a-) Ga2 O3 via a post-annealing process. The post-annealed MSM a-Ga2 O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain-bandwidth product over 104 at 5 V. The SBPDs also show ultrahigh photo-to-dark current ratio of 3.9 × 107 . Additionally, the PDs demonstrate super-high specific detectivity of 3.9 × 1016 Jones owing to the extremely low noise down to 3.5 fW Hz-1/2 , suggesting high signal-to-noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large-scale, high-uniformity 32 × 32 image sensor array based on the post-annealed a-Ga2 O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2 O3 PDs for applications in solar-blind imaging, environmental monitoring, artificial intelligence and machine vision.

Photovoltaic Field-Effect Photodiodes Based on Double van der Waals Heterojunctions

High performance photodetectors based on van der Waals heterostructures (vdWHs) are crucial to developing micro-nano-optoelectronic devices. However, reports show that it is difficult to balance fast response and high sensitivity. In this work, we design a photovoltaic field-effect photodiode (PVFED) based on the WSe₂/MoS₂/WSe₂ double vdWHs, where the photovoltage that originated from one vdWH modulates the optoelectronic characteristics of another vdWH. The proposed photodiode exhibits an excellent self-powered ability with a high responsivity of 715 mA·W^-1 and fast response time of 45 μs. This work demonstrates an efficient method that optimizes the photoelectric performance of vdWH by introducing the photovoltaic field effect.

Spin photovoltaic effect in magnetic van der Waals heterostructures

The development of van der Waals (vdW) crystals and their heterostructures has created a fascinating platform for exploring optoelectronic properties in the two-dimensional (2D) limit. With the recent discovery of 2D magnets, the control of the spin degree of freedom can be integrated to realize 2D spin-optoelectronics. Here, we report spin photovoltaic effects in vdW heterostructures of 2D magnet chromium triiodide (CrI₃) sandwiched by graphene contacts. The photocurrent displays a distinct dependence on light helicity, which can be tuned by varying the magnetic states and photon energy. Circular polarization–resolved absorption measurements reveal that these observations originate from magnetic order–coupled and, thus, helicity-dependent charge-transfer excitons. The photocurrent displays multiple plateaus as the magnetic field is swept, associated with different CrI₃ spin configurations. Giant photo-magnetocurrent is observed, which tends to infinity for a small applied bias. Our results pave the way to explore emergent photospintronics by engineering magnetic vdW heterostructures.

Electrically or chemically tunable photodetector with ultra high responsivity using graphene/InN nanowire based mixed dimensional barristors

In this work, an electrically/chemically tunable highly sensitive photodetector based on mixed dimensional heterojunction of graphene and planar InN nanowires (NW) is presented. Controlled partial oxidation of InN has been employed to effectively reduce the high surface carrier concentration of InN, which normally prevents it from forming good rectifying contact with graphene. The resulting surface modified InN NWs have been found to form excellent Schottky junction with graphene, with an increase in effective Schottky barrier height (SBH) by over 1.1 eV and a ratio of forward and reverse bias currents exceeding 4 orders of magnitude. Moreover, very strong barristor (gate tunable heterojunction) action has been observed, withI_on/I_off ≈ 4 orders of magnitude, and SBH increase by >0.3 eV. The barristor has been demonstrated to be highly sensitive to light, especially in the ultra-voilet, visible and near IR spectra. Responsivity was found to be widely tunable by gate voltage, with the highest value exceeding 1000 A W^-1. Rise and fall times being in the range of hundreds of ms are indicative of photoconductive gain, which can be attributed to the ultra high responsivity. A method of semi-permanent molecular doping has been demonstrated to realize a two-terminal version of the photodetector, where the desired responsivity can still be achieved without requiring a back gate terminal, enabling the device to be realized on insulating substrates. The effect of encapsulation has been studied as a function of time, which has showed the long term stability of the dopant-induced enhancement and ultra high responsivity of the barristor photodetector.

Monolithic Tandem Multicolor Image Sensor Based on Electrochromic Color-Radix Demultiplexing

Optical data acquisition has been set as one of the milestones to testify the developments aimed at harnessing the full potential of the spatial and temporal data processing capabilities of the advanced semiconductor technology. A highly promising approach to drive the level of acquisition beyond the current technological node is the vertical integration of multiple photodetectors. However, vertical integration so far requires the same level of circuit complexity as lateral integration from the incapability of monolithic integration. Here, an electrochromic device architecture is introduced that enables realization of a monolithic tandem multicolor photodetector. The device, composed of vertically stacked p-type and n-type graphene barristors, is demonstrated to be capable of regulating the balanced charge transport under any desired illumination wavelengths. It exhibits variable anti-ambipolar charge transport behavior, which yields sensitive voltage-controlled photoconductive gain spectra. These electrical behaviors are utilized to fabricate an optoelectronic logic sensor that can demultiplex the desired color coordinate or wavelength in the constituent array with high color accuracy.

Light Controllable Electronic Phase Transition in Ionic Liquid Gated Monolayer Transition Metal Dichalcogenides

Ionic liquid gating has proved to be effective in inducing emergent quantum phenomena such as superconductivity, ferromagnetism, and topological states. The electrostatic doping at two-dimensional interfaces relies on ionic motion, which thus is operated at sufficiently high temperature. Here, we report the in situ tuning of quantum phases by shining light on an ionic liquid-gated interface at cryogenic temperatures. The light illumination enables flexible switching of the quantum transition in monolayer WS₂ from an insulator to a superconductor. In contrast to the prevailing picture of photoinduced carriers, we find that in the presence of a strong interfacial electric field conducting electrons could escape from the surface confinement by absorbing photons, mimicking the field emission. Such an optical tuning tool in conjunction with ionic liquid gating greatly facilitates continuous modulation of carrier densities and hence electronic phases, which would help to unveil novel quantum phenomena and device functionality in various materials.

Solution-Processed Two-Dimensional Metal Oxide Anticorrosion Nanocoating

Molecularly thin two-dimensional (2D) nanomaterials are attractive building blocks for constructing anticorrosion nanocoatings as an ultimate pursuit in the metal-related industry. However, the nanocoating of prefocused graphene is far from industrial demands due to its high cost, low scalability, and insufficient quality. We propose all requirements to realize rational anticorrosion nanocoating of metal oxide nanosheets. The proof-of-concept study with Ti_0.87O₂ and Ca₂Nb₃O₁₀ nanosheets demonstrates that the 10 and 20 nm thick coatings fabricated by a facile layer-by-layer (LbL) self-assembly on stainless steel (SUS) give perfect inhibition efficiency (IE) values of 99.92% and 99.89%, respectively. A driving test with a nanosheet-coated car-baffle demonstrated suitable corrosion resistance and mechanical and thermal robustness for industrial applications. The revealed and controlled thermal oxidation mechanisms are critical toward high-temperature application of the 2D oxide anticorrosion nanocoating. The advantages of nanosheet coating and extensible materials design will open a solid but exciting route to anticorrosion nanotechnology.

Criteria for Assessing the Interlayer Coupling of van der Waals Heterostructures Using Ultrafast Pump-Probe Photoluminescence Spectroscopy

van der Waals (vdW) heterostructures of transition metal dichalcogenides (TMDCs) provide an excellent paradigm for next-generation electronic and optoelectronic applications. However, the reproducible fabrications of vdW heterostructure devices and the boosting of practical applications are severely hindered by their unstable performance, due to the lack of criteria to assess the interlayer coupling in heterostructures. Here we propose a physical model involving ultrafast electron transfer in the heterostructures and provide two criteria, η (the ratio of the transferred electrons to the total excited electrons) and ζ (the relative photoluminescence variation), to evaluate the interlayer coupling by considering the electron transfer in TMDC heterostructures and numerically simulating the corresponding rate equations. We have proved the effectiveness and robustness of two criteria by measuring the pump-probe photoluminescence intensity of monolayer WS₂ in the WS₂/WSe₂ heterostructures. During thermal annealing of WS₂/WSe₂, ζ varies from negative to positive values and η changes between 0 and 4.5 × 10^-3 as the coupling strength enhanced; both of them can well characterize the tuning of interlayer coupling. We also design a scheme to image the interlayer coupling by performing PL imaging at two time delays. Our scheme offers powerful criteria to assess the interlayer coupling in TMDC heterostructures, offering opportunities for the implementation of vdW heterostructures for broadband and high-performance electronic and optoelectronic applications.

Kinetic photovoltage along semiconductor-water interfaces

External photo-stimuli on heterojunctions commonly induce an electric potential gradient across the interface therein, such as photovoltaic effect, giving rise to various present-day technical devices. In contrast, in-plane potential gradient along the interface has been rarely observed. Here we show that scanning a light beam can induce a persistent in-plane photoelectric voltage along, instead of across, silicon-water interfaces. It is attributed to the following movement of a charge packet in the vicinity of the silicon surface, whose formation is driven by the light-induced potential change across the capacitive interface and a high permittivity of water with large polarity. Other polar liquids and hydrogel on silicon also allow the generation of the in-plane photovoltage, which is, however, negligible for nonpolar liquids. Based on the finding, a portable silicon-hydrogel array has been constructed for detecting the shadow path of a moving Cubaris. Our study opens a window for silicon-based photoelectronics through introducing semiconductor-water interfaces.

Graphene-Based Hybrid Functional Materials

Graphene is a 2D material combining numerous outstanding physical properties, including high flexibility and strength, extremely high thermal conductivity and electron mobility, transparency, etc., which make it a unique testbed to explore fundamental physical phenomena. Such physical properties can be further tuned by combining graphene with other nanomaterials or (macro)molecules to form hybrid functional materials, which by design can display not only the properties of the individual components but also exhibit new properties and enhanced characteristics arising from the synergic interaction of the components. The implementation of the hybrid approach to graphene also allows boosting the performances in a multitude of technological applications. This review reports the hybrids formed by graphene combined with other low-dimensional nanomaterials of diverse dimensionality (0D, 1D, and 2D) and (macro)molecules, with emphasis on the synthetic methods. The most important applications of these hybrids in the fields of sensing, water purification, energy storage, biomedical, (photo)catalysis, and opto(electronics) are also reviewed, with a special focus on the superior performances of these hybrids compared to the individual, nonhybridized components.

Large-Scale Uniform-Patterned Arrays of Ultrathin All-2D Vertical Stacked Photodetector Devices

The key to unlocking the full potential of two-dimensional (2D) materials in ultrathin opto-electronics is their layer-by-layer integration and the ability to produce them on the wafer scale using traditional industry-compatible technology. Here, we demonstrate a novel stacking method for assembling uniform-patterned periodic 2D arrays into vertical-layered heterostructures. The fabricated heterostructure can serve as photodetectors, with graphene electrodes and transition-metal dichalcogenides as the photo-absorber. All 2D materials used are grown into continuous films with only mono- or bilayer thickness. Each layer is prepatterned into a specific shape on a substrate and then transferred to the device substrate with aligned precision. In order to achieve long-range alignment across the wafer, interlocking marker pairs are used to help guide the lateral accuracy and reduce rotational error. We show hundreds of identical devices produced with 2D periodic spacing on a 1 cm × 1 cm SiO₂/Si substrate, a fundamental prerequisite for future pixelated detectors. Statistics of the photovoltaic performance of the devices are reported, with values that are comparable to devices made by chemical vapor deposition-grown materials. Our work provides pathways for the large-scale fabrication of ultrathin all-2D opto-electronics that form the basis of the future in 2D-pixelated cameras and displays.

Modification of interface and electronic transport in van der Waals heterojunctions by UV/O3

Two-dimensional (2D) van der Waals heterojunctions have many unique properties, and energy band modulation is central to applying these properties to electronic devices. Taking the 2D graphene/MoS₂heterojunction as a model system, we demonstrate that the band structure can be finely tuned by changing the graphene structure of the 2D heterojunction via ultraviolet/ozone (UV/O₃). With increasing UV/O₃exposure time, graphene in the heterojunction has more defect structures. The varied defect levels in graphene modulate the interfacial charge transfer, accordingly the band structure of the heterojunction. And the corresponding performance change of the graphene/MoS₂field effect transistor indicates the shift of the Schottky barrier height after UV/O₃treatment. The result further proves the effective band structure modulation of the graphene/MoS₂heterojunction by UV/O₃. This work will be beneficial to both fundamental research and practical applications of 2D van der Waals heterojunction in electronic devices.

Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors

Photodetectors built from conventional bulk materials such as silicon, III-V or II-VI compound semiconductors are one of the most ubiquitous types of technology in use today. The past decade has witnessed a dramatic increase in interest in emerging photodetectors based on perovskite materials driven by the growing demands for uncooled, low-cost, lightweight, and even flexible photodetection technology. Though perovskite has good electrical and optical properties, perovskite-based photodetectors always suffer from nonideal quantum efficiency and high-power consumption. Joint manipulation of electrons and photons in perovskite photodetectors is a promising strategy to improve detection efficiency. In this review, electrical and optical characteristics of typical types of perovskite photodetectors are first summarized. Electrical manipulations of electrons in perovskite photodetectors are discussed. Then, artificial photonic nanostructures for photon manipulations are detailed to improve light absorption efficiency. By reviewing the manipulation of electrons and photons in perovskite photodetectors, this review aims to provide strategies to achieve high-performance photodetectors.