Evolution of electronic structure in atomically thin sheets of WS2 and WSe2

Operational Limits and Failure Mechanisms in All-2D van der Waals Vertical Heterostructure Devices with Long-Lived Persistent Electroluminescence

Various 2D materials can be assembled into vertical heterostructure stacks that emit strong electroluminescence. However, to date, most work is done using mechanical exfoliated materials, with little insights gained into the operation limits and failure mechanisms due to the limited number of devices produced and the device-to-device variances. However, when using chemical vapor deposition (CVD) grown 2D crystals, it is possible to construct dozens of devices to generate statistics and ensemble insights, providing a viable way toward scalable industrialization of 2D optoelectronics. In particular, the operation lifetime/duration of electroluminescence and subsequent failure mechanisms are poorly understood. Here, we demonstrate that all-2D vertical layered heterostructure (VLH) devices made using CVD-grown materials (Gr:h-BN:WS₂:h-BN:Gr) can generate strong red electroluminescence (EL) with continuous operation for more than 2 h in ambient atmospheric conditions under constant bias. Layer-by-layer controlled assembly is used to achieve graphene top and bottom electrodes in a crossbar geometry, with few layered h-BN continuous films as tunnel barriers for direct carrier injection into semiconducting monolayer WS₂ single crystals with direct band gap recombination. Tens of the devices were fabricated in a single chip, with strong EL routinely measured under both positive and negative graphene electrode bias. The success rate for EL emission in devices is over 90%. EL starts to be detected at bias values of ∼5 V, with bright red emission located at the crossbar intersection site, with intensity increasing with applied bias. Long-lived persistent EL is demonstrated for more than 2 h without significant degradation of WS₂ under high bias conditions of 20 V. In cycling tests, the EL signal peak position and intensity stay almost the same after several ON/OFF cycles with high bias, which proves that our device has good stability and durability when pulsed. Breakdown of the device is shown to occur at a bias value of ∼35 V, whereby current reduces to zero and EL abruptly stops, due to breakdown of the top graphene electrode, associated with local heating accumulation. This study provides a viable way for wafer-scale fabrication of high-performance 2D EL arrays for ultrathin optoelectronic devices and sheds light on the mechanisms of failure and operation limits of EL devices in ambient conditions.

Electronic structure and thermoelectric properties of Mo-based dichalcogenide monolayers locally and randomly modified by substitutional atoms

Density functional theory and Boltzmann transport equations are used to investigate electronic band structure and thermoelectric (TE) properties of different two-dimensional (2D) materials containing Mo, S, Nb, Se, and Te. In MoS₂-based monolayers (MLs) the substitution of S atoms by Te atoms up to the concentration of 12.5 at% leads to a more significant change of the band structure than in the corresponding case with Se atoms. In particular, the bandgap is reduced. At a high concentration of Se or Te the electronic structure becomes more similar to that of the SeMoS or TeMoS Janus layers, and the MoSe₂ or MoTe₂ MLs. It is found that local and random introduction of substitutional Se or Te atoms yields not very different results. The substitution of Mo by Nb, at the concentration of 2.1 at% leads to hole levels. The thermoelectric properties of the considered 2D materials are quantified by the Seebeck coefficient and thermoelectric figure of merit. The two characteristics are determined for different levels of p- or n-doping of the MLs and for different temperatures. Compared to the pristine MoS₂ ML, Te substitutional atoms cause more changes of the thermoelectric properties than Se atoms. However, MLs with Se substitutional atoms show a high thermoelectric figure of merit in a broader range of possible p- or n-doping levels. In most cases, the maximum thermoelectric figure of merit is about one, both in p- and n-type materials, and for temperatures between 300 and 1200 K. This is not only found for MoS₂-based MLs with substitutional atoms but also for the Janus layers and for MoSe₂ or MoTe₂ MLs. Interestingly, for MLs with one Nb as well as two or four Te substitutional atoms the highest values of the TE figure of merit of 1.2 and 1.40, respectively, are obtained at a temperature of 1200 K.

Controlling electronic and thermoelectric properties of MoS₂ monolayers by changing concentration of Se and Te chalcogenide.

Colloidal WSe2 nanocrystals as anodes for lithium-ion batteries

Transition metal dichalcogenides (TMDs) are gaining increasing interest in the field of lithium ion batteries due to their unique structure. However, previous preparation methods have mainly focused on their growth from substrates or by exfoliation of the bulk materials. Considering colloidal synthesis has many advantages including precision control of morphology and crystal phases, there is significant scope for exploring this avenue for active material formation. Therefore, in this work, we explore the applicability of colloidal TMDs using WSe₂ nanocrystals for Li ion battery anodes. By employing colloidal hot-injection protocol, we first synthesize 2D nanosheets in 2H and 1T' crystal phases. After detailed structural and surface characterization, we investigate the performance of these nanosheets as anode materials. We found that 2H nanosheets outperformed 1T' nanosheets exhibiting a higher specific capacity of 498 mA h g^-1 with an overall capacity retention of 83.28%. Furthermore, to explore the role of morphology on battery performance, 3D interconnected nanoflowers in 2H crystal phase were also investigated as an anode material. It is worth noting that a specific capacity of 982 mA h g^-1 was exhibited after 100 cycles by these nanoflowers. The anode materials were characterized prior to cycling and after 1, 25, and 100 charge/discharge cycles, by scanning electron microscopy (SEM) and transmission electron microscopy (TEM), to track the effects of cycling on the material.

Heterogeneous Electronic and Photonic Devices Based on Monolayer Ternary Telluride Core/Shell Structures

Device engineering based on the tunable electronic properties of ternary transition metal dichalcogenides has recently gained widespread research interest. In this work, monolayer ternary telluride core/shell structures are synthesized using a one-step chemical vapor deposition process with rapid cooling. The core region is the tellurium-rich WSe_{2-2 x} Te_{2 x} alloy, while the shell is the tellurium-poor WSe_{2-2 y} Te_{2 y} alloy. The bandgap of the material is ≈1.45 eV in the core region and ≈1.57 eV in the shell region. The lateral gradient of the bandgap across the monolayer heterostructure allows for the fabrication of heterogeneous transistors and photodetectors. The difference in work function between the core and shell regions leads to a built-in electric field at the heterojunction. As a result, heterogeneous transistors demonstrate a unidirectional conduction and strong photovoltaic effect. The bandgap gradient and high mobility of the ternary telluride core/shell structures provide a unique material platform for novel electronic and photonic devices.

Flexible paper based piezo-resistive sensor functionalised by 2D-WSe2 nanosheets

High-performance electronics demand extremely sensitive piezo-resistive sensors with important features such as low-fabrication cost, easy implementation, low power consumption and high-pressure sensitivity over broad pressure range. Herein, we report a flexible piezo-resistive paper-based device functionalised by WSe₂ nanosheets. An efficient and low-cost fabrication strategy using Whatman filter paper and tissue paper is adopted for versatile sensing applications. The WSe₂ nanosheets were synthesized by high-yield and size-controlled liquid phase exfoliation technique. The flexible WSe₂ nanosheets-paper sensor shows excellent response in broad pressure range of 1 Pa-100 kPa with exceptionally high sensitivity of 29.24 kPa^-1, current responsivity of 70 and response time of 100 ms. The pressure sensor is also employed to recognize the pressure generated due to finger tapping. Encouragingly, the piezo-resistive sensors can also sense extremely small pressure differences of about 1.4 Pa generated by water drops.

Strain tuning of the Stokes shift in atomically thin semiconductors

Atomically thin layers of transition metal dichalcogenides (TMDC) have exceptional optical properties, exhibiting a characteristic absorption and emission at excitonic resonances. Due to their extreme flexibility, strain can be used to alter the fundamental exciton energies and line widths of TMDCs. Here, we report on the Stokes shift, i.e. the energetic difference of light absorption and emission, of the A exciton in TMDC mono- and bilayers. We demonstrate that mechanical strain can be used to tune the Stokes shift. We perform optical transmission and photoluminescence (PL) experiments on mono- and bilayers and apply uniaxial tensile strain of up to 1.2% in MoSe2 and WS2 bilayers. An A exciton red shift of -38 meV/% and -70 meV/% is found in transmission in MoSe2 and WS2, while smaller values of -27 meV/% and -62 meV/% are measured in PL, respectively. Therefore, a reduction of the Stokes shift is observed under increasing tensile strain. At the same time, the A exciton PL line widths narrow significantly with -14 meV/% (MoSe2) and -21 meV/% (WS2), demonstrating a drastic change in the exciton-phonon interaction. By comparison with ab initio calculations, we can trace back the observed shifts of the excitons to changes in the electronic band structure of the materials. Variations of the relative energetic positions of the different excitons lead to a decrease of the exciton-phonon coupling. Furthermore, we identify the indirect exciton emission in bilayer WS2 as the ΓK transition by comparing the experimental and theoretical gauge factors.

High Thermoelectric Performance in Two-Dimensional Janus Monolayer Material WS-X (X = Se and Te)

In the present work, Janus monolayers WSSe and WSTe are investigated by combining first-principles calculations and semiclassical Boltzmann transport theory. Janus WSSe and WSTe monolayers show a direct band gap of 1.72 and 1.84 eV at K-points, respectively. These layered materials have an extraordinary Seebeck coefficient and electrical conductivity. This combination of high Seebeck coefficient and high electrical conductivity leads to a significantly large power factor. In addition, the lattice thermal conductivity in the Janus monolayer is found to be relatively very low as compared to the WS₂ monolayer. This leads to a high figure of merit (ZT) value of 2.56 at higher temperatures for the Janus WSTe monolayer. We propose that the Janus WSTe monolayer could be used as a potential thermoelectric material due to its high thermoelectric performance. The result suggests that the Janus monolayer is a better candidate for excellent thermoelectric conversion.

Modulating flow near substrate surface to grow clean and large-area monolayer MoS2

Chemical vapour deposition (CVD) is one of the most promising methods to synthesize monolayers of 2D materials like transition metal dichalcogenides (TMDs) over a large area with high film quality. Among many parameters that determine the growth of 2D materials, flow of precursor near the surface is one of the most sensitive conditions. In this study, we show how subtle changes in the flow near the substrate surface can affect the quality and coverage of the MoS₂ monolayer. We fine tune the flow of the carrier gas near the substrate under two extreme conditions to grow large area and clean monolayer. In the first study, we grew several centimetres long continuous monolayer under the condition, which generally produces monolayers of few tens of micrometres in size without tuning the flow on the substrate surface. In the second case, we got monolayer MoS₂ under the conditions meant for the formation of bulk MoS₂.We achieved this by placing blockades on the substrate surface which helped in modifying the flow near them. Through simulation, we showed how the flow is affected near these blockades and used it as a guiding rule to grow patterned continuous MoS₂ monolayers. Detailed electrical and optical measurements were done to determine the quality of the as-grown samples. Our studies provide a way to obtain clean, large area monolayer of desired pattern by tuning the flow of precursor on the vicinity of the substrate surface even when the growth conditions in CVD are far from optimum.

Rapid and Low-Temperature Molecular Precursor Approach toward Ternary Layered Metal Chalcogenides and Oxides: Mo1-x W x S2 and Mo1-x W x O3 Alloys (0 ≤ x ≤ 1)

Metal sulfide and metal oxide alloys of the form Mo_1-x W _x S₂ and Mo_1-x W _x O₃ (0 ≤ x ≤ 1) are synthesized with varying nominal stoichiometries (x = 0, 0.25, 0.50, 0.75, and 1.0) by thermolysis of the molecular precursors MoL₄ and WS(S₂)L₂ (where L = S₂CNEt₂) in tandem and in various ratios. Either transition-metal dichalcogenides or transition-metal oxides can be produced from the same pair of precursors by the choice of reaction conditions; metal sulfide alloys of the form Mo_1-x W _x S₂ are produced in an argon atmosphere, while the corresponding metal oxide alloys Mo_1-x W _x O₃ are produced in air, both under atmospheric pressure at 450 °C and for only 1 h. Changes in Raman spectra and in powder X-ray diffraction patterns are observed across the series of alloys, which confirm that alloying is successful in the bulk materials. For the oxide materials, we show that the relatively complicated diffraction patterns are a result of differences in the tilt angle of MO₆ octahedra within three closely related unit cell types. Alloying of Mo and W in the products is characterized at the microscale and nanoscale by scanning electron microscopy-energy-dispersive X-ray spectroscopy (EDX) and scanning transmission electron microscopy-EDX spectroscopy, respectively.

Excitonic Energy Transfer in Heterostructures of Quasi-2D Perovskite and Monolayer WS2

Quasi-two-dimensional (2D) organic-inorganic hybrid perovskite is a re-emerging material with strongly excitonic absorption and emission properties that are attractive for photonics and optoelectronics. Here we report the experimental observation of excitonic energy transfer (ET) in van der Waals heterostructures consisting of quasi-2D hybrid perovskite (C₆H₅C₂H₄NH₃)₂PbI₄ (PEPI) and monolayer WS₂. Photoluminescence excitation spectroscopy reveals a distinct ground exciton resonance feature of perovskite, evidencing ET from perovskite to WS₂. We find unexpectedly high photoluminescence enhancement factors of up to ∼8, which cannot be explained by single-interface ET. Our analysis reveals that interlayer ET across the bulk of the layered perovskite also contributes to the large enhancement factor. Further, from the weak temperature dependence of the lower-limit ET rate, which we found to be ∼3 ns^-1, we conclude that the Förster-type mechanism is responsible.

Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel

Very recently, stacked two-dimensional materials have been studied, focusing on the van der Waals interaction at their stack junction interface. Here, we report field effect transistors (FETs) with stacked transition metal dichalcogenide (TMD) channels, where the heterojunction interface between two TMDs appears useful for nonvolatile or neuromorphic memory FETs. A few nanometer-thin WSe₂ and MoTe₂ flakes are vertically stacked on the gate dielectric, and bottom p-MoTe₂ performs as a channel for hole transport. Interestingly, the WSe₂/MoTe₂ stack interface functions as a hole trapping site where traps behave in a nonvolatile manner, although trapping/detrapping can be controlled by gate voltage (V_GS). Memory retention after high V_GS pulse appears longer than 10000 s, and the Program/Erase ratio in a drain current is higher than 200. Moreover, the traps are delicately controllable even with small V_GS, which indicates that a neuromorphic memory is also possible with our heterojunction stack FETs. Our stack channel FET demonstrates neuromorphic memory behavior of ∼94% recognition accuracy.

Temperature-dependent optical constants of monolayer [Formula: see text], [Formula: see text], [Formula: see text], and [Formula: see text]: spectroscopic ellipsometry and first-principles calculations

The temperature-dependent ([Formula: see text]) optical constants of monolayer [Formula: see text], [Formula: see text], [Formula: see text], and [Formula: see text] were investigated through spectroscopic ellipsometry over the spectral range of 0.73-6.42 eV. At room temperature, the spectra of refractive index exhibited several anomalous dispersion features below 800 nm and approached a constant value of 3.5-4.0 in the near-infrared frequency range. With a decrease in temperature, the refractive indices decreased monotonically in the near-infrared region due to the temperature-dependent optical band gap. The thermo-optic coefficients at room temperature had values from [Formula: see text] to [Formula: see text] for monolayer transition metal dichalcogenides at a wavelength of 1200 nm below the optical band gap. The optical band gap increased with a decrease in temperature due to the suppression of electron-phonon interactions. On the basis of first-principles calculations, the observed optical excitations at 4.5 K were appropriately assigned. These results provide basic information for the technological development of monolayer transition metal dichalcogenides-based photonic devices at various temperatures.

Highly conductive nanometer-thick gold films grown on molybdenum disulfide surfaces for interconnect applications

Thin gold (Au) films (10 nm) are deposited on different substrates by using a e-beam deposition system. Compared with sapphire and SiO₂ surfaces, longer migration length of the Au adatoms is observed on MoS₂ surfaces, which helps in the formation of a single-crystal Au film on the MoS₂ surface at 200 °C. The results have demonstrated that with the assistance of van der Waals epitaxy growth mode, single-crystal 3D metals can be grown on 2D material surfaces. With the improved crystalline quality and less significant Au grain coalescence on MoS₂ surfaces, sheet resistance 2.9 Ω/sq is obtained for the thin 10 nm Au film at 100 °C, which is the lowest value reported in literature. The highly conductive thin metal film is advantageous for the application of backend interconnects for the electronic devices with reduced line widths.

WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times

Vertical heterostructures of transition-metal dichalcogenide semiconductors have attracted considerable attention and offer new opportunities in electronics and optoelectronics for the development of innovative and multifunctional devices. Here, we designed a novel and compact vertically stacked two-dimensional (2D) n-WS₂/p-GeSe/n-WS₂ van der Waals (vdW) heterojunction bipolar transistor (2D-HBT)-based chemical sensor. The performance of the 2D-HBT vdW heterostructure with different base thicknesses is investigated by two configurations, namely, common-emitter and common-base configurations. The 2D-HBT vdW heterostructure exhibited intriguing electrical characteristics of current amplification with large gains of α ≈ 1.11 and β ≈ 20.7. In addition, 2D-HBT-based devices have been investigated as chemical sensors for the detection of NH₃ and O₂ gases at room temperature. The effects of different environments, such as air, vacuum, O₂, and NH₃, were also analyzed in dark conditions, and with a light of 633 nm wavelength, ultrahigh sensitivity and fast response and recovery times (6.55 and 16.2 ms, respectively) were observed. These unprecedented outcomes have huge potential in modern technology in the development of low-power amplifiers and gas sensors.

Efficient hot-electron extraction in two-dimensional semiconductor heterostructures by ultrafast resonant transfer

Energy loss from hot-carrier cooling sets the thermodynamic limit for the photon-to-power conversion efficiency in optoelectronic applications. Efficient hot-electron extraction before cooling could reduce the energy loss and leads to efficient next generation devices, which, unfortunately, is challenging to achieve in conventional semiconductors. In this work, we explore hot-electron transfer in two-dimensional (2D) layered semiconductor heterostructures, which have shown great potential for exploring new physics and optoelectronic applications. Using broadband micro-area ultrafast spectroscopy, we firmly established a type I band alignment in the WS₂-MoTe₂ heterostructure and ultrafast (∼60 fs) hot-electron transfer from photoexcited MoTe₂ to WS₂. The hot-electron transfer efficiency increases with excitation energy or excess energy as a result of a more favorable continuous competition between resonant electron transfer and cooling, reaching 90% for hot electrons with 0.3 eV excess energy. This study reveals exciting opportunities of designing extremely thin absorber and hot-carrier devices using 2D semiconductors and also sheds important light on the photoinduced interfacial process including charge transfer and generation in 2D heterostructures and optoelectronic devices.

Hybrid exciton-plasmon-polaritons in van der Waals semiconductor gratings

Van der Waals materials and heterostructures that manifest strongly bound exciton states at room temperature also exhibit emergent physical phenomena and are of great promise for optoelectronic applications. Here, we demonstrate that nanostructured, multilayer transition metal dichalcogenides (TMDCs) by themselves provide an ideal platform for excitation and control of excitonic modes, paving the way to exciton-photonics. Hence, we show that by patterning the TMDCs into nanoresonators, strong dispersion and avoided crossing of exciton, cavity photons and plasmon polaritons with effective separation energy exceeding 410 meV can be controlled with great precision. We further observe that inherently strong TMDC exciton absorption resonances may be completely suppressed due to excitation of hybrid light-matter states and their interference. Our work paves the way to the next generation of integrated exciton optoelectronic nano-devices and applications in light generation, computing, and sensing.

The authors investigate the optical properties of a heterostructure formed by a metallic substrate and a nanostructured transition metal dichalcogenide multilayer by measuring the reflectance spectrum at different multilayer thicknesses, filling factors and grating periods. The spectra show strong dispersion and avoided crossing of excitons, plasmons and cavity photons along with excitonic mode suppression at the anti-crossing point.

Quasi-BIC Resonant Enhancement of Second-Harmonic Generation in WS2 Monolayers

Atomically thin monolayers of transition metal dichalcogenides (TMDs) have emerged as a promising class of novel materials for optoelectronics and nonlinear optics. However, the intrinsic nonlinearity of TMD monolayers is weak, limiting their functionalities for nonlinear optical processes such as frequency conversion. Here we boost the effective nonlinear susceptibility of a TMD monolayer by integrating it with a resonant dielectric metasurface that supports pronounced optical resonances with high quality factors: bound states in the continuum (BICs). We demonstrate that a WS₂ monolayer combined with a silicon metasurface hosting BICs exhibits enhanced second-harmonic intensity by more than 3 orders of magnitude relative to a WS₂ monolayer on top of a flat silicon film of the same thickness. Our work suggests a pathway to employ high-index dielectric metasurfaces as hybrid structures for enhancement of TMD nonlinearities with applications in nonlinear microscopy, optoelectronics, and signal processing.

Layer-Dependent Electronic Structure Changes in Transition Metal Dichalcogenides: The Microscopic Origin

We have examined the electronic structure evolution in transition metal dichalcogenides MX₂ where M = Mo, W and X = S, Se, and Te. These are generally referred to as van der Waals materials on the one hand, yet one has band gap changes as large as 0.6 eV with thickness in some instances. This does not seem to be consistent with a description where the dominant interactions are van der Waals interactions. Mapping onto a tight binding model allows us to quantify the electronic structure changes, which are found to be dictated solely by interlayer hopping interactions. Different environments that an atom encounters could change the Madelung potential and therefore the onsite energies. This could happen while going from the monolayer to the bilayer as well as in cases where the stackings are different from what is found in 2H structures. These effects are quantitatively found to be negligible, enabling us to quantify the thickness-dependent electronic structure changes as arising from interlayer interactions alone.

Reconstructing Local Profile of Exciton-Emission Wavelengths across a WS2 Bubble beyond the Diffraction Limit

Air bubbles formed between layers of two-dimensional (2D) materials not only are unavoidable but also emerge as an important means of engineering their excitonic emission properties, especially as controllable quantum light sources. Measuring the actual spatially resolved optical properties across such bubbles is important for understanding excitonic physics and for device applications; however, such a measurement is challenging due to nanoscale features involved which require spatial resolution beyond the diffraction limit. Additional complexity is the involvement of multiple physical effects such as mechanical strain and dielectric environment that are difficult to disentangle. In this paper, we demonstrate an effective approach combining micro-photoluminescence measurement, atomic force microscope profile mapping, and a theoretical strain model. We succeeded in reconstructing the actual spatial profiles of the emission wavelengths beyond the diffraction limit for bubbles formed by a monolayer tungsten disulfide on boron nitride. The agreements and consistency among various approaches established the validity of our approach. In addition, our approach allows us to disentangle the effects of strain and dielectric environment and provides a general and reliable method to determine the true magnitude of wavelength changes due to the individual effects across bubbles. Importantly, we found that micro-optical measurement underestimates the red and blue shifts by almost 5 times. Our results provide important insights into strain and screening-dependent optical properties of 2D materials on the nanometer scale and contribute significantly to our understanding of excitonic emission physics as well as potential applications of bubbles in optoelectronic devices.

Modulation of oligonucleotide-binding dynamics on WS2 nanosheet interfaces for detection of Alzheimer's disease biomarkers

Non-covalent adsorption and desorption of oligonucleotides on two-dimensional nanosheets are widely employed to design nanobiosensors for the rapid optical detection of targets. A precise control over the weak interactions between nanosheet interfaces and oligonucleotides is crucial for a high-sensing performance. Herein, the interface of ultrathin WS₂ nanosheets used as a fluorescence quencher was engineered by four different dextran polymers in an aqueous solution to control the adsorption kinetics and thermodynamics of the DNA probe. The WS₂ nanosheets, functionalized by the carboxyl group-bearing dextran (CM-dex-WS₂) or the trimethylammonium-modified dextran (TMA-dex-WS₂), exhibited 3.6-fold faster adsorption rates of the fluorescein-labeled DNA probe (FAM-DNA), which led to the effective fluorescence quenching of FAM, compared to the nanosheets functionalized with pristine dextran (dex-WS₂) or the hydrophobic phenoxy groups-bearing dextran (PhO-dex-WS₂). Isothermal titration calorimetry measurements showed that the adsorption strength of FAM-DNA for CM-dex-WS₂ was one order of magnitude greater than its hybridization energy for a target microRNA (miR-29a) that is well-known as an Alzheimer's disease (AD) biomarker, leading to the unfavorable desorption of the DNA probe from the surface. In contrast, TMA-dex-WS₂ exhibited the proper adsorption strength of FAM-DNA, which was lower than its hybridization energy for miR-29a, leading to its favorable desorption from the nanosheet surface along with the noticeable restoration of the quenched fluorescence after its hybridization with miR-29a. Finally, the interface modulation of WS₂ nanosheets allowed the selective and sensitive recognition of miR-29a against non-complementary RNA and single base-mismatched RNA in human serum via increases in target-specific fluorescence.

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.

Measurement of Quantum Yields of Monolayer TMDs Using Dye-Dispersed PMMA Thin Films

In general, the quantum yields (QYs) of monolayer transition metal dichalcogenides (1L-TMDs) are low, typically less than 1% in their pristine state, significantly limiting their photonic applications. Many methods have been reported to increase the QYs of 1L-TMDs; however, the technical difficulties involved in the reliable estimation of these QYs have prevented the general assessment of these methods. Herein, we demonstrate the estimation of the QYs of 1L-TMDs using a poly methyl methacrylate (PMMA) thin film embedded with rhodamine 6G (R6G) as a reference specimen for measuring the QYs of 1L-TMDs. The PMMA/R6G composite films with thicknesses of 80 and 300 nm demonstrated spatially homogeneous emissions with the incorporation of well-dispersed R6G molecules, and may, therefore, be used as ideal reference specimens for the QY measurement of 1L-TMDs. Using our reference specimens, for which the QY ranged from 5.4% to 22.2% depending on the film thickness and R6G concentrations, we measured the QYs of the exfoliated or chemical vapor deposition (CVD)-grown 1L-WS₂, -MoSe₂, -MoS₂, and -WSe₂ TMDs. The convenient procedure proposed in this study for preparing the thin reference films and the simple protocol for the QY estimation of 1L-TMDs may enable accurate comparisons of the absolute QYs between the 1L-TMD samples, thereby enabling the development of a method to improve the QY of 1L-TMDs.

Band Nesting Bypass in WS2 Monolayers via Förster Resonance Energy Transfer

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) have attracted intensive interest due to the direct-band-gap transition in the monolayer form, positioning them as potential next-generation materials for optoelectronic or photonic devices. However, the band-nested suppression of the recombination efficiency at higher excitation energies limits the ability to locally control and manipulate the photoluminescence of WS₂ for multifunctional applications. In this work, we exploit an energy transfer method to modulate the fluorescence properties of TMDs under a larger excitation range spanning from UV to visible light. Self-assembled lanthanide (Ln)/TMD hybrids have been designed based on a low-cost and highly efficient solution-processed approach. The emission energy from Ln³⁺ sources can be effectively transferred to the TMD monolayers under low power exposure (0.13 mW) at room temperature, activating the characteristic monolayer fluorescence in place of Ln³⁺ emission signatures. The Ln/TMDs photonics can potentially tune the excitation of TMDs to provide variable yet controllable emissions. This provides a solution to the suppression of direct exciton recombination in monolayer TMDs at the band nesting resonant energy region. Our work on such Ln/TMD systems would overcome the limited excitation energy range in TMDs and extend their functionalities for optoelectronic or photonic applications.

Ultrafast Exciton Dynamics in Scalable Monolayer MoS2 Synthesized by Metal Sulfurization

Excitons in monolayer transition metal dichalcogenides (TMDs) have exceptionally large binding energies and dominate the optical properties of materials. Exploring the relaxation behavior of excitons is crucial for understanding the fundamental physics as well as the performance of TMD-based optoelectronic devices. However, ultrafast carrier dynamics is sensitive to the structural defects and surface conditions of TMDs, depending on the growth or transfer process. Here, we utilized pump-probe transient absorption (TA) spectroscopy with a white-light probe to investigate the dynamics of excitons in monolayer MoS₂ synthesized by the metal sulfurization method. The sulfurization method was used for the fabrication of large-scale, continuous, and uniform thin films with a controllable number of layers. The excitation dynamics of the wafer-size monolayer MoS₂ is found to be comparable to that of monolayer MoS₂ flakes grown by chemical vapor deposition (CVD). The dominant processes of carrier relaxation in the monolayer MoS₂ are exciton-exciton annihilation (hundreds of femtoseconds), the trapping of the excitons by surface states (a few picoseconds), and interband carrier-phonon scattering (tens of picoseconds). Moreover, the induced absorption due to mid-gap defects, which is often observed for samples fabricated by growth methods, such as CVD, is not observed for our continuous and uniform monolayer films. Understanding the charge carrier dynamics of the exciton in the scalable and uniform monolayer MoS₂ can provide physical insights that are valuable in the design and development of complex 2D devices.

Wavelength-Tunable Interlayer Exciton Emission at the Near-Infrared Region in van der Waals Semiconductor Heterostructures

The wavelength-tunable interlayer exciton (IE) from layered semiconductor materials has not been achieved. van der Waals heterobilayers constructed using single-layer transition metal dichalcogenides can produce continuously changed interlayer band gaps, which is a feasible approach to achieve tunable IEs. In this work, we design a series of van der Waals heterostructures composed of a WSe₂ layer with a fixed band gap and another WS_2(1-x)Se_2x alloy layer with continuously changed band gaps. The existence of IEs and tunable interlayer band gaps in these heterobilayers is verified by steady-state photoluminescence experiments. By tuning the composition of the WS_2(1-x)Se_2x alloy layers, we realized a very wide tunable band gap range of 1.97-1.40 eV with a wavelength-tunable IE emission range of 1.52-1.40 eV from the heterobilayers. The time-resolved photoluminescence experiments show the IE emission lifetimes over nanoseconds.

P-type laser-doped WSe2/MoTe2 van der Waals heterostructure photodetector

Van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials are being studied extensively for their prospective applications in photodetectors. As the pristine WSe₂/MoTe₂ heterostructure is a type I (straddling gap) structure, it cannot be used as a photovoltaic device theoretically, although both WSe₂ and MoTe₂ have excellent photoelectric properties. The Fermi level of p-doped WSe₂ is close to its valence band. The p-doped WSe₂/MoTe₂ heterostructure can perform as a photovoltaic device because a built-in electric field appears at the interface between MoTe₂ and p-doped WSe₂. Here, a 633 nm laser was used for scanning the surface of WSe₂ in order to obtain the p-doped WSe₂. x-ray photoelectron spectroscopy (XPS) and electrical measurements verified that p-type doping in WSe₂ is produced through laser treatment. The p-type doping in WSe₂ includes substoichiometric WO_x and nonstoichiometric WSe_x. A photovoltaic device using p-doped WSe₂ and MoTe₂ was successfully fabricated. The band structure, light-matter reactions, and carrier-transport in the p-doped WSe₂/MoTe₂ heterojunction were analyzed. The results showed that this photodetector has an on/off ratio of ≈10⁴, dark current of ≈1 pA, and response time of 72 μs under the illumination of 633 nm laser at zero bias (V _ds = 0 V). The proposed p-doping method may provide a new approach to improve the performance of nanoscale optoelectronic devices.

Curved 2D WS2 nanostructures: nanocasting and silent phonon mode

Layered two-dimensional (2D) materials and their heterostructures possess excellent optoelectronic properties due to their unique planar features. However, planar structures can only selectively support the fundamental optical modes, which is averse to fully exploit the potential of the 2D materials. Here, a novel type of tungsten disulfide (WS2) nanoparticle (NP) with a uniform size and morphology and highly ordered WS2 supercrystals (SCs) are synthesized by a nanocasting process using ordered mesoporous silica as a template. Due to the curved feature of individual nanostructures, their Raman signals show complex dependence behavior on the excitation wavelength, excitation power and temperature. Significantly, the silent phonon mode becomes Raman active due to the curvature of the interlaced WS2 layers. We believe that curved features will greatly enrich the optoelectronic applications of 2D materials.

Disentangling oxygen and water vapor effects on optoelectronic properties of monolayer tungsten disulfide

By understanding how the environmental composition impacts the optoelectronic properties of transition metal dichalcogenide monolayers, we demonstrate that simple photoluminescence (PL) measurements of tungsten disulfide (WS₂) monolayers can differentiate relative humidity environments. In this paper, we examine the PL and photoconductivity of chemical vapor deposition grown WS₂ monolayers under three carefully controlled environments: inert gas (N₂), dry air (O₂ in N₂), and humid nitrogen (H₂O vapor in N₂). The WS₂ PL is measured as a function of 532 nm laser power and exposure time and can be decomposed into the exciton, trion, and lower energy state(s) contributions. Under continuous illumination in either O₂ or H₂O vapor environment, we find dramatic (and reversible) increases in PL intensity relative to the PL in an inert environment. The PL bathochromically shifts in an O₂ environment and is dominated by increased trion emission and diminished exciton emission. In contrast, the WS₂ PL increase in a H₂O environment results from an overall increase in emission from all spectral components where the exciton contribution dominates. The drastic increases in PL are anticorrelated with corresponding decreases in photoconductivity, as measured by time-resolved microwave conductivity. The results suggest that both O₂ and H₂O react photochemically with the WS₂ monolayer surface, modifying the optoelectronic properties, but do so via distinct pathways. Thus, we use these optoelectronic differences to differentiate the amount of humidity in the air, which we show with 0%, 40%, and 80% relative humidity environments. This deeper understanding of how ambient conditions impact WS₂ monolayers enables novel humidity sensors as well as a better understanding of the correlation between TMDC surface chemistry, light emission, and photoconductivity. Moreover, these WS₂ measurements highlight the importance of considering the impact of the local environment on reported results.

Study on the Growth Parameters and the Electrical and Optical Behaviors of 2D Tungsten Disulfide

Transition-metal dichalcogenides (TMDCs) with atomic thickness are promising materials for next-generation electronic and optoelectronic devices. Herein, we report uniform growth of triangular-shaped (∼40 μm) monolayer WS₂ using the atmospheric-pressure chemical vapor deposition (APCVD) technique in a hydrogen-free environment. We have studied the optical and electrical behaviors of as-grown WS₂ samples. The absorption spectrum of monolayer WS₂ shows two intense excitonic absorption peaks, namely, A (∼630 nm) and B (∼530 nm), due to the direct gap transitions at the K point. Photoluminescence (PL) and fluorescence studies reveal that under the exposure of green light, monolayer WS₂ gives very strong red emission at ∼663 nm. This corresponds to the direct band gap and strong excitonic effect in monolayer WS₂. Furthermore, the efficacy of the synthesized WS₂ crystals for electronic devices is also checked by fabricating field-effect transistors (FETs). FET devices exhibit an electron mobility of μ ∼ 6 cm² V^-1 s^-1, current ON/OFF ratio of ∼10⁶, and subthreshold swing (SS) of ∼641 mV decade^-1, which are comparable to those of the exfoliated monolayer WS₂ FETs. These findings suggest that our APCVD-grown WS₂ has the potential to be used for next-generation nanoelectronic and optoelectronic applications.

Mechanism of Extreme Optical Nonlinearities in Spiral WS2 above the Bandgap

Layered two-dimensional transition-metal dichalcogenides (2D-TMDs) are promising building blocks for ultracompact optoelectronic applications. Recently, a strong second harmonic generation (SHG) was observed in spiral stacked TMD nanostructures which was explained by its low crystal symmetry. However, the relationship between the efficiency of SHG signals and the electronic band structure remains unclear. Here, we show that the SHG signal in spiral WS₂ nanostructures is strongly enhanced (∼100 fold increase) not only when the second harmonic signal is in resonance with the exciton states but also when the excitation energy is slightly above the electronic band gap, which we attribute to a large interband Berry connection associated with certain optical transitions in spiral WS₂. The giant SHG enhancement observed and explained in this study could promote the understanding and utility of TMDs as highly efficient nonlinear optical materials and potentially lead to a new pathway to fabricate more efficient optical energy conversion devices.

Wide Band Gap Chalcogenide Semiconductors

Wide band gap semiconductors are essential for today's electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., γ-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out because of their propensity for p-type doping, high mobilities, high valence band positions (i.e., low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent semiconductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E_G > 2 eV) chalcogenide materials-namely, II-VI MCh binaries, CuMCh₂ chalcopyrites, Cu₃MCh₄ sulvanites, mixed-anion layered CuMCh(O,F), and 2D materials-and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications-for example, photovoltaic and photoelectrochemical solar cells, transistors, and light emitting diodes-that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this Review aims to inspire continued research on this emerging class of transparent semiconductors and thereby enable future innovations for optoelectronic devices.

Two-Dimensional to Three-Dimensional Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic, and Compact Morphologies

We investigate the role of growth temperature and metal/chalcogen flux in atmospheric pressure chemical vapor deposition growth of MoSe₂ and WSe₂ on Si/SiO₂ substrates. Using scanning electron microscopy and atomic force microscopy, we observe that the growth temperature and transition metal flux strongly influence the domain morphology, and the compact triangular or hexagonal domains ramify into branched structures as the growth temperature (metal flux) is decreased (increased). The competition between adatom attachment to the domain edges and diffusion of adatoms along the domain boundary determines the evolution of the observed growth morphology. Depending on the growth temperature and flux, two different branched structures-fractals and dendrites-grow. The fractals (with a dimension of ∼1.67) obey a diffusion-limited aggregation mechanism, whereas the dendrites with a higher fractal dimension of ∼1.80 exhibit preferential growth along the symmetry-governed directions. The effect of chalcogen environment is studied, where a Se-rich condition helps restrict Mo-rich nucleus formation, promoting lateral growth. For a Se-deficient environment, several multilayer islands cluster on two-dimensional domains, suggesting a transition from lateral to vertical growth because of insufficient Se passivation. X-ray photoelectron spectroscopy analysis shows a near perfect stoichiometry (Mo/Se = 1:1.98) of MoSe₂ grown in a Se-rich environment, whereas in the Se-deficient condition, a ratio of Mo/Se = 1:1.68 is observed. This also supports the formation of metal-rich nuclei (Mo_1+xSe_2-x) under Se-deficient conditions, leading to three-dimensional clustering. Tuning the growth temperature and metal/chalcogen flux, we propose an optimized CVD growth window for synthesizing large-area Mo(W) selenide.

Realizing an Omega-Shaped Gate MoS2 Field-Effect Transistor Based on a SiO2/MoS2 Core-Shell Heterostructure

Substantial progress has been made in the experimental synthesis of large-area two-dimensional transition metal dichalcogenide (TMD) thin films in recent years. This has provided a solid basis to build non-planar structures to implement the unique electrical and mechanical properties of TMDs in various nanoelectronic and mechano-electric devices, which, however, has not yet been fully explored. In this work, we demonstrate the fabrication and characterization of MoS₂ field-effect transistors (FETs) with an omega (Ω)-shaped gate. The FET is built based on the SiO₂/MoS₂ core-shell heterostructure integrated using atomic layer deposition (ALD) technique. The MoS₂ thin film has been uniformly deposited by ALD as wrapping the SiO₂ nanowire forming the channel region, which is further surrounded by the gate dielectric and the Ω-gate. The device has exhibited n-type behavior with effective switching comparable to the reference device with a planar MoS₂ channel built on a SiO₂/Si substrate. Our work opens up an attractive avenue to realize novel device structures utilizing synthetic TMDs, thereby broadening their potential application in future advanced nanoelectronics.

Modulating the Optical Band Gap of Small Semiconducting Two-Dimensional Materials by Conjugated Polymers

Ultra-high-resolution optical microscopic techniques are used to measure the reflectance and photoluminescence (PL) spectrum of individual monolayered MoS₂ of dimensions below 200 × 200 nm, while placed on top of a thin film conjugated polymer (CP). p-type and n-type CPs such as poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM), respectively, modified the optical band gap of the MoS₂ sheet differently. However, the optical band gap is decreased after integration with P3HT, while it is increased after being combined with PCBM. The acceptable reason for the modification of the band gap of MoS₂ by CPs is the generation of interlayer excitons (ILE) at their interface. The optical band gap of MoS₂ is further changed by introducing an inert polymer spacer of different thickness to separate MoS₂ from the CP. This is attributed to the reduction of the efficiency of excitonic interactions and lowering the exciton binding energy, which is induced by the increase of the dielectric function at the CP-MoS₂ interface. No sign of electron injection to the conduction band of MoS₂ after integration with P3HT or PCBM, as no significant shift of the A₁^' Raman band of MoS₂ was measured on top of CPs, which is sensitive to the electron injection.

Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy

Although large-scale synthesis of layered two-dimensional (2D) transition metal dichalcogenides (TMDCs) has been made possible, mechanical exfoliation of layered van der Waals crystal is still indispensable as every new material research starts with exfoliated flakes. However, it is often a tedious task to find the flakes with desired thickness and sizes. We propose a method to determine the thickness of few-layer flakes and facilitate the fast searching of flakes with a specific thickness. By using hyperspectral wild field microscopy to acquire differential reflectance and transmittance spectra, we demonstrate unambiguous recognition of typical TMDCs and their thicknesses based on their excitonic resonance features in a single step. Distinct from Raman spectroscopy or atomic force microscopy, our method is non-destructive to the sample. By knowing the contrast between different layers, we developed an algorithm to automatically search for flakes of desired thickness in situ. We extended this method to measure tin dichalcogenides, such as SnS₂ and SnSe₂, which are indirect bandgap semiconductors regardless of the thickness. We observed distinct spectroscopic behaviors as compared with typical TMDCs. Layer-dependent excitonic features were manifested. Our method is ideal for automatic non-destructive optical inspection in mass production in the semiconductor industry.

Design of van der Waals interfaces for broad-spectrum optoelectronics

Van der Waals (vdW) interfaces based on 2D materials are promising for optoelectronics, as interlayer transitions between different compounds allow tailoring of the spectral response over a broad range. However, issues such as lattice mismatch or a small misalignment of the constituent layers can drastically suppress electron-photon coupling for these interlayer transitions. Here, we engineered type-II interfaces by assembling atomically thin crystals that have the bottom of the conduction band and the top of the valence band at the Γ point, and thus avoid any momentum mismatch. We found that these van der Waals interfaces exhibit radiative optical transitions irrespective of the lattice constant, the rotational and/or translational alignment of the two layers or whether the constituent materials are direct or indirect gap semiconductors. Being robust and of general validity, our results broaden the scope of future optoelectronics device applications based on two-dimensional materials.

Probing Exciton Dispersions of Freestanding Monolayer WSe_{2} by Momentum-Resolved Electron Energy-Loss Spectroscopy

Excitons, as bound electron-hole paired quasiparticle, play an essential role in the energy transport in the optical-electric properties of semiconductors. Their momentum-energy dispersion relation is a fundamental physical property of great significance to understand exciton dynamics. However, this dispersion is seldom explored especially in two-dimensional transition metal dichalcogenides with rich valleytronic properties. In this work, momentum resolved electron energy-loss spectroscopy was used to measure the dispersions of excitons in freestanding monolayer WSe_{2}. Besides the parabolically dispersed valley excitons, a subgap dispersive exciton was observed at nonzero momenta for the first time, which can be introduced by the prolific Se vacancies. Our work provides a paradigm to directly probe exciton dispersions in 2D semiconductors and could be generalized to many low-dimensional systems.

Ultrathin Pd-based nanosheets: syntheses, properties and applications

Two-dimensional (2D) noble metal-based nanosheets (NSs) have received considerable interest in recent years due to their unique properties and widespread applications. Pd-based NSs, as a typical member of 2D noble metal-based NSs, have been most extensively studied. In this review, we first summarize the research progress on the synthesis of Pd-based NSs, including pure Pd NSs, Pd-based alloy NSs, Pd-based core-shell NSs and Pd-based hybrid NSs. The synthetic strategy and growth mechanism are systematically discussed. Then their properties and applications in catalysis, biotherapy, gas sensing and so on are introduced in detail. Finally, the challenges and opportunities towards the rational design and controlled synthesis of Pd-based NSs are proposed.

Solution-Based Synthesis of Few-Layer WS2 Large Area Continuous Films for Electronic Applications

Unlike MoS2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS2 films using this approach has been more challenging. Here, we report a method for growth of few-layer WS2 that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH4)2WS4) films by two-step high temperature annealing without additional sulphurization. This facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS2 films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS2 films are highly crystalline and stoichiometric. Finally, WS2 films as-deposited on SiO2/Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.

Controlling Defects in Continuous 2D GaS Films for High-Performance Wavelength-Tunable UV-Discriminating Photodetectors

A chemical vapor deposition method is developed for thickness-controlled (one to four layers), uniform, and continuous films of both defective gallium(II) sulfide (GaS): GaS_0.87 and stoichiometric GaS. The unique degradation mechanism of GaS_0.87 with X-ray photoelectron spectroscopy and annular dark-field scanning transmission electron microscopy is studied, and it is found that the poor stability and weak optical signal from GaS are strongly related to photo-induced oxidation at defects. An enhanced stability of the stoichiometric GaS is demonstrated under laser and strong UV light, and by controlling defects in GaS, the photoresponse range can be changed from vis-to-UV to UV-discriminating. The stoichiometric GaS is suitable for large-scale, UV-sensitive, high-performance photodetector arrays for information encoding under large vis-light noise, with short response time (<66 ms), excellent UV photoresponsivity (4.7 A W^-1 for trilayer GaS), and 26-times increase of signal-to-noise ratio compared with small-bandgap 2D semiconductors. By comprehensive characterizations from atomic-scale structures to large-scale device performances in 2D semiconductors, the study provides insights into the role of defects, the importance of neglected material-quality control, and how to enhance device performance, and both layer-controlled defective GaS_0.87 and stoichiometric GaS prove to be promising platforms for study of novel phenomena and new applications.

Continuous Wave Sum Frequency Generation and Imaging of Monolayer and Heterobilayer Two-Dimensional Semiconductors

We report continuous-wave second harmonic and sum frequency generation from two-dimensional transition metal dichalcogenide monolayers and their heterostructures with pump irradiances several orders of magnitude lower than those of conventional pulsed experiments. The high nonlinear efficiency originates from above-gap excitons in the band nesting regions, as revealed by wavelength-dependent second order optical susceptibilities quantified in four common monolayer transition metal dichalcogenides. Using sum frequency excitation spectroscopy and imaging, we identify and distinguish one- and two-photon resonances in both monolayers and heterobilayers. Data for heterostructures reveal responses from constituent layers accompanied by nonlinear signal correlated with interlayer transitions. We demonstrate spatial mapping of heterogeneous interlayer coupling by sum frequency and second harmonic confocal microscopy on heterobilayer MoSe₂/WSe₂.

Synthesis and Characterization of Highly Crystalline Vertically Aligned WSe2 Nanosheets

Here, we report on the synthesis of tungsten diselenide (WSe2) nanosheets using an atmospheric pressure chemical vapor deposition technique via the rapid selenization of thin tungsten films. The morphology and the structure, as well as the optical properties, of the so-produced material have been studied using electron microscopies, X-ray photoelectron spectroscopy, photoluminescence, UV–visible and Raman spectroscopies, and X-ray diffraction. These studies confirmed the high crystallinity, quality, purity, and orientation of the WSe2 nanosheets, in addition to the unexpected presence of mixed phases, instead of only the most thermodynamically stable 2H phase. The synthesized material might be useful for applications such as gas sensing or for hydrogen evolution reaction catalysis.

Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe_{2} Films

Platinum ditelluride (PtTe_{2}), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two triatomic layers (TLs) with a negative gap of -0.36  eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79  eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.

High throughput study on magnetic ground states with Hubbard U corrections in transition metal dihalide monolayers

We present a high throughput study of the magnetic ground states for 90 transition metal dihalide monolayers TMX₂ using density functional theory based on a collection of Hubbard U values. Stable geometrical phases between 2H and 1T are first determined. Spin-polarized calculations show that 50 out of 55 magnetic TMX₂ monolayers are energetically prone to the 1T phase. Further, the magnetic ground states are determined by considering four local spin models with respect to different U values. Interestingly, 23 out of 55 TMX₂ monolayers exhibit robust magnetic ground orderings which will not be changed by the U values. Among them, NiCl₂ with a magnetic moment of 2 μ _B is a ferromagnetic (FM) insulator, while the VX₂, MnX₂ (X = Cl, Br and I), PtCl₂ and CoI₂ monolayers have noncollinear antiferromagnetic (120°-AFM) ground states with a tiny in-plane magnetic anisotropic energy, indicating flexible magnetic orientation rotation. The exchange parameters for both robust FM and 120°-AFM systems are analyzed in detail with the Heisenberg model. Our high-throughput calculations give a systematic study of the electronic and magnetic properties of TMX₂ monolayers, and these two-dimensional materials with versatile magnetic behavior may have great potential for spintronic applications.

Measuring Photoexcited Free Charge Carriers in Mono- to Few-Layer Transition-Metal Dichalcogenides with Steady-State Microwave Conductivity

Photoinduced generation of mobile charge carriers is the fundamental process underlying many applications, such as solar energy harvesting, solar fuel production, and efficient photodetectors. Monolayer transition-metal dichalcogenides (TMDCs) are an attractive model system for studying photoinduced carrier generation mechanisms in low-dimensional materials because they possess strong direct band gap absorption, large exciton binding energies, and are only a few atoms thick. While a number of studies have observed charge generation in neat TMDCs for photoexcitation at, above, or even below the optical band gap, the role of nonlinear processes (resulting from high photon fluences), defect states, excess charges, and layer interactions remains unclear. In this study, we introduce steady-state microwave conductivity (SSMC) spectroscopy for measuring charge generation action spectra in a model WS₂ mono- to few-layer TMDC system at fluences that coincide with the terrestrial solar flux. Despite utilizing photon fluences well below those used in previous pump-probe measurements, the SSMC technique is sensitive enough to easily resolve the photoconductivity spectrum arising in mono- to few-layer WS₂. By correlating SSMC with other spectroscopy and microscopy experiments, we find that photoconductivity is observed predominantly for excitation wavelengths resonant with the excitonic transition of the multilayer portions of the sample, the density of which can be controlled by the synthesis conditions. These results highlight the potential of layer engineering as a route toward achieving high yields of photoinduced charge carriers in neat TMDCs, with implications for a broad range of optoelectronic applications.

Controlling Photoluminescence Enhancement and Energy Transfer in WS2 :hBN:WS2 Vertical Stacks by Precise Interlayer Distances

2D semiconducting transition metal dichalcogenides (TMDs) are endowed with fascinating optical properties especially in their monolayer limit. Insulating hBN films possessing customizable thickness can act as a separation barrier to dictate the interactions between TMDs. In this work, vertical layered heterostructures (VLHs) of WS₂ :hBN:WS₂ are fabricated utilizing chemical vapor deposition (CVD)-grown materials, and the optical performance is evaluated through photoluminescence (PL) spectroscopy. Apart from the prohibited indirect optical transition due to the insertion of hBN spacers, the variation in the doping level of WS₂ drives energy transfer to arise from the layer with lower quantum efficiency to the other layer with higher quantum efficiency, whereby the total PL yield of the heterosystem is increased and the stack exhibits a higher PL intensity compared to the sum of those in the two WS₂ constituents. Such doping effects originate from the interfaces that WS₂ monolayers reside on and interact with. The electron density in the WS₂ is also controlled and subsequent modulation of PL in the heterostructure is demonstrated by applying back-gated voltages. Other influential factors include the strain in WS₂ and temperature. Being able to tune the energy transfer in the VLHs may expand the development of photonic applications in 2D systems.

Tuning the electronic structure of RhX3 (X = Cl, Br, I) nonmagnetic monolayers: effects of charge-injection and external strain

The electronic and magnetic nature of novel semiconducting RhX₃ (X = Cl, Br, I) monolayer systems, which are dynamically and thermally stable, can be tuned by electrical and mechanical modifications.